ATE277424T1 - Schmelzstruktur für eine integrierte schaltungsanordnung - Google Patents
Schmelzstruktur für eine integrierte schaltungsanordnungInfo
- Publication number
- ATE277424T1 ATE277424T1 AT95120432T AT95120432T ATE277424T1 AT E277424 T1 ATE277424 T1 AT E277424T1 AT 95120432 T AT95120432 T AT 95120432T AT 95120432 T AT95120432 T AT 95120432T AT E277424 T1 ATE277424 T1 AT E277424T1
- Authority
- AT
- Austria
- Prior art keywords
- integrated circuit
- fuse element
- circuit elements
- semiconductor substrate
- conductive material
- Prior art date
Links
- 230000004927 fusion Effects 0.000 title 1
- 239000004020 conductor Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 239000003989 dielectric material Substances 0.000 abstract 2
- 239000010410 layer Substances 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 239000000155 melt Substances 0.000 abstract 2
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000011241 protective layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
- H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/055—Fuse
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Fuses (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US36567094A | 1994-12-29 | 1994-12-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE277424T1 true ATE277424T1 (de) | 2004-10-15 |
Family
ID=23439841
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT95120432T ATE277424T1 (de) | 1994-12-29 | 1995-12-22 | Schmelzstruktur für eine integrierte schaltungsanordnung |
Country Status (7)
Country | Link |
---|---|
US (2) | US5827759A (de) |
EP (1) | EP0720230B1 (de) |
JP (1) | JPH08255553A (de) |
KR (1) | KR100405027B1 (de) |
AT (1) | ATE277424T1 (de) |
DE (1) | DE69533537T2 (de) |
TW (1) | TW278229B (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5698895A (en) * | 1994-06-23 | 1997-12-16 | Cubic Memory, Inc. | Silicon segment programming method and apparatus |
EP0853341A2 (de) * | 1997-01-14 | 1998-07-15 | Nec Corporation | Halbleiteranordnung und Verfahren zu ihrer Herstellung |
JPH10229125A (ja) * | 1997-02-14 | 1998-08-25 | Nec Corp | 半導体装置 |
JPH11154706A (ja) * | 1997-11-20 | 1999-06-08 | Mitsubishi Electric Corp | 半導体装置 |
US6222244B1 (en) | 1998-06-08 | 2001-04-24 | International Business Machines Corporation | Electrically blowable fuse with reduced cross-sectional area |
US6524941B2 (en) * | 1998-06-08 | 2003-02-25 | International Business Machines Corporation | Sub-minimum wiring structure |
US6037648A (en) * | 1998-06-26 | 2000-03-14 | International Business Machines Corporation | Semiconductor structure including a conductive fuse and process for fabrication thereof |
US6008075A (en) * | 1999-02-11 | 1999-12-28 | Vanguard International Semiconductor Corporation | Method for simultaneous formation of contacts between metal layers and fuse windows in semiconductor manufacturing |
US20070190751A1 (en) * | 1999-03-29 | 2007-08-16 | Marr Kenneth W | Semiconductor fuses and methods for fabricating and programming the same |
US6650519B1 (en) | 1999-08-17 | 2003-11-18 | Seagate Technology Llc | ESD protection by a high-to-low resistance shunt |
US6344679B1 (en) | 1999-11-19 | 2002-02-05 | International Business Machines Corporation | Diode with alterable conductivity and method of making same |
KR100314133B1 (ko) | 1999-11-26 | 2001-11-15 | 윤종용 | 가장자리에 흡습방지막이 형성된 반도체 칩 및 이흡습방지막의 형성방법 |
US6489640B1 (en) | 2000-10-06 | 2002-12-03 | National Semiconductor Corporation | Integrated circuit with fuse element and contact pad |
US6774457B2 (en) * | 2001-09-13 | 2004-08-10 | Texas Instruments Incorporated | Rectangular contact used as a low voltage fuse element |
US6444503B1 (en) | 2002-02-07 | 2002-09-03 | Taiwan Semiconductor Manufacturing Company | Fabricating electrical metal fuses without additional masking |
US20040038458A1 (en) * | 2002-08-23 | 2004-02-26 | Marr Kenneth W. | Semiconductor fuses, semiconductor devices containing the same, and methods of making and using the same |
DE10346460A1 (de) | 2003-10-02 | 2005-05-19 | Infineon Technologies Ag | Anordnung und Verfahren zum Schutz von Fuses/Anti-Fuses |
US6946718B2 (en) * | 2004-01-05 | 2005-09-20 | Hewlett-Packard Development Company, L.P. | Integrated fuse for multilayered structure |
US7701035B2 (en) * | 2005-11-30 | 2010-04-20 | International Business Machines Corporation | Laser fuse structures for high power applications |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5847596Y2 (ja) * | 1979-09-05 | 1983-10-29 | 富士通株式会社 | 半導体装置 |
JPS5694661A (en) * | 1979-12-27 | 1981-07-31 | Fujitsu Ltd | Semiconductor device |
NL8002634A (nl) * | 1980-05-08 | 1981-12-01 | Philips Nv | Programmeerbare halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. |
JPS5856355A (ja) * | 1981-09-30 | 1983-04-04 | Hitachi Ltd | 半導体集積回路装置 |
US4810663A (en) * | 1981-12-07 | 1989-03-07 | Massachusetts Institute Of Technology | Method of forming conductive path by low power laser pulse |
JPS59104155A (ja) * | 1982-12-07 | 1984-06-15 | Seiko Epson Corp | 半導体ヒユ−ズ |
US4598462A (en) * | 1983-04-07 | 1986-07-08 | Rca Corporation | Method for making semiconductor device with integral fuse |
JPS60176250A (ja) * | 1984-02-23 | 1985-09-10 | Toshiba Corp | 半導体装置の製造方法 |
JPS6122650A (ja) * | 1984-07-11 | 1986-01-31 | Hitachi Ltd | 欠陥救済方法および装置 |
US4912066A (en) * | 1984-07-18 | 1990-03-27 | Texas Instruments Incorporated | Make-link programming of semiconductor devices using laser-enhanced thermal breakdown of insulator |
US4665295A (en) * | 1984-08-02 | 1987-05-12 | Texas Instruments Incorporated | Laser make-link programming of semiconductor devices |
US4751197A (en) * | 1984-07-18 | 1988-06-14 | Texas Instruments Incorporated | Make-link programming of semiconductor devices using laser enhanced thermal breakdown of insulator |
US4681778A (en) * | 1985-11-14 | 1987-07-21 | Optical Materials, Inc. | Method and apparatus for making electrical connections utilizing a dielectric-like metal film |
JPS6329953A (ja) * | 1986-07-24 | 1988-02-08 | Matsushita Electronics Corp | 半導体装置 |
JPS6344739A (ja) * | 1986-08-12 | 1988-02-25 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS63283060A (ja) * | 1987-05-14 | 1988-11-18 | Fujitsu Ltd | 絶縁分離型半導体装置およびその製造方法 |
US4875086A (en) * | 1987-05-22 | 1989-10-17 | Texas Instruments Incorporated | Silicon-on-insulator integrated circuits and method |
DE3728979A1 (de) * | 1987-08-29 | 1989-03-09 | Bosch Gmbh Robert | Planare schaltungsanordnung |
US5185291A (en) * | 1989-06-30 | 1993-02-09 | At&T Bell Laboratories | Method of making severable conductive path in an integrated-circuit device |
US5025300A (en) * | 1989-06-30 | 1991-06-18 | At&T Bell Laboratories | Integrated circuits having improved fusible links |
US5387555A (en) * | 1992-09-03 | 1995-02-07 | Harris Corporation | Bonded wafer processing with metal silicidation |
EP0464567B1 (de) * | 1990-06-25 | 1997-08-06 | Matsushita Electronics Corporation | Kaltkathodenelement |
DE69231858T2 (de) * | 1991-02-19 | 2002-03-28 | Texas Instruments Inc | Antischmelzsicherungsstruktur mit Seitenwand und Herstellungsverfahren |
US5241496A (en) * | 1991-08-19 | 1993-08-31 | Micron Technology, Inc. | Array of read-only memory cells, eacch of which has a one-time, voltage-programmable antifuse element constructed within a trench shared by a pair of cells |
US5392187A (en) * | 1992-08-12 | 1995-02-21 | North Carolina State University At Raleigh | Integrated circuit power device with transient responsive current limiting means |
US5282158A (en) * | 1992-08-21 | 1994-01-25 | Micron Technology, Inc. | Transistor antifuse for a programmable ROM |
US5395797A (en) * | 1992-12-01 | 1995-03-07 | Texas Instruments Incorporated | Antifuse structure and method of fabrication |
US5472901A (en) * | 1994-12-02 | 1995-12-05 | Lsi Logic Corporation | Process for formation of vias (or contact openings) and fuses in the same insulation layer with minimal additional steps |
-
1995
- 1995-11-17 TW TW084112222A patent/TW278229B/zh not_active IP Right Cessation
- 1995-12-22 EP EP95120432A patent/EP0720230B1/de not_active Expired - Lifetime
- 1995-12-22 DE DE69533537T patent/DE69533537T2/de not_active Expired - Fee Related
- 1995-12-22 AT AT95120432T patent/ATE277424T1/de not_active IP Right Cessation
- 1995-12-28 JP JP7343006A patent/JPH08255553A/ja not_active Withdrawn
- 1995-12-29 KR KR1019950066813A patent/KR100405027B1/ko not_active IP Right Cessation
-
1997
- 1997-01-09 US US08/781,571 patent/US5827759A/en not_active Expired - Lifetime
- 1997-03-04 US US08/811,327 patent/US5789794A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH08255553A (ja) | 1996-10-01 |
DE69533537T2 (de) | 2006-07-06 |
EP0720230B1 (de) | 2004-09-22 |
EP0720230A3 (de) | 1998-04-15 |
KR960026749A (ko) | 1996-07-22 |
DE69533537D1 (de) | 2004-10-28 |
KR100405027B1 (ko) | 2004-01-07 |
US5789794A (en) | 1998-08-04 |
US5827759A (en) | 1998-10-27 |
TW278229B (en) | 1996-06-11 |
EP0720230A2 (de) | 1996-07-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |