ATE255782T1 - Schutzstruktur einer schaltung gegen elektrostatische entladung - Google Patents
Schutzstruktur einer schaltung gegen elektrostatische entladungInfo
- Publication number
- ATE255782T1 ATE255782T1 AT98104915T AT98104915T ATE255782T1 AT E255782 T1 ATE255782 T1 AT E255782T1 AT 98104915 T AT98104915 T AT 98104915T AT 98104915 T AT98104915 T AT 98104915T AT E255782 T1 ATE255782 T1 AT E255782T1
- Authority
- AT
- Austria
- Prior art keywords
- electrostatic discharge
- protective structure
- against electrostatic
- circuit against
- zone
- Prior art date
Links
- 230000001681 protective effect Effects 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
- H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
Landscapes
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Radar Systems Or Details Thereof (AREA)
- Transmitters (AREA)
- Bipolar Integrated Circuits (AREA)
- Emergency Protection Circuit Devices (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP98104915A EP0944151B1 (de) | 1998-03-18 | 1998-03-18 | Schutzstruktur einer Schaltung gegen elektrostatische Entladung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE255782T1 true ATE255782T1 (de) | 2003-12-15 |
Family
ID=8231603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT98104915T ATE255782T1 (de) | 1998-03-18 | 1998-03-18 | Schutzstruktur einer schaltung gegen elektrostatische entladung |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0944151B1 (de) |
| AT (1) | ATE255782T1 (de) |
| DE (1) | DE69820225T2 (de) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4829350A (en) * | 1988-05-05 | 1989-05-09 | National Semiconductor Corporation | Electrostatic discharge integrated circuit protection |
| IT1253683B (it) * | 1991-09-12 | 1995-08-22 | Sgs Thomson Microelectronics | Dispositivo a bassa corrente di perdita per la protezione di un circuito integrato da scariche elettrostatiche. |
| US5291051A (en) * | 1992-09-11 | 1994-03-01 | National Semiconductor Corporation | ESD protection for inputs requiring operation beyond supply voltages |
| JP3461197B2 (ja) * | 1994-05-02 | 2003-10-27 | パイオニア株式会社 | 静電破壊防止回路 |
-
1998
- 1998-03-18 AT AT98104915T patent/ATE255782T1/de not_active IP Right Cessation
- 1998-03-18 EP EP98104915A patent/EP0944151B1/de not_active Expired - Lifetime
- 1998-03-18 DE DE1998620225 patent/DE69820225T2/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE69820225T2 (de) | 2004-11-18 |
| EP0944151A1 (de) | 1999-09-22 |
| EP0944151B1 (de) | 2003-12-03 |
| DE69820225D1 (de) | 2004-01-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |