ATE150212T1 - Lichtemittierende vorrichtung unter verwendung von polykristallinem halbleitermaterial und herstellungsverfahren dafür - Google Patents
Lichtemittierende vorrichtung unter verwendung von polykristallinem halbleitermaterial und herstellungsverfahren dafürInfo
- Publication number
- ATE150212T1 ATE150212T1 AT92106815T AT92106815T ATE150212T1 AT E150212 T1 ATE150212 T1 AT E150212T1 AT 92106815 T AT92106815 T AT 92106815T AT 92106815 T AT92106815 T AT 92106815T AT E150212 T1 ATE150212 T1 AT E150212T1
- Authority
- AT
- Austria
- Prior art keywords
- light emitting
- type semiconductor
- semiconductor material
- polycrystalline layer
- emitting device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 239000000463 material Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 150000001875 compounds Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11652391 | 1991-04-22 | ||
| JP10077892A JP3207918B2 (ja) | 1991-04-22 | 1992-04-21 | Ｉｉｉ−ｖ族化合物の多結晶半導体材料を用いた発光素子およびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE150212T1 true ATE150212T1 (de) | 1997-03-15 |
Family
ID=26441738
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT92106815T ATE150212T1 (de) | 1991-04-22 | 1992-04-21 | Lichtemittierende vorrichtung unter verwendung von polykristallinem halbleitermaterial und herstellungsverfahren dafür |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5369290A (de) |
| EP (1) | EP0510587B1 (de) |
| JP (1) | JP3207918B2 (de) |
| AT (1) | ATE150212T1 (de) |
| DE (1) | DE69218022T2 (de) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ATE159302T1 (de) * | 1990-11-07 | 1997-11-15 | Canon Kk | Iii-v verbindungs-halbleiter-vorrichtung, drucker- und anzeigevorrichtung unter verwendung derselben, und verfahren zur herstellung dieser vorrichtung |
| JPH0531957A (ja) * | 1991-05-23 | 1993-02-09 | Canon Inc | 発光装置、これを用いた光書き込みプリンターヘツド並びに該光書き込みプリンターヘツドによる光プリンター装置 |
| DE69218038T2 (de) * | 1991-05-23 | 1997-08-28 | Canon Kk | Lichtemittierende Vorrichtung, optischer Druckkopf mit solcher Vorrichtung, und optischer Drucker mit solchem Druckkopf |
| AU4695096A (en) * | 1995-01-06 | 1996-07-24 | National Aeronautics And Space Administration - Nasa | Minority carrier device |
| US6479939B1 (en) * | 1998-10-16 | 2002-11-12 | Si Diamond Technology, Inc. | Emitter material having a plurlarity of grains with interfaces in between |
| JP4310076B2 (ja) * | 2001-05-31 | 2009-08-05 | キヤノン株式会社 | 結晶性薄膜の製造方法 |
| US6887736B2 (en) * | 2002-06-24 | 2005-05-03 | Cermet, Inc. | Method of forming a p-type group II-VI semiconductor crystal layer on a substrate |
| JP4063050B2 (ja) * | 2002-10-31 | 2008-03-19 | 豊田合成株式会社 | ｐ型ＩＩＩ族窒化物系化合物半導体の電極およびその製造方法 |
| CN100416840C (zh) * | 2002-11-01 | 2008-09-03 | 株式会社半导体能源研究所 | 半导体装置及半导体装置的制作方法 |
| US7723154B1 (en) | 2005-10-19 | 2010-05-25 | North Carolina State University | Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities |
| US9406505B2 (en) * | 2006-02-23 | 2016-08-02 | Allos Semiconductors Gmbh | Nitride semiconductor component and process for its production |
| US9012253B2 (en) * | 2009-12-16 | 2015-04-21 | Micron Technology, Inc. | Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods |
| US7829376B1 (en) | 2010-04-07 | 2010-11-09 | Lumenz, Inc. | Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities |
| US10923348B2 (en) | 2019-05-29 | 2021-02-16 | International Business Machines Corporation | Gate-all-around field effect transistor using template-assisted-slective-epitaxy |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60194581A (ja) * | 1984-03-16 | 1985-10-03 | Nec Corp | 多結晶シリコン太陽電池 |
| JP2659745B2 (ja) * | 1987-03-26 | 1997-09-30 | キヤノン株式会社 | ▲ｉｉｉ▼−ｖ族化合物結晶物品およびその形成方法 |
| JP2592834B2 (ja) * | 1987-03-27 | 1997-03-19 | キヤノン株式会社 | 結晶物品およびその形成方法 |
| CA1321121C (en) * | 1987-03-27 | 1993-08-10 | Hiroyuki Tokunaga | Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same |
| US5036373A (en) * | 1989-06-01 | 1991-07-30 | Semiconductor Energy Laboratory Co., Ltd. | Electric device with grains and an insulating layer |
-
1992
- 1992-04-21 DE DE69218022T patent/DE69218022T2/de not_active Expired - Fee Related
- 1992-04-21 AT AT92106815T patent/ATE150212T1/de not_active IP Right Cessation
- 1992-04-21 EP EP92106815A patent/EP0510587B1/de not_active Expired - Lifetime
- 1992-04-21 JP JP10077892A patent/JP3207918B2/ja not_active Expired - Fee Related
- 1992-04-22 US US07/872,287 patent/US5369290A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE69218022T2 (de) | 1997-08-14 |
| EP0510587B1 (de) | 1997-03-12 |
| JPH05129657A (ja) | 1993-05-25 |
| DE69218022D1 (de) | 1997-04-17 |
| US5369290A (en) | 1994-11-29 |
| EP0510587A1 (de) | 1992-10-28 |
| JP3207918B2 (ja) | 2001-09-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |