AT340481B - COMBINATION OF A BIPOLAR TRANSISTOR AND A FIELD EFFECT TRANSISTOR WITH INSULATED GATE ELECTRODE IN THIN-LAYER TECHNOLOGY - Google Patents

COMBINATION OF A BIPOLAR TRANSISTOR AND A FIELD EFFECT TRANSISTOR WITH INSULATED GATE ELECTRODE IN THIN-LAYER TECHNOLOGY

Info

Publication number
AT340481B
AT340481B AT917974A AT917974A AT340481B AT 340481 B AT340481 B AT 340481B AT 917974 A AT917974 A AT 917974A AT 917974 A AT917974 A AT 917974A AT 340481 B AT340481 B AT 340481B
Authority
AT
Austria
Prior art keywords
thin
combination
gate electrode
field effect
insulated gate
Prior art date
Application number
AT917974A
Other languages
German (de)
Other versions
ATA917974A (en
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of ATA917974A publication Critical patent/ATA917974A/en
Application granted granted Critical
Publication of AT340481B publication Critical patent/AT340481B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
AT917974A 1973-12-20 1974-11-15 COMBINATION OF A BIPOLAR TRANSISTOR AND A FIELD EFFECT TRANSISTOR WITH INSULATED GATE ELECTRODE IN THIN-LAYER TECHNOLOGY AT340481B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2363577A DE2363577A1 (en) 1973-12-20 1973-12-20 COMBINATION OF A BIPOLAR TRANSISTOR AND A MOS FIELD EFFECT TRANSISTOR

Publications (2)

Publication Number Publication Date
ATA917974A ATA917974A (en) 1977-04-15
AT340481B true AT340481B (en) 1977-12-12

Family

ID=5901421

Family Applications (1)

Application Number Title Priority Date Filing Date
AT917974A AT340481B (en) 1973-12-20 1974-11-15 COMBINATION OF A BIPOLAR TRANSISTOR AND A FIELD EFFECT TRANSISTOR WITH INSULATED GATE ELECTRODE IN THIN-LAYER TECHNOLOGY

Country Status (11)

Country Link
JP (1) JPS5094887A (en)
AT (1) AT340481B (en)
BE (1) BE823686R (en)
CA (1) CA1033468A (en)
CH (1) CH586959A5 (en)
DE (1) DE2363577A1 (en)
FR (1) FR2255710B2 (en)
GB (1) GB1481184A (en)
IT (1) IT1046735B (en)
NL (1) NL7416703A (en)
SE (1) SE404853B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0118336A1 (en) * 1983-02-03 1984-09-12 Fairchild Semiconductor Corporation High voltage MOS/bipolar power transistor apparatus

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3620686C2 (en) * 1986-06-20 1999-07-22 Daimler Chrysler Ag Structured semiconductor body
US4857766A (en) * 1987-10-30 1989-08-15 International Business Machine Corporation BiMos input circuit
WO2009019866A1 (en) * 2007-08-07 2009-02-12 Kaori Takakubo Semiconductor device and method for driving the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0118336A1 (en) * 1983-02-03 1984-09-12 Fairchild Semiconductor Corporation High voltage MOS/bipolar power transistor apparatus

Also Published As

Publication number Publication date
CA1033468A (en) 1978-06-20
FR2255710A2 (en) 1975-07-18
JPS5094887A (en) 1975-07-28
SE404853B (en) 1978-10-30
DE2363577A1 (en) 1975-06-26
GB1481184A (en) 1977-07-27
SE7416017L (en) 1975-06-23
CH586959A5 (en) 1977-04-15
ATA917974A (en) 1977-04-15
BE823686R (en) 1975-04-16
FR2255710B2 (en) 1979-02-23
NL7416703A (en) 1975-06-24
IT1046735B (en) 1980-07-31

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