AT336080B - SEMI-CONDUCTOR ARRANGEMENT WITH AT LEAST TWO FIELD EFFECT TRANSISTORS WITH INSULATED GATE ELECTRODE - Google Patents

SEMI-CONDUCTOR ARRANGEMENT WITH AT LEAST TWO FIELD EFFECT TRANSISTORS WITH INSULATED GATE ELECTRODE

Info

Publication number
AT336080B
AT336080B AT564470A AT564470A AT336080B AT 336080 B AT336080 B AT 336080B AT 564470 A AT564470 A AT 564470A AT 564470 A AT564470 A AT 564470A AT 336080 B AT336080 B AT 336080B
Authority
AT
Austria
Prior art keywords
semi
gate electrode
field effect
effect transistors
insulated gate
Prior art date
Application number
AT564470A
Other languages
German (de)
Other versions
ATA564470A (en
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of ATA564470A publication Critical patent/ATA564470A/en
Application granted granted Critical
Publication of AT336080B publication Critical patent/AT336080B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AT564470A 1969-06-26 1970-06-23 SEMI-CONDUCTOR ARRANGEMENT WITH AT LEAST TWO FIELD EFFECT TRANSISTORS WITH INSULATED GATE ELECTRODE AT336080B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6909788A NL165005C (en) 1969-06-26 1969-06-26 SEMICONDUCTOR DEVICE CONTAINING FIELD EFFECT TRANSISTORS WITH INSULATED CONTROL ELECTRODE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE.

Publications (2)

Publication Number Publication Date
ATA564470A ATA564470A (en) 1976-08-15
AT336080B true AT336080B (en) 1977-04-12

Family

ID=19807307

Family Applications (1)

Application Number Title Priority Date Filing Date
AT564470A AT336080B (en) 1969-06-26 1970-06-23 SEMI-CONDUCTOR ARRANGEMENT WITH AT LEAST TWO FIELD EFFECT TRANSISTORS WITH INSULATED GATE ELECTRODE

Country Status (8)

Country Link
AT (1) AT336080B (en)
BE (1) BE752480A (en)
CH (1) CH514937A (en)
DE (1) DE2029058C2 (en)
FR (1) FR2047958B1 (en)
GB (1) GB1325332A (en)
NL (1) NL165005C (en)
SE (1) SE365905B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5528229B1 (en) * 1971-03-19 1980-07-26
US3728161A (en) * 1971-12-28 1973-04-17 Bell Telephone Labor Inc Integrated circuits with ion implanted chan stops
JPS559834B2 (en) * 1972-03-31 1980-03-12
JPS551189A (en) * 1979-05-07 1980-01-07 Nec Corp Semiconductor device
JPS55102274A (en) * 1980-01-25 1980-08-05 Agency Of Ind Science & Technol Insulated gate field effect transistor
GB2123605A (en) * 1982-06-22 1984-02-01 Standard Microsyst Smc MOS integrated circuit structure and method for its fabrication

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE636317A (en) * 1962-08-23 1900-01-01
US3400383A (en) * 1964-08-05 1968-09-03 Texas Instruments Inc Trainable decision system and adaptive memory element
US3417464A (en) * 1965-05-21 1968-12-24 Ibm Method for fabricating insulated-gate field-effect transistors
GB1145092A (en) * 1965-06-09 1969-03-12 Mullard Ltd Improvements in insulated gate field effect semiconductor devices
GB1155578A (en) * 1965-10-08 1969-06-18 Sony Corp Field Effect Transistor
US3440502A (en) * 1966-07-05 1969-04-22 Westinghouse Electric Corp Insulated gate field effect transistor structure with reduced current leakage
GB1131675A (en) * 1966-07-11 1968-10-23 Hitachi Ltd Semiconductor device
US3440500A (en) * 1966-09-26 1969-04-22 Itt High frequency field effect transistor
GB1203298A (en) * 1967-01-10 1970-08-26 Hewlett Packard Co Mis integrated circuit and method of fabricating the same

Also Published As

Publication number Publication date
DE2029058A1 (en) 1971-01-07
FR2047958A1 (en) 1971-03-19
FR2047958B1 (en) 1975-09-26
GB1325332A (en) 1973-08-01
ATA564470A (en) 1976-08-15
NL165005B (en) 1980-09-15
NL6909788A (en) 1970-12-29
BE752480A (en) 1970-12-24
CH514937A (en) 1971-10-31
DE2029058C2 (en) 1983-06-23
SE365905B (en) 1974-04-01
NL165005C (en) 1981-02-16

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