AR044149A1 - Produccion de monoxido de niobio de alta pureza - Google Patents

Produccion de monoxido de niobio de alta pureza

Info

Publication number
AR044149A1
AR044149A1 ARP040101488A ARP040101488A AR044149A1 AR 044149 A1 AR044149 A1 AR 044149A1 AR P040101488 A ARP040101488 A AR P040101488A AR P040101488 A ARP040101488 A AR P040101488A AR 044149 A1 AR044149 A1 AR 044149A1
Authority
AR
Argentina
Prior art keywords
high purity
mixture
niobio
monoxide production
boyfriend
Prior art date
Application number
ARP040101488A
Other languages
English (en)
Inventor
Charles A Motchenbacher
James W Robison
Brian J Higgins
Thomas J Fonville
Original Assignee
Reading Alloys
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Reading Alloys filed Critical Reading Alloys
Publication of AR044149A1 publication Critical patent/AR044149A1/es

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004Details
    • H01G9/04Electrodes or formation of dielectric layers thereon
    • H01G9/048Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052Sintered electrodes
    • H01G9/0525Powder therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00Making metallic powder or suspensions thereof
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G33/00Compounds of niobium
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/70Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/01Particle morphology depicted by an image
    • C01P2004/03Particle morphology depicted by an image obtained by SEM
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/51Particles with a specific particle size distribution
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/61Micrometer sized, i.e. from 1-100 micrometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/62Submicrometer sized, i.e. from 0.1-1 micrometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/12Surface area
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/14Pore volume
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/16Pore diameter
    • C01P2006/17Pore diameter distribution
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/40Electric properties
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/80Compositional purity

Abstract

Reivindicación 1: Un polvo de alta pureza de monóxido de niobio (NbO), producido por un proceso caracterizado porque comprende: a) combinar en una mezcla de (1) óxido de novio seleccionado del grupo de Nb2O5, NbO2 y Nb2O3, y (2) novio metálico, (b) formar un compactado con dicha mezcla, c) hacer reaccionar la mezcla con una fuente de calor tal que se logre una temperatura mayor a 1945º C, d) solidificar la mezcla de reacción para formar un cuerpo de material, y e) fragmentar dicho cuerpo para formar polvo de monóxido de niobio.
ARP040101488A 2003-05-02 2004-04-30 Produccion de monoxido de niobio de alta pureza AR044149A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/428,430 US7157073B2 (en) 2003-05-02 2003-05-02 Production of high-purity niobium monoxide and capacitor production therefrom

Publications (1)

Publication Number Publication Date
AR044149A1 true AR044149A1 (es) 2005-08-24

Family

ID=33310401

Family Applications (1)

Application Number Title Priority Date Filing Date
ARP040101488A AR044149A1 (es) 2003-05-02 2004-04-30 Produccion de monoxido de niobio de alta pureza

Country Status (13)

Country Link
US (5) US7157073B2 (es)
EP (1) EP1622835A4 (es)
JP (1) JP4382812B2 (es)
KR (1) KR20060096180A (es)
CN (1) CN100418888C (es)
AR (1) AR044149A1 (es)
BR (1) BRPI0410487A (es)
CA (1) CA2523564A1 (es)
IL (1) IL171666A (es)
MY (1) MY140945A (es)
RU (1) RU2346891C2 (es)
TW (1) TWI329330B (es)
WO (1) WO2004099080A1 (es)

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US7157073B2 (en) * 2003-05-02 2007-01-02 Reading Alloys, Inc. Production of high-purity niobium monoxide and capacitor production therefrom
WO2004103906A2 (en) 2003-05-19 2004-12-02 Cabot Corporation Methods of making a niobium metal oxide and oxygen reduced niobium oxides
DE502004011120D1 (de) * 2003-07-15 2010-06-17 Starck H C Gmbh Niobsuboxidpulver
US7099143B1 (en) 2005-05-24 2006-08-29 Avx Corporation Wet electrolytic capacitors
WO2007020464A1 (en) * 2005-08-19 2007-02-22 Avx Limited Solid state capacitors and method of manufacturing them
GB0517952D0 (en) * 2005-09-02 2005-10-12 Avx Ltd Method of forming anode bodies for solid state capacitors
US7511943B2 (en) * 2006-03-09 2009-03-31 Avx Corporation Wet electrolytic capacitor containing a cathode coating
GB0622463D0 (en) 2006-11-10 2006-12-20 Avx Ltd Powder modification in the manufacture of solid state capacitor anodes
US20080112879A1 (en) * 2006-11-15 2008-05-15 Mccracken Colin G Production of high-purity titanium monoxide and capacitor production therefrom
US20080253958A1 (en) * 2006-11-15 2008-10-16 Mccracken Colin G Production of high-purity titanium monoxide and capacitor production therefrom
US7649730B2 (en) 2007-03-20 2010-01-19 Avx Corporation Wet electrolytic capacitor containing a plurality of thin powder-formed anodes
US7760487B2 (en) * 2007-10-22 2010-07-20 Avx Corporation Doped ceramic powder for use in forming capacitor anodes
US7852615B2 (en) * 2008-01-22 2010-12-14 Avx Corporation Electrolytic capacitor anode treated with an organometallic compound
US7760488B2 (en) * 2008-01-22 2010-07-20 Avx Corporation Sintered anode pellet treated with a surfactant for use in an electrolytic capacitor
US7768773B2 (en) * 2008-01-22 2010-08-03 Avx Corporation Sintered anode pellet etched with an organic acid for use in an electrolytic capacitor
US10583424B2 (en) * 2008-11-06 2020-03-10 Basf Corporation Chabazite zeolite catalysts having low silica to alumina ratios
US8203827B2 (en) * 2009-02-20 2012-06-19 Avx Corporation Anode for a solid electrolytic capacitor containing a non-metallic surface treatment
WO2012135598A2 (en) * 2011-03-30 2012-10-04 The Regents Of The University Of California Use of il-17d for the treatment and prevention of cancers
US10347471B2 (en) 2012-11-13 2019-07-09 Jx Nippon Mining & Metals Corporation NbO2 sintered compact, sputtering target comprising the sintered compact, and method of producing NbO2 sintered compact
AT516081B1 (de) * 2014-07-16 2018-02-15 Lkr Leichtmetallkompetenzzentrum Ranshofen Gmbh Verfahren und Vorrichtung zum Reinigen eines porösen Werkstoffes
CN104445403B (zh) * 2014-11-10 2016-05-25 九江有色金属冶炼有限公司 一种二氧化铌的制备方法及其所制得的产品
CN106623981B (zh) * 2016-09-30 2018-11-06 九江波德新材料研究有限公司 一种利用等离子分解制备一氧化铌与铌粉混合物的方法
CN110963529B (zh) * 2018-09-30 2021-12-07 中国科学院上海硅酸盐研究所 一种纯相的铌的低价态氧化物纳米粉体及其制备方法和应用
RU2758401C1 (ru) * 2021-03-01 2021-10-28 Федеральное государственное бюджетное учреждение науки Институт химии твердого тела Уральского отделения Российской академии наук Способ получения монооксида ниобия
CN113800563B (zh) * 2021-10-26 2022-07-08 济南大学 一种NbO微球及其水热合成法与应用

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US3635693A (en) * 1969-01-27 1972-01-18 Starck Hermann C Fa Method of producing tantalum or niobium powder from compact bodies
US5242481A (en) * 1989-06-26 1993-09-07 Cabot Corporation Method of making powders and products of tantalum and niobium
US5993513A (en) * 1996-04-05 1999-11-30 Cabot Corporation Method for controlling the oxygen content in valve metal materials
EP1075884A3 (en) 1996-11-07 2005-10-05 Cabot Corporation Niobium powders and niobium electrolytic capacitors
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US6416730B1 (en) * 1998-09-16 2002-07-09 Cabot Corporation Methods to partially reduce a niobium metal oxide oxygen reduced niobium oxides
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BR0009107A (pt) 1999-03-19 2002-12-31 Cabot Corp Método para produzir pó de nióbio e outros pós metálicos através de moagem
AU3923300A (en) 1999-03-26 2000-10-16 Cabot Corporation Fumed metal oxide comprising catalytic converter
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JP4049964B2 (ja) 2000-02-08 2008-02-20 キャボットスーパーメタル株式会社 窒素含有金属粉末およびその製造方法ならびにそれを用いた多孔質焼結体および固体電解コンデンサー
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US6576099B2 (en) * 2000-03-23 2003-06-10 Cabot Corporation Oxygen reduced niobium oxides
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Also Published As

Publication number Publication date
US20070092434A1 (en) 2007-04-26
US20040219094A1 (en) 2004-11-04
TWI329330B (en) 2010-08-21
JP2006525222A (ja) 2006-11-09
RU2346891C2 (ru) 2009-02-20
US20050002854A1 (en) 2005-01-06
US20080226488A1 (en) 2008-09-18
US7585486B2 (en) 2009-09-08
EP1622835A4 (en) 2013-02-27
RU2005137576A (ru) 2006-04-27
CN100418888C (zh) 2008-09-17
EP1622835A1 (en) 2006-02-08
WO2004099080A1 (en) 2004-11-18
US7157073B2 (en) 2007-01-02
KR20060096180A (ko) 2006-09-08
US20070081937A1 (en) 2007-04-12
CN1812935A (zh) 2006-08-02
IL171666A (en) 2011-06-30
BRPI0410487A (pt) 2006-06-13
MY140945A (en) 2010-02-12
CA2523564A1 (en) 2004-11-18
JP4382812B2 (ja) 2009-12-16
TW200511338A (en) 2005-03-16

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