ZA746269B - Improvements in or relating to the manufacutre of uniformly doped p-conductive silicon monocrystals - Google Patents
Improvements in or relating to the manufacutre of uniformly doped p-conductive silicon monocrystalsInfo
- Publication number
- ZA746269B ZA746269B ZA00746269A ZA746269A ZA746269B ZA 746269 B ZA746269 B ZA 746269B ZA 00746269 A ZA00746269 A ZA 00746269A ZA 746269 A ZA746269 A ZA 746269A ZA 746269 B ZA746269 B ZA 746269B
- Authority
- ZA
- South Africa
- Prior art keywords
- manufacutre
- relating
- conductive silicon
- uniformly doped
- silicon monocrystals
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/261—Bombardment with radiation to produce a nuclear reaction transmuting chemical elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K5/00—Irradiation devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2407697A DE2407697C3 (en) | 1974-02-18 | 1974-02-18 | Process for producing a homogeneously Ga-doped silicon single crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
ZA746269B true ZA746269B (en) | 1975-10-29 |
Family
ID=5907718
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ZA00746269A ZA746269B (en) | 1974-02-18 | 1974-10-02 | Improvements in or relating to the manufacutre of uniformly doped p-conductive silicon monocrystals |
Country Status (12)
Country | Link |
---|---|
JP (1) | JPS5329572B2 (en) |
AT (1) | AT339379B (en) |
BE (1) | BE816719A (en) |
DE (1) | DE2407697C3 (en) |
DK (1) | DK658274A (en) |
FR (1) | FR2261055B1 (en) |
GB (1) | GB1442930A (en) |
IT (1) | IT1031627B (en) |
NL (1) | NL7410745A (en) |
PL (1) | PL91842B1 (en) |
SU (1) | SU717999A3 (en) |
ZA (1) | ZA746269B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9799736B1 (en) | 2016-07-20 | 2017-10-24 | International Business Machines Corporation | High acceptor level doping in silicon germanium |
-
1974
- 1974-02-18 DE DE2407697A patent/DE2407697C3/en not_active Expired
- 1974-06-21 BE BE145761A patent/BE816719A/en unknown
- 1974-08-09 NL NL7410745A patent/NL7410745A/en not_active Application Discontinuation
- 1974-08-14 AT AT667874A patent/AT339379B/en active
- 1974-09-11 GB GB3955974A patent/GB1442930A/en not_active Expired
- 1974-09-25 PL PL1974174329A patent/PL91842B1/pl unknown
- 1974-10-02 ZA ZA00746269A patent/ZA746269B/en unknown
- 1974-12-17 DK DK658274A patent/DK658274A/da unknown
-
1975
- 1975-02-11 IT IT20138/75A patent/IT1031627B/en active
- 1975-02-12 JP JP1777675A patent/JPS5329572B2/ja not_active Expired
- 1975-02-17 SU SU752106377A patent/SU717999A3/en active
- 1975-02-17 FR FR7504804A patent/FR2261055B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2261055A1 (en) | 1975-09-12 |
AT339379B (en) | 1977-10-10 |
BE816719A (en) | 1974-10-16 |
DE2407697A1 (en) | 1975-09-18 |
JPS5329572B2 (en) | 1978-08-22 |
JPS50120253A (en) | 1975-09-20 |
SU717999A3 (en) | 1980-02-25 |
FR2261055B1 (en) | 1979-01-05 |
ATA667874A (en) | 1977-02-15 |
DE2407697C3 (en) | 1978-11-30 |
IT1031627B (en) | 1979-05-10 |
DE2407697B2 (en) | 1978-04-06 |
DK658274A (en) | 1975-10-27 |
GB1442930A (en) | 1976-07-14 |
PL91842B1 (en) | 1977-03-31 |
NL7410745A (en) | 1975-08-20 |
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