WO2024048206A1 - Laminate, method for producing laminate, laminated substrate, and method for producing laminated substrate - Google Patents
Laminate, method for producing laminate, laminated substrate, and method for producing laminated substrate Download PDFInfo
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- WO2024048206A1 WO2024048206A1 PCT/JP2023/028612 JP2023028612W WO2024048206A1 WO 2024048206 A1 WO2024048206 A1 WO 2024048206A1 JP 2023028612 W JP2023028612 W JP 2023028612W WO 2024048206 A1 WO2024048206 A1 WO 2024048206A1
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- conductive
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- impregnated
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Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/05—Interconnection of layers the layers not being connected over the whole surface, e.g. discontinuous connection or patterned connection
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
Definitions
- the present disclosure relates to a laminate, a method for manufacturing a laminate, a laminate substrate, and a method for manufacturing a laminate substrate.
- a ceramic plate made of silicon nitride or the like is used for the above-mentioned insulating layer.
- a brazing material is used to bond the ceramic plate and the metal circuit, and bonding requires heating at a relatively high temperature. Therefore, if the area of the metal plates to be laminated (the plates before the metal circuit pattern is formed) is larger than the area of the ceramic plate, the metal plates may be deformed by their own weight during heating. If such deformation occurs, peeling and poor contact between the ceramic plate and the metal circuit may occur. Therefore, the shape of the metal plates to be laminated is limited to a shape that fits within the area of the main surface of the ceramic plate. Therefore, for connection to an external circuit, it is necessary to separately provide a terminal on the metal plate or the metal circuit after the ceramic plate and the metal plate are bonded together.
- a composite made of a ceramic such as boron nitride and a semi-hardened resin is also used as an insulating layer that has heat dissipation and adhesive properties.
- a composite sheet such as a semi-cured resin-impregnated plate obtained by impregnating a porous ceramic plate (for example, a boron nitride sintered plate) with a semi-cured resin is also being considered. (For example, see Patent Document 1).
- the thermal resistance of the laminated substrate is It is also being considered to reduce the heat dissipation and improve heat dissipation (for example, see Patent Document 2).
- the shape of the metal plates to be laminated is determined by the shape of the main surface of the ceramic plate, according to the manufacturing method of a laminated board obtained by bonding each member using a brazing material. It is said that the shape fits within the area of .
- a laminated board including an insulating layer and a metal circuit if the metal circuit provided on the insulating plate and the terminal etc. can be integrally formed when bonding the insulating plate and the metal plate, for example, the metal circuit It is possible to suppress power loss and the like at the connection interface between the terminal and the external terminal, and it would be useful if there was a method for manufacturing such a laminated board.
- the present disclosure manufactures a laminated board that has excellent adhesiveness between the insulating plate and the metal circuit, in which a metal circuit provided on the insulating plate and a protrusion protruding outward from the main surface of the insulating plate are integrally formed.
- the purpose is to provide a method for Another object of the present disclosure is to provide a multilayer substrate with low insulation properties and low power loss in circuits.
- Another object of the present disclosure is to provide a laminate suitable for manufacturing a laminate substrate as described above, and a method for manufacturing the same.
- the present disclosure provides the following [1] to [13].
- [5] comprising a metal plate, a resin filling plate provided on the metal plate, and one or more conductive parts provided on the resin filling plate, At least one of the one or more conductive parts includes a substrate part existing on the resin filling plate and a protruding part protruding to the outside of the main surface of the resin filling plate when viewed from above. is a conductive part, A laminated substrate, wherein a side surface of the first conductive part is inclined with respect to a lamination direction. [6] The laminated substrate according to [5], wherein the amount of warpage, which is the amount of displacement of the protruding portion in the direction from the conductive portion toward the metal plate, is less than 0.50 mm.
- [12] comprising a metal plate, a resin filling plate provided on the metal plate, and a conductive plate provided on the resin filling plate,
- the conductive plate is a laminate, in which the conductive plate has a substrate portion existing on the resin filling plate and a protruding portion existing outside the main surface of the resin filling plate when viewed from above.
- the laminate according to [12] wherein the amount of warpage of the protruding portion in the direction from the conductive plate toward the metal plate is less than 0.30 mm.
- a laminated substrate with excellent adhesiveness between the insulating plate and the metal circuit in which a metal circuit provided on the insulating plate and a protruding portion protruding outward from the main surface of the insulating plate are integrally formed.
- a method for manufacturing in which a metal circuit provided on the insulating plate and a protruding portion protruding outward from the main surface of the insulating plate are integrally formed.
- FIG. 1 is a schematic diagram for explaining an example of a method for manufacturing a laminate and a laminate substrate.
- FIG. 2 is a schematic diagram for explaining an example of a method for manufacturing a laminate and a laminate substrate.
- FIG. 3 is an enlarged view of region R shown in FIG. 2(c).
- FIG. 4 is a schematic diagram showing an example of a laminated substrate. 5 is an end view taken along line VV shown in FIG. 4.
- FIG. FIG. 6 is a plan view schematically showing an example of a laminated substrate.
- FIG. 7 is a schematic diagram for explaining the amount of warpage.
- FIG. 8 is a schematic diagram showing the wiring pattern manufactured in the example.
- the materials exemplified in this specification can be used alone or in combination of two or more. If there are multiple substances corresponding to each component in the composition, the content of each component in the composition means the total amount of the multiple substances present in the composition, unless otherwise specified. .
- the laminate according to the present disclosure can be suitably used to manufacture the laminate substrate according to the present disclosure.
- the multilayer substrate according to the present disclosure may be used as, for example, a printed wiring board.
- One embodiment of the method for producing a laminate includes laminating a metal plate, a semi-cured resin-impregnated plate, and a conductive plate in this order, and heat-treating the semi-cured resin-impregnated plate at a temperature of 200°C or less to form a semi-cured resin. and bonding the cured product of the semi-cured resin-impregnated plate with the metal plate and the conductive plate to obtain a laminate.
- the conductive plate has a portion existing on the semi-cured resin impregnated plate and a portion existing outside the main surface of the semi-cured resin impregnated plate when viewed from above.
- a laminated substrate can also be manufactured by processing a wiring pattern on the laminated body. That is, one embodiment of the method for manufacturing a laminated board further includes forming a wiring pattern on the conductive plate of the laminated body.
- the conductive plates are laminated so that a part of the conductive plates protrudes outside the main surface of the semi-cured resin-impregnated plate when viewed from above, and further, by using the semi-cured resin-impregnated plate, Compared to conventional solder connections, it is now possible to manufacture laminates at lower temperatures. By adopting such a configuration, it is possible to manufacture a laminate board in which a metal circuit provided on an insulating plate and a protrusion protruding outward from the main surface of the insulating plate are integrally formed. Obtainable.
- FIGS. 1 and 2 are schematic diagrams for explaining an example of a method for manufacturing a laminate and a laminate substrate.
- (a), (b), and (c) of FIG. 2 schematically show cross sections corresponding to (a), (b), and (c) of FIG. 1, respectively.
- FIG. 1(a) shows a step of preparing an intermediate 100.
- the intermediate body 100 shown in FIG. 1(a) includes a laminate having a metal plate 20, a semi-cured resin-impregnated plate 30 laminated on the metal plate 20, and a side of the semi-cured resin-impregnated plate 30 of the laminate.
- the conductive plate 50 further includes a laminated conductive plate 50.
- FIG. 1(b) shows the process of preparing the laminate 101.
- 1(b) is prepared by heat-treating the intermediate body 100, melting the semi-cured resin constituting the semi-cured resin-impregnated plate 30, and further curing the metal plate. 20, a cured product of the semi-cured resin-impregnated plate 30 (resin-filled plate 40) and a conductive plate 50 are provided in this order.
- the metal plate 20 can be used without particular limitation as long as it is made of metal and has a plate-like shape.
- Examples of the material of the metal plate 20 include aluminum and copper.
- the material of the metal plate 20 preferably contains copper from the viewpoint of further improving wettability with the semi-cured resin.
- the metal plate 20 may be a copper plate.
- the shape of the main surface of the metal plate 20 is the same as the shape of the main surface of the semi-cured resin impregnated plate 30.
- the thickness of the metal plate 20 may be, for example, 0.1 to 3.0 mm, 0.2 to 2.5 mm, or 0.3 to 2.0 mm.
- the thickness of the metal plate 20 may be, for example, 0.1 to 3.0 mm, 0.2 to 2.5 mm, or 0.3 to 2.0 mm.
- the semi-cured resin impregnated plate 30 includes a semi-cured resin portion made of semi-cured resin.
- the semi-cured resin may be a semi-cured product (B stage) of a resin composition containing a base resin and a curing agent.
- the semi-cured product is one in which the curing reaction of the resin composition has partially progressed.
- the semi-cured material can be further cured by a subsequent curing treatment.
- the above-mentioned cured product (C stage) of the resin composition means a resin composition in which the curing reaction has sufficiently progressed, and includes a completely cured state.
- the semi-cured resin may include a thermosetting resin produced by the reaction of the main resin and the curing agent in the resin composition.
- the semi-cured material may contain an unreacted main ingredient, a curing agent, and the like as a resin component. It can be confirmed by, for example, a differential scanning calorimeter that the semi-cured resin portion included in the semi-cured resin-impregnated plate 30 is a semi-cured product (B stage) before becoming a cured product (C stage).
- the upper limit of the curing rate of the semi-cured resin contained in the semi-cured resin-impregnated plate 30 may be, for example, 50% or less, 48% or less, 46% or less, or 42% or less.
- the lower limit of the curing rate of the semi-cured resin contained in the semi-cured resin-impregnated plate 30 may be, for example, 20% or more, 23% or more, or 25% or more.
- the lower limit of the curing rate of the semi-cured resin By setting the lower limit of the curing rate of the semi-cured resin within the above range, when heating and bonding the semi-cured resin-impregnated plate 30, the metal plate 20, and the conductive plate 50, the melt from the semi-cured resin-impregnated plate 30 is Excessive flow of the semi-cured resin is suppressed, and a higher level of both the adhesion of the semi-cured resin-impregnated board and the insulation of the resulting laminated substrate can be achieved.
- the curing rate of the semi-cured resin may be adjusted within the above-mentioned range, and may be, for example, 20 to 50%.
- the curing rate of the semi-cured resin can be determined by measurement using a differential scanning calorimeter. First, the calorific value Q per unit mass generated when 2 mg of the uncured resin composition is completely cured is measured. Then, the temperature of 10 mg of the semi-cured resin sample from the semi-cured resin-impregnated plate 30 is raised in the same manner, and the calorific value R generated per unit mass when completely cured is determined.
- the semi-cured resin content c was determined by cross-sectional SEM image analysis and thermogravimetric differential thermal analysis (TG-DTA) of the semi-cured resin-impregnated plate 30 that was the measurement target, and the determined semi-cured resin
- the calorific value of the semi-cured resin is calculated from the content of and the calorific value R obtained by the above measurement.
- Semi-cured resins include, for example, epoxy resins, cyanate resins, phenolic resins, melamine resins, urea resins, bismaleimide resins, thermosetting polyimides, maleimide resins, maleimide-modified resins, silicone resins, silicone rubber, unsaturated polyesters, polyurethanes, and alkyd resin.
- the semi-cured resin-impregnated plate 30 may include, for example, a porous sintered nitride plate and a semi-cured resin (semi-cured resin portion) filled in the pores of the sintered nitride plate.
- the nitride sintered body has nitride particles and pores formed by sintering primary nitride particles.
- the nitride may contain, for example, at least one type of nitride selected from the group consisting of boron nitride, aluminum nitride, and silicon nitride.
- the nitride sintered board include a boron nitride sintered board, an aluminum nitride sintered board, and a silicon nitride sintered board.
- the nitride sintered board is preferably a boron nitride sintered board because it is easier to form pores for resin filling and has excellent elastic modulus for long-term reliability.
- the upper limit of the median pore diameter of the pores of the nitride sintered plate is, for example, 4.0 ⁇ m or less, 3.8 ⁇ m or less, 3.6 ⁇ m or less, 3.4 ⁇ m or less, 3.2 ⁇ m or less, or 3.0 ⁇ m or less. It's good. Since such a nitride sintered plate has small pore sizes, the contact area between the nitride particles becomes sufficiently large, and the thermal conductivity can be increased.
- the lower limit of the median pore diameter of the sintered nitride plate is, for example, 1.5 ⁇ m or more, 1.6 ⁇ m or more, 1.7 ⁇ m or more, 1.8 ⁇ m or more, 1.9 ⁇ m or more, or 2.0 ⁇ m or more. It's good.
- the median pore diameter of the pores of the sintered nitride plate may be adjusted within the above-mentioned range, for example, from 1.5 to 4.0 ⁇ m, or from 2.0 to 3.0 ⁇ m.
- the median pore diameter of the pores of the nitride sintered plate can be measured using the following procedure. First, the semi-cured resin-impregnated plate or resin-filled plate to be measured is heated to remove the semi-cured resin and resin (cured resin). Then, using a mercury porosimeter, the pore size distribution is determined when the nitride sintered plate is pressurized while increasing the pressure from 0.0042 MPa to 206.8 MPa. When the horizontal axis is the pore diameter and the vertical axis is the cumulative pore volume, the pore diameter when the cumulative pore volume reaches 50% of the total pore volume is the median pore diameter. As the mercury porosimeter, for example, one manufactured by Shimadzu Corporation can be used.
- the porosity of the nitride sintered board that is, the upper limit of the volume ratio of pores in the nitride sintered board may be, for example, 65 volume% or less, 60 volume% or less, or 58 volume% or less. .
- the lower limit of the porosity of the nitride sintered plate may be, for example, 40 volume % or more, 42 volume % or more, 44 volume % or more, or 45 volume % or more.
- the content of the semi-cured resin can be improved, and the adhesiveness with the metal plate and the conductive plate can be further improved.
- the porosity of the sintered nitride plate may be adjusted within the above-mentioned range, for example, 40-65% by volume, or 40-60% by volume.
- the porosity of the nitride sintered plate is determined by calculating the bulk density [Y (kg/m 3 )] from the volume and mass of the nitride sintered plate, and then calculating the bulk density and the theoretical density of the nitride [X (kg/m 3 )]. /m 3 )] by the following formula (2).
- the thickness of the sintered nitride plate may be, for example, 5.0 mm or less, 3.0 mm or less, or 2.0 mm or less.
- the lower limit of the thickness of the nitride sintered plate may be, for example, 0.1 mm or more, 0.3 mm or more, or 0.5 mm or more.
- the thickness of the sintered nitride plate may be adjusted within the above-mentioned range, and may be, for example, 0.1-5.0 mm, 0.1-2.0 mm, or 0.3-2.0 mm.
- the thickness of the nitride sintered plate is measured along the direction perpendicular to the main surface, and if the thickness is not constant, select 10 arbitrary points and measure the thickness, and the average value is the above value. It is sufficient if it is within the range of . Note that the thickness of the semi-cured resin-impregnated board and the thickness of the resin-filled board correspond to the thickness of the nitride sintered board.
- the size of the main surface of the semi-cured resin-impregnated plate 30 is not particularly limited, and may be, for example, 50 mm 2 or more, 200 mm 2 or more, 500 mm 2 or more, 800 mm 2 or more, or 1000 mm 2 or more.
- the size of the main surface of the semi-cured resin-impregnated plate 30 may be, for example, 250,000 mm 2 or less, or 150,000 mm 2 or less.
- the size of the main surface of the semi-cured resin-impregnated plate 30 may be adjusted within the above-mentioned range, and may be, for example, 50 to 250,000 mm 2 or 200 to 150,000 mm 2 .
- the sizes of the pair of main surfaces of the semi-cured resin-impregnated plate 30 are generally the same, but do not need to be completely the same and may be different from each other.
- the shape of the main surface of the semi-cured resin-impregnated plate 30 is shown as a square.
- the shape of the main surface of the semi-cured resin-impregnated plate 30 is not limited to this, and may be, for example, a polygon other than a quadrangle.
- the conductive plate 50 is a member that will later become the metal circuit layer 60, and is made of a conductor.
- the material of the conductive plate 50 may be the same as or different from that of the metal plate 20. Examples of the material of the conductive plate 50 include aluminum and copper.
- the shape of the main surface of the conductive plate 50 is shown as a square.
- the shape of the main surface of the conductive plate 50 is not limited to this, and may be, for example, a polygon other than a quadrangle, a circle, or a shape with a part cut out. There may be.
- the upper limit of the thickness of the conductive plate 50 may be, for example, 1.5 mm or less, 1.0 mm or less, 0.8 mm or less, or 0.6 mm or less.
- the lower limit of the thickness of the conductive plate 50 may be, for example, 0.1 mm or more, 0.3 mm or more, or 0.4 mm or more.
- the thickness of the conductive plate 50 may be adjusted within the above-mentioned range, and may be, for example, 0.1 to 1.5 mm, or 0.3 to 1.0 mm.
- the thickness of the conductive plate 50 is measured along the direction perpendicular to the main surface, and if the thickness is not constant, select 10 arbitrary points and measure the thickness, and the average value falls within the above range. That's fine.
- the conductive plate 50 can be arranged so as to have a portion 50a existing on the semi-cured resin impregnated plate and a portion 50b existing outside the main surface of the semi-cured resin impregnated plate 30 when viewed from above.
- the length L0 of the portion 50b of the conductive plate 50 that exists outside the main surface of the semi-cured resin-impregnated plate 30 when viewed from above is determined depending on the purpose of use of the laminate and the laminate substrate. can be adjusted.
- the lower limit of the length L0 of the portion 50b may be, for example, 2.0 mm or more, 3.0 mm or more, 4.0 mm or more, or 5.0 mm or more.
- the upper limit of the length L 0 may be, for example, 15.0 mm or less, 13.0 mm or less, 12.0 mm or less, or 10.0 mm or less.
- the length L 0 of the portion 50b may be adjusted within the above-mentioned range, for example, from 2.0 to 15.0 mm, or from 3.0 to 13.0 mm.
- the length L 0 of the portion 50b of the conductive plate 50 that exists outside the main surface of the semi-cured resin-impregnated plate 30 is defined as It means the maximum distance between the end 30E of the semi-cured resin-impregnated plate 30 and the metal plate 20 and the end 50E of the portion 50b of the conductive plate 50 when the body 100 is observed from the metal plate 20 side. do. If the main surface of the semi-cured resin-impregnated plate 30 is square and the conductive plate 50 has a portion existing outside the main surface on both sides of the main surface, the semi-cured resin-impregnated plate 30 is impregnated with a semi-cured resin.
- the end 30E of the plate 30 is the end on the side where the end 50E of the conductive plate 50 exists, which is the object of measuring the length L0 .
- the above-mentioned length L 0 shall mean the maximum value of the distance between the end of the semi-cured resin-impregnated plate 30 and the end 50E of the conductive plate 50.
- the semi-cured resin-impregnated plate 30 is heated to melt the semi-cured resin, and then hardened.
- the conductive plate 50 and the metal plate 20 are bonded to each other via the resin filling plate 40 (cured product of the semi-cured resin impregnated plate 30).
- the upper limit of the heat treatment temperature when melting and curing the semi-cured resin is 200°C or lower, but may be, for example, 195°C or lower, 190°C or lower, 185°C or lower, or 180°C or lower.
- the upper limit of the temperature of the heat treatment may be, for example, 150°C or higher, 160°C or higher, or 170°C or higher.
- the semi-cured resin can be more fully cured, and the resin-filled plate 40, metal plate 20, and conductive plate 50 in the resulting laminate It is possible to further improve the adhesive strength with
- the temperature of the heat treatment may be adjusted within the above-mentioned range, and may be, for example, 150 to 200°C, or 160 to 195°C.
- the time for the heat treatment of the semi-cured resin-impregnated plate 30 described above can be adjusted in consideration of the curing rate of the semi-cured resin and the manufacturing time taking into account other steps.
- the lower limit of the heat treatment time may be, for example, 2.0 hours or more, 2.5 hours or more, 3.0 hours or more, or 3.5 hours or more. By setting the lower limit of the above-mentioned time within the above-mentioned range, the semi-cured resin can be sufficiently cured, and the reliability of the obtained laminate and laminate substrate can be further improved.
- the upper limit of the heat treatment time may be, for example, 6.0 hours or less, 5.5 hours or less, 5.0 hours or less, or 4.5 hours or less.
- the semi-cured resin can be cured more reliably while preventing thermal deterioration of the resin.
- the time for the heat treatment may be adjusted within the above-mentioned range, and may be, for example, 2.0 to 6.0 hours, or 2.5 to 5.5 hours.
- the above-described heat treatment of the semi-cured resin-impregnated plate 30 can also be performed by applying pressure to the stacking direction of the metal plate 20, the semi-cured resin-impregnated plate 30, and the conductive plate 50.
- the upper limit of the pressure in this case may be, for example, 20.0 MPa or less, 17.5 MPa or less, 15.0 MPa or less, or 12.5 MPa or less. By setting the upper limit of the pressure within the above range, it is possible to further suppress the occurrence of cracks in the semi-cured resin-impregnated plate and to bond the board with sufficient pressure.
- the lower limit of the pressure may be, for example, 1.0 MPa or more, 2.0 MPa or more, 3.0 MPa or more, or 4.0 MPa or more.
- the adhesive force between the resin filling plate 40, the metal plate 20, and the conductive plate 50 in the resulting laminate can be further improved.
- the pressure may be adjusted within the above-mentioned range, for example, from 1.0 to 20.0 MPa, or from 3.0 to 12.5 MPa.
- the portion 50b of the conductive plate 50 that exists outside the main surface of the semi-cured resin-impregnated plate 30 is on the semi-cured resin-impregnated plate 30 side.
- the semi-cured resin may be melted and cured by placing a buffer material therein.
- the cushioning material may have the same thickness as the total thickness of the semi-cured resin-impregnated plate 30 and the metal plate 20, or a thickness less than that.
- the cushioning material in the present application be one that does not deform when heated or pressurized and does not damage the conductive plate 50, metal circuits, etc., and more preferably one that deforms when pressurized and reduces the pressure difference between the main surface and the protrusion. Any material that can reduce this is fine. For example, metal plates, gasket sheets, etc. can be used.
- a laminate substrate can also be manufactured by forming a wiring pattern on the conductive plate of the laminate manufactured as described above.
- a metal circuit layer 60 is formed by processing a wiring pattern on a conductive plate 50, as shown in FIGS. 1(c) and 2(c).
- the laminated substrate 102 is obtained by forming the metal circuit layer 60.
- the metal circuit layer 60 has one or more conductive parts provided on the resin filling plate 40. At least one of the conductive parts is a first conductive part 52 that includes a substrate part 52a existing on the resin filling plate 40 and a protruding part 52b protruding to the outside of the main surface of the resin filling plate 40 when viewed from above. It becomes.
- the conductive portion may also include a second conductive portion 62 that is also received within the main surface of the resin-filled plate 40 .
- At least a portion of the side surface of the first conductive portion 52 in the laminated substrate 102 is formed by processing the wiring pattern described above, and is inclined with respect to the direction in which the main surface of the resin filling plate 40 extends. It has a surface.
- the inclined surface may be formed over the entire circumference of the side surface of the first conductive portion 52.
- the above-mentioned inclined surface can also be said to be a processed surface formed by processing the above-mentioned wiring pattern.
- the inclination angle ⁇ of the side surface of the first conductive portion 52 is, for example, 85° or less, 84° or less, 83° or less, 82° or less, or 81° or less with respect to the direction in which the main surface of the resin filling plate 40 extends. It may be.
- the inclination angle ⁇ of the side surface of the first conductive portion 52 is, for example, 35° or more, 37° or more, 40° or more, 42° or more, or 45° or more with respect to the direction in which the main surface of the resin filling plate 40 extends. It may be.
- the inclination angle ⁇ of the side surface of the first conductive portion 52 may be adjusted within the above-mentioned range, and may be, for example, 35 to 85 degrees with respect to the direction in which the main surface of the resin filling plate 40 extends.
- the inclination angle can be controlled by adjusting the pattern forming means (processing method and processing conditions).
- the inclination angle ⁇ of the side surface of the first conductive part 52 is determined by acquiring an image of a cross section including the first conductive part 52 as shown in FIG. It means the angle of inclination measured by image analysis for the edge located inside the main surface.
- FIG. 3 shows an example in which the inclined surface is a straight line, if the inclined surface is not a straight line, a tangent line is set that passes through the end where the first conductive part 52 and the resin filling plate 40 touch and touches the inclined surface.
- the angle at which the tangent line rises from the direction in which the main surface of the resin filling plate 40 extends is defined as the above-mentioned inclination angle ⁇ .
- the means for forming the wiring pattern on the conductive plate 50 may be, for example, etching.
- a resist layer having a desired pattern is formed on the surface of the conductive plate 50.
- the resist material for example, a photosensitive resist or the like can be used.
- a resist layer having a desired pattern can be formed by providing an organic layer containing a photosensitive resist material on the conductive plate 50, exposing it to light, and developing it.
- the resist may be a negative resist or a positive resist.
- the portions of the conductive plate 50 where the resist layer is not provided are removed by etching, and then the resist layer is removed to form wiring formed by conductive parts including the first conductive part 52.
- a patterned metal circuit layer 60 can be formed.
- the shape of the wiring pattern is not particularly limited. Further, the wiring pattern may be, for example, a wiring pattern such as a fine pattern, or a so-called solid pattern.
- One embodiment of the laminate includes a metal plate, a resin-filled plate provided on the metal plate, and a conductive plate provided on the resin-filled plate.
- the conductive plate has a substrate portion that is present on the resin-filled plate, and a portion that is present outside the main surface of the resin-filled plate (protruding portion).
- the laminate is useful as an intermediate in preparing a laminate substrate.
- the laminate is an intermediate before the wiring pattern is formed, and the side surfaces of the conductive plates forming the laminate do not have inclined surfaces formed by etching or the like.
- a laminated substrate can also be prepared by forming a wiring pattern on the conductive plates constituting the laminated body.
- the laminated board includes a metal plate, a resin filling plate provided on the metal plate, and one or more conductive parts provided on the resin filling plate.
- at least one of the one or more conductive parts includes a substrate part existing on the resin filling plate and a protruding part protruding to the outside of the main surface of the resin filling plate when viewed from above. , and a side surface of the first conductive part is inclined with respect to the stacking direction.
- the laminated substrate may not have a brazing material layer.
- the resin-filled plate is obtained by curing the semi-cured resin in the semi-cured resin-impregnated plate, and can also be called a cured product of the semi-cured resin-impregnated plate.
- the above-mentioned laminated substrate has excellent insulation properties because it has a resin-filled plate.
- the laminated board according to the present disclosure includes a conductive portion having a protrusion that protrudes to the outside of the main surface of the resin filling plate.
- the above-mentioned protrusion itself can be used for connection with an external circuit. This can reduce power loss in connection with external circuits.
- FIG. 4 is a schematic diagram showing an example of a laminated substrate.
- FIG. 5 is an end view taken along line VV in FIG. 4.
- FIG. 6 is a plan view of the laminated substrate shown in FIG. 4.
- the laminated board 103 includes a metal plate 20, a resin filling plate 40, and a metal circuit layer 60 in this order.
- the metal circuit layer 60 includes a first conductive portion 52 having a portion protruding outward from the main surface of the resin filling plate 40 when viewed from above, and a first conductive portion 52 having a portion extending outward from the main surface of the resin filling plate 40 when viewed from above. and a second conductive part 62 that is formed to fit within.
- the first conductive portion 52 includes a substrate portion 52a existing on the resin filling plate 40 and a protruding portion 52b protruding to the outside of the main surface of the resin filling plate 40 when viewed from above.
- the length L1 of the protruding portion 52b in the first conductive portion 52 may be adjusted depending on the purpose of use of the multilayer substrate. Such adjustment includes, for example, changing the length L 0 of the protruding portion 50b of the conductive plate 50 that exists outside the main surface of the resin-filled plate 40 in the laminate before forming the wiring pattern, and This can be done by, for example, changing the length L 0 of the portion of the conductive plate that exists outside the main surface of the semi-cured resin-impregnated plate.
- the lower limit of the length L1 of the protruding portion 52b may be, for example, 2.0 mm or more, 3.0 mm or more, 4.0 mm or more, or 5.0 mm or more.
- the upper limit of the length L1 of the protruding portion 52b may be, for example, 15.0 mm or less, 13.0 mm or less, 12.0 mm or less, or 10.0 mm or less.
- the length L 1 of the protruding portion 52b may be adjusted within the above-mentioned range, and may be, for example, 2.0 to 15.0 mm, or 3.0 to 13.0 mm.
- the length L 1 of the protruding portion 52b is the length L1 of the resin filling plate 40 and the resin filling plate 40 when the laminated substrates 102 and 103 having the metal plate 20, the resin filling plate 40, and the metal circuit layer 60 are observed from the metal plate 20 side. It means the maximum distance between the end 40E of the metal plate 20 and the end 52E of the protrusion 52b of the first conductive part 52.
- the length L 1 of the protruding portion 52b is the length L 0 of the portion 50b of the conductive plate 50 that exists outside the main surface of the semi-cured resin-impregnated plate 30, as described in the method for manufacturing a laminate according to the present disclosure . It can be measured by the same method.
- the length of the protruding part 52b is measured for each of the first conductive parts 52, and the arithmetic mean value is calculated as the length L1 of the protruding part 52b in the laminated board to be measured. shall be.
- the upper limit of the thickness T of the first conductive portion 52 may be, for example, 1.5 mm or less, 1.0 mm or less, 0.8 mm or less, or 0.6 mm or less. By setting the upper limit of the thickness T of the first conductive portion 52 within the above range, the difference in thermal expansion with the resin filling plate 40 can be suppressed, and a laminated substrate with higher reliability can be manufactured.
- the lower limit of the thickness T of the first conductive portion 52 may be, for example, 0.1 mm or more, 0.3 mm or more, or 0.4 mm or more.
- the thickness T of the first conductive portion 52 may be adjusted within the above-mentioned range, and may be, for example, 0.1 to 1.5 mm.
- the thickness of the first conductive part 52 is measured along the direction perpendicular to the main surface, and if the thickness is not constant, select 10 arbitrary points and measure the thickness, and the average value is the above-mentioned value. It is sufficient if it is within the range of .
- the upper limit of the ratio of the length L 1 of the protruding portion 52b to the thickness T of the first conductive portion 52 may be, for example, 50.0 or less, It may be less than 50.0, 45.0 or less, 40.0 or less, 35.0 or less, or 30.0 or less.
- the lower limit of the above ratio may be, for example, 5.0 or more, 7.5 or more, 10.0 or more, or 12.5 or more.
- the protrusion 52b can be more easily formed, and the desired structure can be manufactured more easily.
- the ratio may be adjusted within the above range, for example, from 5.0 to 50.0.
- the amount of warpage of the first conductive portion 52 in the lamination direction is kept small.
- the upper limit of the amount of warpage which is the amount of deflection of the protruding portion 52b in the direction from the first conductive portion 52 toward the metal plate 20, is, for example, less than 0.50 mm, less than 0.40 mm, less than 0.30 mm, It may be 0.25 mm or less, 0.20 mm or less, 0.18 mm or less, or 0.16 mm or less.
- peeling in each layer of the laminated substrate can be further suppressed, and reliability can be further improved.
- the lower limit of the amount of warpage of the first conductive portion 52 in the stacking direction is not particularly limited, but may be, for example, 0.05 mm or more, 0.08 mm or more, or 0.10 mm or more.
- the amount of warpage of the first conductive portion 52 in the stacking direction may be adjusted within the above-mentioned range, for example, 0.05 mm or more and less than 0.50 mm, 0.05 mm or more and less than 0.30 mm, or 0.05 to 0.25 mm. It may be.
- the amount of warpage which is the amount of deflection of the protrusion 52b of the first conductive part 52 in the direction from the first conductive part 52 toward the metal plate 20, means a value measured by the following method. Specifically, first, a sample is set on the stage of a one-shot 3D shape measuring machine, the position (reference position) of the main surface of the first conductive part 52 is measured, and the same first conductor as the reference position is set. Regarding the portion 52, the position of the main surface of the protruding portion 52b is measured. Thereafter, the difference between the two positions is calculated and used as the amount of deflection F in the direction from the first conductive portion 52 toward the metal plate 20.
- the amount of warpage means the maximum value of the amount of deflection F measured as described above.
- the main surface of the protrusion 52b is located at the end of the protrusion 52b (the point at which the distance from the end of the resin filling plate 40 is maximum).
- the amount of deflection may be measured using either of the principal surfaces of the first conductive portion 52 as a reference.
- FIG. 7 is a schematic diagram regarding measurement of the amount of warpage, which is the amount of deflection.
- FIG. 7 shows an example in which the main surface of the first conductive portion 52 on the side opposite to the resin filling plate 40 side is set as the reference position.
- the one-shot 3D shape measuring machine for example, "VR-3000" (trade name) manufactured by Keyence Corporation can be used.
- the minimum distance between the first conductive part 52 and the conductive part adjacent to the first conductive part 52 can also be adjusted.
- the adjacent conductive part may be the first conductive part or the second conductive part 62.
- the minimum value of the distance between the first conductive part 52 and the conductive part adjacent to the first conductive part 52 is, for example, 2.0 mm or less, 1.8 mm or less, 1.5 mm or less, 1.2 mm or less, or 1. It may be 0 mm or less. When the minimum value is within the above range, it is possible to create a circuit with a more complicated pattern, and a more sophisticated laminated board can be manufactured.
- the minimum value of the distance between the first conductive part 52 and a conductive part adjacent to the first conductive part 52 is, for example, 0.3 mm or more, 0.5 mm or more, 0.7 mm or more, or 0.8 mm or more. good. When the minimum value is within the above range, discharge between circuits can be prevented during insulation measurement.
- the distance between the first conductive part 52 and the conductive part adjacent to the first conductive part 52 may be adjusted so that the minimum value is within the above-mentioned range, and the minimum value is, for example, 0.3 to 2. It may be 0 mm.
- Example 1 [Preparation of sintered nitride plate] 100 parts by mass of orthoboric acid manufactured by Nippon Denko Corporation and 35 parts by mass of acetylene black (trade name: HS100) manufactured by Denka Corporation were mixed using a Henschel mixer. The obtained mixture was filled into a graphite crucible and heated in an arc furnace at 2200° C. in an argon atmosphere for 5 hours to obtain bulk boron carbide (B 4 C). The obtained lumps were coarsely crushed using a jaw crusher to obtain coarse powder. This coarse powder was further pulverized using a ball mill having silicon carbide balls ( ⁇ 10 mm) to obtain a pulverized powder.
- HS100 acetylene black
- the prepared pulverized powder was filled into a boron nitride crucible. Thereafter, it was heated in a nitrogen gas atmosphere at 2000° C. and 0.85 MPa for 10 hours using a resistance heating furnace. In this way, a fired product containing boron carbonitride (B 4 CN 4 ) was obtained.
- a sintering aid was prepared by blending powdered boric acid and calcium carbonate. In preparation, 50.0 parts by mass of calcium carbonate was blended with 100 parts by mass of boric acid. 20 parts by mass of a sintering aid was added to 100 parts by mass of the fired product, and mixed using a Henschel mixer to prepare a powdery mixture.
- amorphous boron nitride manufactured by Denka Corporation, trade name: GP
- a mold release agent slurry consisting of a mixture of 60 parts by weight of terpineol, 30 parts by weight of toluene, and 10 parts by weight of polyisobutyl methacrylate.
- the mixture was dispersed to prepare a slurry.
- a coating film (boron nitride-containing layer) having a thickness of 0.03 mm was formed using the obtained slurry on one main surface of the molded plate using a doctor blade method.
- the molded plates provided with the coating film were laminated together with the coating film interposed between the molded plates.
- the porosity of the obtained boron nitride sintered plate was determined.
- the bulk density [Y (kg/m 3 )] is calculated from the volume and mass of the boron nitride sintered plate, and from this bulk density and the theoretical density of nitride [X (kg/m 3 )], the following It was determined using equation (1).
- the porosity of the boron nitride sintered body was 52% by volume.
- the theoretical density X of the boron nitride sintered plate was 2280 kg/m 3 .
- Porosity (volume %) [1-(Y/X)] x 100 (2)
- thermosetting resin impregnated board In a container, measure 80 parts by mass of the compound having a cyanate group, 20 parts by mass of the compound having a bismaleimide group, and 50 parts by mass of the compound having an epoxy group, and add 100 parts by mass of the above three types of compounds in total. 1 part by mass of a phosphine curing agent and 0.01 part by mass of an imidazole curing agent were added and mixed. Note that since the epoxy resin was in a solid state at room temperature, it was mixed while being heated to about 80°C. The viscosity of the obtained thermosetting resin composition at 100° C. was 10 mPa ⁇ sec.
- thermosetting resin composition After the prepared thermosetting resin composition was heated to 100° C., it was dripped onto the upper main surface of a boron nitride sintered board using a dispenser while maintaining that temperature to impregnate it with the thermosetting resin composition. .
- the amount of the thermosetting resin composition dropped was 1.5 times the total volume of the pores of the boron nitride sintered board. A part of the thermosetting resin composition did not impregnate the boron nitride sintered board and remained on the main surface.
- thermosetting resin composition The following compounds were used to prepare the thermosetting resin composition.
- Phosphine curing agent Tetraphenylphosphonium tetra-p-tolylborate (manufactured by Kagaku Co., Ltd., trade name: TPP-MK)
- Imidazole curing agent 1-(1-cyanomethyl)-2-ethyl-4-methyl-1H-imidazole (manufactured by Shikoku Kasei Kogyo Co., Ltd., product name: 2E4MZ-CN)
- the resin composition remaining on the upper main surface of the boron nitride sintered plate was smoothed using a stainless steel scraper (manufactured by Narubi Co., Ltd.). The excess resin composition was removed to obtain a semi-cured resin-impregnated plate with a smooth main surface.
- the layers were stacked with an offset so that the length L0 of the part existing outside of the layer was 4.0 mm, heated and pressurized for 5 minutes at 150°C and 5 MPa, and further heated at 200°C and atmospheric pressure.
- a laminate was obtained by heating for 2 hours.
- a gasket sheet manufactured by Kitaco Co., Ltd., thickness: 0.8 mm
- the gasket sheet was protected and used by attaching polyimide tape (manufactured by 3M, thickness: 0.05 mm) to both main surfaces.
- the dielectric breakdown voltage in the first conductive portion 52 was evaluated using an ultra-high voltage withstand voltage tester (manufactured by Keizoku Giken Co., Ltd.) and a measurement jig (manufactured by Onishi Denshi Co., Ltd.). Based on the measurement results, adhesiveness was evaluated based on the following criteria. The results are shown in Table 1.
- C Dielectric breakdown voltage was less than 7 kV, or continuity occurred between circuit layers due to creeping discharge.
- the power loss between the conductive parts was measured for the obtained laminated substrate. Referring to FIG. 8, when transmitting power between the two first conductive parts 52, the power loss starts from a point 1 mm from the end of the protrusion in one of the first conductive parts. The magnitude of power loss was determined by measuring the power in a section of the other first conductive part 52 whose end point was 1 mm from the end of the protruding part. Wire bonding was performed between the first conductive parts 52 using copper wire. The evaluation was a relative evaluation with the power loss in Example 1 being 1. Based on the measurement results, power loss was evaluated using the following criteria. The results are shown in Table 1. A: The relative value of power loss is less than 1.0. B: The relative value of power loss is 1.0 or more and less than 1.5. C: The relative value of power loss is 1.5 or more.
- the bonded portion refers to a region where the intensity of reflected waves is 20% to 50% of the intensity of reflected waves of ultrasonic waves when there is an air layer at the interface when measured by an ultrasonic flaw detector.
- Example 2 Example 1 except that the length L0 of the portion of the conductive plate existing outside the main surface of the semi-cured resin-impregnated plate and the thickness T of the first conductive part were changed as shown in Table 1.
- a laminate and a laminate substrate were prepared in the same manner as above.
- the inclination angle of the side surface of the first conductive part in the obtained multilayer substrate was measured in the same manner as in Example 1.
- performance evaluation of the obtained multilayer substrate was performed in the same manner as in Example 1. The results are shown in Table 1.
- Example 3 The heating temperature during the production of the laminate, the length L0 of the portion of the conductive plate that exists outside the main surface of the semi-cured resin-impregnated plate, and the thickness T of the first conductive part are as shown in Table 1.
- a laminate and a laminate substrate were prepared in the same manner as in Example 1 except for the following changes.
- the inclination angle of the side surface of the first conductive part in the obtained multilayer substrate was measured in the same manner as in Example 1.
- performance evaluation of the obtained multilayer substrate was performed in the same manner as in Example 1. The results are shown in Table 1.
- Example 4 Example 1 except that the length L0 of the portion of the conductive plate existing outside the main surface of the semi-cured resin-impregnated plate and the thickness T of the first conductive part were changed as shown in Table 1.
- a laminate and a laminate substrate were prepared in the same manner as above.
- the inclination angle of the side surface of the first conductive part in the obtained multilayer substrate was measured in the same manner as in Example 1.
- performance evaluation of the obtained multilayer substrate was performed in the same manner as in Example 1. The results are shown in Table 1.
- Example 5 A laminate and a laminate substrate were prepared in the same manner as in Example 1, except that no cushioning material was used in manufacturing the laminate.
- the inclination angle of the side surface of the first conductive part in the obtained multilayer substrate was measured in the same manner as in Example 1.
- performance evaluation of the obtained multilayer substrate was performed in the same manner as in Example 1. The results are shown in Table 1.
- Example 1 A sintered silicon nitride plate was used instead of the semi-cured resin-impregnated plate, and the length L0 of the portion of the conductive plate existing outside the main surface of the semi-cured resin-impregnated plate was changed as shown in Table 1.
- a laminate and a A laminated substrate was prepared. The inclination angle of the side surface of the first conductive part in the obtained multilayer substrate was measured in the same manner as in Example 1. Furthermore, performance evaluation of the obtained multilayer substrate was performed in the same manner as in Example 1. The results are shown in Table 1.
- Example 2 Lamination was carried out in the same manner as in Example 1, except that the length L0 of the portion of the conductive plate existing outside the main surface of the semi-cured resin-impregnated plate and the thickness T of the first conductive part were changed. A body and a laminated substrate were prepared. The inclination angle of the side surface of the first conductive part in the obtained multilayer substrate was measured in the same manner as in Example 1. Furthermore, performance evaluation of the obtained multilayer substrate was performed in the same manner as in Example 1. In addition, in the power loss measurement, evaluation was performed after the Cu plate was joined using solder so that a distance of 4.0 mm appeared in the direction outside the main surface of the resin-filled plate. The results are shown in Table 1.
- the obtained laminate can have both excellent insulation properties and suppression of power loss in the circuit. was confirmed. As shown in Example 4, it was confirmed that even when the protrusion was long and the circuit path was long, the power loss was suppressed to a practically sufficient power loss.
- a laminated substrate with excellent adhesiveness between the insulating plate and the metal circuit in which a metal circuit provided on the insulating plate and a protruding portion protruding outward from the main surface of the insulating plate are integrally formed.
- a method for manufacturing in which a metal circuit provided on the insulating plate and a protruding portion protruding outward from the main surface of the insulating plate are integrally formed.
Abstract
One embodiment of the present disclosure provides a method for producing a laminated substrate, the method including: laminating a metal plate, a semicured-resin-impregnated plate, and an electroconductive plate in the stated order; heat-treating the semicured-resin-impregnated plate at a temperature of 200°C or lower to cure the semicured resin, thereby bonding a cured product of the semicured-resin-impregnated plate, the metal plate, and the electroconductive plate to obtain a laminate; and forming a wiring pattern on the electroconductive plate in the laminate. As seen in a top view, the electroconductive plate has a substrate part that is present on the semicured-resin-impregnated plate, and a portion that is present outside of the main surface of the semicured-resin-impregnated plate.
Description
本開示は、積層体、及び積層体の製造方法、並びに、積層基板、及び積層基板の製造方法に関する。
The present disclosure relates to a laminate, a method for manufacturing a laminate, a laminate substrate, and a method for manufacturing a laminate substrate.
パワーデバイス、トランジスタ、サイリスタ、及びＣＰＵ等の部品においては、使用時に発生する熱を効率的に放熱することが求められる。このような要請から、電子部品を実装する対象となる、金属回路を備えるプリント配線板について、プリント配線板を構成する絶縁層部分の高熱伝導化を図ったり、電気絶縁性を有する熱インターフェース材（Thermal Interface Materials）を介してプリント配線板にヒートシンクに取り付けたりすることによって、放熱性の向上が図られている。
Components such as power devices, transistors, thyristors, and CPUs are required to efficiently dissipate heat generated during use. In response to these demands, for printed wiring boards with metal circuits on which electronic components are mounted, efforts are being made to increase the thermal conductivity of the insulating layer portions that make up the printed wiring boards, and thermal interface materials with electrical insulation properties ( Heat dissipation is improved by attaching it to a heat sink on a printed wiring board via thermal interface materials.
上述のような絶縁層には、窒化ケイ素等で構成されるセラミックス板が用いられている。セラミックス板と金属回路との接着には、ろう材が用いられており、接着には比較的高温で加熱する必要がある。そのため、積層する金属板（金属回路パターンの形成前の板）の面積が、セラミックス板の面積よりも大きい場合などには、加熱時に金属板の自重によって金属板に変形が生じ得る。このような変形が生じた場合には、セラミックス板と、金属回路とのはく離、及び接触不良等が発生し得る。そこで、積層する金属板の形状は、セラミックス板の主面の領域内に収まる形状に限定されている。このため、外部回路との接続には、セラミックス板と金属板との接着後に、金属板又は金属回路に対して、別途端子を設ける必要がある。
A ceramic plate made of silicon nitride or the like is used for the above-mentioned insulating layer. A brazing material is used to bond the ceramic plate and the metal circuit, and bonding requires heating at a relatively high temperature. Therefore, if the area of the metal plates to be laminated (the plates before the metal circuit pattern is formed) is larger than the area of the ceramic plate, the metal plates may be deformed by their own weight during heating. If such deformation occurs, peeling and poor contact between the ceramic plate and the metal circuit may occur. Therefore, the shape of the metal plates to be laminated is limited to a shape that fits within the area of the main surface of the ceramic plate. Therefore, for connection to an external circuit, it is necessary to separately provide a terminal on the metal plate or the metal circuit after the ceramic plate and the metal plate are bonded together.
放熱性及び接着性を有する絶縁層としては、セラミックス板に変えて、窒化ホウ素等のセラミックスと半硬化樹脂とで構成される複合体も用いられている。さらに、複合シートとして、多孔性のセラミックス板（例えば、窒化ホウ素焼結板）に対して、半硬化樹脂を含浸させて得られる半硬化樹脂含浸板のような複合シートの利用も検討されている（例えば、特許文献１参照）。また、金属回路と、半硬化樹脂を含浸させた窒化ホウ素焼結板とを有する積層基板において、窒化ホウ素焼結板を構成する一次粒子と金属回路とを直接接触させて、積層基板の熱抵抗を低減し、放熱性を改善することも検討されている（例えば、特許文献２参照）。
Instead of a ceramic plate, a composite made of a ceramic such as boron nitride and a semi-hardened resin is also used as an insulating layer that has heat dissipation and adhesive properties. Furthermore, the use of a composite sheet such as a semi-cured resin-impregnated plate obtained by impregnating a porous ceramic plate (for example, a boron nitride sintered plate) with a semi-cured resin is also being considered. (For example, see Patent Document 1). In addition, in a laminated substrate having a metal circuit and a boron nitride sintered plate impregnated with a semi-hardened resin, the thermal resistance of the laminated substrate is It is also being considered to reduce the heat dissipation and improve heat dissipation (for example, see Patent Document 2).
上述のような複合シートを使用する場合であっても、ろう材を用いて各部材を接着して得られる積層基板の製造方法に準じて、積層する金属板の形状は、セラミックス板の主面の領域内に収まる形状とされている。絶縁層及び金属回路を備える積層基板の製造において、絶縁板と金属板とを接着する際に、絶縁板上に設けられる金属回路と、端子等とを一体形成することができれば、例えば、金属回路と外部端子との接続界面における電力損失等を抑制できる可能性があり、そのような積層基板の製造方法があれば有用である。
Even when using a composite sheet as described above, the shape of the metal plates to be laminated is determined by the shape of the main surface of the ceramic plate, according to the manufacturing method of a laminated board obtained by bonding each member using a brazing material. It is said that the shape fits within the area of . In manufacturing a laminated board including an insulating layer and a metal circuit, if the metal circuit provided on the insulating plate and the terminal etc. can be integrally formed when bonding the insulating plate and the metal plate, for example, the metal circuit It is possible to suppress power loss and the like at the connection interface between the terminal and the external terminal, and it would be useful if there was a method for manufacturing such a laminated board.
本開示は、絶縁板上に設けられた金属回路と上記絶縁板の主面よりも外側に突出した突出部とが一体形成された、絶縁板と金属回路との接着性に優れる積層基板を製造する方法を提供することを目的とする。本開示はまた、絶縁性及び回路における電力損失が低く抑制された積層基板を提供することを目的とする。本開示はまた、上述のような積層基板の製造に好適な積層体及びその製造方法を提供することを目的とする。
The present disclosure manufactures a laminated board that has excellent adhesiveness between the insulating plate and the metal circuit, in which a metal circuit provided on the insulating plate and a protrusion protruding outward from the main surface of the insulating plate are integrally formed. The purpose is to provide a method for Another object of the present disclosure is to provide a multilayer substrate with low insulation properties and low power loss in circuits. Another object of the present disclosure is to provide a laminate suitable for manufacturing a laminate substrate as described above, and a method for manufacturing the same.
本開示は、以下の［１］～［１３］を提供する。
The present disclosure provides the following [1] to [13].
［１］
金属板、半硬化樹脂含浸板、及び導電板をこの順に積層することと、
前記半硬化樹脂含浸板を２００℃以下の温度で加熱処理し半硬化樹脂を硬化させることによって、前記半硬化樹脂含浸板の硬化物と、前記金属板及び前記導電板と、を接着して積層体を得ることと、を有し、
前記導電板は、上面視において、前記半硬化樹脂含浸板上に存在する部分と、前記半硬化樹脂含浸板の主面の外に存在する部分とを有する、積層体の製造方法。
［２］
前記導電板の、前記半硬化樹脂含浸板の主面の外に存在する部分の長さが２．０ｍｍ以上である、［１］に記載の製造方法。
［３］
金属板、半硬化樹脂含浸板、及び導電板をこの順に積層することと、
前記半硬化樹脂含浸板を２００℃以下の温度で加熱処理し半硬化樹脂を硬化させることによって、前記半硬化樹脂含浸板の硬化物と、前記金属板及び前記導電板と、を接着して積層体を得ることと、
前記積層体の前記導電板に配線パターンを形成することと、を有し、
前記導電板は、上面視において、前記半硬化樹脂含浸板上に存在する基板部と、前記半硬化樹脂含浸板の主面の外に存在する部分と、を有する、積層基板の製造方法。
［４］
前記導電板の、前記半硬化樹脂含浸板の主面の外に存在する部分の長さが２．０ｍｍ以上である、［３］に記載の製造方法。
［５］
金属板と、前記金属板上に設けられた樹脂充填板と、前記樹脂充填板上に設けられた１又は２以上の導電部と、を有し、
１又は２以上の前記導電部の少なくとも１つは、上面視において、前記樹脂充填板上に存在する基板部と、前記樹脂充填板の主面の外まで突出した突出部と、を有する第１導電部であり、
前記第１導電部の側面が積層方向に対して傾斜している、積層基板。
［６］
前記突出部の、前記導電部から前記金属板へ向かう方向への変位量である反り量が０．５０ｍｍ未満である、［５］に記載の積層基板。
［７］
前記第１導電部の厚さが１．５ｍｍ以下である、［５］又は［６］に記載の積層基板。
［８］
前記突出部の長さが２．０ｍｍ以上である、［５］～［７］のいずれかに記載の積層基板。
［９］
前記第１導電部の側面の傾斜角は、前記樹脂充填板の主面が伸びる方向に対して３５～８５°である、［５］～［８］のいずれかに記載の積層基板。
［１０］
前記突出部の端部と前記樹脂充填板の端部との距離に対する、前記第１導電部の厚さの比が５０．０より小さい、［５］～［９］のいずれかに記載の積層基板。
［１１］
前記第１導電部と、前記第１導電部と隣接する導電部との距離の最小値が２．０ｍｍ以下である、［５］～［１０］のいずれかに記載の積層基板。
［１２］
金属板と、前記金属板上に設けられた樹脂充填板と、前記樹脂充填板上に設けられた導電板と、を有し、
前記導電板は、上面視において、前記樹脂充填板上に存在する基板部と、前記樹脂充填板の主面の外に存在するはみ出し部分と、を有する、積層体。
［１３］
前記はみだし部分の、前記導電板から前記金属板へ向かう方向へのたわみ量である反り量が０．３０ｍｍ未満である、［１２］に記載の積層体。
［１４］
前記はみ出し部分の長さが２．０ｍｍ以上である、［１２］又は［１３］に記載の積層体。 [1]
Laminating a metal plate, a semi-hardened resin impregnated plate, and a conductive plate in this order,
By heat-treating the semi-cured resin-impregnated plate at a temperature of 200° C. or lower to cure the semi-cured resin, the cured product of the semi-cured resin-impregnated plate, the metal plate, and the conductive plate are bonded and laminated. obtaining a body, and having;
The method for manufacturing a laminate, wherein the conductive plate has a portion existing on the semi-cured resin-impregnated plate and a portion existing outside the main surface of the semi-cured resin-impregnated plate when viewed from above.
[2]
The manufacturing method according to [1], wherein the length of the portion of the conductive plate that exists outside the main surface of the semi-cured resin-impregnated plate is 2.0 mm or more.
[3]
Laminating a metal plate, a semi-hardened resin impregnated plate, and a conductive plate in this order,
By heat-treating the semi-cured resin-impregnated plate at a temperature of 200° C. or lower to cure the semi-cured resin, the cured product of the semi-cured resin-impregnated plate, the metal plate, and the conductive plate are bonded and laminated. getting a body and
forming a wiring pattern on the conductive plate of the laminate;
The method for manufacturing a laminated substrate, wherein the conductive plate has a substrate portion that exists on the semi-cured resin-impregnated plate and a portion that exists outside the main surface of the semi-cured resin-impregnated plate when viewed from above.
[4]
The manufacturing method according to [3], wherein the length of the portion of the conductive plate that exists outside the main surface of the semi-cured resin-impregnated plate is 2.0 mm or more.
[5]
comprising a metal plate, a resin filling plate provided on the metal plate, and one or more conductive parts provided on the resin filling plate,
At least one of the one or more conductive parts includes a substrate part existing on the resin filling plate and a protruding part protruding to the outside of the main surface of the resin filling plate when viewed from above. is a conductive part,
A laminated substrate, wherein a side surface of the first conductive part is inclined with respect to a lamination direction.
[6]
The laminated substrate according to [5], wherein the amount of warpage, which is the amount of displacement of the protruding portion in the direction from the conductive portion toward the metal plate, is less than 0.50 mm.
[7]
The multilayer substrate according to [5] or [6], wherein the first conductive portion has a thickness of 1.5 mm or less.
[8]
The multilayer substrate according to any one of [5] to [7], wherein the protrusion has a length of 2.0 mm or more.
[9]
The laminated substrate according to any one of [5] to [8], wherein the angle of inclination of the side surface of the first conductive part is 35 to 85 degrees with respect to the direction in which the main surface of the resin filling plate extends.
[10]
The laminate according to any one of [5] to [9], wherein the ratio of the thickness of the first conductive part to the distance between the end of the protruding part and the end of the resin filling plate is less than 50.0. substrate.
[11]
The multilayer substrate according to any one of [5] to [10], wherein the minimum distance between the first conductive part and a conductive part adjacent to the first conductive part is 2.0 mm or less.
[12]
comprising a metal plate, a resin filling plate provided on the metal plate, and a conductive plate provided on the resin filling plate,
The conductive plate is a laminate, in which the conductive plate has a substrate portion existing on the resin filling plate and a protruding portion existing outside the main surface of the resin filling plate when viewed from above.
[13]
The laminate according to [12], wherein the amount of warpage of the protruding portion in the direction from the conductive plate toward the metal plate is less than 0.30 mm.
[14]
The laminate according to [12] or [13], wherein the length of the protruding portion is 2.0 mm or more.
金属板、半硬化樹脂含浸板、及び導電板をこの順に積層することと、
前記半硬化樹脂含浸板を２００℃以下の温度で加熱処理し半硬化樹脂を硬化させることによって、前記半硬化樹脂含浸板の硬化物と、前記金属板及び前記導電板と、を接着して積層体を得ることと、を有し、
前記導電板は、上面視において、前記半硬化樹脂含浸板上に存在する部分と、前記半硬化樹脂含浸板の主面の外に存在する部分とを有する、積層体の製造方法。
［２］
前記導電板の、前記半硬化樹脂含浸板の主面の外に存在する部分の長さが２．０ｍｍ以上である、［１］に記載の製造方法。
［３］
金属板、半硬化樹脂含浸板、及び導電板をこの順に積層することと、
前記半硬化樹脂含浸板を２００℃以下の温度で加熱処理し半硬化樹脂を硬化させることによって、前記半硬化樹脂含浸板の硬化物と、前記金属板及び前記導電板と、を接着して積層体を得ることと、
前記積層体の前記導電板に配線パターンを形成することと、を有し、
前記導電板は、上面視において、前記半硬化樹脂含浸板上に存在する基板部と、前記半硬化樹脂含浸板の主面の外に存在する部分と、を有する、積層基板の製造方法。
［４］
前記導電板の、前記半硬化樹脂含浸板の主面の外に存在する部分の長さが２．０ｍｍ以上である、［３］に記載の製造方法。
［５］
金属板と、前記金属板上に設けられた樹脂充填板と、前記樹脂充填板上に設けられた１又は２以上の導電部と、を有し、
１又は２以上の前記導電部の少なくとも１つは、上面視において、前記樹脂充填板上に存在する基板部と、前記樹脂充填板の主面の外まで突出した突出部と、を有する第１導電部であり、
前記第１導電部の側面が積層方向に対して傾斜している、積層基板。
［６］
前記突出部の、前記導電部から前記金属板へ向かう方向への変位量である反り量が０．５０ｍｍ未満である、［５］に記載の積層基板。
［７］
前記第１導電部の厚さが１．５ｍｍ以下である、［５］又は［６］に記載の積層基板。
［８］
前記突出部の長さが２．０ｍｍ以上である、［５］～［７］のいずれかに記載の積層基板。
［９］
前記第１導電部の側面の傾斜角は、前記樹脂充填板の主面が伸びる方向に対して３５～８５°である、［５］～［８］のいずれかに記載の積層基板。
［１０］
前記突出部の端部と前記樹脂充填板の端部との距離に対する、前記第１導電部の厚さの比が５０．０より小さい、［５］～［９］のいずれかに記載の積層基板。
［１１］
前記第１導電部と、前記第１導電部と隣接する導電部との距離の最小値が２．０ｍｍ以下である、［５］～［１０］のいずれかに記載の積層基板。
［１２］
金属板と、前記金属板上に設けられた樹脂充填板と、前記樹脂充填板上に設けられた導電板と、を有し、
前記導電板は、上面視において、前記樹脂充填板上に存在する基板部と、前記樹脂充填板の主面の外に存在するはみ出し部分と、を有する、積層体。
［１３］
前記はみだし部分の、前記導電板から前記金属板へ向かう方向へのたわみ量である反り量が０．３０ｍｍ未満である、［１２］に記載の積層体。
［１４］
前記はみ出し部分の長さが２．０ｍｍ以上である、［１２］又は［１３］に記載の積層体。 [1]
Laminating a metal plate, a semi-hardened resin impregnated plate, and a conductive plate in this order,
By heat-treating the semi-cured resin-impregnated plate at a temperature of 200° C. or lower to cure the semi-cured resin, the cured product of the semi-cured resin-impregnated plate, the metal plate, and the conductive plate are bonded and laminated. obtaining a body, and having;
The method for manufacturing a laminate, wherein the conductive plate has a portion existing on the semi-cured resin-impregnated plate and a portion existing outside the main surface of the semi-cured resin-impregnated plate when viewed from above.
[2]
The manufacturing method according to [1], wherein the length of the portion of the conductive plate that exists outside the main surface of the semi-cured resin-impregnated plate is 2.0 mm or more.
[3]
Laminating a metal plate, a semi-hardened resin impregnated plate, and a conductive plate in this order,
By heat-treating the semi-cured resin-impregnated plate at a temperature of 200° C. or lower to cure the semi-cured resin, the cured product of the semi-cured resin-impregnated plate, the metal plate, and the conductive plate are bonded and laminated. getting a body and
forming a wiring pattern on the conductive plate of the laminate;
The method for manufacturing a laminated substrate, wherein the conductive plate has a substrate portion that exists on the semi-cured resin-impregnated plate and a portion that exists outside the main surface of the semi-cured resin-impregnated plate when viewed from above.
[4]
The manufacturing method according to [3], wherein the length of the portion of the conductive plate that exists outside the main surface of the semi-cured resin-impregnated plate is 2.0 mm or more.
[5]
comprising a metal plate, a resin filling plate provided on the metal plate, and one or more conductive parts provided on the resin filling plate,
At least one of the one or more conductive parts includes a substrate part existing on the resin filling plate and a protruding part protruding to the outside of the main surface of the resin filling plate when viewed from above. is a conductive part,
A laminated substrate, wherein a side surface of the first conductive part is inclined with respect to a lamination direction.
[6]
The laminated substrate according to [5], wherein the amount of warpage, which is the amount of displacement of the protruding portion in the direction from the conductive portion toward the metal plate, is less than 0.50 mm.
[7]
The multilayer substrate according to [5] or [6], wherein the first conductive portion has a thickness of 1.5 mm or less.
[8]
The multilayer substrate according to any one of [5] to [7], wherein the protrusion has a length of 2.0 mm or more.
[9]
The laminated substrate according to any one of [5] to [8], wherein the angle of inclination of the side surface of the first conductive part is 35 to 85 degrees with respect to the direction in which the main surface of the resin filling plate extends.
[10]
The laminate according to any one of [5] to [9], wherein the ratio of the thickness of the first conductive part to the distance between the end of the protruding part and the end of the resin filling plate is less than 50.0. substrate.
[11]
The multilayer substrate according to any one of [5] to [10], wherein the minimum distance between the first conductive part and a conductive part adjacent to the first conductive part is 2.0 mm or less.
[12]
comprising a metal plate, a resin filling plate provided on the metal plate, and a conductive plate provided on the resin filling plate,
The conductive plate is a laminate, in which the conductive plate has a substrate portion existing on the resin filling plate and a protruding portion existing outside the main surface of the resin filling plate when viewed from above.
[13]
The laminate according to [12], wherein the amount of warpage of the protruding portion in the direction from the conductive plate toward the metal plate is less than 0.30 mm.
[14]
The laminate according to [12] or [13], wherein the length of the protruding portion is 2.0 mm or more.
本開示によれば、絶縁板上に設けられた金属回路と上記絶縁板の主面よりも外側に突出した突出部とが一体形成された、絶縁板と金属回路との接着性に優れる積層基板を製造する方法を提供できる。本開示によればまた、絶縁性及び回路における電力損失が低く抑制された積層基板を提供できる。本開示によればまた、上述のような積層基板の製造に好適な積層体及びその製造方法を提供できる。
According to the present disclosure, a laminated substrate with excellent adhesiveness between the insulating plate and the metal circuit, in which a metal circuit provided on the insulating plate and a protruding portion protruding outward from the main surface of the insulating plate are integrally formed. can provide a method for manufacturing. According to the present disclosure, it is also possible to provide a multilayer substrate with low insulation properties and low power loss in circuits. According to the present disclosure, it is also possible to provide a laminate suitable for manufacturing a laminate substrate as described above and a method for manufacturing the same.
以下、場合によって図面を参照して、本開示の実施形態を説明する。ただし、以下の実施形態は、本開示を説明するための例示であり、本開示を以下の内容に限定する趣旨ではない。説明において、同一要素又は同一機能を有する要素には同一符号を用い、場合によって重複する説明は省略する。また、上下左右等の位置関係は、特に断らない限り、図面に示す位置関係に基づくものとする。さらに、各要素の寸法比率は図示の比率に限られるものではない。
Hereinafter, embodiments of the present disclosure will be described with reference to the drawings as the case may be. However, the following embodiments are examples for explaining the present disclosure, and are not intended to limit the present disclosure to the following contents. In the description, the same reference numerals will be used for the same elements or elements having the same function, and redundant description will be omitted in some cases. In addition, the positional relationships such as top, bottom, left, and right are based on the positional relationships shown in the drawings unless otherwise specified. Furthermore, the dimensional ratio of each element is not limited to the ratio shown in the drawings.
本明細書において例示する材料は特に断らない限り、１種を単独で又は２種以上を組み合わせて用いることができる。組成物中の各成分の含有量は、組成物中の各成分に該当する物質が複数存在する場合には、特に断らない限り、組成物中に存在する当該複数の物質の合計量を意味する。
Unless otherwise specified, the materials exemplified in this specification can be used alone or in combination of two or more. If there are multiple substances corresponding to each component in the composition, the content of each component in the composition means the total amount of the multiple substances present in the composition, unless otherwise specified. .
本開示に係る積層体は、本開示に係る積層基板を製造するために好適に使用できる。また、本開示に係る積層基板は、例えば、プリント配線板等として用いられてもよい。
The laminate according to the present disclosure can be suitably used to manufacture the laminate substrate according to the present disclosure. Further, the multilayer substrate according to the present disclosure may be used as, for example, a printed wiring board.
積層体の製造方法の一実施形態は、金属板、半硬化樹脂含浸板、及び導電板をこの順に積層することと、上記半硬化樹脂含浸板を２００℃以下の温度で加熱処理し半硬化樹脂を硬化させることによって、上記半硬化樹脂含浸板の硬化物と、上記金属板及び上記導電板と、を接着して積層体を得ることと、を有する。上記製造方法において、上記導電板は、上面視において、上記半硬化樹脂含浸板上に存在する部分と、上記半硬化樹脂含浸板の主面の外に存在する部分とを有する。上記積層体に対する配線パターン加工によって積層基板を製造することもできる。すなわち積層基板の製造方法の一実施形態は、上記積層体の上記導電板に配線パターンを形成することを更に有する。まず、積層体の製造方法について説明する。
One embodiment of the method for producing a laminate includes laminating a metal plate, a semi-cured resin-impregnated plate, and a conductive plate in this order, and heat-treating the semi-cured resin-impregnated plate at a temperature of 200°C or less to form a semi-cured resin. and bonding the cured product of the semi-cured resin-impregnated plate with the metal plate and the conductive plate to obtain a laminate. In the above manufacturing method, the conductive plate has a portion existing on the semi-cured resin impregnated plate and a portion existing outside the main surface of the semi-cured resin impregnated plate when viewed from above. A laminated substrate can also be manufactured by processing a wiring pattern on the laminated body. That is, one embodiment of the method for manufacturing a laminated board further includes forming a wiring pattern on the conductive plate of the laminated body. First, a method for manufacturing a laminate will be explained.
上記積層体の製造方法では、上面視において、導電板を、その一部が半硬化樹脂含浸板の主面の外に出るように積層しており、さらに半硬化樹脂含浸板を用いることによって、従前のはんだ接続に比べて低温での積層体の製造が可能となっている。このような構成を採用することによって、絶縁板上に設けられた金属回路と、上記絶縁板の主面よりも外側に突出した突出部とが一体形成された積層基板を製造可能な積層体を得ることができる。また、比較的低温での接続によって、半硬化樹脂含浸板の主面の外側に突出する部分を有していても導電板の熱による変形が抑制され、得られる積層体における導電板の湾曲等を抑制することができる。
In the above method for manufacturing a laminate, the conductive plates are laminated so that a part of the conductive plates protrudes outside the main surface of the semi-cured resin-impregnated plate when viewed from above, and further, by using the semi-cured resin-impregnated plate, Compared to conventional solder connections, it is now possible to manufacture laminates at lower temperatures. By adopting such a configuration, it is possible to manufacture a laminate board in which a metal circuit provided on an insulating plate and a protrusion protruding outward from the main surface of the insulating plate are integrally formed. Obtainable. In addition, by connecting at a relatively low temperature, deformation of the conductive plate due to heat is suppressed even if the semi-cured resin-impregnated plate has a portion protruding outside the main surface, and curvature of the conductive plate in the resulting laminate is suppressed. can be suppressed.
図１及び図２は、積層体及び積層基板の製造方法の一例を説明するための模式図である。図２の（ａ）、（ｂ）及び（ｃ）は、それぞれ、図１の（ａ）、（ｂ）及び（ｃ）に対応する断面が模式的に示されている。図１の（ａ）は、中間体１００を用意する工程を示す。図１の（ａ）に記載の中間体１００は、金属板２０、及び金属板２０上に積層された半硬化樹脂含浸板３０を有する積層物と、上記積層物の半硬化樹脂含浸板３０側に、さらに積層された導電板５０とを有する。図１の（ｂ）は、積層体１０１を調製する工程を示す。図１の（ｂ）に記載の積層体１０１は、上記中間体１００を加熱処理し、半硬化樹脂含浸板３０を構成する半硬化樹脂を溶融し、更に硬化させることによって、調製され、金属板２０、半硬化樹脂含浸板３０の硬化物（樹脂充填板４０）及び導電板５０をこの順に備える。
FIGS. 1 and 2 are schematic diagrams for explaining an example of a method for manufacturing a laminate and a laminate substrate. (a), (b), and (c) of FIG. 2 schematically show cross sections corresponding to (a), (b), and (c) of FIG. 1, respectively. FIG. 1(a) shows a step of preparing an intermediate 100. The intermediate body 100 shown in FIG. 1(a) includes a laminate having a metal plate 20, a semi-cured resin-impregnated plate 30 laminated on the metal plate 20, and a side of the semi-cured resin-impregnated plate 30 of the laminate. The conductive plate 50 further includes a laminated conductive plate 50. FIG. 1(b) shows the process of preparing the laminate 101. The laminate 101 shown in FIG. 1(b) is prepared by heat-treating the intermediate body 100, melting the semi-cured resin constituting the semi-cured resin-impregnated plate 30, and further curing the metal plate. 20, a cured product of the semi-cured resin-impregnated plate 30 (resin-filled plate 40) and a conductive plate 50 are provided in this order.
金属板２０は、板状の形状を有する金属製のものであれば特に制限なく使用できる。金属板２０の材質は、例えば、アルミニウム、及び銅などが挙げられる。金属板２０の材質は、半硬化樹脂との濡れ性をより向上させる観点から、好ましくは銅を含む。金属板２０は、銅板であってよい。
The metal plate 20 can be used without particular limitation as long as it is made of metal and has a plate-like shape. Examples of the material of the metal plate 20 include aluminum and copper. The material of the metal plate 20 preferably contains copper from the viewpoint of further improving wettability with the semi-cured resin. The metal plate 20 may be a copper plate.
金属板２０の主面の形状は、半硬化樹脂含浸板３０の主面の形状と同一である。
The shape of the main surface of the metal plate 20 is the same as the shape of the main surface of the semi-cured resin impregnated plate 30.
金属板２０の厚さは、例えば、０．１～３．０ｍｍ、０．２～２．５ｍｍ、又は０．３～２．０ｍｍであってよい。金属板２０の厚さの下限値が上記範囲内であることで、積層体を製造する際の金属板２０の変形を抑えることができ、またハンドリング時にも変形を防ぐことができる。金属板２０の厚さの上限値が上記範囲内であることで、積層体全体の放熱性を十分に確保しながら小型な積層体を製造することが可能となる。
The thickness of the metal plate 20 may be, for example, 0.1 to 3.0 mm, 0.2 to 2.5 mm, or 0.3 to 2.0 mm. By setting the lower limit of the thickness of the metal plate 20 within the above range, deformation of the metal plate 20 during manufacturing the laminate can be suppressed, and deformation can also be prevented during handling. By setting the upper limit of the thickness of the metal plate 20 within the above range, it is possible to manufacture a compact laminate while ensuring sufficient heat dissipation of the entire laminate.
半硬化樹脂含浸板３０は、半硬化樹脂で構成される半硬化樹脂部を含む。半硬化樹脂は、主剤及び硬化剤を含む樹脂組成物の半硬化物（Ｂステージ）であってよい。半硬化物は、樹脂組成物の硬化反応が一部進行したものである。半硬化物は、その後の硬化処理によって、更に硬化させることができる。なお、上述の樹脂組成物の硬化物（Ｃステージ）は、樹脂組成物の硬化反応が十分に進行したものを意味し、完全に硬化した状態を含む。
The semi-cured resin impregnated plate 30 includes a semi-cured resin portion made of semi-cured resin. The semi-cured resin may be a semi-cured product (B stage) of a resin composition containing a base resin and a curing agent. The semi-cured product is one in which the curing reaction of the resin composition has partially progressed. The semi-cured material can be further cured by a subsequent curing treatment. Note that the above-mentioned cured product (C stage) of the resin composition means a resin composition in which the curing reaction has sufficiently progressed, and includes a completely cured state.
半硬化樹脂は、樹脂組成物中の主剤及び硬化剤が反応して生成する熱硬化性樹脂等を含んでもよい。上記半硬化物は、樹脂成分として、熱硬化性樹脂に加えて、未反応の主剤及び硬化剤等を含んでもよい。半硬化樹脂含浸板３０に含まれる半硬化樹脂部が、硬化物（Ｃステージ）となる前の半硬化物（Ｂステージ）であることは、例えば、示差走査熱量計によって確認することができる。
The semi-cured resin may include a thermosetting resin produced by the reaction of the main resin and the curing agent in the resin composition. In addition to the thermosetting resin, the semi-cured material may contain an unreacted main ingredient, a curing agent, and the like as a resin component. It can be confirmed by, for example, a differential scanning calorimeter that the semi-cured resin portion included in the semi-cured resin-impregnated plate 30 is a semi-cured product (B stage) before becoming a cured product (C stage).
半硬化樹脂含浸板３０に含まれる半硬化樹脂の硬化率の上限値は、例えば、５０％以下、４８％以下、４６％以下、又は４２％以下であってよい。半硬化樹脂の硬化率の上限値が上記範囲内であることで、金属板２０及び導電板５０との接着時において、半硬化樹脂が適度に溶融し、接着界面に溶融樹脂をより十分に行き渡らせることができ、より優れた接着性を発揮し得る。半硬化樹脂含浸板３０に含まれる半硬化樹脂の硬化率の下限値は、例えば、２０％以上、２３％以上、又は２５％以上であってよい。半硬化樹脂の硬化率の下限値が上記範囲内であることで、半硬化樹脂含浸板３０と金属板２０及び導電板５０とを加熱し接着させる際に、半硬化樹脂含浸板３０から溶融した半硬化樹脂が過度に流れ出すことを抑制し、半硬化樹脂含浸板の接着性と、得られる積層基板における絶縁性とをより高水準で両立できる。半硬化樹脂の硬化率は上述の範囲内で調整してよく、例えば、２０～５０％であってよい。
The upper limit of the curing rate of the semi-cured resin contained in the semi-cured resin-impregnated plate 30 may be, for example, 50% or less, 48% or less, 46% or less, or 42% or less. By setting the upper limit of the curing rate of the semi-cured resin within the above range, the semi-cured resin can be melted appropriately when bonding the metal plate 20 and the conductive plate 50, and the molten resin can be more fully spread over the bonding interface. It can be used to improve adhesion. The lower limit of the curing rate of the semi-cured resin contained in the semi-cured resin-impregnated plate 30 may be, for example, 20% or more, 23% or more, or 25% or more. By setting the lower limit of the curing rate of the semi-cured resin within the above range, when heating and bonding the semi-cured resin-impregnated plate 30, the metal plate 20, and the conductive plate 50, the melt from the semi-cured resin-impregnated plate 30 is Excessive flow of the semi-cured resin is suppressed, and a higher level of both the adhesion of the semi-cured resin-impregnated board and the insulation of the resulting laminated substrate can be achieved. The curing rate of the semi-cured resin may be adjusted within the above-mentioned range, and may be, for example, 20 to 50%.
半硬化樹脂の硬化率は、示差走査熱量計を用いた測定によって決定することができる。まず、未硬化の状態の樹脂組成物２ｍｇを完全に硬化させた際に生じる単位質量当たりの発熱量Ｑを測定する。そして、半硬化樹脂含浸板３０から半硬化樹脂のサンプル１０ｍｇを同様に昇温させて、完全に硬化させた際に生じる単位質量当たりの発熱量Ｒを求める。また、測定対象とした半硬化樹脂含浸板３０の断面ＳＥＭ画像解析及び熱重量示差熱分析（ＴＧ－ＤＴＡ）によって半硬化樹脂の含有量ｃ（質量％）を決定し、決定された半硬化樹脂の含有量及び上述の測定によって得られた発熱量Ｒから半硬化樹脂の発熱量が算出する。そして、下記式（１）によって半硬化樹脂含浸板３０に含浸している半硬化樹脂の硬化率が求められる。なお、半硬化樹脂が完全に硬化したか否かは、示差走査熱量測定によって得られる発熱曲線において、発熱が終了することで確認することができる。
半硬化樹脂の硬化率（％）＝｛１－[（Ｒ／ｃ）×１００]／Ｑ｝×１００ …式（１） The curing rate of the semi-cured resin can be determined by measurement using a differential scanning calorimeter. First, the calorific value Q per unit mass generated when 2 mg of the uncured resin composition is completely cured is measured. Then, the temperature of 10 mg of the semi-cured resin sample from the semi-cured resin-impregnatedplate 30 is raised in the same manner, and the calorific value R generated per unit mass when completely cured is determined. In addition, the semi-cured resin content c (mass%) was determined by cross-sectional SEM image analysis and thermogravimetric differential thermal analysis (TG-DTA) of the semi-cured resin-impregnated plate 30 that was the measurement target, and the determined semi-cured resin The calorific value of the semi-cured resin is calculated from the content of and the calorific value R obtained by the above measurement. Then, the curing rate of the semi-cured resin impregnated into the semi-cured resin-impregnated plate 30 is determined by the following formula (1). Note that whether or not the semi-cured resin is completely cured can be confirmed by the completion of heat generation in the heat generation curve obtained by differential scanning calorimetry.
Curing rate (%) of semi-cured resin = {1-[(R/c)×100]/Q}×100...Formula (1)
半硬化樹脂の硬化率（％）＝｛１－[（Ｒ／ｃ）×１００]／Ｑ｝×１００ …式（１） The curing rate of the semi-cured resin can be determined by measurement using a differential scanning calorimeter. First, the calorific value Q per unit mass generated when 2 mg of the uncured resin composition is completely cured is measured. Then, the temperature of 10 mg of the semi-cured resin sample from the semi-cured resin-impregnated
Curing rate (%) of semi-cured resin = {1-[(R/c)×100]/Q}×100...Formula (1)
半硬化樹脂は、例えば、エポキシ樹脂、シアネート樹脂、フェノール樹脂、メラミン樹脂、ユリア樹脂、ビスマレイミド樹脂、熱硬化性ポリイミド、マレイミド樹脂、マレイミド変性樹脂、シリコーン樹脂、シリコーンゴム、不飽和ポリエステル、ポリウレタン、及びアルキド樹脂からなる群より選ばれる少なくとも一種を含んでいてよい。
Semi-cured resins include, for example, epoxy resins, cyanate resins, phenolic resins, melamine resins, urea resins, bismaleimide resins, thermosetting polyimides, maleimide resins, maleimide-modified resins, silicone resins, silicone rubber, unsaturated polyesters, polyurethanes, and alkyd resin.
半硬化樹脂含浸板３０は、例えば、多孔質の窒化物焼結板と、窒化物焼結板の細孔に充填された半硬化樹脂（半硬化樹脂部）とを有してよい。
The semi-cured resin-impregnated plate 30 may include, for example, a porous sintered nitride plate and a semi-cured resin (semi-cured resin portion) filled in the pores of the sintered nitride plate.
窒化物焼結体は、窒化物の一次粒子同士が焼結して構成される窒化物粒子と細孔とを有する。窒化物は、例えば、窒化ホウ素、窒化アルミニウム、及び窒化ケイ素からなる群から選択される少なくとも一種の窒化物を含有してよい。窒化物焼結板としては、例えば、窒化ホウ素焼結板、窒化アルミニウム焼結板、及び窒化ケイ素焼結板等が挙げられる。窒化物焼結板は、樹脂充填のための細孔形成がより容易であり、長期信頼性のための弾性率等にも優れることから、好ましくは、窒化ホウ素焼結板である。
The nitride sintered body has nitride particles and pores formed by sintering primary nitride particles. The nitride may contain, for example, at least one type of nitride selected from the group consisting of boron nitride, aluminum nitride, and silicon nitride. Examples of the nitride sintered board include a boron nitride sintered board, an aluminum nitride sintered board, and a silicon nitride sintered board. The nitride sintered board is preferably a boron nitride sintered board because it is easier to form pores for resin filling and has excellent elastic modulus for long-term reliability.
窒化物焼結板の細孔のメジアン細孔径の上限値は、例えば、４．０μｍ以下、３．８μｍ以下、３．６μｍ以下、３．４μｍ以下、３．２μｍ以下、又は３．０μｍ以下であってよい。このような窒化物焼結板は細孔のサイズが小さいことから、窒化物粒子の粒子同士の接触面積を十分に大きなものとなり、熱伝導率を高くすることができる。窒化物焼結板の細孔のメジアン細孔径の下限値は、例えば、１．５μｍ以上、１．６μｍ以上、１．７μｍ以上、１．８μｍ以上、１．９μｍ以上、又は２．０μｍ以上であってよい。メジアン細孔径の下限値が上記範囲内であることで、半硬化樹脂をより容易に浸透させることができ、積層体製造時の溶融樹脂量をより十分なものとすることができる。窒化物焼結板の細孔のメジアン細孔径は上述の範囲内で調整してよく、例えば、１．５～４．０μｍ、又は２．０～３．０μｍであってよい。
The upper limit of the median pore diameter of the pores of the nitride sintered plate is, for example, 4.0 μm or less, 3.8 μm or less, 3.6 μm or less, 3.4 μm or less, 3.2 μm or less, or 3.0 μm or less. It's good. Since such a nitride sintered plate has small pore sizes, the contact area between the nitride particles becomes sufficiently large, and the thermal conductivity can be increased. The lower limit of the median pore diameter of the sintered nitride plate is, for example, 1.5 μm or more, 1.6 μm or more, 1.7 μm or more, 1.8 μm or more, 1.9 μm or more, or 2.0 μm or more. It's good. When the lower limit of the median pore diameter is within the above range, the semi-cured resin can be more easily penetrated, and the amount of molten resin can be made more sufficient during the production of the laminate. The median pore diameter of the pores of the sintered nitride plate may be adjusted within the above-mentioned range, for example, from 1.5 to 4.0 μm, or from 2.0 to 3.0 μm.
窒化物焼結板の細孔のメジアン細孔径は、以下の手順で測定することができる。まず、測定対象となる半硬化樹脂含浸板又は樹脂充填板を加熱して半硬化樹脂及び樹脂（硬化樹脂）を除去する。そして、水銀ポロシメーターを用い、０．００４２ＭＰａから２０６．８ＭＰａまで圧力を増やしながら、窒化物焼結板を加圧したときの細孔径分布を求める。横軸を細孔径、縦軸を累積細孔容積としたときに、累積細孔容積が全細孔容積の５０％に達するときの細孔径がメジアン細孔径である。水銀ポロシメーターとしては、例えば、株式会社島津製作所製のものを用いることができる。
The median pore diameter of the pores of the nitride sintered plate can be measured using the following procedure. First, the semi-cured resin-impregnated plate or resin-filled plate to be measured is heated to remove the semi-cured resin and resin (cured resin). Then, using a mercury porosimeter, the pore size distribution is determined when the nitride sintered plate is pressurized while increasing the pressure from 0.0042 MPa to 206.8 MPa. When the horizontal axis is the pore diameter and the vertical axis is the cumulative pore volume, the pore diameter when the cumulative pore volume reaches 50% of the total pore volume is the median pore diameter. As the mercury porosimeter, for example, one manufactured by Shimadzu Corporation can be used.
窒化物焼結板の細孔率、すなわち、窒化物焼結板における細孔の体積の比率の上限値は、例えば、６５体積％以下、６０体積％以下、又は５８体積％以下であってよい。窒化物焼結板の細孔率の上限値が上記範囲内であることで、窒化物焼結板の機械強度の低下をより十分に抑制し、より取扱い性に優れた半硬化樹脂含浸板を提供できる。窒化物焼結板の細孔率の下限値は、例えば、４０体積％以上、４２体積％以上、４４体積％以上、又は４５体積％以上であってよい。窒化物焼結体の細孔率の上限値が上記範囲内であることで、半硬化樹脂の含有量を向上させ、金属板及び導電板との接着性をより向上させることができる。窒化物焼結板の細孔率は上述の範囲内で調整してよく、例えば、４０～６５体積％、又は４０～６０体積％であってよい。
The porosity of the nitride sintered board, that is, the upper limit of the volume ratio of pores in the nitride sintered board may be, for example, 65 volume% or less, 60 volume% or less, or 58 volume% or less. . By having the upper limit of the porosity of the nitride sintered board within the above range, the decrease in mechanical strength of the nitride sintered board can be more fully suppressed, and a semi-cured resin-impregnated board with better handling properties can be obtained. Can be provided. The lower limit of the porosity of the nitride sintered plate may be, for example, 40 volume % or more, 42 volume % or more, 44 volume % or more, or 45 volume % or more. When the upper limit of the porosity of the nitride sintered body is within the above range, the content of the semi-cured resin can be improved, and the adhesiveness with the metal plate and the conductive plate can be further improved. The porosity of the sintered nitride plate may be adjusted within the above-mentioned range, for example, 40-65% by volume, or 40-60% by volume.
窒化物焼結板の細孔率は、窒化物焼結板の体積及び質量から、かさ密度［Ｙ（ｋｇ／ｍ３）］を算出し、このかさ密度と窒化物の理論密度［Ｘ（ｋｇ／ｍ３）］とから、下記式（２）によって求めることができる。窒化物焼結板は、窒化ホウ素、窒化アルミニウム、及び窒化ケイ素からなる群から選択される少なくとも一種を含んでよい。窒化ホウ素の場合、理論密度Ｘは２２８０ｋｇ／ｍ３である。窒化アルミニウムの場合、理論密度Ｘは３２６０ｋｇ／ｍ３である。窒化ケイ素の場合、理論密度Ｘは３１７０ｋｇ／ｍ３である。
細孔率（体積％）＝［１－（Ｙ／Ｘ）］×１００ …式（２） The porosity of the nitride sintered plate is determined by calculating the bulk density [Y (kg/m 3 )] from the volume and mass of the nitride sintered plate, and then calculating the bulk density and the theoretical density of the nitride [X (kg/m 3 )]. /m 3 )] by the following formula (2). The sintered nitride plate may contain at least one selected from the group consisting of boron nitride, aluminum nitride, and silicon nitride. In the case of boron nitride, the theoretical density X is 2280 kg/m 3 . In the case of aluminum nitride, the theoretical density X is 3260 kg/m 3 . In the case of silicon nitride, the theoretical density X is 3170 kg/m 3 .
Porosity (volume %) = [1-(Y/X)] x 100...Formula (2)
細孔率（体積％）＝［１－（Ｙ／Ｘ）］×１００ …式（２） The porosity of the nitride sintered plate is determined by calculating the bulk density [Y (kg/m 3 )] from the volume and mass of the nitride sintered plate, and then calculating the bulk density and the theoretical density of the nitride [X (kg/m 3 )]. /m 3 )] by the following formula (2). The sintered nitride plate may contain at least one selected from the group consisting of boron nitride, aluminum nitride, and silicon nitride. In the case of boron nitride, the theoretical density X is 2280 kg/m 3 . In the case of aluminum nitride, the theoretical density X is 3260 kg/m 3 . In the case of silicon nitride, the theoretical density X is 3170 kg/m 3 .
Porosity (volume %) = [1-(Y/X)] x 100...Formula (2)
窒化物焼結板の厚さは、例えば、５．０ｍｍ以下、３．０ｍｍ以下、又は２．０ｍｍ以下であってもよい。窒化物焼結板の厚さの下限は、例えば、０．１ｍｍ以上、０．３ｍｍ以上、又は０．５ｍｍ以上であってよい。窒化物焼結板の厚さは上述の範囲内で調整してよく、例えば、０．１～５．０ｍｍ、０．１～２．０ｍｍ、又は０．３～２．０ｍｍであってよい。窒化物焼結板の厚さは、主面に直交する方向に沿って測定され、厚さが一定ではない場合、任意の１０箇所を選択して厚さの測定を行い、その平均値が上述の範囲であればよい。なお、半硬化樹脂含浸板の厚さ、及び樹脂充填板の厚さは、窒化物焼結板の厚さに相当する。
The thickness of the sintered nitride plate may be, for example, 5.0 mm or less, 3.0 mm or less, or 2.0 mm or less. The lower limit of the thickness of the nitride sintered plate may be, for example, 0.1 mm or more, 0.3 mm or more, or 0.5 mm or more. The thickness of the sintered nitride plate may be adjusted within the above-mentioned range, and may be, for example, 0.1-5.0 mm, 0.1-2.0 mm, or 0.3-2.0 mm. The thickness of the nitride sintered plate is measured along the direction perpendicular to the main surface, and if the thickness is not constant, select 10 arbitrary points and measure the thickness, and the average value is the above value. It is sufficient if it is within the range of . Note that the thickness of the semi-cured resin-impregnated board and the thickness of the resin-filled board correspond to the thickness of the nitride sintered board.
半硬化樹脂含浸板３０の主面のサイズは特に限定はなく、例えば、５０ｍｍ２以上、２００ｍｍ２以上、５００ｍｍ２以上、８００ｍｍ２以上、又は１０００ｍｍ２以上であってもよい。半硬化樹脂含浸板３０の主面のサイズは、例えば、２５００００ｍｍ２以下、又は１５００００ｍｍ２以下であってよい。半硬化樹脂含浸板３０の主面のサイズは上述の範囲内で調整してよく、例えば、５０～２５００００ｍｍ２、又は２００～１５００００ｍｍ２であってよい。半硬化樹脂含浸板３０の一対の主面のサイズは、一般に同一であるが、完全に一致している必要はなく、互いに異なっていてもよい。
The size of the main surface of the semi-cured resin-impregnated plate 30 is not particularly limited, and may be, for example, 50 mm 2 or more, 200 mm 2 or more, 500 mm 2 or more, 800 mm 2 or more, or 1000 mm 2 or more. The size of the main surface of the semi-cured resin-impregnated plate 30 may be, for example, 250,000 mm 2 or less, or 150,000 mm 2 or less. The size of the main surface of the semi-cured resin-impregnated plate 30 may be adjusted within the above-mentioned range, and may be, for example, 50 to 250,000 mm 2 or 200 to 150,000 mm 2 . The sizes of the pair of main surfaces of the semi-cured resin-impregnated plate 30 are generally the same, but do not need to be completely the same and may be different from each other.
図１において、半硬化樹脂含浸板３０の主面の形状は四角形で示した。しかし、半硬化樹脂含浸板３０の主面の形状は、これに限定されるものではなく、例えば、四角形以外の多角形であってもよい。
In FIG. 1, the shape of the main surface of the semi-cured resin-impregnated plate 30 is shown as a square. However, the shape of the main surface of the semi-cured resin-impregnated plate 30 is not limited to this, and may be, for example, a polygon other than a quadrangle.
導電板５０は、後に金属回路層６０となる部材であり、導電体で構成される。導電板５０の材質は、金属板２０と同一であっても、異なっていてもよい。導電板５０の材質は、例えば、アルミニウム、及び銅などが挙げられる。
The conductive plate 50 is a member that will later become the metal circuit layer 60, and is made of a conductor. The material of the conductive plate 50 may be the same as or different from that of the metal plate 20. Examples of the material of the conductive plate 50 include aluminum and copper.
図１において、導電板５０の主面の形状は四角形で示した。しかし、導電板５０の主面の形状は、これに限定されるものではなく、例えば、四角形以外の多角形であってもよいし、円形であってもよく、一部を切り欠いた形状であってもよい。
In FIG. 1, the shape of the main surface of the conductive plate 50 is shown as a square. However, the shape of the main surface of the conductive plate 50 is not limited to this, and may be, for example, a polygon other than a quadrangle, a circle, or a shape with a part cut out. There may be.
導電板５０の厚さの上限値は、例えば、１．５ｍｍ以下、１．０ｍｍ以下、０．８ｍｍ以下、又は０．６ｍｍ以下であってもよい。導電板５０の厚さの下限値は、例えば、０．１ｍｍ以上、０．３ｍｍ以上、又は０．４ｍｍ以上であってよい。導電板５０の厚さは上述の範囲内で調整してよく、例えば、０．１～１．５ｍｍ、又は０．３～１．０ｍｍであってよい。導電板５０の厚さは、主面に直交する方向に沿って測定され、厚さが一定ではない場合、任意の１０箇所を選択して厚さの測定を行い、その平均値が上述の範囲であればよい。
The upper limit of the thickness of the conductive plate 50 may be, for example, 1.5 mm or less, 1.0 mm or less, 0.8 mm or less, or 0.6 mm or less. The lower limit of the thickness of the conductive plate 50 may be, for example, 0.1 mm or more, 0.3 mm or more, or 0.4 mm or more. The thickness of the conductive plate 50 may be adjusted within the above-mentioned range, and may be, for example, 0.1 to 1.5 mm, or 0.3 to 1.0 mm. The thickness of the conductive plate 50 is measured along the direction perpendicular to the main surface, and if the thickness is not constant, select 10 arbitrary points and measure the thickness, and the average value falls within the above range. That's fine.
従前は、導電板５０に相当する部材をセラミックス板上に積層する際に、上記部材の変形を回避する観点から、セラミックス板の主面から外に上記部材がはみ出るように積層することは行われていない。これに対して、本開示に係る積層体の製造方法では、導電板５０の積層位置の自由度が大きなものとなっている。導電板５０は、上面視において、半硬化樹脂含浸板上に存在する部分５０ａと、上記半硬化樹脂含浸板３０の主面の外に存在する部分５０ｂとを有するように配置できる。
Previously, when laminating a member corresponding to the conductive plate 50 on a ceramic plate, from the viewpoint of avoiding deformation of the member, it was not done so that the member protruded from the main surface of the ceramic plate. Not yet. In contrast, in the method for manufacturing a laminate according to the present disclosure, the degree of freedom in the stacking position of the conductive plates 50 is large. The conductive plate 50 can be arranged so as to have a portion 50a existing on the semi-cured resin impregnated plate and a portion 50b existing outside the main surface of the semi-cured resin impregnated plate 30 when viewed from above.
本開示に係る製造方法では、上面視における導電板５０の、半硬化樹脂含浸板３０の主面の外に存在する部分５０ｂの長さＬ０を、積層体及び積層基板の使用目的等に応じて調整することができる。上記部分５０ｂの長さＬ０の下限値は、例えば、２．０ｍｍ以上、３．０ｍｍ以上、４．０ｍｍ以上、又は５．０ｍｍ以上であってよい。上記長さＬ０の下限値を上記範囲内とすることによって、得られる積層基板の有する導電部の突出部の設計の自由度をより大きくすることが可能であり、例えば、上記突出部を外部装置との接続端子とすることができる。上記長さＬ０の上限値は、例えば、１５．０ｍｍ以下、１３．０ｍｍ以下、１２．０ｍｍ以下、又は１０．０ｍｍ以下であってよい。上記長さＬ０の上限値を上記範囲内とすることで、導電板５０及び金属回路層６０における反りの発生をより抑制することができる。上記部分５０ｂの長さＬ０は上述の範囲内で調整してよく、例えば、２．０～１５．０ｍｍ、又は３．０～１３．０ｍｍであってよい。
In the manufacturing method according to the present disclosure, the length L0 of the portion 50b of the conductive plate 50 that exists outside the main surface of the semi-cured resin-impregnated plate 30 when viewed from above is determined depending on the purpose of use of the laminate and the laminate substrate. can be adjusted. The lower limit of the length L0 of the portion 50b may be, for example, 2.0 mm or more, 3.0 mm or more, 4.0 mm or more, or 5.0 mm or more. By setting the lower limit of the length L0 within the above range, it is possible to increase the degree of freedom in designing the protrusion of the conductive part of the obtained multilayer substrate. It can be used as a connection terminal with a device. The upper limit of the length L 0 may be, for example, 15.0 mm or less, 13.0 mm or less, 12.0 mm or less, or 10.0 mm or less. By setting the upper limit of the length L 0 within the above range, the occurrence of warpage in the conductive plate 50 and the metal circuit layer 60 can be further suppressed. The length L 0 of the portion 50b may be adjusted within the above-mentioned range, for example, from 2.0 to 15.0 mm, or from 3.0 to 13.0 mm.
本明細書における導電板５０の、半硬化樹脂含浸板３０の主面の外に存在する部分５０ｂの長さＬ０は、金属板２０、半硬化樹脂含浸板３０、及び導電板５０を有する中間体１００を、上記金属板２０側から観測した際の、半硬化樹脂含浸板３０及び金属板２０の端部３０Ｅと、導電板５０の上記部分５０ｂの端部５０Ｅとの距離の最大値を意味する。半硬化樹脂含浸板３０の主面が四角形状であり、導電板５０が、上記主面の対向する辺の両側において、上記主面の外に存在する部分を有する場合には、半硬化樹脂含浸板３０の端部３０Ｅは、上記長さＬ０を測定する対象となる、導電板５０の端部５０Ｅが存在する側の端部とするものとする。また、半硬化樹脂含浸板３０と金属板２０との端部が一致せず、ずれている場合（例えば、半硬化樹脂含浸板の面積よりも金属板２０の面積が大きい場合など）には、上記長さＬ０は、半硬化樹脂含浸板３０の端部と、導電板５０の端部５０Ｅとの距離の最大値を意味するものとする。
In this specification, the length L 0 of the portion 50b of the conductive plate 50 that exists outside the main surface of the semi-cured resin-impregnated plate 30 is defined as It means the maximum distance between the end 30E of the semi-cured resin-impregnated plate 30 and the metal plate 20 and the end 50E of the portion 50b of the conductive plate 50 when the body 100 is observed from the metal plate 20 side. do. If the main surface of the semi-cured resin-impregnated plate 30 is square and the conductive plate 50 has a portion existing outside the main surface on both sides of the main surface, the semi-cured resin-impregnated plate 30 is impregnated with a semi-cured resin. The end 30E of the plate 30 is the end on the side where the end 50E of the conductive plate 50 exists, which is the object of measuring the length L0 . In addition, if the ends of the semi-cured resin-impregnated plate 30 and the metal plate 20 do not match and are shifted (for example, when the area of the metal plate 20 is larger than the area of the semi-cured resin-impregnated plate), The above-mentioned length L 0 shall mean the maximum value of the distance between the end of the semi-cured resin-impregnated plate 30 and the end 50E of the conductive plate 50.
導電板５０の一部が半硬化樹脂含浸板３０の主面の外側に突出するように配置した後、半硬化樹脂含浸板３０を加熱し、半硬化樹脂を溶融させ、その後、硬化させる。上記操作によって、導電板５０と、金属板２０とが、樹脂充填板４０（半硬化樹脂含浸板３０の硬化物）を介して接着する。
After arranging the conductive plate 50 so that a part of it protrudes outside the main surface of the semi-cured resin-impregnated plate 30, the semi-cured resin-impregnated plate 30 is heated to melt the semi-cured resin, and then hardened. By the above operation, the conductive plate 50 and the metal plate 20 are bonded to each other via the resin filling plate 40 (cured product of the semi-cured resin impregnated plate 30).
半硬化樹脂の溶融及び硬化を行う際の加熱処理の温度の上限値は、２００℃以下であるが、例えば、１９５℃以下、１９０℃以下、１８５℃以下、又は１８０℃以下であってよい。上記加熱処理の温度の上限値が上記範囲内であることで、得られる積層体における導電板５０の変形をより十分に抑制し、導電板５０及び金属回路層６０における反りの発生をより抑制することができる。上記加熱処理の温度の下限値は、例えば、１５０℃以上、１６０℃以上、又は１７０℃以上であってよい。上記加熱処理の温度の下限値を上記範囲内とすることで、半硬化樹脂の硬化をより十分なものとすることができ、得られる積層体における樹脂充填板４０と金属板２０及び導電板５０との接着力をより向上させることができる。上記加熱処理の温度は上述の範囲内で調整してよく、例えば、１５０～２００℃、又は１６０～１９５℃であってよい。
The upper limit of the heat treatment temperature when melting and curing the semi-cured resin is 200°C or lower, but may be, for example, 195°C or lower, 190°C or lower, 185°C or lower, or 180°C or lower. By setting the upper limit of the temperature of the heat treatment within the above range, deformation of the conductive plate 50 in the resulting laminate is more fully suppressed, and occurrence of warpage in the conductive plate 50 and the metal circuit layer 60 is further suppressed. be able to. The lower limit of the temperature of the heat treatment may be, for example, 150°C or higher, 160°C or higher, or 170°C or higher. By setting the lower limit of the temperature of the heat treatment within the above range, the semi-cured resin can be more fully cured, and the resin-filled plate 40, metal plate 20, and conductive plate 50 in the resulting laminate It is possible to further improve the adhesive strength with The temperature of the heat treatment may be adjusted within the above-mentioned range, and may be, for example, 150 to 200°C, or 160 to 195°C.
上述の半硬化樹脂含浸板３０の加熱処理の時間は、半硬化樹脂の硬化率と他工程を加味した製造時間とを考慮して、調整することができる。上記加熱処理の時間の下限値は、例えば、２．０時間以上、２．５時間以上、３．０時間以上、又は３．５時間以上であってよい。上記時間の下限値を上記範囲内とすることで、半硬化樹脂の硬化を十分なものとすることができ、得られる積層体及び積層基板の信頼性をより向上し得る。上記加熱処理の時間の上限値は、例えば、６．０時間以下、５．５時間以下、５．０時間以下、又は４．５時間以下であってよい。上記時間の上限値を上記範囲内とすることで、樹脂の熱劣化を防ぎながら半硬化樹脂の硬化をより確実に行うことができる。上記加熱処理の時間は上述の範囲内で調整してよく、例えば、２．０～６．０時間、又は２．５～５．５時間であってよい。
The time for the heat treatment of the semi-cured resin-impregnated plate 30 described above can be adjusted in consideration of the curing rate of the semi-cured resin and the manufacturing time taking into account other steps. The lower limit of the heat treatment time may be, for example, 2.0 hours or more, 2.5 hours or more, 3.0 hours or more, or 3.5 hours or more. By setting the lower limit of the above-mentioned time within the above-mentioned range, the semi-cured resin can be sufficiently cured, and the reliability of the obtained laminate and laminate substrate can be further improved. The upper limit of the heat treatment time may be, for example, 6.0 hours or less, 5.5 hours or less, 5.0 hours or less, or 4.5 hours or less. By setting the upper limit of the above time within the above range, the semi-cured resin can be cured more reliably while preventing thermal deterioration of the resin. The time for the heat treatment may be adjusted within the above-mentioned range, and may be, for example, 2.0 to 6.0 hours, or 2.5 to 5.5 hours.
上述の半硬化樹脂含浸板３０の加熱処理は、金属板２０、半硬化樹脂含浸板３０及び導電板５０の積層方向に対して、圧力を印加して行うこともできる。この場合の圧力の上限値は、例えば、２０．０ＭＰａ以下、１７．５ＭＰａ以下、１５．０ＭＰａ以下、又は１２．５ＭＰａ以下であってもよい。上記圧力の上限値が上記範囲内であることによって、半硬化樹脂含浸板にクラックが発生することをより抑制し、十分な圧力で接着させることができる。上記圧力の下限値は、例えば、１．０ＭＰａ以上、２．０ＭＰａ以上、３．０ＭＰａ以上、又は４．０ＭＰａ以上であってもよい。上記圧力の下限値が上記範囲内であることによって、得られる積層体における樹脂充填板４０と金属板２０及び導電板５０との接着力をより向上させることができる。上記圧力は上述の範囲内で調整してよく、例えば、１．０～２０．０ＭＰａ、又は３．０～１２．５ＭＰａであってよい。
The above-described heat treatment of the semi-cured resin-impregnated plate 30 can also be performed by applying pressure to the stacking direction of the metal plate 20, the semi-cured resin-impregnated plate 30, and the conductive plate 50. The upper limit of the pressure in this case may be, for example, 20.0 MPa or less, 17.5 MPa or less, 15.0 MPa or less, or 12.5 MPa or less. By setting the upper limit of the pressure within the above range, it is possible to further suppress the occurrence of cracks in the semi-cured resin-impregnated plate and to bond the board with sufficient pressure. The lower limit of the pressure may be, for example, 1.0 MPa or more, 2.0 MPa or more, 3.0 MPa or more, or 4.0 MPa or more. When the lower limit of the pressure is within the above range, the adhesive force between the resin filling plate 40, the metal plate 20, and the conductive plate 50 in the resulting laminate can be further improved. The pressure may be adjusted within the above-mentioned range, for example, from 1.0 to 20.0 MPa, or from 3.0 to 12.5 MPa.
上記製造方法では、導電板５０にたわみが発生することをより抑制する観点から、導電板５０の、半硬化樹脂含浸板３０の主面の外に存在する部分５０ｂの半硬化樹脂含浸板３０側に緩衝材を配置して、半硬化樹脂の溶融及び硬化を行ってもよい。緩衝材は、例えば、半硬化樹脂含浸板３０及び金属板２０の合計厚さと同じ厚さ、又はそれ未満の厚さを有するものであってよい。緩衝材としては、本願における加熱、加圧時に変形せず導電板５０、金属回路等に傷をつけないものが望ましく、またより望ましくは加圧時に変形し、主面内と突出部の圧力差を減らせる材料であればよい。例えば、金属板、及びガスケットシート等を使用できる。
In the above manufacturing method, from the viewpoint of further suppressing the occurrence of deflection in the conductive plate 50, the portion 50b of the conductive plate 50 that exists outside the main surface of the semi-cured resin-impregnated plate 30 is on the semi-cured resin-impregnated plate 30 side. The semi-cured resin may be melted and cured by placing a buffer material therein. The cushioning material may have the same thickness as the total thickness of the semi-cured resin-impregnated plate 30 and the metal plate 20, or a thickness less than that. It is desirable that the cushioning material in the present application be one that does not deform when heated or pressurized and does not damage the conductive plate 50, metal circuits, etc., and more preferably one that deforms when pressurized and reduces the pressure difference between the main surface and the protrusion. Any material that can reduce this is fine. For example, metal plates, gasket sheets, etc. can be used.
上述のようにして製造された積層体に対して、上記積層体の上記導電板に配線パターンを形成することによって、積層基板を製造することもできる。積層基板の製造方法においては、導電板５０に対する配線パターンの加工によって、図１の（ｃ）及び図２の（ｃ）に示されるように、金属回路層６０が形成される。金属回路層６０が形成されることで積層基板１０２が得られる。
A laminate substrate can also be manufactured by forming a wiring pattern on the conductive plate of the laminate manufactured as described above. In the method for manufacturing a laminated board, a metal circuit layer 60 is formed by processing a wiring pattern on a conductive plate 50, as shown in FIGS. 1(c) and 2(c). The laminated substrate 102 is obtained by forming the metal circuit layer 60.
金属回路層６０は、樹脂充填板４０上に設けられた１又は２以上の導電部を有する。上記導電部の少なくとも１つは、上面視において、樹脂充填板４０上に存在する基板部５２ａと、樹脂充填板４０の主面の外まで突出した突出部５２ｂと、を有する第１導電部５２となっている。導電部は、その他、樹脂充填板４０の主面内に収まるようにも受けられている第２導電部６２を含んでもよい。
The metal circuit layer 60 has one or more conductive parts provided on the resin filling plate 40. At least one of the conductive parts is a first conductive part 52 that includes a substrate part 52a existing on the resin filling plate 40 and a protruding part 52b protruding to the outside of the main surface of the resin filling plate 40 when viewed from above. It becomes. The conductive portion may also include a second conductive portion 62 that is also received within the main surface of the resin-filled plate 40 .
図３に示すように、積層基板１０２において第１導電部５２の側面の少なくとも一部は、上述の配線パターンの加工によって形成され、樹脂充填板４０の主面が伸びる方向に対して傾斜する傾斜面を有している。上記傾斜面は、第１導電部５２の側面の全周に亘って形成されていてもよい。上記傾斜面は、上述の配線パターンの加工によって形成される加工面ともいえる。第１導電部５２の側面の傾斜角θは、上記樹脂充填板４０の主面が伸びる方向に対して、例えば、８５°以下、８４°以下、８３°以下、８２°以下、又は８１°以下であってよい。第１導電部５２の側面の傾斜角θは、上記樹脂充填板４０の主面が伸びる方向に対して、例えば、３５°以上、３７°以上、４０°以上、４２°以上、又は４５°以上であってよい。上記傾斜角θの下限値が上記範囲内であることで、第１導電部５２の樹脂充填板４０側とは反対側の主面の面積を大きく確保することができ、該主面への追加処理等を容易に行うことができる。第１導電部５２の側面の傾斜角θは上述の範囲内で調整してよく、上記樹脂充填板４０の主面が伸びる方向に対して、例えば、３５～８５°であってよい。傾斜角は、パターン形成の手段（加工方法及び加工条件）等を調整することによって制御できる。
As shown in FIG. 3, at least a portion of the side surface of the first conductive portion 52 in the laminated substrate 102 is formed by processing the wiring pattern described above, and is inclined with respect to the direction in which the main surface of the resin filling plate 40 extends. It has a surface. The inclined surface may be formed over the entire circumference of the side surface of the first conductive portion 52. The above-mentioned inclined surface can also be said to be a processed surface formed by processing the above-mentioned wiring pattern. The inclination angle θ of the side surface of the first conductive portion 52 is, for example, 85° or less, 84° or less, 83° or less, 82° or less, or 81° or less with respect to the direction in which the main surface of the resin filling plate 40 extends. It may be. The inclination angle θ of the side surface of the first conductive portion 52 is, for example, 35° or more, 37° or more, 40° or more, 42° or more, or 45° or more with respect to the direction in which the main surface of the resin filling plate 40 extends. It may be. By setting the lower limit of the inclination angle θ within the above range, it is possible to secure a large area of the main surface of the first conductive portion 52 on the side opposite to the resin filling plate 40 side, and add to the main surface. Processing etc. can be easily performed. The inclination angle θ of the side surface of the first conductive portion 52 may be adjusted within the above-mentioned range, and may be, for example, 35 to 85 degrees with respect to the direction in which the main surface of the resin filling plate 40 extends. The inclination angle can be controlled by adjusting the pattern forming means (processing method and processing conditions).
第１導電部５２の側面の傾斜角θは、図３で示されるような第１導電部５２を含む断面の画像を取得し、第１導電部５２の端部のうち、樹脂充填板４０の主面の内側に存在する方の端部について、画像解析によって測定される傾斜角を意味する。図３では、傾斜面が直線で構成される例で示したが、傾斜面が直線でない場合、第１導電部５２と樹脂充填板４０とが接する端部を通り、傾斜面に接する接線を設定し、その接線が、樹脂充填板４０の主面の伸びる方向から立ち上がる角度を上記傾斜角θとするものとする。
The inclination angle θ of the side surface of the first conductive part 52 is determined by acquiring an image of a cross section including the first conductive part 52 as shown in FIG. It means the angle of inclination measured by image analysis for the edge located inside the main surface. Although FIG. 3 shows an example in which the inclined surface is a straight line, if the inclined surface is not a straight line, a tangent line is set that passes through the end where the first conductive part 52 and the resin filling plate 40 touch and touches the inclined surface. However, the angle at which the tangent line rises from the direction in which the main surface of the resin filling plate 40 extends is defined as the above-mentioned inclination angle θ.
導電板５０に配線パターンを形成する手段は、例えば、エッチング加工等であってよい。エッチング加工は、例えば、導電板５０の表面に、所望のパターンを有するレジスト層を形成する。レジスト材料としては、例えば、感光性レジスト等を使用できる。感光性レジストを用いる場合、導電板５０上に感光性レジスト材料を含む有機層を設け、露光及び現像することによって、所望のパターンを有するレジスト層を形成できる。レジストは、ネガ型レジストであっても、ポジ型レジストであってもよい。
The means for forming the wiring pattern on the conductive plate 50 may be, for example, etching. In the etching process, for example, a resist layer having a desired pattern is formed on the surface of the conductive plate 50. As the resist material, for example, a photosensitive resist or the like can be used. When using a photosensitive resist, a resist layer having a desired pattern can be formed by providing an organic layer containing a photosensitive resist material on the conductive plate 50, exposing it to light, and developing it. The resist may be a negative resist or a positive resist.
レジスト層を形成した後、エッチングによって導電板５０のうちレジスト層が設けられていない部分を除去し、その後、レジスト層を除去することによって、第１導電部５２を含む導電部によって構成される配線パターンを有する金属回路層６０を形成することができる。配線パターンの形状は、特に限定されるものではない。また配線パターンは、例えば、ファインパターン（Ｆｉｎｅ ｐａｔｔｅｒｎ）等の配線パターンであってよく、いわゆるベタパターン（Ｓｏｌｉｄ ｐａｔｔｅｒｎ）であってよもよい。
After forming the resist layer, the portions of the conductive plate 50 where the resist layer is not provided are removed by etching, and then the resist layer is removed to form wiring formed by conductive parts including the first conductive part 52. A patterned metal circuit layer 60 can be formed. The shape of the wiring pattern is not particularly limited. Further, the wiring pattern may be, for example, a wiring pattern such as a fine pattern, or a so-called solid pattern.
積層体の一実施形態は、金属板と、上記金属板上に設けられた樹脂充填板と、上記樹脂充填板上に設けられた導電板と、を有する。上記導電板は、上面視において、上記樹脂充填板上に存在する基板部と、上記樹脂充填板の主面の外に存在する部分（はみ出し部分）と、を有する。
One embodiment of the laminate includes a metal plate, a resin-filled plate provided on the metal plate, and a conductive plate provided on the resin-filled plate. When viewed from above, the conductive plate has a substrate portion that is present on the resin-filled plate, and a portion that is present outside the main surface of the resin-filled plate (protruding portion).
積層体は、積層基板を調製する際の中間体として有用である。積層体は、配線パターン形成前の中間体であり、積層体を構成する導電板の側面は、エッチング等によって形成された傾斜面を有しない。積層体を構成する導電板に配線パターンを形成することによって積層基板を調製することもできる。
The laminate is useful as an intermediate in preparing a laminate substrate. The laminate is an intermediate before the wiring pattern is formed, and the side surfaces of the conductive plates forming the laminate do not have inclined surfaces formed by etching or the like. A laminated substrate can also be prepared by forming a wiring pattern on the conductive plates constituting the laminated body.
積層基板の一実施形態は、金属板と、上記金属板上に設けられた樹脂充填板と、上記樹脂充填板上に設けられた１又は２以上の導電部と、を有する。上記積層基板において、１又は２以上の上記導電部の少なくとも１つは、上面視において、上記樹脂充填板上に存在する基板部と、上記樹脂充填板の主面の外まで突出した突出部と、を有する第１導電部であり、上記第１導電部の側面が積層方向に対して傾斜している。上記積層基板は、ろう材層を有しないでもよい。上記樹脂充填板は、半硬化樹脂含浸板中の半硬化樹脂の硬化を進行させたものであり、半硬化樹脂含浸板の硬化物ということもできる。
One embodiment of the laminated board includes a metal plate, a resin filling plate provided on the metal plate, and one or more conductive parts provided on the resin filling plate. In the laminated board, at least one of the one or more conductive parts includes a substrate part existing on the resin filling plate and a protruding part protruding to the outside of the main surface of the resin filling plate when viewed from above. , and a side surface of the first conductive part is inclined with respect to the stacking direction. The laminated substrate may not have a brazing material layer. The resin-filled plate is obtained by curing the semi-cured resin in the semi-cured resin-impregnated plate, and can also be called a cured product of the semi-cured resin-impregnated plate.
上記積層基板は、樹脂充填板を有することから、絶縁性に優れる。従来の積層基板では、外部回路との接続用に、別途端子をはんだ付け等によって設ける必要がある。しかし、このような態様の場合、積層基板の導電部と、後付け端子との接合界面等により、電力損失が発生し得る。一方、本開示に係る積層基板では、樹脂充填板の主面の外まで突出した突出部を有する導電部を有する。上述の突出部は、それ自体を外部回路との接続用として使用し得る。これによって、外部回路との接続における電力損失を低減し得る。
The above-mentioned laminated substrate has excellent insulation properties because it has a resin-filled plate. In conventional laminated boards, it is necessary to provide separate terminals by soldering or the like for connection with external circuits. However, in such an embodiment, power loss may occur due to the bonding interface between the conductive portion of the multilayer substrate and the post-attached terminal. On the other hand, the laminated board according to the present disclosure includes a conductive portion having a protrusion that protrudes to the outside of the main surface of the resin filling plate. The above-mentioned protrusion itself can be used for connection with an external circuit. This can reduce power loss in connection with external circuits.
図４は、積層基板の一例を示す模式図である。図５は、図４のＶ－Ｖ線に沿った端面図である。図６は、図４に示した積層基板の平面図である。積層基板１０３は、金属板２０と、樹脂充填板４０と、金属回路層６０とをこの順に有する。図４に示した例では、金属回路層６０は、上面視で樹脂充填板４０の主面から外に突出した部分を有する第１導電部５２と、上面視で樹脂充填板４０の主面内に収まるように形成された第２導電部６２と、で構成されている。第１導電部５２は、上面視において、樹脂充填板４０上に存在する基板部５２ａと、樹脂充填板４０の主面の外まで突出した突出部５２ｂと、を有する。
FIG. 4 is a schematic diagram showing an example of a laminated substrate. FIG. 5 is an end view taken along line VV in FIG. 4. FIG. 6 is a plan view of the laminated substrate shown in FIG. 4. The laminated board 103 includes a metal plate 20, a resin filling plate 40, and a metal circuit layer 60 in this order. In the example shown in FIG. 4, the metal circuit layer 60 includes a first conductive portion 52 having a portion protruding outward from the main surface of the resin filling plate 40 when viewed from above, and a first conductive portion 52 having a portion extending outward from the main surface of the resin filling plate 40 when viewed from above. and a second conductive part 62 that is formed to fit within. The first conductive portion 52 includes a substrate portion 52a existing on the resin filling plate 40 and a protruding portion 52b protruding to the outside of the main surface of the resin filling plate 40 when viewed from above.
第１導電部５２における突出部５２ｂの長さＬ１は、積層基板の使用の目的に応じて調整してよい。かかる調整は、例えば、配線パターンを形成する前の積層体において、導電板５０の樹脂充填板４０の主面の外に存在するはみ出し部分５０ｂの長さＬ０を変更すること、及び、積層体を調製する際に、導電板の、上記半硬化樹脂含浸板の主面の外に存在する部分の長さＬ０を変更すること等によって行うことができる。上記突出部５２ｂの長さＬ１の下限値は、例えば、２．０ｍｍ以上、３．０ｍｍ以上、４．０ｍｍ以上、又は５．０ｍｍ以上であってよい。上記長さＬ１の下限値を上記範囲内とすることによって、外部回路との接続に十分な距離の回路があり容易に次工程に組み込むことができる。上記突出部５２ｂの長さＬ１の上限値は、例えば、１５．０ｍｍ以下、１３．０ｍｍ以下、１２．０ｍｍ以下、又は１０．０ｍｍ以下であってよい。上記長さＬ１の上限値を上記範囲内とすることで、外部回路との接続を行いながら、ハンドリングによる突出部の剥がれ、曲がり等を発生しにくくすることができる。上記突出部５２ｂの長さＬ１は上述の範囲内で調整してよく、例えば、２．０～１５．０ｍｍ、又は３．０～１３．０ｍｍであってよい。
The length L1 of the protruding portion 52b in the first conductive portion 52 may be adjusted depending on the purpose of use of the multilayer substrate. Such adjustment includes, for example, changing the length L 0 of the protruding portion 50b of the conductive plate 50 that exists outside the main surface of the resin-filled plate 40 in the laminate before forming the wiring pattern, and This can be done by, for example, changing the length L 0 of the portion of the conductive plate that exists outside the main surface of the semi-cured resin-impregnated plate. The lower limit of the length L1 of the protruding portion 52b may be, for example, 2.0 mm or more, 3.0 mm or more, 4.0 mm or more, or 5.0 mm or more. By setting the lower limit of the length L1 within the above range, there is a circuit with a sufficient distance for connection with an external circuit, and it can be easily incorporated into the next process. The upper limit of the length L1 of the protruding portion 52b may be, for example, 15.0 mm or less, 13.0 mm or less, 12.0 mm or less, or 10.0 mm or less. By setting the upper limit of the length L1 within the above range, it is possible to prevent the protrusion from peeling off, bending, etc. due to handling while connecting to an external circuit. The length L 1 of the protruding portion 52b may be adjusted within the above-mentioned range, and may be, for example, 2.0 to 15.0 mm, or 3.0 to 13.0 mm.
上記突出部５２ｂの長さＬ１は、金属板２０、樹脂充填板４０、及び金属回路層６０を有する積層基板１０２，１０３を、上記金属板２０側から観測した際の、樹脂充填板４０及び金属板２０の端部４０Ｅと、第１導電部５２の突出部５２ｂの端部５２Ｅとの距離の最大値を意味する。上記突出部５２ｂの長さＬ１は、本開示に係る積層体の製造方法において説明した、導電板５０の、半硬化樹脂含浸板３０の主面の外に存在する部分５０ｂの長さＬ０と同様の方法によって測定することができる。第１導電部が複数存在する場合には、それぞれの第１導電部５２について、突出部５２ｂの長さを測定し、その算術平均値を測定対象の積層基板における突出部５２ｂの長さＬ１とする。
The length L 1 of the protruding portion 52b is the length L1 of the resin filling plate 40 and the resin filling plate 40 when the laminated substrates 102 and 103 having the metal plate 20, the resin filling plate 40, and the metal circuit layer 60 are observed from the metal plate 20 side. It means the maximum distance between the end 40E of the metal plate 20 and the end 52E of the protrusion 52b of the first conductive part 52. The length L 1 of the protruding portion 52b is the length L 0 of the portion 50b of the conductive plate 50 that exists outside the main surface of the semi-cured resin-impregnated plate 30, as described in the method for manufacturing a laminate according to the present disclosure . It can be measured by the same method. When a plurality of first conductive parts exist, the length of the protruding part 52b is measured for each of the first conductive parts 52, and the arithmetic mean value is calculated as the length L1 of the protruding part 52b in the laminated board to be measured. shall be.
第１導電部５２の厚さＴの上限値は、例えば、１．５ｍｍ以下、１．０ｍｍ以下、０．８ｍｍ以下、又は０．６ｍｍ以下であってもよい。第１導電部５２の厚さＴの上限値が上記範囲内であることで、樹脂充填板４０との熱膨張差が抑えられ、より信頼性に優れた積層基板を製造できる。第１導電部５２の厚さＴの下限値は、例えば、０．１ｍｍ以上、０．３ｍｍ以上、又は０．４ｍｍ以上であってよい。第１導電部５２の厚さＴの下限値が上記範囲内であることで、第１導電部５２の上面にて発熱した場合にもより効率よく下面へ放熱することができる。第１導電部５２の厚さＴは上述の範囲内で調整してよく、例えば、０．１～１．５ｍｍであってよい。
The upper limit of the thickness T of the first conductive portion 52 may be, for example, 1.5 mm or less, 1.0 mm or less, 0.8 mm or less, or 0.6 mm or less. By setting the upper limit of the thickness T of the first conductive portion 52 within the above range, the difference in thermal expansion with the resin filling plate 40 can be suppressed, and a laminated substrate with higher reliability can be manufactured. The lower limit of the thickness T of the first conductive portion 52 may be, for example, 0.1 mm or more, 0.3 mm or more, or 0.4 mm or more. Since the lower limit of the thickness T of the first conductive part 52 is within the above range, even when heat is generated on the upper surface of the first conductive part 52, heat can be more efficiently radiated to the lower surface. The thickness T of the first conductive portion 52 may be adjusted within the above-mentioned range, and may be, for example, 0.1 to 1.5 mm.
第１導電部５２の厚さは、主面に直交する方向に沿って測定され、厚さが一定ではない場合、任意の１０箇所を選択して厚さの測定を行い、その平均値が上述の範囲であればよい。
The thickness of the first conductive part 52 is measured along the direction perpendicular to the main surface, and if the thickness is not constant, select 10 arbitrary points and measure the thickness, and the average value is the above-mentioned value. It is sufficient if it is within the range of .
上記第１導電部５２の厚さＴに対する、上記突出部５２ｂの長さＬ１の比（Ｌ１／Ｔで表される値）の上限値は、例えば、５０．０以下であってよく、５０．０未満、４５．０以下、４０．０以下、３５．０以下、又は３０．０以下であってよい。上記比の上限値が上記範囲内であることで、突出部５２ｂの強度が高くなり、ハンドリング時の変形を防ぐことができる。上述の比の下限値は、例えば、５．０以上、７．５以上、１０．０以上、又は１２．５以上であってよい。上記比の下限値が上記範囲内であることで、突出部５２ｂの形成がより容易となり、より簡便に目的の構造を作製することができる。上記比は上述の範囲内で調整してよく、例えば、５．０～５０．０であってよい。
The upper limit of the ratio of the length L 1 of the protruding portion 52b to the thickness T of the first conductive portion 52 (value expressed as L 1 /T) may be, for example, 50.0 or less, It may be less than 50.0, 45.0 or less, 40.0 or less, 35.0 or less, or 30.0 or less. When the upper limit of the ratio is within the above range, the strength of the protrusion 52b is increased, and deformation during handling can be prevented. The lower limit of the above ratio may be, for example, 5.0 or more, 7.5 or more, 10.0 or more, or 12.5 or more. When the lower limit of the ratio is within the above range, the protrusion 52b can be more easily formed, and the desired structure can be manufactured more easily. The ratio may be adjusted within the above range, for example, from 5.0 to 50.0.
上記積層基板１０２，１０３において、第１導電部５２の積層方向に対する反り量は小さく抑えられている。上記突出部５２ｂの、上記第１導電部５２から上記金属板２０へ向かう方向へのたわみ量である反り量の上限値は、例えば、０．５０ｍｍ未満、０．４０ｍｍ未満、０．３０ｍｍ未満、０．２５ｍｍ以下、０．２０ｍｍ以下、０．１８ｍｍ以下、又は０．１６ｍｍ以下であってよい。上記反り量の上限値が上記範囲内であることで、積層基板の各層におけるはく離がより抑制され、信頼性をより向上できる。第１導電部５２の積層方向に対する反り量の下限値は、特に限定されるものではないが、例えば、０．０５ｍｍ以上、０．０８ｍｍ以上、又は０．１０ｍｍ以上であってもよい。第１導電部５２の積層方向に対する反り量は上述の範囲内に調整してよく、例えば、０．０５ｍｍ以上０．５０ｍｍ未満、０．０５ｍｍ以上０．３０ｍｍ未満、又は０．０５～０．２５ｍｍであってよい。
In the laminated substrates 102 and 103, the amount of warpage of the first conductive portion 52 in the lamination direction is kept small. The upper limit of the amount of warpage, which is the amount of deflection of the protruding portion 52b in the direction from the first conductive portion 52 toward the metal plate 20, is, for example, less than 0.50 mm, less than 0.40 mm, less than 0.30 mm, It may be 0.25 mm or less, 0.20 mm or less, 0.18 mm or less, or 0.16 mm or less. When the upper limit of the amount of warpage is within the above range, peeling in each layer of the laminated substrate can be further suppressed, and reliability can be further improved. The lower limit of the amount of warpage of the first conductive portion 52 in the stacking direction is not particularly limited, but may be, for example, 0.05 mm or more, 0.08 mm or more, or 0.10 mm or more. The amount of warpage of the first conductive portion 52 in the stacking direction may be adjusted within the above-mentioned range, for example, 0.05 mm or more and less than 0.50 mm, 0.05 mm or more and less than 0.30 mm, or 0.05 to 0.25 mm. It may be.
第１導電部５２の上記突出部５２ｂの、上記第１導電部５２から上記金属板２０へ向かう方向へのたわみ量である反り量は、以下の方法によって測定される値を意味する。具体的には、まずワンショット３Ｄ形状測定機のステージ上にサンプルをセットし、第１導電部５２の主面の位置（基準位置）を測定し、基準位置を定めたのと同じ第１導電部５２について突出部５２ｂの主面の位置を測定する。その後、両位置の差分を算出し、上記第１導電部５２から上記金属板２０へ向かう方向へのたわみ量Ｆとする。突出部５２ｂを複数有する場合には、上記反り量は、上述のようにして測定されるたわみ量Ｆのうち最大値を意味する。突出部５２ｂの主面の位置は、突出部５２ｂの端部（樹脂充填板４０の端部からの距離が最大となる点）とする。たわみ量の測定は、第１導電部５２の両主面のどちらを基準にしてもよい。図７は、たわみ量である反り量の測定に関する模式図である。図７では、第１導電部５２の樹脂充填板４０側とは反対側の主面を基準位置とする例を示した。ワンショット３Ｄ形状測定機としては、例えば、株式会社キーエンス製の「ＶＲ－３０００」（商品名）等を使用できる。
The amount of warpage, which is the amount of deflection of the protrusion 52b of the first conductive part 52 in the direction from the first conductive part 52 toward the metal plate 20, means a value measured by the following method. Specifically, first, a sample is set on the stage of a one-shot 3D shape measuring machine, the position (reference position) of the main surface of the first conductive part 52 is measured, and the same first conductor as the reference position is set. Regarding the portion 52, the position of the main surface of the protruding portion 52b is measured. Thereafter, the difference between the two positions is calculated and used as the amount of deflection F in the direction from the first conductive portion 52 toward the metal plate 20. When a plurality of protrusions 52b are provided, the amount of warpage means the maximum value of the amount of deflection F measured as described above. The main surface of the protrusion 52b is located at the end of the protrusion 52b (the point at which the distance from the end of the resin filling plate 40 is maximum). The amount of deflection may be measured using either of the principal surfaces of the first conductive portion 52 as a reference. FIG. 7 is a schematic diagram regarding measurement of the amount of warpage, which is the amount of deflection. FIG. 7 shows an example in which the main surface of the first conductive portion 52 on the side opposite to the resin filling plate 40 side is set as the reference position. As the one-shot 3D shape measuring machine, for example, "VR-3000" (trade name) manufactured by Keyence Corporation can be used.
樹脂充填板上に２以上の導電部を有する場合、第１導電部５２と、第１導電部５２と隣接する導電部との距離の最小値を調整することもできる。なお、隣接する導電部は、第１導電部であっても、第２導電部６２であってもよい。第１導電部５２と、第１導電部５２と隣接する導電部との距離の最小値は、例えば、２．０ｍｍ以下、１．８ｍｍ以下、１．５ｍｍ以下、１．２ｍｍ以下、又は１．０ｍｍ以下であってよい。上記最小値が上記範囲内であると、より複雑なパターンを有する回路とすることも可能であり、より高度な積層基板を作製することができる。第１導電部５２と、第１導電部５２と隣接する導電部との距離の最小値は、例えば、０．３ｍｍ以上、０．５ｍｍ以上、０．７ｍｍ以上、又は０．８ｍｍ以上であってよい。上記最小値が上記範囲内であると、絶縁性測定時に回路間の放電を防ぐことができる。第１導電部５２と、第１導電部５２と隣接する導電部との距離は最小値が上述の範囲内となるように調整してよく、上記最小値が、例えば、０．３～２．０ｍｍであってよい。
When there are two or more conductive parts on the resin filling plate, the minimum distance between the first conductive part 52 and the conductive part adjacent to the first conductive part 52 can also be adjusted. Note that the adjacent conductive part may be the first conductive part or the second conductive part 62. The minimum value of the distance between the first conductive part 52 and the conductive part adjacent to the first conductive part 52 is, for example, 2.0 mm or less, 1.8 mm or less, 1.5 mm or less, 1.2 mm or less, or 1. It may be 0 mm or less. When the minimum value is within the above range, it is possible to create a circuit with a more complicated pattern, and a more sophisticated laminated board can be manufactured. The minimum value of the distance between the first conductive part 52 and a conductive part adjacent to the first conductive part 52 is, for example, 0.3 mm or more, 0.5 mm or more, 0.7 mm or more, or 0.8 mm or more. good. When the minimum value is within the above range, discharge between circuits can be prevented during insulation measurement. The distance between the first conductive part 52 and the conductive part adjacent to the first conductive part 52 may be adjusted so that the minimum value is within the above-mentioned range, and the minimum value is, for example, 0.3 to 2. It may be 0 mm.
以上、幾つかの実施形態について説明したが、本開示は上記実施形態に何ら限定されるものではない。また、上述した実施形態についての説明内容は、互いに適用することができる。
Although several embodiments have been described above, the present disclosure is not limited to the above embodiments. Further, the descriptions of the embodiments described above can be applied to each other.
以下、本開示について、実施例及び比較例を用いてより詳細に説明する。なお、本開示は以下の実施例に限定されるものではない。
Hereinafter, the present disclosure will be described in more detail using Examples and Comparative Examples. Note that the present disclosure is not limited to the following examples.
（実施例１）
［窒化物焼結板の作製］
新日本電工株式会社製のオルトホウ酸１００質量部と、デンカ株式会社製のアセチレンブラック（商品名：ＨＳ１００）３５質量部とをヘンシェルミキサーを用いて混合した。得られた混合物を、黒鉛製のルツボ中に充填し、アーク炉にて、アルゴン雰囲気で、２２００℃にて５時間加熱し、塊状の炭化ホウ素（Ｂ４Ｃ）を得た。得られた塊状物を、ジョークラッシャーで粗粉砕して粗粉を得た。この粗粉を、炭化珪素製のボール（φ１０ｍｍ）を有するボールミルによってさらに粉砕して粉砕粉を得た。 (Example 1)
[Preparation of sintered nitride plate]
100 parts by mass of orthoboric acid manufactured by Nippon Denko Corporation and 35 parts by mass of acetylene black (trade name: HS100) manufactured by Denka Corporation were mixed using a Henschel mixer. The obtained mixture was filled into a graphite crucible and heated in an arc furnace at 2200° C. in an argon atmosphere for 5 hours to obtain bulk boron carbide (B 4 C). The obtained lumps were coarsely crushed using a jaw crusher to obtain coarse powder. This coarse powder was further pulverized using a ball mill having silicon carbide balls (φ10 mm) to obtain a pulverized powder.
［窒化物焼結板の作製］
新日本電工株式会社製のオルトホウ酸１００質量部と、デンカ株式会社製のアセチレンブラック（商品名：ＨＳ１００）３５質量部とをヘンシェルミキサーを用いて混合した。得られた混合物を、黒鉛製のルツボ中に充填し、アーク炉にて、アルゴン雰囲気で、２２００℃にて５時間加熱し、塊状の炭化ホウ素（Ｂ４Ｃ）を得た。得られた塊状物を、ジョークラッシャーで粗粉砕して粗粉を得た。この粗粉を、炭化珪素製のボール（φ１０ｍｍ）を有するボールミルによってさらに粉砕して粉砕粉を得た。 (Example 1)
[Preparation of sintered nitride plate]
100 parts by mass of orthoboric acid manufactured by Nippon Denko Corporation and 35 parts by mass of acetylene black (trade name: HS100) manufactured by Denka Corporation were mixed using a Henschel mixer. The obtained mixture was filled into a graphite crucible and heated in an arc furnace at 2200° C. in an argon atmosphere for 5 hours to obtain bulk boron carbide (B 4 C). The obtained lumps were coarsely crushed using a jaw crusher to obtain coarse powder. This coarse powder was further pulverized using a ball mill having silicon carbide balls (φ10 mm) to obtain a pulverized powder.
調製した粉砕粉を、窒化ホウ素製のルツボに充填した。その後、抵抗加熱炉を用い、窒素ガス雰囲気下で、２０００℃、０．８５ＭＰａの条件で１０時間加熱した。このようにして炭窒化ホウ素（Ｂ４ＣＮ４）を含む焼成物を得た。
The prepared pulverized powder was filled into a boron nitride crucible. Thereafter, it was heated in a nitrogen gas atmosphere at 2000° C. and 0.85 MPa for 10 hours using a resistance heating furnace. In this way, a fired product containing boron carbonitride (B 4 CN 4 ) was obtained.
粉末状のホウ酸と炭酸カルシウムを配合して焼結助剤を調製した。調製にあたっては、１００質量部のホウ酸に対して、炭酸カルシウムを５０．０質量部配合した。焼成物１００質量部に対して焼結助剤を２０質量部配合し、ヘンシェルミキサーを用いて混合して粉末状の配合物を調製した。
A sintering aid was prepared by blending powdered boric acid and calcium carbonate. In preparation, 50.0 parts by mass of calcium carbonate was blended with 100 parts by mass of boric acid. 20 parts by mass of a sintering aid was added to 100 parts by mass of the fired product, and mixed using a Henschel mixer to prepare a powdery mixture.
配合物を、粉末プレス機を用いて、１５０ＭＰａで３０秒間加圧して、シート状（縦×横×厚さ＝５０ｍｍ×５０ｍｍ×０．３５ｍｍ）の成形体を得た。同様の操作によって、成形板を３枚調製した。
The blend was pressed at 150 MPa for 30 seconds using a powder press to obtain a sheet-like molded product (length x width x thickness = 50 mm x 50 mm x 0.35 mm). Three molded plates were prepared by the same operation.
次に、アモルファス状の窒化ホウ素（デンカ株式会社製、商品名：ＧＰ）３０質量部を、テルピネオール６０重量部、トルエン３０重量部、及びポリイソブチルメタクリレート１０重量部の混合物からなる離型剤スラリーに分散させ、スラリーを調製した。得られたスラリーを、上記成形板の一方の主面上にドクターブレード法によって、厚さが０．０３ｍｍの塗膜（窒化ホウ素含有層）を設けた。塗膜を設けた成形板を、成形板同士が互いに塗膜を介するようにして積層した。
Next, 30 parts by mass of amorphous boron nitride (manufactured by Denka Corporation, trade name: GP) was added to a mold release agent slurry consisting of a mixture of 60 parts by weight of terpineol, 30 parts by weight of toluene, and 10 parts by weight of polyisobutyl methacrylate. The mixture was dispersed to prepare a slurry. A coating film (boron nitride-containing layer) having a thickness of 0.03 mm was formed using the obtained slurry on one main surface of the molded plate using a doctor blade method. The molded plates provided with the coating film were laminated together with the coating film interposed between the molded plates.
互いに積層された３枚の成形板を窒化ホウ素製容器に入れ、バッチ式高周波炉に導入した。バッチ式高周波炉において、常圧、窒素流量５Ｌ／分、２０００℃の条件で５時間加熱した（焼成工程）。その後、窒化ホウ素製容器から窒化ホウ素焼結板（焼結体）と離型層とが交互に重なる積層物を取り出した。積層物を構成する窒化ホウ素焼結板を、シクネスゲージリーフを用いて、はく離し、表層に離型層が残る焼成板を３枚得た。各焼成板の厚さは０．４０ｍｍであった。
Three molded plates stacked on top of each other were placed in a boron nitride container and introduced into a batch-type high-frequency furnace. In a batch type high frequency furnace, heating was performed for 5 hours at normal pressure, nitrogen flow rate of 5 L/min, and 2000° C. (firing step). Thereafter, a laminate in which boron nitride sintered plates (sintered bodies) and release layers alternately overlapped was taken out from the boron nitride container. The boron nitride sintered plates constituting the laminate were peeled off using a thickness gauge leaf to obtain three sintered plates with a release layer remaining on the surface layer. The thickness of each fired plate was 0.40 mm.
＜メジアン細孔径の測定＞
得られた窒化ホウ素焼結板について、株式会社島津製作所製の水銀ポロシメーター（装置名：オートポアＩＶ９５００）を用い、０．００４２ＭＰａから２０６．８ＭＰａまで圧力を増加しながら細孔容積分布を測定し、メジアン細孔径を決定した。窒化ホウ素焼結板のメジアン細孔径は２．６μｍであった。 <Measurement of median pore diameter>
The pore volume distribution of the obtained boron nitride sintered plate was measured using a mercury porosimeter (equipment name: Autopore IV9500) manufactured by Shimadzu Corporation while increasing the pressure from 0.0042 MPa to 206.8 MPa, and the median The pore size was determined. The median pore diameter of the boron nitride sintered plate was 2.6 μm.
得られた窒化ホウ素焼結板について、株式会社島津製作所製の水銀ポロシメーター（装置名：オートポアＩＶ９５００）を用い、０．００４２ＭＰａから２０６．８ＭＰａまで圧力を増加しながら細孔容積分布を測定し、メジアン細孔径を決定した。窒化ホウ素焼結板のメジアン細孔径は２．６μｍであった。 <Measurement of median pore diameter>
The pore volume distribution of the obtained boron nitride sintered plate was measured using a mercury porosimeter (equipment name: Autopore IV9500) manufactured by Shimadzu Corporation while increasing the pressure from 0.0042 MPa to 206.8 MPa, and the median The pore size was determined. The median pore diameter of the boron nitride sintered plate was 2.6 μm.
＜細孔率の測定＞
得られた窒化ホウ素焼結板の細孔率を決定した。まず、窒化ホウ素焼結板の体積及び質量から、かさ密度［Ｙ（ｋｇ／ｍ３）］を算出し、このかさ密度と窒化物の理論密度［Ｘ（ｋｇ／ｍ３）］とから、下記式（１）によって求めた。窒化ホウ素焼結体の細孔率は５２体積％であった。窒化ホウ素焼結板の理論密度Ｘは２２８０ｋｇ／ｍ３を用いた。
細孔率（体積％）＝［１－（Ｙ／Ｘ）］×１００ （２） <Measurement of porosity>
The porosity of the obtained boron nitride sintered plate was determined. First, the bulk density [Y (kg/m 3 )] is calculated from the volume and mass of the boron nitride sintered plate, and from this bulk density and the theoretical density of nitride [X (kg/m 3 )], the following It was determined using equation (1). The porosity of the boron nitride sintered body was 52% by volume. The theoretical density X of the boron nitride sintered plate was 2280 kg/m 3 .
Porosity (volume %) = [1-(Y/X)] x 100 (2)
得られた窒化ホウ素焼結板の細孔率を決定した。まず、窒化ホウ素焼結板の体積及び質量から、かさ密度［Ｙ（ｋｇ／ｍ３）］を算出し、このかさ密度と窒化物の理論密度［Ｘ（ｋｇ／ｍ３）］とから、下記式（１）によって求めた。窒化ホウ素焼結体の細孔率は５２体積％であった。窒化ホウ素焼結板の理論密度Ｘは２２８０ｋｇ／ｍ３を用いた。
細孔率（体積％）＝［１－（Ｙ／Ｘ）］×１００ （２） <Measurement of porosity>
The porosity of the obtained boron nitride sintered plate was determined. First, the bulk density [Y (kg/m 3 )] is calculated from the volume and mass of the boron nitride sintered plate, and from this bulk density and the theoretical density of nitride [X (kg/m 3 )], the following It was determined using equation (1). The porosity of the boron nitride sintered body was 52% by volume. The theoretical density X of the boron nitride sintered plate was 2280 kg/m 3 .
Porosity (volume %) = [1-(Y/X)] x 100 (2)
［半硬化樹脂含浸板の作製］
容器に、シアネート基を有する化合物が８０質量部、ビスマレイミド基を有する化合物が２０質量部、エポキシ基を有する化合物が５０質量部となるように測り取り、上記３種の化合物合計量１００質量部に対して、ホスフィン系硬化剤を１質量部及びイミダゾール系硬化剤を０．０１質量部加えて混合した。なお、エポキシ樹脂が室温で固体状態であったため、８０℃程度に加熱した状態で混合した。得られた熱硬化性樹脂組成物の１００℃における粘度は、１０ｍＰａ・秒であった。調製した熱硬化性樹脂組成物を１００℃にした後、その温度を維持したままディスペンサーを用いて、窒化ホウ素焼結板の上側の主面上に滴下して熱硬化性樹脂組成物を含浸した。熱硬化性樹脂組成物の滴下量は、窒化ホウ素焼結板の気孔の全体積の１．５倍とした。熱硬化性樹脂組成物の一部は、窒化ホウ素焼結板に含浸せず、主面上に残存した。 [Preparation of semi-cured resin impregnated board]
In a container, measure 80 parts by mass of the compound having a cyanate group, 20 parts by mass of the compound having a bismaleimide group, and 50 parts by mass of the compound having an epoxy group, and add 100 parts by mass of the above three types of compounds in total. 1 part by mass of a phosphine curing agent and 0.01 part by mass of an imidazole curing agent were added and mixed. Note that since the epoxy resin was in a solid state at room temperature, it was mixed while being heated to about 80°C. The viscosity of the obtained thermosetting resin composition at 100° C. was 10 mPa·sec. After the prepared thermosetting resin composition was heated to 100° C., it was dripped onto the upper main surface of a boron nitride sintered board using a dispenser while maintaining that temperature to impregnate it with the thermosetting resin composition. . The amount of the thermosetting resin composition dropped was 1.5 times the total volume of the pores of the boron nitride sintered board. A part of the thermosetting resin composition did not impregnate the boron nitride sintered board and remained on the main surface.
容器に、シアネート基を有する化合物が８０質量部、ビスマレイミド基を有する化合物が２０質量部、エポキシ基を有する化合物が５０質量部となるように測り取り、上記３種の化合物合計量１００質量部に対して、ホスフィン系硬化剤を１質量部及びイミダゾール系硬化剤を０．０１質量部加えて混合した。なお、エポキシ樹脂が室温で固体状態であったため、８０℃程度に加熱した状態で混合した。得られた熱硬化性樹脂組成物の１００℃における粘度は、１０ｍＰａ・秒であった。調製した熱硬化性樹脂組成物を１００℃にした後、その温度を維持したままディスペンサーを用いて、窒化ホウ素焼結板の上側の主面上に滴下して熱硬化性樹脂組成物を含浸した。熱硬化性樹脂組成物の滴下量は、窒化ホウ素焼結板の気孔の全体積の１．５倍とした。熱硬化性樹脂組成物の一部は、窒化ホウ素焼結板に含浸せず、主面上に残存した。 [Preparation of semi-cured resin impregnated board]
In a container, measure 80 parts by mass of the compound having a cyanate group, 20 parts by mass of the compound having a bismaleimide group, and 50 parts by mass of the compound having an epoxy group, and add 100 parts by mass of the above three types of compounds in total. 1 part by mass of a phosphine curing agent and 0.01 part by mass of an imidazole curing agent were added and mixed. Note that since the epoxy resin was in a solid state at room temperature, it was mixed while being heated to about 80°C. The viscosity of the obtained thermosetting resin composition at 100° C. was 10 mPa·sec. After the prepared thermosetting resin composition was heated to 100° C., it was dripped onto the upper main surface of a boron nitride sintered board using a dispenser while maintaining that temperature to impregnate it with the thermosetting resin composition. . The amount of the thermosetting resin composition dropped was 1.5 times the total volume of the pores of the boron nitride sintered board. A part of the thermosetting resin composition did not impregnate the boron nitride sintered board and remained on the main surface.
熱硬化性樹脂組成物の調製には、以下の化合物を用いた。
The following compounds were used to prepare the thermosetting resin composition.
シアネート基を有する化合物：ジメチルメチレンビス（１，４－フェニレン）ビスシアナート（三菱ガス化学株式会社製、商品名：ＴＡ－ＣＮ）
ビスマレイミド基を有する化合物：Ｎ，Ｎ’－［（１－メチルエチリデン）ビス［（ｐ－フェニレン）オキシ（ｐ－フェニレン）］］ビスマレイミド（ケイ・アイ化成株式会社製、商品名：ＢＭＩ－８０）
エポキシ基を有する化合物：１，６－ビス（２,３－エポキシプロパン－１－イルオキシ）ナフタレン（ＤＩＣ株式会社製、商品名：ＨＰ－４０３２Ｄ） Compound having a cyanate group: dimethylmethylenebis(1,4-phenylene)biscyanate (manufactured by Mitsubishi Gas Chemical Co., Ltd., product name: TA-CN)
Compound having bismaleimide group: N,N'-[(1-methylethylidene)bis[(p-phenylene)oxy(p-phenylene)]]bismaleimide (manufactured by K.I. Kasei Co., Ltd., product name: BMI- 80)
Compound with epoxy group: 1,6-bis(2,3-epoxypropan-1-yloxy)naphthalene (manufactured by DIC Corporation, product name: HP-4032D)
ビスマレイミド基を有する化合物：Ｎ，Ｎ’－［（１－メチルエチリデン）ビス［（ｐ－フェニレン）オキシ（ｐ－フェニレン）］］ビスマレイミド（ケイ・アイ化成株式会社製、商品名：ＢＭＩ－８０）
エポキシ基を有する化合物：１，６－ビス（２,３－エポキシプロパン－１－イルオキシ）ナフタレン（ＤＩＣ株式会社製、商品名：ＨＰ－４０３２Ｄ） Compound having a cyanate group: dimethylmethylenebis(1,4-phenylene)biscyanate (manufactured by Mitsubishi Gas Chemical Co., Ltd., product name: TA-CN)
Compound having bismaleimide group: N,N'-[(1-methylethylidene)bis[(p-phenylene)oxy(p-phenylene)]]bismaleimide (manufactured by K.I. Kasei Co., Ltd., product name: BMI- 80)
Compound with epoxy group: 1,6-bis(2,3-epoxypropan-1-yloxy)naphthalene (manufactured by DIC Corporation, product name: HP-4032D)
ホスフィン系硬化剤：テトラフェニルホスホニウムテトラ－ｐ－トリルボレート（化学株式会社製、商品名：ＴＰＰ－ＭＫ）
イミダゾール系硬化剤：１－（１－シアノメチル）－２－エチル－４－メチル－１Ｈ－イミダゾール（四国化成工業株式会社製、商品名：２Ｅ４ＭＺ－ＣＮ） Phosphine curing agent: Tetraphenylphosphonium tetra-p-tolylborate (manufactured by Kagaku Co., Ltd., trade name: TPP-MK)
Imidazole curing agent: 1-(1-cyanomethyl)-2-ethyl-4-methyl-1H-imidazole (manufactured by Shikoku Kasei Kogyo Co., Ltd., product name: 2E4MZ-CN)
イミダゾール系硬化剤：１－（１－シアノメチル）－２－エチル－４－メチル－１Ｈ－イミダゾール（四国化成工業株式会社製、商品名：２Ｅ４ＭＺ－ＣＮ） Phosphine curing agent: Tetraphenylphosphonium tetra-p-tolylborate (manufactured by Kagaku Co., Ltd., trade name: TPP-MK)
Imidazole curing agent: 1-(1-cyanomethyl)-2-ethyl-4-methyl-1H-imidazole (manufactured by Shikoku Kasei Kogyo Co., Ltd., product name: 2E4MZ-CN)
大気圧下、窒化ホウ素焼結板の上側の主面上に残存する樹脂組成物を、ステンレス製のスクレーパー（株式会社ナルビー製）を用いて平滑化した。余剰分の樹脂組成物を除去し、主面が平滑である半硬化樹脂含浸板を得た。
Under atmospheric pressure, the resin composition remaining on the upper main surface of the boron nitride sintered plate was smoothed using a stainless steel scraper (manufactured by Narubi Co., Ltd.). The excess resin composition was removed to obtain a semi-cured resin-impregnated plate with a smooth main surface.
＜半硬化樹脂の硬化率の測定＞
上記半硬化樹脂の硬化率は、示差走査熱量計を用いた測定によって決定した。まず、未硬化の状態の樹脂組成物２ｍｇを完全に硬化させた際に生じる単位質量当たりの発熱量Ｑを測定した。そして、半硬化樹脂含浸板から採取した半硬化樹脂のサンプル１０ｍｇを同様に昇温させて、完全に硬化させた際に生じる単位質量当たりの発熱量Ｒを求めた。半硬化物中に熱硬化性を有する成分がｃ（質量％）含有されているとして、下記式（１）によって半硬化樹脂含浸板に含浸している半硬化樹脂の硬化率が求めた。半硬化樹脂の硬化率は３２％であった。
半硬化樹脂の硬化率（％）＝｛１－[（Ｒ／ｃ）×１００]／Ｑ｝×１００ …式（１） <Measurement of curing rate of semi-cured resin>
The curing rate of the semi-cured resin was determined by measurement using a differential scanning calorimeter. First, the calorific value Q per unit mass generated when 2 mg of the uncured resin composition was completely cured was measured. Then, a 10 mg sample of the semi-cured resin taken from the semi-cured resin-impregnated plate was heated in the same manner, and the calorific value R generated per unit mass when completely cured was determined. Assuming that c (mass %) of a thermosetting component was contained in the semi-cured product, the curing rate of the semi-cured resin impregnated into the semi-cured resin-impregnated plate was determined using the following formula (1). The curing rate of the semi-cured resin was 32%.
Curing rate (%) of semi-cured resin = {1-[(R/c)×100]/Q}×100...Formula (1)
上記半硬化樹脂の硬化率は、示差走査熱量計を用いた測定によって決定した。まず、未硬化の状態の樹脂組成物２ｍｇを完全に硬化させた際に生じる単位質量当たりの発熱量Ｑを測定した。そして、半硬化樹脂含浸板から採取した半硬化樹脂のサンプル１０ｍｇを同様に昇温させて、完全に硬化させた際に生じる単位質量当たりの発熱量Ｒを求めた。半硬化物中に熱硬化性を有する成分がｃ（質量％）含有されているとして、下記式（１）によって半硬化樹脂含浸板に含浸している半硬化樹脂の硬化率が求めた。半硬化樹脂の硬化率は３２％であった。
半硬化樹脂の硬化率（％）＝｛１－[（Ｒ／ｃ）×１００]／Ｑ｝×１００ …式（１） <Measurement of curing rate of semi-cured resin>
The curing rate of the semi-cured resin was determined by measurement using a differential scanning calorimeter. First, the calorific value Q per unit mass generated when 2 mg of the uncured resin composition was completely cured was measured. Then, a 10 mg sample of the semi-cured resin taken from the semi-cured resin-impregnated plate was heated in the same manner, and the calorific value R generated per unit mass when completely cured was determined. Assuming that c (mass %) of a thermosetting component was contained in the semi-cured product, the curing rate of the semi-cured resin impregnated into the semi-cured resin-impregnated plate was determined using the following formula (1). The curing rate of the semi-cured resin was 32%.
Curing rate (%) of semi-cured resin = {1-[(R/c)×100]/Q}×100...Formula (1)
［積層体の製造］
上記半硬化樹脂含浸板（縦×横×厚さ＝５０ｍｍ×５０ｍｍ×０．４０ｍｍ）の一方の主面には、金属板として銅箔（縦×横×厚さ＝５０ｍｍ×５０ｍｍ×０．５ｍｍ）を四隅が一致するように積層し、もう一方の主面には、導電板として銅箔（縦×横×厚さ＝５０ｍｍ×５４ｍｍ×０．５ｍｍ）を、半硬化樹脂含浸板の主面の外に存在する部分の長さＬ０が４．０ｍｍとなるようにズラして積層し、１５０℃及び５ＭＰａの条件下で５分間加熱及び加圧し、更に２００℃及び大気圧の条件下で２時間加熱して、積層体を得た。上記加熱及び加圧に際して、半硬化樹脂含浸板の主面の外に存在する部分の下には、緩衝材として、ガスケットシート（株式会社キタコ製、厚さ：０．８ｍｍ）を設置してプレスを行った。なお、上記ガスケットシートは、両主面に対して、ポリイミドテープ（３Ｍ社製、厚さ：０．０５ｍｍ）を貼り付けることによって、保護して用いた。 [Manufacture of laminate]
One main surface of the semi-cured resin-impregnated plate (length x width x thickness = 50 mm x 50 mm x 0.40 mm) is coated with copper foil (length x width x thickness = 50 mm x 50 mm x 0.5 mm) as a metal plate. ) are stacked so that their four corners match, and on the other main surface, a copper foil (length x width x thickness = 50 mm x 54 mm x 0.5 mm) is placed as a conductive plate, and on the main surface of the semi-cured resin impregnated plate. The layers were stacked with an offset so that the length L0 of the part existing outside of the layer was 4.0 mm, heated and pressurized for 5 minutes at 150°C and 5 MPa, and further heated at 200°C and atmospheric pressure. A laminate was obtained by heating for 2 hours. During the above heating and pressurization, a gasket sheet (manufactured by Kitaco Co., Ltd., thickness: 0.8 mm) was placed as a cushioning material under the portion of the semi-cured resin-impregnated plate that existed outside the main surface. I did it. The gasket sheet was protected and used by attaching polyimide tape (manufactured by 3M, thickness: 0.05 mm) to both main surfaces.
上記半硬化樹脂含浸板（縦×横×厚さ＝５０ｍｍ×５０ｍｍ×０．４０ｍｍ）の一方の主面には、金属板として銅箔（縦×横×厚さ＝５０ｍｍ×５０ｍｍ×０．５ｍｍ）を四隅が一致するように積層し、もう一方の主面には、導電板として銅箔（縦×横×厚さ＝５０ｍｍ×５４ｍｍ×０．５ｍｍ）を、半硬化樹脂含浸板の主面の外に存在する部分の長さＬ０が４．０ｍｍとなるようにズラして積層し、１５０℃及び５ＭＰａの条件下で５分間加熱及び加圧し、更に２００℃及び大気圧の条件下で２時間加熱して、積層体を得た。上記加熱及び加圧に際して、半硬化樹脂含浸板の主面の外に存在する部分の下には、緩衝材として、ガスケットシート（株式会社キタコ製、厚さ：０．８ｍｍ）を設置してプレスを行った。なお、上記ガスケットシートは、両主面に対して、ポリイミドテープ（３Ｍ社製、厚さ：０．０５ｍｍ）を貼り付けることによって、保護して用いた。 [Manufacture of laminate]
One main surface of the semi-cured resin-impregnated plate (length x width x thickness = 50 mm x 50 mm x 0.40 mm) is coated with copper foil (length x width x thickness = 50 mm x 50 mm x 0.5 mm) as a metal plate. ) are stacked so that their four corners match, and on the other main surface, a copper foil (length x width x thickness = 50 mm x 54 mm x 0.5 mm) is placed as a conductive plate, and on the main surface of the semi-cured resin impregnated plate. The layers were stacked with an offset so that the length L0 of the part existing outside of the layer was 4.0 mm, heated and pressurized for 5 minutes at 150°C and 5 MPa, and further heated at 200°C and atmospheric pressure. A laminate was obtained by heating for 2 hours. During the above heating and pressurization, a gasket sheet (manufactured by Kitaco Co., Ltd., thickness: 0.8 mm) was placed as a cushioning material under the portion of the semi-cured resin-impregnated plate that existed outside the main surface. I did it. The gasket sheet was protected and used by attaching polyimide tape (manufactured by 3M, thickness: 0.05 mm) to both main surfaces.
［積層基板の製造］
得られた積層体の導電板側の主面上に、感光性レジスト材料を含む有機層を設け、露光及び現像することによってレジスト層を形成した。レジスト層を形成した後、エッチングによって導電板のうちレジスト層が設けられていない部分を除去し、その後、レジスト層を除去することによって、第１導電部を含む導電部によって構成される配線パターンを有する金属回路層を形成した。配線パターンは、図７に示すような形状とした。 [Manufacture of laminated substrates]
An organic layer containing a photosensitive resist material was provided on the main surface of the obtained laminate on the conductive plate side, and a resist layer was formed by exposure and development. After forming the resist layer, the part of the conductive plate where the resist layer is not provided is removed by etching, and then, by removing the resist layer, a wiring pattern formed by the conductive parts including the first conductive part is formed. A metal circuit layer was formed. The wiring pattern had a shape as shown in FIG.
得られた積層体の導電板側の主面上に、感光性レジスト材料を含む有機層を設け、露光及び現像することによってレジスト層を形成した。レジスト層を形成した後、エッチングによって導電板のうちレジスト層が設けられていない部分を除去し、その後、レジスト層を除去することによって、第１導電部を含む導電部によって構成される配線パターンを有する金属回路層を形成した。配線パターンは、図７に示すような形状とした。 [Manufacture of laminated substrates]
An organic layer containing a photosensitive resist material was provided on the main surface of the obtained laminate on the conductive plate side, and a resist layer was formed by exposure and development. After forming the resist layer, the part of the conductive plate where the resist layer is not provided is removed by etching, and then, by removing the resist layer, a wiring pattern formed by the conductive parts including the first conductive part is formed. A metal circuit layer was formed. The wiring pattern had a shape as shown in FIG.
［積層基板の形状評価］
得られた積層基板について、第１導電部の側面の傾斜角、第１導電部の反り量、第１導電部の厚さ、第１導電部の端部と樹脂充填板の端部との距離、第１導電部の端部と樹脂充填板との距離に対する第１導電部の厚さの比、並びに第１導電部と隣接する導電部との距離を測定した。結果を表１に示す。 [Evaluation of shape of laminated board]
Regarding the obtained laminated board, the inclination angle of the side surface of the first conductive part, the amount of warpage of the first conductive part, the thickness of the first conductive part, and the distance between the end of the first conductive part and the end of the resin filling plate The ratio of the thickness of the first conductive part to the distance between the end of the first conductive part and the resin filling plate, and the distance between the first conductive part and an adjacent conductive part were measured. The results are shown in Table 1.
得られた積層基板について、第１導電部の側面の傾斜角、第１導電部の反り量、第１導電部の厚さ、第１導電部の端部と樹脂充填板の端部との距離、第１導電部の端部と樹脂充填板との距離に対する第１導電部の厚さの比、並びに第１導電部と隣接する導電部との距離を測定した。結果を表１に示す。 [Evaluation of shape of laminated board]
Regarding the obtained laminated board, the inclination angle of the side surface of the first conductive part, the amount of warpage of the first conductive part, the thickness of the first conductive part, and the distance between the end of the first conductive part and the end of the resin filling plate The ratio of the thickness of the first conductive part to the distance between the end of the first conductive part and the resin filling plate, and the distance between the first conductive part and an adjacent conductive part were measured. The results are shown in Table 1.
［積層基板の絶縁性評価］
得られた積層基板について、超高圧耐電圧試験機（株式会社計測技研研究所製）及び測定治具（大西電子株式会社製）を用いて、第１導電部５２における絶縁破壊電圧を評価した。測定結果から、以下の基準で接着性を評価した。結果を表１に示す。
Ａ：絶縁破壊電圧が１０ｋＶ以上である。
Ｂ：絶縁破壊電圧が７ｋＶ以上１０ｋＶ未満である。
Ｃ：絶縁破壊電圧が７ｋＶ未満である、又は回路層間での沿面放電による導通が発生した。 [Insulation evaluation of laminated board]
Regarding the obtained laminated substrate, the dielectric breakdown voltage in the firstconductive portion 52 was evaluated using an ultra-high voltage withstand voltage tester (manufactured by Keizoku Giken Co., Ltd.) and a measurement jig (manufactured by Onishi Denshi Co., Ltd.). Based on the measurement results, adhesiveness was evaluated based on the following criteria. The results are shown in Table 1.
A: Dielectric breakdown voltage is 10 kV or more.
B: Dielectric breakdown voltage is 7 kV or more and less than 10 kV.
C: Dielectric breakdown voltage was less than 7 kV, or continuity occurred between circuit layers due to creeping discharge.
得られた積層基板について、超高圧耐電圧試験機（株式会社計測技研研究所製）及び測定治具（大西電子株式会社製）を用いて、第１導電部５２における絶縁破壊電圧を評価した。測定結果から、以下の基準で接着性を評価した。結果を表１に示す。
Ａ：絶縁破壊電圧が１０ｋＶ以上である。
Ｂ：絶縁破壊電圧が７ｋＶ以上１０ｋＶ未満である。
Ｃ：絶縁破壊電圧が７ｋＶ未満である、又は回路層間での沿面放電による導通が発生した。 [Insulation evaluation of laminated board]
Regarding the obtained laminated substrate, the dielectric breakdown voltage in the first
A: Dielectric breakdown voltage is 10 kV or more.
B: Dielectric breakdown voltage is 7 kV or more and less than 10 kV.
C: Dielectric breakdown voltage was less than 7 kV, or continuity occurred between circuit layers due to creeping discharge.
［積層基板の電力損失評価］
得られた積層基板について、導電部間の電力損失を計測した。図８を参考にすると、上記電力損失は、二つ設けられた第１導電部５２間に送電を行う際の、一方の第１導電部における突出部の端部から１ｍｍの箇所を起点として、もう一方の第１導電部５２における突出部の端部から１ｍｍの箇所を終点とする区間の電力を測定することによって、電力損失の大きさを決定した。第１導電部５２間は銅ワイヤーでワイヤーボンディングを行った。評価は、実施例１における電力損失を１とする相対評価とした。測定結果から、以下の基準で電力損失を評価した。結果を表１に示す。
Ａ：電力損失の相対値が１．０未満である。
Ｂ：電力損失の相対値が１．０以上１．５未満である。
Ｃ：電力損失の相対値が１．５以上である。 [Evaluation of power loss of multilayer substrate]
The power loss between the conductive parts was measured for the obtained laminated substrate. Referring to FIG. 8, when transmitting power between the two firstconductive parts 52, the power loss starts from a point 1 mm from the end of the protrusion in one of the first conductive parts. The magnitude of power loss was determined by measuring the power in a section of the other first conductive part 52 whose end point was 1 mm from the end of the protruding part. Wire bonding was performed between the first conductive parts 52 using copper wire. The evaluation was a relative evaluation with the power loss in Example 1 being 1. Based on the measurement results, power loss was evaluated using the following criteria. The results are shown in Table 1.
A: The relative value of power loss is less than 1.0.
B: The relative value of power loss is 1.0 or more and less than 1.5.
C: The relative value of power loss is 1.5 or more.
得られた積層基板について、導電部間の電力損失を計測した。図８を参考にすると、上記電力損失は、二つ設けられた第１導電部５２間に送電を行う際の、一方の第１導電部における突出部の端部から１ｍｍの箇所を起点として、もう一方の第１導電部５２における突出部の端部から１ｍｍの箇所を終点とする区間の電力を測定することによって、電力損失の大きさを決定した。第１導電部５２間は銅ワイヤーでワイヤーボンディングを行った。評価は、実施例１における電力損失を１とする相対評価とした。測定結果から、以下の基準で電力損失を評価した。結果を表１に示す。
Ａ：電力損失の相対値が１．０未満である。
Ｂ：電力損失の相対値が１．０以上１．５未満である。
Ｃ：電力損失の相対値が１．５以上である。 [Evaluation of power loss of multilayer substrate]
The power loss between the conductive parts was measured for the obtained laminated substrate. Referring to FIG. 8, when transmitting power between the two first
A: The relative value of power loss is less than 1.0.
B: The relative value of power loss is 1.0 or more and less than 1.5.
C: The relative value of power loss is 1.5 or more.
［積層基板の接着性評価］
得られた積層基板について、超音波探傷装置（株式会社日立パワーソリューションズ製、商品名：Ｆｉｎｅ ＳＡＴ Ｖ）を用いて、絶縁板である樹脂充填板と、樹脂充填板の主面上に設けられた金属回路層との接着度合いを、接着部分の樹脂充填板の主面の面積に対する面積比率に基づいて評価した。測定結果から、以下の基準で接着性を評価した。結果を表１に示す。なお、接着部分とは、超音波探傷装置測定時に、界面に空気層がある場合の超音波の反射波の強度に対し、２０％から５０％の強度の反射波の領域を示す。
Ａ：接着部分の面積比率が９０面積％以上である。
Ｂ：接着部分の面積比率が９０面積％未満である。 [Evaluation of adhesion of laminated substrates]
The obtained laminated board was examined using an ultrasonic flaw detection device (manufactured by Hitachi Power Solutions Co., Ltd., product name: Fine SAT V) to detect the resin-filled plate, which is an insulating plate, and the resin-filled plate provided on the main surface of the resin-filled plate. The degree of adhesion to the metal circuit layer was evaluated based on the area ratio of the adhesion portion to the area of the main surface of the resin-filled plate. Based on the measurement results, adhesiveness was evaluated based on the following criteria. The results are shown in Table 1. Note that the bonded portion refers to a region where the intensity of reflected waves is 20% to 50% of the intensity of reflected waves of ultrasonic waves when there is an air layer at the interface when measured by an ultrasonic flaw detector.
A: The area ratio of the bonded portion is 90 area % or more.
B: The area ratio of the bonded portion is less than 90% by area.
得られた積層基板について、超音波探傷装置（株式会社日立パワーソリューションズ製、商品名：Ｆｉｎｅ ＳＡＴ Ｖ）を用いて、絶縁板である樹脂充填板と、樹脂充填板の主面上に設けられた金属回路層との接着度合いを、接着部分の樹脂充填板の主面の面積に対する面積比率に基づいて評価した。測定結果から、以下の基準で接着性を評価した。結果を表１に示す。なお、接着部分とは、超音波探傷装置測定時に、界面に空気層がある場合の超音波の反射波の強度に対し、２０％から５０％の強度の反射波の領域を示す。
Ａ：接着部分の面積比率が９０面積％以上である。
Ｂ：接着部分の面積比率が９０面積％未満である。 [Evaluation of adhesion of laminated substrates]
The obtained laminated board was examined using an ultrasonic flaw detection device (manufactured by Hitachi Power Solutions Co., Ltd., product name: Fine SAT V) to detect the resin-filled plate, which is an insulating plate, and the resin-filled plate provided on the main surface of the resin-filled plate. The degree of adhesion to the metal circuit layer was evaluated based on the area ratio of the adhesion portion to the area of the main surface of the resin-filled plate. Based on the measurement results, adhesiveness was evaluated based on the following criteria. The results are shown in Table 1. Note that the bonded portion refers to a region where the intensity of reflected waves is 20% to 50% of the intensity of reflected waves of ultrasonic waves when there is an air layer at the interface when measured by an ultrasonic flaw detector.
A: The area ratio of the bonded portion is 90 area % or more.
B: The area ratio of the bonded portion is less than 90% by area.
（実施例２）
導電板の半硬化樹脂含浸板の主面の外に存在する部分の長さＬ０と、第一導電部の厚さＴと、を表１に記載のとおり変更したこと以外は、実施例１と同様にして、積層体及び積層基板を調製した。得られた積層基板における第１導電部の側面の傾斜角等について、実施例１と同様に測定した。また、得られた積層基板についての性能評価について、実施例１と同様に行った。結果を表１に示す。 (Example 2)
Example 1 except that the length L0 of the portion of the conductive plate existing outside the main surface of the semi-cured resin-impregnated plate and the thickness T of the first conductive part were changed as shown in Table 1. A laminate and a laminate substrate were prepared in the same manner as above. The inclination angle of the side surface of the first conductive part in the obtained multilayer substrate was measured in the same manner as in Example 1. Furthermore, performance evaluation of the obtained multilayer substrate was performed in the same manner as in Example 1. The results are shown in Table 1.
導電板の半硬化樹脂含浸板の主面の外に存在する部分の長さＬ０と、第一導電部の厚さＴと、を表１に記載のとおり変更したこと以外は、実施例１と同様にして、積層体及び積層基板を調製した。得られた積層基板における第１導電部の側面の傾斜角等について、実施例１と同様に測定した。また、得られた積層基板についての性能評価について、実施例１と同様に行った。結果を表１に示す。 (Example 2)
Example 1 except that the length L0 of the portion of the conductive plate existing outside the main surface of the semi-cured resin-impregnated plate and the thickness T of the first conductive part were changed as shown in Table 1. A laminate and a laminate substrate were prepared in the same manner as above. The inclination angle of the side surface of the first conductive part in the obtained multilayer substrate was measured in the same manner as in Example 1. Furthermore, performance evaluation of the obtained multilayer substrate was performed in the same manner as in Example 1. The results are shown in Table 1.
（実施例３）
積層体作製時の加熱温度と、導電板の半硬化樹脂含浸板の主面の外に存在する部分の長さＬ０と、第一導電部の厚さＴと、を表１に記載のとおり変更したこと以外は、実施例１と同様にして、積層体及び積層基板を調製した。得られた積層基板における第１導電部の側面の傾斜角等について、実施例１と同様に測定した。また、得られた積層基板についての性能評価について、実施例１と同様に行った。結果を表１に示す。 (Example 3)
The heating temperature during the production of the laminate, the length L0 of the portion of the conductive plate that exists outside the main surface of the semi-cured resin-impregnated plate, and the thickness T of the first conductive part are as shown in Table 1. A laminate and a laminate substrate were prepared in the same manner as in Example 1 except for the following changes. The inclination angle of the side surface of the first conductive part in the obtained multilayer substrate was measured in the same manner as in Example 1. Furthermore, performance evaluation of the obtained multilayer substrate was performed in the same manner as in Example 1. The results are shown in Table 1.
積層体作製時の加熱温度と、導電板の半硬化樹脂含浸板の主面の外に存在する部分の長さＬ０と、第一導電部の厚さＴと、を表１に記載のとおり変更したこと以外は、実施例１と同様にして、積層体及び積層基板を調製した。得られた積層基板における第１導電部の側面の傾斜角等について、実施例１と同様に測定した。また、得られた積層基板についての性能評価について、実施例１と同様に行った。結果を表１に示す。 (Example 3)
The heating temperature during the production of the laminate, the length L0 of the portion of the conductive plate that exists outside the main surface of the semi-cured resin-impregnated plate, and the thickness T of the first conductive part are as shown in Table 1. A laminate and a laminate substrate were prepared in the same manner as in Example 1 except for the following changes. The inclination angle of the side surface of the first conductive part in the obtained multilayer substrate was measured in the same manner as in Example 1. Furthermore, performance evaluation of the obtained multilayer substrate was performed in the same manner as in Example 1. The results are shown in Table 1.
（実施例４）
導電板の半硬化樹脂含浸板の主面の外に存在する部分の長さＬ０と、第一導電部の厚さＴと、を表１に記載のとおり変更したこと以外は、実施例１と同様にして、積層体及び積層基板を調製した。得られた積層基板における第１導電部の側面の傾斜角等について、実施例１と同様に測定した。また、得られた積層基板についての性能評価について、実施例１と同様に行った。結果を表１に示す。 (Example 4)
Example 1 except that the length L0 of the portion of the conductive plate existing outside the main surface of the semi-cured resin-impregnated plate and the thickness T of the first conductive part were changed as shown in Table 1. A laminate and a laminate substrate were prepared in the same manner as above. The inclination angle of the side surface of the first conductive part in the obtained multilayer substrate was measured in the same manner as in Example 1. Furthermore, performance evaluation of the obtained multilayer substrate was performed in the same manner as in Example 1. The results are shown in Table 1.
導電板の半硬化樹脂含浸板の主面の外に存在する部分の長さＬ０と、第一導電部の厚さＴと、を表１に記載のとおり変更したこと以外は、実施例１と同様にして、積層体及び積層基板を調製した。得られた積層基板における第１導電部の側面の傾斜角等について、実施例１と同様に測定した。また、得られた積層基板についての性能評価について、実施例１と同様に行った。結果を表１に示す。 (Example 4)
Example 1 except that the length L0 of the portion of the conductive plate existing outside the main surface of the semi-cured resin-impregnated plate and the thickness T of the first conductive part were changed as shown in Table 1. A laminate and a laminate substrate were prepared in the same manner as above. The inclination angle of the side surface of the first conductive part in the obtained multilayer substrate was measured in the same manner as in Example 1. Furthermore, performance evaluation of the obtained multilayer substrate was performed in the same manner as in Example 1. The results are shown in Table 1.
（実施例５）
積層体の製造において緩衝材を用いなかったこと以外は、実施例１と同様にして、積層体及び積層基板を調製した。得られた積層基板における第１導電部の側面の傾斜角等について、実施例１と同様に測定した。また、得られた積層基板についての性能評価について、実施例１と同様に行った。結果を表１に示す。 (Example 5)
A laminate and a laminate substrate were prepared in the same manner as in Example 1, except that no cushioning material was used in manufacturing the laminate. The inclination angle of the side surface of the first conductive part in the obtained multilayer substrate was measured in the same manner as in Example 1. Furthermore, performance evaluation of the obtained multilayer substrate was performed in the same manner as in Example 1. The results are shown in Table 1.
積層体の製造において緩衝材を用いなかったこと以外は、実施例１と同様にして、積層体及び積層基板を調製した。得られた積層基板における第１導電部の側面の傾斜角等について、実施例１と同様に測定した。また、得られた積層基板についての性能評価について、実施例１と同様に行った。結果を表１に示す。 (Example 5)
A laminate and a laminate substrate were prepared in the same manner as in Example 1, except that no cushioning material was used in manufacturing the laminate. The inclination angle of the side surface of the first conductive part in the obtained multilayer substrate was measured in the same manner as in Example 1. Furthermore, performance evaluation of the obtained multilayer substrate was performed in the same manner as in Example 1. The results are shown in Table 1.
（比較例１）
半硬化樹脂含浸板に変えて窒化ケイ素焼結板を用い、導電板の半硬化樹脂含浸板の主面の外に存在する部分の長さＬ０を表１に記載のとおり変更し、接合時には上下から治具で固定し、導電板と窒化ケイ素焼結板との間にろう材を塗布し、７９０℃に加熱することで接合したこと以外は、実施例１と同様にして、積層体及び積層基板を調製した。得られた積層基板における第１導電部の側面の傾斜角等について、実施例１と同様に測定した。また、得られた積層基板についての性能評価について、実施例１と同様に行った。結果を表１に示す。 (Comparative example 1)
A sintered silicon nitride plate was used instead of the semi-cured resin-impregnated plate, and the length L0 of the portion of the conductive plate existing outside the main surface of the semi-cured resin-impregnated plate was changed as shown in Table 1. A laminate and a A laminated substrate was prepared. The inclination angle of the side surface of the first conductive part in the obtained multilayer substrate was measured in the same manner as in Example 1. Furthermore, performance evaluation of the obtained multilayer substrate was performed in the same manner as in Example 1. The results are shown in Table 1.
半硬化樹脂含浸板に変えて窒化ケイ素焼結板を用い、導電板の半硬化樹脂含浸板の主面の外に存在する部分の長さＬ０を表１に記載のとおり変更し、接合時には上下から治具で固定し、導電板と窒化ケイ素焼結板との間にろう材を塗布し、７９０℃に加熱することで接合したこと以外は、実施例１と同様にして、積層体及び積層基板を調製した。得られた積層基板における第１導電部の側面の傾斜角等について、実施例１と同様に測定した。また、得られた積層基板についての性能評価について、実施例１と同様に行った。結果を表１に示す。 (Comparative example 1)
A sintered silicon nitride plate was used instead of the semi-cured resin-impregnated plate, and the length L0 of the portion of the conductive plate existing outside the main surface of the semi-cured resin-impregnated plate was changed as shown in Table 1. A laminate and a A laminated substrate was prepared. The inclination angle of the side surface of the first conductive part in the obtained multilayer substrate was measured in the same manner as in Example 1. Furthermore, performance evaluation of the obtained multilayer substrate was performed in the same manner as in Example 1. The results are shown in Table 1.
（比較例２）
導電板の半硬化樹脂含浸板の主面の外に存在する部分の長さＬ０と、第一導電部の厚さＴと、を変更したこと以外は、実施例１と同様にして、積層体及び積層基板を調製した。得られた積層基板における第１導電部の側面の傾斜角等について、実施例１と同様に測定した。また、得られた積層基板についての性能評価について、実施例１と同様に行った。なお、電力損失測定においては、樹脂充填板の主面の外の方向に、４．０ｍｍ分の距離がでるようはんだを用いてＣｕ板を接合した後に評価を行った。結果を表１に示す。 (Comparative example 2)
Lamination was carried out in the same manner as in Example 1, except that the length L0 of the portion of the conductive plate existing outside the main surface of the semi-cured resin-impregnated plate and the thickness T of the first conductive part were changed. A body and a laminated substrate were prepared. The inclination angle of the side surface of the first conductive part in the obtained multilayer substrate was measured in the same manner as in Example 1. Furthermore, performance evaluation of the obtained multilayer substrate was performed in the same manner as in Example 1. In addition, in the power loss measurement, evaluation was performed after the Cu plate was joined using solder so that a distance of 4.0 mm appeared in the direction outside the main surface of the resin-filled plate. The results are shown in Table 1.
導電板の半硬化樹脂含浸板の主面の外に存在する部分の長さＬ０と、第一導電部の厚さＴと、を変更したこと以外は、実施例１と同様にして、積層体及び積層基板を調製した。得られた積層基板における第１導電部の側面の傾斜角等について、実施例１と同様に測定した。また、得られた積層基板についての性能評価について、実施例１と同様に行った。なお、電力損失測定においては、樹脂充填板の主面の外の方向に、４．０ｍｍ分の距離がでるようはんだを用いてＣｕ板を接合した後に評価を行った。結果を表１に示す。 (Comparative example 2)
Lamination was carried out in the same manner as in Example 1, except that the length L0 of the portion of the conductive plate existing outside the main surface of the semi-cured resin-impregnated plate and the thickness T of the first conductive part were changed. A body and a laminated substrate were prepared. The inclination angle of the side surface of the first conductive part in the obtained multilayer substrate was measured in the same manner as in Example 1. Furthermore, performance evaluation of the obtained multilayer substrate was performed in the same manner as in Example 1. In addition, in the power loss measurement, evaluation was performed after the Cu plate was joined using solder so that a distance of 4.0 mm appeared in the direction outside the main surface of the resin-filled plate. The results are shown in Table 1.
表１に示されるとおり、実施例１～４のように請求項に係る構成を充足することで、得られる積層板は、優れた絶縁性と回路における電力損失の抑制とを両立することができることが確認された。実施例４に示されるとおり、突出部が長く、回路の経路が長い場合であっても、電力損失が実用上十分な電力損失に抑制されることが確認された。
As shown in Table 1, by satisfying the claimed configurations as in Examples 1 to 4, the obtained laminate can have both excellent insulation properties and suppression of power loss in the circuit. was confirmed. As shown in Example 4, it was confirmed that even when the protrusion was long and the circuit path was long, the power loss was suppressed to a practically sufficient power loss.
本開示によれば、絶縁板上に設けられた金属回路と上記絶縁板の主面よりも外側に突出した突出部とが一体形成された、絶縁板と金属回路との接着性に優れる積層基板を製造する方法を提供できる。本開示によればまた、絶縁性及び回路における電力損失が低く抑制された積層基板を提供できる。本開示によればまた、上述のような積層基板の製造に好適な積層体及びその製造方法を提供できる。
According to the present disclosure, a laminated substrate with excellent adhesiveness between the insulating plate and the metal circuit, in which a metal circuit provided on the insulating plate and a protruding portion protruding outward from the main surface of the insulating plate are integrally formed. can provide a method for manufacturing. According to the present disclosure, it is also possible to provide a multilayer substrate with low insulation properties and low power loss in circuits. According to the present disclosure, it is also possible to provide a laminate suitable for manufacturing a laminate substrate as described above and a method for manufacturing the same.
２０…金属板、３０…半硬化樹脂含浸板、４０…樹脂充填板、５０…導電板、５２…第１導電部、６０…金属回路層、６２…第２導電部、１００…中間体、１０１…積層体、１０２，１０３…積層基板。
20...Metal plate, 30...Semi-cured resin impregnated plate, 40...Resin filled plate, 50...Conductive plate, 52...First conductive part, 60...Metal circuit layer, 62...Second conductive part, 100... Intermediate, 101 ...Laminated body, 102, 103... Laminated substrate.
20...Metal plate, 30...Semi-cured resin impregnated plate, 40...Resin filled plate, 50...Conductive plate, 52...First conductive part, 60...Metal circuit layer, 62...Second conductive part, 100... Intermediate, 101 ...Laminated body, 102, 103... Laminated substrate.
Claims (14)
- 金属板、半硬化樹脂含浸板、及び導電板をこの順に積層することと、
前記半硬化樹脂含浸板を２００℃以下の温度で加熱処理し半硬化樹脂を硬化させることによって、前記半硬化樹脂含浸板の硬化物と、前記金属板及び前記導電板と、を接着して積層体を得ることと、を有し、
前記導電板は、上面視において、前記半硬化樹脂含浸板上に存在する部分と、前記半硬化樹脂含浸板の主面の外に存在する部分とを有する、積層体の製造方法。 Laminating a metal plate, a semi-hardened resin impregnated plate, and a conductive plate in this order,
By heat-treating the semi-cured resin-impregnated plate at a temperature of 200° C. or lower to cure the semi-cured resin, the cured product of the semi-cured resin-impregnated plate, the metal plate, and the conductive plate are bonded and laminated. obtaining a body, and having;
The method for manufacturing a laminate, wherein the conductive plate has a portion existing on the semi-cured resin-impregnated plate and a portion existing outside the main surface of the semi-cured resin-impregnated plate when viewed from above. - 前記導電板の、前記半硬化樹脂含浸板の主面の外に存在する部分の長さが２．０ｍｍ以上である、請求項１に記載の製造方法。 The manufacturing method according to claim 1, wherein the length of the portion of the conductive plate that exists outside the main surface of the semi-cured resin-impregnated plate is 2.0 mm or more.
- 金属板、半硬化樹脂含浸板、及び導電板をこの順に積層することと、
前記半硬化樹脂含浸板を２００℃以下の温度で加熱処理し半硬化樹脂を硬化させることによって、前記半硬化樹脂含浸板の硬化物と、前記金属板及び前記導電板と、を接着して積層体を得ることと、
前記積層体の前記導電板に配線パターンを形成することと、を有し、
前記導電板は、上面視において、前記半硬化樹脂含浸板上に存在する基板部と、前記半硬化樹脂含浸板の主面の外に存在する部分と、を有する、積層基板の製造方法。 Laminating a metal plate, a semi-hardened resin impregnated plate, and a conductive plate in this order,
By heat-treating the semi-cured resin-impregnated plate at a temperature of 200° C. or lower to cure the semi-cured resin, the cured product of the semi-cured resin-impregnated plate, the metal plate, and the conductive plate are bonded and laminated. getting a body and
forming a wiring pattern on the conductive plate of the laminate;
The method for manufacturing a laminated substrate, wherein the conductive plate has a substrate portion that exists on the semi-cured resin-impregnated plate and a portion that exists outside the main surface of the semi-cured resin-impregnated plate when viewed from above. - 前記導電板の、前記半硬化樹脂含浸板の主面の外に存在する部分の長さが２．０ｍｍ以上である、請求項３に記載の製造方法。 The manufacturing method according to claim 3, wherein the length of the portion of the conductive plate that exists outside the main surface of the semi-cured resin-impregnated plate is 2.0 mm or more.
- 金属板と、前記金属板上に設けられた樹脂充填板と、前記樹脂充填板上に設けられた１又は２以上の導電部と、を有し、
１又は２以上の前記導電部の少なくとも１つは、上面視において、前記樹脂充填板上に存在する基板部と、前記樹脂充填板の主面の外まで突出した突出部と、を有する第１導電部であり、
前記第１導電部の側面が積層方向に対して傾斜している、積層基板。 comprising a metal plate, a resin filling plate provided on the metal plate, and one or more conductive parts provided on the resin filling plate,
At least one of the one or more conductive parts includes a substrate part existing on the resin filling plate and a protruding part protruding to the outside of the main surface of the resin filling plate when viewed from above. is a conductive part,
A laminated substrate, wherein a side surface of the first conductive part is inclined with respect to a lamination direction. - 前記突出部の、前記第１導電部から前記金属板へ向かう方向へのたわみ量である反り量が０．５０ｍｍ未満である、請求項５に記載の積層基板。 The laminated substrate according to claim 5, wherein the amount of warpage of the protruding portion, which is the amount of deflection in the direction from the first conductive portion toward the metal plate, is less than 0.50 mm.
- 前記第１導電部の厚さが１．５ｍｍ以下である、請求項５又は６に記載の積層基板。 The laminated substrate according to claim 5 or 6, wherein the first conductive portion has a thickness of 1.5 mm or less.
- 前記突出部の長さが２．０ｍｍ以上である、請求項５又は６に記載の積層基板。 The laminated substrate according to claim 5 or 6, wherein the length of the protrusion is 2.0 mm or more.
- 前記第１導電部の側面の傾斜角は、前記樹脂充填板の主面が伸びる方向に対して３５～８５°である、請求項５又は６に記載の積層基板。 The laminated substrate according to claim 5 or 6, wherein the inclination angle of the side surface of the first conductive part is 35 to 85 degrees with respect to the direction in which the main surface of the resin filling plate extends.
- 前記第１導電部の厚さに対する、前記突出部の長さの比が５０．０より小さい、請求項５又は６に記載の積層基板。 The laminated substrate according to claim 5 or 6, wherein the ratio of the length of the protruding portion to the thickness of the first conductive portion is smaller than 50.0.
- 前記第１導電部と、前記第１導電部と隣接する導電部との距離の最小値が２．０ｍｍ以下である、請求項５又は６に記載の積層基板。 The laminated substrate according to claim 5 or 6, wherein a minimum distance between the first conductive part and a conductive part adjacent to the first conductive part is 2.0 mm or less.
- 金属板と、前記金属板上に設けられた樹脂充填板と、前記樹脂充填板上に設けられた導電板と、を有し、
前記導電板は、上面視において、前記樹脂充填板上に存在する基板部と、前記樹脂充填板の主面の外に存在するはみ出し部分と、を有する、積層体。 comprising a metal plate, a resin filling plate provided on the metal plate, and a conductive plate provided on the resin filling plate,
The conductive plate is a laminate, in which the conductive plate has a substrate portion existing on the resin filling plate and a protruding portion existing outside the main surface of the resin filling plate when viewed from above. - 前記はみ出し部分の、前記導電板から前記金属板へ向かう方向へのたわみ量である反り量が０．３０ｍｍ未満である、請求項１２に記載の積層体。 The laminate according to claim 12, wherein the amount of warpage of the protruding portion in the direction from the conductive plate toward the metal plate is less than 0.30 mm.
- 前記はみ出し部分の長さが２．０ｍｍ以上である、請求項１２又は１３に記載の積層体。
The laminate according to claim 12 or 13, wherein the length of the protruding portion is 2.0 mm or more.
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| WO2014196496A1 (en) * | 2013-06-03 | 2014-12-11 | 電気化学工業株式会社 | Resin-impregnated boron nitride sintered body and use for same |
| JP2016103611A (en) * | 2014-11-28 | 2016-06-02 | デンカ株式会社 | Boron nitride resin composite circuit board |
| JP2022081849A (en) * | 2020-11-20 | 2022-06-01 | 三菱電機株式会社 | Semiconductor device for electric power and manufacturing method for semiconductor device for electric power |
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| WO2014196496A1 (en) * | 2013-06-03 | 2014-12-11 | 電気化学工業株式会社 | Resin-impregnated boron nitride sintered body and use for same |
| JP2016103611A (en) * | 2014-11-28 | 2016-06-02 | デンカ株式会社 | Boron nitride resin composite circuit board |
| JP2022081849A (en) * | 2020-11-20 | 2022-06-01 | 三菱電機株式会社 | Semiconductor device for electric power and manufacturing method for semiconductor device for electric power |
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