WO2024041045A1 - Heating device and preparation method therefor - Google Patents

Heating device and preparation method therefor Download PDF

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Publication number
WO2024041045A1
WO2024041045A1 PCT/CN2023/094429 CN2023094429W WO2024041045A1 WO 2024041045 A1 WO2024041045 A1 WO 2024041045A1 CN 2023094429 W CN2023094429 W CN 2023094429W WO 2024041045 A1 WO2024041045 A1 WO 2024041045A1
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WIPO (PCT)
Prior art keywords
infrared coating
heating device
preparing
heating
heating layer
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PCT/CN2023/094429
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French (fr)
Chinese (zh)
Inventor
刘宇嵘
谢方
李洪
李日红
周宏明
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海南摩尔兄弟科技有限公司
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Publication of WO2024041045A1 publication Critical patent/WO2024041045A1/en

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/40—Heating elements having the shape of rods or tubes
    • A—HUMAN NECESSITIES
    • A24—TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
    • A24F—SMOKERS' REQUISITES; MATCH BOXES; SIMULATED SMOKING DEVICES
    • A24F40/00—Electrically operated smoking devices; Component parts thereof; Manufacture thereof; Maintenance or testing thereof; Charging means specially adapted therefor
    • A24F40/40—Constructional details, e.g. connection of cartridges and battery parts
    • A—HUMAN NECESSITIES
    • A24—TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
    • A24F—SMOKERS' REQUISITES; MATCH BOXES; SIMULATED SMOKING DEVICES
    • A24F40/00—Electrically operated smoking devices; Component parts thereof; Manufacture thereof; Maintenance or testing thereof; Charging means specially adapted therefor
    • A24F40/40—Constructional details, e.g. connection of cartridges and battery parts
    • A24F40/46—Shape or structure of electric heating means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/02—Details

Definitions

  • the present application relates to the technical field of smoking articles, and in particular to a heating device and a preparation method thereof.
  • the existing low-temperature heating and non-burning smoking device includes a base body, an infrared coating located on the surface of the base body, and a conductive line located on the surface of the infrared coating. After being energized, the conductive circuit generates heat and conducts the heat to the infrared coating. The infrared rays generated by heating of the infrared coating can penetrate the base and heat the smoking article in the base.
  • screen printing thick film technology is basically used when preparing conductive circuits, that is, using screen printing method to transfer materials such as conductor paste, resistor paste or dielectric paste to the infrared coating, and then sintering at high temperature.
  • this application provides a method for preparing a heating device, which includes the following steps:
  • a heating layer is prepared on the outer surface of the infrared coating.
  • the heating layer is a resistive film and completely covers the infrared coating.
  • the method for preparing the heating layer includes at least one of magnetron sputtering, spraying, multi-arc ion plating, and evaporation.
  • the method of preparing the infrared coating includes at least one of screen printing, spray coating, and inkjet printing.
  • the preparation method further includes:
  • a transition layer is prepared on the outer surface of the infrared coating.
  • the method of preparing the transition layer includes at least one of screen printing, spray coating, and inkjet printing.
  • a heating device including:
  • a base body having a cavity
  • a heating layer is connected to the outer surface of the infrared coating.
  • the heating layer is a resistive film and completely covers the infrared coating.
  • the material of the heating layer includes at least one of silver palladium, chromium, silver, tungsten, silver palladium alloy, chromium alloy, silver alloy and tungsten alloy.
  • the base body has a tubular structure, and the base body is made of at least one of quartz, borosilicate glass, crystallized glass, and transparent ceramics.
  • the heating device further includes:
  • a transition layer is located between the infrared coating and the heating layer.
  • the transition layer is made of at least one of glass glaze, silicon dioxide and alumina. kind.
  • the heating layer is prepared on the outer surface of the infrared coating.
  • the heating layer is a resistive film.
  • the heating layer functions as a conductive circuit. Since the heating layer completely covers the infrared coating, Compared with the conductive lines prepared by the prior art, the heating layer prepared by this application has better temperature field uniformity, thickness uniformity and position accuracy.
  • Figure 1 is a schematic structural diagram of a heating device provided by the first embodiment of the present application.
  • Figure 2 is a partial cross-sectional view along II-II of the base body of the heating device shown in Figure 1;
  • Figure 3 is a cross-sectional view after preparing an infrared coating on the outer surface of the substrate shown in Figure 2;
  • Figure 4 is a cross-sectional view of the heating device obtained after preparing a heating layer on the outer surface of the infrared coating shown in Figure 3;
  • Figure 5 is a schematic structural diagram of a heating device provided by the first embodiment of the present application.
  • Figure 6 is a partial cross-sectional view along VI-VI of the base body and the infrared coating of the heating device shown in Figure 5;
  • Figure 7 is a cross-sectional view after preparing a transition layer on the outer surface of the infrared coating shown in Figure 6;
  • FIG. 8 is a cross-sectional view of the heating device obtained after preparing a heating layer on the outer surface of the transition layer shown in FIG. 7 .
  • a first embodiment of the present application provides a method for preparing a heating device, which includes the following steps:
  • step S11 please also refer to FIG. 2 to provide the base 10.
  • the base body 10 has a tubular structure.
  • the base 10 may be a round tube.
  • the material of the substrate 10 includes at least one of quartz, borosilicate glass, crystallized glass, and transparent ceramics.
  • the material of the base 10 may also be other substances. This application does not limit the material of the base 10 .
  • the substrate 10 can withstand high temperatures exceeding 800°C. That is, the melting point of the substrate 10 is greater than 800°C.
  • the melting point of the substrate 10 is greater than 900°C, 1000°C, 1100°C, 1200°C, 1300°C, 1400°C, 1500°C, 1600°C, 1700°C, 1800°C, 1900°C or 2000°C.
  • the base body 10 has a cavity 11 .
  • Smoking articles can be stored in the chamber 11 .
  • the smoking article may be tobacco.
  • Step S12 please refer to FIG. 3 , prepare an infrared coating 20 on the outer surface of the substrate 10 .
  • the infrared coating 20 can be prepared by screen printing, spraying or inkjet printing. It can be understood that the infrared coating 20 is connected to the outer surface of the base 10 .
  • the infrared coating 20 When the infrared coating 20 is heated, the temperature of the infrared coating 20 increases and has thermal energy.
  • the infrared coating 20 can use the thermal energy in the form of infrared radiation to heat the tobacco products in the chamber 11 .
  • the infrared coating 20 is usually selected from a material with high infrared emissivity, optionally, for example, a material containing tin oxide.
  • a material containing tin oxide As a choice of this material, antimony (Sb) doped tin oxide is preferred.
  • Sb antimony
  • tin oxide's carriers mainly come from crystal defects, namely oxygen vacancies and electrons provided by doping impurities.
  • SnO 2 is doped with Sb and other elements, its conductivity is significantly improved, forming an n-type semiconductor.
  • the semiconductor doped with Sb SnO 2 has good conductivity and stable performance, and is called ATO (Antimony Doped Tin Oxide).
  • SnO 2 doping materials include: F, Ni, Mn, Mo, Ce, Cu, Zn, Ta, Si, N, P, In, Pd, Bi, etc. That is, the materials of the infrared coating 20 also include fluorine doped tin oxide, nickel doped tin oxide, manganese doped tin oxide, molybdenum doped tin oxide, cerium doped tin oxide, copper doped tin oxide, zinc doped Tin oxide, tantalum doped tin oxide, silicon doped tin oxide, nitrogen doped tin oxide, phosphorus doped tin oxide, indium doped tin oxide, palladium doped tin oxide and bismuth doped tin oxide, etc.
  • Step S13 please refer to FIG. 4.
  • a heating layer 30 is prepared on the outer surface of the infrared coating 20 to obtain the heating device 100.
  • the heating layer 30 can be prepared by magnetron sputtering, spraying, multi-arc ion plating or evaporation. It can be understood that the heating layer 30 is connected to the outer surface of the infrared coating 20 .
  • the heating layer 30 is a resistive film and completely covers the infrared coating 20 . It can be understood that the heating layer 30 has a whole layer structure.
  • the heating layer 30 is made of at least one of silver palladium (AgPd), chromium (Cr), silver (Ag), tungsten (W), silver palladium alloy, chromium alloy, silver alloy and tungsten alloy. A sort of.
  • the heating layer 30 may be made of other conductive substances and certain heat-resistant properties. This application does not limit the material of the heating layer 30 .
  • the heating layer 30 has excellent thermal stability and high reflectivity, and the thermal expansion coefficient of the heating layer 30 matches the thermal expansion coefficient of the substrate 10 and the infrared coating 20. When the infrared coating When the layer 20 generates heat, the structure of the heating layer 30 is stable and no obvious cracks or falling off will occur.
  • the heating layer 30 functions as a conductive circuit.
  • the infrared coating 20 after being energized generates heat and conducts the heat to the infrared coating 20.
  • the infrared coating 20 converts the heat into infrared.
  • the tobacco product in the chamber 11 is heated in the form of radiation.
  • the preparation method provided by the first embodiment of the present application prepares the heating layer 30 on the outer surface of the infrared coating 20.
  • the heating layer 30 is a resistive film, and the heating layer 30 functions as a conductive circuit.
  • the heating layer 30 completely covers the infrared coating 20.
  • the heating layer 30 prepared in the first embodiment of the present application has higher temperature field uniformity, thickness uniformity and Position accuracy.
  • the heating layer 30 since the heating layer 30 has a whole-layer structure and completely covers the infrared coating 20, the heating layer 30 can reduce the energy radiated outward by the infrared coating 20, thereby improving the efficiency of the infrared coating. 20% energy utilization.
  • the first embodiment of the present application also provides a heating device 100.
  • the heating device 100 includes a base 10, an infrared coating 20 and a heating layer 30.
  • the base body 10 has a tubular structure.
  • the base 10 may be a round tube.
  • the material of the substrate 10 includes at least one of quartz, borosilicate glass, crystallized glass, and transparent ceramics. in another In one embodiment, the material of the base 10 may also be other substances. This application does not limit the material of the base 10 .
  • the substrate 10 can withstand high temperatures exceeding 800°C. That is, the melting point of the substrate 10 is greater than 800°C.
  • the melting point of the substrate 10 is greater than 900°C, 1000°C, 1100°C, 1200°C, 1300°C, 1400°C, 1500°C, 1600°C, 1700°C, 1800°C, 1900°C or 2000°C.
  • the base body 10 has a cavity 11 .
  • Smoking articles can be stored in the chamber 11 .
  • the smoking article may be tobacco.
  • the infrared coating 20 is connected to the outer surface of the base 10 . When the infrared coating 20 is heated, the temperature of the infrared coating 20 increases and has thermal energy. The infrared coating 20 can use the thermal energy in the form of infrared radiation to heat the tobacco products in the chamber 11 .
  • the infrared coating 20 is usually made of materials with high infrared emissivity, optionally, for example, materials containing tin oxide.
  • antimony-doped tin oxide is preferred.
  • tin oxide's carriers mainly come from crystal defects, namely oxygen vacancies and electrons provided by doping impurities.
  • SnO 2 is doped with Sb and other elements, its conductivity is significantly improved, forming an n-type semiconductor.
  • the semiconductor doped with Sb SnO 2 has good conductivity and stable performance, and is called ATO (Antimony Doped Tin Oxide).
  • SnO doping materials include: fluorine (F), nickel (Ni), manganese (Mn), molybdenum (Mo), cerium (Ce), copper (Cu), zinc (Zn), tantalum (Ta) , silicon (Si), nitrogen (N), phosphorus (P), indium (In), palladium (Pd) and bismuth (Bi), etc.
  • the materials of the infrared coating 20 also include fluorine doped tin oxide, nickel doped tin oxide, manganese doped tin oxide, molybdenum doped tin oxide, cerium doped tin oxide, copper doped tin oxide, zinc doped Tin oxide, tantalum doped tin oxide, silicon doped tin oxide, nitrogen doped tin oxide, phosphorus doped tin oxide, indium doped tin oxide, palladium doped tin oxide and bismuth doped tin oxide, etc.
  • the heating layer 30 is connected to the outer surface of the infrared coating 20 .
  • the heating layer 30 is a resistive film and completely covers the infrared coating 20 . It can be understood that the heating layer 30 has a whole layer structure.
  • the heating layer 30 is made of at least one of silver palladium (AgPd), chromium (Cr), silver (Ag), tungsten (W), silver palladium alloy, chromium alloy, silver alloy and tungsten alloy. A sort of.
  • the heating layer 30 may be made of other conductive substances and certain heat-resistant properties. This application does not limit the material of the heating layer 30 .
  • the heating layer 30 has excellent thermal stability and high reflectivity, and the thermal expansion coefficient of the heating layer 30 matches the thermal expansion coefficient of the substrate 10 and the infrared coating 20.
  • the infrared coating Layer 20 generates heat , the structure of the heating layer 30 is stable and no obvious cracks or falling off will occur.
  • the heating layer 30 functions as a conductive circuit.
  • the infrared coating 20 after being energized generates heat and conducts the heat to the infrared coating 20.
  • the infrared coating 20 converts the heat into infrared.
  • the tobacco product in the chamber 11 is heated in the form of radiation.
  • the heating layer 30 in the heating device 100 provided in the first embodiment of the present application is connected to the outer surface of the infrared coating 20.
  • the heating layer 30 is a resistive film, and the heating layer 30 functions as a conductor. Because the heating layer 30 completely covers the infrared coating 20, the heating layer 30 in the first embodiment of the present application has higher temperature field uniformity than the conductive lines prepared in the prior art. , thickness uniformity and position accuracy. At the same time, since the heating layer 30 has a whole-layer structure and completely covers the infrared coating 20, the heating layer 30 can reduce the energy radiated outward by the infrared coating 20, thereby improving the efficiency of the infrared coating. 20% energy utilization.
  • the inventor found that the surface of the infrared coating prepared by traditional technology and the present application is usually rough and uneven, the infrared coating is porous, and the emissivity of the infrared coating is greater than or equal to 0.9.
  • the surface of the infrared coating is flat and has no porous structure, during the process of preparing the heating layer on the surface of the infrared coating, when particles are vertically incident on the surface of the infrared coating, the diffusion effect dominates, and the heating layer will grow into a uniform and dense structure.
  • the inventor further improved the first embodiment of the present application and obtained the second embodiment.
  • the preparation method further includes:
  • Step S121 Please refer to FIG. 6 and FIG. 7 together to prepare a transition layer 40 on the outer surface of the infrared coating 21 .
  • the surface of the infrared coating 21 has an uneven structure and a porous structure 211 , and the transition layer 40 covers the uneven structure and part of the transition layer 40 is filled in the porous structure 211 .
  • the transition layer 40 completely covers the infrared coating 21 .
  • the transition layer 40 may not completely cover the infrared coating 21 , and it only needs to ensure that the surface of the infrared coating 21 is smooth.
  • the transition layer 40 can be prepared by screen printing, spraying or inkjet printing.
  • the transition layer 40 is made of at least one of glass glaze, silicon dioxide, and alumina.
  • the transition layer 40 is used to modify the surface topography of the infrared coating 21 to improve the flatness of the infrared coating 21 .
  • the thermal expansion coefficient of the transition layer 40 matches the thermal expansion coefficient of the infrared coating 21 , the thermal expansion coefficient of the substrate 10 and the heating layer 30 .
  • the transition layer 40 has a smooth surface, no cracks, and a complete surface morphology, and the transition layer 40 and the infrared coating 21 do not corrode each other during the preparation process.
  • step S13 referring to FIG. 8 , the heating layer 30 is prepared on the outer surface of the transition layer 40 to obtain the heating device 200 .
  • the preparation method provided by the second embodiment of the application prepares the transition layer 40 on the surface of the infrared coating prepared by traditional technology and the first embodiment of the application to modify the surface morphology of the infrared coating 21, Improve the flatness of the infrared coating 21, reduce the shadow effect in the process of preparing the heating layer 30, make the diffusion effect dominate, and improve the density, bonding force, thickness uniformity and surface diffusion of the heating layer 30 reflection.
  • the second embodiment of the present application also provides a heating device 200.
  • the difference between the heating device 200 and the heating device 100 is:
  • the heating device 200 further includes a transition layer 40 located between the infrared coating 21 and the heating layer 30 .
  • the surface of the infrared coating 21 has an uneven structure and a porous structure 211 , and the transition layer 40 covers the uneven structure and part of the transition layer 40 is located in the porous structure 211 .
  • the transition layer 40 completely covers the infrared coating 21 .
  • the transition layer 40 may not completely cover the infrared coating 21 , and it only needs to ensure that the surface of the infrared coating 21 is smooth.
  • the transition layer 40 is made of at least one of glass glaze, silicon dioxide, and alumina.
  • the transition layer 40 is used to modify the surface topography of the infrared coating 21 to improve the flatness of the infrared coating 21 .
  • the thermal expansion coefficient of the transition layer 40 matches the thermal expansion coefficient of the infrared coating 21 , the thermal expansion coefficient of the substrate 10 and the heating layer 30 .
  • the transition layer 40 has a smooth surface, no cracks, and a complete surface morphology after sintering, and the transition layer 40 is not in contact with the infrared coating 21 during the preparation process. Mutual erosion occurs.
  • the heating device 200 provided in the second embodiment of the application is connected to the transition layer 40 on the surface of the infrared coating in traditional technology and the first embodiment of the application to modify the surface topography of the infrared coating 21 Modify to improve the flatness of the infrared coating 21, reduce the shadow effect in the process of preparing the heating layer 30, make the diffusion effect dominate, and improve the density, bonding force, and thickness uniformity of the heating layer 30 and surface diffuse reflection.
  • the quartz substrate has a tubular structure and can withstand high temperatures exceeding 800°C.
  • the quartz substrate has a tubular structure and can withstand high temperatures exceeding 800°C.
  • the surface of the antimony-doped tin oxide infrared coating has a concave and convex structure and a porous structure.

Abstract

The present application provides a preparation method for a heating device, comprising the following steps: providing a base body provided with a chamber; preparing an infrared coating on the outer surface of the base body; and preparing a heating layer on the outer surface of the infrared coating, the heating layer being a resistive film and completely covering the infrared coating. The heating layer in the prepared heating device of the present application has better temperature field uniformity, thickness uniformity and position precision, and the present application can improve the energy utilization rate of the infrared coating. The present application further provides a heating device.

Description

加热器件及其制备方法Heating device and preparation method thereof
本申请要求于2022年08月26日提交中国专利局、申请号为202211030772.0、申请名称为“加热器件及其制备方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。This application claims priority to the Chinese patent application filed with the China Patent Office on August 26, 2022, with the application number 202211030772.0 and the application name "Heating device and preparation method thereof", the entire content of which is incorporated into this application by reference.
技术领域Technical field
本申请涉及烟具技术领域，特别是涉及一种加热器件及其制备方法。The present application relates to the technical field of smoking articles, and in particular to a heating device and a preparation method thereof.
背景技术Background technique
传统的诸如香烟和雪茄的吸烟制品在使用期间通过燃烧烟草以产生烟雾供人吸食，燃烧过程中，吸烟制品在挥发出尼古丁等有效成分的同时，还会产生许多不利于健康的成分。目前已经尝试通过产生在不燃烧的情况下释放尼古丁等化合物的产品来为这些燃烧烟草的物品提供替代物以降低吸烟的危害。此类产品的示例是所谓的加热不燃烧产品，其通过加热吸烟制品而不是燃烧来释放尼古丁等有效化合物，由于不燃烧，将大大降低烟气中焦油、一氧化碳等物质。During use, traditional smoking products such as cigarettes and cigars burn tobacco to produce smoke for people to smoke. During the combustion process, while the smoking products volatilize active ingredients such as nicotine, they also produce many harmful ingredients that are harmful to health. Attempts have been made to provide alternatives to these tobacco-burning items to reduce the harms of smoking by creating products that release compounds such as nicotine without burning. Examples of such products are so-called heat-not-burn products, which release effective compounds such as nicotine by heating the smoking article rather than burning it. Due to the non-burning, tar, carbon monoxide and other substances in the smoke will be greatly reduced.
现有的低温加热不燃烧的烟具包括基体、位于基体表面的红外涂层以及位于红外涂层表面的导电线路。通电后的导电线路产生热量，并将热量传导至红外涂层，红外涂层受热产生的红外线可穿透基体并对基体内的吸烟制品进行加热。目前在制备导电线路时基本上采用丝印厚膜技术，即利用丝网印刷的方法将导体浆料、电阻浆料或介质浆料等材料转移到红外涂层上，再经过高温烧结而成。然而，当导电线路通电时，通电的导电线路附近温度较高，而其他位置温度较低，即存在温度场不均匀的现象，且采用丝印厚膜技术制备的导电线路的厚度以及位置精度较差，批次重复性较差。The existing low-temperature heating and non-burning smoking device includes a base body, an infrared coating located on the surface of the base body, and a conductive line located on the surface of the infrared coating. After being energized, the conductive circuit generates heat and conducts the heat to the infrared coating. The infrared rays generated by heating of the infrared coating can penetrate the base and heat the smoking article in the base. Currently, screen printing thick film technology is basically used when preparing conductive circuits, that is, using screen printing method to transfer materials such as conductor paste, resistor paste or dielectric paste to the infrared coating, and then sintering at high temperature. However, when a conductive line is energized, the temperature near the energized conductive line is higher, while the temperature in other locations is lower, that is, there is a phenomenon of uneven temperature field, and the thickness and position accuracy of the conductive lines prepared using silk screen thick film technology are poor. , batch repeatability is poor.
发明内容Contents of the invention
基于此，有必要提供一种能够提高导电线路的温度场均匀性、厚度均匀性以及位置精度的加热器件的制备方法。 Based on this, it is necessary to provide a method for preparing a heating device that can improve the temperature field uniformity, thickness uniformity and position accuracy of conductive lines.
另，还有必要提供一种由上述制备方法制备的加热器件。In addition, it is also necessary to provide a heating device prepared by the above preparation method.
本申请一方面提供了一种加热器件的制备方法，包括以下步骤：On the one hand, this application provides a method for preparing a heating device, which includes the following steps:
提供基体，所述基体具有腔室；providing a base body having a cavity;
在所述基体的外表面上制备红外涂层；以及Preparing an infrared coating on the outer surface of the substrate; and
在所述红外涂层的外表面上制备加热层，所述加热层为电阻膜且完全覆盖所述红外涂层。A heating layer is prepared on the outer surface of the infrared coating. The heating layer is a resistive film and completely covers the infrared coating.
在其中一些实施例中，制备所述加热层的方法包括磁控溅射、喷涂、多弧离子镀以及蒸发中的至少一种。In some embodiments, the method for preparing the heating layer includes at least one of magnetron sputtering, spraying, multi-arc ion plating, and evaporation.
在其中一些实施例中，制备所述红外涂层的方法包括丝网印刷、喷涂以及喷墨打印中的至少一种。In some embodiments, the method of preparing the infrared coating includes at least one of screen printing, spray coating, and inkjet printing.
在其中一些实施例中，在制备所述红外涂层之后，且在制备所述加热层之前，所述制备方法还包括：In some embodiments, after preparing the infrared coating and before preparing the heating layer, the preparation method further includes:
在所述红外涂层的外表面上制备过渡层。A transition layer is prepared on the outer surface of the infrared coating.
在其中一些实施例中，制备所述过渡层的方法包括丝网印刷、喷涂以及喷墨打印中的至少一种。In some embodiments, the method of preparing the transition layer includes at least one of screen printing, spray coating, and inkjet printing.
本申请另一方面提供了一种加热器件，包括：Another aspect of the application provides a heating device, including:
基体，所述基体具有腔室；A base body having a cavity;
红外涂层，连接于所述基体的外表面上；以及an infrared coating attached to the outer surface of the substrate; and
加热层，连接于所述红外涂层的外表面上，所述加热层为电阻膜且完全覆盖所述红外涂层。A heating layer is connected to the outer surface of the infrared coating. The heating layer is a resistive film and completely covers the infrared coating.
在其中一些实施例中，所述加热层的材质包括银钯、铬、银、钨、银钯合金、铬合金、银合金以及钨合金中的至少一种。In some embodiments, the material of the heating layer includes at least one of silver palladium, chromium, silver, tungsten, silver palladium alloy, chromium alloy, silver alloy and tungsten alloy.
在其中一些实施例中，所述基体呈管状结构，所述基体的材质包括石英、高硼硅玻璃、微晶玻璃以及透明陶瓷中的至少一种。In some embodiments, the base body has a tubular structure, and the base body is made of at least one of quartz, borosilicate glass, crystallized glass, and transparent ceramics.
在其中一些实施例中，所述加热器件还包括：In some embodiments, the heating device further includes:
过渡层，所述过渡层位于所述红外涂层和所述加热层之间。A transition layer is located between the infrared coating and the heating layer.
在其中一些实施例中，所述过渡层的材质包括玻璃釉、二氧化硅以及氧化铝中的至少一 种。In some embodiments, the transition layer is made of at least one of glass glaze, silicon dioxide and alumina. kind.
本申请在所述红外涂层的外表面上制备所述加热层，所述加热层为电阻膜，所述加热层起到导电线路的作用，由于所述加热层完全覆盖所述红外涂层，相比现有技术制备的导电线路，本申请制备的所述加热层具有更好的温度场均匀性、厚度均匀性以及位置精度。In this application, the heating layer is prepared on the outer surface of the infrared coating. The heating layer is a resistive film. The heating layer functions as a conductive circuit. Since the heating layer completely covers the infrared coating, Compared with the conductive lines prepared by the prior art, the heating layer prepared by this application has better temperature field uniformity, thickness uniformity and position accuracy.
附图说明Description of drawings
为了更清楚地说明本申请的技术方案，下面将对本申请中所使用的附图作简单介绍。显而易见地，下面所描述的附图仅仅是本申请的一些实施方式，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据附图获得其他的附图。In order to explain the technical solution of the present application more clearly, the drawings used in the present application will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on the drawings without exerting creative efforts.
图1为本申请第一实施例提供的加热器件的结构示意图；Figure 1 is a schematic structural diagram of a heating device provided by the first embodiment of the present application;
图2为图1中所示的加热器件的基体沿II-II的部分剖视图；Figure 2 is a partial cross-sectional view along II-II of the base body of the heating device shown in Figure 1;
图3为在图2中所示的基体的外表面上制备红外涂层后的剖视图；Figure 3 is a cross-sectional view after preparing an infrared coating on the outer surface of the substrate shown in Figure 2;
图4为在图3中所示的红外涂层的外表面上制备加热层后得到的加热器件的剖视图；Figure 4 is a cross-sectional view of the heating device obtained after preparing a heating layer on the outer surface of the infrared coating shown in Figure 3;
图5为本申请第一实施例提供的加热器件的结构示意图；Figure 5 is a schematic structural diagram of a heating device provided by the first embodiment of the present application;
图6为图5中所示的加热器件的基体以及红外涂层沿VI-VI的部分剖视图；Figure 6 is a partial cross-sectional view along VI-VI of the base body and the infrared coating of the heating device shown in Figure 5;
图7为在图6中所示的红外涂层的外表面上制备过渡层后的剖视图；Figure 7 is a cross-sectional view after preparing a transition layer on the outer surface of the infrared coating shown in Figure 6;
图8为在图7中所示的过渡层的外表面上制备加热层后得到的加热器件的剖视图。FIG. 8 is a cross-sectional view of the heating device obtained after preparing a heating layer on the outer surface of the transition layer shown in FIG. 7 .
附图说明：10-基体；11-腔室；20、21-红外涂层；211-多孔结构；30-加热层；40-过渡层；100、200-加热器件。Description of the drawings: 10-substrate; 11-chamber; 20, 21-infrared coating; 211-porous structure; 30-heating layer; 40-transition layer; 100, 200-heating device.
具体实施方式Detailed ways
为了便于理解本申请，下面将参照相关附图对本申请进行更全面的描述。附图中给出了本申请的较佳实施例。但是，本申请可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本申请的公开内容的理解更加透彻全面。In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present application are shown in the accompanying drawings. However, the present application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that a thorough understanding of the disclosure of the present application will be provided.
除非另有定义，本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施 例的目的，不是旨在于限制本申请。本文所使用的术语“和/或”包括一个或多个相关的所列项目的任意的和所有的组合。Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing specific implementations only. The examples are not intended to limit this application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
请参阅图1，本申请第一实施例提供一种加热器件的制备方法，包括以下步骤：Referring to Figure 1, a first embodiment of the present application provides a method for preparing a heating device, which includes the following steps:
步骤S11，请一并参阅图2，提供基体10。In step S11, please also refer to FIG. 2 to provide the base 10.
在一实施例中，所述基体10呈管状结构。具体地，所述基体10可为圆管。在一实施例中，所述基体10的材质包括石英、高硼硅玻璃、微晶玻璃以及透明陶瓷中的至少一种。在另一实施例中，所述基体10的材质还可为其他物质。本申请对所述基体10的材质不作限制。在一实施例中，所述基体10能耐超过800℃的高温。即所述基体10的熔点大于800℃。在另一实施例中，所述基体10的熔点大于900℃、1000℃、1100℃、1200℃、1300℃、1400℃、1500℃、1600℃、1700℃、1800℃、1900℃或2000℃。In one embodiment, the base body 10 has a tubular structure. Specifically, the base 10 may be a round tube. In one embodiment, the material of the substrate 10 includes at least one of quartz, borosilicate glass, crystallized glass, and transparent ceramics. In another embodiment, the material of the base 10 may also be other substances. This application does not limit the material of the base 10 . In one embodiment, the substrate 10 can withstand high temperatures exceeding 800°C. That is, the melting point of the substrate 10 is greater than 800°C. In another embodiment, the melting point of the substrate 10 is greater than 900°C, 1000°C, 1100°C, 1200°C, 1300°C, 1400°C, 1500°C, 1600°C, 1700°C, 1800°C, 1900°C or 2000°C.
其中，所述基体10具有腔室11。其中，所述腔室11内可存放吸烟制品。具体地，所述吸烟制品可为烟草。Wherein, the base body 10 has a cavity 11 . Smoking articles can be stored in the chamber 11 . In particular, the smoking article may be tobacco.
步骤S12，请参阅图3，在所述基体10的外表面上制备红外涂层20。Step S12 , please refer to FIG. 3 , prepare an infrared coating 20 on the outer surface of the substrate 10 .
在一实施例中，可通过丝网印刷、喷涂或喷墨打印的方法制备所述红外涂层20。可以理解，所述红外涂层20连接于所述基体10的外表面上。In one embodiment, the infrared coating 20 can be prepared by screen printing, spraying or inkjet printing. It can be understood that the infrared coating 20 is connected to the outer surface of the base 10 .
当所述红外涂层20受热时，所述红外涂层20温度升高而具有热能。所述红外涂层20可将该热能以红外辐射的形式对所述腔室11内的烟草制品进行加热。When the infrared coating 20 is heated, the temperature of the infrared coating 20 increases and has thermal energy. The infrared coating 20 can use the thermal energy in the form of infrared radiation to heat the tobacco products in the chamber 11 .
其中，所述红外涂层20通常选择具有红外发射率高的材料，可选地，例如含有氧化锡的材料，作为这种材料的一种选择，锑(Sb)掺杂氧化锡是优选的。氧化锡作为导电膜，其载流子主要来自晶体缺陷，即氧空位和掺杂杂质提供的电子。SnO2掺杂Sb等元素后导电性能显著提高，形成n型半导体，Sb掺杂SnO2的半导体导电性好，性能稳定，称为ATO(锑掺杂二氧化锡，Antimony Doped Tin Oxide)。此外，其他SnO2掺杂材料还包括：F、Ni、Mn、Mo、Ce、Cu、Zn、Ta、Si、N、P、In、Pd、Bi等。即所述红外涂层20的材质还包括氟掺杂氧化锡、镍掺杂氧化锡、锰掺杂氧化锡、钼掺杂氧化锡、铈掺杂氧化锡、铜掺杂氧化锡、锌掺杂氧化锡、钽掺杂氧化锡、硅掺杂氧化锡、氮掺杂氧化锡、磷掺杂氧化锡、铟掺杂氧化锡、钯掺杂氧化锡以及铋掺杂氧化锡等。 Wherein, the infrared coating 20 is usually selected from a material with high infrared emissivity, optionally, for example, a material containing tin oxide. As a choice of this material, antimony (Sb) doped tin oxide is preferred. As a conductive film, tin oxide's carriers mainly come from crystal defects, namely oxygen vacancies and electrons provided by doping impurities. When SnO 2 is doped with Sb and other elements, its conductivity is significantly improved, forming an n-type semiconductor. The semiconductor doped with Sb SnO 2 has good conductivity and stable performance, and is called ATO (Antimony Doped Tin Oxide). In addition, other SnO 2 doping materials include: F, Ni, Mn, Mo, Ce, Cu, Zn, Ta, Si, N, P, In, Pd, Bi, etc. That is, the materials of the infrared coating 20 also include fluorine doped tin oxide, nickel doped tin oxide, manganese doped tin oxide, molybdenum doped tin oxide, cerium doped tin oxide, copper doped tin oxide, zinc doped Tin oxide, tantalum doped tin oxide, silicon doped tin oxide, nitrogen doped tin oxide, phosphorus doped tin oxide, indium doped tin oxide, palladium doped tin oxide and bismuth doped tin oxide, etc.
步骤S13，请参阅图4，在所述红外涂层20的外表面上制备加热层30，得到加热器件100。Step S13, please refer to FIG. 4. A heating layer 30 is prepared on the outer surface of the infrared coating 20 to obtain the heating device 100.
在一实施例中，可通过磁控溅射、喷涂、多弧离子镀或蒸发的方式制备所述加热层30。可以理解，所述加热层30连接于所述红外涂层20的外表面上。In one embodiment, the heating layer 30 can be prepared by magnetron sputtering, spraying, multi-arc ion plating or evaporation. It can be understood that the heating layer 30 is connected to the outer surface of the infrared coating 20 .
其中，所述加热层30为电阻膜且完全覆盖所述红外涂层20。可以理解，所述加热层30具有整层的结构。Wherein, the heating layer 30 is a resistive film and completely covers the infrared coating 20 . It can be understood that the heating layer 30 has a whole layer structure.
在一实施例中，所述加热层30的材质包括银钯(AgPd)、铬(Cr)、银(Ag)、钨(W)、银钯合金、铬合金、银合金以及钨合金中的至少一种。在另一实施例中，所述加热层30的材质还可其他具有导电性且具有一定阻热性能的物质。本申请对所述加热层30的材质不作限制。In one embodiment, the heating layer 30 is made of at least one of silver palladium (AgPd), chromium (Cr), silver (Ag), tungsten (W), silver palladium alloy, chromium alloy, silver alloy and tungsten alloy. A sort of. In another embodiment, the heating layer 30 may be made of other conductive substances and certain heat-resistant properties. This application does not limit the material of the heating layer 30 .
其中，所述加热层30具有优异的热稳定性以及高反射率，且所述加热层30的热膨胀系数与所述基体10以及所述红外涂层20的热膨胀系数相匹配，当所述红外涂层20产生热量时，所述加热层30的结构稳定，不会出现明显裂纹以及脱落等现象。The heating layer 30 has excellent thermal stability and high reflectivity, and the thermal expansion coefficient of the heating layer 30 matches the thermal expansion coefficient of the substrate 10 and the infrared coating 20. When the infrared coating When the layer 20 generates heat, the structure of the heating layer 30 is stable and no obvious cracks or falling off will occur.
可以理解，所述加热层30起到导电线路的作用，通电后的所述红外涂层20产生热量，并将热量传导至所述红外涂层20，所述红外涂层20将该热量以红外辐射的形式对所述腔室11内的烟草制品进行加热。It can be understood that the heating layer 30 functions as a conductive circuit. The infrared coating 20 after being energized generates heat and conducts the heat to the infrared coating 20. The infrared coating 20 converts the heat into infrared. The tobacco product in the chamber 11 is heated in the form of radiation.
本申请第一实施例提供的制备方法在所述红外涂层20的外表面上制备所述加热层30，所述加热层30为电阻膜，所述加热层30起到导电线路的作用，由于所述加热层30完全覆盖所述红外涂层20，相比现有技术制备的导电线路，本申请第一实施例制备的所述加热层30具有更高的温度场均匀性、厚度均匀性以及位置精度。同时，由于所述加热层30具有整层的结构，且完全覆盖所述红外涂层20，因此所述加热层30能够减少所述红外涂层20向外辐射能量，从而提高所述红外涂层20的能量利用率。The preparation method provided by the first embodiment of the present application prepares the heating layer 30 on the outer surface of the infrared coating 20. The heating layer 30 is a resistive film, and the heating layer 30 functions as a conductive circuit. The heating layer 30 completely covers the infrared coating 20. Compared with the conductive lines prepared in the prior art, the heating layer 30 prepared in the first embodiment of the present application has higher temperature field uniformity, thickness uniformity and Position accuracy. At the same time, since the heating layer 30 has a whole-layer structure and completely covers the infrared coating 20, the heating layer 30 can reduce the energy radiated outward by the infrared coating 20, thereby improving the efficiency of the infrared coating. 20% energy utilization.
请再次参阅图1和图4，本申请第一实施例还提供一种加热器件100，所述加热器件100包括基体10，红外涂层20以及加热层30。Please refer to Figures 1 and 4 again. The first embodiment of the present application also provides a heating device 100. The heating device 100 includes a base 10, an infrared coating 20 and a heating layer 30.
在一实施例中，所述基体10呈管状结构。具体地，所述基体10可为圆管。在一实施例中，所述基体10的材质包括石英、高硼硅玻璃、微晶玻璃以及透明陶瓷中的至少一种。在另 一实施例中，所述基体10的材质还可为其他物质。本申请对所述基体10的材质不作限制。在一实施例中，所述基体10能耐超过800℃的高温。即所述基体10的熔点大于800℃。在另一实施例中，所述基体10的熔点大于900℃、1000℃、1100℃、1200℃、1300℃、1400℃、1500℃、1600℃、1700℃、1800℃、1900℃或2000℃。In one embodiment, the base body 10 has a tubular structure. Specifically, the base 10 may be a round tube. In one embodiment, the material of the substrate 10 includes at least one of quartz, borosilicate glass, crystallized glass, and transparent ceramics. in another In one embodiment, the material of the base 10 may also be other substances. This application does not limit the material of the base 10 . In one embodiment, the substrate 10 can withstand high temperatures exceeding 800°C. That is, the melting point of the substrate 10 is greater than 800°C. In another embodiment, the melting point of the substrate 10 is greater than 900°C, 1000°C, 1100°C, 1200°C, 1300°C, 1400°C, 1500°C, 1600°C, 1700°C, 1800°C, 1900°C or 2000°C.
其中，所述基体10具有腔室11。其中，所述腔室11内可存放吸烟制品。具体地，所述吸烟制品可为烟草。Wherein, the base body 10 has a cavity 11 . Smoking articles can be stored in the chamber 11 . In particular, the smoking article may be tobacco.
所述红外涂层20连接于所述基体10的外表面上。当所述红外涂层20受热时，所述红外涂层20温度升高而具有热能。所述红外涂层20可将该热能以红外辐射的形式对所述腔室11内的烟草制品进行加热。The infrared coating 20 is connected to the outer surface of the base 10 . When the infrared coating 20 is heated, the temperature of the infrared coating 20 increases and has thermal energy. The infrared coating 20 can use the thermal energy in the form of infrared radiation to heat the tobacco products in the chamber 11 .
所述红外涂层20通常选择具有红外发射率高的材料，可选地，例如含有氧化锡的材料，作为这种材料的一种选择，锑掺杂氧化锡是优选的。氧化锡作为导电膜，其载流子主要来自晶体缺陷，即氧空位和掺杂杂质提供的电子。SnO2掺杂Sb等元素后导电性能显著提高，形成n型半导体，Sb掺杂SnO2的半导体导电性好，性能稳定，称为ATO(锑掺杂二氧化锡，Antimony Doped Tin Oxide)。此外，其他SnO2掺杂材料还包括：氟(F)、镍(Ni)、锰(Mn)、钼(Mo)、铈(Ce)、铜(Cu)、锌(Zn)、钽(Ta)、硅(Si)、氮(N)、磷(P)、铟(In)、钯(Pd)以及铋(Bi)等。即所述红外涂层20的材质还包括氟掺杂氧化锡、镍掺杂氧化锡、锰掺杂氧化锡、钼掺杂氧化锡、铈掺杂氧化锡、铜掺杂氧化锡、锌掺杂氧化锡、钽掺杂氧化锡、硅掺杂氧化锡、氮掺杂氧化锡、磷掺杂氧化锡、铟掺杂氧化锡、钯掺杂氧化锡以及铋掺杂氧化锡等。The infrared coating 20 is usually made of materials with high infrared emissivity, optionally, for example, materials containing tin oxide. As a choice of such materials, antimony-doped tin oxide is preferred. As a conductive film, tin oxide's carriers mainly come from crystal defects, namely oxygen vacancies and electrons provided by doping impurities. When SnO 2 is doped with Sb and other elements, its conductivity is significantly improved, forming an n-type semiconductor. The semiconductor doped with Sb SnO 2 has good conductivity and stable performance, and is called ATO (Antimony Doped Tin Oxide). In addition, other SnO doping materials include: fluorine (F), nickel (Ni), manganese (Mn), molybdenum (Mo), cerium (Ce), copper (Cu), zinc (Zn), tantalum (Ta) , silicon (Si), nitrogen (N), phosphorus (P), indium (In), palladium (Pd) and bismuth (Bi), etc. That is, the materials of the infrared coating 20 also include fluorine doped tin oxide, nickel doped tin oxide, manganese doped tin oxide, molybdenum doped tin oxide, cerium doped tin oxide, copper doped tin oxide, zinc doped Tin oxide, tantalum doped tin oxide, silicon doped tin oxide, nitrogen doped tin oxide, phosphorus doped tin oxide, indium doped tin oxide, palladium doped tin oxide and bismuth doped tin oxide, etc.
所述加热层30连接于所述红外涂层20的外表面上。其中，所述加热层30为电阻膜且完全覆盖所述红外涂层20。可以理解，所述加热层30具有整层的结构。在一实施例中，所述加热层30的材质包括银钯(AgPd)、铬(Cr)、银(Ag)、钨(W)、银钯合金、铬合金、银合金以及钨合金中的至少一种。在另一实施例中，所述加热层30的材质还可其他具有导电性且具有一定阻热性能的物质。本申请对所述加热层30的材质不作限制。The heating layer 30 is connected to the outer surface of the infrared coating 20 . Wherein, the heating layer 30 is a resistive film and completely covers the infrared coating 20 . It can be understood that the heating layer 30 has a whole layer structure. In one embodiment, the heating layer 30 is made of at least one of silver palladium (AgPd), chromium (Cr), silver (Ag), tungsten (W), silver palladium alloy, chromium alloy, silver alloy and tungsten alloy. A sort of. In another embodiment, the heating layer 30 may be made of other conductive substances and certain heat-resistant properties. This application does not limit the material of the heating layer 30 .
其中，所述加热层30具有优异的热稳定性以及高反射率，且所述加热层30的热膨胀系数与所述基体10以及所述红外涂层20的热膨胀系数相匹配，当所述红外涂层20产生热量 时，所述加热层30的结构稳定，不会出现明显裂纹以及脱落等现象。The heating layer 30 has excellent thermal stability and high reflectivity, and the thermal expansion coefficient of the heating layer 30 matches the thermal expansion coefficient of the substrate 10 and the infrared coating 20. When the infrared coating Layer 20 generates heat , the structure of the heating layer 30 is stable and no obvious cracks or falling off will occur.
可以理解，所述加热层30起到导电线路的作用，通电后的所述红外涂层20产生热量，并将热量传导至所述红外涂层20，所述红外涂层20将该热量以红外辐射的形式对所述腔室11内的烟草制品进行加热。It can be understood that the heating layer 30 functions as a conductive circuit. The infrared coating 20 after being energized generates heat and conducts the heat to the infrared coating 20. The infrared coating 20 converts the heat into infrared. The tobacco product in the chamber 11 is heated in the form of radiation.
本申请第一实施例提供的所述加热器件100中的所述加热层30连接于所述红外涂层20的外表面上，所述加热层30为电阻膜，所述加热层30起到导电线路的作用，由于所述加热层30完全覆盖所述红外涂层20，相比现有技术制备的导电线路，本申请第一实施例中的所述加热层30具有更高的温度场均匀性、厚度均匀性以及位置精度。同时，由于所述加热层30具有整层的结构，且完全覆盖所述红外涂层20，因此所述加热层30能够减少所述红外涂层20向外辐射能量，从而提高所述红外涂层20的能量利用率。The heating layer 30 in the heating device 100 provided in the first embodiment of the present application is connected to the outer surface of the infrared coating 20. The heating layer 30 is a resistive film, and the heating layer 30 functions as a conductor. Because the heating layer 30 completely covers the infrared coating 20, the heating layer 30 in the first embodiment of the present application has higher temperature field uniformity than the conductive lines prepared in the prior art. , thickness uniformity and position accuracy. At the same time, since the heating layer 30 has a whole-layer structure and completely covers the infrared coating 20, the heating layer 30 can reduce the energy radiated outward by the infrared coating 20, thereby improving the efficiency of the infrared coating. 20% energy utilization.
然而，在制备红外涂层时，发明人发现传统技术以及本申请制备的红外涂层的表面通常粗糙不平，红外涂层呈多孔状，且红外涂层的辐射率大于或等于0.9。当红外涂层表面平整且无多孔结构时，在红外涂层表面制备加热层的过程中，当粒子垂直入射到红外涂层表面时，扩散效应占主导作用，加热层会生长成均匀致密的结构；当红外涂层表面粗糙且有多孔结构时，随着粒子入射角度的增大，阴影效应增强并取代扩散效应占主导作用，粒子被纳米柱和原子簇阻挡，并且扩散受到限制，阴影效应的增强会使得入射粒子容易沉积在红外涂层的最顶端，加热层变得很疏松且纳米柱之间的空隙越来越大，因而加热层在粗糙不平表面红外涂层上沉积易出现致密度较低、结合力较小、厚度均匀性较差且表面拉曼散射增强等现象。为此，发明人又对本申请第一实施例进行改进，得到了第二实施例。However, when preparing the infrared coating, the inventor found that the surface of the infrared coating prepared by traditional technology and the present application is usually rough and uneven, the infrared coating is porous, and the emissivity of the infrared coating is greater than or equal to 0.9. When the surface of the infrared coating is flat and has no porous structure, during the process of preparing the heating layer on the surface of the infrared coating, when particles are vertically incident on the surface of the infrared coating, the diffusion effect dominates, and the heating layer will grow into a uniform and dense structure. ; When the surface of the infrared coating is rough and has a porous structure, as the incident angle of the particles increases, the shadow effect is enhanced and replaces the diffusion effect as the dominant effect. The particles are blocked by nanopillars and atomic clusters, and diffusion is limited, and the shadow effect Enhancement will make the incident particles easily deposited on the top of the infrared coating. The heating layer becomes very loose and the gaps between the nanopillars become larger and larger. Therefore, the heating layer deposited on the rough and uneven surface of the infrared coating is prone to be denser. Low, small binding force, poor thickness uniformity and enhanced surface Raman scattering. For this reason, the inventor further improved the first embodiment of the present application and obtained the second embodiment.
请参阅图5，本申请第二实施例提供的制备方法和第一实施例提供的制备方法的区别在于：在步骤S12之后，且在步骤S13之前，所述制备方法还包括：Please refer to Figure 5. The difference between the preparation method provided by the second embodiment of the present application and the preparation method provided by the first embodiment is that after step S12 and before step S13, the preparation method further includes:
步骤S121：请一并参阅图6和图7，在红外涂层21的外表面上制备过渡层40。Step S121: Please refer to FIG. 6 and FIG. 7 together to prepare a transition layer 40 on the outer surface of the infrared coating 21 .
其中，所述红外涂层21的表面具有凹凸结构以及多孔结构211，且所述过渡层40覆盖所述凹凸结构以及部分所述过渡层40填充于所述多孔结构211内。在一实施例中，所述过渡层40完全覆盖所述红外涂层21。在另一实施例中，所述过渡层40也可不完全覆盖所述红外涂层21，只需要保证所述红外涂层21的表面平整即可。 The surface of the infrared coating 21 has an uneven structure and a porous structure 211 , and the transition layer 40 covers the uneven structure and part of the transition layer 40 is filled in the porous structure 211 . In one embodiment, the transition layer 40 completely covers the infrared coating 21 . In another embodiment, the transition layer 40 may not completely cover the infrared coating 21 , and it only needs to ensure that the surface of the infrared coating 21 is smooth.
在一实施例中，可通过丝网印刷、喷涂或喷墨打印的方法制备所述过渡层40。In one embodiment, the transition layer 40 can be prepared by screen printing, spraying or inkjet printing.
在一实施例中，所述过渡层40的材质包括玻璃釉、二氧化硅以及氧化铝中的至少一种。In one embodiment, the transition layer 40 is made of at least one of glass glaze, silicon dioxide, and alumina.
其中，所述过渡层40用于对所述红外涂层21的表面形貌进行修饰，以提高所述红外涂层21的平整性。其中，所述过渡层40的热膨胀系数与所述红外涂层21的热膨胀系数、所述基体10的热膨胀系数以及所述加热层30的热膨胀系数相匹配。另外，所述过渡层40经烧结后表面光滑、无裂纹，表面形貌完整，且所述过渡层40在制备过程中与所述红外涂层21不发生相互侵蚀现象。The transition layer 40 is used to modify the surface topography of the infrared coating 21 to improve the flatness of the infrared coating 21 . The thermal expansion coefficient of the transition layer 40 matches the thermal expansion coefficient of the infrared coating 21 , the thermal expansion coefficient of the substrate 10 and the heating layer 30 . In addition, after sintering, the transition layer 40 has a smooth surface, no cracks, and a complete surface morphology, and the transition layer 40 and the infrared coating 21 do not corrode each other during the preparation process.
相应地，在步骤S13中，请参阅图8，在所述过渡层40的外表面上制备所述加热层30，得到加热器件200。Correspondingly, in step S13 , referring to FIG. 8 , the heating layer 30 is prepared on the outer surface of the transition layer 40 to obtain the heating device 200 .
本申请第二实施例提供的制备方法在传统技术以及本申请第一实施例制备的红外涂层的表面上制备所述过渡层40，以对所述红外涂层21的表面形貌进行修饰，提升所述红外涂层21的平整性，在制备所述加热层30过程中降低阴影效应，使扩散效应占主导作用，提升所述加热层30的致密度、结合力、厚度均匀性及表面漫反射。The preparation method provided by the second embodiment of the application prepares the transition layer 40 on the surface of the infrared coating prepared by traditional technology and the first embodiment of the application to modify the surface morphology of the infrared coating 21, Improve the flatness of the infrared coating 21, reduce the shadow effect in the process of preparing the heating layer 30, make the diffusion effect dominate, and improve the density, bonding force, thickness uniformity and surface diffusion of the heating layer 30 reflection.
请再次参阅图5和图8，本申请第二实施例还提供一种加热器件200，所述加热器件200与所述加热器件100的区别在于：Please refer to Figures 5 and 8 again. The second embodiment of the present application also provides a heating device 200. The difference between the heating device 200 and the heating device 100 is:
所述加热器件200还包括过渡层40，所述过渡层40位于所述红外涂层21和所述加热层30之间。The heating device 200 further includes a transition layer 40 located between the infrared coating 21 and the heating layer 30 .
其中，所述红外涂层21的表面具有凹凸结构以及多孔结构211，且所述过渡层40覆盖所述凹凸结构以及部分所述过渡层40位于所述多孔结构211内。在一实施例中，所述过渡层40完全覆盖所述红外涂层21。在另一实施例中，所述过渡层40也可不完全覆盖所述红外涂层21，只需要保证所述红外涂层21的表面平整即可。在一实施例中，所述过渡层40的材质包括玻璃釉、二氧化硅以及氧化铝中的至少一种。The surface of the infrared coating 21 has an uneven structure and a porous structure 211 , and the transition layer 40 covers the uneven structure and part of the transition layer 40 is located in the porous structure 211 . In one embodiment, the transition layer 40 completely covers the infrared coating 21 . In another embodiment, the transition layer 40 may not completely cover the infrared coating 21 , and it only needs to ensure that the surface of the infrared coating 21 is smooth. In one embodiment, the transition layer 40 is made of at least one of glass glaze, silicon dioxide, and alumina.
其中，所述过渡层40用于对所述红外涂层21的表面形貌进行修饰，以提高所述红外涂层21的平整性。其中，所述过渡层40的热膨胀系数与所述红外涂层21的热膨胀系数、所述基体10的热膨胀系数以及所述加热层30的热膨胀系数相匹配。另外，所述过渡层40经烧结后表面光滑、无裂纹，表面形貌完整，且所述过渡层40在制备过程中与所述红外涂层21不 发生相互侵蚀现象。The transition layer 40 is used to modify the surface topography of the infrared coating 21 to improve the flatness of the infrared coating 21 . The thermal expansion coefficient of the transition layer 40 matches the thermal expansion coefficient of the infrared coating 21 , the thermal expansion coefficient of the substrate 10 and the heating layer 30 . In addition, the transition layer 40 has a smooth surface, no cracks, and a complete surface morphology after sintering, and the transition layer 40 is not in contact with the infrared coating 21 during the preparation process. Mutual erosion occurs.
本申请第二实施例提供的所述加热器件200在传统技术以及本申请第一实施例中的红外涂层的表面上连接所述过渡层40，以对所述红外涂层21的表面形貌进行修饰，提升所述红外涂层21的平整性，在制备所述加热层30过程中降低阴影效应，使扩散效应占主导作用，提升所述加热层30的致密度、结合力、厚度均匀性及表面漫反射。The heating device 200 provided in the second embodiment of the application is connected to the transition layer 40 on the surface of the infrared coating in traditional technology and the first embodiment of the application to modify the surface topography of the infrared coating 21 Modify to improve the flatness of the infrared coating 21, reduce the shadow effect in the process of preparing the heating layer 30, make the diffusion effect dominate, and improve the density, bonding force, and thickness uniformity of the heating layer 30 and surface diffuse reflection.
现通过实施例对本申请进行进一步说明。The present application will now be further described through examples.
实施例1Example 1
(1)、提供石英基体，石英基体呈管状结构且石英基体能耐超过800℃的高温。(1) Provide a quartz substrate. The quartz substrate has a tubular structure and can withstand high temperatures exceeding 800°C.
(2)、通过喷墨打印的方法在石英基体的外表面上制备锑掺杂氧化锡红外涂层。(2) Preparing an antimony-doped tin oxide infrared coating on the outer surface of the quartz substrate through inkjet printing.
(3)、通过磁控溅射的方法在锑掺杂氧化锡红外涂层的外表面上制备银加热层，得到加热器件。(3) Prepare a silver heating layer on the outer surface of the antimony-doped tin oxide infrared coating by magnetron sputtering to obtain a heating device.
实施例2Example 2
(1)、提供石英基体，石英基体呈管状结构，且石英基体能耐超过800℃的高温。(1) Provide a quartz substrate. The quartz substrate has a tubular structure and can withstand high temperatures exceeding 800°C.
(2)、通过喷墨打印的方法在石英基体的外表面上制备锑掺杂氧化锡红外涂层。其中，锑掺杂氧化锡红外涂层的表面具有凹凸结构以及多孔结构。(2) Preparing an antimony-doped tin oxide infrared coating on the outer surface of the quartz substrate through inkjet printing. Among them, the surface of the antimony-doped tin oxide infrared coating has a concave and convex structure and a porous structure.
(3)、通过喷涂的方法在锑掺杂氧化锡红外涂层的外表面上制备玻璃釉过渡层，使玻璃釉过渡层覆盖凹凸结构以及使部分玻璃釉过渡层填充于所述多孔结构内。(3) Prepare a glass glaze transition layer on the outer surface of the antimony-doped tin oxide infrared coating by spraying, so that the glass glaze transition layer covers the concave and convex structure and partially fills the porous structure.
(4)、通过磁控溅射的方法在玻璃釉过渡层的外表面上制备银加热层，得到加热器件。(4) Prepare a silver heating layer on the outer surface of the glass glaze transition layer by magnetron sputtering to obtain a heating device.
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。The technical features of the above-described embodiments can be combined in any way. To simplify the description, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, All should be considered to be within the scope of this manual.
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对申请专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。 The above-described embodiments only express several implementation modes of the present application, and their descriptions are relatively specific and detailed, but they should not be construed as limiting the scope of the patent application. It should be noted that, for those of ordinary skill in the art, several modifications and improvements can be made without departing from the concept of the present application, and these all fall within the protection scope of the present application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims (11)

  1. 一种加热器件的制备方法，其特征在于，包括以下步骤：A method for preparing a heating device, characterized in that it includes the following steps:
    提供基体，所述基体具有腔室；providing a base body having a cavity;
    在所述基体的外表面上制备红外涂层；以及Preparing an infrared coating on the outer surface of the substrate; and
    在所述红外涂层的外表面上制备加热层，所述加热层为电阻膜且完全覆盖所述红外涂层。A heating layer is prepared on the outer surface of the infrared coating. The heating layer is a resistive film and completely covers the infrared coating.
  2. 如权利要求1所述的加热器件的制备方法，其特征在于，制备所述加热层的方法包括磁控溅射、喷涂、多弧离子镀以及蒸发中的至少一种。The method of preparing a heating device according to claim 1, wherein the method of preparing the heating layer includes at least one of magnetron sputtering, spraying, multi-arc ion plating and evaporation.
  3. 如权利要求1或2所述的加热器件的制备方法，其特征在于，制备所述红外涂层的方法包括丝网印刷、喷涂以及喷墨打印中的至少一种。The method of preparing a heating device according to claim 1 or 2, wherein the method of preparing the infrared coating includes at least one of screen printing, spray coating and inkjet printing.
  4. 如权利要求1至3中任一项所述的加热器件的制备方法，其特征在于，在制备所述红外涂层之后，且在制备所述加热层之前，所述制备方法还包括：The preparation method of a heating device according to any one of claims 1 to 3, characterized in that, after preparing the infrared coating and before preparing the heating layer, the preparation method further includes:
    在所述红外涂层的外表面上制备过渡层。A transition layer is prepared on the outer surface of the infrared coating.
  5. 如权利要求1至4中任一项所述的加热器件的制备方法，其特征在于，制备所述过渡层的方法包括丝网印刷、喷涂以及喷墨打印中的至少一种。The method of preparing a heating device according to any one of claims 1 to 4, wherein the method of preparing the transition layer includes at least one of screen printing, spray coating and inkjet printing.
  6. 一种加热器件，其特征在于，包括：A heating device, characterized in that it includes:
    基体，所述基体具有腔室；A base body having a cavity;
    红外涂层，连接于所述基体的外表面上；以及an infrared coating attached to the outer surface of the substrate; and
    加热层，连接于所述红外涂层的外表面上，所述加热层为电阻膜且完全覆盖所述红外涂层。A heating layer is connected to the outer surface of the infrared coating. The heating layer is a resistive film and completely covers the infrared coating.
  7. 如权利要求6所述的加热器件，其特征在于，所述加热层的材质包括银钯、铬、银、钨、银钯合金、铬合金、银合金以及钨合金中的至少一种。The heating device according to claim 6, wherein the heating layer is made of at least one of silver palladium, chromium, silver, tungsten, silver palladium alloy, chromium alloy, silver alloy and tungsten alloy.
  8. 如权利要求6或7所述的加热器件，其特征在于，所述基体呈管状结构。The heating device according to claim 6 or 7, characterized in that the base body has a tubular structure.
  9. 如权利要求6至8中任一项所述的加热器件，其特征在于，所述基体的材质包括石英、高硼硅玻璃、微晶玻璃以及透明陶瓷中的至少一种。The heating device according to any one of claims 6 to 8, wherein the material of the substrate includes at least one of quartz, borosilicate glass, crystallized glass and transparent ceramics.
  10. 如权利要求6至9中任一项所述的加热器件，其特征在于，所述加热器 件还包括：The heating device according to any one of claims 6 to 9, characterized in that the heater Items also include:
    过渡层，所述过渡层位于所述红外涂层和所述加热层之间。A transition layer is located between the infrared coating and the heating layer.
  11. 如权利要求6至10中任一项所述的加热器件，其特征在于，所述过渡层的材质包括玻璃釉、二氧化硅以及氧化铝中的至少一种。 The heating device according to any one of claims 6 to 10, wherein the material of the transition layer includes at least one of glass glaze, silicon dioxide and aluminum oxide.
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