WO2024011442A1 - Bonding assembly, micro electronic component and bonding backplate - Google Patents

Bonding assembly, micro electronic component and bonding backplate Download PDF

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Publication number
WO2024011442A1
WO2024011442A1 PCT/CN2022/105370 CN2022105370W WO2024011442A1 WO 2024011442 A1 WO2024011442 A1 WO 2024011442A1 CN 2022105370 W CN2022105370 W CN 2022105370W WO 2024011442 A1 WO2024011442 A1 WO 2024011442A1
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WO
WIPO (PCT)
Prior art keywords
electrode
conductive
binding
receiving
microelectronic device
Prior art date
Application number
PCT/CN2022/105370
Other languages
French (fr)
Chinese (zh)
Inventor
马刚
Original Assignee
厦门市芯颖显示科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 厦门市芯颖显示科技有限公司 filed Critical 厦门市芯颖显示科技有限公司
Priority to PCT/CN2022/105370 priority Critical patent/WO2024011442A1/en
Priority to CN202280002191.8A priority patent/CN117836925A/en
Publication of WO2024011442A1 publication Critical patent/WO2024011442A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Definitions

  • the present application relates to the technical field of electronic devices, and in particular to a binding assembly, a micro electronic component and a binding backplane.
  • Micro LED (Micro Light Emitting Diode) display technology is currently widely used in various display devices.
  • LED display backplanes require the transfer and bonding of a large number of Micro LED chips.
  • Repairable technology after bonding is the key to mass production.
  • the repair method in related technologies is generally to first energize the bonded backplane to find the location of the bad pixels. , then use a laser to knock out the chip at the dead pixel position, and then replace it with a chip in the original position or the position of the spare electrode. Finally, the repair core is bonded to the back plate using local heating or overall heating. In this process, it is easy to affect the quality of the solder joints of the surrounding chips that have been soldered, and it also has problems such as difficulty and high repair costs.
  • embodiments of the present application provide a microelectronic component, a binding backplane and a binding assembly, which have the characteristics of simple repair process and low repair cost.
  • an embodiment of the present application provides a binding assembly, including: a microelectronic device; a binding substrate; a first embedded electrode, which is disposed on one side of the microelectronic device and electrically connected to the microelectronic device; A second fitting electrode is provided on one side of the binding substrate and is electrically connected to the binding substrate; wherein the first fitting electrode and the second fitting electrode can be fitted into each other so that the The microelectronic device can be bound to the binding substrate; at least one of the first chimeric electrode and the second chimeric electrode serves as a receiving electrode, and the other serves as an insertion electrode; the receiving electrode includes a conductive A base and an accommodating and fixing structure provided on the conductive base. The accommodating and fixing structure can be inserted by the insertion electrode and fix the insertion electrode.
  • the receiving and fixing structure includes a receiving cavity or a flexible structure.
  • the accommodating and fixed structure includes: a plurality of nano-columns, the plurality of nano-columns are spaced apart from each other, and the gaps between the plurality of nano-columns form the container for accommodating the insertion electrode. Place a cavity.
  • the first chimeric electrode and the second chimeric electrode have the same structure, and the gap distance between any two adjacent nanocolumns in the second chimeric electrode is equal to the gap distance between the second chimeric electrode and the second chimeric electrode.
  • Each of the nanopillars on a chimeric electrode has the same width.
  • the second chimeric electrode and the plurality of nanopillars of the first chimeric electrode are made of the same metal material.
  • the accommodation and fixing structure includes conductive sidewalls, the flexible structure and a conductive sheet; the first conductive sidewall encloses a filling cavity on the first conductive base and is connected with the first conductive substrate.
  • the conductive base is electrically connected; the flexible structure is filled in the filling cavity; the conductive sheet covers the side of the accommodation fixed structure away from the conductive base, and the conductive sheet is electrically connected to the conductive side wall .
  • the insertion electrode includes: a solder layer; a conductive spike disposed on one side of the solder layer, the conductive spike can penetrate the conductive sheet and penetrate into the flexible structure to The conductive sheet is electrically connected to the receiving electrode.
  • the conductive base, the conductive sidewalls and the conductive sheet are made of the same metal material.
  • the thickness of the conductive flake is less than 1 micron.
  • one embodiment of the present application provides a microelectronic component, including: a microelectronic device;
  • the receiving electrode is electrically connected to the microelectronic device.
  • the receiving electrode has a conductive base and a receiving and fixing structure provided on the conductive base.
  • the receiving and fixing structure can be inserted by an insertion electrode on a binding substrate and The insertion electrode is fixed so that the microelectronic device can be bound to the binding substrate.
  • the accommodating and fixed structure includes conductive side walls, a flexible structure and a conductive sheet; the conductive side walls enclose a filling cavity on the conductive base and are electrically connected to the conductive base;
  • the flexible structure is filled in the filling cavity;
  • the conductive sheet covers the side of the accommodating and fixed structure away from the conductive base, and the conductive sheet is electrically connected to the conductive side wall.
  • the accommodating and fixed structure further includes a plurality of nano-columns, which are disposed on a side of the conductive substrate away from the microelectronic device; the plurality of nano-columns are spaced apart from each other, and the plurality of nano-columns are The gap between the posts forms a receiving cavity for receiving the inserted electrode.
  • a binding backplane including: a binding substrate; a receiving electrode electrically connected to the microelectronic device, the receiving electrode having a conductive base and a housing disposed on the conductive base
  • a fixing structure the accommodating and fixing structure can be inserted into an insertion electrode on a microelectronic device and fix the insertion electrode; so that the microelectronic device can be bound to the binding substrate.
  • the accommodating and fixed structure includes conductive side walls, a flexible structure and a conductive sheet; the conductive side walls enclose a filling cavity on the conductive base and are electrically connected to the conductive base;
  • the flexible structure is filled in the filling cavity;
  • the conductive sheet covers the side of the accommodating and fixed structure away from the conductive base, and the conductive sheet is electrically connected to the conductive side wall.
  • the receiving electrode further includes: a plurality of nano-columns disposed on a side of the conductive substrate away from the microelectronic device; the plurality of nano-columns are spaced apart from each other. Gaps between the plurality of nanopillars form the accommodation cavity for accommodating the inserted electrode.
  • the above-mentioned embodiments of the present application at least have one or more of the following beneficial effects: by arranging receiving electrodes with accommodating and fixing structures on microelectronic devices or binding substrates, the receiving electrodes and the insertion electrical contacts can be fitted into each other, and the The microelectronic devices and the binding substrate are bound without heating and welding. After repair, the entire surface can be heated and welded or wirelessly heated and welded, which can reduce the adverse impact on peripheral devices during the repair process.
  • the above-mentioned embodiments of the present application at least have one or more of the following beneficial effects: by arranging receiving electrodes with accommodating and fixing structures on microelectronic devices or binding substrates, the receiving electrodes and the insertion electrical contacts can be fitted into each other, and the The microelectronic devices and the binding substrate are bound without heating and welding. After repair, the entire surface can be heated and welded or wirelessly heated and welded, which can reduce the adverse impact on peripheral devices during the repair process.
  • Figure 1 is a schematic structural diagram of a binding component provided by the first embodiment of the present application.
  • FIG. 2 is a schematic structural diagram of a specific embodiment of the binding component shown in FIG. 1 .
  • FIG. 3 is a schematic structural diagram of another specific embodiment of the binding component shown in FIG. 2 .
  • FIG. 4 is a schematic flowchart of the repair method of the binding component shown in FIG. 2 .
  • Figure 5 is a schematic structural diagram of a binding component provided by the second embodiment of the present application.
  • FIG. 6 is a schematic structural diagram of a specific embodiment of the binding component shown in FIG. 5 .
  • FIG. 7 is a schematic flowchart of the repair method of the binding component shown in FIG. 6 .
  • FIG. 8 is a schematic structural diagram of a microelectronic component provided by the third embodiment of the present application.
  • Figure 9 is a schematic structural diagram of a micro electronic component provided by the fourth embodiment of the present application.
  • Figure 10 is a schematic structural diagram of a binding backplane provided by the fifth embodiment of the present application.
  • Figure 11 is a schematic structural diagram of a binding backplane provided by the sixth embodiment of the present application.
  • Micro LED there are mainly two types of binding of Micro LED.
  • One is to set an adhesive layer on the driver circuit board and attach the Micro LED to the driver circuit board.
  • the LED is transferred to the adhesive layer and the adhesive layer is heated to make the adhesive material adhere to the Micro LED and realize the bonding connection between the Micro LED and the driver circuit board.
  • the other is to set welding electrodes on the drive circuit board and heat the welding to make the Micro
  • the electrodes of the LED are soldered to the electrodes on the circuit board.
  • Both binding methods have some flaws in the binding repair process of Micro LED. For example, in the adhesive method, since the adhesive layer loses its viscosity after the first transfer, it is necessary to remove the failed adhesive layer on the spare electrode and replenish it with new adhesive before transferring a new chip to the spare electrode position.
  • the first embodiment of the present application provides a binding assembly 10, which includes a microelectronic device 11, a binding substrate 12, and an electrical circuit disposed on one side of the microelectronic device 11.
  • the first fitting electrode 13 connected to the microelectronic device 11 is provided on one side of the binding substrate 12 and is electrically connected to the second fitting electrode 14 of the binding substrate 12 .
  • the first fitting electrode 13 and the second fitting electrode 14 can be fitted with each other so that the microelectronic device 11 can be bound to the binding substrate 12 .
  • At least one of the first fitting electrode 13 and the second fitting electrode 14 serves as the receiving electrode 15 , and the other serves as the insertion electrode 16 .
  • the receiving electrode 15 includes a conductive base 151 and an accommodating and fixing structure 152 provided on the conductive base 151.
  • the accommodating and fixing structure 152 can be inserted by the insertion electrode 16 and fix the insertion electrode 16.
  • the microelectronic device 11 is, for example, a microlight-emitting device, specifically a Micro LED chip. As shown in FIG. 1, it is a flip-chip Micro LED chip, which has a P-type semiconductor layer and an N-type semiconductor layer.
  • the P-type semiconductor A first fitting electrode 13 is provided on each of the N-type semiconductor layer and the N-type semiconductor layer.
  • the corresponding binding substrate 12 is, for example, a Micro LED drive circuit board, and two second fitting electrodes 14 are provided on the binding substrate 12 corresponding to one Micro LED chip.
  • a plurality of second fitting electrodes 14 that can bind a plurality of Micro LED chips are provided on the binding substrate 12 .
  • FIG. 1 only shows that the microelectronic device 11 is a flip-chip Micro LED chip.
  • the microelectronic device 11 can also be a vertical Micro LED chip, for example, in the P-type semiconductor layer of the vertical Micro LED chip.
  • a first fitting electrode 13 is arranged on the binding substrate 12, and a second fitting electrode 14 is arranged on the binding substrate 12 corresponding to a Micro LED binding position. Referring to FIG. 2 , for example, the second fitting electrode 14 on the binding substrate 12 serves as the receiving electrode 15 , and the first fitting electrode 13 on the microelectronic device 11 serves as the insertion electrode 16 .
  • the first fitting electrode 13 on the microelectronic device 11 shown in FIG. 3 may be used as the receiving electrode 15 and the second fitting electrode 14 on the bonded substrate 12 may be used as the insertion electrode 16.
  • the first fitting electrode 13 and the second fitting electrode 14 are inserted into each other, which can be understood as both serving as the receiving electrode 15 , or it can also be understood that the first fitting electrode 13 and the second fitting electrode 14 each have a conductive base 151 and a receiving and fixing structure 152 provided on the conductive base 151.
  • the receiving and fixing structure 152 on the first fitting electrode 13 can be inserted into and fixed by the second fitting electrode 14.
  • the accommodating and fixing structure 152 on the first fitting electrode 13 can be inserted into and fix the first fitting electrode 13 .
  • the accommodating fixed structure 152 includes an accommodating cavity 1525 or a flexible structure 1522 .
  • the accommodating and fixing structure 152 includes a conductive side wall 1521 , a flexible structure 1522 and a conductive sheet 1523 .
  • the first conductive sidewall 1521 encloses a filling cavity 1526 on the first conductive base 151 and is electrically connected to the conductive base 151 .
  • Flexible structure 1522 fills filling cavity 1526.
  • the conductive sheet 1523 covers the side of the accommodating fixed structure 152 away from the conductive base 151 , and the conductive sheet 1523 is electrically connected to the conductive side wall 1521 .
  • the conductive base 151, the conductive sidewalls 1521 and the conductive sheet 1523 are all made of metal materials.
  • the material of the conductive base 151 can be, for example, the pad material used in traditional drive bonding backplanes, such as copper, nickel, gold, silver and other metals. One type or combination, with a thickness ranging from about 1 to 2 microns.
  • the conductive base 151 , the conductive sidewall 1521 and the conductive sheet 1523 can be made of the same metal material or different metal materials.
  • the flexible structure 1522 may be, for example, a soft material such as silicone, resin, or photoresist.
  • the hardness of the flexible structure 1522 may be, for example, 40 to 80 HA (Shore A hardness).
  • the thickness of the conductive sidewall 1521 and the flexible structure 1522 is about 1 to 2 microns, and the thickness of the conductive sheet 1523 is less than 1 micron, for example, between 300 and 500 nanometers. The thinner thickness makes it easy to be inserted and electrically connected by the insertion electrode 16 .
  • the insertion electrode 16 may include, for example, a solder layer 161 and a conductive spike 162 disposed on one side of the solder layer 161 .
  • the conductive spike 162 may penetrate the conductive sheet 1523 and penetrate into the flexible structure 1522 to pass through the conductive sheet 1523
  • the insertion electrode 16 and the receiving electrode 15 are electrically connected.
  • the diameter of the conductive spikes 162 is less than 1 micron, for example, between 500 nanometers and 1 micron, and the height is, for example, between 1 and 2 microns, so that the conductive spikes 162 can better penetrate the conductive sheet 1523 .
  • the solder layer 161 may use conventional solder metals such as tin, nickel, copper, indium, bismuth or alloys thereof.
  • the solder layer 161 is provided on the P electrode and N electrode of the Micro LED, for example.
  • the second fitting electrode 14 is used as the insertion electrode 16 as shown in FIG. 3 (that is, the insertion electrode 16 is provided on the binding substrate 12)
  • the solder layer 161 is provided on the pad layer of the binding substrate 12, for example. superior.
  • the preparation process of the receiving electrode 15 may include, for example, the following steps: providing a binding substrate 12 (or a microelectronic device 11), and reserving at least one spare electrode position on the binding substrate 12 in addition to the conventional electrode positions.
  • Electrode positions forming a conductive substrate corresponding to each electrode position; forming a conductive side wall on the side of the conductive substrate away from the binding substrate 12 (or the microelectronic device 11), and enclosing a filling cavity on each conductive substrate; for example, using Coat a flexible material layer (such as a silicone layer) on the side of the binding substrate 12 (or the microelectronic device 11) adjacent to the conductive substrate by spin coating or other methods; etching unnecessary parts of the flexible material layer (ie, except for each filled cavity) other parts); a conductive sheet is formed on the side of the flexible material layer away from the binding substrate 12 .
  • a flexible material layer such as a silicone layer
  • the formation process of the conductive base, conductive sidewalls and conductive sheets can be, for example, an evaporation process, and can be grown only at the locations where growth is required through a mask process.
  • the step of removing excess flexible material may also be performed after forming the conductive sheet.
  • FIG. 4 is a schematic flowchart of the repair method of the binding component 10 shown in FIG. 2 .
  • the figure only shows two sets of second fitting electrodes 14 on the binding substrate 12, one of which is a backup electrode, but this embodiment is not limited thereto.
  • step (a) of FIG. 4 the microelectronic device 11 and the binding substrate 12 in the binding assembly 10 are respectively provided.
  • the first fitting electrode 13 provided on the microelectronic device 11 serves as the insertion electrode 16
  • the second fitting electrode 14 serves as the receiving electrode 15 . Bind the microelectronic device 11 to a set of electrodes on the left side of the binding substrate 12.
  • the conductive spikes 162 on the inserted electrodes 16 penetrate the conductive thin sheets 1523 on the receiving electrode 15 and penetrate into the flexible structure.
  • the structure after the first binding shown in step (b) in Figure 4 is obtained.
  • the conductive spike 162 inserted into the electrode 16 is stuck and fixed by the conductive sheet 1523 and the flexible structure 1522.
  • the conductive spike 162 The pad layer 161 is in contact with the conductive sheet 1523 to achieve electrical connection.
  • the binding substrate 12 is powered on to drive the microelectronic device 11. If the microelectronic device 11 emits light, the binding is normal.
  • step (c) the right group of receiving electrodes 15 (that is, the backup electrodes) has not undergone a bonding process.
  • step (d) a new microelectronic device 11 can be transferred to the position of the group of backup electrodes.
  • the conductive spikes 162 on the insertion electrode 16 of the new microelectronic device 11 are caused to pierce the conductive sheet 1523 on the receiving electrode 15 and penetrate into the flexible structure 1522 to obtain the repaired structure shown in step (d) in Figure 4 At this time, the conductive spike 162 inserted into the electrode 16 is caught and fixed by the conductive sheet 1523 and the flexible structure 1522.
  • the conductive spike 162 and the pad layer 161 contact the conductive sheet 1523 to achieve electrical connection. You can check again whether the binding of the backup electrode is normal. If the binding is abnormal, you can continue to perform the above repair steps. If the binding is normal, you can heat the binding substrate 12 as a whole to melt the pad layer 161 to achieve the entire panel.
  • a second embodiment of the present application provides another binding component 10, which includes a microelectronic device 11, a binding substrate 12, and is disposed on one side of the microelectronic device 11 and electrically connected
  • the first fitting electrode 13 of the microelectronic device 11 is disposed on one side of the binding substrate 12 and is electrically connected to the second fitting electrode 14 of the binding substrate 12 .
  • the first fitting electrode 13 and the second fitting electrode 14 can be fitted with each other so that the microelectronic device 11 can be bound to the binding substrate 12 .
  • At least one of the first fitting electrode 13 and the second fitting electrode 14 serves as the receiving electrode 15 , and the other serves as the insertion electrode 16 .
  • the receiving electrode 15 includes a conductive base 151 and an accommodating and fixing structure 152 provided on the conductive base 151.
  • the accommodating and fixing structure 152 can be inserted by the insertion electrode 16 and fix the insertion electrode 16.
  • the microelectronic device 11 is, for example, a microlight-emitting device, specifically a Micro LED chip. As shown in FIG. 5 , it is a flip-chip Micro LED chip, which has a P-type semiconductor layer and an N-type semiconductor layer.
  • the P-type semiconductor layer A first fitting electrode 13 is provided on each of the N-type semiconductor layer and the N-type semiconductor layer.
  • the corresponding binding substrate 12 is, for example, a Micro LED drive circuit board, and two second fitting electrodes 14 are provided on the binding substrate 12 corresponding to one Micro LED chip.
  • a plurality of second fitting electrodes 14 that can bind a plurality of Micro LED chips are provided on the binding substrate 12 .
  • FIG. 5 only shows that the microelectronic device 11 is a flip-chip Micro LED chip.
  • the microelectronic device 11 can also be a vertical Micro LED chip, for example, on the P-type semiconductor of the vertical Micro LED chip.
  • a first fitting electrode 13 is provided, and a second fitting electrode 14 is provided on the binding substrate 12 corresponding to a Micro LED binding position.
  • the second fitting electrode 14 on the binding substrate 12 serves as the receiving electrode 15, and the first fitting electrode 13 on the microelectronic device 11 serves as the insertion electrode 16.
  • the first embedded electrode 13 on the microelectronic device 11 may serve as the receiving electrode 15 and the second embedded electrode 14 on the binding substrate 12 may serve as the insertion electrode 16 .
  • the first fitting electrode 13 and the second fitting electrode 14 can be inserted into each other, which can be understood as both receiving electrodes 15, or as the first fitting electrode.
  • the electrode 13 and the second embedded electrode 14 each have a conductive base 151 and a receiving and fixing structure 152 provided on the conductive base 151.
  • the receiving and fixing structure 152 on the first embedded electrode 13 can be inserted into the second embedded electrode 14 and The second fitting electrode 14 is fixed, and the accommodation and fixing structure 152 on the second fitting electrode 14 can be inserted into and fixed by the first fitting electrode 13 .
  • the accommodating fixed structure 152 includes an accommodating cavity 1525 or a flexible structure 1522 .
  • the accommodating and fixed structure 152 includes, for example, a plurality of nano-columns 1524.
  • the plurality of nano-columns 1524 are spaced apart from each other.
  • the gaps between the plurality of nano-columns 1524 form accommodating cavities 1525 for accommodating the inserted electrodes 16.
  • the height of each nano-column 1524 is, for example, 2 to 3 microns (the overall thickness of the receiving electrode 15 is 3 to 4 microns), and the width (or diameter) of each nano column 1524 is, for example, 200 to 200 microns.
  • the gap between two adjacent nano-columns 1524 is basically equal to the width of each nano-column 1524, that is, the gap between two adjacent nano-columns 1524 is approximately 200 to 500 nanometers.
  • the structures of the first chimeric electrode 13 and the second chimeric electrode 14 are the same, so the gap distance between two adjacent nanopillars in the first chimeric electrode 13 is the same as the gap distance between each nanocolumn on the second chimeric electrode 14 .
  • Each nanopillar 1524 has the same width.
  • the gap distance between two adjacent nano-columns in the second embedded electrode 14 is equal to the width of each nano-column 1524 on the first embedded electrode 13 .
  • the plurality of nanopillars 1524 of the first embedded electrode 13 and the second embedded electrode 14 can be in contact with each other and fixed.
  • the plurality of nano-columns 1524 are made of metal material, such as copper, nickel metal, etc.
  • the metal material has better ductility, so that the first fitting electrode 13 and the second fitting electrode 14 interpenetrate each other. Slight deformation can occur for better bonding and not easy to damage.
  • the plurality of nanopillars 1524 on the first embedded electrode 13 and the second embedded electrode 14 are made of the same metal, for example.
  • the nano-rods 1524 of one of the first embedded electrode 13 and the second embedded electrode 14 may be made of weldable materials such as tin, nickel, copper, indium, bismuth or alloys thereof, and the nano-pillars 1524 of the other may be made of copper. , nickel and other metals that can be mutually melted with the welding material, the first fitting electrode 13 and the second fitting electrode 14 can be heated and welded.
  • the preparation process of the receiving electrode 15 may include, for example, the following steps: providing a binding substrate 12 (or a microelectronic device 11), and reserving at least one spare electrode position on the binding substrate 12 in addition to the conventional electrode positions. Electrode positions; a conductive substrate is formed corresponding to each electrode position; multiple nano-columns are formed on the side of the conductive substrate away from the binding substrate 12 (or the microelectronic device 11); the formation process of the conductive substrate and multiple nano-columns can be evaporation. Plating or chemical plating.
  • metal can be used to form an integral metal block at each electrode position, and then a plurality of nanopillars can be etched on the metal block through processes such as etching.
  • etching etching
  • FIG. 7 it is a schematic flow chart of the repair method of the binding component 10 shown in FIG. 6 .
  • the figure only shows two sets of second fitting electrodes 14 on the binding substrate 12, one of which is a backup electrode, but this embodiment is not limited thereto.
  • step (a) of FIG. 7 the microelectronic device 11 and the binding substrate 12 in the binding assembly 10 are provided respectively.
  • the first fitting electrode 13 provided on the microelectronic device 11 and the second fitting electrode 13 on the binding substrate 12 are provided respectively.
  • Each of the embedded electrodes 14 has a receiving and fixing structure 152 , that is, the first embedded electrode 13 and the second embedded electrode 14 serve as the receiving electrode 15 and the inserting electrode 16 for each other.
  • step (a) the microelectronic device 11 is bound to a set of electrodes on the left side of the binding substrate 12 .
  • the plurality of nanopillars of the first embedded electrode 13 and the second embedded electrode 14 are formed. 1524 are interspersed with each other to obtain the structure after the first transfer as shown in step (b) of Figure 7 .
  • the binding substrate 12 is powered on to drive the microelectronic device 11. If the microelectronic device 11 emits light, the binding is normal.
  • step (c) of FIG. 7 the binding is abnormal and needs to be repaired.
  • the first abnormally bound microelectronic device 11 is removed in step (c) of FIG. 7 .
  • the right set of backup electrodes has not undergone a bonding process.
  • step (d) a new microelectronic device 11 can be transferred to the position of this set of backup electrodes.
  • the first fitting electrode 13 of the new microelectronic device 11 and the second fitting electrode 14 at the spare electrode position are interleaved with each other to obtain the repaired structure shown in step (d) in FIG. 7 . You can recheck whether the binding of the spare electrode position is normal. If the binding is abnormal, you can continue with the above repair steps.
  • the "burr" shape of the nanocolumn 1524 can already make the microelectronic device 11 and the binding substrate 12 stably combined, and the binding is completed without heating and welding, which can reduce the influence of heating and welding.
  • the nano-columns 1524 of one of the first fitting electrode 13 and the second fitting electrode 14 can be selected as the welding material, and the nano-columns 1524 of the other one can be made of a metal material that can be interfused with the welding material. , then all the microelectronic devices 11 on the entire binding substrate 12 can be integrally heated and welded after the last transfer.
  • the third embodiment of the present application provides a microelectronic component 20 , which includes a microelectronic device 11 and a receiving electrode 15 .
  • the receiving electrode 15 is electrically connected to the microelectronic device 11 .
  • the receiving electrode 15 has a conductive base 151 and a receiving and fixing structure 152 arranged on the conductive base 151.
  • the receiving and fixing structure 152 can be inserted into and fixed by an insertion electrode on a binding substrate, so that the microelectronic device 11 can be bound. fixed on the binding substrate.
  • the micro electronic device 11 is, for example, a micro light-emitting device, specifically, it is a Micro
  • the LED chip shown in Figure 8 is a flip-chip Micro
  • the LED chip has a P-type semiconductor layer and an N-type semiconductor layer, and a receiving electrode 15 is provided on each of the P-type semiconductor layer and the N-type semiconductor layer.
  • the conductive substrate 151 is, for example, the P electrode or N electrode of a traditional Micro LED chip, with a thickness ranging from about 1 to 2 microns.
  • FIG. 8 only shows the structure in which the microelectronic device 11 is a flip-chip Micro LED chip.
  • the microelectronic device 11 may also be a vertical Micro LED chip, for example, in the P-type semiconductor layer of the vertical Micro LED chip.
  • a receiving electrode 15 is provided on it.
  • the accommodating fixed structure 152 includes an accommodating cavity 1525 or a flexible structure 1522 .
  • the accommodating and fixing structure 152 includes a conductive side wall 1521 , a flexible structure 1522 and a conductive sheet 1523 .
  • the first conductive sidewall 1521 encloses a filling cavity 1526 on the first conductive base 151 and is electrically connected to the conductive base 151 .
  • Flexible structure 1522 fills filling cavity 1526.
  • the conductive sheet 1523 covers the side of the accommodating fixed structure 152 away from the conductive base 151 , and the conductive sheet 1523 is electrically connected to the conductive side wall 1521 .
  • the conductive base 151, the conductive sidewalls 1521 and the conductive sheet 1523 are all made of metal materials, such as one or a combination of copper, nickel, gold, silver and other metals.
  • the conductive base 151 , the conductive sidewall 1521 and the conductive sheet 1523 can be made of the same metal material or different metal materials. When they are made of the same metal material, their thermal expansion coefficients are consistent and the binding effect is better.
  • the flexible structure 1522 may be, for example, a soft material such as silicone, resin, or photoresist.
  • the hardness of the flexible structure 1522 may be, for example, 40 to 80 HA (Shore A hardness).
  • the thickness of the conductive sidewall 1521 and the flexible structure 1522 is about 1 to 2 microns, and the thickness of the conductive sheet 1523 is less than 1 micron, for example, between 300 and 500 nanometers. The thinner thickness makes it easy to be bound to the inserted electrode on the substrate. Plug in and connect electrically.
  • the insertion electrode on the binding substrate is arranged in a spike shape to make the bonding easier.
  • the microelectronic component 20 provided in this embodiment can implement a repair method similar to that described in the first embodiment.
  • the fourth embodiment of the present application provides a microelectronic component 20 , which includes a microelectronic device 11 and a receiving electrode 15 .
  • the receiving electrode 15 is electrically connected to the microelectronic device 11 .
  • the receiving electrode 15 has a conductive base 151 and a receiving and fixing structure 152 arranged on the conductive base 151.
  • the receiving and fixing structure 152 can be inserted into and fixed by an insertion electrode on a binding substrate, so that the microelectronic device 11 can be bound. fixed on the binding substrate.
  • the micro electronic device 11 is, for example, a micro light-emitting device, specifically, it is a Micro
  • the LED chip shown in Figure 9 is a flip-chip Micro
  • the LED chip has a P-type semiconductor layer and an N-type semiconductor layer, and a receiving electrode 15 is provided on each of the P-type semiconductor layer and the N-type semiconductor layer.
  • the conductive substrate 151 is, for example, the P electrode or N electrode of a traditional Micro LED chip, with a thickness ranging from about 1 to 2 microns.
  • FIG. 9 only shows the structure in which the microelectronic device 11 is a flip-chip Micro LED chip.
  • the microelectronic device 11 may also be a vertical Micro LED chip, for example, in the P-type semiconductor layer of the vertical Micro LED chip.
  • a receiving electrode 15 is provided on it.
  • the accommodating and fixed structure 152 includes, for example, a plurality of nanopillars 1524 , and the plurality of nanopillars 1524 are disposed on a side of the conductive substrate 151 away from the microelectronic device 11 .
  • the plurality of nano-columns 1524 are spaced apart from each other, and the gaps between the plurality of nano-columns 1524 form accommodating cavities 1525 for accommodating electrodes inserted on the binding substrate.
  • the height of each nano-column 1524 is, for example, 2 to 3 microns (the overall thickness of the receiving electrode 15 is 3 to 4 microns), and the width (or diameter) of each nano column 1524 is, for example, 200 to 200 microns. Between 500 nanometers, the gap between two adjacent nanocolumns 1524 is basically equal to the width of each nanocolumn 1524, that is, the gap between two adjacent nanocolumns 1524 is about 200 ⁇ 500 nanometers.
  • the plurality of nanopillars 1524 are made of metal, such as copper, nickel, etc. Metal materials have better ductility and can be slightly deformed during the binding process to achieve better bonding and are less likely to be damaged.
  • the microelectronic component 20 provided in this embodiment is provided with a structure of multiple nanopillars 1524, which can be used to set the insertion electrode on the binding substrate to have the same structure as the receiving electrode 15 in this embodiment. Through the mutual interaction between the nanopillars, Interspersed to achieve stable binding, a repair solution similar to the aforementioned second embodiment is implemented.
  • the plurality of nano-columns 1524 accommodating the fixed structure 152 can be metal materials such as copper and nickel, or weldable materials such as tin, nickel, copper, indium, bismuth or alloys thereof. In conjunction with the arrangement of the inserted electrodes on the binding substrate, non-heated welding bonding or heated welding bonding can be implemented.
  • the settings can be made according to actual needs, and this embodiment is not limited thereto.
  • heating and welding can be performed only after the last transfer during the entire transfer and repair process, or no welding is required, and there is no need to perform the single-point heating and welding of the aforementioned related technologies, which will not affect the The quality of the surrounding solder joints.
  • you only need to clear the Micro With LED there is no need to carry out the process of removing the adhesive layer and replenishing the adhesive material in the aforementioned related technologies, making the repair process simpler and more feasible.
  • the fifth embodiment of the present application provides a binding backplane 30, which includes a binding substrate 12 and a receiving electrode 15.
  • the receiving electrode 15 is electrically connected to the microelectronic device 11 .
  • the receiving electrode 15 has a conductive base 151 and a receiving and fixing structure 152 provided on the conductive base 151 .
  • the accommodating and fixing structure 152 can be inserted into an insertion electrode on a microelectronic device and fix the insertion electrode 16 so that the microelectronic device can be bound to the binding substrate 12 .
  • the binding substrate 12 is, for example, a Micro LED driver circuit board.
  • two receiving electrodes 15 are provided on the binding substrate 12 corresponding to one Micro LED chip.
  • a plurality of receiving electrodes 15 capable of binding a plurality of Micro LED chips are provided on the binding substrate 12 .
  • a receiving electrode 15 is provided on the binding substrate 12 corresponding to a Micro LED binding position. As shown in FIG. 10 , only two sets of receiving point electrodes 15 on the binding substrate 12 for binding two Micro LEDs are shown, one of which is, for example, a backup electrode of the other group.
  • the conductive substrate 151 may be, for example, a bonding pad material on a Micro LED driving circuit board, such as one or a combination of copper, nickel, gold, silver and other metals, with a thickness ranging from about 1 to 2 microns.
  • the accommodating fixed structure 152 includes an accommodating cavity 1525 or a flexible structure 1522 .
  • the accommodating and fixing structure 152 includes a conductive side wall 1521 , a flexible structure 1522 and a conductive sheet 1523 .
  • the first conductive sidewall 1521 encloses a filling cavity 1526 on the first conductive base 151 and is electrically connected to the conductive base 151 .
  • Flexible structure 1522 fills filling cavity 1526.
  • the conductive sheet 1523 covers the side of the accommodating fixed structure 152 away from the conductive base 151 , and the conductive sheet 1523 is electrically connected to the conductive side wall 1521 .
  • the conductive base 151, the conductive sidewalls 1521 and the conductive sheet 1523 are all made of metal materials, such as one or a combination of copper, nickel, gold, silver and other metals.
  • the conductive base 151 , the conductive sidewall 1521 and the conductive sheet 1523 can be made of the same metal material or different metal materials. When they are made of the same metal material, their thermal expansion coefficients are consistent and the binding effect is better.
  • the flexible structure 1522 may be, for example, a soft material such as silicone, resin, or photoresist.
  • the hardness of the flexible structure 1522 may be, for example, 40 to 80 HA (Shore A hardness).
  • the thickness of the conductive sidewall 1521 and the flexible structure 1522 is about 1 to 2 microns, and the thickness of the conductive sheet 1523 is less than 1 micron, for example, between 300 and 500 nanometers. The thinner thickness makes it easy to be bound to the inserted electrode on the substrate. Plug in and connect electrically.
  • the insertion electrode on the microelectronic device is arranged in a spike shape to make the combination easier.
  • the binding backplate 30 provided in this embodiment can implement a repair method similar to that described in the first embodiment. During the entire transfer repair process, heating and welding can only be performed after the last transfer, without the need for single-point heating of the aforementioned related technologies.
  • the sixth embodiment of the present application provides a binding backplane 30, which includes a binding substrate 12 and a receiving electrode 15.
  • the receiving electrode 15 is electrically connected to the microelectronic device 11 .
  • the receiving electrode 15 has a conductive base 151 and a receiving and fixing structure 152 provided on the conductive base 151 .
  • the accommodating and fixing structure 152 can be inserted into an insertion electrode on a microelectronic device and fix the insertion electrode 16 so that the microelectronic device can be bound to the binding substrate 12 .
  • the binding substrate 12 is, for example, a Micro LED driver circuit board.
  • two receiving electrodes 15 are provided on the binding substrate 12 corresponding to one Micro LED chip.
  • a plurality of receiving electrodes 15 capable of binding a plurality of Micro LED chips are provided on the binding substrate 12 .
  • a receiving electrode 15 is provided on the binding substrate 12 corresponding to a Micro LED binding position.
  • FIG. 11 only two sets of receiving point electrodes 15 on the binding substrate 12 for binding two Micro LEDs are shown, one of which is, for example, a backup electrode of the other group.
  • the conductive substrate 151 may be, for example, a bonding pad material on a Micro LED driving circuit board, such as one or a combination of copper, nickel, gold, silver and other metals, with a thickness ranging from about 1 to 2 microns.
  • the accommodating and fixed structure 152 includes, for example, a plurality of nanopillars 1524 , and the plurality of nanopillars 1524 are disposed on a side of the conductive substrate 151 away from the microelectronic device 11 .
  • the plurality of nano-columns 1524 are spaced apart from each other, and the gaps between the plurality of nano-columns 1524 form accommodating cavities 1525 for accommodating electrodes inserted on the microelectronic device.
  • the height of each nano-column 1524 is, for example, 2 to 3 microns (the overall thickness of the receiving electrode 15 is 3 to 4 microns), and the width (or diameter) of each nano column 1524 is, for example, 200 to 200 microns. Between 500 nanometers, the gap between two adjacent nanocolumns 1524 is basically equal to the width of each nanocolumn 1524, that is, the gap between two adjacent nanocolumns 1524 is about 200 ⁇ 500 nanometers.
  • the plurality of nanopillars 1524 are made of metal, such as copper, nickel, etc. Metal materials have better ductility and can be slightly deformed during the binding process to achieve better bonding and are less likely to be damaged.
  • the binding backplate 30 provided in this embodiment is provided with a structure of multiple nano-columns 1524, which can be used to set the insertion electrode on the microelectronic device to have the same structure as the receiving electrode 15 in this embodiment, and can pass between the nano-columns 1524.
  • the mutual interpenetration achieves stable binding and implements a repair solution similar to the aforementioned second embodiment.
  • the plurality of nano-columns 1524 accommodating the fixed structure 152 can be made of metal materials such as copper and nickel, or weldable metal materials such as tin, nickel, copper, indium, bismuth or alloys thereof.
  • non-heated welding bonding or heated welding bonding can be implemented.
  • the settings can be made according to actual needs, and this embodiment is not limited thereto.
  • heating and welding can be performed only after the last transfer during the entire transfer repair process, or no welding is required, and there is no need to perform the single-point heating and welding of the aforementioned related technologies, which will not affect the to the surrounding solder joint quality.
  • you only need to clear the Micro With LED there is no need to carry out the process of removing the adhesive layer and replenishing the adhesive material in the aforementioned related technologies, making the repair process simpler and more feasible.

Abstract

A bonding assembly (10), comprising a micro electronic device (11); a bonding substrate (12); a first embedding electrode (13), which is arranged on one side of the micro electronic device (11) and is electrically connected to the micro electronic device (11); and a second embedding electrode (14), which is arranged on one side of the bonding substrate (12) and is electrically connected to the bonding substrate (12). The first embedding electrode (13) and the second embedding electrode (14) can be fitted with each other in an embedded manner so that the micro electronic device (11) can be bonded to the bonding substrate (12); at least one of the first embedding electrode (13) and the second embedding electrode (14) serves as a receiving electrode (15), and the other one serves as an insert electrode (16); and the receiving electrode (15) comprises an electrically conductive base (151) and an accommodating and fixing structure (152) arranged on the electrically conductive base (151), and the accommodating and fixing structure (152) can allow the insert electrode (16) to be inserted therein, and fix the insert electrode (16). The present application has the characteristics of simple repair technology and low repair costs.

Description

绑定组件、微型电子部件及绑定背板Bonding components, micro electronic components and bonding backplanes 技术领域Technical field
本申请涉及电子器件技术领域，尤其涉及一种绑定组件、一种微型电子部件及一种绑定背板。The present application relates to the technical field of electronic devices, and in particular to a binding assembly, a micro electronic component and a binding backplane.
背景技术Background technique
Micro LED（Micro Light Emitting Diode，微型发光二极管）显示技术目前被广泛应用在各类显示设备中，Micro LED显示背板需要进行巨量Micro LED芯片转移和键合，键合后可修复技术是实现量产的关键，相关技术中修复方法一般是先向键合后的背板通电找出坏点位置，然后采用激光将坏点位置的芯片打掉，再在原位置或者备用电极的位置上补上一颗芯片。最后采用局部加热或者整体加热的方式将修补芯bonding（绑定）在背板上。在此过程中容易造成影响周边已经焊接好的芯片的焊点质量，并且具有修复难度大，修复成本高的问题。Micro LED (Micro Light Emitting Diode) display technology is currently widely used in various display devices. LED display backplanes require the transfer and bonding of a large number of Micro LED chips. Repairable technology after bonding is the key to mass production. The repair method in related technologies is generally to first energize the bonded backplane to find the location of the bad pixels. , then use a laser to knock out the chip at the dead pixel position, and then replace it with a chip in the original position or the position of the spare electrode. Finally, the repair core is bonded to the back plate using local heating or overall heating. In this process, it is easy to affect the quality of the solder joints of the surrounding chips that have been soldered, and it also has problems such as difficulty and high repair costs.
技术问题technical problem
因此，亟需提供一种新的方案以解决上述Micro LED显示背板传统绑定工艺的至少部分问题。Therefore, there is an urgent need to provide a new solution to solve at least some of the above-mentioned problems of the traditional bonding process of Micro LED display backplanes.
技术解决方案Technical solutions
因此，为克服现有技术中的至少部分缺陷，本申请实施例提供了一种微型电子部件、一种绑定背板和一种绑定组件，具有修复工艺简单，修复成本低的特点。Therefore, in order to overcome at least some of the defects in the prior art, embodiments of the present application provide a microelectronic component, a binding backplane and a binding assembly, which have the characteristics of simple repair process and low repair cost.
一方面，本申请一个实施例提供一种绑定组件，包括：微型电子器件；绑定基板；第一嵌合电极，设置在所述微型电子器件的一侧且电连接所述微型电子器件；第二嵌合电极，设置在所述绑定基板的一侧且电连接所述绑定基板；其中，所述第一嵌合电极和所述第二嵌合电极可相互嵌合以使得所述微型电子器件可绑定于所述绑定基板；所述第一嵌合电极和所述第二嵌合电极中的至少一者作为接收电极，另一者作为***电极；所述接收电极包括导电基底和设置在所述导电基底上的容置固定结构，所述容置固定结构可被所述***电极***并固定所述***电极。On the one hand, an embodiment of the present application provides a binding assembly, including: a microelectronic device; a binding substrate; a first embedded electrode, which is disposed on one side of the microelectronic device and electrically connected to the microelectronic device; A second fitting electrode is provided on one side of the binding substrate and is electrically connected to the binding substrate; wherein the first fitting electrode and the second fitting electrode can be fitted into each other so that the The microelectronic device can be bound to the binding substrate; at least one of the first chimeric electrode and the second chimeric electrode serves as a receiving electrode, and the other serves as an insertion electrode; the receiving electrode includes a conductive A base and an accommodating and fixing structure provided on the conductive base. The accommodating and fixing structure can be inserted by the insertion electrode and fix the insertion electrode.
在一个实施例中，所述容置固定结构包括容置空腔或柔性结构。In one embodiment, the receiving and fixing structure includes a receiving cavity or a flexible structure.
在一个实施例中，所述容置固定结构包括：多个纳米柱，所述多个纳米柱相互间隔设置，所述多个纳米柱之间的间隙形成容置所述***电极的所述容置空腔。In one embodiment, the accommodating and fixed structure includes: a plurality of nano-columns, the plurality of nano-columns are spaced apart from each other, and the gaps between the plurality of nano-columns form the container for accommodating the insertion electrode. Place a cavity.
在一个实施例中，所述第一嵌合电极和所述第二嵌合电极结构相同，所述第二嵌合电极中任意相邻两个所述纳米柱之间的间隙距离与所述第一嵌合电极上每个所述纳米柱的宽度相等。In one embodiment, the first chimeric electrode and the second chimeric electrode have the same structure, and the gap distance between any two adjacent nanocolumns in the second chimeric electrode is equal to the gap distance between the second chimeric electrode and the second chimeric electrode. Each of the nanopillars on a chimeric electrode has the same width.
在一个实施例中，所述第二嵌合电极与所述第一嵌合电极的所述多个纳米柱采用同种金属材料。In one embodiment, the second chimeric electrode and the plurality of nanopillars of the first chimeric electrode are made of the same metal material.
在一个实施例中，所述容置固定结构包括导电侧壁、所述柔性结构和导电薄片；所述第一导电侧壁在所述第一导电基底上围合形成填充腔，且与所述导电基底电连接；所述柔性结构填充于所述填充腔中；所述导电薄片覆盖在所述容置固定结构远离所述导电基底的一侧，所述导电薄片与所述导电侧壁电连接。In one embodiment, the accommodation and fixing structure includes conductive sidewalls, the flexible structure and a conductive sheet; the first conductive sidewall encloses a filling cavity on the first conductive base and is connected with the first conductive substrate. The conductive base is electrically connected; the flexible structure is filled in the filling cavity; the conductive sheet covers the side of the accommodation fixed structure away from the conductive base, and the conductive sheet is electrically connected to the conductive side wall .
在一个实施例中，所述***电极包括：焊料层； 导电尖刺，设置在所述焊料层的一侧，所述导电尖刺可贯穿所述导电薄片并刺入所述柔性结构中，以通过所述导电薄片与所述接收电极电连接。In one embodiment, the insertion electrode includes: a solder layer; a conductive spike disposed on one side of the solder layer, the conductive spike can penetrate the conductive sheet and penetrate into the flexible structure to The conductive sheet is electrically connected to the receiving electrode.
在一个实施例中，所述导电基底、所述导电侧壁和所述导电薄片为同种金属材料。In one embodiment, the conductive base, the conductive sidewalls and the conductive sheet are made of the same metal material.
在一个实施例中，所述导电薄片的厚度小于1微米。In one embodiment, the thickness of the conductive flake is less than 1 micron.
另一方面，本申请一个实施例提供一种微型电子部件，包括：微型电子器件；On the other hand, one embodiment of the present application provides a microelectronic component, including: a microelectronic device;
接收电极，电连接所述微型电子器件，所述接收电极具有导电基底和设置在所述导电基底上的容置固定结构，所述容置固定结构可被一绑定基板上的***电极***并固定所述***电极；以使所述微型电子器件可绑定于所述绑定基板上。The receiving electrode is electrically connected to the microelectronic device. The receiving electrode has a conductive base and a receiving and fixing structure provided on the conductive base. The receiving and fixing structure can be inserted by an insertion electrode on a binding substrate and The insertion electrode is fixed so that the microelectronic device can be bound to the binding substrate.
在一个实施例中，所述容置固定结构包括导电侧壁、柔性结构和导电薄片；所述导电侧壁在所述导电基底上围合形成填充腔，且与所述导电基底电连接；所述柔性结构填充于所述填充腔中；所述导电薄片覆盖在所述容置固定结构远离所述导电基底的一侧，所述导电薄片与所述导电侧壁电连接。In one embodiment, the accommodating and fixed structure includes conductive side walls, a flexible structure and a conductive sheet; the conductive side walls enclose a filling cavity on the conductive base and are electrically connected to the conductive base; The flexible structure is filled in the filling cavity; the conductive sheet covers the side of the accommodating and fixed structure away from the conductive base, and the conductive sheet is electrically connected to the conductive side wall.
在一个实施例中，所述容置固定结构还包括多个纳米柱，设置在所述导电基底远离所述微型电子器件的一侧；所述多个纳米柱相互间隔设置，所述多个纳米柱之间的间隙形成容纳所述***电极的容置空腔。In one embodiment, the accommodating and fixed structure further includes a plurality of nano-columns, which are disposed on a side of the conductive substrate away from the microelectronic device; the plurality of nano-columns are spaced apart from each other, and the plurality of nano-columns are The gap between the posts forms a receiving cavity for receiving the inserted electrode.
本申请的另一个实施例提供一种绑定背板，包括：绑定基板；接收电极，电连接所述微型电子器件，所述接收电极具有导电基底和设置在所述导电基底上的容置固定结构，所述容置固定结构可被一微型电子器件上的***电极***并固定所述***电极；以使所述微型电子器件可绑定于所述绑定基板上。Another embodiment of the present application provides a binding backplane, including: a binding substrate; a receiving electrode electrically connected to the microelectronic device, the receiving electrode having a conductive base and a housing disposed on the conductive base A fixing structure, the accommodating and fixing structure can be inserted into an insertion electrode on a microelectronic device and fix the insertion electrode; so that the microelectronic device can be bound to the binding substrate.
在一个实施例中，所述容置固定结构包括导电侧壁、柔性结构和导电薄片；所述导电侧壁在所述导电基底上围合形成填充腔，且与所述导电基底电连接；所述柔性结构填充于所述填充腔中；所述导电薄片覆盖在所述容置固定结构远离所述导电基底的一侧，所述导电薄片与所述导电侧壁电连接。In one embodiment, the accommodating and fixed structure includes conductive side walls, a flexible structure and a conductive sheet; the conductive side walls enclose a filling cavity on the conductive base and are electrically connected to the conductive base; The flexible structure is filled in the filling cavity; the conductive sheet covers the side of the accommodating and fixed structure away from the conductive base, and the conductive sheet is electrically connected to the conductive side wall.
在一个实施例中，所述接收电极还包括：多个纳米柱，设置在所述导电基底远离所述微型电子器件的一侧；所述多个纳米柱相互间隔设置的多个纳米柱，所述多个纳米柱之间的间隙形成所述容纳所述***电极的容置空腔。In one embodiment, the receiving electrode further includes: a plurality of nano-columns disposed on a side of the conductive substrate away from the microelectronic device; the plurality of nano-columns are spaced apart from each other. Gaps between the plurality of nanopillars form the accommodation cavity for accommodating the inserted electrode.
本申请上述实施例至少具有如下一个或多个有益效果：通过在微型电子器件或者绑定基板上设置具有容置固定结构的接收电极，可实现接收电极和***电接的相互嵌合，并使得微型电子器件和绑定基板在不加热焊接的情况下绑定，可在修复之后再进行整面的加热焊接或者无线加热焊接，可以降低修复过程中对周边器件的不利影响。The above-mentioned embodiments of the present application at least have one or more of the following beneficial effects: by arranging receiving electrodes with accommodating and fixing structures on microelectronic devices or binding substrates, the receiving electrodes and the insertion electrical contacts can be fitted into each other, and the The microelectronic devices and the binding substrate are bound without heating and welding. After repair, the entire surface can be heated and welded or wirelessly heated and welded, which can reduce the adverse impact on peripheral devices during the repair process.
通过以下参考附图的详细说明，本申请的其它方面和特征变得明显。但是应当知道，该附图仅仅为解释的目的设计，而不是作为本申请的范围的限定。还应当知道，除非另外指出，不必要依比例绘制附图，它们仅仅力图概念地说明此处描述的结构和流程。Other aspects and features of the present application will become apparent from the following detailed description with reference to the accompanying drawings. It is to be understood, however, that the drawings are designed for the purpose of illustration only and not as a definition of the scope of the application. It should also be understood that, unless otherwise indicated, the drawings are not necessarily drawn to scale and are merely intended to conceptually illustrate the structures and processes described herein.
有益效果beneficial effects
本申请上述实施例至少具有如下一个或多个有益效果：通过在微型电子器件或者绑定基板上设置具有容置固定结构的接收电极，可实现接收电极和***电接的相互嵌合，并使得微型电子器件和绑定基板在不加热焊接的情况下绑定，可在修复之后再进行整面的加热焊接或者无线加热焊接，可以降低修复过程中对周边器件的不利影响。The above-mentioned embodiments of the present application at least have one or more of the following beneficial effects: by arranging receiving electrodes with accommodating and fixing structures on microelectronic devices or binding substrates, the receiving electrodes and the insertion electrical contacts can be fitted into each other, and the The microelectronic devices and the binding substrate are bound without heating and welding. After repair, the entire surface can be heated and welded or wirelessly heated and welded, which can reduce the adverse impact on peripheral devices during the repair process.
附图说明Description of drawings
下面将结合附图，对本申请的具体实施方式进行详细的说明。Specific embodiments of the present application will be described in detail below with reference to the accompanying drawings.
图1为本申请第一实施例提供的绑定组件的结构示意图。Figure 1 is a schematic structural diagram of a binding component provided by the first embodiment of the present application.
图2为图1所示的绑定组件的一个具体实施例的结构示意图。FIG. 2 is a schematic structural diagram of a specific embodiment of the binding component shown in FIG. 1 .
图3为图2所示的绑定组件的另一个具体实施例的结构示意图。FIG. 3 is a schematic structural diagram of another specific embodiment of the binding component shown in FIG. 2 .
图4为图2所示的绑定组件的修复方法的流程示意图。FIG. 4 is a schematic flowchart of the repair method of the binding component shown in FIG. 2 .
图5为本申请第二实施例提供的绑定组件的结构示意图。Figure 5 is a schematic structural diagram of a binding component provided by the second embodiment of the present application.
图6为图5所示的绑定组件的一个具体实施例的结构示意图。FIG. 6 is a schematic structural diagram of a specific embodiment of the binding component shown in FIG. 5 .
图7为图6所示的绑定组件的修复方法的流程示意图。FIG. 7 is a schematic flowchart of the repair method of the binding component shown in FIG. 6 .
图8为本申请第三实施例提供的微型电子部件的结构示意图。FIG. 8 is a schematic structural diagram of a microelectronic component provided by the third embodiment of the present application.
图9为本申请第四实施例提供的微型电子部件的结构示意图。Figure 9 is a schematic structural diagram of a micro electronic component provided by the fourth embodiment of the present application.
图10为本申请第五实施例提供的绑定背板的结构示意图。Figure 10 is a schematic structural diagram of a binding backplane provided by the fifth embodiment of the present application.
图11为本申请第六实施例提供的绑定背板的结构示意图。Figure 11 is a schematic structural diagram of a binding backplane provided by the sixth embodiment of the present application.
【附图标记说明】10：绑定组件；11：微型电子器件；12：绑定基板；13：第一嵌合电极；14：第二嵌合电极；15：接收电极；151：导电基底；152：容置固定结构；1521：导电侧壁；1522：柔性结构；1523：导电薄片；1524：纳米柱；1525；容置空腔；1526：填充腔；16：***电极；161：焊料层；162：导电尖刺；20：微型电子部件；30：绑定背板。[Explanation of reference numbers] 10: binding component; 11: microelectronic device; 12: binding substrate; 13: first chimeric electrode; 14: second chimeric electrode; 15: receiving electrode; 151: conductive substrate; 152: Accommodating fixed structure; 1521: Conductive side wall; 1522: Flexible structure; 1523: Conductive sheet; 1524: Nano-column; 1525: Accommodating cavity; 1526: Filling cavity; 16: Inserted electrode; 161: Solder layer; 162: Conductive spikes; 20: Micro electronic components; 30: Binding backplane.
本发明的最佳实施方式Best Mode of Carrying Out the Invention
在此处键入本发明的最佳实施方式描述段落。Type here the paragraph describing the best mode for carrying out the invention.
本发明的实施方式Embodiments of the invention
为使本申请的上述目的、特征和优点能够更加明显易懂，下面结合附图对本申请的具体实施方式做详细的说明。In order to make the above objects, features and advantages of the present application more obvious and easy to understand, the specific implementation modes of the present application will be described in detail below with reference to the accompanying drawings.
为了使本领域普通技术人员更好地理解本申请的技术方案，下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分的实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都应当属于本申请保护的范围。In order to enable those of ordinary skill in the art to better understand the technical solutions of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described implementation The examples are only part of the embodiments of this application, rather than all the embodiments. Based on the embodiments in this application, all other embodiments obtained by those of ordinary skill in the art without creative efforts should fall within the scope of protection of this application.
需要说明的是，本申请的说明书和权利要求书及上述附图中的术语“第一”、“第二”等是用于区别类似的对象，而不必用于描述特定的顺序或先后次序。应当理解这样使用的术语在适当情况下可以互换，以便这里描述的本申请实施例能够以除了在这里图示或描述的那些以外的顺序实施。此外，术语“包括”和“具有”以及他们的任何变形，意图在于覆盖不排他的包含，例如，包含了一系列步骤或单元的过程、方法、***、产品或设备不必限于清楚地列出的那些步骤或单元，而是可包括没有清楚地列出的或对于这些过程、方法、产品或设备固有的其他步骤或单元。It should be noted that the terms "first", "second", etc. in the description and claims of this application and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It is to be understood that the terms so used are interchangeable under appropriate circumstances so that the embodiments of the application described herein can be practiced in sequences other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, e.g., a process, method, system, product, or apparatus that encompasses a series of steps or units and need not be limited to those explicitly listed. Those steps or units may instead include other steps or units not expressly listed or inherent to the processes, methods, products or devices.
还需要说明的是，本申请中多个实施例的划分仅是为了描述的方便，不应构成特别的限定，各种实施例中的特征在不矛盾的情况下可以相结合，相互引用。It should also be noted that the division of multiple embodiments in this application is only for the convenience of description and should not constitute a special limitation. Features in various embodiments can be combined and referenced to each other if there is no contradiction.
在相关技术中Micro LED的绑定主要有两种，一种是在驱动电路板上设置粘胶层，将Micro LED转移至粘胶层上并通过加热粘胶层使得胶材粘附Micro LED并实现Micro LED与驱动电路板的绑定连接。另一种是在驱动电路板上设置焊接电极，通过加热焊接的方式使得Micro LED的电极与电路板上的电极焊接在一起。这两种绑定方法在Micro LED的绑定修复过程中都存在一些缺陷。例如采用粘胶的方法中，由于粘胶层在第一次转移后粘性失效，因此在往备用电极位置转移新的芯片之前需要将备用电极上失效的粘胶层清除，并补充新的粘胶材料，由于Micro LED的尺寸在微米级，进行单点胶材的清除和补充都是难度较大的。而对于加热焊接的方案，在第一次转移时需要对整个面板进行加热焊接，在修复时如需将新的芯片绑定则需要对修复点位进行第二次加热，加热焊接时的热效应可能会影响到旁边的点位，使其焊点在此熔化，影响焊接质量。为此本申请实施例提供一种新的绑定方案以解决上述至少部分缺陷。In related technologies, there are mainly two types of binding of Micro LED. One is to set an adhesive layer on the driver circuit board and attach the Micro LED to the driver circuit board. The LED is transferred to the adhesive layer and the adhesive layer is heated to make the adhesive material adhere to the Micro LED and realize the bonding connection between the Micro LED and the driver circuit board. The other is to set welding electrodes on the drive circuit board and heat the welding to make the Micro The electrodes of the LED are soldered to the electrodes on the circuit board. Both binding methods have some flaws in the binding repair process of Micro LED. For example, in the adhesive method, since the adhesive layer loses its viscosity after the first transfer, it is necessary to remove the failed adhesive layer on the spare electrode and replenish it with new adhesive before transferring a new chip to the spare electrode position. Materials, due to Micro The size of LEDs is in the micron range, so it is difficult to remove and replenish single-point adhesive materials. For the heating and welding solution, the entire panel needs to be heated and welded during the first transfer. If a new chip needs to be bound during repair, the repair point needs to be heated for a second time. The thermal effect during heating and welding may cause It will affect the nearby points, causing the solder joints to melt here, affecting the welding quality. To this end, embodiments of the present application provide a new binding solution to solve at least part of the above defects.
【第一实施例】如图1所示，本申请第一实施例提供一种绑定组件10，其包括微型电子器件11、绑定基板12，以及设置在微型电子器件11的一侧且电连接微型电子器件11的第一嵌合电极13，设置在绑定基板12一侧且电连接绑定基板12的第二嵌合电极14。其中，第一嵌合电极13和第二嵌合电极14可相互嵌合以使得微型电子器件11可绑定于绑定基板12。第一嵌合电极13和第二嵌合电极14中的至少一者作为接收电极15，另一者作为***电极16。接收电极15包括导电基底151和设置在导电基底151上的容置固定结构152，容置固定结构152可被***电极16***并固定***电极16。其中，微型电子器件11例如为微型发光器件，具体的例如为Micro LED芯片，如图1中示出的为倒装型Micro LED芯片，其具有P型半导体层和N型半导体层，P型半导体层和N型半导体层上各设置一个第一嵌合电极13。对应的绑定基板12例如为Micro LED驱动电路板，绑定基板12上对应一个Micro LED芯片位置设置有两个第二嵌合电极14。绑定基板12上设置有可以绑定多个Micro LED芯片的多个第二嵌合电极14。当然，图1中仅示出了微型电子器件11为倒装型Micro LED芯片的结构，微型电子器件11例如还可以为垂直型Micro LED芯片，则例如在垂直型Micro LED芯片的P型半导体层上设置第一嵌合电极13，绑定基板12上对应一个Micro LED绑定位置设置一个第二嵌合电极14。参照图2所示的，例如绑定基板12上的第二嵌合电极14作为接收电极15，微型电子器件11上的第一嵌合电极13作为***电极16。反之，在一些实施例中，参照图3所示的微型电子器件11上的第一嵌合电极13作为接收电极15绑定基板12上的第二嵌合电极14作为***电极16也可。或者第一嵌合电极13和第二嵌合电极14互相***，可以理解为二者皆作为接收电极15，也可以理解为第一嵌合电极13和第二嵌合电极14各自具有导电基底151和设置在导电基底151上的容置固定结构152，第一嵌合电极13上容置固定结构152可被第二嵌合电极14***并固定第二嵌合电极14，第二嵌合电极14上的容置固定结构152可被第一嵌合电极13***并固定第一嵌合电极13。其中容置固定结构152包括容置空腔1525或者柔性结构1522。例如参照图2和图3，容置固定结构152包括导电侧壁1521、柔性结构1522和导电薄片1523。第一导电侧壁1521在第一导电基底151上围合形成填充腔1526，且与导电基底151电连接。柔性结构1522填充于填充腔1526中。导电薄片1523覆盖在容置固定结构152远离导电基底151的一侧，导电薄片1523与导电侧壁1521电连接。其中导电基底151、导电侧壁1521和导电薄片1523均为金属材料，导电基底151的材料例如可以为传统驱动绑定背板所用的焊盘材料，例如铜、镍、金、银等金属中的一种或者组合，厚度范围约1~2微米。导电基底151、导电侧壁1521和导电薄片1523三者可以为相同的金属材料也可以为不同的金属材料，为同种金属材料时三者热膨胀系数一致，绑定效果更佳。柔性结构1522例如可以为硅胶、树脂或者光刻胶等软性材料，柔性结构1522的硬度例如为40~80HA（邵氏A硬度）。导电侧壁1521和柔性结构1522的厚度约为1~2微米，导电薄片1523的厚度小于1微米，例如在300~500纳米之间，较薄的厚度使得其容易被***电极16***并电连接。在一个实施例中***电极16例如可以包括焊料层161和设置在焊料层161一侧的导电尖刺162，导电尖刺162可贯穿导电薄片1523并刺入柔性结构1522中，以通过导电薄片1523使***电极16与接收电极15电连接。导电尖刺162的直径小于1微米，例如500纳米~1微米之间，高度例如为1~2微米之间，使得导电尖刺162能更好的刺穿导电薄片1523。焊料层161可以采用常规的焊料金属例如锡、镍、铜、铟、铋或者其合金等。例如图2所示的第一嵌合电极13作为***电极16时（即以设置在微型电子器件11上的为***电极16），焊料层161例如设置在Micro LED的 P电极和N电极上。反之例如图3所示的以第二嵌合电极14作为***电极16时（即以设置在绑定基板12上的为***电极16），焊料层161例如设置在绑定基板12的焊盘层上。[First Embodiment] As shown in Figure 1, the first embodiment of the present application provides a binding assembly 10, which includes a microelectronic device 11, a binding substrate 12, and an electrical circuit disposed on one side of the microelectronic device 11. The first fitting electrode 13 connected to the microelectronic device 11 is provided on one side of the binding substrate 12 and is electrically connected to the second fitting electrode 14 of the binding substrate 12 . Wherein, the first fitting electrode 13 and the second fitting electrode 14 can be fitted with each other so that the microelectronic device 11 can be bound to the binding substrate 12 . At least one of the first fitting electrode 13 and the second fitting electrode 14 serves as the receiving electrode 15 , and the other serves as the insertion electrode 16 . The receiving electrode 15 includes a conductive base 151 and an accommodating and fixing structure 152 provided on the conductive base 151. The accommodating and fixing structure 152 can be inserted by the insertion electrode 16 and fix the insertion electrode 16. Among them, the microelectronic device 11 is, for example, a microlight-emitting device, specifically a Micro LED chip. As shown in FIG. 1, it is a flip-chip Micro LED chip, which has a P-type semiconductor layer and an N-type semiconductor layer. The P-type semiconductor A first fitting electrode 13 is provided on each of the N-type semiconductor layer and the N-type semiconductor layer. The corresponding binding substrate 12 is, for example, a Micro LED drive circuit board, and two second fitting electrodes 14 are provided on the binding substrate 12 corresponding to one Micro LED chip. A plurality of second fitting electrodes 14 that can bind a plurality of Micro LED chips are provided on the binding substrate 12 . Of course, FIG. 1 only shows that the microelectronic device 11 is a flip-chip Micro LED chip. The microelectronic device 11 can also be a vertical Micro LED chip, for example, in the P-type semiconductor layer of the vertical Micro LED chip. A first fitting electrode 13 is arranged on the binding substrate 12, and a second fitting electrode 14 is arranged on the binding substrate 12 corresponding to a Micro LED binding position. Referring to FIG. 2 , for example, the second fitting electrode 14 on the binding substrate 12 serves as the receiving electrode 15 , and the first fitting electrode 13 on the microelectronic device 11 serves as the insertion electrode 16 . On the contrary, in some embodiments, the first fitting electrode 13 on the microelectronic device 11 shown in FIG. 3 may be used as the receiving electrode 15 and the second fitting electrode 14 on the bonded substrate 12 may be used as the insertion electrode 16. Or the first fitting electrode 13 and the second fitting electrode 14 are inserted into each other, which can be understood as both serving as the receiving electrode 15 , or it can also be understood that the first fitting electrode 13 and the second fitting electrode 14 each have a conductive base 151 and a receiving and fixing structure 152 provided on the conductive base 151. The receiving and fixing structure 152 on the first fitting electrode 13 can be inserted into and fixed by the second fitting electrode 14. The second fitting electrode 14 The accommodating and fixing structure 152 on the first fitting electrode 13 can be inserted into and fix the first fitting electrode 13 . The accommodating fixed structure 152 includes an accommodating cavity 1525 or a flexible structure 1522 . For example, referring to FIGS. 2 and 3 , the accommodating and fixing structure 152 includes a conductive side wall 1521 , a flexible structure 1522 and a conductive sheet 1523 . The first conductive sidewall 1521 encloses a filling cavity 1526 on the first conductive base 151 and is electrically connected to the conductive base 151 . Flexible structure 1522 fills filling cavity 1526. The conductive sheet 1523 covers the side of the accommodating fixed structure 152 away from the conductive base 151 , and the conductive sheet 1523 is electrically connected to the conductive side wall 1521 . The conductive base 151, the conductive sidewalls 1521 and the conductive sheet 1523 are all made of metal materials. The material of the conductive base 151 can be, for example, the pad material used in traditional drive bonding backplanes, such as copper, nickel, gold, silver and other metals. One type or combination, with a thickness ranging from about 1 to 2 microns. The conductive base 151 , the conductive sidewall 1521 and the conductive sheet 1523 can be made of the same metal material or different metal materials. When they are made of the same metal material, their thermal expansion coefficients are consistent and the binding effect is better. The flexible structure 1522 may be, for example, a soft material such as silicone, resin, or photoresist. The hardness of the flexible structure 1522 may be, for example, 40 to 80 HA (Shore A hardness). The thickness of the conductive sidewall 1521 and the flexible structure 1522 is about 1 to 2 microns, and the thickness of the conductive sheet 1523 is less than 1 micron, for example, between 300 and 500 nanometers. The thinner thickness makes it easy to be inserted and electrically connected by the insertion electrode 16 . In one embodiment, the insertion electrode 16 may include, for example, a solder layer 161 and a conductive spike 162 disposed on one side of the solder layer 161 . The conductive spike 162 may penetrate the conductive sheet 1523 and penetrate into the flexible structure 1522 to pass through the conductive sheet 1523 The insertion electrode 16 and the receiving electrode 15 are electrically connected. The diameter of the conductive spikes 162 is less than 1 micron, for example, between 500 nanometers and 1 micron, and the height is, for example, between 1 and 2 microns, so that the conductive spikes 162 can better penetrate the conductive sheet 1523 . The solder layer 161 may use conventional solder metals such as tin, nickel, copper, indium, bismuth or alloys thereof. For example, when the first fitting electrode 13 shown in FIG. 2 is used as the insertion electrode 16 (that is, the one provided on the microelectronic device 11 is the insertion electrode 16), the solder layer 161 is provided on the P electrode and N electrode of the Micro LED, for example. On the contrary, when the second fitting electrode 14 is used as the insertion electrode 16 as shown in FIG. 3 (that is, the insertion electrode 16 is provided on the binding substrate 12), the solder layer 161 is provided on the pad layer of the binding substrate 12, for example. superior.
其中，本实施例提供的接收电极15的制备工艺例如可以包括如下步骤：提供绑定基板12（或者微型电子器件11），绑定基板12上除常规电极位置以外，预留至少一个以上的备用电极位置；对应每个电极位置形成导电基底；在导电基底远离绑定基板12（或者微型电子器件11）的一侧形成导电侧壁，在每个导电基底上围合形成一个填充腔；例如采用旋涂等方式在绑定基板12（或者微型电子器件11）的邻近导电基底的一侧涂布柔性材料层（例如硅胶层）；刻蚀柔性材料层中不需要的部分（即除各填充腔以外的部分）；在柔性材料层远离绑定基板12的一侧形成导电薄片。其中导电基底、导电侧壁和导电薄片的形成工艺例如可以采用蒸镀工艺，可以通过掩膜工艺仅在需要生长的位置生长。去除多余的柔性材料的步骤也可以在形成导电薄片之后执行。Among them, the preparation process of the receiving electrode 15 provided in this embodiment may include, for example, the following steps: providing a binding substrate 12 (or a microelectronic device 11), and reserving at least one spare electrode position on the binding substrate 12 in addition to the conventional electrode positions. Electrode positions; forming a conductive substrate corresponding to each electrode position; forming a conductive side wall on the side of the conductive substrate away from the binding substrate 12 (or the microelectronic device 11), and enclosing a filling cavity on each conductive substrate; for example, using Coat a flexible material layer (such as a silicone layer) on the side of the binding substrate 12 (or the microelectronic device 11) adjacent to the conductive substrate by spin coating or other methods; etching unnecessary parts of the flexible material layer (ie, except for each filled cavity) other parts); a conductive sheet is formed on the side of the flexible material layer away from the binding substrate 12 . The formation process of the conductive base, conductive sidewalls and conductive sheets can be, for example, an evaporation process, and can be grown only at the locations where growth is required through a mask process. The step of removing excess flexible material may also be performed after forming the conductive sheet.
参照图4，其为图2所示的绑定组件10的修复方法的流程示意图。图中仅示出绑定基板12上的两组第二嵌合电极14，其中一组为备用电极，但本实施例并不限制于此。在图4的步骤（a）中，分别提供绑定组件10中的微型电子器件11和绑定基板12，微型电子器件11上设置的第一嵌合电极13作为***电极16，绑定基板12上的第二嵌合电极14作为接收电极15。向绑定基板12左边的一组电极上绑定微型电子器件11，通过下压微型电子器件11使得***电极16上的导电尖刺162刺穿接收电极15上的导电薄片1523并刺入柔性结构1522中，得到图4中步骤（b）所示的第一次绑定后的结构，此时***电极16上的导电尖刺162被导电薄片1523和柔性结构1522卡住固定，导电尖刺162和焊盘层161与导电薄片1523接触实现电连接。第一次转移完成后对绑定基板12通电，驱动微型电子器件11，若微型电子器件11发光则绑定正常。若微型电子器件11不发光则绑定异常，需要进行修复。在步骤（c）中移除第一次绑定异常的微型电子器件11。在图4的步骤（c）之前，右边的一组接收电极15（也即备用电极）未进行绑定工艺，在步骤（d）中可以向该组备用电极位置转移新的微型电子器件11。使得新的微型电子器件11的***电极16上的导电尖刺162刺穿接收电极15上的导电薄片1523并刺入柔性结构1522中，得到图4中步骤（d）所示的修复后的结构，此时***电极16上的导电尖刺162被导电薄片1523和柔性结构1522卡住固定，导电尖刺162和焊盘层161与导电薄片1523接触实现电连接。可再次检验备用电极的绑定是否正常，若绑定异常则可继续进行上述修复步骤，若绑定正常，则可以对绑定基板12上进行整体加热使焊盘层161熔化实现整个面板上全部微型电子器件11和绑定基板12的焊接。如此在整个转移修复过程中可以只在最后一次转移后进行加热焊接，无需进行前述相关技术的单点加热焊接，不会影响到周边的焊点质量。并且修复过程中只需清除坏点位置的Micro LED，无需进行前述相关技术中的清除胶层，补充胶材的工艺，修复过程更加简单可行。Refer to FIG. 4 , which is a schematic flowchart of the repair method of the binding component 10 shown in FIG. 2 . The figure only shows two sets of second fitting electrodes 14 on the binding substrate 12, one of which is a backup electrode, but this embodiment is not limited thereto. In step (a) of FIG. 4 , the microelectronic device 11 and the binding substrate 12 in the binding assembly 10 are respectively provided. The first fitting electrode 13 provided on the microelectronic device 11 serves as the insertion electrode 16 , and the binding substrate 12 The second fitting electrode 14 serves as the receiving electrode 15 . Bind the microelectronic device 11 to a set of electrodes on the left side of the binding substrate 12. By pressing down on the microelectronic device 11, the conductive spikes 162 on the inserted electrodes 16 penetrate the conductive thin sheets 1523 on the receiving electrode 15 and penetrate into the flexible structure. In 1522, the structure after the first binding shown in step (b) in Figure 4 is obtained. At this time, the conductive spike 162 inserted into the electrode 16 is stuck and fixed by the conductive sheet 1523 and the flexible structure 1522. The conductive spike 162 The pad layer 161 is in contact with the conductive sheet 1523 to achieve electrical connection. After the first transfer is completed, the binding substrate 12 is powered on to drive the microelectronic device 11. If the microelectronic device 11 emits light, the binding is normal. If the microelectronic device 11 does not emit light, the binding is abnormal and needs to be repaired. The first abnormally bound microelectronic device 11 is removed in step (c). Before step (c) in FIG. 4 , the right group of receiving electrodes 15 (that is, the backup electrodes) has not undergone a bonding process. In step (d), a new microelectronic device 11 can be transferred to the position of the group of backup electrodes. The conductive spikes 162 on the insertion electrode 16 of the new microelectronic device 11 are caused to pierce the conductive sheet 1523 on the receiving electrode 15 and penetrate into the flexible structure 1522 to obtain the repaired structure shown in step (d) in Figure 4 At this time, the conductive spike 162 inserted into the electrode 16 is caught and fixed by the conductive sheet 1523 and the flexible structure 1522. The conductive spike 162 and the pad layer 161 contact the conductive sheet 1523 to achieve electrical connection. You can check again whether the binding of the backup electrode is normal. If the binding is abnormal, you can continue to perform the above repair steps. If the binding is normal, you can heat the binding substrate 12 as a whole to melt the pad layer 161 to achieve the entire panel. Welding of the microelectronic device 11 and the bonding substrate 12 . In this way, during the entire transfer repair process, heating and welding can be performed only after the last transfer, without the need for single-point heating and welding of the aforementioned related technologies, which will not affect the quality of the surrounding solder joints. And during the repair process, you only need to clear the Micro With LED, there is no need to carry out the process of removing the adhesive layer and replenishing the adhesive material in the aforementioned related technologies, making the repair process simpler and more feasible.
【第二实施例】参照图5，本申请第二实施例提供另一种绑定组件10，其包括微型电子器件11、绑定基板12，以及设置在微型电子器件11的一侧且电连接微型电子器件11的第一嵌合电极13，设置在绑定基板12一侧且电连接绑定基板12的第二嵌合电极14。其中，第一嵌合电极13和第二嵌合电极14可相互嵌合以使得微型电子器件11可绑定于绑定基板12。第一嵌合电极13和第二嵌合电极14中的至少一者作为接收电极15，另一者作为***电极16。接收电极15包括导电基底151和设置在导电基底151上的容置固定结构152，容置固定结构152可被***电极16***并固定***电极16。其中，微型电子器件11例如为微型发光器件，具体的例如为Micro LED芯片，如图5中示出的为倒装型Micro LED芯片，其具有P型半导体层和N型半导体层，P型半导体层和N型半导体层上各设置一个第一嵌合电极13。对应的绑定基板12例如为Micro LED驱动电路板，绑定基板12上对应一个Micro LED芯片位置设置有两个第二嵌合电极14。绑定基板12上设置有可以绑定多个Micro LED芯片的多个第二嵌合电极14。当然，图5中仅示出了微型电子器件11为倒装型Micro LED芯片的结构，微型电子器件11例如还可以为垂直型Micro LED芯片，则例如在垂直型Micro LED芯片的P型半导体上设置第一嵌合电极13，绑定基板12上对应一个Micro LED绑定位置设置一个第二嵌合电极14。其中，例如绑定基板12上的第二嵌合电极14作为接收电极15，微型电子器件11上的第一嵌合电极13作为***电极16。反之，在一些实施例中微型电子器件11上的第一嵌合电极13作为接收电极15绑定基板12上的第二嵌合电极14作为***电极16也可。或者如图6所示的绑定组件10的结构，第一嵌合电极13和第二嵌合电极14可互相***，可以理解为二者皆作为接收电极15，也可以理解为第一嵌合电极13和第二嵌合电极14各自具有导电基底151和设置在导电基底151上的容置固定结构152，第一嵌合电极13上容置固定结构152可被第二嵌合电极14***并固定第二嵌合电极14，第二嵌合电极14上的容置固定结构152可被第一嵌合电极13***并固定第一嵌合电极13。其中容置固定结构152包括容置空腔1525或者柔性结构1522。[Second Embodiment] Referring to Figure 5, a second embodiment of the present application provides another binding component 10, which includes a microelectronic device 11, a binding substrate 12, and is disposed on one side of the microelectronic device 11 and electrically connected The first fitting electrode 13 of the microelectronic device 11 is disposed on one side of the binding substrate 12 and is electrically connected to the second fitting electrode 14 of the binding substrate 12 . Wherein, the first fitting electrode 13 and the second fitting electrode 14 can be fitted with each other so that the microelectronic device 11 can be bound to the binding substrate 12 . At least one of the first fitting electrode 13 and the second fitting electrode 14 serves as the receiving electrode 15 , and the other serves as the insertion electrode 16 . The receiving electrode 15 includes a conductive base 151 and an accommodating and fixing structure 152 provided on the conductive base 151. The accommodating and fixing structure 152 can be inserted by the insertion electrode 16 and fix the insertion electrode 16. The microelectronic device 11 is, for example, a microlight-emitting device, specifically a Micro LED chip. As shown in FIG. 5 , it is a flip-chip Micro LED chip, which has a P-type semiconductor layer and an N-type semiconductor layer. The P-type semiconductor layer A first fitting electrode 13 is provided on each of the N-type semiconductor layer and the N-type semiconductor layer. The corresponding binding substrate 12 is, for example, a Micro LED drive circuit board, and two second fitting electrodes 14 are provided on the binding substrate 12 corresponding to one Micro LED chip. A plurality of second fitting electrodes 14 that can bind a plurality of Micro LED chips are provided on the binding substrate 12 . Of course, FIG. 5 only shows that the microelectronic device 11 is a flip-chip Micro LED chip. The microelectronic device 11 can also be a vertical Micro LED chip, for example, on the P-type semiconductor of the vertical Micro LED chip. A first fitting electrode 13 is provided, and a second fitting electrode 14 is provided on the binding substrate 12 corresponding to a Micro LED binding position. Among them, for example, the second fitting electrode 14 on the binding substrate 12 serves as the receiving electrode 15, and the first fitting electrode 13 on the microelectronic device 11 serves as the insertion electrode 16. On the contrary, in some embodiments, the first embedded electrode 13 on the microelectronic device 11 may serve as the receiving electrode 15 and the second embedded electrode 14 on the binding substrate 12 may serve as the insertion electrode 16 . Or in the structure of the binding component 10 as shown in Figure 6, the first fitting electrode 13 and the second fitting electrode 14 can be inserted into each other, which can be understood as both receiving electrodes 15, or as the first fitting electrode. The electrode 13 and the second embedded electrode 14 each have a conductive base 151 and a receiving and fixing structure 152 provided on the conductive base 151. The receiving and fixing structure 152 on the first embedded electrode 13 can be inserted into the second embedded electrode 14 and The second fitting electrode 14 is fixed, and the accommodation and fixing structure 152 on the second fitting electrode 14 can be inserted into and fixed by the first fitting electrode 13 . The accommodating fixed structure 152 includes an accommodating cavity 1525 or a flexible structure 1522 .
本实施例中，容置固定结构152例如包括多个纳米柱1524，多个纳米柱1524相互间隔设置，多个纳米柱1524之间的间隙形成容置***电极16的容置空腔1525。其中多个纳米柱1524中，每个纳米柱1524的高度例如为2~3微米，（接收电极15的整体厚度3~4微米），每个纳米柱1524的宽度（或者直径）例如为200~500纳米之间，相邻两个纳米柱1524之间的间隙与每个纳米柱1524的宽度基本相等，即相邻两个纳米柱1524之间的间隙约为200~500纳米。在一些实施例中第一嵌合电极13和第二嵌合电极14的结构相同，则第一嵌合电极13中相邻两个纳米柱之间的间隙距离与第二嵌合电极14上每个纳米柱1524的宽度相等。第二嵌合电极14中相邻两个纳米柱之间的间隙距离与第一嵌合电极13上每个纳米柱1524的宽度相等。使得第一嵌合电极13和第二嵌合电极14各自的多个纳米柱1524可相互接触固定。具体的多个纳米柱1524例如为金属材质，具体的例如可以为铜、镍金属等，金属材质具有较佳的延展性，使得第一嵌合电极13和第二嵌合电极14相互穿插的过程中可发生轻微形变以更好的结合而不易损坏。更具体地第一嵌合电极13和第二嵌合电极14上的多个纳米柱1524例如采用同种金属。或者第一嵌合电极13和第二嵌合电极14中一者的纳米主1524采用可焊接的材料例如锡、镍、铜、铟、铋或者其合金等，另一者的纳米柱1524采用铜、镍等可以与焊接材料互熔的金属，可以实现第一嵌合电极13和第二嵌合电极14的加热焊接。In this embodiment, the accommodating and fixed structure 152 includes, for example, a plurality of nano-columns 1524. The plurality of nano-columns 1524 are spaced apart from each other. The gaps between the plurality of nano-columns 1524 form accommodating cavities 1525 for accommodating the inserted electrodes 16. Among the plurality of nano-columns 1524, the height of each nano-column 1524 is, for example, 2 to 3 microns (the overall thickness of the receiving electrode 15 is 3 to 4 microns), and the width (or diameter) of each nano column 1524 is, for example, 200 to 200 microns. Between 500 nanometers, the gap between two adjacent nano-columns 1524 is basically equal to the width of each nano-column 1524, that is, the gap between two adjacent nano-columns 1524 is approximately 200 to 500 nanometers. In some embodiments, the structures of the first chimeric electrode 13 and the second chimeric electrode 14 are the same, so the gap distance between two adjacent nanopillars in the first chimeric electrode 13 is the same as the gap distance between each nanocolumn on the second chimeric electrode 14 . Each nanopillar 1524 has the same width. The gap distance between two adjacent nano-columns in the second embedded electrode 14 is equal to the width of each nano-column 1524 on the first embedded electrode 13 . This allows the plurality of nanopillars 1524 of the first embedded electrode 13 and the second embedded electrode 14 to be in contact with each other and fixed. Specifically, the plurality of nano-columns 1524 are made of metal material, such as copper, nickel metal, etc. The metal material has better ductility, so that the first fitting electrode 13 and the second fitting electrode 14 interpenetrate each other. Slight deformation can occur for better bonding and not easy to damage. More specifically, the plurality of nanopillars 1524 on the first embedded electrode 13 and the second embedded electrode 14 are made of the same metal, for example. Alternatively, the nano-rods 1524 of one of the first embedded electrode 13 and the second embedded electrode 14 may be made of weldable materials such as tin, nickel, copper, indium, bismuth or alloys thereof, and the nano-pillars 1524 of the other may be made of copper. , nickel and other metals that can be mutually melted with the welding material, the first fitting electrode 13 and the second fitting electrode 14 can be heated and welded.
其中，本实施例提供的接收电极15的制备工艺例如可以包括如下步骤：提供绑定基板12（或者微型电子器件11），绑定基板12上除常规电极位置以外，预留至少一个以上的备用电极位置；对应每个电极位置形成导电基底；在导电基底远离绑定基板12（或者微型电子器件11）的一侧形成多个纳米柱；其中导电基底和多个纳米柱的形成工艺可以采用蒸镀或者化镀。或者，在一些实施例中，例如还可以在每个电极位置先用金属形成整体金属块，然后通过刻蚀等工艺在金属块上刻蚀形成多个纳米柱，以上形成工艺仅作举例说明，本实施例并不限制于此。Among them, the preparation process of the receiving electrode 15 provided in this embodiment may include, for example, the following steps: providing a binding substrate 12 (or a microelectronic device 11), and reserving at least one spare electrode position on the binding substrate 12 in addition to the conventional electrode positions. Electrode positions; a conductive substrate is formed corresponding to each electrode position; multiple nano-columns are formed on the side of the conductive substrate away from the binding substrate 12 (or the microelectronic device 11); the formation process of the conductive substrate and multiple nano-columns can be evaporation. Plating or chemical plating. Alternatively, in some embodiments, for example, metal can be used to form an integral metal block at each electrode position, and then a plurality of nanopillars can be etched on the metal block through processes such as etching. The above formation process is only for illustration. This embodiment is not limited to this.
如图7所示，其为图6所示的绑定组件10修复方法的流程示意图。图中仅示出绑定基板12上的两组第二嵌合电极14，其中一组为备用电极，但本实施例并不限制于此。在图7的步骤（a）中，分别提供绑定组件10中的微型电子器件11和绑定基板12，微型电子器件11上设置的第一嵌合电极13和绑定基板12上的第二嵌合电极14均具有容置固定结构152，即第一嵌合电极13和第二嵌合电极14互为接收电极15和***电极16。在步骤（a）中向绑定基板12左边的一组电极上绑定微型电子器件11，通过下压微型电子器件11使得第一嵌合电极13和第二嵌合电极14的多个纳米柱1524相互穿插，得到如图7步骤（b）中示出的第一次转移后的结构。此时由于多个纳米柱1524的“毛刺”形态使得第一嵌合电极13和第二嵌合电极14可以相互紧密结合并实现电连接。第一次转移完成后对绑定基板12通电，驱动微型电子器件11，若微型电子器件11发光则绑定正常。若微型电子器件11不发光则绑定异常，需要进行修复。在图7的步骤（c）中移除第一次绑定异常的微型电子器件11。在步骤（c）之前，右边的一组备用电极未进行绑定工艺，在步骤（d）中可以向该组备用电极位置转移新的微型电子器件11。使得新的微型电子器件11的第一嵌合电极13与备用电极位置上的第二嵌合电极14相互穿插，得到图7中步骤（d）所示的修复后的结构。可再次检验备用电极位置的绑定是否正常，若绑定异常可以继续进行上述修复步骤。若绑定正常，由于纳米柱1524的“毛刺”形态已经可以使得微型电子器件11与绑定基板12稳定结合，无需加热焊接即完成了绑定，可以减少加热焊接的影响。当然，有需要时，也可以选择第一嵌合电极13和第二嵌合电极14中一者的纳米柱1524为焊接材料，另一者的纳米柱1524为可与焊接材料互熔的金属材料，则可以在最后一次转移后对整个绑定基板12上的全部微型电子器件11进行整体的加热焊接。如此在整个转移修复过程中可以只在最后一次转移后进行加热焊接，无需进行前述相关技术的单点加热焊接，不会影响到周边的焊点质量。并且修复过程中只需清除坏点位置的Micro LED，无需进行前述相关技术中的清除胶层，补充胶材的工艺，修复过程更加简单可行。As shown in FIG. 7 , it is a schematic flow chart of the repair method of the binding component 10 shown in FIG. 6 . The figure only shows two sets of second fitting electrodes 14 on the binding substrate 12, one of which is a backup electrode, but this embodiment is not limited thereto. In step (a) of FIG. 7 , the microelectronic device 11 and the binding substrate 12 in the binding assembly 10 are provided respectively. The first fitting electrode 13 provided on the microelectronic device 11 and the second fitting electrode 13 on the binding substrate 12 are provided respectively. Each of the embedded electrodes 14 has a receiving and fixing structure 152 , that is, the first embedded electrode 13 and the second embedded electrode 14 serve as the receiving electrode 15 and the inserting electrode 16 for each other. In step (a), the microelectronic device 11 is bound to a set of electrodes on the left side of the binding substrate 12 . By pressing down the microelectronic device 11 , the plurality of nanopillars of the first embedded electrode 13 and the second embedded electrode 14 are formed. 1524 are interspersed with each other to obtain the structure after the first transfer as shown in step (b) of Figure 7 . At this time, due to the "burr" shape of the plurality of nano-columns 1524, the first chimeric electrode 13 and the second chimeric electrode 14 can be closely combined with each other and achieve electrical connection. After the first transfer is completed, the binding substrate 12 is powered on to drive the microelectronic device 11. If the microelectronic device 11 emits light, the binding is normal. If the microelectronic device 11 does not emit light, the binding is abnormal and needs to be repaired. The first abnormally bound microelectronic device 11 is removed in step (c) of FIG. 7 . Before step (c), the right set of backup electrodes has not undergone a bonding process. In step (d), a new microelectronic device 11 can be transferred to the position of this set of backup electrodes. The first fitting electrode 13 of the new microelectronic device 11 and the second fitting electrode 14 at the spare electrode position are interleaved with each other to obtain the repaired structure shown in step (d) in FIG. 7 . You can recheck whether the binding of the spare electrode position is normal. If the binding is abnormal, you can continue with the above repair steps. If the binding is normal, the "burr" shape of the nanocolumn 1524 can already make the microelectronic device 11 and the binding substrate 12 stably combined, and the binding is completed without heating and welding, which can reduce the influence of heating and welding. Of course, when necessary, the nano-columns 1524 of one of the first fitting electrode 13 and the second fitting electrode 14 can be selected as the welding material, and the nano-columns 1524 of the other one can be made of a metal material that can be interfused with the welding material. , then all the microelectronic devices 11 on the entire binding substrate 12 can be integrally heated and welded after the last transfer. In this way, during the entire transfer repair process, heating and welding can only be performed after the last transfer, without the need for single-point heating and welding of the aforementioned related technologies, which will not affect the quality of the surrounding solder joints. And during the repair process, you only need to clear the Micro With LED, there is no need to carry out the process of removing the adhesive layer and replenishing the adhesive material in the aforementioned related technologies, making the repair process simpler and more feasible.
【第三实施例】如图8所示，本申请第三实施例提供一种微型电子部件20，其包括微型电子器件11和接收电极15。接收电极15电连接微型电子器件11。接收电极15具有导电基底151和设置在导电基底151上的容置固定结构152，容置固定结构152可被一绑定基板上的***电极***并固定***电极，以使微型电子器件11可绑定于绑定基板上。[Third Embodiment] As shown in FIG. 8 , the third embodiment of the present application provides a microelectronic component 20 , which includes a microelectronic device 11 and a receiving electrode 15 . The receiving electrode 15 is electrically connected to the microelectronic device 11 . The receiving electrode 15 has a conductive base 151 and a receiving and fixing structure 152 arranged on the conductive base 151. The receiving and fixing structure 152 can be inserted into and fixed by an insertion electrode on a binding substrate, so that the microelectronic device 11 can be bound. fixed on the binding substrate.
其中，微型电子器件11例如为微型发光器件，具体的例如为Micro LED芯片，如图8中示出的为倒装型Micro LED芯片，其具有P型半导体层和N型半导体层，P型半导体层和N型半导体层上各设置一个接收电极15。其中导电基底151例如为传统Micro LED芯片的P电极或者N电极，厚度范围约1~2微米。当然，图8中仅示出了微型电子器件11为倒装型Micro LED芯片的结构，微型电子器件11例如还可以为垂直型Micro LED芯片，则例如在垂直型Micro LED芯片的P型半导体层上设置接收电极15。其中容置固定结构152包括容置空腔1525或者柔性结构1522。例如参照图8，容置固定结构152包括导电侧壁1521、柔性结构1522和导电薄片1523。第一导电侧壁1521在第一导电基底151上围合形成填充腔1526，且与导电基底151电连接。柔性结构1522填充于填充腔1526中。导电薄片1523覆盖在容置固定结构152远离导电基底151的一侧，导电薄片1523与导电侧壁1521电连接。其中导电基底151、导电侧壁1521和导电薄片1523均为金属材料，例如铜、镍、金、银等金属中的一种或者组合。导电基底151、导电侧壁1521和导电薄片1523三者可以为相同的金属材料也可以为不同的金属材料，为同种金属材料时三者热膨胀系数一致，绑定效果更佳。柔性结构1522例如可以为硅胶、树脂或者光刻胶等软性材料，柔性结构1522的硬度例如为40~80HA（邵氏A硬度）。导电侧壁1521和柔性结构1522的厚度约为1~2微米，导电薄片1523的厚度小于1微米，例如在300~500纳米之间，较薄的厚度使得其容易被绑定基板上的***电极***并电连接。配合绑定基板上的***电极设置成尖刺形态则结合更简单。本实施例提供的微型电子部件20可实现类似前述第一实施例所述的修复方法，在整个转移修复过程中可以只在最后一次转移后进行加热焊接，无需进行前述相关技术的单点加热焊接，不会影响到周边的焊点质量。并且修复过程中只需清除坏点位置的Micro LED，无需进行前述相关技术中的清除胶层，补充胶材的工艺，修复过程更加简单可行。Wherein, the micro electronic device 11 is, for example, a micro light-emitting device, specifically, it is a Micro The LED chip shown in Figure 8 is a flip-chip Micro The LED chip has a P-type semiconductor layer and an N-type semiconductor layer, and a receiving electrode 15 is provided on each of the P-type semiconductor layer and the N-type semiconductor layer. The conductive substrate 151 is, for example, the P electrode or N electrode of a traditional Micro LED chip, with a thickness ranging from about 1 to 2 microns. Of course, FIG. 8 only shows the structure in which the microelectronic device 11 is a flip-chip Micro LED chip. The microelectronic device 11 may also be a vertical Micro LED chip, for example, in the P-type semiconductor layer of the vertical Micro LED chip. A receiving electrode 15 is provided on it. The accommodating fixed structure 152 includes an accommodating cavity 1525 or a flexible structure 1522 . For example, referring to FIG. 8 , the accommodating and fixing structure 152 includes a conductive side wall 1521 , a flexible structure 1522 and a conductive sheet 1523 . The first conductive sidewall 1521 encloses a filling cavity 1526 on the first conductive base 151 and is electrically connected to the conductive base 151 . Flexible structure 1522 fills filling cavity 1526. The conductive sheet 1523 covers the side of the accommodating fixed structure 152 away from the conductive base 151 , and the conductive sheet 1523 is electrically connected to the conductive side wall 1521 . The conductive base 151, the conductive sidewalls 1521 and the conductive sheet 1523 are all made of metal materials, such as one or a combination of copper, nickel, gold, silver and other metals. The conductive base 151 , the conductive sidewall 1521 and the conductive sheet 1523 can be made of the same metal material or different metal materials. When they are made of the same metal material, their thermal expansion coefficients are consistent and the binding effect is better. The flexible structure 1522 may be, for example, a soft material such as silicone, resin, or photoresist. The hardness of the flexible structure 1522 may be, for example, 40 to 80 HA (Shore A hardness). The thickness of the conductive sidewall 1521 and the flexible structure 1522 is about 1 to 2 microns, and the thickness of the conductive sheet 1523 is less than 1 micron, for example, between 300 and 500 nanometers. The thinner thickness makes it easy to be bound to the inserted electrode on the substrate. Plug in and connect electrically. The insertion electrode on the binding substrate is arranged in a spike shape to make the bonding easier. The microelectronic component 20 provided in this embodiment can implement a repair method similar to that described in the first embodiment. During the entire transfer repair process, heating and welding can only be performed after the last transfer, without the need for single-point heating and welding in the aforementioned related technologies. , will not affect the quality of the surrounding solder joints. And during the repair process, you only need to clear the Micro With LED, there is no need to carry out the process of removing the adhesive layer and replenishing the adhesive material in the aforementioned related technologies, making the repair process simpler and more feasible.
【第四实施例】如图9所示，本申请第四实施例提供一种微型电子部件20，其包括微型电子器件11和接收电极15。接收电极15电连接微型电子器件11。接收电极15具有导电基底151和设置在导电基底151上的容置固定结构152，容置固定结构152可被一绑定基板上的***电极***并固定***电极，以使微型电子器件11可绑定于绑定基板上。[Fourth Embodiment] As shown in FIG. 9 , the fourth embodiment of the present application provides a microelectronic component 20 , which includes a microelectronic device 11 and a receiving electrode 15 . The receiving electrode 15 is electrically connected to the microelectronic device 11 . The receiving electrode 15 has a conductive base 151 and a receiving and fixing structure 152 arranged on the conductive base 151. The receiving and fixing structure 152 can be inserted into and fixed by an insertion electrode on a binding substrate, so that the microelectronic device 11 can be bound. fixed on the binding substrate.
其中，微型电子器件11例如为微型发光器件，具体的例如为Micro LED芯片，如图9中示出的为倒装型Micro LED芯片，其具有P型半导体层和N型半导体层，P型半导体层和N型半导体层上各设置一个接收电极15。其中导电基底151例如为传统Micro LED芯片的P电极或者N电极，厚度范围约1~2微米。当然，图9中仅示出了微型电子器件11为倒装型Micro LED芯片的结构，微型电子器件11例如还可以为垂直型Micro LED芯片，则例如在垂直型Micro LED芯片的P型半导体层上设置接收电极15。Wherein, the micro electronic device 11 is, for example, a micro light-emitting device, specifically, it is a Micro The LED chip shown in Figure 9 is a flip-chip Micro The LED chip has a P-type semiconductor layer and an N-type semiconductor layer, and a receiving electrode 15 is provided on each of the P-type semiconductor layer and the N-type semiconductor layer. The conductive substrate 151 is, for example, the P electrode or N electrode of a traditional Micro LED chip, with a thickness ranging from about 1 to 2 microns. Of course, FIG. 9 only shows the structure in which the microelectronic device 11 is a flip-chip Micro LED chip. The microelectronic device 11 may also be a vertical Micro LED chip, for example, in the P-type semiconductor layer of the vertical Micro LED chip. A receiving electrode 15 is provided on it.
参照图9，本实施例中容置固定结构152例如包括多个纳米柱1524，多个纳米柱1524设置在导电基底151远离微型电子器件11的一侧。多个纳米柱1524相互间隔设置，且多个纳米柱1524之间的间隙形成容纳绑定基板上***电极的容置空腔1525。其中多个纳米柱1524中，每个纳米柱1524的高度例如为2~3微米，（接收电极15的整体厚度3~4微米），每个纳米柱1524的宽度（或者直径）例如为200~500纳米之间，相邻两个纳米柱1524之间的间隙与每个纳米柱1524的宽度基本相等，即相邻两个纳米柱1524之间的间隙约为200~500纳米。具体的多个纳米柱1524例如为金属材质，具体的例如可以为铜、镍金属等，金属材质具有较佳的延展性，绑定过程中可发生轻微形变以更好的结合而不易损坏。本实施例提供的微型电子部件20设置多个纳米柱1524的结构，可以配合将绑定基板上的***电极设置为与本实施例中接收电极15相同的结构，可通过纳米柱之间的相互穿插实现稳定绑定，实现类似前述第二实施例的修复方案。其中本实施例中容置固定结构152的多个纳米柱1524可以铜、镍等金属材料，或者是锡、镍、铜、铟、铋或者其合金等可焊接材料。配合绑定基板上***电极的设置可实现不加热的焊接绑定或者加热的焊接绑定，根据实际需求进行设置，本实施例并不限制于此。采用本实施例提供的微型电子部件20的结构，可以在整个转移修复过程中可以只在最后一次转移后进行加热焊接，或者无需焊接，无需进行前述相关技术的单点加热焊接，不会影响到周边的焊点质量。并且修复过程中只需清除坏点位置的Micro LED，无需进行前述相关技术中的清除胶层，补充胶材的工艺，修复过程更加简单可行。Referring to FIG. 9 , in this embodiment, the accommodating and fixed structure 152 includes, for example, a plurality of nanopillars 1524 , and the plurality of nanopillars 1524 are disposed on a side of the conductive substrate 151 away from the microelectronic device 11 . The plurality of nano-columns 1524 are spaced apart from each other, and the gaps between the plurality of nano-columns 1524 form accommodating cavities 1525 for accommodating electrodes inserted on the binding substrate. Among the plurality of nano-columns 1524, the height of each nano-column 1524 is, for example, 2 to 3 microns (the overall thickness of the receiving electrode 15 is 3 to 4 microns), and the width (or diameter) of each nano column 1524 is, for example, 200 to 200 microns. Between 500 nanometers, the gap between two adjacent nanocolumns 1524 is basically equal to the width of each nanocolumn 1524, that is, the gap between two adjacent nanocolumns 1524 is about 200~500 nanometers. Specifically, the plurality of nanopillars 1524 are made of metal, such as copper, nickel, etc. Metal materials have better ductility and can be slightly deformed during the binding process to achieve better bonding and are less likely to be damaged. The microelectronic component 20 provided in this embodiment is provided with a structure of multiple nanopillars 1524, which can be used to set the insertion electrode on the binding substrate to have the same structure as the receiving electrode 15 in this embodiment. Through the mutual interaction between the nanopillars, Interspersed to achieve stable binding, a repair solution similar to the aforementioned second embodiment is implemented. In this embodiment, the plurality of nano-columns 1524 accommodating the fixed structure 152 can be metal materials such as copper and nickel, or weldable materials such as tin, nickel, copper, indium, bismuth or alloys thereof. In conjunction with the arrangement of the inserted electrodes on the binding substrate, non-heated welding bonding or heated welding bonding can be implemented. The settings can be made according to actual needs, and this embodiment is not limited thereto. Using the structure of the microelectronic component 20 provided in this embodiment, heating and welding can be performed only after the last transfer during the entire transfer and repair process, or no welding is required, and there is no need to perform the single-point heating and welding of the aforementioned related technologies, which will not affect the The quality of the surrounding solder joints. And during the repair process, you only need to clear the Micro With LED, there is no need to carry out the process of removing the adhesive layer and replenishing the adhesive material in the aforementioned related technologies, making the repair process simpler and more feasible.
【第五实施例】如图10所示，本申请第五实施例提供一种绑定背板30，其包括绑定基板12和接收电极15。接收电极15电连接微型电子器件11。接收电极15具有导电基底151和设置在导电基底151上的容置固定结构152。容置固定结构152可被一微型电子器件上的***电极***并固定***电极16，以使微型电子器件可绑定于绑定基板12上。[Fifth Embodiment] As shown in Figure 10, the fifth embodiment of the present application provides a binding backplane 30, which includes a binding substrate 12 and a receiving electrode 15. The receiving electrode 15 is electrically connected to the microelectronic device 11 . The receiving electrode 15 has a conductive base 151 and a receiving and fixing structure 152 provided on the conductive base 151 . The accommodating and fixing structure 152 can be inserted into an insertion electrode on a microelectronic device and fix the insertion electrode 16 so that the microelectronic device can be bound to the binding substrate 12 .
绑定基板12例如为Micro LED驱动电路板，例如用于绑定倒装型Micro LED时，绑定基板12上对应一个Micro LED芯片位置设置有两个接收电极15。绑定基板12上设置有可以绑定多个Micro LED芯片的多个接收电极15。用于绑定垂直型Micro LED芯片时，绑定基板12上对应一个Micro LED绑定位置设置一个接收电极15。如图10所示，仅示出了绑定基板12上用于绑定两个Micro LED的两组接收点电极15，其中一组例如为另一组的备用电极。其中，导电基底151例如可以采用Micro LED驱动电路板上的绑定焊盘材料，例如铜、镍、金、银等金属中的一种或者组合，厚度范围约1~2微米。其中容置固定结构152包括容置空腔1525或者柔性结构1522。例如参照图10，容置固定结构152包括导电侧壁1521、柔性结构1522和导电薄片1523。第一导电侧壁1521在第一导电基底151上围合形成填充腔1526，且与导电基底151电连接。柔性结构1522填充于填充腔1526中。导电薄片1523覆盖在容置固定结构152远离导电基底151的一侧，导电薄片1523与导电侧壁1521电连接。其中导电基底151、导电侧壁1521和导电薄片1523均为金属材料，例如铜、镍、金、银等金属中的一种或者组合。导电基底151、导电侧壁1521和导电薄片1523三者可以为相同的金属材料也可以为不同的金属材料，为同种金属材料时三者热膨胀系数一致，绑定效果更佳。柔性结构1522例如可以为硅胶、树脂或者光刻胶等软性材料，柔性结构1522的硬度例如为40~80HA（邵氏A硬度）。导电侧壁1521和柔性结构1522的厚度约为1~2微米，导电薄片1523的厚度小于1微米，例如在300~500纳米之间，较薄的厚度使得其容易被绑定基板上的***电极***并电连接。配合微型电子器件上的***电极设置成尖刺形态则结合更简单。本实施例提供的绑定背板30可实现类似前述第一实施例所述的修复方法，在整个转移修复过程中可以只在最后一次转移后进行加热焊接，无需进行前述相关技术的单点加热焊接，不会影响到周边的焊点质量。并且修复过程中只需清除坏点位置的Micro LED，无需进行前述相关技术中的清除胶层，补充胶材的工艺，修复过程更加简单可行。The binding substrate 12 is, for example, a Micro LED driver circuit board. For example, when used to bind flip-chip Micro LEDs, two receiving electrodes 15 are provided on the binding substrate 12 corresponding to one Micro LED chip. A plurality of receiving electrodes 15 capable of binding a plurality of Micro LED chips are provided on the binding substrate 12 . When used to bind vertical Micro LED chips, a receiving electrode 15 is provided on the binding substrate 12 corresponding to a Micro LED binding position. As shown in FIG. 10 , only two sets of receiving point electrodes 15 on the binding substrate 12 for binding two Micro LEDs are shown, one of which is, for example, a backup electrode of the other group. The conductive substrate 151 may be, for example, a bonding pad material on a Micro LED driving circuit board, such as one or a combination of copper, nickel, gold, silver and other metals, with a thickness ranging from about 1 to 2 microns. The accommodating fixed structure 152 includes an accommodating cavity 1525 or a flexible structure 1522 . For example, referring to FIG. 10 , the accommodating and fixing structure 152 includes a conductive side wall 1521 , a flexible structure 1522 and a conductive sheet 1523 . The first conductive sidewall 1521 encloses a filling cavity 1526 on the first conductive base 151 and is electrically connected to the conductive base 151 . Flexible structure 1522 fills filling cavity 1526. The conductive sheet 1523 covers the side of the accommodating fixed structure 152 away from the conductive base 151 , and the conductive sheet 1523 is electrically connected to the conductive side wall 1521 . The conductive base 151, the conductive sidewalls 1521 and the conductive sheet 1523 are all made of metal materials, such as one or a combination of copper, nickel, gold, silver and other metals. The conductive base 151 , the conductive sidewall 1521 and the conductive sheet 1523 can be made of the same metal material or different metal materials. When they are made of the same metal material, their thermal expansion coefficients are consistent and the binding effect is better. The flexible structure 1522 may be, for example, a soft material such as silicone, resin, or photoresist. The hardness of the flexible structure 1522 may be, for example, 40 to 80 HA (Shore A hardness). The thickness of the conductive sidewall 1521 and the flexible structure 1522 is about 1 to 2 microns, and the thickness of the conductive sheet 1523 is less than 1 micron, for example, between 300 and 500 nanometers. The thinner thickness makes it easy to be bound to the inserted electrode on the substrate. Plug in and connect electrically. The insertion electrode on the microelectronic device is arranged in a spike shape to make the combination easier. The binding backplate 30 provided in this embodiment can implement a repair method similar to that described in the first embodiment. During the entire transfer repair process, heating and welding can only be performed after the last transfer, without the need for single-point heating of the aforementioned related technologies. Welding will not affect the quality of the surrounding solder joints. And during the repair process, you only need to clear the Micro With LED, there is no need to carry out the process of removing the adhesive layer and replenishing the adhesive material in the aforementioned related technologies, making the repair process simpler and more feasible.
【第六实施例】如图11所示，本申请第六实施例提供一种绑定背板30，其包括绑定基板12和接收电极15。接收电极15电连接微型电子器件11。接收电极15具有导电基底151和设置在导电基底151上的容置固定结构152。容置固定结构152可被一微型电子器件上的***电极***并固定***电极16，以使微型电子器件可绑定于绑定基板12上。[Sixth Embodiment] As shown in Figure 11, the sixth embodiment of the present application provides a binding backplane 30, which includes a binding substrate 12 and a receiving electrode 15. The receiving electrode 15 is electrically connected to the microelectronic device 11 . The receiving electrode 15 has a conductive base 151 and a receiving and fixing structure 152 provided on the conductive base 151 . The accommodating and fixing structure 152 can be inserted into an insertion electrode on a microelectronic device and fix the insertion electrode 16 so that the microelectronic device can be bound to the binding substrate 12 .
绑定基板12例如为Micro LED驱动电路板，例如用于绑定倒装型Micro LED时，绑定基板12上对应一个Micro LED芯片位置设置有两个接收电极15。绑定基板12上设置有可以绑定多个Micro LED芯片的多个接收电极15。用于绑定垂直型Micro LED芯片时，绑定基板12上对应一个Micro LED绑定位置设置一个接收电极15。如图11所示，仅示出了绑定基板12上用于绑定两个Micro LED的两组接收点电极15，其中一组例如为另一组的备用电极。其中，导电基底151例如可以采用Micro LED驱动电路板上的绑定焊盘材料，例如铜、镍、金、银等金属中的一种或者组合，厚度范围约1~2微米。The binding substrate 12 is, for example, a Micro LED driver circuit board. For example, when used to bind flip-chip Micro LEDs, two receiving electrodes 15 are provided on the binding substrate 12 corresponding to one Micro LED chip. A plurality of receiving electrodes 15 capable of binding a plurality of Micro LED chips are provided on the binding substrate 12 . When used to bind vertical Micro LED chips, a receiving electrode 15 is provided on the binding substrate 12 corresponding to a Micro LED binding position. As shown in FIG. 11 , only two sets of receiving point electrodes 15 on the binding substrate 12 for binding two Micro LEDs are shown, one of which is, for example, a backup electrode of the other group. The conductive substrate 151 may be, for example, a bonding pad material on a Micro LED driving circuit board, such as one or a combination of copper, nickel, gold, silver and other metals, with a thickness ranging from about 1 to 2 microns.
参照图11，本实施例中容置固定结构152例如包括多个纳米柱1524，多个纳米柱1524设置在导电基底151远离微型电子器件11的一侧。多个纳米柱1524相互间隔设置，且多个纳米柱1524之间的间隙形成容纳微型电子器件上***电极的容置空腔1525。其中多个纳米柱1524中，每个纳米柱1524的高度例如为2~3微米，（接收电极15的整体厚度3~4微米），每个纳米柱1524的宽度（或者直径）例如为200~500纳米之间，相邻两个纳米柱1524之间的间隙与每个纳米柱1524的宽度基本相等，即相邻两个纳米柱1524之间的间隙约为200~500纳米。具体的多个纳米柱1524例如为金属材质，具体的例如可以为铜、镍金属等，金属材质具有较佳的延展性，绑定过程中可发生轻微形变以更好的结合而不易损坏。本实施例提供的绑定背板30设置多个纳米柱1524的结构，可以配合将微型电子器件上的***电极设置为与本实施例中接收电极15相同的结构，可通过纳米柱1524之间的相互穿插实现稳定绑定，实现类似前述第二实施例的修复方案。其中本实施例中容置固定结构152的多个纳米柱1524可以铜、镍等金属材料，或者是锡、镍、铜、铟、铋或者其合金等可焊接金属材料。配合微型电子器件上***电极的设置可实现不加热的焊接绑定或者加热的焊接绑定，根据实际需求进行设置，本实施例并不限制于此。采用本实施例提供的绑定背板30的结构，可以在整个转移修复过程中可以只在最后一次转移后进行加热焊接，或者无需焊接，无需进行前述相关技术的单点加热焊接，不会影响到周边的焊点质量。并且修复过程中只需清除坏点位置的Micro LED，无需进行前述相关技术中的清除胶层，补充胶材的工艺，修复过程更加简单可行。Referring to FIG. 11 , in this embodiment, the accommodating and fixed structure 152 includes, for example, a plurality of nanopillars 1524 , and the plurality of nanopillars 1524 are disposed on a side of the conductive substrate 151 away from the microelectronic device 11 . The plurality of nano-columns 1524 are spaced apart from each other, and the gaps between the plurality of nano-columns 1524 form accommodating cavities 1525 for accommodating electrodes inserted on the microelectronic device. Among the plurality of nano-columns 1524, the height of each nano-column 1524 is, for example, 2 to 3 microns (the overall thickness of the receiving electrode 15 is 3 to 4 microns), and the width (or diameter) of each nano column 1524 is, for example, 200 to 200 microns. Between 500 nanometers, the gap between two adjacent nanocolumns 1524 is basically equal to the width of each nanocolumn 1524, that is, the gap between two adjacent nanocolumns 1524 is about 200~500 nanometers. Specifically, the plurality of nanopillars 1524 are made of metal, such as copper, nickel, etc. Metal materials have better ductility and can be slightly deformed during the binding process to achieve better bonding and are less likely to be damaged. The binding backplate 30 provided in this embodiment is provided with a structure of multiple nano-columns 1524, which can be used to set the insertion electrode on the microelectronic device to have the same structure as the receiving electrode 15 in this embodiment, and can pass between the nano-columns 1524. The mutual interpenetration achieves stable binding and implements a repair solution similar to the aforementioned second embodiment. In this embodiment, the plurality of nano-columns 1524 accommodating the fixed structure 152 can be made of metal materials such as copper and nickel, or weldable metal materials such as tin, nickel, copper, indium, bismuth or alloys thereof. In conjunction with the arrangement of the inserted electrodes on the microelectronic device, non-heated welding bonding or heated welding bonding can be implemented. The settings can be made according to actual needs, and this embodiment is not limited thereto. Using the structure of the binding backplate 30 provided in this embodiment, heating and welding can be performed only after the last transfer during the entire transfer repair process, or no welding is required, and there is no need to perform the single-point heating and welding of the aforementioned related technologies, which will not affect the to the surrounding solder joint quality. And during the repair process, you only need to clear the Micro With LED, there is no need to carry out the process of removing the adhesive layer and replenishing the adhesive material in the aforementioned related technologies, making the repair process simpler and more feasible.
以上所述，仅是本申请的较佳实施例而已，并非对本申请作任何形式上的限制，虽然本申请已以较佳实施例揭露如上，然而并非用以限定本申请，任何熟悉本专业的技术人员，在不脱离本申请技术方案范围内，当可利用上述揭示的技术内容作出些许更动或修饰为等同变化的等效实施例，但凡是未脱离本申请技术方案内容，依据本申请的技术实质对以上实施例所作的任何简单修改、等同变化与修饰，均仍属于本申请技术方案的范围内。The above are only preferred embodiments of the present application and are not intended to limit the present application in any form. Although the preferred embodiments of the present application have been disclosed above, they are not intended to limit the present application. Anyone familiar with this field will Skilled personnel, without departing from the scope of the technical solution of this application, can use the technical content disclosed above to make some changes or modifications into equivalent embodiments with equivalent changes. However, without departing from the content of the technical solution of this application, according to the Technical Substance Any simple modifications, equivalent changes and modifications made to the above embodiments still fall within the scope of the technical solution of the present application.
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Claims (15)

  1. 一种绑定组件（10），包括：A binding component (10) consisting of:
    微型电子器件（11）；Microelectronics (11);
    绑定基板（12）；binding substrate(12);
    第一嵌合电极（13），设置在所述微型电子器件（11）的一侧且电连接所述微型电子器件（11）；A first fitting electrode (13) is provided on one side of the microelectronic device (11) and is electrically connected to the microelectronic device (11);
    第二嵌合电极（14），设置在所述绑定基板（12）的一侧且电连接所述绑定基板（12）；A second embedded electrode (14) is provided on one side of the binding substrate (12) and is electrically connected to the binding substrate (12);
    其中，所述第一嵌合电极（13）和所述第二嵌合电极（14）可相互嵌合以使得所述微型电子器件（11）可绑定于所述绑定基板（12）；所述第一嵌合电极（13）和所述第二嵌合电极（14）中的至少一者作为接收电极（15），另一者作为***电极（16）；所述接收电极（15）包括导电基底（151）和设置在所述导电基底（151）上的容置固定结构（152），所述容置固定结构（152）可被所述***电极（16）***并固定所述***电极（16）。Wherein, the first embedded electrode (13) and the second embedded electrode (14) can be embedded with each other so that the microelectronic device (11) can be bound to the binding substrate (12); At least one of the first chimeric electrode (13) and the second chimeric electrode (14) serves as a receiving electrode (15), and the other serves as an insertion electrode (16); the receiving electrode (15) It includes a conductive base (151) and an accommodating and fixing structure (152) provided on the conductive base (151). The accommodating and fixing structure (152) can be inserted by the insertion electrode (16) and fix the insertion. electrode (16).
  2. 如权利要求1所述的绑定组件（10），其中，所述容置固定结构（152）包括容置空腔（1525）或柔性结构（1522）。The binding assembly (10) of claim 1, wherein the receiving and fixing structure (152) includes a receiving cavity (1525) or a flexible structure (1522).
  3. 如权利要求2所述的绑定组件（10），其中，所述容置固定结构（152）包括：多个纳米柱（1524），所述多个纳米柱（1524）相互间隔设置，所述多个纳米柱（1524）之间的间隙形成容置所述***电极（16）的所述容置空腔（1525）。The binding assembly (10) of claim 2, wherein the accommodation and fixing structure (152) includes: a plurality of nano-columns (1524), the plurality of nano-columns (1524) are spaced apart from each other, and the The gaps between the plurality of nanopillars (1524) form the accommodation cavity (1525) for accommodating the insertion electrode (16).
  4. 如权利要求3所述的绑定组件（10），其中，所述第一嵌合电极（13）和所述第二嵌合电极（14）结构相同，所述第二嵌合电极（14）中任意相邻两个所述纳米柱（1524）之间的间隙距离与所述第一嵌合电极（13）上每个所述纳米柱（1524）的宽度相等。The binding assembly (10) according to claim 3, wherein the first chimeric electrode (13) and the second chimeric electrode (14) have the same structure, and the second chimeric electrode (14) The gap distance between any two adjacent nano-columns (1524) is equal to the width of each nano-column (1524) on the first chimeric electrode (13).
  5. 如权利要求4所述的绑定组件（10），其中，所述第二嵌合电极（14）与所述第一嵌合电极（13）的所述多个纳米柱（1524）采用同种金属材料。The binding assembly (10) of claim 4, wherein the second chimeric electrode (14) and the plurality of nanopillars (1524) of the first chimeric electrode (13) are of the same type. metallic material.
  6. 如权利要求2所述的绑定组件（10），其中，所述容置固定结构（152）包括导电侧壁（1521）、所述柔性结构（1522）和导电薄片（1523）；所述第一导电侧壁（1521）在所述第一导电基底（151）上围合形成填充腔（1526），且与所述导电基底（151）电连接；所述柔性结构（1522）填充于所述填充腔（1526）中；所述导电薄片（1523）覆盖在所述容置固定结构（152）远离所述导电基底（151）的一侧，所述导电薄片（1523）与所述导电侧壁（1521）电连接。The binding assembly (10) of claim 2, wherein the accommodation and fixation structure (152) includes a conductive side wall (1521), the flexible structure (1522) and a conductive sheet (1523); A conductive sidewall (1521) encloses a filling cavity (1526) on the first conductive base (151) and is electrically connected to the conductive base (151); the flexible structure (1522) is filled in the In the filling cavity (1526); the conductive sheet (1523) covers the side of the accommodation fixed structure (152) away from the conductive base (151), the conductive sheet (1523) and the conductive side wall (1521) Electrical connection.
  7. 如权利要求6所述的绑定组件（10），其中，所述***电极（16）包括：The binding assembly (10) of claim 6, wherein said insertion electrode (16) includes:
    焊料层（161）； solder layer(161);
    导电尖刺（162），设置在所述焊料层（161）的一侧，所述导电尖刺（162）可贯穿所述导电薄片（1523）并刺入所述柔性结构（1522）中，以通过所述导电薄片（1523）与所述接收电极（15）电连接。Conductive spikes (162) are provided on one side of the solder layer (161). The conductive spikes (162) can penetrate the conductive sheet (1523) and penetrate into the flexible structure (1522) to It is electrically connected to the receiving electrode (15) through the conductive sheet (1523).
  8. 如权利要求6所述的绑定组件（10），其中，所述导电基底（151）、所述导电侧壁（1521）和所述导电薄片（1523）为同种金属材料。The binding assembly (10) of claim 6, wherein the conductive base (151), the conductive sidewall (1521) and the conductive sheet (1523) are made of the same metal material.
  9. 如权利要求6所述的绑定组件（10），其中，所述导电薄片（1523）的厚度小于1微米。The binding assembly (10) of claim 6, wherein the thickness of the conductive sheet (1523) is less than 1 micron.
  10. 一种微型电子部件（20），包括：A miniature electronic component (20) comprising:
    微型电子器件（11）；Microelectronics (11);
    接收电极（15），电连接所述微型电子器件（11），所述接收电极（15）具有导电基底（151）和设置在所述导电基底（151）上的容置固定结构（152），所述容置固定结构（152）可被一绑定基板上的***电极***并固定所述***电极；以使所述微型电子器件（11）可绑定于所述绑定基板上。The receiving electrode (15) is electrically connected to the microelectronic device (11). The receiving electrode (15) has a conductive base (151) and a receiving and fixing structure (152) provided on the conductive base (151), The accommodation and fixation structure (152) can be inserted into and fixed by an insertion electrode on a binding substrate; so that the microelectronic device (11) can be bound to the binding substrate.
  11. 如权利要求10所述的微型电子部件（20），其中，所述容置固定结构（152）包括导电侧壁（1521）、柔性结构（1522）和导电薄片（1523）；所述导电侧壁（1521）在所述导电基底（151）上围合形成填充腔（1526），且与所述导电基底（151）电连接；所述柔性结构（1522）填充于所述填充腔（1526）中；所述导电薄片（1523）覆盖在所述容置固定结构（152）远离所述导电基底（151）的一侧，所述导电薄片（1523）与所述导电侧壁（1521）电连接。The microelectronic component (20) of claim 10, wherein the receiving and fixing structure (152) includes a conductive side wall (1521), a flexible structure (1522) and a conductive sheet (1523); the conductive side wall (1521) A filling cavity (1526) is formed on the conductive substrate (151) and is electrically connected to the conductive substrate (151); the flexible structure (1522) is filled in the filling cavity (1526) ; The conductive sheet (1523) covers the side of the accommodating and fixed structure (152) away from the conductive base (151), and the conductive sheet (1523) is electrically connected to the conductive side wall (1521).
  12. 、如权利要求10所述的微型电子部件（20），其中，所述容置固定结构（152）还包括多个纳米柱（1524），设置在所述导电基底（151）远离所述微型电子器件（11）的一侧；所述多个纳米柱（1524）相互间隔设置，所述多个纳米柱（1524）之间的间隙形成容纳所述***电极的容置空腔（1525）。. The microelectronic component (20) according to claim 10, wherein the accommodation and fixing structure (152) further includes a plurality of nanopillars (1524), which are arranged on the conductive base (151) away from the microelectronics. On one side of the device (11); the plurality of nano-columns (1524) are spaced apart from each other, and the gaps between the plurality of nano-columns (1524) form an accommodation cavity (1525) for accommodating the inserted electrode.
  13. 一种绑定背板（30），包括：A binding backplane (30), including:
    绑定基板（12）；binding substrate(12);
    接收电极（15），电连接所述微型电子器件（11），所述接收电极（15）具有导电基底（151）和设置在所述导电基底（151）上的容置固定结构（152），所述容置固定结构（152）可被一微型电子器件上的***电极***并固定所述***电极；以使所述微型电子器件可绑定于所述绑定基板（12）上。The receiving electrode (15) is electrically connected to the microelectronic device (11). The receiving electrode (15) has a conductive base (151) and a receiving and fixing structure (152) provided on the conductive base (151), The accommodation and fixation structure (152) can be inserted into and fixed by an insertion electrode on a microelectronic device; so that the microelectronic device can be bound to the binding substrate (12).
  14. 如权利要求13所述的绑定背板（30），其中，所述容置固定结构（152）包括导电侧壁（1521）、柔性结构（1522）和导电薄片（1523）；所述导电侧壁（1521）在所述导电基底（151）上围合形成填充腔（1526），且与所述导电基底（151）电连接；所述柔性结构（1522）填充于所述填充腔（1526）中；所述导电薄片（1523）覆盖在所述容置固定结构（152）远离所述导电基底（151）的一侧，所述导电薄片（1523）与所述导电侧壁（1521）电连接。The binding backplate (30) of claim 13, wherein the accommodation and fixing structure (152) includes a conductive side wall (1521), a flexible structure (1522) and a conductive sheet (1523); the conductive side The wall (1521) encloses a filling cavity (1526) on the conductive base (151) and is electrically connected to the conductive base (151); the flexible structure (1522) is filled in the filling cavity (1526) in; the conductive sheet (1523) covers the side of the accommodation fixed structure (152) away from the conductive base (151), and the conductive sheet (1523) is electrically connected to the conductive side wall (1521) .
  15. 如权利要求13所述的绑定背板（30），其中，所述接收电极（15）还包括：多个纳米柱（1524），设置在所述导电基底（151）远离所述微型电子器件（11）的一侧；所述多个纳米柱（1524）相互间隔设置的多个纳米柱（1524），所述多个纳米柱（1524）之间的间隙形成所述容纳所述***电极的容置空腔（1525）。The binding backplane (30) of claim 13, wherein the receiving electrode (15) further includes: a plurality of nanopillars (1524) disposed on the conductive substrate (151) away from the microelectronic device One side of (11); the plurality of nano-columns (1524) are spaced apart from each other, and the gaps between the plurality of nano-columns (1524) form the space for accommodating the inserted electrode. Accommodation cavity (1525).
PCT/CN2022/105370 2022-07-13 2022-07-13 Bonding assembly, micro electronic component and bonding backplate WO2024011442A1 (en)

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CN109786352A (en) * 2017-11-14 2019-05-21 维耶尔公司 Integrated and bonding of the micro element in system substrate
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CN102169845A (en) * 2011-02-22 2011-08-31 中国科学院微电子研究所 Multi-layer mixed synchronization bonding structure and method for three-dimensional packaging
CN110100309A (en) * 2016-12-23 2019-08-06 株式会社流明斯 Miniature LED module and its manufacturing method
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