WO2024001047A1 - Method for establishing temperature distribution map library and method for acquiring wafer surface temperature - Google Patents

Method for establishing temperature distribution map library and method for acquiring wafer surface temperature Download PDF

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WO2024001047A1
WO2024001047A1 PCT/CN2022/136250 CN2022136250W WO2024001047A1 WO 2024001047 A1 WO2024001047 A1 WO 2024001047A1 CN 2022136250 W CN2022136250 W CN 2022136250W WO 2024001047 A1 WO2024001047 A1 WO 2024001047A1
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simulation
temperature
temperature distribution
wafer
boundary conditions
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PCT/CN2022/136250
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French (fr)
Chinese (zh)
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黄帅帅
肖蕴章
钟国仿
康博文
陈炳安
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深圳市纳设智能装备股份有限公司
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/20—Design optimisation, verification or simulation
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2119/00—Details relating to the type or aim of the analysis or the optimisation
    • G06F2119/08—Thermal analysis or thermal optimisation

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  • This application relates to the field, and in particular, to a method for establishing a temperature distribution library and a method for obtaining the wafer surface temperature.
  • this application provides a method for establishing a temperature distribution library, including:
  • the surface temperature distribution of the wafer under different boundary conditions is obtained to establish a temperature distribution library.
  • obtaining the surface temperature distribution of the wafer through a temperature test includes:
  • the surface temperature distribution of the wafer is determined based on each temperature and the position of the corresponding temperature measuring ceramic ring.
  • the wafer simulation analysis is performed according to the set multiple sets of simulation parameters to determine at least one set of candidate simulation parameters that make the simulation results consistent with the temperature test results, including:
  • the simulation parameter corresponding to the simulation result is determined to be a candidate simulation parameter.
  • the step of bringing the at least one set of candidate simulation parameters into the changed boundary conditions and performing simulation analysis again includes:
  • the method further includes:
  • the only candidate simulation result is determined as the fitting simulation parameter.
  • the surface temperature distribution of the wafer under different boundary conditions is obtained based on the fit simulation parameters, including:
  • a temperature distribution library is established.
  • the simulation parameters include at least one of parameters of graphite and insulation materials in the high-temperature reaction chamber, parameters of reaction gas, internal pressure information of the reaction chamber, and parameters of quartz material that maintains the pressure difference between inside and outside.
  • the boundary conditions include at least one of the heating power of the graphite component, the flow rate of the reaction gas, the temperature of the infrared temperature measurement point, the heat transfer amount of the equipment, and the rotation speed of the wafer.
  • the simulation results include the surface temperature distribution of the wafer corresponding to the simulation parameters.
  • this application provides a method for obtaining the wafer surface temperature, including:
  • the surface temperature distribution cloud diagram of the target wafer is determined from the temperature distribution library obtained by using the method described in any of the previous embodiments.
  • this application provides a device for establishing a temperature distribution library, which device includes:
  • a candidate simulation parameter acquisition module is used to perform wafer simulation analysis based on the set multiple sets of simulation parameters to determine at least one set of candidate simulation parameters that make the simulation results consistent with the temperature test results;
  • the consistent simulation parameter determination module is used to change the boundary conditions of the temperature test and conduct the temperature test again, and bring the at least one set of candidate simulation parameters into the changed boundary conditions to conduct simulation analysis again to determine a set of parameters that make the simulation results consistent with The temperature test results agree with the simulation parameters;
  • a temperature distribution library creation module is used to obtain the surface temperature distribution of the wafer under different boundary conditions based on the fitting simulation parameters, so as to establish a temperature distribution library.
  • the present application provides a terminal device, including a memory and a processor.
  • the memory stores a computer program.
  • the computer program executes the temperature distribution described in any one of the preceding embodiments when running on the processor.
  • the present application provides a readable storage medium that stores a computer program that executes the method for establishing a temperature distribution library described in any of the foregoing embodiments or the foregoing embodiments when the computer program is run on a processor.
  • the method for obtaining the wafer surface temperature is not limited to any of the foregoing embodiments or the foregoing embodiments.
  • the embodiment of the present application discloses a method for establishing a temperature distribution library and a method for obtaining the surface temperature of a wafer.
  • the method for establishing a temperature distribution library obtains the surface temperature distribution of the wafer through a temperature test, and performs operations according to multiple sets of simulation parameters. Wafer simulation analysis to determine at least one set of candidate simulation parameters that make the simulation results consistent with the temperature test results, changing the boundary conditions of the temperature test and performing the temperature test again, and bringing the at least one set of candidate simulation parameters into the changed boundary Conditions are simulated and analyzed again to determine a set of fitting simulation parameters that make the simulation results consistent with the temperature test results. Based on the fitting simulation parameters, the surface temperature distribution of the wafer under different boundary conditions is obtained to establish a temperature distribution library. .
  • This application establishes a temperature distribution library through a combination of temperature testing and simulation analysis. Not only can the temperature distribution library be used to determine the wafer surface temperature distribution more accurately and quickly, avoiding multiple temperature tests, but also reducing the cost of the wafer surface. The cost of obtaining the circular surface temperature.
  • Figure 1 shows a schematic flow chart of a method for establishing a temperature distribution library proposed by an embodiment of the present application.
  • FIG. 2 shows a schematic flowchart of obtaining the temperature distribution on the wafer surface in a method for establishing a temperature distribution library proposed by an embodiment of the present application.
  • FIG. 3 shows a schematic diagram of the temperature curve of the wafer surface along the flow direction in a method for establishing a temperature distribution library proposed by an embodiment of the present application.
  • FIG. 4 shows a schematic flowchart of determining candidate simulation parameters in a method for establishing a temperature distribution library proposed by an embodiment of the present application.
  • FIG. 5 shows a schematic flowchart of determining suitable simulation parameters in a method for establishing a temperature distribution library proposed by an embodiment of the present application.
  • Figure 6 shows a schematic diagram of the temperature distribution library obtained in a method for establishing a temperature distribution library proposed in the embodiment of the present application.
  • FIG. 7 shows a schematic flowchart of the temperature corresponding to the temperature distribution on the wafer surface in a method for establishing a temperature distribution library proposed by an embodiment of the present application.
  • FIG. 8 shows a schematic flowchart of a method for obtaining a wafer surface temperature proposed by an embodiment of the present application.
  • FIG. 9 shows a schematic structural diagram of a device for establishing a temperature distribution library proposed by an embodiment of the present application.
  • an embodiment of the present application proposes a method for establishing a temperature distribution library.
  • the method for establishing a temperature distribution library includes steps S100 to S400:
  • Step S100 Obtain the surface temperature distribution of the wafer through a temperature test.
  • the surface temperature distribution of the wafer can be obtained through a designed temperature test. If the process is changed, the surface temperature distribution of the wafer under different processes can be obtained through the temperature test. As shown in Figure 2, the above step S100 includes the following sub-steps:
  • Sub-step S110 Set multiple temperature measuring ceramic rings on the surface of the wafer.
  • the temperature difference of the temperature-measuring ceramic ring is small, and the temperature-measuring ceramic ring will shrink or expand at high temperatures.
  • the temperature measuring ceramic ring will have different deformation due to the difference in temperature, and the deformation will be maintained at normal temperature for a certain period of time.
  • Sub-step S120 Determine the corresponding temperature according to the deformation amount of the temperature measuring ceramic ring.
  • each temperature-measuring ceramic ring Compare the deformation of each temperature-measuring ceramic ring with the standard deformation card, and refer to the corresponding temperature conversion table. Then the corresponding temperature of each temperature-measuring ceramic ring in the high-temperature reaction chamber can be determined by the ring diameter of the temperature-measuring ceramic ring.
  • Sub-step S130 Determine the surface temperature distribution of the wafer based on each temperature and the position of the corresponding temperature measuring ceramic ring.
  • test results of the wafer at a certain process temperature can be determined, that is, the test results of the wafer under the corresponding boundary conditions of the process can be determined.
  • surface temperature distribution The temperature curve of the wafer surface along the flow direction under a certain process is shown in Figure 3. The middle temperature of the wafer is higher than the edge temperature.
  • the temperature-measuring ceramic ring can be used to accurately measure the heating condition of the wafer surface. By laying the temperature-measuring ceramic ring in different positions, the surface temperature distribution of the measured wafer can be obtained more accurately, and can be used for subsequent simulations. Analysis provides the basis.
  • Step S200 Perform wafer simulation analysis based on the set multiple sets of simulation parameters to determine at least one set of candidate simulation parameters that make the simulation results consistent with the temperature test results.
  • step S200 includes the following sub-steps:
  • Sub-step S210 Carry out simulation analysis of the fluid-solid-thermal coupling physical field based on the set multiple sets of simulation parameters, and obtain multiple simulation results.
  • the simulation parameters include at least one of the following parameters, for example, parameters of graphite and insulation materials in the high-temperature reaction chamber, such as density, thermal conductivity, heat capacity, emissivity and other physical information; parameters of the reaction gas, such as density, thermal conductivity, heat Physical information such as capacity and compressibility; pressure information inside the reaction chamber and parameters of the quartz material that maintains the pressure difference between the inside and outside, such as density, thermal conductivity, heat capacity, emissivity, optical parameters and other physical information; gas flow status in the reaction chamber and graphite The power of the component being heated by induction; information such as the initial flow rate and initial temperature of the reaction gas; thermal resistance and radiation information between solid and solid contact walls; when performing the step of grid discretization before solution setting, the selection of grid type and The size of the grid, etc.
  • parameters of graphite and insulation materials in the high-temperature reaction chamber such as density, thermal conductivity, heat capacity, emissivity and other physical information
  • parameters of the reaction gas such as density, thermal conductivity, heat Physical information such
  • Sub-step S220 When the difference between the simulation result and the temperature test result is within a preset range, determine the simulation parameter corresponding to the simulation result as a candidate simulation parameter.
  • the multiple simulation results After obtaining multiple simulation results corresponding to multiple sets of simulation parameters, compare the multiple simulation results with the temperature test results obtained through the temperature test.
  • the difference between the temperature test results and the simulation results is within the preset range, in other words, When the temperature test results are relatively close to the simulation results, the simulation results are considered to be consistent with the temperature test results, and the simulation parameters corresponding to the simulation results can be determined as candidate simulation parameters. If the difference between at least one simulation result and the temperature test result is within a preset range, at least one set of simulation parameters can be determined as candidate simulation parameters.
  • variables that can change the temperature distribution on the wafer surface are used as independent variables, such as the material parameters of gas and solid, the contact state between walls, the degree of grid discretization, and other parameters, and are brought into the same environment as during the experiment.
  • the gas inlet and outlet flow rate and other known parameters can be used to obtain the temperature distribution on the wafer surface.
  • a fixed solution is obtained, that is, when the wafer surface temperature distribution obtained from the experiment is obtained, different solutions can exist for each independent variable.
  • at least one set of candidate simulation parameters is obtained that can achieve the same results under specific boundary conditions.
  • a, b, c, d, and e respectively represent the independent variables of different parameters
  • y represents the wafer surface temperature distribution
  • f represents the boundary condition
  • Wafer surface temperature distribution y 1 f 1 (a, b, c, d, e%) obtained through experiments under boundary condition f 1
  • Step S300 Change the boundary conditions of the temperature test and conduct the temperature test again, bring at least one set of candidate simulation parameters into the changed boundary conditions and conduct simulation analysis again to determine a set of suitable simulation parameters that make the simulation results consistent with the temperature test results.
  • different working conditions correspond to different process recipes, that is, they correspond to different boundary conditions.
  • Changing the boundary conditions means changing the process recipe of the wafer.
  • temperature test results under different working conditions, that is, when the gas input amount, heating power, etc. are different, the corresponding measured results will be obtained.
  • temperature test results If the boundary conditions of the temperature test are changed multiple times, multiple temperature test results will be obtained.
  • Bringing at least one set of candidate simulation parameters into the changed boundary conditions and performing simulation analysis again will obtain at least one simulation result. Compare the temperature test results corresponding to the changed boundary conditions with at least one corresponding simulation result. If only the simulation results corresponding to a set of candidate simulation parameters are consistent with the temperature test results, then it is determined that the set of candidate simulation parameters are consistent simulation parameters; If it is determined that the simulation results corresponding to at least one set of simulation parameters are consistent with the temperature test results under the boundary conditions, the boundary conditions will be changed again, and the temperature test will be conducted under the changed boundary conditions until the only set of temperature tests is determined.
  • the candidate simulation parameters whose results are consistent with the corresponding simulation results are the consistent simulation parameters. Among them, as shown in Figure 5, bringing at least one set of candidate simulation parameters into the changed boundary conditions and performing simulation analysis again includes the following sub-steps:
  • Sub-step S310 Bring at least one set of candidate simulation parameters into the changed boundary conditions and perform simulation analysis again to obtain at least one simulation result.
  • the changed boundary condition is f 2
  • the wafer surface temperature distribution y 2 f 2 (a, b, c, d, e,...) obtained through the temperature test.
  • Y n f 2 (an , bn , c n , d n , en , ).
  • Sub-step S320 Compare the temperature test results under the changed boundary conditions with at least one corresponding simulation result.
  • This embodiment can finally determine the simulation analysis parameters of the fluid-solid-thermal coupling physical field that combines radiation, convection, and heat conduction as heat exchange methods, as well as turbulence-based gas flow methods.
  • the fitting simulation parameters will be solidified, such as determining the physical parameters of graphite components, insulation materials, quartz and gases in the reaction chamber, determining the pressure inside the reaction chamber, determining the state of gas flow, determining the grid type and Grid size, determining thermal resistance and radiation information between walls, etc.
  • This embodiment can optimize the internal structure of the wafer reaction chamber through simulation analysis and reduce the frequency of temperature tests, resulting in low cost and short cycle.
  • Step S400 Obtain the surface temperature distribution of the wafer under different boundary conditions based on the fitted simulation parameters to establish a temperature distribution library.
  • step S400 includes the following sub-steps:
  • Sub-step S410 Determine at least one corresponding surface temperature distribution cloud diagram by matching the surface temperature distribution corresponding to the simulation parameters and different boundary conditions.
  • the surface temperature distribution cloud diagram of the wafer under different boundary conditions can be obtained in the numerical simulation software.
  • the wafer surface temperature distribution under different boundary conditions such as gas flow, heating power, temperature measurement point temperature, and outer cooling water flow is determined through calculation, that is, the surface temperature distribution cloud diagram of the wafer.
  • the surface temperature distribution cloud diagram of the wafer under the boundary conditions corresponding to a certain process recipe is shown in Figure 7.
  • Sub-step S420 Store different boundary conditions and surface temperature distribution cloud images in one-to-one correspondence.
  • Each boundary condition input to the numerical simulation software is matched one-to-one with the corresponding surface temperature distribution cloud image, and stored in the memory.
  • Sub-step S430 Establish a temperature distribution library based on at least one surface temperature distribution cloud image.
  • this application can not only shorten the time to determine the wafer surface temperature distribution and avoid multiple temperature tests, so as to determine the wafer surface temperature distribution more accurately and quickly, but also reduce the acquisition time of the wafer surface temperature. cost.
  • this application also proposes a method for obtaining the wafer surface temperature.
  • the specific steps are as follows:
  • Step S10 Enter the process recipe of the target wafer.
  • Step S20 Determine the surface temperature distribution cloud diagram of the target wafer from the temperature distribution library obtained by the above method according to the boundary conditions corresponding to the process recipe.
  • the wafer surface temperature distribution cloud diagram corresponding to the boundary conditions in the memory will be obtained to guide the development and development of the process. analyze.
  • the temperature distribution library obtained by the above method is stored in the memory.
  • This embodiment can quickly determine the surface temperature distribution cloud diagram corresponding to the process recipe of the input target wafer by using the temperature distribution gallery obtained by the above method, and can quickly analyze the impact of other factors on the process without considering the impact of the wafer surface temperature on the process.
  • the influence of process results can make the verification cycle of process recipes shorter and the verification cost lower.
  • FIG. 9 shows a schematic structural diagram of a device 10 for establishing a temperature distribution library provided by an embodiment of the present application.
  • the device 10 for establishing the temperature distribution library includes:
  • the surface temperature acquisition module 11 is used to acquire the surface temperature distribution of the wafer through temperature tests.
  • the candidate simulation parameter acquisition module 12 is configured to perform wafer simulation analysis based on multiple sets of set simulation parameters to determine at least one set of candidate simulation parameters that make the simulation results consistent with the temperature test results.
  • the simulation parameter determination module 13 is adapted to change the boundary conditions of the temperature test and perform the temperature test again, and bring at least one set of candidate simulation parameters into the changed boundary conditions to perform simulation analysis again to determine a set of simulation results that make the simulation results consistent with the temperature test results. The fit fits the simulation parameters.
  • the temperature distribution library creation module 14 is used to obtain the surface temperature distribution of the wafer under different boundary conditions based on the fitting simulation parameters, so as to establish a temperature distribution library.
  • this application also proposes a computer device, including a memory and a processor.
  • the memory stores a computer program.
  • the computer program executes the method for establishing the temperature distribution library or the acquisition of the wafer surface temperature in the above embodiments. method.
  • This embodiment also provides a readable storage medium that stores a computer program.
  • the computer program executes the method for establishing a temperature distribution library or the method for obtaining the wafer surface temperature in the above embodiment.
  • each block in the flowchart or block diagram may represent a module, segment, or portion of code that contains one or more executable functions for implementing the specified logical function instruction.
  • the functions noted in the block may occur out of the order noted in the figures. For example, two consecutive blocks may actually execute substantially in parallel, or they may sometimes execute in the reverse order, depending on the functionality involved.
  • each block in the structure diagrams and/or flowchart illustrations, and combinations of blocks in the structure diagrams and/or flowchart illustrations can be configured with specialized hardware-based systems that perform the specified functions or actions. to be implemented, or may be implemented using a combination of dedicated hardware and computer instructions.
  • each functional module or unit in various embodiments of the present application can be integrated together to form an independent part, each module can exist alone, or two or more modules can be integrated to form an independent part.
  • the computer software product is stored in a storage medium, including Several instructions are used to cause a computer device (which can be a smart phone, a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods of various embodiments of the present application.
  • the aforementioned storage media include: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), magnetic disk or optical disk and other media that can store program code. .

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Abstract

The embodiments of the present application disclose a method for establishing a temperature distribution map library and a method for acquiring a wafer surface temperature. The method for establishing a temperature distribution map library involves: performing a temperature test to obtain a surface temperature distribution situation of a wafer; performing wafer simulation analysis to determine candidate simulation parameters causing a simulation result to conform to the temperature test result; changing the boundary conditions of the temperature test and again performing a temperature test; inputting the candidate simulation parameters into the changed boundary conditions and again performing simulation analysis, so as to determine a set of conforming simulation parameters causing the simulation result to conform to the temperature test result; based on the conforming simulation parameters, obtaining surface temperature distribution situations for the wafer under different boundary conditions, so as to construct a temperature distribution map library. By means of the temperature distribution map library, the present application is not only able to more-precisely and rapidly determine a wafer surface temperature distribution situation, avoiding performing multiple temperature tests, but is additionally able to reduce the cost of acquiring a wafer surface temperature.

Description

温度分布图库的建立方法和晶圆表面温度的获取方法Method for establishing temperature distribution library and method for obtaining wafer surface temperature 技术领域Technical field
本申请涉及领域，尤其涉及一种温度分布图库的建立方法和晶圆表面温度的获取方法。This application relates to the field, and in particular, to a method for establishing a temperature distribution library and a method for obtaining the wafer surface temperature.
发明背景Background of the invention
新能源汽车领域对碳化硅器件的需求与日俱增。从碳化硅衬底片到制作成为碳化硅器件需要经过非常多且复杂的过程，其中利用化学气相沉积(CVD)的方式在碳化硅衬底上生长碳化硅外延层的成本是最高的。在碳化硅衬底生长过程中，晶圆表面温度分布的不一致性对制程的影响越来越大。The demand for silicon carbide devices in the field of new energy vehicles is increasing day by day. From silicon carbide substrate wafers to making silicon carbide devices, many and complex processes are required. Among them, the cost of growing a silicon carbide epitaxial layer on a silicon carbide substrate using chemical vapor deposition (CVD) is the highest. During the growth process of silicon carbide substrates, the inconsistency in temperature distribution on the wafer surface has an increasing impact on the process.
目前并没有方法能够较为准确地获取晶圆的表面温度分布情况，也没有明确的算法及参数适用于碳化硅外延高温反应室的流固热耦合场仿真分析，通过仿真的方式能够获得晶圆表面温度分布情况，但这可能与实际情况存在较大的偏差，并且难以获得适合求解高温反应室内部的求解器、算法及参数设置。At present, there is no method that can accurately obtain the surface temperature distribution of the wafer, and there are no clear algorithms and parameters suitable for the simulation analysis of the fluid-solid thermal coupling field of the silicon carbide epitaxial high-temperature reaction chamber. The wafer surface can be obtained through simulation. Temperature distribution, but this may deviate greatly from the actual situation, and it is difficult to obtain solvers, algorithms and parameter settings suitable for solving the interior of the high-temperature reaction chamber.
发明内容Contents of the invention
第一方面，本申请提供一种温度分布图库的建立方法，包括：In the first aspect, this application provides a method for establishing a temperature distribution library, including:
通过温度试验获取晶圆的表面温度分布情况；Obtain the surface temperature distribution of the wafer through temperature tests;
根据设置的多组仿真参数进行晶圆仿真分析以确定使仿真结果与温度试验结果契合的至少一组候选仿真参数；Perform wafer simulation analysis based on the set multiple sets of simulation parameters to determine at least one set of candidate simulation parameters that make the simulation results consistent with the temperature test results;
改变所述温度试验的边界条件再次进行温度试验，将所述至少一组候选仿真参数带入改变后的边界条件再次进行仿真分析，以确定一组使仿真结果与温度试验结果契合的契合仿真参数；Change the boundary conditions of the temperature test and conduct the temperature test again, and bring the at least one set of candidate simulation parameters into the changed boundary conditions and conduct simulation analysis again to determine a set of suitable simulation parameters that make the simulation results consistent with the temperature test results. ;
基于所述契合仿真参数得到不同边界条件下所述晶圆的表面温度分布情况，以建立得到温度分布图库。Based on the fitted simulation parameters, the surface temperature distribution of the wafer under different boundary conditions is obtained to establish a temperature distribution library.
在可选的实施方式中，所述通过温度试验获取晶圆的表面温度分布情况，包括：In an optional embodiment, obtaining the surface temperature distribution of the wafer through a temperature test includes:
在晶圆的表面设置多个测温陶瓷环；Set multiple temperature measuring ceramic rings on the surface of the wafer;
根据所述测温陶瓷环的变形量确定对应的温度；Determine the corresponding temperature according to the deformation amount of the temperature measuring ceramic ring;
基于各个所述温度和对应的测温陶瓷环的位置确定所述晶圆的表面温度分布情况。The surface temperature distribution of the wafer is determined based on each temperature and the position of the corresponding temperature measuring ceramic ring.
在可选的实施方式中，所述根据设置的多组仿真参数进行晶圆仿真分析以确 定使仿真结果与温度试验结果契合的至少一组候选仿真参数，包括：In an optional embodiment, the wafer simulation analysis is performed according to the set multiple sets of simulation parameters to determine at least one set of candidate simulation parameters that make the simulation results consistent with the temperature test results, including:
基于设置的多组仿真参数进行流固热耦合物理场的仿真分析，得到多个仿真结果；Based on the set multiple sets of simulation parameters, simulation analysis of the fluid-solid-thermal coupling physical field was performed, and multiple simulation results were obtained;
当所述仿真结果与温度试验结果的差值在预设范围内时，确定所述仿真结果对应的仿真参数为候选仿真参数。When the difference between the simulation result and the temperature test result is within a preset range, the simulation parameter corresponding to the simulation result is determined to be a candidate simulation parameter.
在可选的实施方式中，所述将所述至少一组候选仿真参数带入改变后的边界条件再次进行仿真分析，包括：In an optional implementation, the step of bringing the at least one set of candidate simulation parameters into the changed boundary conditions and performing simulation analysis again includes:
将所述至少一组候选仿真参数带入改变后的边界条件再次进行仿真分析，得到至少一个仿真结果；Bring the at least one set of candidate simulation parameters into the changed boundary conditions and perform simulation analysis again to obtain at least one simulation result;
将所述改变后的边界条件下的温度试验结果与对应的至少一个仿真结果进行对比。Compare the temperature test results under the changed boundary conditions with at least one corresponding simulation result.
在可选的实施方式中，在所述改变所述温度试验的边界条件再次进行温度试验，将所述至少一组候选仿真参数带入改变后的边界条件再次进行仿真分析之后，还包括：In an optional embodiment, after the boundary conditions of the temperature test are changed and the temperature test is performed again, and the at least one set of candidate simulation parameters are brought into the changed boundary conditions and the simulation analysis is performed again, the method further includes:
若所述温度试验结果与所述改变所述温度试验的边界条件下的多个候选仿真结果契合，则再次改变边界条件，并在所述再次改变边界条件下进行温度试验，直至确定相同边界条件下有唯一一个候选仿真结果与温度试验结果契合；If the temperature test results are consistent with the multiple candidate simulation results under changing the boundary conditions of the temperature test, then change the boundary conditions again, and conduct the temperature test under the changed boundary conditions again until the same boundary conditions are determined. There is only one candidate below whose simulation results are consistent with the temperature test results;
将所述唯一一个候选仿真结果确定为所述契合仿真参数。The only candidate simulation result is determined as the fitting simulation parameter.
在可选的实施方式中，所述基于所述契合仿真参数得到不同边界条件下所述晶圆的表面温度分布情况，包括：In an optional implementation, the surface temperature distribution of the wafer under different boundary conditions is obtained based on the fit simulation parameters, including:
通过所述契合仿真参数和不同边界条件对应的表面温度分布情况确定对应的至少一个表面温度分布云图；Determine corresponding at least one surface temperature distribution cloud diagram through the surface temperature distribution corresponding to the simulation parameters and different boundary conditions;
将所述不同边界条件和所述表面温度分布云图一一对应进行存储；Store the different boundary conditions and the surface temperature distribution cloud image in one-to-one correspondence;
基于所述至少一个表面温度分布云图，建立得到温度分布图库。Based on the at least one surface temperature distribution cloud image, a temperature distribution library is established.
在可选的实施方式中，所述仿真参数包括高温反应室内石墨和绝热材料的参数、反应气体的参数、反应室内部压强信息和保持内外压力差的石英材料的参数中至少一种。In an optional embodiment, the simulation parameters include at least one of parameters of graphite and insulation materials in the high-temperature reaction chamber, parameters of reaction gas, internal pressure information of the reaction chamber, and parameters of quartz material that maintains the pressure difference between inside and outside.
在可选的实施方式中，所述边界条件包括石墨部件的发热功率、反应气体流量、红外测温点温度、设备换热量、以及晶圆旋转的转速中的至少一种。In an optional embodiment, the boundary conditions include at least one of the heating power of the graphite component, the flow rate of the reaction gas, the temperature of the infrared temperature measurement point, the heat transfer amount of the equipment, and the rotation speed of the wafer.
在可选的实施方式中，所述仿真结果包括所述仿真参数对应的晶圆的表面温度分布情况。In an optional implementation, the simulation results include the surface temperature distribution of the wafer corresponding to the simulation parameters.
第二方面，本申请提供一种晶圆表面温度的获取方法，包括：In a second aspect, this application provides a method for obtaining the wafer surface temperature, including:
输入目标晶圆的工艺配方；Enter the process recipe of the target wafer;
根据所述工艺配方对应的边界条件从采用前述实施方式中任意一项所述的方法得到的温度分布图库中确定所述目标晶圆的表面温度分布云图。According to the boundary conditions corresponding to the process recipe, the surface temperature distribution cloud diagram of the target wafer is determined from the temperature distribution library obtained by using the method described in any of the previous embodiments.
第三方面，本申请提供一种温度分布图库的建立装置，所述装置包括：In a third aspect, this application provides a device for establishing a temperature distribution library, which device includes:
表面温度获取模块，用于通过温度试验获取晶圆的表面温度分布情况；Surface temperature acquisition module, used to obtain the surface temperature distribution of the wafer through temperature tests;
候选仿真参数获取模块，用于根据设置的多组仿真参数进行晶圆仿真分析以确定使仿真结果与温度试验结果契合的至少一组候选仿真参数；A candidate simulation parameter acquisition module is used to perform wafer simulation analysis based on the set multiple sets of simulation parameters to determine at least one set of candidate simulation parameters that make the simulation results consistent with the temperature test results;
契合仿真参数确定模块，用于改变所述温度试验的边界条件再次进行温度试验，将所述至少一组候选仿真参数带入改变后的边界条件再次进行仿真分析，以确定一组使仿真结果与温度试验结果契合的契合仿真参数；The consistent simulation parameter determination module is used to change the boundary conditions of the temperature test and conduct the temperature test again, and bring the at least one set of candidate simulation parameters into the changed boundary conditions to conduct simulation analysis again to determine a set of parameters that make the simulation results consistent with The temperature test results agree with the simulation parameters;
温度分布图库建立模块，用于基于所述契合仿真参数得到不同边界条件下所述晶圆的表面温度分布情况，以建立得到温度分布图库。A temperature distribution library creation module is used to obtain the surface temperature distribution of the wafer under different boundary conditions based on the fitting simulation parameters, so as to establish a temperature distribution library.
第四方面，本申请提供一种终端设备，包括存储器和处理器，所述存储器存储有计算机程序，所述计算机程序在所述处理器上运行时执行前述实施方式任一项所述的温度分布图库的建立方法或前述实施方式所述的晶圆表面温度的获取方法。In a fourth aspect, the present application provides a terminal device, including a memory and a processor. The memory stores a computer program. The computer program executes the temperature distribution described in any one of the preceding embodiments when running on the processor. The method for establishing a library or the method for obtaining the wafer surface temperature described in the previous embodiments.
第五方面，本申请提供一种可读存储介质，其存储有计算机程序，所述计算机程序在处理器上运行时执行前述实施方式任一项所述的温度分布图库的建立方法或前述实施方式所述的晶圆表面温度的获取方法。In a fifth aspect, the present application provides a readable storage medium that stores a computer program that executes the method for establishing a temperature distribution library described in any of the foregoing embodiments or the foregoing embodiments when the computer program is run on a processor. The method for obtaining the wafer surface temperature.
本申请的实施例具有如下有益效果：The embodiments of the present application have the following beneficial effects:
本申请实施例公开了一种温度分布图库的建立方法和晶圆表面温度的获取方法，该温度分布图库的建立方法通过温度试验获取晶圆的表面温度分布情况，根据设置的多组仿真参数进行晶圆仿真分析以确定使仿真结果与温度试验结果契合的至少一组候选仿真参数，改变所述温度试验的边界条件再次进行温度试验，将所述至少一组候选仿真参数带入改变后的边界条件再次进行仿真分析，以确定一组使仿真结果与温度试验结果契合的契合仿真参数，基于所述契合仿真参数得到不同边界条件下所述晶圆的表面温度分布情况，以建立得到温度分布图库。本申请通过温度试验与仿真分析相结合的方式建立温度分布图库，不仅可以通过该温度分布图库更加准确、快速地确定晶圆表面温度分布情况，避免了进行多次的温度试验，还可以降低晶圆表面温度的获取成本。The embodiment of the present application discloses a method for establishing a temperature distribution library and a method for obtaining the surface temperature of a wafer. The method for establishing a temperature distribution library obtains the surface temperature distribution of the wafer through a temperature test, and performs operations according to multiple sets of simulation parameters. Wafer simulation analysis to determine at least one set of candidate simulation parameters that make the simulation results consistent with the temperature test results, changing the boundary conditions of the temperature test and performing the temperature test again, and bringing the at least one set of candidate simulation parameters into the changed boundary Conditions are simulated and analyzed again to determine a set of fitting simulation parameters that make the simulation results consistent with the temperature test results. Based on the fitting simulation parameters, the surface temperature distribution of the wafer under different boundary conditions is obtained to establish a temperature distribution library. . This application establishes a temperature distribution library through a combination of temperature testing and simulation analysis. Not only can the temperature distribution library be used to determine the wafer surface temperature distribution more accurately and quickly, avoiding multiple temperature tests, but also reducing the cost of the wafer surface. The cost of obtaining the circular surface temperature.
附图简要说明Brief description of the drawings
为了更清楚地说明本申请的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本申请的某些实施例，因此不应被看作是对本申请保护范围的限定。在各个附图中，类似的构成部分采用类似的编号。In order to explain the technical solutions of the present application more clearly, the drawings required to be used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present application and therefore should not be interpreted as It is regarded as limiting the protection scope of this application. In the various drawings, similar components are numbered similarly.
图1示出了本申请实施例提出的一种温度分布图库的建立方法的流程示意图。Figure 1 shows a schematic flow chart of a method for establishing a temperature distribution library proposed by an embodiment of the present application.
图2示出了本申请实施例提出的一种温度分布图库的建立方法中获取晶圆表面温度分布情况的流程示意图。FIG. 2 shows a schematic flowchart of obtaining the temperature distribution on the wafer surface in a method for establishing a temperature distribution library proposed by an embodiment of the present application.
图3示出了本申请实施例提出的一种温度分布图库的建立方法中晶圆表面沿流动方向的温度曲线示意图。FIG. 3 shows a schematic diagram of the temperature curve of the wafer surface along the flow direction in a method for establishing a temperature distribution library proposed by an embodiment of the present application.
图4示出了本申请实施例提出的一种温度分布图库的建立方法中确定候选仿真参数的流程示意图。FIG. 4 shows a schematic flowchart of determining candidate simulation parameters in a method for establishing a temperature distribution library proposed by an embodiment of the present application.
图5示出了本申请实施例提出的一种温度分布图库的建立方法中确定契合仿真参数的流程示意图。FIG. 5 shows a schematic flowchart of determining suitable simulation parameters in a method for establishing a temperature distribution library proposed by an embodiment of the present application.
图6示出了本申请实施例提出的一种温度分布图库的建立方法中得到温度分布图库示意图。Figure 6 shows a schematic diagram of the temperature distribution library obtained in a method for establishing a temperature distribution library proposed in the embodiment of the present application.
图7示出了本申请实施例提出的一种温度分布图库的建立方法中晶圆表面温度分布情况对应的温度的流程示意图。FIG. 7 shows a schematic flowchart of the temperature corresponding to the temperature distribution on the wafer surface in a method for establishing a temperature distribution library proposed by an embodiment of the present application.
图8示出了本申请实施例提出的一种晶圆表面温度的获取方法的流程示意图。FIG. 8 shows a schematic flowchart of a method for obtaining a wafer surface temperature proposed by an embodiment of the present application.
图9示出了本申请实施例提出的一种温度分布图库的建立装置的结构示意图。FIG. 9 shows a schematic structural diagram of a device for establishing a temperature distribution library proposed by an embodiment of the present application.
主要元件符号说明：Description of main component symbols:
10-温度分布图库的建立装置；11-表面温度获取模块；12-候选仿真参数获取模块；13-契合仿真参数确定模块；14-温度分布图库建立模块。10-Device for establishing temperature distribution library; 11-Surface temperature acquisition module; 12-Candidate simulation parameter acquisition module; 13-Conforming simulation parameter determination module; 14-Temperature distribution library creation module.
实施本申请的方式How to implement this application
下面将结合本申请实施例中附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all of the embodiments.
通常在此处附图中描述和示出的本申请实施例的组件可以以各种不同的配置来布置和设计。因此，以下对在附图中提供的本申请的实施例的详细描述并非旨在限制要求保护的本申请的范围，而是仅仅表示本申请的选定实施例。基于本申请的实施例，本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本申请保护的范围。The components of the embodiments of the present application generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations. Accordingly, the following detailed description of the embodiments of the application provided in the appended drawings is not intended to limit the scope of the claimed application, but rather to represent selected embodiments of the application. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without any creative work shall fall within the scope of protection of this application.
在下文中，可在本申请的各种实施例中使用的术语“包括”、“具有”及其同源词仅意在表示特定特征、数字、步骤、操作、元件、组件或前述项的组合，并且不应被理解为首先排除一个或更多个其它特征、数字、步骤、操作、元件、组件或前述项的组合的存在或增加一个或更多个特征、数字、步骤、操作、元件、组件或前述项的组合的可能性。Hereinafter, the terms "comprising", "having" and their cognates, which may be used in various embodiments of the present application, are only intended to represent specific features, numbers, steps, operations, elements, components or combinations of the foregoing. and should not be understood as first excluding the presence of one or more other features, numbers, steps, operations, elements, components or combinations of the foregoing or adding one or more features, numbers, steps, operations, elements, components or the possibility of a combination of the foregoing.
此外，术语“第一”、“第二”、“第三”等仅用于区分描述，而不能理解为指示或暗示相对重要性。In addition, the terms "first", "second", "third", etc. are only used to distinguish descriptions and shall not be understood as indicating or implying relative importance.
除非另有限定，否则在这里使用的所有术语(包括技术术语和科学术语)具有与本申请的各种实施例所属领域普通技术人员通常理解的含义相同的含义。术语(诸如在一般使用的词典中限定的术语)将被解释为具有与在相关技术领域中的语境含义相同的含义并且将不被解释为具有理想化的含义或过于正式的含义，除非在本申请的各种实施例中被清楚地限定。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which various embodiments of this application belong. Terms (such as those defined in commonly used dictionaries) will be interpreted to have the same meaning as the contextual meaning in the relevant technical field and will not be interpreted as having an idealized meaning or an overly formal meaning, except in The various embodiments of the present application are clearly defined.
请参照图1，本申请实施例提出一种温度分布图库的建立方法，示范性地，该温度分布图库的建立方法包括步骤S100～S400：Referring to Figure 1, an embodiment of the present application proposes a method for establishing a temperature distribution library. Exemplarily, the method for establishing a temperature distribution library includes steps S100 to S400:
步骤S100：通过温度试验获取晶圆的表面温度分布情况。Step S100: Obtain the surface temperature distribution of the wafer through a temperature test.
在本实施例中，通过设计温度试验可以获取晶圆的表面温度分布情况，改变工艺，就可以通过温度试验获取晶圆在不同工艺下表面温度分布情况。如图2所示，上述步骤S100包括以下子步骤：In this embodiment, the surface temperature distribution of the wafer can be obtained through a designed temperature test. If the process is changed, the surface temperature distribution of the wafer under different processes can be obtained through the temperature test. As shown in Figure 2, the above step S100 includes the following sub-steps:
子步骤S110：在晶圆的表面设置多个测温陶瓷环。Sub-step S110: Set multiple temperature measuring ceramic rings on the surface of the wafer.
在晶圆表面不同的位置铺设一定数量的测温陶瓷环。其中，测温陶瓷环的温差较小，且测温陶瓷环在高温时将发生收缩或者膨胀，换言之，将测温陶瓷环在高温反应室中放置一段时间后，因高温反应室中不同位置对应的温度存在差异，以及测温陶瓷环所铺设的位置不同，测温陶瓷环将会因为温度的差异产生不同的变形量，并且该变形量会在常温下保持一定的时间。Lay a certain number of temperature measuring ceramic rings at different positions on the wafer surface. Among them, the temperature difference of the temperature-measuring ceramic ring is small, and the temperature-measuring ceramic ring will shrink or expand at high temperatures. In other words, after the temperature-measuring ceramic ring is placed in the high-temperature reaction chamber for a period of time, due to the corresponding changes in different positions in the high-temperature reaction chamber, There are differences in temperature, and the position where the temperature measuring ceramic ring is laid is different, the temperature measuring ceramic ring will have different deformation due to the difference in temperature, and the deformation will be maintained at normal temperature for a certain period of time.
子步骤S120：根据测温陶瓷环的变形量确定对应的温度。Sub-step S120: Determine the corresponding temperature according to the deformation amount of the temperature measuring ceramic ring.
将各个测温陶瓷环的变形量与标准变形卡片进行比较，参照对应的温度转换表，则可以通过测温陶瓷环的环直径确定每一个测温陶瓷环在高温反应室内所对应的温度。Compare the deformation of each temperature-measuring ceramic ring with the standard deformation card, and refer to the corresponding temperature conversion table. Then the corresponding temperature of each temperature-measuring ceramic ring in the high-temperature reaction chamber can be determined by the ring diameter of the temperature-measuring ceramic ring.
子步骤S130：基于各个温度和对应的测温陶瓷环的位置确定晶圆的表面温度分布情况。Sub-step S130: Determine the surface temperature distribution of the wafer based on each temperature and the position of the corresponding temperature measuring ceramic ring.
通过每一个测温陶瓷环所对应的温度，以及每一个测温陶瓷环对应的铺设位置，可以确定在某一工艺温度下晶圆的试验结果，即确定在该工艺对应的边界条件下晶圆的表面温度分布情况。在某一工艺下晶圆的表面沿流动方向的温度曲线如图3所示，晶圆的中间温度高于边缘温度。Through the temperature corresponding to each temperature-measuring ceramic ring and the corresponding laying position of each temperature-measuring ceramic ring, the test results of the wafer at a certain process temperature can be determined, that is, the test results of the wafer under the corresponding boundary conditions of the process can be determined. surface temperature distribution. The temperature curve of the wafer surface along the flow direction under a certain process is shown in Figure 3. The middle temperature of the wafer is higher than the edge temperature.
本实施例中使用测温陶瓷环可以精确测定晶圆表面的受热情况，通过将测温陶瓷环铺设在不同的位置可以更加准确地获取测量晶圆的表面温度分布情况，并可以为后续的仿真分析提供基础。In this embodiment, the temperature-measuring ceramic ring can be used to accurately measure the heating condition of the wafer surface. By laying the temperature-measuring ceramic ring in different positions, the surface temperature distribution of the measured wafer can be obtained more accurately, and can be used for subsequent simulations. Analysis provides the basis.
步骤S200：根据设置的多组仿真参数进行晶圆仿真分析以确定使仿真结果与温度试验结果契合的至少一组候选仿真参数。Step S200: Perform wafer simulation analysis based on the set multiple sets of simulation parameters to determine at least one set of candidate simulation parameters that make the simulation results consistent with the temperature test results.
在本实施例中，在利用测温陶瓷环获得晶圆表面温度分布情况后，将在与上述温度试验相同的边界条件下进行仿真分析，得到至少一组候选仿真参数。在进行仿真分析时，将设置多组仿真参数进行仿真分析。其中，边界条件包括石墨部 件的发热功率、反应气体流量、红外测温点温度、设备换热量、以及晶圆旋转的转速等信息。如图4所示，步骤S200包括以下子步骤：In this embodiment, after using the temperature measuring ceramic ring to obtain the temperature distribution on the wafer surface, simulation analysis will be performed under the same boundary conditions as the above temperature test to obtain at least one set of candidate simulation parameters. When conducting simulation analysis, multiple sets of simulation parameters will be set for simulation analysis. Among them, the boundary conditions include information such as the heating power of the graphite component, the flow rate of the reaction gas, the temperature of the infrared temperature measurement point, the heat transfer amount of the equipment, and the rotation speed of the wafer. As shown in Figure 4, step S200 includes the following sub-steps:
子步骤S210：基于设置的多组仿真参数进行流固热耦合物理场的仿真分析，得到多个仿真结果。Sub-step S210: Carry out simulation analysis of the fluid-solid-thermal coupling physical field based on the set multiple sets of simulation parameters, and obtain multiple simulation results.
在与温度试验相同的边界条件下对高温反应室中晶圆的表面温度分布情况进行流固热耦合物理场的仿真分析时，多种仿真分析参数对仿真分析的数值求解结果均存在一定的影响，因此在进行仿真分析时，需要通过大量的数值模拟工作去进行确定。换言之，将通过设置多组仿真参数进行仿真分析得到多个仿真结果，即得到不同仿真参数对应的晶圆的表面温度分布情况。When conducting simulation analysis of the fluid-solid thermal coupling physical field on the surface temperature distribution of the wafer in the high-temperature reaction chamber under the same boundary conditions as the temperature test, various simulation analysis parameters have a certain impact on the numerical solution results of the simulation analysis. , so when conducting simulation analysis, it needs to be determined through a large amount of numerical simulation work. In other words, multiple simulation results will be obtained by setting multiple sets of simulation parameters for simulation analysis, that is, the surface temperature distribution of the wafer corresponding to different simulation parameters will be obtained.
其中，多组仿真参数是通过不断地调试仿真参数及仿真参数组合得到的。仿真参数包括以下参数中的至少一种，例如，高温反应室内石墨和绝热材料的参数，如密度、导热系数、热容、辐射率等物理信息；反应气体的参数，如密度、导热系数、热容、压缩性等物理信息；反应室内部压强信息及保持内外压力差的石英材料的参数，如密度、导热系数、热容、辐射率、光学参数等物理信息；气体在反应室内流动状态及石墨部件被感应加热生热的功率；反应气体的初始流量、初始温度等信息；固体与固体接触壁面间热阻及辐射信息；进行求解设置前网格离散化的步骤时，网格类型的选择和网格尺寸的大小等。Among them, multiple sets of simulation parameters are obtained by continuously debugging simulation parameters and simulation parameter combinations. The simulation parameters include at least one of the following parameters, for example, parameters of graphite and insulation materials in the high-temperature reaction chamber, such as density, thermal conductivity, heat capacity, emissivity and other physical information; parameters of the reaction gas, such as density, thermal conductivity, heat Physical information such as capacity and compressibility; pressure information inside the reaction chamber and parameters of the quartz material that maintains the pressure difference between the inside and outside, such as density, thermal conductivity, heat capacity, emissivity, optical parameters and other physical information; gas flow status in the reaction chamber and graphite The power of the component being heated by induction; information such as the initial flow rate and initial temperature of the reaction gas; thermal resistance and radiation information between solid and solid contact walls; when performing the step of grid discretization before solution setting, the selection of grid type and The size of the grid, etc.
子步骤S220：当仿真结果与温度试验结果的差值在预设范围内时，确定仿真结果对应的仿真参数为候选仿真参数。Sub-step S220: When the difference between the simulation result and the temperature test result is within a preset range, determine the simulation parameter corresponding to the simulation result as a candidate simulation parameter.
在得到多组仿真参数对应的多个仿真结果后，将多个仿真结果与通过温度试验获得的温度试验结果进行比较，当温度试验结果与仿真结果的差值在预设范围内时，换言之，当温度试验结果与仿真结果比较接近时，则认为该仿真结果与温度试验结果契合，即可确定该仿真结果对应的仿真参数为候选仿真参数。若存在至少一个仿真结果与温度试验结果的差值在预设范围内，则可以确定至少一组仿真参数作为候选仿真参数。After obtaining multiple simulation results corresponding to multiple sets of simulation parameters, compare the multiple simulation results with the temperature test results obtained through the temperature test. When the difference between the temperature test results and the simulation results is within the preset range, in other words, When the temperature test results are relatively close to the simulation results, the simulation results are considered to be consistent with the temperature test results, and the simulation parameters corresponding to the simulation results can be determined as candidate simulation parameters. If the difference between at least one simulation result and the temperature test result is within a preset range, at least one set of simulation parameters can be determined as candidate simulation parameters.
在进行仿真时，将能够改变晶圆表面温度分布的变量作为自变量，如气体和固体的材料参数、各壁面间的接触状态、网格离散化的程度等参数，带入与试验时相同的气体进出口流量和其他已知的参数，可以获得晶圆表面温度分布的状况。当同时有多个自变量时，求得一个固定解，即求试验得到的晶圆表面温度分布时，每个自变量可以存在不同解。此时会获得至少一组候选仿真参数，可在特定的边界条件下获得相同的结果。具体方程对应如下：y＝f(a、b、c、d、e、......)。When performing simulations, variables that can change the temperature distribution on the wafer surface are used as independent variables, such as the material parameters of gas and solid, the contact state between walls, the degree of grid discretization, and other parameters, and are brought into the same environment as during the experiment. The gas inlet and outlet flow rate and other known parameters can be used to obtain the temperature distribution on the wafer surface. When there are multiple independent variables at the same time, a fixed solution is obtained, that is, when the wafer surface temperature distribution obtained from the experiment is obtained, different solutions can exist for each independent variable. At this point, at least one set of candidate simulation parameters is obtained that can achieve the same results under specific boundary conditions. The specific equation corresponds as follows: y=f(a, b, c, d, e,...).
其中，a、b、c、d、e分别表示不同参数的自变量，y表示晶圆表面温度分布，f表示边界条件。Among them, a, b, c, d, and e respectively represent the independent variables of different parameters, y represents the wafer surface temperature distribution, and f represents the boundary condition.
在边界条件f 1下通过试验获得的晶圆表面温度分布y 1＝f 1(a、b、c、d、e......) Wafer surface temperature distribution y 1 =f 1 (a, b, c, d, e...) obtained through experiments under boundary condition f 1
该方程存在至少一组解，比如(a 1、b 1、c 1、d 1、e 1、......)、(a 2、b 2、c 2、 d 2、e 2、......)、......(a n、b n、c n、d n、e n、......)，n为正整数。将以上解均作为候选仿真参数进行保存。 There is at least one set of solutions to this equation, such as (a 1 , b 1 , c 1 , d 1 , e 1 ,...), (a 2 , b 2 , c 2 , d 2 , e 2 ,. .....), ...(a n , b n , c n , d n , e n , ...), n is a positive integer. Save all the above solutions as candidate simulation parameters.
步骤S300：改变温度试验的边界条件再次进行温度试验，将至少一组候选仿真参数带入改变后的边界条件再次进行仿真分析，以确定一组使仿真结果与温度试验结果契合的契合仿真参数。Step S300: Change the boundary conditions of the temperature test and conduct the temperature test again, bring at least one set of candidate simulation parameters into the changed boundary conditions and conduct simulation analysis again to determine a set of suitable simulation parameters that make the simulation results consistent with the temperature test results.
在本实施例中，不同的工况对应不同的工艺配方，即对应不同的边界条件，改变边界条件即改变晶圆的工艺配方。在改变的边界条件下再次进行温度试验，将得到改变后的边界条件对应的温度试验结果，换言之，在不同的工况下，即在气体通入量、加热功率等不同时，将测量得到对应的温度试验结果。若多次改变温度试验的边界条件，则将获得多个温度试验结果。In this embodiment, different working conditions correspond to different process recipes, that is, they correspond to different boundary conditions. Changing the boundary conditions means changing the process recipe of the wafer. Conduct the temperature test again under the changed boundary conditions, and you will get the temperature test results corresponding to the changed boundary conditions. In other words, under different working conditions, that is, when the gas input amount, heating power, etc. are different, the corresponding measured results will be obtained. temperature test results. If the boundary conditions of the temperature test are changed multiple times, multiple temperature test results will be obtained.
将至少一组候选仿真参数带入改变后的边界条件再次进行仿真分析，将得到至少一个仿真结果。将改变后的边界条件对应的温度试验结果与对应的至少一个仿真结果相比较，若仅有一组候选仿真参数对应的仿真结果与温度试验结果契合，则确定该组候选仿真参数为契合仿真参数；若确定至少一组仿真参数对应的仿真结果与该边界条件下温度试验结果契合时，将再次改变边界条件，并在该改变后的边界条件下进行温度试验，直至确定唯一一组使温度试验结果与对应的仿真结果契合的候选仿真参数，该候选仿真参数为契合仿真参数。其中，如图5所示，将至少一组候选仿真参数带入改变后的边界条件再次进行仿真分析包括以下子步骤：Bringing at least one set of candidate simulation parameters into the changed boundary conditions and performing simulation analysis again will obtain at least one simulation result. Compare the temperature test results corresponding to the changed boundary conditions with at least one corresponding simulation result. If only the simulation results corresponding to a set of candidate simulation parameters are consistent with the temperature test results, then it is determined that the set of candidate simulation parameters are consistent simulation parameters; If it is determined that the simulation results corresponding to at least one set of simulation parameters are consistent with the temperature test results under the boundary conditions, the boundary conditions will be changed again, and the temperature test will be conducted under the changed boundary conditions until the only set of temperature tests is determined. The candidate simulation parameters whose results are consistent with the corresponding simulation results are the consistent simulation parameters. Among them, as shown in Figure 5, bringing at least one set of candidate simulation parameters into the changed boundary conditions and performing simulation analysis again includes the following sub-steps:
子步骤S310：将至少一组候选仿真参数带入改变后的边界条件再次进行仿真分析，得到至少一个仿真结果。Sub-step S310: Bring at least one set of candidate simulation parameters into the changed boundary conditions and perform simulation analysis again to obtain at least one simulation result.
将获得的至少一组候选仿真参数带入改变后的边界条件再次进行仿真分析，得到对应的至少一个仿真结果。若多次改变边界条件，将至少一组候选仿真参数分别带入多个改变后的不同的边界条件下进行仿真分析，将获得每一个改变后的边界条件对应的至少一个仿真结果。Bring the obtained at least one set of candidate simulation parameters into the changed boundary conditions and perform simulation analysis again to obtain at least one corresponding simulation result. If the boundary conditions are changed multiple times, at least one set of candidate simulation parameters are brought into multiple different changed boundary conditions for simulation analysis, and at least one simulation result corresponding to each changed boundary condition will be obtained.
示范性地，改变后的边界条件为f 2，通过温度试验获得的晶圆表面温度分布y 2＝f 2(a、b、c、d、e、......)。 Exemplarily, the changed boundary condition is f 2 , and the wafer surface temperature distribution y 2 =f 2 (a, b, c, d, e,...) obtained through the temperature test.
将改变后的边界条件f 2和以上获得的至少一组候选仿真参数，如(a 1、b 1、c 1、d 1、e 1、......)、(a 2、b 2、c 2、d 2、e 2、......)、......(a n、b n、c n、d n、e n、......)代入方程，每组候选仿真参数均会对应一个结果，即通过仿真得到的晶圆表面的温度分布如下： Combine the changed boundary condition f 2 and at least one set of candidate simulation parameters obtained above, such as (a 1 , b 1 , c 1 , d 1 , e 1 ,...), (a 2 , b 2 , c 2 , d 2 , e 2 ,...),... (a n , b n , c n , d n , e n ,...) are substituted into the equation, Each set of candidate simulation parameters will correspond to a result, that is, the temperature distribution on the wafer surface obtained through simulation is as follows:
Y 1＝f 2(a 1、b 1、c 1、d 1、e 1、......) Y 1 =f 2 (a 1 , b 1 , c 1 , d 1 , e 1 ,...)
Y 2＝f 2(a 2、b 2、c 2、d 2、e 2、......) Y 2 =f 2 (a 2 , b 2 , c 2 , d 2 , e 2 ,...)
.........
Y n＝f 2(a n、b n、c n、d n、e n、......)。 Y n =f 2 (an , bn , c n , d n , en , ...).
子步骤S320：将改变后的边界条件下的温度试验结果与对应的至少一个仿真结果进行对比。Sub-step S320: Compare the temperature test results under the changed boundary conditions with at least one corresponding simulation result.
将改变后的边界条件下得到的温度试验结果与对应的至少一个仿真结果进行比对，当温度试验结果与改变后的边界条件下的至少一个仿真结果契合时，换言之，当该边界条件下的至少一个仿真结果与对应的温度试验结果的差值在预设范围内时，将再次改变边界条件并在对应的温度条件下进行温度试验，直至确定相同边界条件下仅有一个仿真结果与温度试验结果契合，确定该仿真结果对应的候选仿真参数为契合仿真参数。并认为该契合仿真参数适用于所有工况，即该契合仿真参数适用于所有边界条件。Compare the temperature test results obtained under the changed boundary conditions with at least one corresponding simulation result. When the temperature test results are consistent with at least one simulation result under the changed boundary conditions, in other words, when the temperature test results under the changed boundary conditions are consistent with When the difference between at least one simulation result and the corresponding temperature test result is within the preset range, the boundary conditions will be changed again and the temperature test will be performed under the corresponding temperature conditions until it is determined that there is only one simulation result and the temperature test under the same boundary conditions. The results are consistent, and the candidate simulation parameters corresponding to the simulation results are determined to be consistent simulation parameters. It is also considered that the consistent simulation parameters are applicable to all working conditions, that is, the consistent simulation parameters are applicable to all boundary conditions.
本实施例最终可以确定集合了以辐射、对流、热传导为热量交换方式，以及以湍流为主的气体流动方式的流固热耦合物理场的仿真分析参数。确定契合仿真参数之后将对该契合仿真参数进行固化，例如确定反应室内的石墨部件、绝热材料、石英及气体的物理参数、确定反应室内部的压力、确定气体流动的状态、确定网格类型及网格尺寸、确定壁面间的热阻和辐射信息等。本实施例通过仿真分析可以对晶圆反应室的内部结构进行优化，并且减少了进行温度试验的频率，使得成本低以及周期短。This embodiment can finally determine the simulation analysis parameters of the fluid-solid-thermal coupling physical field that combines radiation, convection, and heat conduction as heat exchange methods, as well as turbulence-based gas flow methods. After determining the fitting simulation parameters, the fitting simulation parameters will be solidified, such as determining the physical parameters of graphite components, insulation materials, quartz and gases in the reaction chamber, determining the pressure inside the reaction chamber, determining the state of gas flow, determining the grid type and Grid size, determining thermal resistance and radiation information between walls, etc. This embodiment can optimize the internal structure of the wafer reaction chamber through simulation analysis and reduce the frequency of temperature tests, resulting in low cost and short cycle.
步骤S400：基于契合仿真参数得到不同边界条件下晶圆的表面温度分布情况，以建立得到温度分布图库。Step S400: Obtain the surface temperature distribution of the wafer under different boundary conditions based on the fitted simulation parameters to establish a temperature distribution library.
在确定具有普适性和准确性的契合仿真参数后，通过契合仿真参数可以确定不同边界条件下晶圆的表面温度分布情况，并且将大量的晶圆的表面温度分布情况的结果进行汇总，从而建立固定工艺的温度分布图库，以用于快速调出不同工艺配方时，晶圆表面温度分布情况对应的温度云图。如图6所示，步骤S400包括以下子步骤：After determining the fitting simulation parameters that are universal and accurate, the surface temperature distribution of the wafer under different boundary conditions can be determined by fitting the simulation parameters, and the results of the surface temperature distribution of a large number of wafers can be summarized, so as to Establish a temperature distribution library for a fixed process to quickly call up temperature cloud diagrams corresponding to the temperature distribution on the wafer surface when using different process recipes. As shown in Figure 6, step S400 includes the following sub-steps:
子步骤S410：通过契合仿真参数和不同边界条件对应的表面温度分布情况确定对应的至少一个表面温度分布云图。Sub-step S410: Determine at least one corresponding surface temperature distribution cloud diagram by matching the surface temperature distribution corresponding to the simulation parameters and different boundary conditions.
将最终确定的契合仿真参数输入数值模拟软件，通过进行边界条件变更后，可以在数值模拟软件中获得不同边界条件下晶圆的表面温度分布云图。换言之，通过计算确定不同气体流量、加热功率、测温点温度、外侧冷却水流量等边界条件下的晶圆表面温度分布的情况，即晶圆的表面温度分布云图。其中，在某一工艺配方对应的边界条件下晶圆的表面温度分布云图如图7所示，晶圆表面不同的位置存在一定的温差，即中心温度高于边缘温度。Input the finally determined fitting simulation parameters into the numerical simulation software. After changing the boundary conditions, the surface temperature distribution cloud diagram of the wafer under different boundary conditions can be obtained in the numerical simulation software. In other words, the wafer surface temperature distribution under different boundary conditions such as gas flow, heating power, temperature measurement point temperature, and outer cooling water flow is determined through calculation, that is, the surface temperature distribution cloud diagram of the wafer. Among them, the surface temperature distribution cloud diagram of the wafer under the boundary conditions corresponding to a certain process recipe is shown in Figure 7. There is a certain temperature difference at different locations on the wafer surface, that is, the center temperature is higher than the edge temperature.
子步骤S420：将不同边界条件和表面温度分布云图一一对应进行存储。Sub-step S420: Store different boundary conditions and surface temperature distribution cloud images in one-to-one correspondence.
将每一个输入数值模拟软件的边界条件与对应的表面温度分布云图一一对应，存储至存储器中。Each boundary condition input to the numerical simulation software is matched one-to-one with the corresponding surface temperature distribution cloud image, and stored in the memory.
子步骤S430：基于至少一个表面温度分布云图，建立得到温度分布图库。Sub-step S430: Establish a temperature distribution library based on at least one surface temperature distribution cloud image.
通过存储的至少一个边界条件及其对应的表面温度分布云图，即将获得的边界条件及其对应的表面温度分布云图的结果进行汇总，建立得到固定工艺的温度分布图库。By storing at least one boundary condition and its corresponding surface temperature distribution cloud diagram, the results of the obtained boundary conditions and their corresponding surface temperature distribution cloud diagram are summarized, and a temperature distribution library of the fixed process is established.
本申请通过温度分布图库不仅可以缩短晶圆表面温度分布情况的确定时间，避免多次进行温度试验，从而可以更加准确、快速地确定晶圆表面温度分布情况，还可以降低晶圆表面温度的获取成本。Through the temperature distribution library, this application can not only shorten the time to determine the wafer surface temperature distribution and avoid multiple temperature tests, so as to determine the wafer surface temperature distribution more accurately and quickly, but also reduce the acquisition time of the wafer surface temperature. cost.
如图8所示，本申请还提出一种晶圆表面温度的获取方法，具体步骤如下：As shown in Figure 8, this application also proposes a method for obtaining the wafer surface temperature. The specific steps are as follows:
步骤S10：输入目标晶圆的工艺配方。Step S10: Enter the process recipe of the target wafer.
步骤S20：根据工艺配方对应的边界条件从采用上述方法得到的温度分布图库中确定目标晶圆的表面温度分布云图。Step S20: Determine the surface temperature distribution cloud diagram of the target wafer from the temperature distribution library obtained by the above method according to the boundary conditions corresponding to the process recipe.
在进行工艺验证时，输入目标晶圆对应的工艺配方，即输入该工艺配方对应的边界条件后，将获取存储器中该边界条件对应的晶圆表面温度分布云图，以用于指导工艺的开发与分析。其中，该存储器中存储有采用上述方法得到的温度分布图库。When performing process verification, input the process recipe corresponding to the target wafer, that is, after inputting the boundary conditions corresponding to the process recipe, the wafer surface temperature distribution cloud diagram corresponding to the boundary conditions in the memory will be obtained to guide the development and development of the process. analyze. Among them, the temperature distribution library obtained by the above method is stored in the memory.
本实施例通过采用上述方法得到的温度分布图库能快速确定输入目标晶圆的工艺配方对应的表面温度分布云图，可以在不考虑晶圆表面温度对工艺的影响下，更快地分析其他因素对工艺结果的影响，可以使工艺配方的验证周期更短，验证成本更低。This embodiment can quickly determine the surface temperature distribution cloud diagram corresponding to the process recipe of the input target wafer by using the temperature distribution gallery obtained by the above method, and can quickly analyze the impact of other factors on the process without considering the impact of the wafer surface temperature on the process. The influence of process results can make the verification cycle of process recipes shorter and the verification cost lower.
基于上述实施例的温度分布图库的建立方法，图9示出了本申请实施例提供的温度分布图库的建立装置10的结构示意图。该温度分布图库的建立装置10包括：Based on the method for establishing a temperature distribution library in the above embodiment, FIG. 9 shows a schematic structural diagram of a device 10 for establishing a temperature distribution library provided by an embodiment of the present application. The device 10 for establishing the temperature distribution library includes:
表面温度获取模块11，用于通过温度试验获取晶圆的表面温度分布情况。The surface temperature acquisition module 11 is used to acquire the surface temperature distribution of the wafer through temperature tests.
候选仿真参数获取模块12，用于根据设置的多组仿真参数进行晶圆仿真分析以确定使仿真结果与温度试验结果契合的至少一组候选仿真参数。The candidate simulation parameter acquisition module 12 is configured to perform wafer simulation analysis based on multiple sets of set simulation parameters to determine at least one set of candidate simulation parameters that make the simulation results consistent with the temperature test results.
契合仿真参数确定模块13，用于改变温度试验的边界条件再次进行温度试验，将至少一组候选仿真参数带入改变后的边界条件再次进行仿真分析，以确定一组使仿真结果与温度试验结果契合的契合仿真参数。The simulation parameter determination module 13 is adapted to change the boundary conditions of the temperature test and perform the temperature test again, and bring at least one set of candidate simulation parameters into the changed boundary conditions to perform simulation analysis again to determine a set of simulation results that make the simulation results consistent with the temperature test results. The fit fits the simulation parameters.
温度分布图库建立模块14，用于基于契合仿真参数得到不同边界条件下晶圆的表面温度分布情况，以建立得到温度分布图库。The temperature distribution library creation module 14 is used to obtain the surface temperature distribution of the wafer under different boundary conditions based on the fitting simulation parameters, so as to establish a temperature distribution library.
此外，本申请还提出一种计算机设备，包括存储器和处理器，存储器存储有计算机程序，计算机程序在处理器上运行时执行上述实施例的温度分布图库的建立方法或的晶圆表面温度的获取方法。In addition, this application also proposes a computer device, including a memory and a processor. The memory stores a computer program. When the computer program is run on the processor, the computer program executes the method for establishing the temperature distribution library or the acquisition of the wafer surface temperature in the above embodiments. method.
本实施例还提供了一种可读存储介质，其存储有计算机程序，计算机程序在处理器上运行时执行上述实施例的温度分布图库的建立方法或的晶圆表面温度的获取方法。This embodiment also provides a readable storage medium that stores a computer program. When the computer program is run on a processor, the computer program executes the method for establishing a temperature distribution library or the method for obtaining the wafer surface temperature in the above embodiment.
在本申请所提供的几个实施例中，应该理解到，所揭露的装置和方法，也可以通过其它的方式实现。以上所描述的装置实施例仅仅是示意性的，例如，附图中的流程图和结构图显示了根据本申请的多个实施例的装置、方法和计算机程序产品的可能实现的体系架构、功能和操作。在这点上，流程图或框图中的每个方框可以代表一个模块、程序段或代码的一部分，模块、程序段或代码的一部分包含一个或多个用于实现规定的逻辑功能的可执行指令。也应当注意，在作为替换的实现方式中，方框中所标注的功能也可以以不同于附图中所标注的顺序发生。例如，两个连续的方框实际上可以基本并行地执行，它们有时也可以按相反的顺序执行，这依所涉及的功能而定。也要注意的是，结构图和/或流程图中的每个方框、以及结构图和/或流程图中的方框的组合，可以用执行规定的功能或动作的专用的基于硬件的***来实现，或者可以用专用硬件与计算机指令的组合来实现。In the several embodiments provided in this application, it should be understood that the disclosed devices and methods can also be implemented in other ways. The device embodiments described above are only illustrative. For example, the flow charts and structural diagrams in the accompanying drawings show the possible implementation architecture and functions of the devices, methods and computer program products according to multiple embodiments of the present application. and operations. In this regard, each block in the flowchart or block diagram may represent a module, segment, or portion of code that contains one or more executable functions for implementing the specified logical function instruction. It should also be noted that, in alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two consecutive blocks may actually execute substantially in parallel, or they may sometimes execute in the reverse order, depending on the functionality involved. It will also be noted that each block in the structure diagrams and/or flowchart illustrations, and combinations of blocks in the structure diagrams and/or flowchart illustrations, can be configured with specialized hardware-based systems that perform the specified functions or actions. to be implemented, or may be implemented using a combination of dedicated hardware and computer instructions.
另外，在本申请各个实施例中的各功能模块或单元可以集成在一起形成一个独立的部分，也可以是各个模块单独存在，也可以两个或更多个模块集成形成一个独立的部分。In addition, each functional module or unit in various embodiments of the present application can be integrated together to form an independent part, each module can exist alone, or two or more modules can be integrated to form an independent part.
功能如果以软件功能模块的形式实现并作为独立的产品销售或使用时，可以存储在一个计算机可读取存储介质中。基于这样的理解，本申请的技术方案本质上或者说对现有技术做出贡献的部分或者该技术方案的部分可以以软件产品的形式体现出来，该计算机软件产品存储在一个存储介质中，包括若干指令用以使得一台计算机设备(可以是智能手机、个人计算机、服务器、或者网络设备等)执行本申请各个实施例方法的全部或部分步骤。而前述的存储介质包括：U盘、移动硬盘、只读存储器(ROM，Read-Only Memory)、随机存取存储器(RAM，Random Access Memory)、磁碟或者光盘等各种可以存储程序代码的介质。If functions are implemented in the form of software function modules and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present application is essentially or the part that contributes to the existing technology or the part of the technical solution can be embodied in the form of a software product. The computer software product is stored in a storage medium, including Several instructions are used to cause a computer device (which can be a smart phone, a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods of various embodiments of the present application. The aforementioned storage media include: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), magnetic disk or optical disk and other media that can store program code. .
以上，仅为本申请的具体实施方式，但本申请的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本申请的保护范围之内。The above are only specific embodiments of the present application, but the protection scope of the present application is not limited thereto. Any person familiar with the technical field can easily think of changes or replacements within the technical scope disclosed in the present application, and all of them should be covered. within the protection scope of this application.

Claims (13)

  1. 一种温度分布图库建立方法，包括：A method for establishing a temperature distribution library, including:
    通过温度试验获取晶圆的表面温度分布情况；Obtain the surface temperature distribution of the wafer through temperature tests;
    根据设置的多组仿真参数进行晶圆仿真分析以确定使仿真结果与温度试验结果契合的至少一组候选仿真参数；Perform wafer simulation analysis based on the set multiple sets of simulation parameters to determine at least one set of candidate simulation parameters that make the simulation results consistent with the temperature test results;
    改变所述温度试验的边界条件再次进行温度试验，将所述至少一组候选仿真参数带入改变后的边界条件再次进行仿真分析，以确定一组使仿真结果与温度试验结果契合的契合仿真参数；Change the boundary conditions of the temperature test and conduct the temperature test again, and bring the at least one set of candidate simulation parameters into the changed boundary conditions and conduct simulation analysis again to determine a set of suitable simulation parameters that make the simulation results consistent with the temperature test results. ;
    基于所述契合仿真参数得到不同边界条件下所述晶圆的表面温度分布情况，以建立得到温度分布图库。Based on the fitted simulation parameters, the surface temperature distribution of the wafer under different boundary conditions is obtained to establish a temperature distribution library.
  2. 根据权利要求1所述的温度分布图库的建立方法，其中，所述通过温度试验获取晶圆的表面温度分布情况，包括：The method for establishing a temperature distribution library according to claim 1, wherein the obtaining the surface temperature distribution of the wafer through a temperature test includes:
    在晶圆的表面设置多个测温陶瓷环；Set multiple temperature measuring ceramic rings on the surface of the wafer;
    根据所述测温陶瓷环的变形量确定对应的温度；Determine the corresponding temperature according to the deformation amount of the temperature measuring ceramic ring;
    基于各个所述温度和对应的测温陶瓷环的位置确定所述晶圆的表面温度分布情况。The surface temperature distribution of the wafer is determined based on each temperature and the position of the corresponding temperature measuring ceramic ring.
  3. 根据权利要求1或2所述的温度分布图库的建立方法，其中，所述根据设置的多组仿真参数进行晶圆仿真分析以确定使仿真结果与温度试验结果契合的至少一组候选仿真参数，包括：The method for establishing a temperature distribution library according to claim 1 or 2, wherein the wafer simulation analysis is performed according to the set multiple sets of simulation parameters to determine at least one set of candidate simulation parameters that make the simulation results consistent with the temperature test results, include:
    基于设置的多组仿真参数进行流固热耦合物理场的仿真分析，得到多个仿真结果；Based on the set multiple sets of simulation parameters, simulation analysis of the fluid-solid-thermal coupling physical field was performed, and multiple simulation results were obtained;
    当所述仿真结果与温度试验结果的差值在预设范围内时，确定所述仿真结果对应的仿真参数为候选仿真参数。When the difference between the simulation result and the temperature test result is within a preset range, the simulation parameter corresponding to the simulation result is determined to be a candidate simulation parameter.
  4. 根据权利要求1至3任一项所述的温度分布图库的建立方法，其中，所述将所述至少一组候选仿真参数带入改变后的边界条件再次进行仿真分析，包括：The method for establishing a temperature distribution library according to any one of claims 1 to 3, wherein said bringing the at least one set of candidate simulation parameters into the changed boundary conditions and performing simulation analysis again includes:
    将所述至少一组候选仿真参数带入改变后的边界条件再次进行仿真分析，得到至少一个仿真结果；Bring the at least one set of candidate simulation parameters into the changed boundary conditions and perform simulation analysis again to obtain at least one simulation result;
    将所述改变后的边界条件下的温度试验结果与对应的至少一个仿真结果进行对比。Compare the temperature test results under the changed boundary conditions with at least one corresponding simulation result.
  5. 根据权利要求1至4任一项所述的温度分布图库的建立方法，其中，在所述改变所述温度试验的边界条件再次进行温度试验，将所述至少一组候选仿真参数带入改变后的边界条件再次进行仿真分析之后，还包括：The method for establishing a temperature distribution library according to any one of claims 1 to 4, wherein the temperature test is performed again after changing the boundary conditions of the temperature test, and the at least one set of candidate simulation parameters is brought into the changed After conducting simulation analysis again, the boundary conditions also include:
    若所述温度试验结果与所述改变所述温度试验的边界条件下的多个候选仿真 结果契合，则再次改变边界条件，并在所述再次改变边界条件下进行温度试验，直至确定相同边界条件下有唯一一个候选仿真结果与温度试验结果契合；If the temperature test results are consistent with the multiple candidate simulation results under changing the boundary conditions of the temperature test, then change the boundary conditions again, and conduct the temperature test under the changed boundary conditions again until the same boundary conditions are determined. There is only one candidate below whose simulation results are consistent with the temperature test results;
    将所述唯一一个候选仿真结果确定为所述契合仿真参数。The only candidate simulation result is determined as the fitting simulation parameter.
  6. 根据权利要求1至5任一项所述的温度分布图库的建立方法，其中，所述基于所述契合仿真参数得到不同边界条件下所述晶圆的表面温度分布情况，包括：The method for establishing a temperature distribution library according to any one of claims 1 to 5, wherein the obtaining the surface temperature distribution of the wafer under different boundary conditions based on the fitting simulation parameters includes:
    通过所述契合仿真参数和不同边界条件对应的表面温度分布情况确定对应的至少一个表面温度分布云图；Determine corresponding at least one surface temperature distribution cloud diagram through the surface temperature distribution corresponding to the simulation parameters and different boundary conditions;
    将所述不同边界条件和所述表面温度分布云图一一对应进行存储；Store the different boundary conditions and the surface temperature distribution cloud image in one-to-one correspondence;
    基于所述至少一个表面温度分布云图，建立得到温度分布图库。Based on the at least one surface temperature distribution cloud image, a temperature distribution library is established.
  7. 根据权利要求1至6任一项所述的温度分布图库的建立方法，其中，所述仿真参数包括高温反应室内石墨和绝热材料的参数、反应气体的参数、反应室内部压强信息和保持内外压力差的石英材料的参数中至少一种。The method for establishing a temperature distribution library according to any one of claims 1 to 6, wherein the simulation parameters include parameters of graphite and insulation materials in the high-temperature reaction chamber, parameters of reaction gases, internal pressure information of the reaction chamber and maintaining internal and external pressure Poor quartz material in at least one of its parameters.
  8. 根据权利要求1至7任一项所述的温度分布图库的建立方法，其中，所述边界条件包括石墨部件的发热功率、反应气体流量、红外测温点温度、设备换热量、以及晶圆旋转的转速中的至少一种。The method for establishing a temperature distribution library according to any one of claims 1 to 7, wherein the boundary conditions include the heating power of the graphite component, the flow rate of the reaction gas, the temperature of the infrared temperature measurement point, the heat transfer amount of the equipment, and the wafer At least one of the rotational speeds.
  9. 根据权利要求1至8任一项所述的温度分布图库的建立方法，其中，所述仿真结果包括所述仿真参数对应的晶圆的表面温度分布情况。The method for establishing a temperature distribution library according to any one of claims 1 to 8, wherein the simulation results include the surface temperature distribution of the wafer corresponding to the simulation parameters.
  10. 一种晶圆表面温度的获取方法，其中，包括：A method for obtaining wafer surface temperature, which includes:
    输入目标晶圆的工艺配方；Enter the process recipe of the target wafer;
    根据所述工艺配方对应的边界条件从采用权利要求1-9中任意一项所述的方法得到的温度分布图库中确定所述目标晶圆的表面温度分布云图。According to the boundary conditions corresponding to the process recipe, the surface temperature distribution cloud diagram of the target wafer is determined from the temperature distribution library obtained by using the method described in any one of claims 1 to 9.
  11. 一种温度分布图库的建立装置，其中，所述装置包括：A device for establishing a temperature distribution library, wherein the device includes:
    表面温度获取模块，用于通过温度试验获取晶圆的表面温度分布情况；Surface temperature acquisition module, used to obtain the surface temperature distribution of the wafer through temperature tests;
    候选仿真参数获取模块，用于根据设置的多组仿真参数进行晶圆仿真分析以确定使仿真结果与温度试验结果契合的至少一组候选仿真参数；A candidate simulation parameter acquisition module is used to perform wafer simulation analysis based on the set multiple sets of simulation parameters to determine at least one set of candidate simulation parameters that make the simulation results consistent with the temperature test results;
    契合仿真参数确定模块，用于改变所述温度试验的边界条件再次进行温度试验，将所述至少一组候选仿真参数带入改变后的边界条件再次进行仿真分析，以确定一组使仿真结果与温度试验结果契合的契合仿真参数；The consistent simulation parameter determination module is used to change the boundary conditions of the temperature test and conduct the temperature test again, and bring the at least one set of candidate simulation parameters into the changed boundary conditions to conduct simulation analysis again to determine a set of parameters that make the simulation results consistent with The temperature test results agree with the simulation parameters;
    温度分布图库建立模块，用于基于所述契合仿真参数得到不同边界条件下所述晶圆的表面温度分布情况，以建立得到温度分布图库。A temperature distribution library creation module is used to obtain the surface temperature distribution of the wafer under different boundary conditions based on the fitting simulation parameters, so as to establish a temperature distribution library.
  12. 一种终端设备，其中，包括存储器和处理器，所述存储器存储有计算机程序，所述计算机程序在所述处理器上运行时执行权利要求1至9任一项所述的温度分布图库的建立方法或权利要求10所述的晶圆表面温度的获取方法。A terminal device, which includes a memory and a processor. The memory stores a computer program. When the computer program is run on the processor, the computer program executes the establishment of the temperature distribution library according to any one of claims 1 to 9. The method or the method for obtaining the wafer surface temperature according to claim 10.
  13. 一种可读存储介质，其中，其存储有计算机程序，所述计算机程序在处理器上运行时执行权利要求1至9任一项所述的温度分布图库的建立方法或权利 要求10所述的晶圆表面温度的获取方法。A readable storage medium, wherein a computer program is stored therein, and when the computer program is run on a processor, the method for establishing a temperature distribution library according to any one of claims 1 to 9 or the method according to claim 10 is executed. How to obtain wafer surface temperature.
PCT/CN2022/136250 2022-06-29 2022-12-02 Method for establishing temperature distribution map library and method for acquiring wafer surface temperature WO2024001047A1 (en)

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