WO2023284880A1 - 激光器和激光投影设备 - Google Patents
激光器和激光投影设备 Download PDFInfo
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- WO2023284880A1 WO2023284880A1 PCT/CN2022/106133 CN2022106133W WO2023284880A1 WO 2023284880 A1 WO2023284880 A1 WO 2023284880A1 CN 2022106133 W CN2022106133 W CN 2022106133W WO 2023284880 A1 WO2023284880 A1 WO 2023284880A1
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- light
- frame
- laser
- bottom plate
- emitting chips
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02253—Out-coupling of light using lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02315—Support members, e.g. bases or carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
Definitions
- the present disclosure relates to the field of projection technology, in particular to a laser and laser projection equipment.
- MCL Multi Chip Laser Diode
- MCL lasers have the characteristics of long life, high brightness, and high power.
- the same MCL laser can package light-emitting chips that emit different colors of light, so that one MCL laser can realize the functions of multiple monochromatic lasers.
- some embodiments of the present disclosure provide a laser.
- the laser includes a bottom plate, a frame, a plurality of light emitting chips and a first conductive layer.
- the frame is located on the base plate.
- the plurality of light-emitting chips are located on the base plate and surrounded by the frame, and are configured to emit laser light.
- the first conductive layer is disposed at a position where the bottom plate corresponds to the frame, is connected to the light-emitting chip, and is configured to deliver current to the light-emitting chip.
- the laser projection device includes a light source, an optical machine and a lens.
- the light source includes a laser as described above, configured to emit an illumination beam to the light machine.
- the optical machine is configured to modulate the illumination beam emitted by the light source to obtain a projection beam.
- the lens is configured to image the projection beam.
- FIG. 1 is a structural diagram of a laser according to some embodiments
- Fig. 2 is the cross-sectional view of the laser shown in Fig. 1 along AA';
- Figure 3 is a block diagram of another laser according to some embodiments.
- Fig. 4 is a kind of sectional view along BB ' of the laser shown in Fig. 3;
- Fig. 5 is a kind of sectional view along CC ' of the laser shown in Fig. 3;
- Fig. 6 is another kind of cross-sectional view of the laser shown in Fig. 3 along BB';
- Figure 7 is another cross-sectional view of the laser shown in Figure 3 along CC';
- FIG. 8 is a structural diagram of another laser according to some embodiments.
- FIG. 9 is a structural diagram of a reflective slope of a frame according to some embodiments.
- FIG. 11 is a structural diagram of another laser according to some embodiments.
- Figure 12 is a top view of another laser according to some embodiments.
- FIG. 13 is a structural diagram of yet another laser according to some embodiments.
- Figure 14 is a block diagram of a backplane in a laser according to some embodiments.
- Fig. 15 is a structural diagram of a connection relationship between a base plate and a light-emitting chip according to some embodiments.
- Figure 16 is a structural diagram of yet another laser according to some embodiments.
- Figure 17 is a structural diagram of another laser according to some embodiments.
- Figure 18 is a block diagram of a substrate in a laser according to some embodiments.
- Figure 21 is another cross-sectional structure diagram of a laser according to some embodiments.
- Fig. 22 is another cross-sectional structure diagram of a laser according to some embodiments.
- Figure 24 is a plan view of a laser according to some embodiments.
- Figure 25 is another plan view of a laser according to some embodiments.
- Figure 26 is another plan view of a laser according to some embodiments.
- Figure 28 is yet another cross-sectional structure diagram of a laser according to some embodiments.
- Fig. 29 is a structural diagram of a laser projection device according to some embodiments.
- first and second are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, a feature defined as “first” and “second” may explicitly or implicitly include one or more of these features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality” means two or more.
- the expressions “coupled” and “connected” and their derivatives may be used.
- the term “connected” may be used in describing some embodiments to indicate that two or more elements are in direct physical or electrical contact with each other.
- the term “coupled” may be used when describing some embodiments to indicate that two or more elements are in direct physical or electrical contact.
- the terms “coupled” or “communicatively coupled” may also mean that two or more elements are not in direct contact with each other, but yet still co-operate or interact with each other.
- the embodiments disclosed herein are not necessarily limited by the context herein.
- the laser projection device 1 includes a casing 11 (only a part of the casing is shown in FIG. 29 ), a light source 10 assembled in the casing 11, an optical machine 20, and lens 30.
- the light source 10 is configured to provide an illumination beam (laser beam).
- the optical machine 20 is configured to use an image signal to modulate the illumination beam provided by the light source 10 to obtain a projection beam.
- the lens 30 is configured to project the projection beam onto a projection screen or a wall for imaging.
- the light source 10 includes at least one laser 100 configured to emit laser light.
- the laser 100 includes a package 110 and a plurality of light-emitting chips 120 packaged in the package 110 and arranged in an array.
- a plurality of light emitting chips 120 are arranged in a row; or, as shown in FIG. 3, a plurality of light emitting chips 120 are arranged in two rows; or, as shown in FIG. 10, a plurality of light emitting chips 120 are arranged in two rows; or, as shown in FIG. 12 , a plurality of light emitting chips 120 are arranged in six rows; or, as shown in FIGS. 24 to 26 , a plurality of light emitting chips 120 are arranged in four rows.
- the light-emitting chips 120 can be classified into red light-emitting chips, green light-emitting chips or blue light-emitting chips according to the color of the emitted laser light.
- the plurality of light emitting chips 120 include at least one of the above three types of light emitting chips, that is, the plurality of light emitting chips 120 may only include red light emitting chips, or may only include red light emitting chips and green light emitting chips, or may also include red light emitting chips, green light emitting chips, and green light emitting chips. Light emitting chips and blue light emitting chips.
- the light emitting chip 120 generates more heat during the process of emitting laser light. If the heat cannot be dissipated in time, as the temperature of the light-emitting chip 120 increases, its threshold current will increase, and the photoelectric conversion efficiency will decrease, thereby affecting the service life of the light-emitting chip 120, and even directly causing damage to the light-emitting chip 120.
- the laser 100 works for a long time, it is easy to cause catastrophic optical damage (Catastrophic optical damage, COD) of the light-emitting chip. Therefore, timely dissipation of the heat emitted by the light-emitting chip 120 is crucial to the reliability of the laser 100 . At present, as the volume of the laser 100 becomes smaller and smaller, more light-emitting chips 120 need to be installed in the smaller laser 100 , and the requirements for the heat dissipation effect generated by the light-emitting chips 120 are higher.
- the tube case 110 includes a bottom plate 111 and at least one annular frame 112 on the bottom plate 111 . At least one frame 112 and the base plate 111 enclose an accommodating space, and a plurality of light-emitting chips 120 are disposed on the base plate 111 and located in the accommodating space.
- Thermal resistance R represents the ability of a material per unit area and unit thickness to prevent heat flow.
- R L/(K*A), where A represents the heat conduction area in square meters (that is, m 2 ); L represents the length of the heat conduction path in meters (that is, m); K represents the thermal conductivity of the heat conduction object .
- Thermal conductivity K d/R, where d represents the thickness of the material.
- the thermal resistance R is proportional to the thickness d. Even for non-single materials, the general trend is that the thermal resistance of the material increases with the thickness of the material.
- the light-emitting chip is arranged in a packaging structure, and the bottom of the packaging structure is welded to the bottom plate by solder.
- the heat generated by the light-emitting chip needs to be dissipated to the outside through the bottom of the packaging structure, the solder, and the bottom plate.
- the heat dissipating path is long, the thermal resistance is large, and the dissipating efficiency is low. Since the thermal conductivity of solder is generally low, eg, only 50-60 watts per degree (W/mK), the effect of dissipating heat through the solder is poor. Moreover, air bubbles or cavities may be generated during the solder welding process, which will hinder heat dissipation and further reduce heat dissipation efficiency.
- the light emitting chip 120 is disposed on the base plate 111 , and the heat generated by the light emitting chip 120 is dissipated to the outside through the base plate 111 .
- the laser provided by some embodiments of the present disclosure reduces the objects that need to pass through when the heat is dissipated to the outside world.
- the heat conduction path is shortened, thereby improving the heat dissipation efficiency, reducing the risk of damage to the light-emitting chip 120 caused by heat accumulation, and improving the reliability of the laser 100 .
- the laser 100 further includes at least one first conductive layer 113 .
- the at least one first conductive layer 113 is disposed on the bottom plate 111 and located on a side of the outermost light-emitting chip 120 away from the adjacent light-emitting chip 120 .
- the present disclosure does not limit the number of the first conductive layer 113 , which may be one or more.
- the number of first conductive layers 113 is twice the number of rows of light emitting chips 120 .
- a plurality of light emitting chips 120 are arranged in two rows along the Y direction, and the laser 100 includes four first conductive layers 113 .
- the two outermost light-emitting chips 120 in the first row of light-emitting chips 120 are respectively called the first light-emitting chip 121 and the second light-emitting chip 122, and the outermost two light-emitting chips 120 in the second row are called
- the two light emitting chips 120 are respectively referred to as a third light emitting chip 123 and a fourth light emitting chip 124 .
- a first conductive layer 113 is located on a side of the first light-emitting chip 121 away from its adjacent light-emitting chip 120, a first conductive layer 113 is located on a side of the second light-emitting chip 122 away from its adjacent light-emitting chip 120, and a first light-emitting chip 122 is located on a side away from its adjacent light-emitting chip 120.
- a conductive layer 113 is located on a side of the third light-emitting chip 123 away from its adjacent light-emitting chip 120 , and a first conductive layer 113 is located on a side of the fourth light-emitting chip 124 away from its adjacent light-emitting chip 120 .
- the first conductive layer 113 is connected to the corresponding light-emitting chip 120, and the first conductive layer 113 supplies current to the light-emitting chip 120, and then the light-emitting chip 120 can emit laser light under the action of the current.
- the conductive layer described in some embodiments of the present disclosure is not a whole-layer structure that completely covers the bottom plate 111 , but a sheet-like structure with a smaller area and a thinner thickness.
- a conductive block may also be disposed on the bottom plate 111 , and the conductive block is connected to the first conductive layer 113 through a circuit inside the bottom plate 111 .
- An external power source is connected to the conductive block, and the current is transmitted to the first conductive layer 113 through the conductive block, and then to the light-emitting chip 120 connected to the first conductive layer 113 .
- the conductive block can be disposed on the edge area of the bottom board 111 , or other positions on the bottom board 111 that are convenient for connecting external circuits.
- the frame 112 is in the shape of a square ring as an example for illustration.
- the frame 112 may also be in other ring shapes, such as a ring shape or a pentagonal ring shape, which is not limited in some embodiments of the present disclosure.
- the laser 100 further includes at least one step 114 disposed on the inner wall of the frame 112 .
- the laser 100 includes a step 114 disposed on the inner wall of the frame 112 .
- the step 114 is annular and surrounds the entire inner wall of the frame 112 .
- the laser 100 includes a plurality of independent steps 114 , and the plurality of steps 114 are arranged at intervals on the inner wall of the frame 112 .
- the laser 100 includes two steps 114 , and the two steps 114 are respectively arranged on two opposite inner walls of the frame 112 .
- the laser 100 includes a second conductive layer 115 disposed on the surface of the step 114 away from the bottom plate 111 .
- the laser 100 includes a plurality of second conductive layers 115 .
- a plurality of second conductive layers 115 are arranged at intervals on the surface of the step 114 away from the bottom plate 111; when the laser 100 includes a plurality of steps 114, each second conductive layer 115 is arranged The surface of the corresponding step 114 is away from the bottom plate 111 .
- the location of the second conductive layer 115 is related to the circuit connection method of the light emitting chip 120 .
- the two light-emitting chips 120 respectively connected to the two second conductive layers 115 are the outermost two light-emitting chips 120 , which are respectively close to the two opposite inner walls of the frame 112 .
- the second conductive layer 115 is oppositely disposed. If the two light-emitting chips 120 respectively connected to the two second conductive layers 115 are two adjacent light-emitting chips 120 , both of which are close to an inner wall of the frame 112 , the two second conductive layers 115 are arranged at intervals.
- the laser 100 further includes at least one third conductive layer, and the at least one third conductive layer is disposed on the surface of the frame 112 close to the bottom plate 111 .
- the position of the third conductive layer corresponds to the position of the first conductive layer 113 and is connected to the corresponding first conductive layer 113 .
- the present disclosure does not limit the quantity of the third conductive layer, which may be one or more.
- the number of the third conductive layers corresponds to the number of the first conductive layers 113 one to one.
- the area of the third conductive layer is smaller than that of the corresponding first conductive layer 113 , and the third conductive layer is soldered to the corresponding first conductive layer 113 by conductive solder (such as gold-tin solder).
- conductive solder such as gold-tin solder.
- Both ends of the conductive part 116 are respectively electrically connected to the corresponding third conductive layer and the second conductive layer 115, so that the light-emitting chip 120 arranged on the bottom plate 111 is connected to the second conductive layer 115 through a wire, and then the light-emitting chip 120 can pass through the conductive part.
- 116 and the third conductive layer are connected to the first conductive layer 113 on the base plate 111 , so as to realize the connection between the light emitting chip 120 and the external power supply.
- multiple light-emitting chips 120 in the laser 100 can be arranged in one or more rows, each row of light-emitting chips 120 can be connected in series, and the color of the laser light emitted by each row of light-emitting chips 120 can be the same.
- the two outermost light-emitting chips 120 in each row of light-emitting chips 120 are respectively connected to the adjacent second conductive layer 115, one second conductive layer 115 is connected to the positive electrode of the power supply through the corresponding first conductive layer 113, and the other second conductive layer 115 The layer 115 is connected to the negative pole of the power supply through the corresponding first conductive layer 113 . In this way, each row of light-emitting chips 120 can be connected to the positive pole and the negative pole of the power supply, and then can receive the current delivered by the power supply.
- the material of the frame 112 in the laser 100 includes ceramics, for example, the material of the frame 112 may be aluminum oxide and/or silicon nitride ceramic materials. Since aluminum oxide or silicon nitride ceramic materials have relatively high hardness and large thermal conductivity, they can not only protect the light-emitting chip 120 arranged in the frame 112, but also quickly reduce the heat produced by the light-emitting chip 120 when emitting light. The heat is exported, improving the performance of the laser 100 .
- the frame 112 may also be made of other ceramic materials with relatively high hardness and good thermal conductivity, which is not limited in this embodiment of the present disclosure.
- the laser 100 provided in the embodiment of the present disclosure is a ceramic packaged laser, and the current is input through the first conductive layer 113 on the base plate 111, without the need for
- the conductive pins are arranged on the frame 112 , the structure of the laser 100 is simple, and it is more conducive to the airtightness of the accommodating space of the laser 100 , and the packaged laser 100 is firm and reliable, and the risk of damage is low.
- the material of the bottom plate 111 includes metal, and the thickness of the bottom plate 111 may range from 1 mm to 2 mm.
- the material of the bottom plate 111 includes copper, such as oxygen-free copper.
- Oxygen-free copper refers to a copper material with an oxygen content of not more than 0.003%, a total impurity content of not more than 0.05%, a copper purity of more than 99.95%, and a thermal conductivity of 401W/mK.
- the material of the bottom plate 111 includes one or more of aluminum, aluminum nitride and silicon carbide.
- the heat generated by the light-emitting chip 120 needs to be dissipated through the bottom plate 111, and the thermal conductivity of copper is as high as 400 watts per meter degree (W/mK). Heat dissipates more quickly.
- the material of the bottom plate 111 includes ceramics. Because ceramic materials have good insulation and higher thermal conductivity, and are more resistant to high temperature and corrosion, the use of ceramic materials to make the base plate 111 in the laser 100 can help the heat generated by the light-emitting chip 120 to dissipate faster, ensuring that the laser 100 reliability.
- the laser 100 further includes a plurality of heat sinks 130 .
- a plurality of heat sinks 130 are disposed on the bottom plate 111 , each light emitting chip 120 is located on the corresponding heat sink 130 , and the heat sink 130 is configured to assist the corresponding light emitting chip 120 to dissipate heat.
- a plurality of heat sinks 130 corresponds to a plurality of light emitting chips 120 one by one.
- the light emitting chip 120 is fixed on the heat sink 130 by welding or pasting.
- the light-emitting chip 120 and the heat sink 130 are welded by a high-precision eutectic welding machine to form a chip assembly, also called a Cos (Chip on submount, Cos for short) assembly.
- the heat sink 130 is provided between the light-emitting chip 120 and the bottom plate 111. Since the heat sink 130 has a larger thermal conductivity, the heat generated when the light-emitting chip 120 emits light can be quickly exported to prevent the heat from affecting the light. Damage to chip 120 .
- the material of the heat sink 130 may include metal, aluminum nitride, silicon carbide or a ceramic material with relatively large thermal conductivity.
- the size of the heat sink 130 in the X direction is larger than the size of the light emitting chip 120 in the X direction
- the size of the heat sink 130 in the Y direction is larger than the size of the light emitting chip 120 in the Y direction
- the thickness of the heat sink 130 is 0.1-0.3mm, such as 0.2mm.
- the light-emitting chip 120 and the heat sink 130 can be fixed in such a way that the entire bottom surface of the light-emitting chip 120 is fixed on the surface of the heat sink 130 away from the bottom plate 111, or the bottom surface of the light-emitting chip 120 away from the light outlet is fixed on the heat sink 130 away from the bottom plate 111. on the surface.
- the contact area between the light-emitting chip 120 and the heat sink 130 is larger, thereby increasing the area of the light-emitting chip 120 supported by the heat sink 130 , improving the setting stability of the light emitting chip 120 .
- the bottom surface of the light-emitting chip 120 away from the light outlet is fixed on the surface of the heat sink 130 away from the bottom plate 111, since the bottom surface of the light-emitting chip 120 is not in contact with any object, the heat generated when the light-emitting chip 120 emits light can be quickly dissipated. The heat dissipation effect of the light emitting chip 120 is improved.
- the laser 100 further includes a light-transmitting sealing layer 150 and a collimating lens group 160 .
- the light-transmitting sealing layer 150 is configured to seal the accommodating space enclosed by the base plate 111 and the frame 112 .
- the bottom plate 111, the frame 112 and the light-transmitting sealing layer 150 form a closed space, and a plurality of light-emitting chips 120 are arranged in the closed space, which can prevent the light-emitting chips 120 from being corroded by oxygen in the outside air and prolong the service life of the light-emitting chips 120 .
- the edge of the light-transmitting sealing layer 150 is directly fixed to the surface of the frame 112 away from the bottom plate 111 to seal the accommodating space.
- the material of the light-transmitting sealing layer 150 is a light-transmitting material, including glass or resin material.
- the light-transmitting sealing layer 150 is a sapphire cover plate, which not only has good light transmittance, but also has good thermal conductivity and mechanical properties.
- the material of the light-transmitting sealing layer 150 can also be selected according to the light-emitting characteristics of the light-emitting chip 120 .
- the material of the light-transmitting sealing layer 150 can be selected from a material that is more transparent to red laser light.
- the collimating lens group 160 includes a plurality of collimating lenses configured to collimate the incident laser light.
- the plurality of collimating lenses are integrally formed.
- the side of the collimating lens group 160 away from the bottom plate 111 has a plurality of convex arc surfaces, and the part where each convex arc surface is located serves as a collimating lens.
- the collimation of the light is to adjust the divergence angle of the light so that the light is adjusted as close as possible to parallel light.
- the laser light emitted by the light-emitting chip 120 can be reflected by the corresponding reflective prism 140 to the light-transmitting sealing layer 150, and then the light-transmitting sealing layer 150 can transmit the laser light to the collimating lens corresponding to the light-emitting chip 120 in the collimating lens group 160, After being collimated by the collimating lens, the laser 100 emits light.
- a plurality of collimating lenses corresponds to a plurality of light emitting chips 120 one by one.
- the laser 100 includes a boss 117 .
- the boss 117 is disposed on the bottom plate 111 and surrounded by the frame 112 , and a plurality of light-emitting chips 120 are disposed on the surface of the boss 117 away from the bottom plate 111 .
- the laser 100 includes two bosses 117 .
- the two bosses 117 are both disposed on the bottom plate 111 , and each boss 117 is surrounded by a corresponding frame 112 .
- a plurality of light-emitting chips 120 are arranged in two rows, and each row of light-emitting chips 120 is disposed on a surface of a corresponding boss 117 away from the bottom plate 111 .
- each boss 117 is the same, and the number of light-emitting chips 120 disposed on each boss 117 is equal.
- each boss 117 is provided with 7 light-emitting chips 120 arranged in a row.
- the size of each boss 117 may also be different, the number of light-emitting chips 120 disposed on each boss 117 may also be different, and the arrangement of the light-emitting chips 120 may also be different.
- each boss 117 is provided with The first conductive layer 113, that is, each boss 117 is located between two first conductive layers 113, and the first conductive layer 113 is arranged on the area outside the boss 117 in the bottom plate 111, that is, the non-bump in the bottom plate 111 area.
- the two outermost light-emitting chips 120 on the boss 117 are respectively connected to the two first conductive layers 113, and the positive pole and negative pole of the external power supply are respectively connected to the two first conductive layers 113, so as to realize the light-emitting chips 120 in this row.
- Input Current is respectively connected to the two first conductive layers 113, so as to realize the light-emitting chips 120 in this row.
- each boss 117 is fixed to the inner wall of the corresponding frame 112 , so that the frame 112 is fixed on the bottom plate 111 .
- the side of each boss 117 is welded with the inner wall of the corresponding frame 112 by solder.
- the boss 117 may be a rectangular boss, and the surface of the boss 117 used for setting the light-emitting chip 120 is called the top surface of the boss 117, and the other faces of the boss 117 connected to the top surface are It is the side of the boss 117.
- the third conductive layer on the surface of the frame 112 close to the bottom plate 111 can be aligned with the first conductive layer 113 on the bottom plate 111, and then the frame 112 is set on the corresponding boss 117 the periphery.
- the bottom plate 111 has at least one groove 118 .
- a corresponding frame 112 is disposed in at least one groove 118 , and a plurality of light-emitting chips 120 are located in an accommodating space formed by the frame 112 and the groove 118 .
- the frame 112 can be a square ring structure.
- the frame 112 has four inner walls, and the four inner walls of the frame 112 can be set as reflective slopes, or part of the four inner walls of the frame 112 The inner wall is set as a reflective slope.
- the surface of the bottom plate 111 provided with the light-emitting chips 120 is a horizontal plane, and a reflective slope in the frame 112 corresponds to multiple columns or rows of the light-emitting chips 120 .
- a reflective slope in the frame 112 corresponds to multiple columns or rows of the light-emitting chips 120 .
- multiple columns or rows of light-emitting chips 120 corresponding to the same reflective slope of the frame 112 may be staggered, that is, no other light-emitting chips 120 are disposed between each light-emitting chip 120 and the corresponding reflective slope.
- the number of light-emitting chips 120 in the laser 100 of the embodiment of the present disclosure is not limited to 6, and can be 15, 20 or more. The embodiment does not limit this.
- the distance N shown in FIG. 13 is the distance between one light-emitting chip 120 of the plurality of light-emitting chips 120 and the light-transmitting sealing layer 150
- the distance M is the distance between one light-emitting chip 120 of the plurality of light-emitting chips 120 and the frame 112. The distance between the corresponding inner walls.
- the height of the substrate 170 refers to the height of the substrate 170 in a direction perpendicular to the bottom plate 111 . Only 6 substrates are shown in FIG. 17 , but the number of substrates 170 in the laser 100 of the embodiment of the present disclosure is not limited to 6, and can be 3, 4 or 8, which is not limited in the embodiment of the present disclosure.
- the height difference between two adjacent substrates 170 where the light-emitting chips 120 corresponding to the same reflective slope of the frame 112 are located is not less than the thickness of the light-emitting chips 120, so that the light outlets of the two adjacent columns of light-emitting chips facing the same direction In 120, the laser light generated by a row of light-emitting chips 120 that is far away from the reflective slope of the frame 112 is not blocked by a row of light-emitting chips 120 that is relatively close to the reflective slope of the frame 112, thereby ensuring that the laser light emitted by each row of light-emitting chips 120 is uniform. It can be incident on the corresponding reflective slope of the frame 112 , and be emitted from the light-transmitting sealing layer 150 after being reflected by the reflective slope of the frame 112 .
- each light emitting chip 120 is connected to a surface of one substrate 170 of the plurality of substrates 170 away from the bottom plate 111 through a corresponding heat sink 130 .
- the arrangement of the light-emitting chip 120 on the heat sink 130 and the arrangement of the heat sink 130 on the substrate 170 can refer to the above-mentioned arrangement of the light-emitting chip 120 on the heat sink 130 and the arrangement of the heat sink 130 on the bottom plate 111. This disclosure The embodiment will not be repeated here.
- each light-emitting chip 120 in the same column and the corresponding reflective slope of the frame 112 are equal, and in two adjacent columns of light-emitting chips 120 corresponding to the same reflective slope of the frame 112, any two light-emitting chips 120 and the light-transmitting slope
- the difference in the distance between the sealing layers 150 is not less than the thickness of the light emitting chip 120 . That is, among two adjacent columns of light-emitting chips 120 corresponding to the same reflective slope of the frame 112, the height of the row of light-emitting chips 120 farther from the reflective slope of the frame 112 in the Z-axis direction is higher than that of the frame 112.
- the reflective prism 140 is usually made of optical glass, and the bottom plate 111 is usually made of metal, when the reflective prism 140 is pasted on the bottom plate 111, it is necessary to plate the bottom surface of the reflective prism 140 with gold, and then attach the gold-plated surface to the bottom plate 111.
- it is necessary to ensure the contact size between the reflective prism 140 and the base plate 111 which requires increasing the size of the reflective prism 140, resulting in an increase in the gold-plated area, and it is also necessary to ensure uniform gold plating The difficulty and cost of the process are greatly increased.
- the laser 100 includes a plurality of reflective sheets 300 corresponding to the plurality of light emitting chips 120 and a plurality of support parts 400 corresponding to the plurality of reflective sheets 300 .
- a plurality of reflectors 300 are located inside the casing 110 , and one reflector 300 corresponds to at least one light emitting chip 120 .
- the reflective mirror 300 is located on the light-emitting side of the corresponding light-emitting chip 120 , and is used to receive the laser light emitted by the corresponding light-emitting chip 120 and reflect the laser light in a direction away from the base plate 111 .
- the inclination angle of the reflective mirror 300 can be flexibly controlled. Since the light-emitting chip 120 may have problems such as identification and mounting tolerances during mounting, the angle may be tilted. Compensation is achieved by adjusting the inclination angle of the reflecting mirror 300 .
- the adhesive layer 500 used for pasting the components in the laser 100 can be silver glue.
- the reflective lens 300 is usually made of optical glass, the glass surface cannot be directly bonded to the metal surface through silver glue, and the glass surface needs to be plated with gold to ensure good bonding strength. Therefore, in some disclosed embodiments, the contact surface of the reflector 300 and the support portion 400 and the surface of the reflector 300 facing the bottom plate 111 are all provided with a gold-plated layer G, and then the gold-plated layer G is passed through the silver glue and the support portion 400 made of metal. Or base plate 111 is pasted.
- the base plate 111 and the supporting part 400 can be manufactured separately, that is, they are independent, and then the supporting part 400 is pasted on the base plate 111 .
- the adhesive layer 500 is made of silver glue
- the supporting part 400 can be made of metal materials, for example, it can be made of metal copper and other materials, which is not limited here.
- the supporting part 400 made of metal can be directly attached to the bottom plate 111 through silver glue.
- Adhesive layer 500 is also used to paste between support portion 400 and reflective lens 300.
- Reflective lens 300 is provided with gold-plated layer G on at least part of the surface that coincides with inclined surface S2 of support portion 400, and then gold-plated layer G is passed through silver glue and supports. Part 400 is pasted.
- the bonding strength between the support portion 400 and the reflective lens 300 can fully support the stability requirements of the reflective lens 300, it is only necessary to perform gold plating on at least part of the surface of the reflective lens 300 facing the inclined surface S2 of the support portion for pasting.
- the gold-plated area is greatly reduced, thereby reducing the manufacturing difficulty of the reflective sheet 300 and reducing the production cost.
- the base plate 111 and the support part 400 can be manufactured separately, that is, they are independent, and then the support part 400 is pasted on the base plate 111 .
- the adhesive layer 500 is made of silver glue
- the supporting part 400 can be made of metal material.
- materials such as metal copper may be used for production, which is not limited herein.
- the supporting part 400 made of metal can be directly attached to the bottom plate 111 through silver glue.
- a plurality of light emitting chips 120 are arranged in an array, one reflective sheet 300 corresponds to one light emitting chip 120 , and one support portion 400 corresponds to one reflective sheet 300 .
- the supporting part 400 and the reflective sheet 300 are attached to each other.
- the height of the supporting part 400 is 0.6mm-1.2mm, and the width is 0.2mm-0.4mm; the height of the reflector is 1.4mm-1.5mm, and the width is 0.1mm-0.2mm.
- the width of the reflective mirror 300 is set according to the size of the light spot emitted by the light emitting chip 120 , and the width of the reflective mirror 300 is sufficient to receive the light spot emitted by the corresponding light emitting chip 120 .
- the width of the supporting portion 400 is greater than that of the reflective lens 300 , and is used to provide stable support for the reflective lens 300 .
- the height of the support part 400 is smaller than that of the reflector 300 , and the support 400 is used to support and fix the reflector 300 , so the height of the support 400 can be reduced so that the reflector 300 rests on the support 400 .
- the supporting portion 400 is a strip structure extending along the arrangement direction of a row of light-emitting chips 120; one reflective mirror 300 corresponds to one light-emitting chip 120, and one supporting portion 400 corresponds to a row of reflective mirrors 300.
- a row of light-emitting chips 120 with the same light emitting direction corresponds to a strip-shaped support portion 400 , and the support portion 400 and the reflective sheet 300 are pasted together.
- the height of the supporting part 400 is 0.6mm-1.2mm; the height of the reflector is 1.4mm-1.5mm, and the width is 0.1mm-0.2mm.
- the width of the reflective mirror 300 is set according to the size of the light spot emitted by the light emitting chip 120 , and the width of the reflective mirror 300 is sufficient to receive the light spot emitted by the corresponding light emitting chip 120 .
- the support part 400 is directly formed into a strip shape, pasted with the bottom plate 111 or integrated with the bottom plate 111, which can increase the stability of the support part 400, and at the same time simplify the structure of the support part 400 and improve manufacturability.
- the height of the support part 400 is smaller than that of the reflector 300 , and the support 400 is used to support and fix the reflector 300 , so the height of the support 400 can be reduced so that the reflector 300 rests on the support 400 .
- both the support portion 400 and the reflector 300 are strip structures extending along the arrangement direction of a row of light-emitting chips 120; one reflector 300 corresponds to a row of light-emitting chips 120, and one support The portion 400 corresponds to one reflective mirror 300 .
- a row of light-emitting chips 120 with the same light emitting direction corresponds to a strip-shaped support portion 400 and a strip-shaped reflective sheet 300 , and the reflective sheet 300 is attached to the support portion 400 .
- the height of the supporting part 400 is 0.6mm-1.2mm; the height of the reflector is 1.4mm-1.5mm.
- Both the reflective mirror 300 and the supporting portion 400 are arranged in a strip shape corresponding to a row of light emitting chips 120 , and the emitted light spots of the light emitting chips 120 will only be incident on the reflective mirror 300 located in the light emitting direction thereof.
- the support part 400 is directly formed into a strip shape, pasted with the bottom plate 111 or integrated with the bottom plate 111, which can increase the stability of the support part 400, and at the same time simplify the structure of the support part 400 and improve manufacturability.
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Abstract
一种激光器(100),包括底板(111)、框架(112)、多个发光芯片(120)和第一导电层(113),框架(112)位于底板(111)上,多个发光芯片(120)位于底板(111)上且被框架(112)包围,被配置为发出激光。第一导电层(113)设置在底板(111)与框架(112)对应的位置处,且与发光芯片(120)连接,被配置为向发光芯片(120)输送电流。
Description
本申请要求申请号为202122280817.7、2021年9月18日提交的中国专利申请、申请号为202110801882.1、2021年7月15日提交的中国专利申请、申请号为202111659813.8、2021年12月30日提交的中国专利申请的优先权,其全部内容通过引用结合在本申请中。
本公开涉及投影技术领域,尤其涉及一种激光器和激光投影设备。
随着激光投影设备向小型化、便携化以及多功能化方向发展,小型激光器(Multi Chip Laser Diode,简称MCL)由于其占用空间小而被广泛应用。MCL激光器具有寿命长、亮度高、高功率等特点,同一个MCL激光器内部可以封装发出不同颜色光的发光芯片,从而采用一个MCL激光器可实现多种单色激光器的功能。
发明内容
一方面,本公开一些实施例提供一种激光器。所述激光器包括底板、框架、多个发光芯片和第一导电层。所述框架位于所述底板上。所述多个发光芯片位于所述底板上且被所述框架包围,被配置为发出激光。所述第一导电层设置在所述底板与所述框架对应的位置处,且与发光芯片连接,被配置为向所述发光芯片输送电流。
另一方面,本公开一些实施例提供一种激光投影设备。所述激光投影设备包括光源,光机和镜头。所述光源包括如上所述的激光器,被配置为向所述光机发出照明光束。所述光机被配置为将所述光源发出的照明光束进行调制以获得投影光束。所述镜头被配置为将所述投影光束进行成像。
图1为根据一些实施例的一种激光器的结构图;
图2为图1所示的激光器沿AA’的截面图;
图3为根据一些实施例的另一种激光器的结构图;
图4为图3所示的激光器沿BB’的一种截面图;
图5为图3所示的激光器沿CC’的一种截面图;
图6为图3所示的激光器沿BB’的另一种截面图;
图7为图3所示的激光器沿CC’的另一种截面图;
图8为根据一些实施例的又一种激光器的结构图;
图9为根据一些实施例的框架的一个反射斜面的结构图;
图10为根据一些实施例的一种激光器的俯视图;
图11为根据一些实施例的又一种激光器的结构图;
图12为根据一些实施例的另一种激光器的俯视图;
图13为根据一些实施例的又一种激光器的结构图;
图14为根据一些实施例的激光器中的底板的结构图;
图15为根据一些实施例的一种底板与发光芯片的连接关系的结构图;
图16为根据一些实施例的又一种激光器的结构图;
图17为根据一些实施例的又一种激光器的结构图;
图18为根据一些实施例的激光器中的基板的结构图;
图19为根据一些实施例的激光器的立体图;
图20为根据一些实施例的激光器的一种截面结构图;
图21为根据一些实施例的激光器的另一种截面结构图;
图22为根据一些实施例的激光器的又一种截面结构图;
图23为根据一些实施例的激光器的又一种截面结构图;
图24为根据一些实施例的激光器的一种平面结构图;
图25为根据一些实施例的激光器的另一种平面结构图;
图26为根据一些实施例的激光器的又一种平面结构图;
图27为根据一些实施例的反射镜片的结构图;
图28为根据一些实施例的激光器的又一种截面结构图;
图29为根据一些实施例的一种激光投影设备的结构图。
下面将结合附图,对本公开一些实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本公开一部分实施例,而不是全部的实施例。基于本公开所提供的实施例,本领域普通技术人员所获得的所有其他实施例,都属于本公开保护的范围。
除非上下文另有要求,否则,在整个说明书和权利要求书中,术语“包括(comprise)”及其其他形式例如第三人称单数形式“包括(comprises)”和现在分词形式“包括(comprising)”被解释为开放、包含的意思,即为“包含,但不限于”。在说明书的描述中,术语“一个实施例(one embodiment)”、“一些实施例(some embodiments)”、“示例性实施例(exemplary embodiments)”、“示例(example)”、“特定示例(specific example)”或“一些示例(some examples)”等旨在表明与该实施例或示例相关的特定特征、结构、材料或特性包括在本公开的至少一个实施例或示例中。上述术语的示意性表示不一定是指同一实施例或示例。此外,所述的特定特征、结构、材料或特点可以以任何适当方式包括在任何一个或多个实施例或示例中。
以下,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本公开实施例的描述中,除非另有说明,“多个”的含义是两个或两个以上。
在描述一些实施例时,可能使用了“耦接”和“连接”及其衍伸的表达。例如,描述一些实施例时可能使用了术语“连接”以表明两个或两个以上部件彼此间有直接物理接触或电接触。又如,描述一些实施例时可能使用了术语“耦接”以表明两个或两个以上部件有直接物理接触或电接触。然而,术语“耦接”或“通信耦合(communicatively coupled)”也可能指两个或两个以上部件彼此间并无直接接触,但仍彼此协作或相互作用。这里所公开的实施例并不必然限制于本文内容。
本文中“适用于”或“被配置为”的使用意味着开放和包容性的语言,其不排除适用于或被配置为执行额外任务或步骤的设备。
如本文所使用的那样,“约”、“大致”或“近似”包括所阐述的值以及处于特定值的可接受偏差范围内的平均值,其中所述可接受偏差范围如由本领域普通技术人员考虑到正在讨论的测量以及与特定量的测量相关的误差(即,测量***的局限性)所确定。
本公开一些实施例提供一种激光投影设备,如图29所示,激光投影设备1包括壳体11(图29中仅示出部分壳体),装配于壳体11中的光源10,光机20,以及镜头30。该光源10被配置为提供照明光束(激光束)。该光机20被配置为利用图像信号对光源10提供的照明光束进行调制以获得投影光束。该镜头30被配置为将投影光束投射在投影屏幕或墙壁上成像。
光源10包括至少一个激光器100,至少一个激光器100被配置为发出激光。如图1所示,激光器100包括管壳110和封装在管壳110内阵列排布的多个发光芯片120。
示例地,如图1所示,多个发光芯片120排布成一行;或者,如图3所示,多个发光芯片120排布成两行;或者,如图10所示,多个发光芯片120排布成两列;或者,如图12所示,多个发光芯片120排布成六列;或者,如图24~图26所示,多个发光芯片120排布成四列。
发光芯片120根据其发出激光的颜色可分为红色发光芯片、绿色发光芯片或蓝色发光芯片。多个发光芯片120包括上述三种发光芯片中的至少一种,即多个发光芯片120可以仅包括红色发光芯片,也可以仅包括红色发光芯片和绿色发光芯片,还可以包括红色发光芯片,绿色发光芯片和蓝色发光芯片。
发光芯片120在发出激光的过程中产生较多的热量。若该热量无法及时散发,则随着 发光芯片120的温度增高,其阈值电流会增大,光电转换效率会下降,从而影响发光芯片120的使用寿命,甚至直接导致发光芯片120损坏。在激光器100长时间工作时,很容易引起发光芯片的光学灾变损伤(Catastrophic optical damage,COD)。因此,发光芯片120发出的热量的及时散发对激光器100的可靠性至关重要。目前随着激光器100的体积越来越小,需在该较小的激光器100中设置较多的发光芯片120,对发光芯片120产生的热量的散发效果的要求更高。
如图1和图3所示,管壳110包括底板111,以及位于底板111上的至少一个环状的框架112。至少一个框架112与底板111围出容置空间,多个发光芯片120设置在底板111上,且位于该容置空间中。
示例地,如图1所示,管壳110包括一个框架112,该框架112设置在底板111上,且与底板111围出一个容置空间,多个发光芯片120设置在底板111上,且位于该容置空间内。示例地,如图3所示,管壳110包括两个框架112,该两个框架112设置在底板111上,且每个框架112与底板111围出一个容置空间,多个发光芯片120排列成两行,每行发光芯片120设置在底板111上,且位于对应的一个容置空间内。
需要说明的是,材料对热量的散发效率可以通过热阻反映。热阻R表示单位面积、单位厚度的材料阻止热量流动的能力。R=L/(K*A),其中A表示导热面积,单位为平方米(也即m
2);L表示导热路径的长度,单位为米(也即m);K表示导热物体的导热率。导热率K=d/R,d表示材料的厚度。对于同种材料其热阻R与厚度d成正比,即使对于非单一材料,总的趋势也是材料的热阻随材料的厚度增加而增大。
相关技术中,发光芯片设置在封装结构中,封装结构的底部通过焊料与底板焊接。如此发光芯片产生的热量需要经由封装结构的底部、焊料以及底板才能散发至外界,该热量散发路径较长,热阻较大,散发效率较低。由于焊料的导热率通常较低,如仅有50~60瓦每米度(W/mK),故热量通过该焊料散发的效果较差。并且焊料焊接过程可能会产生气泡或空洞,该气泡或空洞会阻碍热量的散发,会进一步降低热量的散发效率。
本公开一些实施例中,发光芯片120设置在底板111上,发光芯片120产生的热量通过底板111向外界散发。相比于相关技术中发光芯片产生的热量需要先通过封装结构的底部传导至底板,才能通过底板散发至外界,本公开一些实施例提供的激光器中减少了热量散发至外界所需要经过的物体,缩短了热量传导路径,进而可以提高热量散发效率,降低热量聚集对发光芯片120造成损伤的风险,提高了激光器100的可靠性。
在一些实施例中,激光器100还包括至少一个第一导电层113,至少一个第一导电层113设置在底板111上,且位于最外侧发光芯片120远离与其相邻的发光芯片120的一侧。本公开对第一导电层113的数量不做限定,其可以是一个或者多个。
在一些实施例中,第一导电层113的数量是发光芯片120的行数的两倍。
示例地,如图1所示,多个发光芯片120沿X方向排列成一行,激光器100包括两个第一导电层113。多个发光芯片120中,位于最外侧的两个发光芯片120分别称为第一发光芯片121和第二发光芯片122。一个第一导电层113位于第一发光芯片121远离与其相邻的发光芯片120的一侧,另一个第一导电层113位于第二发光芯片122远离与其相邻的发光芯片120的一侧。
示例地,如图3所示,多个发光芯片120沿Y方向排列成两行,激光器100包括四个第一导电层113。按照从上到下的顺序,第一行发光芯片120中位于最外侧的两个发光芯片120分别称为第一发光芯片121和第二发光芯片122,第二行发光芯片120中位于最外侧的两个发光芯片120分别称为第三发光芯片123和第四发光芯片124。一个第一导电层113位于第一发光芯片121远离与其相邻的发光芯片120的一侧,一个第一导电层113位于第二发光芯片122远离与其相邻的发光芯片120的一侧,一个第一导电层113位于第三发光芯片123远离与其相邻的发光芯片120的一侧,一个第一导电层113位于第四发光芯片124远离与其相邻的发光芯片120的一侧。
第一导电层113与对应的发光芯片120连接,第一导电层113向该发光芯片120输送电流,进而该发光芯片120可以在该电流的作用下发出激光。需要说明的是,本公开一些 实施例中所述的导电层并非完全覆盖底板111的整层结构,而是面积较小厚度较薄的片状结构。
在一些实施例中,底板111上还可以设置有导电块,该导电块与第一导电层113通过底板111内部的线路连接。外部电源连接至该导电块,电流通过该导电块传输至第一导电层113,进而传输至与第一导电层113连接的发光芯片120。导电块可以设置在底板111的边缘区域,或者底板111上其他便于连接外部电路的位置。
本公开一些实施例中以框架112呈方环状为例进行说明。当然,框架112也可以呈其他环状,如圆环状或者五边形的环状等,本公开一些实施例对此不作限定。
请参考图2,激光器100还包括至少一个台阶114,至少一个台阶114设置在框架112的内壁上。
示例地,激光器100包括一个台阶114,该台阶114设置在框架112的内壁上。例如,该台阶114为环形,且环绕框架112的整个内壁。示例地,激光器100包括多个独立的台阶114,多个台阶114间隔设置在框架112的内壁上。例如,如图2所示,激光器100包括两个台阶114,该两个台阶114分别设置在框架112相对的两个内壁上。
激光器100还包括至少一个第二导电层115和至少一个导电部116,至少一个第二导电层115设置在台阶114远离底板111的表面,至少一个导电部116设置在框架112的内部。第一导电层113通过对应的导电部116与第二导电层115连接,第二导电层115通过导线与对应的发光芯片120连接,从而实现第一导电层113与发光芯片120连接。本公开对第二导电层115和导电部116的数量不做限定,其可以是一个或者多个。示例地,第二导电层115和导电部116的数量均与第一导电层113的数量一一对应。
示例地,激光器100包括一个第二导电层115,该第二导电层115设置在台阶114远离底板111的表面。
示例地,激光器100包括多个第二导电层115。在此基础上,当激光器100包括一个台阶114时,多个第二导电层115间隔设置在台阶114远离底板111的表面;当激光器100包括多个台阶114时,每个第二导电层115设置在对应的台阶114远离底板111的表面。
需要说明的是,第二导电层115的设置位置与发光芯片120的电路连接方式相关。示例地,如图2所示,分别与两个第二导电层115连接的两个发光芯片120为最外侧的两个发光芯片120,其分别靠近框架112相对的两个内壁,则该两个第二导电层115相对设置。若分别与两个第二导电层115连接的两个发光芯片120为相邻的两个发光芯片120,其均靠近框架112的一个内壁,则该两个第二导电层115间隔设置。
在一些实施例中,激光器100还包括至少一个第三导电层,至少一个第三导电层设置在框架112靠近底板111的表面上。第三导电层的位置与第一导电层113的位置对应,且与对应的第一导电层113连接。本公开对第三导电层的数量不做限定,其可以为一个或者多个。示例地,第三导电层的数量与第一导电层113的数量一一对应。
示例地,第三导电层的面积小于对应的第一导电层113的面积,第三导电层通过导电焊料(如金锡焊料)与对应的第一导电层113焊接。导电部116的两端分别与对应的第三导电层和第二导电层115电连接,如此底板111上设置的发光芯片120通过导线连接第二导电层115,进而该发光芯片120可以通过导电部116以及第三导电层连接至底板111上的第一导电层113,进而实现发光芯片120与外部电源的连接。
在一些实施例中,激光器100中的多个发光芯片120可以排成一行或多行,每行发光芯片120可以串联,每行发光芯片120发出的激光的颜色可以相同。每行发光芯片120中位于最外侧的两个发光芯片120分别连接其靠近的第二导电层115,一个第二导电层115通过对应的第一导电层113与电源正极连接,另一个第二导电层115通过对应的第一导电层113与电源负极连接。如此,每行发光芯片120均可以实现与电源正极和负极连接,进而可以接收电源输送的电流。
在一些实施例中,激光器100中的框架112的材质包括陶瓷,示例地,框架112的材质可以为氧化铝和/或氮化硅陶瓷材料。由于氧化铝或氮化硅陶瓷材料具有较高的硬度和较大的导热系数,不仅能够对设置在框架112内的发光芯片120起到保护作 用,还能够快速将发光芯片120发光时所产生的热量导出,提升了激光器100的性能。当然,框架112也可以为其他具有较高硬度和良好导热性能的陶瓷材料,本公开实施例对此不做限定。
相比于目前的多芯片激光二极管(multi_chip Laser Diode,MCL)型的激光器,本公开实施例中提供的激光器100为陶瓷封装方式的激光器,通过底板111上的第一导电层113输入电流,无需在框架112上设置导电引脚,该种激光器100的结构简单,且更有利于激光器100的容置空间的气密性,且封装得到的激光器100牢固可靠,损坏风险较低。
该种激光器100的热传导速率较快,有助于发光芯片120产生的热量的散发,降低发光芯片120的损坏风险。由于散热效果较好,进而体积较小的激光器100中可设置的发光芯片120的数量较多,可以更有利于激光器100用于大功率器件上。由于体积较小故其组装灵活度较高,多个激光器100可以串联或并联使用,可以在保证整体体积较小的基础上提高发光质量。
在一些实施例中,底板111的材质包括金属,底板111的厚度范围可以为1毫米~2毫米。示例地,底板111的材质包括铜,例如无氧铜。无氧铜是指氧含量不大于0.003%,杂质总含量不大于0.05%,铜的纯度大于99.95%的铜材料,导热系数为401W/mK。示例地,底板111的材料包括铝、氮化铝和碳化硅中的一种或多种。
需要说明的是,发光芯片120产生的热量需通过底板111散发,而铜的导热系数高达400瓦每米度(W/mK),该材料的散热效率较高,故可以保证发光芯片120产生的热量较快地散发。
在另一些实施例中,底板111的材质包括陶瓷。由于陶瓷材料具有良好的绝缘性和更高的热导率,且更耐高温和腐蚀,因此采用陶瓷材料制作激光器100中的底板111可以有利于发光芯片120产生的热量较快散发,保证激光器100的可靠性。
在一些实施例中,如图1和图3所示,激光器100还包括多个热沉130。多个热沉130设置在底板111上,每个发光芯片120位于对应的热沉130上,热沉130被配置为辅助对应的发光芯片120散热。示例地,多个热沉130与多个发光芯片120一一对应。
在一些实施例中,发光芯片120通过焊接或粘贴的方式固定在热沉130上。示例地,发光芯片120和热沉130采用高精度共晶焊接机进行焊接,形成芯片组件,也称为Cos(Chip on submount,简称Cos)组件。
需要说明的是,在发光芯片120与底板111之间设置热沉130,由于热沉130具有更大的导热系数,进而可以将发光芯片120发光时所产生的热量快速导出,避免该热量对发光芯片120的损坏。热沉130的材料可以包括金属、氮化铝、碳化硅或具有较大导热系数的陶瓷材料。
在一些实施例中,热沉130在X方向上的尺寸大于发光芯片120在X方向上的尺寸,热沉130在Y方向的尺寸大于发光芯片120在Y方向上的尺寸,热沉130的厚度为0.1-0.3mm,例如0.2mm。
发光芯片120与热沉130的固定方式可以是发光芯片120的整个底面固定在热沉130远离底板111的表面上,也可以是发光芯片120远离出光口的部分底面固定在热沉130远离底板111的表面上。
当发光芯片120的整个底面固定在热沉130远离底板111的表面上时,发光芯片120与热沉130的接触面积较大,进而增大了发光芯片120中被热沉130支撑的区域的面积,提高了发光芯片120的设置稳固性。当发光芯片120远离出光口的部分底面固定在热沉130远离底板111的表面上时,由于发光芯片120的部分底面不与任何物体接触,可以使发光芯片120发光时所产生的热量快速散发,提高了发光芯片120的散热效果。
在一些实施例中,请继续参考图1和图3,激光器100还包括多个反射棱镜140。每个反射棱镜140位于对应的发光芯片120的出光侧。发光芯片120向对应的反射棱镜140发出激光,反射棱镜140被配置为将该激光朝远离底板111的方向(如图4中的Z方向)反射。示例地,多个反射棱镜140与多个发光芯片120一一对应。
在一些实施例中,如图2和图28所示,激光器100还包括透光密封层150和准直镜组160。透光密封层150被配置为密封底板111与框架112围出的容置空间。底板111、框架112和透光密封层150围成一个封闭空间,多个发光芯片120设置在该封闭空间内,可以避免发光芯片120受到外界空气中的氧气的腐蚀,延长发光芯片120的使用寿命。
示例地,透光密封层150的边缘直接与框架112远离底板111的表面固定,以对该容置空间进行密封。透光密封层150的材质为可透光材料,包括玻璃或者树脂材料。示例地,透光密封层150为蓝宝石盖板,蓝宝石盖板不仅具有良好的透光性,还具有良好的导热性能和机械性能。
在一些实施例中,为了提高激光器100的性能,还可以根据发光芯片120的出光特性对透光密封层150的材料进行选择。例如,当发光芯片120为发出红色激光的红色发光芯片时,透光密封层150的材料可以选择对红色激光透光性较好的材料。
准直镜组160包括多个准直透镜,准直透镜被配置为对射入的激光进行准直。示例地,该多个准直透镜一体成型,在此基础上,准直镜组160远离底板111的一侧具有多个凸弧面,每个凸弧面所在的部分作为一个准直透镜。需要说明的是,对光线进行准直也即是调整光线的发散角度,使光线调整至尽可能接***行光。发光芯片120发出的激光可以被对应的反射棱镜140反射向透光密封层150,进而透光密封层150可以将该激光透射向准直镜组160中与该发光芯片120对应的准直透镜,以被该准直透镜准直后射出,进而实现激光器100的发光。示例地,多个准直透镜与多个发光芯片120一一对应。
在一些实施例中,如图4和图5所示,激光器100还包括至少一个凸台117,至少一个凸台117设置在底板111上,被对应的框架112包围,且多个发光芯片120设置在至少一个凸台117上。
示例地,激光器100包括一个凸台117。该凸台117设置在底板111上,且被框架112包围,多个发光芯片120设置在该凸台117远离底板111的表面。示例地,如图4所示,激光器100包括两个凸台117。该两个凸台117均设置在底板111上,且每个凸台117被对应的一个框架112包围。多个发光芯片120排列成两行,每行发光芯片120设置在对应的一个凸台117远离底板111的表面。
可以理解的是,在激光器100包括热沉130的情况下,每个发光芯片120通过对应的热沉130设置在凸台117上。
在一些实施例中,各个凸台117的尺寸相同,各个凸台117上设置的发光芯片120的数量均相等,例如,各个凸台117上均设置有排成一行的7个发光芯片120。在另一些实施例中,各个凸台117的尺寸也可以不同,各个凸台117上设置的发光芯片120的数量也可以不同,发光芯片120的排布方式也可以不同。
以每个凸台117上设置有一行发光芯片120,且发光芯片120之间串联为例,每个凸台117沿发光芯片120的行方向(图5中的X方向)的两侧均设置有第一导电层113,也即每个凸台117位于两个第一导电层113之间,第一导电层113设置在底板111中凸台117之外的区域,即底板111中的非凸起区域。凸台117上最外侧的两个发光芯片120分别与该两个第一导电层113连接,外部电源的正极和负极分别与该两个第一导电层113连接,从而实现向该行发光芯片120输入电流。
若每个凸台117上设置多行发光芯片120,则每个凸台117***的第一导电层113的数量增多,例如为发光芯片120的行数的两倍。该种设置方式中,每行发光芯片120与第一导电层113的连接方式与上述连接方式类似,在此不再赘述。
示例地,每个凸台117的侧面与对应的框架112的内壁固定,以实现框架112固定在底板111上。例如,每个凸台117的侧面通过焊料与对应的框架112的内壁焊接。
在一些实施例中,凸台117可以为矩形凸台,该凸台117中用于设置发光芯片120的表面称为凸台117的顶面,凸台117中与该顶面连接的其他面即为凸台117的侧面。在将框架112固定在底板111上时,可以使框架112靠近底板111的表面上的第三导电层与底板111上的第一导电层113对准,之后将框架112套于对应的凸台117的***。进而,可以将框架112的内壁与凸台117的侧面进行焊接,以保证框架112与对应的凸台117围成 的容置空间底部的气密性。且将框架112靠近底板111的表面上的第三导电层与底板111上的第一导电层113通过导电焊料进行焊接,以保证第三导电层与第一导电层113的导通。
示例地,底板111与凸台117一体成型,底板111的厚度范围可以为1毫米~2毫米。需要说明的是,底板111的厚度指的是底板111中凸台117所在部分的厚度,也即是底板111中厚度最大的部分的厚度。示例地,底板111中的凸台117可以通过刻蚀或机械加工的方式形成。示例地,凸台117的高度范围可以为300微米~500微米,框架112的厚度范围可以为2毫米~3毫米。由于框架112的材质包括陶瓷,该材质的硬度较小,故该框架112的厚度需要较厚,以保证激光器100的耐用性。
在另一些实施例中,如图6和图7所示,底板111具有至少一个凹槽118。至少一个凹槽118内设置有对应的框架112,多个发光芯片120位于框架112与凹槽118形成的容置空间内。
示例地,底板111包括一个凹槽118。该凹槽118内设置有框架112,多个发光芯片120设置在凹槽118的底面上,且位于框架112与凹槽118形成的容置空间内。示例地,如图6所示,底板111包括两个凹槽118。每个凹槽118内设置有一个框架112,多个发光芯片120排列成两行,每行发光芯片120设置在对应的一个凹槽118的底面上,且位于凹槽118与框架112形成的容置空间内。
可以理解的是,在激光器100包括热沉130的情况下,每个发光芯片120通过对应的热沉130设置在对应的凹槽118的底面上。
在一些实施例中,各个凹槽118的尺寸相同,各个凹槽118中设置的发光芯片120的数量均相等,例如均为排成一行的7个发光芯片120。在另一些实施例中,各个凹槽118的尺寸也可以不同,各个凹槽118中设置的发光芯片120的数量也可以不同,发光芯片120的排布方式也可以不同。
以每个凹槽118中设置有一行发光芯片120,且发光芯片120之间串联为例,凹槽118的底面上设置有两个第一导电层113,且该两个第一导电层113分别位于该行发光芯片120所构成的整体沿发光芯片120的行方向(图7中的X方向)的两侧。凹槽118中最外侧的两个发光芯片120分别与该两个第一导电层113连接,外部电源的正极和负极分别与该两个第一导电层113连接,从而实现向该行发光芯片120输入电流。
若凹槽118中设置多行发光芯片120,则每个凹槽118中的第一导电层113的数量增多,例如为发光芯片120的行数的两倍。该种设置方式中每行发光芯片120与第一导电层113的连接方式与上述连接方式类似,在此不再赘述。
示例地,每个凹槽118的槽壁与对应的框架112的外壁固定,以实现框架112固定在底板111上。例如,每个凹槽118的槽壁通过焊料与对应的框架112的外壁焊接。
在一些实施例中,凹槽118为矩形凹槽,该凹槽118中用于设置发光芯片120的表面为凹槽118的底面,凹槽118中与该底面连接的其他面即为凹槽118的侧面,也即槽壁。在将框架112固定在底板111上时,可以使框架112靠近凹槽118的表面上的第三导电层与凹槽118中的第一导电层113对准,之后将框架112置于凹槽118中。进而,可以将框架112的外壁与凹槽118的槽壁进行焊接,以保证框架112与对应的凹槽118围成的容置空间的气密性。且将框架112靠近凹槽118的表面上的第三导电层与凹槽118中的第一导电层113通过导电焊料进行焊接,以保证第三导电层与第一导电层113的导通。
示例地,凹槽118的深度范围为300微米~500微米,底板111的厚度范围可以为1毫米~2毫米。需要说明的是,底板111的厚度指的是底板111中凹槽118之外的部分的厚度,也即是底板111中厚度最大的部分的厚度。示例地,底板111中的凹槽118可以通过刻蚀或机械加工的方式形成。
示例地,框架112的厚度范围为1毫米~2毫米。由于框架112位于凹槽118中,且与凹槽118的槽壁固定,因此该框架112可以被凹槽118的槽壁支撑。且由于槽壁的保护,框架112不会受到外界物体的碰撞,故框架112所需的强度较低,框架112的厚度可以较薄。如此凹槽118中可以有更多的空间设置发光芯片120,可以在凹槽118中设置更多的发光芯片120,进而提高激光器100的发光效率。此外,发光芯片120设置在底板111的 凹槽118中,故底板111中发光芯片120所在部分的厚度较小。发光芯片120发出激光时产生的热量可以顺着该凹槽118的底部向外界散发,该散发路径较短,热量的散发效率高,可以降低热量聚集对发光芯片120造成损伤的风险,进一步提高了激光器100的可靠性。
该种设置方式中,发光芯片120被包围至强度较高的底板111中,故激光器100被碰撞损坏的风险较低,激光器100的耐用性较高。并且,该种激光器100的整体厚度为底板111、透光密封层150以及准直镜组160的厚度之和,故激光器100较薄,有利于激光器100的小型化和薄型化。
示例地,图3~图7所示的激光器100中,分别被两个框架112包围的两行发光芯片120在通过对应的第一导电层113连接至对应的导电块后,可以通过将对应的导电块进行串联或并联,以实现该两个框架112包围的两行发光芯片120的串联或并联。如此,可以丰富激光器100的使用方式,提高激光器100的使用灵活性。
以下均以多个发光芯片120排布成多行,且管壳110包括一个框架112为例进行说明。
在一些实施例中,如图8所示,框架112中与发光芯片120的出光口相对的内壁为反射斜面,多个发光芯片120发出的激光被框架112的反射斜面反射后经透光密封层150出射。
由于框架112与发光芯片120的出光口相对的内壁为反射斜面,能够对发光芯片120所产生的激光进行反射,因此,无需在底板111上设置反射棱镜140,减少了反射棱镜140对底板111的面积的占用,使相同面积的底板111上能够设置更多的发光芯片120,从而提高激光器100的功率。
需要说明的是,框架112远离底板111的表面与框架112靠近底板111的表面之间的垂直距离不小于3mm,也即,框架112的高度不小于3mm,例如,可以为4mm。另外,该框架112的反射斜面可以如图9所示。这样,发光芯片120所射出的激光经框架112的反射斜面反射后可以改变激光的光路,使激光能够从透光密封层150射出。
示例地,框架112可以为方形的环状结构,此时,该框架112具有四个内壁,可以将框架112的四个内壁均设置为反射斜面,也可以将框架112的四个内壁中的部分内壁设置为反射斜面。
参考图8,框架112中相对设置的第一内壁1121和第二内壁1122设置为反射斜面。多个发光芯片120中的第一部分发光芯片120的出光口与第一内壁1121相对,除第一部分发光芯片120之外的第二部分发光芯片120的出光口与第二内壁1122相对。第一部分发光芯片120发出的激光入射至第一内壁1121,并经第一内壁1121反射后从透光密封层150射出,第二部分发光芯片120发出的激光入射至第二内壁1122,并经第二内壁1122反射后从透光密封层150射出。
示例地,图10示出了2列发光芯片120。左侧的一列发光芯片120为第一部分发光芯片120,其出光口朝向第一内壁1121。这样,左侧的一列发光芯片120所产生的激光能够入射至第一内壁1121,并经第一内壁1121反射后从透光密封层150射出。右侧的一列发光芯片120为第二部分发光芯片120,其出光口朝向第二内壁1122,这样,右侧的一列发光芯片120所产生的激光能够入射至第二内壁1122,并经第二内壁1122反射后也从透光密封层150射出。
在一些实施例中,框架112的反射斜面与底板111所在的平面之间的夹角可以为45度。示例地,框架112的第一内壁1121和第二内壁1122与底板111所在的平面之间的夹角为45度。这样,位于底板111、框架112和透光密封层150所围成的封闭空间内的多个发光芯片120所发出的激光以45度的入射角射入框架112的反射斜面上,并经框架112的反射斜面反射后以与透光密封层150所在的平面垂直的方向射出。
在一些实施例中,参考图11,可以通过在框架112的内壁上喷涂反射膜1123来得到反射斜面,这样可以提高框架112的反射斜面对于激光的反射效果。
示例地,框架112内壁上喷涂的反射膜1123的材料为三氧化二铝和/或二氧化硅,其可以采用磁控溅射的方式喷涂至框架112的内壁上。当然,反射膜1123的材料也可以为其它能够反射激光的材料,本公开实施例对此不做限定。
在一些实施例中,参见图8和图11,底板111设置有发光芯片120的表面为水平面,在这种情况下,多个发光芯片120中的每个发光芯片120与透光密封层150之间的距离相等。
在一个反射斜面对应一行或一列发光芯片120的情况下,根据框架112包括的反射斜面的数量,该多个发光芯片120可以对应的呈相应数量的列和行排列。示例地,如图10所示,当框架112的第一内壁1121和第二内壁1122为反射斜面时,该多个发光芯片120可以成两列排布,每列发光芯片120与一个反射斜面对应。当然,如果该框架112的四个内壁均为反射斜面,则该多个发光芯片120可以成两行和两列排列,其中,两列中的每列发光芯片120对应一个反射斜面,两行中的每行发光芯片120均对应一个反射斜面。
可以理解的是,反射斜面与一行或多行发光芯片120对应指的是,该一行或多行发光芯片120的出光口均朝向该反射斜面;反射斜面与一列或多列发光芯片120对应指的是,该一列或多列发光芯片120的出光口均朝向该反射斜面。
需要说明的是,一列或一行发光芯片120中的每个发光芯片120与框架112对应的反射斜面之间的距离可以相等,也可以不相等,本公开实施例对此不做限定。
在一些实施例中,该底板111设置有发光芯片120的表面为水平面,且框架112中的一个反射斜面对应多列或多行发光芯片120。此时,与框架112的同一反射斜面对应的多列或多行发光芯片120可以错开设置,也即,在每个发光芯片120与对应的反射斜面之间不设置有其他发光芯片120。这样,每个发光芯片120产生的激光就不会被其它发光芯片120所遮挡,从而能够保证每个发光芯片120发出的激光均能够入射至框架112对应的反射斜面,并经框架112的反射斜面反射后从透光密封层150射出。
示例地,参见图12,框架112的第一内壁1121和第二内壁1122为反射斜面,多个发光芯片120排布成6列。按照从左到右的顺序,第一列至第三列发光芯片120对应第一内壁1121,第四列至第六列发光芯片120对应第二内壁1122。第一列发光芯片120、第二列发光芯片120和第三列发光芯片120错开设置,第四列发光芯片120、第五列发光芯片120和第六列发光芯片120错开设置。需要说明的是,图12仅是本公开实施例给出的一种在水平的底板111上设置发光芯片120的示例,也可以通过其他方式在水平的底板111上设置多列发光芯片120,本公开实施例对此不作限定。
在另一些实施例中,如图13、图16和图17所示,底板111上设置的多个发光芯片120中每个发光芯片120与透光密封层150之间的距离和相应发光芯片120与框架112对应的内壁之间的距离呈反比。需要说明的是,框架112与发光芯片120对应的内壁指的是,与该发光芯片120的出光口相对的内壁。
在一些实施例中,参考图13,底板111包括多个台阶面,多个发光芯片120中每个发光芯片120设置在对应的台阶面上。
需要说明的是,图13中仅示出了6个发光芯片120,但是本公开实施例的激光器100中发光芯片120的数量不限于6个,可以为15个、20个或更多,本公开实施例对此不做限定。另外,图13中所示的距离N为多个发光芯片120中的一个发光芯片120与透光密封层150之间的距离,距离M为多个发光芯片120中的一个发光芯片120与框架112对应的内壁之间的距离。
在一些实施例中,如图14所示,可以采用刻蚀的方式在一整块铜板上刻蚀出多个台阶面。示例地,每个台阶面为一个矩形。每个台阶面在X方向上的尺寸不小于发光芯片120在出光方向上的尺寸,每个台阶面在Y方向上的尺寸与底板111在Y方向上的尺寸相等。台阶面与透光密封层150之间的距离从底板111中部向两侧依次增大,也即,台阶面在X方向上越靠近框架112的内壁,则与透光密封层150之间的距离越远,这样可以使设置在台阶面上的多个发光芯片120中的每个发光芯片120与透光密封层150之间的距离和相应发光芯片120与框架112对应的反射斜面之间的距离呈反比,也即,能够使越靠近框架112对应的反射斜面的发光芯片120,距离透光密封层150越远。
另外,与框架112的同一反射斜面对应的发光芯片120所在的相邻两个台阶面的高度差不小于发光芯片120的厚度,这样可以使出光口朝向同一方向的相邻的两列发光芯片120 中距离框架112的反射斜面较远的一列发光芯片120产生的激光不被距离框架112的反射斜面较近的一列发光芯片120所遮挡,从而能够保证每一列的发光芯片120发出的激光均能够入射至框架112对应的反射斜面,并经框架112的反射斜面反射后从透光密封层150射出。
需要说明的是,图14中仅示出了8个台阶面,但本公开实施例中底板111的台阶面的数量可以为3个、5个、10个等,本公开实施例对此不做限定。
在一些实施例中,参考图15,每个台阶面上可以设置多个发光芯片120,且同一台阶面上设置的多个发光芯片120的出光方向相同,均与框架112的同一个反射斜面相对。
需要说明的是,图15中的一个台阶面上仅示出了5个发光芯片120,但本公开实施例中底板111的台阶面上设置的发光芯片120的数量可以为3个、4个、7个等,本公开实施例对此不做限定。
在一些实施例中,多个发光芯片120可以通过粘贴或焊接的方式设置在底板111对应的台阶面上。如图15中的台阶面A1所示,将发光芯片120的整个底面与底板111的台阶面进行粘贴或焊接。这种情况下,发光芯片120与底板111的接触面积达到最大,可以增加发光芯片120的稳固性。当然,也可以如图15中的台阶面A2所示,将发光芯片120远离出光口的部分底面与底板111的台阶面进行粘贴或焊接,这种情况下,由于发光芯片120的部分底面不与任何物体接触,可以使发光芯片120发光时所产生的热量更快的散出,提高发光芯片120的散热速度。
可以理解的是,在激光器100包括热沉130的情况下,每个发光芯片120通过对应的热沉130与底板111的一个台阶面连接。另外,发光芯片120在热沉130上的设置方式以及热沉130在底板111的台阶面上的设置方式可以参考上述发光芯片120在热沉130上的设置方式以及热沉130在底板111上的设置方式,本公开实施例在此不再赘述。
在另一些实施例中,参考图17,激光器100还包括多个基板170,多个基板170设置在底板111上,且位于底板111与框架112围成的容置空间内。多个基板170的高度不同,每个基板170远离底板111的表面上均设置有多个发光芯片120,位于同一个基板170上的发光芯片120平行设置,且发光芯片120的出光口均与框架112的同一个反射斜面相对。
其中,基板170的高度是指基板170在垂直于底板111方向上的高度。图17中仅示出了6个基板,但本公开实施例的激光器100中基板170的数量不限于6个,可以为3个、4个或8个,本公开实施例对此不做限定。
需要说明的是,每个基板170中用于设置发光芯片120的表面在X方向上的尺寸不小于发光芯片120在出光方向上的尺寸。另外,多个基板170按照高度从高到低的顺序从底板111的中部向两侧排列,也即,越靠近框架112的反射斜面的基板170,与透光密封层150之间的距离越远。这样可以使设置在基板170上的多个发光芯片120中每个发光芯片120与透光密封层150之间的距离和相应发光芯片120与框架112对应的内壁之间的距离呈反比,也即,能够使越靠近框架112对应的反射斜面的发光芯片120,距离透光密封层150越远。
另外,与框架112的同一反射斜面对应的发光芯片120所在的相邻的两个基板170的高度差不小于发光芯片120的厚度,这样可以使出光口朝向同一方向的相邻的两列发光芯片120中距离框架112的反射斜面较远的一列发光芯片120产生的激光不被距离框架112的反射斜面距离较近的一列发光芯片120所遮挡,从而能够保证每一列的发光芯片120发出的激光均能够入射至对应的框架112的反射斜面,并经框架112的反射斜面反射后从透光密封层150射出。
参考图18,多个基板170中的每个基板170可以为一个长方体,基板170粘贴或焊接在底板111上,基板170远离底板111的表面设置有发光芯片120。需要说明的是,基板170的材质可以为铜,例如无氧铜,发光芯片120在基板170上的设置方式可以参考上述发光芯片120在底板111的台阶面上的设置方式,本公开实施例在此不再赘述。
可以理解的是,在激光器100包括热沉130的情况下,每个发光芯片120通过对应的热沉130与多个基板170中的一个基板170远离底板111的表面连接。发光芯片120在热 沉130上的设置方式以及热沉130在基板170上的设置方式可以参考上述发光芯片120在热沉130上的设置方式以及热沉130在底板111上的设置方式,本公开实施例在此不再赘述。
从上述介绍可知,发光芯片120设置在底板111的台阶面上或者设置在基板170上,且一个台阶面上或者一个基板170上设置一列发光芯片120,这样位于底板111、框架112和透光密封层150围成的封闭空间内的多个发光芯片120成多列排布。位于同一列中的各个发光芯片120与框架112对应的反射斜面之间的距离相等,且与框架112的同一反射斜面对应的相邻两列发光芯片120中,任意两个发光芯片120与透光密封层150之间的距离的差值不小于发光芯片120的厚度。也即,与框架112的同一反射斜面对应的相邻的两列发光芯片120中与框架112的反射斜面距离较远的一列发光芯片120在Z轴方向上的高度高于与框架112的反射斜面较近的一列发光芯片120的高度,使与框架112的反射斜面较远的一列发光芯片120所发出的激光不会被与框架112的反射斜面较近的一列发光芯片120所遮挡,从而能够保证每一列的发光芯片120发出的激光均能够入射至框架112对应的反射斜面,并经框架112的反射斜面反射后从透光密封层150射出。
由于反射棱镜140通常采用光学玻璃,而底板111通常采用金属材料,因此将反射棱镜140粘贴在底板111上时需要对反射棱镜140的底面镀金,再将镀金表面与底板111贴合。为了保证反射棱镜140与底板111之间的剪切力,需要保证反射棱镜140与底板111的接触尺寸,这就需要增大反射棱镜140的尺寸,导致镀金面积增大,同时还需要保证镀金均匀性,使得工艺难度和成本大幅增加。
为此,如图19所示,激光器100包括与多个发光芯片120对应的多个反射镜片300和与多个反射镜片300对应的多个支撑部400。多个反射镜片300位于管壳110之内,一个反射镜片300对应至少一个发光芯片120。反射镜片300位于对应的发光芯片120的出光侧,用于接收对应的发光芯片120出射的激光,并将该激光向远离底板111的方向反射。
通常情况下反射镜片300与发光芯片120的出光方向的夹角可以为45°。本公开实施例提供的激光器100中,通过反射镜片300反射发光芯片120出射的激光,可以通过调整反射镜片300来调节出光位置,从而达到更高的精度。
多个支撑部400固定于底板111之上,一个支撑部400对应至少一个反射镜片300。反射镜片300以预设角度斜靠在对应的支撑部400上,反射镜片300与对应的支撑部400相接触的部分相互粘贴。
本公开一些实施例提供的激光器100中,采用支撑部400和反射镜片300代替反射棱镜140,由于支撑部400可以采用金属材料进行制作,例如可以采用与管壳110相同的材料进行制作,那么在将支撑部400与管壳的底板111进行固定时,则不再需要在支撑部400的底面镀金,由此可以大大降低生产成本。
其次,支撑部400和反射镜片300采用分体结构,因此支撑部400与反射镜片300之间的相对位置关系可以灵活调整,且有利于缩小支撑部400的尺寸,使得发光芯片120与其对应的支撑部400和反射镜片300的占用空间得以减小,进而可以减小发光芯片120的封装尺寸,实现更小的光斑排列,使得激光器100封装实现小体积、低成本。
另外,反射镜片300斜靠在支撑部400上,那么反射镜片300的倾斜角度可以进行灵活控制,由于发光芯片120在贴装时可能存在识别、贴装公差等问题造成角度倾斜,此时可以通过调整反射镜片300的倾斜角度实现补偿。
在一些实施例中,如图20所示,支撑部400面向反射镜片300一侧的表面包括斜面S1,反射镜片300通过粘结层500与斜面S1粘贴。与此同时,反射镜片300靠近底板111的表面通过粘结层500与底板111粘贴。
支撑部400只有部分表面与反射镜片300接触,因此将与反射镜片300接触的表面设置为斜面S1,且该斜面S1可以根据反射镜片300的倾斜角度进行设置,以使支撑部400和反射镜片300之间可以完全贴合。
为了增加反射镜片300的固定强度,将反射镜片300与支撑部400之间采用粘结层500进行粘贴。由于反射镜片300与支撑部400之间的接触面积有限,本公开实施例将反射镜 片300与底板111之间采用粘结层500粘贴,以增强反射镜片300的固定强度。
如图20所示,为了便于散热,发光芯片120与底板111之间的粘结层500可以采用银胶,银胶的主要成分是银,这样通过金属材料作为粘结剂更有利于发光芯片120的散热。
在对激光器100进行封装的工艺中,激光器100中的各部件进行粘贴时所采用的粘结层500均可以采用银胶。由于反射镜片300通常采用光学玻璃进行制作,玻璃表面通过银胶无法直接与金属材质的表面进行贴合,需要在玻璃表面镀金才能保证较好的粘贴强度。因此,在公开一些实施例中,将反射镜片300与支撑部400的接触表面以及反射镜片300面向底板111的表面均设置镀金层G,再将镀金层G通过银胶与金属材质的支撑部400或底板111进行粘贴。
本公开一些实施例提供的激光器中,只需要在反射镜片300的局部区域进行镀金,大大减小了镀金的面积,从而降低反射镜片300的制作难度,也降低了生产成本。
在一些实施例中,如图20所示,底板111和支撑部400可以为分别制作,即两者为独立的,再将支撑部400粘贴在底板111上。由于粘结层500采用银胶,因此支撑部400可以采用金属材料进行制作,例如,可以采用金属铜等材料进行制作,在此不做限定。金属材质的支撑部400可以直接通过银胶与底板111粘贴。
在另一些实施例中,如图21所示,支撑部400还可以与底板111一体形成,支撑部400为底板111向环状框架112所在的一侧凸起形成的凸起结构,此时可以省略支撑部400与底板111之间的粘贴步骤,且支撑部400更加牢固,可以提升固定反射镜片300的稳定性。
在另一些实施例中,如图22所示,支撑部400面向反射镜片300一侧的表面为倾斜面S2,反射镜片300通过粘结层500与倾斜面S2粘贴。
支撑部400面向反射镜片300一侧的表面全部设置为倾斜面S2,反射镜片300可以直接靠在该倾斜面S2上,这样可以增加支撑部400与反射镜片300之间的接触面积,从而使得对反射镜片300的支撑更加稳固。
支撑部400与反射镜片300之间同样采用粘结层500进行粘贴,反射镜片300在与支撑部400的倾斜面S2重合的至少部分表面设置镀金层G,再将镀金层G通过银胶与支撑部400进行粘贴。
由于支撑部400与反射镜片300之间的粘贴强度完全可以支持反射镜片300的稳定性需求,因此只需要在反射镜片300面向支撑部的倾斜面S2的至少部分表面进行镀金用于粘贴即可,与采用反射棱镜的实施方式相比,大大减小了镀金的面积,从而降低反射镜片300的制作难度,也降低了生产成本。
在一些实施例中,如图22所示,底板111和支撑部400可以分别制作,即两者是独立的,再将支撑部400粘贴在底板111上。由于粘结层500采用银胶,因此支撑部400可以采用金属材料进行制作。例如,可以采用金属铜等材料进行制作,在此不做限定。金属材质的支撑部400可以直接通过银胶与底板111粘贴。
在另一些实施例中,如图23所示,支撑部400还可以与底板111一体形成,支撑部400为底板111向环状框架112所在的一侧凸起形成的凸起结构,此时可以省略支撑部400与底板111之间的粘贴步骤,且支撑部400更加牢固,可以提升固定反射镜片300的稳定性。
在一些实施例中,如图24所示,多个发光芯片120阵列排布,一个反射镜片300对应一个发光芯片120,一个支撑部400对应一个反射镜片300。支撑部400和反射镜片300相互粘贴。
在一些实施例中,支撑部400的高度为0.6mm-1.2mm,宽度为0.2mm-0.4mm;反射镜片的高度为1.4mm-1.5mm,宽度为0.1mm-0.2mm。反射镜片300的宽度根据发光芯片120出射光斑的尺寸进行设置,反射镜片300的宽度足以接收对应的发光芯片120的出射光斑。支撑部400的宽度大于反射镜片300的宽度,用于对反射镜片300提供稳定的支撑。另外,支撑部400的高度小于反射镜片300的高度,支撑部400用于支撑和固定反射镜片300,因此可以减小支撑部400的高度,以使反射镜片300依靠在支撑部400之上。
在另一些实施例中,如图25所示,支撑部400为沿着一列发光芯片120的排列方向延伸的条状结构;一个反射镜片300对应一个发光芯片120,一个支撑部400对应一列反射镜片300。出光方向相同的一列发光芯片120对应一个条状的支撑部400,支撑部400和反射片300相互粘贴。
在一些实施例中,支撑部400的高度为0.6mm-1.2mm;反射镜片的高度为1.4mm-1.5mm,宽度为0.1mm-0.2mm。反射镜片300的宽度根据发光芯片120出射光斑的尺寸进行设置,反射镜片300的宽度足以接收对应的发光芯片120的出射光斑。支撑部400直接形成条状,与底板111粘贴或与底板111为一体结构,可以增加支撑部400的稳定性,与此同时也可以简化支撑部400的结构,提高可制造性。支撑部400的高度小于反射镜片300的高度,支撑部400用于支撑和固定反射镜片300,因此可以减小支撑部400的高度,以使反射镜片300依靠在支撑部400之上。
在另一些实施例中,如图26所示,支撑部400和反射镜片300均为沿着一列发光芯片120的排列方向延伸的条状结构;一个反射镜片300对应一排发光芯片120,一个支撑部400对应一个反射镜片300。出光方向相同的一列发光芯片120对应一个条状的支撑部400和一个条状的反射镜片300,反射片300与支撑部400粘贴。
在一些实施例中,支撑部400的高度为0.6mm-1.2mm;反射镜片的高度为1.4mm-1.5mm。反射镜片300和支撑部400均设置成条状,与一列发光芯片120对应,发光芯片120的出射光斑只会入射到位于其出光方向上的反射镜片300上。支撑部400直接形成条状,与底板111粘贴或与底板111为一体结构,可以增加支撑部400的稳定性,与此同时也可以简化支撑部400的结构,提高可制造性。支撑部400的高度小于反射镜片300的高度,支撑部400用于支撑和固定反射镜片300,因此可以减小支撑部400的高度,以使反射镜片300依靠在支撑部400之上。反射镜片300设置为条状可以简化设计及对位的步骤,当反射镜片300设置为条状时,只需要在局部镀金与支撑部400通过银胶粘贴即可,不需要整面进行镀金,进一步降低成本。
如图27所示,当反射镜片300设置为条状时,可以在条状反射镜片300的两端进行镀金,形成镀金层G,再通过银胶与条状的支撑部400粘贴。由此减小镀金层的面积,从而降低反射镜片300的制作难度,也降低了成本。
本公开一些实施例提供的激光器100中,在对反射镜片300进行贴装的时候可以采用吸嘴移动反射镜片300的位置,同时采用电荷耦合器件(Charge Coupled Device,简称CCD)识别,通过吸嘴来对准反射镜片300的位置和控制反射镜片300的角度。
以上所述,仅为本公开的具体实施方式,但本公开的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本公开揭露的技术范围内,想到变化或替换,都应涵盖在本公开的保护范围之内。因此,本公开的保护范围应以所述权利要求的保护范围为准。
Claims (20)
- 一种激光器,包括:底板;框架,位于所述底板上;多个发光芯片,位于所述底板上且被所述框架包围,被配置为发出激光;第一导电层,设置在所述底板与所述框架对应的位置处,且与发光芯片连接,被配置为向所述发光芯片输送电流。
- 根据权利要求1所述的激光器,还包括凸台;所述凸台设置在所述底板上且被所述框架包围,所述凸台的侧面与所述框架的内壁固定,所述多个发光芯片设置在所述凸台上。
- 根据权利要求2所述的激光器,其中,所述凸台的高度为300微米~500微米,和/或,所述框架的厚度为2毫米~3毫米。
- 根据权利要求1所述的激光器,其中,所述底板还包括凹槽;所述框架设置在所述凹槽内,且所述凹槽的槽壁与所述框架的外壁固定,所述多个发光芯片设置在所述凹槽内。
- 根据权利要求4所述的激光器,其中,所述凹槽的深度为300微米~500微米,和/或,所述框架的厚度为1毫米~2毫米。
- 根据权利要求1所述的激光器,还包括:台阶,设置在所述框架的内壁上;第二导电层,设置在所述台阶远离所述底板的表面上;导电部,设置在所述框架内,其一端与所述第一导电层连接,另一端与所述第二导电层连接;所述发光芯片与所述第二导电层连接,通过所述导电部与所述第一导电层连接。
- 根据权利要求1所述的激光器,其中,所述框架的材质包括陶瓷。
- 根据权利要求1所述的激光器,其中,所述框架中与所述多个发光芯片的出光口相对的内壁设置为反射斜面,所述反射斜面被配置为将所述多个发光芯片发出的激光朝远离所述底板的方向反射。
- 根据权利要求8所述的激光器,其中,所述反射斜面与所述底板所在平面之间的夹角为45度。
- 根据权利要求8所述的激光器,还包括透光密封层;所述透光密封层设置在所述框架远离所述底板的表面,被配置为密封所述框架与所述底板形成的容置空间;发光芯片与所述透光密封层之间的距离和所述发光芯片与所述框架对应的内壁之间的距离呈反比。
- 根据权利要求10所述的激光器,其中,所述多个发光芯片成多列排布;同一列发光芯片中,各个发光芯片与所述框架对应的内壁之间的距离相等;与所述框架的同一内壁对应的相邻两列发光芯片中,任意两个发光芯片与所述透光密封层之间的距离的差值不小于所述发光芯片的厚度。
- 根据权利要求10所述的激光器,其中,所述底板包括多个台阶面,所述多个台阶面与所述透光密封层之间的距离从所述底板的中部向两侧增大,所述多个发光芯片设置在所述多个台阶面上。
- 根据权利要求10所述的激光器,还包括多个基板;所述多个基板设置在所述底板上,所述多个基板的高度从所述底板的中部向两侧减小,所述多个发光芯片设置在所述多个基板上。
- 根据权利要求1所述的激光器,包括:多个反射镜片,设置在所述底板上;每个反射镜片对应至少一个发光芯片,且位于所述至少一个发光芯片的出光侧,被配置为将所述至少一个发光芯片发出的激光朝远离所述底板的方向反射;和多个支撑部,固定于所述底板上;每个支撑部对应至少一个反射镜片,所述至少一个 反射镜片斜靠在对应的支撑部上,所述至少一个反射镜片与对应的支撑部相接触的部分相互粘贴。
- 根据权利要求14所述的激光器,其中,反射镜与发光芯片的出光方向之间的夹角为45度。
- 根据权利要求14所述的激光器,其中,支撑部面向对应的反射镜片的部分表面设置为斜面,所述反射镜片通过粘结层与所述斜面粘贴;所述反射镜片靠近所述底板的表面通过粘结层与所述底板粘贴。
- 根据权利要求14所述的激光器,其中,支撑部面向对应的反射镜片的表面设置为斜面,所述反射镜片通过粘结层与所述斜面粘贴。
- 根据权利要求14所述的激光器,其中,所述支撑部为所述底板向所述框架所在一侧突出形成的凸起。
- 根据权利要求1所述的激光器,还包括多个热沉;所述多个热沉设置在所述底板上,所述多个发光芯片设置在对应的热沉上。
- 一种激光投影设备,包括:光源,光机和镜头;所述光源包括如权利要求1所述的激光器,被配置为向所述光机发出照明光束;所述光机被配置为将所述光源发出的照明光束进行调制以获得投影光束;所述镜头被配置为将所述投影光束进行成像。
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CN202122280817.7U CN216162111U (zh) | 2021-09-18 | 2021-09-18 | 激光器 |
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