WO2023276731A1 - 保護膜付きチップの製造方法 - Google Patents
保護膜付きチップの製造方法 Download PDFInfo
- Publication number
- WO2023276731A1 WO2023276731A1 PCT/JP2022/024345 JP2022024345W WO2023276731A1 WO 2023276731 A1 WO2023276731 A1 WO 2023276731A1 JP 2022024345 W JP2022024345 W JP 2022024345W WO 2023276731 A1 WO2023276731 A1 WO 2023276731A1
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- WO
- WIPO (PCT)
- Prior art keywords
- protective film
- curable resin
- wafer
- resin film
- sheet
- Prior art date
Links
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
Definitions
- the present invention relates to a method of manufacturing a chip with a protective film.
- a protruding electrode made of eutectic solder, high-temperature solder, gold, etc.
- a so-called flip-chip mounting method has been adopted in which projecting electrodes are brought into face-to-face contact with corresponding terminal portions on a chip-mounting substrate and melted/diffusion bonded by a so-called face-down method. rice field.
- Chips used in this mounting method are obtained by singulating a wafer having protruding electrodes formed on its circuit surface.
- a curable resin film is usually applied to the circuit surface for the purpose of protecting the circuit surface and protruding electrodes of the wafer, and the resin film is cured to form a protective film on the circuit surface.
- Semiconductor chips with a protective film are obtained by dividing the wafer on which the protective film is formed into individual pieces.
- the curable resin film used in this mounting method is used in the form of a sheet for forming a protective film, which is a laminate with a support sheet. In the protective film-forming sheet, a curable resin film is provided on the entire surface of one surface of the support sheet.
- Patent Document 1 discloses a semiconductor device having a bonding step of bonding a curable resin film to a wafer surface on which protruding electrodes are formed, a curing step of curing an adhesive layer, and a dicing process of dicing the wafer. A method of manufacturing a device is described. The dicing process of this manufacturing method is performed after the curing process.
- the dicing process is performed after the curing process. Therefore, in the chip with a protective film obtained by this manufacturing method, the side surface of the chip (that is, the periphery of the chip) is not protected by the protective film. Therefore, the chip with the protective film may not have a sufficient protective effect due to the protective film.
- an object of the present invention is to provide a method for manufacturing a chip with a protective film, which can obtain a chip with a protective film in which the outer periphery of the chip is protected by a protective film.
- the present invention employs the following configurations.
- the curable resin film in the protective film forming sheet provided with a support sheet and a curable resin film provided on one side of the support sheet is placed in the shape of protrusions of a wafer having protrusion electrodes.
- a reduced-pressure attachment step of attaching to a surface having an electrode in a reduced-pressure environment, a curing step of forming a protective film on the surface of the wafer by curing the curable resin film after attachment, and removing the protective film.
- strain is generated in a test piece of a curable resin film having a diameter of 25 mm and a thickness of 1 mm under conditions of a temperature of 90 ° C. and a frequency of 1 Hz, and the storage elastic modulus of the test piece is measured.
- Gc1 the storage elastic modulus of the test piece when the strain of the test piece is 1%
- Gc300 the storage elastic modulus of the test piece when the strain of the test piece is 300%
- the upper portion of the protruding electrode is protruded through the curable resin film, or in the processing step, the upper portion of the protruding electrode penetrates the protective film.
- a method for manufacturing a chip with a protective film which can fill grooves formed in a wafer with a protective film and obtain a chip with a protective film in which the outer periphery of the chip is protected by the protective film. can provide.
- FIG. 4 is a cross-sectional view for schematically explaining a state in which a conventional protective film forming sheet is attached to a wafer having protruding electrodes. BRIEF DESCRIPTION OF THE DRAWINGS It is a top view which shows typically an example of the sheet
- FIG. 3 is a cross-sectional view of the protective film forming sheet shown in FIG. 2 taken along line II.
- FIG. 4 is a plan view schematically showing another example of the protective film forming sheet according to one embodiment of the present invention.
- FIG. 4 is a plan view schematically showing still another example of the protective film-forming sheet according to one embodiment of the present invention.
- FIG. 2 is a cross-sectional view for schematically explaining an example of a method for manufacturing a chip with a protective film according to one embodiment of the present invention
- FIG. 2 is a cross-sectional view for schematically explaining an example of a method for manufacturing a chip with a protective film according to one embodiment of the present invention
- FIG. 2 is a cross-sectional view for schematically explaining an example of a method for manufacturing a chip with a protective film according to one embodiment of the present invention
- FIG. 2 is a cross-sectional view for schematically explaining an example of a method for manufacturing a chip with a protective film according to one embodiment of the present invention
- FIG. 2 is a cross-sectional view for schematically explaining an example of a method for manufacturing a chip with a protective film according to one embodiment of the present invention
- FIG. 4A is a cross-sectional view for schematically explaining another example of the method for manufacturing a chip with a protective film according to one embodiment of the present invention.
- FIG. 4A is a cross-sectional view for schematically explaining another example of the method for manufacturing a chip with a protective film according to one embodiment of the present invention.
- FIG. 4A is a cross-sectional view for schematically explaining another example of the method for manufacturing a chip with a protective film according to one embodiment of the present invention.
- FIG. 4A is a cross-sectional view for schematically explaining another example of the method for manufacturing a chip with a protective film according to one embodiment of the present invention.
- FIG. 4A is a cross-sectional view for schematically explaining another example of the method for manufacturing a chip with a protective film according to one embodiment of the present invention.
- FIG. 4A is a cross-sectional view for schematically explaining another example of the method for manufacturing a chip with a protective film according to one embodiment of the present invention.
- a method for manufacturing a chip with a protective film according to one embodiment of the present invention has the following steps (a) to (c).
- the curable resin in the protective film-forming sheet comprising a support sheet and a curable resin film provided on one surface of the support sheet.
- the film is attached to the surface of the wafer having protruding electrodes under a reduced pressure environment.
- the surface of the wafer, to which the curable resin film is to be attached, having the protruding electrodes is provided with a surface for dividing the wafer into individual chips.
- grooves are formed to serve as wafer division points.
- the grooves are formed by forming cuts in the thickness direction of the wafer from the surface of the wafer having the projecting electrodes in a form corresponding to the size and shape of the intended chip. This technique is sometimes referred to as "half-cutting" in the art.
- the curable resin film is adhered to the surface of the wafer having protruding electrodes and having grooves to be divided into the wafer, and cured to form the surface of the wafer, and , a resin film for forming a protective film on the side surface of the chip.
- the groove is filled with the curable resin film by sticking the curable resin film, and as a result, the groove is filled with the cured product of the curable resin film, that is, the protective film.
- the protective film is cut between the chips, whereby the chip is obtained as a chip with a protective film having a protective film not only on the surface having the protruding electrodes but also on the side surfaces.
- the side surface means the periphery of the chip which is continuous with the surface having the protruding electrodes, and the rectangular chip has four side surfaces. A chip whose side surface is also protected in this way can obtain a higher protective effect due to the protective film.
- the protective film forming sheet used in the method for manufacturing a chip with a protective film according to this embodiment includes a support sheet and a curable resin film provided on one surface of the support sheet.
- the curable resin film is adhered to the surface of the wafer having protruding electrodes and grooves to be divided.
- the chip is obtained as a chip with a protective film having a protective film on the side surface (that is, the periphery of the chip) in addition to the surface having the projecting electrodes. .
- the support sheet has a first region provided with the curable resin film on the one surface.
- the support sheet may have, in addition to the first region, a second region surrounding the first region and not provided with the curable resin film. Since the protective film forming sheet has the first region and the second region in the support sheet, the curable resin film in the protective film forming sheet has the protruding electrodes of the wafer. When attached to the surface, formation of a thickened region of the curable resin film that is not attached to the wafer can be suppressed.
- the protective film-forming sheet described above will be described with reference to the drawings.
- FIG. 2 is a plan view schematically showing an example of the protective film-forming sheet
- FIG. 3 is a cross-sectional view of the protective film-forming sheet shown in FIG. 2 taken along line II.
- the same constituent elements as those shown in already explained figures are denoted by the same reference numerals as in the already explained figures, and detailed explanation thereof will be omitted.
- the protective film forming sheet 1 shown here includes a support sheet 11 and a curable resin film 12 provided on one surface 11 a of the support sheet 11 .
- the support sheet 11 surrounds the first region 111a provided with the curable resin film 12 and the first region 111a on one surface 11a, that is, the surface on the curable resin film 12 side. and a second region 112a where is not provided. That is, in the support sheet 11 , the entire first region 111 a is covered with the curable resin film 12 , and the entire second region 112 a is not covered with the curable resin film 12 .
- the support sheet 11 may have the first region 111a and may not have the second region 112a. That is, the support sheet 11 may be covered with the curable resin film 12 over the entire area of one surface 11a.
- FIG. 1 schematically illustrates how a protective film forming sheet 6 including a support sheet 11 having no second region and a curable resin film 62 is attached to a wafer 9 having protruding electrodes 91.
- FIG. It is a sectional view for doing.
- a region 622 near the peripheral portion has a curable resin film Normally, there is a region 621 where 62 is attached to wafer 9 and a region where the temperature is lower than region 620 near wafer 9 which is not attached to wafer 9 . This is for the following reasons.
- the region 621 of the curable resin film 62 attached to the wafer 9 is normally heated by using the heated wafer 9 as a heat source, for example, as described later. This is because the heat easily propagates and the temperature rises, whereas the heat hardly propagates to the region 622 in the vicinity of the peripheral edge, which is far away from the wafer 9 .
- the curable resin film 62 tends to flow easily between the region 621 attached to the wafer 9 and the region 620 near the wafer 9 not attached to the wafer 9, whereas the curable resin film 62 In the region 622 near the periphery where the temperature is low, the fluidity is low, and the flowing curable resin film 62 is blocked. Therefore, the phenomenon that the region of the curable resin film 62 not attached to the wafer 9, particularly the region 620 in the vicinity of the wafer 9, becomes thicker than the region 621 attached to the wafer 9 is conspicuous. becomes.
- the curable resin film in the protective film forming sheet is applied to the surface of the wafer having the protruding electrodes.
- the area of the curable resin film not attached to the wafer can be narrowed or eliminated, and the amount of flowing curable resin film can be reduced, so the thickness of the curable resin film can suppress the formation of thickened regions.
- the formation of the region where the curable resin film is thick can be suppressed to a greater extent.
- the second region 112a on one surface 11a of the support sheet 11 is preferably exposed (that is, it is an exposed surface).
- the curable resin film 12 is adhered to the surface of the wafer having protruding electrodes and having grooves to be divided into the wafer, and cured to form the surface of the wafer. and a resin film for forming a protective film on the side surface of the chip.
- wafer refers to elemental semiconductors such as silicon, germanium, and selenium, and compound semiconductors such as GaAs, GaP, InP, CdTe, ZnSe, and SiC. Semiconductor wafers; An insulator wafer made of an insulator can be mentioned.
- a circuit is formed on one surface of these wafers, and in this specification, the surface of the wafer on which the circuit is formed is referred to as a "circuit surface".
- the surface of the wafer opposite to the circuit surface is called the "back surface”.
- the surface of the wafer having protruding electrodes and the circuit surface are synonymous.
- the wafer is divided into chips by means of dicing or the like.
- the side of the chip on which the circuit is formed is called the "circuit side”
- the side opposite to the circuit side of the chip is called the "back side”.
- Protrusive electrodes such as bumps and pillars are provided on both the circuit surface of the wafer and the circuit surface of the chip.
- the projecting electrodes are preferably made of solder.
- the support sheet 11 supports the curable resin film 12.
- the support sheet 11 more specifically, for example, a sheet consisting only of a base material having such a support function; a release film; mentioned.
- the adhesive sheet may be attached to a jig such as a ring frame at its peripheral portion.
- the planar shape of the support sheet 11, that is, the shape of the one surface 11a is circular.
- the planar shape of the support sheet 11 is circular. is particularly preferred.
- the planar shape of the support sheet 11 is a shape that matches the inner circumference of a jig such as a ring frame, which is usually circular, so that the support sheet 11 is attached to a jig such as a ring frame. This is because there is no need to cut the
- the planar shape of the curable resin film 12, that is, the shape of the surface 12a opposite to the support sheet 11 side is circular.
- the wafer may be provided with an orientation flat or a notch for recognizing or aligning the crystal orientation, and the shape of the wafer may not be a perfect circle. It can be made into the plane shape which united.
- the centers of the supporting sheet 11 and the curable resin film 12 are aligned and concentrically arranged. are placed.
- the maximum width of the support sheet 11 that is, the diameter D11
- the maximum width of the curable resin film 12 that is, the diameter D12.
- the planar shape and size of the first region 111a of the support sheet 11 are the same as the planar shape and size of the curable resin film 12 , and are circular with a diameter D12.
- the planar shape of the second region 112a of the support sheet 11 is a ring with a width of (D 11 -D 12 )/2.
- the area of the surface 12a of the curable resin film 12 opposite to the support sheet 11 side is the area of the circuit surface of the wafer to which the curable resin film 12 is adhered. It is preferably equal to or less than the area (that is, the area of the surface of the wafer having the protruding electrodes in a plan view).
- the maximum width (diameter) D12 of the curable resin film 12 is preferably equal to or less than the maximum diameter (for example, diameter) of the wafer to which the curable resin film 12 is attached.
- Wafers having a circular planar shape include, for example, those having diameters of 6 inches, 8 inches, 12 inches and 18 inches.
- a preferable curable resin film 12 to which any one of these wafers is attached is, for example, a maximum width (diameter) D12 of 140 to 150 mm, 190 to 200 mm, 290 to 300 mm, or 440 mm. ⁇ 450 mm.
- the width of the second region 112a ((D 11 ⁇ D 12 )/2) is 0 with respect to the maximum width (D 12 ) of the first region 111a. It is preferably 0.05 to 0.4 times, more preferably 0.07 to 0.3 times. Since the width of the second region 112a is equal to or greater than the lower limit value, when the support sheet 11 is an adhesive sheet or has the jig adhesive layer, the support sheet 11 can be used as a ring frame or the like. can reduce the possibility of the curable resin film 12 coming into contact with the jig. Since the width of the second region 112a is equal to or less than the upper limit value, it is possible to prevent the area of the second region 112a from becoming excessively wide.
- the support sheet 11 and the curable resin film 12 may each consist of one layer (that is, a single layer), or may consist of two or more layers.
- these multiple layers may be the same or different, and the combination of these multiple layers is not particularly limited.
- the plurality of layers may be the same or different
- all the layers may be the same, All of the layers may be different, or only some of the layers may be the same.” means that one is different from the other.
- the thickness T12 of the curable resin film 12 is not particularly limited, but is preferably 10 ⁇ m or more, more preferably 20 ⁇ m or more, and even more preferably 25 ⁇ m or more. Since T12 is a certain value or more in this way, when the curable resin film 12 is attached to the surface of the wafer having the protruding electrodes and the grooves formed, the grooves are filled with the curable resin.
- the film 12 can be filled to a higher degree without gaps.
- the base portions of the protruding electrodes of the wafer near the circuit surface can be covered more highly without gaps. That is, the curable resin film 12 is more advantageous in that it fills the grooves and covers the bases of the projecting electrodes.
- the upper limit of the thickness T12 of the curable resin film 12 is not particularly limited.
- T12 is preferably 200 ⁇ m or less, more preferably 130 ⁇ m or less, and even more preferably 80 ⁇ m or less.
- the term “thickness of the curable resin film” means the thickness of the entire curable resin film. means the total thickness of all layers
- Such a curable resin film 12 is soft and suitable for sticking to a sticking object having an uneven surface, such as a wafer having protruding electrodes and a wafer having grooves.
- the test piece is film-shaped and has a circular planar shape.
- the test piece may be a single-layer curable resin film 12 with a thickness of 1 mm. It is preferable that the laminated film is composed of The thicknesses of the plurality of single-layer curable resin films 12 constituting the laminated film may all be the same, all may be different, or only some may be the same, It is preferable that they are all the same from the viewpoint of ease of production.
- the "storage modulus of the test piece” means "a test piece of a curable resin film having a diameter of 25 mm and a thickness of 1 mm under conditions of a temperature of 90°C and a frequency of 1 Hz. is the storage elastic modulus of the test piece corresponding to this strain when a strain is generated.
- the curable resin film 12 spreads between the protruding electrodes so as to cover the protruding electrodes, adheres to the surface of the wafer having the protruding electrodes, and adheres to the surface of the protruding electrodes, particularly the surface of the wafer having the protruding electrodes.
- the base of the projecting electrode is embedded by covering the surface of the vicinity of the .
- step (a) when the curable resin film 12 is attached to the surface of the wafer having the protruding electrodes, it is preferable that the upper portions of the protruding electrodes protrude through the curable resin film 12 .
- step (c) the wafer after the formation of the protective film 12′, which is a cured product of the curable resin film 12, is divided and the protective film 12′ is cut to obtain chips with a protective film, which are protruding electrodes. It is preferable that the upper part of the is protruded through the protective film.
- step (a) when the upper portion of the protruding electrode protrudes through the curable resin film 12, the curable resin film 12 is suppressed from remaining on the upper portion including the top of the protruding electrode.
- the adhesion of the protective film 12', which is a cured product of the curable resin film 12, to the upper portions of the protruding electrodes is naturally suppressed.
- the chip with a protective film projects the upper part of the protruding electrode through the protective film, so that the protruding electrode of the semiconductor chip with a protective film and the circuit on the substrate are electrically connected. can be inhibited.
- the hardening resin film 12 covers the base of the protruding electrodes in the middle stage when the hardening resin film 12 starts to enter the grooves, and the hardening resin film 12 is covered with the protruding electrodes.
- the degree of distortion of the curable resin film 12 is greatly different from the final stage in which the grooves are sufficiently filled. More specifically, the distortion of the curable resin film 12 is large in the middle stage, and the distortion of the curable resin film 12 is small in the final stage.
- the X value is preferably 5,000 or less, more preferably 2,000 or less, and further preferably 1,000 or less in order to increase the effect of the curable resin film 12 covering the base of the projecting electrode. It is preferably 500 or less, particularly preferably 500 or less, and may be, for example, any of 300 or less, 100 or less, and 70 or less. The X value is 25 or more in terms of the effect of suppressing the remaining of the curable resin film 12 and the effect of sufficiently filling the groove with the curable resin film 12 above the protruding electrodes. is preferably 30 or more, more preferably 40 or more, particularly preferably 50 or more, and may be, for example, 60 or more.
- Gc1 is not particularly limited, but Gc1 is preferably 1 ⁇ 10 4 to 1 ⁇ 10 6 Pa, more preferably 3 ⁇ 10 4 to It is more preferably 7 ⁇ 10 5 Pa, and even more preferably 5 ⁇ 10 4 to 5 ⁇ 10 5 Pa.
- Gc300 is not particularly limited, but Gc300 is preferably less than 15,000 Pa, more preferably less than 10,000 Pa, in order to increase the effect of the curable resin film 12 sufficiently filling the grooves. It is more preferably 5,000 Pa or less, particularly preferably 4,000 Pa or less, and may be, for example, 3,500 Pa or less. Gc300 is preferably 100 Pa or more, more preferably 500 Pa or more, and even more preferably 1000 Pa or more, in order to increase the effect of the curable resin film 12 covering the base of the projecting electrode. .
- both Gc1 and Gc300 preferably satisfy any of the numerical ranges described above.
- the storage elastic modulus of the curable resin film 12 is not limited to Gc1 and Gc300, and can be adjusted, for example, by adjusting the components contained in the curable resin film 12 and their contents. More specifically, for example, by using polyvinyl acetal as the polymer component (A) or the polymer (b) having no energy ray-curable group, which will be described later, the Gc300 is adjusted to an appropriate value, and X It becomes easier to adjust the value to an appropriate value. Further, by adjusting the type or content of additive (I) described later, it becomes easier to adjust the Gc1 to an appropriate value and adjust the X value to an appropriate value.
- the thickness of the support sheet 11 is not particularly limited, it is preferably 50 to 850 ⁇ m, more preferably 75 to 700 ⁇ m. When the thickness of the support sheet 11 is equal to or greater than the lower limit value, the strength of the support sheet 11 becomes higher. When the thickness of the support sheet 11 is equal to or less than the upper limit, the flexibility of the support sheet 11 is improved, and the handleability is further improved.
- the term "thickness of the support sheet” means the thickness of the entire support sheet. means
- FIG. 4 is a plan view schematically showing another example of the protective film forming sheet used in the method for manufacturing a semiconductor chip with a protective film according to this embodiment.
- the protective film forming sheet 2 shown here includes a support sheet 21 and a curable resin film 12 provided on one surface 21 a of the support sheet 21 .
- the support sheet 21 is long and strip-shaped, and a plurality of curable resin films 12 are arranged in a line in the longitudinal direction.
- the support sheet 21 is the same as the support sheet 11 in the protective film-forming sheet 1 shown in FIGS. 2 and 3, except that the shape and size in plan view are different.
- the thickness of the support sheet 21 is the same as the thickness of the support sheet 11 .
- the protective film forming sheet 2 includes a supporting sheet 21 in place of the supporting sheet 11, and the protective film forming sheet 1 shown in FIGS. is the same as
- the protective film forming sheet 2 is suitable for continuously attaching the curable resin film 12 to the surfaces of a plurality of wafers having protruding electrodes.
- the second region 212a on one surface 21a of the support sheet 21 is preferably exposed (that is, it is an exposed surface).
- the planar shape of the support sheet 21, that is, the shape of the one surface 21a is rectangular, preferably strip-shaped.
- the protective film forming sheet 2 When the protective film forming sheet 2 is viewed from above on the curable resin film 12 side in plan view, all the curable resin films 12 are provided on the support sheet 21 at regular intervals. All the curable resin films 12 in the protective film forming sheet 2 have the same shape and size.
- In the width direction of the protective film forming sheet 2 that is, the direction orthogonal to the longitudinal direction
- all the curable resin films 12 are arranged in the same position, and in the width direction of the protective film forming sheet 2 Matches the middle position.
- the maximum width D21 of the support sheet 21 is larger than the maximum width D12 of the curable resin film 12 , that is, the diameter D12.
- the maximum width of the support sheet 21 simply means the width of the support sheet 21 .
- the planar shape and size of the first region 211a of the support sheet 21 are the same as the planar shape and size of the curable resin film 12 , and are circular with a diameter D12.
- the planar shape of the second region 212a of the support sheet 21 is a shape in which a plurality of circles with a diameter D of 12 are removed in a line from a rectangle.
- the minimum value of the line segment connecting one point on the outer periphery of the first region 211a and one point on the outer periphery of the support sheet 21 is defined as L1, and two adjacent curability
- L 1 and L 2 /2 are 0.03 to 0.03 with respect to the maximum width (D 12 ) of the first region 211a. 0.25 times is preferable, and 0.05 to 0.2 times is more preferable.
- the value may be appropriately adjusted, for example, according to the specifications of an apparatus for continuously applying the curable resin film 12 to the surfaces of a plurality of wafers having protruding electrodes.
- L 1 is equal to (D 21 ⁇ D 12 )/2, but the formula expressing L 1 is the arrangement position of the first region 211a on the one surface 21a of the support sheet 21, It depends on the size of the first area 211a.
- the protective film forming sheet used in the manufacturing method according to the present embodiment is not limited to those shown in FIGS. may have been
- a band-shaped (in this case, annular) jig adhesive layer 13 may be provided in the protective film forming sheet 1 shown in FIG. 2, as shown in FIG. .
- the jig adhesive layer 13 is a layer for fixing the protective film forming sheet 1 to a jig such as a ring frame.
- a ring-shaped jig adhesive layer surrounding the first region 211a may be provided.
- a jig adhesive layer (for example, the jig shown in FIG. 5) is further formed on the adhesive layer of the adhesive sheet.
- An instrument adhesive layer 13) may be provided.
- the planar shape of the curable resin film 12 is circular. , and may be non-circular such as square.
- the protective film forming sheet 2 shown in FIG. may not be the same in shape and size.
- the arrangement positions of some or all of the curable resin films 12 may not be the same.
- the number of the curable resin films 12 is three or more, but the number of the curable resin films 12 is not limited to this.
- a support sheet may be provided on the side 12a) opposite to the .
- the support sheet 11 shown in FIG. good too.
- the support sheet 21 is a release film
- the support sheet 11 is an adhesive sheet or a support sheet having the jig adhesive layer (for example, the jig adhesive layer 13 shown in FIG. 5). is preferred.
- the protective film forming sheet of such a form continuous supply of the protective film forming sheet 1 shown in FIG. 2 is facilitated.
- both the support sheet 11 and the support sheet 21 have a second region where the curable resin film 12 is not provided.
- the support sheet 11 normally functions as a support sheet having the effects of the present invention.
- the curable resin film constituting the protective film-forming sheet may be either thermosetting or energy ray-curable, or may have both thermosetting and energy ray-curable properties. .
- energy ray means an electromagnetic wave or charged particle beam that has energy quanta.
- energy rays include ultraviolet rays, radiation, electron beams, and the like.
- Ultraviolet rays can be applied by using, for example, a high-pressure mercury lamp, a fusion lamp, a xenon lamp, a black light, an LED lamp, or the like as an ultraviolet light source.
- the electron beam can be generated by an electron beam accelerator or the like.
- energy ray-curable means the property of being cured by irradiation with an energy ray.
- the curable resin film can be formed using a curable resin film-forming composition containing its constituent materials.
- the curable resin film can be formed by applying the curable resin film-forming composition to the surface to be formed, and drying if necessary.
- the content ratio of the components that do not vaporize at room temperature is usually the same as the content ratio of the components in the curable resin film.
- the term "ordinary temperature” means a temperature that is not particularly cooled or heated, that is, a normal temperature.
- the coating of the curable resin film-forming composition may be performed by a known method, for example, air knife coater, blade coater, bar coater, gravure coater, roll coater, roll knife coater, curtain coater, die coater, A method using various coaters such as a knife coater, a screen coater, a Meyer bar coater and a kiss coater can be used.
- the conditions for drying the curable resin film-forming composition are not particularly limited regardless of whether the curable resin film is thermosetting or energy ray-curable. However, when the curable resin film-forming composition contains a solvent, which will be described later, it is preferable to heat and dry the composition.
- the solvent-containing curable resin film-forming composition is preferably dried by heating, for example, at 70 to 130° C. for 10 seconds to 5 minutes.
- the thermosetting resin film-forming composition is preferably dried by heating so that the composition itself and the thermosetting resin film formed from the composition are not thermally cured.
- thermosetting resin films include those containing a polymer component (A) and a thermosetting component (B).
- thermosetting resin film-forming composition examples include a thermosetting resin film-forming composition (III) containing a polymer component (A) and a thermosetting component (B) (this specification may be simply referred to as “composition (III)").
- the polymer component (A) is preferably polyvinyl acetal from the viewpoint of facilitating the adjustment of the above Gc300 to an appropriate value and the X value to an appropriate value.
- Examples of the polyvinyl acetal in the polymer component (A) include known ones. Among them, preferred polyvinyl acetals include, for example, polyvinyl formal and polyvinyl butyral, with polyvinyl butyral being more preferred.
- thermosetting component (B) examples include epoxy-based thermosetting resins composed of an epoxy resin (B1) and a thermosetting agent (B2); polyimide resins; and unsaturated polyester resins.
- thermosetting resin film and the composition (III) may further contain other components that are neither the polymer component (A) nor the thermosetting component (B).
- the other components include a curing accelerator (C), a filler (D), a coupling agent (E), a cross-linking agent (F), an energy ray-curable resin (G), a photopolymerization initiator (H ), additive (I), solvent, and the like.
- the filler (D) may be either an organic filler or an inorganic filler, but is preferably an inorganic filler.
- Preferable inorganic fillers include, for example, powders of silica, alumina, talc, calcium carbonate, titanium white, iron oxide, silicon carbide, boron nitride; beads obtained by spheroidizing these inorganic fillers; and surface modification of these inorganic fillers. products; single crystal fibers of these inorganic fillers; glass fibers and the like.
- the inorganic filler is preferably silica or alumina.
- the filler (D ) is preferably 5 to 45% by mass, more preferably 5 to 40% by mass, even more preferably 5 to 30% by mass.
- additive (I) examples include colorants, plasticizers, antistatic agents, antioxidants, gettering agents, rheology control agents, surfactants, and silicone oils.
- Additives (I) that are preferable in that the above-mentioned Gc1 can be adjusted appropriately and the X value can be easily adjusted include, for example, rheology control agents, surfactants, silicone oils, and the like.
- examples of the rheology control agent include polyhydroxycarboxylic acid esters, polyvalent carboxylic acids, and polyamide resins.
- examples of the surfactant include modified siloxane and acrylic polymer.
- examples of the silicone oil include aralkyl-modified silicone oil, modified polydimethylsiloxane, and the like, and the modifying group includes an aralkyl group; a polar group such as a hydroxy group; a group having an unsaturated bond such as a vinyl group and a phenyl group. is mentioned.
- the ratio of the content of the additive (I) to the total content of all components other than the solvent is , preferably 0.5 to 10% by mass, more preferably 0.5 to 7% by mass, and even more preferably 0.5 to 5% by mass.
- Each component such as a cross-linking agent (F), an energy ray-curable resin (G), a photopolymerization initiator (H), an additive (I), a solvent, etc. may be of only one kind, or two kinds thereof. or more, and when there are two or more types, their combination and ratio can be arbitrarily selected.
- Examples of the energy ray-curable resin film include those containing the energy ray-curable component (a).
- Energy ray-curable component (a) is a compound having an energy ray-curable group. and cationic polymerizable functional groups such as epoxy groups and oxetanyl groups.
- Examples of the energy ray-curable resin film-forming composition include, for example, the energy ray-curable resin film-forming composition (IV) containing the energy ray-curable component (a) (in the present specification, simply “composition (IV)” may be abbreviated) and the like.
- the energy ray-curable resin film and composition (IV) may further contain other components other than the energy ray-curable component (a).
- the other components include a polymer (b) having no energy ray-curable group, a thermosetting component, a filler, a coupling agent, a cross-linking agent, a photopolymerization initiator, an additive, a solvent, and the like. be done.
- the polymer (b) having no energy ray-curable group is preferably polyvinyl acetal from the viewpoint of facilitating the adjustment of the above-mentioned Gc300 to an appropriate value and the X value to an appropriate value.
- thermosetting resin film and the thermosetting component, filler, coupling agent, cross-linking agent, photopolymerization initiator, additive and solvent in the composition (IV) are the above-described thermosetting resin film and the Thermosetting component (B), filler (D), coupling agent (E), cross-linking agent (F), photopolymerization initiator (H), additive (I) and solvent in composition (III) belongs to.
- the support sheet constituting the protective film-forming sheet may be a known one.
- various resins can be used as the constituent material of the support sheet consisting of only the base material.
- the resin include polyethylene; polyolefins other than polyethylene such as polypropylene; ethylene-based copolymers (copolymers obtained using ethylene as a monomer); vinyl chloride-based resins (using vinyl chloride as a monomer Polystyrene; Polycycloolefin; Polyester; Copolymer of two or more of the above polyesters; Poly(meth)acrylate; Polyurethane; Polyurethane acrylate; polyphenylene oxide; polyphenylene sulfide; polysulfone; polyether ketone;
- the resin include polymer alloys such as mixtures of the polyester and other resins.
- (meth)acrylic acid is a concept that includes both “acrylic acid” and “methacrylic acid”. The same applies to terms similar to (meth)acrylic acid.
- (meth)acrylate is a concept that includes both "acrylate” and “methacrylate.”
- the number of resins constituting the support sheet consisting of only the base material may be one, or two or more, and when two or more are used, the combination and ratio thereof can be arbitrarily selected.
- the resin is preferably polyester such as polyethylene terephthalate or polybutylene terephthalate; polypropylene or the like.
- the support sheet (substrate) is a layer containing a polyester and a layer containing a polypropylene film, as long as it has one or more layers selected from the group consisting of a single layer. Alternatively, it may be a plurality of layers of two or more layers.
- a support sheet consisting only of the base material and containing a resin can be produced by molding a resin composition containing the resin.
- the release film as the support sheet itself is made of a material having releasability, or is provided with an easily peelable layer, so that the curable resin film can be easily peeled off. It may be a release film.
- the release film is the same as the support sheet consisting only of the base material, except that the release film itself is made of a releasable material or has an easily peelable layer on the base material. you can
- Examples of the material having releasability include fluororesin and the like.
- Examples of the easily peelable layer include a layer composed of a release agent such as a silicone-based release agent or an alkyd-based release agent.
- the pressure-sensitive adhesive sheet as the support sheet usually comprises a film-like or sheet-like base material and an adhesive layer, and furthermore, protruding electrodes are embedded between the base material and the pressure-sensitive adhesive layer. It may have an intermediate layer for Examples of the base material in the pressure-sensitive adhesive sheet include the same as the support sheet consisting of only the base material. Examples of the adhesive contained in the adhesive layer in the adhesive sheet include acrylic adhesives, rubber adhesives, urethane adhesives, and the like.
- the pressure-sensitive adhesive layer may be one whose adhesiveness is reduced by irradiation with energy rays.
- components contained in the intermediate layer in the pressure-sensitive adhesive sheet include cured products of urethane (meth)acrylate compounds, thermoplastic polyolefin resins (thermoplastic resins having structural units derived from olefins), and the like.
- the support sheet When grinding the back surface of the wafer, which will be described later, is performed with the support sheet attached to the curable resin film, it is preferable that the support sheet have the properties required for a back grind tape.
- the support sheet may be removed before the curing step described below, and a separate back grind tape may be attached to the curable resin film when the back surface of the wafer is ground.
- the curing step is accompanied by heating of the curable resin film, and the support sheet is deformed by heating, or the support sheet has an adhesive layer, and the adhesive layer is softened by heating.
- problems such as deformation of the support sheet and softening of the pressure-sensitive adhesive layer can be avoided.
- the jig adhesive layer may have, for example, a single-layer structure containing an adhesive component, or may contain a sheet serving as a core material and an adhesive component provided on both sides of the sheet. You may have a multi-layer structure with a layer that As the layer containing an adhesive component, the same ones as the adhesive layer in the adhesive sheet can be used.
- FIGS. 6A to 6E are cross-sectional views for schematically explaining an example of the method for manufacturing a chip with a protective film according to this embodiment.
- the case of using the protective film forming sheet 1 shown in FIGS. 2 and 3 will be described as an example, but the protective film forming sheet 2 shown in FIG. In both cases, the gist of the method for manufacturing a chip with a protective film is the same.
- the curable resin film in the protective film forming sheet is adhered to the surface of the wafer having protruding electrodes under a reduced pressure environment.
- the curable resin film is usually heated to increase fluidity.
- the curable resin film 12 in the protective film forming sheet 1 is attached to the surface 9a of the wafer 9 having the projecting electrodes 91 under a depressurized environment.
- the protective film forming sheet 1 and the curable resin film 12 in the protective film forming sheet 1 are provided on the surface 12 a opposite to the support sheet 11 side.
- a wafer 101 with a protective film forming sheet is obtained, which is provided with a wafer 9 and is configured such that the base portions of the protruding electrodes 91 of the wafer 9 near the surface 9a are covered with the curable resin film 12 . Note that FIG.
- FIG. 6A shows a state in which the top of the protruding electrode 91 is covered with the curable resin film 12, but the top of the protruding electrode 91 is not covered with the curable resin film 12. It may be exposed. Further, when the support sheet 11 is a pressure-sensitive adhesive sheet or a support sheet having a jig adhesive layer, the peripheral portion of the support sheet 11 may be attached to a jig (not shown) such as a ring frame. good.
- the support sheet 11 in the protective film forming sheet 1 has a second region 112a on one surface 11a. Therefore, when the curable resin film 12 in the protective film forming sheet 1 is attached to the surface 9a having the protruding electrodes of the wafer 9, the area of the curable resin film 12 not attached to the wafer 9 is narrowed. Or it can be eliminated, reducing the amount of flowing curable resin film. In addition, of the regions where the curable resin film 12 is not attached to the wafer 9, the region near the peripheral portion does not become low temperature.
- the curable resin film 12 receives a pressure in the thickness direction during affixing, thereby causing the curable resin film 12 to move outward in the radial direction of the wafer 9 (that is, leftward, rightward, or leftward and rightward in FIG. 6A). That is, from the area attached to the wafer 9 (that is, above the first area 111a of the support sheet 11) toward the area that is not attached to the wafer 9 (that is, above the second area 112a of the support sheet 11) Even if the curable resin film 12 flows, it is possible to suppress the formation of a thickened area of the curable resin film 12 on the second area 112 a of the support sheet 11 .
- the support sheet 11 only needs to have the first region 111a, and does not have to have the second region 112a.
- a plurality of grooves 90 are formed on the surface 9a of the wafer 9 having the protruding electrodes 91 to serve as division points of the wafer 9 when the wafer 9 is divided into individual chips.
- part or all of the grooves 90 are filled with the curable resin film 12 when the curable resin film 12 is attached to the surface 9 a of the wafer 9 .
- FIG. 6A shows a state in which all regions of the grooves 90 are filled with the curable resin film 12 .
- the groove 90 can be formed, for example, by half-cutting as described above.
- Examples of the dicing method include blade dicing and plasma dicing, and are not particularly limited.
- the depth of the groove 90 is not particularly limited as long as it is less than the thickness of the wafer 9, but is preferably 30 to 700 ⁇ m, more preferably 60 to 600 ⁇ m, even more preferably 100 to 500 ⁇ m. .
- the depth of the groove 90 is equal to or greater than the lower limit value, the ground surface easily reaches the wafer 9 by grinding the back surface 9b of the wafer 9 in the processing step described later, so that the wafer 9 can be divided more easily. . Since the depth of the groove 90 is equal to or less than the upper limit, the strength of the wafer 9 before grinding becomes higher.
- the width of the groove 90 is preferably 10-2000 ⁇ m, more preferably 30-1000 ⁇ m, even more preferably 40-500 ⁇ m, and particularly preferably 50-300 ⁇ m.
- the width of the groove 90 is equal to or greater than the lower limit value, it becomes easy to prevent chips after singulation from coming into contact with each other due to grinding vibration when grinding the back surface 9b of the wafer 9 in the processing step described later. Since the width of the groove 90 is equal to or less than the upper limit value, the strength of the wafer 9 before grinding becomes higher.
- the height of the projecting electrode 91 is not particularly limited, but is preferably 30 to 300 ⁇ m, more preferably 60 to 250 ⁇ m, even more preferably 80 to 200 ⁇ m.
- the function of the protruding electrode 91 can be further improved. Since the height of the protruding electrodes 91 is equal to or less than the upper limit value, the protruding electrodes 91 can be easily provided at a high density, and the possibility of damage to the protruding electrodes 91 during handling of the wafer 9 is reduced. can.
- the “height of the protruding electrodes” means the height of the protruding electrodes at the highest position from the surface of the wafer having the protruding electrodes (that is, the circuit surface). do.
- the thickness of the wafer 9 is not particularly limited, it is preferably 100-1000 ⁇ m, more preferably 200-900 ⁇ m, and even more preferably 300-800 ⁇ m.
- the thickness of the wafer 9 is equal to or greater than the lower limit value, it becomes easy to suppress warpage due to shrinkage of the curable resin film 12 during curing. Since the thickness of the wafer 9 is equal to or less than the upper limit value, it is possible to reduce the grinding amount of the back surface 9b of the wafer 9 and shorten the time required for grinding in the later-described processing steps.
- the curable resin film 12 When the curable resin film 12 is attached to the surface 9a of the wafer 9 while being heated, the curable resin film 12 can be heated by a known method.
- the wafer may be heated by increasing the temperature of the table on which the wafer is placed, and the curable resin film 12 may be heated using the heated wafer as a heat source.
- the temperature of the curable resin film 12 (that is, the heating temperature) when the curable resin film 12 is attached to the surface 9a of the wafer 9 while being heated is not particularly limited, but should be 50 to 150°C. is preferred, 60 to 130°C is more preferred, and 70 to 110°C is even more preferred.
- the temperature is equal to or higher than the lower limit, the curable resin film 12 can be filled in the bases of the protruding electrodes 91 and the grooves 90 to a higher degree without gaps.
- the temperature is equal to or lower than the upper limit, it is possible to suppress problems caused when the fluidity of the curable resin film 12 is too high.
- the pressure applied to the curable resin film 12 when the curable resin film 12 is adhered to the surface 9a of the wafer 9 is not particularly limited, but is 0.5. It is preferably 1 kPa to 1.5 MPa, more preferably 0.1 MPa to 1 MPa.
- the pressure is equal to or higher than the lower limit, the grooves 90 of the wafer 9 can be filled with the curable resin film 12 to a higher degree without gaps. Since the pressure is equal to or less than the upper limit, breakage of the wafer 9 can be highly suppressed.
- the surface of the protective film-forming sheet 1 on which the curable resin film 12 is formed that is, the space facing the surface to be attached to the wafer 9 is decompressed while protecting.
- the surface of the film forming sheet 1 opposite to the surface on which the curable resin film 12 is formed is set to atmospheric pressure or pressurized, so that the protective film forming sheet 1 is adsorbed to the wafer 9. and affixed. In this manner, it is preferable to apply the curable resin films 12 sequentially radially from the central portion of the surface 9a of the wafer 9 toward the outer peripheral portion.
- the curable resin 12 of the protective film forming sheet may be adhered to the surface of the wafer having the protruding electrodes using the film of the diaphragm pump.
- a device used in the sticking step for example, a sheet sticking device described in Japanese Patent Application Laid-Open No. 2008-66597 can be mentioned.
- the protective film-forming sheet 1 is applied in a reduced-pressure environment, so that the grooves 90 of the wafer 9 are filled with the curable resin film to a higher degree without gaps. As a result, the grooves 90 of the wafer 9 are filled with the cured product of the curable resin film 12, that is, the protective film.
- the chip with a protective film can be provided with a protective film not only on the surface having the protruding electrodes but also on the side surfaces (that is, the periphery of the chip).
- a chip with a protective film can obtain a higher protective effect due to the protective film.
- the thickness of the curable resin film 12 laminated to the circuit surface tends to be uniform compared to when a roller type laminator is used.
- the curable resin film 12 temporarily protrudes onto the second region 112a of the support sheet 11 by evenly applying pressure to the curable resin film 12.
- the curable resin film 12 typically protrudes over the entire area along the outer periphery of the wafer 9 . Therefore, the amount of protrusion of the curable resin film 12 is distributed over the entire area along the outer periphery of the wafer 9, and as a result, the amount of protrusion of the curable resin film 12 is reduced.
- the pressure of the reduced-pressure environment (that is, the degree of vacuum) is preferably 0.01 to 10 kPa, more preferably 0.03 to 1 kPa, and 0.05 to 0.5 kPa from the above viewpoints. is more preferred.
- the area of the surface 9a having the protruding electrodes 91 when viewed from above is the same as the support sheet 11 side of the curable resin film 12. is equal to or greater than the area of the opposite surface 12a (that is, the area of the surface of the curable resin film 12 attached to the wafer 9). Then, in the bonding step, such a wafer 9 is used, and the entire surface 12a of the curable resin film 12 (ie, the surface to be bonded to the wafer 9) can be bonded to the surface 9a of the wafer 9. preferable.
- the entire surface 12a of the curable resin film 12 is covered with the surface 9a of the wafer 9 in this manner, the amount of protrusion of the curable resin film 12 onto the second region 112a of the support sheet 11 can be further reduced. As a result, it is possible to further suppress the formation of thick regions of the curable resin film 12 that are not attached to the wafer.
- the combination of the curable resin film 12 and the wafer 9 suitable for use in the attaching step is ,
- a protective film is formed on the surface of the wafer by curing the pasted curable resin film.
- a protective film 12' is formed on the surface 9a of the wafer 9, as shown in FIG. 6B.
- a protective film-attached wafer 102 including the wafer 9 and the protective film 12' provided on the surface 9a of the wafer 9 having the projecting electrodes 91 is obtained.
- the protective film 12 ′ in the protective film-attached wafer 102 further has a support sheet 11 on the surface 12 b ′ opposite to the wafer 9 side.
- reference numeral 12a' denotes the surface of the protective film 12' opposite to the support sheet 11 side.
- the bases of the protruding electrodes 91 on the wafer 9 near the surface 9a are covered with the protective film 12', and the entire regions of the grooves 90 of the wafer 9 are filled with the protective film 12'.
- Curing of the curable resin film 12 may be performed by a known method according to the properties of the curable resin film 12 .
- the curable resin film 12 is thermosetting, the curable resin film 12 is cured by heating, and when the curable resin film 12 is energy ray-curable, the curable resin film 12 is cured by irradiating, for example, ultraviolet rays as energy rays.
- the heating temperature is preferably 100 to 200.degree. C., more preferably 120 to 150.degree.
- the heating time is preferably 0.5 to 5 hours, more preferably 1 to 3 hours.
- the illuminance of ultraviolet rays is preferably 180 to 280 mW/cm 2 and the amount of ultraviolet light is preferably 450 to 1000 mJ/cm 2 .
- a semiconductor chip with a protective film obtained by the manufacturing method according to the present embodiment has a protective film formed on the side surface of the chip through a curing process.
- a semiconductor chip with a protective film obtained through a processing step to be described later can be connected to, for example, a circuit formation surface of a circuit board.
- the cured resin film 12 inside the groove 90 must be cured from the viewpoint of protecting the protruding electrodes 91 even in the process performed until the chip is connected to the circuit board, such as the processing process to be described later, and in the processing process. Therefore, from the viewpoint of facilitating the working process, the hardening process is performed before the working process. Connection to the circuit forming surface of the chip is usually performed after the processing step.
- the curable resin film is cured before connecting the semiconductor chip with the protective film to the circuit forming surface of the circuit board.
- the curable resin film is cured without bonding the projecting electrodes to other electrodes.
- a so-called NCF Non-Conductive Film
- a curable film is interposed between the chip and the circuit forming surface, the chip is mounted on the circuit forming surface, and then the curable film is cured.
- the manufacturing method of the semiconductor chip described above is essentially different from the manufacturing method according to the present embodiment.
- the wafer after the protective film is formed is divided, and the protective film is cut to obtain a protective film having a chip and the cut protective film provided on the chip. Get tip with.
- the wafer 9 (in the protective film-equipped wafer 102) after forming the protective film 12' is divided. Thereby, the wafer 9 is singulated into chips 9', and as shown in FIG. Thus, a protective film-attached wafer divided body 103 having a continuous (one piece) protective film 12 ′ without being cut is obtained.
- the plurality of chips 9' are rectangular in plan view.
- the division of the wafer 9 can be performed, for example, by grinding the surface (back surface) 9b of the wafer 9 opposite to the surface 9a having the projecting electrodes 91 using a grinding means such as a grinder. At this time, the wafer 9 is ground from the rear surface 9b of the wafer 9 toward the surface 9a until the grinding surface reaches the groove 90 (that is, until the groove 90 appears). By doing so, the thickness of the wafer 9 is reduced, and the wafer 9 is divided using the grooves 90 as division points. The back surface 9b of the wafer 9 is ground until the thickness of the chip 9' reaches a target value.
- the dicing sheet 8 is attached to the rear surface 9b' of all the chips 9' in the wafer divided body 103 with the protective film, and the protective film 12' is cut. remove the support sheet 11 from the As a result, as shown in FIG. 6D, the wafer divided body 103 with the protective film is diced on one surface of the dicing sheet 8 with the chips 9' therein facing the dicing sheet 8 side. A sheet laminate 104 is obtained.
- the dicing sheet 8 may be a known one.
- Examples of the dicing sheet 8 include a sheet consisting of only a base material; a sheet including a base material and an adhesive layer provided on one surface of the base material. When the dicing sheet 8 having the base material and the adhesive layer is used, the adhesive layer is adhered to the back surface 9b' of the chip 9'.
- the protective film forming sheet eg, the protective film forming sheet 1 shown in FIGS. 2 to 3, the protective film forming sheet 2 shown in FIG. 4
- the dicing sheet eg, the When considering both the dicing sheet 8 shown in 6D
- the base material in the protective film forming sheet is referred to as the "first base material”
- the base material in the dicing sheet is referred to as the "second base material”.
- Both the second base material and the adhesive layer in the dicing sheet 8 may be known ones.
- Examples of the second base material include those similar to those of the first base material.
- Examples of the pressure-sensitive adhesive layer include those that are energy ray-curable or non-curable.
- non-curing means the property of not being cured by any means such as heating or energy ray irradiation.
- the protective film-attached wafer divisions 103 are held by the support sheet 11 on a jig such as a ring frame, before the dicing sheet 8 is attached to the protective film-attached wafer divisions 103, for example, the protective film-attached wafer division is performed.
- the support sheet 11 may be cut along the outline of the aggregate of the chips 9', that is, along the portion corresponding to the outer circumference of the wafer 9 before division. As a result, the jig and the protective film-attached wafer divided body 103 are separated.
- FIG. 6D shows the case where the support sheet 11 and protective film 12' are cut in this way.
- the surface layer portion of the surface 12b' of the protective film 12' opposite to the chip 9' side is removed by cleaning, thereby exposing the upper portion of the protruding electrode 91.
- FIG. 6A when the top of the projecting electrode 91 is covered with the curable resin film 12, it is preferable to perform such a cleaning process.
- FIG. 6E by cutting the protective film 12', as shown in FIG. 6E, a chip 9' and a protective film 120' after cutting provided on the chip 9' are provided. A plurality of chips 105 with a protective film are obtained.
- the "protective film after cutting” may be simply referred to as "protective film”. More specifically, the protective film 120' after cutting is provided on the surface 9a' having the projecting electrodes 91 of the chip 9'.
- the surface layer portion of the surface 12b' of the protective film 12' can be cleaned by a known method such as plasma irradiation.
- the protective film 12' is cut along the outer circumference (in other words, side surface) of the chip 9'. At this time, it is preferable to cut the protective film 12' filled between the adjacent chips 9' along the outer periphery (side surface) of the chips 9' to divide them into two. By doing so, the protective film 120' after cutting is also provided on each side surface of the adjacent chips 9', and for each chip 9', the surface 9a' having the projecting electrodes 91, Since a total of five surfaces including four side surfaces are protected by the protective film 120', a remarkably high protective effect of the protective film 120' can be obtained in the chip 9'.
- the protective film 12' can be cut by a known method.
- a known cutting means such as a dicing blade can be used to cut the protective film 12'.
- Chip 105 with protective films are separated from the dicing sheet 8 and picked up.
- Chip 105 with a protective film can be picked up by a known method.
- the protective film-attached chip 105 can be separated from the adhesive layer and picked up.
- the adhesive layer is curable, the chip 105 with the protective film can be picked up more easily after the adhesive layer is cured.
- the case where the dicing sheet 8 is used to cut the protective film 12' has been described as an example. may be further protected.
- a protective film forming sheet comprising a support sheet and a protective film forming film for forming a protective film on one surface of the support sheet is used instead of the dicing sheet 8.
- the support sheet may comprise a substrate and an adhesive layer, and in this case, the protective film-forming film is provided on the surface of the adhesive layer opposite to the substrate side. It is When the protective film forming sheet is used, the protective film forming film is attached to the rear surface 9b' of the chip 9'.
- a sheet for forming a protective film for example, a sheet for forming a protective film 1 shown in FIGS. 2 to 3 and a sheet for forming a protective film 2 shown in FIG. 4
- the protective film forming sheet is referred to as the "first protective film forming sheet”
- the protective film forming sheet provided with the protective film forming film is referred to as the "second
- These sheets for forming a protective film are referred to as "sheet for forming a protective film”.
- the support sheet for example, the support sheet 11 shown in FIGS. 2 and 3, the support sheet 21 shown in FIG.
- first support sheet 4 in the protective film forming sheet
- second support sheet 4 in the protective film forming sheet
- first support sheet 4 in the protective film forming sheet
- second support sheet 4 in the protective film forming sheet
- first support sheet the first support sheet
- second support sheet the second support sheet
- first pressure-sensitive adhesive layer the pressure-sensitive adhesive layer in the first support sheet
- second pressure-sensitive adhesive layer the pressure-sensitive adhesive layer in the second support sheet
- These pressure-sensitive adhesive layers are distinguished by the term "layer”.
- a protective film formed from the curable resin film using a protective film forming sheet for example, protective film 12′ shown in FIG.
- first protective film 6B and the like is referred to as a “first protective film”
- second protective film is referred to as a “second protective film” to distinguish between these protective films.
- the second support sheet in the second protective film-forming sheet may be the same as the first support sheet in the first protective film-forming sheet.
- the protective film-forming film in the second protective film-forming sheet may be curable or non-curable.
- the curable protective film-forming film may be either thermosetting or energy ray-curable, or may have both thermosetting and energy ray-curable properties.
- Non-curable overcoat-forming films are considered overcoats after they are applied (formed) to the intended object (ie, wafer).
- the second protective film forming sheet having the curable protective film forming film
- the second protective film forming sheet (that is, the protective film forming film) is placed on the chip 9'.
- the second protective film can be formed by curing the protective film-forming film at any stage after being attached to the back surface 9b' of the second protective film.
- the protective film-forming film or the second protective film is cut along the outer periphery of the chip 9' before the chip 105 with the protective film is separated from the second support sheet and picked up.
- the chip 105 with the protective film is further provided with the protective film-forming film after cutting or the second protective film on the rear surface 9b' of the chip 9'. It can be picked up by pulling away from the second support sheet in this state.
- the chip 105 with the protective film can be picked up more easily after the adhesive layer is cured.
- the method for manufacturing a chip with a protective film according to the present embodiment is the above-described manufacturing method (hereinafter sometimes referred to as "manufacturing method 1") as long as it includes the attaching step, the curing step, and the processing step in this order. It is not limited, and in the manufacturing method (manufacturing method 1) described above, a part of the configuration may be changed, deleted, or added.
- the step of completing the protective film forming sheet and the pasting step may be performed continuously. More specifically, in manufacturing method 1, the curable resin film formed on substantially the entire surface of the support sheet is cut into the same shape as the shape assumed for the first region of the support sheet, and the second region is cut. A cutting step of completing the protective film-forming sheet by removing the excess curable resin film so as to generate a cutting step may be included immediately before the attaching step. Completion of the protective film forming sheet and application to the wafer can be performed on the same production line by using an apparatus that continuously performs such a cutting step and the attaching step.
- FIG. 7A to 7E are cross-sectional views for schematically explaining another example of the method for manufacturing a chip with a protective film according to the present embodiment (hereinafter sometimes referred to as "manufacturing method 2").
- Manufacturing method 2 described below corresponds to manufacturing method 1 described above with the order of some of the steps changed.
- the vacuum bonding step is performed in the same manner as in the manufacturing method 1, and a wafer 101 with a protective film forming sheet is produced as shown in FIG. 7A.
- manufacturing method 2 as in manufacturing method 1, when the support sheet 11 has the second region 112a, formation of a thickened region of the curable resin film 12 can be suppressed.
- the support sheet 11 and the curable resin film 12 are cut along the outer circumference of the wafer 9 in the wafer 101 with the protective film forming sheet.
- the support sheet 11 is a pressure-sensitive adhesive sheet or a support sheet having a jig adhesive layer
- the peripheral edge of the support sheet 11 is attached to a ring frame or the like. It may be attached to a jig (not shown).
- the support sheet 11 and the curable resin film 12 may be cut to remove the support sheet 11 from the curable resin film 12 .
- the curable resin film 12 attached to the wafer 9 is cured in the same manner as in the curing step of manufacturing method 1, so that the wafer 9 is cured as shown in FIG. 7B.
- a protective film 12' is formed on the surface 9a.
- the protective film 12' in the protective film-attached wafer 102 further includes the support sheet 11 after cutting on the surface 12b' opposite to the wafer 9 side, Alternatively, the support sheet 11 is not provided.
- FIG. 7B shows the case where the support sheet 11 is not provided.
- the curing step is performed before the processing step, that is, before connecting the semiconductor chip with a protective film to the circuit formation surface of the circuit board, the curable resin film is cured.
- the surface layer portion of the surface 12b' of the protective film 12' opposite to the wafer 9 side of the protective film 12' is removed by cleaning. is exposed, and a back grind tape 7 different from the support sheet 11 is adhered to the surface 12b' of the protective film 12' after cleaning.
- manufacturing method 1 since the processing step is performed without peeling off the support sheet 11 from the wafer 9 on which the protective film 12' is formed, cleaning cannot be performed before the wafer 9 is divided. Therefore, in the manufacturing method 2, the thickness of the protective film 12' in the state of the wafer 9 on which the protective film 12' is formed is thinner than the initial thickness due to cleaning. It differs from body 103 .
- the surface layer portion of the surface 12b' of the protective film 12' can be cleaned by the same method as in the manufacturing method 1.
- the wafer 9 after forming the protective film 12' (that is, the wafer 102 with the protective film) is divided. As a result, the wafer 9 is singulated into chips 9', and as shown in FIG. Thus, a protective film-attached wafer divided body 103′ is obtained, which is provided with a continuous (that is, one sheet) protective film 12′ that is not cut.
- the division of the wafer 9 can be performed in the same manner as in manufacturing method 1.
- the dicing sheet 8 is attached to the back surface 9b' of all the chips 9' in the wafer divided body 103' with the protective film. Then, the back grind tape 7 is removed from the protective film 12'. As a result, as shown in FIG. 7D, a protective film-attached wafer division 103' was provided on one surface of the dicing sheet 8 with the chips 9' therein facing the dicing sheet 8 side. A dicing sheet laminate 104' is obtained.
- protective film 12' is then cut to obtain chip 105 with a protective film having the same configuration as manufacturing method 1, as shown in FIG. 7E.
- the protective film 12' can be cut in the same manner as in manufacturing method 1.
- FIG. 2 Also in the manufacturing method 2, for the same reason as in the manufacturing method 1, when the protective film 12' is cut along the outer periphery (in other words, the side surface) of the chip 9', the protection filled between the adjacent chips 9' is removed.
- the membrane 12' is cut along the perimeter (ie, sides) of the chip 9', dividing it into two halves.
- the obtained chip 105 with a protective film is separated from the dicing sheet 8 and picked up in the same manner as in manufacturing method 1.
- Manufacturing method 2 may have the cutting step just before the attaching step, as in manufacturing method 1.
- the surface layer portion of the protective film is removed by cleaning, so that the upper part of the protruding electrode protrudes through the protective film. (ie, exposure) has been described. Further, in the manufacturing method 2, before dividing the wafer in the processing step, by removing the surface layer portion of the protective film by cleaning, the upper portion of the protruding electrode protrudes (that is, is exposed) through the protective film. I explained the case.
- the timing for projecting the upper part of the projecting electrode is not limited to these, and may be from the time of attaching the curable resin film to the wafer in the vacuum bonding step, to the time of dividing the wafer in the processing step, or At any stage up to the cutting of the protective film, the upper part of the protruding electrode can be protruded.
- the upper portion of the protruding electrode may protrude through a curable resin film instead of the protective film.
- the upper portion of the protruding electrode is protruded through the curable resin film, or in the processing step, the upper portion of the protruding electrode is removed from the protective film. It is preferable to protrude through the membrane.
- the chip 105 with the protective film obtained above is flip-chipped to the connection pad portion on the circuit board at the top of the projecting electrode 91 therein. By connecting them, a substrate device can be produced (not shown). At this time, the protective film-attached chip 105 is connected to the circuit forming surface of the circuit board.
- the substrate device may be a semiconductor device.
- the present invention can be used to manufacture a chip or the like having protruding electrodes and having protective films on the surface and side surfaces having the protruding electrodes.
- a chip provided with such a protective film is suitable for fabricating a substrate device by flip-chip connecting it to a connection pad on a circuit board.
- Reference Signs List 1 2 Protective film forming sheet 11, 21 Supporting sheet 11a, 21a
- One side of supporting sheet (side of curable resin film side of supporting sheet) 111a First region on one side of support sheet 112a... Second region on one side of support sheet 12...
- Curable resin film 12a Opposite side of curable resin film to support sheet side surface 12′ protective film 120′ protective film after cutting 9 wafer 91 protruding electrode of wafer 9a protruding electrode of wafer Surface (circuit surface), 90 ... wafer groove, 9' ... chip, 105 ... chip with protective film, D 12 ... maximum width (diameter) of curable resin film, T 12 ⁇ Thickness of curable resin film
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Abstract
Description
本願は、2021年6月28日に、日本に出願された特願2021-106978号に基づき優先権を主張し、その内容をここに援用する。
これらのチップの実装においては、所謂フェースダウン方式により、それらの突起状電極をチップ搭載用基板上の相対応する端子部に対面、接触させ、溶融/拡散接合するフリップチップ実装方法が採用されてきた。
この実装方法で用いられる硬化性樹脂フィルムは、支持シートとの積層物である保護膜形成用シートの状態で使用される。保護膜形成用シートにおいては、支持シートの一方の面の全面に、硬化性樹脂フィルムが設けられている。
[1]支持シートと、支持シートの一方の面上に設けられた硬化性樹脂フィルムと、を備えた保護膜形成用シート中の前記硬化性樹脂フィルムを、突起状電極を有するウエハの突起状電極を有する面に減圧環境下で貼付する減圧貼付工程と、貼付後の前記硬化性樹脂フィルムを硬化させることによって、上記のウエハの前記面に保護膜を形成する硬化工程と、前記保護膜を形成後の前記ウエハを分割し、前記保護膜を切断することにより、チップと、前記チップに設けられた切断後の前記保護膜と、を備えた保護膜付きチップを得る加工工程と、を有し、前記ウエハの前記面に、前記ウエハの分割箇所となる溝が形成されている、保護膜付きチップの製造方法。
[2]前記保護膜形成用シートは、温度90℃、周波数1Hzの条件で、直径25mm、厚さ1mmの硬化性樹脂フィルムの試験片にひずみを発生させて、試験片の貯蔵弾性率を測定し、試験片のひずみが1%のときの試験片の貯蔵弾性率をGc1とし試験片のひずみが300%のときの試験片の貯蔵弾性率をGc300としたとき、下記式:
X=Gc1/Gc300
により算出されるX値が、19以上10000未満である、[1]に記載の保護膜付きチップの製造方法。
[3]前記減圧貼付工程において、前記突起状電極の上部を、前記硬化性樹脂フィルムを貫通して突出させるか、又は、前記加工工程において、前記突起状電極の上部を、前記保護膜を貫通させて突出させる、[1]又は[2]に記載の保護膜付きチップの製造方法。
本発明の一実施形態にかかる保護膜付きチップの製造方法は、以下の工程(a)~(c)を有する。
工程(a)においては、支持シートと、支持シートの一方の面上に設けられた硬化性樹脂フィルムと、を備えた保護膜形成用シート中の前記硬化性樹脂フィルムを、突起状電極を有するウエハの突起状電極を有する面に減圧環境下で貼付する。
工程(b)においては、貼付後の前記硬化性樹脂フィルムを硬化させることによって、上記のウエハの前記面に保護膜を形成する。
工程(c)においては、前記保護膜を形成後の前記ウエハを分割し、前記保護膜を切断することにより、チップと、前記チップに設けられた切断後の前記保護膜と、を備えた保護膜付きチップを得る。
前記溝は、目的とするチップの大きさ及び形状に対応した形態で、ウエハの突起状電極を有する面から、ウエハの厚さ方向において切れ込みを形成することで形成されている。
この手法は、当該分野において、「ハーフカット」と称することがある。
このとき、硬化性樹脂フィルムの貼付によって、前記溝が硬化性樹脂フィルムで充填され、その結果、硬化性樹脂フィルムの硬化物、すなわち保護膜で充填された状態となる。
前記チップを得た後、前記チップ間の前記保護膜を切断することによって、前記チップは、その前記突起状電極を有する面だけでなく、側面にも保護膜を備えた保護膜付きチップとして得られる。ここで、側面とは、前記突起状電極を有する前記面に連続している、チップの外周を意味し、矩形のチップは4つの側面を有する。
このように側面も保護されたチップは、保護膜による、より高い保護効果が得られる。
本実施形態にかかる保護膜付きチップの製造方法で用いられる保護膜形成用シートは、支持シートと、前記支持シートの一方の面上に設けられた硬化性樹脂フィルムと、を備えている。
前記硬化性樹脂フィルムは、突起状電極及び分割箇所となる溝を有するウエハの面に貼付される。前記硬化性樹脂フィルムを硬化することにより、前記チップは、その前記突起状電極を有する前記面に加えて、側面(すなわち、チップの外周)にも保護膜を備えた保護膜付きチップとして得られる。
前記支持シートは、その前記一方の面において、前記硬化性樹脂フィルムが設けられた第1領域を有する。前記支持シートは、第1領域に加えて、前記第1領域を囲み、かつ前記硬化性樹脂フィルムが設けられていない第2領域を有していてもよい。
保護膜形成用シートが、前記支持シート中に前記第1領域及び第2領域を有していることにより、前記保護膜形成用シート中の前記硬化性樹脂フィルムを、ウエハの突起状電極を有する面に貼付したとき、硬化性樹脂フィルムのウエハヘ貼付されておらず、かつ厚さが厚くなった領域の形成を抑制できる。
以下、図面を参照しながら、上述の保護膜形成用シートについて説明する。
以下の説明で用いる図は、本発明の特徴を分かり易くするために、便宜上、要部となる部分を拡大して示している場合があり、各構成要素の寸法比率等が実際と同じであるとは限らない。
図3以降の図において、既に説明済みの図に示すものと同じ構成要素には、その説明済みの図の場合と同じ符号を付し、その詳細な説明は省略する。
支持シート11は、その一方の面11a、すなわち硬化性樹脂フィルム12側の面において、硬化性樹脂フィルム12が設けられた第1領域111aと、第1領域111aを囲み、かつ硬化性樹脂フィルム12が設けられていない第2領域112aと、を有する。すなわち、支持シート11において、第1領域111aの全領域は、硬化性樹脂フィルム12によって被覆されており、第2領域112aの全領域は、硬化性樹脂フィルム12によって被覆されていない。
支持シート11は、第1領域111aを有していればよく、第2領域112aを有しなくてもよい。すなわち、支持シート11は、その一方の面11aの全領域は、硬化性樹脂フィルム12によって被覆されていてもよい。
後述するように、減圧貼付工程において硬化性樹脂フィルムが加熱される場合、硬化性樹脂フィルム62のウエハ9ヘは貼付されていない領域のうち、周縁部近傍の領域622には、硬化性樹脂フィルム62のウエハ9ヘ貼付されている領域621と、ウエハ9ヘ貼付されていないウエハ9の近傍の領域620よりも温度が低い領域が存在するのが通常である。これは、以下のような理由による。すなわち、硬化性樹脂フィルム62のウエハ9ヘ貼付されている領域621は、例えば、後述するように、加熱したウエハ9を加熱源として加熱されるのが通常であり、前記領域621と前記領域620には、その熱が伝播し易くて温度が上昇するのに対し、ウエハ9から遠く離れている前記周縁部近傍の領域622までは、熱が伝播し難いためである。これにより、硬化性樹脂フィルム62は、ウエハ9ヘ貼付されている領域621と、ウエハ9ヘ貼付されていないウエハ9の近傍の領域620と、では流動し易いのに対し、硬化性樹脂フィルム62の温度が低い周縁部近傍の領域622では、流動性が低く、流動してきた硬化性樹脂フィルム62を堰き止めてしまう。そのため、硬化性樹脂フィルム62のウエハ9ヘ貼付されていない領域、特にウエハ9の近傍の領域620では、ウエハ9ヘ貼付されている領域621よりも、その厚さが厚くなってしまう現象が顕著となる。
本明細書において、「ウエハ」としては、シリコン、ゲルマニウム、セレン等の元素半導体や、GaAs、GaP、InP、CdTe、ZnSe、SiC等の化合物半導体、で構成される半導体ウエハ;サファイア、ガラス等の絶縁体で構成される絶縁体ウエハが挙げられる。
ウエハは、ダイシング等の手段により分割され、チップとなる。本明細書においては、ウエハの場合と同様に、回路が形成されている側のチップの面を「回路面」と称し、チップの回路面とは反対側の面を「裏面」と称する。
ウエハの回路面とチップの回路面には、いずれもバンプ、ピラー等の突起状電極が設けられている。突起状電極は、はんだで構成されていることが好ましい。
硬化性樹脂フィルム12の平面形状、すなわち支持シート11側とは反対側の面12aの形状は、円形である。なお、ウエハには、結晶方位の認識やアライメントのために、オリエンテーション・フラットやノッチが設けられることがあり、ウエハの形状が完全な円形ではない場合があるが、硬化性樹脂フィルム12もこれに合わせた平面形状とすることができる。
支持シート11の幅の最大値、すなわち直径D11は、硬化性樹脂フィルム12の幅の最大値、すなわち直径D12よりも大きい。
支持シート11の第2領域112aの平面形状は、幅が(D11-D12)/2の円環である。
このような硬化性樹脂フィルム12を選択することにより、保護膜形成用シート1中の加熱された硬化性樹脂フィルム12を、ウエハの突起状電極を有する面に貼付したとき、支持シート11の第2領域112a上への硬化性樹脂フィルム12のはみ出し量をより低減できる。その結果、硬化性樹脂フィルム12のウエハヘ貼付されておらず、かつ厚さが厚くなった領域の形成を、より抑制できる。
平面形状が円形のウエハとしては、例えば、直径が6インチ、8インチ、12インチ及び18インチのものがある。これらのいずれかのウエハを貼付対象とする硬化性樹脂フィルム12で好ましいものとしては、例えば、その幅の最大値(直径)D12が、140~150mm、190~200mm、290~300mm、又は440~450mmであるものが挙げられる。
第2領域112aの幅が、前記下限値以上であることで、支持シート11が粘着シートである場合や、前記治具用接着剤層を有するものである場合に、支持シート11をリングフレーム等の治具に貼付するとき、硬化性樹脂フィルム12が前記治具に接触する可能性を低減できる。第2領域112aの幅が、前記上限値以下であることで、前記第2領域112aの面積が過剰な広さとなることを抑制できる。
また、ウエハの突起状電極の回路面近傍の基部を、より高度に隙間なく被覆できる。すなわち、硬化性樹脂フィルム12は、前記溝を充填する点と、突起状電極の基部を被覆する点で、より有利なものとなる。
X=Gc1/Gc300
により算出されるX値が、19以上10000未満であることが好ましい。このような硬化性樹脂フィルム12は、軟質であり、ウエハの突起状電極を有する面及び前記溝を有するウエハのように、凹凸面を有する貼付対象物への貼付用として好適である。
前記試験片は、厚さ1mmの単層の硬化性樹脂フィルム12であってもよいが、作製が容易である点では、厚さ1mm未満の単層の硬化性樹脂フィルム12が複数枚積層されて構成された積層フィルムであることが好ましい。
前記積層フィルムを構成する複数枚の単層の硬化性樹脂フィルム12の厚さは、すべて同じであってもよいし、すべて異なっていてもよいし、一部のみ同じであってもよいが、作製が容易である点では、すべて同じであることが好ましい。
工程(c)において、硬化性樹脂フィルム12の硬化物である保護膜12’を形成後のウエハを分割し、保護膜12’を切断することにより、得られる保護膜付きチップは、突起状電極の上部を、前記保護膜を貫通させて突出させたものであることが好ましい。
工程(a)において、突起状電極の上部が硬化性樹脂フィルム12を貫通して突出する場合、突起状電極の頭頂部をはじめとする上部においては、硬化性樹脂フィルム12の残存が抑制される。したがって、硬化性樹脂フィルム12の硬化物である保護膜12’も、突起状電極の上部においては、その付着が当然に抑制される。
保護膜付きチップが、突起状電極の上部を、前記保護膜を貫通させて突出させたものであることにより、保護膜付き半導体チップの突起状電極と、基板上の回路と、の電気的接続が阻害されることを抑制することができる。
硬化性樹脂フィルム12は、そのひずみが小さいときの貯蔵弾性率としてGc1を採用し、そのひずみが大きいときの貯蔵弾性率としてGc300を採用して、Gc1が高く、Gc300が低くなるようにして、X値(=Gc1/Gc300)を19以上10000未満に規定することにより、先に説明した優れた効果を奏する。
突起状電極の上部において、硬化性樹脂フィルム12の残存が抑制される効果及び硬化性樹脂フィルム12が前記溝を十分に充填する効果がより高くなる点では、X値は、25以上であることが好ましく、30以上であることがより好ましく、40以上であることがさらに好ましく、50以上であることが特に好ましく、例えば、60以上であってもよい。
硬化性樹脂フィルム12が突起状電極の基部を被覆する効果がより高くなる点では、Gc300は、100Pa以上であることが好ましく、500Pa以上であることがより好ましく、1000Pa以上であることがさらに好ましい。
硬化性樹脂フィルム12の含有成分等については、別途説明する。
支持シート11の厚さは、特に限定されないが、50~850μmであることが好ましく、75~700μmであることがより好ましい。支持シート11の厚さが前記下限値以上であることで、支持シート11がより高強度となる。支持シート11の厚さが前記上限値以下であることで、支持シート11の柔軟性が向上し、取り扱い性がより向上する。
ここに示す保護膜形成用シート2は、支持シート21と、支持シート21の一方の面21a上に設けられた硬化性樹脂フィルム12と、を備えている。
そして、保護膜形成用シート2は、支持シート11に代えて支持シート21を備えており、硬化性樹脂フィルム12の数が異なる点以外は、図2~図3に示す保護膜形成用シート1と同じである。
支持シート21の一方の面21aにおける第2領域212aは、露出している(すなわち、露出面である)ことが好ましい。
保護膜形成用シート2を、その硬化性樹脂フィルム12側の上方から見下ろして平面視したとき、支持シート21上において、すべての硬化性樹脂フィルム12は、互いに等間隔で設けられている。
保護膜形成用シート2中のすべての硬化性樹脂フィルム12は、その形状及び大きさが同じである。そして、保護膜形成用シート2の幅方向(すなわち、長手方向に対して直交する方向)において、すべての硬化性樹脂フィルム12の配置位置は同じであり、保護膜形成用シート2の幅方向における中間の位置と一致している。
支持シート21の幅の最大値D21は、硬化性樹脂フィルム12の幅の最大値、すなわち直径D12よりも大きい。ここでは、支持シート21の幅は、支持シート21の長手方向において一定であるため、支持シート21の幅の最大値は、単に支持シート21の幅を意味する。
支持シート21の第2領域212aの平面形状は、矩形から、複数個の直径D12の円を一列に取り除いた形状である。
例えば、図2に示す保護膜形成用シート1においては、図5に示すように、支持シート11の前記一方の面11aのうち、第2領域112a中に、支持シート11の外周部に沿って、帯状(ここでは円環状)の治具用接着剤層13が設けられていてもよい。治具用接着剤層13は、保護膜形成用シート1をリングフレーム等の治具に固定するための層である。
同様に、図4に示す保護膜形成用シート2においても、支持シート21の前記一方の面21aのうち、第2領域212a中に、硬化性樹脂フィルム12ごとに、硬化性樹脂フィルム12に接触せずに第1領域211aを囲む、環状の治具用接着剤層が設けられていてもよい。
保護膜形成用シートを構成する前記硬化性樹脂フィルムは、熱硬化性及びエネルギー線硬化性のいずれであってもよく、熱硬化性及びエネルギー線硬化性の両方の特性を有していてもよい。
本明細書において、「エネルギー線硬化性」とは、エネルギー線を照射することにより硬化する性質を意味する。
熱硬化性樹脂フィルム形成用組成物としては、例えば、重合体成分(A)と、熱硬化性成分(B)と、を含有する熱硬化性樹脂フィルム形成用組成物(III)(本明細書においては、単に「組成物(III)」と称することがある)等が挙げられる。
重合体成分(A)における前記ポリビニルアセタールとしては、公知のものが挙げられる。なかでも、好ましいポリビニルアセタールとしては、例えば、ポリビニルホルマール、ポリビニルブチラール等が挙げられ、ポリビニルブチラールがより好ましい。
前記他の成分としては、例えば、硬化促進剤(C)、充填材(D)、カップリング剤(E)、架橋剤(F)、エネルギー線硬化性樹脂(G)、光重合開始剤(H)、添加剤(I)、溶媒等が挙げられる。
充填材(D)は、有機充填材及び無機充填材のいずれであってもよいが、無機充填材であることが好ましい。好ましい無機充填材としては、例えば、シリカ、アルミナ、タルク、炭酸カルシウム、チタンホワイト、ベンガラ、炭化ケイ素、窒化ホウ素等の粉末;これら無機充填材を球形化したビーズ;これら無機充填材の表面改質品;これら無機充填材の単結晶繊維;ガラス繊維等が挙げられる。
これらの中でも、無機充填材は、シリカ又はアルミナであることが好ましい。
上述のGc1を適切に調節し、X値を容易に調節できる点で好ましい添加剤(I)としては、例えば、レオロジーコントロール剤、界面活性剤、シリコーンオイル等が挙げられる。
前記界面活性剤としては、例えば、変性シロキサン、アクリル重合体等が挙げられる。
前記シリコーンオイルとしては、例えば、アラルキル変性シリコーンオイル、変性ポリジメチルシロキサン等が挙げられ、変性基としては、アラルキル基;ヒドロキシ基等の極性基;ビニル基、フェニル基等の不飽和結合を有する基が挙げられる。
エネルギー線硬化性樹脂フィルム形成用組成物としては、例えば、エネルギー線硬化性成分(a)を含有するエネルギー線硬化性樹脂フィルム形成用組成物(IV)(本明細書においては、単に「組成物(IV)」と略記することがある)等が挙げられる。
前記他の成分としては、例えば、エネルギー線硬化性基を有しない重合体(b)、熱硬化性成分、充填材、カップリング剤、架橋剤、光重合開始剤、添加剤、溶媒等が挙げられる。
保護膜形成用シートを構成する前記支持シートは、公知のものであってよい。
例えば、前記基材のみからなる支持シートの構成材料としては、各種樹脂が挙げられる。
前記樹脂としては、例えば、ポリエチレン;ポリプロピレン等の、ポリエチレン以外のポリオレフィン;エチレン系共重合体(モノマーとしてエチレンを用いて得られた共重合体);塩化ビニル系樹脂(モノマーとして塩化ビニルを用いて得られた樹脂);ポリスチレン;ポリシクロオレフィン;ポリエステル;2種以上の前記ポリエステルの共重合体;ポリ(メタ)アクリル酸エステル;ポリウレタン;ポリウレタンアクリレート;ポリイミド;ポリアミド;ポリカーボネート;フッ素樹脂;ポリアセタール;変性ポリフェニレンオキシド;ポリフェニレンスルフィド;ポリスルホン;ポリエーテルケトン等が挙げられる。
また、前記樹脂としては、例えば、前記ポリエステルとそれ以外の樹脂との混合物等のポリマーアロイも挙げられる。
また、前記樹脂としては、例えば、ここまでに例示した前記樹脂の1種又は2種以上が架橋した架橋樹脂;ここまでに例示した前記樹脂の1種又は2種以上を用いたアイオノマー等の変性樹脂も挙げられる。
前記易剥離性の層としては、例えば、シリコーン系剥離剤、アルキッド系剥離剤等の剥離剤によって構成された層が挙げられる。
粘着シート中の前記基材としては、例えば、前記基材のみからなる支持シートと同じものが挙げられる。
粘着シート中の前記粘着剤層が含有する粘着剤としては、例えば、アクリル系粘着剤、ゴム系粘着剤、ウレタン系粘着剤等が挙げられる。粘着剤層は、エネルギー線の照射により粘着性が低下するものであってもよい。
粘着シート中の前記中間層が含有する成分としては、例えば、ウレタン(メタ)アクリレート化合物の硬化物、熱可塑性ポリオレフィン系樹脂(オレフィンから誘導された構成単位を有する熱可塑性樹脂)等が挙げられる。
ここでは、図2~図3に示す保護膜形成用シート1を用いた場合を例に挙げて説明するが、図4に示す保護膜形成用シート2や、その他の保護膜形成用シートを用い場合も、保護膜付きチップの製造方法の要旨は同じである。
工程(a)は、上述の保護膜形成用シート中の前記硬化性樹脂フィルムを、突起状電極を有するウエハの突起状電極を有する面に減圧環境下で貼付する。貼付の際、通常、硬化性樹脂フィルムは、流動性を増すように加熱される。
これにより、図6Aに示すように、保護膜形成用シート1と、保護膜形成用シート1中の硬化性樹脂フィルム12のうち、支持シート11側とは反対側の面12a上に設けられたウエハ9と、を備え、ウエハ9における突起状電極91の、前記面9a近傍の基部が、硬化性樹脂フィルム12によって被覆されて構成されている、保護膜形成用シート付きウエハ101が得られる。
なお、図6Aでは、突起状電極91の頭頂部まで硬化性樹脂フィルム12によって被覆された状態を示しているが、突起状電極91の頭頂部が硬化性樹脂フィルム12によって被覆されておらず、露出した状態であってもよい。また、支持シート11が、粘着シート又は治具用接着剤層を有する支持シートである場合には、支持シート11の周縁部が、リングフレーム等の治具(図示略)に貼付されていてもよい。
また、硬化性樹脂フィルム12のウエハ9ヘは貼付されていない領域のうち、周縁部近傍の領域において、低温となることがない。その結果、前記貼付工程において、硬化性樹脂フィルム12が、その厚さ方向における貼付時の圧力を受けることによって、ウエハ9の径方向外側向き(すなわち、図6A中の左向き、右向き又は左右向き)、すなわち、ウエハ9ヘ貼付されている領域(すなわち、支持シート11の第1領域111a上)から、ウエハ9ヘ貼付されていない領域(すなわち、支持シート11の第2領域112a上)に向けて流動したとしても、支持シート11の第2領域112a上において、硬化性樹脂フィルム12の厚さが厚くなった領域の形成を抑制できる。
支持シート11は、第1領域111aを有していればよく、第2領域112aを有さなくてもよい。
前記貼付工程においては、硬化性樹脂フィルム12のウエハ9の前記面9aへの貼付時に、硬化性樹脂フィルム12を前記溝90の一部又は全ての領域に充填する。図6Aでは、溝90の全ての領域に硬化性樹脂フィルム12が充填されている状態を示している。
本明細書において、「突起状電極の高さ」とは、突起状電極のうち、ウエハの突起状電極を有する面(すなわち、回路面)から最も高い位置に存在する部位での高さを意味する。
そして、前記貼付工程においては、このようなウエハ9を用い、硬化性樹脂フィルム12の前記面12a(すなわち、ウエハ9への貼付面)の全面を、ウエハ9の前記面9aに貼付することが好ましい。
このように、硬化性樹脂フィルム12の前記面12aの全面が、ウエハ9の前記面9aで覆われることで、支持シート11の第2領域112a上への硬化性樹脂フィルム12のはみ出し量をより低減でき、その結果、硬化性樹脂フィルム12のウエハヘ貼付されておらず、かつ厚さが厚くなった領域の形成を、より抑制できる。
工程(b)では、貼付後の前記硬化性樹脂フィルムを硬化させることによって、上記のウエハの前記面に保護膜を形成する。
保護膜付きウエハ102において、ウエハ9における突起状電極91の、前記面9a近傍の基部は、保護膜12’によって被覆されており、ウエハ9の溝90の全ての領域に保護膜12’が充填されている。
硬化性樹脂フィルム12の紫外線硬化時において、紫外線の照度は180~280mW/cm2であることが好ましく、紫外線の光量は450~1000mJ/cm2であることが好ましい。
後述する加工工程等の、チップの回路基板への接続までに行われる工程においても、突起状電極91を保護する観点、及び加工工程において、溝90内部の硬化樹脂フィルム12が硬化済みであることにより、加工工程の実施を容易にする観点等から、前記硬化工程は、加工工程よりも前に行われる。そして、通常、チップの回路形成面への接続は加工工程よりも後に行われる。そのため、保護膜付き半導体チップを回路基板の回路形成面に接続する前に、硬化性樹脂フィルムの硬化が行われる。換言すれば、前記硬化工程において、前記突起状電極を他の電極に接合させない状態で、硬化性樹脂フィルムを硬化させる。この点で、硬化性のフィルムをチップと回路形成面の間に介在させて、チップを回路形成面にマウントし、その後に硬化性のフィルムを硬化させる、いわゆるNCF(Nоn-Cоnductive Film)を用いた半導体チップの製造方法と、本実施形態に係る製造方法は本質的に相違するものである。
工程(b)では、前記保護膜を形成後の前記ウエハを分割し、前記保護膜を切断することにより、チップと、前記チップに設けられた切断後の前記保護膜と、を備えた保護膜付きチップを得る。
前記第2基材としては、前記第1基材と同様のものが挙げられる。
前記粘着剤層としては、エネルギー線硬化性又は非硬化性であるものが挙げられる。
本明細書において、「非硬化性」とは、加熱やエネルギー線の照射等、如何なる手段によっても、硬化しない性質を意味する。
保護膜付きチップ105は、公知の方法でピックアップできる。
粘着剤層が硬化性である場合には、粘着剤層の硬化後に、保護膜付きチップ105をピックアップすることで、より容易にピックアップできる。
この場合、支持シートを備え、前記支持シートの一方の面上に、保護膜を形成するための保護膜形成フィルムを備えて構成された、保護膜形成用シートを、ダイシングシート8に代えて用いることができる。ここで、前記支持シートは、基材及び粘着剤層を備えていてもよく、この場合には、その粘着剤層の基材側とは反対側の面上に、前記保護膜形成フィルムが設けられている。
前記保護膜形成用シートを用いる場合には、前記保護膜形成フィルムをチップ9’の裏面9b’に貼り合わせる。
さらに、この場合には、保護膜形成用シート中の支持シート(例えば、図2~図3に示す支持シート11、図4に示す支持シート21)を「第1支持シート」と称し、前記保護膜形成フィルムを備えた保護膜形成用シート中の支持シートを「第2支持シート」と称して、これら支持シートを区別する。支持シートが備えている粘着剤層についても同様であり、第1支持シート中の粘着剤層を「第1粘着剤層」と称し、第2支持シート中の粘着剤層を「第2粘着剤層」と称して、これら粘着剤層を区別する。
さらに、この場合には、保護膜形成用シートを用いて、前記硬化性樹脂フィルムから形成された保護膜(例えば、図6B等に示す保護膜12’)を「第1保護膜」と称し、前記保護膜形成フィルムから形成された保護膜(例えば、チップ9’の裏面9b’に設ける保護膜)を「第2保護膜」と称して、これら保護膜を区別する。
硬化性の前記保護膜形成フィルムは、熱硬化性及びエネルギー線硬化性のいずれであってもよく、熱硬化性及びエネルギー線硬化性の両方の特性を有していてもよい。
非硬化性の保護膜形成フィルムは、目的とする対象物(すなわちウエハ)に設けられた(形成された)段階以降、保護膜であるとみなす。
第2支持シートが硬化性の粘着剤層を備えている場合には、粘着剤層の硬化後に、保護膜付きチップ105をピックアップすることで、より容易にピックアップできる。
本実施形態の保護膜付きチップの製造方法は、前記貼付工程、硬化工程及び加工工程をこの順に有していれば、上述の製造方法(以下、「製造方法1」と称することがある)に限定されず、上述の製造方法(製造方法1)において、一部の構成が変更、削除又は追加されたものであってもよい。
製造方法2においても、製造方法1の場合と同様に、支持シート11が第2領域112a上を有する場合には、硬化性樹脂フィルム12の厚さが厚くなった領域の形成を抑制できる。
製造方法2においても、製造方法1の場合と同じ理由で、保護膜12’をチップ9’の外周(換言すると側面)に沿って切断するとき、隣り合うチップ9’間に充填されている保護膜12’を、チップ9’の外周(すなわち、側面)に沿って切断し、2つに分けることが好ましい。
また、製造方法2では、前記加工工程においてウエハを分割する前に、保護膜の表層部位をクリーニングによって取り除くことによって、突起状電極の上部を、保護膜を貫通させて突出(すなわち、露出)させる場合について、説明した。
本実施形態において、突起状電極の上部を突出させるタイミングは、これらに限定されず、前記減圧貼付工程における、硬化性樹脂フィルムのウエハへの貼付時から、前記加工工程における、ウエハの分割時又は保護膜の切断時までのいずれかの段階で、突起状電極の上部を突出させることができる。例えば、突起状電極の上部は、保護膜ではなく、硬化性樹脂フィルムを貫通させて突出させてもよい。
本実施形態においては、前記減圧貼付工程において、前記突起状電極の上部を、前記硬化性樹脂フィルムを貫通させて突出させるか、又は、前記加工工程において、前記突起状電極の上部を、前記保護膜を貫通させて突出させることが好ましい。
Claims (3)
- 支持シートと、支持シートの一方の面上に設けられた硬化性樹脂フィルムと、を備えた保護膜形成用シート中の前記硬化性樹脂フィルムを、突起状電極を有するウエハの突起状電極を有する面に減圧環境下で貼付する減圧貼付工程と、
貼付後の前記硬化性樹脂フィルムを硬化させることによって、上記のウエハの前記面に保護膜を形成する硬化工程と、
前記保護膜を形成後の前記ウエハを分割し、前記保護膜を切断することにより、チップと、前記チップに設けられた切断後の前記保護膜と、を備えた保護膜付きチップを得る加工工程と、を有し、
前記ウエハの前記面に、前記ウエハの分割箇所となる溝が形成されている、保護膜付きチップの製造方法。 - 前記保護膜形成用シートは、温度90℃、周波数1Hzの条件で、直径25mm、厚さ1mmの硬化性樹脂フィルムの試験片にひずみを発生させて、試験片の貯蔵弾性率を測定し、試験片のひずみが1%のときの試験片の貯蔵弾性率をGc1とし試験片のひずみが300%のときの試験片の貯蔵弾性率をGc300としたとき、下記式:
X=Gc1/Gc300
により算出されるX値が、19以上10000未満である、請求項1に記載の保護膜付きチップの製造方法。 - 前記減圧貼付工程において、前記突起状電極の上部を、前記硬化性樹脂フィルムを貫通して突出させるか、又は、前記加工工程において、前記突起状電極の上部を、前記保護膜を貫通させて突出させる、請求項1又は2に記載の保護膜付きチップの製造方法。
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JP2012169482A (ja) * | 2011-02-15 | 2012-09-06 | Nitto Denko Corp | 保護層形成用フィルム |
WO2014157329A1 (ja) * | 2013-03-27 | 2014-10-02 | リンテック株式会社 | 半導体チップの製造方法 |
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