WO2023222239A1 - Method for manufacturing an optoelectronic device and optolectronic device - Google Patents

Method for manufacturing an optoelectronic device and optolectronic device Download PDF

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Publication number
WO2023222239A1
WO2023222239A1 PCT/EP2022/063738 EP2022063738W WO2023222239A1 WO 2023222239 A1 WO2023222239 A1 WO 2023222239A1 EP 2022063738 W EP2022063738 W EP 2022063738W WO 2023222239 A1 WO2023222239 A1 WO 2023222239A1
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WO
WIPO (PCT)
Prior art keywords
solder material
carrier substrate
alignment
alignment posts
optoelectronic
Prior art date
Application number
PCT/EP2022/063738
Other languages
French (fr)
Inventor
Mathias Wendt
Christoph MANNAL
Robert Schulz
Original Assignee
Ams-Osram International Gmbh
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Publication date
Application filed by Ams-Osram International Gmbh filed Critical Ams-Osram International Gmbh
Priority to PCT/EP2022/063738 priority Critical patent/WO2023222239A1/en
Publication of WO2023222239A1 publication Critical patent/WO2023222239A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02375—Positioning of the laser chips

Definitions

  • the present invention concerns a method for manufacturing an optoelectronic device comprising a self-alignment of an optoelectronic component being applied to a carrier .
  • the present invention also concerns an optoelectronic device comprising a means for providing a self-alignment of an optoelectronic component on a carrier .
  • an optoelectronic device comprising a carrier substrate and optoelectronic components arranged on the carrier substrate
  • a stamp or the like for parallel die transfer of the optoelectronic components from a first substrate to the carrier substrate .
  • the components are placed directly on a solderable material (e . g . indium) .
  • the components are then bonded to the carrier substrate using the solderable material under heat and pressure , partly in order to break through a possibly occurring oxide layer located on the solderable material surface and partly to electrically and mechanically connect the components to the carrier substrate .
  • the components Due to the application of pressure in the process , the components can however slip or even break . On the other hand, without applying a pressure , tilting of the components can occur because the solderable material can melt unevenly . Also , the oxide layer poses a problem as it may interrupt the electrical connection between the components and the carrier substrate .
  • the concept is to use a self-aligning process to ensure a reliable positioning of optoelectronic components , and in particular small optoelectronic components such as p-LEDs , on a carrier substrate in combination with a pressure less bonding process .
  • the invention uses alignment post at least partially embedded in a carrier substrate , which comprise a material having better wetting properties with respect to a solder material than a surface of the carrier substrate surrounding the alignment posts , to centre the solder material in its liquid phase above the alignment posts .
  • the liquid solder simultaneously centres optoelectronic components placed on the solder material above the alignment posts .
  • the alignment posts eliminate a possible runout issue of the solder material during bonding as well as a possible breakage of the optoelectronic components compared to a regular bonding process which uses a pressure to realize an electrical as well as mechanical connection between the carrier substrate and the components .
  • Using a self-aligning process can, for example , compensate that in particular very small optoelectronic components , such as p-LEDs , can only be mounted on the carrier substrate with relative inaccuracy using known processes .
  • a further positive effect of the self-alignment can be that due to the liquif ication of the solder material a possibly occurring oxide layer located on the solder material surface can break and the optoelectronic components can form a good and reliable electrical connection with the solder material .
  • the self-alignment process and in particular the formation of the solder material after liquif ication can be set .
  • the degree to which self-alignment can take place with respect to a lateral displacement of the optoelectronic components , and to set that the optoelectronic components do not tilt or tilt only slightly during the self-alignment process .
  • an optoelectronic component with an edge length of 20pm and with a Gold metal contact surface can be aligned with a platinum alignment post with a diameter of 5pm, wherein the alignment post is embedded into an Indium-Tin-Oxide layer ( ITO ) , which is used as surrounding area for dewetting of a 300 nm thick Indium layer on top of the alignment post and the ITO-layer .
  • ITO Indium-Tin-Oxide layer
  • a method for manufacturing an optoelectronic device comprising the steps :
  • the alignment posts comprising a material having better wetting properties with respect to a solder material than a surface of the carrier substrate surrounding the alignment posts ;
  • solder material on the carrier substrate such that separate portions of the solder material are each deposited on a respective alignment post with a first cross section that is larger than a cross section of the respective alignment posts ; Placing an optoelectronic component on each of the separate portions of the solder material ;
  • the step of providing the solder material comprises : Depositing a structured photoresist layer on the carrier substrate , wherein the alignment posts and the surface of the carrier substrate surrounding the alignment posts are exposed;
  • the separate portions of the solder material are in particular deposited on a respective alignment post such that , when viewed in a plan view on the carrier substrate , the solder material covers not only the alignment posts but also an area of the carrier substrate surrounding the alignment posts .
  • the separate portions of the solder material thus comprise a first cross section that is larger than a cross section of the respective alignment posts .
  • a heating of the solder material above its melting temperature and thus a liquif ication of the solder material causes the solder material due to cohesion forces within the solder material to contract in the direction of the alignment posts forming a disc with a curved surface , like for example a lens , or a droplet .
  • the heating of the solder material above its melting temperature and thus a liquif ication of the solder material causes the solder material to reduce its cross section from a first cross section to a smaller second cross section, when viewed in a plan view on the carrier substrate .
  • cross-section with regard to the solder material , the alignment posts and the optoelectronic components is to be understood in particular as the area/ surface of the solder material , the alignment posts and the optoelectronic components respectively that is visible in the top view of the carrier substrate , or that results from a cut through the solder material , the alignment posts or the optoelectronic components along a plane that is parallel to a top surface of the carrier substrate .
  • the step of heating, and thus a liquif ication of the solder material causes in some aspects optoelectronic components that are off-centred relative to their respective alignment post to align with their respective alignment post .
  • optoelectronic components arranged on the solder material follow the movement of the solder material into the direction of the alignment posts due to surface tensions of the solder material resulting in a self-alignment of the optoelectronic components with the alignment posts .
  • the step of heating, and thus a liquif ication of the solder material causes separate portions of the solder material that are off- centred relative to their respective alignment post to align with their respective alignment post . Due to the step of heating , the solder material contracts in the direction of the alignment posts resulting in a self-alignment of the portions of the solder material with their respective alignment post .
  • the optoelectronic components are , for example , radiation-emitting optoelectronic semiconductor chips .
  • the semiconductor chips may be light emitting diode (LED ) chips or laser chips .
  • the optoelectronic semiconductor chips may generate light during operation .
  • the optoelectronic semiconductor chips generate light in the spectral range from UV radiation to light in the infrared range , in particular visible light .
  • the optoelectronic semiconductor chips are radiationdetecting semiconductor chips , for example photodiodes .
  • the optoelectronic components may for example comprise edge lengths of less than 100 pm, or less than 40 pm, and in particular less than 10pm, while a height of the optoelectronic components can for example be less than 25 pm, or less than 10 pm, and in particular less than 5pm .
  • the optoelectronic semiconductor chips can thus for example be p-LEDs ( LED for light emitting device , p-LED for micro-LED) or p-LED-chips .
  • the alignment posts are arranged in a matrix pattern on/in the carrier substrate .
  • the optoelectronic device can in particular be part of a display with a plurality of pixel arranged in rows and columns , wherein each one or several alignment posts are arranged on/ in the carrier substrate at a position relating to a pixel of the display .
  • the alignment posts comprise at least one of :
  • Such materials or material combinations can in particular have good wetting properties with respect to a solder material .
  • the alignment posts can in particular comprise a material , or material combination with a higher wettability with respect to a solder material than at least a surface of the carrier layer surrounding the alignment posts .
  • the carrier substrate can therefore comprise a material with a lower wettability with respect to the solder material , such as for example Indium Tin Oxide ( ITO ) , and/or the surface of the carrier layer surrounding the alignment posts can comprise a coating with a lower wettability with respect to the solder material .
  • the solder material comprise Indium, Tin or a combination thereof .
  • the solder material can however also comprise any other solderable materials known in the art which provide the respective properties with regard to the wettability of the alignment posts and the surface of the carrier layer surrounding the alignment posts .
  • the step of placing the optoelectronic components comprises a parallel die transfer process .
  • Such a process may be relatively inaccurate , particularly when placing very small optoelectronic components , such as p-LEDs , on a carrier substrate , and therefore subsequent self-alignment of the optoelectronic components on the carrier substrate may be desirable .
  • an optoelectronic device comprising a carrier substrate with a plurality of alignment posts at least partially embedded into the carrier substrate .
  • the alignment posts thereby comprise a material having better wetting properties with respect to a solder material than a surface of the carrier substrate surrounding the alignment posts .
  • On the alignment posts each a separate portion of a solder material is arranged, wherein a cross section of the portions of the solder material is larger than a cross section of the respective alignment posts , in particular when viewed in a plan view on the carrier substrate .
  • the optoelectronic device further comprises an optoelectronic component arranged on each of the separate portions of the solder material being electrically and mechanically connected to the solder material and thus to the carrier substrate .
  • the alignment posts can thereby in particular serve alone or in combination with an electric contact as electric contact for the optoelectronic components but can also serve only as alignment posts providing a self-alignment of the optoelectronic components during manufacture of the optoelectronic device without taking another task .
  • the centre of gravity of the optoelectronic components is each aligned with a respective alignment post , and in particular with the centre of gravity of a respective alignment post .
  • the optoelectronic components are thus each aligned with a respective alignment post .
  • the centre of gravity of the separate portions of the solder material is each aligned with a respective alignment post .
  • the separate portions of the solder material are thus each aligned with a respective alignment post .
  • the separate portions of the solder material are each arranged on a respective alignment post and extend partially onto the surface of the carrier substrate surrounding the alignment posts .
  • the separate portions of the solder material are thus not limited to the alignment posts , but can also extend partially onto the carrier substrate surrounding the alignment posts .
  • the separate portions of the solder material in particular when viewed in a plan view on the carrier substrate , each form a solder disc above a respective alignment post with a second cross section larger than a cross section of a respective optoelectronic component arranged on the separate portion of the solder material .
  • the separate portions of the solder material in some aspects thus comprise a larger cross section than a respective optoelectronic component arranged on the separate portion of the solder material .
  • the alignment posts are arranged in a matrix pattern on/in the carrier substrate .
  • the optoelectronic device can in particular be part of a display with a plurality of pixel arranged in rows and columns , wherein each one or several alignment posts are arranged on/in the carrier substrate at a position relating to a pixel of the display .
  • the alignment posts comprise at least one of :
  • Such materials or material combinations can in particular have good wetting properties with respect to a solder material .
  • the alignment posts can in particular comprise a material , or material combination with a higher wettability with respect to a solder material than at least a surface of the carrier layer surrounding the alignment posts .
  • the carrier substrate can therefore comprise a material with a lower wettability with respect to the solder material , such as for example Indium Tin Oxide ( ITO ) , and/or the surface of the carrier layer surrounding the alignment posts can comprise a coating with a lower wettability with respect to the solder material .
  • ITO Indium Tin Oxide
  • the solder material comprise Indium, Tin or a combination thereof .
  • the solder material can however also comprise any other solderable materials known in the art which provide the respective properties with regard to the wettability of the alignment posts and the surface of the carrier layer surrounding the alignment posts .
  • a self-alignment process of the optoelectronic components arranged on the solder material can be set during manufacture of the optoelectronic device in a desired way .
  • it is in particular possible to set the degree to which self-alignment can take place with respect to a lateral displacement of the optoelectronic components , and to set that the optoelectronic components do not tilt or tilt only slightly during the self-alignment process .
  • the resulting optoelectronic device can subsequently be characterized in particular by the fact that the optoelectronic components are each aligned with a respective alignment post and that a portion of solder material arranged in between to electrically and mechanically connect the optoelectronic components with the carrier substrate .
  • a width of the portions of the solder material can thereby for example be at least 2 times greater than a height of the portions of the solder material such that the portions of the solder material form something more like a disc with a greater width than height compared to a solder droplet .
  • the surface of the solder material facing the optoelectronic components can in some aspects be a curved surface , like for example of a lens , on top of which the optoelectronic component is arranged .
  • a tilting of the optoelectronic components on the solder material can be reduced or even omitted .
  • a lateral displacement , with respect to a respective alignment post , of an optoelectronic component arranged on a separate portion of the solder material is maximum two times the thickness of the solder material and in particular maximum the thickness of the solder material on which the optoelectronic component is arranged .
  • the thickness fluctuation of the separate portions of the solder material is smaller than 10% .
  • Figures 1A to 1C show steps of a method for manufacturing an optoelectronic device in accordance with some aspects of the proposed principle ;
  • Figures 2A and 2B illustrate each a detail view of steps of a method for manufacturing an optoelectronic device in accordance with some aspects of the proposed principle .
  • Figures 1A to 1C show steps of a method for manufacturing an optoelectronic device 1 in accordance with some aspects of the proposed principle .
  • a carrier substrate 2 is provided with a plurality of alignment posts 3 embedded into the carrier substrate 2 in defined distances to each other .
  • the alignment posts 3 are embedded into the carrier substrate 2 such that at least an upper surface of the alignment posts 3 is exposed from the carrier substrate 2 .
  • the position of the alignment posts 3 on/in the carrier substrate 2 can for example correlate to a desired pixel pitch and can be created relative accurate with regard to the pixel pitch using for example a photolithographic process .
  • the alignment posts 3 can for example be created in/on the carrier substrate 2 by depositing a structured photoresist layer on the carrier substrate , wherein areas of the carrier substrate 2 of the later alignment posts 3 are exposed, etching cavities into the carrier substrate 2 in the exposed areas , sputtering or gas phase depositing a material of the alignment posts 2 in the cavities and optionally on the remaining photoresist layer, and removing the structured photoresist layer and the optionally remaining material of the alignment posts on the photoresist layer, in particular by a lift off technique .
  • solder material 4 On top of the alignment posts 3 , and in particular on exposed surfaces of the alignment posts 3 , separate portions of a solder material 4 are arranged covering the exposed surfaces of the alignment posts 3 and a surface area of the carrier substrate 2 surrounding the alignment posts 3 .
  • the separate portions of the solder material 4 are disconnected from each other and can for example be deposited on the carrier substrate 2 depositing a structured photoresist layer on the carrier substate , wherein the alignment posts and the surface of the carrier substrate surrounding the alignment posts are exposed, sputtering or gas phase depositing the solder material on the exposed areas and optionally the remaining photoresist layer, and removing the structured photoresist layer and the optionally remaining solder material on the photoresist layer , in particular by a lift off technique .
  • the separate portions of the solder material 4 can thus also be created/deposited on the carrier substrate 2 relative accurate with regard to the pixel pitch .
  • the separate portions of the solder material 4 are dimensioned in such that they cover the exposed surfaces of the alignment posts 3 and a surface area of the carrier substrate 2 surrounding the alignment posts 3 . When viewed in plan view on the carrier substrate 2 , the separate portions of the solder material 4 thus have a larger cross section as a cross section of the alignment posts 2 . In addition to this , the separate portions of the solder material 4 comprise a small height compared to their length .
  • optoelectronic components 5 are placed on each a portions of the solder material 4 for example using a parallel die transfer process .
  • a parallel die transfer process As shown in Fig . IB, due to a relative inaccuracy of placing the optoelectronic components 5 with such a process , in particular if the optoelectronic components 5 are very small optoelectronic components 5 such as p-LEDs , some of the optoelectronic components can be arranged off-centred with regard to the alignment posts 3 and thus with regard to the desired pixel pitch .
  • the portions of the solder material 4 can therefore be dimensioned relatively large , to ensure that despite the inaccuracy of placing the optoelectronic components 5 the optoelectronic components 5 are nevertheless placed at least on a respective portion of the solder material 4 in any case .
  • the portions of the solder material 4 liquefy .
  • the alignment posts 3 comprise a material having better wetting properties with respect to the solder material 4 than the surface of the carrier substrate 2 surrounding the alignment posts 3
  • the solder material 4 due to cohesion forces within the solder material 4 then contracts in the direction of the alignment posts 3 forming , when viewed in a plan view on the carrier substrate , a disc with a smaller cross section than its cross section before heating .
  • the contraction of the solder material 4 in the direction of the alignment posts 3 at the same time causes the optoelectronic components 5 to do the same movement as the solder material and to align with the alignment posts 3 .
  • the portions of the solder material 4 are aligned with the alignment posts 3 now having a smaller cross section, when viewed in a plan view on the carrier substrate , but a larger height compared to before heating the same and the optoelectronic components 5 are compared to Fig . IB aligned with the alignment posts 3 and thus with the desired pixel pitch .
  • the portions of the solder material 4 according to the figure still protrude the alignment posts 3 , but it can also be that the solder material contracts completely to the size of the alignment posts 3 , when viewed in a plan view on the carrier substrate .
  • Figs . 2A and 2B each show a detailed view of only one optoelectronic component 5 undergoing a self-alignment in accordance with some aspects of the proposed principle .
  • the optoelectronic component 5 is , as shown in Fig . 2A, arranged off-centred with regard to the alignment posts 3 on a portion of the solder material 4 after placing the same on the solder material 4 .
  • the size of the alignment post 3 By choosing the size of the alignment post 3 , the amount of solder material 4 on the alignment post 3 , and the wetting properties of the alignment post 3 , the surface of the carrier substrate 2 surrounding the alignment post 3 , and an electric contact 6 of the optoelectronic component 5 contacting the solder material 4 , a self- alignment process and in particular a contraction of the solder material after heating of the solder material can be set , to align the solder material 4 and coming with this the optoelectronic component 5 properly with regard to the alignment post 3 .
  • the self-alignment process and in particular the contraction of the solder material after heating of the solder material causes the height of the portion of the solder material 4 to increase while the length/cross section of the portion of the solder material 4 gets smaller ( see comparison of Fig . 2A and 2B ) .
  • This movement in form of a contraction of the solder material 4 in the direction of the alignment post 3 causes the optoelectronic component 5 at the same time to move in the left direction due to surface tensions in the solder material 4 and to align substantially with the alignment post 3 .
  • the proposed principle can in particular be suitable for especially small optoelectronic components such as p-LEDs , as a reliable and accurate direct placement of such components can be very difficult .
  • Such p-LEDs can for example comprise edge lengths of less than 100 pm, or less than 40 pm, and in particular less than 10pm, while a height of the optoelectronic components can for example be less than 25 pm, or less than 10 pm, and in particular less than 5pm.
  • the solder material for such an optoelectronic component can in the final optoelectronic device 1 for example comprise a height of 50 to 500 nm and can wet the whole electric contact 6 of the optoelectronic component 5 .

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

The invention concerns a method for manufacturing an optoelectronic device comprising the steps: Providing a carrier substrate with a plurality of alignment posts at least partially embedded into the carrier substrate, wherein the alignment posts comprise a material having better wetting properties with respect to a solder material than a surface of the carrier substrate surrounding the alignment posts; Providing the solder material on the carrier substrate, such that separate portions of the solder material are each deposited on the alignment posts with a first cross section that is larger than a cross section of the respective alignment posts; Placing an optoelectronic component on each of the separate portions of the solder material; and Heating the solder material above its melting temperature such that the separate portions of the solder material each form a solder disc above the assigned alignment post with a second cross section smaller than the first cross section.

Description

METHOD FOR MANUFACTURING AN OPTOELECTRONIC DEVICE AND OPTOLECTRONIC
DEVICE
The present invention concerns a method for manufacturing an optoelectronic device comprising a self-alignment of an optoelectronic component being applied to a carrier . The present invention also concerns an optoelectronic device comprising a means for providing a self-alignment of an optoelectronic component on a carrier .
BACKGROUND
For manufacturing an optoelectronic device comprising a carrier substrate and optoelectronic components arranged on the carrier substrate , it is often used a stamp or the like for parallel die transfer of the optoelectronic components from a first substrate to the carrier substrate . For example , the components are placed directly on a solderable material ( e . g . indium) . The components are then bonded to the carrier substrate using the solderable material under heat and pressure , partly in order to break through a possibly occurring oxide layer located on the solderable material surface and partly to electrically and mechanically connect the components to the carrier substrate .
With such a process it is however difficult , in particular for very small optoelectronic components , to place the components with good placement accuracy, without runout of the solderable material and, to omit a breakage of the components , without a pressure application .
Due to the application of pressure in the process , the components can however slip or even break . On the other hand, without applying a pressure , tilting of the components can occur because the solderable material can melt unevenly . Also , the oxide layer poses a problem as it may interrupt the electrical connection between the components and the carrier substrate .
It is thus an obj ect of the present application to counteract at least one of the aforementioned problems and to provide an enhanced method for manufacturing an optoelectronic device and an optoelectronic device in which optoelectronic components are bonded to a carrier substrate with a high positioning accuracy and in particular without a pressure application to omit a breakage of the components .
SUMMARY OF THE INVENTION
This and other obj ects are addressed by the subj ect matter of the independent claims . Features and further aspects of the proposed principles are outlined in the dependent claims .
The concept , the inventors propose , is to use a self-aligning process to ensure a reliable positioning of optoelectronic components , and in particular small optoelectronic components such as p-LEDs , on a carrier substrate in combination with a pressure less bonding process . The invention uses alignment post at least partially embedded in a carrier substrate , which comprise a material having better wetting properties with respect to a solder material than a surface of the carrier substrate surrounding the alignment posts , to centre the solder material in its liquid phase above the alignment posts . The liquid solder simultaneously centres optoelectronic components placed on the solder material above the alignment posts . The alignment posts eliminate a possible runout issue of the solder material during bonding as well as a possible breakage of the optoelectronic components compared to a regular bonding process which uses a pressure to realize an electrical as well as mechanical connection between the carrier substrate and the components .
Using a self-aligning process can, for example , compensate that in particular very small optoelectronic components , such as p-LEDs , can only be mounted on the carrier substrate with relative inaccuracy using known processes . By dimensioning a solder material and in particular portions of a solder material above the alignment post in such that even due to a placement inaccuracy of the optoelectronic components the optoelectronic components at least in all likelihood are placed on the solder material and the self-alignment can compensate the inaccuracy by aligning the optoelectronic components with the alignment posts .
A further positive effect of the self-alignment can be that due to the liquif ication of the solder material a possibly occurring oxide layer located on the solder material surface can break and the optoelectronic components can form a good and reliable electrical connection with the solder material .
By varying the size of the alignment posts , the amount of solder material on the alignment posts , and the wetting properties of the alignment post , the surface of the carrier substrate surrounding the alignment posts , and the surface of the optoelectronic components contacting the solder material , the self-alignment process and in particular the formation of the solder material after liquif ication can be set . By this it is in particular possible , to set the degree to which self-alignment can take place with respect to a lateral displacement of the optoelectronic components , and to set that the optoelectronic components do not tilt or tilt only slightly during the self-alignment process . For example , an optoelectronic component with an edge length of 20pm and with a Gold metal contact surface can be aligned with a platinum alignment post with a diameter of 5pm, wherein the alignment post is embedded into an Indium-Tin-Oxide layer ( ITO ) , which is used as surrounding area for dewetting of a 300 nm thick Indium layer on top of the alignment post and the ITO-layer .
In one aspect , a method for manufacturing an optoelectronic device is provided comprising the steps :
Providing a carrier substrate with a plurality of alignment posts at least partially embedded into the carrier substrate , the alignment posts comprising a material having better wetting properties with respect to a solder material than a surface of the carrier substrate surrounding the alignment posts ;
Providing the solder material on the carrier substrate , such that separate portions of the solder material are each deposited on a respective alignment post with a first cross section that is larger than a cross section of the respective alignment posts ; Placing an optoelectronic component on each of the separate portions of the solder material ; and
Heating the solder material above its melting temperature such that the separate portions of the solder material each form a solder disc above its respective alignment post with a second cross section smaller than the first cross section .
In some aspects , the step of providing the solder material comprises : Depositing a structured photoresist layer on the carrier substrate , wherein the alignment posts and the surface of the carrier substrate surrounding the alignment posts are exposed;
Sputtering or gas phase depositing the solder material on the exposed areas and optionally the remaining photoresist layer ; and Removing the structured photoresist layer and the optionally remaining solder material on the photoresist layer, in particular by a lift off technique .
The separate portions of the solder material are in particular deposited on a respective alignment post such that , when viewed in a plan view on the carrier substrate , the solder material covers not only the alignment posts but also an area of the carrier substrate surrounding the alignment posts . When viewed in a plan view on the carrier substrate , the separate portions of the solder material thus comprise a first cross section that is larger than a cross section of the respective alignment posts . In combination with the fact that the alignment posts comprise a material having better wetting properties with respect to the solder material than the surface of the carrier substrate surrounding the alignment posts , a heating of the solder material above its melting temperature and thus a liquif ication of the solder material causes the solder material due to cohesion forces within the solder material to contract in the direction of the alignment posts forming a disc with a curved surface , like for example a lens , or a droplet . Hence the heating of the solder material above its melting temperature and thus a liquif ication of the solder material causes the solder material to reduce its cross section from a first cross section to a smaller second cross section, when viewed in a plan view on the carrier substrate . In this context , the term "cross-section" with regard to the solder material , the alignment posts and the optoelectronic components is to be understood in particular as the area/ surface of the solder material , the alignment posts and the optoelectronic components respectively that is visible in the top view of the carrier substrate , or that results from a cut through the solder material , the alignment posts or the optoelectronic components along a plane that is parallel to a top surface of the carrier substrate .
At the same time the step of heating, and thus a liquif ication of the solder material causes in some aspects optoelectronic components that are off-centred relative to their respective alignment post to align with their respective alignment post . As the solder material due to the step of heating contracts in the direction of the alignment posts , optoelectronic components arranged on the solder material follow the movement of the solder material into the direction of the alignment posts due to surface tensions of the solder material resulting in a self-alignment of the optoelectronic components with the alignment posts .
The same applies in some aspects to the separate portions of the solder material . The step of heating, and thus a liquif ication of the solder material causes separate portions of the solder material that are off- centred relative to their respective alignment post to align with their respective alignment post . Due to the step of heating , the solder material contracts in the direction of the alignment posts resulting in a self-alignment of the portions of the solder material with their respective alignment post .
The optoelectronic components are , for example , radiation-emitting optoelectronic semiconductor chips . For example , the semiconductor chips may be light emitting diode (LED ) chips or laser chips . The optoelectronic semiconductor chips may generate light during operation . In particular , it is possible that the optoelectronic semiconductor chips generate light in the spectral range from UV radiation to light in the infrared range , in particular visible light . Alternatively, it is possible that the optoelectronic semiconductor chips are radiationdetecting semiconductor chips , for example photodiodes .
The optoelectronic components may for example comprise edge lengths of less than 100 pm, or less than 40 pm, and in particular less than 10pm, while a height of the optoelectronic components can for example be less than 25 pm, or less than 10 pm, and in particular less than 5pm . The optoelectronic semiconductor chips can thus for example be p-LEDs ( LED for light emitting device , p-LED for micro-LED) or p-LED-chips .
In some aspects , the alignment posts are arranged in a matrix pattern on/in the carrier substrate . The optoelectronic device can in particular be part of a display with a plurality of pixel arranged in rows and columns , wherein each one or several alignment posts are arranged on/ in the carrier substrate at a position relating to a pixel of the display . in some aspects , the alignment posts comprise at least one of :
- Indium;
- Nickel ;
- Tin;
- Palladium;
- Platinum; and
- Copper .
Such materials or material combinations can in particular have good wetting properties with respect to a solder material . The alignment posts can in particular comprise a material , or material combination with a higher wettability with respect to a solder material than at least a surface of the carrier layer surrounding the alignment posts . The carrier substrate can therefore comprise a material with a lower wettability with respect to the solder material , such as for example Indium Tin Oxide ( ITO ) , and/or the surface of the carrier layer surrounding the alignment posts can comprise a coating with a lower wettability with respect to the solder material . In some aspects , the solder material comprise Indium, Tin or a combination thereof . The solder material can however also comprise any other solderable materials known in the art which provide the respective properties with regard to the wettability of the alignment posts and the surface of the carrier layer surrounding the alignment posts .
In some aspects , the step of placing the optoelectronic components comprises a parallel die transfer process . Such a process may be relatively inaccurate , particularly when placing very small optoelectronic components , such as p-LEDs , on a carrier substrate , and therefore subsequent self-alignment of the optoelectronic components on the carrier substrate may be desirable .
Some other aspects concern an optoelectronic device comprising a carrier substrate with a plurality of alignment posts at least partially embedded into the carrier substrate . The alignment posts thereby comprise a material having better wetting properties with respect to a solder material than a surface of the carrier substrate surrounding the alignment posts . On the alignment posts each a separate portion of a solder material is arranged, wherein a cross section of the portions of the solder material is larger than a cross section of the respective alignment posts , in particular when viewed in a plan view on the carrier substrate . The optoelectronic device further comprises an optoelectronic component arranged on each of the separate portions of the solder material being electrically and mechanically connected to the solder material and thus to the carrier substrate .
The alignment posts can thereby in particular serve alone or in combination with an electric contact as electric contact for the optoelectronic components but can also serve only as alignment posts providing a self-alignment of the optoelectronic components during manufacture of the optoelectronic device without taking another task .
In some aspects , the centre of gravity of the optoelectronic components is each aligned with a respective alignment post , and in particular with the centre of gravity of a respective alignment post . The optoelectronic components are thus each aligned with a respective alignment post .
In some aspects , the centre of gravity of the separate portions of the solder material is each aligned with a respective alignment post . The separate portions of the solder material are thus each aligned with a respective alignment post .
In some aspects , the separate portions of the solder material are each arranged on a respective alignment post and extend partially onto the surface of the carrier substrate surrounding the alignment posts . The separate portions of the solder material are thus not limited to the alignment posts , but can also extend partially onto the carrier substrate surrounding the alignment posts .
In some aspects , the separate portions of the solder material , in particular when viewed in a plan view on the carrier substrate , each form a solder disc above a respective alignment post with a second cross section larger than a cross section of a respective optoelectronic component arranged on the separate portion of the solder material . When viewed in a plan view on the carrier substrate , the separate portions of the solder material in some aspects thus comprise a larger cross section than a respective optoelectronic component arranged on the separate portion of the solder material .
In some aspects , the alignment posts are arranged in a matrix pattern on/in the carrier substrate . The optoelectronic device can in particular be part of a display with a plurality of pixel arranged in rows and columns , wherein each one or several alignment posts are arranged on/in the carrier substrate at a position relating to a pixel of the display .
In some aspects , the alignment posts comprise at least one of :
- Indium;
- Nickel ;
- Tin;
- Palladium; - Platinum; and
- Copper .
Such materials or material combinations can in particular have good wetting properties with respect to a solder material . The alignment posts can in particular comprise a material , or material combination with a higher wettability with respect to a solder material than at least a surface of the carrier layer surrounding the alignment posts . The carrier substrate can therefore comprise a material with a lower wettability with respect to the solder material , such as for example Indium Tin Oxide ( ITO ) , and/or the surface of the carrier layer surrounding the alignment posts can comprise a coating with a lower wettability with respect to the solder material .
In some aspects , the solder material comprise Indium, Tin or a combination thereof . The solder material can however also comprise any other solderable materials known in the art which provide the respective properties with regard to the wettability of the alignment posts and the surface of the carrier layer surrounding the alignment posts .
By choosing the size of the alignment posts , the amount of solder material on the alignment posts , and the wetting properties of the alignment post , the surface of the carrier substrate surrounding the alignment posts , and the surface of the optoelectronic components contacting the solder material , a self-alignment process of the optoelectronic components arranged on the solder material can be set during manufacture of the optoelectronic device in a desired way . By changing aforementioned parameters , it is in particular possible , to set the degree to which self-alignment can take place with respect to a lateral displacement of the optoelectronic components , and to set that the optoelectronic components do not tilt or tilt only slightly during the self-alignment process . The resulting optoelectronic device can subsequently be characterized in particular by the fact that the optoelectronic components are each aligned with a respective alignment post and that a portion of solder material arranged in between to electrically and mechanically connect the optoelectronic components with the carrier substrate . A width of the portions of the solder material can thereby for example be at least 2 times greater than a height of the portions of the solder material such that the portions of the solder material form something more like a disc with a greater width than height compared to a solder droplet . The surface of the solder material facing the optoelectronic components can in some aspects be a curved surface , like for example of a lens , on top of which the optoelectronic component is arranged . In combination with the solder material forming something more like a disc with a greater width than height compared to a droplet , a tilting of the optoelectronic components on the solder material can be reduced or even omitted .
In some aspects , a lateral displacement , with respect to a respective alignment post , of an optoelectronic component arranged on a separate portion of the solder material is maximum two times the thickness of the solder material and in particular maximum the thickness of the solder material on which the optoelectronic component is arranged .
In some aspects , in at least one cross-section, the thickness fluctuation of the separate portions of the solder material is smaller than 10% .
SHORT DESCRIPTION OF THE DRAWINGS
Further aspects and embodiments in accordance with the proposed principle will become apparent in relation to the various embodiments and examples described in detail in connection with the accompanying drawings in which
Figures 1A to 1C show steps of a method for manufacturing an optoelectronic device in accordance with some aspects of the proposed principle ; and
Figures 2A and 2B illustrate each a detail view of steps of a method for manufacturing an optoelectronic device in accordance with some aspects of the proposed principle . DETAILED DESCRIPTION
The following embodiments and examples disclose various aspects and their combinations according to the proposed principle . The embodiments and examples are not always to scale . Likewise , different elements can be displayed enlarged or reduced in size to emphasize individual aspects . It goes without saying that the individual aspects of the embodiments and examples shown in the figures can be combined with each other without further ado , without this contradicting the principle according to the invention . Some aspects show a regular structure or form. It should be noted that in practice slight differences and deviations from the ideal form may occur without , however, contradicting the inventive idea .
In addition, the individual figures and aspects are not necessarily shown in the correct size , nor do the proportions between individual elements have to be essentially correct . Some aspects are highlighted by showing them enlarged . However , terms such as "above" , "over" , "below" , "under" "larger" , "smaller" and the like are correctly represented with regard to the elements in the figures . So it is possible to deduce such relations between the elements based on the figures .
Figures 1A to 1C show steps of a method for manufacturing an optoelectronic device 1 in accordance with some aspects of the proposed principle . In a first step , as shown in Fig . 1A, a carrier substrate 2 is provided with a plurality of alignment posts 3 embedded into the carrier substrate 2 in defined distances to each other . The alignment posts 3 are embedded into the carrier substrate 2 such that at least an upper surface of the alignment posts 3 is exposed from the carrier substrate 2 . The position of the alignment posts 3 on/in the carrier substrate 2 can for example correlate to a desired pixel pitch and can be created relative accurate with regard to the pixel pitch using for example a photolithographic process .
The alignment posts 3 can for example be created in/on the carrier substrate 2 by depositing a structured photoresist layer on the carrier substrate , wherein areas of the carrier substrate 2 of the later alignment posts 3 are exposed, etching cavities into the carrier substrate 2 in the exposed areas , sputtering or gas phase depositing a material of the alignment posts 2 in the cavities and optionally on the remaining photoresist layer, and removing the structured photoresist layer and the optionally remaining material of the alignment posts on the photoresist layer, in particular by a lift off technique .
On top of the alignment posts 3 , and in particular on exposed surfaces of the alignment posts 3 , separate portions of a solder material 4 are arranged covering the exposed surfaces of the alignment posts 3 and a surface area of the carrier substrate 2 surrounding the alignment posts 3 . The separate portions of the solder material 4 are disconnected from each other and can for example be deposited on the carrier substrate 2 depositing a structured photoresist layer on the carrier substate , wherein the alignment posts and the surface of the carrier substrate surrounding the alignment posts are exposed, sputtering or gas phase depositing the solder material on the exposed areas and optionally the remaining photoresist layer, and removing the structured photoresist layer and the optionally remaining solder material on the photoresist layer , in particular by a lift off technique . The separate portions of the solder material 4 can thus also be created/deposited on the carrier substrate 2 relative accurate with regard to the pixel pitch .
The separate portions of the solder material 4 are dimensioned in such that they cover the exposed surfaces of the alignment posts 3 and a surface area of the carrier substrate 2 surrounding the alignment posts 3 . When viewed in plan view on the carrier substrate 2 , the separate portions of the solder material 4 thus have a larger cross section as a cross section of the alignment posts 2 . In addition to this , the separate portions of the solder material 4 comprise a small height compared to their length .
In a next step, as shown in Fig . IB, optoelectronic components 5 are placed on each a portions of the solder material 4 for example using a parallel die transfer process . As shown in Fig . IB, due to a relative inaccuracy of placing the optoelectronic components 5 with such a process , in particular if the optoelectronic components 5 are very small optoelectronic components 5 such as p-LEDs , some of the optoelectronic components can be arranged off-centred with regard to the alignment posts 3 and thus with regard to the desired pixel pitch . The portions of the solder material 4 can therefore be dimensioned relatively large , to ensure that despite the inaccuracy of placing the optoelectronic components 5 the optoelectronic components 5 are nevertheless placed at least on a respective portion of the solder material 4 in any case .
If the solder material 4 is now heated, the portions of the solder material 4 liquefy . As the alignment posts 3 comprise a material having better wetting properties with respect to the solder material 4 than the surface of the carrier substrate 2 surrounding the alignment posts 3 , the solder material 4 due to cohesion forces within the solder material 4 then contracts in the direction of the alignment posts 3 forming , when viewed in a plan view on the carrier substrate , a disc with a smaller cross section than its cross section before heating . The contraction of the solder material 4 in the direction of the alignment posts 3 at the same time causes the optoelectronic components 5 to do the same movement as the solder material and to align with the alignment posts 3 .
As a result , as shown in Fig . 1C , the portions of the solder material 4 are aligned with the alignment posts 3 now having a smaller cross section, when viewed in a plan view on the carrier substrate , but a larger height compared to before heating the same and the optoelectronic components 5 are compared to Fig . IB aligned with the alignment posts 3 and thus with the desired pixel pitch . The portions of the solder material 4 according to the figure still protrude the alignment posts 3 , but it can also be that the solder material contracts completely to the size of the alignment posts 3 , when viewed in a plan view on the carrier substrate .
Figs . 2A and 2B each show a detailed view of only one optoelectronic component 5 undergoing a self-alignment in accordance with some aspects of the proposed principle . The optoelectronic component 5 is , as shown in Fig . 2A, arranged off-centred with regard to the alignment posts 3 on a portion of the solder material 4 after placing the same on the solder material 4 . By choosing the size of the alignment post 3 , the amount of solder material 4 on the alignment post 3 , and the wetting properties of the alignment post 3 , the surface of the carrier substrate 2 surrounding the alignment post 3 , and an electric contact 6 of the optoelectronic component 5 contacting the solder material 4 , a self- alignment process and in particular a contraction of the solder material after heating of the solder material can be set , to align the solder material 4 and coming with this the optoelectronic component 5 properly with regard to the alignment post 3 .
The self-alignment process and in particular the contraction of the solder material after heating of the solder material causes the height of the portion of the solder material 4 to increase while the length/cross section of the portion of the solder material 4 gets smaller ( see comparison of Fig . 2A and 2B ) . This movement in form of a contraction of the solder material 4 in the direction of the alignment post 3 causes the optoelectronic component 5 at the same time to move in the left direction due to surface tensions in the solder material 4 and to align substantially with the alignment post 3 .
The proposed principle can in particular be suitable for especially small optoelectronic components such as p-LEDs , as a reliable and accurate direct placement of such components can be very difficult . Such p-LEDs can for example comprise edge lengths of less than 100 pm, or less than 40 pm, and in particular less than 10pm, while a height of the optoelectronic components can for example be less than 25 pm, or less than 10 pm, and in particular less than 5pm. The solder material for such an optoelectronic component can in the final optoelectronic device 1 for example comprise a height of 50 to 500 nm and can wet the whole electric contact 6 of the optoelectronic component 5 . LIST OF REFERENCES
1 optoelectronic device 2 carrier substrate
3 alignment post
4 solder material
5 optoelectronic component
6 electric contact

Claims

CLAIMS Method for manufacturing an optoelectronic device (1) comprising the steps :
Providing a carrier substrate (2) with a plurality of alignment posts (3) at least partially embedded into the carrier substrate (2) , wherein the alignment posts (3) comprise a material having better wetting properties with respect to a solder material (4) than a surface of the carrier substrate (2) surrounding the alignment posts (3) ;
Providing the solder material (4) on the carrier substrate (2) , such that separate portions of the solder material (4) are each deposited on a respective alignment post (3) with a first cross section that is larger than a cross section of the respective alignment post;
Placing an optoelectronic component (5) on each of the separate portions of the solder material (4) ; and
Heating the solder material (4) above its melting temperature such that the separate portions of the solder material (4) each form a solder disc above the respective alignment post (3) with a second cross section smaller than the first cross section. The method according to claim 1, wherein the step of providing the solder material comprises :
Depositing a structured photoresist layer, wherein the alignment posts (3) and the surface of the carrier substrate (2) surrounding the alignment posts (3) are exposed; depositing the solder material (4) , in particular by sputtering or gas phase depositing; and
Removing the structured photoresist layer, in particular by a lift off technique. The method according to claim 1 or 2, wherein the step of heating causes optoelectronic components (5) that are off-centred relative to their respective alignment post (3) to align with their respective alignment post (3) . The method according to any one of claims 1 to 3, wherein the step of heating causes separate portions of the solder material (4) that are off-centred relative to their respective alignment post (3) to align with their respective alignment post (3) . The method according to any one of claims 1 to 4, wherein the alignment posts (3) are arranged in a matrix pattern. The method according to any one of claims 1 to 5, wherein the alignment posts (3) comprise at least one of:
- Indium;
- Nickel;
- Tin;
- Palladium;
- Platinum; and
- Copper. The method according to any one of claims 1 to 6, wherein the solder material (4) comprise at least one of:
Indium; and
Tin. The method according to any one of claims 1 to 7, wherein the step of placing the optoelectronic components (5) comprises a parallel die transfer process. An optoelectronic device (1) comprising: a carrier substrate (2) with a plurality of alignment posts (3) at least partially embedded into the carrier substrate (2) ; separate portions of a solder material (4) each arranged on a respective alignment post (3) , wherein a cross section of the portions of the solder material (4) is larger than a cross section of the respective alignment posts (3) ; and an optoelectronic component (5) on each of the separate portions of the solder material (4) ; wherein the alignment posts (3) comprise a material having better wetting properties with respect to the solder material (4) than a surface of the carrier substrate
(2) surrounding the alignment posts
(3) . The optoelectronic device according to claim 9, wherein the centre of gravity of the optoelectronic components (5) is each aligned with a respective alignment post (3) . The optoelectronic device according to claim 9 or 10, wherein the centre of gravity of the separate portions of the solder material (4) is each aligned with a respective alignment post (3) . The optoelectronic device according to any one of claims 9 to 11, wherein the separate portions of the solder material (4) are each arranged on a respective alignment post (3) and extend partially onto the surface of the carrier substrate (2) surrounding the alignment posts (3) . The optoelectronic device according to any one of claims 9 to 12, wherein the separate portions of the solder material (4) each form a solder disc above a respective alignment post (3) with a second cross section larger than a cross section of a respective optoelectronic component (5) arranged on the separate portion of the solder material (4) . The optoelectronic device according to any one of claims 9 to 13, wherein the alignment posts (3) are arranged in a matrix pattern. The optoelectronic device according to any one of claims 9 to 14, wherein the alignment posts (3) comprise at least one of:
- Indium;
- Nickel;
- Tin;
- Palladium;
- Platinum; and
- Copper. The optoelectronic device according to any one of claims 9 to 15, wherein a width of the portions of the solder material (4) is at least 2 times greater than a height of the portions of the solder material ( 4 ) . The optoelectronic device according to any one of claims 9 to 16 , wherein the optoelectronic components ( 5 ) are p-LEDs .
PCT/EP2022/063738 2022-05-20 2022-05-20 Method for manufacturing an optoelectronic device and optolectronic device WO2023222239A1 (en)

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Citations (5)

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Publication number Priority date Publication date Assignee Title
US20130126891A1 (en) * 2011-11-18 2013-05-23 Andreas Bibl Micro light emitting diode
EP2688093A1 (en) * 2012-07-19 2014-01-22 Technische Universität Ilmenau Method of and apparatus for self-assembly of components on a substrate
US20150223346A1 (en) * 2012-08-02 2015-08-06 Osram Sylvania Inc. Dual solder layer for fluidic self assembly and electrical component substrate and method employing same
US20170373228A1 (en) * 2015-01-30 2017-12-28 Apple Inc. Micro-light emitting diode with metal side mirror
US20210320088A1 (en) * 2020-04-08 2021-10-14 Asti Global Inc., Taiwan Led chip initial structure, substrate structure, chip transferring method and image display device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130126891A1 (en) * 2011-11-18 2013-05-23 Andreas Bibl Micro light emitting diode
EP2688093A1 (en) * 2012-07-19 2014-01-22 Technische Universität Ilmenau Method of and apparatus for self-assembly of components on a substrate
US20150223346A1 (en) * 2012-08-02 2015-08-06 Osram Sylvania Inc. Dual solder layer for fluidic self assembly and electrical component substrate and method employing same
US20170373228A1 (en) * 2015-01-30 2017-12-28 Apple Inc. Micro-light emitting diode with metal side mirror
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