WO2023216652A1 - 一种双面太阳能电池及其制备方法 - Google Patents
一种双面太阳能电池及其制备方法 Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 162
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 162
- 239000010703 silicon Substances 0.000 claims abstract description 162
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 76
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical group [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 23
- 238000000137 annealing Methods 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 21
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 20
- 239000002994 raw material Substances 0.000 claims description 16
- 229910052698 phosphorus Inorganic materials 0.000 claims description 14
- 239000011574 phosphorus Substances 0.000 claims description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 11
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 11
- 229910052796 boron Inorganic materials 0.000 claims description 11
- 229910000077 silane Inorganic materials 0.000 claims description 11
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 239000007800 oxidant agent Substances 0.000 claims description 7
- 230000003667 anti-reflective effect Effects 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 6
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 6
- 239000005922 Phosphane Substances 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 235000013842 nitrous oxide Nutrition 0.000 claims description 5
- 229910000064 phosphane Inorganic materials 0.000 claims description 5
- XYFCBTPGUUZFHI-UHFFFAOYSA-N phosphane group Chemical group P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- UXCDUFKZSUBXGM-UHFFFAOYSA-N phosphoric tribromide Chemical compound BrP(Br)(Br)=O UXCDUFKZSUBXGM-UHFFFAOYSA-N 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims 1
- KBMBVTRWEAAZEY-UHFFFAOYSA-N trisulfane Chemical compound SSS KBMBVTRWEAAZEY-UHFFFAOYSA-N 0.000 claims 1
- 238000002679 ablation Methods 0.000 abstract description 11
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 239000005388 borosilicate glass Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
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- 150000002431 hydrogen Chemical class 0.000 description 1
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- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
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- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present application relates to the field of photovoltaics, specifically, to a bifacial solar cell and a preparation method thereof.
- the crystalline silicon doped layer in solar cells has a great impact on the efficiency of solar cells. Since the crystalline silicon doped layer contains a certain amount of doped ions such as phosphorus and boron, it can form an electric field inside the battery. , acting on carriers, providing field passivation and interface passivation for the battery, increasing the open circuit voltage of the battery; and the crystalline silicon doped layer can reduce the metal content to a certain extent during the subsequent printing of electrodes and sintering. The risk of silver paste ablation thereby improves the battery’s contact resistance and metal recombination current.
- doped ions such as phosphorus and boron
- the purpose of the embodiments of the present application is to provide a bifacial solar cell and a preparation method thereof, which can at least improve the passivation effect of the cell, enhance the ablation resistance of the cell, and improve the efficiency of the cell.
- Some embodiments of the present application provide a method for preparing the above-mentioned double-sided solar cell, which may include the following steps: taking silicon with a silicon oxide doped layer attached to one side and a first crystalline silicon doped layer attached to the other side. Chip, use silicon source as raw material, deposit intrinsic silicon film on the surface of silicon oxide doped layer; use plasma gas to bombard the intrinsic silicon film, repeat the deposition operation and the operation of bombarding with plasma gas 0 to 50 times to form the intrinsic silicon film.
- silicon layer For the silicon layer, repeat 0 times to perform only one deposition and plasma gas bombardment operation; then use the silicon source and the second doping source as raw materials to deposit a second crystalline silicon doping layer on the surface of the intrinsic silicon layer; silicon wafer It is N type, the second crystalline silicon doping layer is N type, and the first crystalline silicon doping layer is P type; or the silicon wafer is P type, the second crystalline silicon doping layer is P type, and the first crystalline silicon doping layer is N type.
- the layer is N-type.
- the intrinsic silicon film deposited by plasma gas bombardment can change the microstructure of the intrinsic silicon film, reduce the internal pores, and make the structure denser, thus forming an intrinsic silicon layer with higher physical strength. It is not easy to crack in the subsequent high-temperature process, and it is also helpful to enhance the ablation resistance of the solar cell; in addition, the intrinsic silicon layer formed after the bombardment treatment can reduce the parasitic absorption of light on the back of the cell and increase the current; and the intrinsic Much of the -SiH 2 in the silicon film will be converted into -SiH structure during bombardment, but the overall hydrogen content remains unchanged, resulting in fewer carrier recombination defects in the formed intrinsic silicon layer, which is beneficial to improving field passivation. performance.
- the bifacial solar cell produced belongs to N-type TOPCon (Tunnel Oxide Passivated Contact, tunneling Oxide layer passivation contact) solar cell.
- TOPCon solar cells have a very high efficiency limit, which is close to the theoretical limit efficiency of crystalline silicon solar cells.
- the N-type doped layer contains a certain concentration of phosphorus ions, which can form an electric field inside the battery and act on the carriers, providing field passivation and interface passivation for the battery, and increasing the open circuit voltage of the battery. .
- the bifacial solar cell produced is a P-type solar cell. Battery.
- the bombardment time may be 0.1 to 600 s; and/or the plasma gas may be at least one of argon, nitrogen, or hydrogen.
- the bombardment time can be controlled from 0.1s to 600s, which can make the formed intrinsic silicon layer denser.
- an annealing step may also be included.
- the annealing temperature may be 600°C to 1000°C, and the annealing time may be 5 to 35 minutes.
- annealing treatment can further improve the conversion efficiency of solar cells.
- the method for preparing a double-sided solar cell may further include the following steps: silicon nitride may be used as a raw material, and an anti-reflective layer may be deposited on the surface of the second crystalline silicon doped layer.
- the anti-reflection layer deposited on the surface of the second crystalline silicon doped layer can improve the light absorption efficiency of the solar cell, which is beneficial to improving the conversion efficiency of the solar cell.
- the step of preparing the first crystalline silicon doped layer may include: using the first doping source and the silicon source as raw materials, diffusion and bonding on the surface of the silicon wafer to form the first crystalline silicon doped layer.
- the oxidizing agent is one or more of laughing gas, oxygen, and ozone.
- the first doping source can be selected as a boron source, which can ensure that the first crystalline silicon doping layer formed is a P-type doping layer, thereby preparing a TOPCon solar cell.
- the method for preparing a double-sided solar cell may further include the following steps: using silicon nitride as a raw material, depositing an anti-reflective layer on the surface of the first crystalline silicon doped layer.
- the anti-reflection layer that can be deposited on the surface of the first crystalline silicon doped layer can improve the light absorption efficiency of the solar cell, which is beneficial to improving the conversion efficiency of the solar cell.
- grid lines can be screen-printed on the surface of the anti-reflection layer and sintered to form positive and negative electrodes.
- the sintering temperature is 830°C.
- the second doping source may be a phosphorus source.
- the phosphorus source may be at least one of phosphane, phosphorus oxychloride, and phosphorus oxybromide; and/or silicon.
- the source can be silane.
- selecting the second doping source as a phosphorus source can ensure that the first crystalline silicon doped layer formed is an N-type doped layer, thereby preparing a TOPCon solar cell.
- the bifacial solar cell can be produced by the above-mentioned preparation method.
- the bifacial solar cell can include a first crystalline silicon doped layer, a silicon wafer, and a first crystalline silicon doped layer, which are stacked in sequence. Silicon oxide doped layer, intrinsic silicon layer and second crystalline silicon doped layer.
- the above technical solution using the above method to lay another intrinsic silicon layer between the silicon oxide doped layer and the second crystalline silicon doped layer can enhance the ablation resistance performance of the battery and reduce metal recombination loss and filling factor. .
- the intrinsic silicon layer has a higher number of -SiH connected to single hydrogen atoms and a lower number of -SiH 2 connected to double hydrogen atoms.
- the carrier recombination in the intrinsic silicon layer Fewer defects help improve field passivation performance.
- the thickness of the intrinsic silicon layer may be no greater than 200 nm.
- ensuring that the thickness of the intrinsic silicon layer is no more than 200nm can not only enhance the ablation resistance of the battery, reduce the metal composite loss and filling coefficient, but also limit the parasitic absorption loss of light on the back of the battery, and will not Affect the conversion efficiency of the battery.
- the surface of the second crystalline silicon doped layer facing away from the intrinsic silicon layer can also be superimposed with an anti-reflection layer, and the surface of the first crystalline silicon doped layer facing away from the silicon wafer can also be arranged from near to far.
- a passivation layer and an anti-reflection layer are stacked in sequence.
- the passivation layer can reduce the surface carrier recombination speed of double-sided solar cells, and the anti-reflection layer can improve the light absorption efficiency of double-sided solar cells.
- the two work together to improve the conversion efficiency of double-sided solar cells.
- Figure 1 is a process flow chart for the preparation of N-type TOPCon solar cells in the embodiment of the present application.
- Figure 1 shows the process flow chart for preparing N-type TOPCon bifacial solar cells in the embodiment of the present application.
- the preparation method is as follows;
- the crystalline silicon doped layer and silicon wafer are formed by crystalline silicon doped with elements such as phosphorus or boron. The difference is that the thickness of the silicon wafer is much greater than the thickness of the crystalline silicon doped layer; when the silicon wafer is doped with phosphorus, , the silicon wafer or crystalline silicon doped layer is N-type. When the silicon wafer is doped with boron element, the silicon wafer or crystalline silicon doped layer is P-type. Since this application takes the preparation of N-type TOPCon bifacial solar cells as an example, the silicon wafer is an N-type silicon wafer with a thickness of 160 to 170um. In some other embodiments, if you want to prepare a P-type bifacial solar cell, you need to replace the N-type silicon wafer with a P-type silicon wafer.
- the alkali solution in this step can use 1% KOH, and the cleaning solution is one or both of hydrogen peroxide or alkali solution.
- the first crystalline silicon doping layer is formed by diffusion and bonding on one surface of the N-type silicon wafer.
- the thickness of the first crystalline silicon doped layer is generally 0.8 to 1.2um, and it will form a p-n junction with the N-type silicon wafer.
- the doping element in the first crystalline silicon doping layer is boron, and a P-type doping layer is formed.
- the first doping source is The boron source, specifically, the boron source can be borane, boron trichloride or boron tribromide, and the diffusion inference temperature is 900 to 1100°C.
- the silicon source in the embodiments of the present application is generally silane, and the silicon source in subsequent steps is also silane.
- the first doping source is BCl 3 and the diffusion junction temperature is 1000°C.
- the first crystalline silicon doped layer is formed, it is generally etched and alkali polished. Specifically: a chain hydrofluoric acid etching machine is used to remove the borosilicate glass (BSG) on the back and sides, and then the borosilicate glass (BSG) on the back and side is removed by a robot. Transfer to the trough-type alkali polishing machine to remove the p-n junctions on the back and edge, and prepare the alkali polishing morphology.
- BSG borosilicate glass
- BSG borosilicate glass
- Forming a silicon oxide doping layer using silicon source and oxidant as raw materials, deposit and form a silicon oxide doping layer on the other surface of the N-type silicon wafer.
- This step is generally prepared using the PECVD (Plasma Enhanced Chemical Vapor Deposition) method, which can accurately control the thickness of the silicon oxide doped layer in the range of 0.1 to 2nm.
- the oxidant can be laughing gas, oxygen, One or more of ozone.
- laughing gas is selected as the oxidant in the embodiments of this application.
- Form the intrinsic silicon layer use the silicon source as the raw material, deposit the intrinsic silicon film on the surface of the silicon oxide doped layer, then use plasma gas to bombard the intrinsic silicon film, repeat the deposition operation and the operation of bombarding with plasma gas0 To 50 times, the intrinsic silicon layer is formed.
- plasma gas bombardment treatment can change the microstructure of the intrinsic silicon film, making the formed intrinsic silicon layer have fewer holes, a denser structure, and higher physical strength. This is true when the thickness of the intrinsic silicon layer is less than This is especially obvious at 20nm. This ensures that even the thinner intrinsic silicon layer has sufficient strength and is not prone to cracking in the subsequent high-temperature process. Similarly, in the subsequent sintering process, the intrinsic silicon layer with high physical strength will The silicon layer can also more effectively enhance the battery's ablation resistance and reduce metal composite loss and filling factor loss; in addition, the denser intrinsic silicon layer can also reduce the parasitic absorption of light on the back of the battery and reduce the short-circuit current of the battery. improve.
- the plasma gas in this step can be one or more of argon, nitrogen, and hydrogen, and the bombardment time is 0.1 to 600s.
- it can be 0.1s, 1s, 10s, 12s, 20s, 40s, 80s, 150s. , 400s, 500s, 580s or 600s.
- argon gas is used as the plasma gas, and the bombardment time is 12 seconds.
- -SiH 2 After plasma gas bombards the intrinsic silicon film to form an intrinsic silicon layer, -SiH 2 will be converted into a -SiH structure during the bombardment, resulting in a higher number of -SiH connected to single hydrogen atoms in the intrinsic silicon layer, and a higher number of -SiH connected to double hydrogen atoms.
- the amount of SiH 2 is lower, and the overall hydrogen content remains unchanged, which can make fewer defects in the intrinsic silicon layer, less likely to cause carrier recombination, and help improve field passivation performance.
- the thickness of the intrinsic silicon film formed may be the same or different.
- the bombardment time may be the same or different.
- the thickness of the obtained intrinsic silicon films is the same, and the bombardment time during multiple bombardments is also the same, which is 12 seconds.
- this step generally uses the PECVD method to prepare the intrinsic silicon layer, and the preparation is performed in an inert gas atmosphere to protect the intrinsic silicon layer.
- Forming a second crystalline silicon doped layer using the second doping source and the silicon source as raw materials, form a second crystalline silicon doped layer on the surface of the intrinsic silicon layer.
- the formed second crystalline silicon doped layer can provide field passivation and interface passivation for the battery, and can also be used in conjunction with the intrinsic silicon layer to enhance the battery's ablation resistance. Its thickness is generally 80 to 120nm.
- the doping element in the second crystalline silicon doping layer is phosphorus, and an N-type doping layer is formed.
- the second doping source is Phosphorus source
- the phosphorus source can be one or more of phosphane, phosphorus oxychloride, phosphorus oxybromide, etc.
- the phosphorus source in the embodiment of the present application is phosphane.
- the second doping source needs to be a boron source, which will not be described again here.
- this step generally uses the PECVD method to prepare the second crystalline silicon doped layer, and in order to protect the second crystalline silicon layer, it is also performed in an inert gas atmosphere.
- annealing treatment Use a tubular annealing furnace to anneal the battery, the annealing temperature is 600 to 1000°C, and the annealing time is 5 to 35 minutes. As an example, in this embodiment, the annealing temperature is 900°C, the annealing time is 20 minutes, and the gas atmosphere during annealing is nitrogen N 2 .
- the solar cell structure is also subjected to RCA cleaning. Specifically, it is first passed through a chain hydrofluoric acid etching machine to remove the excess oxide layer in the cell structure, and then transferred to an alkali bath to remove the crystalline silicon on the front. Around the plating.
- Form a passivation layer Use an ALD (Atomic Layer Deposition) water process to deposit aluminum oxide (AlO x ) with a thickness of 4 to 6 nm as a passivation layer on the surface of the first crystalline silicon doped layer.
- ALD Atomic Layer Deposition
- the passivation layer can reduce the surface carrier recombination speed of the double-sided solar cell and improve the energy conversion efficiency of the solar cell. Its thickness is generally within 4 to 6 nm, for example, it can be 4 nm, 5 nm or 6 nm. In other embodiments, the passivation layer can also be omitted.
- Form an anti-reflection layer Use the PECVD method to deposit 70 to 90 nm silicon nitride on the surfaces of the passivation layer and the second crystalline silicon doped layer as an anti-reflection layer.
- the anti-reflection layer can reduce the light reflectivity of solar cells, increase the light absorption efficiency of solar cells, and improve the energy conversion efficiency of solar cells.
- the thickness of the two anti-reflection layers in the embodiment of the present application is the same, both in the range of 70 to 90nm, for example, it can be 70nm, 75nm, 80m, 85nm or 90nm.
- the passivation layer can also be omitted.
- grid lines are screen-printed on the surface of the anti-reflection layer and sintered to form positive and negative electrodes.
- the sintering temperature is generally 830°C.
- the structure of the N-type TOPCon bifacial solar cell produced using the above preparation method includes an anti-reflection layer, a second crystalline silicon doped layer (N-type), an intrinsic silicon layer, a silicon oxide doped layer, and a silicon doped layer that are stacked in sequence. chip (N-type), first crystalline silicon doped layer (P-type), passivation layer, and anti-reflection layer.
- the N-type TOPCon solar cell when the solar cell is operating, carriers will be generated from the contact surface between the P-type first crystalline silicon doped layer and the N-type silicon wafer, and then flow to the upper and lower surfaces of the N-type TOPCon solar cell respectively, generating Voltage, if wires are set outside the N-type TOPCon solar cell at this time, the N-type TOPCon solar cell can output current to the outside.
- the intrinsic silicon layer can work with the N-type second crystalline silicon doped layer to enhance the battery's ablation resistance, reduce metal recombination loss and filling factor, and because the intrinsic silicon layer is better than the second crystalline silicon doped layer layer, the number of -SiH connected by single hydrogen atoms is higher, the number of -SiH connected by double hydrogen atoms is lower, and there are fewer defects of carrier recombination in the intrinsic silicon layer, which is beneficial to improving the field passivation performance.
- the thickness of the intrinsic silicon layer in the battery is generally not greater than 200 nm, which can also limit the parasitic absorption loss of light on the back of the battery and will not cause obvious obstacles to the transmission of carriers.
- the types of silicon wafers and crystalline silicon doped layers in the double-sided solar cell can also be adjusted to: P-type silicon wafer, N-type first crystalline silicon doped layer, and P-type second crystalline silicon doped layer.
- the solar cell at this time is no longer an N-type TOPCon solar cell, and this article will not go into details here.
- the embodiment of the present application provides an N-type TOPCon solar cell, and its preparation method is as follows:
- step S300 Forming a silicon oxide doped layer: Put the silicon wafer processed in step S200 into a tubular PECVD equipment, pass silane and laughing gas into the equipment, and pulse discharge to prepare a 1 nm thick silicon oxide doped layer.
- Form the intrinsic silicon layer pass silane and inert gas into the tubular PECVD equipment, deposit an intrinsic silicon film with a thickness of 5nm on the surface of the silicon oxide doped layer, and then use argon plasma gas to bombard the intrinsic silicon film.
- the bombardment time is 12s, and a 5nm thick intrinsic silicon layer is produced.
- N-type doped layer Pass phosphane, silane and inert gas into the tubular PECVD equipment, and deposit a 60nm-thick second crystalline silicon doped layer on the surface of the intrinsic silicon layer.
- annealing treatment Use a tubular annealing furnace for annealing treatment.
- the annealing gas atmosphere is nitrogen
- the annealing temperature is 900°C
- the annealing time is 20 minutes.
- the silicon wafer is cleaned by RCA.
- Form a passivation layer Use the ALD water process to deposit aluminum oxide with a thickness of 5 nm on the surface of the N-type doped layer as a passivation layer.
- Form an anti-reflection layer Use the PECVD method to deposit silicon nitride with a thickness of 85nm on the surface of the passivation layer as an anti-reflection layer, and then deposit silicon nitride with a thickness of 70nm on the surface of the N-type doped layer as an anti-reflection layer. layer.
- the N-type TOPCon solar cell provided in the embodiment of the present application has an intrinsic silicon layer with a thickness of 5 nm and is formed by one-time deposition and plasma bombardment.
- the embodiment of the present application provides an N-type TOPCon solar cell. Compared with the preparation of Embodiment 1, the main differences are as follows:
- Form the intrinsic silicon layer pass silane and inert gas into the tubular PECVD equipment, deposit an intrinsic silicon film with a thickness of 5nm on the surface of the silicon oxide doped layer, and then use argon plasma gas to bombard the intrinsic silicon film.
- the bombardment time is 12s, and then the operations of depositing the intrinsic silicon film and bombarding the intrinsic silicon film with argon gas are repeated three times.
- the thickness of each deposition is 5nm, and the bombardment time of each time is 12s to make a 20nm thick film. intrinsic silicon layer.
- the N-type TOPCon solar cell provided in the embodiment of the present application has an intrinsic silicon layer with a thickness of 20 nm and is formed by multiple depositions and plasma bombardment.
- the embodiment of the present application provides an N-type TOPCon solar cell. Compared with the preparation of Embodiment 1, the main differences are as follows:
- Form the intrinsic silicon layer pass silane and inert gas into the tubular PECVD equipment, deposit an intrinsic silicon film with a thickness of 20nm on the surface of the silicon oxide doped layer, and then use argon plasma gas to bombard the intrinsic silicon film.
- the bombardment time is 12s.
- the N-type TOPCon solar cell provided in the embodiment of the present application has an intrinsic silicon layer with a thickness of 20 nm and is formed by one-time deposition by PECVD method and plasma bombardment.
- This comparative example provides an N-type TOPCon solar cell. Compared with Example 1, its preparation method does not include the S400 step.
- the N-type TOPCon solar cell in this comparative example does not contain an intrinsic silicon layer.
- This comparative example provides an N-type TOPCon solar cell. Compared with Example 1, its preparation method has the following main differences:
- Form the intrinsic silicon layer pass silane and inert gas into the tubular PECVD equipment, deposit a 5 nm intrinsic silicon film on the surface of the silicon oxide doped layer, and use the intrinsic silicon film as the intrinsic silicon layer.
- the thickness of the intrinsic silicon layer of the N-type TOPCon solar cell in this comparative example is 5 nm, which is deposited by the PECVD method without using argon plasma gas bombardment.
- This comparative example provides an N-type TOPCon solar cell. Compared with Example 1, its preparation method has the following main differences:
- Form the intrinsic silicon layer pass silane and inert gas into the tubular PECVD equipment, deposit a 20nm intrinsic silicon film on the surface of the silicon oxide doped layer, and use the intrinsic silicon film as the intrinsic silicon layer.
- the thickness of the intrinsic silicon layer of the N-type TOPCon solar cell in this comparative example is 20 nm, which is deposited by the PECVD method without using argon plasma gas bombardment.
- Example 1 From the data results of Example 1 and Comparative Example 1 in Table 1, it can be seen that the solar cell with the intrinsic silicon layer has higher efficiency; and the number of film explosion points is also smaller, which shows that the physical strength of the cell is higher. , it is less likely to be damaged, especially during high-temperature processes, the battery cells are less likely to rupture.
- the number of membrane bursting points increases the physical strength of the battery and can also improve the efficiency of the battery to a certain extent.
- Embodiments of the present application provide a bifacial solar cell and a preparation method thereof.
- the intrinsic silicon layer formed by first depositing and then bombarding can enhance the ablation resistance of the battery, reduce metal composite loss and filling coefficient, and the efficiency of the manufactured solar cell can be significantly improved.
- the intrinsic silicon layer compared with the second crystalline silicon doped layer, has a higher number of -SiH2 connected with single hydrogen atoms and a lower number of -SiH2 connected with double hydrogen atoms. There are fewer carrier recombination defects in the silicon layer, which is beneficial to improving field passivation performance.
- the bifacial solar cell and its preparation method of the present application are reproducible and can be used in a variety of industrial applications.
- the bifacial solar cell and its preparation method of the present application can be used in the field of photovoltaic technology.
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Abstract
Description
Claims (11)
- 一种双面太阳能电池的制备方法,其特征在于,其包括以下步骤:取其中一面附着有氧化硅掺杂层,另一面附着有第一晶硅掺杂层的硅片,以硅源为原料,在所述氧化硅掺杂层的表面沉积本征硅膜;使用等离子气体轰击所述本征硅膜,重复沉积的操作和用等离子气体轰击的操作0-50次,形成本征硅层,重复0次是只进行一次沉积和用等离子气体轰击的操作;再以硅源和第二掺杂源为原料,在所述本征硅层的表面沉积第二晶硅掺杂层;所述硅片为N型,所述第二晶硅掺杂层为N型,所述第一晶硅掺杂层为P型;或所述硅片为P型,所述第二晶硅掺杂层为P型,所述第一晶硅掺杂层为N型。
- 根据权利要求1所述的双面太阳能电池的制备方法,其特征在于,所述使用等离子气体轰击所述本征硅时,轰击时间为0.1s至600s;和/或,所述等离子气体为氩气、氮气或氢气中的至少一种。
- 根据权利要求1或2所述的双面太阳能电池的制备方法,其特征在于,在形成所述第二晶硅掺杂层后,还包括退火处理的步骤,退火温度为600℃至1000℃,退火时间为5min至35min。
- 根据权利要求1至3中的任一项所述的双面太阳能电池的制备方法,其特征在于,其还包括以下步骤:以氮化硅为原料,在所述第二晶硅掺杂层的表面沉积减反射层。
- 根据权利要求1至3中的任一项所述的双面太阳能电池的制备方法,其特征在于,所述第一晶硅掺杂层的制备步骤包括:以第一掺杂源和所述硅源为原料,在所述硅片的表面扩散推结形成第一晶硅掺杂层,可选地,所述第一掺杂源为硼源;和/或,所述氧化硅掺杂层的制备步骤包括:以氧化剂和所述硅源为原料,在所述硅片的其中一面沉积所述氧化硅掺杂层,可选地,所述氧化剂为笑气、氧气、臭氧中的一种或多种。
- 根据权利要求5所述的双面太阳能电池的制备方法,其特征在于,其还包括以下步骤:以氮化硅为原料,在所述第一晶硅掺杂层的表面沉积减反射层。
- 根据权利要求6所述的双面太阳能电池的制备方法,其特征在于,在形成所述减反射层之后,还分别在所述减反射层的表面丝网印刷栅线并烧结制成正负电极,烧结的温度为830℃。
- 根据权利要求1至7中的任一项所述的双面太阳能电池的制备方法,其特征在于,所述第二掺杂源为磷源,可选地,所述磷源为磷烷、三氯氧磷、三溴氧磷中的至少一种;和/或,所述硅源为硅烷。
- 一种双面太阳能电池,其特征在于,其由根据权利要求1至8中的任一项所述的双 面太阳能的制备方法制得,所述双面太阳能电池包括依次叠加设置的第一晶硅掺杂层、硅片、氧化硅掺杂层、本征硅层和第二晶硅掺杂层。
- 根据权利要求9所述的双面太阳能电池,其特征在于,所述本征硅层的厚度不大于200nm。
- 根据权利要求9或10所述的双面太阳能电池,其特征在于,所述第二晶硅掺杂层背离所述本征硅层的表面还叠加设置有减反射层,所述第一晶硅掺杂层背离所述硅片的表面还由近至远依次叠加设置有钝化层、减反射层。
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