WO2023207438A1 - 显示器件及其制备方法 - Google Patents

显示器件及其制备方法 Download PDF

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Publication number
WO2023207438A1
WO2023207438A1 PCT/CN2023/082947 CN2023082947W WO2023207438A1 WO 2023207438 A1 WO2023207438 A1 WO 2023207438A1 CN 2023082947 W CN2023082947 W CN 2023082947W WO 2023207438 A1 WO2023207438 A1 WO 2023207438A1
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Prior art keywords
layer
wavelength conversion
grid
display device
conversion unit
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PCT/CN2023/082947
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English (en)
French (fr)
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仉旭
庄永漳
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镭昱光电科技(苏州)有限公司
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Publication of WO2023207438A1 publication Critical patent/WO2023207438A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements

Definitions

  • This application belongs to the technical field of semiconductor devices, and specifically relates to display devices and preparation methods thereof.
  • Micro-LED also known as micro light-emitting diode, refers to a high-density integrated LED array.
  • the distance between LED pixels in the array is on the order of 0.1-100 microns, and each LED pixel can emit light by itself. Since a higher number of integrations can be achieved on a chip of the same area, the integration density of Micro-LED microdisplays is greatly increased, thereby improving the display resolution while ensuring high brightness, enabling low energy consumption, high brightness, and high resolution. Microdisplay design.
  • the wavelength conversion layer is formed on the LED pixels to change the luminous color of the LED pixels.
  • a wavelength conversion layer is formed on the LED array by dispersing photoluminescent materials in photoresist and patterning them by photolithography.
  • the light conversion efficiency of the wavelength conversion layer is also improved due to the increase in the thickness of the wavelength conversion layer.
  • this colorization solution has simple process and high production efficiency.
  • the resolution of the wavelength conversion layer is limited due to the severe scattering phenomenon of the wavelength conversion layer.
  • the concentration of photoluminescent materials must be controlled at a lower level, but the corresponding absorption and conversion characteristics will be degraded. Therefore, it is very challenging to balance resolution and conversion efficiency directly through photoresist.
  • the present application provides a preparation method for a display device, with the purpose of overcoming the defect that the method of forming a wavelength conversion layer in the prior art cannot take both resolution and conversion efficiency into consideration; another purpose of the present application is to provide a display device.
  • the preparation method of the display device described in this application includes:
  • a display device including a plurality of pixels arranged in an array, the pixels emitting light of a first color
  • a grid layer is formed above the pixel points.
  • the grid layer includes a plurality of grid holes arranged in an array. The grid holes are arranged relative to the pixel points. The first color light passes through the grid. grid hole;
  • a wavelength conversion layer is formed above the grid layer.
  • the wavelength conversion layer includes a plurality of first wavelength conversion units.
  • the first wavelength conversion units fill at least part of the grid holes.
  • the first wavelength conversion units convert The first color light is converted into second color light.
  • the pixel array is arranged to form a pixel array; the pixels are selected from organic light-emitting diodes (OLED, Organic Light-Emitting Diode), liquid crystal displays (LCD, Liquid Crystal Display) and micro-light-emitting diodes. any of them.
  • OLED Organic Light-Emitting Diode
  • LCD liquid crystal display
  • micro-light-emitting diodes any of them.
  • the light emitted by the pixel points is any one of red light, green light, blue light, yellow light or ultraviolet light.
  • the wavelength of the first wavelength conversion unit is longer than the wavelength of the pixel.
  • forming the grid layer includes:
  • a grid layer coating is formed above the pixel points, and the grid layer coating is etched to form the grid holes.
  • a dry etching process is used to form the grid holes in the grid layer coating.
  • a photolithography process is used to form the grid holes in the grid layer coating.
  • the method includes:
  • a reflective layer is formed on the grid layer, and the reflective layer at least covers the sidewalls of the grid holes and exposes the pixel points.
  • the cross-sectional size of the grid holes gradually becomes larger in a direction away from the pixel points.
  • the cross-section is a cross-section parallel to the light-emitting surface of the pixel point.
  • the method includes: covering the pixel points with a barrier layer, and the grid layer is located above the barrier layer; wherein the grid hole is formed by etching so that the bottom of the grid hole The blocking layer is exposed, and the first color light passes through the blocking layer.
  • the height of the first wavelength conversion unit is greater than the depth of the grid hole and the first wavelength conversion unit completely covers the corresponding grid hole, where the first wavelength conversion unit is The projection on the grid layer is larger than the projection of the grid holes on the grid layer.
  • a light blocking layer is formed above the grid layer, and the light blocking layer fills the gaps of the wavelength conversion layer.
  • the wavelength conversion layer is made of photoresist containing a wavelength conversion substance, and the wavelength conversion layer is formed by exposure and development.
  • a filter layer is covered on the wavelength conversion layer.
  • the filter layer at least includes a plurality of first filter units, and one first filter unit corresponds to One of the first wavelength conversion units is provided, and the first filter unit only allows the second color light to pass through.
  • providing a display device includes:
  • a driving panel is provided, and an LED epitaxial layer is formed on the driving panel, and the LED epitaxial layer includes a first doped semiconductor layer, a second doped semiconductor layer, and an active layer located between the two;
  • the pixel points are formed on the LED epitaxial layer, and the pixel points are micro light-emitting diodes.
  • the step of forming the micro light-emitting diodes includes:
  • the second doped semiconductor layer is etched to form a mesa structure, or the second doped semiconductor layer is ion implanted to form an array of micro light-emitting diodes.
  • the second doped semiconductor layer includes a continuous functional layer structure: the first doped semiconductor layer is etched to form a mesa structure, or the first doped semiconductor layer is ion implanted to form an array of micro-structures. led;
  • the first doped semiconductor layer, the second doped semiconductor layer and the active layer are isolated from each other.
  • forming the wavelength conversion layer further includes forming a second wavelength conversion unit that converts the first color light into a third color light, the first wavelength conversion unit and The second wavelength conversion units are filled in different grid holes.
  • the filter layer further includes a plurality of second filter units, one second filter unit is provided corresponding to one second wavelength conversion unit, and the second filter unit only allows The third color light passes through.
  • forming the wavelength conversion layer further includes forming a third wavelength conversion unit, the third wavelength conversion unit converts the first color light into a fourth color light, the first wavelength conversion unit, The second wavelength conversion unit and the third wavelength conversion unit are filled in different grid holes.
  • the wavelength of the third wavelength conversion unit only needs to be longer than the wavelength of the pixel.
  • the filter layer further includes a plurality of third filter units, one of the third filter units is provided corresponding to one of the third wavelength conversion units, and the third filter unit only allows The fourth color light passes through.
  • the method includes forming a transparent unit that transmits the first color light, and the first wavelength conversion unit, the second wavelength conversion unit and the transparent unit are filled with different Grid holes.
  • the display device is flattened, and the flattening method includes:
  • a flat layer is formed between the pixel points, the flat layer is made of photoresist, and the flat layer is exposed to the light-emitting surface of the pixel point through a photolithography process;
  • a patterned mask is formed on the flat layer, and then the flat layer is etched to expose the light-emitting surface of the pixel and the mask is removed;
  • the flat layer is etched to expose the light-emitting surface of the pixel point.
  • the material of the flat layer includes inorganic materials or organic materials.
  • the inorganic materials include Al, Ag, SiO 2 , Al 2 O 3 , ZrO 2 , TiO 2 , Si 3 N 4 , and HfO 2 Any one or a combination of several;
  • the organic materials include black matrix photoresist, color filter photoresist, polyimide, wall glue (BANK), Overcoat glue, near-ultraviolet negative photoresist, Any one or a combination of phenylpropylcyclobutenes.
  • the display device described in this application includes:
  • a display device the display device includes a plurality of pixels arranged in an array, and the pixels emit light of a first color;
  • a grid layer the grid layer includes a plurality of grid holes arranged in an array, the grid holes are arranged relative to the pixel points, and the first color light passes through the grid holes;
  • the wavelength conversion layer comprising a plurality of first wavelength conversion units, the first wavelength conversion units filling at least part of the grid holes, the first wavelength conversion units converting the first color light into Second color light.
  • it also includes:
  • a reflective layer which covers at least the sidewalls of the grid holes and exposes the pixels.
  • the cross-sectional size of the grid holes gradually becomes larger in a direction away from the pixel points.
  • the cross-section is a cross-section parallel to the light-emitting surface of the pixel point.
  • it includes: a blocking layer covering the pixel points, and the first color light passes through the blocking layer; the grid layer is located above the blocking layer, and the The bottom of the grid holes exposes the barrier layer.
  • the height of the first wavelength conversion unit is greater than the depth of the grid hole and the first wavelength conversion unit completely covers the corresponding grid hole, where the first wavelength conversion unit is The projection on the grid layer is larger than the projection of the grid holes on the grid layer.
  • this includes:
  • a light-blocking layer fills the gap of the wavelength conversion layer.
  • this includes:
  • a filter layer at least includes a plurality of first filter units, one of the first filter units is provided corresponding to one of the first wavelength conversion units, and the first filter unit only allows the first wavelength conversion unit to Two colors of light pass through.
  • the wavelength conversion layer further includes a second wavelength conversion unit that converts the first color light into a third color light, and the first wavelength conversion unit and the The second wavelength conversion units are filled in different grid holes.
  • the filter layer further includes a plurality of second filter units, one second filter unit is provided corresponding to one second wavelength conversion unit, and the second filter unit only allows The third color light passes through.
  • the wavelength conversion layer further includes a third wavelength conversion unit; the third wavelength conversion unit converts the first color light into a fourth color light, the first wavelength conversion unit, the The second wavelength conversion unit and the third wavelength conversion unit are filled in different grid holes.
  • the filter layer further includes a plurality of third filter units, one of the third filter units is provided corresponding to one of the third wavelength conversion units, and the third filter unit only allows The fourth color light passes through.
  • a transparent unit is included, the transparent unit transmits the first color light, the first wavelength conversion unit, the second wavelength conversion unit and the transparent unit are filled in different gates. Ge Kong.
  • this includes:
  • a driving panel the driving panel is used to drive the pixels arranged above the driving panel.
  • the pixels are located above the same driving panel.
  • the driving panel is a silicon-based CMOS or thin film field effect transistor.
  • the pixel points are selected from any one of organic light-emitting diodes, LCDs, and micro-light-emitting diodes.
  • this includes:
  • the flat layer covers between the pixels;
  • the material of the flat layer includes inorganic materials or organic materials, and the inorganic materials include Al, Ag, SiO 2 , Al 2 O 3 , ZrO 2 , TiO 2. Any one or a combination of Si 3 N 4 and HfO 2 ;
  • the organic materials include black matrix photoresist, color filter photoresist, polyimide, wall glue (BANK), Overcoat Any one or a combination of glue, near-ultraviolet negative photoresist, and phenylpropylcyclobutene.
  • the pixels are micro light-emitting diodes, and the width of the micro light-emitting diodes is 100 nanometers to 100 microns; the pixel array is arranged to form a pixel array, and the spacing between adjacent pixels is 1-10 microns.
  • the distance between adjacent pixels is the distance between the center points of two adjacent pixels.
  • the method for preparing a display device of the present application includes providing a display device.
  • the display device includes a plurality of pixel points arranged in an array, and the pixel points emit light of a first color; forming a grid layer above the pixel points,
  • the grid layer includes a plurality of grid holes arranged in an array, the grid holes are arranged relative to the pixel points, and the first color light passes through the grid holes;
  • a wavelength conversion layer is formed above the grid layer, and the wavelength conversion layer includes a plurality of first A wavelength conversion unit, the first wavelength conversion unit fills at least part of the grid holes, and the first wavelength conversion unit converts the first color light into the second color light.
  • This preparation method sets a grid layer on the pixel points.
  • the grid-like structure of the grid layer can provide support for the formed wavelength conversion layer (such as quantum dot photoresist, QDPR for short), which is beneficial to wavelength conversion.
  • the thickness of the wavelength conversion layer accumulates, thereby making the thickness of the wavelength conversion layer thicker and more controllable, and the light conversion efficiency also increases as the thickness of the wavelength conversion layer increases; filling the grid holes with the wavelength conversion layer makes the wavelength conversion layer and the grid
  • the contact area of the layer is increased, which improves the adhesion of the wavelength conversion layer, improves the photolithography yield, and widens the process window; at the same time, because the wavelength conversion layer is filled in the grid holes, the wavelength conversion layer can be covered by the grid layer during the photolithography process. Very good protection.
  • the exposure time can be reduced without causing overexposure.
  • the effect of undercut (drilling) caused by photolithography development can be eliminated.
  • the pattern of the wavelength conversion layer can be smaller, and the process window can be enlarged, which is good.
  • the efficiency is higher and can be applied to products with high resolution and high pixel density.
  • the display device of the present application includes a display device, which includes a plurality of pixels arranged in an array, and the pixels emit light of the first color; a grid layer, which includes a plurality of pixels arranged in an array.
  • the grid hole is arranged relative to the pixel point and allows the pixel point to emit the first color light to pass through; the wavelength conversion layer, the wavelength conversion layer at least includes a plurality of first wavelength conversion units, and the first wavelength conversion unit fills at least part of the grid
  • the first wavelength conversion unit can convert the first color light into the second color light.
  • the wavelength conversion layer is obtained through an exposure and development process, which is simpler.
  • a reflective layer is formed on the grid layer, which can improve the light effect; further, in some embodiments of the present application, along the direction away from the pixel points, the cross-section of the grid holes
  • the size gradually increases, so that the reflective layer assumes a gradually expanding configuration of small at the bottom and large at the top.
  • the reflective layer forms a slope to improve the reflection efficiency.
  • the emitted light of the pixel points further increases the light conversion efficiency of the wavelength conversion layer due to the reflection of the reflective layer.
  • the pixel points are selected from any one of organic light-emitting diodes (OLED, Organic Light-Emitting Diode), liquid crystal displays (LCD, Liquid Crystal Display) and micro-light-emitting diodes to realize micro-display devices
  • OLED Organic Light-Emitting Diode
  • LCD liquid crystal display
  • micro-light-emitting diodes to realize micro-display devices
  • Figure 1 is a schematic cross-sectional structural diagram of a display device provided by an embodiment of the present application.
  • Figure 2 is a schematic cross-sectional structural diagram of the provided display device
  • Figure 3 is a schematic cross-sectional structural view of the display device after a barrier layer is formed above the display device during the preparation process;
  • Figure 4 is a schematic cross-sectional structural view of the display device after the grid layer coating is formed during the preparation process
  • Figure 5 is a schematic cross-sectional structural view of the display device after the grid layer is formed during the preparation process
  • Figure 6 is a schematic cross-sectional structural diagram of a reflective material layer formed during the preparation process of the display device
  • Figure 7 is a schematic cross-sectional structural diagram of a display device after a reflective layer is formed during the preparation process
  • Figure 8 is another schematic cross-sectional structural diagram of the display device after the reflective layer is formed during the preparation process
  • Figure 9 is a schematic cross-sectional structural diagram of the first wavelength conversion material layer formed during the preparation process of the display device.
  • Figure 10 is a schematic cross-sectional structural view of the display device after forming the first wavelength conversion unit during the preparation process
  • Figure 11 is an enlarged schematic diagram of the partial structure of Figure 10;
  • Figure 12 is a schematic cross-sectional structural diagram of the second wavelength conversion material layer formed during the preparation process of the display device
  • Figure 13 is a schematic cross-sectional structural view of the display device after the second wavelength conversion unit is formed during the preparation process
  • Figure 14 is a schematic cross-sectional structural diagram of the third wavelength conversion material layer formed during the preparation process of the display device
  • Figure 15 is a schematic cross-sectional structural view of the display device after the third wavelength conversion unit is formed during the preparation process
  • Figure 16 is a schematic cross-sectional structural view of the wavelength conversion layer formed during the preparation process of the display device, which only has a first wavelength conversion unit and a second wavelength conversion unit;
  • Figure 17 is a schematic cross-sectional structural view of the display device after the light blocking layer is formed during the preparation process
  • Figure 18 is a schematic cross-sectional structural view of the display device after the filter layer is formed during the preparation process
  • Figure 19 is a schematic top view of a structure of a display device provided in an embodiment of the present application.
  • Figure 20 is a schematic top view of another structure of a display device provided in an embodiment of the present application.
  • Figure 21 is a schematic structural diagram of pixels arranged according to a Bayer array
  • Figure 22 is a schematic structural diagram of pixels arranged in a strip array
  • a layer refers to a portion of material that includes a region of thickness.
  • a layer may extend over the entire underlying or superstructure, or may extend over a localized extent of the underlying or superstructure.
  • a layer may be a region of a homogeneous or inhomogeneous continuous structure, the thickness of which is less than the thickness of the continuous structure.
  • a layer may be located between the top and bottom surfaces of a continuous structure or between any pair of horizontal planes therebetween.
  • the layers may extend horizontally, vertically and/or along tapered surfaces.
  • a layer can include multiple layers.
  • the semiconductor layers may include one or more doped or undoped semiconductor layers and may be of the same or different materials.
  • the embodiment of the present application describes a display device and a manufacturing method thereof.
  • the display device includes a display device with pixel points 101 , a grid layer 111 and a wavelength conversion layer 113 .
  • the display device is a carrier of pixel points 101.
  • the pixel points 101 are arranged in an array in the display device to form a pixel point array 100. It can be understood that the pixel point array 100 may include multiple pixel points. 101. Each pixel point 101 presents a regular or irregular array arrangement.
  • the pixels 101 of the display device are selected from any one of organic light-emitting diodes, LCDs, and micro-light-emitting diodes.
  • the pixel 101 uses a micro light-emitting diode (Micro-LED) structure, and the size of the Micro-LED is reduced to 100 nanometers - 100 microns.
  • the pixel array 100 is a Micro-LED array.
  • the Micro-LED array is highly integrated, and the distance between the Micro-LED pixels 101 in the array is reduced to the order of 10 microns.
  • the Micro-LED display device connects Micro-LED pixels 101 with a size of 10 microns or even smaller to the driving panel 102 to achieve precise control of the brightness and duration of the light emission of each Micro-LED pixel 101.
  • the distance between the pixels 101 of the Micro-LEDs in the array is less than 5 microns.
  • the display device includes a driving panel 102, and the driving panel 102 is a silicon-based CMOS (Complementary Metal Oxide Semiconductor, complementary metal oxide semiconductor) or a thin film field effect transistor.
  • Silicon-based CMOS is a chip based on silicon.
  • the epitaxial layer is bonded to the driver panel 102 .
  • the driving panel 102 includes a CMOS backplane or a display substrate of a TFT glass substrate. Then, a Micro-LED pixel array 100 is formed on the epitaxial layer.
  • an LED epitaxial layer is formed on the driving panel 102, and micro light-emitting diodes arranged in an array are formed on the LED epitaxial layer.
  • Each pixel point 101 is a micro light-emitting diode.
  • connection structure of the Micro-LED can be common cathode or common anode or independent.
  • a common cathode structure may be achieved through the connection of consecutive cathode semiconductor layers.
  • a common anode structure or an independent structure can also be used, as long as the pixel point 101 can be illuminated and emit light.
  • the LED epitaxial layer includes a first doped semiconductor layer, a second doped semiconductor layer, and an active layer between the two; specifically, it includes:
  • the second doped semiconductor layer is etched to form a mesa structure, or the second doped semiconductor layer is ion implanted to form an array of micro light-emitting diodes.
  • the second doped semiconductor layer has a continuous functional layer structure: the first doped semiconductor layer is etched to form a mesa structure, or the second doped semiconductor layer is ion implanted to form an array of micro-structures. led;
  • the first doped semiconductor layer, the second doped semiconductor layer and the active layer are electrically isolated from each other.
  • the first doped semiconductor layer is connected to the driving panel 102 through the first contact 104
  • the second doped semiconductor layer is connected to the driving panel 102 through the second contact 106 .
  • the first electrode layer 103 is connected to the first doped semiconductor layer, and the second electrode layer 105 is connected to the second doped semiconductor layer.
  • the pixel array 100 is flattened to form a flat layer 108 .
  • Flattening methods include:
  • a photoresist matrix is formed through photoresist, and the light-emitting surface 122 of the pixel point 101 is exposed through spin coating, drying, exposure, and development; for example, a photoresist made of black matrix material is used;
  • photoresist as a mask, and then remove the mask to expose the light-emitting surface 122 of the pixel point 101;
  • the light-emitting surface 122 of the pixel point 101 is exposed through etching (dry etching or wet etching).
  • the material of the flat layer 108 includes inorganic materials or organic materials.
  • the inorganic materials include any one of Al, Ag, SiO 2 , Al 2 O 3 , ZrO 2 , TiO 2 , Si 3 N 4 , HfO 2 or A combination of several; organic materials include black matrix photoresist, color filter photoresist, polyimide, wall glue (BANK), Overcoat glue, near-UV negative photoresist, phenylpropylcyclobutene Any one or a combination of several.
  • the black matrix colloid is an organic black matrix photoresist.
  • a passivation layer 107 is deposited at the pixel point 101 .
  • the material of the passivation layer 107 and the flat layer 108 may be the same or different.
  • the material of the passivation layer 107 includes inorganic materials or organic materials.
  • the inorganic materials include any one or more of SiO 2 , Al 2 O 3 , ZrO 2 , TiO 2 , Si 3 N 4 , and HfO 2 A combination of; organic materials include any one of black matrix photoresist, color filter photoresist, polyimide, wall glue (BANK), Overcoat glue, near-UV negative photoresist, and phenylpropylcyclobutene species or a combination of several species.
  • the blocking layer 109 is covered above the flat layer 108.
  • the blocking layer 109 covers the entire light-emitting surface 122 of the pixel array 100 and needs to transmit the light emitted by the pixels 101, so the blocking layer 109 should have sufficient transparency.
  • the ground can be made of silicon dioxide, silicon nitride, alumina and other materials.
  • the pixel point 101 emits the first color light. In some embodiments, the light emitted by the pixel point 101 is any one of red light, green light, blue light, yellow light or ultraviolet light.
  • the grid layer 111 is disposed above the pixel point array 100, and the grid holes 123 of the grid layer 111 are disposed relative to each pixel point 101 to allow the first color light emitted by the pixel point 101 to pass through.
  • the grid layer 111 can be understood as a layer structure with a grid-like structure.
  • the grid-like structure has fences and grids surrounded by fences, where the grids are the grid holes 123 of the display device.
  • the number of grid holes 123 may be one or multiple.
  • the grid holes 123 may be arranged in a regular or irregular manner. It can be understood that the grid hole 123 of the grid layer 111 is aligned with the light exit surface 122 of the pixel point 101, so that the first color light emitted by the pixel point 101 can pass through. It can be understood that the grid hole 123 is as described above. Surrounded by a fence.
  • the grid layer 111 is disposed on the pixel array 100 without an intermediate layer between them; in some embodiments, when dry etching is used to form the grid layer 111, the pixels can be The above-mentioned barrier layer 109 is provided on the dot array 100, and the grid layer 111 is formed on the barrier layer 109.
  • the number of grid holes 123 in the grid layer 111 is consistent with the number of pixel points 101 in the pixel point array 100 , and the grid holes 123 are distributed above the light-emitting surface 122 of each pixel point 101 in a one-to-one correspondence. , thereby allowing the first color light emitted by the pixel point 101 to pass.
  • the grid layer 111 can be made of organic materials.
  • Optional organic materials include but are not limited to black matrix photoresist, color filter photoresist, polyimide, and wall adhesive (BANK). , Overcoat glue, SU-8 (near-UV negative photoresist), BCB (Benzocyclobutene, benzocyclobutene), etc.
  • the grid layer 111 can be made of inorganic materials.
  • inorganic materials include but are not limited to metals and metal oxides.
  • the metals include Al, Cu, Ag, etc.
  • the metal oxides include SiO 2 , Al 2 O 3 , ZrO 2 , TiO 2 , Si 3 N 4 , HfO 2 , etc.
  • a reflective layer 112 is also provided on the grid layer 111.
  • the reflective layer 112 reflects the light emitted from the light exit surface 122 of the pixel point 101 in the grid hole 123, thereby further improving the light effect.
  • the reflective layer 112 can be made of organic materials, and optional organic materials include but are not limited to highly reflective organic paints.
  • the reflective layer 112 can be made of inorganic materials.
  • Optional inorganic materials include but are not limited to metal materials, such as Al, Cu, Ag, etc.
  • the reflective layer 112 at least covers the sidewalls of the grid holes 123 and exposes the pixels 101. It can be understood that the grid layer 111 and the reflective layer 112 can be combined into a grid structure 110. On the grid structure 110 , the side walls of the grid holes 123 are completely covered by the reflective layer 112 , and the grid holes 123 are surrounded by the reflective layer 112 .
  • the reflective layer 112 not only covers the side walls of the grid holes 123 but also covers the top surface of the grid layer 111 , where the top surface is the surface away from the light-emitting surface 122 of the pixel point 101 .
  • the main reflective surface of the reflective layer 112 can be designed as a slope as shown in Figure 7. It can be understood that the reflective layer 112 is actually a three-dimensional structure.
  • the main reflective surface of layer 112 has a three-dimensional shape that is smaller at the bottom and larger at the top.
  • the cross-sectional size of the grid hole 123 gradually becomes larger along the direction away from the pixel point 101; wherein, the cross-section is a cross-section parallel to the light-emitting surface 122.
  • the cross-section can be a circular cross-section. Or a square cross-section, of course, the cross-section can also be an irregular-shaped cross-section.
  • the thickness accumulation effect of the wavelength conversion material can also be greatly improved, so that the wavelength conversion layer 113 can be is thicker, further improving light conversion efficiency.
  • the grid holes 123 of the grid layer 111 are formed by dry etching, and the display device needs to be provided with a blocking layer 109.
  • the blocking layer 109 covers the pixel array 100 and transmits the light emitted by the pixels 101; the grid layer 111 is disposed on the barrier layer 109, and the grid holes 123 expose the barrier layer 109.
  • the blocking layer 109 needs to transmit the first color light emitted by the pixel point 101, so the blocking layer 109 should have sufficient transparency, and generally can be made of silicon dioxide, silicon nitride, aluminum oxide and other materials.
  • the wavelength conversion layer 113 is formed above the grid layer 111 and includes at least a plurality of first wavelength conversion units 114.
  • the first wavelength conversion units 114 fill at least part of the grid holes 123.
  • the wavelength conversion unit 114 can convert the first color light emitted by the pixel point 101 into the second color light.
  • the patterning scheme of the wavelength conversion layer 113 can be chosen arbitrarily.
  • the wavelength conversion layer 113 is made of photoresist containing a wavelength conversion substance.
  • the wavelength conversion layer 113 is obtained through an exposure and development process, making the preparation process simpler and more controllable.
  • materials forming the wavelength conversion layer 113 include but are not limited to quantum dots, phosphors, etc., where the quantum dots may be colloidal quantum dots.
  • FIG. 11 is a partial enlarged view of FIG. 10 , which shows a size comparison between the first wavelength conversion unit 114 and the grid holes 123 .
  • the height h1 of the first wavelength conversion unit 114 is greater than the depth h2 of the grid holes 123 .
  • the grid layer 111 can be understood as the skeleton of the wavelength conversion layer 113, which can support the wavelength conversion layer 113, so that the wavelength conversion layer 113 can It is thicker and can greatly improve the light conversion efficiency.
  • the side surface of the wavelength conversion layer 113 is partially wrapped by the grid layer 111, and the contact area is increased, which can increase the adhesion, thereby improving the yield and enlarging the process window.
  • the pattern of the wavelength conversion layer 113 can be well protected, thereby effectively avoiding the impact of undercut (undercut) caused by photolithography development.
  • Graphics can be smaller, the process window is enlarged, and the yield is higher. Furthermore, only the portion of the wavelength conversion layer 113 higher than the grid layer 111 is exposed, and the exposure time is greatly reduced without causing overexposure.
  • the pattern of the wavelength conversion layer 113 can be designed to be smaller, which can be applied to small pixel sizes. For example, pixels with a size of less than 5 microns can be applied to products with high resolution and high pixel density.
  • the first wavelength conversion unit 114 of the wavelength conversion layer 113 completely covers the corresponding grid hole 123, and the projection of the first wavelength conversion unit 114 on the grid layer 111 is larger than the grid hole. Projection of 123 on raster layer 111. It can be understood that the upper size W1 of the first wavelength conversion unit 114 is larger than the upper size W2 of the grid of the grid layer 111 , where the so-called size includes length, width or diameter. That is to say, the wavelength conversion layer 113 partially covers the top surface of the grid layer 111 , where the top surface is the surface of the grid layer 111 facing away from the pixel array 100 .
  • the wavelength conversion layer 113 includes a first wavelength conversion unit 114 , and the first wavelength conversion unit 114 is at least filled in part of the grid holes 123 , that is, there may be a first wavelength conversion unit 114 in part of the grid holes 123 .
  • the wavelength conversion unit 114 may also have the first wavelength conversion unit 114 in all the grid holes 123 .
  • the wavelength conversion layer 113 includes a first wavelength conversion unit 114 and a second wavelength conversion unit 115, and the first wavelength conversion unit 114 and the second wavelength conversion unit 115 are filled in different grid holes 123; that is, , the first wavelength conversion unit 114 fills part of the grid holes 123, and the second wavelength conversion unit 115 can fill all the remaining grid holes 123, or only fill part of the remaining grid holes 123;
  • the two-wavelength conversion unit 115 may convert the first color light into the third color light.
  • transparent fillers are filled in the grid holes 123 that are not filled by the first wavelength conversion unit 114 and the second wavelength conversion unit 115 to form the transparent unit 125.
  • the material of the transparent unit 125 may be photoresist, Including but not limited to Overcoat glue, SU8 (near ultraviolet negative photoresist), BCB (Benzocyclobutene, benzocyclobutene), etc., and can also be SiO 2 , Al 2 O 3 , Si 3 N 4 , etc.
  • the wavelength conversion layer 113 further includes a third wavelength conversion unit 116; the first wavelength conversion unit 114, the second wavelength conversion unit 115 and the third wavelength conversion unit 116 are filled in different grid holes 123; that is, Say, the first wavelength conversion unit 114 fills part of the grid holes 123 , the second wavelength conversion unit 115 fills part of the remaining grid holes 123 , and the third wavelength conversion unit 116 fills the remaining part or all of the grid holes.
  • the grid hole 123; the third wavelength conversion unit 116 can convert the first color light into the fourth color light.
  • the shapes and dimensions of the second wavelength conversion unit 115 and the third wavelength conversion unit 116 relative to the grid holes 123 are similar to those of the first wavelength conversion unit 114, and the beneficial effects produced by the structures are also similar to those of the first wavelength conversion unit 114.
  • the effects of the wavelength conversion unit 114 are the same and will not be repeated here.
  • the material of the first wavelength conversion unit 114 includes quantum dots or phosphors; the material of the second wavelength conversion unit 115 includes quantum dots or phosphors; and the material of the third wavelength conversion unit 116 includes quantum dots or phosphors. .
  • the wavelength of the first wavelength conversion unit 114, the second wavelength conversion unit 115, and the third wavelength conversion unit 116 only needs to be longer than the wavelength of the pixel point 101.
  • the first color light emitted by the pixel point 101 is red light. In some embodiments, the light emitted by the pixel 101 is green light. In some embodiments, the light emitted by the pixel 101 is blue light. In some embodiments, the light emitted by the pixel point 101 is ultraviolet light.
  • the first color light emitted by the pixel point 101 is blue light
  • the first wavelength conversion unit 114 is a red light wavelength conversion layer
  • the second wavelength conversion unit 115 is a green light wavelength conversion layer.
  • the first color light emitted by the pixel 101 is ultraviolet light
  • the first wavelength conversion unit 114 is a red light wavelength conversion layer
  • the second wavelength conversion unit 115 is a blue light wavelength conversion layer
  • the third wavelength conversion unit 116 It is the green light wavelength conversion layer.
  • the first wavelength conversion unit 114 , the second wavelength conversion unit 115 and the third wavelength conversion unit 116 arbitrarily correspond to RGB (red, green, blue).
  • the first wavelength conversion unit 114 is red
  • the second wavelength conversion unit 115 is green
  • the third wavelength conversion unit 116 is blue.
  • a light-blocking layer 117 is also provided.
  • the light-blocking layer 117 is formed above the grid layer 111 .
  • the light-blocking layer 117 fills the gap of the wavelength conversion layer 113 . That is to say, the light blocking layer 117 covers the wavelength conversion layer. 113 is higher than the side surface of the grid layer 111, which can effectively avoid crosstalk between the pixels 101.
  • a filter layer 118 is also provided, and the filter layer 118 covers the wavelength conversion layer 113 .
  • the material forming the filter layer 118 includes, but is not limited to, organic color filter photoresist, Bragg distributed reflector, and the like.
  • the patterning scheme of the filter layer 118 can be selected arbitrarily, such as etching and transfer.
  • the filter layer 118 includes a plurality of first filter units 119.
  • One first filter unit 119 is provided corresponding to one first wavelength conversion unit 114.
  • the first filter unit 119 only allows the second color light to pass through. .
  • the filter layer 118 also includes a plurality of second filter units 120.
  • One second filter unit 120 is provided corresponding to a second wavelength conversion unit 115.
  • the second filter unit 120 only allows the third color light. pass.
  • the filter layer 118 also includes a plurality of third filter units 121.
  • One third filter unit 121 is provided corresponding to a third wavelength conversion unit 116.
  • the third filter unit 121 only allows the fourth color light. pass.
  • the first filter unit 119, the second filter unit 120 and the third filter unit 121 may be a red filter unit, a green filter unit and a blue filter unit respectively.
  • Embodiments of the present application also describe a method of manufacturing a display device.
  • the manufacturing method includes: providing a display device that includes a plurality of pixels 101 arranged in an array;
  • a grid layer 111 is formed above the pixel point 101.
  • the grid layer 111 includes a plurality of grid holes 123 arranged in an array.
  • the grid holes 123 are arranged relative to the pixel point 101 and allow the pixel point 101 to emit light of the first color to pass through;
  • a wavelength conversion layer 113 is formed above the grid layer 111.
  • the wavelength conversion layer 113 at least includes a plurality of first wavelength conversion units 114.
  • the first wavelength conversion units 114 fill at least part of the grid holes 123.
  • the first wavelength conversion unit 114 can convert the first wavelength conversion unit 114 into the first wavelength conversion unit 114.
  • One color light is converted into a second color light.
  • a display device is provided first. It can be understood that providing the display device may include preparing pixel points 101 , a driving panel 102 , a first doped semiconductor layer, and a first contact 104 , the process of some or all components of the second doped semiconductor layer, the second contact 106, the passivation layer 107, and the planarization layer 108.
  • the preparation of each of the above components can be selected from existing methods. Among them, the connection structure of Micro-LED can adopt a common anode or a common cathode or independent structures. Those skilled in the art can make a choice according to needs. It can be understood that providing a display device may also involve directly purchasing a display device, which has some or all of the above-mentioned components including the pixels 101, or may also include other components known in the art.
  • providing a display device includes:
  • a driving panel 102 is provided, and an LED epitaxial layer is formed on the driving panel 102.
  • the LED epitaxial layer includes a first doped semiconductor layer, a second doped semiconductor layer, and an active layer located between the two;
  • Pixel points 101 are formed on the LED epitaxial layer.
  • the pixel points 101 are micro light-emitting diodes.
  • the steps of forming micro light-emitting diodes include:
  • the second doped semiconductor layer is etched to form a mesa structure, or the second doped semiconductor layer is ion implanted to form an array of micro light-emitting diodes.
  • the second doped semiconductor layer includes a continuous functional layer structure: the first doped semiconductor layer is etched to form a mesa structure, or the first doped semiconductor layer is ion implanted to form an array of micro-structures. led;
  • the first doped semiconductor layer, the second doped semiconductor layer and the active layer are electrically isolated from each other.
  • a planarization process is performed on the pixels 101 to form the flat layer 108.
  • the barrier layer 109 when dry etching is used to form the grid holes 123 of the grid layer 111 , the barrier layer 109 should also be formed on the pixel point 101 first, and then the barrier layer 109 should be formed on the barrier layer 109 .
  • the grid holes 123 are dry-etched to form the grid layer 111. It can be understood that the barrier layer 109 is used to protect the pixels 101 during the dry etching process.
  • the blocking layer 109 needs to transmit the light emitted by the pixel point 101, so the blocking layer 109 should have sufficient transparency.
  • it can be made of silicon dioxide, silicon nitride, aluminum oxide and other materials, and can be formed by spin coating or other methods. on the pixel array 100.
  • the process of forming the grid layer 111 includes: first forming a grid layer coating 111a above the pixel point 101, and etching the grid layer coating 111a.
  • the grid holes 123 are arranged on the pixel points 101 in one-to-one correspondence, and are aligned with the light-emitting surfaces 122 of the pixel points 101, so that the pixel points 101 emit light of the first color to pass through.
  • the grid layer coating 111a can be made of organic materials.
  • organic materials include but are not limited to black matrix photoresist, color filter photoresist, polyimide, barrier glue ( BANK), Overcoat glue, SU-8 (near-UV negative photoresist), BCB (Benzocyclobutene, benzocyclobutene), etc.
  • the patterning scheme of the grid layer 111 is photolithography or dry etching.
  • the grid layer coating 111a may be made of inorganic materials.
  • inorganic materials include but are not limited to metals and metal oxides.
  • the metals include Al, Cu, Ag, etc.
  • the metal oxides include SiO 2 , Al 2 O 3 , ZrO 2 , TiO 2 , Si 3 N 4 , HfO 2 etc.
  • the patterning solution of the grid layer 111 is to use a patterned mask followed by dry etching.
  • the grid layer 111 can be formed by mask transfer. Specifically, a precursor layer can be provided during the transfer process, and the precursor layer can be processed into a precursor in the shape of the grid layer 111.
  • the precursor Layers can be shaped using a variety of different techniques. A dry plasma etch is applied to the precursor layer, transferring the shape to the underlying layer.
  • those skilled in the art can choose a known method to form the grid layer 111 on the pixel array 100 as needed, and make the grid holes 123 correspond to the pixels 101 one-to-one, exposing the light of the pixels 101 Face 122.
  • the reflective layer 112 also includes: forming a reflective layer 112 on the grid layer 111.
  • the reflective layer 112 at least covers the side walls of the grid hole 123 and exposes the pixels. At point 101, through the reflection of the first color light by the reflective layer 112, the light effect can be further improved.
  • forming the reflective layer 112 on the grid layer 111 includes: first forming the reflective material layer 112a through deposition, and then exposing the light-emitting surface 122 of the pixel point 101 through dry etching, The reflective layer 112 only covers the side walls of the grid holes 123 .
  • the reflective material layer 112a can be made of organic materials, and optional organic materials include but are not limited to highly reflective organic paints.
  • the reflective material layer 112a can be made of inorganic materials.
  • Optional inorganic materials include but are not limited to metal materials, such as Al, Cu, Ag, etc.
  • the reflective layer 112 can be made by ALD (Atomic layer deposition, atomic layer deposition). Deposition), CVD (Chemical Vapor Deposition, chemical vapor deposition), evaporation, sputtering and other methods are deposited on the surface of the grid layer 111.
  • dry etching is used to form the reflective layer 112.
  • the dry etching includes but is not limited to IBE (Ion Beam Etch), ICP (Inductively coupled plasma). ) etching.
  • the entire surface of the reflective layer 112 can be etched after deposition, so that the bottom of the grid hole 123 is etched cleanly to expose the barrier layer 109.
  • the reflective layer 112 will be re-depositioned during the etching process ( Plasma redeposition) effect causes the side wall reflective layer 112 to thicken, enhances the reflective effect, and strengthens the stability of the grid layer 111 and the overall structure (as shown in Figure 7). This can simplify the preparation process and eliminate the need for additional photolithography steps to produce etching masks.
  • the reflective layer 112 can also cover the top surface of the grid layer 111 .
  • the main reflective surface of the reflective layer 112 can be formed into a slope as shown in Figures 7 and 8. It can be understood that, in fact, The inclined surface is the side wall of the grid hole 123 and is a three-dimensional surface. In this embodiment, along the direction away from the pixel point 101, the cross-sectional size of the grid hole 123 gradually becomes larger; wherein, the cross-section is a cross-section parallel to the light-emitting surface 122.
  • the cross section can be a circular cross section or a square cross section. Of course, the cross section can also be an irregular shaped cross section.
  • the thickness accumulation effect of the wavelength conversion material can also be greatly improved, so that the wavelength conversion layer 113 can be is thicker, further improving light conversion efficiency.
  • the grid holes 123 can form a three-dimensional structure with a smaller bottom and a larger top, and the inner surface can form a slope, so that after covering the reflective layer 112,
  • the reflective layer 112 also continues the characteristic of being small at the bottom and large at the top, and the reflective layer 112 is also a bevel.
  • the reflective layer 112 is formed into a bevel only when it is formed.
  • the wavelength conversion layer 113 is formed above the grid layer 111 and includes at least a plurality of first wavelength conversion units 114.
  • the first wavelength conversion units 114 fill at least part of the grid holes 123.
  • the first wavelength conversion units 114 can convert The first color light emitted by the pixel point 101 is converted into the second color light.
  • the patterning scheme of the wavelength conversion layer 113 can be chosen arbitrarily.
  • the wavelength conversion layer 113 is made of photoresist containing a wavelength conversion substance.
  • the wavelength conversion layer 113 is obtained through an exposure and development process, making the preparation process simpler and more controllable.
  • the materials of the wavelength conversion layer include but are not limited to quantum dots, phosphors, etc.
  • the quantum dots may be colloidal quantum dots.
  • FIG. 11 is a partial enlarged view of FIG. 10 , which shows a size comparison between the first wavelength conversion unit 114 and the grid holes 123 .
  • the height h1 of the first wavelength conversion unit 114 is greater than the depth h2 of the grid holes 123 .
  • the grid layer 111 can be understood as the skeleton of the wavelength conversion layer 113, which can support the wavelength conversion layer 113, so that the wavelength conversion layer 113 can
  • the thicker reflective layer 112 on the side wall can improve the light extraction efficiency, thus greatly improving the light conversion efficiency.
  • the side surface of the wavelength conversion layer 113 is partially wrapped by the grid layer 111, and the contact area is increased, which can increase the adhesion, thereby improving the yield and enlarging the process window.
  • the pattern of the wavelength conversion layer 113 can be well protected, thereby effectively avoiding the influence of undercut (undercut) caused by photolithography development. It can be smaller, the process window is enlarged, and the yield is higher. Furthermore, only the portion of the wavelength conversion layer 113 that is higher than the grid layer 111 is exposed, and the exposure time is greatly reduced without causing overexposure. The pattern of the wavelength conversion layer 113 can be smaller, so it can be applied to high resolution and high pixels. Density product.
  • the first wavelength conversion unit 114 of the wavelength conversion layer 113 completely covers the corresponding grid hole 123, and the projection of the first wavelength conversion unit 114 on the grid layer 111 is larger than the grid hole. Projection of 123 on raster layer 111. It can be understood that the upper size W1 of the first wavelength conversion unit 114 is larger than the upper size W2 of the grid of the grid layer 111 , where the so-called size includes length, width or diameter. That is to say, the wavelength conversion layer 113 partially covers the top surface of the grid layer 111 , where the top surface is the surface of the grid layer 111 facing away from the pixel array 100 .
  • forming the wavelength conversion layer 113 includes forming a first wavelength conversion unit 114.
  • the first wavelength conversion unit 114 at least fills part of the Grid holes 123.
  • the first wavelength conversion material layer 114a is formed by spin coating and drying, and then the first wavelength conversion unit 114 is formed in part or all of the grid holes 123 by exposure and development.
  • forming the wavelength conversion layer 113 includes forming first wavelength conversion units 114 and second wavelength conversion units 115 respectively, and the first wavelength conversion units 114 and the second wavelength conversion units 115 are filled in different grid holes 123 .
  • the first wavelength conversion material layer 114a is formed by spin coating and drying, and then the first wavelength conversion unit 114 is formed in part or all of the grid holes 123 by exposure and development; and then the first wavelength conversion material layer 114a is formed by spin coating and drying.
  • the second wavelength conversion material layer 115a is dry-formed, and then the second wavelength conversion unit 115 is formed in different grid holes 123 through exposure and development.
  • the transparent unit 125 is also formed in the remaining grid holes 123.
  • forming the wavelength conversion layer 113 also includes forming a third wavelength conversion unit 116; a first wavelength conversion unit 114, a second wavelength conversion unit 115, and a third wavelength conversion unit 114.
  • the conversion units 116 fill different grid holes 123 .
  • the first wavelength conversion material layer 114a is formed by spin coating and drying, and then the first wavelength conversion unit 114 is formed in part or all of the grid holes 123 by exposure and development; and then the first wavelength conversion material layer 114a is formed by spin coating and drying.
  • the second wavelength conversion material layer 115a is dry-formed, and then the second wavelength conversion unit 115 is formed in different grid holes 123 through exposure and development; finally, the third wavelength conversion material layer 116a is formed through spin coating and drying, and then through exposure , developing to form third wavelength conversion units 116 in different grid holes 123 .
  • first wavelength conversion material layer 114a For the first wavelength conversion material layer 114a, the second wavelength conversion material layer 115a, the third wavelength conversion material layer 116a and the first wavelength conversion unit 114, the second wavelength conversion unit 115, and the third wavelength conversion unit 116 in the aforementioned display device The description has been made and will not be repeated here. It is understood that those skilled in the art can make a specific color selection according to actual needs.
  • a light blocking layer 117 may also be formed on the grid layer 111 to fill the gaps of the wavelength conversion layer 113 . It can be understood that the light-blocking layer 117 covers the side surface of the wavelength conversion layer 113 that is higher than the grid layer 111 to avoid crosstalk between the pixels 101 .
  • the light blocking layer 117 is formed of materials including but not limited to metal, organic black matrix photoresist, color filter photoresist, polyimide, etc.
  • the formation scheme of the light blocking layer 117 can be selected arbitrarily.
  • a filter layer 118 may also be covered on the wavelength conversion layer 113 .
  • the material forming the filter layer 118 includes, but is not limited to, organic color filter photoresist, Bragg distributed reflector, and the like.
  • the patterning scheme of the filter layer 118 can be selected arbitrarily, such as etching and transfer.
  • forming the filter layer 118 includes forming a plurality of first filter units 119.
  • One first filter unit 119 is provided corresponding to one first wavelength conversion unit 114.
  • the first filter unit 119 only allows the second color. Light passes through.
  • forming the filter layer 118 further includes forming a plurality of second filter units 120.
  • One second filter unit 120 is provided corresponding to one second wavelength conversion unit 115. The second filter unit 120 only allows the third Color light passes through.
  • forming the filter layer 118 further includes forming a plurality of third filter units 121.
  • One third filter unit 121 is provided corresponding to a third wavelength conversion unit 116.
  • the third filter unit 121 only allows the fourth Color light passes through.
  • the first filter unit 119, the second filter unit 120 and the third filter unit 121 may be a red filter unit, a green filter unit and a blue filter unit respectively.
  • the light-emitting surface 122 is square.
  • the shape of the grid holes 123 in the grid layer 111 of the grid structure 110 can also be square.
  • the light-emitting surface 122 is circular.
  • the shape of the grid holes 123 may also be circular.
  • FIG 21 it is a schematic diagram of the Bayer pattern of the pixels 101 (pixels) of the display unit 124 in Figures 19 and 20, that is, the pixel array 100 is a Bayer array; as shown in Figure 22, Figures 19 and 20 are schematic diagrams of a stripe pattern of 101 pixels (pixels) in the display unit 124, that is, the pixel array 100 is a stripe pattern.
  • the first color light is ultraviolet light
  • the first wavelength conversion unit 114 is red light
  • the second wavelength conversion unit 115 is green
  • the third wavelength conversion unit 116 is blue
  • the pixels in Figures 21 and 22 The arrangement of 101 can realize single-chip full-color Micro-LED display.
  • the first color light is blue light
  • the first wavelength conversion unit 114 is red light
  • the second wavelength conversion unit 115 is green light
  • the transparent unit 125 is a transparent filler to transmit the first color light; in this embodiment, a single-chip full-color Micro-LED display can be realized according to the arrangement of the pixels 101 in Figures 21 and 22.

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Abstract

本申请公开了显示器件及其制备方法，属于半导体器件技术领域，该制备方法包括提供显示装置，显示装置包括阵列排布的多个像素点，像素点发出第一颜色光；在像素点上方形成栅格层，栅格层包括阵列排布的多个栅格孔，栅格孔相对于像素点设置，第一颜色光通过栅格孔；在栅格层上方形成波长转换层，波长转换层包括多个第一波长转换单元，第一波长转换单元填充至少部分栅格孔，第一波长转换单元将第一颜色光转换为第二颜色光。该方法使波长转换层更厚且厚度更可控，光转换效率随之提升；有利于提升波长转换层的粘附性，波长转换层被栅格层保护，避免光刻显影导致的钻蚀影响，图形可以更小，工艺窗口拉大，良率更高，可应用于高分辨率高像素密度的产品。

Description

显示器件及其制备方法
本申请要求于2022年04月27日提交中国专利局、申请号为202210452338.5、发明名称为“显示器件及其制备方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请属于半导体器件技术领域，具体涉及显示器件及其制备方法。
 背景技术
Micro-LED又称微型发光二极管，是指高密度集成的LED阵列，阵列中的LED像素点距离在0.1-100微米量级，每一个LED像素都能自发光。由于同等面积的芯片上可以获得更高的集成数量，极大地提高了Micro-LED微显示的集成密度，从而提升显示分辨率，同时保证高亮度，可以实现低能耗，高亮度，高分辨率的微型显示器设计。
为了实现Micro-LED微显示的彩色图像显示，通过在LED像素点上形成波长转换层来改变LED像素点的发光颜色。目前，通过将光致发光材料分散在光刻胶里并通过光刻方法来图形化，以在LED阵列上形成波长转换层，波长转换层的光转换效率也因为波长转换层厚度的提升而提高，该彩色化方案工艺简单，生产效率高。但是，波长转换层的分辨率却因为波长转换层严重的散射现象而受限。为了提升分辨率得到5µm以下的图形，光致发光材料的浓度必须控制在一个较低的水平，但相应的吸收和转换特性会发生退化。因此，直接通过光刻胶这种方法来平衡分辨率和转化效率是十分有挑战性的。
 技术问题
本申请提供显示器件的制备方法，目的在于克服现有技术中形成波长转换层的方法会导致分辨率和转化效率无法兼顾的缺陷；本申请的另一目的是提供显示器件。
 技术解决方案
本申请所述的显示器件的制备方法，包括：
提供显示装置，所述显示装置包括阵列排布的多个像素点，所述像素点发出第一颜色光；
在所述像素点上方形成栅格层，所述栅格层包括阵列排布的多个栅格孔，所述栅格孔相对于所述像素点设置，所述第一颜色光通过所述栅格孔；
在所述栅格层上方形成波长转换层，所述波长转换层包括多个第一波长转换单元，所述第一波长转换单元填充至少部分所述栅格孔，所述第一波长转换单元将所述第一颜色光转换为第二颜色光。
在一些实施例中，所述像素点阵列排布形成像素点阵列；所述像素点选自选有机发光二极管（OLED, Organic Light-Emitting Diode）、液晶显示器（LCD ，Liquid Crystal Display）和微型发光二极管中任意一种。所述像素点发出的光为红光、绿光、蓝光、黄光或紫外光中的任意一种。所述第一波长转换单元的波长比像素点的波长更长。
在一些实施例中，形成所述栅格层包括：
在所述像素点上方形成栅格层涂层，刻蚀所述栅格层涂层形成所述栅格孔。
在一些实施例中，采用干法刻蚀工艺在所述栅格层涂层形成所述栅格孔。
在一些实施例中，采用光刻工艺在所述栅格层涂层形成所述栅格孔。
在一些实施例中，在形成所述栅格层之后，且在形成所述波长转换层之前，包括：
在所述栅格层上形成反光层，所述反光层至少覆盖所述栅格孔的侧壁且暴露所述像素点。
在一些实施例中，沿着远离所述像素点的方向，所述栅格孔的横截面尺寸逐渐变大。其中，所述横截面为平行于所述像素点出光面的截面。
在一些实施例中，包括：在所述像素点上方覆设阻挡层，所述栅格层位于所述阻挡层上方；其中，通过刻蚀形成所述栅格孔使所述栅格孔的底部暴露所述阻挡层，所述第一颜色光通过所述阻挡层。
在一些实施例中，所述第一波长转换单元的高度大于所述栅格孔的深度且所述第一波长转换单元完全覆盖对应的所述栅格孔，所述第一波长转换单元在所述栅格层上的投影大于所述栅格孔在所述栅格层上的投影。
在一些实施例中，形成所述波长转换层之后，在所述栅格层上方形成挡光层，所述挡光层填充所述波长转换层的间隙。
在一些实施例中，所述波长转换层的材质为含有波长转换物质的光刻胶，通过曝光显影形成所述波长转换层。
在一些实施例中，形成所述波长转换层之后，在所述波长转换层上覆盖滤光层，所述滤光层至少包括多个第一滤光单元，一个所述第一滤光单元对应一个所述第一波长转换单元设置，所述第一滤光单元只允许所述第二颜色光通过。
在一些实施例中，提供显示装置包括：
提供驱动面板，在所述驱动面板上形成LED外延层，所述LED外延层包括第一掺杂型半导体层、第二掺杂型半导体层以及位于两者之间的有源层；
在所述LED外延层上形成所述像素点，所述像素点为微型发光二极管，形成所述微型发光二极管的步骤包括：
当第一掺杂型半导体层包括连续的功能层结构：对第二掺杂型半导体层进行刻蚀形成台面结构，或者对第二掺杂型半导体层进行离子注入，形成阵列排布微型发光二极管；
或者，当第二掺杂型半导体层包括连续的功能层结构：对第一掺杂型半导体层进行刻蚀形成台面结构，或者对第一掺杂型半导体层进行离子注入，形成阵列排布微型发光二极管；
或者，每个像素点中，第一掺杂型半导体层、第二掺杂型半导体层和有源层之间互相隔离。
在一些实施例中，形成所述波长转换层还包括形成第二波长转换单元，所述第二波长转换单元将所述第一颜色光转换为第三颜色光，所述第一波长转换单元和所述第二波长转换单元填充于不同的所述栅格孔。
在一些实施例中，所述滤光层还包括多个第二滤光单元，一个所述第二滤光单元对应一个所述第二波长转换单元设置，所述第二滤光单元只允许所述第三颜色光通过。
在一些实施例中，形成所述波长转换层还包括形成第三波长转换单元，所述第三波长转换单元将所述第一颜色光转换为第四颜色光，所述第一波长转换单元、所述第二波长转换单元以及所述第三波长转换单元填充于不同的所述栅格孔。第三波长转换单元的波长比像素点的波长更长即可。
在一些实施例中，所述滤光层还包括多个第三滤光单元，一个所述第三滤光单元对应一个所述第三波长转换单元设置，所述第三滤光单元只允许所述第四颜色光通过。
在一些实施例中，包括形成透明单元，所述透明单元透过所述第一颜色光，所述第一波长转换单元、所述第二波长转换单元和所述透明单元填充于不同的所述栅格孔。
在一些实施例中，对所述显示装置平坦化处理，平坦化处理的方式包括：
在所述像素点之间形成平坦层，所述平坦层的材质为光刻胶，通过光刻工艺使所述平坦层露出所述像素点的出光面；
或者，形成平坦层之后，在所述平坦层上形成图案化的掩膜，然后通过刻蚀使所述平坦层露出所述像素点的出光面并去除所述掩膜；
或者，形成平坦层之后，通过刻蚀使所述平坦层露出所述像素点的出光面。
在一些实施例中，所述平坦层的材质包括无机材料或者有机材料，所述无机材料包括Al、Ag、SiO 2、Al 2O 3、ZrO 2、TiO 2、Si 3N 4、HfO 2中任意一种或几种的组合；所述有机材料包括黑矩阵光刻胶、彩色滤光光刻胶、聚酰亚胺、挡墙胶（BANK）、Overcoat胶、近紫外光负光刻胶、苯丙环丁烯中任意一种或几种的组合。
相应的，本申请所述的显示器件，包括：
显示装置，所述显示装置包括阵列排布的多个像素点，所述像素点发出第一颜色光；
栅格层，所述栅格层包括阵列排布的多个栅格孔，所述栅格孔相对于所述像素点设置，所述第一颜色光通过所述栅格孔；
波长转换层，所述波长转换层包括多个第一波长转换单元，所述第一波长转换单元填充至少部分所述栅格孔，所述第一波长转换单元将所述第一颜色光转换为第二颜色光。
在一些实施例中，还包括：
反光层，所述反光层至少覆盖所述栅格孔的侧壁且暴露所述像素点。
在一些实施例中，沿着远离所述像素点的方向，所述栅格孔的横截面尺寸逐渐变大。其中，所述横截面为平行于所述像素点出光面的截面。
在一些实施例中，包括：阻挡层，所述阻挡层覆设于所述像素点上方，所述第一颜色光通过所述阻挡层；所述栅格层位于所述阻挡层上方，所述栅格孔的底部暴露所述阻挡层。
在一些实施例中，所述第一波长转换单元的高度大于所述栅格孔的深度且所述第一波长转换单元完全覆盖对应的所述栅格孔，所述第一波长转换单元在所述栅格层上的投影大于所述栅格孔在所述栅格层上的投影。
在一些实施例中，包括：
挡光层，所述挡光层填充所述波长转换层的间隙。
在一些实施例中，包括：
滤光层，所述滤光层至少包括多个第一滤光单元，一个所述第一滤光单元对应一个所述第一波长转换单元设置，所述第一滤光单元只允许所述第二颜色光通过。
在一些实施例中，所述波长转换层还包括第二波长转换单元，所述第二波长转换单元将所述第一颜色光转换为第三颜色光，所述第一波长转换单元和所述第二波长转换单元填充于不同的所述栅格孔。
在一些实施例中，所述滤光层还包括多个第二滤光单元，一个所述第二滤光单元对应一个所述第二波长转换单元设置，所述第二滤光单元只允许所述第三颜色光通过。
在一些实施例中，所述波长转换层还包括第三波长转换单元；所述第三波长转换单元将所述第一颜色光转换为第四颜色光，所述第一波长转换单元、所述第二波长转换单元和所述第三波长转换单元填充于不同的所述栅格孔。
在一些实施例中，所述滤光层还包括多个第三滤光单元，一个所述第三滤光单元对应一个所述第三波长转换单元设置，所述第三滤光单元只允许所述第四颜色光通过。
在一些实施例中，包括透明单元，所述透明单元透过所述第一颜色光，所述第一波长转换单元、所述第二波长转换单元和所述透明单元填充于不同的所述栅格孔。
在一些实施例中，包括：
驱动面板，所述驱动面板用于驱动设置于所述驱动面板上方的所述像素点。
在一些实施例中，所述像素点位于相同驱动面板上方。
在一些实施例中，所述驱动面板是硅基CMOS或薄膜场效应管。
在一些实施例中，所述像素点选自有机发光二极管、LCD和微型发光二极管中任意一种。
在一些实施例中，包括：
平坦层，所述平坦层覆盖在所述像素点之间；所述平坦层的材质包括无机材料或者有机材料，所述无机材料包括Al、Ag、SiO 2、Al 2O 3、ZrO 2、TiO 2、Si 3N 4、HfO 2中任意一种或几种的组合；所述有机材料包括黑矩阵光刻胶、彩色滤光光刻胶、聚酰亚胺、挡墙胶（BANK）、Overcoat胶、近紫外光负光刻胶、苯丙环丁烯中任意一种或几种的组合。
在一些实施例中，所述像素点为微型发光二极管，所述微型发光二极管的宽度为100纳米-100微米；所述像素点阵列排布形成像素点阵列，相邻所述像素点的间距为1-10微米。相邻所述像素点的间距为相邻的两个像素点中心点之间的距离。
 有益效果
相较于现有技术，本申请的显示器件的制备方法，包括提供显示装置，显示装置包括阵列排布的多个像素点，像素点发出第一颜色光；在像素点上方形成栅格层，栅格层包括阵列排布的多个栅格孔，栅格孔相对于像素点设置，第一颜色光通过栅格孔；在栅格层上方形成波长转换层，波长转换层包括多个第一波长转换单元，第一波长转换单元填充至少部分栅格孔，第一波长转换单元将第一颜色光转换为第二颜色光。该制备方法通过在像素点上设置栅格层，栅格层的栅格状构造能够对形成的波长转换层（例如量子点光刻胶，Quantum dot photoresist，简称QDPR）提供支撑，有利于波长转换层的厚度积累，从而使波长转换层的厚度更厚更可控，光转换效率也随着波长转换层的厚度增大而提升；通过波长转换层填充栅格孔，使波长转换层与栅格层的接触面积增大，提升波长转换层粘附性，提高光刻良率，拉大工艺窗口；同时，由于波长转换层填充于栅格孔，光刻过程中波长转换层能够被栅格层很好的保护，在形成波长转换层时曝光时间可以减少，不会造成过曝，去除光刻显影导致的undercut（钻蚀）影响，波长转换层的图形可以更小，工艺窗口拉大，良率更高，可应用于高分辨率和高像素密度的产品。
与现有技术相比，本申请的显示器件包括显示装置，显示装置包括阵列排布的多个像素点，像素点发出第一颜色光；栅格层，栅格层包括阵列排布的多个栅格孔，栅格孔相对于像素点设置且使像素点发出第一颜色光通过；波长转换层，波长转换层至少包括多个第一波长转换单元，第一波长转换单元填充至少部分栅格孔，第一波长转换单元可以将第一颜色光转换为第二颜色光。可以理解的是，该显示器件与制备方法具有相同的技术特征，可以具有相同的有益效果，在此不再赘述。
进一步的，本申请的一些实施例中，波长转换层是通过曝光显影工艺获得，工艺更为简单。
进一步的，本申请的一些实施例中，栅格层上形成反光层，能够提升光效；进一步的，在本申请的一些实施例中，沿着远离像素点的方向，栅格孔的横截面尺寸逐渐变大，使得反光层呈现下小上大的逐渐扩张的构型，反光层形成斜面，提升反射效率，像素点的出射光因为反光层的反射进一步增加波长转换层的光转换效率。
进一步的，本申请的一些实施例中，像素点选自有机发光二极管（OLED, Organic Light-Emitting Diode）、液晶显示器（LCD ，Liquid Crystal Display）和微型发光二极管中任意一种，实现微型显示器件的制备，实现微型显示芯片全彩显示的同时，光源转换效率高。
 附图说明
图1为本申请实施例提供的显示器件的剖视结构示意图；
图2为提供的显示装置的剖视结构示意图；
图3为显示器件在制备过程中在显示装置上方形成阻挡层后的剖视结构示意图；
图4为显示器件在制备过程中形成栅格层涂层后的剖视结构示意图；
图5为显示器件在制备过程中形成栅格层后的剖视结构示意图；
图6为显示器件在制备过程中形成反光材料层的剖视结构示意图；
图7为显示器件在制备过程中形成反光层后的一种剖视结构示意图；
图8为显示器件在制备过程中形成反光层后的另一种剖视结构示意图；
图9为显示器件在制备过程中形成第一波长转换材料层的剖视结构示意图；
图10为显示器件在制备过程中形成第一波长转换单元后的剖视结构示意图；
图11为图10的局部结构放大示意图；
图12为显示器件在制备过程中形成第二波长转换材料层的剖视结构示意图；
图13为显示器件在制备过程中形成第二波长转换单元后的剖视结构示意图；
图14为显示器件在制备过程中形成第三波长转换材料层的剖视结构示意图；
图15为显示器件在制备过程中形成第三波长转换单元后的剖视结构示意图；
图16为显示器件在制备过程中形成的波长转换层仅具有第一波长转换单元和第二波长转换单元的剖视结构示意图；
图17为显示器件在制备过程中形成挡光层后的剖视结构示意图；
图18为显示器件在制备过程中形成滤光层后的剖视结构示意图；
图19为本申请实施例中提供的显示器件的一种结构的俯视示意图；
图20为本申请实施例中提供的显示器件的另一种结构的俯视示意图；
图21为像素点按照拜尔阵列排布的结构示意图；
图22为像素点按照条形阵列排布的结构示意图；
附图标记：100-像素点阵列；101-像素点；102-驱动面板；103-第一电极层；104-第一触点；105-第二电极层；106-第二触点；107-钝化层；108-平坦层；109-阻挡层；110-栅格结构；111-栅格层；111a-栅格层涂层；112-反光层；112a-反光材料层；113-波长转换层；114-第一波长转换单元；114a-第一波长转换材料层；115-第二波长转换单元；115a-第二波长转换材料层；116-第三波长转换单元；116a-第三波长转换材料层；117-挡光层；118-滤光层；119-第一滤光单元；120-第二滤光单元；121-第三滤光单元；122-出光面；123-栅格孔；124-显示单元；125-透明单元。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
需要特别说明，在本申请的描述中，术语“在…上”、“在…之上”、“在…上面”、“在…上方”的含义应该以最广义的方式解释，意味着包含这些术语的描述解释为“部件可以以直接接触的方式设置在另一部件上，也可以在部件与部件之间存在中间部件或层”。
此外，为了便于描述，本申请还可能使用诸如“在…下”、“在…下方”、“在…之下”、“在…上”、“在…之上”、“在…上方”、“下部”、“上部”等空间相对术语来描述一个元件或部件与附图中所示的另一元件或部件的关系。除了在图中描述的方位之外，空间相对术语还意图涵盖装置在使用或操作中的不同方位。设备可以以其他方式定向（旋转90°或以其他定向），并且在本申请中使用的空间相对描述语可以被同样地相应地解释。
本申请中所使用的术语“层”是指包括具有一定厚度的区域的材料部分。层可以在整个下层或上层结构上延伸，或者可以在下层或上层结构的局部范围延伸。此外，层可以是均质或不均质连续结构的区域，其厚度小于连续结构的厚度。例如，层可以位于连续结构的顶表面和底表面之间或在其之间的任何一对水平平面之间。层可以水平地、垂直地和/或沿着锥形表面延伸。一层可以包括多层。例如，半导体层可以包括一个或多个掺杂或未掺杂的半导体层，并且可以具有相同或不同的材料。
本申请的实施例描述了显示器件及其制备方法，如图1所示，该显示器件，包括具有像素点101的显示装置、栅格层111和波长转换层113。
在一些实施例中，显示装置是像素点101的载体，像素点101在显示装置中呈阵列排布，形成像素点阵列100，可以理解的是，在像素点阵列100中可包括多个像素点101，各像素点101呈现规律或者不规律的阵列式排布。
在一些实施例中，显示装置的像素点101选自有机发光二极管、LCD和微型发光二极管中任意一种。
在一些实施例中，像素点101使用微型发光二极管（Micro light-emitting diode，简称Micro-LED）结构，Micro-LED的尺寸缩小到100纳米-100微米。像素点阵列100为Micro-LED阵列，Micro-LED阵列高度集成，阵列中的Micro-LED的像素点101的距离缩小至10微米量级。
Micro-LED的显示装置是将10微米尺寸甚至更小尺寸的Micro-LED的像素点101连接到驱动面板102上，实现对每个Micro-LED的像素点101发光亮度、时长的精确控制。在一些实施例中，阵列中的Micro-LED的像素点101的距离低于5微米。
在一些实施例中，显示装置包括驱动面板102，驱动面板102是硅基CMOS（Complementary Metal Oxide Semiconductor，互补金属氧化物半导体）或薄膜场效应管。硅基CMOS以硅为衬底的芯片。
在一些实施例中，为了制造Micro-LED的显示装置，将外延层键合到驱动面板102。驱动面板102包括CMOS背板或TFT玻璃基板的显示基板。然后，在外延层上形成Micro-LED的像素点阵列100。
在一些实施例中，在驱动面板102上形成LED外延层，在LED外延层上形成阵列排布的微型发光二极管，每个像素点101为一个微型发光二极管。
在一些实施例中，Micro-LED的连接结构可以是共阴极的或者共阳极的或者各自独立的。
在一些实施例中，可通过连续的阴极半导体层的连接实现共阴极结构。在一些实施例中，还可以采用共阳极结构或者各自独立的结构，只要能够实现像素点101点亮发光即可。
在一些实施例中，LED外延层包括第一掺杂型半导体层、第二掺杂型半导体层以及位于两者之间的有源层；具体包括：
当第一掺杂型半导体层为连续的功能层结构：对第二掺杂型半导体层进行刻蚀形成台面结构，或者对第二掺杂型半导体层进行离子注入，形成阵列排布微型发光二极管；
或者，当第二掺杂型半导体层为连续的功能层结构：对第一掺杂型半导体层进行刻蚀形成台面结构，或者对第二掺杂型半导体层进行离子注入，形成阵列排布微型发光二极管；
或者每个LED外延层中，第一掺杂型半导体层、第二掺杂型半导体层和有源层之间互相电隔离。
在一些实施例中，第一掺杂型半导体层通过第一触点104与驱动面板102连接，第二掺杂型半导体层通过第二触点106与驱动面板102连接。
其中，第一电极层103与第一掺杂型半导体层连接，第二电极层105与第二掺杂型半导体层连接。
在一些实施例中，对像素点阵列100进行平坦化处理，形成平坦层108。平坦化处理的方式包括：
进行平坦化处理，使像素点101之间具有平坦的表面；
通过光刻胶形成光刻胶矩阵，通过旋涂、烘干、曝光、显影，露出像素点101的出光面122；例如采用黑矩阵材质的光刻胶；
或者，使用光刻胶做掩膜，然后去除掩膜，露出像素点101的出光面122；
或者，通过刻蚀（干法刻蚀或者湿法刻蚀），露出像素点101的出光面122。
在一些实施例中，平坦层108材质包括无机材料或者有机材料，无机材料包括Al、Ag、SiO 2、Al 2O 3、ZrO 2、TiO 2、Si 3N 4、HfO 2中任意一种或几种的组合；有机材料包括黑矩阵光刻胶、彩色滤光光刻胶、聚酰亚胺、挡墙胶（BANK）、Overcoat胶、近紫外光负光刻胶、苯丙环丁烯中任意一种或几种的组合。
在一些实施例中，黑矩阵胶体为有机黑矩阵光刻胶。
在一些实施例中，在像素点101处淀积钝化层107。钝化层107的材质和平坦层108的材质可以相同，也可以不同。
在一些实施例中，钝化层107的材质包括无机材料或者有机材料，无机材料包括SiO 2、Al 2O 3、ZrO 2、TiO 2、Si 3N 4、HfO 2中任意一种或几种的组合；有机材料包括黑矩阵光刻胶、彩色滤光光刻胶、聚酰亚胺、挡墙胶（BANK）、Overcoat胶、近紫外光负光刻胶、苯丙环丁烯中任意一种或几种的组合。
在一些实施例中，在平坦层108上方覆盖阻挡层109，阻挡层109覆盖整个像素点阵列100的出光面122，需要透射像素点101发出的光线，从而阻挡层109应具备足够的透明度，一般地可采用二氧化硅、氮化硅、氧化铝等材质。
在一些实施例中，像素点101发出第一颜色光，在一些实施例中，像素点101发出的光为红光、绿光、蓝光、黄光或紫外光中的任意一种。
在一些实施例中，栅格层111设置于像素点阵列100上方，且栅格层111的栅格孔123相对于各像素点101设置，使像素点101发出的第一颜色光通过。
其中，栅格层111可以理解为一种具有栅格状构造的层结构，该栅格状构造具有栅栏以及由栅栏围成的格，其中格即为显示器件的栅格孔123，可以理解的是，在该栅格状构造中，栅格孔123的数量可以是一个也可以是多个，当为多个时，栅格孔123可以以规律或者不规律的方式进行排布。可以理解的是，栅格层111的栅格孔123与像素点101的出光面122对齐，即可实现像素点101发出的第一颜色光通过，可以理解的是，栅格孔123为上述的栅栏合围而成。
在一些实施例中，栅格层111设置于像素点阵列100之上，两者之间未设置中间层；在一些实施例中，当采用干法刻蚀形成栅格层111时，可以在像素点阵列100上设置上述的阻挡层109，在阻挡层109上形成栅格层111。
在一些实施例中，栅格层111中栅格孔123的数量与像素点阵列100中像素点101的数量一致，且栅格孔123一一对应的分布于各像素点101的出光面122上方，从而能够使像素点101发出的第一颜色光通过。
在一些实施例中，栅格层111可采用有机材料制成，可选的有机材料包括但不限于黑矩阵光刻胶、彩色滤光光刻胶、聚酰亚胺，挡墙胶（BANK），Overcoat胶，SU-8（近紫外负性光刻胶），BCB（Benzocyclobutene，苯并环丁烯）等。
在一些实施例中，栅格层111可采用无机材料制成，可选的无机材料的类型包括但不限于金属和金属氧化物，其中金属包括Al，Cu，Ag等，金属氧化物包括SiO 2，Al 2O 3，ZrO 2，TiO 2，Si 3N 4，HfO 2等。
在一些实施例中，栅格层111上还设置反光层112，通过反光层112在栅格孔123内反射像素点101的出光面122射出的光，可进一步提升光效。
在一些实施例中，反光层112可以采用有机材料制成，可选的有机材料包括但不限于高反有机涂料。
在一些实施例中，反光层112可以采用无机材料制成，可选的无机材料包括但不限于金属材料，例如Al，Cu，Ag等。
在一些实施例中，反光层112至少覆盖栅格孔123的侧壁且暴露像素点101，可以理解的是，栅格层111和反光层112可合并看作一种栅格结构110，在栅格结构110上，栅格孔123的侧壁被反光层112完全覆盖，栅格孔123被反光层112围绕。
在一些实施例中，由于采用的工艺不同，反光层112不仅覆盖栅格孔123的侧壁，还覆盖栅格层111的顶部表面，其中，该顶部表面为背离像素点101出光面122的表面。
在一些实施例中，为了进一步提升反射效率，可将反光层112的主要反射表面设计成如图7所示的斜面，可以理解的是，实际上反光层112是一种立体结构，此时反光层112的主要反射表面具有下小上大的立体形状。在该实施例中，沿着远离像素点101的方向，栅格孔123的横截面尺寸逐渐变大；其中，横截面为平行于出光面122的截面，一般地，该截面可以为圆形截面或者方形截面，当然该截面也可以为不规则形状截面。采用这种设置方式，除提升反光层112的反光效率之外，由于栅格孔123的斜面式侧壁的支撑作用，也能大幅提升波长转换材料的厚度积累效果，使得波长转换层113可以做的更厚，进一步提升光转换效率。
在一些实施例中，栅格层111的栅格孔123采用干法刻蚀形成，显示器件需设置阻挡层109，阻挡层109覆盖像素点阵列100并透射像素点101发出的光；栅格层111设置于阻挡层109之上，栅格孔123暴露阻挡层109。阻挡层109需要透射像素点101发出的第一颜色光线，从而阻挡层109应具备足够的透明度，一般地可采用二氧化硅、氮化硅、氧化铝等材质。
本申请实施例的显示器件中，波长转换层113形成于栅格层111上方，其至少包括多个第一波长转换单元114，第一波长转换单元114填充至少部分的栅格孔123，第一波长转换单元114可以将像素点101发出的第一颜色光转换为第二颜色光。
在一些实施例中，波长转换层113的图形化方案可以任意选择。
在一些实施例中，波长转换层113的材质为含有波长转换物质的光刻胶，波长转换层113通过曝光显影工艺获得，制备过程更简单可控。
在一些实施例中，形成波长转换层113的材料包括但不限于量子点，荧光粉等，其中，量子点可以是胶体量子点。
如图11所示，图11为图10的局部放大图，图中示出了第一波长转换单元114与栅格孔123的尺寸比较。在一些实施例中，第一波长转换单元114的高度h1大于栅格孔123的深度h2。
由于波长转换层113的第一波长转换单元114填充于栅格孔123中，栅格层111可以理解为波长转换层113的骨架，能够对波长转换层113予以支撑，从而波长转换层113可以做的更厚，能大幅提升光转换效率。同时，波长转换层113的侧表面部分地被栅格层111包裹，接触面积增大，能够增加粘附性，从而提高良率，拉大工艺窗口。此外，也是由于波长转换层113的侧表面部分地被栅格层111包裹，波长转换层113的图形能够被很好的保护，从而有效的避免了光刻显影导致的undercut（钻蚀）影响，图形可以更小，工艺窗口拉大，良率更高。再者，只需曝光波长转换层113高出栅格层111的部分，曝光时间大幅减少，不会造成过曝，波长转换层113的图形可以设计的更小，可以适用于像素点尺寸小的比如5微米尺寸以下的像素点，从而可应用于高分辨率和高像素密度的产品。
请再次参阅图11，在一些实施例中，波长转换层113的第一波长转换单元114完全覆盖对应的栅格孔123，第一波长转换单元114在栅格层111上的投影大于栅格孔123在栅格层111上的投影。可以理解的是，第一波长转换单元114上部尺寸W1大于栅格层111的格的上部尺寸W2，其中，所称的尺寸包括长、宽或直径。也就是说，波长转换层113部分地覆盖栅格层111的顶部表面，其中，顶部表面为栅格层111背离像素点阵列100的表面。
在一些实施例中，波长转换层113包括第一波长转换单元114，第一波长转换单元114至少填充于部分的栅格孔123，也就是说，可能在部分的栅格孔123内具有第一波长转换单元114，也可能在所有的栅格孔123内均具有第一波长转换单元114。
在一些实施例中，波长转换层113包括第一波长转换单元114和第二波长转换单元115，第一波长转换单元114和第二波长转换单元115填充于不同的栅格孔123；也就是说，第一波长转换单元114填充部分的栅格孔123，第二波长转换单元115可填充其余的所有栅格孔123，也可以仅填充其余的栅格孔123中部分的栅格孔123；第二波长转换单元115可以将第一颜色光转换为第三颜色光。
在一些实施例中，在未被第一波长转换单元114和第二波长转换单元115填充的栅格孔123中填充透明填充物，形成透明单元125，透明单元125的材料可以为光刻胶，包括但不限于Overcoat胶，SU8（近紫外负性光刻胶），BCB（Benzocyclobutene，苯并环丁烯）等，也可以为SiO 2，Al 2O 3，Si 3N 4等。
在一些实施例中，波长转换层113还包括第三波长转换单元116；第一波长转换单元114、第二波长转换单元115以及第三波长转换单元116填充于不同的栅格孔123；也就是说，第一波长转换单元114填充部分的栅格孔123，第二波长转换单元115填充其余的栅格孔123中部分的栅格孔123，第三波长转换单元116填充剩余的部分或者所有栅格孔123；第三波长转换单元116可以将第一颜色光转换为第四颜色光。
可以理解的是，第二波长转换单元115和第三波长转换单元116相对于栅格孔123的形状构造尺寸，均与第一波长转换单元114类似，因结构而产生的有益效果也与第一波长转换单元114的效果相同，在此不再重复赘述。
在一些实施例中，第一波长转换单元114的材料包括量子点或荧光粉；第二波长转换单元115的材料包括量子点或荧光粉；第三波长转换单元116的材料包括量子点或荧光粉。
在一些实施例中，第一波长转换单元114，第二波长转换单元115，第三波长转换单元116的波长比像素点101的波长更长即可。
在一些实施例中，像素点101发出的第一颜色光为红光。在一些实施例中，像素点101发出的光为绿光。在一些实施例中，像素点101发出的光为蓝光。在一些实施例中，像素点101发出的光为紫外光。
在一些实施例中，像素点101发出的第一颜色光为蓝光，第一波长转换单元114为红光波长转换层，第二波长转换单元115为绿光波长转换层。
在一些实施例中，像素点101发出的第一颜色光为紫外光，第一波长转换单元114为红光波长转换层，第二波长转换单元115为蓝光波长转换层，第三波长转换单元116为绿光波长转换层。
在一些实施例中，第一波长转换单元114、第二波长转换单元115和第三波长转换单元116与RGB（red，green，blue）任意对应。
在一些实施例中，第一波长转换单元114为红色，第二波长转换单元115为绿色，第三波长转换单元116为蓝色。
在一些实施例中，还设置挡光层117，挡光层117形成于栅格层111的上方，挡光层117填充波长转换层113的间隙，也就是说，挡光层117覆盖波长转换层113的高出于栅格层111的侧表面，能够有效避免像素点101之间的串扰。
在一些实施例中，还设置滤光层118，滤光层118覆盖波长转换层113。
在一些实施例中，形成滤光层118的材料包括但不限于有机滤色器光刻胶、布拉格分布式反射器等。
在一些实施例中，滤光层118的图形化方案可以任意选择，例如刻蚀、转移。
在一些实施例中，滤光层118包括多个第一滤光单元119，一个第一滤光单元119对应一个第一波长转换单元114设置，第一滤光单元119只允许第二颜色光通过。
在一些实施例中，滤光层118还包括多个第二滤光单元120，一个第二滤光单元120对应一个第二波长转换单元115设置，第二滤光单元120只允许第三颜色光通过。
在一些实施例中，滤光层118还包括多个第三滤光单元121，一个第三滤光单元121对应一个第三波长转换单元116设置，第三滤光单元121只允许第四颜色光通过。
可以理解的是，在一些实施例中，第一滤光单元119、第二滤光单元120和第三滤光单元121可以分别为红色滤光单元，绿色滤光单元和蓝色滤光单元。
本申请的实施例还描述了显示器件的制备方法，该制备方法包括：提供显示装置，该显示装置包括阵列排布的多个像素点101；
在像素点101上方形成栅格层111，栅格层111包括阵列排布的多个栅格孔123，栅格孔123相对于像素点101设置且使像素点101发出第一颜色光通过；
在栅格层111上方形成波长转换层113，波长转换层113至少包括多个第一波长转换单元114，第一波长转换单元114填充至少部分栅格孔123，第一波长转换单元114可以将第一颜色光转换为第二颜色光。
如图2所示，在一些实施例中，先提供显示装置，可以理解的是，提供显示装置可能包含了制备像素点101、驱动面板102、第一掺杂型半导体层、第一触点104、第二掺杂型半导体层、第二触点106、钝化层107、平坦层108中部分或者全部部件的过程，对于上述各部件的制备可在现有方法中做出选择。其中，Micro-LED的连接结构可以采用共阳极或者共阴极或者各自独立的结构，本领域技术人员可根据需要做出选择。可以理解的是，提供显示装置也可能是直接通过采购的方式获得显示装置，该显示装置具有包含像素点101在内的部分或者全部上述部件，或者还包含其他本领域已知的部件。
在一些实施例中，提供显示装置包括：
提供驱动面板102，在驱动面板102上形成LED外延层，LED外延层包括第一掺杂型半导体层、第二掺杂型半导体层以及位于两者之间的有源层；
在LED外延层上形成像素点101，像素点101为微型发光二极管，形成微型发光二极管的步骤包括：
当第一掺杂型半导体层包括连续的功能层结构：对第二掺杂型半导体层进行刻蚀形成台面结构，或者对第二掺杂型半导体层进行离子注入，形成阵列排布微型发光二极管；
或者，当第二掺杂型半导体层包括连续的功能层结构：对第一掺杂型半导体层进行刻蚀形成台面结构，或者对第一掺杂型半导体层进行离子注入，形成阵列排布微型发光二极管；
或者，每个像素点101中，第一掺杂型半导体层、第二掺杂型半导体层和有源层之间互相电隔离。
在一些实施例中，在形成栅格层111前，在像素点101上进行平坦化处理形成平坦层108。
如图3所示，在一些实施例中，当采用干法刻蚀形成栅格层111的栅格孔123时，还应先在像素点101上形成阻挡层109，然后在阻挡层109上形成栅格层涂层111a，通过干法刻蚀出栅格孔123，形成栅格层111，可以理解的是阻挡层109用于在干法刻蚀过程中对像素点101进行保护。
阻挡层109需要透射像素点101发出的光线，从而阻挡层109应具备足够的透明度，在一些实施例中，可采用二氧化硅、氮化硅、氧化铝等材质，可采用旋涂等方式形成于像素点阵列100上。
一并结合图4和图5所示，在一些实施例中，形成栅格层111的过程包括：先在像素点101上方形成栅格层涂层111a，通过刻蚀栅格层涂层111a形成栅格孔123，栅格孔123一一对应的设置于像素点101之上，与像素点101的出光面122对齐，使像素点101发出第一颜色光通过。
在一些实施例中，栅格层涂层111a可采用有机材料制成，可选的有机材料包括但不限于黑矩阵光刻胶、彩色滤光光刻胶、聚酰亚胺，挡墙胶（BANK），Overcoat胶，SU-8（近紫外负性光刻胶），BCB（Benzocyclobutene，苯并环丁烯）等。
在一些实施例中，栅格层111的图形化方案选用光刻或者干法刻蚀。
在一些实施例中，栅格层涂层111a可采用无机材料制成，可选的无机材料的类型包括但不限于金属和金属氧化物，其中金属包括Al，Cu，Ag等，金属氧化物包括SiO 2，Al 2O 3，ZrO 2，TiO 2，Si 3N 4，HfO 2等。
在一些实施例中，栅格层111的图形化方案选用图形化掩膜再做干法刻蚀。
在一些实施例中，栅格层111可通过掩模版转印形成，具体的，在转印过程中可设置前体层，将前体层处理成栅格层111的形状的前体，前体层可以使用各种不同技术来整形。采用干式等离子体蚀刻施加到前体层，将形状转印到下方的层上。
在一些实施例中，本领域技术人员可根据需要选择已知的方法在像素点阵列100上形成栅格层111并使栅格孔123与像素点101一一对应，暴露出像素点101的出光面122。
请一并结合图6、图7和图8所示，在一些实施例中，还包括：在栅格层111上形成反光层112，反光层112至少覆盖栅格孔123的侧壁且暴露像素点101，通过反光层112对第一颜色光的反射，可进一步提升光效。
如图6所示，在一些实施例中，在栅格层111上形成反光层112，包括：先通过沉积形成反光材料层112a，再通过干法刻蚀暴露出像素点101的出光面122，反光层112仅覆盖栅格孔123的侧壁。
在一些实施例中，反光材料层112a可以采用有机材料制成，可选的有机材料包括但不限于高反有机涂料。
在一些实施例中，反光材料层112a可以采用无机材料制成，可选的无机材料包括但不限于金属材料，例如Al，Cu，Ag等，反光层112可以通过ALD（Atomic layer deposition，原子层沉积），CVD（Chemical Vapor Deposition，化学气相沉积），蒸发，溅射等方式沉积到栅格层111表面。
在一些实施例中，采用干法刻蚀形成反光层112，其中所称的干法刻蚀包括但不限于IBE(Ion Beam Etch，离子束刻蚀)，ICP（Inductively coupled plasma，电感耦合等离子体）刻蚀。
采用上述的干法刻蚀方式，可以在反光层112沉积后整面刻蚀，使得栅格孔123底部被刻蚀干净露出阻挡层109，同时刻蚀过程中反光层112会有re-deposition（等离子体再沉积）效应，导致侧壁反光层112加厚，增强反光效果，强化栅格层111以及整体结构的稳定性（如图7所示）。如此能使制备工艺更加简化，不需要额外的光刻步骤来制作刻蚀掩膜。此外，如图8所示，当采用不同的形成方式时，反光层112还可以覆盖栅格层111的顶部表面。
在一些实施例中，为了进一步提升反射效率，可在形成栅格层111时，将反光层112的主要反射表面形成如图7和图8中所示的斜面，可以理解的是，实际上，该斜面为栅格孔123的侧壁，为立体的表面。在该实施例中，沿着远离像素点101的方向，栅格孔123的横截面尺寸逐渐变大；其中，横截面为平行于出光面122的截面。一般地，该截面可以为圆形截面或者方形截面，当然该截面也可以为不规则形状截面。采用这种设置方式，除提升反光层112的反光效率之外，由于栅格孔123的斜面式侧壁的支撑作用，也能大幅提升波长转换材料的厚度积累效果，使得波长转换层113可以做的更厚，进一步提升光转换效率。
可以理解的是，在一些实施例中，可以通过在形成栅格层111的过程中，使栅格孔123形成下小上大的立体结构，内表面形成斜面，从而在覆盖反光层112后，反光层112也延续了下小上大的特性，反光层112也为斜面。在一些实施例中，仅在形成反光层112时，使其形成斜面。
请一并结合图9-图16，形成波长转换层113，使波长转换层113填充栅格孔123。具体的，波长转换层113形成于栅格层111上方，其至少包括多个第一波长转换单元114，第一波长转换单元114填充至少部分的栅格孔123，第一波长转换单元114可以将像素点101发出的第一颜色光转换为第二颜色光。
在一些实施例中，波长转换层113的图形化方案可以任意选择。
在一些实施例中，波长转换层113的材质为含有波长转换物质的光刻胶，波长转换层113通过曝光显影工艺获得，制备过程更简单可控。
在一些实施例中，波长转换层的材料包括但不限于量子点，荧光粉等。其中量子点可以是胶体量子点。
请再次参阅图11，图11为图10的局部放大图，图中示出了第一波长转换单元114与栅格孔123的尺寸比较。在一些实施例中，第一波长转换单元114的高度h1大于栅格孔123的深度h2。
由于波长转换层113的第一波长转换单元114填充于栅格孔123中，栅格层111可以理解为波长转换层113的骨架，能够对波长转换层113予以支撑，从而波长转换层113可以做的更厚，侧壁的反光层112可以提升出光效率，从而大幅提升光转换效率。同时，波长转换层113的侧表面部分地被栅格层111包裹，接触面积增大，能够增加粘附性，从而提高良率，拉大工艺窗口。此外，也是由于波长转换层113的侧表面部分地被栅格层111包裹，波长转换层113图形能够被很好的保护，从而有效的避免了光刻显影导致的undercut（钻蚀）影响，图形可以更小，工艺窗口拉大，良率更高。再者，只需曝光波长转换层113中高出栅格层111的部分，曝光时间大幅减少，不会造成过曝，波长转换层113的图形可以更小，从而可应用于高分辨率和高像素密度的产品。
请再次参阅图11，在一些实施例中，波长转换层113的第一波长转换单元114完全覆盖对应的栅格孔123，第一波长转换单元114在栅格层111上的投影大于栅格孔123在栅格层111上的投影。可以理解的是，第一波长转换单元114上部尺寸W1大于栅格层111的格的上部尺寸W2，其中，所称的尺寸包括长、宽或直径。也就是说，波长转换层113部分地覆盖栅格层111的顶部表面，其中，顶部表面为栅格层111背离像素点阵列100的表面。
请再次参阅图9、图10、图12、图13、图16所示，在一些实施例中，形成波长转换层113包括形成第一波长转换单元114，第一波长转换单元114至少填充部分的栅格孔123。
在一些实施例中，通过旋涂、烘干形成第一波长转换材料层114a，再通过曝光、显影在部分或者全部的栅格孔123中形成第一波长转换单元114。
在一些实施例中，形成波长转换层113包括分别形成第一波长转换单元114和第二波长转换单元115，第一波长转换单元114和第二波长转换单元115填充于不同的栅格孔123。
在一些实施例中，通过旋涂、烘干形成第一波长转换材料层114a，再通过曝光、显影在部分或者全部的栅格孔123中形成第一波长转换单元114；然后通过旋涂、烘干形成第二波长转换材料层115a，再通过曝光、显影在不同的栅格孔123中形成第二波长转换单元115。
在一些实施例中，在分别形成第一波长转换单元114和第二波长转换单元115之后，还在剩余的栅格孔123中形成透明单元125。
请一并结合图14、图15所示，在一些实施例中，形成波长转换层113还包括形成第三波长转换单元116；第一波长转换单元114、第二波长转换单元115以及第三波长转换单元116填充于不同的栅格孔123。
在一些实施例中，通过旋涂、烘干形成第一波长转换材料层114a，再通过曝光、显影在部分或者全部的栅格孔123中形成第一波长转换单元114；然后通过旋涂、烘干形成第二波长转换材料层115a，再通过曝光、显影在不同的栅格孔123中形成第二波长转换单元115；最后通过旋涂、烘干形成第三波长转换材料层116a，再通过曝光、显影在不同的栅格孔123中形成第三波长转换单元116。
对于第一波长转换材料层114a、第二波长转换材料层115a、第三波长转换材料层116a以及第一波长转换单元114、第二波长转换单元115、第三波长转换单元116在前述显示器件中已做说明，在此不再赘述，可以理解的是具体的颜色本领域技术人员可根据实际需要做出选择。
如图17所示，在一些实施例中，在形成波长转换层113之后，还可以在栅格层111上形成挡光层117，填充波长转换层113的间隙。可以理解的是，挡光层117覆盖波长转换层113的高出于栅格层111的侧表面，避免像素点101之间的串扰。
在一些实施例中，挡光层117的形成材料包括但不限于金属、有机黑矩阵光刻胶、彩色滤光光刻胶、聚酰亚胺等。
在一些实施例中，挡光层117的形成方案可以任意选择。
如图18所示，在一些实施例中，在形成波长转换层113之后，还可以在波长转换层113上覆盖滤光层118。
在一些实施例中，形成滤光层118的材料包括但不限于有机滤色器光刻胶、布拉格分布式反射器等。
在一些实施例中，滤光层118的图形化方案可以任意选择，例如刻蚀、转移。
在一些实施例中，形成滤光层118包括形成多个第一滤光单元119，一个第一滤光单元119对应一个第一波长转换单元114设置，第一滤光单元119只允许第二颜色光通过。
在一些实施例中，形成滤光层118还包括形成多个第二滤光单元120，一个第二滤光单元120对应一个第二波长转换单元115设置，第二滤光单元120只允许第三颜色光通过。
在一些实施例中，形成滤光层118还包括形成多个第三滤光单元121，一个第三滤光单元121对应一个第三波长转换单元116设置，第三滤光单元121只允许第四颜色光通过。
可以理解的是，在一些实施例中，第一滤光单元119、第二滤光单元120和第三滤光单元121可以分别为红色滤光单元，绿色滤光单元和蓝色滤光单元。
如图19、图20所示，为显示器件的俯视图。在图19中出光面122为方形，相应的，其栅格结构110的栅格层111中，栅格孔123的形状也可以为方形；在图20中出光面122为圆形，相应的，其栅格结构110的栅格层111中，栅格孔123的形状也可以为圆形。如图21所示，为图19和图20中显示单元124的像素点101（pixels）拜尔阵列（Bayer pattern）的示意图，即像素点阵列100为拜尔阵列；如图22所示，为图19和图20中显示单元124像素点101（pixels）条形阵列（Stripe pattern）的示意图，即像素点阵列100为条形阵列。
在一些实施例中，第一颜色光为紫外光，第一波长转换单元114为红色光、第二波长转换单元115绿色和第三波长转换单元116为蓝色；图21和图22中像素点101的排布方式均可以实现单片全彩Micro-LED显示。
在一些实施例中，第一颜色光为蓝色光，第一波长转换单元114为红色光、第二波长转换单元115为绿色光，透明单元125为透明填充物从而透过第一颜色光；在该实施例中，按照图21和图22中像素点101的排布方式均可以实现单片全彩Micro-LED显示。
在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。
以上对本申请实施例所提供的显示器件及其制备方法进行了详细介绍，本申请中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。

Claims (24)

  1. 显示器件的制备方法，其特征在于，包括：
    提供显示装置，所述显示装置包括阵列排布的多个像素点，所述像素点发出第一颜色光；
    在所述像素点上方形成栅格层，所述栅格层包括阵列排布的多个栅格孔，所述栅格孔相对于所述像素点设置，所述第一颜色光通过所述栅格孔；
    在所述栅格层上方形成波长转换层，所述波长转换层包括多个第一波长转换单元，所述第一波长转换单元填充至少部分所述栅格孔，所述第一波长转换单元将所述第一颜色光转换为第二颜色光。
  2. 根据权利要求1所述的显示器件的制备方法，其特征在于，形成所述栅格层包括：在所述像素点上方形成栅格层涂层，刻蚀所述栅格层涂层形成所述栅格孔。
  3. 根据权利要求2所述的显示器件的制备方法，其特征在于，在形成所述栅格层之后，且在形成所述波长转换层之前，包括：
    在所述栅格层上形成反光层，所述反光层至少覆盖所述栅格孔的侧壁且暴露所述像素点。
  4. 根据权利要求3所述的显示器件的制备方法，其特征在于，在形成所述栅格层之后，且在形成所述波长转换层之前，还包括：
    在所述栅格层上形成反光材料层；
    通过干法刻蚀所述反光材料层形成反光层，所述反光层仅覆盖所述栅格孔的侧壁。
  5. 根据权利要求1所述的显示器件的制备方法，其特征在于，沿着远离所述像素点的方向，所述栅格孔的横截面尺寸逐渐变大。
  6. 根据权利要求1所述的显示器件的制备方法，其特征在于，包括：
    在所述像素点上方覆设阻挡层，所述栅格层位于所述阻挡层上方；其中，通过刻蚀形成所述栅格孔使所述栅格孔的底部暴露所述阻挡层，所述第一颜色光通过所述阻挡层。
  7. 根据权利要求1所述的显示器件的制备方法，其特征在于，所述第一波长转换单元的高度大于所述栅格孔的深度且所述第一波长转换单元完全覆盖对应的所述栅格孔，所述第一波长转换单元在所述栅格层上的投影大于所述栅格孔在所述栅格层上的投影。
  8. 根据权利要求7所述的显示器件的制备方法，其特征在于，形成所述波长转换层之后，在所述栅格层上方形成挡光层，所述挡光层填充所述波长转换层的间隙。
  9. 根据权利要求1所述的显示器件的制备方法，其特征在于，所述波长转换层的材质为含有波长转换物质的光刻胶，通过曝光显影形成所述波长转换层。
  10. 根据权利要求1所述的显示器件的制备方法，其特征在于，形成所述波长转换层之后，在所述波长转换层上覆盖滤光层，所述滤光层至少包括多个第一滤光单元，一个所述第一滤光单元对应一个所述第一波长转换单元设置，所述第一滤光单元只允许所述第二颜色光通过。
  11. 根据权利要求1所述的显示器件的制备方法，其特征在于，提供显示装置包括：
    提供驱动面板，在所述驱动面板上形成LED外延层，所述LED外延层包括第一掺杂型半导体层、第二掺杂型半导体层以及位于两者之间的有源层；
    在所述LED外延层上形成所述像素点，所述像素点为微型发光二极管，形成所述微型发光二极管的步骤包括：
    当第一掺杂型半导体层包括连续的功能层结构：对第二掺杂型半导体层进行刻蚀形成台面结构，或者对第二掺杂型半导体层进行离子注入，形成阵列排布微型发光二极管；
    或者，当第二掺杂型半导体层包括连续的功能层结构：对第一掺杂型半导体层进行刻蚀形成台面结构，或者对第一掺杂型半导体层进行离子注入，形成阵列排布微型发光二极管；
    或者，每个像素点中，第一掺杂型半导体层、第二掺杂型半导体层和有源层之间互相隔离。
  12. 根据权利要求1所述的显示器件的制备方法，其特征在于，形成所述波长转换层还包括形成第二波长转换单元，所述第二波长转换单元将所述第一颜色光转换为第三颜色光，所述第一波长转换单元和所述第二波长转换单元填充于不同的所述栅格孔。
  13. 根据权利要求12所述的显示器件的制备方法，其特征在于，形成所述波长转换层还包括形成第三波长转换单元，所述第三波长转换单元将所述第一颜色光转换为第四颜色光，所述第一波长转换单元、所述第二波长转换单元和所述第三波长转换单元填充于不同的所述栅格孔。
  14. 根据权利要求12所述的显示器件的制备方法，其特征在于，包括形成透明单元，所述透明单元透过所述第一颜色光，所述第一波长转换单元、所述第二波长转换单元和所述透明单元填充于不同的所述栅格孔。
  15. 显示器件，其特征在于，包括：
    显示装置，所述显示装置包括阵列排布的多个像素点，所述像素点发出第一颜色光；
    栅格层，所述栅格层包括阵列排布的多个栅格孔，所述栅格孔相对于所述像素点设置，所述第一颜色光通过所述栅格孔；
    波长转换层，所述波长转换层包括多个第一波长转换单元，所述第一波长转换单元填充至少部分所述栅格孔，所述第一波长转换单元将所述第一颜色光转换为第二颜色光。
  16. 根据权利要求15所述的显示器件，其特征在于，还包括：
    反光层，所述反光层至少覆盖所述栅格孔的侧壁且暴露所述像素点。
  17. 根据权利要求15所述的显示器件，其特征在于，沿着远离所述像素点的方向，所述栅格孔的横截面尺寸逐渐变大。
  18. 根据权利要求15所述的显示器件，其特征在于，包括：
    阻挡层，所述阻挡层覆设于所述像素点上方，所述第一颜色光通过所述阻挡层；所述栅格层位于所述阻挡层上方，所述栅格孔的底部暴露所述阻挡层。
  19. 根据权利要求15所述的显示器件，其特征在于，所述第一波长转换单元的高度大于所述栅格孔的深度且所述第一波长转换单元完全覆盖对应的所述栅格孔，所述第一波长转换单元在所述栅格层上的投影大于所述栅格孔在所述栅格层上的投影。
  20. 根据权利要求19所述的显示器件，其特征在于，包括：
    挡光层，所述挡光层填充所述波长转换层的间隙。
  21. 根据权利要求15所述的显示器件，其特征在于，包括：
    滤光层，所述滤光层至少包括多个第一滤光单元，一个所述第一滤光单元对应一个所述第一波长转换单元设置，所述第一滤光单元只允许所述第二颜色光通过。
  22. 根据权利要求15所述的显示器件，其特征在于，所述波长转换层还包括第二波长转换单元，所述第二波长转换单元将所述第一颜色光转换为第三颜色光，所述第一波长转换单元和所述第二波长转换单元填充于不同的所述栅格孔。
  23. 根据权利要求22所述的显示器件，其特征在于，所述波长转换层还包括第三波长转换单元；所述第三波长转换单元将所述第一颜色光转换为第四颜色光，所述第一波长转换单元、所述第二波长转换单元和所述第三波长转换单元填充于不同的所述栅格孔。
  24. 根据权利要求22所述的显示器件，其特征在于，包括透明单元，所述透明单元透过所述第一颜色光，所述第一波长转换单元、所述第二波长转换单元和所述透明单元填充于不同的所述栅格孔。
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