WO2023204527A1 - Light emitting element and manufacturing method thereof - Google Patents
Light emitting element and manufacturing method thereof Download PDFInfo
- Publication number
- WO2023204527A1 WO2023204527A1 PCT/KR2023/005046 KR2023005046W WO2023204527A1 WO 2023204527 A1 WO2023204527 A1 WO 2023204527A1 KR 2023005046 W KR2023005046 W KR 2023005046W WO 2023204527 A1 WO2023204527 A1 WO 2023204527A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor layer
- pillars
- light emitting
- emitting device
- holes
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 81
- 239000004038 photonic crystal Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000002061 nanopillar Substances 0.000 claims description 26
- 239000000945 filler Substances 0.000 claims description 18
- 239000004642 Polyimide Substances 0.000 claims description 7
- 229910010272 inorganic material Inorganic materials 0.000 claims description 7
- 239000011147 inorganic material Substances 0.000 claims description 7
- 229920001721 polyimide Polymers 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 239000011368 organic material Substances 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 239000004593 Epoxy Substances 0.000 claims description 4
- 229920001486 SU-8 photoresist Polymers 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000003190 augmentative effect Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 229910004140 HfO Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Definitions
- the present invention relates to a light-emitting device, and particularly to a light-emitting device having a photonic crystal structure and a method of manufacturing the same.
- VR and Augmented Reality (AR) devices can be equipped with glasses, goggles, helmets, visors or other devices. It can be integrated into a head-mounted display (HMD) device in the form of glasses.
- the HMD device displays virtual reality images (eg, from at least one virtual environment input) and/or mixed reality (MR) images or augmented reality (AR) images.
- VR and AR Augmented Reality
- the light sources of these AR and VR microdisplays are made of lasers, OLEDs, etc.
- lasers are an excellent light source with straight-line brightness and fast response speed, but due to the characteristics of lasers, they consume a lot of power and generate a lot of heat, and there are eye safety issues.
- OLED consumes a lot of power, does not produce sufficient brightness, and has limitations in realizing high resolution.
- US Patent No. 10,866,422 proposes a micro LED display system.
- the micro LED display system includes a plurality of monochrome projectors (e.g., three micro LED projectors) to generate three monochrome images (e.g., red, blue, and green images).
- micro LEDs or nano LEDs are capable of high resolution, low power, and theoretically high brightness, but when manufacturing nano LEDs, external efficiency is low due to side effects during the manufacturing process, and laser ( It has the disadvantage of being less straight than laser.
- Micro LED or ME LED Because it is possible to achieve high response speed, high brightness, low power consumption, and high resolution, there is a need for a method to improve the optical straightness of micro LED or nano LED and increase external efficiency.
- the present invention was made to solve the above problems, and its purpose is to provide a light-emitting device having a photonic crystal structure to improve light propagation and external quantum efficiency, and a method for manufacturing the same.
- a light emitting device includes a substrate; and a plurality of main pillars, each of the plurality of main pillars comprising: a first semiconductor layer formed on the substrate; a second semiconductor layer formed on the first semiconductor; and an active layer disposed between the first semiconductor layer and the second semiconductor layer, wherein the second semiconductor layer includes a photonic crystal structure formed on the second semiconductor layer, and the photonic crystal structure includes a plurality of holes. , the plurality of holes are filled with air.
- the photonic crystal structure may include a plurality of nano pillars installed on the plurality of holes.
- the plurality of nano-pillars may be formed of p-GaN or SiO 2 oxide.
- the plurality of nano-fillers may have a refractive index of 1.4 to 2.5.
- the plurality of nano-fillers may include either indium tin oxide (ITO) or zinc oxide (ZnO).
- ITO indium tin oxide
- ZnO zinc oxide
- the plurality of nano-fillers are formed of any one of a patternable insulating organic material and an oxidized inorganic material, and the insulating organic material and an oxidized inorganic material may include photo resist, polyimide (PI), Su-8, and epoxy. there is.
- the main pillar may have any one of a cylindrical shape, a square pillar, or a hexagonal pillar.
- a method of manufacturing a light emitting device includes sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a semiconductor substrate; Processing the second semiconductor layer to form a plurality of main pillars; and forming a photonic crystal structure including a plurality of holes on the main pillar.
- a method of manufacturing a light emitting device includes sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a semiconductor substrate; Processing the second semiconductor layer to form a plurality of main pillars; forming a filler layer by forming an insulating oxide film or a nitride film on side surfaces of the plurality of main pillars; and forming a photonic crystal structure including a plurality of holes in the filler layer.
- the light emitting device manufacturing method may further include installing a plurality of nano pillars in the plurality of holes.
- the external QE light efficiency can be improved by eliminating the TM mode lost in the side direction and changing it to the TE mode in the vertical direction, and emitting light in the vertical direction. It is suitable as a display light source, and can produce light-emitting elements especially suitable for producing high-resolution displays for VR, AR, and MR.
- FIG. 1 is a diagram showing a light-emitting device having a photonic crystal structure of the present invention.
- FIG. 1(a) is a perspective view of a light-emitting device according to a first embodiment of the present invention
- FIG. 1(b) is a diagram showing a light-emitting device according to a first embodiment of the present invention.
- a perspective view of a light emitting device according to an embodiment is shown.
- Figure 2 is a diagram for explaining the structure of the main pillar according to the first embodiment of the present invention.
- Figure 3 is a diagram for explaining the structure of the main pillar according to the second embodiment of the present invention.
- FIG. 4 is a cross-sectional view of the light emitting devices of FIG. 1.
- Figure 5 shows a number of displays according to the present invention.
- FIG 6 shows examples of light patterns according to embodiments of the present invention.
- Figure 1 is a diagram showing light-emitting devices according to embodiments of the present invention.
- Figure 1(a) is a diagram showing a light-emitting device according to a first embodiment of the present invention
- Figure 1(b) is a diagram showing a light-emitting device according to a first embodiment of the present invention.
- This is a diagram showing a light emitting device according to the second embodiment.
- the light emitting device includes a substrate 200, a plurality of main pillars 100 disposed on the substrate 200, and the plurality of main pillars ( It includes an insulating layer 300 located on the side and top of 100).
- the plurality of main pillars 100 may be arranged in a first photonic crystal pattern on the substrate 200.
- the first photonic crystal pattern in which the plurality of main pillars 100 are disposed on the substrate 200 may be determined according to the optical characteristics of the light emitting device.
- the spacing and size between the plurality of main pillars 100 may be determined according to the emission color of the light emitting device.
- the plurality of main pillars 100 are disclosed as having a cylindrical shape. However, the present invention is not limited to this, and the plurality of main pillars 100 may have other shapes, such as hexagonal pillars or square pillars.
- each of the plurality of main pillars 100 may range from 1 ⁇ m (micrometer) to 200 ⁇ m. Preferably, the size of each of the plurality of main pillars 100 may be within the range of 1 ⁇ m (micrometer) to 100 ⁇ m.
- each of the plurality of main pillars 100 has a cylindrical shape
- the diameter of the cylindrical shape may be less than 5 ⁇ m (micrometer).
- the length of one side of the square may be 5 ⁇ m or less.
- the length of the line passing through the center of the hexagon may be 5 ⁇ m or less.
- each of the plurality of main pillars 100 has a photonic crystal structure. Specifically, each of the plurality of main pillars 100 includes a plurality of holes 132 formed on its upper portion. The plurality of holes 132 may be arranged in a second photonic crystal pattern. Additionally, the plurality of holes 132 may be filled with air. The plurality of holes 132 preferably have a circular shape.
- Each of the plurality of holes 132 may have a size of 1 ⁇ m (micrometer) or less.
- each of the plurality of holes 132 may have a diameter of ⁇ m or less.
- the light emitting device according to the second embodiment has a similar configuration to the light emitting device according to the first embodiment except for the photonic crystal structure formed in the plurality of main pillars 100, so the detailed description thereof is provided. omit.
- Each of the plurality of main pillars 100 of the light emitting device according to the second embodiment includes a plurality of holes 132, and includes a plurality of nano pillars 150 formed on the plurality of holes 132. .
- the plurality of nano-pillars 150 may be formed of p-GaN or SiO 2 oxide.
- the plurality of nano-pillars 150 may have a refractive index of 1.5.
- the plurality of nano-fillers 150 may be formed of either indium tin oxide (ITO) or zinc oxide (ZnO).
- the insulating layer 300 may be formed to surround the side wall of one of the plurality of nano-pillars 150 with an insulating film or to fill the space between the nano-pillars 150 with an insulating material. In this case, the insulating layer 300 may insulate the nano-pillars 150.
- Light-emitting devices having the above configuration have high brightness, laser-like radiation, high resolution, low power consumption, and high response speed.
- the main pillars of the light-emitting devices can form a sub-pixel.
- the light emitting device according to the present invention may have a structure in which pixels composed of the main pillars described above are arranged in a matrix form.
- FIG. 2 is a diagram for explaining the structure of the main pillar according to the first embodiment of the present invention.
- the main pillar 100 having a photonic crystal structure may be formed on the substrate 200.
- the main pillar 100 includes a first semiconductor layer 110, a second semiconductor layer 130, an active layer 120 disposed between the first semiconductor layer 110 and the second semiconductor layer 130, and the second semiconductor layer 130. 2
- It includes a photonic crystal structure formed in the semiconductor layer 130.
- a photonic crystal is a material that forms a crystal lattice by regularly arranging particles with different refractive indices from the matrix. It refers to a material that has an optical band gap due to periodic changes in dielectric constant at half the wavelength of light.
- the optical bandgap controls photons in a photonic crystal in the same way that the bandgap of electrons controls electrons in a semiconductor.
- the wavelength corresponding to the optical bandgap is Only light cannot propagate inside the material and is selectively reflected.
- selective reflection due to the optical bandgap appears as a reflected color.
- the reflected color of a photonic crystal is determined by the refractive index of the matrix material and the colloidal particles dispersed therein, the crystal structure, the size of the colloidal particles, and the spacing between colloidal particles. Therefore, by controlling this, photonic crystals with desired reflection colors can be manufactured.
- the substrate 200 is made of sapphire.
- the substrate 200 may be made of gallium nitride (GaN), or a transparent conductive substrate such as silicon carbide (SiC) or zinc oxide (ZnO).
- the first semiconductor layer 110 is formed as an n-type semiconductor layer
- the second semiconductor layer 130 is formed as a p-type semiconductor layer, but the reverse case is also possible, of course. .
- the n-type semiconductor layer 110 may include n-GaN or un-GaN. Specifically, the n-type semiconductor layer 110 may be formed of a GaN layer or a GaN/AlGaN layer doped with an n-type conductivity impurity (Si).
- the p-type semiconductor layer may include p-GaN.
- the p-type semiconductor layer 130 may be formed of a GaN layer doped with a p-type conductivity impurity, or a thin AlGaN layer may be formed on a GaN layer doped with a p-type conductivity impurity. there is.
- the active layer 120 has a multi quantum well (MQW) structure in which a plurality of well layers 121 and a plurality of barrier layers 122 are alternately arranged.
- MQW multi quantum well
- Main pillars of 5 micrometers or less are formed in the second semiconductor layer 130.
- the main pillars can function as micro LED subpixels.
- a photonic crystal structure is formed on each main pillar.
- the photonic crystal structure may include a plurality of holes 132 formed on the second semiconductor layer 130.
- the plurality of holes 132 are filled with air.
- the second semiconductor layer 130 may be formed of the compound GaN.
- the second semiconductor layer 130 has a refractive index of approximately 2.5, and the air filled in the plurality of holes 130 has a refractive index of approximately 1.
- the holes 132 in the embodiments of FIGS. 1 and 2 are disclosed as having a circular shape, the holes 132 may have other shapes such as hexagons or squares.
- the diameter of the holes 132 or the spacing between the holes 132 may be determined according to the optical characteristics of the light emitted by the main pillar 100.
- the main pillar 100 has a structure in which the refractive indices of 1 and 2.5 in the second semiconductor layer 130 are arranged (placed) in a predetermined photonic crystal pattern.
- the photonic crystal structure in which the refractive indices of 1 and 2.5 are arranged in a predetermined photonic crystal pattern in the second semiconductor layer 130 has a photonic energy band gap. Accordingly, the part corresponding to the photonic energy band gap of the light emitted from the active layer 120 is hidden and the remaining part is better radiated.
- the size and spacing of the holes 132 formed in the second semiconductor layer 130 may be determined through simulation according to the desired optical characteristics of light. Accordingly, a light emitting device having a photonic crystal structure can increase external QE by eliminating the TM mode lost in the side direction and changing it to the TE mode in the vertical direction.
- Figure 3 is a diagram for explaining the structure of the main pillar according to the second embodiment of the present invention.
- the main pillar 100 having a photonic crystal structure has a similar structure to the main pillar of FIG. 2, and the similar structure will be briefly described.
- the main pillar 100 includes a first semiconductor layer 110, a second semiconductor layer 130, an active layer 120 disposed between the first semiconductor layer 110 and the second semiconductor layer 130, and the second semiconductor layer 130. It may include a photonic crystal structure formed in the two-bit semiconductor layer 130.
- the photonic crystal structure is formed in the second semiconductor layer 130.
- the photonic crystal structure may include a plurality of holes 132.
- the photonic crystal structure may include a plurality of nano pillars 150 installed in the plurality of holes 132.
- the plurality of nano-fillers may be formed of either an insulating organic material or an oxidized inorganic material capable of being patterned.
- the insulating organic material and oxidized inorganic material may include photo resist, polyimide (PI), Su-8, and epoxy.
- the plurality of nano-pillars 150 may be formed of p-GaN or SiO 2 oxide.
- the plurality of nano-pillars 150 may have a refractive index of 2.5.
- the plurality of nano-pillars 150 are formed of SiO 2 , they may have a refractive index of 1.5.
- the plurality of nano-fillers 150 may be formed of either indium tin oxide (ITO) or zinc oxide (ZnO).
- ITO indium tin oxide
- ZnO zinc oxide
- they may have a refractive index of 2.2.
- the plurality of nano-pillars 150 may have a refractive index of 1.4 to 2.5. Preferably, the plurality of nano-pillars 150 may have a refractive index of 1.5.
- the main pillar 100 since the second semiconductor layer 130 has a refractive index of approximately 2.5, the main pillar 100 has a refractive index of 1 in the second semiconductor layer 130 and a refractive index determined between 1.4 and 2.5 in a predetermined photonic crystal pattern. It has an arranged (arranged) structure.
- the photonic crystal structure in which the refractive index of the second semiconductor layer 130 is determined between 1.4 and 2.5 and the refractive index of 2.5 is arranged in a photonic crystal pattern has a photonic energy band gap. Accordingly, the part corresponding to the photonic energy band gap of the light emitted from the active layer 120 is hidden and the remaining part is better radiated.
- the size and spacing of the holes 132 formed in the second semiconductor layer 130 or the length of the nano pillars 150 may be determined through simulation according to the desired optical characteristics of light.
- a light emitting device having a photonic crystal structure can increase external QE by eliminating the TM mode lost in the side direction and changing it to the TE mode in the vertical direction.
- FIG. 4 is a cross-sectional view of the light emitting devices of FIG. 1.
- FIG. 4(a) shows a cross section of a main pillar including a plurality of holes
- FIG. 4(b) shows a cross section of a main element including a plurality of nano pillars.
- Figure 5 shows a number of light-emitting devices according to the invention.
- the color of the light emitted by the light emitting devices 100 is changed by changing the depth or length of the holes 132 of the main pillar 100 or by changing the thickness and length of the nano pillars installed in the holes 132. It can also change.
- the light emitting elements emit red, blue, and green respectively.
- the above light-emitting device is a reflective display that displays an image by reflecting external light, does not require a light source such as a backlight, and has the effect of displaying an image at low power, especially outdoors or under bright lighting.
- the color of the light emitting device itself changes to display an image, a separate color filter is not required, and all pixels can be used to create a single screen.
- a conventional display device composed of R/G/B subpixels
- the other two subpixels must display a black image, which lowers the actual resolution. A problem occurred.
- the display according to the present invention uses all pixels no matter what color it displays, so it has the effect of increasing actual resolution.
- the above display displays an image by reflecting external light, does not require a light source such as a backlight, and has the effect of displaying an image with low power, especially outdoors or under bright lighting.
- the first semiconductor layer 110, the active layer 120, and the second semiconductor layer 130 are sequentially formed on the substrate 200.
- the second semiconductor layer 130 may be formed of a GaN compound.
- the second semiconductor layer 130 is processed to form a main pillar 100 having a size of 5 micrometers or less.
- the diameter of the circle in the cross section may be 5 ⁇ m or less, and if the main pillar 100 is a square pillar, the length of one side of the square in the cross section may be 5 ⁇ m or less.
- a photonic crystal structure is formed on the top of the main pillar 100. Specifically, a plurality of holes 132 are formed in the upper part of the main pillar 100. The plurality of holes 132 may be arranged in a predetermined light pattern.
- a filler layer is formed by growing an insulating oxide/nitride film such as SiO2, Al2O3, SiN, HfO, WO, etc. on the main pillar 100, and the filler layer is formed. Holes 132 may be formed in . In this case, the physical properties of the filler layer and the physical properties of the second semiconductor layer 130 may be different.
- the plurality of holes 132 are preferably circular.
- the diameter of the plurality of holes 132 may be 1 ⁇ m or less.
- the number of holes may be 1 to 10.
- a nanopattern with a photonic crystal structure is created on the second semiconductor layer 130.
- the depth or width of the hole 132 or nano-pillar 150 in the photonic crystal structure may be determined depending on the color of the displays.
- an insulating layer 300 may be formed on the main pillar 100.
- the main filler may be surrounded or filled with insulating organic and oxidized inorganic materials capable of patterning, such as photo resist, PI, Su-8, and epoxy.
- Figure 6 shows examples of light patterns according to embodiments of the present invention. As shown in FIG. 6, different patterns may exist depending on the optical characteristics of the light emitting device. Afterwards, a plurality of nano pillars may be installed in the plurality of holes 132.
- light efficiency can be improved by forming a photonic crystal structure in the semiconductor layer.
- a light emitting device with a photonic crystal structure can increase external QE by eliminating the TM mode lost in the side direction and changing it to the TE mode in the vertical direction.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
A light emitting element according to an embodiment of the present invention comprises a substrate and a plurality of main pillars, each of the plurality of main pillars comprising: a first semiconductor layer formed on the substrate; a second semiconductor layer formed on the first semiconductor layer; and an active layer disposed between the first semiconductor layer and the second semiconductor layer, wherein the second semiconductor layer includes a photonic crystal structure formed on the second semiconductor layer, the photonic crystal structure includes a plurality of holes, and the plurality of holes are arranged in a single photonic crystal pattern and filled with air.
Description
본 발명은 발광 소자에 관한 것으로, 특히 광 결정 구조를 갖는 발광 소자 및 그 제조 방법에 관한 것이다.The present invention relates to a light-emitting device, and particularly to a light-emitting device having a photonic crystal structure and a method of manufacturing the same.
최근 가상 현실(Virtual Reality: VR) 및 증강 현실(Augmented Reality: AR) 장치에 대한 수요가 증가하고 있는데, 이러한 가상 현실(VR) 및 증강 현실(AR) 장치는 안경, 고글, 헬멧, 바이저 또는 기타 안경의 형태로 HMD(head-mounted display) 장치에 통합될 수 있다. HMD 디바이스는 (예를 들어, 적어도 하나의 가상 환경 입력으로부터) 가상 현실 이미지, 및/또는 혼합 현실(MR) 이미지 또는 증강 현실(AR) 이미지를 표시한다.Recently, the demand for Virtual Reality (VR) and Augmented Reality (AR) devices has been increasing. These VR and Augmented Reality (AR) devices can be equipped with glasses, goggles, helmets, visors or other devices. It can be integrated into a head-mounted display (HMD) device in the form of glasses. The HMD device displays virtual reality images (eg, from at least one virtual environment input) and/or mixed reality (MR) images or augmented reality (AR) images.
이러한 AR 및 VR용 마이크로 디스플레이의 광원은 레이저(laser), OLED 등으로 제작된다. The light sources of these AR and VR microdisplays are made of lasers, OLEDs, etc.
그러나, 레이저는 직진성 밝은휘도, 빠른 응답속도로 우수한 광원이지만 레이저의 특성상 전력소모 및 열발생이 많고 눈 안전(eye safty) 이슈가 있다. 또한, OLED는 전력소모가 많으며, 충분한 휘도가 나오지 않으며, 높은 해상도 구현에 한계가 있다. However, lasers are an excellent light source with straight-line brightness and fast response speed, but due to the characteristics of lasers, they consume a lot of power and generate a lot of heat, and there are eye safety issues. In addition, OLED consumes a lot of power, does not produce sufficient brightness, and has limitations in realizing high resolution.
그에 따라, 레이저 또는 OLED를 대체할 마이크로 LED 또는 나노 LED에 대한 관심이 증가하고 있다. 예컨대, 미국 특허 제10,866,422호는 마이크로 LED 디스플레이 시스템을 제안하고 있다. 상기 마이크로 LED 디스플레이 시스템은 3개의 모노크롬(monochrome) 이미지(예: 빨강, 파랑 및 녹색 이미지)를 생성하기 위해 복수의 모노크롬 프로젝터(예: 3개의 마이크로 LED 프로젝터)를 포함한다. Accordingly, interest in micro LED or nano LED to replace laser or OLED is increasing. For example, US Patent No. 10,866,422 proposes a micro LED display system. The micro LED display system includes a plurality of monochrome projectors (e.g., three micro LED projectors) to generate three monochrome images (e.g., red, blue, and green images).
이러한 마이크로 LED 또는 나노 LED는 높은 해상도, 저전력, 이론적으로는 높은 휘도가 가능하나, 나노 LED 제작시, 제조 공정 도중의 사이드 이펙트(side effect)로 인하여 외부 효율(External Efficiency)이 낮으며, 레이저(laser)에 비해 직진성이 낮다는 단점이 있다. These micro LEDs or nano LEDs are capable of high resolution, low power, and theoretically high brightness, but when manufacturing nano LEDs, external efficiency is low due to side effects during the manufacturing process, and laser ( It has the disadvantage of being less straight than laser.
이러한 단점에도 불구하고, 마이크로 LED 또는 나도 LED는. 높은 응답속도, 높은휘도, 저전력소모, 높은 해상도의 구현이 가능하기 때문에, 마이크로 LED 또는 나도 LED의 광 직진성을 향상시키고, 외부 효율을 증가시키기 위한 방안이 요구되고 있다.Despite these drawbacks, Micro LED or ME LED. Because it is possible to achieve high response speed, high brightness, low power consumption, and high resolution, there is a need for a method to improve the optical straightness of micro LED or nano LED and increase external efficiency.
본 발명은 상기 문제점을 해결하기 위하여 안출된 것으로, 광 직진성 및 외부 양자 효율을 향상시키기 위한 광결정 구조를 갖는 발광 소자 및 그 제조 방법을 제공하는 것을 목적으로 한다.The present invention was made to solve the above problems, and its purpose is to provide a light-emitting device having a photonic crystal structure to improve light propagation and external quantum efficiency, and a method for manufacturing the same.
상기 과제를 해결하기 위하여, 일 실시예에 따른 발광 소자는 기판; 및 복수개의 메인 필러들을 포함하고, 상기 복수개의 메인 필러들 각각은 상기 기판 상에 형성된 제1 반도체층; 상기 제1 반도체 상에 형성된 제2 반도체층; 및 상기 제1 반도체층과 제2 반도체층 사이에 배치된 활성층을 포함하며, 상기 제2 반도체층은 상기 제2 반도체층 상에 형성된 광결정 구조를 포함하고, 상기 광결정 구조는 복수의 홀들을 포함하며, 상기 복수의 홀들은 공기로 채워져 있다.In order to solve the above problem, a light emitting device according to an embodiment includes a substrate; and a plurality of main pillars, each of the plurality of main pillars comprising: a first semiconductor layer formed on the substrate; a second semiconductor layer formed on the first semiconductor; and an active layer disposed between the first semiconductor layer and the second semiconductor layer, wherein the second semiconductor layer includes a photonic crystal structure formed on the second semiconductor layer, and the photonic crystal structure includes a plurality of holes. , the plurality of holes are filled with air.
상기 광결정 구조는 상기 복수의 홀 상에 설치된 복수의 나노 필러들(nano pillars)을 포함할 수 있다.The photonic crystal structure may include a plurality of nano pillars installed on the plurality of holes.
상기 복수의 나노 필러들은 p-GaN 또는 SiO2의 산화물로 형성될 수 있다.The plurality of nano-pillars may be formed of p-GaN or SiO 2 oxide.
상기 복수의 나노 필러들은 1.4 내지 2.5의 굴절율을 가질 수 있다.The plurality of nano-fillers may have a refractive index of 1.4 to 2.5.
상기 복수의 나노 필러들은 ITO(Indium Tin Oxide) 및 산화 아연(Zinc oxide: ZnO)중 어느 하나를 포함할 수 있다.The plurality of nano-fillers may include either indium tin oxide (ITO) or zinc oxide (ZnO).
상기 복수의 나노 필러들은 패터닝이 가능한 절연 유기물 및 산화 무기물 중 어느 하나로 형성되며, 상기 절연 유기물 및 산화 무기물은 포토 레지스트(Photo resist), 폴리이미드(PI), Su-8, 및 에폭시를 포함할 수 있다.The plurality of nano-fillers are formed of any one of a patternable insulating organic material and an oxidized inorganic material, and the insulating organic material and an oxidized inorganic material may include photo resist, polyimide (PI), Su-8, and epoxy. there is.
상기 메인 필러는 원통형 형상, 사각형 기둥, 육각형 기둥 중 어느 하나의 형상을 가질 수 있다.The main pillar may have any one of a cylindrical shape, a square pillar, or a hexagonal pillar.
본 발명의 일 실시예에 따른 발광소자 제조 방법은 반도체 기판에 제 1 반도체층, 활성층 및 제 2 반도체층을 순차적으로 형성하는 단계; 상기 제2 반도체층을 가공하여 복수의 메인 필러를 형성하는 단계; 및 상기 메인 필러의 상부에 복수의 홀을 포함하는 광결정 구조를 형성하는 단계;를 포함할 수 있다. A method of manufacturing a light emitting device according to an embodiment of the present invention includes sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a semiconductor substrate; Processing the second semiconductor layer to form a plurality of main pillars; and forming a photonic crystal structure including a plurality of holes on the main pillar.
본 발명의 다른 실시예에 따른 발광소자 제조 방법은 반도체 기판에 제 1 반도체층, 활성층 및 제 2 반도체층을 순차적으로 형성하는 단계; 상기 제2 반도체층을 가공하여 복수의 메인 필러를 형성하는 단계; 상기 복수의 메인 필러의 사이드 표면에 절연 산화막 또는 질화막을 형성하여 필러층을 형성하는 단계; 및 상기 필러층에 복수의 홀을 포함하는 광결정 구조를 형성하는 단계;를 포함할 수 있다. A method of manufacturing a light emitting device according to another embodiment of the present invention includes sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a semiconductor substrate; Processing the second semiconductor layer to form a plurality of main pillars; forming a filler layer by forming an insulating oxide film or a nitride film on side surfaces of the plurality of main pillars; and forming a photonic crystal structure including a plurality of holes in the filler layer.
상기 발광소자 제조 방법은 상기 복수의 홀에 복수의 나노 필러들(nano pillars)을 설치하는 단계를 더 포함할 수 있다.The light emitting device manufacturing method may further include installing a plurality of nano pillars in the plurality of holes.
이상 설명한 본 발명의 실시예에 따르면, 측면(Side) 방향으로 손실되는 TM 모드를 없애고 버티컬(Vertical) 방향의 TE 모드로 바꾸어 External QE를 광 효율을 향상시킬 수 있으며, 수직방향으로의 발광하기 때문에 디스플레이 광원으로 적합하며, 특히 VR, AR, MR의 고해상도 디스플레이 제작에 적합한 발광 소자를 생성할 수 있다.According to the embodiment of the present invention described above, the external QE light efficiency can be improved by eliminating the TM mode lost in the side direction and changing it to the TE mode in the vertical direction, and emitting light in the vertical direction. It is suitable as a display light source, and can produce light-emitting elements especially suitable for producing high-resolution displays for VR, AR, and MR.
도 1은 본 발명의 광결정 구조를 갖는 발광 소자를 도시한 도면으로 도 1(a)는 본 발명의 제1 실시예에 따른 발광 소자의 사시도을 도시하며, 도 1(b)는 본 발명의 제1 실시예에 따른 발광 소자의 사시도을 도시한다.FIG. 1 is a diagram showing a light-emitting device having a photonic crystal structure of the present invention. FIG. 1(a) is a perspective view of a light-emitting device according to a first embodiment of the present invention, and FIG. 1(b) is a diagram showing a light-emitting device according to a first embodiment of the present invention. A perspective view of a light emitting device according to an embodiment is shown.
도 2는 본 발명의 제1 실시예에 따른 메인 필러의 구조를 설명하기 위한 도면이다.Figure 2 is a diagram for explaining the structure of the main pillar according to the first embodiment of the present invention.
도 3은 본 발명의 제2 실시예에 따른 메인 필러의 구조를 설명하기 위한 도면이다. 도 4에는 도 1의 발광 소자들의 단면도를 나타낸 도면이다.Figure 3 is a diagram for explaining the structure of the main pillar according to the second embodiment of the present invention. FIG. 4 is a cross-sectional view of the light emitting devices of FIG. 1.
도 5는 본 발명에 따른 다수의 디스플레이들을 도시한다. Figure 5 shows a number of displays according to the present invention.
도 6은 본 발명의 실시예들에 따른 광 패턴의 예들을 도시한다.6 shows examples of light patterns according to embodiments of the present invention.
이하, 첨부된 도면들을 참조하여, 본 발명의 바람직한 실시예들을 설명한다. 명세서 전체에 걸쳐서 동일한 참조 번호들은 실질적으로 동일한 구성 요소들을 의미한다. 이하의 설명에서, 본 발명과 관련된 기술 혹은 구성에 대한 구체적인 설명이 본 발명의 요지를 불필요하게 흐릴 수 있다고 판단되는 경우, 그 상세한 설명을 생략한다. 또한, 이하의 설명에서 사용되는 구성요소 명칭은 명세서 작성의 용이함을 고려하여 선택된 것으로, 실제 제품의 부품 명칭과 상이할 수 있다.Hereinafter, preferred embodiments of the present invention will be described with reference to the attached drawings. Like reference numerals refer to substantially the same elements throughout the specification. In the following description, if it is determined that a detailed description of technology or configuration related to the present invention may unnecessarily obscure the gist of the present invention, the detailed description will be omitted. Additionally, the component names used in the following description were selected in consideration of the ease of writing specifications and may be different from the component names of the actual product.
도 1은 본 발명의 실시예들에 따른 발광 소자들을 도시한 도면으로서, 도 1(a)는 본 발명의 제1 실시예에 따른 발광 소자를 도시한 도면이며, 도 1(b)는 본 발명의 제2 실시예에 따른 발광 소자를 도시한 도면이다.Figure 1 is a diagram showing light-emitting devices according to embodiments of the present invention. Figure 1(a) is a diagram showing a light-emitting device according to a first embodiment of the present invention, and Figure 1(b) is a diagram showing a light-emitting device according to a first embodiment of the present invention. This is a diagram showing a light emitting device according to the second embodiment.
먼저, 도 1(a)를 참조하면, 제1 실시예에 따른 발광 소자는 기판(200), 상기 기판(200) 상에 배치된 복수개의 메인 필러들(100), 상기 복수개의 메인 필러들(100)의 측면및 상부에 위치한 절연층(300)을 포함한다. First, referring to FIG. 1(a), the light emitting device according to the first embodiment includes a substrate 200, a plurality of main pillars 100 disposed on the substrate 200, and the plurality of main pillars ( It includes an insulating layer 300 located on the side and top of 100).
복수개의 메인 필러들(100)은 기판(200) 상에 제1 광결정 패턴으로 배치될 수 있다. 구체적으로, 발광 소자의 광학 특성에 따라 복수개의 메인 필러들(100)이 기판(200) 상에 배치되는 제1 광결정 패턴이 결정될 수 있다. 예컨대, 발광 소자의 발광 컬러에 따라 복수개의 메인 필러들(100) 사이의 간격 및 크기가 결정될 수 있다. The plurality of main pillars 100 may be arranged in a first photonic crystal pattern on the substrate 200. Specifically, the first photonic crystal pattern in which the plurality of main pillars 100 are disposed on the substrate 200 may be determined according to the optical characteristics of the light emitting device. For example, the spacing and size between the plurality of main pillars 100 may be determined according to the emission color of the light emitting device.
도 1 에서 복수개의 메인 필러들(100)은 원통형 형상을 가지는 것으로 개시되어 있다. 그러나 본 발명은 이에 한정되지 않으며, 복수개의 메인 필러들(100)은 육각형 기둥, 사각형 기둥 등 다른 형상을 가질 수 있다.In Figure 1, the plurality of main pillars 100 are disclosed as having a cylindrical shape. However, the present invention is not limited to this, and the plurality of main pillars 100 may have other shapes, such as hexagonal pillars or square pillars.
복수개의 메인 필러들(100) 각각의 크기는 1㎛(마이크로미터) 내지 200㎛ 사이의 범위 내에 있을 수 있다. 바람직하게는 복수개의 메인 필러들(100) 각각의 크기는 1㎛(마이크로미터) 내지 100㎛ 사이의 범위 내에 있을 수 있다. The size of each of the plurality of main pillars 100 may range from 1 μm (micrometer) to 200 μm. Preferably, the size of each of the plurality of main pillars 100 may be within the range of 1㎛ (micrometer) to 100㎛.
만약 복수개의 메인 필러들(100) 각각이 원통형 형상을 가지면, 원통형 형상의 지름은 5㎛(마이크로미터) 이하의 크기를 가질 수 있다. 복수개의 메인 필러들(100) 각각이 사각형 기둥 형상을 가지면, 사각형의 한 변의 길이는 5㎛ 이하의 크기를 가질 수 있다. 복수개의 메인 필러들(100) 각각이 육각형 기둥 형상을 가지면, 육각형의 중심을 지나는 선의 길이는 5㎛ 이하의 크기를 가질 수 있다. If each of the plurality of main pillars 100 has a cylindrical shape, the diameter of the cylindrical shape may be less than 5 μm (micrometer). If each of the plurality of main pillars 100 has a square pillar shape, the length of one side of the square may be 5 μm or less. If each of the plurality of main pillars 100 has a hexagonal pillar shape, the length of the line passing through the center of the hexagon may be 5 μm or less.
또한, 복수개의 메인 필러들(100) 각각은 광결정 구조를 가진다. 구체적으로 복수개의 메인 필러들(100) 각각은 그 상부에 형성된 복수의 홀들(132)을 포함한다. 상기 복수의 홀들(132)은 제2 광결정 패턴으로 배치될 수 있다. 또한, 상기 복수의 홀들(132)은 공기로 채워질 수 있다. 상기 복수의 홀들(132)은 원형 형상을 가지는 것이 바람직하다. Additionally, each of the plurality of main pillars 100 has a photonic crystal structure. Specifically, each of the plurality of main pillars 100 includes a plurality of holes 132 formed on its upper portion. The plurality of holes 132 may be arranged in a second photonic crystal pattern. Additionally, the plurality of holes 132 may be filled with air. The plurality of holes 132 preferably have a circular shape.
상기 복수의 홀들(132) 각각은 1㎛(마이크로미터) 이하의 크기를 가질 수 있다. 예컨대, 상기 복수의 홀들(132) 각각의 지름이 ㎛ 이하의 크기를 가질 수 있다. Each of the plurality of holes 132 may have a size of 1 μm (micrometer) or less. For example, each of the plurality of holes 132 may have a diameter of ㎛ or less.
도 1(b)를 참조하면, 제2 실시예에 따른 발광 소자는 복수개의 메인 필러들(100)에 형성된 광결정 구조를 제외하고 제1 실시예에 따른 발광 소자와 유사한 구성을 가지므로 그 상세한 설명을 생략한다. Referring to FIG. 1(b), the light emitting device according to the second embodiment has a similar configuration to the light emitting device according to the first embodiment except for the photonic crystal structure formed in the plurality of main pillars 100, so the detailed description thereof is provided. omit.
제2 실시예에 따른 발광 소자의 복수개의 메인 필러들(100) 각각은 복수의 홀들(132)을 포함하며, 상기 복수의 홀들(132) 상에 형성된 복수개의 나노 필러들(150)을 포함한다. Each of the plurality of main pillars 100 of the light emitting device according to the second embodiment includes a plurality of holes 132, and includes a plurality of nano pillars 150 formed on the plurality of holes 132. .
상기 복수의 나노 필러들(150)은 p-GaN 또는 SiO2의 산화물로 형성될 수 있다. 상기 복수의 나노 필러들(150)은 1.5의 굴절율을 가질 수 있다. 상기 복수의 나노 필러들(150)은 ITO(Indium Tin Oxide) 및 산화 아연(Zinc oxide: ZnO)중 어느 하나로 형성될 수 있다. The plurality of nano-pillars 150 may be formed of p-GaN or SiO 2 oxide. The plurality of nano-pillars 150 may have a refractive index of 1.5. The plurality of nano-fillers 150 may be formed of either indium tin oxide (ITO) or zinc oxide (ZnO).
이 경우, 절연층(300)은 복수의 나노 필러들(150) 하나의 사이드 벽(side wall)을 절연막으로 둘러싸거나 나노 필러들(150) 사이를 절연 물질로 채우도록 형성될 수 있다. 이 경우, 절연층(300)은 나노 필러들(150) 사이를 절연시킬 수 있다. In this case, the insulating layer 300 may be formed to surround the side wall of one of the plurality of nano-pillars 150 with an insulating film or to fill the space between the nano-pillars 150 with an insulating material. In this case, the insulating layer 300 may insulate the nano-pillars 150.
상기와 같은 구성을 갖는 발광 소자들은 높은 휘도, 레이저와 유사한 방사 특성(Laser like Radiation), 높은 해상도, 저전력소모, 높은 응답속도를 가진다. Light-emitting devices having the above configuration have high brightness, laser-like radiation, high resolution, low power consumption, and high response speed.
즉, 발광 소자들의 메인 필러들이 서브-픽셀(sub-pixel)을 구성할 수 있다. 본 발명에 의한 발광소자는, 앞서 설명한 메인 필러들로 이루어진 픽셀들이 매트릭스 형태로 배치된 구조를 가질 수 있다. That is, the main pillars of the light-emitting devices can form a sub-pixel. The light emitting device according to the present invention may have a structure in which pixels composed of the main pillars described above are arranged in a matrix form.
도 2는 본 발명의 제1 실시예에 따른 메인 필러의 구조를 설명하기 위한 도면이다. 도 2를 참조하면, 광결정 구조를 갖는 메인 필러(100)는, 기판(200) 상에 형성될 수 있다. 메인 필러(100)는 제1 반도체층(110), 제2 반도체층(130), 상기 제1 반도체층(110)과 제2 반도체층(130) 사이에 배치된 활성층(120), 및 상기 제2 반도체층(130)에 형성된 광결정 구조를 포함한다. 광결정(photonic crystal)이란 매트릭스와 서로 다른 굴절율을 갖는 입자가 규칙적으로 배열되어 결정격자를 이루는 물질로서, 빛의 파장 절반 수준에서 유전상수가 주기적으로 변함으로써 광 밴드갭을 갖는 물질을 말한다. Figure 2 is a diagram for explaining the structure of the main pillar according to the first embodiment of the present invention. Referring to FIG. 2, the main pillar 100 having a photonic crystal structure may be formed on the substrate 200. The main pillar 100 includes a first semiconductor layer 110, a second semiconductor layer 130, an active layer 120 disposed between the first semiconductor layer 110 and the second semiconductor layer 130, and the second semiconductor layer 130. 2 It includes a photonic crystal structure formed in the semiconductor layer 130. A photonic crystal is a material that forms a crystal lattice by regularly arranging particles with different refractive indices from the matrix. It refers to a material that has an optical band gap due to periodic changes in dielectric constant at half the wavelength of light.
광 밴드갭은 반도체에서 전자의 밴드갭이 전자를 제어하는 것과 동일한 방식으로 광결정에서 광자를 제어하는데, 외부에서 넓은 범위의 스펙트럼을 갖는 빛이 광결정에 입사하는 경우, 광 밴드갭에 해당하는 파장 대의 빛만 물질 내부로 전파되지 못하고 선택적으로 반사된다. 이와 같은 광 밴드갭이 가시광선 영역에 존재하는 경우, 광 밴드갭에 의한 선택적 반사는 반사색으로 나타나게 된다.The optical bandgap controls photons in a photonic crystal in the same way that the bandgap of electrons controls electrons in a semiconductor. When light with a wide range of spectrum from the outside is incident on the photonic crystal, the wavelength corresponding to the optical bandgap is Only light cannot propagate inside the material and is selectively reflected. When such an optical bandgap exists in the visible light region, selective reflection due to the optical bandgap appears as a reflected color.
광결정의 반사색은 매트릭스 물질 및 그 내부에 분산된 콜로이드 입자의 굴절율, 결정구조, 콜로이드 입자의 크기, 콜로이드 입자 간의 간격 등에 의해 결정된다. 따라서 이를 제어함으로써 원하는 반사색을 갖는 광결정을 제조할 수 있다.The reflected color of a photonic crystal is determined by the refractive index of the matrix material and the colloidal particles dispersed therein, the crystal structure, the size of the colloidal particles, and the spacing between colloidal particles. Therefore, by controlling this, photonic crystals with desired reflection colors can be manufactured.
본 실시예에서 상기 기판(200)은 사파이어로 이루어져 있다. 다른 실시예에서, 상기 기판(200)은 질화갈륨(GaN)으로 이루어질 수 있으며, 또는 탄화규소(SiC), 산화아연(ZnO) 등 투명 전도성 기판으로 이루어질 수 있다. In this embodiment, the substrate 200 is made of sapphire. In another embodiment, the substrate 200 may be made of gallium nitride (GaN), or a transparent conductive substrate such as silicon carbide (SiC) or zinc oxide (ZnO).
본 발명의 바람직한 일 실시예에서 제1 반도체층(110)은 n-타입 반도체층으로, 제2 반도체층(130)은 p-타입 반도체층으로 각각 형성되었으나, 그 역의 경우도 가능함은 물론이다.In a preferred embodiment of the present invention, the first semiconductor layer 110 is formed as an n-type semiconductor layer, and the second semiconductor layer 130 is formed as a p-type semiconductor layer, but the reverse case is also possible, of course. .
n-타입 반도체층(110)은 n-GaN 또는 un-GaN을 포함할 수 있다. 구체적으로, 상기 n-타입 반도체층(110)은 n형 도전형 불순물(Si)이 도핑된 GaN층 또는 GaN/AlGaN층으로 형성될 수 있다. The n-type semiconductor layer 110 may include n-GaN or un-GaN. Specifically, the n-type semiconductor layer 110 may be formed of a GaN layer or a GaN/AlGaN layer doped with an n-type conductivity impurity (Si).
상기 p-타입 반도체층은 p-GaN을 포함할 수 있다. 구체적으로, 상기 p-타입 반도체층 (130)은 p형 도전형 불순물이 도핑된 GaN층으로 형성하거나, p형 도전형 불순물이 도핑된 GaN층 상에 박막 AlGaN층을 형성한 구조를 적용할 수 있다.The p-type semiconductor layer may include p-GaN. Specifically, the p-type semiconductor layer 130 may be formed of a GaN layer doped with a p-type conductivity impurity, or a thin AlGaN layer may be formed on a GaN layer doped with a p-type conductivity impurity. there is.
상기 활성층(120)은 복수의 우물층(121)과 복수의 배리어층(122)이 교호적으로 배치된 다중 양자 우물(MQW; Multi Quantum Well)구조를 가진다.The active layer 120 has a multi quantum well (MQW) structure in which a plurality of well layers 121 and a plurality of barrier layers 122 are alternately arranged.
제2 반도체층(130)에는 5마이크로미터 이하의 메인 필러들이 형성된다. 상기 메인 필러들은 마이크로 LED 서브 픽셀로 기능할 수 있다. 그리고 각각의 메인 필러 상에 광결정 구조가 형성된다. Main pillars of 5 micrometers or less are formed in the second semiconductor layer 130. The main pillars can function as micro LED subpixels. And a photonic crystal structure is formed on each main pillar.
광결정 구조는 제2 반도체층(130)의 상부에 형성된 복수의 홀(132)을 포함할 수 있다. 복수의 홀(132)에는 공기가 채워진다. 제2 반도체층(130)은 화합물 GaN으로 형성될 수 있다. 제2 반도체층(130)은 대략 2.5의 굴절율을 가지며, 복수의 홀(130)에 채워진 공기는 대략 1의 굴절율을 갖는다. The photonic crystal structure may include a plurality of holes 132 formed on the second semiconductor layer 130. The plurality of holes 132 are filled with air. The second semiconductor layer 130 may be formed of the compound GaN. The second semiconductor layer 130 has a refractive index of approximately 2.5, and the air filled in the plurality of holes 130 has a refractive index of approximately 1.
도 1 및 도 2의 실시예들에서 홀들(132)은 원형 형상을 가지는 것으로 개시되어 있지만, 홀들(132)은 육각형, 사각형 등 다른 형상을 가질 수 있다. 홀들(132)의 지름(diameter) 또는 홀들(132) 사이의 간격은 메인 필러(100)에 의해 발광되는 광의 광 특성에 따라 결정될 수 있다.Although the holes 132 in the embodiments of FIGS. 1 and 2 are disclosed as having a circular shape, the holes 132 may have other shapes such as hexagons or squares. The diameter of the holes 132 or the spacing between the holes 132 may be determined according to the optical characteristics of the light emitted by the main pillar 100.
따라서, 메인 필러(100)는 제2 반도체층(130)에서 1의 굴절율과 2.5의 굴절율이 소정의 광결정 패턴으로 배열된(배치된) 구조를 갖는다. Accordingly, the main pillar 100 has a structure in which the refractive indices of 1 and 2.5 in the second semiconductor layer 130 are arranged (placed) in a predetermined photonic crystal pattern.
이 경우, 제2 반도체층(130)에서 1의 굴절율과 2.5의 굴절율이 소정의 광결정 패턴으로 배치된 광결정 구조는 포토닉 에너지 밴드 갭을 가지게 된다. 그에 따라, 활성층(120)으로부터 방출된 광은 포토닉 에너지 밴드 갭에 대응하는 부분은 히든되고 나머지 부분은 더 잘 방사되게 된다.In this case, the photonic crystal structure in which the refractive indices of 1 and 2.5 are arranged in a predetermined photonic crystal pattern in the second semiconductor layer 130 has a photonic energy band gap. Accordingly, the part corresponding to the photonic energy band gap of the light emitted from the active layer 120 is hidden and the remaining part is better radiated.
다시 말해, 2.5의 굴절율을 가지는 제2 반도체층(130)으로부터 공기(air)로 활성층(120)에서 발광하는 빛중 일정한 각도로 들어오는 빛은 영원히 갇히게 된다. 다시 말해, 제2 반도체층(130)에 광결정 구조를 형성함으로써(제2 반도체층(130)의 표면의 텍스쳐(Texturing)) 활성층(120)으로부터 방출되는 광의 발산각을 변경시킨다. In other words, among the light emitted from the active layer 120 from the second semiconductor layer 130, which has a refractive index of 2.5, into air, light that enters at a certain angle is trapped forever. In other words, forming a photonic crystal structure in the second semiconductor layer 130 (texturing the surface of the second semiconductor layer 130) changes the divergence angle of light emitted from the active layer 120.
이 경우, 제2 반도체층(130)에 형성된 홀들(132)의 크기 및 간격은 광의 원하는 광학 특성에 따라 시뮬레이션을 통해 결정될 수 있다. 그에 따라, 광결정 구조를 가지는 발광 소자는 측면(Side) 방향으로 손실되는 TM 모드를 없애고 버티컬(Vertical) 방향의 TE 모드로 바꾸어 External QE를 높일 수 있다.In this case, the size and spacing of the holes 132 formed in the second semiconductor layer 130 may be determined through simulation according to the desired optical characteristics of light. Accordingly, a light emitting device having a photonic crystal structure can increase external QE by eliminating the TM mode lost in the side direction and changing it to the TE mode in the vertical direction.
도 3은 본 발명의 제2 실시예에 따른 메인 필러의 구조를 설명하기 위한 도면이다. 도 3을 참조하면, 광결정 구조를 갖는 메인 필러(100)는 도 2의 메인 필러와 유사한 구성을 가지므로, 유사한 구성에 대해서는 간략히 설명한다.Figure 3 is a diagram for explaining the structure of the main pillar according to the second embodiment of the present invention. Referring to FIG. 3, the main pillar 100 having a photonic crystal structure has a similar structure to the main pillar of FIG. 2, and the similar structure will be briefly described.
메인 필러(100)는 제1 반도체층(110), 제2 반도체층(130), 상기 제1 반도체층(110)과 제2 반도체층(130) 사이에 배치된 활성층(120), 및 상기 제2 입 반도체층(130)에 형성된 광결정 구조를 포함하는 할 수 있다.The main pillar 100 includes a first semiconductor layer 110, a second semiconductor layer 130, an active layer 120 disposed between the first semiconductor layer 110 and the second semiconductor layer 130, and the second semiconductor layer 130. It may include a photonic crystal structure formed in the two-bit semiconductor layer 130.
제2 반도체층(130)에는 상기 광결정 구조가 형성된다. 광결정 구조는 복수의 홀(132)을 포함할 수 있다. 상기 광결정 구조는 상기 복수의 홀(132)에 설치된 복수의 나노 필러들(pillars)(150)을 포함할 수 있다.The photonic crystal structure is formed in the second semiconductor layer 130. The photonic crystal structure may include a plurality of holes 132. The photonic crystal structure may include a plurality of nano pillars 150 installed in the plurality of holes 132.
상기 복수의 나노 필러들은 패터닝이 가능한 절연 유기물 및 산화 무기물 중 어느 하나로 형성될 수 있다. 상기 절연 유기물 및 산화 무기물은 포토 레지스트(Photo resist), 폴리이미드(PI), Su-8, 및 에폭시를 포함할 수 있다.The plurality of nano-fillers may be formed of either an insulating organic material or an oxidized inorganic material capable of being patterned. The insulating organic material and oxidized inorganic material may include photo resist, polyimide (PI), Su-8, and epoxy.
일 실시예에 따라, 상기 복수의 나노 필러들(150)은 p-GaN 또는 SiO2의 산화물로 형성될 수 있다. 복수의 나노 필러들(150)이 GaN으로 형성되는 경우, 2.5의 굴절율을 가질 수 있다. 복수의 나노 필러들(150)이 SiO2으로 형성되는 경우, 1.5의 굴절율을 가질 수 있다.According to one embodiment, the plurality of nano-pillars 150 may be formed of p-GaN or SiO 2 oxide. When the plurality of nano-pillars 150 are made of GaN, they may have a refractive index of 2.5. When the plurality of nano-pillars 150 are formed of SiO 2 , they may have a refractive index of 1.5.
다른 실시예에 따라, 상기 복수의 나노 필러들(150)은 ITO(Indium Tin Oxide) 및 산화 아연(Zinc oxide: ZnO)중 어느 하나로 형성될 수 있다. 복수의 나노 필러들(150)이 산화 아연(ZnO)으로 형성되는 경우, 2.2의 굴절율을 가질 수 있다.According to another embodiment, the plurality of nano-fillers 150 may be formed of either indium tin oxide (ITO) or zinc oxide (ZnO). When the plurality of nano-pillars 150 are formed of zinc oxide (ZnO), they may have a refractive index of 2.2.
상기 복수의 나노 필러들(150)은 1.4 내지 2.5의 굴절율을 가질 수 있다. 바람직하게는 상기 복수의 나노 필러들(150)은 1.5의 굴절율을 가질 수 있다.The plurality of nano-pillars 150 may have a refractive index of 1.4 to 2.5. Preferably, the plurality of nano-pillars 150 may have a refractive index of 1.5.
이 경우, 제2 반도체층(130)은 대략 2.5의 굴절율을 가지므로, 메인 필러(100)는 제2 반도체층(130)에서 1의 굴절율과 1.4와 2.5 사이에서 결정된 굴절율이 소정의 광결정 패턴으로 배열된(배치된) 구조를 갖는다. In this case, since the second semiconductor layer 130 has a refractive index of approximately 2.5, the main pillar 100 has a refractive index of 1 in the second semiconductor layer 130 and a refractive index determined between 1.4 and 2.5 in a predetermined photonic crystal pattern. It has an arranged (arranged) structure.
이 경우, 제2 반도체층(130)에서 1.4와 2.5 사이에서 결정된 굴절율과 2.5의 굴절율이 광결정 패턴으로 배치된 광결정 구조는 포토닉 에너지 밴드 갭을 가지게 된다. 그에 따라, 활성층(120)으로부터 방출된 광은 포토닉 에너지 밴드 갭에 대응하는 부분은 히든되고 나머지 부분은 더 잘 방사되게 된다.In this case, the photonic crystal structure in which the refractive index of the second semiconductor layer 130 is determined between 1.4 and 2.5 and the refractive index of 2.5 is arranged in a photonic crystal pattern has a photonic energy band gap. Accordingly, the part corresponding to the photonic energy band gap of the light emitted from the active layer 120 is hidden and the remaining part is better radiated.
다시 말해, 2.5의 굴절율을 가지는 제2 반도체층(130)으로부터 나노 필러들(150)로 활성층(120)에서 발광하는 빛 중 일정한 각도로 들어오는 빛은 영원히 갇히게 된다. In other words, among the light emitted from the active layer 120 from the second semiconductor layer 130 having a refractive index of 2.5 to the nano-pillars 150, light that enters at a certain angle is trapped forever.
이 경우, 제2 반도체층(130)에 형성된 홀들(132)의 크기 및 간격 또는 나노 필러들(150)의 길이는 광의 원하는 광학 특성에 따라 시뮬레이션을 통해 결정될 수 있다. In this case, the size and spacing of the holes 132 formed in the second semiconductor layer 130 or the length of the nano pillars 150 may be determined through simulation according to the desired optical characteristics of light.
그에 따라, 광결정 구조를 가지는 발광 소자는 측면(Side) 방향으로 손실되는 TM 모드를 없애고 버티컬(Vertical) 방향의 TE 모드로 바꾸어 External QE를 높일 수 있다.Accordingly, a light emitting device having a photonic crystal structure can increase external QE by eliminating the TM mode lost in the side direction and changing it to the TE mode in the vertical direction.
도 4에는 도 1의 발광 소자들의 단면도를 나타낸 도면이다. FIG. 4 is a cross-sectional view of the light emitting devices of FIG. 1.
도 4(a)는 복수의 홀을 포함하는 메인 필러의 단면이 도시되어 있고, 도 4(b)는 복수의 나노 필러를 포함하는 메인 소자의 단면이 도시되어 있다. FIG. 4(a) shows a cross section of a main pillar including a plurality of holes, and FIG. 4(b) shows a cross section of a main element including a plurality of nano pillars.
도 5는 본 발명에 따른 다수의 발광 소자들을 도시한다. Figure 5 shows a number of light-emitting devices according to the invention.
도 5를 참조하면, 메인 필러(100)의 홀들(132)의 깊이 또는 길이를 변경함으로써 또는 홀들(132)에 설치된 나노 필러들의 두께 및 길이를 변경함으로써 발광 소자들(100)이 방출하는 광의 색상 또한 변화할 수 있다. 도 4에서는 발광 소자들은 적색, 청색 및 녹색을 각각 발광하고 있다.Referring to FIG. 5, the color of the light emitted by the light emitting devices 100 is changed by changing the depth or length of the holes 132 of the main pillar 100 or by changing the thickness and length of the nano pillars installed in the holes 132. It can also change. In Figure 4, the light emitting elements emit red, blue, and green respectively.
상기와 같은 발광 소자는 외광을 반사하여 영상을 표시하는 반사형 디스플레이로서, 백 라이트 등의 광원을 요구하지 않으며, 특히 실외 또는 밝은 조명 하에서 저전력으로도 영상을 표시할 수 있는 효과를 갖는다.The above light-emitting device is a reflective display that displays an image by reflecting external light, does not require a light source such as a backlight, and has the effect of displaying an image at low power, especially outdoors or under bright lighting.
또한, 발광 소자 자체의 색이 변화하여 영상을 표시하므로, 별도의 컬러 필터를 요하지 않으며, 하나의 화면을 구현하는 데 있어서 모든 픽셀을 이용할 수 있다. 예를 들어 R/G/B 서브 픽셀로 이루어진 종래의 표시 장치는, R, G, B 중 어느 하나의 색상을 구현하기 위해서, 다른 두 서브 픽셀은 블랙 영상을 표시하여야 하므로, 실질적인 해상도가 낮아지는 문제가 발생하였다. 반면, 본 발명에 의한 디스플레이는 어떤 색을 표시하더라도 모든 픽셀을 이용하므로 실질적인 해상도가 증가하는 효과를 갖는다.Additionally, since the color of the light emitting device itself changes to display an image, a separate color filter is not required, and all pixels can be used to create a single screen. For example, in a conventional display device composed of R/G/B subpixels, in order to implement one color among R, G, and B, the other two subpixels must display a black image, which lowers the actual resolution. A problem occurred. On the other hand, the display according to the present invention uses all pixels no matter what color it displays, so it has the effect of increasing actual resolution.
상기와 같은 디스플레이는 외광을 반사하여 영상을 표시하는 것으로서, 백 라이트 등의 광원을 요구하지 않으며, 특히 실외 또는 밝은 조명 하에서 저전력으로도 영상을 표시할 수 있는 효과를 갖는다.The above display displays an image by reflecting external light, does not require a light source such as a backlight, and has the effect of displaying an image with low power, especially outdoors or under bright lighting.
이하, 본 발명의 일 실시예에 따른 발광 소자 제조 방법을 설명한다.Hereinafter, a method for manufacturing a light emitting device according to an embodiment of the present invention will be described.
먼저, 도 2 및 도 3을 참조하면, 먼저 기판(200) 상에 제1 반도체층(110), 활성층(120) 및 제2 반도체층(130)을 순차적으로 형성한다. 상기 제2 반도체층(130)은 GaN 화합물로 형성될 수 있다.First, referring to FIGS. 2 and 3 , first, the first semiconductor layer 110, the active layer 120, and the second semiconductor layer 130 are sequentially formed on the substrate 200. The second semiconductor layer 130 may be formed of a GaN compound.
이어서, 제2 반도체층(130)을 가공하여 5 마이크로미터 이하의 크기를 가지는 메인 필러(Main Pillar)(100)를 형성한다. Next, the second semiconductor layer 130 is processed to form a main pillar 100 having a size of 5 micrometers or less.
메인 필러(100)가 원통형인 경우 단면의 원의 지름은 5 ㎛ 이하이고, 메인 필러(100)가 사각 기둥인 경우, 단면의 사각형의 한 변의 길이가 5 ㎛ 이하가 될 수 있다. If the main pillar 100 is cylindrical, the diameter of the circle in the cross section may be 5 ㎛ or less, and if the main pillar 100 is a square pillar, the length of one side of the square in the cross section may be 5 ㎛ or less.
이어서, 메인 필러(100)의 상부에 광결정 구조를 형성한다. 구체적으로, 메인 필러(100)의 상부에 복수의 홀들(132)을 형성한다. 상기 복수의 홀들(132)은 미리 결정된 광 패턴으로 배치될 수 있다.Next, a photonic crystal structure is formed on the top of the main pillar 100. Specifically, a plurality of holes 132 are formed in the upper part of the main pillar 100. The plurality of holes 132 may be arranged in a predetermined light pattern.
다른 실시예에 따라, 복수의 홀들(132)를 형성하기 전에 메인 필러(100) 상부에 SiO2 및 Al2O3, SiN, HfO, WO 등의 절연 산화막/질화막을 성장시킨으로써 필러층을 형성하고, 필러층에 홀들(132)을 형성할 수도 있다. 이 경우, 필러층과 물리적 특성과 제2 반도체층(130)의 물리적 특성이 다를 수 있다. According to another embodiment, before forming the plurality of holes 132, a filler layer is formed by growing an insulating oxide/nitride film such as SiO2, Al2O3, SiN, HfO, WO, etc. on the main pillar 100, and the filler layer is formed. Holes 132 may be formed in . In this case, the physical properties of the filler layer and the physical properties of the second semiconductor layer 130 may be different.
복수의 홀들(132)은 원형인 것이 바람직하다. 복수의 홀들(132)의 지름은 1 ㎛ 이하의 크기를 가질 수 있다. 복수의 홀들의 개수는 1 내지 10일 수 있다.The plurality of holes 132 are preferably circular. The diameter of the plurality of holes 132 may be 1 μm or less. The number of holes may be 1 to 10.
구체적으로, 도 5(b) 및 도 5(c)에 도시된 바와 같이, 제 2 반도체층(130) 상에 광결정 구조의 나노 패턴을 생성한다. 이 때, 디스플레이들의 색에 따라 광결정 구조에서 홀(132) 또는 나노 필러(150)의 깊이 또는 폭이 결정될 수 있다.Specifically, as shown in FIGS. 5(b) and 5(c), a nanopattern with a photonic crystal structure is created on the second semiconductor layer 130. At this time, the depth or width of the hole 132 or nano-pillar 150 in the photonic crystal structure may be determined depending on the color of the displays.
그리고, 메인 필러(100) 상에는 절연층(300)이 형성될 수 있다. 이 경우, 메인 필러는 포토 레지스트(Photo resist), PI, Su-8, epoxy 등 패터닝이 가능한 절연 유기물 및 산화 무기물로 둘러 쌓이거나 채워질 수 있다.And, an insulating layer 300 may be formed on the main pillar 100. In this case, the main filler may be surrounded or filled with insulating organic and oxidized inorganic materials capable of patterning, such as photo resist, PI, Su-8, and epoxy.
도 6에는 본 발명의 실시예들에 따른 광 패턴의 예들을 나타나 있다. 도 6에 도시된 바와 같이, 발광 소자의 광 특성에 따라 상이한 패턴이 존재할 수 있다. 이후, 복수의 홀(132)에 복수의 나노 필러들(pillars)을 설치할 수 있다.Figure 6 shows examples of light patterns according to embodiments of the present invention. As shown in FIG. 6, different patterns may exist depending on the optical characteristics of the light emitting device. Afterwards, a plurality of nano pillars may be installed in the plurality of holes 132.
이상 설명한 본 발명의 실시예에 따르면, 반도체층에 광결정 구조를 형성함으로써 광 효율을 향상시킬 수 있다. 또한, 광결정 구조를 가지는 발광 소자는 측면(Side) 방향으로 손실되는 TM 모드를 없애고 버티컬(Vertical) 방향의 TE 모드로 바꾸어 External QE를 높일 수 있다.According to the embodiment of the present invention described above, light efficiency can be improved by forming a photonic crystal structure in the semiconductor layer. Additionally, a light emitting device with a photonic crystal structure can increase external QE by eliminating the TM mode lost in the side direction and changing it to the TE mode in the vertical direction.
이상의 설명은 본 발명을 예시적으로 설명한 것에 불과하며, 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자에 의해 본 발명의 기술적 사상에서 벗어나지 않는 범위에서 다양한 변형이 가능할 것이다. 따라서 본 발명의 명세서에 개시된 실시 예들은 본 발명을 한정하는 것이 아니다. 본 발명의 범위는 아래의 특허청구범위에 의해 해석되어야 하며, 그와 균등한 범위 내에 있는 모든 기술도 본 발명의 범위에 포함되는 것으로 해석해야 할 것이다.The above description is merely an exemplary description of the present invention, and various modifications may be made by those skilled in the art without departing from the technical spirit of the present invention. Accordingly, the embodiments disclosed in the specification of the present invention do not limit the present invention. The scope of the present invention should be interpreted in accordance with the scope of the patent claims below, and all technologies within the equivalent scope thereof should be interpreted as being included in the scope of the present invention.
Claims (10)
- 기판; 및 Board; and복수개의 메인 필러들을 포함하고, Contains a plurality of main fillers,상기 복수개의 메인 필러들 각각은Each of the plurality of main fillers is상기 기판 상에 형성된 제1 반도체층; a first semiconductor layer formed on the substrate;상기 제1 반도체 상에 형성된 제2 반도체층; 및a second semiconductor layer formed on the first semiconductor; and상기 제1 반도체층과 제2 반도체층 사이에 배치된 활성층을 포함하며, It includes an active layer disposed between the first semiconductor layer and the second semiconductor layer,상기 제2 반도체층은 상기 제2 반도체층 상에 형성된 광결정 구조를 포함하고, The second semiconductor layer includes a photonic crystal structure formed on the second semiconductor layer,상기 광결정 구조는 복수의 홀들을 포함하며, The photonic crystal structure includes a plurality of holes,상기 복수의 홀들은 공기로 채워진 것을 특징으로 하는 발광 소자.A light emitting device, characterized in that the plurality of holes are filled with air.
- 제1항에 있어서,According to paragraph 1,상기 광결정 구조는 상기 복수의 홀 상에 설치된 복수의 나노 필러들(nano pillars)을 포함하는 것을 특징으로 하는 발광 소자.A light emitting device wherein the photonic crystal structure includes a plurality of nano pillars installed on the plurality of holes.
- 제2항에 있어서,According to paragraph 2,상기 복수의 나노 필러들은 p-GaN 또는 SiO2의 산화물로 형성되는 것을 특징으로 하는 발광 소자.A light emitting device, wherein the plurality of nano-pillars are formed of an oxide of p-GaN or SiO 2 .
- 제2항에 있어서,According to paragraph 2,상기 복수의 나노 필러들은 ITO(Indium Tin Oxide) 및 산화 아연(Zinc oxide: ZnO)중 어느 하나를 포함하는 것을 특징으로 하는 발광 소자.A light emitting device wherein the plurality of nano-fillers include one of ITO (Indium Tin Oxide) and zinc oxide (ZnO).
- 제2항에 있어서,According to paragraph 2,상기 복수의 나노 필러들은 1.4 내지 2.5의 굴절율을 갖는 것을 특징으로 하는 발광 소자.A light emitting device characterized in that the plurality of nano-pillars have a refractive index of 1.4 to 2.5.
- 제1항에 있어서, According to paragraph 1,상기 메인 필러는 원통형 형상, 사각형 기둥, 육각형 기둥 중 어느 하나의 형상을 가지는 것을 특징으로 하는 발광 소자.The main pillar is a light emitting device characterized in that it has any one of a cylindrical shape, a square pillar, and a hexagonal pillar.
- 반도체 기판에 제 1 반도체층, 활성층 및 제 2 반도체층을 순차적으로 형성하는 단계;sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a semiconductor substrate;상기 제2 반도체층을 가공하여 복수의 메인 필러를 형성하는 단계; 및Processing the second semiconductor layer to form a plurality of main pillars; and상기 메인 필러의 상부에 복수의 홀을 포함하는 광결정 구조를 형성하는 단계;를 포함하는 발광소자 제조 방법.A method of manufacturing a light emitting device comprising: forming a photonic crystal structure including a plurality of holes on an upper part of the main pillar.
- 반도체 기판에 제 1 반도체층, 활성층 및 제 2 반도체층을 순차적으로 형성하는 단계;sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a semiconductor substrate;상기 제2 반도체층을 가공하여 복수의 메인 필러를 형성하는 단계; Processing the second semiconductor layer to form a plurality of main pillars;상기 복수의 메인 필러의 사이드 표면에 절연 산화막 또는 질화막을 형성하여 필러층을 형성하는 단계; 및forming a filler layer by forming an insulating oxide film or a nitride film on side surfaces of the plurality of main pillars; and상기 필러층에 복수의 홀을 포함하는 광결정 구조를 형성하는 단계;를 포함하는 발광소자 제조 방법.A method of manufacturing a light emitting device comprising: forming a photonic crystal structure including a plurality of holes in the filler layer.
- 제7항 또는 제8항에 있어서, According to clause 7 or 8,상기 복수의 홀에 복수의 나노 필러들(nano pillars)을 설치하는 단계를 더 포함하는 것을 특징으로 하는 제조 방법.A manufacturing method further comprising installing a plurality of nano pillars in the plurality of holes.
- 제9항에 있어서, According to clause 9,상기 복수의 나노 필러들 상에 패터닝이 가능한 절연 유기물 및 산화 무기물 중 어느 하나로 형성된 절연층을 형성하는 단계를 더 포함하며,It further includes forming an insulating layer made of any one of a patternable insulating organic material and an oxidized inorganic material on the plurality of nano-fillers,상기 절연 유기물 및 산화 무기물은 포토 레지스트(Photo resist), 폴리이미드(PI), Su-8, 및 에폭시를 포함하는 것을 특징으로 하는 제조 방법.A manufacturing method characterized in that the insulating organic material and oxidized inorganic material include photo resist, polyimide (PI), Su-8, and epoxy.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020220047819A KR102654365B1 (en) | 2022-04-18 | 2022-04-18 | Light emitting element and manufacturing method thereof |
KR10-2022-0047819 | 2022-04-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2023204527A1 true WO2023204527A1 (en) | 2023-10-26 |
Family
ID=88420337
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2023/005046 WO2023204527A1 (en) | 2022-04-18 | 2023-04-13 | Light emitting element and manufacturing method thereof |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR102654365B1 (en) |
WO (1) | WO2023204527A1 (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4755901B2 (en) * | 2003-08-08 | 2011-08-24 | サンキュウ カン | High brightness nitride micro light emitting diode and method for manufacturing the same |
KR20120034910A (en) * | 2010-10-04 | 2012-04-13 | 삼성엘이디 주식회사 | Semiconductor light emitting device and preparing therof |
KR101933761B1 (en) * | 2016-07-01 | 2018-12-28 | 고려대학교 산학협력단 | Lateral Light Emitting Device And Method For Fabrication Of The Same |
KR101985737B1 (en) * | 2017-05-08 | 2019-06-04 | 고려대학교 산학협력단 | Micro LED and manufacturing method of the same |
WO2021209702A1 (en) * | 2020-04-15 | 2021-10-21 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Electroluminescent diode comprising a hybrid structure formed of layers and nanowires |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20130052825A (en) * | 2011-11-14 | 2013-05-23 | 삼성전자주식회사 | Light emitting device |
KR20130077600A (en) * | 2011-12-29 | 2013-07-09 | 일진엘이디(주) | Nitride based light emitting device with nano rod of zinc oxide and producing method thereof |
ES2792076T3 (en) * | 2017-02-08 | 2020-11-10 | Consejo Superior Investigacion | Monolithic device adjustable quantum light source and quantum optical circuit thereof |
KR102335625B1 (en) * | 2020-07-15 | 2021-12-07 | 순천대학교 산학협력단 | Micro lighting emitting apparatus and method for manufacturing the same |
-
2022
- 2022-04-18 KR KR1020220047819A patent/KR102654365B1/en active IP Right Grant
-
2023
- 2023-04-13 WO PCT/KR2023/005046 patent/WO2023204527A1/en unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4755901B2 (en) * | 2003-08-08 | 2011-08-24 | サンキュウ カン | High brightness nitride micro light emitting diode and method for manufacturing the same |
KR20120034910A (en) * | 2010-10-04 | 2012-04-13 | 삼성엘이디 주식회사 | Semiconductor light emitting device and preparing therof |
KR101933761B1 (en) * | 2016-07-01 | 2018-12-28 | 고려대학교 산학협력단 | Lateral Light Emitting Device And Method For Fabrication Of The Same |
KR101985737B1 (en) * | 2017-05-08 | 2019-06-04 | 고려대학교 산학협력단 | Micro LED and manufacturing method of the same |
WO2021209702A1 (en) * | 2020-04-15 | 2021-10-21 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Electroluminescent diode comprising a hybrid structure formed of layers and nanowires |
Also Published As
Publication number | Publication date |
---|---|
KR20230148698A (en) | 2023-10-25 |
KR102654365B1 (en) | 2024-04-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2017138762A1 (en) | Substrate structure for micro led display and display device using same | |
WO2016056727A1 (en) | Light emitting device package and method of fabricating the same | |
CN204271086U (en) | A kind of display screen body taking out structure containing light | |
WO2016032160A1 (en) | Display panel and method for manufacturing same | |
CN106098742A (en) | Organic light-emitting display device and manufacture method | |
WO2017071344A1 (en) | Color film substrate, display panel and display device | |
WO2015158049A1 (en) | Display apparatus and manufacturing method therefor | |
WO2017105099A2 (en) | Color filter | |
JP2012226931A (en) | Display device | |
WO2021004088A1 (en) | Pixel arrangement structure, display panel, and display device | |
WO2015062283A1 (en) | Led patterning substrate having primary and secondary patterns, and led chip | |
US8872415B2 (en) | Substrate, display panel, and display apparatus | |
CN108123055A (en) | light emitting device | |
TW202204940A (en) | Display device | |
WO2016105018A1 (en) | Method for manufacturing light extraction substrate for organic light-emitting element, light extraction substrate for organic light-emitting element, and organic light-emitting element comprising same | |
JP2012221686A (en) | Display device | |
CN110707146A (en) | Cover plate, organic light-emitting display panel and display device | |
WO2023204527A1 (en) | Light emitting element and manufacturing method thereof | |
WO2016047970A2 (en) | Light extraction substrate for organic light emitting element and organic light emitting element comprising same | |
WO2017160031A1 (en) | Plasmonic color filter with high color reproducibility | |
WO2019231197A1 (en) | Method for manufacturing color conversion structure for micro-led display | |
WO2019212194A1 (en) | Illumination module and illumination device | |
CN208521938U (en) | A kind of organic light-emitting diode (OLED) display screen | |
CN113097367A (en) | QD-miniLED display panel and preparation method thereof | |
WO2020059993A1 (en) | Back light unit and display device including same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 23792104 Country of ref document: EP Kind code of ref document: A1 |