WO2023197659A1 - Procédé de fabrication de dispositif électroluminescent, dispositif électroluminescent et appareil d'affichage - Google Patents

Procédé de fabrication de dispositif électroluminescent, dispositif électroluminescent et appareil d'affichage Download PDF

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WO2023197659A1
WO2023197659A1 PCT/CN2022/140059 CN2022140059W WO2023197659A1 WO 2023197659 A1 WO2023197659 A1 WO 2023197659A1 CN 2022140059 W CN2022140059 W CN 2022140059W WO 2023197659 A1 WO2023197659 A1 WO 2023197659A1
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treatment
light
layer
emitting device
annealing treatment
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PCT/CN2022/140059
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English (en)
Chinese (zh)
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马兴远
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Tcl科技集团股份有限公司
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Priority claimed from CN202210394651.8A external-priority patent/CN116981311A/zh
Priority claimed from CN202210393991.9A external-priority patent/CN116981310A/zh
Application filed by Tcl科技集团股份有限公司 filed Critical Tcl科技集团股份有限公司
Publication of WO2023197659A1 publication Critical patent/WO2023197659A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers

Definitions

  • the present application relates to the field of optoelectronic technology, and specifically to a method for preparing a light-emitting device, a light-emitting device and a display device.
  • Light-emitting devices include but are not limited to organic light-emitting diodes (OLED) and quantum dot light-emitting diodes (QLED).
  • the light-emitting devices have a "sandwich" structure, which includes an anode, a cathode and a light-emitting layer. Wherein, the anode and the cathode are arranged oppositely, and the luminescent layer is arranged between the anode and the cathode.
  • the light-emitting principle of a light-emitting device is: electrons are injected from the cathode of the device to the light-emitting area, holes are injected from the anode of the device to the light-emitting area, electrons and holes recombine in the light-emitting area to form excitons, and the recombined excitons transition through radiation. Release photons, thereby emitting light.
  • the present application provides a method for preparing a light-emitting device, a light-emitting device and a display device to improve the photoelectric performance and stability of the light-emitting device.
  • this application provides a method for preparing a light-emitting device, which method includes the following steps:
  • the solution located on one side of the prefabricated device is annealed and electrically treated to form an electron transport layer;
  • the prefabricated device when the light-emitting device has a positive structure, includes a bottom electrode and a light-emitting layer arranged in a stack, and the solution is applied to the side of the light-emitting layer away from the bottom electrode, and the bottom electrode is anode;
  • the prefabricated device includes a bottom electrode, the solution is applied to one side of the bottom electrode, and the bottom electrode is a cathode.
  • the time period of the annealing treatment at least partially overlaps the time period of the electrical treatment
  • the annealing treatment method and the electrical treatment method are any of the following:
  • the annealing treatment is intermittent, and the electrical treatment is intermittent.
  • the time period of the annealing treatment does not overlap with the time period of the electrical treatment
  • the annealing treatment method and the electrical treatment method are any of the following:
  • the temperature of the annealing treatment is 80°C to 250°C;
  • the time of the annealing treatment is 5 min to 120 min.
  • the electrical treatment is a charging treatment, and the charging treatment is to make the electron transport precursor layer carry positive charge or negative charge, or to make the electron transport precursor layer carry positive charge and negative charge alternately.
  • the charging process includes the steps of: providing an external power supply, a first end of the external power supply is connected to the bottom electrode, and a second end of the external power supply is grounded; turning on the external power supply so that the There is a potential difference between the first end and the second end.
  • the external power supply applies a constant voltage or an alternating voltage to the electron transport precursor layer
  • the voltage value of the constant voltage is 10V to 30V;
  • the frequency of the AC voltage is 10Hz to 200Hz, and the effective voltage is 10V to 30V.
  • the charging treatment time is 5 min to 120 min;
  • the charging treatment is continuous; or, the charging treatment is intermittent, the time of a single charging treatment is 5 min to 20 min, and the interval between adjacent charging treatments is 5 min to 20 min.
  • the overlap time of the annealing process and the charging process is any of the following situations:
  • the annealing treatment is intermittent and the charging treatment is continuous, the interval between adjacent annealing treatments is 5 min to 10 min, and the time for a single annealing treatment is 10 min to 30 min. , the overlap time of the annealing treatment and the charging treatment is 5min to 115min;
  • the annealing treatment is intermittent and the charging treatment is intermittent
  • the interval between adjacent annealing treatments is 5 min to 10 min
  • the time for a single annealing treatment is 10 min to 30 min.
  • the overlap time of the annealing treatment and the charging treatment is 5min to 115min.
  • the electrical treatment is an electrification treatment
  • the electrification treatment is to connect the solution between the cathode and the anode of an external power supply to form a closed loop.
  • the electrification process includes the steps of: fixing the prefabricated device containing the solution on a fixture, and then connecting the anode and cathode of an external power supply to opposite sides of the wet film formed by the solution. connected.
  • the energization treatment is a constant current energization treatment, a constant voltage energization treatment or an alternating energization treatment;
  • the current density of the solution located on one side of the prefabricated device is 100 mA/cm 2 to 300 mA/cm 2 .
  • the time period of the annealing process and the time period of the electrification process at least partially overlap, and the processing time of the annealing process and the electrification process is any one of the following situations:
  • the annealing treatment is intermittent, and when the energization treatment is intermittent, the interval between adjacent annealing treatments is 5 min to 20 min, and the time for a single annealing treatment is 5 min to 20 min; The interval time between adjacent energization treatments is 5 min to 20 min, and the time of a single energization treatment is 5 min to 20 min.
  • the total time of the energization treatment is 5 min to 120 min, and the total overlap time of the annealing treatment and the energization treatment is 5 min to 120 min.
  • the annealing treatment and the electrification treatment are performed alternately;
  • the total time of the annealing treatment is 5min to 60min, and the total time of the energization treatment is 5min to 60min; the time of a single energization treatment is 5min to 20min, and the time of a single annealing treatment is 5min to 20min.
  • the preparation method further includes the step of: after forming an electron transport layer on the side of the prefabricated device, moving the electron transport layer away from the light-emitting layer One side forms the cathode;
  • the preparation method further includes the following steps:
  • An anode is formed on a side of the light-emitting layer away from the electron transport layer.
  • the preparation method further includes the step of: forming a hole functional layer between the anode and the light-emitting layer, the hole functional layer including one of a hole injection layer and a hole transport layer, or Various, when the hole functional layer includes a hole transport layer and a hole injection layer arranged in a stack, the hole transport layer is close to the light-emitting layer, and the hole injection layer is close to the anode;
  • the material of the hole transport layer is selected from NiO, WO 3 , MoO 3 , CuO, poly(9,9-dioctylfluorene-CO-N-(4-butylphenyl)diphenylamine), 3-hexyl Substituted polythiophene, poly(9-vinylcarbazole), poly[bis(4-phenyl)(4-butylphenyl)amine], poly(N,N'-bis(4-butylphenyl)- N,N'-diphenyl-1,4-phenylenediamine-CO-9,9-dioctylfluorene), 4,4',4′′-tris(carbazol-9-yl)triphenylamine, 4 ,4'-bis(9-carbazole)biphenyl, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'
  • the material of the hole injection layer is selected from poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid), copper phthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethylp-benzoquinone, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene,
  • One or more transition metal oxides and transition metal chalcogenide compounds the transition metal oxide is selected from one or more NiO x , MoO x , WO x and CrO x , the transition metal sulfur
  • the system compound is selected from one or more of MoS x , MoS x , WS x , WSe x and CuS.
  • the present application provides a light-emitting device.
  • the preparation method of the light-emitting device includes the following steps:
  • the prefabricated device when the light-emitting device has a positive structure, includes a bottom electrode and a light-emitting layer arranged in a stack, and the solution is applied to the side of the light-emitting layer away from the bottom electrode, and the bottom electrode is anode;
  • the prefabricated device includes a bottom electrode, the solution is applied to one side of the bottom electrode, and the bottom electrode is a cathode.
  • the material of the light-emitting layer is an organic light-emitting material or quantum dots
  • the organic light-emitting material is selected from one of diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPA fluorescent materials, TBRb fluorescent materials and DBP fluorescent materials, or variety;
  • the quantum dots are selected from one or more of single component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots; when the quantum dots are selected from In the case of single-component quantum dots or core-shell structure quantum dots, the material of the single-component quantum dot, the material of the core of the core-shell structure quantum dot, and the material of the shell of the core-shell structure quantum dot are selected independently of each other.
  • Group II-VI compounds Group III-V compounds, Group IV-VI compounds and Group I-III-VI compounds
  • the Group II-VI compound is selected from CdS, CdSe, CdTe , ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe ,HgZnTe , one or more of CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, CdHg
  • the materials of the anode and the cathode are independently selected from one or more of metals, carbon materials and metal oxides, wherein the metal is selected from Al, Ag, Cu, Mo, Au, Ba, Ca and one or more of Mg; the carbon material is selected from one or more of graphite, carbon nanotubes, graphene and carbon fiber; the metal oxide is selected from indium tin oxide, fluorine-doped tin oxide , one or more of tin antimony oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, and magnesium-doped zinc oxide.
  • the present application provides a display device.
  • the display device includes a light-emitting device.
  • the preparation method of the light-emitting device includes the following steps:
  • the prefabricated device when the light-emitting device has a positive structure, includes a bottom electrode and a light-emitting layer arranged in a stack, and the solution is applied to the side of the light-emitting layer away from the bottom electrode, and the bottom electrode is anode;
  • the prefabricated device includes a bottom electrode, the solution is applied to one side of the bottom electrode, and the bottom electrode is a cathode.
  • the electrical treatment is any of the following:
  • the electrical treatment is a charging treatment, which causes the electron transport precursor layer to carry positive charges or negative charges, or causes the electron transport precursor layer to alternately carry positive charges and negative charges;
  • the electrical treatment is an electrification treatment, in which the solution is connected between the cathode and the anode of an external power supply to form a closed loop.
  • Figure 1 is a schematic flow chart of a method for preparing a light-emitting device provided by the present application
  • Figure 2 is a schematic flow chart of a method for manufacturing a light-emitting device according to some embodiments of the present application
  • Figure 3 is a schematic flow chart of another method for preparing a light-emitting device according to some embodiments of the present application.
  • FIG. 4 is a schematic structural diagram of a first light-emitting device provided by an embodiment of the present application.
  • FIG. 5 is a schematic structural diagram of a second light-emitting device provided by an embodiment of the present application.
  • FIG. 6 is a schematic structural diagram of a third light-emitting device provided by an embodiment of the present application.
  • Embodiments of the present application provide a method for preparing a light-emitting device, a light-emitting device and a display device. Each is explained in detail below. It should be noted that the order of description of the following embodiments does not limit the preferred order of the embodiments.
  • the term "and/or” is used to describe the association relationship of associated objects, indicating that there can be three relationships.
  • a and/or B can represent three situations: the first situation is that A alone exists ; The second case is when A and B exist at the same time; the third case is when B exists alone, where A and B can be singular or plural respectively.
  • the term "at least one” refers to one or more, and "a plurality” refers to two or more than two.
  • the terms “at least one” and “any one of the following situations” refer to any combination of these species, including any combination of a single species or a plurality of species.
  • "at least one (number) of a, b or c” or “at least one (number) of a, b and c” can be expressed as: a, b, c, a-b (i.e. a and b ), a-c, b-c or a-b-c, where a, b and c can be a single species (number) or multiple species (number) respectively.
  • an electron transport layer is usually provided between the cathode and the light-emitting layer.
  • Metal oxide nanoparticles are one of the materials used to prepare the electron transport layer.
  • Nano-metal oxides have the characteristics of high electron mobility and wide bandgap.
  • defect states on the surface of nano-metal oxides which makes the stability of nano-metal oxides not ideal, and the external environmental conditions have a negative impact on nano-metal oxidation.
  • the defect density and conductive properties of the object have a great impact, which leads to large fluctuations in the performance of the electron transport layer, which in turn adversely affects the photoelectric performance and working life of the light-emitting device. Therefore, how to improve the performance stability of electron transport layers containing nanometal oxides is of great significance to the application and development of light-emitting devices.
  • the embodiment of the present application provides a method for preparing a light-emitting device, as shown in Figure 1.
  • the preparation method includes the following steps:
  • the prefabricated device when the light-emitting device has a positive structure, includes a bottom electrode and a light-emitting layer arranged in a stack, and the solution is applied to the side of the light-emitting layer away from the bottom electrode, and the bottom electrode is anode;
  • the prefabricated device includes a bottom electrode, the solution is applied to one side of the bottom electrode, and the bottom electrode is a cathode.
  • the time period of the annealing treatment and the time period of the electrical treatment at least partially overlap, and the annealing treatment method and the electrical treatment method are any of the following situations:
  • the annealing treatment is intermittent, and the electrical treatment is intermittent.
  • the time period of the annealing treatment and the time period of the electrical treatment do not overlap, and the annealing treatment method and the electrical treatment method are any of the following situations:
  • a method for preparing a light-emitting device includes the following steps:
  • annealing treatment includes all steps that can enable the solution located on one side of the prefabricated device to obtain higher energy and remove at least part of the solvent, including but not limited to isothermal heat treatment Process or non-isothermal heat treatment (for example, temperature changes in a gradient) process.
  • annealing treatment refers to constant temperature heat treatment at 80°C to 250°C for 5 minutes to 120 minutes.
  • the temperature of the annealing treatment can be, for example, Is 80°C to 100°C, 100°C to 120°C, 120°C to 140°C, 140°C to 160°C, 160°C to 180°C, 180°C to 200°C, 200°C to 220°C, 220°C to 240°C, or 240°C to 250°C
  • the annealing treatment time can be, for example, 5min to 10min, 10min to 20min, 20min to 30min, 30min to 40min, 40min to 50min, 50min to 60min, 60min to 70min, 70min to 80min, 80min to 90min, 90min to 100min, 100min to 110min, or 110min to 120min.
  • the solution located on one side of the prefabricated device can form a film layer in a wet film state or a dry film state after annealing treatment.
  • “energization treatment” is to connect a solution containing nanometal oxides between the cathode and anode of an external power supply to form a closed loop.
  • the solution is equivalent to the resistance in the closed loop.
  • the embodiments of this application are for external
  • the type and model of the power supply are not specifically limited, and can be selected according to the scale of different light-emitting devices. It should be noted that the solution can only be connected between the cathode and the anode of the external power supply, or the prefabricated device including the solution can be connected between the cathode and the anode of the external power supply.
  • the "power treatment” includes the steps of: fixing the prefabricated device including the solution on a fixture, and then placing the anode and cathode of the external power supply opposite to the wet film formed by the solution. The two sides of the setting are connected.
  • the temperature of the heat treatment should not be too high to avoid Causes damage to the light-emitting layer and other functional layers, so the nanometal oxide cannot be completely annealed, resulting in the inability to fully remove the ligands located on the surface of the nanometal oxide, thus failing to effectively shorten the gap between adjacent nanoparticles. Therefore, in the formed film layer, the nanocrystal array formed by the nanometal oxide has the characteristics of loose arrangement, and the film layer has the problem of low density.
  • the gap between adjacent nanoparticles forms a potential barrier for electronic conduction, and the nanometal oxide itself has a large specific surface area and relatively active properties, resulting in poor conductivity of the film layer made of nanometal oxide. ideal and less stable.
  • the technical means of "annealing and electrifying the solution within a preset time range" is adopted to promote film formation of the solution under the action of electric energy and high temperature.
  • the electron transport layer (the material of the electron transport layer is nanometer metal oxide) of the light-emitting device in this application is more dense, that is, adjacent nanometer The gaps between particles are smaller, making the electron transport layer more conductive and stable, so that the overall performance of the light-emitting device in this application is better.
  • the annealing treatment and the electrification treatment are carried out in an inert gas atmosphere.
  • "Inert gas” refers to a gas that is chemically inactive, does not react with the electron transport precursor layer and other functional layers, and has the characteristics of isolating oxygen and water.
  • Gas-like, inert gas for example, is selected from at least one of nitrogen, helium, neon, argon, krypton or xenon.
  • the application method of the solution containing nanometal oxides includes but is not limited to spin coating, coating, inkjet printing, blade coating, dipping and pulling, soaking, spraying, roller coating or casting. at least one of them.
  • the prefabricated device includes a stacked anode and a light-emitting layer, and the solution is applied to the side of the light-emitting layer away from the anode.
  • the prefabricated device consists of a substrate, an anode, and anode that are stacked in sequence. and a light-emitting layer.
  • the prefabricated device consists of a substrate, anode, a hole functional layer and a light-emitting layer that are stacked in sequence; when the light-emitting device has an inverted structure, the prefabricated device includes a cathode, and the solution is applied to the cathode.
  • a prefabricated device consists of a substrate and a cathode arranged in a stack, and the solution is applied to the side of the cathode away from the substrate.
  • the nanometal oxide may be an undoped nanometal oxide or a doped nanometal oxide.
  • the nanometal oxide is selected from ZnO, TiO 2 , SnO 2 , BaO, Ta 2 O 3 , ZrO 2 , TiLiO, ZnGaO, ZnAlO, ZnMgO, ZnSnO, ZnLiO, InSnO, AlZnO, ZnOCl Or at least one of ZnOF.
  • the average particle size of the nanometal oxide can be, for example, 2nm to 15nm.
  • the average particle size of the nanometal oxide can be, for example, 2nm to 4nm, 2nm to 6nm, 2nm to 8nm, 2nm to 10nm, 4nm to 10nm, or 10nm to 15nm.
  • the average particle size of the nanometal oxide may be, for example, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, or 10 nm.
  • the solution containing nanometal oxides can be, for example, a product containing nanometal oxides prepared by a solution method, wherein the solvents include but are not limited to water, ethanol, propanol, butanol, hexanol, n-octane, At least one of n-hexane or ethylene glycol monomethyl ether.
  • the "preset time range” refers to the time range set by the operator. This time range can be obtained by repeated experiments multiple times, and the time range will be different depending on the type of the light-emitting device. In some embodiments of the present application, the “preset time range” refers to 5 minutes to 120 minutes.
  • the electrification treatment is a constant current electrification treatment, a constant voltage electrification treatment or an alternating electrification treatment; during the electrification treatment, the current density of the solution located on one side of the prefabricated device It is 100mA/cm 2 to 300mA/cm 2 , for example, it can be 100mA/cm 2 to 150mA/cm 2 , 150mA/cm 2 to 200mA/cm 2 , 200mA/cm 2 to 250mA/cm 2 , or 250mA/cm 2 to 300mA/cm 2 .
  • the time period of the annealing process and the time period of the power-on process at least partially overlap.
  • the annealing process is continuous, and the energization process is continuous. It can be understood that the time period of the annealing process and the time period of the energization process may only partially overlap or may completely overlap.
  • the annealing process is continuous, and the power-on process is intermittent.
  • the interval time between adjacent energization treatments can be 5min to 10min, and the time of a single energization treatment can be 10min to 15min.
  • the interval time between adjacent energization treatments can be, for example, 5min to 6min, 6min to 7min, 7min to 8min, 8min to 9min. , or 9min to 10min.
  • the time of a single power-on treatment may be, for example, 10min to 11min, 11min to 12min, 12min to 13min, 13min to 14min, or 14min to 15min.
  • the annealing process is intermittent, and the energization process is continuous.
  • the interval time of adjacent annealing treatments is 5min to 10min
  • the time of a single annealing treatment is 10min to 30min.
  • the interval time of adjacent annealing treatments can be, for example, 5min to 6min, 6min to 7min, 7min to 8min, 8min to 9min, or 9min to 10min.
  • the time of a single annealing treatment may be, for example, 10min to 15min, 15min to 20min, 20min to 25min, or 25min to 30min.
  • the annealing treatment is intermittent, and the power-on treatment is intermittent.
  • the interval time between adjacent annealing treatments is 5 min to 20 min, and the time of a single annealing treatment is 5 min to 20 min;
  • the interval time of power treatment is 5min to 20min, and the time of single power treatment is 5min to 20min.
  • the total time of the annealing process is 5min to 120min
  • the total time of the energization process is 5min to 120min
  • the total overlap time of the annealing process and the energization process is 5min to 120min.
  • the total time of the annealing treatment can be, for example, 5min to 10min, 10min to 20min, 20min to 30min, 30min to 40min, 40min to 50min, 50min to 60min, 60min to 70min, 70min to 80min, 80min to 90min, 90min to 100min, 100min to 110min, or 110min to 120min
  • the total time of the energization treatment can be, for example, 5min to 10min, 10min to 20min, 20min to 30min, 30min to 40min, 40min to 50min, 50min to 60min, 60min to 70min, 70min to 80min, 80min to 90min , 90min to 100min, 100min to 110min, or 110min to 120min.
  • the total overlap time of the annealing treatment and the energization treatment can be, for example, 5min to 10min, 10min to 20min, 20min to 30min, 30min to 40min, 40min to 50min, 50min to 60min, 60min to 70min, 70min to 80min, 80min to 90min, 90min to 100min, 100min to 110min, or 110min to 120min.
  • the annealing process is alternated with the energization process.
  • the total time of the annealing treatment is 5min to 60min
  • the total time of the energization treatment is 5min to 60min.
  • the total time of the annealing treatment is, for example, 5min to 10min, 10min to 20min, 20min to 30min, 30min to 40min, 40min to 50min, Or 50min to 60min.
  • the total time of the energization treatment is, for example, 5min to 10min, 10min to 20min, 20min to 30min, 30min to 40min, 40min to 50min, or 50min to 60min.
  • the time of a single energization treatment is 5min to 20min
  • the time of a single annealing treatment is 5min to 20min
  • the time of a single energization treatment is, for example, 5min to 8min, 8min to 10min, 10min to 15min, or 15min to 20min
  • the time of a single annealing treatment is, for example, 5 min to 8 min, 8 min to 10 min, 10 min to 15 min, or 15 min to 20 min.
  • the preparation method when the light-emitting device has an upright structure, the preparation method further includes the step of: after forming an electron transport layer on the side of the prefabricated device, preparing a side of the electron transport layer away from the light-emitting layer. form the cathode.
  • the prefabricated device when the light-emitting device has a positive structure, the prefabricated device can be a stacked structure including an anode, a hole functional layer and a light-emitting layer. Therefore, the preparation method further includes the step of: providing an anode, one side of the anode.
  • the hole functional layer and the light-emitting layer are sequentially prepared on the side, wherein the hole functional layer includes a hole transport layer and/or a hole injection layer.
  • the hole functional layer includes a hole transport layer and a hole injection layer
  • the hole injection layer The layer is close to the anode, and the hole transport layer is close to the light-emitting layer.
  • the preparation method further includes the following steps:
  • the preparation method further includes the following steps:
  • a light-emitting layer is formed on the side of the electron transport layer away from the cathode.
  • An anode is prepared on the side of the light-emitting layer away from the electron transport layer.
  • the preparation method further includes the steps of: forming a hole function layer between the anode and the light-emitting layer, the hole function layer including a hole injection layer and/or a hole transport layer,
  • the hole function layer includes a hole transport layer and a hole injection layer arranged in a stack
  • the hole transport layer is close to the light-emitting layer
  • the hole injection layer is close to the anode.
  • forming the hole functional layer between the anode and the light-emitting layer means first preparing and forming the hole functional layer on the side of the light-emitting layer away from the electron transport layer, and then forming the hole functional layer on the side far from the light-emitting layer.
  • An anode is prepared and formed; in addition, when the hole functional layer includes a hole injection layer and a hole transport layer, a hole transport layer, a hole injection layer and a light-emitting layer are sequentially prepared on the side of the light-emitting layer away from the electron transport layer.
  • the preparation method includes the following steps:
  • a method for preparing a light-emitting device includes the following steps:
  • the electron transport precursor layer can be in a wet film state, and the electron transport precursor layer can also be in a dry film state.
  • the electron transport precursor layer can be a solution containing nanometal oxides applied to the prefabricated device.
  • the wet film formed on one side of the prefabricated device the electron transport precursor layer may be a dry film layer obtained by drying the wet film formed by applying a solution containing nanometal oxides to one side of the prefabricated device.
  • the preparation method may also include other processing steps, for example: when the electron transport precursor layer is a wet film, the electron transport precursor layer is subjected to a charging process. Afterwards, the preparation method may further include a drying process to obtain the electron transport layer in a dry film state.
  • the electron transport precursor layer is prepared from a solution containing nanometal oxides. If the electron transport precursor layer is only dried to form the electron transport layer, the temperature of the drying process should not be too high to avoid damage to the light-emitting layer and other functional layers. Causes damage, therefore, the ligands located on the surface of the nanometal oxide cannot be sufficiently removed, so that the gap between adjacent nanoparticles cannot be effectively shortened, so that in the formed electron transport layer, the nanocrystals formed by the nanometal oxide The array has the characteristics of loose arrangement, which leads to the problem of low density of the electron transport layer.
  • the gap between adjacent nanoparticles forms a potential barrier for electron conduction, and the nanometal oxide itself has a large specific surface area and relatively active properties, resulting in unsatisfactory conductivity of the electron transport layer made of nanometal oxide. , and the stability is poor.
  • the technical means of "charging the electron transport precursor layer” is used to cause the ligands connected to the surface of the nanometal oxide to fall off under the action of electrical energy and high temperature, thereby shortening the adjacent
  • the gaps between nanoparticles can thereby improve the crystallinity, conductivity and stability of the electron transport layer, which is beneficial to improving the photoelectric performance and working life of the light-emitting device.
  • the application method of the solution containing nanometal oxides includes but is not limited to spin coating, coating, inkjet printing, blade coating, dipping and pulling, soaking, spraying, roller coating or casting. at least one of them.
  • the prefabricated device includes a stacked bottom electrode and a light-emitting layer.
  • the electron transport precursor layer is formed on the side of the light-emitting layer away from the bottom electrode.
  • the bottom electrode is an anode.
  • the prefabricated device is composed of a stacked bottom electrode and a light-emitting layer. It consists of a substrate, anode and a light-emitting layer.
  • a prefabricated device consists of a substrate, anode, a hole functional layer and a light-emitting layer that are stacked in sequence; when the light-emitting device has an inverted structure, the prefabricated device includes a bottom electrode for electron transmission.
  • the precursor layer is formed on one side of the bottom electrode, which is the cathode.
  • a prefabricated device consists of a stacked substrate and a cathode, and the electron transport precursor layer is formed on the side of the cathode away from the substrate.
  • the nanometal oxide may be an undoped nanometal oxide or a doped nanometal oxide.
  • the nanometal oxide is selected from ZnO, TiO 2 , SnO 2 , BaO, Ta 2 O 3 , ZrO 2 , TiLiO, ZnGaO, ZnAlO, ZnMgO, ZnSnO, ZnLiO, InSnO, AlZnO, ZnOCl Or at least one of ZnOF.
  • the average particle size of the nanometal oxide can be, for example, 2nm to 15nm.
  • the average particle size of the nanometal oxide can be, for example, 2nm to 4nm, 2nm to 6nm, 2nm to 8nm, 2nm to 10nm, 4nm to 10nm, or 10nm to 15nm.
  • the average particle size of the nanometal oxide may be, for example, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, or 10 nm.
  • the solution containing nanometal oxides can be, for example, a product containing nanometal oxides prepared by a solution method, wherein the solvents include but are not limited to water, ethanol, propanol, butanol, hexanol, n-octane, At least one of n-hexane or ethylene glycol monomethyl ether.
  • the charging process is performed within a preset time range.
  • the “preset time range” refers to the time range set by the operator. This time range can be obtained by repeated experiments multiple times, and the light emitting This time range will vary depending on the type of device.
  • the time of the charging treatment is 5min to 120min.
  • the time of the charging treatment can be, for example, 5min to 10min, 10min to 20min, 20min to 30min, 30min to 40min, 40min to 50min, 50min to 60min, 60min. to 70min, 70min to 80min, 80min to 90min, 90min to 100min, 100min to 110min, or 110min to 120min.
  • the charging treatment can be continuous, or the charging treatment can be intermittent.
  • the charging treatment is intermittent, the time of a single charging treatment is 5min to 20min, the interval time between adjacent charging treatments is 5min to 20min, and the time of a single charging treatment is 5min to 20min.
  • the treatment time can be, for example, 5min to 8min, 8min to 10min, 10min to 15min, or 15min to 20min, and the interval time between adjacent charging treatments can be, for example, 5min to 8min, 8min to 10min, 10min to 12min, 12min to 15min, or 15min to 20min.
  • charging treatment includes all processes that can make the electron transport precursor layer carry positive or negative charges, or make the electron transport precursor layer alternately carry positive charges and negative charges. It can be understood that , the charging treatment can make only the electron transport precursor layer carry a charge, it can also make the entire prefabricated device containing the electron transport precursor layer carry a charge, or it can make some layers (including the electron transport precursor layer) in the prefabricated device containing the electron transport precursor layer carry a charge. Carry charge.
  • the charging process includes the steps of: providing an external power supply, the first end of the external power supply is connected to the bottom electrode, and the second end of the external power supply is connected to ground, turning on the external power supply, connecting the first end to the second section There is a potential difference between them, so that the entire prefabricated device including the electron transport precursor layer carries positive or negative charges, or the entire prefabricated device including the electron transport precursor layer alternately carries positive charges and negative charges.
  • the embodiment of the present application does not specifically limit the type and model of the external power supply, and it can be selected according to the scale of different light-emitting devices.
  • the "charged treatment” includes the steps of: fixing the prefabricated device containing the electron transport precursor layer on the fixture, and then connecting the first end of the external power supply to the bottom electrode located on one side of the prefabricated device, And connect the second terminal of the external power supply to the ground, turn on the external power supply, and there will be a potential difference between the first terminal and the second terminal.
  • an external power supply applies a constant voltage or an alternating voltage to the electron transport precursor layer.
  • the first terminal can be the positive electrode and the second terminal can be the negative electrode, so that the entire prefabricated device including the electron transport precursor layer carries a positive charge; or the first electrode can be the negative electrode,
  • the second electrode is a positive electrode, so that the entire prefabricated device including the electron transport precursor layer carries a negative charge.
  • an external power supply applies an AC voltage to the electron transport precursor layer, the entire prefabricated device including the electron transport precursor layer alternately carries positive and negative charges.
  • the voltage value of the constant voltage is 10V to 30V.
  • the voltage value of the constant voltage is, for example, 10V to 15V, 15V to 20V, 20V to 25V, or 25V to 30V.
  • “voltage value” only refers to the specific magnitude of the voltage, but does not indicate the direction of the voltage. It can be understood that, under the premise that the charging treatment time is constant, the constant voltage value that is too high or too low will have limited effect on improving the overall performance of the light-emitting device. If the voltage value is too low, it will have a negative effect on the surface of the nanometal oxide.
  • the ligand removal effect is limited, so the gap between adjacent nanoparticles is limited, and the improvement effect on the conductivity and stability of the electron transport layer is limited; if the voltage value is too high, it may affect the organic functional layer and/or luminescence. layer causing some degree of damage.
  • the frequency of the AC voltage is 10Hz to 200Hz
  • the effective voltage value is 10V to 30V
  • the frequency of the AC voltage is, for example, 10Hz to 30Hz, 30Hz to 50Hz, 50Hz. to 80Hz, 80Hz to 100Hz, 100Hz to 120Hz, 120Hz to 150Hz, 150Hz to 180Hz, or 180Hz to 200Hz
  • the effective voltage value is, for example, 10V to 15V, 15V to 20V, 20V to 25V, or 25V to 30V.
  • the electron transport precursor layer is a wet film
  • the preparation method further includes the step of: annealing the electron transport precursor layer.
  • Annealing treatment includes all processes that can enable the electron transport precursor layer in the wet film state to obtain higher energy and remove at least part of the solvent, including but not limited to isothermal heat treatment processes or non-isothermal heat treatments (such as temperature gradient changes) Process, in some embodiments of the present application, “annealing treatment” refers to constant temperature heat treatment at 80°C to 250°C for 5 minutes to 120 minutes.
  • the temperature of the annealing treatment can be, for example, 80°C to 100°C, 100°C to 120°C, 120°C °C to 140 °C, 140 °C to 160 °C, 160 °C to 180 °C, 180 °C to 200 °C, 200 °C to 220 °C, 220 °C to 240 °C, or 240 °C to 250 °C
  • the annealing treatment time can be, for example, 5 minutes to 10min, 10min to 20min, 20min to 30min, 30min to 40min, 40min to 50min, 50min to 60min, 60min to 70min, 70min to 80min, 80min to 90min, 90min to 100min, 100min to 110min, or 110min to 120min.
  • the annealing treatment is continuous, and the charging treatment is continuous.
  • the overlap time of the annealing treatment and the charging treatment is 5 min to 120 min.
  • the overlap time of the annealing treatment and the charging treatment is, for example, 5 min to 120 min. 10min, 10min to 20min, 20min to 30min, 30min to 40min, 40min to 50min, 50min to 60min, 60min to 70min, 70min to 80min, 80min to 90min, 90min to 100min, 100min to 110min, or 110min to 120min.
  • the time of the annealing treatment is, for example, 5 min to 120 min
  • the temperature of the annealing treatment is, for example, 80°C to 250°C
  • the time of the charging treatment is, for example, 5 min to 120 min.
  • the annealing treatment is continuous, and the charging treatment is intermittent.
  • the overlap time of the annealing treatment and the charging treatment is 5 min to 115 min.
  • the overlap time of the annealing treatment and the charging treatment is, for example, 5 min to 115 min. 10min, 10min to 20min, 20min to 30min, 30min to 40min, 40min to 50min, 50min to 60min, 60min to 70min, 70min to 80min, 80min to 90min, 90min to 100min, 100min to 115min.
  • the time of the annealing treatment is, for example, 5min to 120min
  • the temperature of the annealing treatment is, for example, 80°C to 250°C
  • the time of the charging treatment is, for example, 5min to 120min
  • the time of a single charging treatment is, for example, 5min to 20min
  • the interval between adjacent charging treatments The time is, for example, 5 min to 20 min.
  • the annealing treatment is intermittent, and the charging treatment is continuous.
  • the interval between adjacent annealing treatments is 5 min to 10 min, and the time of a single annealing treatment is 10 min to 30 min.
  • the overlap time with the charging treatment is 5 min to 115 min, and the temperature of the annealing treatment is, for example, 80°C to 250°C.
  • the interval time of the annealing treatment is, for example, 5min to 6min, 6min to 7min, 7min to 8min, 8min to 9min, or 9min to 10min.
  • the time of a single annealing treatment is, for example, 10min to 15min, 15min to 20min, 20min to 25min, or 25min.
  • the overlap time of annealing treatment and charging treatment is, for example, 5min to 10min, 10min to 20min, 20min to 30min, 30min to 40min, 40min to 50min, 50min to 60min, 60min to 70min, 70min to 80min, 80min to 90min, 90min to 100min, 100min to 115min.
  • the charging treatment time is, for example, 5 min to 120 min.
  • the annealing treatment is intermittent, and the charging treatment is intermittent.
  • the interval between adjacent annealing treatments is 5 min to 10 min, and the time of a single annealing treatment is 10 min to 30 min.
  • the overlap time with the charging treatment is 5 min to 115 min, and the temperature of the annealing treatment is, for example, 80°C to 250°C.
  • the time of the charging treatment is, for example, 5 min to 120 min
  • the time of a single charging treatment is, for example, 5 min to 20 min
  • the interval time between adjacent charging treatments is, for example, 5 min to 20 min.
  • the time period of the annealing process does not overlap with the time period of the charging process.
  • annealing treatment and charging treatment are performed alternately. Both annealing treatment and charging treatment are intermittent.
  • the time of charging treatment is, for example, 5min to 120min.
  • the time of single charging treatment is, for example, 5min to 20min.
  • the time of annealing treatment is, for example, 5min. to 120 min, and the time of a single annealing treatment is, for example, 5 min to 20 min.
  • the charging treatment can be continuous or intermittent. In the same way, the annealing treatment can also be continuous or intermittent.
  • the charging treatment time is, for example, 5 min to 120 min, and the annealing treatment time is, for example, 5 min to 120 min.
  • the annealing treatment and charging treatment are carried out in an inert gas atmosphere.
  • “Inert gas” means that it is chemically inactive, does not react with the electron transport precursor layer and other functional layers, and has the ability to isolate oxygen and water.
  • the inert gas is, for example, at least one selected from nitrogen, helium, neon, argon, krypton or xenon.
  • the preparation method when the light-emitting device has a positive structure, the preparation method further includes the step of forming a top electrode on the side of the electron transport layer away from the light-emitting layer, and the top electrode is a cathode.
  • the prefabricated device when the light-emitting device has a positive structure, the prefabricated device can be a stacked structure including an anode, a hole functional layer and a light-emitting layer. Therefore, the preparation method further includes the step of: providing an anode, one side of the anode.
  • the hole functional layer and the light-emitting layer are sequentially prepared on the side, wherein the hole functional layer includes a hole transport layer and/or a hole injection layer.
  • the hole functional layer includes a hole transport layer and a hole injection layer
  • the hole injection layer The layer is close to the anode, and the hole transport layer is close to the light-emitting layer.
  • the preparation method includes the following steps:
  • S101 Provide a substrate, and prepare and form an anode on one side of the substrate;
  • the preparation method further includes the following steps:
  • a light-emitting layer is formed on a side of the electron transport layer away from the bottom electrode
  • a top electrode is prepared on the side of the light-emitting layer away from the electron transport layer, and the top electrode is the anode.
  • the preparation method further includes the steps of: forming a hole function layer between the anode and the light-emitting layer, the hole function layer including a hole injection layer and/or a hole transport layer,
  • the hole function layer includes a hole transport layer and a hole injection layer arranged in a stack
  • the hole transport layer is close to the light-emitting layer
  • the hole injection layer is close to the anode.
  • forming the hole functional layer between the anode and the light-emitting layer means first preparing and forming the hole functional layer on the side of the light-emitting layer away from the electron transport layer, and then forming the hole functional layer on the side far from the light-emitting layer.
  • An anode is prepared and formed; in addition, when the hole functional layer includes a hole injection layer and a hole transport layer, a hole transport layer, a hole injection layer and a light-emitting layer are sequentially prepared on the side of the light-emitting layer away from the electron transport layer.
  • the preparation method includes the following steps:
  • S101' provide a substrate, prepare and form a cathode on one side of the substrate;
  • the preparation methods of other film layers in the light-emitting device include but are not limited to solution methods and deposition methods.
  • the solution methods include but are not limited to spin coating, Coating, inkjet printing, scraping, dipping, soaking, spraying, roller coating or casting;
  • deposition methods include chemical methods and physical methods.
  • Chemical methods include but are not limited to chemical vapor deposition, continuous ion layer adsorption and reaction method, anodizing method, electrolytic deposition method or co-precipitation method.
  • Physical methods include but are not limited to thermal evaporation coating method, electron beam evaporation coating method, magnetron sputtering method, multi-arc ion coating method, physical vapor deposition method, atomic layer deposition method or pulsed laser deposition method.
  • thermal evaporation coating method electron beam evaporation coating method
  • magnetron sputtering method magnetron sputtering method
  • multi-arc ion coating method physical vapor deposition method
  • atomic layer deposition method or pulsed laser deposition method.
  • the method for preparing a light-emitting device may also include other steps, for example: after each layer of the light-emitting device is prepared, the light-emitting device needs to be packaged.
  • the embodiment of the present application also provides a light-emitting device.
  • the light-emitting device is produced by any one of the above preparation methods.
  • the light-emitting device 1 includes an anode 11, a cathode 12, a light-emitting layer 13 and an electron Transport layer 14, in which the anode 11 and the cathode 12 are arranged oppositely, the luminescent layer 13 is arranged between the anode 11 and the cathode 12, and the electron transport layer 14 is arranged between the cathode 12 and the luminescent layer 13.
  • the light-emitting device includes but is not limited to OLED or QLED, and the light-emitting device may have an upright structure, or the light-emitting device may also have an inverted structure.
  • the electron transport layer of the light-emitting device in the embodiment of the present application is denser, that is, the gap between adjacent nanoparticles is smaller, so that The electron transport layer has higher conductivity and stability, so that the overall performance of the light-emitting device in the embodiment of the present application is better.
  • the materials of the anode 11, the cathode 12 and the light-emitting layer 13 can be common materials in the art, such as:
  • the materials of the anode 11 and the cathode 12 are independently selected from at least one of metals, carbon materials or metal oxides, and the metal is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca or Mg;
  • the carbon material is selected from at least one of graphite, carbon nanotubes, graphene or carbon fiber;
  • the metal oxide can be doped or non-doped metal oxide, for example, selected from indium tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO) or magnesium-doped zinc oxide (MZO) at least one of them.
  • the anode 11 or the cathode 12 can also be selected from a composite electrode with metal sandwiched between doped or non-doped transparent metal oxides.
  • the composite electrode includes but is not limited to AZO/Ag/AZO, AZO/Al/AZO, and ITO/Ag.
  • the thickness of the anode 11 may be, for example, 40 nm to 160 nm, and the thickness of the cathode 12 may be, for example, 20 nm to 120 nm.
  • the material of the light-emitting layer 13 is selected from organic light-emitting materials or quantum dots.
  • the thickness of the light-emitting layer 13 may be, for example, 20 nm to 60 nm.
  • Organic light-emitting materials include, but are not limited to, at least one of diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPA fluorescent materials, TBRb fluorescent materials or DBP fluorescent materials. kind.
  • Quantum dots include, but are not limited to, at least one of red quantum dots, green quantum dots, or blue quantum dots, and quantum dots include, but are not limited to, single-component quantum dots, core-shell structure quantum dots, and inorganic perovskite quantum dots. dots or at least one of organic-inorganic hybrid perovskite quantum dots.
  • the particle size of the quantum dots may be, for example, 5 nm to 10 nm.
  • the material of the single-component quantum dot, the material of the core of the core-shell structure quantum dot, and the material of the shell of the core-shell structure quantum dot are independently selected from each other.
  • Group II-VI compounds At least one of Group II-VI compounds, Group III-V compounds, Group IV-VI compounds or Group I-III-VI compounds, wherein the Group II-VI compounds are selected from the group consisting of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe ,CdZnSeS, At least one of CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSe
  • CdZnSe only means that it is composed of three elements: Cd, Zn and Se. If it means the content of each element, it corresponds to Cd x Zn 1-x Se, 0 ⁇ x ⁇ 1.
  • inorganic perovskite quantum dots the general structural formula of inorganic perovskite quantum dots is AMX 3 , where A is Cs + ion, M is a divalent metal cation, and M includes but is not limited to Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - , Br - or I - .
  • organic-inorganic hybrid perovskite quantum dots the general structural formula of organic-inorganic hybrid perovskite quantum dots is BMX 3 , where B is an organic amine cation, including but not limited to CH 3 (CH 2 ) n - 2NH 3+ (n ⁇ 2) or NH 3 (CH 2 ) n NH 3 2+ (n ⁇ 2), M is a divalent metal cation, M includes but is not limited to Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - , Br - or I - .
  • the material of the light-emitting layer when the material of the light-emitting layer includes quantum dots, the material of the light-emitting layer also includes ligands connected to the surface of the quantum dots.
  • the ligands include but are not limited to amine ligands, carboxylic acid ligands, and thiols.
  • At least one of the thiol ligands is selected from ethyl mercaptan, propyl mercaptan, mercaptoethanol, benzene mercaptan, octyl mercaptan, octadecyl mercaptan, dodecyl mercaptan
  • the light-emitting device 1 further includes a hole function layer 15 , and the hole function layer 15 is disposed between the anode 11 and the light-emitting layer 13 between.
  • the hole function layer 15 includes a hole injection layer and/or a hole transport layer.
  • the hole function layer includes a hole transport layer and a hole injection layer arranged in a stack, the hole transport layer is close to the light-emitting layer, and the hole injection layer close to the anode.
  • the thickness of the hole function layer 15 may be, for example, 20 nm to 100 nm.
  • the material of the hole transport layer includes but is not limited to poly(9,9-dioctylfluorene-CO-N-(4-butylphenyl)diphenylamine) (TFB for short, CAS number: 220797-16-0 ), 3-hexyl substituted polythiophene (CAS number: 104934-50-1), poly(9-vinylcarbazole) (abbreviated as PVK, CAS number: 25067-59-8), poly[bis(4-phenyl) )(4-butylphenyl)amine] (referred to as Poly-TPD, CAS number is 472960-35-3), poly(N,N'-di(4-butylphenyl)-N,N'- Diphenyl-1,4-phenylenediamine-CO-9,9-dioctylfluorene) (referred to as PFB, CAS number is 223569-28-6), 4,4',4"-tris(carbazole)
  • the materials of the hole injection layer include but are not limited to poly(3,4-ethylenedioxythiophene): poly(styrenesulfonic acid) (CAS number: 155090-83-8), copper phthalocyanine (referred to as CuPc, CAS number is 147-14-8), 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone (referred to as F4-TCNQ, CAS number is 29261 -33-4), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene (referred to as HATCN,
  • transition metal oxides or transition metal chalcogenide compounds wherein the transition metal oxide can be at least one of NiO x , MoO x , WO x or CrO x
  • the metal chalcogenide compound may be at least one of MoS x , MoS x , WS x , WSe x or CuS.
  • the light-emitting device may also include other layer structures.
  • the light-emitting device may also include an electron injection layer.
  • the electron injection layer is disposed between the electron transport layer and the cathode.
  • the material of the electron injection layer includes but is not limited to alkali metal halide.
  • the alkali metal halide includes but is not limited to LiF.
  • the alkali metal organic complex includes but is not limited to lithium 8-hydroxyquinolate.
  • the organic phosphine compound Including but not limited to at least one of organic phosphorus oxides, organic thiophosphine compounds or organic selenophosphine compounds.
  • Embodiments of the present application also provide a display device.
  • the display device includes a light-emitting device produced by any one of the preparation methods described in the embodiments of this application, or a light-emitting device described in any one of the embodiments of this application.
  • the display device can be any electronic product with a display function, including but not limited to smart phones, tablet computers, laptops, digital cameras, digital camcorders, smart wearable devices, smart electronic weighing scales, vehicle monitors, televisions machine or e-book reader, wherein the smart wearable device can be, for example, a smart bracelet, a smart watch, a virtual reality (Virtual Reality, VR) helmet, etc.
  • VR Virtual Reality
  • This embodiment provides a method for preparing a light-emitting device and the prepared light-emitting device.
  • the preparation method includes the following steps:
  • step S1.2 In an atmospheric environment at normal temperature and pressure, spin-coat the PEDOT:PSS aqueous solution on the side of the anode away from the glass substrate in step S1.1, and then place it for constant temperature heat treatment at 150°C for 15 minutes to obtain an air layer with a thickness of 20nm. hole injection layer;
  • step S1.3 In a nitrogen environment at normal temperature and pressure, spin-coat the TFB-chlorobenzene solution on the side of the hole injection layer away from the anode in step S1.2, and then place it for constant temperature heat treatment at 150°C for 30 minutes to obtain a thickness of 30nm. hole transport layer;
  • step S1.4 In a nitrogen environment at normal temperature and pressure, spin-coat CdZnSe/CdZnS/ZnS quantum dots-n-octane with a concentration of 10 mg/mL on the side of the hole transport layer away from the hole injection layer in step S1.3. The solution is then placed in a constant temperature heat treatment at 100°C for 5 minutes to obtain a luminescent layer with a thickness of 20nm;
  • step S1.5 In a nitrogen environment at normal temperature and pressure, spin-coat a nano-ZnO (particle size: 5 nm)-ethanol solution with a concentration of 30 mg/mL on the side of the light-emitting layer away from the hole transport layer in step S1.4 to obtain Wet film, use a clamp to fix the prefabricated device containing the wet film, connect the anode of the external power supply to the first side (left side) of the wet film, and connect the cathode of the external power supply to the second side (right side) of the wet film, The first side and the second side are set opposite each other, and then placed at a constant temperature of 150°C for continuous annealing treatment for 60 minutes.
  • a nano-ZnO (particle size: 5 nm)-ethanol solution with a concentration of 30 mg/mL
  • an external power supply is used to continuously energize the wet film with constant current for 60 minutes.
  • the current density of the wet film is 200mA/cm 2 , and an electron transport layer with a thickness of 50nm is obtained;
  • step S1.6 In a vacuum environment with an air pressure of 4 ⁇ 10 -6 mbar, evaporate Ag on the side of the electron transport layer away from the light-emitting layer in step S1.5 to obtain a cathode with a thickness of 100nm, and then use epoxy resin and Glass plate packaging is used to obtain a light-emitting device with the structure shown in Figure 4.
  • the light-emitting device 1 includes a glass substrate 10, an anode 11, a hole functional layer 15, a light-emitting layer 13, an electron transport layer 14 and a cathode 12 which are stacked in sequence, wherein,
  • the hole functional layer 15 is composed of a stacked hole injection layer 151 and a hole transport layer 152 .
  • the hole injection layer 151 is close to the anode 11 and the hole transport layer 152 is close to the light-emitting layer 13 .
  • This embodiment provides a method for preparing a light-emitting device and the prepared light-emitting device.
  • step S1 is .5 is replaced with "In a nitrogen environment at normal temperature and pressure, spin-coat a nano-ZnO (particle size: 5 nm)-ethanol solution with a concentration of 30 mg/mL on the side of the light-emitting layer away from the hole transport layer in step S1.4.
  • the wet film use a clamp to fix the prefabricated device containing the wet film, connect the anode of the external power supply to the first side (left side) of the wet film, and connect the cathode of the external power supply to the second side (right side) of the wet film , and the first side and the second side are set opposite each other, and then placed at a constant temperature of 150°C for continuous constant temperature heat treatment for 60 minutes, and during the annealing process, an external power supply is used to continuously conduct 200mA/200mA/ cm 2 rectangle was treated with alternating current for 60 minutes to obtain an electron transport layer with a thickness of 50nm.”
  • This embodiment provides a method for preparing a light-emitting device and the prepared light-emitting device.
  • step S1 is .5 is replaced with "In a nitrogen environment at normal temperature and pressure, spin-coat a nano-ZnO (particle size: 5 nm)-ethanol solution with a concentration of 30 mg/mL on the side of the light-emitting layer away from the hole transport layer in step S1.4.
  • the wet film use a clamp to fix the prefabricated device containing the wet film, connect the anode of the external power supply to the first side (left side) of the wet film, and connect the cathode of the external power supply to the second side (right side) of the wet film , and the first side and the second side are set opposite each other, and then placed at a constant temperature of 150°C for continuous annealing treatment for 60 minutes.
  • an external power supply is used to intermittently energize the wet film with constant current for 60 minutes.
  • the current density of the wet film is 200mA/cm 2
  • the interval between adjacent current treatments is 10 minutes
  • the time for a single electrical treatment is 10 minutes, to obtain an electron transport layer with a thickness of 50nm.”
  • This embodiment provides a method for preparing a light-emitting device and the prepared light-emitting device.
  • step S1 is .5 is replaced with "In a nitrogen environment at normal temperature and pressure, spin-coat a nano-ZnO (particle size: 5 nm)-ethanol solution with a concentration of 30 mg/mL on the side of the light-emitting layer away from the hole transport layer in step S1.4.
  • This embodiment provides a method for preparing a light-emitting device and the prepared light-emitting device.
  • step S1 is .5 is replaced with "In a nitrogen environment at normal temperature and pressure, spin-coat a nano-ZnO (particle size: 5 nm)-ethanol solution with a concentration of 30 mg/mL on the side of the light-emitting layer away from the hole transport layer in step S1.4.
  • the wet film use a clamp to fix the prefabricated device containing the wet film, connect the anode of the external power supply to the first side (left side) of the wet film, and connect the cathode of the external power supply to the second side (right side) of the wet film , and the first side and the second side are set opposite each other, and the wet film is continuously energized with constant current for 60 minutes using an external power supply.
  • the current density of the electron transmission precursor layer is 200mA/cm 2 , and during the energization treatment During the process, the wet film was subjected to intermittent annealing for 60 minutes, the annealing temperature was 150°C, the interval between adjacent annealing treatments was 5 minutes, and the single annealing treatment time was 15 minutes to obtain an electron transport layer with a thickness of 50nm.”
  • This embodiment provides a method for preparing a light-emitting device and the prepared light-emitting device.
  • step S1 is .5 is replaced with "In a nitrogen environment at normal temperature and pressure, spin-coat a nano-ZnO (particle size: 5 nm)-ethanol solution with a concentration of 30 mg/mL on the side of the light-emitting layer away from the hole transport layer in step S1.4.
  • the wet film use a clamp to fix the prefabricated device containing the wet film, connect the anode of the external power supply to the first side (left side) of the wet film, and connect the cathode of the external power supply to the second side (right side) of the wet film , and the first side and the second side are set opposite each other, use an external power supply to continuously treat the wet film with a rectangular alternating current of 200mA/ cm2 with a frequency of 50Hz for 60 minutes, and perform intermittent annealing treatment on the wet film during the power-on treatment process. 60 minutes, the annealing temperature is 150°C, the interval between adjacent annealing treatments is 5 minutes, the time of a single annealing treatment is 15 minutes, and an electron transport layer with a thickness of 50nm is obtained.”
  • This embodiment provides a method for preparing a light-emitting device and the prepared light-emitting device.
  • step S1 is .5 is replaced with "In a nitrogen environment at normal temperature and pressure, spin-coat a nano-ZnO (particle size: 5 nm)-ethanol solution with a concentration of 30 mg/mL on the side of the light-emitting layer away from the hole transport layer in step S1.4.
  • the wet film uses a clamp to fix the prefabricated device containing the wet film, connect the anode of the external power supply to the first side (left side) of the wet film, and connect the cathode of the external power supply to the second side (right side) of the wet film , and the first side and the second side are set opposite each other.
  • the wet film is intermittently energized with constant current for 60 minutes using an external power supply. During the energization process, the current density of the wet film is 200mA/cm 2 and the wet film is intermittently energized.
  • the annealing treatment is 60 minutes, the temperature of the annealing treatment is 150°C, and the energization treatment and the annealing treatment are performed alternately.
  • the interval between adjacent energization treatments is 15 minutes, the time of a single energization treatment is 5 minutes, and the interval between adjacent annealing treatments is 5 minutes.
  • the time of a single annealing treatment is 15 minutes, and an electron transport layer with a thickness of 50nm is obtained.”
  • This embodiment provides a method for preparing a light-emitting device and the prepared light-emitting device.
  • step S1 is .5 is replaced with "In a nitrogen environment at normal temperature and pressure, spin-coat a nano-ZnO (particle size: 5 nm)-ethanol solution with a concentration of 30 mg/mL on the side of the light-emitting layer away from the hole transport layer in step S1.4.
  • the wet film use a clamp to fix the prefabricated device containing the wet film, connect the anode of the external power supply to the first side (left side) of the wet film, and connect the cathode of the external power supply to the second side (right side) of the wet film , and the first side and the second side are set opposite each other, use an external power supply to intermittently treat the wet film with a rectangular alternating current of 200 mA/ cm2 with a frequency of 50 Hz for 60 minutes, and perform intermittent annealing treatment on the wet film for 60 minutes.
  • the temperature of the annealing treatment is 150°C, and the annealing treatment and the energizing treatment are carried out alternately.
  • the interval between adjacent energizing treatments is 15 minutes, and the time of a single energizing treatment is 5 minutes.
  • the interval between adjacent annealing treatments is 5 minutes, and the time of a single annealing treatment is 15 minutes.
  • This embodiment provides a method for preparing a light-emitting device and the prepared light-emitting device.
  • step S1 is .5 is replaced with "In a nitrogen environment at normal temperature and pressure, spin-coat a nano-ZnO (particle size: 5 nm)-ethanol solution with a concentration of 30 mg/mL on the side of the light-emitting layer away from the hole transport layer in step S1.4.
  • the wet film use a clamp to fix the prefabricated device containing the wet film, connect the anode of the external power supply to the first side (left side) of the wet film, and connect the cathode of the external power supply to the second side (right side) of the wet film , and the first side and the second side are set opposite each other, and then placed at a constant temperature of 150°C for continuous annealing treatment for 60 minutes.
  • an external power supply is used to continuously energize the wet film with constant current for 60 minutes.
  • the current density of the electron transport precursor layer during the electrification process is 400mA/cm 2 , and an electron transport layer with a thickness of 50nm is obtained.”
  • This embodiment provides a method for preparing a light-emitting device and the prepared light-emitting device.
  • step S1 is .5 is replaced with "Under normal temperature and normal pressure in a nitrogen environment, spin-coat a nano-ZnO (particle size: 5 nm)-ethanol solution with a concentration of 30 mg/mL on the side of the light-emitting layer away from the hole transport layer in step S1.4 to obtain Wet film, use a clamp to fix the prefabricated device containing the wet film, connect the anode of the external power supply to the first side (left side) of the wet film, and connect the cathode of the external power supply to the second side (right side) of the wet film, The first side and the second side are set opposite each other, and then placed at a constant temperature of 150°C for continuous annealing treatment for
  • This embodiment provides a method for preparing a light-emitting device and the prepared light-emitting device.
  • the preparation method includes the following steps:
  • step S11.2 In an atmospheric environment at normal temperature and pressure, spin-coat the PEDOT:PSS aqueous solution on the side of the anode away from the glass substrate in step S11.1, and then place it for constant temperature heat treatment at 150°C for 15 minutes to obtain an air layer with a thickness of 20 nm. hole injection layer;
  • step S11.3 In a nitrogen environment at normal temperature and pressure, spin-coat the TFB-chlorobenzene solution on the side of the hole injection layer away from the anode in step S11.2, and then place it for constant temperature heat treatment at 150°C for 30 minutes to obtain a thickness of 30nm. hole transport layer;
  • step S11.4 In a nitrogen environment at normal temperature and pressure, spin-coat CdZnSe/CdZnS/ZnS quantum dots-n-octane with a concentration of 10 mg/mL on the side of the hole transport layer away from the hole injection layer in step S11.3. The solution is then placed in a constant temperature heat treatment at 100°C for 5 minutes to obtain a luminescent layer with a thickness of 20nm;
  • step S11.7 In a vacuum environment with an air pressure of 4 ⁇ 10 -6 mbar, evaporate Ag on the side of the electron transport layer away from the light-emitting layer in step S11.6 to obtain a cathode with a thickness of 100nm, and then use epoxy resin and Glass plate packaging is used to obtain a light-emitting device with a structure as shown in Figure 6.
  • This embodiment provides a method for preparing a light-emitting device and the prepared light-emitting device.
  • step S11 is .6 is replaced with "In a nitrogen environment at normal temperature and pressure, use a clamp to fix the laminated structure containing the electron transmission precursor layer, provide an external power supply, connect the first end of the external power supply to the anode, and the second end of the external power supply to the ground , and then placed at a constant temperature of 150°C for continuous annealing for 60 minutes.
  • an external power supply applied a constant voltage of -25V to the electron transport precursor layer for continuous charging for 60 minutes, so that the electron transport precursor layer contained
  • the entire prefabricated device of the precursor layer carries negative charges during the heating and annealing process to obtain an electron transport layer with a thickness of 50nm.”
  • This embodiment provides a method for preparing a light-emitting device and the prepared light-emitting device.
  • step S11 is .6 is replaced with "In a nitrogen environment at normal temperature and pressure, use a clamp to fix the laminated structure containing the electron transmission precursor layer, provide an external power supply, connect the first end of the external power supply to the anode, and the second end of the external power supply to the ground , and then placed at a constant temperature of 150°C for continuous annealing for 60 minutes.
  • an external power supply applied a constant voltage of 8V to the electron transport precursor layer for continuous charging for 60 minutes, so that the electron transport precursor layer contained
  • the entire prefabricated device of the layer carries a positive charge, obtaining an electron transport layer with a thickness of 50nm.”
  • This embodiment provides a method for preparing a light-emitting device and the prepared light-emitting device.
  • step S11 is .6 is replaced with "In a nitrogen environment at normal temperature and pressure, use a clamp to fix the laminated structure containing the electron transmission precursor layer, provide an external power supply, connect the first end of the external power supply to the anode, and the second end of the external power supply to the ground , and then placed at a constant temperature of 150°C for continuous annealing for 60 minutes.
  • an external power supply applied a constant voltage of 40V to the electron transport precursor layer for continuous charging for 60 minutes, so that the electron transport precursor layer contained
  • the entire prefabricated device of the layer carries a positive charge, obtaining an electron transport layer with a thickness of 50nm.”
  • This embodiment provides a method for preparing a light-emitting device and the prepared light-emitting device.
  • step S11 is .6 is replaced with "In a nitrogen environment at normal temperature and pressure, use a clamp to fix the laminated structure containing the electron transmission precursor layer, provide an external power supply, connect the first end of the external power supply to the anode, and the second end of the external power supply to the ground , and then placed at a constant temperature of 150°C for continuous annealing for 60 minutes, and during the annealing process, an external power supply applied a rectangular AC voltage (frequency 50Hz) from negative 25V to positive 25V to the electron transport precursor layer for continuous The charge treatment was performed for 60 minutes, so that the prefabricated device containing the electron transport precursor layer alternately carries positive and negative charges, and an electron transport layer with a thickness of 50nm was obtained.”
  • This embodiment provides a method for preparing a light-emitting device and the prepared light-emitting device.
  • step S11 is .6 is replaced with "In a nitrogen environment at normal temperature and pressure, use a clamp to fix the laminated structure containing the electron transmission precursor layer, provide an external power supply, connect the first end of the external power supply to the anode, and the second end of the external power supply to the ground , and then placed at a constant temperature of 150°C for continuous annealing treatment for 60 minutes, and during the annealing treatment process, turn on the external power supply to perform intermittently constant voltage (voltage is positive 25V) charging treatment on the electron transmission precursor layer for 60 minutes, the charging treatment process
  • the prefabricated device containing the electron transport precursor layer carries a positive charge as a whole, the interval between adjacent charging treatments is 10 minutes, and the time for a single charging
  • This embodiment provides a method for preparing a light-emitting device and the prepared light-emitting device.
  • step S11 is .6 is replaced with "In a nitrogen environment at normal temperature and pressure, use a clamp to fix the laminated structure containing the electron transmission precursor layer, provide an external power supply, connect the first end of the external power supply to the anode, and the second end of the external power supply to the ground , and then placed at a constant temperature of 150°C for continuous annealing for 60 minutes.
  • the annealing process During the annealing process, turn on the external power supply and apply a rectangular AC voltage to the electron transport precursor layer (frequency is 50Hz, voltage is negative 25V to positive 25V) Perform intermittently charging treatment for 60 minutes. During the charging process, the entire prefabricated device including the electron transport precursor layer alternately carries positive and negative charges. The interval between adjacent charging treatments is 10 minutes, and the time for a single charging treatment is 10 minutes. Obtain an electron transport layer with a thickness of 50nm.”
  • This embodiment provides a method for preparing a light-emitting device and the prepared light-emitting device.
  • step S11 is .6 is replaced with "In a nitrogen environment at normal temperature and pressure, use a clamp to fix the laminated structure containing the electron transmission precursor layer, provide an external power supply, connect the first end of the external power supply to the anode, and the second end of the external power supply to the ground , turn on the external power supply, apply a constant voltage of positive 25V to the electron transport precursor layer for continuous charging treatment for 60 minutes, so that the entire prefabricated device containing the electron transport precursor layer carries a positive charge, and during the charging process, the electrons
  • the transmission precursor layer is subjected to intermittent constant temperature (150°C) annealing for 60 minutes to perform the heating annealing process. The interval between adjacent annealing treatments is 5 minutes, and the
  • This embodiment provides a method for preparing a light-emitting device and the prepared light-emitting device.
  • step S11 is .6 is replaced with "In a nitrogen environment at normal temperature and pressure, use a clamp to fix the laminated structure containing the electron transmission precursor layer, provide an external power supply, connect the first end of the external power supply to the anode, and the second end of the external power supply to the ground , turn on the external power supply, apply a rectangular AC voltage (frequency is 50Hz, voltage is negative 25V to positive 25V) to the electron transmission precursor layer for continuous charging treatment for 60 minutes, so that the entire prefabricated device including the electron transmission precursor layer alternately carries positive energy and negative charges, and during the charging process, the electron transport precursor layer is subjected to intermittent constant temperature (150°C) annealing treatment for 60 minutes to perform the heating annealing process, so
  • step S11 is .6 is replaced with "In a nitrogen environment at normal temperature and pressure, use a clamp to fix the laminated structure containing the electron transmission precursor layer
  • This embodiment provides a method for preparing a light-emitting device and the prepared light-emitting device.
  • step S11 is .6 is replaced with "In a nitrogen environment at normal temperature and pressure, use a clamp to fix the laminated structure containing the electron transmission precursor layer, provide an external power supply, connect the first end of the external power supply to the anode, and the second end of the external power supply to the ground , turn on the external power supply, apply a constant voltage of positive 25V to the electron transport precursor layer for intermittently charging treatment for 60 minutes.
  • the entire prefabricated device containing the electron transport precursor layer carries a positive charge, and the electron transport precursor layer is charged.
  • This embodiment provides a method for preparing a light-emitting device and the prepared light-emitting device.
  • step S11 is .6 is replaced with "In a nitrogen environment at normal temperature and pressure, use a clamp to fix the laminated structure containing the electron transmission precursor layer, provide an external power supply, connect the first end of the external power supply to the anode, and the second end of the external power supply to the ground , turn on the external power supply, apply a rectangular AC voltage (frequency is 50Hz, voltage is negative 25V to positive 25V) to the electron transmission precursor layer for intermittently charging treatment for 60 minutes.
  • the entire prefabricated device including the electron transmission precursor layer is alternately transformed
  • the ground carries positive and negative charges
  • the electron transport precursor layer is subjected to intermittent constant temperature (150°C) annealing treatment for 60 minutes.
  • the charging treatment and annealing treatment are performed alternately.
  • the time of a single charging treatment is 5 minutes, and the time of a single annealing treatment is In 15 minutes, an electron transport layer with a thickness of 50nm was obtained.”
  • This embodiment provides a method for preparing a light-emitting device and the prepared light-emitting device.
  • step S11 is .6 is replaced by "Under a nitrogen environment at normal temperature and pressure, the electron transport precursor layer is continuously annealed at a constant temperature (150°C) for 60 minutes to form a dry film, and then a clamp is used to fix the stacked structure containing the dry film, and an external power supply is provided , connect the first end of the external power supply to the anode, and connect the second end of the external power supply to ground.
  • This embodiment provides a method for preparing a light-emitting device and the prepared light-emitting device.
  • step S11 is .6 is replaced by "In a nitrogen environment at normal temperature and pressure, use a clamp to fix the laminated structure containing the electron transmission precursor layer (wet film), provide an external power supply, and connect the first end of the external power supply to the anode.
  • the second end is grounded, the external power supply is turned on, and a rectangular AC voltage (frequency is 50Hz, voltage is negative 25V to positive 25V) is applied to the electron transmission precursor layer for continuous charging treatment for 60 minutes.
  • the charging process includes the prefabrication of the electron transmission precursor layer
  • the entire device alternately carries positive and negative charges.
  • the prefabricated device is continuously annealed at a constant temperature (150°C) for 60 minutes to form an electron transport layer with a thickness of 50nm.”
  • This comparative example provides a method for preparing a light-emitting device and the prepared light-emitting device.
  • step S1 is .5 is replaced with "In a nitrogen environment at normal temperature and pressure, spin-coat a nano-ZnO (particle size: 5 nm)-ethanol solution with a concentration of 30 mg/mL on the side of the light-emitting layer away from the hole transport layer in step S1.4.
  • a wet film was obtained and then continuously annealed at a constant temperature of 150°C for 60 minutes to obtain an electron transport layer with a thickness of 50nm.”
  • This comparative example provides a method for preparing a light-emitting device and the prepared light-emitting device. Compared with the method for preparing a light-emitting device provided in Embodiment 11, the difference between the method for preparing a light-emitting device in this comparative example is that step S11 is .6 is replaced by "Under a nitrogen environment at normal temperature and pressure, the electron transport precursor layer is continuously annealed at a constant temperature (150°C) for 60 minutes to obtain an electron transport layer with a thickness of 50nm.”
  • FPD optical characteristic measurement equipment efficiency test system built by LabView to control QE-PRO spectrometer, Keithley 2400 and Keithley 6485
  • Quantum efficiency, power efficiency and other key parameters, and use life testing equipment to test the service life of each of the above-mentioned light-emitting devices.
  • the life test uses the constant current method. Driven by a constant current (2mA current), a silicon photonic system is used to test the brightness changes of each light-emitting device, and the time required for the brightness to decay from 100% to 95% is recorded (T95, h ), and calculate the LT95@1000nit of each light-emitting device.
  • the experimental results are detailed in Table 1 below:
  • the comprehensive performance of the light-emitting devices in Examples 1 to 10 is significantly better than that of the light-emitting devices in Comparative Example 1.
  • the EQE max of the light-emitting devices in Example 2 is The EQE max of the light-emitting device in Example 1 is 2.2 times, and the LT95@1000nit of the light-emitting device in Example 5 is 3.7 times the LT95@1000nit of the light-emitting device in Comparative Example 1; after the package is placed for 30 days, the EQE max of the light-emitting device in Example 5 The EQE max is 3.7 times that of the light-emitting device in Comparative Example 1, and the LT95@1000nit of the light-emitting device in Example 5 is 15.2 times that of the light - emitting device in Comparative Example 1.
  • the EQE of the light-emitting device in Example 15 max is 3.7 times that of the EQE max of the light-emitting device in Comparative Example 2
  • the LT95@1000nit of the light-emitting device in Example 15 is 14.7 times that of the light-emitting device in Comparative Example 2.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente demande divulgue un procédé de fabrication d'un dispositif électroluminescent, un dispositif électroluminescent et un appareil d'affichage. Le procédé de fabrication comprend les étapes suivantes consistant à : fournir un dispositif préfabriqué, et appliquer une solution contenant un nano-oxyde métallique à un côté du dispositif préfabriqué ; et dans une plage de temps prédéfinie, effectuer un traitement de recuit et un traitement électrique sur la solution située sur un côté du dispositif préfabriqué, de façon à former une couche de transfert d'électrons. La présente demande améliore efficacement la cristallinité, la conductivité et la stabilité de la couche de transfert d'électrons.
PCT/CN2022/140059 2022-04-14 2022-12-19 Procédé de fabrication de dispositif électroluminescent, dispositif électroluminescent et appareil d'affichage WO2023197659A1 (fr)

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CN202210394651.8A CN116981311A (zh) 2022-04-14 2022-04-14 发光器件的制备方法、发光器件与显示装置
CN202210394651.8 2022-04-14
CN202210393991.9A CN116981310A (zh) 2022-04-14 2022-04-14 发光器件的制备方法、发光器件与显示装置
CN202210393991.9 2022-04-14

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Citations (4)

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Publication number Priority date Publication date Assignee Title
US20140147951A1 (en) * 2012-11-27 2014-05-29 Massachusetts Institute Of Technology Deposition of semiconductor nanocrystals for light emitting devices
CN108987597A (zh) * 2018-07-17 2018-12-11 嘉兴纳鼎光电科技有限公司 常温稳定存储的组合物及量子点发光二极管器件的制法
CN112736214A (zh) * 2021-01-19 2021-04-30 Tcl华星光电技术有限公司 发光层的制备方法及显示面板
CN114284461A (zh) * 2021-12-24 2022-04-05 合肥福纳科技有限公司 一种量子点发光二极管及其制备方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140147951A1 (en) * 2012-11-27 2014-05-29 Massachusetts Institute Of Technology Deposition of semiconductor nanocrystals for light emitting devices
CN108987597A (zh) * 2018-07-17 2018-12-11 嘉兴纳鼎光电科技有限公司 常温稳定存储的组合物及量子点发光二极管器件的制法
CN112736214A (zh) * 2021-01-19 2021-04-30 Tcl华星光电技术有限公司 发光层的制备方法及显示面板
CN114284461A (zh) * 2021-12-24 2022-04-05 合肥福纳科技有限公司 一种量子点发光二极管及其制备方法

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