WO2023182351A1 - Substrate treatment device and substrate treatment method - Google Patents
Substrate treatment device and substrate treatment method Download PDFInfo
- Publication number
- WO2023182351A1 WO2023182351A1 PCT/JP2023/011202 JP2023011202W WO2023182351A1 WO 2023182351 A1 WO2023182351 A1 WO 2023182351A1 JP 2023011202 W JP2023011202 W JP 2023011202W WO 2023182351 A1 WO2023182351 A1 WO 2023182351A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- liquid repellent
- brush
- liquid
- shoulder
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 300
- 238000000034 method Methods 0.000 title claims description 22
- 239000007788 liquid Substances 0.000 claims abstract description 249
- 239000005871 repellent Substances 0.000 claims abstract description 221
- 230000002940 repellent Effects 0.000 claims abstract description 198
- 239000000126 substance Substances 0.000 claims abstract description 50
- 238000000576 coating method Methods 0.000 claims abstract description 21
- 239000011248 coating agent Substances 0.000 claims abstract description 18
- 230000001846 repelling effect Effects 0.000 claims abstract description 10
- 239000003795 chemical substances by application Substances 0.000 claims description 41
- 238000003672 processing method Methods 0.000 claims description 19
- 230000002093 peripheral effect Effects 0.000 description 37
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 239000000463 material Substances 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 9
- 239000000243 solution Substances 0.000 description 8
- 239000012530 fluid Substances 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- -1 organosilane compound Chemical class 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- GJWAPAVRQYYSTK-UHFFFAOYSA-N [(dimethyl-$l^{3}-silanyl)amino]-dimethylsilicon Chemical compound C[Si](C)N[Si](C)C GJWAPAVRQYYSTK-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- ADTGAVILDBXARD-UHFFFAOYSA-N diethylamino(dimethyl)silicon Chemical compound CCN(CC)[Si](C)C ADTGAVILDBXARD-UHFFFAOYSA-N 0.000 description 1
- KZFNONVXCZVHRD-UHFFFAOYSA-N dimethylamino(dimethyl)silicon Chemical compound CN(C)[Si](C)C KZFNONVXCZVHRD-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- DKAGJZJALZXOOV-UHFFFAOYSA-N hydrate;hydrochloride Chemical compound O.Cl DKAGJZJALZXOOV-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000001165 hydrophobic group Chemical group 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- QULMGWCCKILBTO-UHFFFAOYSA-N n-[dimethylamino(dimethyl)silyl]-n-methylmethanamine Chemical compound CN(C)[Si](C)(C)N(C)C QULMGWCCKILBTO-UHFFFAOYSA-N 0.000 description 1
- KAHVZNKZQFSBFW-UHFFFAOYSA-N n-methyl-n-trimethylsilylmethanamine Chemical compound CN(C)[Si](C)(C)C KAHVZNKZQFSBFW-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Definitions
- the present invention relates to a substrate processing apparatus and a substrate processing method.
- the substrate processing apparatus described in Patent Document 1 includes a peripheral edge processing head.
- the peripheral edge processing head processes the peripheral edge of the surface of the substrate held by the spin chuck.
- the peripheral treatment head includes a suction tube. A suction tube suctions excess processing liquid on the surface periphery.
- the present invention has been made in view of the above-mentioned problems, and its purpose is to provide a substrate processing method that can suppress the application of excess liquid repellent to parts other than the end surface of the substrate while suppressing the increase in processing steps.
- An object of the present invention is to provide an apparatus and a substrate processing method.
- a substrate processing apparatus includes a substrate holding section and a coating member.
- the substrate holder rotates the substrate while holding the substrate.
- the application member is configured to apply a liquid repellent containing a liquid repellent substance capable of repelling a processing liquid for treating the substrate by contacting a radially outer end surface of the rotating substrate to the end surface of the substrate. Apply to.
- the application member apply the liquid repellent to the end surface portion of the substrate while rotating.
- the end surface portion of the substrate preferably has a front edge, a front shoulder, a side surface, a back shoulder, and a back edge. It is preferable that the surface edge portion is located radially outward from the main body of the substrate on the front surface side of the front surface and the back surface of the substrate.
- the surface shoulder portion is preferably located radially outward from the surface edge portion on the surface side. It is preferable that the back edge portion is located radially outward from the main body of the substrate on the back side. It is preferable that the back shoulder portion is located radially outward from the back edge on the back side.
- the side surface portion is located at the outermost position in the radial direction of the substrate.
- the application member applies the liquid repellent to the side surface portion.
- the application member apply the liquid repellent to the front shoulder, the side surface, and the back shoulder.
- At least a portion of the application member enters a notch existing in the end surface portion of the substrate and contacts a bottom point of the notch.
- the substrate processing apparatus preferably further includes a biasing mechanism.
- the biasing mechanism biases the application member radially inward of the substrate.
- the substrate processing apparatus preferably further includes a liquid repellent supply section. It is preferable that the liquid repellent supply unit supplies the liquid repellent to the application member.
- the substrate processing method includes the steps of rotating the substrate while holding the substrate, and bringing an application member into contact with a radially outer end surface of the rotating substrate.
- the method includes the step of applying a liquid repellent containing a liquid repellent substance capable of repelling a processing liquid for processing the substrate to the end surface portion of the substrate.
- the liquid repellent in the step of applying the liquid repellent, it is preferable that the liquid repellent is applied to the end surface portion of the substrate while rotating the application member.
- the end surface portion of the substrate preferably has a front edge, a front shoulder, a side surface, a back shoulder, and a back edge. It is preferable that the surface edge portion is located radially outward from the main body of the substrate on the front surface side of the front surface and the back surface of the substrate.
- the surface shoulder portion is preferably located radially outward from the surface edge portion on the surface side. It is preferable that the back edge portion is located radially outward from the main body of the substrate on the back side. It is preferable that the back shoulder portion is located radially outward from the back edge on the back side.
- the side surface portion is located at the outermost position in the radial direction of the substrate. In the step of applying the liquid repellent, it is preferable that the liquid repellent is applied to the side surface portion.
- the liquid repellent in the step of applying the liquid repellent, it is preferable that the liquid repellent is applied to the front shoulder, the side surface, and the back shoulder.
- At least a portion of the application member enters the notch present in the end surface portion of the substrate and contacts the bottom point of the notch. is preferred.
- the application member in the step of applying the liquid repellent, it is preferable that the application member is urged inward in the radial direction of the substrate.
- the substrate processing method preferably further includes a step of supplying the liquid repellent to the coating member.
- FIG. 1 is a plan view showing the inside of a substrate processing apparatus according to an embodiment of the present invention.
- FIG. 2 is a plan view showing the inside of the liquid repellent application unit according to the present embodiment.
- FIG. 2 is a side view showing the inside of the liquid repellent application unit according to the present embodiment. It is a figure showing the liquid repellent application method concerning this embodiment.
- (a) is a sectional view showing a substrate and a brush according to the present embodiment.
- (b) is a cross-sectional view showing a state in which a liquid repellent agent is applied to the side surface of the substrate according to the present embodiment.
- FIG. 2 is a plan view showing a part of the substrate according to the present embodiment.
- FIG. 2 is a plan view showing a substrate according to the present embodiment.
- FIG. 3 is a plan view showing a state in which the brush according to the present embodiment is in contact with a notch.
- FIG. 3 is a plan view showing a brush and a notch according to the present embodiment.
- 3 is a flowchart showing a substrate processing method according to the present embodiment.
- FIG. 1 is a plan view showing the inside of the substrate processing apparatus 100.
- the substrate processing apparatus 100 shown in FIG. 1 processes a substrate W. For example, a pattern including a plurality of structures is formed on the substrate W.
- the substrate W may be, for example, a semiconductor wafer (for example, a silicon wafer), a liquid crystal display substrate, a plasma display substrate, a field emission display (FED) substrate, an optical disk substrate, a magnetic disk substrate, or a magneto-optical substrate. It is a disk substrate, a photomask substrate, a ceramic substrate, or a solar cell substrate.
- the substrate W is a silicon wafer.
- the substrate processing apparatus 100 includes a plurality of load ports LP, an indexer robot IR, a center robot CR, a plurality of processing units 1, a control device 2, a plurality of fluid boxes 3, It includes a chemical solution cabinet 4 and a liquid repellent application unit 5.
- Each of the load ports LP accommodates a plurality of stacked substrates W.
- the indexer robot IR transports the substrate W between the load port LP and the center robot CR.
- the center robot CR transports the substrate W between the indexer robot IR and the processing unit 1, between the indexer robot IR and the liquid repellent coating unit 5, or between the processing unit 1 and the liquid repellent coating unit 5. do.
- the liquid repellent application unit 5 applies a liquid repellent to the substrate W. Details of the liquid repellent application unit 5 will be described later.
- Each of the processing units 1 processes a substrate W using a processing liquid.
- Each of the processing units 1 is a single-wafer type device that processes the substrates W one by one.
- the processing unit 1 includes a front nozzle 7 and a back nozzle 8.
- the front surface nozzle 7 processes the front surface of the substrate W by supplying a processing liquid to the front surface of the substrate W, which is the front surface (upper surface) and the back surface (lower surface) of the substrate W.
- the backside nozzle 8 supplies a processing liquid to the backside of the substrate W to process the backside of the substrate W.
- the processing liquid is a chemical liquid or a rinsing liquid.
- the chemical liquid is a liquid for treating the substrate W.
- Examples of chemical solutions include dilute hydrofluoric acid (DHF), hydrofluoric acid (HF), buffered hydrofluoric acid (BHF), ammonium fluoride, HFEG (mixture of hydrofluoric acid and ethylene glycol), phosphoric acid (H 3 PO 4 ), and sulfuric acid. , acetic acid, nitric acid, hydrochloric acid, aqueous ammonia, aqueous hydrogen peroxide, organic acids (e.g. citric acid, oxalic acid), organic alkalis (e.g.
- TMAH tetramethylammonium hydroxide
- SC1 aqueous ammonia/hydrogen peroxide mixture
- SC2 a mixture of hydrochloric acid and hydrogen peroxide
- IPA isopropyl alcohol
- surfactant a corrosion inhibitor
- the rinsing liquid is a liquid for washing away a chemical solution, by-products after processing with the chemical solution, and/or foreign matter from the substrate W.
- the rinsing liquid is, for example, deionized water (DIW), carbonated water, electrolyzed ionized water, hydrogen water, ozone water, or hydrochloric acid water at a diluted concentration (for example, about 10 ppm to 100 ppm).
- a predetermined number of processing units 1 are stacked vertically to form one tower TW.
- one tower TW among the plurality of towers TW includes one liquid repellent application unit 5 instead of one processing unit 1.
- the plurality of towers TW are arranged so as to surround the center robot CR in a plan view.
- the arrangement of the liquid repellent application unit 5 is not particularly limited; for example, the liquid repellent application unit 5 may be arranged in a dedicated space in the substrate processing apparatus 100, or may be arranged outside the substrate processing apparatus 100. You can leave it there.
- the substrate processing apparatus 100 may include a plurality of liquid repellent coating units 5.
- Each of the plurality of fluid boxes 3 accommodates a fluid device.
- Each of the plurality of fluid boxes 3 corresponds to the plurality of towers TW.
- the chemical liquid cabinet 4 accommodates chemical liquids.
- the chemical solution in the chemical solution cabinet 4 is supplied to all the processing units 1 included in the tower TW corresponding to the fluid box 3 via any one of the fluid boxes 3.
- the control device 2 controls the load port LP, indexer robot IR, center robot CR, processing unit 1, fluid box 3, chemical solution cabinet 4, and liquid repellent application unit 5.
- the control device 2 is, for example, a computer.
- the control device 2 includes a control section 21 and a storage section 22.
- the control unit 21 includes a processor such as a CPU (Central Processing Unit).
- the storage unit 22 includes a storage device and stores data and computer programs. Specifically, the storage unit 22 includes a main storage device such as a semiconductor memory, and an auxiliary storage device such as a semiconductor memory, a solid state drive, and/or a hard disk drive.
- the storage unit 22 may include removable media.
- the storage unit 22 corresponds to an example of a non-transitory computer-readable storage medium.
- FIG. 2 is a plan view showing the inside of the liquid repellent application unit 5.
- the liquid repellent coating unit 5 includes a chamber 11, a spin chuck 13, a liquid repellent coating mechanism 15, a liquid repellent supply section 17, and a liquid receiving section 19.
- the liquid repellent supply unit 17 includes a liquid repellent nozzle 171, a valve 172, and a pipe 173.
- the control unit 21 controls the spin chuck 13, the liquid repellent application mechanism 15, and the liquid repellent supply unit 17.
- the chamber 11 has a substantially box shape.
- the chamber 11 accommodates the spin chuck 13 , the liquid repellent coating mechanism 15 , the liquid repellent nozzle 171 , and the liquid receiving section 19 .
- the spin chuck 13 corresponds to an example of the "substrate holder" of the present invention.
- the spin chuck 13 rotates the substrate W while holding it. Specifically, the spin chuck 13 rotates the substrate W around the rotation axis AX1 while holding the substrate W substantially horizontally.
- the liquid repellent application mechanism 15 applies a liquid repellent to the end surface portion 51 of the substrate W on the outer side in the radial direction RD.
- the end surface portion 51 is a substantially annular portion of the substrate W around the rotation axis AX1.
- the radial direction RD is approximately parallel to the horizontal direction.
- the radial direction RD is orthogonal to the rotation axis AX1.
- the radial direction RD can also be regarded as the radial direction with respect to the rotation axis AX1.
- the circumferential direction around the rotation axis AX1 may be referred to as a circumferential direction CD.
- the circumferential direction CD can also be regarded as the circumferential direction of the substrate W.
- a liquid repellent is a liquid containing a liquid repellent substance.
- the liquid repellent is a solution containing a liquid repellent substance.
- the liquid-repellent substance is a substance that can repel the processing liquid used to process the substrate W.
- the liquid-repellent substance is a substance that has a property of repelling the processing liquid more than the substrate W.
- the liquid repellent substance has liquid repellency.
- Liquid repellency is the property of repelling liquid. For example, a substance with a contact angle of 90 degrees or more is a liquid-repellent substance.
- a liquid repellent is a mixture of a solvent and a liquid repellent substance as a solute.
- the solvent is, for example, water.
- Water is, for example, the same liquid as the rinse liquid.
- the liquid repellent substance is, for example, a polymer compound.
- the liquid repellent material is preferably a non-fluorine liquid repellent material.
- NeoSeed registered trademark manufactured by NICCA CHEMICAL CO., LTD. can be used as the liquid repellent material.
- the liquid repellent may be wax.
- the liquid-repellent substance is, for example, a water-repellent substance.
- a water-repellent substance is a substance that can repel water.
- the water-repellent material is a material that has a property of repelling water more than the substrate W.
- the water repellent substance has water repellency.
- Water repellency is the property of repelling water.
- a substance with a contact angle of 90 degrees or more is a water-repellent substance.
- the water in this case is, for example, the same liquid as the rinse liquid.
- the liquid-repellent substance is used as the liquid-repellent substance, it is effective when the treatment liquid is an aqueous solution.
- the liquid-repellent agent is a water-repellent agent.
- the liquid-repellent material may be, for example, a silicon-based liquid-repellent material or an acrylic-based liquid-repellent material.
- the silicon-based liquid repellent substance imparts liquid repellency to silicon itself and to compounds containing silicon.
- the silicone-based liquid repellent substance is, for example, a silane coupling agent.
- the silane coupling agent includes, for example, at least one of HMDS (hexamethyldisilazane), TMS (tetramethylsilane), fluorinated alkylchlorosilane, alkyldisilazane, and a non-chloro hydrophobizing agent.
- Non-chloro hydrophobizing agents include, for example, dimethylsilyldimethylamine, dimethylsilyldiethylamine, hexamethyldisilazane, tetramethyldisilazane, bis(dimethylamino)dimethylsilane, N,N-dimethylaminotrimethylsilane, N-(trimethylsilyl ) Contains at least one of dimethylamine and an organosilane compound.
- liquid-repellent material may be, for example, a metal-based liquid-repellent material.
- Metal-based liquid repellent substances provide liquid repellency to metals themselves and compounds containing metals.
- the metal-based liquid-repellent substance includes, for example, at least one of an amine having a hydrophobic group and an organic silicon compound.
- the liquid repellent application mechanism 15 includes a brush 151.
- the brush 151 corresponds to an example of the "application member" of the present invention.
- the brush 151 includes a liquid-repellent material that can repel the processing liquid for processing the substrate W by contacting the end surface portion 51 on the outer side in the radial direction RD of the substrate W while the substrate W is rotating.
- a liquid repellent agent is applied to the end surface portion 51 of the substrate W. Therefore, compared to the case where the liquid repellent agent is discharged onto the substrate W using a nozzle or the like, it is possible to suppress the excessive liquid repellent agent from being applied to the portions other than the end surface portion 51 of the substrate W. In addition, there is no need for a suction step to suction excess liquid repellent.
- the portion of the substrate W other than the end surface portion 51 is, for example, a portion of the substrate W where a pattern is formed.
- the nozzle or the like is spaced apart from the substrate W, so when the liquid repellent agent is discharged from the nozzle or the like, the liquid repellent agent touches the end surface portion 51 of the substrate W. There is a possibility that it will scatter to other parts.
- the application position P1 indicates the position where the brush 151 contacts the end surface portion 51 of the substrate W.
- the standby position P2 indicates a position outside the application position P1 in the radial direction RD. That is, the standby position P2 indicates a position where the brush 151 is separated from the substrate W in the radial direction RD.
- a liquid receiver 19 is arranged below the standby position P2.
- the liquid receiving part 19 is, for example, a pot.
- the liquid repellent supply unit 17 supplies the liquid repellent to the brush 151. Therefore, according to this embodiment, the brush 151 can be effectively impregnated with the liquid repellent.
- the brush 151 has, for example, a substantially cylindrical shape.
- the brush 151 has elasticity, for example.
- Brush 151 includes, for example, a porous material. In this case, for example, the brush 151 may be spongy. It is preferable that the brush 151 has liquid repellency. This is because the liquid repellent agent is easily transferred to the substrate W.
- the material of the brush 151 is, for example, PTFE (polytetrafluoroethylene) or PFA (tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer). Note that, for example, the brush 151 may be configured by combining a plurality of members, or may include a plurality of bristles.
- the liquid repellent nozzle 171 discharges the liquid repellent to the brush 151 located at the standby position P2. As a result, the liquid repellent soaks into the brush 151.
- a pipe 173 is connected to the liquid repellent nozzle 171. Piping 173 supplies the liquid repellent to the liquid repellent nozzle 171 .
- a valve 172 is arranged in the pipe 173. The valve 172 closes or opens the flow path of the pipe 173.
- the control unit 21 controls the valve 172 so that the valve 172 opens the flow path of the pipe 173.
- the liquid repellent nozzle 171 discharges the liquid repellent towards the brush 151.
- the liquid repellent that has not soaked into the brush 151 falls into the liquid receiving part 19 and accumulates in the liquid receiving part 19.
- FIG. 3 is a side view showing the inside of the liquid repellent application unit 5.
- the spin chuck 13 is a vacuum suction type chuck.
- the spin chuck 13 includes a spin shaft 131, a spin base 132, and a spin motor 133.
- the spin axis 131 extends substantially vertically.
- the spin base 132 has a substantially disk shape and is attached to the upper end of the spin shaft 131.
- the spin base 132 holds the substrate W in a substantially horizontal position. In the example of FIG. 3, the spin base 132 attracts and holds the back surface of the substrate W in a substantially horizontal position.
- the spin motor 133 has a rotation shaft coaxially coupled to the spin shaft 131. Then, the spin motor 133 rotates the substrate W around the rotation axis AX1 of the spin shaft 131 while the substrate W is held on the spin base 132.
- the liquid repellent application unit 5 further includes a heating section 20.
- the heating unit 20 heats the outer portion of the substrate W in the radial direction RD from the back side of the substrate W under the control of the control unit 21 .
- the heating unit 20 is arranged outside the spin chuck 13 in the radial direction RD.
- the heating unit 20 is arranged below the substrate W. Specifically, the heating unit 20 is disposed below the outer portion of the substrate W in the radial direction RD.
- the heating section 20 has a substantially annular shape extending around the rotation axis AX1.
- the heating unit 20 is, for example, a heater.
- the direction along the rotation axis AX1 may be referred to as the axial direction AD.
- the axial direction AD is perpendicular to the substrate W and substantially parallel to the vertical direction.
- the liquid repellent application mechanism 15 swings the brush 151 along the horizontal direction and moves the brush 151 up and down under the control of the control unit 21.
- the liquid repellent application mechanism 15 moves the brush 151 between the application position P1 (FIG. 2) and the standby position P2 (FIG. 2).
- the liquid repellent application mechanism 15 includes a swinging arm 152, a swinging mechanism 153, a lifting mechanism 154, and an arm pivot 155.
- a brush 151 is attached to the tip of the swing arm 152 on one side in the horizontal direction.
- the swing arm 152 swings the brush 151 substantially horizontally, and moves the brush 151 up and down.
- the swing mechanism 153 swings the swing arm 152 approximately in the horizontal direction around the swing axis AX3 under the control of the control unit 21.
- the upper end of the arm base shaft 155 is coupled to the other side of the swing arm 152 in the horizontal direction.
- the driving force of the swing mechanism 153 is input to the arm base shaft 155.
- the arm base shaft 155 is reciprocated and the swing arm 152 is swung about the arm base shaft 155 as a fulcrum.
- the swing mechanism 153 includes, for example, a motor.
- the lifting mechanism 154 raises and lowers the swing arm 152 under the control of the control unit 21.
- a lifting mechanism 154 is coupled to the arm base shaft 155.
- the elevating mechanism 154 moves the arm base shaft 155 up and down, and moves the swing arm 152 up and down integrally with the arm base shaft 155.
- the elevating mechanism 154 includes, for example, a ball screw mechanism and a motor that provides driving force to the ball screw mechanism.
- the swing arm 152 includes an arm main body 156, a support shaft 157, and a rotation mechanism 158.
- the arm body 156 is hollow and extends substantially horizontally.
- the arm body 156 swings approximately horizontally by the swing mechanism 153.
- the arm main body 156 is raised and lowered by the raising and lowering mechanism 154.
- the support shaft 157 is located on one horizontal side of the arm body 156 and protrudes substantially horizontally.
- the rotation mechanism 158 is supported by a support shaft 157.
- a brush 151 is attached to the lower end of the rotation mechanism 158.
- the rotation mechanism 158 rotates the brush 151 around the rotation axis AX2 under the control of the control unit 21. In other words, the rotation mechanism 158 causes the brush 151 to rotate.
- the rotation mechanism 158 includes a brush motor 160 and a brush holder 162.
- the output shaft 161 of the brush motor 160 extends vertically downward. That is, the output shaft 161 extends downward along the axial direction AD.
- a brush holder 162 is attached to the lower end of the output shaft 161.
- Brush holder 162 holds brush 151.
- the brush motor 160 rotates the brush holder 162 and the brush 151 around the rotation axis AX2 by rotating the output shaft 161.
- the rotation axis AX2 is substantially parallel to the rotation axis AX1. Therefore, the axial direction AD is approximately parallel to the rotation axis AX2.
- the swing arm 152 further includes a biasing mechanism 159.
- the biasing mechanism 159 biases the brush 151 toward the inside of the substrate W in the radial direction RD via the support shaft 157 and the rotation mechanism 158 under the control of the control unit 21 .
- the biasing mechanism 159 maintains the pressing force of the brush 151 in the radial direction RD against the end surface portion 51 of the substrate W at a preset pressing force.
- the pressing force is the pressure when pressing the brush 151 against the end surface portion 51 in the radial direction RD.
- the biasing mechanism 159 biases the brush 151 toward the inside of the substrate W in the radial direction RD by driving the support shaft 157 along the radial direction RD using an air cylinder.
- FIG. 4 is a diagram showing a liquid repellent application method according to the present embodiment.
- the liquid repellent coating method includes step S10, step S20, and step S30.
- step S10 at the standby position P2, the liquid repellent nozzle 171 discharges the liquid repellent 81 toward the rotating brush 151.
- the liquid repellent agent 81 soaks into the brush 151.
- step S10 since the rotation mechanism 158 (FIG. 3) rotates the brush 151, the liquid repellent 81 evenly soaks into the brush 151.
- the liquid repellent nozzle 171 discharges the liquid repellent 81 in a direction intersecting the rotation axis AX2.
- the liquid repellent nozzle 171 discharges the liquid repellent 81 in a direction substantially perpendicular to the rotation axis AX2.
- step S20 the brush 151 applies the liquid repellent agent 81 to the end surface 51 of the substrate W by contacting the end surface 51 of the rotating substrate W at the application position P1.
- the rotation mechanism 158 (FIG. 3) rotates the brush 151.
- the brush 151 applies the liquid repellent agent 81 to the end surface portion 51 of the substrate W while rotating.
- the liquid repellent agent 81 can be more reliably applied to the end surface portion 51 of the substrate W.
- the rotation direction of the substrate W and the rotation direction of the brush 151 are opposite to each other. Therefore, the liquid repellent agent 81 can be more reliably applied to the end surface portion 51 of the substrate W. Note that at the contact position between the end surface portion 51 of the substrate W and the brush 151, the rotation direction of the substrate W and the rotation direction of the brush 151 may be the same.
- step S30 the heating unit 20 dries the liquid repellent agent 81 applied to the end surface portion 51 (step S20) by heating the outer portion of the substrate W in the radial direction RD from below the substrate W.
- the solvent from the liquid repellent agent 81 evaporates, and the liquid repellent substance 82 adheres to the end surface portion 51 of the substrate W. That is, the heating unit 20 dries the liquid repellent agent 81 and causes the liquid repellent substance 82 in the liquid repellent agent 81 to adhere to the end surface portion 51 of the substrate W.
- the substrate W having the liquid repellent substance 82 attached to the end surface portion 51 is carried into the processing unit 1 (FIG. 1). Then, the back surface nozzle 8 (FIG. 1) discharges the processing liquid onto the back surface A2 of the substrate W.
- the liquid repellent substance 82 attached to the end surface portion 51 of the substrate W repels the processing liquid, so that it is possible to suppress the processing liquid from going around from the back surface A2 of the substrate W to the front surface A1.
- the pattern formed on the front surface A1 of the substrate W can be prevented from being influenced by the processing liquid discharged onto the back surface A2.
- the liquid-repellent substance 82 attached to the end surface portion 51 of the substrate W is a polymer compound. Therefore, there is no need to remove the liquid repellent material 82. This is because the liquid repellent substance 82 exists only on the end surface portion 51.
- FIG. 5A is a cross-sectional view showing the substrate W and the brush 151.
- FIG. 5(b) is a cross-sectional view showing a state in which the side surface portion 515 of the substrate W is coated with the liquid repellent agent 81.
- FIG. 5C is a cross-sectional view showing a state in which the liquid repellent agent 81 is applied to the front shoulder portion 512, the side surface portion 515, and the back shoulder portion 514 of the substrate W.
- 5(a) to 5(c) show enlarged cross-sections of the outer portions of the substrate W in the radial direction RD.
- FIG. 6 is a plan view showing a part of the substrate W. In FIG. 6, the surface A1 of the outer portion in the radial direction RD of the substrate W is shown in an enlarged manner.
- the substrate W includes a main body 50 (hereinafter referred to as "substrate main body 50") and an end surface portion 51.
- the substrate body 50 indicates a portion of the substrate W excluding the end surface portion 51.
- the substrate main body 50 indicates a portion of the substrate W that is inner than the end surface portion 51 in the radial direction RD.
- the substrate body 50 represents a substantially flat portion of the substrate W along the radial direction RD.
- a pattern is formed on the substrate body 50.
- a pattern is formed on the substrate body 50 on the surface A1 side of the substrate W.
- a pattern may be formed on the substrate body 50 on the back surface A2 side of the substrate W.
- the substrate main body 50 has a substantially disk shape.
- the boundary between the substrate body 50 and the end face portion 51 is shown by a broken line.
- the substrate main body 50 includes a main body front surface peripheral portion 501 and a main body back surface peripheral portion 502.
- the main body surface peripheral portion 501 indicates a peripheral region of the surface A1 of the substrate main body 50.
- the main body back surface peripheral portion 502 indicates a peripheral region of the back surface A2 of the substrate main body 50.
- Each of the main body front surface peripheral portion 501 and the main body back surface peripheral portion 502 is a substantially annular region around the rotation axis AX1 (FIG. 2).
- the width in the radial direction RD of each of the main body front peripheral edge 501 and the main body back peripheral edge 502 is, for example, 1 mm or more and 4 mm or less.
- the end surface portion 51 indicates a portion of the substrate W that is outside the substrate body 50 in the radial direction RD. In other words, the end surface portion 51 indicates an end surface region of the substrate W that is outside the substrate main body 50 in the radial direction RD. In other words, the end surface portion 51 indicates an end surface region of the substrate W that is outside the main body front surface peripheral portion 501 and the main body back surface peripheral portion 502 in the radial direction RD.
- the end surface portion 51 has a front edge 511 , a front shoulder 512 , a side surface 515 , a back shoulder 514 , and a back edge 513 .
- the surface edge portion 511 is located on the surface A1 side of the surface A1 and the back surface A2 of the substrate W, and is located on the outer side of the substrate body 50 in the radial direction RD.
- the surface edge 511 is a substantially annular region around the rotation axis AX1 (FIG. 2).
- the surface edge portion 511 surrounds the substrate body 50 (specifically, the body surface peripheral portion 501) in the circumferential direction CD in a plan view.
- the surface edge portion 511 includes an inclined surface that is inclined with respect to the surface A1 of the substrate body 50 from the body surface peripheral portion 501 toward the surface shoulder portion 512 in a cross-sectional view. Surface edge 511 connects body surface periphery 501 and surface shoulder 512 .
- the surface shoulder portion 512 is located on the outer side of the surface edge portion 511 in the radial direction RD on the surface A1 side.
- the surface shoulder portion 512 is a substantially annular region around the rotation axis AX1 (FIG. 2).
- the surface shoulder portion 512 surrounds the surface edge portion 511 in the circumferential direction CD in a plan view.
- the surface shoulder portion 512 includes a curved surface that curves from the surface edge portion 511 toward the side surface portion 515 in a cross-sectional view. Surface shoulder 512 connects surface edge 511 and side surface 515 .
- the back edge 513 is located on the outer side of the substrate body 50 in the radial direction RD on the back A2 side.
- the back edge 513 is a substantially annular region around the rotation axis AX1 (FIG. 2).
- the back edge 513 surrounds the substrate body 50 (specifically, the main body back peripheral edge 502) in the circumferential direction CD in plan view.
- the back edge 513 includes an inclined surface that is inclined with respect to the back surface A2 of the substrate body 50 from the main body back peripheral edge 502 toward the back shoulder 514 in a cross-sectional view.
- the back edge 513 connects the main body back peripheral edge 502 and the back shoulder 514 .
- the back shoulder portion 514 is located on the outer side of the back surface edge 513 in the radial direction RD on the back surface A2 side.
- the back shoulder portion 514 is a substantially annular region around the rotation axis AX1 (FIG. 2).
- the back edge 513 surrounds the back edge 513 in the circumferential direction CD in plan view.
- the back shoulder 514 includes a curved surface that curves from the back edge 513 toward the side surface 515 in cross-sectional view. Back shoulder 514 connects back edge 513 and side surface 515 .
- the side surface portion 515 is located at the outermost side of the substrate W in the radial direction RD.
- the side surface portion 515 is a substantially annular region around the rotation axis AX1 (FIG. 2).
- the side surface portion 515 surrounds the front shoulder portion 512 and the back shoulder portion 514 in the circumferential direction CD in a plan view.
- Side portion 515 includes a flat surface extending from front shoulder portion 512 toward back shoulder portion 514 in cross-sectional view.
- the side surface portion 515 has a substantially cylindrical shape around the rotation axis AX1. Side surface portion 515 connects front shoulder portion 512 and back shoulder portion 514 .
- the brush 151 preferably contacts only the side surface portion 515 to apply the liquid repellent agent 81 to the side surface portion 515, as shown in FIG. 5(b). Therefore, during the application of the liquid repellent agent 81 by the brush 151, it is possible to reliably prevent the liquid repellent agent 81 from entering the main body surface peripheral portion 501 and the main body rear surface peripheral portion 502. As a result, application of excess liquid repellent agent 81 to substrate body 50 can be more effectively suppressed. Moreover, since the liquid repellent agent 81 does not enter the main body front peripheral edge 501 and the main body back peripheral edge 502, a pattern can also be formed on the main body front peripheral edge 501 and the main body back peripheral edge 502.
- the brush 151 contacts the front shoulder 512, the side surface 515, and the back shoulder 514, and the brush 151 contacts the front shoulder 512, the side surface 515, and the back shoulder 514, and 514 may be coated with a liquid repellent agent 81.
- a liquid repellent agent 81 Even in this case, since the front edge 511 and the back edge 513 are present, it is possible to prevent the liquid repellent 81 from entering the main body front peripheral edge 501 and the main body back peripheral edge 502 during application of the liquid repellent 81 by the brush 151. .
- control unit 21 adjusts the biasing force (pushing pressure) by the biasing mechanism 159 and elastically deforms the brush 151 so that the brush 151 is attached to the front shoulder portion 512, the side surface portion 515, and the back shoulder portion 514. bring into contact.
- the brush 151 can be applied to the front edge 511, front shoulder 512, side surface 515, back shoulder 514, and A liquid repellent may be applied to the front edge 511 , the front shoulder 512 , the side surface 515 , the back shoulder 514 , and the back edge 513 in contact with the back edge 513 .
- the length Lb of the brush 151 in the axial direction AD is longer than the thickness d of the substrate W in the axial direction AD.
- the thickness d of the substrate W is 765 ⁇ m
- the length Lb of the brush 151 is 800 ⁇ m.
- the radius of curvature of the front shoulder portion 512 is 270 ⁇ m
- the length L0 in the axial direction AD of the side surface portion 515 is 228 ⁇ m
- the radius of curvature of the back shoulder portion 514 is 238 ⁇ m.
- the length L1 is 314 ⁇ m
- the length L2 is 323 ⁇ m.
- the length L1 indicates the distance along the radial direction RD from the radially RD inner end of the surface edge 511 to the radially RD outer end (side surface portion 515) of the surface shoulder 512.
- the length L2 indicates the distance along the radial direction RD from the radial direction RD inner end of the back surface edge 513 to the radial direction RD outer end (side surface portion 515) of the back surface shoulder portion 514.
- the surface edge portion 511 has an inclination angle ⁇ 1 with respect to the main body surface peripheral portion 501.
- the back edge 513 has an inclination angle ⁇ 2 with respect to the main body back peripheral edge 502.
- the inclination angle ⁇ 1 is 22.3 degrees
- the inclination angle ⁇ 2 is 23.3 degrees.
- FIG. 7 is a plan view showing the substrate W.
- the substrate W may have a notch 52.
- the notch 52 is a recessed portion recessed inward in the radial direction RD from the end surface portion 51 of the substrate W in plan view.
- the width of the notch 52 in the circumferential direction CD becomes smaller toward the inner side in the radial direction RD.
- FIG. 8 is a plan view showing a state in which the brush 151 is in contact with the notch 52.
- the brush 151 enters the notch 52 present in the end surface portion 51 of the substrate W and comes into contact with the bottom point BM of the notch 52. Therefore, according to the present embodiment, as in the case of the end surface portion 51, while avoiding the liquid repellent from entering the substrate main body 50 (specifically, the main body front surface peripheral portion 501 and the main body back surface peripheral portion 502), A liquid repellent can be applied to the notch 52.
- the entire brush 151 has entered the notch 52 in plan view. However, as long as the brush 151 contacts the bottom point BM of the notch 52, a part of the brush 151 may enter the notch 52 in plan view.
- the diameter 2R of the brush 151 is smaller than the maximum width L of the notch 52 in the circumferential direction CD.
- "R" indicates the radius of the brush 151 in plan view.
- the brush 151 is approximately circular in cross-sectional view.
- the cross-sectional view in this case shows that the brush 151 is cut along a virtual plane perpendicular to the rotation axis AX2 (FIG. 3).
- the radius R and the diameter 2R of the brush 151 respectively indicate the radius and diameter of the brush 151 in a cross-sectional view.
- the diameter 2R of the brush 151 is smaller than the depth D of the notch 52 in the radial direction RD. Therefore, the entire brush 151 fits inside the notch 52 in plan view. Since the substrate W rotates in the rotation direction D1, the brush 151 moves relative to the notch 52. Therefore, the liquid repellent can be applied to the entire notch 52.
- the biasing mechanism 159 biases the brush 151 toward the inside of the substrate W in the radial direction RD. Therefore, when the brush 151 is located in the notch 52 due to the rotation of the substrate W, the brush 151 quickly enters the notch 52. As a result, the liquid repellent can be applied to the notch 52 more reliably.
- the width L of the notch 52 is expressed by equation (1).
- Rw indicates the radius of the substrate W.
- ⁇ indicates the central angle with respect to the notch 52.
- the unit of the central angle ⁇ is "degrees”.
- FIG. 9 is a plan view showing the brush 151 and the notch 52.
- the x and y coordinates are defined with the bottom point BM of the notch 52 as the origin 0.
- the notch 52 is approximated by a parabola y. Therefore, notch 52 is represented by equation (2).
- the coefficient a in equation (2) is given by equation (3).
- the radius of curvature R0 at the origin 0 is set to the radius R of the brush 151.
- the brush 151 can be reliably entered into the notch 52, and the liquid repellent can be reliably applied to the notch 52.
- the maximum value Rmx and minimum value Rmn of the radius R of the brush 151 are calculated.
- the radius R of the brush 151 is set to 1.61 mm or more and 2.86 mm or less.
- the substrate processing method includes a liquid repellent coating method.
- FIG. 10 is a flowchart showing the substrate processing method according to this embodiment. As shown in FIG. 10, the substrate processing method includes steps S1 to S10. Steps S1 to S10 are executed by the substrate processing apparatus 100.
- step S1 the liquid repellent supply unit 17 (FIG. 2) supplies a liquid repellent to the brush 151 while rotating the brush 151 located at the standby position P2 (FIG. 2).
- the control unit 21 controls the rotation mechanism 158 (FIG. 3) so that the brush 151 rotates on its axis.
- the rotation mechanism 158 causes the brush 151 to rotate.
- the control unit 21 controls the liquid repellent supply unit 17 to supply the liquid repellent to the brush 151.
- the liquid repellent supply unit 17 supplies the liquid repellent to the brush 151.
- the rotation of the brush 151 and the supply of the liquid repellent may be performed at the same time, or the rotation may be performed first and the liquid repellent may be supplied after, or the rotation may be performed and the liquid repellent may be supplied first. Note that when the supply of the liquid repellent agent to the brush 151 is completed, the rotation mechanism 158 stops the rotation of the brush 151.
- step S2 the control unit 21 controls the central robot CR (FIG. 1) to carry the substrate W into the liquid repellent coating unit 5.
- the center robot CR carries the substrate W into the liquid repellent application unit 5 and causes the spin chuck 13 (FIG. 3) to hold the substrate W.
- step S3 the control unit 21 controls the spin chuck 13 to rotate the substrate W. As a result, the spin chuck 13 rotates the substrate W.
- step S4 the brush 151 contacts the end surface portion 51 of the rotating substrate W while rotating, and applies a liquid repellent to the end surface portion 51 of the substrate W.
- control unit 21 controls the rotation mechanism 158 so that the brush 151 rotates on its own axis. As a result, the rotation mechanism 158 causes the brush 151 to rotate.
- the control unit 21 then controls the swing arm 152 (FIG. 3) so that the brush 151 moves from the standby position P2 to the application position P1 (FIG. 2). As a result, the swing arm 152 moves the brush 151 from the standby position P2 to the application position P1. That is, the control unit 21 controls the swing arm 152 so that the rotating brush 151 contacts the end surface portion 51 of the substrate W. As a result, the swing arm 152 brings the rotating brush 151 into contact with the end surface portion 51 of the substrate W.
- the liquid repellent agent is applied to the end surface portion 51 of the substrate W.
- the swing arm 152 moves the brush 151 to the standby position P2, and the rotation mechanism 158 stops the rotation of the brush 151.
- step S5 the control unit 21 controls the heating unit 20 (FIG. 3) to heat the liquid repellent agent attached to the substrate W.
- the heating unit 20 heats the liquid repellent and dries the liquid repellent.
- the liquid repellent substance contained in the liquid repellent agent adheres to the end surface portion 51 of the substrate W.
- step S6 the control unit 21 controls the spin chuck 13 to stop the rotation of the substrate W. As a result, the spin chuck 13 stops rotating the substrate W.
- step S7 the control unit 21 controls the central robot CR to carry out the substrate W from the liquid repellent coating unit 5.
- the center robot CR carries out the substrate W from the liquid repellent application unit 5.
- step S8 the control unit 21 controls the central robot CR to carry the substrate W with the liquid-repellent substance adhered to the end surface portion 51 into the processing unit 1 (FIG. 1). As a result, the central robot CR carries the substrate W into the processing unit 1.
- step S9 the control unit 21 controls the processing unit 1 to process the substrate W with the processing liquid.
- the processing unit 1 processes the substrate W using the processing liquid.
- the back surface nozzle 8 (FIG. 1) of the processing unit 1 processes the back surface A2 of the substrate W by discharging a processing liquid onto the back surface A2 of the substrate W.
- the surface nozzle 7 (FIG. 1) of the processing unit 1 processes the surface A1 of the substrate W by discharging a processing liquid onto the surface A1 of the substrate W.
- step S10 the control unit 21 controls the central robot CR to carry out the substrate W from the processing unit 1.
- the center robot CR carries out the substrate W from the processing unit 1. Then, the process ends.
- the liquid repellent agent is applied to the end surface portion 51 of the substrate W. Coating (Step S4). Therefore, since the liquid repellent can be prevented from scattering, an extra liquid repellent suction step is not necessary. Therefore, while suppressing an increase in the number of processing steps, it is possible to suppress excessive liquid repellent from being applied to portions other than the end surface portion 51 of the substrate W.
- the processing liquid is discharged onto the back surface A2 of the substrate W in step S9, for example, it is possible to suppress the processing liquid from going around to the front surface A1 of the substrate W.
- a liquid repellent agent to the end surface portion 51 of the substrate W in step S4 and drying the liquid repellent agent on the end surface portion 51 of the substrate W in step S5, the liquid repellent material adheres to the end surface portion 51 of the substrate W.
- the brush 151 was rotated by the rotation mechanism 158. However, the brush 151 may rotate following the substrate W. Note that the brush 151 does not need to rotate as long as the liquid repellent can be applied to the end surface portion 51 of the substrate W.
- the processing unit 1 processed the substrate W with the processing liquid.
- the liquid repellent applying unit 5 may treat the substrate W with the treatment liquid.
- the liquid repellent coating unit 5 includes a nozzle that discharges the processing liquid onto the substrate W.
- the liquid repellent application unit 5 may include a front surface nozzle 7 and/or a back surface nozzle 8.
- the shape of the brush 151 is not particularly limited. It is sufficient that at least a portion of the brush 151 that contacts the end surface portion 51 of the substrate W has, for example, a substantially disk shape or a substantially cylindrical shape.
- the radius R of the brush 151 for which the radius of curvature R0 is set indicates the radius of the portion of the brush 151 that contacts the end surface portion 51 of the substrate W.
- the brush 151 may have an integral shape in which a substantially inverted truncated conical portion, a substantially disc-shaped portion, and a substantially truncated conical portion are lined up in the axial direction AD.
- the spin chuck 13 described with reference to FIG. 3 is of a vacuum suction type, it may be of a clamping type or a Bernoulli type, for example.
- the present invention is suitably used in a substrate processing apparatus and a substrate processing method.
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Abstract
This substrate treatment device (100) comprises a substrate holding part (13) and a coating member (151). The substrate holding part (13) causes a substrate (W) to rotate while holding the substrate (W). The coating member (151), by coming into contact with an end surface part (51) located on the outer side in a radial direction (RD) of the substrate (W) being rotated, coats the end surface part (51) of the substrate (W) with a repellent which contains a liquid-repelling substance capable of repelling a treatment liquid for treating the substrate (W).
Description
本発明は、基板処理装置及び基板処理方法に関する。
The present invention relates to a substrate processing apparatus and a substrate processing method.
特許文献１に記載された基板処理装置は、周縁部用処理ヘッドを備える。周縁部用処理ヘッドは、スピンチャックに保持される基板の表面周縁部に対する処理を行う。周縁部用処理ヘッドは、吸引管を備える。吸引管は、表面周縁部上の余分な処理液を吸引する。
The substrate processing apparatus described in Patent Document 1 includes a peripheral edge processing head. The peripheral edge processing head processes the peripheral edge of the surface of the substrate held by the spin chuck. The peripheral treatment head includes a suction tube. A suction tube suctions excess processing liquid on the surface periphery.
しかしながら、特許文献１の基板処理装置では、吸引管による吸引工程が必須となる。従って、処理工程が増加する。一方、本願の発明者は、処理液を弾くことの可能な撥液剤を、基板の径方向の端面部に塗布する処理に着目した。
However, in the substrate processing apparatus of Patent Document 1, a suction process using a suction tube is essential. Therefore, the number of processing steps increases. On the other hand, the inventors of the present application focused on a process of applying a liquid repellent agent capable of repelling the processing liquid to the radial end surface portion of the substrate.
本発明は、上記課題に鑑みてなされたものであり、その目的は、処理工程の増加を抑制しつつ、基板の端面部以外の部分に余分な撥液剤が塗布されることを抑制できる基板処理装置及び基板処理方法を提供することにある。
The present invention has been made in view of the above-mentioned problems, and its purpose is to provide a substrate processing method that can suppress the application of excess liquid repellent to parts other than the end surface of the substrate while suppressing the increase in processing steps. An object of the present invention is to provide an apparatus and a substrate processing method.
本発明の一局面によれば、基板処理装置は、基板保持部と、塗布部材とを備える。基板保持部は、基板を保持しつつ前記基板を回転させる。塗布部材は、回転中の前記基板の径方向外側の端面部に接触することで、前記基板を処理する処理液を弾くことの可能な撥液物質を含む撥液剤を、前記基板の前記端面部に塗布する。
According to one aspect of the present invention, a substrate processing apparatus includes a substrate holding section and a coating member. The substrate holder rotates the substrate while holding the substrate. The application member is configured to apply a liquid repellent containing a liquid repellent substance capable of repelling a processing liquid for treating the substrate by contacting a radially outer end surface of the rotating substrate to the end surface of the substrate. Apply to.
本発明の一態様においては、前記塗布部材は、自転しながら、前記撥液剤を前記基板の前記端面部に塗布することが好ましい。
In one aspect of the present invention, it is preferable that the application member apply the liquid repellent to the end surface portion of the substrate while rotating.
本発明の一態様においては、前記基板の前記端面部は、表面縁部と、表面肩部と、側面部と、裏面肩部と、裏面縁部とを有することが好ましい。前記表面縁部は、前記基板の表面と裏面とのうちの前記表面側において、前記基板の本体よりも径方向外側に位置することが好ましい。前記表面肩部は、前記表面側において、前記表面縁部よりも径方向外側に位置することが好ましい。前記裏面縁部は、前記裏面側において、前記基板の前記本体よりも径方向外側に位置することが好ましい。前記裏面肩部は、前記裏面側において、前記裏面縁部よりも径方向外側に位置することが好ましい。前記側面部は、前記基板の径方向の最も外側に位置することが好ましい。前記塗布部材は、前記側面部に対して前記撥液剤を塗布することが好ましい。
In one aspect of the present invention, the end surface portion of the substrate preferably has a front edge, a front shoulder, a side surface, a back shoulder, and a back edge. It is preferable that the surface edge portion is located radially outward from the main body of the substrate on the front surface side of the front surface and the back surface of the substrate. The surface shoulder portion is preferably located radially outward from the surface edge portion on the surface side. It is preferable that the back edge portion is located radially outward from the main body of the substrate on the back side. It is preferable that the back shoulder portion is located radially outward from the back edge on the back side. Preferably, the side surface portion is located at the outermost position in the radial direction of the substrate. Preferably, the application member applies the liquid repellent to the side surface portion.
本発明の一態様においては、前記塗布部材は、前記表面肩部、前記側面部、及び、前記裏面肩部に対して、前記撥液剤を塗布することが好ましい。
In one aspect of the present invention, it is preferable that the application member apply the liquid repellent to the front shoulder, the side surface, and the back shoulder.
本発明の一態様においては、前記塗布部材の少なくとも一部は、前記基板の前記端面部に存在するノッチに進入し、前記ノッチの底点に接触することが好ましい。
In one aspect of the present invention, it is preferable that at least a portion of the application member enters a notch existing in the end surface portion of the substrate and contacts a bottom point of the notch.
本発明の一態様においては、基板処理装置は、付勢機構を更に備えることが好ましい。付勢機構は、前記塗布部材を前記基板の径方向内側に向けて付勢することが好ましい。
In one aspect of the present invention, the substrate processing apparatus preferably further includes a biasing mechanism. Preferably, the biasing mechanism biases the application member radially inward of the substrate.
本発明の一態様においては、基板処理装置は、撥液剤供給部を更に備えることが好ましい。撥液剤供給部は、前記塗布部材に対して前記撥液剤を供給することが好ましい。
In one aspect of the present invention, the substrate processing apparatus preferably further includes a liquid repellent supply section. It is preferable that the liquid repellent supply unit supplies the liquid repellent to the application member.
本発明の他の局面によれば、基板処理方法は、基板を保持しつつ前記基板を回転させる工程と、回転中の前記基板の径方向外側の端面部に塗布部材を接触させることで、前記基板を処理する処理液を弾くことの可能な撥液物質を含む撥液剤を、前記基板の前記端面部に塗布する工程とを含む。
According to another aspect of the present invention, the substrate processing method includes the steps of rotating the substrate while holding the substrate, and bringing an application member into contact with a radially outer end surface of the rotating substrate. The method includes the step of applying a liquid repellent containing a liquid repellent substance capable of repelling a processing liquid for processing the substrate to the end surface portion of the substrate.
本発明の一態様においては、前記撥液剤を塗布する前記工程では、前記塗布部材を自転させながら、前記撥液剤を前記基板の前記端面部に塗布することが好ましい。
In one aspect of the present invention, in the step of applying the liquid repellent, it is preferable that the liquid repellent is applied to the end surface portion of the substrate while rotating the application member.
本発明の一態様においては、前記基板の前記端面部は、表面縁部と、表面肩部と、側面部と、裏面肩部と、裏面縁部とを有することが好ましい。前記表面縁部は、前記基板の表面と裏面とのうちの前記表面側において、前記基板の本体よりも径方向外側に位置することが好ましい。前記表面肩部は、前記表面側において、前記表面縁部よりも径方向外側に位置することが好ましい。前記裏面縁部は、前記裏面側において、前記基板の前記本体よりも径方向外側に位置することが好ましい。前記裏面肩部は、前記裏面側において、前記裏面縁部よりも径方向外側に位置することが好ましい。前記側面部は、前記基板の径方向の最も外側に位置することが好ましい。前記撥液剤を塗布する前記工程では、前記側面部に対して前記撥液剤を塗布することが好ましい。
In one aspect of the present invention, the end surface portion of the substrate preferably has a front edge, a front shoulder, a side surface, a back shoulder, and a back edge. It is preferable that the surface edge portion is located radially outward from the main body of the substrate on the front surface side of the front surface and the back surface of the substrate. The surface shoulder portion is preferably located radially outward from the surface edge portion on the surface side. It is preferable that the back edge portion is located radially outward from the main body of the substrate on the back side. It is preferable that the back shoulder portion is located radially outward from the back edge on the back side. Preferably, the side surface portion is located at the outermost position in the radial direction of the substrate. In the step of applying the liquid repellent, it is preferable that the liquid repellent is applied to the side surface portion.
本発明の一態様においては、前記撥液剤を塗布する前記工程では、前記表面肩部、前記側面部、及び、前記裏面肩部に対して、前記撥液剤を塗布することが好ましい。
In one aspect of the present invention, in the step of applying the liquid repellent, it is preferable that the liquid repellent is applied to the front shoulder, the side surface, and the back shoulder.
本発明の一態様においては、前記撥液剤を塗布する前記工程では、前記塗布部材の少なくとも一部は、前記基板の前記端面部に存在するノッチに進入し、前記ノッチの底点に接触することが好ましい。
In one aspect of the present invention, in the step of applying the liquid repellent, at least a portion of the application member enters the notch present in the end surface portion of the substrate and contacts the bottom point of the notch. is preferred.
本発明の一態様においては、前記撥液剤を塗布する前記工程では、前記塗布部材を前記基板の径方向内側に向けて付勢することが好ましい。
In one aspect of the present invention, in the step of applying the liquid repellent, it is preferable that the application member is urged inward in the radial direction of the substrate.
本発明の一態様においては、基板処理方法は、前記塗布部材に対して前記撥液剤を供給する工程を更に含むことが好ましい。
In one aspect of the present invention, the substrate processing method preferably further includes a step of supplying the liquid repellent to the coating member.
本発明によれば、処理工程の増加を抑制しつつ、基板の端面部以外の部分に余分な撥液剤が塗布されることを抑制できる。
According to the present invention, it is possible to suppress an increase in the number of processing steps and to suppress excessive liquid repellent from being applied to portions other than the end face portions of the substrate.
以下、本発明の実施形態について、図面を参照しながら説明する。なお、図中、同一または相当部分については同一の参照符号を付して説明を繰り返さない。また、図中、理解を容易にするために、Ｘ軸、Ｙ軸、及び、Ｚ軸を適宜図示している。Ｘ軸、Ｙ軸、及びＺ軸は互いに直交し、Ｘ軸及びＹ軸は水平方向に平行であり、Ｚ軸は鉛直方向に平行である。なお、「平面視」は、鉛直上方から対象を見ることを示す。また、「平面図」は、鉛直上方から対象を見たときの図面を示す。
Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, in the drawings, the same or corresponding parts are given the same reference numerals and the description will not be repeated. Furthermore, in the drawings, the X-axis, Y-axis, and Z-axis are appropriately illustrated for easy understanding. The X-axis, Y-axis, and Z-axis are perpendicular to each other, the X-axis and Y-axis are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction. Note that "planar view" indicates viewing the object from vertically above. Moreover, a "plan view" refers to a drawing when an object is viewed from vertically above.
図１～図１０を参照して、本発明の実施形態に係る基板処理装置１００を説明する。まず、図１を参照して、基板処理装置１００を説明する。図１は、基板処理装置１００の内部を示す平面図である。図１に示す基板処理装置１００は、基板Ｗを処理する。基板Ｗには、例えば、複数の構造物を含むパターンが形成されている。
A substrate processing apparatus 100 according to an embodiment of the present invention will be described with reference to FIGS. 1 to 10. First, the substrate processing apparatus 100 will be explained with reference to FIG. FIG. 1 is a plan view showing the inside of the substrate processing apparatus 100. The substrate processing apparatus 100 shown in FIG. 1 processes a substrate W. For example, a pattern including a plurality of structures is formed on the substrate W.
基板Ｗは、例えば、半導体ウェハ（例えば、シリコンウェハ）、液晶表示装置用基板、プラズマディスプレイ用基板、電界放出ディスプレイ（Ｆｉｅｌｄ Ｅｍｉｓｓｉｏｎ Ｄｉｓｐｌａｙ：ＦＥＤ）用基板、光ディスク用基板、磁気ディスク用基板、光磁気ディスク用基板、フォトマスク用基板、セラミック基板、又は、太陽電池用基板である。以下、一例として、基板Ｗは、シリコンウェハである。
The substrate W may be, for example, a semiconductor wafer (for example, a silicon wafer), a liquid crystal display substrate, a plasma display substrate, a field emission display (FED) substrate, an optical disk substrate, a magnetic disk substrate, or a magneto-optical substrate. It is a disk substrate, a photomask substrate, a ceramic substrate, or a solar cell substrate. Hereinafter, as an example, the substrate W is a silicon wafer.
図１に示すように、基板処理装置１００は、複数のロードポートＬＰと、インデクサーロボットＩＲと、センターロボットＣＲと、複数の処理ユニット１と、制御装置２と、複数の流体ボックス３と、薬液キャビネット４と、撥液剤塗布ユニット５とを備える。
As shown in FIG. 1, the substrate processing apparatus 100 includes a plurality of load ports LP, an indexer robot IR, a center robot CR, a plurality of processing units 1, a control device 2, a plurality of fluid boxes 3, It includes a chemical solution cabinet 4 and a liquid repellent application unit 5.
ロードポートＬＰの各々は、複数枚の基板Ｗを積層して収容する。インデクサーロボットＩＲは、ロードポートＬＰとセンターロボットＣＲとの間で基板Ｗを搬送する。センターロボットＣＲは、インデクサーロボットＩＲと処理ユニット１との間、インデクサーロボットＩＲと撥液剤塗布ユニット５との間、又は、処理ユニット１と撥液剤塗布ユニット５との間で基板Ｗを搬送する。撥液剤塗布ユニット５は、基板Ｗに撥液剤を塗布する。撥液剤塗布ユニット５の詳細は後述する。
Each of the load ports LP accommodates a plurality of stacked substrates W. The indexer robot IR transports the substrate W between the load port LP and the center robot CR. The center robot CR transports the substrate W between the indexer robot IR and the processing unit 1, between the indexer robot IR and the liquid repellent coating unit 5, or between the processing unit 1 and the liquid repellent coating unit 5. do. The liquid repellent application unit 5 applies a liquid repellent to the substrate W. Details of the liquid repellent application unit 5 will be described later.
処理ユニット１の各々は、処理液によって基板Ｗを処理する。処理ユニット１の各々は、基板Ｗを１枚ずつ処理する枚葉型の装置である。具体的には、処理ユニット１は表面用ノズル７及び裏面用ノズル８を含む。表面用ノズル７は、基板Ｗの表面（上面）と裏面（下面）とのうち、基板Ｗの表面に処理液を供給して、基板Ｗの表面を処理する。裏面用ノズル８は、基板Ｗの裏面に処理液を供給して、基板Ｗの裏面を処理する。
Each of the processing units 1 processes a substrate W using a processing liquid. Each of the processing units 1 is a single-wafer type device that processes the substrates W one by one. Specifically, the processing unit 1 includes a front nozzle 7 and a back nozzle 8. The front surface nozzle 7 processes the front surface of the substrate W by supplying a processing liquid to the front surface of the substrate W, which is the front surface (upper surface) and the back surface (lower surface) of the substrate W. The backside nozzle 8 supplies a processing liquid to the backside of the substrate W to process the backside of the substrate W.
処理液は、薬液又はリンス液である。薬液は基板Ｗを処理するための液体である。薬液は、例えば、希フッ酸（ＤＨＦ）、フッ酸（ＨＦ）、バファードフッ酸（ＢＨＦ）、フッ化アンモニウム、ＨＦＥＧ（フッ酸とエチレングリコールとの混合液）、燐酸（Ｈ3ＰＯ4）、硫酸、酢酸、硝酸、塩酸、アンモニア水、過酸化水素水、有機酸（例えば、クエン酸、シュウ酸）、有機アルカリ（例えば、ＴＭＡＨ：テトラメチルアンモニウムハイドロオキサイド）、アンモニア過酸化水素水混合液（ＳＣ１）、塩酸過酸化水素水混合液（ＳＣ２）、イソプロピルアルコール（ＩＰＡ）、界面活性剤、又は、腐食防止剤である。
The processing liquid is a chemical liquid or a rinsing liquid. The chemical liquid is a liquid for treating the substrate W. Examples of chemical solutions include dilute hydrofluoric acid (DHF), hydrofluoric acid (HF), buffered hydrofluoric acid (BHF), ammonium fluoride, HFEG (mixture of hydrofluoric acid and ethylene glycol), phosphoric acid (H 3 PO 4 ), and sulfuric acid. , acetic acid, nitric acid, hydrochloric acid, aqueous ammonia, aqueous hydrogen peroxide, organic acids (e.g. citric acid, oxalic acid), organic alkalis (e.g. TMAH: tetramethylammonium hydroxide), aqueous ammonia/hydrogen peroxide mixture (SC1 ), a mixture of hydrochloric acid and hydrogen peroxide (SC2), isopropyl alcohol (IPA), a surfactant, or a corrosion inhibitor.
リンス液は、薬液、薬液による処理後副産物、及び／又は、異物を、基板Ｗから洗い流すための液体である。リンス液は、例えば、脱イオン水（ＤＩＷ：Ｄｅｉｏｎｉｚｅｄ Ｗａｔｅｒ）、炭酸水、電解イオン水、水素水、オゾン水、または、希釈濃度（例えば、１０ｐｐｍ～１００ｐｐｍ程度）の塩酸水である。
The rinsing liquid is a liquid for washing away a chemical solution, by-products after processing with the chemical solution, and/or foreign matter from the substrate W. The rinsing liquid is, for example, deionized water (DIW), carbonated water, electrolyzed ionized water, hydrogen water, ozone water, or hydrochloric acid water at a diluted concentration (for example, about 10 ppm to 100 ppm).
所定数の処理ユニット１（図１の例では３つの処理ユニット１）が鉛直方向に積層されて１つのタワーＴＷを構成している。ただし、図１の例では、複数のタワーＴＷ（図１の例では４つのタワーＴＷ）のうち、１つのタワーＴＷは、１つの処理ユニット１に代えて１つの撥液剤塗布ユニット５を含む。複数のタワーＴＷは、平面視においてセンターロボットＣＲを取り囲むように配置される。なお、撥液剤塗布ユニット５の配置は、特に限定されず、例えば、撥液剤塗布ユニット５は、基板処理装置１００における専用スペースに配置されていてもよいし、基板処理装置１００の外部に配置されていてもよい。また、基板処理装置１００は、複数の撥液剤塗布ユニット５を備えていてもよい。
A predetermined number of processing units 1 (three processing units 1 in the example of FIG. 1) are stacked vertically to form one tower TW. However, in the example of FIG. 1, one tower TW among the plurality of towers TW (four towers TW in the example of FIG. 1) includes one liquid repellent application unit 5 instead of one processing unit 1. The plurality of towers TW are arranged so as to surround the center robot CR in a plan view. Note that the arrangement of the liquid repellent application unit 5 is not particularly limited; for example, the liquid repellent application unit 5 may be arranged in a dedicated space in the substrate processing apparatus 100, or may be arranged outside the substrate processing apparatus 100. You can leave it there. Further, the substrate processing apparatus 100 may include a plurality of liquid repellent coating units 5.
複数の流体ボックス３の各々は流体機器を収容する。複数の流体ボックス３は、それぞれ、複数のタワーＴＷに対応している。薬液キャビネット４は薬液を収容する。薬液キャビネット４内の薬液は、いずれかの流体ボックス３を介して、流体ボックス３に対応するタワーＴＷに含まれる全ての処理ユニット１に供給される。
Each of the plurality of fluid boxes 3 accommodates a fluid device. Each of the plurality of fluid boxes 3 corresponds to the plurality of towers TW. The chemical liquid cabinet 4 accommodates chemical liquids. The chemical solution in the chemical solution cabinet 4 is supplied to all the processing units 1 included in the tower TW corresponding to the fluid box 3 via any one of the fluid boxes 3.
制御装置２は、ロードポートＬＰ、インデクサーロボットＩＲ、センターロボットＣＲ、処理ユニット１、流体ボックス３、薬液キャビネット４、及び、撥液剤塗布ユニット５を制御する。制御装置２は、例えば、コンピューターである。
The control device 2 controls the load port LP, indexer robot IR, center robot CR, processing unit 1, fluid box 3, chemical solution cabinet 4, and liquid repellent application unit 5. The control device 2 is, for example, a computer.
制御装置２は、制御部２１と、記憶部２２とを含む。制御部２１は、ＣＰＵ（Ｃｅｎｔｒａｌ Ｐｒｏｃｅｓｓｉｎｇ Ｕｎｉｔ）等のプロセッサーを含む。記憶部２２は、記憶装置を含み、データ及びコンピュータープログラムを記憶する。具体的には、記憶部２２は、半導体メモリー等の主記憶装置と、半導体メモリー、ソリッドステートドライブ、及び／又は、ハードディスクドライブ等の補助記憶装置とを含む。記憶部２２は、リムーバブルメディアを含んでいてもよい。記憶部２２は、非一時的コンピューター読取可能記憶媒体の一例に相当する。
The control device 2 includes a control section 21 and a storage section 22. The control unit 21 includes a processor such as a CPU (Central Processing Unit). The storage unit 22 includes a storage device and stores data and computer programs. Specifically, the storage unit 22 includes a main storage device such as a semiconductor memory, and an auxiliary storage device such as a semiconductor memory, a solid state drive, and/or a hard disk drive. The storage unit 22 may include removable media. The storage unit 22 corresponds to an example of a non-transitory computer-readable storage medium.
次に、図２を参照して、撥液剤塗布ユニット５を説明する。図２は、撥液剤塗布ユニット５の内部を示す平面図である。図２に示すように、撥液剤塗布ユニット５は、チャンバー１１と、スピンチャック１３と、撥液剤塗布機構１５と、撥液剤供給部１７と、液受け部１９とを備える。撥液剤供給部１７は、撥液剤ノズル１７１と、バルブ１７２と、配管１７３とを含む。制御部２１は、スピンチャック１３、撥液剤塗布機構１５、及び、撥液剤供給部１７を制御する。
Next, the liquid repellent coating unit 5 will be explained with reference to FIG. 2. FIG. 2 is a plan view showing the inside of the liquid repellent application unit 5. As shown in FIG. As shown in FIG. 2, the liquid repellent coating unit 5 includes a chamber 11, a spin chuck 13, a liquid repellent coating mechanism 15, a liquid repellent supply section 17, and a liquid receiving section 19. The liquid repellent supply unit 17 includes a liquid repellent nozzle 171, a valve 172, and a pipe 173. The control unit 21 controls the spin chuck 13, the liquid repellent application mechanism 15, and the liquid repellent supply unit 17.
チャンバー１１は略箱形状を有する。チャンバー１１は、スピンチャック１３、撥液剤塗布機構１５、撥液剤ノズル１７１、及び、液受け部１９を収容する。スピンチャック１３は、本発明の「基板保持部」の一例に相当する。
The chamber 11 has a substantially box shape. The chamber 11 accommodates the spin chuck 13 , the liquid repellent coating mechanism 15 , the liquid repellent nozzle 171 , and the liquid receiving section 19 . The spin chuck 13 corresponds to an example of the "substrate holder" of the present invention.
スピンチャック１３は、基板Ｗを保持しつつ基板Ｗを回転させる。具体的には、スピンチャック１３は、基板Ｗを略水平に保持しつつ、基板Ｗを回転軸線ＡＸ１の周りに回転させる。撥液剤塗布機構１５は、基板Ｗの径方向ＲＤ外側の端面部５１に撥液剤を塗布する。端面部５１は、基板Ｗのうち回転軸線ＡＸ１の周りの略円環状の部分である。本実施形態では、径方向ＲＤは水平方向に略平行である。また、径方向ＲＤは、回転軸線ＡＸ１に直交する。径方向ＲＤは、回転軸線ＡＸ１に対する径方向と捉えることもできる。なお、回転軸線ＡＸ１の周りの円周方向を周方向ＣＤと記載する場合がある。周方向ＣＤは、基板Ｗの周方向と捉えることもできる。
The spin chuck 13 rotates the substrate W while holding it. Specifically, the spin chuck 13 rotates the substrate W around the rotation axis AX1 while holding the substrate W substantially horizontally. The liquid repellent application mechanism 15 applies a liquid repellent to the end surface portion 51 of the substrate W on the outer side in the radial direction RD. The end surface portion 51 is a substantially annular portion of the substrate W around the rotation axis AX1. In this embodiment, the radial direction RD is approximately parallel to the horizontal direction. Further, the radial direction RD is orthogonal to the rotation axis AX1. The radial direction RD can also be regarded as the radial direction with respect to the rotation axis AX1. Note that the circumferential direction around the rotation axis AX1 may be referred to as a circumferential direction CD. The circumferential direction CD can also be regarded as the circumferential direction of the substrate W.
撥液剤は撥液物質を含む液体である。具体的には、撥液剤は、撥液物質を含む溶液である。撥液物質は、基板Ｗを処理する処理液を弾くことの可能な物質である。つまり、撥液物質は、基板Ｗよりも処理液を弾く性質を有する物質である。撥液物質は、撥液性を有する。撥液性とは、液体を弾く性質のことである。例えば、接触角が９０度以上の物質は、撥液物質である。
A liquid repellent is a liquid containing a liquid repellent substance. Specifically, the liquid repellent is a solution containing a liquid repellent substance. The liquid-repellent substance is a substance that can repel the processing liquid used to process the substrate W. In other words, the liquid-repellent substance is a substance that has a property of repelling the processing liquid more than the substrate W. The liquid repellent substance has liquid repellency. Liquid repellency is the property of repelling liquid. For example, a substance with a contact angle of 90 degrees or more is a liquid-repellent substance.
撥液剤は、溶媒と、溶質としての撥液物質との混合物である。溶媒は、例えば、水である。水は、例えば、リンス液と同じ液体である。撥液物質は、例えば、高分子化合物である。撥液物質は、好ましくは、非フッ素系撥液物質である。一例ではあるが、撥液物質として、日華化学製のネオシード（登録商標）を使用できる。なお、撥液剤は、ワックスであってもよい。
A liquid repellent is a mixture of a solvent and a liquid repellent substance as a solute. The solvent is, for example, water. Water is, for example, the same liquid as the rinse liquid. The liquid repellent substance is, for example, a polymer compound. The liquid repellent material is preferably a non-fluorine liquid repellent material. As an example, NeoSeed (registered trademark) manufactured by NICCA CHEMICAL CO., LTD. can be used as the liquid repellent material. Note that the liquid repellent may be wax.
撥液物質は、例えば、撥水物質である。撥水物質は、水を弾くことの可能な物質である。つまり、撥水物質は、基板Ｗよりも水を弾く性質を有する物質である。撥水物質は、撥水性を有する。撥水性とは、水を弾く性質のことである。例えば、接触角が９０度以上の物質は、撥水物質である。この場合の水は、例えば、リンス液と同じ液体である。撥液物質として、撥水物質を使用する場合、処理液が水溶液である場合に有効である。なお、撥液物質が撥水物質である場合は、撥液剤は撥水剤である。
The liquid-repellent substance is, for example, a water-repellent substance. A water-repellent substance is a substance that can repel water. In other words, the water-repellent material is a material that has a property of repelling water more than the substrate W. The water repellent substance has water repellency. Water repellency is the property of repelling water. For example, a substance with a contact angle of 90 degrees or more is a water-repellent substance. The water in this case is, for example, the same liquid as the rinse liquid. When a water-repellent substance is used as the liquid-repellent substance, it is effective when the treatment liquid is an aqueous solution. Note that when the liquid-repellent substance is a water-repellent substance, the liquid-repellent agent is a water-repellent agent.
撥液物質は、例えば、シリコン系撥液物質であってもよしい、アクリル系撥液物質であってもよい。シリコン系撥液物質は、シリコン自体、および、シリコンを含む化合物に撥液性を付与する。シリコン系撥液物質は、例えば、シランカップリング剤である。シランカップリング剤は、例えば、ＨＭＤＳ（ヘキサメチルジシラザン）、ＴＭＳ（テトラメチルシラン）、フッ素化アルキルクロロシラン、アルキルジシラザン、および非クロロ系疎水化剤の少なくとも一つを含む。非クロロ系疎水化剤は、例えば、ジメチルシリルジメチルアミン、ジメチルシリルジエチルアミン、ヘキサメチルジシラザン、テトラメチルジシラザン、ビス（ジメチルアミノ）ジメチルシラン、Ｎ，Ｎ－ジメチルアミノトリメチルシラン、Ｎ－（トリメチルシリル）ジメチルアミンおよびオルガノシラン化合物の少なくとも一つを含む。
The liquid-repellent material may be, for example, a silicon-based liquid-repellent material or an acrylic-based liquid-repellent material. The silicon-based liquid repellent substance imparts liquid repellency to silicon itself and to compounds containing silicon. The silicone-based liquid repellent substance is, for example, a silane coupling agent. The silane coupling agent includes, for example, at least one of HMDS (hexamethyldisilazane), TMS (tetramethylsilane), fluorinated alkylchlorosilane, alkyldisilazane, and a non-chloro hydrophobizing agent. Non-chloro hydrophobizing agents include, for example, dimethylsilyldimethylamine, dimethylsilyldiethylamine, hexamethyldisilazane, tetramethyldisilazane, bis(dimethylamino)dimethylsilane, N,N-dimethylaminotrimethylsilane, N-(trimethylsilyl ) Contains at least one of dimethylamine and an organosilane compound.
なお、撥液物質は、例えば、メタル系撥液物質であってもよい。メタル系撥液物質は、金属自体、および、金属を含む化合物に対して撥液性を付与する。メタル系撥液物質は、例えば、疎水基を有するアミン、および有機シリコン化合物の少なくとも一つを含む。
Note that the liquid-repellent material may be, for example, a metal-based liquid-repellent material. Metal-based liquid repellent substances provide liquid repellency to metals themselves and compounds containing metals. The metal-based liquid-repellent substance includes, for example, at least one of an amine having a hydrophobic group and an organic silicon compound.
具体的には、撥液剤塗布機構１５は、ブラシ１５１を含む。ブラシ１５１は、本発明の「塗布部材」の一例に相当する。
Specifically, the liquid repellent application mechanism 15 includes a brush 151. The brush 151 corresponds to an example of the "application member" of the present invention.
塗布位置Ｐ１において、ブラシ１５１は、基板Ｗの回転中に基板Ｗの径方向ＲＤ外側の端面部５１に接触することで、基板Ｗを処理する処理液を弾くことの可能な撥液物質を含む撥液剤を、基板Ｗの端面部５１に塗布する。従って、ノズル等によって撥液剤を基板Ｗに吐出する場合と比較して、基板Ｗの端面部５１以外の部分に余分な撥液剤が塗布されることを抑制できる。加えて、余分な撥液剤を吸引する吸引工程が不要である。よって、本実施形態によれば、処理工程の増加を抑制しつつ、基板Ｗの端面部５１以外の部分に余分な撥液剤が塗布されることを抑制できる。基板Ｗの端面部５１以外の部分は、例えば、基板Ｗにおいてパターンが形成されている部分である。なお、例えば、ノズル等によって撥液剤を塗布する場合には、ノズル等は基板Ｗに対して離隔しているため、ノズル等から撥液剤を吐出する際に、撥液剤が基板Ｗの端面部５１以外の部分に飛び散る可能性がある。
At the application position P1, the brush 151 includes a liquid-repellent material that can repel the processing liquid for processing the substrate W by contacting the end surface portion 51 on the outer side in the radial direction RD of the substrate W while the substrate W is rotating. A liquid repellent agent is applied to the end surface portion 51 of the substrate W. Therefore, compared to the case where the liquid repellent agent is discharged onto the substrate W using a nozzle or the like, it is possible to suppress the excessive liquid repellent agent from being applied to the portions other than the end surface portion 51 of the substrate W. In addition, there is no need for a suction step to suction excess liquid repellent. Therefore, according to the present embodiment, it is possible to suppress the application of excess liquid repellent to parts other than the end surface portion 51 of the substrate W while suppressing an increase in the number of processing steps. The portion of the substrate W other than the end surface portion 51 is, for example, a portion of the substrate W where a pattern is formed. Note that, for example, when applying a liquid repellent agent using a nozzle or the like, the nozzle or the like is spaced apart from the substrate W, so when the liquid repellent agent is discharged from the nozzle or the like, the liquid repellent agent touches the end surface portion 51 of the substrate W. There is a possibility that it will scatter to other parts.
塗布位置Ｐ１は、ブラシ１５１が基板Ｗの端面部５１に接触する位置を示す。一方、待機位置Ｐ２は、塗布位置Ｐ１よりも径方向ＲＤ外側の位置を示す。つまり、待機位置Ｐ２は、ブラシ１５１が基板Ｗから径方向ＲＤに離隔した位置を示す。待機位置Ｐ２の下方には、液受け部１９が配置される。液受け部１９は、例えば、ポットである。
The application position P1 indicates the position where the brush 151 contacts the end surface portion 51 of the substrate W. On the other hand, the standby position P2 indicates a position outside the application position P1 in the radial direction RD. That is, the standby position P2 indicates a position where the brush 151 is separated from the substrate W in the radial direction RD. A liquid receiver 19 is arranged below the standby position P2. The liquid receiving part 19 is, for example, a pot.
待機位置Ｐ２において、撥液剤供給部１７は、ブラシ１５１に対して撥液剤を供給する。従って、本実施形態によれば、撥液剤をブラシ１５１に効果的に染み込ませることができる。
At the standby position P2, the liquid repellent supply unit 17 supplies the liquid repellent to the brush 151. Therefore, according to this embodiment, the brush 151 can be effectively impregnated with the liquid repellent.
ブラシ１５１は、例えば、略円柱形状を有する。ブラシ１５１は、例えば、弾性を有する。ブラシ１５１は、例えば、多孔質物質を含む。この場合、例えば、ブラシ１５１は、スポンジ状であってもよい。ブラシ１５１は、撥液性を有することが好ましい。撥液剤が基板Ｗに転移し易くなるからである。ブラシ１５１の素材は、例えば、ＰＴＦＥ（ポリテトラフルオロエチレン）、又は、ＰＦＡ（テトラフルオロエチレン－パーフルオロアルキルビニルエーテル共重合体）である。なお、例えば、ブラシ１５１は、複数の部材を組み合わせて構成されてもよいし、複数の毛を含んでいてもよい。
The brush 151 has, for example, a substantially cylindrical shape. The brush 151 has elasticity, for example. Brush 151 includes, for example, a porous material. In this case, for example, the brush 151 may be spongy. It is preferable that the brush 151 has liquid repellency. This is because the liquid repellent agent is easily transferred to the substrate W. The material of the brush 151 is, for example, PTFE (polytetrafluoroethylene) or PFA (tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer). Note that, for example, the brush 151 may be configured by combining a plurality of members, or may include a plurality of bristles.
具体的には、撥液剤供給部１７において、撥液剤ノズル１７１が、待機位置Ｐ２に位置するブラシ１５１に対して撥液剤を吐出する。その結果、撥液剤がブラシ１５１に染み込む。
Specifically, in the liquid repellent supply unit 17, the liquid repellent nozzle 171 discharges the liquid repellent to the brush 151 located at the standby position P2. As a result, the liquid repellent soaks into the brush 151.
更に具体的には、撥液剤ノズル１７１には、配管１７３が接続される。配管１７３は、撥液剤を撥液剤ノズル１７１に供給する。配管１７３には、バルブ１７２が配置される。バルブ１７２は、配管１７３の流路を閉塞又は開放する。制御部２１は、バルブ１７２が配管１７３の流路を開放するように、バルブ１７２を制御する。その結果、バルブ１７２が配管１７３の流路を開放するため、撥液剤ノズル１７１は撥液剤をブラシ１５１に向けて吐出する。ブラシ１５１に染み込まなかった撥液剤は、液受け部１９に落下し、液受け部１９に溜る。
More specifically, a pipe 173 is connected to the liquid repellent nozzle 171. Piping 173 supplies the liquid repellent to the liquid repellent nozzle 171 . A valve 172 is arranged in the pipe 173. The valve 172 closes or opens the flow path of the pipe 173. The control unit 21 controls the valve 172 so that the valve 172 opens the flow path of the pipe 173. As a result, since the valve 172 opens the flow path of the pipe 173, the liquid repellent nozzle 171 discharges the liquid repellent towards the brush 151. The liquid repellent that has not soaked into the brush 151 falls into the liquid receiving part 19 and accumulates in the liquid receiving part 19.
次に、図３を参照して撥液剤塗布ユニット５を詳細に説明する。図３は、撥液剤塗布ユニット５の内部を示す側面図である。図３に示すように、撥液剤塗布ユニット５において、スピンチャック１３は、真空吸着式チャックである。具体的には、スピンチャック１３は、スピン軸１３１と、スピンベース１３２と、スピンモータ１３３とを含む。スピン軸１３１は、略鉛直方向に沿って延びる。スピンベース１３２は、略円板形状を有し、スピン軸１３１の上端に取り付けられる。そして、スピンベース１３２は、略水平な姿勢で基板Ｗを保持する。図３の例では、スピンベース１３２は、基板Ｗを略水平な姿勢で基板Ｗの裏面を吸着して保持する。スピンモータ１３３は、スピン軸１３１と同軸に結合された回転軸を有する。そして、スピンモータ１３３は、基板Ｗがスピンベース１３２に保持された状態で、スピン軸１３１の回転軸線ＡＸ１の周りに基板Ｗを回転させる。
Next, the liquid repellent coating unit 5 will be described in detail with reference to FIG. 3. FIG. 3 is a side view showing the inside of the liquid repellent application unit 5. As shown in FIG. As shown in FIG. 3, in the liquid repellent application unit 5, the spin chuck 13 is a vacuum suction type chuck. Specifically, the spin chuck 13 includes a spin shaft 131, a spin base 132, and a spin motor 133. The spin axis 131 extends substantially vertically. The spin base 132 has a substantially disk shape and is attached to the upper end of the spin shaft 131. The spin base 132 holds the substrate W in a substantially horizontal position. In the example of FIG. 3, the spin base 132 attracts and holds the back surface of the substrate W in a substantially horizontal position. The spin motor 133 has a rotation shaft coaxially coupled to the spin shaft 131. Then, the spin motor 133 rotates the substrate W around the rotation axis AX1 of the spin shaft 131 while the substrate W is held on the spin base 132.
撥液剤塗布ユニット５は、加熱部２０を更に備える。加熱部２０は、制御部２１による制御の下、基板Ｗの裏面側から、基板Ｗの径方向ＲＤ外側部分を加熱する。加熱部２０は、スピンチャック１３よりも径方向ＲＤ外側に配置される。加熱部２０は、基板Ｗよりも下方に配置される。具体的には、加熱部２０は、基板Ｗの径方向ＲＤ外側部分の下方に配置される。図３の例では、加熱部２０は、回転軸線ＡＸ１の周りに延びる略円環形状を有する。加熱部２０は、例えば、ヒーターである。なお、回転軸線ＡＸ１に沿った方向を軸方向ＡＤと記載する場合がある。軸方向ＡＤは、基板Ｗに直交し、鉛直方向に略平行である。
The liquid repellent application unit 5 further includes a heating section 20. The heating unit 20 heats the outer portion of the substrate W in the radial direction RD from the back side of the substrate W under the control of the control unit 21 . The heating unit 20 is arranged outside the spin chuck 13 in the radial direction RD. The heating unit 20 is arranged below the substrate W. Specifically, the heating unit 20 is disposed below the outer portion of the substrate W in the radial direction RD. In the example of FIG. 3, the heating section 20 has a substantially annular shape extending around the rotation axis AX1. The heating unit 20 is, for example, a heater. Note that the direction along the rotation axis AX1 may be referred to as the axial direction AD. The axial direction AD is perpendicular to the substrate W and substantially parallel to the vertical direction.
撥液剤塗布機構１５は、制御部２１による制御の下、ブラシ１５１を水平方向に沿って揺動させたり、ブラシ１５１を昇降させたりする。撥液剤塗布機構１５は、ブラシ１５１を塗布位置Ｐ１（図２）と待機位置Ｐ２（図２）との間で移動させる。
The liquid repellent application mechanism 15 swings the brush 151 along the horizontal direction and moves the brush 151 up and down under the control of the control unit 21. The liquid repellent application mechanism 15 moves the brush 151 between the application position P1 (FIG. 2) and the standby position P2 (FIG. 2).
具体的には、撥液剤塗布機構１５は、揺動アーム１５２と、揺動機構１５３と、昇降機構１５４と、アーム基軸１５５とを含む。揺動アーム１５２の水平方向一方側の先端には、ブラシ１５１が取り付けられる。そして、揺動アーム１５２は、ブラシ１５１を略水平方向に沿って揺動させたり、ブラシ１５１を昇降させたりする。
Specifically, the liquid repellent application mechanism 15 includes a swinging arm 152, a swinging mechanism 153, a lifting mechanism 154, and an arm pivot 155. A brush 151 is attached to the tip of the swing arm 152 on one side in the horizontal direction. The swing arm 152 swings the brush 151 substantially horizontally, and moves the brush 151 up and down.
更に具体的には、揺動機構１５３は、制御部２１による制御の下、揺動アーム１５２を揺動軸線ＡＸ３の周りに略水平方向に沿って揺動させる。詳細には、アーム基軸１５５の上端部が、揺動アーム１５２の水平方向他方側に結合される。揺動機構１５３の駆動力は、アーム基軸１５５に入力される。揺動機構１５３の駆動力をアーム基軸１５５に入力することで、アーム基軸１５５を往復回転させて、揺動アーム１５２を、アーム基軸１５５を支点に揺動させる。揺動機構１５３は、例えば、モーターを含む。
More specifically, the swing mechanism 153 swings the swing arm 152 approximately in the horizontal direction around the swing axis AX3 under the control of the control unit 21. Specifically, the upper end of the arm base shaft 155 is coupled to the other side of the swing arm 152 in the horizontal direction. The driving force of the swing mechanism 153 is input to the arm base shaft 155. By inputting the driving force of the swinging mechanism 153 to the arm base shaft 155, the arm base shaft 155 is reciprocated and the swing arm 152 is swung about the arm base shaft 155 as a fulcrum. The swing mechanism 153 includes, for example, a motor.
また、昇降機構１５４は、制御部２１による制御の下、揺動アーム１５２を昇降させる。詳細には、アーム基軸１５５に、昇降機構１５４が結合されている。昇降機構１５４は、アーム基軸１５５を上下動させて、アーム基軸１５５と一体的に揺動アーム１５２を上下動させる。昇降機構１５４は、例えば、ボールねじ機構と、ボールねじ機構に駆動力を与えるモーターとを含む。
Further, the lifting mechanism 154 raises and lowers the swing arm 152 under the control of the control unit 21. Specifically, a lifting mechanism 154 is coupled to the arm base shaft 155. The elevating mechanism 154 moves the arm base shaft 155 up and down, and moves the swing arm 152 up and down integrally with the arm base shaft 155. The elevating mechanism 154 includes, for example, a ball screw mechanism and a motor that provides driving force to the ball screw mechanism.
具体的には、揺動アーム１５２は、アーム本体１５６と、支持軸１５７と、自転機構１５８とを含む。アーム本体１５６は、中空であり、略水平方向に延びる。アーム本体１５６は、揺動機構１５３によって略水平方向に沿って揺動する。アーム本体１５６は、昇降機構１５４によって昇降する。支持軸１５７は、アーム本体１５６の水平方向一方側に位置し、略水平方向に突出する。自転機構１５８は、支持軸１５７に支持される。自転機構１５８の下端部には、ブラシ１５１が取り付けられる。
Specifically, the swing arm 152 includes an arm main body 156, a support shaft 157, and a rotation mechanism 158. The arm body 156 is hollow and extends substantially horizontally. The arm body 156 swings approximately horizontally by the swing mechanism 153. The arm main body 156 is raised and lowered by the raising and lowering mechanism 154. The support shaft 157 is located on one horizontal side of the arm body 156 and protrudes substantially horizontally. The rotation mechanism 158 is supported by a support shaft 157. A brush 151 is attached to the lower end of the rotation mechanism 158.
自転機構１５８は、制御部２１による制御の下、回転軸線ＡＸ２の周りにブラシ１５１を回転させる。つまり、自転機構１５８は、ブラシ１５１を自転させる。具体的には、自転機構１５８は、ブラシモーター１６０と、ブラシホルダー１６２とを含む。ブラシモーター１６０の出力軸１６１は、鉛直下方に向けて延びている。つまり、出力軸１６１は、軸方向ＡＤに沿って下方に延びている。出力軸１６１の下端部には、ブラシホルダー１６２が取り付けられる。ブラシホルダー１６２は、ブラシ１５１を保持する。ブラシモーター１６０は、出力軸１６１を回転させることで、ブラシホルダー１６２と共にブラシ１５１を回転軸線ＡＸ２の周りに回転させる。本実施形態では、回転軸線ＡＸ２は回転軸線ＡＸ１と略平行である。従って、軸方向ＡＤは、回転軸線ＡＸ２に略平行である。
The rotation mechanism 158 rotates the brush 151 around the rotation axis AX2 under the control of the control unit 21. In other words, the rotation mechanism 158 causes the brush 151 to rotate. Specifically, the rotation mechanism 158 includes a brush motor 160 and a brush holder 162. The output shaft 161 of the brush motor 160 extends vertically downward. That is, the output shaft 161 extends downward along the axial direction AD. A brush holder 162 is attached to the lower end of the output shaft 161. Brush holder 162 holds brush 151. The brush motor 160 rotates the brush holder 162 and the brush 151 around the rotation axis AX2 by rotating the output shaft 161. In this embodiment, the rotation axis AX2 is substantially parallel to the rotation axis AX1. Therefore, the axial direction AD is approximately parallel to the rotation axis AX2.
また、揺動アーム１５２は付勢機構１５９を更に含む。付勢機構１５９は、制御部２１による制御の下、支持軸１５７及び自転機構１５８を介して、ブラシ１５１を基板Ｗの径方向ＲＤ内側に向けて付勢する。具体的には、付勢機構１５９は、基板Ｗの端面部５１に対するブラシ１５１の径方向ＲＤの押し圧を予め設定された押し圧に保持する。押し圧は、径方向ＲＤにおいて端面部５１にブラシ１５１を押し付けるときの圧力である。例えば、付勢機構１５９は、エアシリンダーによって支持軸１５７を径方向ＲＤに沿って駆動することで、ブラシ１５１を基板Ｗの径方向ＲＤ内側に向けて付勢する。
Further, the swing arm 152 further includes a biasing mechanism 159. The biasing mechanism 159 biases the brush 151 toward the inside of the substrate W in the radial direction RD via the support shaft 157 and the rotation mechanism 158 under the control of the control unit 21 . Specifically, the biasing mechanism 159 maintains the pressing force of the brush 151 in the radial direction RD against the end surface portion 51 of the substrate W at a preset pressing force. The pressing force is the pressure when pressing the brush 151 against the end surface portion 51 in the radial direction RD. For example, the biasing mechanism 159 biases the brush 151 toward the inside of the substrate W in the radial direction RD by driving the support shaft 157 along the radial direction RD using an air cylinder.
次に、図４を参照して、本実施形態に係る撥液剤塗布方法を説明する。撥液剤塗布方法は、本実施形態に係る基板処理方法の一部を構成する。図４は、本実施形態に係る撥液剤塗布方法を示す図である。
Next, the liquid repellent application method according to this embodiment will be described with reference to FIG. 4. The liquid repellent coating method constitutes a part of the substrate processing method according to this embodiment. FIG. 4 is a diagram showing a liquid repellent application method according to the present embodiment.
図４に示すように、撥液剤塗布方法は、工程Ｓ１０、工程Ｓ２０、及び、工程Ｓ３０を含む。
As shown in FIG. 4, the liquid repellent coating method includes step S10, step S20, and step S30.
まず、工程Ｓ１０において、待機位置Ｐ２にて、撥液剤ノズル１７１は、自転中のブラシ１５１に向けて撥液剤８１を吐出する。その結果、ブラシ１５１に撥液剤８１が染み込む。特に、工程Ｓ１０では、自転機構１５８（図３）がブラシ１５１を自転させているので、撥液剤８１がブラシ１５１に均等に染み込む。図４では、撥液剤ノズル１７１は、回転軸線ＡＸ２に交差する方向に撥液剤８１を吐出している。具体的には、撥液剤ノズル１７１は、回転軸線ＡＸ２に略直交する方向に撥液剤８１を吐出している。
First, in step S10, at the standby position P2, the liquid repellent nozzle 171 discharges the liquid repellent 81 toward the rotating brush 151. As a result, the liquid repellent agent 81 soaks into the brush 151. In particular, in step S10, since the rotation mechanism 158 (FIG. 3) rotates the brush 151, the liquid repellent 81 evenly soaks into the brush 151. In FIG. 4, the liquid repellent nozzle 171 discharges the liquid repellent 81 in a direction intersecting the rotation axis AX2. Specifically, the liquid repellent nozzle 171 discharges the liquid repellent 81 in a direction substantially perpendicular to the rotation axis AX2.
次に、工程Ｓ２０において、塗布位置Ｐ１にて、ブラシ１５１は、回転中の基板Ｗの端面部５１に接触することで、基板Ｗの端面部５１に撥液剤８１を塗布する。好ましくは、工程Ｓ２０では、自転機構１５８（図３）がブラシ１５１を自転させる。この場合、ブラシ１５１は、自転しながら、撥液剤８１を基板Ｗの端面部５１に塗布する。その結果、本実施形態によれば、撥液剤８１をより確実に基板Ｗの端面部５１に塗布できる。
Next, in step S20, the brush 151 applies the liquid repellent agent 81 to the end surface 51 of the substrate W by contacting the end surface 51 of the rotating substrate W at the application position P1. Preferably, in step S20, the rotation mechanism 158 (FIG. 3) rotates the brush 151. In this case, the brush 151 applies the liquid repellent agent 81 to the end surface portion 51 of the substrate W while rotating. As a result, according to this embodiment, the liquid repellent agent 81 can be more reliably applied to the end surface portion 51 of the substrate W.
図４の例では、基板Ｗの端面部５１とブラシ１５１との接触位置において、基板Ｗの回転方向とブラシ１５１の自転方向とは逆である。従って、撥液剤８１をより確実に基板Ｗの端面部５１に塗布できる。なお、基板Ｗの端面部５１とブラシ１５１との接触位置において、基板Ｗの回転方向とブラシ１５１の自転方向とが同じであってもよい。
In the example of FIG. 4, at the contact position between the end surface portion 51 of the substrate W and the brush 151, the rotation direction of the substrate W and the rotation direction of the brush 151 are opposite to each other. Therefore, the liquid repellent agent 81 can be more reliably applied to the end surface portion 51 of the substrate W. Note that at the contact position between the end surface portion 51 of the substrate W and the brush 151, the rotation direction of the substrate W and the rotation direction of the brush 151 may be the same.
次に、工程Ｓ３０において、加熱部２０は、基板Ｗの下方から、基板Ｗの径方向ＲＤ外側部分を加熱することで、端面部５１に塗布された撥液剤８１（工程Ｓ２０）を乾燥させる。その結果、撥液剤８１から溶媒が蒸発し、撥液物質８２が基板Ｗの端面部５１に付着する。つまり、加熱部２０は、撥液剤８１を乾燥させて、撥液剤８１中の撥液物質８２を基板Ｗの端面部５１に付着させる。
Next, in step S30, the heating unit 20 dries the liquid repellent agent 81 applied to the end surface portion 51 (step S20) by heating the outer portion of the substrate W in the radial direction RD from below the substrate W. As a result, the solvent from the liquid repellent agent 81 evaporates, and the liquid repellent substance 82 adheres to the end surface portion 51 of the substrate W. That is, the heating unit 20 dries the liquid repellent agent 81 and causes the liquid repellent substance 82 in the liquid repellent agent 81 to adhere to the end surface portion 51 of the substrate W.
例えば、端面部５１に撥液物質８２が付着した基板Ｗは、処理ユニット１（図１）に搬入される。そして、裏面用ノズル８（図１）が、基板Ｗの裏面Ａ２に処理液を吐出する。この場合、基板Ｗの端面部５１に付着した撥液物質８２が処理液を弾くので、処理液が基板Ｗの裏面Ａ２から表面Ａ１に回り込むことを抑制できる。その結果、基板Ｗの表面Ａ１に形成されたパターンが裏面Ａ２に吐出された処理液の影響を受けることを抑制できる。
For example, the substrate W having the liquid repellent substance 82 attached to the end surface portion 51 is carried into the processing unit 1 (FIG. 1). Then, the back surface nozzle 8 (FIG. 1) discharges the processing liquid onto the back surface A2 of the substrate W. In this case, the liquid repellent substance 82 attached to the end surface portion 51 of the substrate W repels the processing liquid, so that it is possible to suppress the processing liquid from going around from the back surface A2 of the substrate W to the front surface A1. As a result, the pattern formed on the front surface A1 of the substrate W can be prevented from being influenced by the processing liquid discharged onto the back surface A2.
ここで、基板Ｗの端面部５１に付着した撥液物質８２は高分子化合物である。従って、撥液物質８２を除去する作業は不要である。なぜなら、撥液物質８２は、端面部５１に存在するに過ぎないからである。
Here, the liquid-repellent substance 82 attached to the end surface portion 51 of the substrate W is a polymer compound. Therefore, there is no need to remove the liquid repellent material 82. This is because the liquid repellent substance 82 exists only on the end surface portion 51.
次に、図５及び図６を参照して、基板Ｗの詳細を説明する。図５（ａ）は、基板Ｗ及びブラシ１５１を示す断面図である。図５（ｂ）は、基板Ｗの側面部５１５に撥液剤８１が塗布された状態を示す断面図である。図５（ｃ）は、基板Ｗの表面肩部５１２、側面部５１５、及び、裏面肩部５１４に撥液剤８１が塗布された状態を示す断面図である。図５（ａ）～図５（ｃ）では、基板Ｗの径方向ＲＤ外側部分の断面を拡大して示している。図６は、基板Ｗの一部を示す平面図である。図６では、基板Ｗの径方向ＲＤ外側部分の表面Ａ１を拡大して示している。
Next, details of the substrate W will be described with reference to FIGS. 5 and 6. FIG. 5A is a cross-sectional view showing the substrate W and the brush 151. FIG. 5(b) is a cross-sectional view showing a state in which the side surface portion 515 of the substrate W is coated with the liquid repellent agent 81. FIG. 5C is a cross-sectional view showing a state in which the liquid repellent agent 81 is applied to the front shoulder portion 512, the side surface portion 515, and the back shoulder portion 514 of the substrate W. 5(a) to 5(c) show enlarged cross-sections of the outer portions of the substrate W in the radial direction RD. FIG. 6 is a plan view showing a part of the substrate W. In FIG. 6, the surface A1 of the outer portion in the radial direction RD of the substrate W is shown in an enlarged manner.
図５（ａ）及び図６に示すように、基板Ｗは、本体５０（以下、「基板本体５０」と記載）と、端面部５１とを有する。基板本体５０は、基板Ｗのうち端面部５１を除く部分を示す。換言すれば、基板本体５０は、基板Ｗのうち端面部５１よりも径方向ＲＤ内側部分を示す。更に換言すれば、基板本体５０は、基板Ｗのうち径方向ＲＤに沿った略平坦な部分を示す。基板本体５０には、パターンが形成されている。例えば、基板Ｗの表面Ａ１側において、基板本体５０にパターンが形成されている。なお、例えば、基板Ｗの裏面Ａ２側において、基板本体５０にパターンが形成されていてもよい。基板本体５０は、略円板形状を有する。なお、図６では、理解の容易のために、基板本体５０と端面部５１との境界を破線で示している。
As shown in FIGS. 5A and 6, the substrate W includes a main body 50 (hereinafter referred to as "substrate main body 50") and an end surface portion 51. The substrate body 50 indicates a portion of the substrate W excluding the end surface portion 51. In other words, the substrate main body 50 indicates a portion of the substrate W that is inner than the end surface portion 51 in the radial direction RD. In other words, the substrate body 50 represents a substantially flat portion of the substrate W along the radial direction RD. A pattern is formed on the substrate body 50. For example, a pattern is formed on the substrate body 50 on the surface A1 side of the substrate W. Note that, for example, a pattern may be formed on the substrate body 50 on the back surface A2 side of the substrate W. The substrate main body 50 has a substantially disk shape. In addition, in FIG. 6, for ease of understanding, the boundary between the substrate body 50 and the end face portion 51 is shown by a broken line.
具体的には、基板本体５０は、本体表面周縁部５０１及び本体裏面周縁部５０２を含む。本体表面周縁部５０１は、基板本体５０の表面Ａ１のうちの周縁領域を示す。本体裏面周縁部５０２は、基板本体５０の裏面Ａ２のうちの周縁領域を示す。本体表面周縁部５０１及び本体裏面周縁部５０２の各々は、回転軸線ＡＸ１（図２）の周りの略円環状の領域である。本体表面周縁部５０１及び本体裏面周縁部５０２の各々の径方向ＲＤの幅は、例えば、１ｍｍ以上４ｍｍ以下である。
Specifically, the substrate main body 50 includes a main body front surface peripheral portion 501 and a main body back surface peripheral portion 502. The main body surface peripheral portion 501 indicates a peripheral region of the surface A1 of the substrate main body 50. The main body back surface peripheral portion 502 indicates a peripheral region of the back surface A2 of the substrate main body 50. Each of the main body front surface peripheral portion 501 and the main body back surface peripheral portion 502 is a substantially annular region around the rotation axis AX1 (FIG. 2). The width in the radial direction RD of each of the main body front peripheral edge 501 and the main body back peripheral edge 502 is, for example, 1 mm or more and 4 mm or less.
端面部５１は、基板Ｗのうち基板本体５０よりも径方向ＲＤ外側の部分を示す。換言すれば、端面部５１は、基板Ｗのうち基板本体５０よりも径方向ＲＤ外側の端面領域を示す。更に換言すれば、端面部５１は、基板Ｗのうち本体表面周縁部５０１及び本体裏面周縁部５０２よりも径方向ＲＤ外側の端面領域を示す。端面部５１は、表面縁部５１１と、表面肩部５１２と、側面部５１５と、裏面肩部５１４と、裏面縁部５１３とを有する。
The end surface portion 51 indicates a portion of the substrate W that is outside the substrate body 50 in the radial direction RD. In other words, the end surface portion 51 indicates an end surface region of the substrate W that is outside the substrate main body 50 in the radial direction RD. In other words, the end surface portion 51 indicates an end surface region of the substrate W that is outside the main body front surface peripheral portion 501 and the main body back surface peripheral portion 502 in the radial direction RD. The end surface portion 51 has a front edge 511 , a front shoulder 512 , a side surface 515 , a back shoulder 514 , and a back edge 513 .
表面縁部５１１は、基板Ｗの表面Ａ１と裏面Ａ２とのうちの表面Ａ１側において、基板本体５０よりも径方向ＲＤ外側に位置する。表面縁部５１１は、回転軸線ＡＸ１（図２）の周りの略円環状の領域である。表面縁部５１１は、平面視において、基板本体５０（具体的には本体表面周縁部５０１）を周方向ＣＤに囲む。表面縁部５１１は、断面視において、本体表面周縁部５０１から表面肩部５１２に向かって基板本体５０の表面Ａ１に対して傾斜する傾斜面を含む。表面縁部５１１は、本体表面周縁部５０１と表面肩部５１２とを接続する。
The surface edge portion 511 is located on the surface A1 side of the surface A1 and the back surface A2 of the substrate W, and is located on the outer side of the substrate body 50 in the radial direction RD. The surface edge 511 is a substantially annular region around the rotation axis AX1 (FIG. 2). The surface edge portion 511 surrounds the substrate body 50 (specifically, the body surface peripheral portion 501) in the circumferential direction CD in a plan view. The surface edge portion 511 includes an inclined surface that is inclined with respect to the surface A1 of the substrate body 50 from the body surface peripheral portion 501 toward the surface shoulder portion 512 in a cross-sectional view. Surface edge 511 connects body surface periphery 501 and surface shoulder 512 .
表面肩部５１２は、表面Ａ１側において、表面縁部５１１よりも径方向ＲＤ外側に位置する。表面肩部５１２は、回転軸線ＡＸ１（図２）の周りの略円環状の領域である。表面肩部５１２は、平面視において、表面縁部５１１を周方向ＣＤに囲む。表面肩部５１２は、断面視において、表面縁部５１１から側面部５１５に向かって湾曲している湾曲面を含む。表面肩部５１２は、表面縁部５１１と側面部５１５とを接続する。
The surface shoulder portion 512 is located on the outer side of the surface edge portion 511 in the radial direction RD on the surface A1 side. The surface shoulder portion 512 is a substantially annular region around the rotation axis AX1 (FIG. 2). The surface shoulder portion 512 surrounds the surface edge portion 511 in the circumferential direction CD in a plan view. The surface shoulder portion 512 includes a curved surface that curves from the surface edge portion 511 toward the side surface portion 515 in a cross-sectional view. Surface shoulder 512 connects surface edge 511 and side surface 515 .
裏面縁部５１３は、裏面Ａ２側において、基板本体５０よりも径方向ＲＤ外側に位置する。裏面縁部５１３は、回転軸線ＡＸ１（図２）の周りの略円環状の領域である。裏面縁部５１３は、平面視において、基板本体５０（具体的には本体裏面周縁部５０２）を周方向ＣＤに囲む。裏面縁部５１３は、断面視において、本体裏面周縁部５０２から裏面肩部５１４に向かって基板本体５０の裏面Ａ２に対して傾斜する傾斜面を含む。裏面縁部５１３は、本体裏面周縁部５０２と裏面肩部５１４とを接続する。
The back edge 513 is located on the outer side of the substrate body 50 in the radial direction RD on the back A2 side. The back edge 513 is a substantially annular region around the rotation axis AX1 (FIG. 2). The back edge 513 surrounds the substrate body 50 (specifically, the main body back peripheral edge 502) in the circumferential direction CD in plan view. The back edge 513 includes an inclined surface that is inclined with respect to the back surface A2 of the substrate body 50 from the main body back peripheral edge 502 toward the back shoulder 514 in a cross-sectional view. The back edge 513 connects the main body back peripheral edge 502 and the back shoulder 514 .
裏面肩部５１４は、裏面Ａ２側において、裏面縁部５１３よりも径方向ＲＤ外側に位置する。裏面肩部５１４は、回転軸線ＡＸ１（図２）の周りの略円環状の領域である。裏面縁部５１３は、平面視において、裏面縁部５１３を周方向ＣＤに囲む。裏面肩部５１４は、断面視において、裏面縁部５１３から側面部５１５に向かって湾曲している湾曲面を含む。裏面肩部５１４は、裏面縁部５１３と側面部５１５とを接続する。
The back shoulder portion 514 is located on the outer side of the back surface edge 513 in the radial direction RD on the back surface A2 side. The back shoulder portion 514 is a substantially annular region around the rotation axis AX1 (FIG. 2). The back edge 513 surrounds the back edge 513 in the circumferential direction CD in plan view. The back shoulder 514 includes a curved surface that curves from the back edge 513 toward the side surface 515 in cross-sectional view. Back shoulder 514 connects back edge 513 and side surface 515 .
側面部５１５は、基板Ｗの径方向ＲＤの最も外側に位置する。側面部５１５は、回転軸線ＡＸ１（図２）の周りの略円環状の領域である。側面部５１５は、平面視において、表面肩部５１２及び裏面肩部５１４を周方向ＣＤに囲む。側面部５１５は、断面視において、表面肩部５１２から裏面肩部５１４に向かって延びる平坦面を含む。側面部５１５は、回転軸線ＡＸ１の周りに略円筒形状を有する。側面部５１５は、表面肩部５１２と裏面肩部５１４とを接続する。
The side surface portion 515 is located at the outermost side of the substrate W in the radial direction RD. The side surface portion 515 is a substantially annular region around the rotation axis AX1 (FIG. 2). The side surface portion 515 surrounds the front shoulder portion 512 and the back shoulder portion 514 in the circumferential direction CD in a plan view. Side portion 515 includes a flat surface extending from front shoulder portion 512 toward back shoulder portion 514 in cross-sectional view. The side surface portion 515 has a substantially cylindrical shape around the rotation axis AX1. Side surface portion 515 connects front shoulder portion 512 and back shoulder portion 514 .
本実施形態では、好ましくは、図５（ｂ）に示すように、ブラシ１５１は、側面部５１５だけに接触して、側面部５１５に対して撥液剤８１を塗布する。従って、ブラシ１５１による撥液剤８１の塗布中に、撥液剤８１が本体表面周縁部５０１及び本体裏面周縁部５０２に進入することを確実に抑制できる。その結果、基板本体５０に余分な撥液剤８１が塗布されることをより効果的に抑制できる。また、本体表面周縁部５０１及び本体裏面周縁部５０２に撥液剤８１が進入しないので、本体表面周縁部５０１及び本体裏面周縁部５０２にもパターンを形成することができる。
In this embodiment, the brush 151 preferably contacts only the side surface portion 515 to apply the liquid repellent agent 81 to the side surface portion 515, as shown in FIG. 5(b). Therefore, during the application of the liquid repellent agent 81 by the brush 151, it is possible to reliably prevent the liquid repellent agent 81 from entering the main body surface peripheral portion 501 and the main body rear surface peripheral portion 502. As a result, application of excess liquid repellent agent 81 to substrate body 50 can be more effectively suppressed. Moreover, since the liquid repellent agent 81 does not enter the main body front peripheral edge 501 and the main body back peripheral edge 502, a pattern can also be formed on the main body front peripheral edge 501 and the main body back peripheral edge 502.
また、図５（ｃ）に示すように、ブラシ１５１は、表面肩部５１２、側面部５１５、及び、裏面肩部５１４に接触して、表面肩部５１２、側面部５１５、及び、裏面肩部５１４に対して、撥液剤８１を塗布してもよい。この場合でも、表面縁部５１１及び裏面縁部５１３があるため、ブラシ１５１による撥液剤８１の塗布中に、撥液剤８１が本体表面周縁部５０１及び本体裏面周縁部５０２に進入することを抑制できる。その結果、基板本体５０に余分な撥液剤８１が塗布されることを抑制できるとともに、本体表面周縁部５０１及び本体裏面周縁部５０２にもパターンを形成することができる。
Further, as shown in FIG. 5C, the brush 151 contacts the front shoulder 512, the side surface 515, and the back shoulder 514, and the brush 151 contacts the front shoulder 512, the side surface 515, and the back shoulder 514, and 514 may be coated with a liquid repellent agent 81. Even in this case, since the front edge 511 and the back edge 513 are present, it is possible to prevent the liquid repellent 81 from entering the main body front peripheral edge 501 and the main body back peripheral edge 502 during application of the liquid repellent 81 by the brush 151. . As a result, it is possible to suppress the excessive liquid repellent agent 81 from being applied to the substrate main body 50, and it is also possible to form a pattern on the main body surface peripheral portion 501 and the main body rear surface peripheral portion 502.
例えば、制御部２１は付勢機構１５９による付勢力（押し圧）を調整し、ブラシ１５１を弾性変形させることで、ブラシ１５１を、表面肩部５１２、側面部５１５、及び、裏面肩部５１４に接触させる。
For example, the control unit 21 adjusts the biasing force (pushing pressure) by the biasing mechanism 159 and elastically deforms the brush 151 so that the brush 151 is attached to the front shoulder portion 512, the side surface portion 515, and the back shoulder portion 514. bring into contact.
なお、本体表面周縁部５０１及び本体裏面周縁部５０２に撥液剤が進入しない限りにおいて、ブラシ１５１は、基板Ｗの表面縁部５１１、表面肩部５１２、側面部５１５、裏面肩部５１４、及び、裏面縁部５１３に接触して、表面縁部５１１、表面肩部５１２、側面部５１５、裏面肩部５１４、及び、裏面縁部５１３に撥液剤を塗布してもよい。
Note that, as long as the liquid repellent does not enter the main body front peripheral edge 501 and the main body back peripheral edge 502, the brush 151 can be applied to the front edge 511, front shoulder 512, side surface 515, back shoulder 514, and A liquid repellent may be applied to the front edge 511 , the front shoulder 512 , the side surface 515 , the back shoulder 514 , and the back edge 513 in contact with the back edge 513 .
ここで、図５（ａ）に示すように、例えば、ブラシ１５１の軸方向ＡＤの長さＬｂは、基板Ｗの軸方向ＡＤの厚みｄよりも長い。例えば、基板Ｗの厚みｄは７６５μｍであり、ブラシ１５１の長さＬｂは８００μｍである。また、例えば、表面肩部５１２の曲率半径は２７０μｍ、側面部５１５の軸方向ＡＤの長さＬ０は２２８μｍ、裏面肩部５１４の曲率半径は２３８μｍである。また、例えば、長さＬ１は３１４μｍ、長さＬ２は３２３μｍである。長さＬ１は、表面縁部５１１の径方向ＲＤ内側端部から、表面肩部５１２の径方向ＲＤ外側端部（側面部５１５）までの径方向ＲＤに沿った距離を示す。長さＬ２は、裏面縁部５１３の径方向ＲＤ内側端部から、裏面肩部５１４の径方向ＲＤ外側端部（側面部５１５）までの径方向ＲＤに沿った距離を示す。また、表面縁部５１１は、本体表面周縁部５０１に対して傾斜角度θ１を有する。裏面縁部５１３は、本体裏面周縁部５０２に対して傾斜角度θ２を有する。例えば、傾斜角度θ１は２２．３度、傾斜角度θ２は２３．３度である。
Here, as shown in FIG. 5A, for example, the length Lb of the brush 151 in the axial direction AD is longer than the thickness d of the substrate W in the axial direction AD. For example, the thickness d of the substrate W is 765 μm, and the length Lb of the brush 151 is 800 μm. Further, for example, the radius of curvature of the front shoulder portion 512 is 270 μm, the length L0 in the axial direction AD of the side surface portion 515 is 228 μm, and the radius of curvature of the back shoulder portion 514 is 238 μm. Further, for example, the length L1 is 314 μm, and the length L2 is 323 μm. The length L1 indicates the distance along the radial direction RD from the radially RD inner end of the surface edge 511 to the radially RD outer end (side surface portion 515) of the surface shoulder 512. The length L2 indicates the distance along the radial direction RD from the radial direction RD inner end of the back surface edge 513 to the radial direction RD outer end (side surface portion 515) of the back surface shoulder portion 514. Further, the surface edge portion 511 has an inclination angle θ1 with respect to the main body surface peripheral portion 501. The back edge 513 has an inclination angle θ2 with respect to the main body back peripheral edge 502. For example, the inclination angle θ1 is 22.3 degrees, and the inclination angle θ2 is 23.3 degrees.
次に、図７を参照して、基板Ｗに形成されるノッチ５２を説明する。図７は、基板Ｗを示す平面図である。図７に示すように、基板Ｗは、ノッチ５２を有する場合がある。ノッチ５２は、平面視において、基板Ｗの端面部５１から径方向ＲＤ内側に窪む凹部である。ノッチ５２の周方向ＣＤの幅は、例えば、径方向ＲＤ内側ほど小さくなる。
Next, the notch 52 formed in the substrate W will be described with reference to FIG. 7. FIG. 7 is a plan view showing the substrate W. As shown in FIG. 7, the substrate W may have a notch 52. The notch 52 is a recessed portion recessed inward in the radial direction RD from the end surface portion 51 of the substrate W in plan view. For example, the width of the notch 52 in the circumferential direction CD becomes smaller toward the inner side in the radial direction RD.
次に、図８を参照して、ノッチ５２への撥液剤の塗布を説明する。図８は、ブラシ１５１がノッチ５２に接触している状態を示す平面図である。図８に示すように、ブラシ１５１の少なくとも一部は、基板Ｗの端面部５１に存在するノッチ５２に進入し、ノッチ５２の底点ＢＭに接触する。従って、本実施形態によれば、端面部５１の場合と同様に、基板本体５０（具体的には、本体表面周縁部５０１及び本体裏面周縁部５０２）への撥液剤の進入を回避しつつ、ノッチ５２に撥液剤を塗布できる。
Next, applying the liquid repellent to the notch 52 will be described with reference to FIG. 8. FIG. 8 is a plan view showing a state in which the brush 151 is in contact with the notch 52. As shown in FIG. 8, at least a portion of the brush 151 enters the notch 52 present in the end surface portion 51 of the substrate W and comes into contact with the bottom point BM of the notch 52. Therefore, according to the present embodiment, as in the case of the end surface portion 51, while avoiding the liquid repellent from entering the substrate main body 50 (specifically, the main body front surface peripheral portion 501 and the main body back surface peripheral portion 502), A liquid repellent can be applied to the notch 52.
図８の例では、平面視において、ブラシ１５１の全体がノッチ５２に進入している。ただし、ブラシ１５１がノッチ５２の底点ＢＭに接触する限りは、平面視において、ブラシ１５１の一部がノッチ５２に進入していてもよい。
In the example of FIG. 8, the entire brush 151 has entered the notch 52 in plan view. However, as long as the brush 151 contacts the bottom point BM of the notch 52, a part of the brush 151 may enter the notch 52 in plan view.
また、図８の例では、ブラシ１５１の直径２Ｒは、ノッチ５２の周方向ＣＤの最大幅Ｌよりも小さい。「Ｒ」は、平面視におけるブラシ１５１の半径を示す。本実施形態では、断面視において、ブラシ１５１は略円形である。この場合の断面視は、回転軸線ＡＸ２（図３）に垂直な仮想平面によってブラシ１５１を切断して見ることを示す。また、本実施形態において、ブラシ１５１の半径Ｒ及び直径２Ｒは、それぞれ、断面視におけるブラシ１５１の半径及び直径を示す。加えて、図８の例では、ブラシ１５１の直径２Ｒは、ノッチ５２の径方向ＲＤの深さＤよりも小さい。従って、平面視において、ブラシ１５１の全体が、ノッチ５２の内部に収まる。基板Ｗは、回転方向Ｄ１に回転するため、ブラシ１５１は、ノッチ５２に対して相対的に移動する。従って、ノッチ５２の全体に、撥液剤を塗布できる。
In the example of FIG. 8, the diameter 2R of the brush 151 is smaller than the maximum width L of the notch 52 in the circumferential direction CD. "R" indicates the radius of the brush 151 in plan view. In this embodiment, the brush 151 is approximately circular in cross-sectional view. The cross-sectional view in this case shows that the brush 151 is cut along a virtual plane perpendicular to the rotation axis AX2 (FIG. 3). Moreover, in this embodiment, the radius R and the diameter 2R of the brush 151 respectively indicate the radius and diameter of the brush 151 in a cross-sectional view. Additionally, in the example of FIG. 8, the diameter 2R of the brush 151 is smaller than the depth D of the notch 52 in the radial direction RD. Therefore, the entire brush 151 fits inside the notch 52 in plan view. Since the substrate W rotates in the rotation direction D1, the brush 151 moves relative to the notch 52. Therefore, the liquid repellent can be applied to the entire notch 52.
特に、本実施形態では、付勢機構１５９（図３）は、ブラシ１５１を基板Ｗの径方向ＲＤ内側に向けて付勢する。従って、基板Ｗの回転によってブラシ１５１がノッチ５２に位置した場合に、ブラシ１５１は速やかにノッチ５２に進入する。その結果、より確実に、ノッチ５２に撥液剤を塗布できる。
In particular, in this embodiment, the biasing mechanism 159 (FIG. 3) biases the brush 151 toward the inside of the substrate W in the radial direction RD. Therefore, when the brush 151 is located in the notch 52 due to the rotation of the substrate W, the brush 151 quickly enters the notch 52. As a result, the liquid repellent can be applied to the notch 52 more reliably.
次に、図７及び図９を参照して、ブラシ１５１の半径Ｒの決定方法の一例を説明する。図７に示すように、ノッチ５２の幅Ｌは、式（１）によって示される。式（１）において、「Ｒｗ」は、基板Ｗの半径を示す。「θ」は、ノッチ５２に対する中心角を示す。中心角θの単位は、「度」である。
Next, an example of a method for determining the radius R of the brush 151 will be described with reference to FIGS. 7 and 9. As shown in FIG. 7, the width L of the notch 52 is expressed by equation (1). In formula (1), "Rw" indicates the radius of the substrate W. “θ” indicates the central angle with respect to the notch 52. The unit of the central angle θ is "degrees".
Ｌ＝２π×Ｒｗ×（θ／３６０） …（１）
L=2π×Rw×(θ/360)...(1)
図９は、ブラシ１５１及びノッチ５２を示す平面図である。図９に示すように、ノッチ５２の底点ＢＭを原点０として、ｘ座標及びｙ座標を定義する。そして、ノッチ５２を放物線ｙで近似する。従って、ノッチ５２は、式（２）によって示される。式（２）の係数ａは、式（３）によって示される。
FIG. 9 is a plan view showing the brush 151 and the notch 52. As shown in FIG. 9, the x and y coordinates are defined with the bottom point BM of the notch 52 as the origin 0. Then, the notch 52 is approximated by a parabola y. Therefore, notch 52 is represented by equation (2). The coefficient a in equation (2) is given by equation (3).
ｙ＝ａ×ｘ2 …（２）
ａ＝ｙ／ｘ2＝Ｂｙ／Ａｘ2 …（３） y=a×x 2 …(2)
a=y/ x2 =By/ Ax2 ...(3)
ａ＝ｙ／ｘ2＝Ｂｙ／Ａｘ2 …（３） y=a×x 2 …(2)
a=y/ x2 =By/ Ax2 ...(3)
放物線ｙの各点ｘにおける曲率半径Ｒｃは、式（４）によって示される。「ｙ１」は、式（２）の１回微分を示し、式（５）によって示される。「ｙ２」は、式（２）の２回微分を示し、式（６）によって示される。
The radius of curvature Rc at each point x of the parabola y is expressed by equation (4). "y1" indicates the first differential of equation (2) and is expressed by equation (5). "y2" indicates the second differential of equation (2) and is expressed by equation (6).
Ｒｃ＝（１＋ｙ１2）3/2／ｙ２ …（４）
ｙ１＝ｄｙ／ｄｘ …（５）
ｙ２＝ｄｙ／ｄｘ …（６） Rc=(1+y1 2 ) 3/2 /y2...(4)
y1=dy/dx...(5)
y2=dy/dx...(6)
ｙ１＝ｄｙ／ｄｘ …（５）
ｙ２＝ｄｙ／ｄｘ …（６） Rc=(1+y1 2 ) 3/2 /y2...(4)
y1=dy/dx...(5)
y2=dy/dx...(6)
放物線ｙの原点０における曲率半径Ｒ０、つまり、ノッチ５２の底点ＢＭにおける曲率半径Ｒ０は、式（７）によって示される。つまり、式（７）において、ｘ＝０である。
The radius of curvature R0 at the origin 0 of the parabola y, that is, the radius of curvature R0 at the bottom point BM of the notch 52 is expressed by equation (7). That is, in equation (7), x=0.
Ｒ０＝（１＋（２ａ）2×ｘ2）3/2／２ａ＝１／２ａ …（７）
R0=(1+(2a) 2 ×x 2 ) 3/2 /2a=1/2a...(7)
本実施形態では、原点０における曲率半径Ｒ０をブラシ１５１の半径Ｒに設定する。その結果、ブラシ１５１をノッチ５２に確実に進入させることができ、ノッチ５２に確実に撥液剤を塗布できる。
In this embodiment, the radius of curvature R0 at the origin 0 is set to the radius R of the brush 151. As a result, the brush 151 can be reliably entered into the notch 52, and the liquid repellent can be reliably applied to the notch 52.
ここで、一例として、ブラシ１５１の半径Ｒの最大値Ｒｍｘ及び最小値Ｒｍｎを算出する。
Here, as an example, the maximum value Rmx and minimum value Rmn of the radius R of the brush 151 are calculated.
まず、最大値Ｒｍｘを算出する。この場合、基板Ｗの半径Ｒｗ＝１５０ｍｍ、中心角θ＝２とすると、式（１）によって、ノッチ５２の幅Ｌ＝５．２４ｍｍ、である。また、Ａｘ＝２．６２ｍｍ、Ｂｙ＝１．２０ｍｍとすると、式（３）によって、係数ａ＝０．１７５、である。係数ａを式（７）に代入すると、曲率半径Ｒ０の最大値は、２．８６ｍｍ、となる。よって、ブラシ１５１の半径Ｒの最大値Ｒｍｘを２．８６ｍｍに設定する。
First, calculate the maximum value Rmx. In this case, assuming that the radius Rw of the substrate W is 150 mm and the central angle θ is 2, the width L of the notch 52 is 5.24 mm according to equation (1). Further, when Ax=2.62 mm and By=1.20 mm, the coefficient a=0.175 according to equation (3). When the coefficient a is substituted into equation (7), the maximum value of the radius of curvature R0 is 2.86 mm. Therefore, the maximum value Rmx of the radius R of the brush 151 is set to 2.86 mm.
次に、最小値Ｒｍｎを算出する。この場合、基板Ｗの半径Ｒｗ＝１５０ｍｍ、中心角θ＝１．５とすると、式（１）によって、ノッチ５２の幅Ｌ＝３．９３ｍｍ、である。また、Ａｘ＝１．９６ｍｍ、Ｂｙ＝１．２０ｍｍとすると、式（３）によって、係数ａ＝０．３１、である。係数ａを式（７）に代入すると、曲率半径Ｒ０の最小値は、１．６１ｍｍ、となる。よって、ブラシ１５１の半径Ｒの最小値Ｒｍｎを１．６１ｍｍに設定する。
Next, calculate the minimum value Rmn. In this case, assuming that the radius Rw of the substrate W is 150 mm and the central angle θ is 1.5, the width L of the notch 52 is 3.93 mm according to equation (1). Further, when Ax=1.96 mm and By=1.20 mm, the coefficient a=0.31 according to equation (3). When the coefficient a is substituted into equation (7), the minimum value of the radius of curvature R0 is 1.61 mm. Therefore, the minimum value Rmn of the radius R of the brush 151 is set to 1.61 mm.
すなわち、例えば、ノッチ５２の幅Ｌが３．９３ｍｍ以上５．２４ｍｍ以下である場合、ブラシ１５１の半径Ｒを１．６１ｍｍ以上２．８６ｍｍ以下に設定する。
That is, for example, when the width L of the notch 52 is 3.93 mm or more and 5.24 mm or less, the radius R of the brush 151 is set to 1.61 mm or more and 2.86 mm or less.
次に、図１～図３及び図１０を参照して、本実施形態に係る基板処理方法を説明する。基板処理方法は撥液剤塗布方法を含んでいる。図１０は、本実施形態に係る基板処理方法を示すフローチャートである。図１０に示すように、基板処理方法は工程Ｓ１～工程Ｓ１０を含む。工程Ｓ１～工程Ｓ１０は基板処理装置１００によって実行される。
Next, the substrate processing method according to this embodiment will be described with reference to FIGS. 1 to 3 and FIG. 10. The substrate processing method includes a liquid repellent coating method. FIG. 10 is a flowchart showing the substrate processing method according to this embodiment. As shown in FIG. 10, the substrate processing method includes steps S1 to S10. Steps S1 to S10 are executed by the substrate processing apparatus 100.
まず、工程Ｓ１において、撥液剤供給部１７（図２）は、待機位置Ｐ２（図２）に位置するブラシ１５１を自転させながらブラシ１５１に対して撥液剤を供給する。具体的には、制御部２１は、ブラシ１５１が自転するように、自転機構１５８（図３）を制御する。その結果、自転機構１５８はブラシ１５１を自転させる。更に、制御部２１は、撥液剤をブラシ１５１に供給するように、撥液剤供給部１７を制御する。その結果、撥液剤供給部１７は、ブラシ１５１に撥液剤を供給する。なお、ブラシ１５１の自転と撥液剤の供給とは同時に実行されてもよいし、自転が先で撥液剤の供給が後でもよいし、自転が後で撥液剤の供給が先でもよい。なお、ブラシ１５１への撥液剤の供給が完了すると、自転機構１５８はブラシ１５１の自転を停止する。
First, in step S1, the liquid repellent supply unit 17 (FIG. 2) supplies a liquid repellent to the brush 151 while rotating the brush 151 located at the standby position P2 (FIG. 2). Specifically, the control unit 21 controls the rotation mechanism 158 (FIG. 3) so that the brush 151 rotates on its axis. As a result, the rotation mechanism 158 causes the brush 151 to rotate. Further, the control unit 21 controls the liquid repellent supply unit 17 to supply the liquid repellent to the brush 151. As a result, the liquid repellent supply unit 17 supplies the liquid repellent to the brush 151. Note that the rotation of the brush 151 and the supply of the liquid repellent may be performed at the same time, or the rotation may be performed first and the liquid repellent may be supplied after, or the rotation may be performed and the liquid repellent may be supplied first. Note that when the supply of the liquid repellent agent to the brush 151 is completed, the rotation mechanism 158 stops the rotation of the brush 151.
次に、工程Ｓ２において、制御部２１は、基板Ｗを撥液剤塗布ユニット５に搬入するように、センターロボットＣＲ（図１）を制御する。その結果、センターロボットＣＲは、基板Ｗを撥液剤塗布ユニット５に搬入し、基板Ｗをスピンチャック１３（図３）に保持させる。
Next, in step S2, the control unit 21 controls the central robot CR (FIG. 1) to carry the substrate W into the liquid repellent coating unit 5. As a result, the center robot CR carries the substrate W into the liquid repellent application unit 5 and causes the spin chuck 13 (FIG. 3) to hold the substrate W.
次に、工程Ｓ３において、制御部２１は、基板Ｗを回転するように、スピンチャック１３を制御する。その結果、スピンチャック１３は、基板Ｗを回転させる。
Next, in step S3, the control unit 21 controls the spin chuck 13 to rotate the substrate W. As a result, the spin chuck 13 rotates the substrate W.
次に、工程Ｓ４において、ブラシ１５１は、自転しながら、回転中の基板Ｗの端面部５１に接触して、基板Ｗの端面部５１に撥液剤を塗布する。
Next, in step S4, the brush 151 contacts the end surface portion 51 of the rotating substrate W while rotating, and applies a liquid repellent to the end surface portion 51 of the substrate W.
具体的には、制御部２１は、ブラシ１５１が自転するように、自転機構１５８を制御する。その結果、自転機構１５８は、ブラシ１５１を自転させる。そして、制御部２１は、ブラシ１５１が待機位置Ｐ２から塗布位置Ｐ１（図２）に移動するように、揺動アーム１５２（図３）を制御する。その結果、揺動アーム１５２はブラシ１５１を待機位置Ｐ２から塗布位置Ｐ１に移動させる。つまり、制御部２１は、自転中のブラシ１５１が基板Ｗの端面部５１に接触するように、揺動アーム１５２を制御する。その結果、揺動アーム１５２は、自転中のブラシ１５１を基板Ｗの端面部５１に接触させる。よって、基板Ｗの端面部５１に撥液剤が塗布される。撥液剤の塗布が完了すると、揺動アーム１５２はブラシ１５１を待機位置Ｐ２に移動させるとともに、自転機構１５８はブラシ１５１の自転を停止する。
Specifically, the control unit 21 controls the rotation mechanism 158 so that the brush 151 rotates on its own axis. As a result, the rotation mechanism 158 causes the brush 151 to rotate. The control unit 21 then controls the swing arm 152 (FIG. 3) so that the brush 151 moves from the standby position P2 to the application position P1 (FIG. 2). As a result, the swing arm 152 moves the brush 151 from the standby position P2 to the application position P1. That is, the control unit 21 controls the swing arm 152 so that the rotating brush 151 contacts the end surface portion 51 of the substrate W. As a result, the swing arm 152 brings the rotating brush 151 into contact with the end surface portion 51 of the substrate W. Therefore, the liquid repellent agent is applied to the end surface portion 51 of the substrate W. When the application of the liquid repellent agent is completed, the swing arm 152 moves the brush 151 to the standby position P2, and the rotation mechanism 158 stops the rotation of the brush 151.
次に、工程Ｓ５において、制御部２１は、基板Ｗの付着した撥液剤を加熱するように、加熱部２０（図３）を制御する。その結果、加熱部２０は、撥液剤を加熱して、撥液剤を乾燥させる。その結果、撥液剤に含まれる撥液物質が基板Ｗの端面部５１に付着する。
Next, in step S5, the control unit 21 controls the heating unit 20 (FIG. 3) to heat the liquid repellent agent attached to the substrate W. As a result, the heating unit 20 heats the liquid repellent and dries the liquid repellent. As a result, the liquid repellent substance contained in the liquid repellent agent adheres to the end surface portion 51 of the substrate W.
次に、工程Ｓ６において、制御部２１は、基板Ｗの回転を停止するように、スピンチャック１３を制御する。その結果、スピンチャック１３は、基板Ｗの回転を停止する。
Next, in step S6, the control unit 21 controls the spin chuck 13 to stop the rotation of the substrate W. As a result, the spin chuck 13 stops rotating the substrate W.
次に、工程Ｓ７において、制御部２１は、基板Ｗを撥液剤塗布ユニット５から搬出するように、センターロボットＣＲを制御する。その結果、センターロボットＣＲは、基板Ｗを撥液剤塗布ユニット５から搬出する。
Next, in step S7, the control unit 21 controls the central robot CR to carry out the substrate W from the liquid repellent coating unit 5. As a result, the center robot CR carries out the substrate W from the liquid repellent application unit 5.
次に、工程Ｓ８において、制御部２１は、撥液物質が端面部５１に付着した基板Ｗを処理ユニット１（図１）に搬入するように、センターロボットＣＲを制御する。その結果、センターロボットＣＲは、基板Ｗを処理ユニット１に搬入する。
Next, in step S8, the control unit 21 controls the central robot CR to carry the substrate W with the liquid-repellent substance adhered to the end surface portion 51 into the processing unit 1 (FIG. 1). As a result, the central robot CR carries the substrate W into the processing unit 1.
次に、工程Ｓ９において、制御部２１は、処理液によって基板Ｗを処理するように、処理ユニット１を制御する。その結果、処理ユニット１は、処理液によって基板Ｗを処理する。一例として、処理ユニット１の裏面用ノズル８（図１）は、処理液を基板Ｗの裏面Ａ２に吐出することで、基板Ｗの裏面Ａ２を処理する。他の例として、処理ユニット１の表面用ノズル７（図１）は、処理液を基板Ｗの表面Ａ１に吐出することで、基板Ｗの表面Ａ１を処理する。
Next, in step S9, the control unit 21 controls the processing unit 1 to process the substrate W with the processing liquid. As a result, the processing unit 1 processes the substrate W using the processing liquid. As an example, the back surface nozzle 8 (FIG. 1) of the processing unit 1 processes the back surface A2 of the substrate W by discharging a processing liquid onto the back surface A2 of the substrate W. As another example, the surface nozzle 7 (FIG. 1) of the processing unit 1 processes the surface A1 of the substrate W by discharging a processing liquid onto the surface A1 of the substrate W.
次に、工程Ｓ１０において、制御部２１は、基板Ｗを処理ユニット１から搬出するように、センターロボットＣＲを制御する。その結果、センターロボットＣＲは、基板Ｗを処理ユニット１から搬出する。そして、処理は終了する。
Next, in step S10, the control unit 21 controls the central robot CR to carry out the substrate W from the processing unit 1. As a result, the center robot CR carries out the substrate W from the processing unit 1. Then, the process ends.
以上、図１０を参照して説明したように、本実施形態に係る基板処理方法によれば、基板Ｗの端面部５１にブラシ１５１を接触させることで、基板Ｗの端面部５１に撥液剤を塗布する（工程Ｓ４）。従って、撥液剤が飛び散ることを抑制できるため、余分な撥液剤の吸引工程が不要である。よって、処理工程の増加を抑制しつつ、基板Ｗの端面部５１以外の部分に余分な撥液剤が塗布されることを抑制できる。
As described above with reference to FIG. 10, according to the substrate processing method according to the present embodiment, by bringing the brush 151 into contact with the end surface portion 51 of the substrate W, the liquid repellent agent is applied to the end surface portion 51 of the substrate W. Coating (Step S4). Therefore, since the liquid repellent can be prevented from scattering, an extra liquid repellent suction step is not necessary. Therefore, while suppressing an increase in the number of processing steps, it is possible to suppress excessive liquid repellent from being applied to portions other than the end surface portion 51 of the substrate W.
また、本実施形態によれば、工程Ｓ９において、例えば、基板Ｗの裏面Ａ２に処理液が吐出された場合であっても、処理液が基板Ｗの表面Ａ１に回り込むことを抑制できる。なぜなら、工程Ｓ４で基板Ｗの端面部５１に撥液剤を塗布し、工程Ｓ５で基板Ｗの端面部５１の撥液剤を乾燥させることで、基板Ｗの端面部５１には撥液物質が付着しているからである。
Furthermore, according to the present embodiment, even if the processing liquid is discharged onto the back surface A2 of the substrate W in step S9, for example, it is possible to suppress the processing liquid from going around to the front surface A1 of the substrate W. This is because by applying a liquid repellent agent to the end surface portion 51 of the substrate W in step S4 and drying the liquid repellent agent on the end surface portion 51 of the substrate W in step S5, the liquid repellent material adheres to the end surface portion 51 of the substrate W. This is because
以上、図面を参照して本発明の実施形態について説明した。ただし、本発明は、上記の実施形態に限られるものではなく、その要旨を逸脱しない範囲で種々の態様において実施できる。また、上記の実施形態に開示される複数の構成要素は適宜改変可能である。例えば、ある実施形態に示される全構成要素のうちのある構成要素を別の実施形態の構成要素に追加してもよく、または、ある実施形態に示される全構成要素のうちのいくつかの構成要素を実施形態から削除してもよい。
The embodiments of the present invention have been described above with reference to the drawings. However, the present invention is not limited to the above-described embodiments, and can be implemented in various forms without departing from the spirit thereof. Further, the plurality of components disclosed in the above embodiments can be modified as appropriate. For example, some of the components shown in one embodiment may be added to the components of another embodiment, or some of the components shown in one embodiment may be configured. Elements may be deleted from the embodiment.
また、図面は、発明の理解を容易にするために、それぞれの構成要素を主体に模式的に示しており、図示された各構成要素の厚さ、長さ、個数、間隔等は、図面作成の都合上から実際とは異なる場合もある。また、上記の実施形態で示す各構成要素の構成は一例であって、特に限定されるものではなく、本発明の効果から実質的に逸脱しない範囲で種々の変更が可能であることは言うまでもない。
In addition, the drawings mainly schematically show each component in order to facilitate understanding of the invention, and the thickness, length, number, spacing, etc. of each component shown in the drawings are Actual results may differ due to circumstances. Further, the configuration of each component shown in the above embodiment is an example, and is not particularly limited, and it goes without saying that various changes can be made without substantially departing from the effects of the present invention. .
（１）図４及び図１０を参照して説明した実施形態では、ブラシ１５１は自転機構１５８によって自転した。ただし、ブラシ１５１は、基板Ｗに従動して自転してもよい。なお、基板Ｗの端面部５１に撥液剤を塗布できる限りにおいて、ブラシ１５１は自転しなくてもよい。
(1) In the embodiment described with reference to FIGS. 4 and 10, the brush 151 was rotated by the rotation mechanism 158. However, the brush 151 may rotate following the substrate W. Note that the brush 151 does not need to rotate as long as the liquid repellent can be applied to the end surface portion 51 of the substrate W.
（２）図１０を参照して説明した実施形態では、基板Ｗに撥液剤を塗布した後、処理ユニット１が処理液によって基板Ｗを処理した。ただし、基板Ｗに撥液剤を塗布した後、撥液剤塗布ユニット５が、処理液によって基板Ｗを処理してもよい。この場合、撥液剤塗布ユニット５が、処理液を基板Ｗに吐出するノズルを備える。例えば、撥液剤塗布ユニット５が、表面用ノズル７及び／又は裏面用ノズル８を備えていてもよい。
(2) In the embodiment described with reference to FIG. 10, after applying the liquid repellent to the substrate W, the processing unit 1 processed the substrate W with the processing liquid. However, after applying the liquid repellent to the substrate W, the liquid repellent applying unit 5 may treat the substrate W with the treatment liquid. In this case, the liquid repellent coating unit 5 includes a nozzle that discharges the processing liquid onto the substrate W. For example, the liquid repellent application unit 5 may include a front surface nozzle 7 and/or a back surface nozzle 8.
（３）図３を参照して説明したブラシ１５１は、略円柱形状を有していたが、ブラシ１５１の形状は特に限定されない。ブラシ１５１のうち基板Ｗの端面部５１に接触する部分が、少なくとも、例えば、略円板形状又は略円柱形状であればよい。この場合、曲率半径Ｒ０が設定されるブラシ１５１の半径Ｒは、ブラシ１５１のうち基板Ｗの端面部５１に接触する部分の半径を示す。例えば、ブラシ１５１は、略逆円錐台形状部分と、略円板状部分と、略円錐台形状部分とが、軸方向ＡＤに並んだ一体形状を有していてもよい。
(3) Although the brush 151 described with reference to FIG. 3 had a substantially cylindrical shape, the shape of the brush 151 is not particularly limited. It is sufficient that at least a portion of the brush 151 that contacts the end surface portion 51 of the substrate W has, for example, a substantially disk shape or a substantially cylindrical shape. In this case, the radius R of the brush 151 for which the radius of curvature R0 is set indicates the radius of the portion of the brush 151 that contacts the end surface portion 51 of the substrate W. For example, the brush 151 may have an integral shape in which a substantially inverted truncated conical portion, a substantially disc-shaped portion, and a substantially truncated conical portion are lined up in the axial direction AD.
（４）図３を参照して説明したスピンチャック１３は、真空吸着式であったが、例えば、挟持式又はベルヌーイ式であってもよい。
(4) Although the spin chuck 13 described with reference to FIG. 3 is of a vacuum suction type, it may be of a clamping type or a Bernoulli type, for example.
本発明は、基板処理装置及び基板処理方法に好適に用いられる。
The present invention is suitably used in a substrate processing apparatus and a substrate processing method.
１３ スピンチャック（基板保持部）
１７ 撥液剤供給部
１００ 基板処理装置
１５１ ブラシ（塗布部材）
１５８ 自転機構
１５９ 付勢機構
５１１ 表面縁部
５１２ 表面肩部
５１３ 裏面縁部
５１４ 裏面肩部
５１５ 側面部
Ｗ 基板 13 Spin chuck (substrate holding part)
17 Liquidrepellent supply unit 100 Substrate processing device 151 Brush (application member)
158Rotation mechanism 159 Biasing mechanism 511 Front edge 512 Front shoulder 513 Back edge 514 Back shoulder 515 Side surface W Substrate
１７ 撥液剤供給部
１００ 基板処理装置
１５１ ブラシ（塗布部材）
１５８ 自転機構
１５９ 付勢機構
５１１ 表面縁部
５１２ 表面肩部
５１３ 裏面縁部
５１４ 裏面肩部
５１５ 側面部
Ｗ 基板 13 Spin chuck (substrate holding part)
17 Liquid
158
Claims (14)
- 基板を保持しつつ前記基板を回転させる基板保持部と、
回転中の前記基板の径方向外側の端面部に接触することで、前記基板を処理する処理液を弾くことの可能な撥液物質を含む撥液剤を、前記基板の前記端面部に塗布する塗布部材と
を備える、基板処理装置。 a substrate holder that rotates the substrate while holding the substrate;
Applying a liquid repellent containing a liquid repellent substance capable of repelling a processing liquid for treating the substrate by contacting the radially outer end surface of the rotating substrate to the end surface of the substrate. A substrate processing apparatus, comprising: a member; - 前記塗布部材は、自転しながら、前記撥液剤を前記基板の前記端面部に塗布する、請求項１に記載の基板処理装置。 The substrate processing apparatus according to claim 1, wherein the application member applies the liquid repellent to the end surface portion of the substrate while rotating.
- 前記基板の前記端面部は、表面縁部と、表面肩部と、側面部と、裏面肩部と、裏面縁部とを有し、
前記表面縁部は、前記基板の表面と裏面とのうちの前記表面側において、前記基板の本体よりも径方向外側に位置し、
前記表面肩部は、前記表面側において、前記表面縁部よりも径方向外側に位置し、
前記裏面縁部は、前記裏面側において、前記基板の前記本体よりも径方向外側に位置し、
前記裏面肩部は、前記裏面側において、前記裏面縁部よりも径方向外側に位置し、
前記側面部は、前記基板の径方向の最も外側に位置し、
前記塗布部材は、前記側面部に対して前記撥液剤を塗布する、請求項１又は請求項２に記載の基板処理装置。 The end surface portion of the substrate has a front edge, a front shoulder, a side surface, a back shoulder, and a back edge,
The surface edge portion is located radially outward from the main body of the substrate on the front surface side of the front surface and the back surface of the substrate,
The surface shoulder portion is located radially outward from the surface edge on the surface side,
The back edge portion is located radially outward from the main body of the substrate on the back side,
The back shoulder portion is located radially outward from the back edge on the back side,
The side portion is located at the outermost side in the radial direction of the substrate,
3. The substrate processing apparatus according to claim 1, wherein the application member applies the liquid repellent to the side surface. - 前記塗布部材は、前記表面肩部、前記側面部、及び、前記裏面肩部に対して、前記撥液剤を塗布する、請求項３に記載の基板処理装置。 The substrate processing apparatus according to claim 3, wherein the application member applies the liquid repellent to the front shoulder, the side surface, and the back shoulder.
- 前記塗布部材の少なくとも一部は、前記基板の前記端面部に存在するノッチに進入し、前記ノッチの底点に接触する、請求項１から請求項４のいずれか１項に記載の基板処理装置。 The substrate processing apparatus according to any one of claims 1 to 4, wherein at least a portion of the application member enters a notch existing in the end face portion of the substrate and contacts a bottom point of the notch. .
- 前記塗布部材を前記基板の径方向内側に向けて付勢する付勢機構を更に備える、請求項５に記載の基板処理装置。 The substrate processing apparatus according to claim 5, further comprising a biasing mechanism that biases the application member radially inward of the substrate.
- 前記塗布部材に対して前記撥液剤を供給する撥液剤供給部を更に備える、請求項１から請求項６のいずれか１項に記載の基板処理装置。 The substrate processing apparatus according to any one of claims 1 to 6, further comprising a liquid repellent supply unit that supplies the liquid repellent to the application member.
- 基板を保持しつつ前記基板を回転させる工程と、
回転中の前記基板の径方向外側の端面部に塗布部材を接触させることで、前記基板を処理する処理液を弾くことの可能な撥液物質を含む撥液剤を、前記基板の前記端面部に塗布する工程と
を含む、基板処理方法。 rotating the substrate while holding the substrate;
By bringing a coating member into contact with the radially outer end surface of the rotating substrate, a liquid repellent agent containing a liquid repellent substance capable of repelling a processing solution for treating the substrate is applied to the end surface of the substrate. A method for treating a substrate, the method comprising: applying a coating. - 前記撥液剤を塗布する前記工程では、前記塗布部材を自転させながら、前記撥液剤を前記基板の前記端面部に塗布する、請求項８に記載の基板処理方法。 The substrate processing method according to claim 8, wherein in the step of applying the liquid repellent, the liquid repellent is applied to the end surface portion of the substrate while rotating the application member.
- 前記基板の前記端面部は、表面縁部と、表面肩部と、側面部と、裏面肩部と、裏面縁部とを有し、
前記表面縁部は、前記基板の表面と裏面とのうちの前記表面側において、前記基板の本体よりも径方向外側に位置し、
前記表面肩部は、前記表面側において、前記表面縁部よりも径方向外側に位置し、
前記裏面縁部は、前記裏面側において、前記基板の前記本体よりも径方向外側に位置し、
前記裏面肩部は、前記裏面側において、前記裏面縁部よりも径方向外側に位置し、
前記側面部は、前記基板の径方向の最も外側に位置し、
前記撥液剤を塗布する前記工程では、前記側面部に対して前記撥液剤を塗布する、請求項８又は請求項９に記載の基板処理方法。 The end surface portion of the substrate has a front edge, a front shoulder, a side surface, a back shoulder, and a back edge,
The surface edge portion is located radially outward from the main body of the substrate on the front surface side of the front surface and the back surface of the substrate,
The surface shoulder portion is located radially outward from the surface edge on the surface side,
The back edge portion is located radially outward from the main body of the substrate on the back side,
The back shoulder portion is located radially outward from the back edge on the back side,
The side portion is located at the outermost side in the radial direction of the substrate,
10. The substrate processing method according to claim 8, wherein in the step of applying the liquid repellent, the liquid repellent is applied to the side surface. - 前記撥液剤を塗布する前記工程では、前記表面肩部、前記側面部、及び、前記裏面肩部に対して、前記撥液剤を塗布する、請求項１０に記載の基板処理方法。 The substrate processing method according to claim 10, wherein in the step of applying the liquid repellent, the liquid repellent is applied to the front shoulder, the side surface, and the back shoulder.
- 前記撥液剤を塗布する前記工程では、前記塗布部材の少なくとも一部は、前記基板の前記端面部に存在するノッチに進入し、前記ノッチの底点に接触する、請求項８から請求項１１のいずれか１項に記載の基板処理方法。 In the step of applying the liquid repellent, at least a portion of the application member enters the notch present in the end surface portion of the substrate and contacts the bottom point of the notch. The substrate processing method according to any one of the items.
- 前記撥液剤を塗布する前記工程では、前記塗布部材を前記基板の径方向内側に向けて付勢する、請求項１２に記載の基板処理方法。 13. The substrate processing method according to claim 12, wherein in the step of applying the liquid repellent, the application member is urged radially inward of the substrate.
- 前記塗布部材に対して前記撥液剤を供給する工程を更に含む、請求項８から請求項１３のいずれか１項に記載の基板処理方法。 The substrate processing method according to any one of claims 8 to 13, further comprising the step of supplying the liquid repellent to the application member.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0992646A (en) * | 1995-09-26 | 1997-04-04 | Hitachi Ltd | Method and device for coating passivation material |
| JP2020155756A (en) * | 2019-03-18 | 2020-09-24 | 芝浦メカトロニクス株式会社 | Substrate processing apparatus and substrate processing method |
| JP2020155496A (en) * | 2019-03-18 | 2020-09-24 | 芝浦メカトロニクス株式会社 | Substrate processing apparatus and substrate processing method |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0992646A (en) * | 1995-09-26 | 1997-04-04 | Hitachi Ltd | Method and device for coating passivation material |
| JP2020155756A (en) * | 2019-03-18 | 2020-09-24 | 芝浦メカトロニクス株式会社 | Substrate processing apparatus and substrate processing method |
| JP2020155496A (en) * | 2019-03-18 | 2020-09-24 | 芝浦メカトロニクス株式会社 | Substrate processing apparatus and substrate processing method |
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