WO2023169135A1 - 一种直筒方形电磁式离子注入设备的离子发生装置 - Google Patents

一种直筒方形电磁式离子注入设备的离子发生装置 Download PDF

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WO2023169135A1
WO2023169135A1 PCT/CN2023/075305 CN2023075305W WO2023169135A1 WO 2023169135 A1 WO2023169135 A1 WO 2023169135A1 CN 2023075305 W CN2023075305 W CN 2023075305W WO 2023169135 A1 WO2023169135 A1 WO 2023169135A1
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ion
straight
mounting surfaces
ion implantation
generating device
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PCT/CN2023/075305
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English (en)
French (fr)
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王向红
孟秋静
戴正阳
李云庆
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上海电子信息职业技术学院
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Publication of WO2023169135A1 publication Critical patent/WO2023169135A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation

Definitions

  • the utility model relates to the technical field of ion implantation, in particular to an ion generating device of a straight square electromagnetic ion implantation equipment.
  • Ion implantation equipment is one of the high-voltage small accelerators with the largest number of applications. It obtains the required ions from an ion source and accelerates it to obtain an ion beam with an energy of several hundred kiloelectron volts. It is used for ion implantation of semiconductor materials, large-scale integrated circuits and devices, and is also used for surface modification and manufacturing of metal materials. membrane etc.
  • the metal ions generated by the metal ion source in existing ion implantation equipment are often accompanied by some impurity particles.
  • the ions move at high speed in the pipeline, they It may collide with air atoms or impurity particles, resulting in charge exchange.
  • the ions transfer the charge to the air atoms or impurity particles, and become electrically neutral. Neutral ions have no effect on doping, so neutral ions need to be avoided. To produce, it is necessary to increase the ionization rate of the metal ion source.
  • This utility model is to provide an ion generating device for a straight square electromagnetic ion implantation device in order to overcome the shortcomings and deficiencies of the prior art.
  • an ion generating device of a straight-cylindrical square electromagnetic ion implantation equipment which includes an ion sputtering shell with a straight-cylindrical square-shaped cavity. One end of the straight-cylindrical square-shaped cavity is closed and the other end is closed. One end is open to form an ion outlet.
  • the ion sputtering shell is provided with two mounting surfaces forming a certain angle at the closed end. The two mounting surfaces are symmetrical to the center axis of the straight-cylindrical square cavity. The two mounting surfaces There is a set of cathode arc source components.
  • the target surfaces of the metal targets in the cathode arc source components on the two mounting surfaces form an included angle greater than 0 and less than or equal to 135° and are set toward the ion outlet direction or formed parallel and Relative setting relationship;
  • One side of the ion outlet is provided with an ion extraction component, a mass analysis device and an accelerating tube in sequence.
  • the metal target surfaces of the cathode arc source assemblies respectively fixed on the two mounting surfaces form an included angle greater than 0 and less than or equal to 90°.
  • the ion sputtering housing is provided with two parallel mounting surfaces near the closed end, and the target surfaces of the metal targets in the cathode arc source assemblies respectively fixed on the two mounting surfaces form parallel and relatively opposite target surfaces. relation.
  • a rectangular coil is set on the outer wall of the ion sputtering shell, and the rectangular coil is used to form a magnetic field that focuses and accelerates positively charged particles.
  • the accelerating tube is composed of multiple groups of electrodes isolated by a medium, and the voltages on the electrodes are accumulated sequentially to accelerate ions.
  • the mass analysis device is a magnetic analyzer used to separate required ions from the mixed ion beam.
  • the ion extraction component is used to extract ions from the negative electrode to form an ion beam composed of positive ions.
  • the cathode arc source assembly in this utility model will produce metal ions and some particles, in which the metal ions will be focused and accelerated under the action of the magnetic field formed by the rectangular coil, and then pulled through the ion outlet by the ion extraction assembly.
  • the uncharged particles move forward in the direction of their own speed and are deposited on the inner wall of the ion sputtering shell to improve the ionization efficiency; at the same time, the ion extraction component forms a positive ion beam, which is further screened out by the mass analysis device.
  • the required ions are then accelerated and guided by the accelerating tube into the ion injection shell.
  • the ion sputtering shell with a straight square cavity has a large volume and a short distance, so the deposition rate will be greatly increased.
  • Figure 1 is a schematic structural diagram of Embodiment 1 of the present utility model (the ion implantation housing is omitted);
  • Figure 2 is a simple schematic diagram of Embodiment 2 of the present utility model;
  • Figure 3 is a simple schematic diagram of Embodiment 3 of the present utility model;
  • an ion generating device of a straight-cylindrical square electromagnetic ion implantation equipment which includes an ion sputtering housing 2 with a straight-cylindrical square-shaped cavity. One end of the cavity is closed and the other end is open to form an ion outlet 5.
  • the ion sputtering shell 2 is provided with two mounting surfaces 21 forming a certain angle at the closed end. The two mounting surfaces 21 are centered in the straight-cylindrical square cavity.
  • Axis symmetry there is a set of cathode arc source assemblies 1 on the two mounting surfaces 21, and an angle of greater than 0 and less than or equal to 135° is formed between the target surfaces of the metal targets in the cathode arc source assemblies 1 on the two mounting surfaces.
  • the included angle is set toward the direction of the ion outlet 5 or forms a parallel and relatively arranged relationship, so that the uncharged particles therein move forward along the direction of their own speed and are deposited on the inner wall of the ion sputtering shell 2 to enhance the ionization.
  • Efficiency One side of the ion outlet 5 is provided with an ion extraction assembly 4, a mass analysis device 6 and an accelerating tube 7 in sequence.
  • the metal target surfaces in the cathode arc source assembly 1 respectively fixed on the two mounting surfaces 21 form an included angle greater than 0 and less than or equal to 90°. In this embodiment, it is specifically set to 90°.
  • the cathode arc source assembly 1 includes a target, a target base for fixing the target, an arc starting device, and other necessary or non-essential parts of the cathode arc source.
  • a target for fixing the target
  • an arc starting device for fixing the target
  • other necessary or non-essential parts of the cathode arc source for specific structures, please refer to patents CN201210444314.1, CN201811360933.6, etc. Structural advantages of the cathode arc source structure.
  • the cathode arc source assembly 1 After the cathode arc source assembly 1 is powered on, the arc spots generated by the arc ignition device are etched on the target surface to produce ions and particles. For example, if a metal target (such as chromium) is used, metal ions and particles are produced. Such particles follow the metal. The deposition of ions will adhere to the film, making the coating surface uneven.
  • the cathode arc source component 1 emits charged metal ions or uncharged particles. When emitted, the initial velocity direction is toward the direction directly in front of the target surface, and the charged metal ions are emitted. Under the action of the electric field, the moving direction of the ions shifts toward the direction of the ion outlet 5 until it leaves the ion outlet 5.
  • the magnetic field formed by the rectangular coil 3 accelerates the charged metal ions to leave the ion outlet 5 and makes the charged metal ions relatively more concentrated. Uncharged particles are not affected by electric and magnetic fields and move forward along the direction of their initial velocity until they are deposited on the side wall of the ion sputtering shell 2.
  • the ion sputtering shell with a straight-cylindrical square cavity has a large volume and a short distance. , the deposition rate will be greatly increased.
  • a rectangular coil 2 is set on the outer wall of the ion sputtering shell 1.
  • the rectangular coil 2 is used to form a magnetic field that focuses and accelerates positively charged particles.
  • the rectangular coil can be connected to an arbitrarily programmable linear coil current or a remotely adjustable rectangular wave coil current with a larger period and capable of linear regulation, which can be changed by controlling the current flowing through the coil.
  • the strength and distribution of the magnetic field change the movement paths of electrons and ions.
  • the accelerating tube 7 is composed of multiple groups of electrodes isolated by a medium. The voltages on the electrodes are accumulated sequentially to accelerate ions. When positive ions enter the accelerating tube 7, each electrode accelerates the ions, and the movement speed of the ions increases. It is the superposition of various levels of acceleration. The higher the total voltage, the faster the ions move, that is, the greater the kinetic energy, and finally the required ion injection energy is obtained.
  • mass analysis devices 6 are magnetic analyzers. 60° or 90° sector magnets are commonly used in analyzers.
  • the mass analyzer 6 of the ion implantation equipment can separate the required ions from the mixed ion beam. .
  • the ion extraction component 51 uses a negatively biased suction electrode to suck the positively charged ions out of the plasma to form an ion beam.
  • the mass analysis device 6 the accelerating tube 7 and the ion extraction assembly 5 can all adopt conventional devices well known to those skilled in the art.
  • Figure 2 shows the second embodiment of the present utility model:
  • the structure of this embodiment is roughly the same as that of Embodiment 1. The biggest difference is the arrangement of the internal structure of the ion sputtering housing.
  • the two mounting surfaces of this embodiment form an included angle of 60°.
  • the target surfaces of the metal targets in the cathode arc source assembly 1 on the two mounting surfaces form an included angle of 60°.
  • a transition surface is provided between the two mounting surfaces to avoid insufficient space for the cathode arc source assembly 2. Install.
  • Figure 3 shows the third embodiment of the present utility model:
  • the structure of this embodiment is roughly the same as that of Embodiment 1.
  • the biggest difference is the arrangement of the internal structure of the ion sputtering housing.
  • the target surfaces of the metal targets in the cathode arc source assembly 1 on the two mounting surfaces are separated from each other. Arranged at a certain distance and parallel to each other, the generated uncharged particles are concentrated in the cavity between the target surfaces of the metal targets in the cathode arc source assembly 1 on the two mounting surfaces until they move to the target surface of the opposite metal target.
  • the charged metal ions leave the cavity between the two metal target surfaces under the action of the electric field formed by the negative bias voltage, and are relatively concentrated and pulled away from the ion outlet 5 by the ion extraction component.
  • a rectangular coil 3 is added to make the charged carbon ions leave faster and in a focused manner.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

一种直筒方形电磁式离子注入设备的离子发生装置，属于离子注入技术领域，其包括具有直筒方形状空腔的离子溅射壳体（2），直筒方形状空腔一端封闭且另一端为离子出口（5），离子溅射壳体（2）在封闭一端设有两个形成一定夹角的安装面（21），两个安装面（21）上均有一组阴极弧源组件（1），离子出口（5）一侧依次设有离子引出组件（4）、质量分析装置（6）与加速管（7）；不带电的粒子沿其本身的速度方向移动，沉积在离子溅射壳体（2）内壁，而带电的金属离子在磁场作用下会聚焦及加速，通过离子出口（5），提高了离化率；同时直筒方形状空腔的离子溅射壳体（2）的体积大，路程短，沉积速率将大幅度提升。

Description

一种直筒方形电磁式离子注入设备的离子发生装置 技术领域
本实用新型涉及离子注入技术领域，特别涉及一种直筒方形电磁式离子注入设备的离子发生装置。
 背景技术
离子注入设备是高压小型加速器中的一种，应用数量最多。它是由离子源得到所需要的离子，经过加速得到几百千电子伏能量的离子束流，用做半导体材料、大规模集成电路和器件的离子注入，还用于金属材料表面改性和制膜等。
现有离子注入设备中金属离子源产生的金属离子往往会伴随一些杂质颗粒，同时设备运行过程中还有未排除的空气原子以及未完全离化的杂质颗粒，离子在管道中高速运动时，就可能和空气原子或者杂质颗粒发生碰撞，从而发生电荷交换，离子将电荷传递给空气原子或者杂质颗粒，而呈电中性，中性的离子对于掺杂是没有作用的，因此需避免中性离子的产生，即需提高金属离子源的离化率。
 技术问题
本实用新型的目的是为了克服现有技术存在的缺点和不足，而提供一种直筒方形电磁式离子注入设备的离子发生装置。
 技术解决方案
本实用新型所采取的技术方案如下：一种直筒方形电磁式离子注入设备的离子发生装置，其包括具有直筒方形状空腔的离子溅射壳体，所述直筒方形状空腔一端封闭且另一端为开口形成离子出口，所述离子溅射壳体在封闭一端设有两个形成一定夹角的安装面，两个安装面以直筒方形状空腔中心轴对称，所述两个安装面上均有一组阴极弧源组件，在两个安装面上的阴极弧源组件中金属靶材的靶面之间形成大于0以及小于等于135°的夹角且朝向离子出口方向设置或形成平行的且相对设置的关系；
所述离子出口一侧依次设有离子引出组件、质量分析装置与加速管。
所述分别固定在两个安装面上的阴极弧源组件中金属靶靶面之间形成大于0以及小于等于90°的夹角。
所述离子溅射壳体在接近封闭一端设有两个相平行的安装面，分别固定在两个安装面上的阴极弧源组件中金属靶材的靶面之间形成平行的且相对设置的关系。
所述离子溅射壳体外壁套设有矩形线圈，所述矩形线圈用于形成对带正电粒子形成聚焦及加速作用的磁场。
所述加速管由多组被介质隔离的电极组成，电极上的电压依次累加，用于加速离子。
所述质量分析装置为磁分析器用于将所需要的离子从混合的离子束中分离出来。
所述离子引出组件为负极吸出用于形成正离子组成的离子束。
 有益效果
本实用新型的有益效果如下：本实用新型中阴极弧源组件会产生金属离子以及一些颗粒，其中金属离子在矩形线圈形成的磁场作用下会聚焦及加速，再由离子引出组件牵引通过离子出口，而其中的不带电的粒子沿其本身的速度方向向前移动，沉积在离子溅射壳体内壁上，提升离化效率；同时由离子引出组件形成正离子束，经过质量分析装置进一步地筛选出所需的离子，再由加速管加速导向离子注入壳体；另外，直筒方形状空腔的离子溅射壳体的体积大，路程短，沉积速率将大幅度提升。
 附图说明
为了更清楚地说明本实用新型实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本实用新型的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，根据这些附图获得其他的附图仍属于本实用新型的范畴。
图1为本实用新型实施例一的结构示意图（省略离子注入壳体）；
图2为本实用新型实施例二的简易示意图；
图3为本实用新型实施例三的简易示意图；
图中，1-阴极弧源组件，2-离子溅射壳体，21-安装面，3-矩形线圈，4-离子引出组件， 5-离子出口， 6-质量分析装置，7-加速管。
本发明的最佳实施方式
为使本实用新型的目的、技术方案和优点更加清楚，下面将结合附图对本实用新型作进一步地详细描述。
需要说明的是，本实用新型实施例中所有使用“第一”和“第二”的表述均是 为了区分两个相同名称非相同的实体或者非相同的参量，可见“第一”“第二” 仅为了表述的方便，不应理解为对本实用新型实施例的限定，后续实施例对此不再 一一说明。
本实用新型所提到的方向和位置用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「顶部」、「底部」、「侧面」等，仅是参考附图的方向或位置。因此，使用的方向和位置用语是用以说明及理解本实用新型，而非对本实用新型保护范围的限制。
如图1所示，为本实用新型的实施例一：一种直筒方形电磁式离子注入设备的离子发生装置，其包括具有直筒方形状空腔的离子溅射壳体2，所述直筒方形状空腔一端封闭且另一端为开口形成离子出口5，所述离子溅射壳体2在封闭一端设有两个形成一定夹角的安装面21，两个安装面21以直筒方形状空腔中心轴对称，所述两个安装面21上均有一组阴极弧源组件1，在两个安装面上的阴极弧源组件1中金属靶材的靶面之间形成大于0以及小于等于135°的夹角且朝向离子出口5方向设置或形成平行的且相对设置的关系，使其中的不带电的粒子沿其本身的速度方向向前移动，沉积在离子溅射壳体2内壁上，提升离化效率；所述离子出口5一侧依次设有离子引出组件4、质量分析装置6与加速管7。
所述分别固定在两个安装面21上的阴极弧源组件1中金属靶靶面之间形成大于0以及小于等于90°的夹角，在本实施例中，具体设置为90°。
阴极弧源组件1中包括靶材、固定靶材的靶材底座、引弧装置以及其它阴极弧源中必要或非必要的零部件，具体结构可以参见专利CN201210444314.1、CN201811360933.6等具有不同结构优势的阴极弧源结构。
阴极弧源组件1接通电源后，引弧装置产生的弧斑在靶面上刻蚀产生离子和颗粒，比如采用金属靶（如铬），则产生金属离子和颗粒，这种颗粒随着金属离子的沉积会附着在膜上，使镀膜表面不平整，工作时，阴极弧源组件1发出带电金属离子或不带电的颗粒，发出时，初始速度方向为向靶面正前方的方向，带电金属离子在电场作用下其移动方向向离子出口5的方向偏移直至从离子出口5处离开，矩形线圈3形成的磁场加速带电金属离子从离子出口5处离开并且使带电金属离子相对更集中，而不带电的颗粒不受电场和磁场的影响，沿其初始速度方向前移，直至沉积在离子溅射壳体2侧壁上，直筒方形状空腔的离子溅射壳体的体积大，路程短，沉积速率将大幅度提升。
进一步的，所述离子溅射壳体1外壁套设有矩形线圈2，所述矩形线圈2用于形成对带正电粒子形成聚焦及加速作用的磁场。
在本实施例中，矩形线圈中可以接入可任意编程的直线线圈电流或具有可远程调节的具有较大周期并可实现线性调控的矩形波线圈电流，通过对线圈所通电流的控制可以改变磁场的强弱和分布，从而改变电子和离子的运动路径。
进一步的，所述加速管7由多组被介质隔离的电极组成，电极上的电压依次累加，用于加速离子，当正离子进入到加速管7后，各个电极为离子加速，离子的运动速度是各级加速的叠加，总的电压越高，离子的运动速度越快，即动能越大，最终得到所需离子注入能量。
进一步的，所述质量分析装置6以磁分析器居多，在分析器中常用60°或90°扇形磁铁，离子注入设备的质量分析器6可以将所需要的离子从混合的离子束中分离出来。
进一步的，所述离子引出组件51即通过一负偏压的吸极将带正电的离子从等离子体中吸出来形成离子束。
在本实施例中，质量分析装置6、加速管7与离子引出组件5均可以采用本领域技术人员所熟知的常规装置。
如图2所示为本实用新型实施例二：
本实施例与实施例一的结构大致相同，其中最大的不同为离子溅射壳体内部结构的布置不同，本实施例的两个安装面之间形成60°的夹角，本实施例的两个安装面上的阴极弧源组件1中金属靶材的靶面之间形成60°的夹角，本实施例的两个安装面之间设有过渡面，避免空间不够阴极弧源组件2的安装。
如图3所示为本实用新型实施例三：
本实施例与实施例一的结构大致相同，其中最大的不同为离子溅射壳体内部结构的布置不同，在两个安装面上的阴极弧源组件1中金属靶材的靶面之间相隔一定间距且相平行设置，生成的不带电的颗粒集中在两个安装面上的阴极弧源组件1中金属靶材的靶面之间的空腔，直至移动到对面的金属靶材靶面上，而带电的金属离子则在负偏压形成的电场作用下离开两个金属靶面之间的空腔，且相对集中地由离子引出组件牵引从离子出口5处离开，可以如实施例一所示，增设矩形线圈3，使带电的碳离子速度更快且聚焦地离开。
以上所揭露的仅为本实用新型较佳实施例而已，当然不能以此来限定本实用新型之权利范围，因此依本实用新型权利要求所作的等同变化，仍属本实用新型所涵盖的范围。

Claims (7)

  1. 一种直筒方形电磁式离子注入设备的离子发生装置，其特征在于，包括具有直筒方形状空腔的离子溅射壳体（2），所述直筒方形状空腔一端封闭且另一端为开口形成离子出口（5），所述离子溅射壳体（2）在封闭一端设有两个形成一定夹角的安装面（21），两个安装面（21）以直筒方形状空腔中心轴对称，所述两个安装面（21）上均有一组阴极弧源组件（1），在两个安装面上的阴极弧源组件（1）中金属靶材的靶面之间形成大于0以及小于等于135°的夹角且朝向离子出口（5）方向设置或形成平行的且相对设置的关系；
    所述离子出口（5）一侧依次设有离子引出组件（4）、质量分析装置（6）与加速管（7）。
  2. 根据权利要求1所述的一种直筒方形电磁式离子注入设备的离子发生装置，其特征在于，所述分别固定在两个安装面（21）上的阴极弧源组件（1）中金属靶靶面之间形成大于0以及小于等于90°的夹角。
  3. 根据权利要求1所述的一种直筒方形电磁式离子注入设备的离子发生装置，其特征在于，所述离子溅射壳体（2）在接近封闭一端设有两个相平行的安装面，分别固定在两个安装面上的阴极弧源组件（2）中金属靶材的靶面之间形成平行的且相对设置的关系。
  4.  根据权利要求1所述的一种直筒方形电磁式离子注入设备的离子发生装置，其特征在于，所述离子溅射壳体（1）外壁套设有矩形线圈（3），所述矩形线圈（3）用于形成对带正电粒子形成聚焦及加速作用的磁场。
  5. 根据权利要求1所述的一种直筒方形电磁式离子注入设备的离子发生装置，其特征在于，所述加速管（7）由多组被介质隔离的电极组成，电极上的电压依次累加，用于加速离子。
  6. 根据权利要求1所述的一种直筒方形电磁式离子注入设备的离子发生装置，其特征在于，所述质量分析装置（6）为磁分析器用于将所需要的离子从混合的离子束中分离出来。
  7. 根据权利要求1所述的一种直筒方形电磁式离子注入设备的离子发生装置，其特征在于，所述离子引出组件（4）为负极吸出用于形成正离子组成的离子束。
PCT/CN2023/075305 2022-03-07 2023-02-10 一种直筒方形电磁式离子注入设备的离子发生装置 WO2023169135A1 (zh)

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CN1087128A (zh) * 1992-11-16 1994-05-25 四川大学 微波等离子体源离子注入装置
CN202246841U (zh) * 2011-06-09 2012-05-30 中国科学院金属研究所 一种中频磁控溅射法制备纳米硅薄膜的溅射装置
US9761424B1 (en) * 2011-09-07 2017-09-12 Nano-Product Engineering, LLC Filtered cathodic arc method, apparatus and applications thereof
CN112831759A (zh) * 2021-02-01 2021-05-25 江苏徐工工程机械研究院有限公司 一种磁场辅助阴极引弧装置及镀膜方法
CN114481025A (zh) * 2021-12-30 2022-05-13 温州职业技术学院 一种ta-C沉积镀膜方法
CN114752909A (zh) * 2022-03-07 2022-07-15 上海电子信息职业技术学院 一种提高离子离化率的离子注入方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1087128A (zh) * 1992-11-16 1994-05-25 四川大学 微波等离子体源离子注入装置
CN202246841U (zh) * 2011-06-09 2012-05-30 中国科学院金属研究所 一种中频磁控溅射法制备纳米硅薄膜的溅射装置
US9761424B1 (en) * 2011-09-07 2017-09-12 Nano-Product Engineering, LLC Filtered cathodic arc method, apparatus and applications thereof
CN112831759A (zh) * 2021-02-01 2021-05-25 江苏徐工工程机械研究院有限公司 一种磁场辅助阴极引弧装置及镀膜方法
CN114481025A (zh) * 2021-12-30 2022-05-13 温州职业技术学院 一种ta-C沉积镀膜方法
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