WO2023144346A1 - Dispositif optoélectronique et procédé de production de dispositif optoélectronique - Google Patents

Dispositif optoélectronique et procédé de production de dispositif optoélectronique Download PDF

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Publication number
WO2023144346A1
WO2023144346A1 PCT/EP2023/052081 EP2023052081W WO2023144346A1 WO 2023144346 A1 WO2023144346 A1 WO 2023144346A1 EP 2023052081 W EP2023052081 W EP 2023052081W WO 2023144346 A1 WO2023144346 A1 WO 2023144346A1
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WO
WIPO (PCT)
Prior art keywords
led
photoresist layer
providing
openings
carrier
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Application number
PCT/EP2023/052081
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German (de)
English (en)
Inventor
Andreas DOBNER
Bernd Barchmann
Thomas Schwarz
Sebastian Wittmann
Original Assignee
Ams-Osram International Gmbh
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Filing date
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Application filed by Ams-Osram International Gmbh filed Critical Ams-Osram International Gmbh
Publication of WO2023144346A1 publication Critical patent/WO2023144346A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Definitions

  • the present invention relates to an optoelectronic device and a method for producing an optoelectronic device.
  • the core of the invention is both soldering electrical connection surfaces of an optoelectronic device, in particular p-LED, and generating a conversion layer on a light emission surface of the optoelectronic device in a process sequence using two separate photo planes on a carrier.
  • By remelting the solder depots they form drop-shaped or dome-shaped and are available as these on the electrical connection surfaces of the optoelectronic devices or. recognizable .
  • the order of the steps of generating the solder depots and the conversion layer can vary. For example, first the solder depots for the p-LEDs in a first photoresist or. Stepped lacquer can be created on a carrier, then the p-LEDs can be placed on the solder depots, and in a subsequent step a conversion matrix can be applied in a second structured photoresist to create a conversion layer on the p-LEDs.
  • the conversion layer can also first be produced on a carrier using a structured photoresist, then the p-LEDs can be placed with their light emission surface on the conversion layer, and in a subsequent step solder depots can be applied to electrical connection surfaces using a further structured photoresist layer of the p-LEDs are generated.
  • soldering can take place cost-effectively and precisely using a method described in the application, and in particular by producing the solder depots using a structured photoresist layer.
  • the material of the conversion layer and the solder depots can also be applied with a high packing density, as a result of which less of the respective material is required in production.
  • the conversion layer allows light-converting p-LEDs to be provided as coherent individual components which, due to their production, have a high level of stability, so that they can be applied to a target substrate using simple, already known die bonders.
  • a method for producing at least one optoelectronic device comprises the steps:
  • solder ball By remelting the electrically conductive material in the at least two first openings, it melts and contracts into a geometrically shaped "solder ball".
  • the solder ball can be in the form of a sphere or any other ellipsoid and can be in a contact area with
  • the electrical connection surfaces of the at least one optoelectronic component can be pressed in or cut off.
  • the step of filling the at least two first openings with the electrically conductive material and/or the step of filling the at least one second opening with the light-converting material can be carried out in particular by means of doctor blades.
  • the first or second structured photoresist layer the electrically conductive or. applied light-converting material and the first or the second Opening are made by scraping the material from the surface of the first and second structured photoresist layer filled using a doctor blade.
  • the steps of providing the first and the second patterned photoresist layer can include, in particular, common photolithography processes, as well as nano imprint, laser and etching processes to produce the structure desired in each case.
  • the step of providing the first structured photoresist layer comprises providing the first structured photoresist layer on the first carrier or on a separating layer optionally located on the carrier.
  • the at least two first openings extend respectively from the first carrier or. the optional separating layer through the first structured photoresist layer, so that the first carrier or the optional separating layer in each case forms a bottom surface for the at least two first openings.
  • the first carrier can be a transparent carrier or a transparent film which is particularly permeable at least to laser and/or UV light.
  • the carrier can be a glass carrier or a plastic film.
  • the separating layer or also called the detachment layer can be designed to facilitate detachment of the first carrier at a later point in time in the method.
  • the release layer can also have good chemical resistance to photolithography chemicals.
  • the separating layer can be designed to withstand high-temperature processing during possible subsequent curing steps over a longer period of time.
  • the step of filling the at least two first openings takes place immediately after the step of providing the first structured photoresist layer.
  • an electrically conductive material can be applied to the first structured photoresist layer, and this can then be squeegeed into the at least one two first openings by means of a squeegee, so that these are filled with the electrically conductive material.
  • the first carrier the optional separating layer which can form a bottom surface for the at least two first openings, can in particular have a material or a surface coating, at least in the area of the openings, which is not or only barely wettable. This can ensure that when the electrically conductive material is later remelted, it does not adhere to the first carrier or the optional separating layer, but instead the electrically conductive material on the first carrier or the optional separating layer forms a single, geometrically clean form within the openings Solder ball pulls together and in particular there are no other balls next to the main ball.
  • the first carrier or the optional separating layer has “hydrophobic” properties in relation to the electrically conductive material at least in the region of the openings, ie are repellent to the electrically conductive material. As a result, this can in a later remelting without dealing with the first carrier or. to connect the optional release liner, pull together into a solder ball .
  • the electrically conductive material can be, for example, a solder paste that is introduced into the at least two first openings.
  • the electrically conductive material can, for example, comprise at least one of the following material systems: SnAgCu, SnBi, SnBiAg, and InAu.
  • the electrically conductive material can also be type 8+ solders.
  • solder depots By creating solder depots by means of a structured photoresist layer, squeegeeing the electrically conductive material into the openings, and subsequent remelting of the electrically conductive material in the openings, a high level of alignment accuracy of the solder depots can be achieved. As a result, such a method is particularly well suited for small optoelectronic devices such as p-LEDs.
  • the first structured layer comprises two or more levels or steps, so that the at least two first openings or the electrically conductive material introduced into the openings can have undercuts and thus anchoring structures.
  • the step of providing the at least one optoelectronic component takes place after the step of filling the at least two first openings with the electrically conductive material.
  • the at least one optoelectronic component is in such a way on the first structured photoresist layer or. arranged with the electrically conductive material in the at least two first openings such that the at least two electrical connection surfaces of the optoelectronic component are in contact with the electrically conductive material.
  • the at least two electrical connection surfaces of the optoelectronic component are corresponding to the first structured photoresist layer or facing the electrically conductive material in the at least two first openings.
  • the at least one optoelectronic component or are the at least two electrical connection surfaces of the optoelectronic component by means of an adhesive on the first structured photoresist layer or the electrically conductive material in the at least two first openings at least temporarily attached.
  • the adhesive can be located in particular between the electrical connection surfaces and the electrically conductive material in the at least two first openings.
  • the adhesive can either be electrically conductive and remain in the optoelectronic device between the electrical connection pads and the electrically conductive material in the at least two first openings, or it can vaporize and evaporate, for example, when the electrically conductive material is remelted or when the optoelectronic device is heated in some other way thus only temporarily located between the electrical connection surfaces and the electrically conductive material in the at least two first openings.
  • the adhesive can be a temporary adhesive such as glycerin.
  • the step of providing the second structured photoresist layer takes place after the step of providing the at least one optoelectronic component.
  • the second structured photoresist layer can be provided on the first structured photoresist layer after the at least one optoelectronic component on the first structured photoresist layer or the electrically conductive material has been placed in the at least two first openings.
  • the second structured photoresist layer can be provided in particular in such a way that the at least one optoelectronic component is arranged in the at least one second opening.
  • the second structured photoresist layer can correspondingly surround the at least one optoelectronic component in the lateral direction.
  • a light-converting material can be applied to the second structured photoresist layer, and this can then be squeegeed into the at least one second opening by means of a squeegee, so that it is filled with the light-converting material.
  • a conversion layer can be provided which is at least in contact with a light emission surface of the at least one optoelectronic component and in particular also with side surfaces of the at least one optoelectronic component.
  • the light-converting material can be, for example, a matrix material containing light-conversion particles that are designed to convert light of a first wavelength that impinges on the light-conversion particles into light of a second wavelength that differs from the first.
  • the light conversion particles can be, for example, so-called phosphors or phosphors.
  • the method also includes curing or Baking of the light-converting matrix material so that it is inherently stable on the one hand and forms a permanent connection with the at least one optoelectronic component on the other.
  • the resulting conversion layer can correspondingly have a fixed connection with the at least one optoelectronic component.
  • the method also includes providing a second carrier on the second structured photoresist layer or. the light-converting material located in the at least one second opening.
  • the step of providing the second carrier can in particular after the step of filling the at least one second opening take place with the light-converting material.
  • the second carrier can be so on the second structured photoresist layer or. applied to the light-converting material located in the at least one second opening so that it touches at least the light-converting material located in the at least one second opening.
  • a further separating layer can also be located in the light-converting material located in the at least one second opening.
  • the further separating layer or also called detachment layer can be designed to facilitate a possible detachment of the at least one optoelectronic device from the second carrier at a later point in time of the method.
  • the application or Providing the second carrier can serve in a first step to rebond the at least one optoelectronic device in order to then be able to detach it from the first carrier and expose it.
  • the method also includes removing the first carrier and/or removing the first and the second structured photoresist layer.
  • the at least one optoelectronic device with solder depots or Solder balls are exposed or are merely in contact with the second carrier or the further separating layer optionally located thereon.
  • the soldered at least one optoelectronic component can be present on the second carrier according to "Pads-Up" and can then be transferred to a target substrate by means of a LIFT process, for example.
  • the first and the second structured photoresist layer can be an orthogonal resist system.
  • the first and the second structured lacquer layer can be selected or be designed that they are dissolved with two different solvents / strippers or. can be removed .
  • the first carrier can also be designed, for example, as a temporary carrier that can be removed by means of a laser, thermal, or UV release method, or can be designed as a liner that can be pulled off.
  • the step of remelting the electrically conductive material takes place after the step of filling up the at least one second opening.
  • the remelting step can not only be used to remelt the electrically conductive material in the at least two first openings, but can also be used at the same time to harden the light-converting material in the at least one second opening.
  • the remelting step can take place after the at least one optoelectronic component has been arranged on the electrically conductive material in the at least two first openings. Accordingly, the remelting can cause not only the formation of a solder ball in the at least two first openings, but also a connection of the solder balls to the electrical connection surfaces of the at least one optoelectronic component.
  • the connection surfaces can be easily wettable, so that they are wetted with the electrically conductive material during remelting.
  • dome-shaped solder pads can thus form on the electrical connection areas of the at least one optoelectronic component.
  • the step of remelting takes place before the step of providing the at least one optoelectronic component.
  • the remelting step can take place before a further layer or component has been applied to the first openings.
  • the electrically conductive material in the first openings can contract to form a solder ball and, at least in some areas, the first openings or tower over the first structured paint layer.
  • the method also includes planarizing a remelted electrically conductive material, which has the at least two first openings or the first structured lacquer layer protrudes.
  • a remelted electrically conductive material which has the at least two first openings or the first structured lacquer layer protrudes.
  • excess electrically conductive material that protrudes beyond the first openings is removed, and the first structured photoresist layer has a common planar surface with the electrically conductive material.
  • solder balls produced by the remelting in the first openings and protruding beyond the first openings can be “cut off” as a result, so that they are then present in the first openings in the form of a dome.
  • the method also includes applying an electrically conductive intermediate layer between the electrically conductive material in the first openings and the electrical connection areas of the at least one optoelectronic component.
  • the electrically conductive intermediate layer can not only be limited to areas between the electrically conductive material in the first openings and the electrical connection areas of the at least one optoelectronic component, but can be formed on the entire first structured photoresist layer.
  • the step of providing the second structured photoresist layer comprises providing the second structured photoresist layer on the first carrier or a separating layer optionally located on the carrier. Instead of the first structured photoresist layer, the second structured photoresist layer can therefore also be provided first on the first carrier.
  • the at least one second opening extends correspondingly from the first carrier or the optional release layer through the second structured photoresist layer, so that the first carrier or the optional release liner forms a bottom surface for the at least one second opening.
  • the step of filling the at least one second opening with a light-converting material takes place immediately after the step of providing the second structured photoresist layer.
  • a light-converting material can be applied to the second structured photoresist layer, and this can then be squeegeed into the at least one second opening by means of a squeegee, so that it is filled with the light-converting material.
  • the step of providing the at least one optoelectronic component takes place after the step of filling the at least one second opening with the light-converting material.
  • the at least one optoelectronic component can be so on the second structured photoresist layer or.
  • the light-converting material are arranged in the at least one second opening that at least the top of the at least one optoelectronic component is in contact with the light-converting material.
  • the at least one optoelectronic component is arranged in particular in such a way that the upper side of the at least one optoelectronic component points in the direction of the first carrier. For example, can the at least one optoelectronic component can be easily pressed into the pre-cured or non-pre-cured light-converting material.
  • the step of providing the first structured photoresist layer takes place after the step of providing the at least one optoelectronic component.
  • the first structured photoresist layer can in particular on the second structured photoresist layer or.
  • the at least one optoelectronic component are provided in such a way that the at least two first openings are each arranged opposite one of the at least two electrical connection surfaces of the at least one optoelectronic component.
  • the step of remelting the electrically conductive material takes place after the at least one optoelectronic component has been arranged on the light-converting material in the at least one second opening and after the at least two first openings have been filled with the electrically conductive material.
  • the remelting step can not only be used to remelt the electrically conductive material in the at least two first openings, but can also be used at the same time to harden the light-converting material in the at least one second opening.
  • the remelting can cause not only the formation of a solder ball in the at least two first openings, but also a connection of the solder balls to the electrical connection surfaces of the at least one optoelectronic component.
  • the connection surfaces can be easily wettable, so that they are wetted with the electrically conductive material during remelting.
  • the method also includes a subsequent removal of the first and the second structured photoresist layer.
  • At least she can an optoelectronic device with solder depots or Solder balls are exposed or are only in contact with the first carrier or the separating layer optionally located thereon.
  • the soldered at least one optoelectronic component is present according to "Pads-Up" on the first carrier and can then be transferred to a target substrate by means of, for example, a LI FT process.
  • the optoelectronic device comprises at least one p-LED with a first and a second electrical connection pad spaced therefrom on a bottom side of the at least one p-LED, and a first solder pad on the first electrical connection area and a second solder pad on the second electrical connection area.
  • the at least one p-LED is designed to emit light through an upper side opposite the underside during intended use of the p-LED.
  • the first and second solder pads are each designed in the shape of a dome and each comprise at least one of the following material systems:
  • a p-LED is a small LED, e.g. B. with edge lengths of less than 80 ⁇ m, in particular to less than 20 ⁇ m, in particular in the range of 1 pm to 10 pm. This can result in a light emission area of a few hundred ⁇ m 2 to a few tens of ⁇ m 2 . Typical heights of such p-LEDs are z. B. in the range of 1.5 pm to 10 pm.
  • the p-LED can in particular be a flip chip, which means that the p-LED can be electrically contacted from one side of the p-LED, in particular the underside of the p-LED.
  • the p-LED correspondingly has at least two electrical connection surfaces on the underside of the p-LED, which according to at least one embodiment are arranged at a distance of less than or equal to 15 pm, in particular at a distance of up to 5 pm, from one another. Other values for the distance can be, for example, values smaller than 60 pm, smaller
  • the first and/or the second solder pad protrude beyond the first or second electrical connection surface in the lateral direction.
  • the solder ball diameter of the first and/or the second solder pad can be correspondingly larger than the pad diameter of the electrical connection areas of the at least one p-LED.
  • Improved self-centering of the at least one p-LED on possible electrical contact surfaces of a target substrate can be achieved as a result of the size of the first and/or the second solder pad and the multi-material connected thereto.
  • the first solder pad has a larger volume than the second solder pad. Due to the different volumes of the solder pads or Due to the different sizes of the solder balls, the at least one p-LED can be arranged at an angle on possible electrical contact areas of a target substrate. Due to the inclination and the associated angle relative to the target substrate, in particular a directed emission of the optoelectronic Device emitted light can be adjusted by the volumes or. Sizes of the solder pads can be varied accordingly.
  • the optoelectronic device further comprises a light conversion layer, which is arranged at least on top of the at least one p-LED.
  • the light conversion layer can also surround the at least one p-LED in the lateral direction. The light of a first wavelength emitted by the at least one p-LED can be converted into light of a second wavelength, different from the first, by means of the light conversion layer.
  • the optoelectronic device also includes a mirror layer, which is arranged at least on the underside of the at least one p-LED and in particular also on the side surfaces of the at least one p-LED connecting the top and bottom.
  • the mirror layer can be designed in particular to reflect light which is emitted laterally or in the direction of the underside from the p-LED and to direct it in the direction of the top of the p-LED. It can thereby be achieved that the optoelectronic device is essentially a surface-emitting component.
  • the upper side and/or the lower side of the at least one p-LED has a concave or convex curvature.
  • the light emitted by the at least one p-LED can be advantageously shaped and imaged, for example.
  • a mirror layer arranged on the underside of the p-LED can, for example, form a concave mirror and shape the light emitted by the at least one p-LED in the desired manner.
  • a convex curvature of a mirror layer arranged on the underside of the p-LED can lead to the light emitted by the at least one p-LED being scattered into the surroundings.
  • the optoelectronic device further comprises a carrier substrate with a first electrical contact area and a second electrical contact area spaced therefrom, the first solder pad being arranged on the first contact area and the second solder pad being arranged on the second contact area.
  • the solder pads are each mechanically and electrically connected to the electrical contact surfaces.
  • the carrier substrate can be, for example, a PCB board, ceramic, or a printed circuit board, but the carrier substrate can also be part of an integrated circuit or, for example, a display.
  • a center distance between the first and the second electrical connection area is different and in particular greater than a center distance between the first and the second electrical contact area on a carrier substrate on which the p-LED is mounted.
  • Such a relationship can lead, for example, to the p-LED bending when it is applied to the electrical contact surfaces and soldered to them. This is due to the fact that the solder of the solder pads wets the electrical contact surfaces and the electrical connection surfaces and a voltage is generated in the optoelectronic device if the center distance of the same differs.
  • a center distance between the first and the second electrical connection area that is greater than the center distance between the first and the second electrical contact area leads to a convex curvature of the p-LED.
  • the optoelectronic device further comprises an underfill material, which is arranged between the carrier substrate and the at least one p-LED.
  • the underfilling material can serve to provide additional mechanical stability of the optoelectronic device, and on the other hand it can also serve to bring about a curvature of the p-LED.
  • the underfill material can be selected in such a way that it shrinks when it cools or heats up and the p-LED is curved concavely as a result of the shrinkage of the material.
  • a convex curvature of the p-LED due to an expanding underfill material is also conceivable.
  • FIG. 1A to 8 process steps of a method for
  • Fig. 9 to 16 method steps of a further method for producing an optoelectronic device according to some aspects of the proposed principle
  • Fig. 17 to 22 method steps of a further method for producing an optoelectronic device according to some aspects of the proposed principle
  • Fig. 23 to 27 method steps of a further method for producing an optoelectronic device
  • Fig. 28A to 30B sectional views of optoelectronic devices according to some aspects of the proposed principle.
  • FIGS. 1A to 8 show method steps of a method for producing an optoelectronic device.
  • a first step as shown in FIG. 1A, a first structured photoresist layer 3 is provided on a first carrier 2 .
  • the first structured photoresist layer 3 has a multiplicity of first openings 4 which extend from the first carrier 2 through the first structured photoresist layer 3 .
  • the structured photoresist layer 3 has four first openings 4 , in each case two first openings 4 for an optoelectronic component 6 arranged over it in the further course.
  • Fig. 1B shows an optional step in which the first structured layer 3 provided on the first carrier 2 has two levels (denoted by the dashed line) such that the first openings 4 introduced therein have undercuts that are filled in a later state Anchoring structures can form.
  • Fig. 2A and 2B each show a subsequent step in which the first openings 4 are filled with an electrically conductive material 5o.
  • the first openings 4 can be filled with the electrically conductive material, for example by means of squeegees.
  • the electrically conductive material 50 is applied to the first structured photoresist layer 3 and the first openings 4 are filled by scraping the material from the surface of the first structured photoresist layer using a doctor blade.
  • optoelectronic components 6 each having two electrical connection surfaces 7 are structured on an underside 6a of the optoelectronic components 6 on the first Photoresist layer 3 or arranged on the first openings 4 with the electrically conductive material 5 0 .
  • the optoelectronic components 6 are each so on the first structured photoresist layer 3 or.
  • the electrically conductive material 5 o is arranged in the first openings 4 such that the two electrical connection surfaces 7 of the optoelectronic components 6 are each in contact with electrically conductive material 5 o in one of the first openings 4 .
  • the electrical connection surfaces 7 of the optoelectronic components 6 can be temporarily attached to the first structured photoresist layer 3 or be attached to the electrically conductive material 5 o in the first openings 4 .
  • the tacking substance can evaporate, for example, when the electrically conductive material 5 0 is later remelted or when the optoelectronic device is heated in some other way and is therefore only temporarily located between the electrical connection surfaces 7 and the electrically conductive material 5 0 .
  • the adhesive can be a temporary adhesive such as glycerin.
  • a second structured photoresist layer 8 is provided.
  • the second structured photoresist layer 8 is in particular provided on the first structured photoresist layer 3 in such a way that the optoelectronic components 6 are each arranged in a second opening 9 .
  • the second structured photoresist layer 8 correspondingly surrounds the optoelectronic components 6 in each case in the lateral direction and projects beyond the optoelectronic components 6 in each case in a direction perpendicular to an upper side 6b of the optoelectronic components 6 opposite the underside 6a.
  • the second openings 8 are filled with a light-converting material 10 in a subsequent step.
  • a light-converting material 10 can be applied to the second structured photoresist layer 8 and this can then be squeegeed into the second openings 9 using a squeegee, so that these are filled with the light-converting material 10 .
  • a conversion layer can be provided on the optoelectronic components 6, which is in contact with the top side 6b of the optoelectronic components 6 and in contact with side surfaces of the optoelectronic components 6.
  • the electrically conductive material 50 arranged in the first openings 4 is remelted.
  • the electrically conductive material 5o melts and contracts into a geometrically shaped "solder ball" or a solder pad 5 i .
  • the solder ball has the shape of an ellipsoid or a sphere and is in a contact area with the Electrical connection surfaces 7 of the optoelectronic components 6 are pressed in or cut off. This is due to the fact that the electrical connection surfaces 7 have a wettable surface compared to the first carrier 2, and the electrically conductive material 5o does not adhere to the electrical connection surfaces 7 after remelting as a result j however, on the first carrier 2.
  • the segments of an ellipsoid or spherical segments of the electrically conductive material that are produced as a result are referred to below as a dome or as dome-shaped solder pads 5i.
  • the light-converting material 10 can also be hardened at the same time by the remelting, so that on the one hand it is inherently stable and on the other hand it forms a permanent connection with the optoelectronic components 6 .
  • the resulting conversion layer can correspondingly have a fixed connection to the optoelectronic components 6 .
  • a separating layer 11 is arranged between the second carrier 12 and the second structured photoresist layer 8 .
  • the second carrier 12 or. the separating layer 11 are so on the second structured photoresist layer 8 or.
  • the separating layer 11 or also referred to as a detachment layer, can be designed to facilitate possible detachment of the optoelectronic devices from the second carrier 12 at a later point in time in the method, in particular by means of a LI FT-Off method.
  • the first carrier 2, the first structured photoresist layer and the second structured photoresist layer are removed, so that the two optoelectronic devices 1 shown as an example, each with solder pads 5 i arranged on the electrical connection areas 7, are exposed or only in contact with the second carrier 12 or. of the separating layer 11 are available.
  • the soldered optoelectronic devices 1 are correspondingly “pads up” on the second carrier 12 or the separating layer 11 and can then be transferred to a target substrate by means of a LIFT-Off method, for example.
  • FIGS. 9 to 16 show method steps of a further method for producing an optoelectronic device.
  • the step of remelting the electrically conductive material 50 takes place before the step of arranging the optoelectronic components 6 on the electrically conductive material.
  • This remelting step is shown in FIG. 11 shown.
  • the electrically conductive material in the first openings 4 forms a solder ball or solder ball. together to form a solder pad 5 i and protrudes in some areas over the first openings 4 or the first structured lacquer layer 3 .
  • This protruding electrically conductive material can be removed in a further optional step, as shown in FIG. 1, are removed, and the solder pads 5 i can be planarized accordingly, so that they are then present in the first openings 4 in the form of a dome.
  • FIG. 11 shows an electrically conductive intermediate layer 13 on the solder pads 5 i and 5 i respectively. are applied to the first structured photoresist layer 3 .
  • the electrically conductive intermediate layer 13 for example, a subsequent arrangement or. Fastening the optoelectronic components 6 are facilitated on the solder pads 5 i.
  • the optoelectronic components 6 can also be used without the optional features shown in FIGS. 1 and 11. 2 illustrated intermediate steps, are pressed onto the solder pads 5 i, so that these by pressing, as shown in FIG. 12 are again present in the first openings 4 in the shape of a dome.
  • FIGS. 13 to 16 again correspond to the steps shown in FIGS. 4, 5, 7 and 8 with the difference that the remelting of the electrically conductive material has already been carried out.
  • the method can also include a further step, not shown, in which the light-converting material is cured, curing the light-converting material also improving the mechanical and electrical connection between the solder pads 5 i and the electrical connection surfaces 7 of the optoelectronic components 6 can .
  • FIGS. 17 to 22 show method steps of a further method for producing an optoelectronic device. In contrast to the method steps described in FIGS. 1 to 16, in a first step, as shown in FIG.
  • Second openings 9 extend respectively from the first carrier 2 and . of the separating layer 11 through the second structured photoresist layer 8, so that the first carrier 2 or the separating layer 11 in each case forms a bottom surface for the second openings 9 .
  • the second openings 9 are filled with a light-converting material 10 in a further step.
  • the light-converting material 10 can be applied to the second structured photoresist layer 8, and this can then be squeegeed into the second openings by means of a squeegee, so that these are filled with the light-converting material.
  • optoelectronic components 6 on the second structured photoresist layer 8 or. the light-converting material 10 in the second openings in such a way that the upper side 6b of the optoelectronic components 6 is in contact with the light-converting material 10 .
  • the optoelectronic components are arranged in particular in such a way that the tops 6b of the optoelectronic components 6 each point in the direction of the first carrier 2, that the optoelectronic components 6 are each arranged centrally opposite a second opening 9, and the electrical connection surfaces 7 each an underside 6a of the optoelectronic components 6 point away from the first carrier 2 .
  • the optoelectronic components 6 can also be easily pressed into the light-converting material 10 .
  • the first structured photoresist layer 4 is provided on the second structured photoresist layer 8 or. on the optoelectronic components is then, as shown in FIG. 20 .
  • the first structured photoresist layer is in particular in this way on the second structured photoresist layer 8 or provided on the optoelectronic components that the first openings 4 are each arranged opposite one of the electrical connection surfaces 7 of the optoelectronic components 6 .
  • the first openings 4 can be essentially the same size or have the same diameter as the electrical connection surfaces 7, but can also, depending on the desired amount of electrically conductive material that is to be arranged on the connection surfaces 7, in size or vary in diameter.
  • the first openings 4 are then, as shown in FIG. 21 is filled with the electrically conductive material 5 o .
  • the first openings 4 can be filled with the electrically conductive material, for example by means of doctor blades.
  • the electrically conductive material 50 is applied to the first structured photoresist layer 3 and the first openings 4 are filled by scraping the material from the surface of the first structured photoresist layer using a doctor blade.
  • the electrically conductive material 50 is then remelted, and the first and the second structured photoresist layer 3, 8 are removed.
  • the remelting step can not only serve to remelt the electrically conductive material 50 in the first openings 4, but can also simultaneously serve to melt the light-converting material 10 in to harden the second openings 9 .
  • the remelting can cause not only the formation of the solder pads 5 i in the first openings, but also a connection of the solder pads 5 i to the electrical connection surfaces 7 of the optoelectronic components 6 .
  • the connection surfaces 7 can be readily wettable, so that they are wetted with the electrically conductive material 5 o during remelting and the electrically conductive material 5 o forms in the form of a flake on the connection surfaces 7 .
  • the soldered optoelectronic devices 1 are correspondingly “pads up” on the first carrier 2 and can then be transferred to a target substrate by means of a LIFT-Off method, for example.
  • the fig . 23 to 27 show method steps of a further method for producing an optoelectronic device.
  • the steps shown in FIGS. 23 and 24 essentially correspond to the steps shown in FIGS. 17 and 18.
  • the second structured photoresist layer is already removed before the optoelectronic components 6 have been arranged on the light-converting material 10.
  • optoelectronic components 6 arranged such that the top 6b of the optoelectronic components 6 are each in contact with the light-converting material 10 .
  • the optoelectronic components 6 are arranged in particular in such a way that the tops 6b of the optoelectronic components 6 each point in the direction of the first carrier 2, and the electrical connection surfaces 7 on a bottom 6a of the optoelectronic components 6 each point away from the first carrier 2.
  • the optoelectronic components 6 can also be easily pressed into the light-converting material 10 .
  • FIGS. 28A to 30B each show sectional views of optoelectronic devices according to some aspects of the proposed principle.
  • Fig. 28A shows an optoelectronic device 1 comprising a p-LED 6 with a first 7a and a second 7b electrical connection pads spaced therefrom on an underside 6a of the p-LED 6.
  • FIG. The two connection surfaces 7a, 7b have a center distance ai from one another.
  • the optoelectronic device 1 also includes a first solder pad 5a on the first electrical connection area 7a and a second solder pad 5b on the second electrical connection area 7b.
  • the first and second solder pads 5a, 5b are each designed in the shape of a dome and essentially completely cover the respective electrical connection area 7a, 7b.
  • the optoelectronic device also includes a light conversion layer 10, which is arranged on the upper side 6a of the p-LED 6 and surrounds the p-LED 6 in the lateral direction.
  • the light conversion layer 10 can convert light of a first wavelength emitted by the p-LED into light of a second wavelength, which is different from the first wavelength.
  • the p-LED 6 or . is designed to, during an intended use of the p-LED 6, light L by one of To emit bottom 6a opposite top 6b.
  • the optoelectronic device 1 also has a mirror layer 13 which is arranged on the underside 6a and on side surfaces of the p-LED 6 .
  • the mirror layer 13 is designed in particular to reflect light L which is emitted laterally or in the direction of the underside 6a from the p-LED and to direct it in the direction of the upper side 6b of the p-LED 6 .
  • the p-LED 6 or the optoelectronic device 1 is essentially a surface-emitting component.
  • a p-LED 6 is a small LED, e.g. B. with an edge length b of less than 80 ⁇ m, in particular less than 20 ⁇ m, in particular in the range from 1 ⁇ m to 10 ⁇ m. This can result in a light emission area of a few hundred ⁇ m 2 to a few tens of ⁇ m 2 .
  • Typical heights h of such p-LEDs are z. B. in the range of 1.5 pm to 10 pm.
  • Fig. 28B shows a further embodiment of an optoelectronic device 1 .
  • the first and the second solder pad 5a, 5b protrude beyond the first or second electrical connection surface 7a, 7b in the lateral direction.
  • the solder ball diameter of the first and second solder pads 5a , 5b is correspondingly larger than the pad diameter of the electrical connection areas 7a , 7b of the p-LED 6 .
  • Improved self-centering of the p-LED on possible electrical contact areas of a target substrate can be achieved by the size of the first and second solder pads 5a, 5b and the multimaterial connected thereto.
  • the first solder pad 5a has a larger volume than the second solder pad 5b. Due to the different volumes of the solder pads or due to the different sizes of the solder balls, the p-LED 6 can have one on possible electrical contact surfaces 14a, 14b Target substrate are arranged at an angle. Such a scenario is shown in FIG. 29A shown. Due to the inclination and the associated angle a relative to the target substrate or. Carrier substrate 15 can be adjusted in particular a directional emission of the light emitted by the optoelectronic device 1 light L by the volumes or. Sizes of the solder pads 5a, 5b are varied accordingly.
  • Fig. 29B shows a further embodiment of an optoelectronic device 1 .
  • the optoelectronic device includes target substrate or. Carrier substrate 15 with a first and a second electrical contact area 14a, 14b spaced therefrom, the first solder pad 5a being arranged on the first contact area 14a and the second soldering pad 5b being arranged on the second contact area 14b.
  • the solder pads 5a, 5b are each mechanically and electrically connected to the electrical contact surfaces 14a, 14b.
  • the upper and the lower side 6a, 6b of the p-LED resp. the conversion layer 10 also has a concave curvature in the case shown.
  • the light L emitted by the p-LED 6 can be advantageously shaped, for example.
  • a mirror layer 13 arranged on the underside 6a of the p-LED can thereby form a concave mirror, for example, and shape the light L emitted by the p-LED 6 in the desired manner.
  • the concave curvature can also be produced in that an underfill material 16 is arranged between the carrier substrate 15 and the p-LED 6, which underfill material shrinks when it cools or heats up and the p-LED 6 or the conversion layer 10 is concavely curved by the shrinkage of the material.
  • the underfilling material can additionally serve to provide additional mechanical stability of the optoelectronic device 1 .
  • FIGS. 30A and 30B show further embodiments of an optoelectronic device 1 without a conversion layer.
  • Fig. 30A shows an as in FIG. 29A illustrated optoelectronic device 1 without the conversion layer 10 but with an underfill material 16, which is arranged between the carrier substrate 15 and the p-LED 6 and serves to provide additional mechanical stability of the optoelectronic device 1.
  • Fig. 30B shows an optoelectronic device 1 in which the p-LED 6 or the top and bottom 6a, 6b of the p-LED have a convex curvature.
  • the convex curvature can be produced in that the center distance ai between the first and the second electrical connection area 7a, 7b has been selected to be greater than the center distance a2 between the first and the second electrical contact area 14a, 14b.
  • a convex curvature of a mirror layer arranged on the underside 6a of the p-LED can lead, for example, to a light L emitted by the p-LED 6 being scattered into the surroundings.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un procédé de fabrication d'au moins un dispositif optoélectronique, comprenant les étapes consistant à : fournir un premier substrat ; fournir une première couche de résine photosensible structurée ayant au moins deux premières ouvertures ; fournir une seconde couche de résine photosensible structurée ayant au moins une seconde ouverture ; fournir au moins un composant optoélectronique ayant au moins deux faces de connexion électrique sur une face inférieure de l'au moins un composant optoélectronique ; remplir des au moins deux premières ouvertures avec un matériau électriquement conducteur ; remplir l'au moins une seconde ouverture avec un matériau de conversion de lumière ; et la refusion du matériau électriquement conducteur de telle sorte qu'il est en particulier en forme de dôme. Les au moins deux premières ouvertures et l'au moins une seconde ouverture sont opposées l'une à l'autre, et les au moins deux premières ouvertures sont chacune opposées à l'une des au moins deux faces de connexion électrique de l'au moins un composant optoélectronique.
PCT/EP2023/052081 2022-01-28 2023-01-27 Dispositif optoélectronique et procédé de production de dispositif optoélectronique WO2023144346A1 (fr)

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DE102022102090.8 2022-01-28
DE102022102090.8A DE102022102090A1 (de) 2022-01-28 2022-01-28 Optoelektronische vorrichtung und verfahren zur herstellung einer optoelektronischen vorrichtung

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1069616A2 (fr) * 1999-07-12 2001-01-17 Sony Chemicals Corporation Panneau à circuit imprimé à multi-couches flexible
US6208525B1 (en) * 1997-03-27 2001-03-27 Hitachi, Ltd. Process for mounting electronic device and semiconductor device
WO2003058810A1 (fr) * 2001-12-28 2003-07-17 Epcos Ag Composant encapsule de hauteur reduite et procede de fabrication
DE102011112476A1 (de) * 2011-09-05 2013-03-07 Epcos Ag Bauelement und Verfahren zum Herstellen eines Bauelements
WO2017001327A1 (fr) * 2015-06-29 2017-01-05 Osram Opto Semiconductors Gmbh Dispositif d'éclairage optoélectronique

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014108368A1 (de) 2014-06-13 2015-12-17 Osram Opto Semiconductors Gmbh Oberflächenmontierbares Halbleiterbauelement und Verfahren zu dessen Herstellung
DE102018111637A1 (de) 2018-01-26 2019-08-01 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip, verfahren zur herstellung eines optoelektronischen bauelements und optoelektronisches bauelement
DE102019218501A1 (de) 2019-11-28 2021-06-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauteil für ein display und verfahren zur herstellung eines bauteils

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6208525B1 (en) * 1997-03-27 2001-03-27 Hitachi, Ltd. Process for mounting electronic device and semiconductor device
EP1069616A2 (fr) * 1999-07-12 2001-01-17 Sony Chemicals Corporation Panneau à circuit imprimé à multi-couches flexible
WO2003058810A1 (fr) * 2001-12-28 2003-07-17 Epcos Ag Composant encapsule de hauteur reduite et procede de fabrication
DE102011112476A1 (de) * 2011-09-05 2013-03-07 Epcos Ag Bauelement und Verfahren zum Herstellen eines Bauelements
WO2017001327A1 (fr) * 2015-06-29 2017-01-05 Osram Opto Semiconductors Gmbh Dispositif d'éclairage optoélectronique

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