WO2023103260A1 - 光伏电池组件及其制造方法 - Google Patents

光伏电池组件及其制造方法 Download PDF

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Publication number
WO2023103260A1
WO2023103260A1 PCT/CN2022/089209 CN2022089209W WO2023103260A1 WO 2023103260 A1 WO2023103260 A1 WO 2023103260A1 CN 2022089209 W CN2022089209 W CN 2022089209W WO 2023103260 A1 WO2023103260 A1 WO 2023103260A1
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layer
photovoltaic cell
grid
busbars
bonding layer
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PCT/CN2022/089209
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English (en)
French (fr)
Inventor
黄品如
黄耀纶
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中能创光电科技(常州)有限公司
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Priority to US17/882,394 priority Critical patent/US20230178680A1/en
Publication of WO2023103260A1 publication Critical patent/WO2023103260A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the invention relates to the field of photovoltaic technology, in particular to a photovoltaic battery module and a manufacturing method thereof.
  • next-generation batteries Due to the limited application area of rooftop photovoltaic and BIPV, more efficient cells and modules are required.
  • the most promising new batteries should be TOPCON and heterojunction batteries.
  • shingled modules have the highest module efficiency.
  • the 9BB busbar photovoltaic cell commonly used in the industry consumes less Ag paste than the 5BB busbar photovoltaic cell. This is because the number of battery busbars in the 9BB busbar photovoltaic cell is larger, and the current transmission distance between the two battery busbars is larger. The amplitude is reduced, so that the amount of Ag paste for battery fine grids can be reduced. If you still adopt this technical route and continue to increase the main grid, the amount of Ag paste for the battery fine grid can be reduced, but the Ag paste for the main grid of the battery is increasing. In the electrical connection scheme of photovoltaic cells with main grid, the battery main grid passes through the welding strip Welding, at the same time play the role of mechanical fixation and current conduction. Therefore, the total Ag slurry consumption cannot be further reduced.
  • the busbar-free photovoltaic cell technology does not have a battery busbar, which can save the amount of Ag paste for the battery busbar.
  • busbarless photovoltaic cells have two electrical connection schemes. The first one is to set Ag paste pads on the surface of busbarless photovoltaic cells for welding multi-busbar ribbons and busbarless photovoltaic cells.
  • the number of pads should not be too small, so as to ensure reliable mechanical fixation between the solder ribbon and the photovoltaic cell.
  • the second is to conduct the electrical connection of busbar-free photovoltaic cells through adhesive film electrodes with multi-busbar ribbons. There is no need to set Ag paste pads on the surface of busbar-free photovoltaic cells, which further reduces the total Ag paste consumption of photovoltaic modules.
  • the Chinese patent document CN108419433 of Meyer Burger, Switzerland discloses the second electrical connection scheme for photovoltaic cells without busbars.
  • the electrical connection between multi-busbar ribbons and photovoltaic cells without busbars is carried out through adhesive film electrodes, with multi-busbars
  • the adhesive film electrode of the ribbon includes a layer of adhesive film, and the multi-busbar ribbon is adhered and embedded on the adhesive film, and then the multi-busbar ribbon is fixed on the surface of the battery with the adhesive film to form a multi-busbar ribbon and no main A good conductive contact to the grid photovoltaic cell, as shown in Figure 12.
  • the defect of the second type of electrical connection scheme for photovoltaic cells without busbars is that the preparation of this adhesive film electrode with multi-busbar soldering strips not only needs to combine the multi-busbar soldering strips and the adhesive film, but also requires continuous interlacing. Adjusting the adhesive surface of the overturned adhesive film leads to the high price of the adhesive film electrode with multi-busbar ribbons; at the same time, the manufacturing cost of the photovoltaic module using the adhesive film electrode with multi-busbar ribbons is also high, and the actual The effect of reducing component costs is limited.
  • the technical problem to be solved by the present invention is to reduce silver consumption while ensuring reliable mechanical fixation between interconnection busbars and photovoltaic cells.
  • a photovoltaic cell assembly including a photovoltaic cell layer, the photovoltaic cells in the photovoltaic cell layer lead out current through the interconnection busbar, and there is a conductive connection between the photovoltaic cell and the interconnection busbar Or non-conductive connection point, used for preliminary fixation of interconnected busbars and photovoltaic cells.
  • the surface of photovoltaic cells has a grid wire bonding layer and a grid wire support layer, which is used to completely fix the interconnected busbars on the surface of photovoltaic cells. Grid lines
  • the support layer is pasted on the surface of the photovoltaic cell through the bonding effect of the grid wire adhesive layer, and the grid wire support layer is laminated on the interconnected busbars.
  • the function of mechanically fixing the interconnected busbars is provided by the gridline support layer, which tightly presses the interconnected busbars on the surface of the photovoltaic cell, limiting the Move to realize the complete fixation of the interconnected busbars and help the components to resist changes in the external environment temperature.
  • connection point between the interconnected busbars and the photovoltaic cells is only a preliminary fixation, which is convenient for connecting the photovoltaic cells into a photovoltaic cell string for use Subsequent preparation steps, so compared with the existing busbar-free photovoltaic cell electrical connection scheme that mechanically fixes the interconnected busbar lines through many Ag paste pads, the number of connection points required by the scheme of the present invention is small, and can achieve low Junction point Ag loss or no junction point Ag loss. Compared with the second busbar-free photovoltaic cell electrical connection scheme of Meyer Burger, Switzerland, the scheme of the present invention has lower manufacturing cost, and can be implemented by relying on traditional existing equipment or simple modification.
  • the interconnected busbars are mechanically fixed through the gridline support layer, and the stress caused by thermal expansion is evenly distributed to the entire interconnected busbars of about 100 mm on the surface of the photovoltaic cell, so that the interconnected busbars can be
  • the stress at the end is reduced by a factor of about 100. Therefore, by adopting the method of the present invention, the probability of silicon chip damage can be greatly reduced.
  • the silicon wafer is damaged due to other reasons, such as the collision problem in the battery manufacturing process, it will be bonded together by the grid wire bonding layer and the grid wire support layer, without affecting power generation. Therefore, the use of the present invention is beneficial to the thinning of silicon wafers.
  • the invention is generally applicable to various high-efficiency batteries, such as common heterojunction batteries, passivation contact TOPCON batteries, IBC back junction batteries, perovskite batteries, and other laminated batteries of thin films and crystalline silicon.
  • the invention is especially beneficial to be implemented on heterojunction cells, and narrows the material cost gap between heterojunction cells and conventional PERC cells.
  • the grid wire adhesive layer is located between the grid wire support layer and the photovoltaic cell, and is used to attach the grid wire support layer to the surface of the photovoltaic cell. Attached to the surface of the photovoltaic cell, the thickness of the grid wire adhesive layer is smaller than the thickness of the interconnected main grid wires.
  • interconnection busbars are embedded in the grid line bonding layer, or there is a gap between the interconnection busbars and the grid line bonding layer.
  • the gridline bonding layer and the gridline supporting layer can jointly mechanically fix the interconnection busbars, and the fixing effect is relatively better.
  • the photovoltaic cell assembly also includes an encapsulation structure, the photovoltaic cell layer is encapsulated in the encapsulation structure, the grid bonding layer and the grid support layer cover the interconnection busbars on the surface of the photovoltaic cells, and the surface of the interconnection busbars has a low The melting point welding layer, the interconnected main grid lines form electrical contact with the surface of the photovoltaic cell through the low melting point welding layer, the interconnecting main grid lines are embedded in the grid line bonding layer, and the grid line support layer has packaging bonding between the grid line support layer and the packaging structure on the same side layer, which is used to bond the grid support layer and the package structure on the same side together.
  • both the grid line support layer and the grid line bonding layer are a whole film; or, the grid line support layer is a whole film, and the grid line bonding layer is a film strip; or, the grid line support layer is a film strip, and the grid line bonding layer is a whole film; or, both the grid line bonding layer and the grid line supporting layer are film strips.
  • the grid line bonding layer and the grid line support layer are in the form of composite film strips containing the grid line bonding layer and the grid line support layer, and at least one photovoltaic cell is used as the minimum covering unit, and the composite film strip extends along the first direction and arranged at intervals along the second direction; or, the composite film strips extend along the second direction and are arranged at intervals along the first direction, the first direction is the extending direction of the interconnected main grid lines, and the second direction is the The direction in which the extension direction is perpendicular.
  • the grid line support layer and the grid line bonding layer are polymer materials
  • the grid line support layer is PET, EVA, POE, PVB, PVF, PMMA or PC
  • the grid line bonding layer is silica gel
  • the photovoltaic cells are busbar-free photovoltaic cells
  • the interconnecting busbar lines are multi-busbar ribbons.
  • the grid wire support layer is located between the grid wire adhesive layer and the photovoltaic cell, and the grid wire support layer is only placed between the grid wire adhesive layer and the photovoltaic cell.
  • a local area shields the grid wire bonding layer, and the shielding area and the non-shielding area of the grid wire bonding layer that are blocked by the grid wire supporting layer are bonded to the grid wire supporting layer and the photovoltaic cell respectively, so as to bond the grid wire supporting layer on the surface of photovoltaic cells.
  • both the grid line support layer and the grid line bonding layer are a whole film, and the grid line support layer has hollows; or, the grid line support layer is a film strip, and the grid line bonding layer is a whole film membrane.
  • interconnection busbars In order to ensure a good electrical connection between interconnection busbars and photovoltaic cells, it is further defined that the surface of interconnection busbars has a soldering layer or conductive adhesive, and the soldering layer is a low-melting point soldering layer whose melting temperature is lower than the lamination temperature of the component.
  • the grid wires are in electrical contact with the photovoltaic cells through a solder layer or conductive glue.
  • the present invention does not rule out that the interconnection busbars are electrically connected with the photovoltaic cells through direct contact, so as to derive the current of the photovoltaic cells.
  • a method for manufacturing the above-mentioned photovoltaic cell assembly comprising the following steps: first, the interconnected busbars are initially fixed on the surface of the photovoltaic cell through conductive or non-conductive connection points; , applying pressure on the grid wire support layer and the grid wire adhesive layer, and completely fixing the interconnected busbars on the surface of the photovoltaic cell through the grid wire support layer.
  • interconnect busbars are initially fixed on the surface of the photovoltaic cell through conductive or non-conductive connection points.
  • the lamination pressure exerted on the grid wire support layer and the grid wire adhesive layer completely fixes the interconnection busbars on the surface of the photovoltaic cell through the grid wire support layer, and in the component lamination step, the The interconnecting busbars are in electrical contact with the photovoltaic cells.
  • the grid-wire bonding layer and the grid-wire supporting layer are respectively covered sequentially in the form of a film; Or, the grid line bonding layer and the grid line supporting layer are covered in the form of a composite film strip containing the grid line bonding layer and the grid line supporting layer; or, the grid line supporting layer is in the form of a film, the grid line Adhesive layers are sequentially covered in liquid form.
  • connection points between the interconnection busbars and the photovoltaic cells are formed by welding or bonding.
  • a method for manufacturing a photovoltaic cell assembly Firstly, the photovoltaic cell strings are prepared, and the interconnection busbars of the photovoltaic cell strings are preliminarily fixed on the surface of the photovoltaic cells through conductive or non-conductive connection points.
  • the interconnection busbars on the surface of the photovoltaic cells The grid line is covered with a grid line bonding layer and a grid line supporting layer, and the grid line bonding layer is located between the grid line supporting layer and the photovoltaic cell, and finally the photovoltaic cell is encapsulated in the packaging structure of the photovoltaic module through a component lamination process, And the interconnected main grid lines are completely fixed on the surface of the photovoltaic cell through the grid line adhesive layer and the grid line support layer.
  • the grid wire support layer is bonded to the surface of the photovoltaic cell through the grid wire adhesive layer.
  • the thickness of the grid wire adhesive layer is smaller than the thickness of the interconnected busbars.
  • the grid wire adhesive layer is heated and flowed, and the interconnected busbars Embedded with a grid wire adhesive layer, the grid wire support is laminated on the interconnection busbars, and the surface of the interconnection busbars has a low melting point solder layer, which melts at the lamination temperature and forms electrical contact with the surface of the photovoltaic cell.
  • the grid-wire bonding layer and the grid-wire supporting layer are respectively covered sequentially in the form of a film; Or, the grid line bonding layer and the grid line supporting layer are covered in the form of a composite film strip containing the grid line bonding layer and the grid line supporting layer; or, the grid line supporting layer is in the form of a film, the grid line Adhesive layers are sequentially covered in liquid form.
  • the grid wire bonding layer and the grid wire supporting layer are covered with at least one photovoltaic cell as the minimum covering unit.
  • the grid line bonding layer and the grid line supporting layer are covered in the form of a composite film strip containing the grid line bonding layer and the grid line supporting layer, and the composite film strip extends along the first direction or the second direction, and the first direction is the extending direction of the interconnected main gate lines, and the second direction is a direction perpendicular to the extending direction of the interconnected main gate lines.
  • the manufacturing method of the photovoltaic cell module includes, from first to last, the preparation step of the photovoltaic cell string, the module layout step and the module lamination step.
  • the grid wire bonding layer and the grid wire supporting layer take the photovoltaic cell layer as the smallest covering unit, and cover the surface of the photovoltaic cell layer in the form of a film in turn; or, the grid wire bonding layer and the grid wire supporting layer Take the photovoltaic cell layer as the minimum covering unit, and cover the surface of the photovoltaic cell layer in the form of a composite film containing a grid wire bonding layer and a grid wire support layer;
  • the layer is the smallest covering unit, and the grid line support layer is in the form of film, and the grid line bonding layer is in liquid form and covers the surface of the photovoltaic cell layer successively.
  • the manufacturing method of the photovoltaic cell module includes, from first to last, the preparation step of the photovoltaic cell string, the module layout step and the module lamination step, the grid wire bonding layer and the grid wire support layer are covered with the photovoltaic cell string as the minimum
  • the unit is pasted on the surface of the photovoltaic cell string in the form of a composite film strip containing a grid line bonding layer and a grid line support layer, and the composite film strip extends along the first direction and is spaced along the second direction on the surface of the photovoltaic cell string Arrangement
  • the first direction is the extension direction of the interconnection busbars
  • the second direction is the direction perpendicular to the extension direction of the interconnection busbars
  • the photovoltaic cell strings pasted with composite film strips enter the component layout step for layout.
  • the manufacturing method of the photovoltaic cell module includes, from first to last, the preparation step of the photovoltaic cell string, the layout step of the photovoltaic cell string, the layout step of the module, and the lamination step of the module.
  • the layout step of the photovoltaic cell string the photovoltaic cell string
  • the entire layout is arranged as a photovoltaic cell layer, and the grid line bonding layer and the grid line support layer take the photovoltaic cell layer as the smallest covering unit, and are composed of composite film strips containing the grid line bonding layer and the grid line support layer.
  • the form is pasted on the surface of the photovoltaic cell layer, and the composite film strips extend along the second direction on the surface of the photovoltaic cell layer and are arranged at intervals along the first direction.
  • the photovoltaic cell layer pasted with composite film strips enters the component layout step for component layout.
  • connection points between the interconnection busbars and the photovoltaic cells are formed by welding or bonding.
  • Welding methods such as electromagnetic welding, alloy heat welding, ultrasonic welding, friction welding, resistance welding, laser welding, etc.
  • Bonding methods such as hot melt adhesive bonding, silica gel bonding, acrylic adhesive bonding, epoxy adhesive bonding, etc.
  • the grid line bonding layer and the grid line supporting layer are covered in the form of a composite film containing the grid line bonding layer and the grid line supporting layer, and the composite film is a three-layer composite structure, including an encapsulating bonding layer, a grid line supporting layer
  • the encapsulation adhesive layer is used to bond the grid line support layer and the encapsulation structure on the same side together, and the encapsulation adhesive layer and the grid line adhesive layer are located on the front and back sides of the grid line support layer.
  • a photovoltaic cell assembly including a photovoltaic cell layer encapsulated in an encapsulation structure, the photovoltaic cells in the photovoltaic cell layer derive current through interconnection busbars, and there are conductive or non-conductive connection points between the photovoltaic cells and the interconnection busbars, used For the initial fixation of the interconnected busbars and photovoltaic cells, the interconnected busbars on the surface of the photovoltaic cells are covered with a grid bonding layer and a grid support layer, which are used to completely fix the interconnected busbars on the surface of the photovoltaic cells.
  • the surface of the wire has a low-melting point welding layer, and the interconnected busbars form electrical contact with the surface of the photovoltaic cell through the low-melting point welding layer, the grid support layer is bonded to the surface of the photovoltaic cell through the grid bonding layer, and the interconnected busbar is embedded in the grid.
  • Wire bonding layer, the grid wire supporting layer is laminated on the interconnected busbar, and there is a packaging adhesive layer between the grid wire supporting layer and the packaging structure on the same side, which is used to bond the grid wire supporting layer and the packaging structure on the same side together.
  • the grid wire adhesive layer and the grid wire support layer are in the form of a film, and at least one photovoltaic cell is used as a minimum covering unit.
  • the grid-wire bonding layer and the grid-wire supporting layer are in the form of composite film strips containing the grid-wire bonding layer and the grid-wire supporting layer, and at least one photovoltaic cell is used as a minimum covering unit.
  • the composite film strips extend along the first direction and are arranged at intervals along the second direction, or the composite film strips extend along the second direction and are arranged at intervals along the first direction, and the first direction is the extension of the interconnected busbars direction, and the second direction is a direction perpendicular to the extending direction of the interconnection busbar lines.
  • the composite film strip takes the photovoltaic cell layer as the smallest covering unit, and the photovoltaic cell layer is formed by electrically connecting at least one photovoltaic cell string, and the photovoltaic cells in the photovoltaic cell string are electrically connected through interconnecting main grid lines.
  • the photovoltaic cell layer extends along the first direction and is arranged at intervals along the second direction.
  • the composite film strips extend along the first direction on the surface of the photovoltaic cell layer and are arranged at intervals along the second direction.
  • the extension direction, the second direction is the direction perpendicular to the extension direction of the interconnected busbar lines
  • the width of the composite film strip is greater than the width of the interconnected busbar lines
  • each interconnected busbar line on the surface of the photovoltaic cell is integrated by a composite film strip Roots are fully fixed.
  • the composite film strip takes the photovoltaic cell layer as the smallest covering unit, and the photovoltaic cell layer is formed by electrically connecting at least one photovoltaic cell string, and the photovoltaic cells in the photovoltaic cell string are electrically connected through interconnecting main grid lines.
  • the photovoltaic cell layer extends along the first direction and is arranged at intervals along the second direction.
  • the composite film strips extend along the second direction on the surface of the photovoltaic cell layer and are arranged at intervals along the first direction.
  • the extension direction, the second direction is the direction perpendicular to the extension direction of the interconnected busbars, each interconnected busbar on the surface of the photovoltaic cell is fixed at multiple points by a plurality of intersecting composite film strips, and the fixed point is the interconnected busbar The point where the line intersects the strip of composite membrane.
  • the beneficial effects of the present invention are: compared with the electrical connection scheme of the non-busbar photovoltaic cell that mechanically fixes the interconnected busbars through pads, the present invention can greatly reduce the Ag consumption at the connection point of the interconnected busbars;
  • the main grid photovoltaic cell electrical connection scheme, the invention is easy to manufacture and lower in cost.
  • Fig. 1 is the manufacturing flow diagram of the photovoltaic cell assembly of embodiment 1 of the present invention.
  • Fig. 2 is the structural representation of the photovoltaic cell module of embodiment 1 of the present invention.
  • Fig. 3 is the structural representation of the composite membrane of embodiment 1 of the present invention.
  • Fig. 4 is a schematic structural diagram of the preliminary connection between interconnected busbar lines and busbar-free photovoltaic cells through connection points in Embodiment 1 of the present invention
  • Fig. 5 is another structural schematic diagram of preliminary connection between interconnected busbar lines and busbar-free photovoltaic cells through connection points in Embodiment 1 of the present invention
  • Fig. 6 is a structural schematic diagram of fixing interconnection busbars to photovoltaic cells through battery busbar pads in the prior art
  • Fig. 7 is a schematic structural view of a photovoltaic cell assembly according to Embodiment 2 of the present invention.
  • Fig. 8 is the structural representation of the composite membrane of embodiment 2 of the present invention.
  • Fig. 9 is a schematic structural view of a photovoltaic cell assembly according to Embodiment 4 of the present invention.
  • Fig. 10 is a schematic diagram of a three-dimensional structure in which interconnected busbars are fixed by composite film strips according to Embodiment 5 of the present invention.
  • Fig. 11 is a schematic diagram of the side state structure of the interconnected busbars fixed by composite film strips according to Embodiment 5 of the present invention.
  • Fig. 12 is a schematic structural diagram of photovoltaic cells connected in series through adhesive film electrodes with multi-busbar welding strips in the prior art
  • Fig. 13 is a schematic diagram of the three-dimensional structure of the interconnected busbars fixed by composite film strips according to Embodiment 6 of the present invention.
  • Fig. 14 is a schematic diagram of the side state structure of the interconnected busbars fixed by composite film strips according to Embodiment 6 of the present invention.
  • Fig. 15 is a schematic diagram of a three-dimensional structure of interconnected busbars fixed by a composite film according to Embodiment 7 of the present invention.
  • Fig. 16 is a schematic diagram of the side state structure of the interconnected busbars fixed by the composite film according to Embodiment 7 of the present invention.
  • Fig. 17 is a schematic diagram of the first non-laminated stacked structure of the fixed interconnection busbars according to Embodiment 13 of the present invention.
  • FIG. 18 is a schematic diagram of a second non-laminated stacked structure of fixed interconnection busbars according to Embodiment 13 of the present invention.
  • FIG. 19 is a schematic diagram of a third non-laminated stacked structure of fixed interconnection busbars according to Embodiment 13 of the present invention.
  • Fig. 20 is a schematic diagram of an unlaminated stacked structure of fixed interconnection busbars according to Embodiment 14 of the present invention.
  • Photovoltaic cell 2. Interconnect busbar, 3. Composite film, 3'. Composite film strip, 3-1. Grid line bonding layer, 3-2. Grid line support layer, 3-3. Package bonding layer, 4. Connection point, 5. Package panel, 6. Package backplane, 7. Adhesive film electrode with multi-bus bar.
  • Embodiment 1 a method for manufacturing a photovoltaic cell module, firstly, the photovoltaic cell strings in the photovoltaic cell layer of the module are prepared, so that the interconnected busbars 2 of the photovoltaic cell strings are initially fixed on the surface of the photovoltaic cell 1 through the connection point 4 , and then, cover the grid line bonding layer 3-1 and the grid line supporting layer 3-2 on the interconnected main grid line 2 on the surface of the photovoltaic cell 1 of the module, and the grid line bonding layer 3-1 is located on the grid line supporting layer 3- 2 and the photovoltaic cell layer, and finally through the component lamination process, the photovoltaic cell 1 is encapsulated in the packaging structure of the photovoltaic module, and the interconnection main grid line 2 is passed through the grid line adhesive layer 3-1 and the grid line support layer 3 -2 is completely fixed on the surface of photovoltaic cell 1.
  • the thickness of the grid line adhesive layer 3-1 is smaller than the thickness of the interconnection busbars 2, and the grid line adhesive layer 3-1 is heated and flowed through the component lamination process, and the interconnection busbars 2 are embedded in the grid line adhesive layer 3-1, the grid line support layer 3-2 is bonded to the surface of the photovoltaic cell 1 through the grid line bonding layer 3-1, and the grid line support layer 3-2 is pressed on the interconnection busbars 2 to realize the interconnection busbars 2 is completely fixed on the surface of the photovoltaic cell through the grid wire adhesive layer 3-1 and the grid wire support layer 3-2.
  • the surface of the interconnection busbar 2 has a low-melting solder layer, which melts at the lamination temperature and forms electrical contact with the surface of the photovoltaic cell 1 .
  • the grid-wire bonding layer 3-1 and the grid-wire supporting layer 3-2 are covered in the form of a composite film 3 containing the grid-wire bonding layer 3-1 and the grid-wire supporting layer 3-2.
  • the composite film 3 is a three-layer composite structure, including an encapsulation adhesive layer 3-3, a grid line support layer 3-2 and a grid line adhesive layer 3-1, and the encapsulation adhesive layer 3-3 is used for
  • the grid line supporting layer 3-2 is bonded to the encapsulation structure on the same side, and the encapsulation adhesive layer 3-3 and the grid line adhesive layer 3-1 are located on the front and back sides of the grid line support layer 3-2.
  • the encapsulation adhesive layer 3-3, the grid line support layer 3-2 and the grid line adhesive layer 3-1 are composed of three layers of different materials, or the same material can be processed differently to produce different polymerization and and/or the degree of crosslinking to obtain a three-layer composite structure.
  • the photovoltaic cell assembly produced by the manufacturing method of the photovoltaic cell assembly of the present embodiment 1 includes a photovoltaic cell layer encapsulated in an encapsulation structure, and the photovoltaic cells 1 in the photovoltaic cell layer are interconnected
  • the busbar 2 leads out current, and there is a conductive connection point 4 between the photovoltaic cell 1 and the interconnecting busbar 2, which is used for the preliminary fixing of the interconnecting busbar 2 and the photovoltaic cell 1, and the interconnecting busbar on the surface of the photovoltaic cell is covered
  • the grid wire adhesive layer 3-1 and the grid wire support layer 3-2 are used to completely fix the interconnection busbars 2 on the surface of the photovoltaic cell 1, the surface of the interconnection busbars 2 has a low melting point welding layer, and the interconnection busbars 2 Form electrical contact with the surface of the photovoltaic cell 1 through the low-melting point welding layer, the grid support layer 3-2 is bonded to the surface of the photovolt
  • the photovoltaic cell layer is formed by electrically connecting at least one photovoltaic cell string, and the photovoltaic cells 1 in the photovoltaic cell string are electrically connected through the interconnection busbar 2, and the photovoltaic cell string extends along the first direction in the photovoltaic cell layer and extends along the second direction Arranged at intervals.
  • the composite film 3 covers the entire surface of the photovoltaic cell layer with the entire photovoltaic cell layer as the smallest covering unit.
  • the grid line support layer 3-2 is a polymer material that is not easy to flow at the lamination temperature, such as PET, PVF, PMMA or PC, etc., and its thickness is about 5um to 50um.
  • the grid line support layer 3-2 can be used for surface treatment.
  • the grid line bonding layer 3-1 is a polymer adhesive material that is easy to flow at the lamination temperature, such as silica gel, POE, EVA, TPU or other thermal adhesives, etc., and its thickness is 20um ⁇ 150um
  • the encapsulation adhesive layer 3-3 is a polymer adhesive material that is easy to flow at the lamination temperature, such as EVA, POE, PVB or TPO and other common film layers, and its thickness is about 200um to 600um
  • the photovoltaic cell 1 is There is no busbar photovoltaic cell, and the interconnecting busbar line 2 is a multi-busbar ribbon.
  • the interconnection busbar 2, the photovoltaic cell 1 and the composite film 3 are prepared in advance.
  • the interconnection busbar 2 is a multi-busbar with high purity, low expansion coefficient, and a low-melting point welding layer with oxygen-free copper as the metal core.
  • Soldering ribbon, the low melting point soldering layer is a tin layer doped with Bi, Ag and other elements to lower the melting point, such as Sn42Bi57Ag1
  • the photovoltaic cell 1 is a photovoltaic cell without a busbar, and there are multiple pads on the photovoltaic cell without a busbar for multiple The connection of busbar ribbon to photovoltaic cells without busbar.
  • connection points 4 are formed for preliminarily fixing the interconnected busbars 2 on the photovoltaic cells 1, and the photovoltaic cells 1 are connected in series through the interconnected busbars 2 to form a string of photovoltaic cells.
  • a photovoltaic cell 1 with 18 interconnected busbars 2 on the surface usually needs to pass 180 connection points 4 to meet the requirements of interconnecting busbars 2 and photovoltaic cells 1. There are technical requirements for reliable mechanical fixation between them.
  • the photovoltaic cell 1 is connected to the interconnection busbar 2 through 36 connection points 4, and the photovoltaic cell string required in this embodiment 1 is prepared.
  • the photovoltaic cell 1 By connecting 54 connection points 4 to the interconnection busbars 2, the photovoltaic cell string required in the first embodiment is prepared.
  • the required number of connection points 4 is much smaller than the number of connection points 4 required in the existing busbar-free photovoltaic cell electrical connection technology interconnecting busbar lines 2 through pad welding, which can save the consumption of pad Ag paste.
  • the encapsulation backplane 6, the composite film 3, the photovoltaic cell string, the composite film 3, and the encapsulation panel 5 are sequentially laid to obtain a laminate for component lamination.
  • the package backplane 6 and the package panel 5 are package structures of components.
  • the composite film 3 of this embodiment 1 is a three-layer composite structure of the encapsulation adhesive layer 3-3, the grid line support layer 3-2 and the grid line adhesive layer 3-1, the encapsulation adhesive layer 3-3 can be omitted. Typesetting steps to simplify the production process.
  • Lamination is carried out at a lamination temperature higher than the melting point of the low-melting-point soldering layer of the interconnecting busbar 2.
  • the low-melting-point soldering layer of the interconnecting busbar 2 is melted, and the Ag on the surface of the photovoltaic cell 1 is Fine grid lines form a good conductive relationship.
  • the photovoltaic cell 1 is a heterojunction cell, during lamination, the low-melting-point soldering layer melts, and while forming a good conductive relationship with the Ag thin grid lines on the surface of the photovoltaic cell 1, it also forms a good conductive relationship with the 2um surface of the photovoltaic cell 1.
  • ⁇ 7um suede is bonded to form good physical contact and certain conductive contact.
  • the grid line bonding layer 3-1 is heated and flows, so that the interconnection busbars 2 are embedded in the grid line bonding layer 3-1, and the grid line support layer 3-2 is pressed on the interconnection busbars 2, and the layer After pressing and cooling, the grid wire adhesive layer 3-1 and the grid wire support layer 3-2 tightly press the interconnection busbars 2 on the surface of the photovoltaic cell 1, restrict the movement of the interconnection busbars 2, and realize interconnection busbars.
  • the complete fixation of the grid lines 2 helps the component to resist the temperature change of the external environment.
  • Embodiment 2 a method for manufacturing a photovoltaic cell module, is basically the same as Embodiment 1, the difference is that the composite film 3 is a two-layer composite of the grid wire support layer 3-2 and the grid wire bonding layer 3-1. structure, as shown in Figures 7 and 8.
  • Step (c) is: sequentially laying the encapsulation backplane 6, encapsulation adhesive layer 3-3, composite film 3, photovoltaic cell strings, composite film 3, encapsulation adhesive layer 3-3, and encapsulation panel 5.
  • interconnection busbars 2 of photovoltaic cell strings are preliminarily fixed on the surface of photovoltaic cells 1 through non-conductive connection points 4 .
  • the non-conductive connection point 4 is usually bonded by glue, such as hot melt glue, silica gel, acrylic glue, epoxy glue and the like. Part of the glue needs to be cured by local UV light irradiation to form a bonding effect.
  • the consumption of Ag paste in the welding pad is zero.
  • Embodiment 4 as shown in FIG. 9 , a method for manufacturing a photovoltaic cell module is basically the same as that of Embodiment 1, the difference is that the grid wire bonding layer 3-1 and the grid wire supporting layer 3-2 are respectively In the form of a film, the entire surface of the photovoltaic cell layer is sequentially covered with the entire photovoltaic cell layer as the smallest covering unit.
  • step (a) the composite preparation process of the grid wire bonding layer 3-1 and the grid wire supporting layer 3-2 is omitted.
  • Step (c) is: sequentially laying the encapsulation backplane 6, the encapsulation adhesive layer 3-3, the grid wire support layer 3-2, the grid wire adhesive layer 3-1, the photovoltaic cell string, and the grid wire adhesive layer 3-1 , grid line support layer 3-2, encapsulation adhesive layer 3-3, encapsulation panel 5.
  • Embodiment 5 a method for manufacturing a photovoltaic cell module, is basically the same as Embodiment 1, the difference is that the grid wire bonding layer 3-1 and the grid wire supporting layer 3-2 contain the grid wire bonding layer 3 -1 and grid line support layer 3-2 in the form of a composite film strip 3' pasted on the surface of the photovoltaic cell string.
  • the composite film strip 3' is a two-layer composite structure of a grid line support layer 3-2 and a grid line bonding layer 3-1, as shown in FIG. 8 .
  • the composite film strip 3' takes the photovoltaic cell string as the smallest covering unit, and the composite film strip 3' extends along the first direction on the surface of the photovoltaic cell string and is arranged at intervals along the second direction.
  • the first direction is the extension of the interconnecting busbar 2 direction
  • the second direction is a direction perpendicular to the extending direction of the interconnection busbar lines 2 .
  • the composite film strips 3' are pasted on the surface of the photovoltaic cell string in a manner extending along the first direction and arranged at intervals along the second direction.
  • the photovoltaic cell string pasted with the composite film strip 3' enters the component layout step for layout.
  • the composite film strip 3' is pasted on the surface of the photovoltaic cell string by means of a little heating grid wire bonding layer 3-1.
  • the encapsulation backsheet 6, the encapsulation adhesive layer 3-3, the photovoltaic cell string covered with the composite film strip 3', the encapsulation adhesive layer 3-3, and the encapsulation panel 5 are sequentially laid to obtain a laminate for component lamination.
  • Lamination is carried out at a lamination temperature higher than the melting point of the low-melting-point soldering layer of the interconnecting busbar 2. During lamination, the low-melting-point soldering layer of the interconnecting busbar 2 is melted, and the Ag on the surface of the photovoltaic cell 1 is Fine grid lines form a good conductive relationship.
  • the grid line bonding layer 3-1 is heated and flows, so that the interconnection busbars 2 are embedded in the grid line bonding layer 3-1, and the grid line support layer 3-2 is pressed on the interconnection busbars 2, and the layer After pressing and cooling, the grid wire adhesive layer 3 - 1 and the grid wire support layer 3 - 2 tightly press the interconnection busbars 2 on the surface of the photovoltaic cell 1 to limit the movement of the interconnection busbars 2 .
  • the photovoltaic cell assembly produced by the manufacturing method of the photovoltaic cell assembly in this embodiment 5 includes a photovoltaic cell layer encapsulated in an encapsulation structure, and the photovoltaic cell 1 in the photovoltaic cell layer derives current through the interconnecting busbar 2, and the photovoltaic cell 1
  • the surface of the battery 1 forms an electrical contact
  • the grid wire support layer 3-2 is bonded to the surface of the photovoltaic cell 1 through the grid wire bonding layer 3-1
  • the interconnected main grid lines 2 are embedded in the grid wire bonding layer 3-1
  • the grid wire support The layer 3-2 is pressed on the interconnection main grid line 2, and there is an encapsulation adhesive layer 3-3 between the grid line support layer 3-2 and the package structure on the same side, which is used to connect the grid line support layer 3-2 to the same side
  • the packaging structure is bonded together.
  • the photovoltaic cell layer is formed by electrically connecting at least one photovoltaic cell string, and the photovoltaic cells 1 in the photovoltaic cell string are electrically connected through the interconnection busbar 2, and the photovoltaic cell string extends along the first direction in the photovoltaic cell layer and extends along the second direction Arranged at intervals.
  • the grid wire bonding layer 3-1 and the grid wire supporting layer 3-2 cover the surface of the photovoltaic cell layer at intervals in the form of a composite film strip 3' containing the grid wire bonding layer 3-1 and the grid wire supporting layer 3-2 .
  • the composite film strip 3' can be regarded as the smallest covering unit with the photovoltaic cell string, or as the photovoltaic cell layer As the smallest covering unit, the composite film strips 3 ′ extend along the first direction on the surface of the photovoltaic cell layer and are arranged at intervals along the second direction.
  • Each interconnected busbar 2 on the surface of the photovoltaic cell 1 is completely fixed by a composite film strip 3'. In Fig. 10, each interconnected busbar 2 corresponds to one composite film strip 3', but it is not excluded that multiple interconnected busbars 2 correspond to one composite film strip 3'.
  • the width of the interconnected main grid lines 2 is 0.27mm, and the spacing between the interconnected main grid lines 2 is 8.75mm, then the width of the composite film strip 3' only needs to be about 4mm, and the composite film strip 3 The distance between them is about 4.75mm, and the amount of the composite film strip 3' is about 45% of the area of the photovoltaic cell layer.
  • this embodiment 5 can reduce the consumption of the composite rubber strip 3', which has a cost advantage, and the shading is reduced, and the power will be improved.
  • Embodiment 6 a method for manufacturing a photovoltaic cell module, is basically the same as that of Embodiment 5, the difference is that it includes, from first to last, the preparation step of the photovoltaic cell string, the layout step of the photovoltaic cell string, the layout step of the module, and the module In the laminating step, in the layout step of the photovoltaic cell strings, the photovoltaic cell strings are arranged as a photovoltaic cell layer according to the module specifications, and the composite film strip 3' is pasted on the surface of the photovoltaic cell layer with the photovoltaic cell layer as the smallest covering unit.
  • the composite film strips 3' extend along the second direction on the surface of the photovoltaic cell layer and are arranged at intervals along the first direction, and the photovoltaic cell layer pasted with the composite film strip 3' enters the component layout step for component layout.
  • the composite membrane strip 3' is pasted by a little heating grid line bonding layer 3-1.
  • Photovoltaic cell strings are arranged in full layout as photovoltaic cell layer according to module specification requirements, composite film strip 3' is pasted on the surface of photovoltaic cell layer with photovoltaic cell layer as the smallest covering unit, and composite film strip 3' is placed along the surface of photovoltaic cell layer The second direction is extended and arranged at intervals along the first direction, and the photovoltaic cell layer pasted with the composite film strip 3' enters the component layout step for component layout.
  • the packaging backsheet 6, the packaging adhesive layer 3-3, the photovoltaic cell layer coated with the composite film strip 3', the packaging adhesive layer 3-3, and the packaging panel 5 are sequentially laid to obtain a laminate for component lamination.
  • Lamination is carried out at a lamination temperature higher than the melting point of the low-melting-point soldering layer of the interconnecting busbar 2. During lamination, the low-melting-point soldering layer of the interconnecting busbar 2 is melted, and the Ag on the surface of the photovoltaic cell 1 is Fine grid lines form a good conductive relationship.
  • the grid line bonding layer 3-1 is heated and flows, so that the interconnection busbars 2 are embedded in the grid line bonding layer 3-1, and the grid line support layer 3-2 is pressed on the interconnection busbars 2, and the layer After pressing and cooling, the grid wire adhesive layer 3 - 1 and the grid wire support layer 3 - 2 tightly press the interconnection busbars 2 on the surface of the photovoltaic cell 1 to limit the movement of the interconnection busbars 2 .
  • the photovoltaic cell assembly obtained by the manufacturing method of the photovoltaic cell assembly of the present embodiment 6 is basically the same as that of embodiment 5, the difference is that the composite film strip 3' is on the surface of the photovoltaic cell layer along the first Extending in two directions and arranged at intervals along the first direction, each interconnected busbar 2 on the surface of the photovoltaic cell 1 is fixed at multiple points by a plurality of intersecting composite film strips 3', and the fixed points are interconnected busbars 2 and Intersection of composite membrane strips 3'.
  • the width of the interconnected main grid lines 2 is 0.27 mm, and the spacing between the interconnected main grid lines 2 is 8.75 mm, then the width of the composite membrane strip 3' only needs to be about 4 mm, and the composite membrane strip 3 The distance between them is about 8mm, and the amount of the composite film strip 3' is about 30% of the area of the photovoltaic cell layer. Compared with embodiment 5, the cost and shading are more advantageous.
  • Embodiment 7 compared with Embodiment 2, is basically the same, the difference is that the photovoltaic cell 1 is an IBC back-junction cell without a main grid, the interconnection busbars 2 are located on one side of the photovoltaic cell string, and the composite film 3 is formed by a single photovoltaic cell Covering is done for the smallest covering unit, as shown in Figures 15 and 16.
  • Embodiment 8 is basically the same as Embodiment 7, except that the composite film 3 covers the entire surface of the photovoltaic cell layer with the entire photovoltaic cell layer as the smallest covering unit.
  • embodiment 9 is basically the same, the difference is that: the grid line support layer is in the form of film, and the grid line bonding layer is covered in liquid form in sequence.
  • the encapsulation adhesive layer 3-3 and grid wire adhesive layer 3-1 are made of liquid silicone, and the grid wire support layer 3-2 is made of PET, PVF, PMMA or PC.
  • the interconnected busbar 2 and the photovoltaic cell 1 are prepared in advance, the photovoltaic cell 1 is a photovoltaic cell without a busbar, and there are multiple welding pads on the photovoltaic cell without a busbar.
  • the coating method of the liquid silica gel is as follows: taking the photovoltaic cell layer as the smallest covering unit, mixing the A/B components of the liquid silica gel before coating.
  • Lamination is carried out at a lamination temperature higher than the melting point of the low-melting-point soldering layer of the interconnecting busbar 2. During lamination, the low-melting-point soldering layer of the interconnecting busbar 2 is melted, and the Ag on the surface of the photovoltaic cell 1 is Fine grid lines form a good conductive relationship.
  • the grid line supporting layer 3-2 is pressed on the interconnected main grid lines 2, and the grid line bonding layer 3-1 is heated to become a solid state.
  • the grid line bonding layer 3-1 and The grid support layer 3 - 2 tightly presses the interconnection busbars 2 on the surface of the photovoltaic cell 1 to limit the movement of the interconnection busbars 2 .
  • Embodiment 10 compared with Embodiment 1, is basically the same, the difference is that: the battery grid wire surface of the photovoltaic cell 1 has a low-melting point welding layer, which melts at the lamination temperature, and is used to form a good electrical connection with the interconnecting main grid wire 2. touch.
  • the interconnection busbar 2 is a metal ribbon with a Sn coating layer, and the melting point of the Sn coating layer is about 230°C.
  • the surface of the photovoltaic cell 1 is electroplated with Cu fine grid lines, and then electroplated with SnBi alloy on the surface of the Cu thin grid lines, the melting point of which is lower than 150°C.
  • the SnBi alloy on the surface of the Cu fine grid line melts, forming a good electrical connection with the interconnection main grid line 2 .
  • Embodiment 11 compared with Embodiment 1, is basically the same, the difference is that: the surface of the interconnection busbar 2 has conductive glue, which is deformed under lamination pressure to form a good electrical contact with the photovoltaic cell 1 .
  • the interconnecting busbar 2 is a metal ribbon coated with an electroconductive adhesive (ECA), and the electroconductive adhesive (ECA) can be deformed under lamination pressure, and forms a good bond with the thin metal grid on the surface of the photovoltaic cell 1 electrical connection.
  • the metal ribbons are Cu ribbons, and the metal thin grid lines are Cu or Ag thin grid lines.
  • Embodiment 12 compared with Embodiment 1, is basically the same, the difference is that the grid support layer 3-2 can also use cross-linked EVA, POE, PVB and other materials, cross-linked EVA, POE, PVB and other materials
  • cross-linking is performed first, and the cross-linking rate is preferably between 80% and 100%.
  • the grid line supporting layer 3-2 and the grid line bonding layer 3-1 are all EVA materials, because the light transmittance of the EVA film is far better than the PET film, so there is no need to limit the material as the grid line supporting layer 3-2.
  • the thickness of the EVA film Generally, the grid line support layer 3-2 can be made of 300um cross-linked EVA film through radiation cross-linking or heating, and the grid line bonding layer 3-1 can be made of conventional EVA film with a thickness of 50um. membrane.
  • Embodiment 13 a photovoltaic cell assembly, including an encapsulation structure and a photovoltaic cell layer encapsulated in the encapsulation structure, the photovoltaic cell 1 in the photovoltaic cell layer derives current through the interconnection busbar 2, and the photovoltaic cell 1 and the interconnection busbar 2 There is a conductive or non-conductive connection point 4 between them, which is used for preliminary fixing of the interconnection main grid line 2 and the photovoltaic cell 1, and the surface of the photovoltaic cell 1 has a grid line bonding layer 3-1 and a grid line support layer 3-2 for The interconnected main grid lines 2 are completely fixed on the surface of the photovoltaic cell 1, the grid line support layer 3-2 is bonded to the surface of the photovoltaic cell 1 through the bonding effect of the grid line bonding layer 3-1, and the grid line support layer 3-2 is pressed against the surface of the photovoltaic cell 1.
  • the grid wire bonding layer 3-1 is located between the grid wire supporting layer 3-2 and the photovoltaic cell 1, and is used to attach the grid wire supporting layer 3-2 to the surface of the photovoltaic cell 1, and the grid wire bonding layer 3-1
  • the thickness is smaller than that of the interconnecting busbar 2 .
  • Example 1 Compared with Example 1, the difference is: as shown in FIG. 17 , relative to the smallest covering unit such as photovoltaic cell 1 , the grid support layer 3 - 2 is a whole film, and the grid bonding layer 3 - 1 is a film strip. There is a gap between the interconnecting main grid lines 2 and the grid line bonding layer 3-1. Because there is a gap between the interconnection busbars 2 and the gridline bonding layer 3-1, the thickness of the gridline bonding layer 3-1 may be slightly larger than the thickness of the interconnection busbars 2 before the components are laminated. The wire bonding layer 3-1 is compressed and thinned after lamination.
  • the grid line support layer 3-2 is a film strip
  • the grid line bonding layer 3-1 is a whole film
  • the grid line bonding layer 3-1 1 and the grid line supporting layer 3-2 are film strips.
  • Embodiment 14 compared with Embodiment 13, differs in that: as shown in Figure 20, the grid wire support layer 3-2 is located between the grid wire adhesive layer 3-1 and the photovoltaic cell 1, and the grid wire support layer 3-2
  • the grid line bonding layer 3-1 is only shielded in a local area, and the grid line bonding layer 3-1 is shielded by the grid line supporting layer 3-2 and the non-shielding area is connected with the grid line supporting layer 3-2 and
  • the photovoltaic cell 1 is bonded to attach the grid support layer 3 - 2 to the surface of the photovoltaic cell 1 .
  • the grid wire support layer 3-2 is a film strip
  • the grid wire bonding layer 3-1 is a whole film
  • the grid wire bonding layer 3-1 can be the package Bonding layer 3-3.
  • the structure of the photovoltaic cell module is an encapsulation panel 5, a grid wire bonding layer 3-1, a grid wire supporting layer 3-2, a photovoltaic cell layer, a grid wire supporting layer 3-2, a grid wire bonding layer 3-1, and a package back board6.
  • the grid line support layer 3-2 and the grid line bonding layer 3-1 are a whole film
  • the grid line support layer 3-2 has hollows, and the area, shape and distribution density of the hollowed out areas are guaranteed to ensure the assembly It can be designed arbitrarily under the condition that the packaging quality and the interconnection busbar 2 are reliably fixed.

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Abstract

本发明涉及一种光伏电池组件及其制造方法。该光伏电池组件包括光伏电池层，光伏电池和互联主栅线之间具有导电或非导电连接点，光伏电池表面具有栅线粘结层和栅线支撑层，栅线支撑层通过栅线粘结层的粘结作用贴合在光伏电池表面，栅线支撑层压在互联主栅线上。该组件的制造方法包括如下步骤：首先互联主栅线通过导电或非导电连接点初步固定在光伏电池的表面；然后在光伏电池表面覆盖栅线支撑层和栅线粘结层，在栅线支撑层和栅线粘结层上施加压力，将互联主栅线通过栅线支撑层完全固定在光伏电池表面。有益效果是：本发明相比通过焊盘对互联主栅线进行机械固定的无主栅光伏电池电连接方案，可大幅降低互联主栅线连接点Ag耗；相比胶膜电极无主栅光伏电池电连接方案，制造方便，成本更低。

Description

光伏电池组件及其制造方法 技术领域
本发明涉及光伏技术领域，特别是一种光伏电池组件及其制造方法。
背景技术
近年来光伏新能源的应用发展迅猛。和储能、电动车、充电桩等技术结合，新的模式将实现光伏发电的就地消纳，因此屋顶分布式和建筑一体化光伏(BIPV)，将成为光伏应用的下一个重点。
屋顶光伏以及BIPV由于应用面积有限，因此，需要更加高效的电池和组件。在下一代电池当中，最有潜力的新电池应当是TOPCON和异质结电池。在下一代组件技术当中，组件效率最高的当属叠瓦组件。
目前，这三种技术都存在着成本过高的问题。和主流的PREC技术相比，异质结电池的Ag浆耗量增加了150％，TOPCON电池的银浆耗量增加了50％。当这些电池和叠瓦技术结合进行组件封装的时候，Ag浆耗量还要进一步增加。
如何降低Ag浆耗费量是光伏行业发展和BIPV屋顶光伏发展的核心瓶颈。能不能降低Ag浆耗量，将高效电池组件做到又好又便宜是光伏产业最大的挑战。
目前产业内通用的9BB主栅光伏电池比5BB主栅光伏电池Ag浆耗量低，这是因为9BB主栅光伏电池的电池主栅数量更多，两个电池主栅之间的电流传输距离大幅度降低，从而可以减少电池细栅Ag浆用量。如果仍然采用这一技术路线，继续增加主栅，电池细栅Ag浆用量还能降低，但电池主栅Ag浆却在增加，有主栅光伏电池的电连接方案中电池主栅通过与焊带进行焊接，同时起到机械固定和电流导通的作用。因此，总Ag浆耗量无法进一步降低。
而无主栅光伏电池技术没有电池主栅，可以节省电池主栅Ag浆用量。
现有技术中无主栅光伏电池具有两种电连接方案，第一种是在无主栅光伏电池的表面设置Ag浆焊盘，用于多主栅焊带与无主栅光伏电池的焊接。
因为多主栅焊带存在热胀冷缩现象，在-40度到85度的冷热循环时，会对光伏电池表面有来回切割的效应，从而磨损细栅Ag线(如TOPCON，HJT，PERC电池)或电池绒面上的ITO导电层(如HJT电池)，造成失效。故焊盘的数量不能过少，以保证焊带与光伏电池之间具有可靠的机械固定。
故该第一种这种无主栅光伏电池电连接方案还是存在不少的焊盘Ag浆消耗。
第二种是通过带多主栅焊带的胶膜电极进行无主栅光伏电池的电连接，无主栅光伏电池的表面无需设置Ag浆焊盘，进一步降低光伏组件的总Ag浆耗量。
瑞士梅耶博格公司的中国专利文献CN108419433公开了该第二种无主栅光伏电池电连接方案，通过胶膜电极进行多主栅焊带与无主栅光伏电池的电连接，带多主栅焊带的胶膜电极包括一层胶膜，多主栅焊带粘附并嵌入在胶膜上，再用胶膜将多主栅焊带固定在电池表面，形成多主栅焊带和无主栅光伏电池的良好导电接触，如图12所示。
该第二种这种无主栅光伏电池电连接方案的缺陷在于：制备这种带多主栅焊带的胶膜电极不仅需要把多主栅焊带和胶膜结合到一起，而且需要不断交错调整翻转胶膜的黏胶面，导致这种带多主栅焊带的胶膜电极的价格过高；同时应用带多主栅焊带的胶膜电极的光伏组件的工艺制造成本也高，实际降低组件成本的作用有限。
另一方面，为降低硅片成本，光伏电池的硅片有变薄的市场需求，但是当硅片变薄时，因为焊带即互联主栅线和薄硅片之间的热膨胀的不均匀，造成的应力和应变也容易造成硅片破损。尤其是铜焊带的热膨胀形变在其末端效应最大，根据澳洲新南威尔士大学的研究论文[Solar Energy Materials&Solar Cells 215(2020)110667],铜焊带末端的应力可以积累到150MPa以上，这非常容易造成碎片。
发明内容
本发明所要解决的技术问题是：在保证互联主栅线与光伏电池之间具有可靠的机械固定的同时降低银耗。
本发明解决其技术问题所采用的技术方案是：一种光伏电池组件，包括光伏电池层，光伏电池层内的光伏电池通过互联主栅线导出电流，光伏电池和互联主栅线之间具有导电或非导电连接点，用于互联主栅线和光伏电池的初步固定，光伏电池表面具有栅线粘结层和栅线支撑层，用于将互联主栅线完全固定在光伏电池表面，栅线支撑层通过栅线粘结层的粘结作 用贴合在光伏电池表面，栅线支撑层压在互联主栅线上。
在本发明的该方案中，对互联主栅线进行机械固定的功能由栅线支撑层提供，栅线支撑层将互联主栅线紧紧地压在光伏电池的表面，限制互联主栅线的移动，实现互联主栅线的完全固定，帮助组件抵抗外界环境温度变化，互联主栅线与光伏电池之间的连接点只是起到初步固定作用，方便将光伏电池连接为光伏电池串后用于后续制备步骤，故相比通过很多Ag浆焊盘对互联主栅线进行机械固定的现有无主栅光伏电池电连接方案，本发明的方案所需的连接点的数量小，可以做到低连接点Ag耗或无连接点Ag耗。和瑞士梅耶博格公司的第二种无主栅光伏电池电连接方案相比，本发明的方案的制造成本更低，依托传统现有设备或进行简单改造即可实施。
本发明的方案中，通过栅线支撑层对互联主栅线进行机械固定，热膨胀造成的应力被均匀分布到光伏电池表面的100mm左右的整条互联主栅线上，可以将互联主栅线的末端的应力降低100倍左右。因此，采用本发明的方法，可大大降低硅片破损的几率。同时，即使由于其他原因，如电池制造过程中的碰撞问题，导致硅片破损了，也会被栅线粘结层和栅线支撑层粘结在一起，不影响发电。因此，使用本发明有利于硅片薄片化。
本发明普遍适用于各种高效电池，如常见的异质结电池、钝化接触TOPCON电池、IBC背结电池、钙钛矿电池、及其他薄膜和晶体硅的叠层电池等。本发明尤其有利于在异质结电池上实施，拉近异质结电池和常规PERC电池的材料成本差距。
栅线支撑层通过栅线粘结层的粘结作用贴合在光伏电池表面的一种具体方案为：栅线粘结层位于栅线支撑层与光伏电池之间，用于将栅线支撑层贴合在光伏电池表面，栅线粘结层的厚度小于互联主栅线的厚度。
进一步限定，互联主栅线嵌在栅线粘结层中，或者互联主栅线与栅线粘结层之间存在间隙。当互联主栅线嵌在栅线粘结层中时，栅线粘结层和栅线支撑层可共同对互联主栅线进行机械固定，固定效果相对更佳。
进一步限定，光伏电池组件还包括封装结构，光伏电池层封装在封装结构内，栅线粘结层和栅线支撑层覆盖在光伏电池表面的互联主栅线上，互联主栅线的表面具有低熔点焊接层，互联主栅线通过低熔点焊接层与光伏电池的表面形成电接触，互联主栅线嵌入栅线粘结层，，栅线支撑层与同侧的封装结构之间具有封装粘结层，用于将栅线支撑层与同侧的封装结构粘结在一起。
进一步限定，相对最小覆盖单元，栅线支撑层和栅线粘结层都为整张膜；或者，栅线支撑层为整张膜，栅线粘结层为膜条；或者，栅线支撑层为膜条，栅线粘结层为整张膜；或者，栅线粘结层和栅线支撑层都为膜条。
进一步限定，栅线粘结层和栅线支撑层为含有栅线粘结层和栅线支撑层的复合膜条形式，并以至少一个光伏电池为最小覆盖单元，复合膜条沿第一方向延伸并沿第二方向间隔排布；或者，复合膜条沿第二方向延伸并沿第一方向间隔排布，第一方向为互联主栅线的延伸方向，第二方向为与互联主栅线的延伸方向垂直的方向。
进一步限定，栅线支撑层和栅线粘结层为高分子材料，栅线支撑层为PET、EVA、POE、PVB、PVF、PMMA或PC，栅线粘结层为硅胶、POE、EVA、TPU或液态硅胶，光伏电池为无主栅光伏电池，互联主栅线为多主栅焊带。
栅线支撑层通过栅线粘结层的粘结作用贴合在光伏电池表面的另一种具体方案为：栅线支撑层位于栅线粘结层与光伏电池之间，栅线支撑层仅在局部区域遮挡栅线粘结层，栅线粘结层的被栅线支撑层的遮挡的遮挡区域和非遮挡区域分别与栅线支撑层和光伏电池粘结，用于将栅线支撑层贴合在光伏电池表面。
进一步限定，相对最小覆盖单元，栅线支撑层和栅线粘结层都为整张膜，栅线支撑层上具有镂空；或者，栅线支撑层为膜条，栅线粘结层为整张膜。
为保证互联主栅线与光伏电池形成良好的电连接关系，进一步限定，互联主栅线的表面具有焊接层或导电胶，焊接层为熔化温度小于组件层压温度的低熔点焊接层，互联主栅线通过焊接层或导电胶与光伏电池电接触。本发明不排除互联主栅线与光伏电池通过直接接触进行电连接，导出光伏电池的电流。
一种上述光伏电池组件的制造方法，包括如下步骤：首先互联主栅线通过导电或非导电连接点初步固定在光伏电池的表面；然后在光伏电池表面覆盖栅线支撑层和栅线粘结层，在栅线支撑层和栅线粘结层上施加压力，将互联主栅线通过栅线支撑层完全固定在光伏电池表面。
进一步限定，由先至后依次具体包括光伏电池串的制备步骤和组件层压步骤，在光伏电池串的制备步骤中互联主栅线通过导电或非导电连接点初步固定在光伏电池的表面，在组件层压步骤中，在栅线支撑层和栅线粘结层上施加的层压压力，将互联主栅线通过栅线支撑层完全固定在光伏电池表面，并在组件层压步骤中，使互联主栅线与光伏电池电接触。
进一步限定，栅线粘结层和栅线支撑层分别以膜的形式依次进行覆盖；或者，栅线粘结层和栅线支撑层以含有栅线粘结层和栅线支撑层的复合膜的形式进行覆盖；或者，栅线粘结层和栅线支撑层以含有栅线粘结层和栅线支撑层的复合膜条的形式进行覆盖；或者，栅线支撑层以膜的形式、栅线粘结层以液态形式依次进行覆盖。
进一步限定，互联主栅线与光伏电池的连接点通过焊接或粘结方式形成。
一种光伏电池组件的制造方法，首先进行光伏电池串的制备，使光伏电池串的互联主栅 线通过导电或非导电连接点初步固定在光伏电池的表面，然后，在光伏电池表面的互联主栅线上覆盖栅线粘结层和栅线支撑层，栅线粘结层位于栅线支撑层和光伏电池之间，最后通过组件层压工艺，将光伏电池封装在光伏组件的封装结构内，并将互联主栅线通过栅线粘结层和栅线支撑层完全固定在光伏电池的表面。栅线支撑层通过栅线粘结层粘结在光伏电池表面，栅线粘结层的厚度小于互联主栅线的厚度，通过组件层压工艺使栅线粘结层受热流动，互联主栅线嵌入栅线粘结层，栅线支撑层压在互联主栅线上，互联主栅线的表面具有低熔点焊接层，在层压温度下熔化，与光伏电池的表面形成电接触。
进一步限定，栅线粘结层和栅线支撑层分别以膜的形式依次进行覆盖；或者，栅线粘结层和栅线支撑层以含有栅线粘结层和栅线支撑层的复合膜的形式进行覆盖；或者，栅线粘结层和栅线支撑层以含有栅线粘结层和栅线支撑层的复合膜条的形式进行覆盖；或者，栅线支撑层以膜的形式、栅线粘结层以液态形式依次进行覆盖。
进一步限定，栅线粘结层和栅线支撑层以至少一个光伏电池为最小覆盖单元进行覆盖。
进一步限定，栅线粘结层和栅线支撑层以含有栅线粘结层和栅线支撑层的复合膜条的形式进行覆盖，复合膜条沿第一方向或第二方向延伸，第一方向为互联主栅线的延伸方向，第二方向为与互联主栅线的延伸方向垂直的方向。
进一步限定，该光伏电池组件的制造方法，由先至后依次包括光伏电池串的制备步骤、组件排版步骤和组件层压步骤，栅线粘结层和栅线支撑层在组件排版步骤排版至光伏电池表面的互联主栅线上。
更进一步限定，栅线粘结层和栅线支撑层以光伏电池层为最小覆盖单元，并分别以膜的形式依次覆盖在光伏电池层的表面；或者，栅线粘结层和栅线支撑层以光伏电池层为最小覆盖单元，并以含有栅线粘结层和栅线支撑层的复合膜的形式覆盖在光伏电池层的表面；或者，栅线粘结层和栅线支撑层以光伏电池层为最小覆盖单元，并且栅线支撑层以膜的形式、栅线粘结层以液态形式依次覆盖在光伏电池层的表面。
进一步限定，该光伏电池组件的制造方法，由先至后依次包括光伏电池串的制备步骤、组件排版步骤和组件层压步骤，栅线粘结层和栅线支撑层以光伏电池串为最小覆盖单元，并以含有栅线粘结层和栅线支撑层的复合膜条的形式贴覆在光伏电池串的表面，复合膜条在光伏电池串的表面沿第一方向延伸并沿第二方向间隔排布，第一方向为互联主栅线的延伸方向，第二方向为与互联主栅线的延伸方向垂直的方向，贴覆复合膜条的光伏电池串进入组件排版步骤进行排版。
进一步限定，该光伏电池组件的制造方法，由先至后依次包括光伏电池串的制备步骤、光伏电池串排版步骤、组件排版步骤和组件层压步骤，在光伏电池串排版步骤中，光伏电池 串按照组件规格要求整版排布为光伏电池层，栅线粘结层和栅线支撑层以光伏电池层为最小覆盖单元，并以含有栅线粘结层和栅线支撑层的复合膜条的形式贴覆在光伏电池层的表面，复合膜条在光伏电池层的表面沿第二方向延伸并沿第一方向间隔排布，第一方向为互联主栅线的延伸方向，第二方向为与互联主栅线的延伸方向垂直的方向，贴覆复合膜条的光伏电池层进入组件排版步骤进行组件排版。
进一步限定，在光伏电池串的制备步骤中，互联主栅线与光伏电池的连接点通过焊接或粘结方式形成。
焊接方式如电磁焊、合金热焊接、超声焊、摩擦焊、电阻焊、激光焊等。
粘结方式如热熔胶粘结、硅胶粘结、丙烯酸胶粘结、环氧胶粘结等。
进一步限定，栅线粘结层和栅线支撑层以含有栅线粘结层和栅线支撑层的复合膜的形式进行覆盖，复合膜为三层复合结构，包括封装粘结层、栅线支撑层和栅线粘结层，封装粘结层用于将栅线支撑层与同侧的封装结构粘结在一起，封装粘结层和栅线粘结层位于栅线支撑层的正反两面。
一种光伏电池组件，包括封装在封装结构内的光伏电池层，光伏电池层内的光伏电池通过互联主栅线导出电流，光伏电池和互联主栅线之间具有导电或非导电连接点，用于互联主栅线和光伏电池的初步固定，光伏电池表面的互联主栅线上覆盖栅线粘结层和栅线支撑层，用于将互联主栅线完全固定在光伏电池表面，互联主栅线的表面具有低熔点焊接层，互联主栅线通过低熔点焊接层与光伏电池的表面形成电接触，栅线支撑层通过栅线粘结层粘结在光伏电池表面，互联主栅线嵌入栅线粘结层，栅线支撑层压在互联主栅线上，栅线支撑层与同侧的封装结构之间具有封装粘结层，用于将栅线支撑层与同侧的封装结构粘结在一起。
进一步限定，栅线粘结层和栅线支撑层为膜形式，并以至少一个光伏电池为最小覆盖单元。
进一步限定，栅线粘结层和栅线支撑层为含有栅线粘结层和栅线支撑层的复合膜条形式，并以至少一个光伏电池为最小覆盖单元。
更进一步限定，复合膜条沿第一方向延伸并沿第二方向间隔排布，或者，复合膜条沿第二方向延伸并沿第一方向间隔排布，第一方向为互联主栅线的延伸方向，第二方向为与互联主栅线的延伸方向垂直的方向。
更进一步限定，复合膜条以光伏电池层为最小覆盖单元，光伏电池层由至少一个光伏电池串电连接而成，光伏电池串内的光伏电池通过互联主栅线进行电连接，光伏电池串在光伏电池层中沿第一方向延伸并沿第二方向间隔排布，复合膜条在光伏电池层的表面沿第一方向延伸并沿第二方向间隔排布，第一方向为互联主栅线的延伸方向，第二方向为与互联主栅线 的延伸方向垂直的方向，复合膜条的宽度大于互联主栅线的宽度，光伏电池表面的每根互联主栅线都通过一条复合膜条进行整根完全固定。
更进一步限定，复合膜条以光伏电池层为最小覆盖单元，光伏电池层由至少一个光伏电池串电连接而成，光伏电池串内的光伏电池通过互联主栅线进行电连接，光伏电池串在光伏电池层中沿第一方向延伸并沿第二方向间隔排布，复合膜条在光伏电池层的表面沿第二方向延伸并沿第一方向间隔排布，第一方向为互联主栅线的延伸方向，第二方向为与互联主栅线的延伸方向垂直的方向，光伏电池表面的每根互联主栅线都通过多条与其相交的复合膜条进行多点固定，固定点为互联主栅线与复合膜条的相交点。
本发明的有益效果是：本发明相比通过焊盘对互联主栅线进行机械固定的无主栅光伏电池电连接方案，可大幅降低互联主栅线连接点Ag耗；相比胶膜电极无主栅光伏电池电连接方案，本发明制造方便，成本更低。
附图说明
下面结合附图和实施例对本发明进一步说明；
图1是本发明的实施例1的光伏电池组件的制造流程图；
图2是本发明的实施例1的光伏电池组件的结构示意图；
图3是本发明的实施例1的复合膜的结构示意图；
图4是本发明的实施例1的互联主栅线通过连接点与无主栅光伏电池进行初步连接的结构示意图；
图5是本发明的实施例1的互联主栅线通过连接点与无主栅光伏电池进行初步连接的另一种结构示意图；
图6是现有技术中互联主栅线通过电池主栅焊盘与光伏电池进行固定的结构示意图；
图7是本发明的实施例2的光伏电池组件的结构示意图；
图8是本发明的实施例2的复合膜的结构示意图；
图9是本发明的实施例4的光伏电池组件的结构示意图；
图10是本发明的实施例5的互联主栅线通过复合膜条进行固定的立体状态结构示意图；
图11是本发明的实施例5的互联主栅线通过复合膜条进行固定的侧面状态结构示意图；
图12是现有技术中光伏电池通过带多主栅焊带的胶膜电极进行串联的结构示意图；
图13是本发明的实施例6的互联主栅线通过复合膜条进行固定的立体状态结构示意图；
图14是本发明的实施例6的互联主栅线通过复合膜条进行固定的侧面状态结构示意图；
图15是本发明的实施例7的互联主栅线通过复合膜进行固定的立体状态结构示意图；
图16是本发明的实施例7的互联主栅线通过复合膜进行固定的侧面状态结构示意图；
图17是本发明的实施例13的固定互联主栅线的第一种未经层压的层叠结构示意图；
图18是本发明的实施例13的固定互联主栅线的第二种未经层压的层叠结构示意图；
图19是本发明的实施例13的固定互联主栅线的第三种未经层压的层叠结构示意图；
图20是本发明的实施例14的固定互联主栅线的未经层压的层叠结构示意图；
图中，1.光伏电池，2.互联主栅线，3.复合膜，3’.复合膜条，3-1.栅线粘结层，3-2.栅线支撑层，3-3.封装粘结层，4.连接点，5.封装面板，6.封装背板，7.带多主栅焊带的胶膜电极。
具体实施方式
实施例1，一种光伏电池组件的制造方法，首先进行组件的光伏电池层内的光伏电池串的制备，使光伏电池串的互联主栅线2通过连接点4初步固定在光伏电池1的表面，然后，在组件的光伏电池1表面的互联主栅线2上覆盖栅线粘结层3-1和栅线支撑层3-2，栅线粘结层3-1位于栅线支撑层3-2和光伏电池层之间，最后通过组件层压工艺，将光伏电池1封装在光伏组件的封装结构内，并将互联主栅线2通过栅线粘结层3-1和栅线支撑层3-2完全固定在光伏电池1的表面。
具体地，栅线粘结层3-1的厚度小于互联主栅线2的厚度，通过组件层压工艺使栅线粘结层3-1受热流动，互联主栅线2嵌入栅线粘结层3-1，栅线支撑层3-2通过栅线粘结层3-1粘结在光伏电池1表面，并且栅线支撑层3-2压在互联主栅线2上，实现互联主栅线2通过 栅线粘结层3-1和栅线支撑层3-2完全固定在光伏电池的表面。互联主栅线2的表面具有低熔点焊接层，在层压温度下熔化，与光伏电池1的表面形成电接触。
栅线粘结层3-1和栅线支撑层3-2以含有栅线粘结层3-1和栅线支撑层3-2的复合膜3的形式进行覆盖。如图3所示，复合膜3为三层复合结构，包括封装粘结层3-3、栅线支撑层3-2和栅线粘结层3-1，封装粘结层3-3用于将栅线支撑层3-2与同侧的封装结构粘结在一起，封装粘结层3-3和栅线粘结层3-1位于栅线支撑层3-2的正反两面。
封装粘结层3-3、栅线支撑层3-2和栅线粘结层3-1为三层不同的材料复合而成，也可为同一种材料，通过不同处理，产生不同的聚合和/或交联程度，得到三层复合结构。
如图2、3和4所示，通过本实施例1的光伏电池组件的制造方法制得的光伏电池组件，包括封装在封装结构内的光伏电池层，光伏电池层内的光伏电池1通过互联主栅线2导出电流，光伏电池1和互联主栅线2之间具有导电的连接点4，用于互联主栅线2和光伏电池1的初步固定，光伏电池表面的互联主栅线上覆盖栅线粘结层3-1和栅线支撑层3-2，用于将互联主栅线2完全固定在光伏电池1表面，互联主栅线2的表面具有低熔点焊接层，互联主栅线2通过低熔点焊接层与光伏电池1的表面形成电接触，栅线支撑层3-2通过栅线粘结层3-1粘结在光伏电池1表面，互联主栅线2嵌入栅线粘结层3-1，栅线支撑层3-2压在互联主栅线2上，栅线支撑层3-2与同侧的封装结构之间具有封装粘结层3-3，用于将栅线支撑层3-2与同侧的封装结构粘结在一起。
光伏电池层由至少一个光伏电池串电连接而成，光伏电池串内的光伏电池1通过互联主栅线2进行电连接，光伏电池串在光伏电池层中沿第一方向延伸并沿第二方向间隔排布。
复合膜3以整个光伏电池层为最小覆盖单元覆盖在光伏电池层的整个表面。
栅线支撑层3-2为在层压温度下不易流动的高分子材料，如PET、PVF、PMMA或PC等，其厚度约为5um～50um，栅线支撑层3-2可做表面处理以增强膜层间的粘结；栅线粘结层3-1为在层压温度下易于流动的高分子粘胶材料，如硅胶、POE、EVA、TPU或其他热黏胶等，其厚度为20um～150um；封装粘结层3-3为在层压温度下易于流动的高分子粘胶材料，如EVA、POE、PVB或TPO等常用膜层，其厚度约为200um～600um；光伏电池1为无主栅光伏电池，互联主栅线2为多主栅焊带。
如图1所示，本实施例1的光伏电池组件的制造方法的具体步骤如下：
(a)提前制备好互联主栅线2、光伏电池1和复合膜3，互联主栅线2为高纯、低膨胀系数的、以无氧铜为金属芯的低熔点焊接层的多主栅焊带，低熔点焊接层为掺有Bi、Ag等元素以降低熔点的锡层，如Sn42Bi57Ag1，光伏电池1为无主栅光伏电池，无主栅光伏电池上具有多个焊盘，用于多主栅焊带与无主栅光伏电池的连接。
(b)光伏电池串的制备：
将光伏电池1放置到焊接台上,对光伏电池1进行排版，对焊盘处进行局部能量处理，如局部的红外辐照加热，局部的电磁感应加热，将互联主栅线2焊接在焊盘上，形成多个连接点4，用于将互联主栅线2初步固定在光伏电池1上，光伏电池1通过互联主栅线2串联为光伏电池串。
如图6所示，现有无主栅光伏电池电连接技术中，表面具有18根互联主栅线2的光伏电池1通常需要通过180个连接点4才能满足互联主栅线2与光伏电池1之间具有可靠机械固定的技术要求。
而在本发明中，如图4所示，光伏电池1通过36个连接点4与互联主栅线2连接，制备得到本实施例1所需的光伏电池串，在图5中，光伏电池1通过54个连接点4与互联主栅线2连接，制备得到本实施例1所需的光伏电池串。所需的连接点4的数量大大小于现有的通过焊盘焊接互联主栅线2的无主栅光伏电池电连接技术中对连接点4的数量需求，可节省焊盘Ag浆消耗。
(c)组件排版：
依次铺设封装背板6、复合膜3、光伏电池串、复合膜3、封装面板5，得到进行组件层压的层压件。封装背板6和封装面板5为组件的封装结构。
因为该实施例1的复合膜3为封装粘结层3-3、栅线支撑层3-2和栅线粘结层3-1的三层复合结构，所以可以省略封装粘结层3-3的排版步骤，简化生产流程。
(d)组件层压：
以高于互联主栅线2的低熔点焊接层的熔点的层压温度进行层压,在层压的时候，将互联主栅线2的低熔点焊接层融化，和光伏电池1的表面的Ag细栅线形成良好导电关系。如果光伏电池1是异质结电池，在层压的时候，低熔点焊接层融化，在和光伏电池1的表面的Ag细栅线形成良好导电关系的同时，还和光伏电池1的表面的2um～7um的绒面贴合，形成良好物理接触和一定的导电接触。
在层压的时候，栅线粘结层3-1受热流动，使互联主栅线2嵌入栅线粘结层3-1，栅线支撑层3-2压在互联主栅线2上，层压结束并冷却后栅线粘结层3-1和栅线支撑层3-2将互联主栅线2紧紧地压在光伏电池1的表面，限制互联主栅线2的移动，实现互联主栅线2的完全固定，帮助组件抵抗外界环境温度变化。
实施例2，一种光伏电池组件的制造方法，和实施例1相比，基本相同，区别在于：复合膜3为栅线支撑层3-2和栅线粘结层3-1的两层复合结构，如图7和8所示。
本实施例2的具体步骤中的步骤(a)、(b)、(d)与实施例1相同，区别在于步骤(c)。
步骤(c)为：依次铺设封装背板6、封装粘结层3-3、复合膜3、光伏电池串、复合膜3、封装粘结层3-3、封装面板5。
实施例3，和实施例1相比，基本相同，区别在于：光伏电池串的互联主栅线2通过非导电的连接点4初步固定在光伏电池1的表面。非导电的连接点4通常为通过粘胶粘结而成，如热熔胶、硅胶、丙烯酸胶、环氧胶等。部分粘胶需要通过局部的UV光照射固化等方式形成粘结作用。
本实施例3相比如图6所示的现有无主栅光伏电池电连接技术中，焊盘Ag浆消耗为零。
实施例4，如图9所示，一种光伏电池组件的制造方法，和实施例1相比，基本相同，区别在于：栅线粘结层3-1和栅线支撑层3-2分别以膜的形式并以整个光伏电池层为最小覆盖单元依次覆盖在光伏电池层的整个表面。
本实施例2的具体步骤中的步骤(a)、(b)、(d)与实施例1相同，区别在于步骤(a)和(c)。
在步骤(a)，省略栅线粘结层3-1和栅线支撑层3-2的复合制备工序。
步骤(c)为：依次铺设封装背板6、封装粘结层3-3、栅线支撑层3-2、栅线粘结层3-1、光伏电池串、栅线粘结层3-1、栅线支撑层3-2、封装粘结层3-3、封装面板5。
实施例5，一种光伏电池组件的制造方法，和实施例1相比，基本相同，区别在于：栅线粘结层3-1和栅线支撑层3-2以含有栅线粘结层3-1和栅线支撑层3-2的复合膜条3’的形式贴覆在光伏电池串的表面。复合膜条3’为栅线支撑层3-2和栅线粘结层3-1的两层复合结构，如图8所示。复合膜条3’以光伏电池串为最小覆盖单元，复合膜条3’在光伏电池串的表面沿第一方向延伸并沿第二方向间隔排布，第一方向为互联主栅线2的延伸方向，第二方向为与互联主栅线2的延伸方向垂直的方向。
本实施例5的光伏电池组件的制造方法的具体步骤如下：
(a)提前制备好互联主栅线2、光伏电池1和复合膜条3’，光伏电池1为无主栅光伏电池，无主栅光伏电池上具有多个焊盘。
(b)光伏电池串的制备：
将光伏电池1放置到焊接台上,对光伏电池1进行排版，并将互联主栅线2焊接在焊盘上，形成多个连接点4，用于将互联主栅线2初步固定在光伏电池1上，光伏电池1通过互联主栅线2串联为光伏电池串。
如图10和11所示，复合膜条3’在光伏电池串的表面以沿第一方向延伸并沿第二方向间隔排布的方式贴覆在光伏电池串的表面。贴覆复合膜条3’的光伏电池串进入组件排版步骤进行排版。复合膜条3’通过少许加热栅线粘结层3-1的方式贴附贴覆在光伏电池串的表面。
(c)组件排版：
依次铺设封装背板6、封装粘结层3-3、贴覆复合膜条3’的光伏电池串、封装粘结层3-3、封装面板5，得到进行组件层压的层压件。
(d)组件层压：
以高于互联主栅线2的低熔点焊接层的熔点的层压温度进行层压,在层压的时候，将互联主栅线2的低熔点焊接层融化，和光伏电池1的表面的Ag细栅线形成良好导电关系。
在层压的时候，栅线粘结层3-1受热流动，使互联主栅线2嵌入栅线粘结层3-1，栅线支撑层3-2压在互联主栅线2上，层压结束并冷却后栅线粘结层3-1和栅线支撑层3-2将互联主栅线2紧紧地压在光伏电池1的表面，限制互联主栅线2的移动。
通过本实施例5的光伏电池组件的制造方法制得的光伏电池组件，包括封装在封装结构内的光伏电池层，光伏电池层内的光伏电池1通过互联主栅线2导出电流，光伏电池1和互联主栅线2之间具有导电的连接点4，用于互联主栅线2和光伏电池1的初步固定，光伏电池1表面的互联主栅线2上覆盖栅线粘结层3-1和栅线支撑层3-2，用于将互联主栅线2完全固定在光伏电池1表面，互联主栅线2的表面具有低熔点焊接层，互联主栅线2通过低熔点焊接层与光伏电池1的表面形成电接触，栅线支撑层3-2通过栅线粘结层3-1粘结在光伏电池1表面，互联主栅线2嵌入栅线粘结层3-1，栅线支撑层3-2压在互联主栅线2上，栅线支撑层3-2与同侧的封装结构之间具有封装粘结层3-3，用于将栅线支撑层3-2与同侧的封装结构粘结在一起。
光伏电池层由至少一个光伏电池串电连接而成，光伏电池串内的光伏电池1通过互联主栅线2进行电连接，光伏电池串在光伏电池层中沿第一方向延伸并沿第二方向间隔排布。
栅线粘结层3-1和栅线支撑层3-2以含有栅线粘结层3-1和栅线支撑层3-2的复合膜条3’形式间隔地覆盖在光伏电池层的表面。
因为光伏电池串在光伏电池层中沿第一方向延伸并沿第二方向间隔排布，所以复合膜条3’即可视为以光伏电池串为最小覆盖单元，也可视为以光伏电池层为最小覆盖单元，复合膜条3’在光伏电池层的表面沿第一方向延伸并沿第二方向间隔排布，复合膜条3’的宽度大于互联主栅线2的宽度。光伏电池1表面的每根互联主栅线2都通过一条复合膜条3’进行整根固定。在图10中，每根互联主栅线2都对应一条复合膜条3’，但是也不排除，多根互联主栅线2对应一条复合膜条3’。
在本实施例5中，如果互联主栅线2的宽度为0.27mm，互联主栅线2之间的间距为8.75mm，则复合膜条3’的宽度只需要为4mm左右，复合膜条3’之间的间距为4.75mm左右，复合膜条3’的用量为光伏电池层面积的45％左右。
在如图12所示的光伏电池通过带多主栅焊带的胶膜电极7进行串联的现有技术中，胶膜的用量达到光伏电池层面积的90％以上,成本较高，而且有遮光影响。
相比该现有技术，本实施例5的技术方案可以降低复合胶条3’的用量，有成本优势，而且遮光降低，功率会有提升。
实施例6，一种光伏电池组件的制造方法，和实施例5相比，基本相同，区别在于：由先至后依次包括光伏电池串的制备步骤、光伏电池串排版步骤、组件排版步骤和组件层压步骤，在光伏电池串排版步骤中，光伏电池串按照组件规格要求整版排布为光伏电池层，复合膜条3’以光伏电池层为最小覆盖单元贴覆在光伏电池层的表面，复合膜条3’在光伏电池层的表面沿第二方向延伸并沿第一方向间隔排布，贴覆复合膜条3’的光伏电池层进入组件排版步骤进行组件排版。复合膜条3’通过少许加热栅线粘结层3-1的方式进行贴覆。
本实施例6的光伏电池组件的制造方法的具体步骤如下：
(a)提前制备好互联主栅线2、光伏电池1和复合膜条3’，光伏电池1为无主栅光伏电池，无主栅光伏电池上具有多个焊盘。
(b)光伏电池串的制备：
将光伏电池1放置到焊接台上,对光伏电池1进行排版，并将互联主栅线2焊接在焊盘上，形成多个连接点4，用于将互联主栅线2初步固定在光伏电池1上，光伏电池1通过互联主栅线2串联为光伏电池串。
(c)光伏电池串排版：
光伏电池串按照组件规格要求整版排布为光伏电池层，复合膜条3’以光伏电池层为最小覆盖单元贴覆在光伏电池层的表面，复合膜条3’在光伏电池层的表面沿第二方向延伸并沿第一方向间隔排布，贴覆复合膜条3’的光伏电池层进入组件排版步骤进行组件排版。
(d)组件排版：
依次铺设封装背板6、封装粘结层3-3、贴覆复合膜条3’的光伏电池层、封装粘结层3-3、封装面板5，得到进行组件层压的层压件。
(e)组件层压：
以高于互联主栅线2的低熔点焊接层的熔点的层压温度进行层压,在层压的时候，将互联主栅线2的低熔点焊接层融化，和光伏电池1的表面的Ag细栅线形成良好导电关系。
在层压的时候，栅线粘结层3-1受热流动，使互联主栅线2嵌入栅线粘结层3-1，栅线支撑层3-2压在互联主栅线2上，层压结束并冷却后栅线粘结层3-1和栅线支撑层3-2将互联主栅线2紧紧地压在光伏电池1的表面，限制互联主栅线2的移动。
如图13和14所示，通过本实施例6的光伏电池组件的制造方法制得的光伏电池组件， 和实施例5基本相同，区别在于：复合膜条3’在光伏电池层的表面沿第二方向延伸并沿第一方向间隔排布，光伏电池1表面的每根互联主栅线2都通过多条与其相交的复合膜条3’进行多点固定，固定点为互联主栅线2与复合膜条3’的相交点。
在本实施例6中，如果互联主栅线2的宽度为0.27mm，互联主栅线2之间的间距为8.75mm，则复合膜条3’的宽度只需要为4mm左右，复合膜条3’之间的间距为8mm左右，复合膜条3’的用量为光伏电池层面积的30％左右。相比实施例5，成本和遮光更有优势。
实施例7，和实施例2相比，基本相同，区别在于：光伏电池1为无主栅IBC背结电池，互联主栅线2都位于光伏电池串的一侧，复合膜3以单个光伏电池为最小覆盖单元进行覆盖，如图15和16所示。
实施例8，和实施例7相比，基本相同，区别在于：复合膜3以整个光伏电池层为最小覆盖单元覆盖在光伏电池层的整个表面。
实施例9，和实施例4相比，基本相同，区别在于:栅线支撑层以膜的形式、栅线粘结层以液态形式依次进行覆盖。
封装粘结层3-3和栅线粘结层3-1为液态硅胶，栅线支撑层3-2为PET、PVF、PMMA或PC。
本实施例9的光伏电池组件的制造方法的具体步骤如下：
(a)提前制备好互联主栅线2和光伏电池1，光伏电池1为无主栅光伏电池，无主栅光伏电池上具有多个焊盘。
(b)光伏电池串的制备：
将光伏电池1放置到焊接台上,对光伏电池1进行排版，并将互联主栅线2焊接在焊盘上，形成多个连接点4，用于将互联主栅线2初步固定在光伏电池1上，光伏电池1通过互联主栅线2串联为光伏电池串。
(c)组件排版：
依次铺设封装背板6、涂覆液态硅胶、铺设栅线支撑层3-2、涂覆液态硅胶、铺设光伏电池串、涂覆液态硅胶、铺设栅线支撑层3-2、涂覆液态硅胶、铺设封装面板5，得到进行组件层压的层压件。
液态硅胶的涂覆方法为：以光伏电池层为最小覆盖单元，将液态硅胶的A/B组分混合后进行涂覆。
(d)组件层压：
以高于互联主栅线2的低熔点焊接层的熔点的层压温度进行层压,在层压的时候，将互联主栅线2的低熔点焊接层融化，和光伏电池1的表面的Ag细栅线形成良好导电关系。
在层压的时候，栅线支撑层3-2压在互联主栅线2上，栅线粘结层3-1受热成为固态形式，层压结束并冷却后栅线粘结层3-1和栅线支撑层3-2将互联主栅线2紧紧地压在光伏电池1的表面，限制互联主栅线2的移动。
实施例10，和实施例1相比，基本相同，区别在于：光伏电池1的电池栅线表面具有低熔点焊接层，在层压温度下熔化，用于与互联主栅线2形成良好的电接触。
具体为：互联主栅线2为具有Sn涂覆层的金属焊带，Sn涂覆层的熔点为230℃左右。光伏电池1表面电镀Cu细栅线，然后再在Cu细栅线的表面电镀SnBi合金，其熔点低于150℃。层压过程中，组件温度升高到150℃以上，Cu细栅线的表面的SnBi合金熔化，和互联主栅线2形成良好的电连接。
实施例11，和实施例1相比，基本相同，区别在于：互联主栅线2的表面具有导电胶，在层压压力下变形，用于与光伏电池1形成良好的电接触。
具体为：互联主栅线2为具有导电胶(ECA)涂覆层的金属焊带，导电胶(ECA)在层压压力下可以变形，并和光伏电池1表面的金属细栅线形成良好的电连接。金属焊带为Cu焊带，金属细栅线为Cu或Ag细栅线。
实施例12，和实施例1相比，基本相同，区别在于：栅线支撑层3-2也可以采用交联型的EVA、POE、PVB等材料，交联型的EVA、POE、PVB等材料在作为栅线支撑层3-2使用时先进行交联，交联率优选为80％～100％之间。例如：栅线支撑层3-2和栅线粘结层3-1都为EVA材料，因为EVA膜的透光率远远优于PET膜，因此不需要限定作为栅线支撑层3-2的EVA膜的厚薄。一般，栅线支撑层3-2可采用300um的交联型的EVA膜通过射线交联或加热完全交联后制得，而栅线粘结层3-1可采用50um厚度的常规EVA粘结膜。
实施例13，一种光伏电池组件，包括封装结构和封装在封装结构内的光伏电池层，光伏电池层内的光伏电池1通过互联主栅线2导出电流，光伏电池1和互联主栅线2之间具有导电或非导电连接点4，用于互联主栅线2和光伏电池1的初步固定，光伏电池1表面具有栅线粘结层3-1和栅线支撑层3-2，用于将互联主栅线2完全固定在光伏电池1表面，栅线支撑层3-2通过栅线粘结层3-1的粘结作用贴合在光伏电池1表面，栅线支撑层3-2压在互联主栅线2上。栅线粘结层3-1位于栅线支撑层3-2与光伏电池1之间，用于将栅线支撑层3-2贴合在光伏电池1表面，栅线粘结层3-1的厚度小于互联主栅线2的厚度。栅线支撑层3-2与同侧的封装结构之间具有封装粘结层3-3，用于将栅线支撑层3-2与同侧的封装结构粘结在一起。
和实施例1相比，区别在于：如图17所示，相对最小覆盖单元如光伏电池1，栅线支撑层3-2为整张膜，栅线粘结层3-1为膜条。互联主栅线2与栅线粘结层3-1之间存在间隙。 因为互联主栅线2与栅线粘结层3-1之间存在间隙，故在组件层压前，栅线粘结层3-1的厚度不排除可略大于互联主栅线2的厚度，在层压后栅线粘结层3-1受压变薄。
当然也可以是：如图18所示，栅线支撑层3-2为膜条，栅线粘结层3-1为整张膜；或者，如图19所示，栅线粘结层3-1和栅线支撑层3-2都为膜条。
实施例14，和实施例13相比，区别在于：如图20所示，栅线支撑层3-2位于栅线粘结层3-1与光伏电池1之间，栅线支撑层3-2仅在局部区域遮挡栅线粘结层3-1，栅线粘结层3-1的被栅线支撑层3-2的遮挡的遮挡区域和非遮挡区域分别与栅线支撑层3-2和光伏电池1粘结，用于将栅线支撑层3-2贴合在光伏电池1表面。
在图20中，相对最小覆盖单元如光伏电池1，栅线支撑层3-2为膜条，栅线粘结层3-1为整张膜，该栅线粘结层3-1可以就是封装粘结层3-3。光伏电池组件的结构为封装面板5、栅线粘结层3-1、栅线支撑层3-2、光伏电池层、栅线支撑层3-2、栅线粘结层3-1、封装背板6。
当然也可以是：栅线支撑层3-2和栅线粘结层3-1都为整张膜，栅线支撑层3-2上具有镂空，镂空区域的面积、形状、分布密度在保证组件封装质量和互联主栅线2可靠固定的情况下可任意设计。

Claims (18)

  1. 一种光伏电池组件，包括光伏电池层，光伏电池层内的光伏电池通过互联主栅线导出电流，其特征是：所述的光伏电池和互联主栅线之间具有导电或非导电连接点，用于互联主栅线和光伏电池的初步固定，光伏电池表面具有栅线粘结层和栅线支撑层，用于将互联主栅线完全固定在光伏电池表面，栅线支撑层通过栅线粘结层的粘结作用贴合在光伏电池表面，栅线支撑层压在互联主栅线上。
  2. 根据权利要求1所述的光伏电池组件，其特征是：所述的栅线粘结层位于栅线支撑层与光伏电池之间，用于将栅线支撑层贴合在光伏电池表面，栅线粘结层的厚度小于互联主栅线的厚度。
  3. 根据权利要求2所述的光伏电池组件，其特征是：所述的互联主栅线嵌在栅线粘结层中，或者互联主栅线与栅线粘结层之间存在间隙。
  4. 根据权利要求2所述的光伏电池组件，其特征是：还包括封装结构，光伏电池层封装在封装结构内，栅线粘结层和栅线支撑层覆盖在光伏电池表面的互联主栅线上，互联主栅线的表面具有低熔点焊接层，互联主栅线通过低熔点焊接层与光伏电池的表面形成电接触，
    互联主栅线嵌入栅线粘结层，栅线支撑层与同侧的封装结构之间具有封装粘结层，用于将栅线支撑层与同侧的封装结构粘结在一起。
  5. 根据权利要求2所述的光伏电池组件，其特征是：相对最小覆盖单元，栅线支撑层和栅线粘结层都为整张膜；或者，栅线支撑层为整张膜，栅线粘结层为膜条；或者，栅线支撑层为膜条，栅线粘结层为整张膜；或者，栅线粘结层和栅线支撑层都为膜条。
  6. 根据权利要求2所述的光伏电池组件，其特征是：所述的栅线粘结层和栅线支撑层为含有栅线粘结层和栅线支撑层的复合膜条形式，并以至少一个光伏电池为最小覆盖单元，复合膜条沿第一方向延伸并沿第二方向间隔排布；或者，所述的复合膜条沿第二方向延伸并沿第一方向间隔排布，第一方向为互联主栅线的延伸方向，第二方向为与互联主栅线的延伸方向垂直的方向。
  7. 根据权利要求1所述的光伏电池组件，其特征是：所述的栅线支撑层和栅线粘结层为高分子材料，
    栅线支撑层为PET、EVA、POE、PVB、PVF、PMMA或PC，
    栅线粘结层为硅胶、POE、EVA、TPU或液态硅胶，
    光伏电池为无主栅光伏电池，互联主栅线为多主栅焊带。
  8. 根据权利要求1所述的光伏电池组件，其特征是：所述的栅线支撑层位于栅线粘结层与光伏电池之间，栅线支撑层仅在局部区域遮挡栅线粘结层，栅线粘结层的被栅线支撑层的 遮挡的遮挡区域和非遮挡区域分别与栅线支撑层和光伏电池粘结，用于将栅线支撑层贴合在光伏电池表面。
  9. 根据权利要求8所述的光伏电池组件，其特征是：相对最小覆盖单元，栅线支撑层和栅线粘结层都为整张膜，栅线支撑层上具有镂空；或者，栅线支撑层为膜条，栅线粘结层为整张膜。
  10. 根据权利要求1所述的光伏电池组件，其特征是：所述的互联主栅线通过焊接层或导电胶与光伏电池电接触，焊接层为熔化温度小于组件层压温度的低熔点焊接层。
  11. 一种权利要求1所述的光伏电池组件的制造方法，其特征是：包括如下步骤：首先互联主栅线通过导电或非导电连接点初步固定在光伏电池的表面；然后在光伏电池表面覆盖栅线支撑层和栅线粘结层，在栅线支撑层和栅线粘结层上施加压力，将互联主栅线通过栅线支撑层完全固定在光伏电池表面。
  12. 根据权利要求11所述的光伏电池组件的制造方法，其特征是：由先至后依次具体包括光伏电池串的制备步骤和组件层压步骤，在光伏电池串的制备步骤中互联主栅线通过导电或非导电连接点初步固定在光伏电池的表面，在组件层压步骤中，在栅线支撑层和栅线粘结层上施加的层压压力，将互联主栅线通过栅线支撑层完全固定在光伏电池表面，并在组件层压步骤中，使互联主栅线与光伏电池电接触。
  13. 根据权利要求11所述的光伏电池组件的制造方法，其特征是：所述的栅线粘结层和栅线支撑层分别以膜的形式依次进行覆盖；
    或者，栅线粘结层和栅线支撑层以含有栅线粘结层和栅线支撑层的复合膜的形式进行覆盖；
    或者，栅线粘结层和栅线支撑层以含有栅线粘结层和栅线支撑层的复合膜条的形式进行覆盖；
    或者，栅线支撑层以膜的形式、栅线粘结层以液态形式依次进行覆盖。
  14. 根据权利要求11所述的光伏电池组件的制造方法，其特征是：互联主栅线与光伏电池的连接点通过焊接或粘结方式形成。
  15. 一种光伏电池组件的制造方法，其特征是：首先进行光伏电池串的制备，使光伏电池串的互联主栅线通过导电或非导电连接点初步固定在光伏电池的表面，然后，在光伏电池表面的互联主栅线上覆盖栅线粘结层和栅线支撑层，栅线粘结层位于栅线支撑层和光伏电池之间，最后通过组件层压工艺，将光伏电池封装在光伏组件的封装结构内，并将互联主栅线通过栅线粘结层和栅线支撑层完全固定在光伏电池的表面，
    栅线支撑层通过栅线粘结层粘结在光伏电池表面，栅线粘结层的厚度小于互联主栅线的厚度，通过组件层压工艺使栅线粘结层受热流动，互联主栅线嵌入栅线粘结层，栅线支撑层压在互联主栅线上，
    互联主栅线的表面具有低熔点焊接层，在层压温度下熔化，与光伏电池的表面形成电接触。
  16. 根据权利要求15所述的光伏电池组件的制造方法，其特征是：由先至后依次包括光伏电池串的制备步骤、组件排版步骤和组件层压步骤，
    栅线粘结层和栅线支撑层以光伏电池串为最小覆盖单元，并以含有栅线粘结层和栅线支撑层的复合膜条的形式贴覆在光伏电池串的表面，复合膜条在光伏电池串的表面沿第一方向延伸并沿第二方向间隔排布，第一方向为互联主栅线的延伸方向，第二方向为与互联主栅线的延伸方向垂直的方向，
    贴覆复合膜条的光伏电池串进入组件排版步骤进行排版。
  17. 根据权利要求15所述的光伏电池组件的制造方法，其特征是：由先至后依次包括光伏电池串的制备步骤、光伏电池串排版步骤、组件排版步骤和组件层压步骤，
    在光伏电池串排版步骤中，光伏电池串按照组件规格要求整版排布为光伏电池层，
    栅线粘结层和栅线支撑层以光伏电池层为最小覆盖单元，并以含有栅线粘结层和栅线支撑层的复合膜条的形式贴覆在光伏电池层的表面，复合膜条在光伏电池层的表面沿第二方向延伸并沿第一方向间隔排布，第一方向为互联主栅线的延伸方向，第二方向为与互联主栅线的延伸方向垂直的方向，
    贴覆复合膜条的光伏电池层进入组件排版步骤进行组件排版。
  18. 根据权利要求15所述的光伏电池组件的制造方法，其特征是：所述的栅线粘结层和栅线支撑层以含有栅线粘结层和栅线支撑层的复合膜的形式进行覆盖，复合膜为三层复合结构，包括封装粘结层、栅线支撑层和栅线粘结层，封装粘结层用于将栅线支撑层与同侧的封装结构粘结在一起，封装粘结层和栅线粘结层位于栅线支撑层的正反两面。
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