WO2023097487A1 - 检测芯片及其制备方法 - Google Patents

检测芯片及其制备方法 Download PDF

Info

Publication number
WO2023097487A1
WO2023097487A1 PCT/CN2021/134543 CN2021134543W WO2023097487A1 WO 2023097487 A1 WO2023097487 A1 WO 2023097487A1 CN 2021134543 W CN2021134543 W CN 2021134543W WO 2023097487 A1 WO2023097487 A1 WO 2023097487A1
Authority
WO
WIPO (PCT)
Prior art keywords
material layer
feature array
layer
feature
detection chip
Prior art date
Application number
PCT/CN2021/134543
Other languages
English (en)
French (fr)
Inventor
周藩
徐讯
倪洁蕾
沈梦哲
王文兵
Original Assignee
深圳华大生命科学研究院
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳华大生命科学研究院 filed Critical 深圳华大生命科学研究院
Priority to PCT/CN2021/134543 priority Critical patent/WO2023097487A1/zh
Publication of WO2023097487A1 publication Critical patent/WO2023097487A1/zh

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
    • C12M—APPARATUS FOR ENZYMOLOGY OR MICROBIOLOGY; APPARATUS FOR CULTURING MICROORGANISMS FOR PRODUCING BIOMASS, FOR GROWING CELLS OR FOR OBTAINING FERMENTATION OR METABOLIC PRODUCTS, i.e. BIOREACTORS OR FERMENTERS
    • C12M1/00—Apparatus for enzymology or microbiology
    • C—CHEMISTRY; METALLURGY
    • C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
    • C12M—APPARATUS FOR ENZYMOLOGY OR MICROBIOLOGY; APPARATUS FOR CULTURING MICROORGANISMS FOR PRODUCING BIOMASS, FOR GROWING CELLS OR FOR OBTAINING FERMENTATION OR METABOLIC PRODUCTS, i.e. BIOREACTORS OR FERMENTERS
    • C12M1/00—Apparatus for enzymology or microbiology
    • C12M1/16—Apparatus for enzymology or microbiology containing, or adapted to contain, solid media
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering

Definitions

  • the present application relates to the technical field of biological sample testing, in particular to a biological sample detection chip and a preparation method thereof.
  • the fluorescence signal intensity of a biological sample detection chip such as a sequencing chip is directly proportional to the laser power, the quantum yield of the fluorescent dye, and the exposure time.
  • the increase in sequencing throughput is usually achieved by reducing the exposure time, but the imaging quality must remain unchanged, that is, the intensity of the fluorescent signal must remain unchanged, so the power of the laser needs to be increased, which brings many disadvantages: First, the cost index of high-power lasers is rising; second, it is necessary to customize optical components with higher damage thresholds, which increases processing difficulty and cost; third, thermal effects will affect the imaging quality of the objective lens after reaching a certain level, resulting in a decline in sequencing accuracy; fourth, laser The background noise increases, the signal-to-noise ratio decreases, and a camera with higher quantum efficiency is required, which also increases the cost. Many unfavorable factors restrict the improvement of sequencing system throughput and the reduction of hardware costs, so it is necessary to find breakthrough methods from other perspectives.
  • the basic structure of the sequencing chip is shown in Figure 2.
  • the substrate is silicon (Si), and DNA (deoxyribonucleic acid) is connected to the SiO 2 layer.
  • DNA deoxyribonucleic acid
  • the laser irradiates the sequencing chip, a part of the laser light penetrates the DNA and irradiates the substrate, and only a part will be reflected back and irradiate the DNA again. Therefore, the laser power absorbed by the fluorescent dye on the DNA is actually less than the incident laser power.
  • Some sequencing chips use glass substrates, which have a high transmittance. The light passing through the DNA will basically not be reflected back again, and the laser power utilization rate is lower.
  • sequencing technology the cost of sequencing has been continuously reduced, so it is necessary to increase the throughput of sequencing and reduce the cost of hardware.
  • increasing sequencing throughput and reducing hardware costs are incompatible. Improving sequencing throughput means requiring higher power lasers, optical components with higher loss thresholds, and more sensitive detectors.
  • the hardware cost index Increase.
  • the main purpose of the present application is to provide a sequencing chip and its preparation method to improve the above-mentioned defects in the prior art.
  • a detection chip including:
  • a feature array including a number of feature units distributed on the base material layer
  • a feature array protection structure is formed on the base material layer, and the feature array is distributed in the feature array protection structure, wherein the feature array protection structure includes at least an adsorption material for adsorbing biological samples.
  • the several feature units are regularly distributed on the base material layer.
  • the several characteristic units are periodically and regularly distributed on the base material layer.
  • the detection chip further includes a sidewall material layer formed on the feature array protection structure
  • the sidewall material layer includes several sidewall materials, the sample holes formed on the feature array protection structure by adjacent sidewall materials and the position of the feature unit along the extending direction of the feature unit In one-to-one correspondence, the sample holes are used to accommodate the biological samples.
  • the characteristic array protection structure includes a characteristic array protection layer and an adsorption material layer formed by the adsorption material;
  • the feature array protective layer is formed on the base material layer, the feature array is distributed in the feature array protective layer, the adsorption material layer is formed on the feature array protective layer, and the sidewall material layer formed on the adsorption material layer.
  • the feature array protection layer includes a first feature array protection layer and a second feature array protection layer
  • the feature array is distributed in the first feature array protection layer, and the second feature array protection layer is formed on the first feature array protection layer and contacts the lower surface of the adsorption material layer.
  • the thickness of the characteristic array protective layer is in the range of 5 nm to 200 nm; and/or,
  • the thickness of the adsorption material layer ranges from 5 nm to 200 nm; and/or,
  • the thickness of the sidewall material layer is in the range of 10 nm to 1000 nm.
  • the material of the feature array protection layer includes any one or more of SiO 2 (silicon dioxide), Si 3 N 4 (silicon nitride), TiO 2 (titanium dioxide); and/or ,
  • the material of the sidewall material layer includes any one or more of SiO 2 and Si 3 N 4 .
  • the characteristic array protection structure includes an adsorption material layer formed by the adsorption material
  • the adsorption material layer is formed on the base material layer, the feature array is distributed in the adsorption material layer, and the side wall material layer is formed on the adsorption material layer.
  • the adsorption material layer includes a first adsorption material layer and a second adsorption material layer;
  • the feature array is distributed in the first adsorption material layer, and the second adsorption material layer is formed on the first adsorption material layer and contacts the lower surface of the sidewall material layer.
  • the characteristic array protection structure includes a characteristic array protection layer and a sample adsorption layer formed by the adsorption material
  • the feature array protective layer is formed on the base material layer, the feature array is distributed in the feature array protective layer, and the sample adsorption layer is formed on the feature array protective layer;
  • the sample adsorption layer includes several passivation regions and several amination regions, the amination regions correspond to the positions of the characteristic units along the extending direction of the characteristic units one by one, and the amino The VL area is used to adsorb the biological sample.
  • the feature array protection layer includes a first feature array protection layer and a second feature array protection layer
  • the feature array is distributed in the first feature array protective layer, and the second feature array protective layer is formed on the first feature array protective layer and contacts the lower surface of the sample adsorption layer.
  • the material of the base material layer includes any one or more of silicon, quartz or glass.
  • the adsorption material includes any one or more of TiN (titanium nitride), TiO 2 , Ag (silver), ZrO 2 (zirconium dioxide), and ZnO (zinc oxide).
  • the feature array includes a metal array
  • the feature unit includes a metal material
  • the metal material includes any one or more of Ag, Au (gold), Cu (copper), and Al (aluminum).
  • the characteristic units are periodically distributed on the base material layer in any one or more manners of polygon, circle, and ellipse; and/or,
  • the structure of the characteristic unit comprises a cylinder or a sphere; and/or,
  • the cross-sectional shape of the characteristic unit includes polygon, circle or ellipse.
  • the thickness of the characteristic unit ranges from 20 nm to 300 nm; and/or,
  • the cross-sectional size of the characteristic unit ranges from 20nm to 300nm; and/or,
  • the distance between the centers of two adjacent characteristic units is in the range of 100nm-1000nm.
  • the top surface of the feature array protection structure is higher than the top surface of any of the feature units.
  • a method for preparing a detection chip is provided, through which the above-mentioned detection chip is prepared;
  • Described preparation method comprises:
  • the feature array including several feature units distributed on the base material layer;
  • a feature array protection structure is formed on the base material layer so that the feature array is distributed in the feature array protection structure, wherein the feature array protection structure includes at least an adsorption material for adsorbing biological samples.
  • This application provides a new type of biological sample detection chip based on local surface plasmon enhancement and its preparation method.
  • the excitation power is at least 6 to 10 orders of magnitude higher than the incident laser power.
  • the improvement of the process can further increase the enhancement ratio, so that the excitation power received by the fluorescent dye can be increased without changing the laser power, and a stronger fluorescence signal intensity can be generated. Therefore, the image quality and laser power can be kept unchanged. Under this condition, the exposure time is effectively reduced and the sequencing throughput is improved.
  • FIG. 1 is a partial structural schematic diagram of a detection chip according to an embodiment of the present application.
  • Fig. 2 is a schematic diagram of the basic structure of an existing sequencing chip.
  • FIG. 3 is a partial structural diagram of a detection chip with a first structure according to an embodiment of the present application.
  • Fig. 4 is a schematic diagram showing a three-dimensional structure of a cylindrical characteristic unit.
  • FIG. 5 is a schematic diagram showing a three-dimensional structure of a triangular column-shaped characteristic unit.
  • FIG. 6 is a schematic diagram showing a three-dimensional structure of a cube-shaped characteristic unit.
  • FIG. 7 is a schematic diagram showing a three-dimensional structure of a spherical characteristic unit.
  • Fig. 8 is a structural schematic diagram showing the periodic distribution of quadrilaterals of cylindrical characteristic units.
  • FIG. 9 is a schematic structural diagram of the minimum periodic unit of the feature array in FIG. 8 .
  • Fig. 10 is a structural schematic diagram showing the periodic distribution of hexagonal cylindrical characteristic units.
  • FIG. 11 is a schematic structural diagram of the minimum periodic unit of the feature array in FIG. 10 .
  • Fig. 12 is a structural schematic diagram showing a circular periodic distribution of cylindrical characteristic units.
  • FIG. 13 is a schematic structural diagram of the minimum periodic unit of the feature array in FIG. 12 .
  • FIG. 14 is a schematic diagram showing the electric field distribution formed on the surface of the feature array.
  • Fig. 15 is a schematic diagram showing the electric field distribution formed between two cylindrical characteristic units.
  • FIG. 16 is a schematic diagram showing an optical path of an imaging device of a detection chip according to an embodiment of the present application.
  • FIG. 17 is a partial structural diagram of a detection chip with a second structure according to an embodiment of the present application.
  • FIG. 18 is a partial structural diagram of a detection chip with a third structure according to an embodiment of the present application.
  • Fig. 19 is a schematic flowchart of a method for manufacturing a detection chip according to another embodiment of the present application.
  • FIG. 20 is a schematic diagram of a processing process of a method for manufacturing a detection chip according to another embodiment of the present application.
  • references in the specification to "an embodiment,” “an alternative embodiment,” “another embodiment,” etc. indicate that the described embodiments may include a particular feature, structure, or characteristic, but each embodiment The specific feature, structure or characteristic may not necessarily be included. Moreover, such phrases are not necessarily referring to the same embodiment. Furthermore, when a particular feature, structure or characteristic is described in conjunction with an embodiment, it is within the purview of those skilled in the relevant arts to implement such feature, structure or characteristic in conjunction with other embodiments, whether or not explicitly described.
  • first and second are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, a feature defined as “first” and “second” may explicitly or implicitly include one or more of these features.
  • plural means two or more.
  • the term “comprise” and any variations thereof, are intended to cover a non-exclusive inclusion.
  • connection should be understood in a broad sense, for example, it can be a fixed connection or a flexible connection.
  • Detachable connection, or integral connection it can be mechanical connection or electrical connection; it can be direct connection or indirect connection through an intermediary, and it can be the internal communication of two components.
  • the present embodiment provides a detection chip, which mainly includes: a base material layer 11; a feature array 12, including several feature units 121 distributed on the base material layer 11; and The characteristic array protection structure 13 is formed on the base material layer 11, and the characteristic array 12 is distributed in the characteristic array protection structure 13, wherein the characteristic array protection structure 13 includes at least an adsorption material 1311 for adsorbing biological samples.
  • the detection chip is preferably a sequencing chip, but it is not limited to a sequencing chip, and can also be other biological or chemical detection chips, which can be adjusted or selected according to actual needs or possible needs.
  • the detection chip can also be used in various other fields such as protein analysis, single-cell analysis, and drug screening. On the basis of realizing the above-mentioned functions, it can also be combined with actual needs or possible needs. Adjust or select accordingly.
  • the biological sample can be, for example, DNA beads, quantum dots, fluorescent nanospheres, etc. in the sequencer.
  • this embodiment does not specifically limit the type of samples, and corresponding settings and adjustments can be made according to actual needs, actual scenarios, or possible needs and scenarios.
  • the top surface of the feature array protection structure 13 is at least higher than the top surface of any feature unit 121 , so that the feature array protection structure 13 can effectively protect each feature unit 121 .
  • a new biological sample detection chip based on local surface plasmon enhancement is provided.
  • the excitation power after the detection chip enhancement is at least 6 to 10 orders of magnitude higher than the incident laser power.
  • the surface of the detection chip uses a nano-feature array structure, and a local surface plasmon effect is generated when the laser light is incident to obtain an excitation power enhancement effect.
  • FIG. 16 shows a schematic diagram of the optical path when the imaging device of the detection chip emits laser light.
  • the laser 21 becomes parallel light through the collimator lens 22 and irradiates on the excitation filter 23, and the filtered laser light is irradiated on the dichroic mirror 24, and then the laser light is reflected to the rear end surface of the objective lens 25, and passes through the objective lens 25
  • the chromatic mirror 24 irradiates onto the emission filter 27 and is finally focused onto the detector 29 by the lens 28 to obtain a sequencing image.
  • the local surface plasmon enhancement means that when the laser is irradiated on the nano-characteristic unit, when the laser frequency is the same as the vibration frequency of the nano-characteristic unit, the nano-characteristic unit will have a strong absorption effect on the light, and local surface plasmons will occur.
  • the plasmon resonance phenomenon forms an electric field distribution on the surface of the nano-feature unit, as shown in Figure 14, the electric field intensity at the sharp corner of the nano-feature unit is 3 to 4 orders of magnitude higher than the incident light intensity.
  • the electric field strength will be enhanced to 6 to 10 orders of magnitude.
  • the resonance frequency of the nano-featured unit is closely related to the density of electrons, the effective mass of electrons, the shape and size of the charge distribution, etc. Therefore, the local surface plasmon can be adjusted by adjusting the material, size, shape, and surrounding dielectric material of the nano-featured unit.
  • Resonance effect commonly used optical simulation software FDTD (Finite Difference Time Domain, time domain finite difference method) to simulate and calculate structural parameters, and then process the corresponding detection chip, feedback to the simulation model after actual measurement, and further optimize the best structural parameters after correcting the simulation model. for maximum power boost.
  • the detection chip as the first structure mainly includes: a base material layer 11, a feature array comprising several feature units 121 regularly distributed on the base material layer 11 , a feature array protection structure and a sidewall material layer formed on the feature array protection structure.
  • the feature array protection structure includes a feature array protection layer 132 and an adsorption material layer 131 formed by an adsorption material.
  • the feature array protection layer 132 is formed on the base material layer 11.
  • the feature array is distributed in the feature array protection layer 132.
  • the adsorption material layer 131 is formed on the feature array protection layer 132 , and the sidewall material layer is formed on the adsorption material layer 131 .
  • the feature array protection layer 132 can be further divided into a first feature array protection layer and a second feature array protection layer (not specifically distinguished in the figure), and the feature arrays are distributed on the first feature array protection layer (the thickness of which can vary from (similar to the thickness of the feature unit 121 ), the second feature array protection layer is formed on the first feature array protection layer and contacts the lower surface of the adsorption material layer 131 .
  • the sidewall material layer includes several sidewall materials 14, and the sample holes 15 formed on the adsorption material layer 131 by adjacent sidewall materials 14 correspond to the positions of the characteristic units 121 along the extending direction of the characteristic units 121. Wells 15 are used to accommodate biological samples.
  • the materials of the first feature array protective layer and the second feature array protective layer may be the same or different, and the materials of the adsorption material layer 131 and the first feature array protective layer and the second feature array protective layer may be the same or different,
  • the materials of the sidewall material layer and the first feature array protection layer and the second feature array protection layer can be the same or different, so they can be selected and adjusted according to actual needs or possible needs.
  • the material of the base material layer 11 includes any one or more of silicon, quartz or glass, but is not limited thereto, and can be adjusted and selected according to actual needs or possible needs.
  • the feature unit 121 may be a metal material, that is, the feature array may be a metal array, but it is not limited thereto, and may be selected and adjusted according to actual needs or possible needs.
  • the metal material includes any one or more of Ag, Au, Cu, and Al, but is not limited thereto, and can be adjusted and selected according to actual needs or possible needs.
  • characteristic units 121 are distributed on the base material layer 11 in any one or more ways of polygon, circle, and ellipse.
  • the structure of the characteristic units 121 includes cylinders or spheres.
  • the cross-section of the characteristic units 121 The shape includes polygon, circle or ellipse, but is not limited thereto, and can be adjusted and selected according to actual needs or possible needs.
  • the feature unit can be in the shape of a cylinder; as shown in Figure 5, the feature unit can be in the shape of a triangular column; as shown in Figure 6, the feature unit can be Cubic shape; as shown in FIG. 7 , the feature unit may be in the shape of a sphere.
  • the feature array can be a quadrilateral periodic distribution; as shown in Figure 10 and Figure 11, the feature array can be a hexagonal periodic distribution; As shown in Fig. 12 and Fig. 13, the feature array can be distributed periodically in a circle.
  • the thickness and cross-sectional size (such as diameter, etc.) of the characteristic unit will affect the local surface plasmon effect and be limited by the nano-processing capability.
  • the thickness range of the characteristic unit can be 20nm ⁇ 300nm, preferably 60nm thickness;
  • the cross-sectional size of the unit can range from 20nm to 300nm, preferably 100nm cross-sectional size;
  • the period, that is, the interval between the centers of two adjacent characteristic units, can be determined according to the diffraction limit of the optical system, and the interval between the centers of two adjacent characteristic units
  • the interval range is 100nm-1000nm, preferably 700nm.
  • the material of the feature array protection layer 132 includes any one or more of SiO 2 , Si 3 N 4 , and TiO 2 , but is not limited thereto, and can be made according to actual or possible needs. Adjust and select accordingly.
  • the thickness of the characteristic array protective layer 132 is 5 nm to 200 nm, preferably 10 nm. If it is less than 5 nm, it is difficult to protect the metal, and if it is greater than 200 nm, the local surface plasmon energy is low.
  • the adsorption material includes any one or more of TiN, TiO 2 , Ag, ZrO 2 , ZnO, but is not limited thereto, and can be adjusted and adjusted according to actual needs or possible needs. choose.
  • the thickness of the adsorption material layer 131 ranges from 5nm to 200nm, preferably 10nm. If it is less than 5nm, it is difficult to achieve the metal protection effect, and if it is greater than 200nm, the local surface plasmon energy is low.
  • the material of the sidewall material layer includes any one or more of SiO 2 and Si 3 N 4 , but is not limited thereto, and can be adjusted and adjusted according to actual needs or possible needs. choose.
  • the thickness of the sidewall material layer ranges from 10 nm to 1000 nm, preferably 100 nm, and the thickness of the sidewall material layer is determined according to the size of the biological sample (eg, the diameter of the DNA nanosphere).
  • the parameters of each layer can be based on actual usage conditions (laser wavelength, incident angle, Spot uniformity, fluorescent dyes, etc.) are simulated and confirmed by the optical simulation software FDTD, and fed back to the simulation software according to the actual test results of the processed detection chip, and the optimal detection chip parameters are obtained after the simulation is optimized again to achieve the maximum excitation power enhancement.
  • the better detection chip obtained is as follows: 8-inch silicon-based wafer, nano-array Ag cylinder (60nm height, 130nm diameter, 700nm pitch, square periodic distribution), SiO 2 characteristic array protective layer (filling the gap of Ag cylinder and 10nm higher than the top of Ag cylinder ), TiO2 adsorption material layer (DNA samples can be adsorbed on TiO2 , thickness 10nm), SiO2 sidewall material layer (sidewall material height 100nm, distribution period is similar to characteristic array distribution period).
  • the detection chip as the second structure mainly includes: a base material layer 11, a feature array including several feature units 121 distributed on the base material layer 11, a feature array A protection structure and a sidewall material layer formed on the feature array protection structure.
  • the feature array protection structure includes an adsorption material layer 131 formed by an adsorption material, the adsorption material layer 131 is formed on the base material layer 11, the feature array is distributed in the adsorption material layer 131, and the side wall material layer is formed on the adsorption material layer 131 .
  • the adsorption material layer 131 can be further divided into a first adsorption material layer and a second adsorption material layer (not specifically distinguished in the figure), and the characteristic array is distributed in the first adsorption material layer (its thickness can be compared with that of the characteristic unit 121 within a thickness similar to ), the second adsorbent material layer is formed on the first adsorbent material layer and contacts the lower surface of the sidewall material layer.
  • the sidewall material layer includes several sidewall materials 14, and the sample holes 15 formed on the adsorption material layer 131 by adjacent sidewall materials 14 correspond to the positions of the characteristic units 121 along the extending direction of the characteristic units 121.
  • Wells 15 are used to accommodate biological samples.
  • the materials of the first adsorption material layer and the second adsorption material layer can be the same or different, and the materials of the side wall material layer and the first adsorption material layer and the second adsorption material layer can be the same or different, so all can be based on Make corresponding selections and adjustments based on actual needs or possible needs.
  • the detection chip of the second structure is similar to the detection chip of the first structure above in terms of the material, size, and distribution and shape of the feature array of each layer, so reference can be made to the detection chip of the first structure.
  • the specific parameters of the chip will not be repeated one by one.
  • the characteristic array protection layer and the adsorption material layer are combined, and only the adsorption material layer is used, so as to achieve the effect of sample adsorption and protection of the characteristic array at the same time, thereby simplifying the structure.
  • the local surface plasmon intensity is related to the distance between the feature arrays, the smaller the distance, the better the enhancement effect, so by combining the feature array protective layer and the adsorption material layer, the biological sample fluorescent dye and the feature array can be effectively reduced. the distance between.
  • the detection chip as the third structure mainly includes: a base material layer 11, a feature array and a feature array including several feature units 121 distributed on the base material layer 11. protective structure.
  • the feature array protection structure includes a feature array protection layer 132 and a sample adsorption layer formed by an adsorption material, the feature array protection layer 132 is formed on the base material layer 11, the feature arrays are distributed in the feature array protection layer 132, and the sample adsorption layer is formed on the feature array protection layer 132 .
  • the sample adsorption layer specifically includes a number of passivation regions 161 and a number of amination regions 162.
  • the amination regions 162 correspond to the positions of the characteristic units along the extending direction of the characteristic units.
  • the amination regions 162 are used to adsorb biological samples.
  • the passivation region 161 can be formed by chemical reagent-hexamethyldisilazane (HDMS) treatment, and the amination region 162 is a region formed with an amino group, which can be connected to DNA or the like through the amino group.
  • the process of forming the passivation region 161 and the process of forming the amination region 162 by disilazane-based treatment can refer to the existing treatment process, so details will not be repeated here.
  • the feature array protection layer 132 can be further divided into a first feature array protection layer and a second feature array protection layer (not specifically distinguished in the figure), and the feature arrays are distributed on the first feature array protection layer (the thickness of which can vary from (similar to the thickness of the feature unit 121 ), the second feature array protection layer is formed on the first feature array protection layer and contacts the lower surface of the adsorption material layer 131 .
  • the materials of the first feature array protection layer and the second feature array protection layer may be the same or different, so corresponding selection and adjustment may be made according to actual needs or possible needs.
  • the detection chip of the third structure is similar to the detection chip of the first structure above in terms of the material, size, and distribution and shape of the feature array of each layer, so reference can be made to the detection chip of the first structure.
  • the specific parameters of the chip will not be repeated one by one.
  • the detection chip with the third structure there is no need to form a sidewall material layer, and the biological sample can be adsorbed by using the aminated region formed on the protective layer of the characteristic array, thereby simplifying the overall structure of the detection chip.
  • the preparation process of the detection chip is effectively simplified, the preparation efficiency is improved, and the preparation cost is saved.
  • the detection chip provided in this embodiment mainly has the following beneficial effects:
  • This embodiment can reduce the cost of system hardware: using the detection chip of this embodiment, the excitation power of the fluorescent dye on the DNA is greatly enhanced through the local surface plasmon enhancement technology, thereby obtaining a higher fluorescent signal; in addition, due to The local surface plasmon energy decays exponentially with distance, and the laser background is low, which can effectively improve the signal-to-noise ratio of imaging images. Therefore, for the same imaging quality, lower power lasers, lower cost components, and lower Detectors with quantum efficiency and sensitivity can greatly reduce the hardware cost of the whole machine.
  • This embodiment can increase the sequencing throughput: for the same hardware system, since the detection chip of this embodiment can bring higher fluorescence signal and signal-to-noise ratio, the exposure time can be reduced while ensuring the same imaging quality, thereby The single run time of the sequencer is reduced, thereby increasing the sequencing throughput.
  • This embodiment can break through the bottleneck of the current sequencing throughput of traditional sequencing chips: in order to increase the sequencing throughput, sequencers using traditional sequencing chips need to continuously reduce the single run time. Common methods include reducing exposure time and motion platform movement time, Even if faster and better hardware equipment is used, there is a limit to the improvement of hardware equipment, so the improvement of sequencing throughput will encounter a bottleneck, and the new detection chip of this embodiment can break through the bottleneck of sequencing throughput of traditional sequencing chips.
  • this embodiment provides a method for preparing a detection chip as in the above embodiment, which mainly includes the following steps:
  • Step 301 providing a base material layer
  • Step 302 forming a feature array on the base material layer
  • Step 303 forming a feature array protection structure on the base material layer so that the feature arrays are distributed in the feature array protection structure.
  • a layer of ultraviolet photoresist with a thickness of 300 nm was spin-coated on an 8-inch silicon-based wafer, and then the photoresist was exposed and developed to obtain a feature array pattern.
  • a layer of metal such as Ag
  • acetone is deposited, and excess photoresist and metal are cleaned with acetone to obtain a layer of Ag cylinders as a feature array.
  • a layer of SiO 2 is evaporated by electron beam as a feature array protection layer, filling the gap of the Ag cylinder and 10nm higher than the top of the Ag cylinder, and then evaporating a layer of 10nm thick TiO 2 (as an adsorption material layer) and 100nm of SiO 2 (as a sidewall material layer), spin-coat a layer of photoresist with a thickness of 300nm, expose and develop the photoresist, and then perform dry etching on the SiO2 layer to obtain the final detection chip.
  • the above-mentioned specific processing technology and process parameters are not specifically limited, and the processing technology and process parameters can be finely adjusted according to the actual processing equipment conditions.
  • the above-mentioned detection chip can be prepared by using the preparation method of the detection chip provided in this embodiment, which has the above-mentioned beneficial effects.

Landscapes

  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Bioinformatics & Cheminformatics (AREA)
  • Zoology (AREA)
  • Biotechnology (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Sustainable Development (AREA)
  • General Engineering & Computer Science (AREA)
  • Microbiology (AREA)
  • Genetics & Genomics (AREA)
  • Biomedical Technology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)

Abstract

本申请提供一种检测芯片及其制备方法，该检测芯片包括：基底材料层；特征阵列，包括分布于基底材料层上的若干特征单元；特征阵列保护结构，形成于基底材料层上，特征阵列分布于特征阵列保护结构内，其中，特征阵列保护结构至少包括用于吸附生物样品的吸附材料。本申请经过检测芯片增强后的激发功率比入射激光功率至少提升了多个数量级，随着特征阵列设计优化及工艺改善，可以进一步提升增强比例，从而在不改变激光器功率的情况下，提升了荧光染料接收到的激发功率，产生更强的荧光信号强度，因此可以在保证成像质量和激光器功率不变的情况下，有效地降低了曝光时间，提升了测序通量。

Description

检测芯片及其制备方法 技术领域
本申请涉及生物样品测试技术领域，特别涉及一种生物样品的检测芯片及其制备方法。
背景技术
目前，生物样品检测芯片例如测序芯片的荧光信号强度跟激光功率与荧光染料量子产率、曝光时间成正比。在荧光染料型号确定的情况下，测序通量的提升通常通过减少曝光时间来实现，但成像质量需不变，即荧光信号强度需不变，因此需要提升激光器功率，从而带来诸多不利因素：一是高功率激光器成本指数上升；二是需要定制更高损伤阈值的光学元器件，加工难度和成本增加；三是热效应达到一定程度后会影响物镜成像质量，导致测序准确率下降；四是激光背景噪声增加，信噪比下降，需要使用更高量子效率的相机，成本也随之增加。诸多不利因素制约测序***通量提升和硬件成本下降，因此需要从其他角度寻找突破方法。
测序芯片基本结构如图2所示，基底为硅(Si)，DNA(脱氧核糖核酸)与SiO 2层连接。当激光照射测序芯片时，一部分激光透过DNA照射到基底上，只有一部分会被反射回来重新照射到DNA上，因此实际上被DNA上的荧光染料吸收的激光功率小于入射的激光功率。有些测序芯片使用的是玻璃基底，玻璃透过率较高，透过DNA的光基本上不会二次反射回来，激光功率利用率更低。
目前有些技术通过在基底上增加反射层镀膜，一定程度上增加激光功率利用率，但无法有效地实现激光功率的进一步增强。随着测序技术发展，测序成本不断要求降低，因此需要提升测序通量和降低硬件成本。对于传统测序芯片，提升测序通量和降低硬件成本是不可兼得的，提升测序通量意味着需要更高功率的激光器、更高损失阈值的光学元器件、更灵敏的探测器，硬件成本指数增加。
发明内容
本申请的主要目的在于，提供一种测序芯片及其制备方法，以改善现有技术中存在的上述缺陷。
本申请是通过下述技术方案来解决上述技术问题：
作为本申请的一方面，提供一种检测芯片，包括：
基底材料层；
特征阵列，包括分布于所述基底材料层上的若干特征单元；以及
特征阵列保护结构，形成于所述基底材料层上，所述特征阵列分布于所述特征阵列保护结构内，其中，所述特征阵列保护结构至少包括用于吸附生物样品的吸附材料。
作为可选实施方式，所述若干特征单元规则分布于所述基底材料层上。
作为可选实施方式，所述若干特征单元周期性规则分布于所述基底材料层上。
作为可选实施方式，所述检测芯片还包括形成于所述特征阵列保护结构上的侧壁材料层；
所述侧壁材料层包括若干侧壁材料，由相邻的所述侧壁材料形成在所述特征阵列保护结构上的样品孔与所述特征单元在沿着所述特征单元延伸方向上的位置一一对应，所述样品孔用于容纳所述生物样品。
作为可选实施方式，所述特征阵列保护结构包括特征阵列保护层及通过所述吸附材料形成的吸附材料层；
所述特征阵列保护层形成于所述基底材料层上，所述特征阵列分布于所述特征阵列保护层内，所述吸附材料层形成于所述特征阵列保护层上，所述侧壁材料层形成于所述吸附材料层上。
作为可选实施方式，所述特征阵列保护层包括第一特征阵列保护层及第二特征阵列保护层；
所述特征阵列分布于所述第一特征阵列保护层内，所述第二特征阵列保护层形成于所述第一特征阵列保护层上且接触于所述吸附材料层的下表面。
作为可选实施方式，所述特征阵列保护层的厚度范围为5nm～200nm；和/或，
所述吸附材料层的厚度范围为5nm～200nm；和/或，
所述侧壁材料层的厚度范围为10nm～1000nm。
作为可选实施方式，所述特征阵列保护层的材料包括SiO 2(二氧化硅)、Si 3N 4(氮化硅)、TiO 2(二氧化钛)中的任意一种或多种；和/或，
所述侧壁材料层的材料包括SiO 2、Si 3N 4中的任意一种或多种。
作为可选实施方式，所述特征阵列保护结构包括通过所述吸附材料形成的吸附材料层；
所述吸附材料层形成于所述基底材料层上，所述特征阵列分布于所述吸附材料层内，所述侧壁材料层形成于所述吸附材料层上。
作为可选实施方式，所述吸附材料层包括第一吸附材料层及第二吸附材料层；
所述特征阵列分布于所述第一吸附材料层内，所述第二吸附材料层形成于所述第一吸附材料层上且接触于所述侧壁材料层的下表面。
作为可选实施方式，所述特征阵列保护结构包括特征阵列保护层及通过所述吸附材料形成的样品吸附层；
所述特征阵列保护层形成于所述基底材料层上，所述特征阵列分布于所述特征阵列保护层内，所述样品吸附层形成于所述特征阵列保护层上；
其中，所述样品吸附层包括若干钝化区域及若干氨基化(amination)区域，所述氨基化区域与所述特征单元在沿着所述特征单元延伸方向上的位置一一对应，所述氨基化区域用于吸附所述生物样品。
作为可选实施方式，所述特征阵列保护层包括第一特征阵列保护层及第二特征阵列保护层；
所述特征阵列分布于所述第一特征阵列保护层内，所述第二特征阵列保护层形成于所述第一特征阵列保护层上且接触于所述样品吸附层的下表面。
作为可选实施方式，所述基底材料层的材料包括硅、石英或玻璃中的任意一种或多种。
作为可选实施方式，所述吸附材料包括TiN(氮化钛)、TiO 2、Ag(银)、ZrO 2(二氧化锆)、ZnO(氧化锌)中的任意一种或多种。
作为可选实施方式，所述特征阵列包括金属阵列，所述特征单元包括金属材料。
作为可选实施方式，所述金属材料包括Ag、Au(金)、Cu(铜)、Al(铝)中的任意一种或多种。
作为可选实施方式，若干所述特征单元以多边形、圆形、椭圆形的任意一种或多种方式周期性分布于所述基底材料层上；和/或，
所述特征单元的结构包括柱体或球体；和/或，
所述特征单元的截面形状包括多边形、圆形或椭圆形。
作为可选实施方式，所述特征单元的厚度范围为20nm～300nm；和/或，
所述特征单元的截面尺寸范围为20nm～300nm；和/或，
相邻两个所述特征单元的中心之间的间隔范围为100nm-1000nm。
作为可选实施方式，所述特征阵列保护结构的顶表面高出任意所述特征单元的顶表面。
作为本申请的另一方面，提供一种检测芯片的制备方法，通过所述制备方法制备出如上述的检测芯片；
所述制备方法包括：
提供一基底材料层；
在所述基底材料层上形成特征阵列，所述特征阵列包括分布于所述基底材料层上的若干特征单元；
在所述基底材料层上形成特征阵列保护结构以使所述特征阵列分布于所述特征阵列保护结构内，其中，所述特征阵列保护结构至少包括用于吸附生物样品的吸附材料。
根据本申请内容，本领域技术人员可以理解本申请内容的其它方面。
本申请的积极进步效果在于：
本申请提供了基于局部表面等离子体增强的新型生物样品检测芯片及其制备方法，经过检测芯片增强后的激发功率比入射激光功率至少提升了6个～10个数量级，随着特征阵列设计优化及工艺改善，可以进一步提升增强比例，从而在不改变激光器功率的情况下，提升了荧光染料接收到的激发功率，产生更强的荧光信号强度，因此可以在保证成像质量和激光器功率不变的情况下，有效地降低了曝光时间，提升了测序通量。
附图说明
在结合以下附图阅读本申请的实施例的详细描述之后，能够更好地理解本申请的所述特征和优点。在附图中，各组件不一定是按比例绘制，并且具有类似的相关特性或特征的组件可能具有相同或相近的附图标记。
图1为根据本申请的实施例的检测芯片的部分结构示意图。
图2为现有测序芯片的基本结构示意图。
图3为根据本申请的实施例的第一种结构的检测芯片的部分结构示意图。
图4为示出圆柱体形特征单元的立体结构示意图。
图5为示出三角柱形特征单元的立体结构示意图。
图6为示出立方体形特征单元的立体结构示意图。
图7为示出球形特征单元的立体结构示意图。
图8为示出圆柱体形特征单元四边形周期性分布的结构示意图。
图9为图8中特征阵列的最小周期单元的结构示意图。
图10为示出圆柱体形特征单元六边形周期性分布的结构示意图。
图11为图10中特征阵列的最小周期单元的结构示意图。
图12为示出圆柱体形特征单元圆形周期性分布的结构示意图。
图13为图12中特征阵列的最小周期单元的结构示意图。
图14为示出特征阵列表面形成电场分布的示意图。
图15为示出两个圆柱体形特征单元之间形成的电场分布的示意图。
图16为示出根据本申请的实施例的检测芯片的成像装置的光路示意图。
图17为根据本申请的实施例的第二种结构的检测芯片的部分结构示意图。
图18为根据本申请的实施例的第三种结构的检测芯片的部分结构示意图。
图19为根据本申请的另一实施例的检测芯片的制备方法的流程示意图。
图20为根据本申请的另一实施例的检测芯片的制备方法的加工工艺示意图。
具体实施方式
下面通过实施例的方式进一步说明本申请，但并不因此将本申请限制在所述的实施例范围之中。
应当注意，在说明书中对“一实施例”、“可选实施例”、“另一实施例”等的引用指示所描述的实施例可以包括特定的特征、结构或特性，但是每个实施例可能不一定包括该特定的特征、结构或特性。而且，这样的短语不一定指代相同的实施例。此外，当结合实施例描述特定特征、结构或特性时，无论是否被明确描述，结合其它实施例来实现这样的特征、结构或特性都在相关领域的技术人员的知识范围内。
在本申请内容的描述中，需要理解的是，术语“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请内容和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请内容的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请内容的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。
在本申请内容的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本申请内容中的具体含义。
这里所使用的术语仅仅是为了描述具体实施例而不意图限制示例性实施例。除非上 下文明确地另有所指，否则这里所使用的单数形式“一个”、“一项”还意图包括复数。还应当理解的是，这里所使用的术语“包括”和/或“包含”规定所陈述的特征、整数、步骤、操作、单元和/或组件的存在，而不排除存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。
为了克服目前存在的上述缺陷，如图1所示，本实施例提供一种检测芯片，主要包括：基底材料层11；特征阵列12，包括分布于基底材料层11上的若干特征单元121；以及特征阵列保护结构13，形成于基底材料层11上，特征阵列12分布于特征阵列保护结构13内，其中，特征阵列保护结构13至少包括用于吸附生物样品的吸附材料1311。
在本实施例中，检测芯片优选为测序芯片，但并不仅限于测序芯片，还可以为其他生物或化学检测芯片，可根据实际需求或可能出现的需求进行相应的调整或选择。该检测芯片除了应用于测序领域，还可以应用于蛋白质分析、单细胞分析、药物筛选等其他不同的各个领域，在实现如上述的功能的基础上，还可结合实际需求或可能出现的需求进行相应的调整或选择。
在本实施例中，生物样品例如可以为测序仪中的DNA小球、量子点、荧光纳米小球等。当然本实施例并不具体限定样品的类型，可根据实际需求、实际场景或可能出现的需求和场景进行相应的设定及调整。
在本实施例中，特征阵列保护结构13的顶表面至少高出任意特征单元121的顶表面，以使得特征阵列保护结构13能够有效地对各个特征单元121起到保护作用。
在本实施例中，提供了基于局部表面等离子体增强的新型生物样品检测芯片，经过检测芯片增强后的激发功率比入射激光功率至少提升了6个～10个数量级，随着特征阵列设计优化及工艺改善，可以进一步提升增强比例，从而在不改变激光器功率的情况下，提升了荧光染料接收到的激发功率，产生更强的荧光信号强度，因此可以在保证成像质量和激光器功率不变的情况下，有效地降低了曝光时间，提升了测序通量。
在本实施例中，检测芯片表面使用纳米特征阵列结构，激光入射时产生局部表面等离子体效应，获得激发功率增强效果。如图16所示，图16中示出了检测芯片的成像装置发射激光时的光路示意图。具体地，激光器21经过准直透镜22变成平行光照射到激发滤光片23上，过滤后的激光照射到二向色镜24上，之后激光被反射到物镜25的后端面，经过物镜25聚集激光照明到包含本实施例提供的检测芯片的芯片组件26上，检测芯片上的纳米特征阵列产生局部表面等离子体，芯片上DNA的荧光染料，产生的荧光信号被物镜25收集后透过二向色镜24照射到发射滤光片27上，最终被透镜28聚焦到探测器29上，以得到测序图像。
其中，局部表面等离子体增强是指当激光照射到纳米特征单元上时，当激光频率与纳米特征单元的振动频率相同时，纳米特征单元会对光产生很强的吸收作用，就会发生局部表面等离子体共振现象，在纳米特征单元表面形成电场分布，如图14所示，纳米特征单元的尖角处的电场强度比入射光强增加3个～4个数量级，对于某些特殊设计的纳米特征阵列结构，比如两个圆柱体之间，如图15所示，电场强度将增强至6个～10个数量级。
纳米特征单元的共振频率与电子的密度、电子有效质量、电荷分布的形状和大小等密切相关，因此，可通过调节纳米特征单元的材料、尺寸、形状、周围介质材料等来调节局部表面等离子体共振效应，常用光学仿真软件FDTD(Finite Difference Time Domain，时域有限差分法)仿真计算结构参数，然后加工对应检测芯片，实测后反馈给仿真模型，修正仿真模型后进一步优化出最佳结构参数，以达到最大功率增强效果。
具体地，作为一可选实施例，如图3所示，作为第一种结构的检测芯片，主要包括：基底材料层11、包括规则分布于基底材料层11上的若干特征单元121的特征阵列、特征阵列保护结构及形成于特征阵列保护结构上的侧壁材料层。
其中，特征阵列保护结构包括特征阵列保护层132及通过吸附材料形成的吸附材料层131，特征阵列保护层132形成于基底材料层11上，特征阵列分布于特征阵列保护层132内，吸附材料层131形成于特征阵列保护层132上，侧壁材料层形成于吸附材料层131上。在本实施例中，特征阵列保护层132可进一步分为第一特征阵列保护层及第二特征阵列保护层(图中未具体区分)，特征阵列分布于第一特征阵列保护层(其厚度可与特征单元121的厚度相似)内，第二特征阵列保护层形成于第一特征阵列保护层上且接触于吸附材料层131的下表面。侧壁材料层包括若干侧壁材料14，由相邻的侧壁材料14形成在吸附材料层131上的样品孔15与特征单元121在沿着特征单元121延伸方向上的位置一一对应，样品孔15用于容纳生物样品。
其中，第一特征阵列保护层及第二特征阵列保护层的材料可以相同也可以不同，吸附材料层131分别与第一特征阵列保护层及第二特征阵列保护层的材料可以相同也可以不同，侧壁材料层分别与第一特征阵列保护层及第二特征阵列保护层的材料可以相同也可以不同，因此均可根据实际需求或可能出现的需求进行相应的选择及调整。
作为可选实施方式，基底材料层11的材料包括硅、石英或玻璃中的任意一种或多种，但并不仅限于此，可根据实际需求或可能出现的需求进行相应的调整及选择。
作为可选实施方式，特征单元121可以为金属材料，即特征阵列可以为金属阵列，但并不仅限于此，可根据实际需求或可能出现的需求进行相应的选择及调整。
金属材料包括Ag、Au、Cu、Al中的任意一种或多种，但并不仅限于此，可根据实际需求或可能出现的需求进行相应的调整及选择。
作为可选实施方式，若干特征单元121以多边形、圆形、椭圆形的任意一种或多种方式分布于基底材料层11上，特征单元121的结构包括柱体或球体，特征单元121的截面形状包括多边形、圆形或椭圆形，但并不仅限于此，均可根据实际需求或可能出现的需求进行相应的调整及选择。
具体地，在特征单元的结构和形状方面：如图4所示，特征单元可以为圆柱体形状；如图5所示，特征单元可以为三角柱体形状；如图6所示，特征单元可以为立方体形状；如图7所示，特征单元可以为球体形状。
作为一优选实施方式，若干特征单元121周期性规则分布于基底材料层11上。
在特征单元的周期性规则分布方面：如图8及图9所示，特征阵列可以为四边形周期性分布；如图10及图11所示，特征阵列可以为六边形周期性分布；如图12及图13所示，特征阵列可以为圆形周期性分布。
在本实施例中，特征单元的厚度和截面尺寸(例如直径等)会影响局部表面等离子体效应并受纳米加工能力限制，特征单元的厚度范围可以为20nm～300nm，较佳为60nm厚度；特征单元的截面尺寸范围可以为20nm～300nm，较佳为100nm截面尺寸；周期即相邻两个特征单元的中心之间的间隔可根据光学***衍射极限确定，相邻两个特征单元的中心之间的间隔范围为100nm-1000nm，较佳为700nm。
作为可选实施方式，特征阵列保护层132的材料包括SiO 2、Si 3N 4、TiO 2中的任意一种或多种，但并不仅限于此，均可根据实际需求或可能出现的需求进行相应的调整及选择。
在本实施例中，特征阵列保护层132的厚度范围为5nm～200nm，较佳为10nm，小于5nm则较难做到保护金属的效果，大于200nm则局部表面等离子体能量较低。
作为可选实施方式，吸附材料包括TiN、TiO 2、Ag、ZrO 2、ZnO中的任意一种或多种，但并不仅限于此，均可根据实际需求或可能出现的需求进行相应的调整及选择。
在本实施例中，吸附材料层131的厚度范围为5nm～200nm，较佳为10nm，小于5nm则较难做到保护金属的效果，大于200nm则局部表面等离子体能量较低。
作为可选实施方式，侧壁材料层的材料包括SiO 2、Si 3N 4中的任意一种或多种，但并不仅限于此，均可根据实际需求或可能出现的需求进行相应的调整及选择。
在本实施例中，侧壁材料层的厚度范围为10nm～1000nm，较佳为100nm，侧壁材料的层厚度根据生物样品的尺寸(例如，DNA纳米球的直径)来确定。
在本实施例中，各层参数(材料、厚度、直径、pitch(指相邻两个特征单元中心之间的距离)、形状、周期分布等)可根据实际使用情况(激光波长、入射角度、光斑均匀性、荧光染料等)使用光学仿真软件FDTD模拟确认，并根据加工检测芯片的实际测试结果反馈给仿真软件，再次优化仿真后得到最优检测芯片参数，以达到最大激发功率增强。
作为一具体实施方式，根据本实施例的实际使用场景(532nm&640nm激光波长、0度入射、成像区域光照均匀度大于95％、荧光染料为AF532&Cy5(荧光染料类型))，得到的较佳的检测芯片，其结构依次为：8英寸硅基晶圆、纳米阵列Ag圆柱(60nm高度，130nm直径，700nm pitch，正方形周期分布)、SiO 2特征阵列保护层(填充Ag圆柱间隙并高于Ag圆柱顶部10nm)、TiO 2吸附材料层(DNA样品可吸附在TiO 2上，厚度10nm)、SiO 2侧壁材料层(侧壁材料高度100nm，分布周期与特征阵列分布周期相似)。
作为另一可选实施例，如图17所示，作为第二种结构的检测芯片，主要包括：基底材料层11、包括分布于基底材料层11上的若干特征单元121的特征阵列、特征阵列保护结构及形成于特征阵列保护结构上的侧壁材料层。
其中，特征阵列保护结构包括通过吸附材料形成的吸附材料层131，吸附材料层131形成于基底材料层11上，特征阵列分布于吸附材料层131内，侧壁材料层形成于吸附材料层131上。
在本实施例中，吸附材料层131可进一步分为第一吸附材料层及第二吸附材料层(图中未具体区分)，特征阵列分布于第一吸附材料层(其厚度可与特征单元121的厚度相似)内，第二吸附材料层形成于第一吸附材料层上且接触于侧壁材料层的下表面。
侧壁材料层包括若干侧壁材料14，由相邻的侧壁材料14形成在吸附材料层131上的样品孔15与特征单元121在沿着特征单元121延伸方向上的位置一一对应，样品孔15用于容纳生物样品。
其中，第一吸附材料层及第二吸附材料层的材料可以相同也可以不同，侧壁材料层分别与第一吸附材料层及第二吸附材料层的材料可以相同也可以不同，因此均可根据实际需求或可能出现的需求进行相应的选择及调整。
在本实施例中，第二种结构的检测芯片在各个层的材料、尺寸以及特征阵列的分布、形状等方面，与上述第一种结构的检测芯片相似，因此可参考第一种结构的检测芯片的具体参数，故不再一一赘述。
在本实施例中，在第二种结构的检测芯片中，将特征阵列保护层和吸附材料层合并，只使用吸附材料层，从而同时达到样品吸附和保护特征阵列的效果，从而简化了结构，另外由于局部表面等离子体强度跟特征阵列之间的距离有关系，距离越小，增强效果越 好，因此通过合并特征阵列保护层和吸附材料层，可以有效地减少了生物样品荧光染料与特征阵列之间的距离。
作为另一可选实施例，如图18所示，作为第三种结构的检测芯片，主要包括：基底材料层11、包括分布于基底材料层11上的若干特征单元121的特征阵列及特征阵列保护结构。
其中，特征阵列保护结构包括特征阵列保护层132及通过吸附材料形成的样品吸附层，特征阵列保护层132形成于基底材料层11上，特征阵列分布于特征阵列保护层132内，样品吸附层形成于特征阵列保护层132上。
样品吸附层具体包括若干钝化区域161及若干氨基化区域162，氨基化区域162与特征单元在沿着特征单元延伸方向上的位置一一对应，氨基化区域162用于吸附生物样品。
作为可选实施方式，钝化区域161可通过化学试剂-六甲基二硅氮烷(HDMS)处理形成，氨基化区域162为形成有氨基的区域，能够通过氨基连接DNA等，具体进行六甲基二硅氮烷处理形成钝化区域161的工艺以及形成氨基化区域162的工艺可参考现有的处理工艺，故此处不再一一赘述。
在本实施例中，特征阵列保护层132可进一步分为第一特征阵列保护层及第二特征阵列保护层(图中未具体区分)，特征阵列分布于第一特征阵列保护层(其厚度可与特征单元121的厚度相似)内，第二特征阵列保护层形成于第一特征阵列保护层上且接触于吸附材料层131的下表面。
其中，第一特征阵列保护层及第二特征阵列保护层的材料可以相同也可以不同，因此可根据实际需求或可能出现的需求进行相应的选择及调整。
在本实施例中，第三种结构的检测芯片在各个层的材料、尺寸以及特征阵列的分布、形状等方面，与上述第一种结构的检测芯片相似，因此可参考第一种结构的检测芯片的具体参数，故不再一一赘述。
在本实施例中，在第三种结构的检测芯片中，无需形成侧壁材料层，利用形成在特征阵列保护层上的氨基化区域即可吸附生物样品，从而简化了检测芯片的整体结构，同时有效地简化了检测芯片的制备工艺流程，提升了制备效率，节省了制备成本。本实施例提供的检测芯片，主要具有以下有益效果：
1、本实施例可降低***硬件成本：使用本实施例的检测芯片，通过局部表面等离子体增强技术，使得DNA上荧光染料的激发功率极大增强，从而获得更高的荧光信号；此外，由于局部表面等离子体能量随着距离指数衰减，激光背景较低，能有效提升成像图 像的信噪比，因此对于相同的成像质量，可选用更低功率的激光器、更低成本的元器件、更低量子效率和灵敏度的探测器，整机硬件成本可大幅降低。
2、本实施例可增加测序通量：对于相同硬件***，由于本实施例的检测芯片可带来更高的荧光信号和信噪比，在保证相同成像质量情况下，可降低曝光时间，从而减少测序仪单次运行时间，进而提升了测序通量。
3、本实施例可突破目前传统测序芯片的测序通量瓶颈：为了提升测序通量，使用传统测序芯片的测序仪需要不断减少单次运行时间，常用方法包括减少曝光时间和运动平台运动时间，即使用更快更好的硬件设备，但硬件设备提升是有极限的，因此测序通量提升会遇到瓶颈，而本实施例的新型检测芯片可突破传统测序芯片的测序通量瓶颈。
作为另一实施例，如图19所示，本实施例提供一种如上述实施例的检测芯片的制备方法，主要包括以下步骤：
步骤301、提供基底材料层；
步骤302、在基底材料层上形成特征阵列；
步骤303、在基底材料层上形成特征阵列保护结构以使特征阵列分布于特征阵列保护结构内。
具体地，作为一具体实施方式，如图20所示，在8英寸硅基晶圆上旋涂一层300nm厚度的紫外光刻胶，然后对光刻胶进行曝光和显影，得到特征阵列图案。接下来沉积一层金属(例如可以为Ag)，用丙酮清洗多余的光刻胶和金属，以得到作为特征阵列的Ag圆柱层。之后通过电子束蒸镀一层SiO 2层作为特征阵列保护层，填充Ag圆柱间隙并高于Ag圆柱顶部10nm，再蒸镀一层10nm厚度的TiO 2(作为吸附材料层)和100nm的SiO 2(作为侧壁材料层)，旋涂一层300nm厚度的光刻胶，对光刻胶曝光显影，再对SiO 2层进行干法刻蚀，以得到最终的检测芯片。
在本实施例中，并不具体限定上述具体加工工艺及工艺参数，可根据实际加工设备情况，对加工工艺及工艺参数进行细微调节。
利用本实施例提供的检测芯片的制备方法可制备出如上述的检测芯片，其具有如上述的有益效果。
虽然以上描述了本申请的具体实施方式，但是本领域的技术人员应当理解，这仅是举例说明，本申请的保护范围是由所附权利要求书限定的。本领域的技术人员在不背离本申请的原理和实质的前提下，可以对这些实施方式做出多种变更或修改，但这些变更和修改均落入本申请的保护范围。

Claims (20)

  1. 一种检测芯片，其特征在于，包括：
    基底材料层；
    特征阵列，包括分布于所述基底材料层上的若干特征单元；以及
    特征阵列保护结构，形成于所述基底材料层上，所述特征阵列分布于所述特征阵列保护结构内，其中，所述特征阵列保护结构至少包括用于吸附生物样品的吸附材料。
  2. 如权利要求1所述的检测芯片，所述若干特征单元规则分布于所述基底材料层上。
  3. 如权利要求2所述的检测芯片，所述若干特征单元周期性规则分布于所述基底材料层上。
  4. 如权利要求1所述的检测芯片，所述检测芯片还包括形成于所述特征阵列保护结构上的侧壁材料层；
    所述侧壁材料层包括若干侧壁材料，由相邻的所述侧壁材料形成在所述特征阵列保护结构上的样品孔与所述特征单元在沿着所述特征单元延伸方向上的位置一一对应，所述样品孔用于容纳所述生物样品。
  5. 如权利要求4所述的检测芯片，所述特征阵列保护结构包括特征阵列保护层及通过所述吸附材料形成的吸附材料层；
    所述特征阵列保护层形成于所述基底材料层上，所述特征阵列分布于所述特征阵列保护层内，所述吸附材料层形成于所述特征阵列保护层上，所述侧壁材料层形成于所述吸附材料层上。
  6. 如权利要求5所述的检测芯片，所述特征阵列保护层包括第一特征阵列保护层及第二特征阵列保护层；
    所述特征阵列分布于所述第一特征阵列保护层内，所述第二特征阵列保护层形成于所述第一特征阵列保护层上且接触于所述吸附材料层的下表面。
  7. 如权利要求5所述的检测芯片，所述特征阵列保护层的厚度范围为5nm～200nm；和/或，
    所述吸附材料层的厚度范围为5nm～200nm；和/或，
    所述侧壁材料层的厚度范围为10nm～1000nm。
  8. 如权利要求5所述的检测芯片，所述特征阵列保护层的材料包括SiO 2、Si 3N 4、TiO 2中的任意一种或多种；和/或，
    所述侧壁材料层的材料包括SiO 2、Si 3N 4中的任意一种或多种。
  9. 如权利要求4所述的检测芯片，所述特征阵列保护结构包括通过所述吸附材料形成的吸附材料层；
    所述吸附材料层形成于所述基底材料层上，所述特征阵列分布于所述吸附材料层内，所述侧壁材料层形成于所述吸附材料层上。
  10. 如权利要求9所述的检测芯片，所述吸附材料层包括第一吸附材料层及第二吸附材料层；
    所述特征阵列分布于所述第一吸附材料层内，所述第二吸附材料层形成于所述第一吸附材料层上且接触于所述侧壁材料层的下表面。
  11. 如权利要求1所述的检测芯片，所述特征阵列保护结构包括特征阵列保护层及通过所述吸附材料形成的样品吸附层；
    所述特征阵列保护层形成于所述基底材料层上，所述特征阵列分布于所述特征阵列保护层内，所述样品吸附层形成于所述特征阵列保护层上；
    其中，所述样品吸附层包括若干钝化区域及若干氨基化区域，所述氨基化区域与所述特征单元在沿着所述特征单元延伸方向上的位置一一对应，所述氨基化区域用于吸附所述生物样品。
  12. 如权利要求11所述的检测芯片，所述特征阵列保护层包括第一特征阵列保护层及第二特征阵列保护层；
    所述特征阵列分布于所述第一特征阵列保护层内，所述第二特征阵列保护层形成于所述第一特征阵列保护层上且接触于所述样品吸附层的下表面。
  13. 如权利要求1所述的检测芯片，所述基底材料层的材料包括硅、石英或玻璃中的任意一种或多种。
  14. 如权利要求1所述的检测芯片，所述吸附材料包括TiN、TiO 2、Ag、ZrO 2、ZnO中的任意一种或多种。
  15. 如权利要求1～14中任意一项所述的检测芯片，所述特征阵列包括金属阵列，所述特征单元包括金属材料。
  16. 如权利要求15所述的检测芯片，所述金属材料包括Ag、Au、Cu、Al中的任意一种或多种。
  17. 如权利要求1～14中任意一项所述的检测芯片，若干所述特征单元以多边形、圆形、椭圆形的任意一种或多种方式周期性分布于所述基底材料层上；和/或，
    所述特征单元的结构包括柱体或球体；和/或，
    所述特征单元的截面形状包括多边形、圆形或椭圆形。
  18. 如权利要求1～14中任意一项所述的检测芯片，所述特征单元的厚度范围为20nm～300nm；和/或，
    所述特征单元的截面尺寸范围为20nm～300nm；和/或，
    相邻两个所述特征单元的中心之间的间隔范围为100nm-1000nm。
  19. 如权利要求1～14中任意一项所述的检测芯片，所述特征阵列保护结构的顶表面高出任意所述特征单元的顶表面。
  20. 一种检测芯片的制备方法，其特征在于，通过所述制备方法制备出如权利要求1～19中任意一项所述的检测芯片；
    所述制备方法包括：
    提供一基底材料层；
    在所述基底材料层上形成特征阵列，所述特征阵列包括分布于所述基底材料层上的若干特征单元；
    在所述基底材料层上形成特征阵列保护结构以使所述特征阵列分布于所述特征阵列保护结构内，其中，所述特征阵列保护结构至少包括用于吸附生物样品的吸附材料。
PCT/CN2021/134543 2021-11-30 2021-11-30 检测芯片及其制备方法 WO2023097487A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/CN2021/134543 WO2023097487A1 (zh) 2021-11-30 2021-11-30 检测芯片及其制备方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2021/134543 WO2023097487A1 (zh) 2021-11-30 2021-11-30 检测芯片及其制备方法

Publications (1)

Publication Number Publication Date
WO2023097487A1 true WO2023097487A1 (zh) 2023-06-08

Family

ID=86611310

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2021/134543 WO2023097487A1 (zh) 2021-11-30 2021-11-30 检测芯片及其制备方法

Country Status (1)

Country Link
WO (1) WO2023097487A1 (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101400976A (zh) * 2005-12-19 2009-04-01 美国光纳科技 化学检测器
CN105445250A (zh) * 2014-07-22 2016-03-30 中国科学院微电子研究所 三维微纳结构、检测装置和检测方法
CN106198459A (zh) * 2016-09-30 2016-12-07 成都海阿卡科技有限公司 基于纳米表面等离子共振传感器的生物分析传感装置
CN110160993A (zh) * 2019-05-21 2019-08-23 广州星坛电子产品有限公司 一种局域表面等离子谐振传感器及其制备方法和应用
CN113396229A (zh) * 2019-01-28 2021-09-14 深圳华大生命科学研究院 测序芯片及其制备方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101400976A (zh) * 2005-12-19 2009-04-01 美国光纳科技 化学检测器
CN105445250A (zh) * 2014-07-22 2016-03-30 中国科学院微电子研究所 三维微纳结构、检测装置和检测方法
CN106198459A (zh) * 2016-09-30 2016-12-07 成都海阿卡科技有限公司 基于纳米表面等离子共振传感器的生物分析传感装置
CN113396229A (zh) * 2019-01-28 2021-09-14 深圳华大生命科学研究院 测序芯片及其制备方法
CN110160993A (zh) * 2019-05-21 2019-08-23 广州星坛电子产品有限公司 一种局域表面等离子谐振传感器及其制备方法和应用

Similar Documents

Publication Publication Date Title
Horrer et al. Parallel fabrication of plasmonic nanocone sensing arrays
Hossain et al. Surface-enhanced Raman scattering: realization of localized surface plasmon resonance using unique substrates and methods
US8803105B2 (en) Optical field enhancement device
Zhao et al. Synergistic plasmon resonance coupling and light capture in ordered nanoarrays as ultrasensitive and reproducible SERS substrates
JP5494954B2 (ja) 分析用基板及びその製造方法
TWI531786B (zh) 拉曼檢測系統
US8835185B2 (en) Target substance-detecting element
JP2010009025A (ja) 光学フィルタ
CN106018379B (zh) 一种大面积表面增强拉曼散射基底及其制备方法
TWI500921B (zh) 光學感測晶片
JP2020519874A (ja) 表面増感ラマン分光の活用方法、目的用途、及びそのための装置
Li et al. Nanoengineered metasurface immunosensor with over 1000-fold electrochemiluminescence enhancement for ultra-sensitive bioassay
JP2016516194A (ja) 表面増強電場を用いた欠陥検出
CN108645831A (zh) 多功能表面等离子体耦合发射荧光与拉曼检测仪及其检测方法
CN105136768A (zh) 金属纳米颗粒阵列极化表面增强拉曼散射基底制备方法
JP2012198090A (ja) 光電場増強デバイスおよび該デバイスを備えた測定装置
TW202043738A (zh) 利用空間變化極化轉子及極化器之敏感性粒子偵測
Wang et al. A split-type structure of Ag nanoparticles and Al 2 O 3@ Ag@ Si nanocone arrays: an ingenious strategy for SERS-based detection
CN107966429A (zh) 一种具有表面增强拉曼散射的金纳米环堆叠阵列基底及制备方法
WO2023097487A1 (zh) 检测芯片及其制备方法
CN104634763B (zh) 一种spr传感芯片及其制备方法
KR102246480B1 (ko) 곡면을 가지는 플라즈모닉 연속 박막을 포함하는 기판 및 이의 제조방법
CN114199839B (zh) 基于纳米间隙阵列的荧光增强基底及其制备方法及其应用
Tan et al. Honeycomb meshed working electrodes based on microsphere lithography for high-resolution chemical image sensor
TWI530451B (zh) 碗狀金屬奈米結構

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21965926

Country of ref document: EP

Kind code of ref document: A1