WO2023089059A3 - Laser package and method for manufacturing a laser package - Google Patents

Laser package and method for manufacturing a laser package Download PDF

Info

Publication number
WO2023089059A3
WO2023089059A3 PCT/EP2022/082331 EP2022082331W WO2023089059A3 WO 2023089059 A3 WO2023089059 A3 WO 2023089059A3 EP 2022082331 W EP2022082331 W EP 2022082331W WO 2023089059 A3 WO2023089059 A3 WO 2023089059A3
Authority
WO
WIPO (PCT)
Prior art keywords
laser
baseplate
contact layer
laser package
laser diode
Prior art date
Application number
PCT/EP2022/082331
Other languages
French (fr)
Other versions
WO2023089059A2 (en
Inventor
Krisztian NOVAK
Original Assignee
Ams-Osram International Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ams-Osram International Gmbh filed Critical Ams-Osram International Gmbh
Publication of WO2023089059A2 publication Critical patent/WO2023089059A2/en
Publication of WO2023089059A3 publication Critical patent/WO2023089059A3/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • H01S5/02325Mechanically integrated components on mount members or optical micro-benches
    • H01S5/02326Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0225Out-coupling of light
    • H01S5/02255Out-coupling of light using beam deflecting elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0233Mounting configuration of laser chips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0233Mounting configuration of laser chips
    • H01S5/02345Wire-bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02476Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips
    • H01S5/02355Fixing laser chips on mounts
    • H01S5/0236Fixing laser chips on mounts using an adhesive
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips
    • H01S5/02355Fixing laser chips on mounts
    • H01S5/0237Fixing laser chips on mounts by soldering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02469Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042Electrical excitation ; Circuits therefor
    • H01S5/0425Electrodes, e.g. characterised by the structure
    • H01S5/04256Electrodes, e.g. characterised by the structure characterised by the configuration
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4018Lasers electrically in series
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031Edge-emitting structures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention concerns a laser package comprising a baseplate with a first contact layer and a second contact layer arranged on a top surface of the baseplate. The laser package further comprises a first laser diode, in particular high power laser diode, arranged between a first and a second thermally and electrically conductive component, the first component being arranged on the first contact layer and the second component being arranged on the second contact layer. The first laser diode is thereby configured to emit laser radiation through a laser facete arranged on a front surface of the laser diode, the front surface protruding front surfaces of the components, and the laser radiation has a beam profile which is non-rotationally symmetric having a fast axis and a slow axis perpendicular to the fast axis, the fast axis being oriented in parallel to the top surface of the baseplate and the slow axis being oriented perpendicular to the top surface of the baseplate.
PCT/EP2022/082331 2021-11-19 2022-11-17 Laser package and method for manufacturing a laser package WO2023089059A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102021130370 2021-11-19
DE102021130370.2 2021-11-19

Publications (2)

Publication Number Publication Date
WO2023089059A2 WO2023089059A2 (en) 2023-05-25
WO2023089059A3 true WO2023089059A3 (en) 2023-07-27

Family

ID=84389359

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2022/082331 WO2023089059A2 (en) 2021-11-19 2022-11-17 Laser package and method for manufacturing a laser package

Country Status (1)

Country Link
WO (1) WO2023089059A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102022119151A1 (en) * 2022-07-29 2024-02-01 Ams-Osram International Gmbh OPTOELECTRONIC MODULE AND METHOD FOR PRODUCING AN OPTOELECTRONIC MODULE

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6352873B1 (en) * 1997-10-14 2002-03-05 Decade Products, Inc. Method for modular laser diode assembly
US20070217469A1 (en) * 2006-03-20 2007-09-20 Nlight Photonics Corporation Laser diode stack side-pumped solid state laser
US20080019010A1 (en) * 2006-07-18 2008-01-24 Govorkov Sergei V High power and high brightness diode-laser array for material processing applications
US20090092162A1 (en) * 2007-09-21 2009-04-09 Huff Michael A Means for improved implementation of laser diodes and laser diode arrays
EP2477285A1 (en) * 2011-01-18 2012-07-18 Bystronic Laser AG Laser diode bar and laser system
US20160204573A1 (en) * 2013-08-21 2016-07-14 Osram Opto Semiconductors Gmbh Laser component and method of producing a laser component
US9450377B1 (en) * 2015-05-04 2016-09-20 Trumpf Photonics, Inc. Multi-emitter diode laser package
US20180062348A1 (en) * 2016-08-30 2018-03-01 Won Tae Lee High-power laser packaging utilizing carbon nanotubes
WO2021052514A1 (en) * 2019-09-20 2021-03-25 青岛海信激光显示股份有限公司 Laser

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6352873B1 (en) * 1997-10-14 2002-03-05 Decade Products, Inc. Method for modular laser diode assembly
US20070217469A1 (en) * 2006-03-20 2007-09-20 Nlight Photonics Corporation Laser diode stack side-pumped solid state laser
US20080019010A1 (en) * 2006-07-18 2008-01-24 Govorkov Sergei V High power and high brightness diode-laser array for material processing applications
US20090092162A1 (en) * 2007-09-21 2009-04-09 Huff Michael A Means for improved implementation of laser diodes and laser diode arrays
EP2477285A1 (en) * 2011-01-18 2012-07-18 Bystronic Laser AG Laser diode bar and laser system
US20160204573A1 (en) * 2013-08-21 2016-07-14 Osram Opto Semiconductors Gmbh Laser component and method of producing a laser component
US9450377B1 (en) * 2015-05-04 2016-09-20 Trumpf Photonics, Inc. Multi-emitter diode laser package
US20180062348A1 (en) * 2016-08-30 2018-03-01 Won Tae Lee High-power laser packaging utilizing carbon nanotubes
WO2021052514A1 (en) * 2019-09-20 2021-03-25 青岛海信激光显示股份有限公司 Laser

Also Published As

Publication number Publication date
WO2023089059A2 (en) 2023-05-25

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