WO2023087236A1 - 倒装发光二极管和发光装置 - Google Patents
倒装发光二极管和发光装置 Download PDFInfo
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- WO2023087236A1 WO2023087236A1 PCT/CN2021/131648 CN2021131648W WO2023087236A1 WO 2023087236 A1 WO2023087236 A1 WO 2023087236A1 CN 2021131648 W CN2021131648 W CN 2021131648W WO 2023087236 A1 WO2023087236 A1 WO 2023087236A1
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- semiconductor
- flip
- layer
- emitting diode
- light
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- 239000004065 semiconductor Substances 0.000 claims abstract description 508
- 239000010410 layer Substances 0.000 claims abstract description 368
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 239000011241 protective layer Substances 0.000 claims abstract description 46
- 229910052751 metal Inorganic materials 0.000 claims description 69
- 239000002184 metal Substances 0.000 claims description 69
- 238000003466 welding Methods 0.000 claims description 4
- 230000009471 action Effects 0.000 abstract description 4
- 239000000463 material Substances 0.000 description 27
- 238000013461 design Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- 230000000903 blocking effect Effects 0.000 description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000009172 bursting Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000001659 ion-beam spectroscopy Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910008599 TiW Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 electrodes Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000005570 vertical transmission Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Definitions
- the present application relates to the technical field related to semiconductors, in particular to a flip-chip light-emitting diode and a light-emitting device.
- flip-chip light-emitting diodes Due to the characteristics of high luminous efficiency, energy saving, environmental protection, and long life, flip-chip light-emitting diodes are widely used in various fields, such as lighting and backlighting.
- a thimble When packaging the existing flip-chip light-emitting diodes, it is necessary to use a thimble to act on a certain area on the front of the flip-chip light-emitting diode to lift it up and carry out crystal bonding.
- the active area of the thimble is usually the central area of the front of the flip-chip light-emitting diode .
- the front side of a flip-chip light-emitting diode includes an epitaxial structure, a transparent conductive layer, electrodes, and a protective layer and pads for protecting the epitaxial structure, transparent conductive layer, and electrodes.
- the protective layer is usually made of silicon oxide material, or is made of oxide A distributed Bragg reflector formed by the combination of silicon and titanium oxide.
- the thimble Due to the brittleness of the protective layer, when the thimble acts on the front of the flip-chip LED, the thimble is easy to pierce or break the protective layer, exposing the underlying epitaxial structure, transparent conductive layer or electrode, resulting in leakage failure of the flip-chip LED, and Affect the reliability of flip-chip light-emitting diodes.
- the purpose of this application is to provide a flip-chip light-emitting diode, which is provided with a semiconductor island structure spaced apart from the semiconductor light-emitting unit.
- the area where the semiconductor island structure is located is used as the active area of the thimble, which can prevent the thimble from piercing or breaking the protection of the semiconductor light-emitting unit. layer, and avoid the leakage failure phenomenon of flip-chip light-emitting diodes, and improve the reliability of flip-chip light-emitting diodes.
- the purpose of this application is to provide the first flip-chip light-emitting diode, which includes a substrate and a semiconductor stack layer on the substrate; the semiconductor stack layer includes an island structure and at least one semiconductor light-emitting unit, and the groove is located between the semiconductor light-emitting unit and the island. between structures.
- the bottom of the trench is on a partial thickness of the semiconductor stack.
- the semiconductor island structure does not emit light when the flip-chip light emitting diode is in a powered state.
- the semiconductor stack viewed from a cross-sectional view in the thickness direction of the flip-chip light emitting diode, the semiconductor stack includes a first semiconductor layer, a light emitting layer and a second semiconductor layer, and the bottom of the trench is lower than the light emitting layer.
- the bottom of the trench is on the substrate.
- the semiconductor island structure is located in the central region of the flip-chip LED.
- the width of the upper surface of the semiconductor island structure is at least 30 ⁇ m.
- the shape of the upper surface of the semiconductor island structure is circular or polygonal.
- the height of the semiconductor island structure is less than or equal to the height of the semiconductor light emitting unit.
- a metal block is further included, and the metal block is located above the semiconductor island structure.
- the metal block directly contacts the upper surface of the semiconductor island structure.
- the thickness of the metal block is between 0.5-10 ⁇ m.
- a protective layer is further included, and the protective layer covers at least the upper surface and the sidewall of the semiconductor island structure.
- the protection layer is located between the metal block and the semiconductor island structure, or the protection layer is located above the metal block.
- a first pad and a second pad are also included;
- the area covered by the protective layer also includes the upper surface and side walls of the semiconductor light emitting unit;
- the semiconductor light emitting unit includes a first semiconductor layer, an active layer and a second semiconductor layer;
- the first welding pad is located on the protective layer, and is electrically connected to the first semiconductor layer in the semiconductor light emitting unit through the protective layer
- the second welding pad is located on the protective layer, and It is electrically connected with the second semiconductor layer in the semiconductor light emitting unit through the protection layer.
- neither the first pad nor the second pad is above the metal block.
- the number of the semiconductor light emitting unit is one.
- the semiconductor light emitting unit surrounds the periphery of the semiconductor island structure.
- the number of the semiconductor light emitting units is multiple, and the multiple semiconductor light emitting units are arranged at intervals; the number of the semiconductor light emitting units is an odd number or an even number.
- the semiconductor island structure is located between adjacent semiconductor light emitting units.
- the semiconductor island structure is located between adjacent semiconductor light emitting units at the central region of the flip-chip light emitting diode.
- the adjacent semiconductor light emitting units are electrically connected.
- the width of the trench between the semiconductor island structure and the semiconductor light emitting unit increases from bottom to top.
- the present invention also provides a second flip-chip light-emitting diode, which includes:
- the first and second semiconductor light-emitting units are located on the substrate and include a semiconductor stack layer, and the semiconductor stack layer includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer;
- a groove located between the semiconductor stacked layers of the adjacent first and second semiconductor light emitting units, and the bottom of the groove is located on the substrate;
- the semiconductor stacked layer of the first semiconductor light emitting unit has a local protrusion.
- the semiconductor stacked layer of the second semiconductor light emitting unit has a local recess.
- the convex portion and the concave portion make the groove extend horizontally in a non-linear manner between adjacent semiconductor light emitting units.
- the protrusion is located at the central area of the flip-chip LED.
- the protrusions have a width of at least 30 ⁇ m.
- the protruding part and the concave part are designed in cooperation.
- the edges of the protrusions are non-linear.
- the edges of the protrusions are arc-shaped or connected by multiple line segments.
- the thickness of the protrusion is equal to the total thickness of the semiconductor stack.
- an interconnection electrode is further included, and the interconnection electrode connects the first semiconductor light emitting unit and the second semiconductor light emitting unit.
- the interconnection electrodes are located on the protrusions.
- the interconnection electrodes are located on the protrusions.
- the interconnection electrodes are not located above the protrusions.
- the present application also provides a light-emitting device, which includes the above-mentioned first or second flip-chip light-emitting diode.
- the semiconductor stack layer area where the thimble acts is reserved to form a semiconductor island structure or a convex part.
- the area where the semiconductor island structure or the convex part is located is flat as the active area of the thimble.
- Fig. 1a is a top view of a flip-chip light-emitting diode according to an embodiment of the present application
- Fig. 1b is a schematic cross-sectional view of A-A of Fig. 1a shown according to an embodiment of the present application;
- Fig. 2a is a top view of a flip-chip light-emitting diode according to an embodiment of the present application
- Fig. 2b is a schematic cross-sectional view of A-A of Fig. 2a shown according to an embodiment of the present application;
- Fig. 3 is a schematic cross-sectional view of A-A of Fig. 1 shown according to an embodiment of the present application;
- Fig. 4 is a schematic cross-sectional view of A-A of Fig. 1 shown according to an embodiment of the present application;
- Fig. 5 is a top view of a flip-chip light-emitting diode according to an embodiment of the present application.
- Fig. 6 is a schematic cross-sectional view of A-A of Fig. 5 shown according to an embodiment of the present application;
- Fig. 7 is a schematic cross-sectional view of A-A of Fig. 5 shown according to an embodiment of the present application;
- FIG. 8 is a schematic cross-sectional view of A-A of FIG. 5 shown according to an embodiment of the present application.
- Fig. 9 is a schematic cross-sectional view of B-B of Fig. 5 shown according to an embodiment of the present application.
- 10 to 12 are A-A cross-sectional schematic diagrams of a flip-chip light-emitting diode at different preparation stages according to an embodiment of the present application;
- Fig. 13 is a top view of a flip-chip light-emitting diode according to an embodiment of the present application.
- Fig. 14 is a schematic cross-sectional view of A-A of Fig. 13 according to an embodiment of the present application.
- a flip-chip light emitting diode is provided.
- Figures 1a and 2a are top views of the flip-chip light-emitting diode
- Figures 1b, 2b, and 3-4 are schematic cross-sectional views along A-A of Figures 1a and 2a.
- the flip-chip light emitting diode includes a substrate and a semiconductor stack layer on the substrate; the semiconductor stack layer includes an island structure and at least one semiconductor light emitting unit, and the groove is located between the semiconductor light emitting unit and the island structure.
- the flip-chip light emitting diode includes a substrate 100 and a semiconductor stack layer on the substrate, and the semiconductor stack layer includes a first semiconductor layer 201 , an active layer 202 and a second semiconductor layer 203 .
- the semiconductor stack layer includes an island structure 220 and a semiconductor light emitting unit 210, the semiconductor light emitting unit 210 surrounds the island structure, and the island structure is located in the central area of the flip-chip light emitting diode. There is a trench 230 between the semiconductor island structure 220 and the semiconductor light emitting unit 210 .
- the protective layer 600 covers the upper surface and sidewalls of the semiconductor light emitting unit 210 , the upper surface and sidewalls of the semiconductor island structure 220 , and the trench between the semiconductor island structure 220 and the semiconductor light emitting unit 210 .
- the front of the flip-chip LED faces the same direction as the upper surface of the substrate 100 , that is to say, a semiconductor island structure 220 is provided in the central area of the front of the flip-chip LED, and the semiconductor island structure 220 is independently provided with the semiconductor light-emitting unit 210 .
- the area where the semiconductor island structure 220 is located serves as the action area of the thimble. When the thimble acts on the above-mentioned area, the crack that the thimble pierces or breaks through the protective layer 600 is generated on the upper surface of the semiconductor island structure 220 or further extends to the surface of the semiconductor island structure 220.
- the groove between the semiconductor light emitting unit 210 and the semiconductor island structure 220 can block the transfer of cracks to the protective layer 600 in the light emitting region to a certain extent, so as to avoid flipping the light emitting diode due to cracks caused by the protective layer 600 in the light emitting region.
- the phenomenon of leakage failure caused by being punctured or broken can improve the reliability of flip-chip light-emitting diodes.
- the semiconductor light emitting unit 210 is a region for providing light, including: a first semiconductor layer 201 , an active layer 202 and a second semiconductor layer 203 . From the top view of FIG. 1 a , the semiconductor light emitting unit 210 is ring-shaped and is arranged around the periphery of the semiconductor island structure 220 .
- the central area of the flip-chip LED where the semiconductor island structure 220 is located is the central area of the flip-chip LED in a top view.
- the bottom of the trench 230 is located on a partial thickness of the semiconductor stack layer. More preferably, as shown in the cross-sectional view of FIG. 1 b , the bottom of the groove 230 is lower than the light-emitting layer 202 , thereby reducing the risk of cracks generated by the breaking of the protection layer on the island structure being transferred to the light-emitting region and affecting the electrical properties of the light-emitting region. That is, when the flip-chip LED is powered on, the semiconductor island structure 220 does not emit light.
- the bottom of the trench 230 is located on the first semiconductor layer 201 , and the island structure on the first semiconductor layer 201 may include a partial thickness of the first semiconductor layer 201 , the light emitting layer 202 and the second semiconductor stack layer 203 . That is, the semiconductor island structure is not disposed on the substrate independently of the semiconductor light emitting unit 210 , but is connected together through the first semiconductor layer 201 .
- the semiconductor island structure 220 is disposed in the central region of the flip-chip light-emitting diode, and the semiconductor island structure 220 and the semiconductor light-emitting unit 210 are located on the substrate 100 independently of each other, and both There is a trench 230 between them, and there is no semiconductor layer or conductive layer connecting the two. The bottom of the trench is on the substrate 100 . Therefore, the thickness of the groove is deeper, and the semiconductor island structure and the semiconductor light emitting unit are independent of each other, and the risk of leakage failure of the flip-chip light emitting diode due to the puncture or burst of the protective layer 600 is lower, which can further improve Reliability of flip-chip LEDs.
- the material composition of the stacked material layers of the semiconductor island structure 220 and the thickness of each layer are consistent with those of the semiconductor light emitting unit 210 .
- the thickness of the semiconductor light emitting unit 210 is 3-10 ⁇ m.
- the semiconductor light emitting unit 210 includes a first semiconductor stack layer
- the semiconductor island structure 220 includes a second semiconductor stack layer.
- the height of the semiconductor island structure 220 is less than or equal to the height of the semiconductor light emitting unit 210, and the height of the semiconductor island structure 220 is preferably less than or equal to the height of the first semiconductor stack layer.
- Both the first semiconductor stack layer and the second semiconductor stack layer include a first semiconductor layer 201 , an active layer 202 and a second semiconductor layer 203 .
- the semiconductor stack layer 200 can be obtained first on the substrate 100, and then the semiconductor stack layer 200 is etched from the surface of the semiconductor stack layer 200 to the surface of the substrate 100 through a vertical etching process to form Independent semiconductor light emitting unit 210 and semiconductor island structure 220 .
- part of the semiconductor material layer on the semiconductor island structure 220 is further etched to make the height of the semiconductor island structure 220 smaller than the height of the semiconductor light emitting unit 210 .
- the shape of the upper surface of the semiconductor island structure 220 includes, but is not limited to, circular or polygonal, and the width of the upper surface of the semiconductor island structure 220 is at least 30 ⁇ m.
- the width of the upper surface of the semiconductor island structure 220 is implemented according to the size of the current thimble , the width of the upper surface of the semiconductor island structure 220 is at least 50 ⁇ m and at most 80 ⁇ m.
- both the upper surface and the lower surface of the semiconductor island structure 220 are circular, and the diameter of the upper surface of the semiconductor island structure 220 is smaller than the diameter of the lower surface of the semiconductor island structure 220 .
- the width W1 of the trench between the semiconductor island structure 220 and the semiconductor light emitting unit 210 increases from bottom to top.
- the width W 1 of the trench at the bottom is 3 ⁇ m or more.
- the first semiconductor layer 201 is an N-type semiconductor layer
- the active layer 202 is a multi-layer quantum well layer, which can provide blue, green or red radiation, and can also provide ultraviolet or infrared radiation.
- the semiconductor layer 203 is a P-type semiconductor layer.
- the N-type semiconductor layer, the multi-layer quantum well layer, and the P-type semiconductor layer are only the basic constituent units of the first semiconductor stack layer. Functional structural layers such as undoped semiconductor layers.
- the thickness of the semiconductor stacked layer is 3-15 ⁇ m.
- Both the first pad 700 and the second pad 710 are located on the protection layer 600 , and are electrically connected to the semiconductor light emitting unit 210 through the protection layer 600 .
- the first pad 700 and the second pad 710 can be connected to the electrodes on the application substrate through a reflow soldering process or hot pressing process.
- a connection layer containing tin may be disposed on the first pad 700 or the second pad 710 , thereby avoiding the use of solder paste.
- the first pad 700 and the second pad 710 may include an adhesion layer, a reflective layer, a barrier layer, and a gold layer.
- the adhesion layer is a titanium layer or a chromium layer
- the reflective layer is an aluminum layer
- the barrier layer is a nickel layer, or a repeated stack of a nickel layer and a platinum layer.
- the barrier layer mentioned above can be used to prevent the tin-containing connection layer from penetrating into the inside of the flip-chip LED.
- the first pad 700 and the second pad 710 further include a thick tin layer on the gold layer.
- the semiconductor island structure 220 is located between the first bonding pad 700 and the second bonding pad 710 .
- the first pad 700 nor the second pad 710 is located above the semiconductor island structure 220 .
- the flip-chip light emitting diode may further include a metal block 800 , and the metal block 800 is located above the semiconductor island structure 220 .
- the metal block 800 has a certain degree of ductility, which can buffer the force of the thimble to a certain extent.
- the thickness of the metal block 800 is between 0.5-10 ⁇ m, and the thickness of the metal block 800 is preferably 1-3 ⁇ m.
- the preparation materials of the metal block 800 include but are not limited to Au, Ti, Al, Cr , Pt, TiW alloy or any combination of Ni.
- the metal block 800 directly contacts the upper surface of the semiconductor island structure 220 , and the protection layer 600 is located above the metal block 800 .
- the metal block 800 covers the upper surface of the semiconductor island structure 220 , or, the metal block 800 covers the upper surface and at least part of the sidewall of the semiconductor island structure 220 .
- the metal block 800 is located on the upper surface of the protective layer 600 and above the semiconductor island structure 220 , that is to say, the protective layer 600 is located between the metal block 800 and the semiconductor island structure 220 .
- the material and thickness of the metal block 800 are the same as those of the first pad 700 and the second pad 710, and the metal block 800 is located between the first pad 700 and the second pad 710, and is connected to the first pad 700. A certain distance is maintained between the second pad 710 and the second pad 710 .
- the width of the metal block 800 is smaller than or equal to the width of the semiconductor island structure 220 .
- the design of the semiconductor island structure 220 can prevent the protection layer 600 at the semiconductor light emitting unit 210 from cracking to a certain extent, and the metal block 800 is not necessarily provided.
- the substrate 100 is a transparent substrate, such as a sapphire substrate.
- the upper surface of the substrate 100 may be provided with a sapphire pattern, or the upper surface of the substrate 100 may be provided with a pattern of a foreign material, such as silicon oxide.
- the height of the above graphics may be 1-3 ⁇ m, and the width may be 1-4 ⁇ m.
- the substrate 100 also includes an upper surface, a lower surface and a side surface, and the light radiated by the active layer 202 can radiate light from the side surface and the upper surface of the substrate 100 .
- the thickness of the substrate 100 is preferably more than 60 ⁇ m, such as 80 ⁇ m, 120 ⁇ m, 150 ⁇ m or 250 ⁇ m.
- the first semiconductor stack layer has a mesa exposing part of the first semiconductor layer 201 , and the first electrode 500 is formed on the mesa.
- the semiconductor light emitting unit 210 further includes a transparent conductive layer 400 on the second semiconductor layer 203 , which includes but not limited to an ITO layer.
- the transparent conductive layer 400 includes an opening, and the opening exposes a portion of the second semiconductor layer 203 .
- the second electrode 510 is formed on the transparent conductive layer 400 and contacts the second semiconductor layer 203 through the opening.
- the second electrode 510 includes a block portion and at least one strip portion extending from the block portion.
- the second electrode 510 includes a block portion or a strip portion passing through the opening in the transparent conductive layer 400 and the second semiconductor layer 203. contacts to improve the adhesion of the second electrode 510 .
- the width of the opening located under the strip portion in the second electrode 510 is larger than the width of the strip portion in the second electrode 510 .
- the width of the opening below the bulk portion in the second electrode 510 is smaller than the width of the bulk portion in the second electrode 510 , so that the edge of the bulk portion is located on the upper surface of the transparent conductive layer 400 .
- the first electrode 500 and the second electrode 510 may include an adhesion layer, a reflection layer and a barrier layer, wherein the adhesion layer is a chromium layer or a titanium layer, the reflection layer is an aluminum layer, and the barrier layer is a repeated stack of titanium layers and platinum layers. .
- the protective layer 600 is respectively provided with through holes located above the first electrode 500 and the second electrode 510, and the first pad 700 and the second pad 710 are located on the protective layer 600, and are connected to the first electrode 500, The second electrode 510 is connected. Neither the first pad 700 nor the second pad 710 is above the metal block 800 .
- the protective layer 600 includes but is not limited to a distributed Bragg reflector or a single-layer insulating layer.
- the material of the protective layer 600 is SiO 2 , TiO 2 , ZnO 2 , ZrO 2 , Cu 2 O 3 and other materials. At least two of them, which are specifically distributed Bragg reflectors made by alternately stacking two materials into multiple layers using techniques such as electron beam evaporation or ion beam sputtering.
- High-voltage flip-chip light-emitting diodes as a modified design of conventional flip-chip light-emitting diodes, are divided into multiple sub-semiconductor light-emitting units with equal areas by trenches, and then the sub-semiconductor light-emitting units are electrically connected in series/parallel with each other. This design leads to grooves in the central area of the even-numbered sub-semiconductor light-emitting units.
- thimbles need to be used to act on the middle area of one side of the front electrode of the LED.
- the insulating layer is due to The unevenness is easy to be cracked by the thimble, causing water vapor to easily invade the interior of the self-luminous unit along the cracked position, and the light-emitting diode is prone to failure during aging tests or long-term use.
- the present invention designs a high-voltage flip-chip light-emitting diode with an anti-thimble structure, which can effectively solve this kind of abnormality.
- FIG. 5 is a top view of the flip-chip light-emitting diode
- FIGS. 6 to 8 are schematic cross-sectional views of A-A in FIG. 5
- FIG. 9 is a schematic cross-sectional view of B-B in FIG. 5 .
- the flip chip light emitting diode includes a substrate 100 , a plurality of semiconductor light emitting units 210 and a semiconductor island structure 220 formed on the substrate 100 .
- a plurality of semiconductor light emitting units 210 are arranged in a predetermined direction and arranged at intervals, and adjacent semiconductor light emitting units 210 are electrically connected.
- the semiconductor island structure 220 is located between the adjacent semiconductor light emitting units 210 at the central area of the flip-chip light emitting diode, and there is a groove between the adjacent semiconductor light emitting units 210, where the central area of the flip-chip light emitting diode refers to is the central area of its top view.
- the number of semiconductor light emitting units 210 is odd or even, and the number of semiconductor light emitting units 210 is preferably even.
- the protective layer 600 covers the upper surface and sidewalls of each semiconductor light emitting unit 210 , the upper surface and sidewalls of the semiconductor island structure 220 , and the trench between the semiconductor island structure 220 and the semiconductor light emitting unit 210 .
- the first pad 700 is located on the protection layer 600 and is electrically connected to the semiconductor light emitting unit 210 at the head end through the protection layer 600
- the second pad 710 is located on the protection layer 600 and passes through the protection layer 600 and the semiconductor light emitting unit 210 at the tail end. electrical connection.
- the width W1 of the trench between the semiconductor island structure 220 and its adjacent semiconductor light emitting unit 210 increases from bottom to top.
- the width W 1 of the trench at the bottom is greater than or equal to 3 ⁇ m and less than or equal to 15 ⁇ m.
- the material composition of the stacked material layers of the semiconductor island structure 220 and the thickness of each layer are consistent with the semiconductor light emitting unit 210 .
- the thickness of the semiconductor light emitting unit 210 is 3-10 ⁇ m.
- each semiconductor light emitting unit 210 includes a first semiconductor stack layer, and the semiconductor island structure 220 includes a second semiconductor stack layer.
- the height of the semiconductor island structure 220 is less than or equal to the height of the semiconductor light emitting unit 210, and the height of the semiconductor island structure 220 is preferably less than or equal to the height of the first semiconductor stack layer.
- Both the first semiconductor stack layer and the second semiconductor stack layer include a first semiconductor layer 201, an active layer 202 and a second semiconductor layer 203; the first semiconductor layer 201 is an N-type semiconductor layer, and the active layer 202 is a multilayer quantum
- the well layer can provide blue, green or red radiation, and can also provide ultraviolet or infrared radiation.
- the second semiconductor layer 203 is a P-type semiconductor layer.
- the N-type semiconductor layer, the multi-layer quantum well layer, and the P-type semiconductor layer are only the basic constituent units of the first semiconductor stack layer. Functional structural layer of the role.
- the semiconductor stack layer 200 can be obtained first on the substrate 100, and then the semiconductor stack layer 200 is etched from the surface of the semiconductor stack layer 200 to the surface of the substrate 100 through a vertical etching process, To form a plurality of semiconductor light emitting units 210 and semiconductor island structures 220 .
- part of the semiconductor material layer on the semiconductor island structure 220 is further etched to make the height of the semiconductor island structure 220 smaller than the height of the semiconductor light emitting unit 210 .
- the shape of the upper surface of the semiconductor island structure 220 includes, but is not limited to, circular or polygonal, and the width of the upper surface of the semiconductor island structure 220 is at least 30 ⁇ m.
- the width of the upper surface of the semiconductor island structure 220 is implemented according to the size of the current thimble , the width of the upper surface of the semiconductor island structure 220 is at least 40 ⁇ m or at least 50 ⁇ m, at most 80 ⁇ m.
- both the upper surface and the lower surface of the semiconductor island structure 220 are circular, and the diameter of the upper surface of the semiconductor island structure 220 is smaller than the diameter of the lower surface of the semiconductor island structure 220 .
- the flip-chip light emitting diode may further include a metal block 800 , and the metal block 800 is located above the semiconductor island structure 220 .
- the metal block 800 has a certain degree of ductility, which can buffer the force of the thimble to a certain extent.
- the thickness of the metal block 800 is between 0.5-10 ⁇ m, and the thickness of the metal block 800 is preferably 1-3 ⁇ m.
- the preparation materials of the metal block 800 include but are not limited to Au, Ti, Al, Cr, Pt, TiW alloy or any combination of Ni.
- the metal block 800 is directly in contact with the upper surface of the semiconductor island structure 220 , and the protection layer 600 is located above the metal block 800 .
- the metal block 800 covers the upper surface of the semiconductor island structure 220 , or, the metal block 800 covers the upper surface and at least part of the sidewall of the semiconductor island structure 220 .
- the metal block 800 is located on the upper surface of the protective layer 600 and above the semiconductor island structure 220 , that is to say, the protective layer 600 is located between the metal block 800 and the semiconductor island structure 220 .
- the material and thickness of the metal block 800 are the same as those of the first pad 700 and the second pad 710, and the metal block 800 is located between the first pad 700 and the second pad 710, and is connected to the first pad 700. A certain distance is maintained between the second pad 710 and the second pad 710 .
- the width of the metal block 800 is smaller than or equal to the width of the semiconductor island structure 220 .
- the design of the semiconductor island structure 220 can prevent the protection layer 600 at the semiconductor light emitting unit 210 from cracking to a certain extent, and the metal block 800 is not necessarily provided.
- the flip-chip light emitting diode further includes a current blocking layer 300, and in every two adjacent semiconductor light emitting units 210, the current blocking layer 300 starts from the first semiconductor light emitting unit 210 on the left
- the second semiconductor layer 203 extends to the first semiconductor layer 201 in the right semiconductor light emitting unit 210 .
- the material of the current blocking layer 300 may be one or more of silicon oxide, silicon nitride, silicon carbide or silicon oxynitride.
- the semiconductor light emitting unit 210 at the head end is provided with a first electrode 500 , and the first electrode 500 is electrically connected to the first semiconductor layer 201 in the semiconductor light emitting unit 210 .
- the semiconductor light emitting unit 210 at the end is provided with a second electrode 510 .
- a transparent conductive layer 400 is formed on the second semiconductor layer 203 , and the transparent conductive layer 400 includes but not limited to an indium tin oxide layer.
- the transparent conductive layer 400 includes an opening, and the opening exposes part of the second semiconductor layer 203 , and the second electrode 510 contacts the second semiconductor layer 203 through the opening.
- the second electrode 510 includes a block portion and at least one strip portion extending from the block portion.
- the second electrode 510 includes a block portion or a strip portion passing through the opening in the transparent conductive layer 400 and the second semiconductor layer 203. contacts to improve the adhesion of the second electrode 510 .
- the width of the opening located under the strip portion in the second electrode 510 is larger than the width of the strip portion in the second electrode 510 .
- the width of the opening below the bulk portion in the second electrode 510 is smaller than the width of the bulk portion in the second electrode 510 , so that the edge of the bulk portion is located on the upper surface of the transparent conductive layer 400 .
- the first semiconductor light emitting unit 210a includes the above-mentioned transparent conductive layer 400, which is transparent and conductive
- the layer 400 is located on the current blocking layer 300 above the second semiconductor layer 203 , and the interconnect electrode 520 extends from the transparent conductive layer 400 in the left semiconductor light emitting unit 210 to the first semiconductor layer 201 in the right semiconductor light emitting unit 210 .
- the first electrode 500, the second electrode 510 and the interconnection electrode 520 may include an adhesion layer, a reflection layer and a barrier layer, wherein the adhesion layer is a chromium layer or a titanium layer, the reflection layer is an aluminum layer, and the barrier layer is a titanium layer and a platinum layer Composition of repeated stacks.
- the protective layer 600 is respectively provided with through holes located above the first electrode 500 and the second electrode 510, and the first pad 700 and the second pad 710 are located on the protective layer 600, and are connected to the first electrode 500, The second electrode 510 is connected.
- the protective layer 600 includes but is not limited to a distributed Bragg reflector or a single-layer insulating layer.
- the material of the protective layer 600 is SiO 2 , TiO 2 , ZnO 2 , ZrO 2 , Cu 2 O 3 and other materials. At least two of them, which are specifically distributed Bragg reflectors made by alternately stacking two materials into multiple layers using techniques such as electron beam evaporation or ion beam sputtering.
- This design can be applied to light-emitting devices such as lighting and display, and is more suitable for small-sized light-emitting diodes with low brightness requirements but high reliability requirements.
- screen or RGB three-color base light-emitting diode display is more suitable for small-sized light-emitting diodes with low brightness requirements but high reliability requirements.
- the direct-lit backlight design is generally adopted, and a large number of densely distributed flip-chip LEDs are used to achieve regional dimming in a smaller range.
- it can achieve a smaller mixed light Achieve better brightness uniformity and higher contrast within a distance, and do not require additional lenses for secondary light distribution, thereby achieving thinner end products, high color rendering and power saving.
- the high-volume use of flip-chip LEDs requires higher transfer yields and performance stability.
- the island design of the present invention can effectively alleviate the above problems, improve the transfer yield of large batches, and ensure the performance stability of the light emitting diodes.
- the present application provides a method for preparing a flip-chip light-emitting diode, and specifically provides a method for preparing a flip-chip light-emitting diode as shown in FIG. 1 .
- the preparation method comprises the following steps:
- a substrate 100 is provided, and a semiconductor stack layer 200 is formed on the substrate 100 .
- the semiconductor stack 200 includes a first semiconductor layer 201, an active layer 202 and a second semiconductor layer 203; the first semiconductor layer 201 is an N-type semiconductor layer, the active layer 202 is a multilayer quantum well layer, and the second semiconductor layer 203 is P-type semiconductor layer.
- the substrate 100 is a patterned sapphire substrate or a flat sapphire substrate.
- the trench 230 is annular and divides the semiconductor stack layer 200 into independent semiconductor light emitting units 210 and semiconductor island structures 220.
- the light emitting unit 210 surrounds the periphery of the semiconductor island structure 220 .
- the width of the trench 230 is the width W 1 of the trench between the semiconductor island structure 220 and the semiconductor light emitting unit 210 , and W 1 increases from bottom to top.
- the shape of the upper surface of the semiconductor island structure 220 is circular or polygonal, and the width of the upper surface of the semiconductor island structure 220 is at least 30 ⁇ m.
- the width of the upper surface of the semiconductor island structure 220 is implemented according to the current thimble size.
- the semiconductor island structure The width of the upper surface of 220 is at least 40 ⁇ m or at least 50 ⁇ m.
- both the upper surface and the lower surface of the semiconductor island structure 220 are circular, and the diameter of the upper surface of the semiconductor island structure 220 is smaller than the diameter of the lower surface of the semiconductor island structure 220 .
- a protective layer 600 is formed on the semiconductor light emitting unit 210 , the semiconductor island structure 220 and the trench 230 .
- the protective layer 600 includes but is not limited to a distributed Bragg reflector or a single insulating layer.
- the semiconductor light emitting unit 210 includes a first semiconductor stack layer, and a transparent conductive layer 400 is formed on the first semiconductor stack layer.
- the transparent conductive layer 400 includes an opening, and the opening exposes part of the second semiconductor layer 203 .
- the material of the transparent conductive layer 400 is generally selected from a transparent conductive material, and can be specifically selected from indium tin oxide.
- the first semiconductor stack layer has a mesa that exposes part of the first semiconductor layer 201, and a first electrode 500 is formed on the mesa; a second electrode 510 is formed on the transparent conductive layer 400, and the second electrode 510 passes through the opening and the second semiconductor layer.
- Layer 203 contacts.
- the second electrode 510 includes a block portion and at least one strip portion extending from the block portion.
- the second electrode 510 includes a block portion or a strip portion passing through the opening in the transparent conductive layer 400 and the second semiconductor layer 203. contacts to improve the adhesion of the second electrode 510 .
- the width of the opening located under the strip portion in the second electrode 510 is larger than the width of the strip portion in the second electrode 510 .
- the width of the opening below the bulk portion in the second electrode 510 is smaller than the width of the bulk portion in the second electrode 510 , so that the edge of the bulk portion is located on the upper surface of the transparent conductive layer 400 .
- Two pads 710 are used to form the protection layer 600 and forming through holes above the first electrode 500 and the second electrode 510 respectively.
- it further includes: forming a metal block 800 on the semiconductor island structure 220 while forming the first electrode 500 and the second electrode 510; the metal block 800 covers the upper surface of the semiconductor island structure 220, or the metal Block 800 covers the upper surface and at least part of the sidewalls of semiconductor island structure 220 .
- the thickness of the metal block 800 is 0.5-10 ⁇ m, and the thickness of the metal block 800 is preferably 1-3 ⁇ m.
- the material of the metal block 800 can be the same as that of the first electrode 500 and the second electrode 510 . In this step, the flip-chip light-emitting diode shown in FIG. 3 can be obtained.
- the method further includes: forming the metal block 800 on the upper surface of the protective layer 600 above the semiconductor island structure 220 while forming the first pad 700 and the second pad 710 .
- the thickness of the metal block 800 is 0.5-10 ⁇ m, and the thickness of the metal block 800 is preferably 1-3 ⁇ m.
- the material of the metal block 800 can be the same as that of the first pad 700 and the second pad 710 . In this step, the flip-chip light-emitting diode shown in FIG. 4 can be obtained.
- the present application provides a method for manufacturing a flip-chip diode, and specifically provides a method for manufacturing a flip-chip light-emitting diode as shown in FIG. 5 .
- the preparation method comprises the following steps:
- a semiconductor island structure 220 is formed between adjacent semiconductor light emitting units 210 , and a trench exists between the semiconductor island structure 220 and the adjacent semiconductor light emitting unit 210 .
- the number of semiconductor light emitting units 210 is odd or even, and the number of semiconductor light emitting units 210 is preferably even.
- the semiconductor island structure 220 is located in the central area of the flip-chip light-emitting diode, so as to realize that the areas of the light-emitting regions of the semiconductor light-emitting units 210 are as close as possible.
- a semiconductor stack layer 200 is formed on the substrate 100.
- the semiconductor stack layer 200 includes a first semiconductor layer 201, an active layer 202, and a second semiconductor layer 203; the first semiconductor layer 201 is an N-type semiconductor layer, and the active layer 202 is a multi-layer quantum well layer, and the second semiconductor layer 203 is a P-type semiconductor layer.
- the width W1 of the trench between the semiconductor island structure 220 and the adjacent semiconductor light emitting unit 210 increases from bottom to top.
- the shape of the upper surface of the semiconductor island structure 220 is circular or polygonal, and the width of the upper surface of the semiconductor island structure 220 is at least 30 ⁇ m.
- the width of the upper surface of the semiconductor island structure 220 is implemented according to the current thimble size.
- the semiconductor island structure The width of the upper surface of 220 is at least 50 ⁇ m.
- both the upper surface and the lower surface of the semiconductor island structure 220 are circular, and the diameter of the upper surface of the semiconductor island structure 220 is smaller than the diameter of the lower surface of the semiconductor island structure 220 .
- the current blocking layer 300 extends from the second semiconductor layer 203 on the left side to the first semiconductor layer 201 on the right side through the trench 240 .
- the material of the current blocking layer 300 may be one or more of silicon oxide, silicon nitride, silicon carbide or silicon oxynitride.
- a transparent conductive layer 400 is formed on the second semiconductor layer 203 , and its material is generally selected from a transparent conductive material, and can be specifically selected from indium tin oxide.
- the left semiconductor light emitting unit 210 also includes the above-mentioned transparent conductive layer 400 , and the transparent conductive layer 400 is located on the current blocking layer 300 above the second semiconductor layer 203 .
- a first electrode 500 is formed on the first semiconductor layer 201 in the semiconductor light emitting unit 210 at the head end.
- a second electrode 510 is formed on the transparent conductive layer 400 in the semiconductor light emitting unit 210 at the tail end, and the second electrode 510 is in contact with the second semiconductor layer 203 through the opening.
- the second electrode 510 includes a block portion and at least one strip portion extending from the block portion.
- the second electrode 510 includes a block portion or a strip portion passing through the opening in the transparent conductive layer 400 and the second semiconductor layer 203. contacts to improve the adhesion of the second electrode 510 .
- the width of the opening located under the strip portion in the second electrode 510 is larger than the width of the strip portion in the second electrode 510 .
- the width of the opening below the bulk portion in the second electrode 510 is smaller than the width of the bulk portion in the second electrode 510 , so that the edge of the bulk portion is located on the upper surface of the transparent conductive layer 400 .
- An interconnect electrode 520 for connecting adjacent semiconductor light emitting units 210 is formed, and in every two adjacent semiconductor light emitting units 210, the interconnect electrode 520 extends from the transparent conductive layer 400 in the left semiconductor light emitting unit 210 to the right on the first semiconductor layer 201 in the semiconductor light emitting unit 210 .
- the protection layer 600 includes but is not limited to a distributed Bragg reflector or a single insulating layer.
- Two pads 710 are used to form the protection layer 600 and forming through holes above the first electrode 500 and the second electrode 510 respectively.
- it further includes: forming a metal block 800 on the semiconductor island structure 220 while forming the first electrode 500 , the second electrode 510 and the interconnection electrode 520 ; the metal block 800 covers the semiconductor island structure 220 The surface, or the metal block 800 covers the upper surface and at least part of the sidewalls of the semiconductor island structure 220 .
- the thickness of the metal block 800 is between 0.5-10 ⁇ m, and the thickness of the metal block 800 is preferably 1-3 ⁇ m.
- the material of the metal block 800 can be prepared with the first electrode 500, the second electrode 510 or the interconnection electrode 520 same. In this step, the flip-chip LED shown in FIG. 7 can be obtained.
- the method further includes: forming the metal block 800 on the upper surface of the protective layer 600 above the semiconductor island structure 220 while forming the first pad 700 and the second pad 710 .
- the thickness of the metal block 800 is 0.5-10 ⁇ m, and the thickness of the metal block 800 is preferably 1-3 ⁇ m.
- the material of the metal block 800 can be the same as that of the first pad 700 and the second pad 710 . In this step, the flip-chip light-emitting diode shown in FIG. 4 can be obtained.
- a light-emitting device may be an illuminating device, a backlight device, a display device, such as a lamp, a TV, a mobile phone, a panel, or an RGB display.
- the light-emitting device includes the flip-chip light-emitting diodes in the above embodiments, and the above-mentioned flip-chip light-emitting diodes are integrally mounted on the application substrate or the packaging substrate in the number of hundreds, thousands, or tens of thousands to form the light source part.
- the present application forms a semiconductor island structure 220 at the central region of the flip-chip light-emitting diode, and there is a groove between the semiconductor island structure 220 and the semiconductor light-emitting unit 210, and is not used for the conductive light emission of the flip-chip light-emitting diode. process; the area where the semiconductor island structure 220 is located is used as the action area of the thimble.
- the thimble acts on the above-mentioned area, the crack that the thimble pierces or breaks through the protective layer 600 only extends to the upper surface or around the side wall of the semiconductor island structure 220.
- cracks can be prevented from being directly transmitted to the protective layer 600 at the semiconductor light emitting unit 210, thereby avoiding the leakage failure phenomenon of the flip-chip light emitting diode due to the puncture or bursting of the protective layer 600 at the semiconductor light emitting unit 210, and improving Reliability of flip-chip light-emitting diodes.
- this embodiment provides a high voltage flip-chip light emitting diode.
- FIG. 13 is a top view of the flip-chip LED
- FIG. 14 is a schematic cross-sectional view of A-A in FIG. 13 .
- the flip chip light emitting diode includes a substrate 100 and at least two semiconductor light emitting units formed on the substrate 100 .
- a plurality of semiconductor light emitting units are arranged in a predetermined direction and arranged at intervals, and adjacent semiconductor light emitting units are electrically connected. As shown in the figure, it includes first and second semiconductor light emitting units 210a, 210b.
- the first and second semiconductor light emitting units 210a, 210b are located on the substrate 100 and are semiconductor stacked layers, and the semiconductor stacked layer includes a first semiconductor layer 201, a light emitting layer 202 and a second semiconductor layer 203; There is a trench 230 between the semiconductor light emitting units 210 a and 210 b , and the bottom of the trench 230 is located on the substrate 100 .
- the semiconductor stacked layer of the first semiconductor light emitting unit 210a has a local convex portion 210a1
- the semiconductor stacked layer of the second semiconductor light emitting unit 210b has a local concave portion.
- the protrusion 210a1 is located on one edge of the semiconductor stack layer of the first semiconductor light emitting unit 210a, and the width of the semiconductor stack layer of the first semiconductor light emitting unit 210a is measured along a direction extending parallel to one side of the flip-chip light emitting diode. 210a1 widens the width of the entire semiconductor stack layer of the first semiconductor light emitting unit 210a.
- the convex part 210a1 is located in the central area of the flip-chip LED, where the central area of the flip-chip LED is the central area of the plan view or the plan view of the horizontally arranged LEDs.
- the protective layer 600 covers the top and sidewalls of each semiconductor light emitting unit, including the top and sidewalls of the protrusion 210a1, and the groove 230 between the protrusion 210a1 and the adjacent semiconductor light emitting unit.
- the thimble of the transfer device acts on the flip-chip light-emitting diode supported by flexible materials such as blue film to transfer it to other devices or substrates, such as the application substrate, the thimble will act on the first pad 700 and the second pad 700.
- the bumps 210 a 1 between the pads 710 are on the protection layer 600 .
- the grooves between the semiconductor light-emitting units 210 serve as active areas, causing the protective layer 600 to puncture or break the risk of leakage failure. The risk of breaking or bursting the protective layer 600 to generate cracks is reduced, and the reliability of the flip-chip light-emitting diode is improved.
- the design of the convex portion may cause a higher risk of cracking the insulating layer, but the convex portion 210a1 can emit light when electrified, and the design of the convex portion 210a1 reduces the loss of light efficiency.
- the interconnection electrodes can also avoid the design of the convex portion 210a1, and the width of the interconnection electrodes can be narrower to reduce the influence of light absorption.
- the number of semiconductor light emitting units 210 is an odd number or an even number, and the number of semiconductor light emitting units 210 is preferably an even number, and the semiconductor light emitting units are arranged along a straight line.
- the thickness of the convex portion 210a1 of the first semiconductor light emitting unit 210a is equal to the maximum thickness of the semiconductor stack layer of the semiconductor light emitting unit 210a, the bottom of the convex portion 210a1 is the bottom of the semiconductor stack layer, and the top of the convex portion 210a1 is the semiconductor stack layer (that is, the second semiconductor stack layer). the top of the semiconductor layer).
- the semiconductor stack layer includes a first semiconductor layer 201, an active layer 202 and a second semiconductor layer 203; the first semiconductor layer 201 is an N-type semiconductor layer, and the active layer 202 is a multilayer quantum well layer, which can provide blue light, green The radiation of light or red light may also provide ultraviolet or infrared radiation, and the second semiconductor layer 203 is a P-type semiconductor layer.
- N-type semiconductor layer, multi-layer quantum well layer, and P-type semiconductor layer are only the basic constituent units necessary for the semiconductor stack to emit light.
- the semiconductor stack can also include other components that can optimize the performance of flip-chip light-emitting diodes. functional structure layer.
- the thickness of the semiconductor light emitting unit 210 is 3-10 ⁇ m.
- the convex portion 210a1 is located on the edge of the first semiconductor light emitting unit 210a, and the width of the upper surface of the convex portion 210a1 (that is, the upper surface of the second semiconductor layer) is at least 30 ⁇ m. That is, in order to design the convex portion of the first semiconductor light emitting unit, the width of the first semiconductor light emitting unit is at least widened by 30 microns relative to the width of other positions (in a direction parallel to one side of the flip-chip light emitting diode). Measured above).
- the width of the upper surface of the protrusion 210 a 1 is implemented according to the size of the current ejector pin, and the width of the upper surface of the semiconductor island structure 220 is at least 50 ⁇ m and at most 100 ⁇ m.
- the edge of the semiconductor stack layer of the adjacent second semiconductor light emitting unit is concave.
- the edge of the second semiconductor light emitting unit is designed in cooperation with the concave portion and the convex portion.
- the recess makes the overall width of the semiconductor light emitting stack of the second semiconductor light emitting unit partially narrowed.
- the edges of the convex portion 210a1 are non-linear, and the edges of the concave portion are also non-linear.
- the edges of the convex portion are arc-shaped or connected by multiple line segments.
- the second semiconductor light emitting unit 210 b is provided with a first electrode 500 , and the first electrode 500 is electrically connected to the first semiconductor layer 201 in the semiconductor light emitting unit 210 .
- the first semiconductor light emitting unit 210 a is provided with a second electrode 510 .
- a transparent conductive layer 400 is formed on the second semiconductor layer 203, and the transparent conductive layer 400 includes but not limited to an indium tin oxide layer.
- the second electrode 510 is located under the transparent conductive layer 400 , and there may be a current blocking layer 300 under the transparent conductive layer 400 .
- the current blocking layer 300 is located under the second electrode 510 to block the vertical transmission of current and promote the current spreading.
- the transparent conductive layer 400 may include an opening, and the opening exposes part of the second semiconductor layer 2 , and the second electrode contacts the second semiconductor layer through the opening.
- the second electrode 510 includes a block portion (width wider than the strip portion) and at least one strip portion extending from the block portion.
- the second electrode 510 includes a block portion or a strip portion passing through the transparent conductive layer 400 The opening is in contact with the second semiconductor layer 203 to improve the adhesion of the second electrode 510 .
- the first semiconductor light emitting unit 210a includes the above-mentioned transparent conductive layer 400, which is transparent and conductive Layer 400 is located on the current blocking layer 300 above the second semiconductor layer 203, and the interconnect electrode 520 extends from the transparent conductive layer 400 in the first semiconductor light emitting unit 210a across the trench to the first semiconductor light emitting unit in the second semiconductor light emitting unit 210b. on layer 201.
- the current blocking layer 300 is formed between the interconnection electrode 520 and the sidewalls of the first semiconductor light emitting unit 210a, the sidewalls of the second semiconductor light emitting unit 210b and the bottom of the trenches.
- the transparent electrode layer 400 extends to the upper surface of the convex portion 210a1, and the interconnect electrode 520 is located on the transparent electrode layer 400 above the upper surface of the convex portion 210a1 and extends to the first semiconductor layer of the second semiconductor light emitting unit 210b.
- the width of the interconnection electrode 520 is at least 30 microns, and the interconnection electrode 520 is a metal structure, which can play a certain buffering effect on the action of the thimble.
- the transparent electrode layer 400 extends to the upper surface of the protrusion, the interconnection electrode 520 is not located above the protrusion 210a1, and the interconnection electrode 520 avoids the protrusion.
- the part 210a1 is designed, for example, the interconnection electrode 520 is located on one side or both sides of the convex part 210a1, so that the interconnection electrode can be made narrower to reduce light absorption.
- the first pad 700 is located on the protection layer 600 and is electrically connected to one of the semiconductor light emitting units (for example, the first semiconductor light emitting unit 210 a ) through the protection layer 600
- the second pad 710 is located on the protection layer 600 and passes through the protection layer. 600 is electrically connected to another semiconductor light emitting unit (such as the second semiconductor light emitting unit 210b).
- the protective layer 600 is respectively provided with through holes located above the first electrode 500 and the second electrode 510, and the first pad 700 and the second pad 710 are located on the protective layer 600, and are connected to the first electrode 500, The second electrode 510 is connected.
- the width W 1 of the trench at the bottom is greater than or equal to 3 ⁇ m.
- the first electrode 500, the second electrode 510 and the interconnection electrode 520 are metal electrodes, which may include an adhesion layer, a reflection layer and a barrier layer, wherein the adhesion layer is a chromium layer or a titanium layer, the reflection layer is an aluminum layer, and the barrier layer is titanium A repeating stack of platinum and platinum layers.
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Abstract
本申请公开了一种倒装发光二极管和发光装置,该倒装发光二极管包括衬底、以及位于衬底上的半导体发光单元;倒装发光二极管的中心区域处保留顶针作用的半导体堆叠层区域,形成半导体岛结构或者凸部,该半导体岛结构或者凸部所在区域作为顶针的作用区域平整,在顶针作用在上述区域时,刺破或顶破保护层风险降低。
Description
本申请涉及半导体相关技术领域,尤其涉及一种倒装发光二极管和发光装置。
倒装发光二极管由于发光效率高、节能、环保、寿命长的特点,广泛应用于各个领域,例如照明、背光。对现有倒装发光二极管进行封装时,需要使用顶针作用在倒装发光二极管正面的某一区域,以将其顶起并进行固晶,顶针的作用区域常常为倒装发光二极管正面的中心区域。
倒装发光二极管正面包括外延结构、透明导电层、电极以及用于对外延结构、透明导电层、电极进行保护的保护层和焊盘,保护层通常是由氧化硅材料制成,或者是由氧化硅与氧化钛组合形成的分布式布拉格反射镜。
由于保护层的脆性,顶针作用在倒装发光二极管正面时,顶针易刺破或者顶破保护层,露出下面的外延结构、透明导电层或者电极,导致倒装发光二极管易出现漏电失效现象,并影响倒装发光二极管的可靠性。
本申请的目的在于提供倒装发光二极管,其设置与半导体发光单元间隔开的半导体岛结构,该半导体岛结构所在区域作为顶针的作用区域,能够避免顶针刺破或者顶破半导体发光单元处的保护层,并避免倒装发光二极管出现漏电失效现象,提高倒装发光二极管的可靠性。
本申请的目的在于提供第一种倒装发光二极管,其包括衬底和位于衬底上的半导体堆叠层;半导体堆叠层包括一个岛结构和至少一个半导体发光单元,沟槽位于半导体发光单元与岛结构之间。
在一些实施例中,沟槽的底部位于部分厚度的半导体叠层上。
在一些实施例中,在所述倒装发光二极管处于通电状态时,所述半导体岛结构不发光。
在一些实施例中,从倒装发光二极管厚度方向的剖面图上看,半导体堆叠层包括第一半导体层、发光层和第二半导体层,所述的沟槽的底部低于发光层。
在一些实施例中,沟槽的底部位于衬底上。
在一些实施例中,所述半导体岛结构位于该倒装发光二极管的中心区域。
在一些实施例中,所述半导体岛结构的上表面的宽度至少是30μm。
在一些实施例中,所述半导体岛结构的上表面形状是圆形或者多边形。
在一些实施例中,所述半导体岛结构的高度小于等于所述半导体发光单元的高度。
在一些实施例中,还包括金属块,所述金属块位于所述半导体岛结构的上方。
在一些实施例中,所述金属块直接与所述半导体岛结构的上表面接触。
在一些实施例中,所述金属块的厚度介于0.5~10μm。
在一些实施例中,还包括保护层,所述保护层至少覆盖所述半导体岛结构的上表面和侧壁。
在一些实施例中,所述保护层位于所述金属块与所述半导体岛结构之间,或者,所述保护层位于所述金属块的上方。
在一些实施例中,还包括第一焊盘和第二焊盘;
所述保护层覆盖的区域还包括所述半导体发光单元的上表面和侧壁;所述半导体发光单元包括第一半导体层、有源层和第二半导体层;
所述第一焊盘位于所述保护层上,并穿过所述保护层与所述半导体发光单元中的第一半导体层电性连接,所述第二焊盘位于所述保护层上,并穿过所述保护层与所述半导体发光单元中的第二半导体层电性连接。
在一些实施例中,所述第一焊盘和第二焊盘均未在所述金属块的上方。
在一些实施例中,所述半导体发光单元的数量为1个。
在一些实施例中,所述半导体发光单元环绕于所述半导体岛结构的***。
在一些实施例中,所述半导体发光单元的数量为多个,且多个所述半导体发光单元间隔布置;所述半导体发光单元的数量为奇数个或者偶数个。
在一些实施例中,所述半导体岛结构位于相邻半导体发光单元之间。
在一些实施例中,所述半导体岛结构位于该倒装发光二极管中心区域处的相邻半导体发光单元之间。
在一些实施例中,相邻所述半导体发光单元之间电性连接。
在一些实施例中,所述半导体岛结构与半导体发光单元之间的所述沟槽的宽度自下而上递增。
本发明同时提供第二种倒装发光二极管,其包括:
衬底;
第一、第二半导体发光单元,位于所述衬底上,包括半导体堆叠层,半导体堆叠层包括第一半导体层、发光层和第二半导体层;
沟槽,位于相邻的第一、第二半导体发光单元的半导体堆叠层之间,并且沟槽底部位于衬底上;
所述的第一半导体发光单元的半导体堆叠层具有局部的凸部。
在一些实施例中,所述的第二半导体发光单元的半导体堆叠层具有局部的凹部。
在一些实施例中,所述凸部和所述凹部使沟槽在相邻半导体发光单元之间为非直线型水平延伸。
在一些实施例中,所述凸部位于所述的倒装发光二极管的中心区域。
在一些实施例中,所述凸部的宽度至少是30μm。
在一些实施例中,所述的凸部与所述的凹部相配合设计。
在一些实施例中,所述的凸部的边缘是非直线型。
在一些实施例中,所述的凸部的边缘是弧形或者多条线段连接。
在一些实施例中,所述凸部的厚度等于所述半导体堆叠层的总厚度。
在一些实施例中,还包括互连电极,互连电极连接第一半导体发光单元和第二半导体发光单元。
在一些实施例中,所述的互连电极位于凸部之上。
在一些实施例中,所述的互连电极位于凸部之上。
在一些实施例中,所述的互连电极不位于所述的凸部上方。
本申请还提供一种发光装置,其包括上述第一种或者第二种的倒装发光二极管。
与现有技术相比,本申请至少具有如下有益效果:
在倒装发光二极管的中心区域处保留顶针作用的半导体堆叠层区域,形成半导体岛结构或者凸部,该半导体岛结构或者凸部所在区域作为顶针的作用区域平整,在顶针作用在上述区域时,刺破或顶破保护层风险降低。
为了更清楚地说明本申请实施例的技术方案,下面将对实施例中所需要使用的附图作简单地介绍,应当理解,以下附图仅示出了本申请的某些实施例,因此不应被看作是对范围的限定,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他相关的附图。
图1a为根据本申请实施例示出的一种倒装发光二极管的俯视图;
图1b为根据本申请实施例示出的一种图1a的A-A截面示意图;
图2a为根据本申请实施例示出的一种倒装发光二极管的俯视图;
图2b为根据本申请实施例示出的一种图2a的A-A截面示意图;
图3为根据本申请实施例示出的一种图1的A-A截面示意图;
图4为根据本申请实施例示出的一种图1的A-A截面示意图;
图5为根据本申请实施例示出的一种倒装发光二极管的俯视图;
图6为根据本申请实施例示出的一种图5的A-A截面示意图;
图7为根据本申请实施例示出的一种图5的A-A截面示意图;
图8为根据本申请实施例示出的一种图5的A-A截面示意图;
图9为根据本申请实施例示出的一种图5的B-B截面示意图;
图10~图12为根据本申请实施例示出的一种倒装发光二极管处于不同制备阶段的A-A截面示意图;
图13为根据本申请实施例示出的一种倒装发光二极管的俯视图;
图14为根据本申请实施例示出的一种图13的A-A截面示意图。
图示说明:
100衬底;200半导体堆叠层;201第一半导体层;202有源层;203第二半导体层;210、210a、210b半导体发光单元;210a1凸部;220半导体岛结构;230沟槽;240沟槽;300电流阻挡层;400透明导电层;500第一电极;510第二电极;520互连电极;600保护层;700第一焊盘;710第二焊盘;800金属块。
以下通过特定的具体实施例说明本申请的实施方式,本领域技术人员可由本说明书所揭露的内容轻易地了解本申请的其他优点与功效。本申请还可以通过另外不同的具体实施方式加以实施或营业,本申请中的各项细节也可以基于不同观点与应用,在没有背离本申请的精神下进行各种修饰或改变。
在本申请的描述中,需要说明的是,术语“上”、“下”、“左”和“右”等指示的方位或位置关系为基于附图所示的方位或位置关系,或者是该申请产品使用时惯常摆放的方位或位置关系,仅是为了便于描述本申请和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本申请的限制。此外,术语“第一”和“第二”等仅用于区分描述,而不能理解为指示或暗示相对重要性。
实施例
1
根据本申请的一个方面,提供一种倒装发光二极管。图1a、2a为该倒装发光二极管的俯视图,图1b、2b、3-4为图1a、2a的A-A截面示意图。
该倒装发光二极管包括衬底、位于衬底上的半导体堆叠层;半导体堆叠层包括一个岛结构和至少一个半导体发光单元,沟槽位于半导体发光单元与岛结构之间。
该倒装发光二极管包括衬底100、衬底上包括半导体堆叠层,半导体堆叠层包括第一半导体层201、有源层202和第二半导体层203。半导体堆叠层包括一个岛结构220和一个半导体发光单元210,半导体发光单元210围绕岛结构,岛结构位于倒装发光二极管的中心区域。半导体岛结构220与半导体发光单元210之间有沟槽230。
保护层600覆盖半导体发光单元210的上表面和侧壁、半导体岛结构220的上表面和侧壁、以及半导体岛结构220与半导体发光单元210之间的沟槽。
倒装发光二极管的正面与衬底100的上表面朝向相同,也就是说倒装发光二极管正面的中心区域设置有半导体岛结构220,该半导体岛结构220与半导体发光单元210独立设置。半导体岛结构220所在区域作为顶针的作用区域,在顶针作用在上述区域时,顶针所刺破或顶破保护层600的裂缝产生在半导体岛结构220的上表面或者进一步延伸至半导体岛结构220的侧壁周围,半导体发光单元210与半导体岛结构220之间的沟槽一定程度上可阻挡裂缝传递,传递到发光区域的保护层600上,从而避免倒装发光二极管因发光区域处的保护层600被刺破或者顶破而出现的漏电失效现象,提高倒装发光二极管的可靠性。
具体的,所述的半导体发光单元210为提供发光的区域,包括:第一半导体层201、有源层202和第二半导体层203。从图1a俯视图上看,所述半导体发光单元210呈环形,且环绕于半导体岛结构220的***设置。
半导体岛结构220所在的该倒装发光二极管的中心区域为倒装发光二极管俯视图的中心区域。
作为一个实施例,沟槽230的底部位于部分厚度的半导体堆叠层上。更佳的如图1b的剖面图,沟槽230的底部低于发光层202,由此可以降低岛结构上的保护层被顶破产生的裂纹传递至发光区影响发光区电性的风险。也就是在倒装发光二极管通电时,半导体岛结构220不发光。沟槽230的底部位于第一半导体层201上,第一半导体层201上岛结构可包括部分厚度的第一半导体层201、发光层202和第二半导体堆叠层203。也就是半导体岛结构并不是跟半导体发光单元210彼此独立的设置在衬底上,而是通过第一半导体层201连接在一起。
作为一个更佳的实施例,图2a-2b所示,半导体岛结构220设置在该倒装发光二极管的中心区域,半导体岛结构220与半导体发光单元210彼此独立地位于衬底100上,并且两者之间存在沟槽230,无半导体层或者导电层连接两者。沟槽的底部位于衬底100上。由此沟槽的厚度更深,并且半导体岛结构与半导体发光单元之间彼此独立,倒装发光二极管因保护层600被刺破或者顶破而出现的漏电失效的风险更低,可更进一步的提高倒装发光二极管的可靠性。
在图2b的实施方式中,半导体岛结构220的堆叠材料层的材料组成以及各层的厚度与半导体发光单元210一致。半导体发光单元210的厚度为3~10μm。
参见图2~图4,半导体发光单元210包括有第一半导体堆叠层,半导体岛结构220包括有第二半导体堆叠层。半导体岛结构220的高度小于等于半导体发光单元210的高度,半导体岛结构220的高度优选为小于等于第一半导体堆叠层的高度。第一半导体堆叠层和第二半导体堆叠层均包括有第一半导体层201、有源层202和第二半导体层203。
为了获得半导体发光单元210和半导体岛结构220,可在衬底100上先获得半导体堆叠层200,然后通过纵向蚀刻工艺自半导体堆叠层200的表面向衬底100表面蚀刻半导体堆叠层200,以形成独立的半导体发光单元210和半导体岛结构220。较佳地,进一步蚀刻半导体岛结构220上的部分半导体材料层,可使半导体岛结构220的高度小于半导体发光单元210的高度。
半导体岛结构220的上表面形状包括但不限于是圆形或者多边形,且半导体岛结构220的上表面的宽度至少是30μm,较佳地,半导体岛结构220上表面的宽度根据目前的顶针尺寸实施,半导体岛结构220上表面的宽度至少为50μm,至多为80μm。本实施例中,半导体岛结构220的上表面和下表面均呈圆形,且半导体岛结构220上表面的直径小于半导体岛结构220下表面的直径。
较佳地,半导体岛结构220与半导体发光单元210之间的沟槽的宽度
W
1
自下而上递增。沟槽在底部的宽度
W
1
大于等于3μm。
半导体堆叠层中第一半导体层201为N型半导体层,有源层202为多层量子阱层,其可提供蓝光、绿光或者红光的辐射,也可以提供紫外或者红外的辐射,第二半导体层203为P型半导体层。N型半导体层、多层量子阱层、P型半导体层仅是第一半导体堆叠层的基本构成单元,在此基础上,第一半导体堆叠层还可以包括其他对倒装发光二极管的性能具有优化作用的功能结构层,例如未掺杂的半导体层。半导体堆叠层的厚度为3~15μm。
第一焊盘700和第二焊盘710均位于保护层600上,并均穿过保护层600与半导体发光单元210电性连接。
当倒装发光二极管被安装到应用基板上时,第一焊盘700和第二焊盘710可通过回流焊工艺或者热压等工艺实现与应用基板上的电极连接。第一焊盘700、第二焊盘710与应用基板上的电极之间可以存在含锡成分的连接层,含锡连接层可以是锡膏。第一焊盘700或者第二焊盘710上可设置有含锡连接层,进而避免锡膏的使用。
第一焊盘700和第二焊盘710可包括黏附层、反射层、阻挡层和金层。其中,黏附层为钛层或者铬层;反射层为铝层;阻挡层为镍层,或者镍层与铂层的重复叠层。上述的阻挡层可用于阻挡含锡连接层渗入至倒装发光二极管的内部。较佳地,第一焊盘700和第二焊盘710还包括位于金层上的厚锡层。
从图1a、图2a所示的倒装发光二极管的俯视图来看,半导体岛结构220位于第一焊盘700和第二焊盘710之间。从图1b和2b所示的倒装发光二极管的A-A截面示意图来看,第一焊盘700和第二焊盘710均不位于半导体岛结构220的上方。
在一种实施方式中,该倒装发光二极管还可包括金属块800,金属块800位于半导体岛结构220的上方。金属块800具有一定的延展性,可一定程度地缓冲顶针的作用力。较佳的,金属块800的厚度介于0.5~10μm,金属块800的厚度优选为1~3μm,在本实施例中,金属块800的制备材料包括但不限于是Au、Ti、Al、Cr、Pt、TiW合金或Ni的任意组合。
参见图3,金属块800直接与半导体岛结构220的上表面接触,保护层600位于金属块800的上方。具体地,金属块800覆盖半导体岛结构220的上表面,或者,金属块800覆盖半导体岛结构220的上表面和至少部分侧壁。
或者,参见图4,金属块800位于保护层600上表面,且处于半导体岛结构220上方,也就是说保护层600位于金属块800与半导体岛结构220之间。优选的,金属块800的材料和厚度均与第一焊盘700和第二焊盘710相同,金属块800位于第一焊盘700、第二焊盘710之间,并与第一焊盘700和第二焊盘710之间保持一定的间距。金属块的800的宽度小于等于半导体岛结构220的宽度。
需要说明的是,半导体岛结构220的设计即可一定程度地防止半导体发光单元210处的保护层600破裂,金属块800并不必需地设置。
在一种实施方式中,衬底100是透明衬底,例如,蓝宝石衬底。衬底100的上表面可以具备蓝宝石图形,或者衬底100的上表面可以具备异质材料的图形,例如氧化硅。上述图形的高度可以是1~3μm,宽度可以是1~4。衬底100还包括上表面、下表面以及侧面,有源层202辐射的光可从衬底100的侧面和上表面辐射出光。衬底100的厚度优选为60μm以上,例如80μm、120μm、150μm或者250μm。
在一种实施方式中,参见图1~图4,第一半导体堆叠层具有暴露出部分第一半导体层201的台面,第一电极500形成在该台面上。
半导体发光单元210还包括有位于第二半导体层203上的透明导电层400,其包括但不限于是氧化铟锡层。透明导电层400包括有开口,且开口暴露出部分第二半导体层203。第二电极510形成在透明导电层400上并穿过开口与第二半导体层203接触。
第二电极510包括块状部分以及自块状部分延伸出去的至少一条条状部分,第二电极510包括块状的一部分或者条状的一部分通过透明导电层400中的开口与第二半导体层203接触,以改善第二电极510的附着性。
位于第二电极510中条状部分下方的开口的宽度大于第二电极510中条状部分的宽度。位于第二电极510中块状部分下方的开口的宽度小于第二电极510中块状部分的宽度,以实现块状部分的边缘位于透明导电层400的上表面。
第一电极500和第二电极510可包括黏附层、反射层和阻挡层,其中,黏附层为铬层或者钛层,反射层为铝层,阻挡层为钛层和铂层组成的重复叠层。
保护层600分别设有位于第一电极500、第二电极510上方的通孔,第一焊盘700、第二焊盘710位于保护层600上,并分别通过上述通孔与第一电极500、第二电极510连接。第一焊盘700和第二焊盘710均未在金属块800的上方。
保护层600包括但不限于是分布式布拉格反射镜或者单层绝缘层,本实施例中,该保护层600的材料为SiO
2、TiO
2、ZnO
2、ZrO
2、Cu
2O
3等不同材料中的至少两种,其具体为采用诸如电子束蒸镀或者离子束溅射等技术使两种材料以交替层叠成多层的方式所制成的分布式布拉格反射镜。
实施例
2
高压倒装发光二极管作为常规的倒装发光二极管的变形设计,通过沟槽划分为多个面积相等的子半导体发光单元,然后各子半导体发光单元间通过相互串联/并联实现电连接。该种设计导致偶数子半导体发光单元中心区域存在沟槽,由于倒装发光二极管在转移时,需要使用顶针作用到发光二极管正面电极一面侧的中间区域,当沟槽位置位于中心区域,绝缘层由于不平整容易被顶针顶裂,导致水汽容易沿着破裂的位置侵入自发光单元内部,发光二极管在老化测试或长期使用过程中容易发生失效。
本发明针对此问题设计了一种防顶针结构的高压倒装发光二极管,可有效解决此类异常。
本实施例提供一种高压倒装发光二极管。图5为该倒装发光二极管的俯视图,图6~图8为图5的A-A截面示意图,图9为图5的B-B截面示意图。
该倒装发光二极管包括衬底100、形成在衬底100上的多个半导体发光单元210和半导体岛结构220。多个半导体发光单元210按照预设方向排列且间隔布置,相邻半导体发光单元210之间电性连接。半导体岛结构220位于该倒装发光二极管中心区域处的相邻半导体发光单元210之间,且和与其相邻的半导体发光单元210之间存在沟槽,此处倒装发光二极管的中心区域指的是其俯视图的中心区域。半导体发光单元210的数量为奇数或者偶数,半导体发光单元210的数量优选为偶数。
保护层600覆盖每个半导体发光单元210的上表面和侧壁、半导体岛结构220的上表面和侧壁、以及半导体岛结构220与半导体发光单元210之间的沟槽。
第一焊盘700位于保护层600上并穿过保护层600与首端的半导体发光单元210电性连接,第二焊盘710位于保护层600上并穿过保护层600与尾端的半导体发光单元210电性连接。
较佳地,半导体岛结构220和与其相邻的半导体发光单元210之间的沟槽的宽度
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1
自下而上递增。沟槽在底部的宽度
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大于等于3μm,小于等于15μm。
在一种实施方式中,半导体岛结构220的堆叠材料层的材料组成以及各层的厚度与半导体发光单元210一致。半导体发光单元210的厚度为3~10μm。
参见图6~图8,每个半导体发光单元210均包括有第一半导体堆叠层,半导体岛结构220包括有第二半导体堆叠层。半导体岛结构220的高度小于等于半导体发光单元210的高度,半导体岛结构220的高度优选为小于等于第一半导体堆叠层的高度。第一半导体堆叠层和第二半导体堆叠层均包括有第一半导体层201、有源层202和第二半导体层203;第一半导体层201为N型半导体层,有源层202为多层量子阱层,其可提供蓝光、绿光或者红光的辐射,也可以提供紫外或者红外的辐射,第二半导体层203为P型半导体层。N型半导体层、多层量子阱层、P型半导体层仅是第一半导体堆叠层的基本构成单元,在此基础上,第一半导体堆叠层还可以包括其他对倒装发光二极管的性能具有优化作用的功能结构层。
为了获得多个半导体发光单元210和半导体岛结构220,可在衬底100上先获得半导体堆叠层200,然后通过纵向蚀刻工艺自半导体堆叠层200的表面向衬底100表面蚀刻半导体堆叠层200,以形成多个半导体发光单元210和半导体岛结构220。较佳地,进一步蚀刻半导体岛结构220上的部分半导体材料层,可使半导体岛结构220的高度小于半导体发光单元210的高度。
半导体岛结构220的上表面形状包括但不限于是圆形或者多边形,且半导体岛结构220的上表面的宽度至少是30μm,较佳地,半导体岛结构220上表面的宽度根据目前的顶针尺寸实施,半导体岛结构220上表面的宽度至少为40μm 或者至少为50μm,至多为80μm。本实施例中,半导体岛结构220的上表面和下表面均呈圆形,且半导体岛结构220上表面的直径小于半导体岛结构220下表面的直径。
在一种实施方式中,该倒装发光二极管还可包括金属块800,金属块800位于半导体岛结构220的上方。金属块800具有一定的延展性,可一定程度地缓冲顶针的作用力。金属块800的厚度介于0.5~10μm,金属块800的厚度优选为1~3μm,在本实施例中,金属块800的制备材料包括但不限于是Au、Ti、Al、Cr、Pt、TiW合金或Ni的任意组合。
参见图7,金属块800直接与半导体岛结构220的上表面接触,保护层600位于金属块800的上方。具体地,金属块800覆盖半导体岛结构220的上表面,或者,金属块800覆盖半导体岛结构220的上表面和至少部分侧壁。
或者,参见图8,金属块800位于保护层600上表面,且处于半导体岛结构220上方,也就是说保护层600位于金属块800与半导体岛结构220之间。优选的,金属块800的材料和厚度均与第一焊盘700和第二焊盘710相同,金属块800位于第一焊盘700、第二焊盘710之间,并与第一焊盘700和第二焊盘710之间保持一定的间距。金属块的800的宽度小于等于半导体岛结构220的宽度。
需要说明的是,半导体岛结构220的设计即可一定程度地防止半导体发光单元210处的保护层600破裂,金属块800并不必需地设置。
在一种实施方式中,参见图9,倒装发光二极管还包括有电流阻挡层300,在每相邻的两个半导体发光单元210中,电流阻挡层300自左侧半导体发光单元210中的第二半导体层203延伸至右侧半导体发光单元210中的第一半导体层201。电流阻挡层300的材料可选为氧化硅、氮化硅、碳化硅或氮氧化硅的一种或多种。
首端的半导体发光单元210设置有第一电极500,第一电极500与该半导体发光单元210中的第一半导体层201电性连接。
尾端的半导体发光单元210设置有第二电极510。在尾端的半导体发光单元210中。第二半导体层203上形成有透明导电层400,透明导电层400包括但不限于是氧化铟锡层。透明导电层400包括有开口,且开口暴露出部分第二半导体层203,第二电极510穿过开口与第二半导体层203接触。
第二电极510包括块状部分以及自块状部分延伸出去的至少一条条状部分,第二电极510包括块状的一部分或者条状的一部分通过透明导电层400中的开口与第二半导体层203接触,以改善第二电极510的附着性。
位于第二电极510中条状部分下方的开口的宽度大于第二电极510中条状部分的宽度。位于第二电极510中块状部分下方的开口的宽度小于第二电极510中块状部分的宽度,以实现块状部分的边缘位于透明导电层400的上表面。
相邻的两个半导体发光单元210通过互连电极520电性连接,具体地,在每相邻的两个半导体发光单元210中,第一半导体发光单元210a包括有上述透明导电层400,透明导电层400位于第二半导体层203上方的电流阻挡层300上,互连电极520自左侧半导体发光单元210中的透明导电层400延伸至右侧半导体发光单元210中的第一半导体层201上。
第一电极500、第二电极510和互连电极520可包括黏附层、反射层和阻挡层,其中,黏附层为铬层或者钛层,反射层为铝层,阻挡层为钛层和铂层组成的重复叠层。
保护层600分别设有位于第一电极500、第二电极510上方的通孔,第一焊盘700、第二焊盘710位于保护层600上,并分别通过上述通孔与第一电极500、第二电极510连接。
保护层600包括但不限于是分布式布拉格反射镜或者单层绝缘层,本实施例中,该保护层600的材料为SiO
2、TiO
2、ZnO
2、ZrO
2、Cu
2O
3等不同材料中的至少两种,其具体为采用诸如电子束蒸镀或者离子束溅射等技术使两种材料以交替层叠成多层的方式所制成的分布式布拉格反射镜。
该设计可以运用于照明、显示等发光装置上,并且更佳的适用于设计为小尺寸的发光二极管,并且对亮度需求不高但是可靠性要求高,对应的发光装置例如背光应用的电视、显示屏或者RGB三色基发光二极管显示屏。
以背光应用为例,一般是采用直下式背光设计,通过大批量的密布倒装发光二极管,从而实现更小范围内的区域调光,相对于传统的背光设计,其能在更小的混光距离内实现更好的亮度均匀性、更高对比度,且不需要额外透镜二次配光,从而实现终端产品更薄、高显色性和省电。然而倒装发光二极管的大数量使用需要更高的转移良率以及性能稳定性。采用本发明的岛设计,可以有效的缓解上述问题,可以提升大批量的转移良率,并且保证发光二极管的性能稳定性。
实施例
3
本申请提供一种倒装发光二极管的制备方法,具体提供一种图1所示的倒装发光二极管的制备方法。该制备方法包括以下步骤:
S1、参见图10,提供衬底100,并在衬底100上形成半导体堆叠层200。
半导体堆叠层200包括第一半导体层201、有源层202和第二半导体层203;第一半导体层201为N型半导体层,有源层202为多层量子阱层,第二半导体层203为P型半导体层。本实施例中,衬底100为蓝宝石图形化衬底或者蓝宝石平底衬底。
S2、参见图11,蚀刻半导体堆叠层200并形成贯穿该半导体堆叠层200的沟槽230,沟槽230呈环形并将半导体堆叠层200划分成独立的半导体发光单元210和半导体岛结构220,半导体发光单元210环绕于半导体岛结构220的***。
沟槽230的宽度为半导体岛结构220与半导体发光单元210之间的沟槽的宽度
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1
,
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自下而上递增。
半导体岛结构220的上表面形状是圆形或者多边形,且半导体岛结构220的上表面的宽度至少是30μm,较佳地,半导体岛结构220上表面的宽度根据目前的顶针尺寸实施,半导体岛结构220上表面的宽度至少为40μm 或者至少为50μm。本实施例中,半导体岛结构220的上表面和下表面均呈圆形,且半导体岛结构220上表面的直径小于半导体岛结构220下表面的直径。
S3、参见图12,于半导体发光单元210、半导体岛结构220以及沟槽230处形成保护层600,保护层600包括但不限于是分布式布拉格反射镜或者单层绝缘层。
具体地,半导体发光单元210包括有第一半导体堆叠层,在第一半导体堆叠层上形成透明导电层400,透明导电层400包括有开口,且开口暴露出部分第二半导体层203。透明导电层400的材料一般选择具有透明性质的导电材料,可具体选为氧化铟锡。
第一半导体堆叠层具有暴露出部分第一半导体层201的台面,在该台面上形成第一电极500;在透明导电层400上形成第二电极510,第二电极510穿过开口与第二半导体层203接触。
第二电极510包括块状部分以及自块状部分延伸出去的至少一条条状部分,第二电极510包括块状的一部分或者条状的一部分通过透明导电层400中的开口与第二半导体层203接触,以改善第二电极510的附着性。
位于第二电极510中条状部分下方的开口的宽度大于第二电极510中条状部分的宽度。位于第二电极510中块状部分下方的开口的宽度小于第二电极510中块状部分的宽度,以实现块状部分的边缘位于透明导电层400的上表面。
蚀刻保护层600并分别形成位于第一电极500、第二电极510上方的通孔,上述通孔用于形成与第一电极500对应的第一焊盘700,以及与第二电极510对应的第二焊盘710。
S4、形成与半导体发光单元210电性连接的第一焊盘700和第二焊盘710。此步骤可得到图2所示的倒装发光二极管。
在一种实施方式中,还包括:在形成第一电极500和第二电极510的同时,在半导体岛结构220上形成金属块800;金属块800覆盖半导体岛结构220的上表面,或者,金属块800覆盖半导体岛结构220的上表面和至少部分侧壁。金属块800的厚度介于0.5~10μm,金属块800的厚度优选为1~3μm,在本实施例中,金属块800的制备材料可与第一电极500、第二电极510相同。此步骤可得到图3所示的倒装发光二极管。
在一种实施方式中,还包括:在形成第一焊盘700和第二焊盘710的同时,在保护层600上表面中处于半导体岛结构220上方的区域上形成金属块800。金属块800的厚度介于0.5~10μm,金属块800的厚度优选为1~3μm,在本实施例中,金属块800的制备材料可与第一焊盘700和第二焊盘710相同。此步骤可得到图4所示的倒装发光二极管。
实施例
4
本申请提供一种倒装二极管的制备方法,具体提供一种图5所示的倒装发光二极管的制备方法。该制备方法包括以下步骤:
S10、提供衬底100,并在衬底100上形成多个按照预设方向排列且间隔布置的半导体发光单元210,相邻半导体发光单元210之间电性连接;该倒装发光二极管中心区域处的相邻半导体发光单元210之间形成有半导体岛结构220,且半导体岛结构220和与其相邻的半导体发光单元210之间存在沟槽。半导体发光单元210的数量为奇数或者偶数,半导体发光单元210的数量优选为偶数。半导体岛结构220处于倒装发光二极管的中心区域,以便于实现各半导体发光单元210的发光区域面积尽量接近。
具体地,在衬底100上形成半导体堆叠层200,半导体堆叠层200包括第一半导体层201、有源层202和第二半导体层203;第一半导体层201为N型半导体层,有源层202为多层量子阱层,第二半导体层203为P型半导体层。蚀刻半导体堆叠层200并形成多个用于形成半导体发光单元210的第一半导体堆叠层,相邻第一半导体堆叠层之间通过沟槽240间隔,半导体岛结构220形成在衬底100中心区域的沟槽240内。
半导体岛结构220和与其相邻的半导体发光单元210之间的沟槽的宽度
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自下而上递增。半导体岛结构220的上表面形状是圆形或者多边形,且半导体岛结构220的上表面的宽度至少是30μm,较佳地,半导体岛结构220上表面的宽度根据目前的顶针尺寸实施,半导体岛结构220上表面的宽度至少为50μm。本实施例中,半导体岛结构220的上表面和下表面均呈圆形,且半导体岛结构220上表面的直径小于半导体岛结构220下表面的直径。
在每相邻的两个半导体发光单元210中,电流阻挡层300自左侧的第二半导体层203经沟槽240延伸至右侧的第一半导体层201。电流阻挡层300的材料可选为氧化硅、氮化硅、碳化硅或氮氧化硅的一种或多种。
在尾端的半导体发光单元210中,于第二半导体层203上形成透明导电层400,其材料一般选择具有透明性质的导电材料,可具体选为氧化铟锡。在每相邻的两个半导体发光单元210中,左侧半导体发光单元210也包括有上述透明导电层400,透明导电层400位于第二半导体层203上方的电流阻挡层300上。
在首端的半导体发光单元210中的第一半导体层201上形成有第一电极500。
在尾端的半导体发光单元210中的透明导电层400上形成有第二电极510,第二电极510穿过开口与第二半导体层203接触。
第二电极510包括块状部分以及自块状部分延伸出去的至少一条条状部分,第二电极510包括块状的一部分或者条状的一部分通过透明导电层400中的开口与第二半导体层203接触,以改善第二电极510的附着性。
位于第二电极510中条状部分下方的开口的宽度大于第二电极510中条状部分的宽度。位于第二电极510中块状部分下方的开口的宽度小于第二电极510中块状部分的宽度,以实现块状部分的边缘位于透明导电层400的上表面。
形成用于连接相邻半导体发光单元210的互连电极520,在每相邻的两个半导体发光单元210中,互连电极520自左侧半导体发光单元210中的透明导电层400延伸至右侧半导体发光单元210中的第一半导体层201上。
S20、于多个半导体发光单元210、半导体岛结构220以及沟槽240处形成保护层600,保护层600包括但不限于是分布式布拉格反射镜或者单层绝缘层。
蚀刻保护层600并分别形成位于第一电极500、第二电极510上方的通孔,上述通孔用于形成与第一电极500对应的第一焊盘700,以及与第二电极510对应的第二焊盘710。
S30、形成与首端半导体发光单元210电性连接的第一焊盘700,以及与尾端半导体发光单元210电性连接的第二焊盘710。此步骤可得到图6所示的倒装发光二极管。
在一种实施方式中,还包括:在形成第一电极500、第二电极510和互连电极520的同时,在半导体岛结构220上形成金属块800;金属块800覆盖半导体岛结构220的上表面,或者,金属块800覆盖半导体岛结构220的上表面和至少部分侧壁。金属块800的厚度介于0.5~10μm,金属块800的厚度优选为1~3μm,在本实施例中,金属块800的制备材料可与第一电极500、第二电极510或者互连电极520相同。此步骤可得到图7所示的倒装发光二极管。
在一种实施方式中,还包括:在形成第一焊盘700和第二焊盘710的同时,在保护层600上表面中处于半导体岛结构220上方的区域上形成金属块800。金属块800的厚度介于0.5~10μm,金属块800的厚度优选为1~3μm,在本实施例中,金属块800的制备材料可与第一焊盘700和第二焊盘710相同。此步骤可得到图4所示的倒装发光二极管。
根据本申请的一个方面,提供一种发光装置,该发光装置可以是照明用装置、背光装置、显示装置,例如灯具、电视、手机、面板,或者可以是RGB显示屏。发光装置包括上述实施例中的倒装发光二极管,上述倒装发光二极管以数百颗或者数千颗或者数万颗的数量集成式的安装在应用基板或者封装基板上,形成发光光源部分。
由以上的技术方案可知,本申请在倒装发光二极管的中心区域处形成半导体岛结构220,该半导体岛结构220与半导体发光单元210之间存在沟槽,且不用于倒装发光二极管的导电发光过程;半导体岛结构220所在区域作为顶针的作用区域,在顶针作用在上述区域时,顶针所刺破或顶破保护层600的裂缝仅延伸至半导体岛结构220的上表面或者侧壁周围,在一定程度上可避免裂缝直接传递到半导体发光单元210处的保护层600上,从而避免倒装发光二极管因半导体发光单元210处的保护层600被刺破或者顶破而出现的漏电失效现象,提高倒装发光二极管的可靠性。
实施例
5
根据本发明的第二方面,作为实施例2的一种变形,本实施例提供一种高压倒装发光二极管。图13为该倒装发光二极管的俯视图,图14为图13的A-A截面示意图。
该倒装发光二极管包括衬底100、形成在衬底100上的至少两个半导体发光单元。多个半导体发光单元按照预设方向排列且间隔布置,相邻半导体发光单元之间电性连接。如图所示,包括第一、第二半导体发光单元210a,210b。第一、第二半导体发光单元210a,210b,位于所述衬底100上,为半导体堆叠层,半导体堆叠层包括第一半导体层201、发光层202和第二半导体层203;第一、第二半导体发光单元之间210a,210b具有沟槽230,沟槽230的底部位于衬底100上。
所述的第一半导体发光单元210a的半导体堆叠层具有局部的凸部210a1,所述的第二半导体发光单元210b的半导体堆叠层具有局部的凹部。
凸部210a1位于第一半导体发光单元210a的半导体堆叠层的一个边缘上,沿着平行于倒装发光二极管的一个侧边延伸的方向量测第一半导体发光单元210a半导体堆叠层的宽度,凸部210a1使第一半导体发光单元210a整个半导体堆叠层的宽度加宽。
凸部210a1位于所述的倒装发光二极管的中心区域,此处倒装发光二极管的中心区域为平面图或者水平摆放所述的发光二极管的俯视图的中心区域。
保护层600覆盖每个半导体发光单元的上方和侧壁、包括凸部210a1的上方和侧壁、以及凸部210a1与相邻半导体发光单元之间的沟槽230。
当转移用的装置的顶针作用到蓝膜等柔性材料支撑的倒装发光二极管以将其转移离开至其它的装置或者基板上,例如应用基板上,顶针会作用到第一焊盘700和第二焊盘710之间的凸部210a1的保护层600上。相较于倒装发光二极管因半导体发光单元210之间的沟槽作为作用区域,引起保护层600刺破或者顶破而出现的漏电失效的风险,凸部所提供的平整的表面会降低顶针刺破或顶破保护层600产生裂缝的风险降低,提高倒装发光二极管的可靠性。
另外,虽然相对于实施例2的设计该凸部设计会导致绝缘层破裂的风险高一些,但是该凸部210a1在通电的情况下可以发光,凸部210a1的设计对光效的损失降低。进一步的,所述的互连电极也可以避开凸部210a1设计,对互连电极的宽度可以更窄,降低吸光的影响。
半导体发光单元210的数量为奇数或者偶数,半导体发光单元210的数量优选为偶数,并且半导体发光单元沿着一个直线方向排列的。
第一半导体发光单元210a的凸部210a1厚度等于半导体发光单元210a的半导体堆叠层的最大厚度,凸部210a1的底部为半导体堆叠层的底部,凸部210a1的顶部是半导体堆叠层(也就是第二半导体层)的顶部。
半导体堆叠层包括有第一半导体层201、有源层202和第二半导体层203;第一半导体层201为N型半导体层,有源层202为多层量子阱层,其可提供蓝光、绿光或者红光的辐射,也可以提供紫外或者红外的辐射,第二半导体层203为P型半导体层。N型半导体层、多层量子阱层、P型半导体层仅是半导体堆叠层发光所必需的基本构成单元,在此基础上,半导体堆叠层还可以包括其他对倒装发光二极管的性能具有优化作用的功能结构层。
半导体发光单元210厚度为3~10μm。
凸部210a1位于第一半导体发光单元210a的边缘上,凸部210a1的上表面(也就是第二半导体层的上表面)的宽度至少是30μm。也就是,为了设计该第一半导体发光单元的凸部,使得所述第一半导体发光单元的宽度相对于其它位置的宽度至少加宽了30微米(在平行于倒装发光二极管的一个边的方向上量取)。较佳地,凸部210a1上表面的宽度根据目前的顶针尺寸实施,半导体岛结构220上表面的宽度至少为50μm,至多是100μm。
由于所述的凸部使得第一半导体发光单元的边缘水平朝向第二半导体发光单元加宽设计,因此相邻的第二半导体发光单元的半导体堆叠层的边缘内凹。所述的第二半导体发光单元的边缘与所述的凹部与所述的凸部相配合设计。
内凹使得所述的第二半导体发光单元的半导体发光叠层的总体宽度局部变窄。
优选的,从图13的俯视图上看,所述的凸部210a1的边缘是非直线型,所述的凹部的边缘也为非直线型。例如所述的凸部的边缘是弧形或者多条线段连接。
第二半导体发光单元210b设置有第一电极500,第一电极500与该半导体发光单元210中的第一半导体层201电性连接。
第一半导体发光单元210a设置有第二电极510。每一半导体发光单元中,第二半导体层203上形成有透明导电层400,透明导电层400包括但不限于是氧化铟锡层。第二电极510位于透明导电层400下方,透明导电层400下方可以有电流阻挡层300。电流阻挡层300同时位于第二电极510下方,以阻挡电流垂直传输,促进电流扩展。
作为一个替代性实施例,透明导电层400可以包括有开口,且开口暴露出部分第二半导体层2,第二电极穿过开口与第二半导体层接触。第二电极510包括块状部分(宽度比条状部分宽)以及自块状部分延伸出去的至少一条条状部分,第二电极510包括块状的一部分或者条状的一部分通过透明导电层400中的开口与第二半导体层203接触,以改善第二电极510的附着性。
相邻的两个半导体发光单元210通过互连电极520电性连接,具体地,在每相邻的两个半导体发光单元210中,第一半导体发光单元210a包括有上述透明导电层400,透明导电层400位于第二半导体层203上方的电流阻挡层300上,互连电极520自第一半导体发光单元210a中的透明导电层400延伸跨过沟槽至第二半导体发光单元210b中的第一半导体层201上。互连电极520与沟槽内的第一半导体发光单元210a的侧壁、第二半导体发光单元210b的侧壁之间以及沟槽底部之间由电流阻挡层300。
作为一个实施例,透明电极层400延伸至凸部210a1的上表面,并且互连电极520位于凸部210a1上表面上方的透明电极层400上延伸至第二半导体发光单元210b的第一半导体层上,为了实现顶针作用的区域平整,互连电极520的宽度至少30微米,并且互连电极520为金属结构,可以对顶针的作用起到一定的缓冲作用。
作为一个更佳的实施例,如图13~14所示,所述的透明电极层400延伸至凸部的上表面,互连电极520不位于凸部210a1的上方,互连电极520避开凸部210a1设计,例如所述的互连电极520位于凸部210a1的一侧或者两侧,由此互连电极可以做到更窄,减少吸光。
第一焊盘700位于保护层600上并穿过保护层600与其中一个半导体发光单元(例如第一半导体发光单元210a)电性连接,第二焊盘710位于保护层600上并穿过保护层600与另外一个半导体发光单元(例如第二半导体发光单元210b)电性连接。
保护层600分别设有位于第一电极500、第二电极510上方的通孔,第一焊盘700、第二焊盘710位于保护层600上,并分别通过上述通孔与第一电极500、第二电极510连接。
较佳地,沟槽在底部的宽度
W
1
大于等于3μm。
第一电极500、第二电极510和互连电极520为金属电极,可包括黏附层、反射层和阻挡层,其中,黏附层为铬层或者钛层,反射层为铝层,阻挡层为钛层和铂层组成的重复叠层。
以上所述仅是本申请的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本申请技术原理的前提下,还可以做出若干改进和替换,这些改进和替换也应视为本申请的保护范围。
Claims (37)
- 一种倒装发光二极管,其特征在于,包括衬底和位于衬底上的半导体堆叠层,半导体堆叠层包括至少一个半导体发光单元和一个岛结构,沟槽位于半导体发光单元与岛结构之间。
- 根据权利要求1所述的倒装发光二极管,其特征在于,沟槽的底部位于部分厚度的半导体堆叠层上。
- 根据权利要求1所述的倒装发光二极管,其特征在于:在所述倒装发光二极管处于通电状态时,所述半导体岛结构不发光。
- 根据权利要求1所述的倒装发光二极管,其特征在于,从倒装发光二极管厚度方向的剖面图上看,半导体堆叠层包括第一半导体层、发光层和第二半导体层,所述的沟槽的底部低于发光层。
- 根据权利要求1所述的倒装发光二极管,其特征在于:沟槽的底部位于衬底上。
- 根据权利要求1所述的倒装发光二极管,其特征在于,所述半导体岛结构位于该倒装发光二极管的中心区域。
- 根据权利要求1所述的倒装发光二极管,其特征在于,所述半导体岛结构的上表面的宽度至少是30μm。
- 根据权利要求1所述的倒装发光二极管,其特征在于,所述半导体岛结构的上表面形状是圆形或者多边形。
- 根据权利要求1所述的倒装发光二极管,其特征在于,所述半导体岛结构的高度小于等于所述半导体发光单元的高度。
- 根据权利要求1所述的倒装发光二极管,其特征在于,还包括金属块,所述金属块位于所述半导体岛结构的上方。
- 根据权利要求10所述的倒装发光二极管,其特征在于,所述金属块直接与所述半导体岛结构的上表面接触。
- 根据权利要求10所述的倒装发光二极管,其特征在于,所述金属块的厚度介于0.5~10μm。
- 根据权利要求10所述的倒装发光二极管,其特征在于,还包括保护层,所述保护层至少覆盖所述半导体岛结构的上表面和侧壁。
- 根据权利要求13所述的倒装发光二极管,其特征在于,所述保护层位于所述金属块与所述半导体岛结构之间,或者,所述保护层位于所述金属块的上方。
- 根据权利要求13或14所述的倒装发光二极管,其特征在于,还包括第一焊盘和第二焊盘;所述保护层覆盖的区域还包括所述半导体发光单元的上表面和侧壁;所述半导体发光单元包括第一半导体层、有源层和第二半导体层;所述第一焊盘位于所述保护层上,并穿过所述保护层与所述半导体发光单元中的第一半导体层电性连接,所述第二焊盘位于所述保护层上,并穿过所述保护层与所述半导体发光单元中的第二半导体层电性连接。
- 根据权利要求15所述的倒装发光二极管,其特征在于,所述第一焊盘和第二焊盘均未在所述金属块的上方。
- 根据权利要求1所述的倒装发光二极管,其特征在于,所述半导体发光单元的数量为1个。
- 根据权利要求17所述的倒装发光二极管,其特征在于,所述半导体发光单元环绕于所述半导体岛结构的***。
- 根据权利要求1所述的倒装发光二极管,其特征在于,所述半导体发光单元的数量为多个,且多个所述半导体发光单元间隔布置;所述半导体发光单元的数量为奇数个或者偶数个。
- 根据权利要求19所述的倒装发光二极管,其特征在于,所述半导体岛结构位于相邻半导体发光单元之间。
- 根据权利要求19所述的倒装发光二极管,其特征在于,所述半导体岛结构位于该倒装发光二极管中心区域处的相邻半导体发光单元之间。
- 根据权利要求19所述的倒装发光二极管,其特征在于,相邻所述半导体发光单元之间电性连接。
- 根据权利要求1所述的倒装发光二极管,其特征在于,所述半导体岛结构与半导体发光单元之间的所述沟槽的宽度自下而上递增。
- 一种倒装发光二极管,其特征在于,包括:衬底;第一、第二半导体发光单元,位于所述衬底上,为半导体堆叠层,半导体堆叠层包括第一半导体层、发光层和第二半导体层;沟槽,位于相邻的第一、第二半导体发光单元的半导体堆叠层之间,并且沟槽底部位于衬底上;所述的第一半导体发光单元的半导体堆叠层具有局部的凸部。
- 根据权利要求24所述的倒装发光二极管,其特征在于:所述的第二半导体发光单元的半导体堆叠层局部内凹。
- 根据权利要求24所述的倒装发光二极管,其特征在于:所述凸部和所述凹部使沟槽在相邻半导体发光单元之间为非直线型水平延伸。
- 根据权利要求24所述的倒装发光二极管,其特征在于:所述凸部位于所述的倒装发光二极管的中心区域。
- 根据权利要求24所述的倒装发光二极管,其特征在于,所述凸部的宽度至少是30μm。
- 根据权利要求25所述的倒装发光二极管,其特征在于,所述的凸部与所述的凹部相配合设计。
- 根据权利要求24所述的倒装发光二极管,其特征在于,所述的凸部的边缘是非直线型。
- 根据权利要求24所述的倒装发光二极管,其特征在于,所述的凸部的边缘是弧形或者多条线段连接。
- 根据权利要求24所述的倒装发光二极管,其特征在于,所述凸部的厚度等于所述半导体堆叠层的总厚度。
- 根据权利要求24所述的倒装发光二极管,其特征在于,还包括互连电极,互连电极连接第一半导体发光单元和第二半导体发光单元。
- 根据权利要求31所述的倒装发光二极管,其特征在于,所述的互连电极位于凸部之上。
- 根据权利要求31所述的倒装发光二极管,其特征在于,所述的互连电极位于凸部之上。
- 根据权利要求31所述的倒装发光二极管,其特征在于,所述的互连电极不位于所述的凸部上方。
- 一种发光装置,其特征在于,包括如权利要求1~36中任一项所述的倒装发光二极管。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105702811A (zh) * | 2014-12-16 | 2016-06-22 | 晶元光电股份有限公司 | 发光元件 |
CN109728140A (zh) * | 2018-12-28 | 2019-05-07 | 映瑞光电科技(上海)有限公司 | 一种高压倒装led芯片及其形成方法 |
US20210066390A1 (en) * | 2019-08-30 | 2021-03-04 | Epistar Corporation | Light-emitting device and manufacturing method thereof |
CN213093223U (zh) * | 2020-11-12 | 2021-04-30 | 无锡新仕嘉半导体科技有限公司 | 一种降低倒装高压led固晶失效的结构及led芯片 |
CN113903836A (zh) * | 2021-09-07 | 2022-01-07 | 厦门三安光电有限公司 | 倒装发光二极管和发光装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN105702811A (zh) * | 2014-12-16 | 2016-06-22 | 晶元光电股份有限公司 | 发光元件 |
CN109728140A (zh) * | 2018-12-28 | 2019-05-07 | 映瑞光电科技(上海)有限公司 | 一种高压倒装led芯片及其形成方法 |
US20210066390A1 (en) * | 2019-08-30 | 2021-03-04 | Epistar Corporation | Light-emitting device and manufacturing method thereof |
CN213093223U (zh) * | 2020-11-12 | 2021-04-30 | 无锡新仕嘉半导体科技有限公司 | 一种降低倒装高压led固晶失效的结构及led芯片 |
CN113903836A (zh) * | 2021-09-07 | 2022-01-07 | 厦门三安光电有限公司 | 倒装发光二极管和发光装置 |
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