WO2023071311A1 - 一种半导体生长设备及其工作方法 - Google Patents

一种半导体生长设备及其工作方法 Download PDF

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Publication number
WO2023071311A1
WO2023071311A1 PCT/CN2022/106856 CN2022106856W WO2023071311A1 WO 2023071311 A1 WO2023071311 A1 WO 2023071311A1 CN 2022106856 W CN2022106856 W CN 2022106856W WO 2023071311 A1 WO2023071311 A1 WO 2023071311A1
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gas source
pipeline
sub
heating zone
semiconductor growth
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PCT/CN2022/106856
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English (en)
French (fr)
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王俊
程洋
肖啸
郭银涛
苟于单
Original Assignee
苏州长光华芯光电技术股份有限公司
苏州长光华芯半导体激光创新研究院有限公司
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Application filed by 苏州长光华芯光电技术股份有限公司, 苏州长光华芯半导体激光创新研究院有限公司 filed Critical 苏州长光华芯光电技术股份有限公司
Priority to EP22808923.1A priority Critical patent/EP4194584A4/en
Priority to JP2022577270A priority patent/JP2024503166A/ja
Publication of WO2023071311A1 publication Critical patent/WO2023071311A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

Definitions

  • the present application relates to the field of semiconductor technology, in particular to a semiconductor growth device and a working method thereof.
  • MOCVD metal-organic chemical vapor deposition
  • MBE molecular beam epitaxy
  • the technical problem to be solved in the present application is to overcome the problems in the prior art that the optimum growth temperature range of the semiconductor growth equipment is relatively high and the application range is narrow, so as to provide a semiconductor growth equipment and its working method.
  • the present application provides a semiconductor growth equipment, including: a reaction chamber; a heating base located in the reaction chamber, the heating base includes a first heating zone and a second heating zone located around the side of the first heating zone Two heating zones, the heating temperature of the first heating zone is higher than the heating temperature of the second heating zone, and the surface of the second heating zone is suitable for placing substrates; the first heating zone located at the top of the reaction chamber a spray unit and a second spray unit, the second spray unit is located around the side of the first spray unit, and the first spray unit is located above the first heating zone, the The second spray unit is located above the second heating zone; the first spray unit includes at least a first pipeline, the first pipeline is suitable for passing into the first gas source, and the second spray unit At least a second pipeline is included, the second pipeline is suitable for passing a second gas source, and the decomposition temperature of the first gas source is higher than the decomposition temperature of the second gas source.
  • it further includes: a first flow regulator arranged on the transmission path of the first pipeline; a second flow regulator arranged on the transmission path of the second pipeline.
  • it further includes: a spacer disposed on the top of the reaction chamber and between the first spray unit and the second spray unit.
  • the heating base includes: a first sub-base, the first sub-base includes a central area and an edge area surrounding the central area, at least a top of the central area is provided with a receiving groove;
  • a heat insulating member is provided between the second sub-base and the first sub-base.
  • the accommodating groove is located in the top of the central region; the semiconductor growth equipment further includes: a rotation shaft fixed to the first sub-mount below the second sub-mount.
  • the accommodating groove runs through the central area, the accommodating groove includes a first sub-groove area and a second sub-groove area located above the first sub-groove area, the lateral direction of the second sub-groove area The size is larger than the lateral dimension of the first sub-slot area, the heat insulating member is arranged on the bottom of the second sub-slot area, and the heat insulating member is located around the first sub-slot area.
  • the containing tank further includes: a third sub-tank area located below the second sub-tank area;
  • the semiconductor growth equipment further includes: a fixing pin located in the third sub-tank area, the The fixing pin is fixed to the first sub-base at the side of the third sub-slot area; the rotating shaft is located below the fixing pin and connected to the fixing pin.
  • the fixing pins are insulating fixing pins.
  • the distance between the first spray unit and the first heating zone is 8mm-20mm; the distance between the second spray unit and the second heating zone is 8mm-20mm.
  • the material of the heating base includes graphite or molybdenum.
  • the first spray unit further includes a third pipeline spaced apart from the first pipeline, and the third pipeline is suitable for passing into a third gas source, and the third gas source
  • the group source type of the gas source is the same as that of the second gas source, and the flow rate suitable for passing into the third gas source in the third pipeline is smaller than that suitable for passing into the first gas source in the first pipeline
  • the second spray unit also includes a fourth pipeline spaced apart from the second pipeline, the fourth pipeline is suitable for passing into the fourth gas source, the fourth gas source
  • the family source type is the same as that of the first gas source, and the flow rate suitable for passing into the fourth gas source in the fourth pipeline is smaller than that suitable for passing into the second gas source in the second pipeline. flow.
  • the first gas source includes a Group V gas source
  • the fourth gas source includes a Group V gas source
  • the second gas source includes a Group III gas source
  • the third gas source includes a Group III gas source source.
  • the decomposition temperature of the first gas source is greater than or equal to the decomposition temperature of the fourth gas source.
  • it further includes: a third flow regulator arranged on the transmission path of the third pipeline; a fourth flow regulator arranged on the transmission path of the fourth pipeline.
  • it also includes: the first transitional heating zone to the Nth transitional heating zone between the first heating zone and the second heating zone; the first transitional heating zone between the first spraying unit and the second spraying unit Spray unit to Nth transitional spraying unit; N is an integer greater than or equal to 1; the kth transitional spraying unit is located above the kth transitional heating zone, and k is an integer greater than or equal to 1 and less than or equal to N.
  • a first radio frequency unit located below the first heating zone a second radio frequency unit located below the second heating zone; the radio frequency power of the first radio frequency unit is greater than that of the second radio frequency The RF power of the unit.
  • the present application also provides a working method of semiconductor growth equipment, including: placing a substrate on the surface of the second heating zone; after placing the substrate on the surface of the second heating zone, The first gas source is passed into the pipeline, and the second gas source is passed into the second pipeline.
  • the second gas source is decomposed into the second decomposed gas above the second heating zone.
  • the first gas source is in the The upper part of the first heating zone is decomposed into the first decomposed gas; the first decomposed gas is transported to the upper part of the second heating zone; the second decomposed gas above the second heating zone reacts with the first decomposed gas to A film layer is grown on the surface of the substrate.
  • the first spray unit further includes a third pipeline spaced apart from the first pipeline; the second spray unit further includes a fourth pipe spaced apart from the second pipeline
  • the working method of the semiconductor growth equipment further includes: while passing the first gas source into the first pipeline, it is suitable to pass a third gas source into the third pipeline, and the first The group source type of the three gas sources is the same as the group source type of the second gas source, and the flow rate of the third gas source passed into the third pipeline is smaller than that of the first gas passed into the first pipeline.
  • the heating base is rotated around the central axis of the heating base.
  • the heating base includes a first heating zone and a second heating zone located around the side of the first heating zone, and the heating temperature of the first heating zone is higher than that of the The heating temperature of the second heating zone; the surface of the second heating zone is suitable for placing a substrate; the first spray unit and the second spray unit at the top of the reaction chamber, the second spray The unit is located around the side of the first spray unit, and the first spray unit is located above the first heating zone, and the second spray unit is located above the second heating zone;
  • the first spray unit includes at least a first pipeline, the first pipeline is suitable for passing through the first gas source, and the second spray unit includes at least a second pipeline, and the second pipeline is suitable for A second gas source is introduced, and the decomposition temperature of the first gas source is higher than the decomposition temperature of the second gas source.
  • the second gas source is decomposed into a second decomposed gas above the second heating zone. Because the heating temperature of the first heating zone is higher than the heating temperature of the second heating zone, the first heating zone can promote the decomposition of the first gas source on the surface of the first heating zone, and the first gas source is mainly heated in the first heating zone.
  • the surface of the zone decomposes into a first decomposed gas.
  • the first decomposed gas moves to the surface of the substrate with the air flow and reacts with the second decomposed gas, so the first decomposed gas and the second decomposed gas can react in the second heating zone with a lower temperature to obtain a film with better quality , so the optimal growth temperature range of semiconductor growth equipment is reduced, expanding the scope of use.
  • the first gas source is suitable for entering the reaction chamber from above the first heating zone
  • the second gas source is suitable for entering the reaction chamber from above the second heating zone. Therefore, between the first gas source and the second Before the gas source reaches the substrate surface, most of the second gas source and the first gas source will not be mixed in advance, thereby reducing pre-reaction and improving the utilization rate of materials.
  • the first flow regulator is used to adjust the flow of the first gas source fed into the first pipeline, so that the flow of the first gas source into the reaction chamber can be selectively adjusted.
  • the second flow regulator is used to adjust the flow of the second gas source fed into the second pipeline, so that the flow of the second gas source into the reaction chamber can be selectively adjusted.
  • the first spray unit further includes a third pipeline, which is suitable for feeding a third gas source, and the type of the third gas source is the same as that of the second gas source.
  • the source types are the same, and the flow rate suitable for passing into the third gas source in the third pipeline is smaller than the flow rate suitable for passing into the first gas source in the first pipeline.
  • the second spray unit also includes a fourth pipeline, which is suitable for passing into a fourth gas source, and the type of the gas source of the fourth gas source is the same as that of the gas source of the first gas source.
  • the types are the same, the flow rate suitable for passing into the fourth gas source in the fourth pipeline is smaller than the flow rate suitable for passing into the second gas source in the second pipeline.
  • the function of the third pipeline includes: controlling the gas flow field of the reaction chamber by adjusting the total gas flow of the third pipeline.
  • the function of the fourth pipeline includes: controlling the gas flow field of the reaction chamber by adjusting the total gas flow of the fourth pipeline.
  • it further includes: a third flow regulator arranged on the transmission path of the third pipeline; a fourth flow regulator arranged on the transmission path of the fourth pipeline.
  • the third flow regulator is used to adjust the flow of the third gas source fed into the third pipeline, so that the flow of the third gas source into the reaction chamber can be selectively adjusted.
  • the fourth flow regulator is used to adjust the flow of the fourth gas source fed into the fourth pipeline, so that the flow of the fourth gas source into the reaction chamber can be selectively adjusted.
  • it further includes: a spacer disposed on the top of the reaction chamber and between the first spray unit and the second spray unit.
  • the spacer is used to prevent the mixing of the first spray unit and the second spray unit inside the shower head.
  • a heat insulating member is provided between the second sub-base and the first sub-base.
  • the thermal insulation is used to prevent the heat of the second sub-base from spreading to the first sub-base, and can form a stable temperature difference between the second sub-base and the first sub-base.
  • FIG. 1 is a schematic structural diagram of a semiconductor growth device provided by an embodiment of the present application.
  • FIG. 2 is a schematic structural diagram of a semiconductor growth device provided by another embodiment of the present application.
  • Fig. 3 is a schematic diagram of a heating base, a thermal insulation member, a rotating shaft, a fixing pin, a first radio frequency unit, and a second radio frequency unit in a semiconductor growth device provided by another embodiment of the present application;
  • FIG. 4 is a flow chart of the working method of the semiconductor growth equipment provided by the embodiment of the present application.
  • MOCVD reaction chambers There are three main types of MOCVD reaction chambers, which are planetary air cushion rotating horizontal reaction chambers, high-speed rotating disk reaction chambers, and close-coupled spray reaction chambers.
  • the Group III reaction gas source and the Group V reaction gas source enter the reaction chamber from the three-laminar flow nozzle on the upper cover respectively, and pass through the grid
  • the grid is forced to turn and flow radially toward the outer edge in a 360-degree annular space between the base on which the substrate is placed and the ceiling, and flows out through the perforated quartz side ring, wherein the base is a graphite base, and the ceiling is Quartz canopy or graphite canopy.
  • the upper and lower layers of the three-laminar flow nozzle use the Group V reaction gas source, the middle layer uses the Group III reaction gas source, and the center of the upper cover has a water cooling unit, which is beneficial to suppress the pre-reaction.
  • the rotation (revolution) of the base is directly driven by a magnetic fluid sealed shaft, while the graphite planetary turntable is driven by air cushion rotation technology.
  • the substrate revolves with the base and rotates with the graphite planetary turntable, which realizes the planetary rotation of substrate rotation and revolution, thereby obtaining a uniform growth rate on the entire substrate surface and improving the uniformity between sheets.
  • the reaction gas source is injected from the specially designed airflow flange nozzle on the top, the base rotates at high speed (rotating speed is 700r/min-1500r/min), and the tail gas flows out from the lower part.
  • the pump effect generated by the high-speed rotation of the base is used to suppress the thermal convection vortex easily caused by the large distance between the nozzle and the base in the vertical reaction chamber. This pumping effect is the result of the combination of the viscous force of the fluid and the centrifugal force generated by the rotation.
  • Hydride and metal-organic (MO) sources can be injected through the nozzle of the air flow flange, and the MO source can be divided into three injection areas, inner, middle and outer, which can be adjusted independently to enter the reaction chamber to improve the uniformity of the growth layer .
  • the gas outlet flow rate of different nozzles can be matched to avoid vortex.
  • the characteristic of the close-coupled spray reaction chamber is that the distance between the spray head of the reaction gas source and the base is as small as 10mm-20mm. From a hydrodynamic point of view, shortening the distance between the sprinkler head and the base is beneficial to suppress the formation of vortices above the base. However, if the distance is reduced, the surface of the shower head will be heated and radiated to cause high temperature and deposition, so it must be cooled.
  • the shower head is composed of many stainless steel pipes (nozzles) with an inner diameter of 0.6mm regularly arranged, and the density of the nozzles reaches 15.5/cm 2 .
  • the distance between the nozzle holes should be so small that the Group III reactant gas source and the Group V reactant gas source respectively injected from two sets of alternate nozzle holes can fully mix before reaching the susceptor through a short distance.
  • the total area of the sprinkler including the orifices is large enough to cover the entire base.
  • the shower head evenly distributes the reaction gas above the substrate on the surface of the base, so that the concentration of the reaction gas reaching each point on the substrate is basically the same, forming a boundary layer with uniform thickness, thereby obtaining a uniform epitaxial layer.
  • reaction chambers can all obtain uniform epitaxial layers by virtue of their unique designs. Based on the design of the gas flow field in the reaction chamber, a part or even all of the Group III reaction gas source and the Group V reaction gas source need to reach the center of the susceptor first, and then flow toward the edge of the susceptor along the diameter of the susceptor.
  • these three reaction chambers are generally designed to minimize the temperature difference along the diameter of the susceptor, that is, the temperature at the center of the susceptor is basically the same as the temperature at the edge of the susceptor, so the cracking of the material basically occurs above the susceptor.
  • the molar flow rate of the V-group reactant gas source passed into the reaction chamber is usually higher than the molar flow rate of the III-group reactant gas source.
  • the ratio is usually between ten and ten thousand.
  • the three devices Due to the design concepts of the three reaction chambers, the three devices have only a narrow growth temperature range. Specifically, the temperature of the base should not be too high, otherwise the high-strain thin-layer material will relax due to high temperature. , but the growth temperature of the pedestal should not be too low, otherwise, the reactant gas source, especially the V-group reactant gas source, will not be thermally decomposed effectively before reaching the substrate on the surface of the pedestal, resulting in the loss of the V-group reactant gas source actually participating in the reaction. Insufficient quantity will reduce the growth quality.
  • the narrow growth temperature range especially the inability to grow materials at lower temperatures, severely limits the types of materials grown by MOCVD.
  • the inventor invented a semiconductor growth equipment through hard practice. Through special design, the optimum growth temperature range of the semiconductor growth equipment is effectively reduced, and many products that can only be grown at low temperatures can be grown. materials, expanding the scope of use of semiconductor growth equipment.
  • the core of the improvement of semiconductor growth equipment is to deliberately set up dual temperature zones inside the reaction chamber, so that the gas source enters the reaction chamber and first decomposes at high temperature, and then transports it to the substrate surface for low-temperature growth.
  • FIG. 1 An embodiment of the present application provides a semiconductor growth equipment, please refer to FIG. 1, including:
  • the first spraying unit 121 includes at least a first pipeline 1211, and the first pipeline 1211 is suitable for passing through a first gas source;
  • the second spraying unit 122 includes at least a second pipeline 1221, and the first The second pipeline 1221 is adapted to lead into a second gas source, and the decomposition temperature of the first gas source is higher than the decomposition temperature of the second gas source.
  • the semiconductor growth equipment is used for metal-organic chemical vapor deposition.
  • the second gas source is decomposed into the second decomposed gas above the second heating zone. Because the heating temperature of the first heating zone is higher than the heating temperature of the second heating zone, the first heating zone can promote the decomposition of the first gas source on the surface of the first heating zone, and the first gas source is mainly heated in the first heating zone.
  • the surface of the zone decomposes into a first decomposed gas.
  • the first decomposed gas moves to the surface of the substrate C with the air flow to react with the second decomposed gas, so the first decomposed gas and the second decomposed gas can react in the second heating zone with a lower temperature to obtain a film with better quality Layer, so the optimal growth temperature range of semiconductor growth equipment is reduced, expanding the scope of use.
  • the first gas source is suitable for entering the reaction chamber from above the first heating zone
  • the second gas source is suitable for entering the reaction chamber from above the second heating zone. Therefore, between the first gas source and the second Before the gas source reaches the substrate surface, most of the second gas source and the first gas source will not be mixed in advance, thereby reducing pre-reaction and improving the utilization rate of materials.
  • the first spray unit 121 is only located above the first heating zone, and the second spray unit 122 is only located above the second heating zone.
  • the first spray unit 121 is located above the first heating zone
  • the second spray unit 122 is located above the second heating zone
  • the first The spray unit is mainly located directly above the first heating zone, and part of the first spray unit is also located above part of the second heating zone, and the second spray unit is mainly located directly above the second heating zone, and part of the second spray unit is also located above the second heating zone.
  • the shower unit is also located above part of the first heating zone.
  • the semiconductor growth equipment further includes: a first flow regulator (not shown) arranged on the transmission path of the first pipeline 1211; a second flow regulator arranged on the transmission path of the second pipeline 1221 (not shown).
  • the first flow regulator is used to adjust the flow of the first gas source passing through the first pipeline 1211 , so that the flow of the first gas source entering the reaction chamber 100 can be selectively adjusted.
  • the second flow regulator is used to adjust the flow of the second gas source passing through the second pipeline 1221 , so that the flow of the second gas source entering the reaction chamber 100 can be selectively adjusted.
  • the second heating zone surrounds the side of the first heating zone, and the second spraying units 122 are evenly distributed along the circumference of the first spraying unit 121 .
  • the first spray unit 121 also includes a third pipeline 1212 spaced apart from the first pipeline 1211, and the third pipeline 1212 is suitable for feeding a third gas source, and the third gas source
  • the type of gas source is the same as that of the second gas source, and the flow rate suitable for passing into the third gas source in the third pipeline 1212 is smaller than that in the first pipeline 1211 suitable for passing into the first gas source. The flow rate of the air source.
  • the second spray unit 122 also includes a fourth pipeline 1222 spaced apart from the second pipeline 1221, and the fourth pipeline 1222 is suitable for passing into a fourth gas source, and the fourth gas source
  • the gas group source type is the same as that of the first gas source, and the flow rate suitable for passing into the fourth gas source in the fourth pipeline 1222 is smaller than the flow rate suitable for passing into the second gas source in the second pipeline 1221. The flow rate of the air source.
  • the function of the third pipeline 1212 includes: adjusting the gas flow field distribution of the reaction chamber and the concentration distribution of the gas source in the inner space of the reaction chamber.
  • the function of the fourth pipeline 1222 includes: adjusting the gas flow field distribution of the reaction chamber and the concentration distribution of the gas source in the inner space of the reaction chamber.
  • the distance between the first pipeline 1211 and the third pipeline 1212 is 5mm-30mm.
  • the distance between the second pipeline 1221 and the fourth pipeline 1222 is 5mm-30mm.
  • the first shower unit 121 only includes the first pipeline 1211 and the third pipeline 1212
  • the second shower unit 122 only includes the second pipeline 1221 and the fourth pipeline 1222 .
  • first shower unit only includes the first pipeline
  • second shower unit only includes the second pipeline
  • first spray unit may further include more pipelines
  • second spray unit may further comprise more pipelines
  • the first gas source includes a Group V gas source
  • the fourth gas source includes a Group V gas source
  • the second gas source includes a Group III gas source
  • the third gas source includes a Group III gas source.
  • first gas source and the fourth gas source may also be other gas sources, and the second gas source and the third gas source may also be other gas sources.
  • the decomposition temperature of the first gas source is greater than or equal to the decomposition temperature of the fourth gas source.
  • the decomposition temperature of the first gas source is equal to the decomposition temperature of the fourth gas source, and the material of the first gas source can be selected to be the same as that of the fourth gas source, for example, the material of the first gas source is arsine (AsH 3 ), the material of the fourth gas source is arsine (AsH 3 ).
  • the decomposition temperature of the first gas source is greater than the decomposition temperature of the fourth gas source, and the material of the first gas source is different from that of the fourth gas source, for example, the material of the first gas source is arsine ( AsH 3 ), the material of the fourth gas source is tert-butyl arsenic (TBAs).
  • the decomposition temperature of the first gas source is higher than the decomposition temperature of the fourth gas source, which further improves the utilization efficiency of the Group V gas source and reduces the background carrier concentration of the material.
  • the semiconductor growth equipment further includes: a third flow regulator (not shown) arranged on the transmission path of the third pipeline 1212; a fourth flow regulator arranged on the transmission path of the fourth pipeline 1222 (not shown).
  • the third flow regulator is used to adjust the flow of the third gas source passing through the third pipeline 1212 , so that the flow of the third gas source entering the reaction chamber 100 can be selectively adjusted.
  • the fourth flow regulator is used to adjust the flow of the fourth gas source passing through the fourth pipeline 1222 , so that the flow of the fourth gas source entering the reaction chamber 100 can be selectively adjusted.
  • the semiconductor growth equipment further includes: an isolation chamber disposed on the top of the reaction chamber 100 and between the first shower unit 121 and the second shower unit 122 140 pieces.
  • the function of the spacer 140 includes: preventing the first shower unit 121 and the second shower unit 122 from mixing inside the shower head.
  • the material of the spacer 140 includes stainless steel.
  • the spacer 140 is annular in shape.
  • the material of the heating base 110 includes graphite or molybdenum.
  • the heating base 110 includes: a first sub-base 1101, the first sub-base 1101 includes a central area and an edge area around the central area, the first sub-base 1101 At least the top of the central area is provided with a receiving groove 1103, specifically, the receiving groove 1103 is located in the top of the central area of the first sub-base 1101; the second sub-base 1102 located in the receiving groove 1103; The second sub-mount 1102 constitutes the first heating zone, and the first sub-mount 1101 located on the side of the second sub-mount 1102 constitutes the second heating zone.
  • the material of the first sub-mount 1101 is graphite, and the material of the second sub-mount 1102 is graphite. In other embodiments, the material of the first sub-mount 1101 is molybdenum, and the material of the second sub-mount 1102 is molybdenum.
  • the semiconductor growth equipment further includes: a rotating shaft fixed to the bottom of the heating base 110 , and the rotating shaft is used to drive the heating base 110 to rotate around the central axis of the heating base 110 .
  • the rotation shaft is fixed to the first sub-base 1101 below the second sub-base 1102 .
  • the rotational speed of the rotating shaft is 10 to 120 revolutions per minute.
  • the semiconductor growth equipment further includes: a first radio frequency unit 131 located below the first heating zone; a second radio frequency unit 132 located below the second heating zone; the first radio frequency unit 131
  • the radio frequency power of the radio frequency unit 132 is greater than the radio frequency power of the second radio frequency unit 132 .
  • the first radio frequency unit 131 heats the first heating area by induction current
  • the second radio frequency unit 132 heats the second heating area by induction current.
  • the radio frequency power of the first radio frequency unit 131 and the radio frequency power of the second radio frequency unit 132 can be controlled independently.
  • the heating base includes: a first sub-base 1101a and a second sub-base 1102a, the first sub-base 1101a includes a central area and an edge area surrounding the central area .
  • a heat insulating member 1104 is disposed between the second sub-base 1102a and the first sub-base 1101a.
  • the heat insulating member 1104 is used to prevent the heat of the second sub-base 1102a from spreading to the first sub-base 1101a, and can form a stable temperature difference between the second sub-base 1102a and the first sub-base 1101a, for example, the first
  • the temperature difference between the second sub-base 1102a and the first sub-base 1101a is stable at 20°C-100°C.
  • the material of the thermal insulation 1104 includes quartz.
  • the receiving groove runs through the central area of the first sub-base 1101a; the second sub-base 1102a is located in the receiving groove; The second sub-slot area, the lateral dimension of the second sub-slot area is larger than the lateral dimension of the first sub-slot area, and the heat insulating member 1104 is arranged on the bottom of the second sub-slot area, so The heat insulating element 1104 is located around the first sub-tank area.
  • the containing tank further includes: a third sub-tank area located below the second sub-tank area; the semiconductor growth equipment further includes: a fixing pin 150 located in the third sub-tank area, the The fixing pin 150 is fixed to the first sub-base 1101a at the side of the third sub-tank area; the rotating shaft 160 is located below the fixing pin 150 and connected to the fixing pin 150 .
  • the rotational speed of the rotating shaft 160 is 10-120 rpm.
  • the fixing pin 150 is an insulating fixing pin.
  • the material of the insulating fixing pin includes quartz.
  • the distance between the first spray unit and the first heating zone is 8mm-20mm; the distance between the second spray unit and the second heating zone is 8mm-20mm. 20mm. If the distance between the first spray unit and the first heating zone is too large, the gas flow field in the reaction chamber will become unstable; if the distance between the first spray unit and the first heating zone If it is too small, the two spray units cannot effectively dissipate heat and the pre-reaction between the gas source materials will be strengthened.
  • the gas flow field in the reaction chamber will become unstable; if the distance between the second spray unit and the second heating zone If it is too small, the two spray units cannot effectively dissipate heat and the pre-reaction between the gas source materials will be strengthened.
  • the semiconductor growth equipment also includes: a first radio frequency unit 131a located below the first heating zone; a second radio frequency unit 132a located below the second heating zone; a radio frequency power of the first radio frequency unit 131a greater than the radio frequency power of the second radio frequency unit 132a.
  • the radio frequency power of the first radio frequency unit 131a and the radio frequency power of the second radio frequency unit 132a can be controlled independently.
  • the first radio frequency unit 131a uses the induced current to heat the second sub-mount 1102a without significantly affecting the temperature of the first sub-mount 1101a
  • the second radio frequency unit 132a uses the induced current to heat the second heating area. Due to the poor electrical and thermal conductivity of the insulating fixing pins, the insulating fixing pins will not be heated and can isolate the heat conduction between the second sub-base 1102a and the first sub-base 1101a.
  • the first heating wire can also be used to replace the first radio frequency unit 131a, and the second heating wire can be used to replace the second radio frequency unit 132a.
  • the semiconductor growth equipment may further include: the first transitional heating zone to the Nth transitional heating zone located between the first heating zone and the second heating zone; The first transitional spraying unit to the Nth transitional spraying unit between the second spraying units; N is an integer greater than or equal to 1, such as 1, 2, 3, 4 or an integer greater than 4.
  • the kth transitional shower unit is located above the kth transitional heating zone, and k is an integer greater than or equal to 1 and less than or equal to N.
  • the heating temperatures of the first transitional heating zone to the Nth transitional heating zone are respectively higher than the heating temperature of the second heating zone and lower than the heating temperature of the first heating zone.
  • the j+1th heating zone is located around the side of the jth transitional heating zone; j is an integer greater than or equal to 1 and less than or equal to N ⁇ 1.
  • the heating temperatures from the first transitional heating zone to the Nth transitional heating zone decrease gradually.
  • the embodiment of the present application also provides a working method of semiconductor growth equipment, referring to FIG. 4 , including:
  • the working method of the semiconductor growth equipment further includes: while passing the first gas source into the first pipeline, it is suitable to pass a third gas source into the third pipeline, and the third gas
  • the group source type of the source is the same as the group source type of the second gas source, and the flow rate of the third gas source passed into the third pipeline is smaller than that of the first gas source passed into the first pipeline Flow rate; while the second gas source is passed into the second pipeline, the fourth gas source is suitable to be passed into the fourth pipeline, and the group source type of the fourth gas source is the same as that of the first gas source
  • the source types of the first gas source are the same, and the flow rate of the fourth gas source in the fourth pipeline is smaller than the flow rate of the second gas source in the second pipeline.
  • the heating base is rotated around the central axis of the heating base.
  • the rotation speed of the heating base is 10 to 120 rotations/minute.

Abstract

本申请提供一种半导体生长设备及其工作方法，半导体生长设备包括：反应腔室；位于反应腔室中的加热基座，加热基座包括第一加热区和位于第一加热区侧部周围的第二加热区，第一加热区的加热温度大于第二加热区的加热温度，第二加热区的表面上适于放置衬底；位于反应腔室顶部的第一喷淋单元和第二喷淋单元，第一喷淋单元位于第一加热区的上方，第二喷淋单元位于第二加热区的上方；第一喷淋单元至少包括第一管路，第一管路中适于通入第一气源，第二喷淋单元至少包括第二管路，第二管路中适于通入第二气源，第一气源的分解温度大于第二气源的分解温度。所述半导体生长设备的最佳生长温度区间降低，扩大了使用范围。

Description

一种半导体生长设备及其工作方法
本申请要求在2021年10月27日提交中国专利局、申请号为202111251445.3、发明名称为“一种半导体生长设备及其工作方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及半导体技术领域，具体涉及一种半导体生长设备及其工作方法。
背景技术
半导体器件如半导体激光器、高电子迁移率晶体管、光电探测器等常采用外延生长技术进行制作，其中最常见的两种外延技术是金属有机物化学气相沉积(简称MOCVD)和分子束外延(简称MBE)。同MBE相比，MOCVD由于生长稳定性好、易于维护、产量高等优点，更加适用于大规模的商业化生产，近年来其市场份额逐年攀升。尽管MOCVD相较于MBE有上述优势，但MOCVD采用的半导体生长设备的最佳生长温度区间要显著高于MBE采用的半导体生长设备，因此很多需要在低温下生长的材料无法使用MOCVD进行生长，在很大程度上限制了MOCVD能够生长的材料范围。
综上，急需降低MOCVD采用的半导体生长设备的最佳生长温度区间的温度，扩大设备的使用范围。
发明内容
因此，本申请要解决的技术问题在于克服现有技术中半导体生长设备的最佳生长温度区间较高、使用范围较窄的问题，从而提供一种半导体生长设备及其工作方法。
本申请提供一种半导体生长设备，包括：反应腔室；位于所述反应腔室中的加热基座，所述加热基座包括第一加热区和位于所述第一加热区侧部周围的第二加热区，所述第一加热区的加热温度大于所述第二加热区的加热温度，所述第二加热区的表面上适于放置衬底；位于所述反应腔室的顶部的第一喷淋单元和第二喷淋单元，所述第二喷淋单元位于所述第一喷淋单元的侧部周围，且所述第一喷淋单元位于所述第一加热区的上方，所述第二喷淋单元位于所述第二加热区的上方；所述第一喷淋单元至少包括第一管路，第一管路中适于通入第一气源，所述第二喷淋单元至少包括第二管路，所述第二管路中适于通入第二气源，所述第一气源的分解温度大于所述第二气源的分解温度。
可选地，还包括：设置在第一管路的传输路径上的第一流量调节件；设置在所述第二管路的传输路径上的第二流量调节件。
可选地，还包括：设置在所述反应腔室的顶部且位于所述第一喷淋单元和所述第二喷淋单元之间的隔离件。
可选地，所述加热基座包括：第一子基座，所述第一子基座包括中心区域和围绕所述中心区域的边缘区域，所述中心区域的至少顶部中设置有容纳槽；位于所述容纳槽中的第二子基座；所述第二子基座构成所述第一加热区，位于所述第二子基座侧部的第一子基座构成所述第二加热区。
可选地，所述第二子基座和所述第一子基座之间设置有隔热件。
可选地，所述容纳槽位于所述中心区域的顶部中；所述半导体生长设备还包括：转动轴，所述转动轴与所述第二子基座下方的第一子基座固定。
可选地，所述容纳槽贯穿所述中心区域，所述容纳槽包括第一子槽区和位于所述第一子槽区上方的第二子槽区，所述第二子槽区的横向尺寸大于所述第一子槽区的横向尺寸，所述第二子槽区的槽底上设置有所述隔热件，所述隔热件位于所述第一子槽区的周围。
可选地，所述容纳槽还包括：位于所述第二子槽区下方的第三子槽区；所述半导体生长设备还包括：位于所述第三子槽区中的固定销，所述固定销与所述第三子槽区侧部的第一子基座固定；转动轴，所述转动轴位于所述固定销的下方且与所述固定销连接。
可选地，所述固定销为绝缘固定销。
可选地，所述第一喷淋单元至所述第一加热区之间的间距为8mm-20mm；所述第二喷淋单元至所述第二加热区之间的间距为8mm-20mm。
可选地，所述加热基座的材料包括石墨或钼。
可选地，所述第一喷淋单元还包括与所述第一管路间隔设置的第三管路，所述第三管路中适于通入第三气源，所述第三气源的族源类型与所述第二气源的族源类型相同，所述第三管路中适于通入第三气源的流量小于所述第一管路中适于通入第一气源的流量；所述第二喷淋单元还包括与所述第二管路间隔设置的第四管路，所述第四管路中适于通入第四气源，所述第四气源的族源类型与所述第一气源的族源类型相同，所述第四管路中适于通入第四气源的流量小于所述第二管路中适于通入第二气源的流量。
可选地，所述第一气源包括V族气源，所述第四气源包括V族气源；所述第二气源包括III族气源，所述第三气源包括III族气源。
可选地，所述第一气源的分解温度大于或等于所述第四气源的分解温度。
可选地，还包括：设置在第三管路的传输路径上的第三流量调节件；设置在所述第四管路的传输路径上的第四流量调节件。
可选地，还包括：位于第一加热区和第二加热区之间的第一过渡加热区至第N过渡加热区；位于第一喷淋单元和第二喷淋单元之间的第一过渡喷淋单元至第N过渡喷淋单元；N为大于等于1的整数；第k过渡喷淋单元位于第k过渡加热区的上方，k为大于或等于1且小于或等于N的整数。
可选地，还包括：位于所述第一加热区下方的第一射频单元；位于所述第二加热区下方的第二射频单元；所述第一射频单元的射频功率大于所述第二射频单元的射频功率。
本申请还提供一种半导体生长设备的工作方法，包括：将衬底放置在所述第二加热区的表面上；将衬底放置在所述第二加热区的表面上之后，在第一管路中通入第一气源，在第二管路中通入第二气源，第二气源在所述第二加热区的上方分解为第二分解气体，所述第一气源在所述第一加热区的上方分解为第一分解气体；所述第一分解气体传输至所述第二加热区的上方；所述第二加热区上方的第二分解气体和第一分解气体反应以在所述衬底表面生长膜层。
可选地，所述第一喷淋单元还包括与所述第一管路间隔设置的第三管路；所述第二喷淋单元还包括与所述第二管路间隔设置的第四管路；所述半导体生长设备的工作方法还包括：在所述第一管路中通入第一气源的同时，在所述第三管路中适于通入第三气源，所述第三气源的族源类型与所述第二气源的族源类型相同，所述第三管路中通入的第三气源的流量小于所述第一管路中通入的第一气源的流量；在所述第二管路中通入第二气源的同时，在所述第四管路中适于通入第四气源，所述第四气源的族源类型与所述第一气源的族源类型相同，所述第四管路中通入第四气源的流量小于所述第二管路中通入第二气源的流量。
可选地，将衬底放置在所述第二加热区的表面上之后，所述加热基座围绕所述加热基座的中心轴进行旋转。
本申请技术方案具有以下有益效果：
本申请技术方案提供的半导体生长设备中，所述加热基座包括第一加热区和位于所述第一 加热区侧部周围的第二加热区，所述第一加热区的加热温度大于所述第二加热区的加热温度；所述第二加热区的表面上适于放置衬底；位于所述反应腔室的顶部的第一喷淋单元和第二喷淋单元，所述第二喷淋单元位于所述第一喷淋单元的侧部周围，且所述第一喷淋单元位于所述第一加热区的上方，所述第二喷淋单元位于所述第二加热区的上方；所述第一喷淋单元至少包括第一管路，第一管路中适于通入第一气源，所述第二喷淋单元至少包括第二管路，所述第二管路中适于通入第二气源，所述第一气源的分解温度大于所述第二气源的分解温度。第二气源在所述第二加热区的上方分解为第二分解气体。由于所述第一加热区的加热温度大于所述第二加热区的加热温度，因此第一加热区能促进第一气源在第一加热区的表面分解，第一气源主要在第一加热区的表面分解为第一分解气体。第一分解气体随着气流运动至衬底表面和第二分解气体反应，因此第一分解气体和第二分解气体能在温度较低的第二加热区上反应就能得到质量较好的膜层，因此半导体生长设备的最佳生长温度区间降低，扩大了使用范围。
其次，第一气源适于从第一加热区的上方进入反应腔室中，第二气源适于从第二加热区的上方进入反应腔室中，因此，在第一气源和第二气源达到衬底表面之前，第二气源和第一气源大部分不会提前混合，从而减少了预反应，提升了材料的利用率。
可选地，第一流量调节件用于调节第一管路中通入的第一气源的流量，进而使得第一气源进入反应腔室中的流量得到选择性的调节。所述第二流量调节件用于调节第二管路中通入的第二气源的流量，进而使得第二气源进入反应腔室中的流量得到选择性的调节。
可选地，所述第一喷淋单元还包括第三管路，所述第三管路中适于通入第三气源，所述第三气源的族源类型与所述第二气源的族源类型相同，所述第三管路中适于通入第三气源的流量小于所述第一管路中适于通入第一气源的流量。所述第二喷淋单元还包括第四管路，所述第四管路中适于通入第四气源，所述第四气源的族源类型与所述第一气源的族源类型相同，所述第四管路中适于通入第四气源的流量小于所述第二管路中适于通入第二气源的流量。所述第三管路的作用包括：通过调节第三管路的总气体流量控制反应腔室的气体流场。所述第四管路的作用包括：通过调节第四管路的总气体流量控制反应腔室的气体流场。
可选地，还包括：设置在第三管路的传输路径上的第三流量调节件；设置在所述第四管路的传输路径上的第四流量调节件。所述第三流量调节件用于调节第三管路中通入的第三气源的流量，进而使得第三气源进入反应腔室中的流量得到选择性的调节。所述第四流量调节件用于 调节第四管路中通入的第四气源的流量，进而使得第四气源进入反应腔室中的流量得到选择性的调节。
可选地，还包括：设置在所述反应腔室的顶部且位于所述第一喷淋单元和所述第二喷淋单元之间的隔离件。隔离件用于阻止第一喷淋单元和第二喷淋单元在喷淋头内部混合。
可选地，第二子基座和所述第一子基座之间设置有隔热件。隔热件用于阻止第二子基座的热量扩散到第一子基座上，能在第二子基座和第一子基座之间形成稳定的温度差。
附图说明
为了更清楚地说明本申请具体实施方式或现有技术中的技术方案，下面将对具体实施方式或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图是本申请的一些实施方式，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请一实施例提供的半导体生长设备的结构示意图；
图2为本申请另一实施例提供的半导体生长设备的结构示意图；
图3为本申请又一实施例提供的半导体生长设备中加热基座、隔热件、转动轴、固定销、第一射频单元、第二射频单元的示意图；
图4为本申请实施例提供的半导体生长设备的工作方法的流程图。
具体实施方式
MOCVD反应室主要有三种，分别为行星式气垫旋转水平反应室、高速旋转盘式反应室以及紧耦合喷淋反应室。
行星式气垫旋转水平反应室中，当采用III族反应气源和V族反应气源时，III族反应气源和V族反应气源分别从上盖的三层流喷口进入反应室，通过格栅被迫转向沿放置衬底的基座和天棚之间的360度环形空间内呈辐射状向外缘水平流动，经有孔的石英侧环流出，其中，基座为石墨基座，天棚为石英天棚或石墨天棚。这种流动方式消除了水平反应室的侧壁，侧壁效应也随之消除。天棚和基座靠得很近，抑制了对流漩涡获得层流。三层流喷口的上、下两层走V族反应气源，中间层走III族反应气源，上盖的中央具有水冷单元，有利于抑制预反应。基座上有多个放置衬底的石墨行星转盘，多个石墨行星转盘呈环形均匀分布。基座的旋转(公转)用磁流体密封轴直接驱动，而石墨行星转盘则由气垫旋转技术驱动。衬底随基座公转又随石墨 行星转盘自转，实现了衬底自转加公转的行星式旋转，从而在整个衬底表面上获得了均匀的生长速度，同时提高片与片之间的均匀性。
高速旋转盘式反应室中，反应气源由顶部特殊设计的气流法兰盘喷口注入，基座高速旋转(转速为700r/min-1500r/min)，尾气由下部流出。利用基座高速旋转产生的泵效应来抑制立式反应室中由于喷口和基座的距离大而容易引起的热对流漩涡。这种泵效应是由于流体的黏性力和旋转产生的离心力联合作用的结果。在流体黏性力的作用下，靠近基片表面的一层气体随同基座一起转动；在离心力的作用下，气体不断地沿径向甩到基座的边缘。与此同时，基片上方的气体沿轴向流入基片表面以补充失去的气体。在适宜的高转速下，基座旋转可以使反应室内的气体平稳流过基座而不产生任何涡流的活塞流，同时也改善了基座上方的温度分布均匀性和温度梯度，从而大大提高生长速度的均匀性。氢化物与金属有机物(MO)源可以分别由气流法兰盘喷口注入，而且MO源又可以分成可以独立调整计量的内、中、外三个注入区进入反应室，以改善生长层的均匀性。不同喷口的气体出口流速可以通过匹配，以避免产生涡流。
紧耦合喷淋反应室的特点是反应气源的喷淋头与基座之间的距离小到10mm-20mm。从流体力学角度，缩短喷淋头与基座的距离有益于抑制基座上方的涡流形成。但是距离减小，会使喷淋头表面受热辐射引起高温而产生沉积，因此必须加以冷却。喷淋头有许多内径0.6mm的不锈钢管(喷孔)规则地排列而成，喷孔密度达到15.5个/cm 2。喷孔间距要小到使分别从两组相间的喷孔注入的III族反应气源和V族反应气源在经过短距离到达基座前也能充分混合。喷淋头中含有喷孔的总面积要大到能覆盖整个基座。喷淋头将反应气体均匀分配到基座表面的基片上方，从而使到达基片上各点的反应气体浓度基本相同，形成厚度均匀的边界层，从而得到均匀的外延层。
上述三种类型的反应室凭借自身独特的设计，均可以得到均匀的外延层。基于反应室气流场的设计，III族反应气源和V族反应气源的一部分甚至全部需要先到达基座中心，然后沿基座直径方向朝向基座边缘流动。但是这三种反应室的设计一般是尽可能减小基座沿直径方向的温度差，即基座中心的温度同基座边缘的温度基本相同，因此材料的裂解基本发生在基座上方。这里值得一提的是，由于V族反应气源的热解通常更为困难，因此通入反应室的V族反应气源的摩尔流量通常比III族反应气源的摩尔流量高，两者的比例通常在十到万之间。
由于三种反应室的设计理念问题，最终导致了三种设备均只有较窄的生长温度区间，具体 地，基座的温度不能过高，否则高应变薄层材料会发生由于高温而发生弛豫，但是基座的生长温度也不能太低，否则反应气源特别是V族反应气源到达基座表面的衬底上方之前未能有效热分解，从而导致实际参与反应的V族反应气源的量不足，降低生长质量。生长温度区间窄，特别是无法在较低温度下进行材料的生长，这严重限制了MOCVD生长的材料种类。
为了克服常规反应室存在的上述困难，发明人通过刻苦的实践，发明了一种半导体生长设备，通过特殊设计，有效降低了半导体生长设备的最佳生长温度区间，可以生长很多低温下才能生长的材料，扩大了半导体生长设备的使用范围。半导体生长设备的改进核心是在反应室内部有意设置了双温区，使气源进入反应室后先高温分解，然后输运到衬底表面进行低温生长。
下面将结合附图对本申请的技术方案进行清楚、完整地描述，显然，所描述的实施例是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
在本申请的描述中，需要说明的是，术语“中心”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”、“第三”仅用于描述目的，而不能理解为指示或暗示相对重要性。
此外，下面所描述的本申请不同实施方式中所涉及的技术特征只要彼此之间未构成冲突就可以相互结合。
本申请一实施例提供一种半导体生长设备，请参考图1，包括：
反应腔室100；
位于所述反应腔室100中的加热基座110，所述加热基座110包括第一加热区和位于所述第一加热区侧部周围的第二加热区，所述第一加热区的加热温度大于所述第二加热区的加热温度，所述第二加热区的表面上适于放置衬底C；
位于所述反应腔室100的顶部的第一喷淋单元121和第二喷淋单元122，所述第二喷淋单元122位于所述第一喷淋单元121的侧部周围，且所述第一喷淋单元121位于所述第一加热区的上方，所述第二喷淋单元122位于所述第二加热区的上方；
所述第一喷淋单元121至少包括第一管路1211，第一管路1211中适于通入第一气源，所 述第二喷淋单元122至少包括第二管路1221，所述第二管路1221中适于通入第二气源，所述第一气源的分解温度大于所述第二气源的分解温度。
本实施例中，所述半导体生长设备用于进行金属有机物化学气相沉积。
本实施例中，第二气源在所述第二加热区的上方分解为第二分解气体。由于所述第一加热区的加热温度大于所述第二加热区的加热温度，因此第一加热区能促进第一气源在第一加热区的表面分解，第一气源主要在第一加热区的表面分解为第一分解气体。第一分解气体随着气流运动至衬底C表面和第二分解气体反应，因此第一分解气体和第二分解气体能在温度较低的第二加热区上反应就能得到质量较好的膜层，因此半导体生长设备的最佳生长温度区间降低，扩大了使用范围。其次，第一气源适于从第一加热区的上方进入反应腔室中，第二气源适于从第二加热区的上方进入反应腔室中，因此，在第一气源和第二气源达到衬底表面之前，第二气源和第一气源大部分不会提前混合，从而减少了预反应，提升了材料的利用率。
本实施例中，第一喷淋单元121仅位于所述第一加热区的上方，所述第二喷淋单元122仅位于所述第二加热区的上方。
需要说明的是：在其他实施例中，第一喷淋单元121位于所述第一加热区的上方，所述第二喷淋单元122位于所述第二加热区的上方，可以是：第一喷淋单元主要位于第一加热区的正上方，且部分第一喷淋单元还位于部分第二加热区的上方，第二喷淋单元主要位于第二加热区的正上方，且部分第二喷淋单元还位于部分第一加热区的上方。
所述半导体生长设备还包括：设置在第一管路1211的传输路径上的第一流量调节件(未图示)；设置在所述第二管路1221的传输路径上的第二流量调节件(未图示)。
所述第一流量调节件用于调节第一管路1211中通入的第一气源的流量，进而使得第一气源进入反应腔室100中的流量得到选择性的调节。所述第二流量调节件用于调节第二管路1221中通入的第二气源的流量，进而使得第二气源进入反应腔室100中的流量得到选择性的调节。
本实施例中，第二加热区环绕第一加热区的侧部，所述第二喷淋单元122沿着所述第一喷淋单元121的周向均匀分布。
所述第一喷淋单元121还包括与所述第一管路1211间隔设置的第三管路1212，所述第三管路1212中适于通入第三气源，所述第三气源的族源类型与所述第二气源的族源类型相同，所述第三管路1212中适于通入第三气源的流量小于所述第一管路1211中适于通入第一气源的 流量。
所述第二喷淋单元122还包括与所述第二管路1221间隔设置的第四管路1222，所述第四管路1222中适于通入第四气源，所述第四气源的族源类型与所述第一气源的族源类型相同，所述第四管路1222中适于通入第四气源的流量小于所述第二管路1221中适于通入第二气源的流量。
所述第三管路1212的作用包括：调节反应腔室的气体流场分布以及气源在反应室内部空间的浓度分布。所述第四管路1222的作用包括：调节反应室的气体流场分布以及气源在反应室内部空间的浓度分布。
在一个实施例中，第一管路1211和第三管路1212之间的距离为5mm-30mm。
在一个实施例中，第二管路1221和第四管路1222之间的距离为5mm-30mm。
本实施例中，第一喷淋单元121仅包括第一管路1211和第三管路1212，第二喷淋单元122仅包括第二管路1221和第四管路1222。
需要说明的是，在其他实施例中，第一喷淋单元仅包括第一管路，第二喷淋单元仅包括第二管路。在其他实施例中，第一喷淋单元还可以包括更多的管路，第二喷淋单元还可以包括更多的管路。
本实施例中，所述第一气源包括V族气源，所述第四气源包括V族气源。本实施例中，所述第二气源包括III族气源，所述第三气源包括III族气源。
在其他实施例中，第一气源和第四气源还可以为其他族气源，第二气源和第三气源还可以为其他族气源。
所述第一气源的分解温度大于或等于所述第四气源的分解温度。在一个实施例中，第一气源的分解温度等于第四气源的分解温度，第一气源能选择和第四气源的材料相同，例如，第一气源的材料为砷烷(AsH 3)，第四气源的材料为砷烷(AsH 3)。在另一个实施例中，第一气源的分解温度大于第四气源的分解温度，第一气源的材料和第四气源的材料不同，例如，第一气源的材料为砷烷(AsH 3)，第四气源的材料为叔丁基砷(TBAs)。
第一气源的分解温度大于第四气源的分解温度，进一步提升V族气源的利用效率，同时降低材料的背景载流子浓度。
所述半导体生长设备还包括：设置在第三管路1212的传输路径上的第三流量调节件(未 图示)；设置在所述第四管路1222的传输路径上的第四流量调节件(未图示)。
所述第三流量调节件用于调节第三管路1212中通入的第三气源的流量，进而使得第三气源进入反应腔室100中的流量得到选择性的调节。所述第四流量调节件用于调节第四管路1222中通入的第四气源的流量，进而使得第四气源进入反应腔室100中的流量得到选择性的调节。
在另一个实施例中，参考图2，所述半导体生长设备还包括：设置在所述反应腔室100的顶部且位于所述第一喷淋单元121和第二喷淋单元122之间的隔离件140。
隔离件140的作用包括：阻止第一喷淋单元121和第二喷淋单元122在喷淋头内部混合。隔离件140的材料包括不锈钢。
在一个实施例中，隔离件140的形状为环状。
所述加热基座110的材料包括石墨或钼。
参考图1和图2，加热基座110包括：第一子基座1101，所述第一子基座1101包括中心区域和围绕所述中心区域的边缘区域，所述第一子基座1101的中心区域的至少顶部中设置有容纳槽1103，具体地，容纳槽1103位于第一子基座1101的中心区域的顶部中；位于所述容纳槽1103中的第二子基座1102；所述第二子基座1102构成所述第一加热区，位于所述第二子基座1102侧部的第一子基座1101构成所述第二加热区。
在一个实施例中，第一子基座1101的材料为石墨，第二子基座1102的材料为石墨。在其他实施例中，第一子基座1101的材料为钼，第二子基座1102的材料为钼。
半导体生长设备还包括：转动轴，所述转动轴与所述加热基座110的底部固定，所述转动轴用于驱动所述加热基座110围绕所述加热基座110的中心轴进行旋转。具体地，转动轴与第二子基座1102下方的第一子基座1101固定。在一个实施例中，转动轴的转速为10转/分钟～120转/分钟。
参考图1和图2，半导体生长设备还包括：位于所述第一加热区下方的第一射频单元131；位于所述第二加热区下方的第二射频单元132；所述第一射频单元131的射频功率大于所述第二射频单元132的射频功率。所述第一射频单元131利用感应电流加热第一加热区，第二射频单元132利用感应电流加热第二加热区。第一射频单元131的射频功率和第二射频单元132的射频功率能单独进行控制。
在又一个实施例中，参考图3，加热基座包括：第一子基座1101a和第二子基座1102a， 所述第一子基座1101a包括中心区域和围绕所述中心区域的边缘区域。第二子基座1102a和第一子基座1101a之间设置有隔热件1104。隔热件1104用于阻止第二子基座1102a的热量扩散到第一子基座1101a上，能在第二子基座1102a和第一子基座1101a之间形成稳定的温度差，例如第二子基座1102a和第一子基座1101a之间的温度差稳定在20摄氏度-100摄氏度。所述隔热件1104的材料包括石英。
参考图3，容纳槽贯穿第一子基座1101a的中心区域；第二子基座1102a位于所述容纳槽中；所述容纳槽包括第一子槽区和位于所述第一子槽区上方的第二子槽区，所述第二子槽区的横向尺寸大于所述第一子槽区的横向尺寸，所述第二子槽区的槽底上设置有所述隔热件1104，所述隔热件1104位于所述第一子槽区的周围。参考图3，所述容纳槽还包括：位于所述第二子槽区下方的第三子槽区；所述半导体生长设备还包括：位于所述第三子槽区中的固定销150，所述固定销150与所述第三子槽区侧部的第一子基座1101a固定；转动轴160，所述转动轴160位于所述固定销150的下方且与所述固定销150连接。在一个实施例中，转动轴160的转速为10转/分钟～120转/分钟。
所述固定销150为绝缘固定销。所述绝缘固定销的材料包括石英。
在一个实施例中，所述第一喷淋单元至所述第一加热区之间的间距为8mm-20mm；所述第二喷淋单元至所述第二加热区之间的间距为8mm-20mm。若第一喷淋单元至所述第一加热区之间的间距过大，则反应腔室内气体流场会变得不稳定；若第一喷淋单元至所述第一加热区之间的间距过小，则两个喷淋单元不能得到有效的散热且气源材料之间的预反应会加强。若第二喷淋单元至所述第二加热区之间的间距过大，则反应腔室内气体流场会变得不稳定；若第二喷淋单元至所述第二加热区之间的间距过小，则两个喷淋单元不能得到有效的散热且气源材料之间的预反应会加强。
参考图3，半导体生长设备还包括：位于所述第一加热区下方的第一射频单元131a；位于所述第二加热区下方的第二射频单元132a；所述第一射频单元131a的射频功率大于所述第二射频单元132a的射频功率。第一射频单元131a的射频功率和第二射频单元132a的射频功率能单独进行控制。所述第一射频单元131a利用感应电流加热第二子基座1102a且不会对第一子基座1101a的温度产生显著的影响，第二射频单元132a利用感应电流加热第二加热区。由于绝缘固定销的导电和导热性能差，因此绝缘固定销不会被加热且能够隔绝第二子基座1102a 和第一子基座1101a之间的热传导。
需要说明的是，当容纳槽贯穿第一子基座1101a的中心区域时，还可以使用第一加热丝替换第一射频单元131a，采用第二加热丝替换第二射频单元132a。
本实施例中，第一加热区和第二加热区之间没有其他的加热区，第一喷淋单元和第二喷淋单元之间没有设置其他的喷淋单元。
需要说明的是，在其他实施例中，半导体生长设备还可以包括：位于第一加热区和第二加热区之间的第一过渡加热区至第N过渡加热区；位于第一喷淋单元和第二喷淋单元之间的第一过渡喷淋单元至第N过渡喷淋单元；N为大于等于1的整数，例如为1、2、3、4或者大于4的整数。
第k过渡喷淋单元位于第k过渡加热区的上方，k为大于或等于1且小于或等于N的整数。
第一过渡加热区至第N过渡加热区的加热温度均分别大于第二加热区的加热温度且小于第一加热区的加热温度。
在一个实施例中，当N大于等于2时，第j+1加热区位于第j过渡加热区的侧部周围；j为大于或等于1且小于或等于N-1的整数。
在一个实施例中，当N大于等于2时，第一过渡加热区至第N过渡加热区的加热温度递减。
相应地，本申请实施例还提供一种半导体生长设备的工作方法，参考图4，包括：
S1：将衬底放置在所述第二加热区的表面上；
S2：将衬底放置在所述第二加热区的表面上之后，在第一管路中通入第一气源，在第二管路中通入第二气源，第二气源在所述第二加热区的上方分解为第二分解气体，所述第一气源在所述第一加热区的上方分解为第一分解气体；
S3：所述第一分解气体传输至所述第二加热区的上方；
S4：所述第二加热区上方的第二分解气体和第一分解气体反应以在所述衬底表面生长膜层。
所述半导体生长设备的工作方法还包括：在所述第一管路中通入第一气源的同时，在所述第三管路中适于通入第三气源，所述第三气源的族源类型与所述第二气源的族源类型相同，所述第三管路中通入的第三气源的流量小于所述第一管路中通入的第一气源的流量；在所述第二管路中通入第二气源的同时，在所述第四管路中适于通入第四气源，所述第四气源的族源类 型与所述第一气源的族源类型相同，所述第四管路中通入第四气源的流量小于所述第二管路中通入第二气源的流量。
本实施例中，还包括：将衬底放置在所述第二加热区的表面上之后，加热基座围绕所述加热基座的中心轴进行旋转。在一个实施例中，加热基座的转速为10转/分钟～120转/分钟。
显然，上述实施例仅仅是为清楚地说明所作的举例，而并非对实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引伸出的显而易见的变化或变动仍处于本申请的保护范围之中。

Claims (20)

  1. 一种半导体生长设备，其特征在于，包括：
    反应腔室；
    位于所述反应腔室中的加热基座，所述加热基座包括第一加热区和位于所述第一加热区侧部周围的第二加热区，所述第一加热区的加热温度大于所述第二加热区的加热温度，所述第二加热区的表面上适于放置衬底；
    位于所述反应腔室的顶部的第一喷淋单元和第二喷淋单元，所述第二喷淋单元位于所述第一喷淋单元的侧部周围，且所述第一喷淋单元位于所述第一加热区的上方，所述第二喷淋单元位于所述第二加热区的上方；
    所述第一喷淋单元至少包括第一管路，第一管路中适于通入第一气源，所述第二喷淋单元至少包括第二管路，所述第二管路中适于通入第二气源，所述第一气源的分解温度大于所述第二气源的分解温度。
  2. 根据权利要求1所述的半导体生长设备，其特征在于，还包括：设置在第一管路的传输路径上的第一流量调节件；设置在所述第二管路的传输路径上的第二流量调节件。
  3. 根据权利要求1所述的半导体生长设备，其特征在于，还包括：设置在所述反应腔室的顶部且位于所述第一喷淋单元和所述第二喷淋单元之间的隔离件。
  4. 根据权利要求1所述的半导体生长设备，其特征在于，所述加热基座包括：
    第一子基座，所述第一子基座包括中心区域和围绕所述中心区域的边缘区域，所述中心区域的至少顶部中设置有容纳槽；
    位于所述容纳槽中的第二子基座；
    所述第二子基座构成所述第一加热区，位于所述第二子基座侧部的第一子基座构成所述第二加热区。
  5. 根据权利要求4所述的半导体生长设备，其特征在于，所述第二子基座和所述第一子基座之间设置有隔热件。
  6. 根据权利要求4或5所述的半导体生长设备，其特征在于，所述容纳槽位于所述中心区域的顶部中；所述半导体生长设备还包括：转动轴，所述转动轴与所述第二子基座下方的第一子基座固定。
  7. 根据权利要求5所述的半导体生长设备，其特征在于，所述容纳槽贯穿所述中心区域，所述容纳槽包括第一子槽区和位于所述第一子槽区上方的第二子槽区，所述第二子槽区的横向尺寸大于所述第一子槽区的横向尺寸，所述第二子槽区的槽底上设置有所述隔热件，所述隔热件位于所述第一子槽区的周围。
  8. 根据权利要求7所述的半导体生长设备，其特征在于，所述容纳槽还包括：位于所述第二子槽区下方的第三子槽区；所述半导体生长设备还包括：位于所述第三子槽区中的固定销，所述固定销与所述第三子槽区侧部的第一子基座固定；转动轴，所述转动轴位于所述固定销的下方且与所述固定销连接。
  9. 根据权利要求8所述的半导体生长设备，其特征在于，所述固定销为绝缘固定销。
  10. 根据权利要求1所述的半导体生长设备，其特征在于，所述第一喷淋单元至所述第一加热区之间的间距为8mm-20mm；所述第二喷淋单元至所述第二加热区之间的间距为8mm-20mm。
  11. 根据权利要求1所述的半导体生长设备，其特征在于，所述加热基座的材料包括石墨或钼。
  12. 根据权利要求1所述的半导体生长设备，其特征在于，所述第一喷淋单元还包括与所述第一管路间隔设置的第三管路，所述第三管路中适于通入第三气源，所述第三气源的族源类型与所述第二气源的族源类型相同，所述第三管路中适于通入第三气源的流量小于所述第一管路中适于通入第一气源的流量；所述第二喷淋单元还包括与所述第二管路间隔设置的第四管路，所述第四管路中适于通入第 四气源，所述第四气源的族源类型与所述第一气源的族源类型相同，所述第四管路中适于通入第四气源的流量小于所述第二管路中适于通入第二气源的流量。
  13. 根据权利要求12所述的半导体生长设备，其特征在于，所述第一气源包括V族气源，所述第四气源包括V族气源；
    所述第二气源包括III族气源，所述第三气源包括III族气源。
  14. 根据权利要求12所述的半导体生长设备，其特征在于，所述第一气源的分解温度大于或等于所述第四气源的分解温度。
  15. 根据权利要求12所述的半导体生长设备，其特征在于，还包括：设置在第三管路的传输路径上的第三流量调节件；设置在所述第四管路的传输路径上的第四流量调节件。
  16. 根据权利要求1所述的半导体生长设备，其特征在于，还包括：位于第一加热区和第二加热区之间的第一过渡加热区至第N过渡加热区；位于第一喷淋单元和第二喷淋单元之间的第一过渡喷淋单元至第N过渡喷淋单元；N为大于等于1的整数；第k过渡喷淋单元位于第k过渡加热区的上方，k为大于或等于1且小于或等于N的整数。
  17. 根据权利要求1所述的半导体生长设备，其特征在于，还包括：位于所述第一加热区下方的第一射频单元；位于所述第二加热区下方的第二射频单元；所述第一射频单元的射频功率大于所述第二射频单元的射频功率。
  18. 一种如权利要求1至17任意一项所述的半导体生长设备的工作方法，其特征在于，包括：
    将衬底放置在所述第二加热区的表面上；
    将衬底放置在所述第二加热区的表面上之后，在第一管路中通入第一气源，在第二管路中通入第二气源，第二气源在所述第二加热区的上方分解为第二分解气体，所述第一气源在所述第一加热区的上方分解为第一分解气体；
    所述第一分解气体传输至所述第二加热区的上方；
    所述第二加热区上方的第二分解气体和第一分解气体反应以在所述衬底表面生长膜层。
  19. 根据权利要求18所述的半导体生长设备的工作方法，其特征在于，所述第一喷淋单元还包括与所述第一管路间隔设置的第三管路；所述第二喷淋单元还包括与所述第二管路间隔设置的第四管路；
    所述半导体生长设备的工作方法还包括：
    在所述第一管路中通入第一气源的同时，在所述第三管路中适于通入第三气源，所述第三气源的族源类型与所述第二气源的族源类型相同，所述第三管路中通入的第三气源的流量小于所述第一管路中通入的第一气源的流量；
    在所述第二管路中通入第二气源的同时，在所述第四管路中适于通入第四气源，所述第四气源的族源类型与所述第一气源的族源类型相同，所述第四管路中通入第四气源的流量小于所述第二管路中通入第二气源的流量。
  20. 根据权利要求18所述的半导体生长设备的工作方法，其特征在于，将衬底放置在所述第二加热区的表面上之后，所述加热基座围绕所述加热基座的中心轴进行旋转。
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