WO2023071233A1 - Thin-film solar cell and manufacturing method therefor - Google Patents

Thin-film solar cell and manufacturing method therefor Download PDF

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WO2023071233A1
WO2023071233A1 PCT/CN2022/099760 CN2022099760W WO2023071233A1 WO 2023071233 A1 WO2023071233 A1 WO 2023071233A1 CN 2022099760 W CN2022099760 W CN 2022099760W WO 2023071233 A1 WO2023071233 A1 WO 2023071233A1
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layer
transparent conductive
sub
region
electrode
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PCT/CN2022/099760
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French (fr)
Chinese (zh)
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许世森
董超
赵东明
申建汛
赵志国
秦校军
李梦洁
张赟
张�杰
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中国华能集团清洁能源技术研究院有限公司
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Publication of WO2023071233A1 publication Critical patent/WO2023071233A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/044—PV modules or arrays of single PV cells including bypass diodes
    • H01L31/0443—PV modules or arrays of single PV cells including bypass diodes comprising bypass diodes integrated or directly associated with the devices, e.g. bypass diodes integrated or formed in or on the same substrate as the photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present application relates to the technical field of solar cells, in particular to a thin-film solar cell and a manufacturing method of the thin-film solar cell.
  • solar cells mainly include silicon solar cells and thin-film solar cells.
  • thin-film solar cells have obvious potential in terms of production cost, conversion efficiency and product stability, making thin-film solar cells possible in the future. It will replace the commonly used silicon solar cells and become the mainstream of the market.
  • an embodiment of the present application provides a thin-film solar cell, which can effectively reduce the loss of power generation due to defects in sub-cells or shading, thereby helping to ensure the performance of the thin-film solar cell. power generation.
  • a thin film solar cell comprising:
  • the transparent conductive layer includes a first region and a second region arranged in sequence along the second direction, wherein the Both the first direction and the second direction are parallel to the first surface of the substrate, and the first direction is perpendicular to the second direction;
  • the sub-battery stacked structure on the surface of the first region and the first electrode layer covering the sub-battery stacked structure, the first electrode layer on the surface of the first region of the ith transparent conductive layer and the i+1th transparent conductive layer The first area is connected, 1 ⁇ i ⁇ N-1;
  • N bypass diodes arranged in sequence along the first direction, wherein the anode of the i-th bypass diode is connected to the second region of the i-th transparent conductive layer, and the cathode is connected to the i+1-th transparent conductive layer The second region of the layer is connected, the anode of the Nth bypass diode is connected to the second region of the Nth transparent conductive layer, and the negative electrode is connected to the first electrode layer on the surface of the first region of the Nth transparent conductive layer.
  • the bypass diode includes an N-type material layer, a P-type material layer, and a second electrode layer from bottom to top, wherein, the N-type material layer of the ith bypass diode covers the ith Partial surface of the second region of the transparent conductive layer, the P-type material layer covers the N-type material layer, the second electrode layer covers the P-type material layer, and extends along the first direction, covering the i+1th Partial surface of the second region of the transparent conductive layer; the N-type material layer of the Nth bypass diode covers the partial surface of the second region of the Nth transparent conductive layer, and the P-type material layer covers the N-type material layer.
  • a second electrode layer covers the P-type material layer, and the second electrode layer of the Nth bypass diode is connected to the first electrode layer on the surface of the first region of the Nth transparent conductive layer.
  • the N-type material layer is a phosphorus-doped ZnO material layer, a phosphorus-doped Ta2O5 material layer or a phosphorus-doped amorphous silicon thin film layer ;
  • the material of the P-type material layer is boron-doped Cu 2 O material layer, boron-doped NiO material layer or boron-doped amorphous silicon film layer;
  • the second electrode layer is copper layer, aluminum layer or gold layer.
  • the sub-battery stack structure includes a charge transport layer and a light absorbing layer
  • the charge transport layer includes a first charge transport layer and a second charge transport layer, wherein the light absorbing layer covers the first charge transport layer , the second charge transport layer covers the light absorbing layer, and the first electrode layer covers the second charge transport layer.
  • a method for manufacturing a thin-film solar cell comprising:
  • N transparent conductive layers arranged in sequence along the first direction are formed on the first surface of the substrate, N ⁇ 2, and the transparent conductive layer includes a first region and a second region arranged in sequence along the second direction, wherein, Both the first direction and the second direction are parallel to the first surface of the substrate, and the first direction is perpendicular to the second direction;
  • a sub-battery stack structure and a first electrode layer covering the sub-battery stack structure are formed on the surface of the first regions of the N transparent conductive layers, wherein the first electrode layer on the surface of the first region of the i-th transparent conductive layer is connected to the first electrode layer on the surface of the first region of the transparent conductive layer.
  • i+1 first regions of transparent conductive layers are connected, 1 ⁇ i ⁇ N-1;
  • N bypass diodes sequentially arranged along the first direction, wherein the anode of the i-th bypass diode is connected to the second region of the i-th transparent conductive layer, and the cathode is connected to the i+1-th transparent conductive layer
  • the second area of the conductive layer is connected
  • the anode of the Nth bypass diode is connected with the second area of the Nth transparent conductive layer
  • the negative electrode is connected with the first electrode layer on the surface of the first area of the Nth transparent conductive layer.
  • N transparent conductive layers sequentially arranged along the first direction on the first surface of the substrate includes:
  • Laser scribing is performed on the transparent conductive material layer to form the N transparent conductive layers sequentially arranged along the first direction.
  • forming N bypass diodes sequentially arranged along the first direction includes:
  • An N-type material layer is formed on the surfaces of the N second regions of the transparent conductive layers, and the N-type material layer covers part of the surfaces of the N second regions of the transparent conductive layers;
  • N second electrode layers are formed, and the i-th second electrode layer of the N second electrode layers covers the P-type material layer on the surface of the second region of the i-th transparent conductive layer, and along the Extending in one direction, covering part of the surface of the second region of the i+1th transparent conductive layer, the Nth second electrode layer of the N second electrode layers covering the surface of the second region of the N transparent conductive layers
  • the P-type material layer is connected to the first electrode layer on the surface of the first region of the Nth transparent conductive layer.
  • the sub-battery stack structure includes a charge transport layer and a light-absorbing layer, and the charge transport layer includes a first charge transport layer and a second charge transport layer;
  • the battery stack structure and the first electrode layer covering the sub-cell stack structure include:
  • the light absorbing layer covering the first charge transport layer is formed on the surface of the first charge transport layer, and the second charge transport layer is formed on the surface of the light absorbing layer, so that the Nth transparent conductive layer
  • the sub-battery stack structure is formed on the surface of a region;
  • the first electrode layer is formed on the surface of the second charge transport layer to form the sub-cell stack structure covering the sub-cell stack structure.
  • the technical solution provided by the embodiment of the present application includes: a substrate; N transparent conductive layers arranged sequentially along the first direction on the first side surface of the substrate, N ⁇ 2, and the transparent conductive layer includes sequentially arranged along the second direction
  • the first area and the second area are arranged; the sub-battery stack structure located on the surface of the first area and the first electrode layer covering the sub-battery stack structure, the first electrode layer is a metal electrode layer, to form N sub-batteries arranged in sequence along the first direction, wherein the first electrode layer on the surface of the first region of the i-th transparent conductive layer among the N transparent conductive layers is connected to the first region of the i+1-th transparent conductive layer , 1 ⁇ i ⁇ N-1.
  • the negative pole of the thin-film solar battery sub-battery is a transparent conductive layer, and the positive pole is a metal electrode layer
  • the negative pole of the sub-battery in the thin-film solar battery described in the embodiment of the application is the first region of the transparent conductive layer
  • the positive pole is the first electrode layer. It is known that the first electrode layer on the surface of the first region of the i-th transparent conductive layer among the N transparent conductive layers is connected to the first region of the i+1-th transparent conductive layer, so that the i-th sub-cell of the N sub-cells The positive pole is connected to the negative pole of the i+1th sub-battery.
  • the thin-film solar cell further includes N bypass diodes sequentially arranged along the first direction, wherein the anode of the i-th bypass diode is connected to the second region of the i-th transparent conductive layer, and its cathode is connected to the second region of the i-th transparent conductive layer.
  • the i+1 second regions of the transparent conductive layer are connected, so that the anode of the i-th bypass diode is connected to the cathode of the i-th sub-battery, and the cathode is connected to the cathode of the i+1-th sub-battery.
  • the positive pole of the i-th sub-battery among the N sub-batteries is connected to the negative pole of the i+1-th sub-battery, so that the negative pole of the i-th bypass diode can be connected to the i-th sub-battery through the negative pole of the i+1-th sub-battery.
  • the positive poles of the batteries are connected, so that the positive pole of the i-th bypass diode is connected with the negative pole of the ith sub-battery, and the negative pole is connected with the positive pole of the ith sub-battery.
  • the anode of the Nth bypass diode among the N bypass diodes is connected to the second area of the Nth transparent conductive layer among the N transparent conductive layers, and the negative electrode is connected to the surface of the first area of the Nth transparent conductive layer.
  • the first electrode layer is connected, so that the anode of the Nth bypass diode is connected to the cathode of the Nth sub-battery, and the cathode is connected to the anode of the Nth sub-battery.
  • each sub-cell in the thin-film solar cell provided by the embodiment of the present application has its own corresponding bypass diode, and the positive pole of each bypass diode is connected to the negative pole of the corresponding sub-cell, and the negative pole is connected to the corresponding sub-cell.
  • the anodes of the batteries are connected so that each sub-cell in the thin-film solar battery is connected in reverse parallel with a bypass diode.
  • each sub-cell in the thin-film solar cell is connected in series, and the series current depends on the minimum current in each sub-cell.
  • the series current of each sub-cell in the thin-film solar cell is reduced, so that the overall current of the thin-film solar cell is reduced.
  • Each sub-cell in the thin-film solar cell provided by the embodiment of the present application has its own corresponding bypass diode, and the bypass diode is connected in antiparallel with the corresponding sub-cell, so that if the sub-cell is not damaged due to serious defects or shading When the current becomes small, the bypass diode does not play a bypass role.
  • the bypass diode corresponding to the sub-cell whose current becomes smaller Both ends are forward-biased, so that the depletion layer of the bypass diode is narrowed, and the bypass diode is turned on to play a bypass role, so that the series current transmission of each sub-cell in the thin-film solar cell
  • the sub-cell with defect or shading occurs, it will not flow through the sub-cell with defect or shading, but will flow through the bypass diode corresponding to the sub-cell with defect or shading, so as to avoid the
  • the series current of each sub-cell flows through the sub-cell that has a defect or is blocked, so that the series current of each sub-cell in the thin-film solar cell becomes smaller, which helps to improve the performance of the thin-film solar cell due to a sub-cell or a plurality of sub-cells.
  • the occurrence of defects or shading causes the overall current reduction of the thin-film solar cell, thereby effectively reducing the
  • FIG. 1 is a schematic structural view of a thin-film solar cell provided in an embodiment of the present application
  • FIG. 2 is a schematic structural view of another thin-film solar cell provided in the embodiment of the present application.
  • FIG. 3 is a schematic structural view of another thin-film solar cell provided in the embodiment of the present application.
  • FIG. 4 is a schematic structural view of a sub-cell of a thin-film solar cell provided in an embodiment of the present application
  • FIG. 5 is a flow chart of a method for manufacturing a thin-film solar cell provided in an embodiment of the present application.
  • solar cells mainly include silicon solar cells and thin-film solar cells, wherein the thin-film solar cells include multiple battery components, and each battery component includes multiple sub-cells, and the multiple sub-cells are connected in series, so The plurality of battery components are connected in series, and the current of the battery components in the thin film solar cell is determined by the minimum current of the sub-cells in the battery component, and the current of the thin film solar cell is determined by the minimum current of each battery component.
  • the existing thin-film solar cells have junction boxes with built-in diodes in the positive and negative electrodes of each battery component.
  • the diode located in the junction box will be turned on, so that the current transmitted to the battery pack will flow through the diode instead of the battery pack, bypassing the battery pack. entire battery pack.
  • the existing thin-film solar cells when the current of one or more sub-cells in a battery component decreases, that is, when the battery component is abnormal, the entire battery component will be bypassed, including the sub-cells that can work normally in the battery component. Therefore, when the battery components of the existing thin-film solar cells are abnormal and the abnormal problem is solved, the power generation of the thin-film solar cells will be greatly affected, and the power generation of the thin-film solar cells will be greatly lost.
  • the thin-film solar cell includes:
  • N transparent conductive layers 20 arranged in sequence along the first direction on the first surface of the substrate, N ⁇ 2; as shown in FIG. 2 , the transparent conductive layer 20 includes first regions arranged in sequence along the second direction 21 and a second region 22, wherein both the first direction and the second direction are parallel to the first surface of the substrate, and the first direction is perpendicular to the second direction;
  • the sub-battery stacked structure located on the surface of the first region 21 (the sub-battery stacked structure is formed between the first electrode layer and the first area of the transparent conductive layer, not shown in FIG. 1 ) and the sub-battery stacked structure covering
  • the first electrode layer 31 of the first electrode layer is a metal electrode layer to form N sub-batteries arranged in sequence along the first direction, wherein the i-th transparent conductive layer 20 in the N transparent conductive layers 20
  • the first electrode layer 31 on the surface of the first region 21 is connected to the first region 21 of the i+1th transparent conductive layer 20 among the N transparent conductive layers 20, 1 ⁇ i ⁇ N-1; it should be noted that,
  • Each of the N sub-batteries includes a first electrode layer, a sub-battery stack structure, and a part of the substrate corresponding to the sub-battery stack structure;
  • N bypass diodes 40 arranged in sequence along the first direction, wherein the anode of the i-th bypass diode 40 among the N bypass diodes 40 is connected to the second region 21 of the i-th transparent conductive layer 20
  • the negative electrode is connected to the second region 22 of the i+1th transparent conductive layer 20, and the positive electrode of the Nth bypass diode 40 among the N bypass diodes 40 is connected to the Nth electrode of the Nth transparent conductive layer 20.
  • the second regions 22 of the transparent conductive layers 20 are connected, and the negative electrode is connected to the first electrode layer on the surface of the first region 21 of the Nth transparent conductive layer 20 .
  • the connecting lines in the two black elliptical coils in Figure 1 are schematic lines, not the real structure in the thin film solar cell, wherein the first coil along the first direction
  • the connecting line inside is used to represent the connection between the first electrode layer 31 on the surface of the first region 21 of the ith transparent conductive layer 20 and the first region 21 of the i+1th transparent conductive layer 20 among the N transparent conductive layers 20
  • the connection relationship and connection sequence of the second coil are used to indicate the connection relationship between the first electrode layer on the surface of the first region 21 of the Nth transparent conductive layer 20 and the Nth bypass diode.
  • connection of the plurality of sub-batteries and the connection of the first electrode layer on the surface of the first region of the Nth transparent conductive layer with the Nth bypass diode are all formed by laser scribing to form scribed grooves. Depositing an electrode layer in the line groove to realize the connection is a commonly used prior art, which will not be repeated here.
  • the anode of the thin-film solar cell sub-cell is a transparent conductive layer, and the anode is a metal electrode layer
  • the negative electrode of the sub-cell in the thin-film solar cell provided in the embodiment of the application is the first transparent conductive layer.
  • the anode is the first electrode layer, and it is known that the first electrode layer on the surface of the first region of the ith transparent conductive layer among the N transparent conductive layers is connected to the first region of the i+1th transparent conductive layer, so that the The positive pole of the i-th sub-battery in the N sub-batteries is connected to the negative pole of the i+1-th sub-battery, that is, the series connection between the i-th sub-battery and the i+1-th sub-battery in the N sub-batteries, and the N sub-batteries
  • the positive pole of the i-th sub-battery is connected to the negative pole of the (i+1)-th sub-battery, so that the series current direction of the N sub-batteries is parallel to the first direction.
  • the thin-film solar cell includes N bypass diodes, wherein the anode of the i-th bypass diode among the N bypass diodes is connected to the second region of the i-th transparent conductive layer, and the cathode is connected to the i+1-th transparent conductive layer.
  • the second region of the conductive layer is connected so that the anode of the i-th bypass diode is connected to the cathode of the i-th sub-battery, and the cathode is connected to the cathode of the i+1-th sub-battery, so that when current flows in the bypass diode
  • the current direction of the bypass diode is parallel to the first direction, that is, when a current flows through the bypass diode, the current direction of the bypass diode is the same as that of the thin film solar cell series current.
  • the positive pole of the i-th sub-battery among the N sub-batteries is connected to the negative pole of the i+1-th sub-battery, so that the negative pole of the i-th bypass diode can be connected to the negative pole of the i-th sub-battery through the negative pole of the i+1-th sub-battery
  • the anodes of the i sub-batteries are connected, so that the anode of the i-th bypass diode is connected to the cathode of the i-th sub-battery, and the cathode is connected to the anode of the i-th sub-battery, that is, the i-th bypass diode connected in antiparallel with the ith sub-battery.
  • the anode of the Nth bypass diode among the N bypass diodes is connected to the second area of the Nth transparent conductive layer among the N transparent conductive layers, and the negative electrode is connected to the surface of the first area of the Nth transparent conductive layer.
  • the first electrode layer is connected so that the anode of the Nth bypass diode is connected to the cathode of the Nth sub-cell, and the cathode is connected to the anode of the Nth sub-cell, that is, the Nth bypass diode connected in reverse parallel with the Nth sub-battery. It can be seen that each sub-cell in the thin-film solar cell provided by the embodiment of the present application is connected in reverse parallel with a bypass diode.
  • the sub-cells in a thin-film solar cell are connected in series, and the series current depends on the minimum current in each sub-cell.
  • the series current of each sub-cell in the thin-film solar cell is reduced, thereby reducing the overall current of the thin-film solar cell.
  • Each sub-cell of the thin-film solar cell provided in the embodiment of the present application is connected with a bypass diode in reverse parallel, so that each sub-cell can work normally, and the current becomes smaller due to defects or shading.
  • the circuit diode is in the cut-off state and does not play a bypass role; if one or more sub-batteries in each sub-battery are defective or blocked, the current of the one or more sub-batteries decreases, the voltage at both ends of the sub-battery will decrease, and the A forward bias voltage is generated at both ends of the bypass diode corresponding to the sub-battery with reduced current, so that the depletion layer of the bypass diode is narrowed, and the bypass diode is turned on to play a bypass role.
  • a plurality of sub-batteries are connected in series, the direction of the series current is parallel to the first direction, and the anode of the i-th bypass diode is connected to the cathode of the i-th sub-battery, and the cathode is connected to the anode of the i-th sub-battery, which can make
  • the positive pole of the i-th bypass diode is connected to the positive pole of the i-1th sub-battery, and the negative pole is connected to the negative pole of the i+1-th sub-battery.
  • the bias voltage makes the depletion layer of the bypass diode narrow, prompts the bypass diode to conduct, and acts as a bypass, so that the series current of each sub-cell in the thin-film solar cell is transmitted to generate defects or occur
  • the sub-battery is shaded, it does not flow through the sub-cell that produces defects or shades, but flows through the bypass diodes that are connected in reverse parallel with the sub-cells that generate defects or shade, so as to avoid the series current of each sub-cell in the thin film solar cell Flow through the sub-cells that generate defects or shading, thereby avoiding the series current of multiple cells in the thin-film solar cell from becoming smaller, and helping to improve the thin-film solar cells due to defects or shading of one sub-cell or multiple sub-cells , resulting in the reduction of the overall current of the thin-film solar cell, thereby effectively reducing the loss of power generation of the thin-film solar cell and ensuring the power generation of the thin-film solar cell.
  • bypass diode of the thin-film solar cell provided by the embodiment of the present application is located in the second region of the transparent conductive layer, that is, the bypass diode is embedded inside the module, and does not need to be formed in the junction box, which helps to reduce the size of the junction box, Make the appearance of the thin-film solar cell more aesthetically pleasing.
  • the bypass diode 40 includes an N-type material layer 41, a P-type material layer 42, and a second electrode from top to bottom.
  • the N-type material layer 41 of the ith bypass diode 40 covers part of the surface of the second region 22 of the ith transparent conductive layer 20, and the P of the ith bypass diode 40
  • the n-type material layer 42 covers the n-type material layer 41 of the ith bypass diode 40
  • the second electrode layer 43 of the i-th bypass diode 40 covers the p-type material layer 42, and along the extending in the first direction, covering part of the surface of the second region 22 of the i+1th transparent conductive layer 20, so that the anode of the ith bypass diode 40 is in contact with the second region 22 of the ith transparent conductive layer 20
  • the negative pole is connected to the second region 22 of the i+1th transparent conductive layer 20; the N-type material layer 41 of the Nth bypass diode 40 covers the second region 22 of the Nth transparent conductive layer 20 Part of the surface, the P-type material layer 42 of the Nth bypass diode 40 covers the N-type material layer 41 of the
  • the N-type material layer is a phosphorus-doped ZnO material layer, a phosphorus-doped Ta2O5 material layer, or a phosphorus-doped amorphous silicon film layer;
  • the P- type The material layer is a boron-doped Cu2O material layer, a boron-doped NiO material layer, or a boron-doped amorphous silicon film layer;
  • the second electrode layer is a copper layer, an aluminum layer, or a gold layer, but the embodiment of the present application does not This is not limited and depends on the situation.
  • the thickness of the N-type material layer is not greater than 500 nm, and the thickness of the P-type material layer is not greater than 500 nm, but this is not limited in the embodiment of the present application, and it depends on the situation.
  • FIG. transport layer 313 and a second charge transport layer 314, wherein the light absorbing layer 312 covers the first charge transport layer 313, the second charge transport layer 314 covers the light absorbing layer 312, and the first electrode layer 31 Covering the second charge transport layer 314 to form N sub-cells sequentially arranged along the first direction, wherein the sub-cell stack structure 30 is formed on the first surface of the substrate 10, the light-absorbing layer is used to absorb photons, The first charge transport layer is used to transport holes, and the second charge transport layer is used to transport electrons.
  • the embodiment of the present application also provides a method for manufacturing a thin-film solar cell, as shown in FIG. 5 , the method includes:
  • S2 Form N transparent conductive layers sequentially arranged along the first direction on the first side surface of the substrate, N ⁇ 2, and the transparent conductive layer includes a first region and a second region sequentially arranged along the second direction , wherein both the first direction and the second direction are parallel to the first side surface of the substrate, and the first direction is perpendicular to the second direction.
  • forming N transparent conductive layers sequentially arranged along the first direction on the first surface of the substrate includes: forming a transparent conductive material layer on the first surface of the substrate, and the transparent conductive material layer covers the second transparent conductive layer of the substrate.
  • S3 Form a sub-battery stacked structure and a first electrode layer covering the sub-battery stacked structure on the surface of the first region of the N transparent conductive layers, wherein the i-th transparent conductive layer among the N transparent conductive layers The first electrode layer on the surface of a region is connected to the first region of the (i+1)th transparent conductive layer, 1 ⁇ i ⁇ N-1.
  • the sub-battery stack structure sequentially includes a charge transport layer and a light absorbing layer, and the charge transport layer includes a first charge transport layer and a second charge transport layer; in the N
  • the sub-battery stack structure formed on the surface of the first region of the transparent conductive layer and the first electrode layer covering the sub-cell stack structure include: between the N second transparent conductive layer regions and two adjacent second transparent conductive layer regions The gaps between form a mask layer; as shown in Figure 4, after forming the mask layer, a first charge transport layer 313 is formed in the first regions 21 of the N transparent conductive layers 20, forming the first charge transport layer After 313, the light absorbing layer 312 covering the first charge transport layer 313 is formed on the surface of the first charge transport layer 313, and the second charge transport layer 314 is formed on the surface of the light absorbing layer 312, so that The surface of the first region 21 of the N transparent conductive layers 20 forms the sub-cell laminated structure 30;
  • the first electrode layer is formed on the surface of the charge transport
  • the first electrode layer 31 covering the sub-battery stack structure 30 forms N sub-batteries sequentially arranged along the first direction.
  • forming the first electrode layer includes: scribing the sub-battery stack structure through a laser scribing process, forming a scribe groove that penetrates the sub-cell stack structure and extends to the surface of the adjacent transparent conductive layer, and deposits the first electrode layer on the The surface of the sub-battery laminated structure is deposited into the line groove, so that the positive electrode of the i-th sub-battery is connected to the negative electrode of the i+1-th sub-battery.
  • S4 forming N bypass diodes sequentially arranged along the first direction, wherein the anode of the i-th bypass diode among the N bypass diodes is connected to the second region of the i-th transparent conductive layer,
  • the negative electrode is connected to the second region of the i+1th transparent conductive layer, and the anode of the Nth bypass diode among the N bypass diodes is connected to the second region of the Nth transparent conductive layer among the N transparent conductive layers.
  • the negative electrode is connected to the first electrode layer on the surface of the first region of the Nth transparent conductive layer.
  • forming the N bypass diodes sequentially arranged along the first direction includes: forming a mask layer in a region other than the second region of the transparent conductive layer, forming the mask layer Afterwards, as shown in FIG. 3 , an N-type material layer 41 is formed on the surface of the second regions 22 of the N transparent conductive layers 20, and the N-type material layer 41 covers the second regions 22 of the N transparent conductive layers 20. surface, and can extend along the first direction to the gap between the second region 22 of the adjacent transparent conductive layer 20, covering the gap part area.
  • the gap between two adjacent transparent conductive layers 20 is exposed The substrate, so that the N-type material layer 41 covers the gap part area, that is, the N-type material layer 41 covers the exposed part of the substrate 10 between the second areas 22 of two adjacent transparent conductive layers 20; forming the After the N-type material layer 41, a P-type material layer 42 covering the N-type material layer 41 is formed; after the P-type material layer 42 is formed, N second electrode layers 43 are formed, wherein the N second electrode layers 43, the i-th second electrode layer 43 covers the P-type material layer 42 on the surface of the second region 22 of the i-th transparent conductive layer 20, and extends along the first direction to cover the i+1th Part of the surface of the second region 22 of the transparent conductive layer 20, so that the anode of the i-th bypass diode 40 is connected to the second region 22 of the i-th transparent conductive layer 20, and the negative electrode is connected to the i+1-th transparent conductive layer 20 the second region 22 is connected, and the N
  • the manufacturing method further includes forming a transparent conductive layer 44 extending below the first electrode layer 31 of the Nth sub-cell on the side away from the Nth transparent conductive layer 20 along the first direction, and the transparent conductive layer 44 is connected to the first electrode layer of the Nth sub-cell, and the second electrode layer 43 of the Nth bypass diode 40 covers the transparent conductive layer extending below the first electrode layer 31 of the Nth sub-cell 44, so that the second electrode layer 43 of the Nth bypass diode 40 can be connected to the first electrode layer 31 of the Nth sub-battery, but the application does not limit this, depending on the situation .
  • the i-th second electrode layer among the N second electrode layers covers the P-type material layer on the surface of the second region of the i-th transparent conductive layer, and along the first direction extending to cover part of the surface of the second region of the i+1th transparent conductive layer, so that the i-th second electrode layer among the N second electrode layers is connected to the negative electrode of the i+1-th sub-battery.
  • the positive pole of the i-th sub-battery in the N sub-batteries is connected to the negative pole of the i+1-th sub-battery, so that the i-th second electrode layer among the N second electrode layers can be connected to the i-th sub-battery
  • the anode of the i-th bypass diode is connected to the anode of the i-th sub-battery among the N bypass diodes, and because the second region of the N transparent conductive layers is sequentially formed with an N-type material layer and a P-type material layers, so that the anode of the i-th bypass diode among the N bypass diodes is connected to the cathode of the i-th sub-battery.
  • the Nth bypass diode of the N bypass diodes covers part of the surface of the second area of the Nth transparent conductive layer among the N transparent conductive layers, and is connected to the surface of the first area of the Nth transparent conductive layer.
  • the first electrode layers are connected so that the cathode of the Nth bypass diode among the N bypass diodes is connected to the anode of the Nth sub-battery, and the anode is connected to the cathode of the Nth sub-battery.
  • each sub-cell in the thin-film solar cell has a diode connected in reverse parallel to it.
  • the sub-cells in a thin-film solar cell are connected in series, and the series current depends on the minimum current in each sub-cell, so that when one or more of the sub-cells in a thin-film solar cell is defective or occurs When the shading causes the sub-cell current to decrease, the series current of each sub-cell in the thin-film solar cell will decrease, thereby reducing the overall current of the thin-film solar cell.
  • Each sub-cell of the thin-film solar cell manufactured by the manufacturing method provided in the embodiment of the present application has a bypass diode connected in reverse parallel to it, so that if each sub-cell works normally, the current does not decrease due to defects or shading.
  • bypass diodes corresponding to each sub-battery are in the cut-off state and do not play a bypass role; if one or more sub-batteries in each sub-battery are defective or blocked, when the current of the one or more sub-batteries is reduced, the sub-battery will The voltage at both ends becomes smaller, and a forward bias voltage is generated at both ends of the bypass diode corresponding to the sub-cell whose current becomes smaller, so that the depletion layer of the bypass diode is narrowed, and the bypass diode is turned on, Acting as a bypass, so that the depletion layer of the bypass diode is narrowed, prompting the bypass diode to be turned on, and acting as a bypass, so that the series current of each sub-cell in the thin film solar cell is transmitted to the defective Or when the sub-cells that are shaded, do not flow through the sub-cells that generate defects or shade, and flow through the bypass diodes that are anti-parallel with the sub-cells that
  • the series current flows through the sub-cells that are defective or blocked, thereby avoiding the reduction of the series current of multiple cells in the thin-film solar cell, which helps to improve the thin-film solar cell due to a sub-cell or a plurality of sub-cells. Shading causes the overall current reduction of the thin-film solar cell, thereby effectively reducing the loss of power generation of the thin-film solar cell and ensuring the power generation of the thin-film solar cell.
  • bypass diode of the thin-film solar cell manufactured by the manufacturing method provided in the embodiment of the present application is located in the second region of the transparent conductive layer, and the bypass diode is embedded in the module without being formed in the junction box, which helps to reduce the The small size of the junction box makes the appearance of the thin film solar cell more aesthetically pleasing.
  • the N-type material layer is a phosphorus-doped ZnO material layer, a phosphorus-doped Ta2O5 material layer, or a phosphorus-doped amorphous silicon film layer;
  • the P- type The material layer is a boron-doped Cu2O material layer, a boron-doped NiO material layer, or a boron-doped amorphous silicon film layer;
  • the second electrode layer is a copper layer, an aluminum layer, or a gold layer, but the embodiment of the present application does not This is not limited and depends on the situation.
  • the thickness of the N-type material layer is not greater than 500 nm, and the thickness of the P-type material layer is not greater than 500 nm, but this is not limited in the embodiment of the present application, and it depends on the situation.
  • the process for forming the N-type material layer is a magnetron sputtering process or a vacuum evaporation process
  • the process for forming the P-type material layer is a magnetron sputtering process or
  • the process for forming the second electrode layer is a vacuum evaporation process, but this embodiment of the present application does not limit it, and it depends on the situation.
  • bypass diodes usually requires vacuum evaporation equipment and magnetron sputtering equipment
  • manufacture of thin film solar cells usually also requires vacuum evaporation equipment and magnetron sputtering equipment.
  • the thin-film solar cell includes: a substrate; N transparent conductive layers arranged in sequence along the first direction on the first side surface of the substrate , N ⁇ 2, the transparent conductive layer includes a first region and a second region arranged in sequence along the second direction; a sub-battery stack structure located on the surface of the first region and a first An electrode layer, forming N sub-batteries arranged in sequence along the first direction, wherein, among the N transparent conductive layers, the first electrode layer on the surface of the first region of the i-th transparent conductive layer and the i+1-th transparent conductive layer
  • the first area is connected, 1 ⁇ i ⁇ N-1; N bypass diodes arranged in sequence along the first direction, wherein, among the N bypass diodes, the anode of the i-th bypass diode is connected to the anode of the first
  • the second area of the i transparent conductive layer is connected, the negative electrode is connected to the second
  • the second region of the Nth transparent conductive layer is connected to the second region, and the negative electrode is connected to the first electrode layer on the surface of the first region of the Nth transparent conductive layer, so that each sub-cell in the thin-film solar cell provided by the embodiment of the present application is Having a bypass diode connected in antiparallel to it can prevent the series current of each sub-cell in the thin-film solar cell from flowing through the sub-cell that has a defect or is shaded, so that the series current of each sub-cell in the thin-film solar cell becomes smaller , which helps to improve the thin-film solar cell current reduction problem due to defects or shading of one or more sub-cells in the thin-film solar cell, thereby effectively reducing the loss of power generation of the thin-film solar cell and ensuring that the thin-film solar cell The amount of electricity generated by the solar cell.

Abstract

Disclosed in embodiments of the present application are a thin-film solar cell and a manufacturing method therefor. The thin-film solar cell comprises: N transparent conductive layers located on a first surface of a substrate, N≥2; a sub-cell laminated structure and a first electrode layer which are located on the surface of a first area of the transparent conductive layer to form N sub-cells, wherein the first electrode layer on the surface of a first area of the i-th transparent conductive layer is connected to a first area of the (i+1)-th transparent conductive layer; and N bypass diodes, wherein the positive electrode of the i-th bypass diode is connected to the negative electrode of the i-th sub-cell, and the negative electrode thereof is connected to the positive electrode of the i-th sub-cell; the positive electrode of the N-th bypass diode is connected to the negative electrode of the N-th sub-cell, and the negative electrode thereof is connected to the positive electrode of the N-th sub-cell, that is, the bypass diodes are reversely connected in parallel to the N sub-cells respectively, such that the problem that the overall current of the thin-film solar cell is reduced due to defects or shielding caused by one or a plurality of sub-cells is solved.

Description

一种薄膜太阳能电池及其制作方法A kind of thin-film solar cell and its manufacturing method
本申请要求于2021年10月27日提交中国专利局、申请号为202111255617.4、发明名称为“一种薄膜太阳能电池及其制作方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。This application claims the priority of the Chinese patent application with the application number 202111255617.4 and the title of the invention "a thin-film solar cell and its manufacturing method" submitted to the China Patent Office on October 27, 2021, the entire contents of which are incorporated herein by reference. Applying.
技术领域technical field
本申请涉及太阳能电池技术领域，尤其涉及一种薄膜太阳能电池以及该薄膜太阳能电池的制作方法。The present application relates to the technical field of solar cells, in particular to a thin-film solar cell and a manufacturing method of the thin-film solar cell.
背景技术Background technique
目前，太阳能电池主要包括硅太阳能电池和薄膜太阳能电池两大类，其中，薄膜太阳能电池由于在生产成本、转换效率和产品稳定性等方面均具有比较明显的潜力，使得薄膜太阳能电池在未来有可能会取代一般常用硅太阳能电池，成为市场主流。At present, solar cells mainly include silicon solar cells and thin-film solar cells. Among them, thin-film solar cells have obvious potential in terms of production cost, conversion efficiency and product stability, making thin-film solar cells possible in the future. It will replace the commonly used silicon solar cells and become the mainstream of the market.
然而，现有薄膜太阳能电池具体工作时，当薄膜太阳能电池中的一个或多个子电池产生缺陷或发生遮挡时，会使得薄膜太阳能电池电流减小，从而导致薄膜太阳能电池的发电量降低，使得薄膜太阳能电池发电量损失较大。因此，提供一种能够有效降低发电量损失的薄膜太阳能电池，成为了本领域技术人员的研究重点。However, when the existing thin-film solar cells work specifically, when one or more sub-cells in the thin-film solar cells are defective or shaded, the current of the thin-film solar cells will be reduced, thereby reducing the power generation of the thin-film solar cells, making the thin-film solar cells The power generation loss of solar cells is relatively large. Therefore, providing a thin-film solar cell that can effectively reduce the loss of power generation has become a research focus of those skilled in the art.
发明内容Contents of the invention
为解决上述技术问题，本申请实施例提供了一种薄膜太阳能电池，该薄膜太阳能电池能够有效降低由于子电池产生缺陷或发生遮挡导致的发电量损失，从而有助于保证所述薄膜太阳能电池的发电量。In order to solve the above technical problems, an embodiment of the present application provides a thin-film solar cell, which can effectively reduce the loss of power generation due to defects in sub-cells or shading, thereby helping to ensure the performance of the thin-film solar cell. power generation.
为解决上述问题，本申请实施例提供了如下技术方案：In order to solve the above problems, the embodiment of the present application provides the following technical solutions:
一种薄膜太阳能电池，包括：A thin film solar cell comprising:
基板：Substrate:
位于所述基板第一表面沿第一方向依次排布的N个透明导电层，N≥2，所述透明导电层包括沿第二方向依次排布的第一区域和第二区域，其中，所述第一方向和所述第二方向均平行于所述基板第一表面，且所述第一方向与所述第二方向垂直；N transparent conductive layers arranged in sequence along the first direction on the first surface of the substrate, N≥2, the transparent conductive layer includes a first region and a second region arranged in sequence along the second direction, wherein the Both the first direction and the second direction are parallel to the first surface of the substrate, and the first direction is perpendicular to the second direction;
位于所述第一区域表面的子电池层叠结构和覆盖所述子电池层叠结构的第一电极层，第i个透明导电层第一区域表面的第一电极层与第i+1个透明导电层第一区域相连，1≤i≤N-1；The sub-battery stacked structure on the surface of the first region and the first electrode layer covering the sub-battery stacked structure, the first electrode layer on the surface of the first region of the ith transparent conductive layer and the i+1th transparent conductive layer The first area is connected, 1≤i≤N-1;
沿所述第一方向依次排布的N个旁路二极管，其中，第i个旁路二极管正极与所述第i个透明导电层第二区域相连，负极与所述第i+1个透明导电层第二区域相连，第N个旁路二极管正极与第N个透明导电层第二区域相连，负极与所述第N个透明导电层第一区域表面的第一电极层相连。N bypass diodes arranged in sequence along the first direction, wherein the anode of the i-th bypass diode is connected to the second region of the i-th transparent conductive layer, and the cathode is connected to the i+1-th transparent conductive layer The second region of the layer is connected, the anode of the Nth bypass diode is connected to the second region of the Nth transparent conductive layer, and the negative electrode is connected to the first electrode layer on the surface of the first region of the Nth transparent conductive layer.
可选的，所述旁路二极管由下至上依次包括N型材料层、P型材料层、第二电极层，其中，所述第i个旁路二极管的N型材料层覆盖所述第i个透明导电层第二区域部分表面，P型材料层覆盖所述N型材料层，第二电极层覆盖所述P型材料层，且沿所述第一方向延伸，覆盖所述第i+1个透明导电层第二区域部分表面；所述第N个旁路二极管的N型材料层覆盖所述第N个透明导电层第二区域部分表面，P型材料层覆盖所述N型材料层，第二电极层覆盖所述P型材料层，且所述第N个旁路二极管的所述第二电极层与所述第N个透明导电层第一区域表面的所述第一电极层相连。Optionally, the bypass diode includes an N-type material layer, a P-type material layer, and a second electrode layer from bottom to top, wherein, the N-type material layer of the ith bypass diode covers the ith Partial surface of the second region of the transparent conductive layer, the P-type material layer covers the N-type material layer, the second electrode layer covers the P-type material layer, and extends along the first direction, covering the i+1th Partial surface of the second region of the transparent conductive layer; the N-type material layer of the Nth bypass diode covers the partial surface of the second region of the Nth transparent conductive layer, and the P-type material layer covers the N-type material layer. A second electrode layer covers the P-type material layer, and the second electrode layer of the Nth bypass diode is connected to the first electrode layer on the surface of the first region of the Nth transparent conductive layer.
可选的，所述N型材料层为磷掺杂ZnO材料层、磷掺杂Ta 2O 5材料层或磷掺杂非晶硅薄膜层；所述P型材料层的材料为硼掺杂Cu 2O材料层、硼掺杂NiO材料层或硼掺杂非晶硅薄膜层；所述第二电极层为铜层、铝层或金层。 Optionally, the N-type material layer is a phosphorus-doped ZnO material layer, a phosphorus-doped Ta2O5 material layer or a phosphorus-doped amorphous silicon thin film layer ; the material of the P-type material layer is boron-doped Cu 2 O material layer, boron-doped NiO material layer or boron-doped amorphous silicon film layer; the second electrode layer is copper layer, aluminum layer or gold layer.
可选的，所述子电池层叠结构包括电荷传输层和吸光层，所述电荷传输层 包括第一电荷传输层和第二电荷传输层，其中，所述吸光层覆盖所述第一电荷传输层，所述第二电荷传输层覆盖所述吸光层，所述第一电极层覆盖所述第二电荷传输层。Optionally, the sub-battery stack structure includes a charge transport layer and a light absorbing layer, and the charge transport layer includes a first charge transport layer and a second charge transport layer, wherein the light absorbing layer covers the first charge transport layer , the second charge transport layer covers the light absorbing layer, and the first electrode layer covers the second charge transport layer.
一种薄膜太阳能电池制作方法，包括：A method for manufacturing a thin-film solar cell, comprising:
提供一基板；providing a substrate;
在所述基板第一表面形成沿第一方向依次排布的N个透明导电层，N≥2，所述透明导电层包括沿第二方向依次排布的第一区域和第二区域，其中，所述第一方向和所述第二方向均平行于所述基板第一表面，且所述第一方向与所述第二方向垂直；N transparent conductive layers arranged in sequence along the first direction are formed on the first surface of the substrate, N≥2, and the transparent conductive layer includes a first region and a second region arranged in sequence along the second direction, wherein, Both the first direction and the second direction are parallel to the first surface of the substrate, and the first direction is perpendicular to the second direction;
在所述N个透明导电层第一区域表面形成子电池层叠结构和覆盖所述子电池层叠结构的第一电极层，其中，第i个透明导电层第一区域表面的第一电极层与第i+1个透明导电层第一区域相连，1≤i≤N-1；A sub-battery stack structure and a first electrode layer covering the sub-battery stack structure are formed on the surface of the first regions of the N transparent conductive layers, wherein the first electrode layer on the surface of the first region of the i-th transparent conductive layer is connected to the first electrode layer on the surface of the first region of the transparent conductive layer. i+1 first regions of transparent conductive layers are connected, 1≤i≤N-1;
形成沿所述第一方向依次排布的N个旁路二极管，其中，第i个旁路二极管正极与所述第i个透明导电层第二区域相连，负极与所述第i+1个透明导电层第二区域相连，第N个旁路二极管正极与第N个透明导电层第二区域相连，负极与所述第N个透明导电层第一区域表面的第一电极层相连。forming N bypass diodes sequentially arranged along the first direction, wherein the anode of the i-th bypass diode is connected to the second region of the i-th transparent conductive layer, and the cathode is connected to the i+1-th transparent conductive layer The second area of the conductive layer is connected, the anode of the Nth bypass diode is connected with the second area of the Nth transparent conductive layer, and the negative electrode is connected with the first electrode layer on the surface of the first area of the Nth transparent conductive layer.
可选的，在所述基板第一表面形成沿第一方向依次排布的N个透明导电层包括：Optionally, forming N transparent conductive layers sequentially arranged along the first direction on the first surface of the substrate includes:
在所述基板第一表面形成透明导电材料层；forming a transparent conductive material layer on the first surface of the substrate;
对所述透明导电材料层进行激光划线，形成沿所述第一方向依次排布的所述N个透明导电层。Laser scribing is performed on the transparent conductive material layer to form the N transparent conductive layers sequentially arranged along the first direction.
可选的，形成沿所述第一方向依次排布的N个旁路二极管包括：Optionally, forming N bypass diodes sequentially arranged along the first direction includes:
在所述N个透明导电层第二区域表面形成N型材料层，所述N型材料层覆盖所述N个透明导电层第二区域部分表面；An N-type material layer is formed on the surfaces of the N second regions of the transparent conductive layers, and the N-type material layer covers part of the surfaces of the N second regions of the transparent conductive layers;
形成所述N型材料层之后，形成覆盖所述N型材料层的P型材料层；After forming the N-type material layer, forming a P-type material layer covering the N-type material layer;
形成N个第二电极层，所述N个第二电极层中第i个第二电极层覆盖所 述第i个透明导电层第二区域表面的所述P型材料层，并沿所述第一方向延伸，覆盖所述第i+1个透明导电层第二区域部分表面，所述N个第二电极层中第N个第二电极层覆盖所述N个透明导电层第二区域表面的所述P型材料层，且与所述第N个透明导电层第一区域表面的第一电极层相连。N second electrode layers are formed, and the i-th second electrode layer of the N second electrode layers covers the P-type material layer on the surface of the second region of the i-th transparent conductive layer, and along the Extending in one direction, covering part of the surface of the second region of the i+1th transparent conductive layer, the Nth second electrode layer of the N second electrode layers covering the surface of the second region of the N transparent conductive layers The P-type material layer is connected to the first electrode layer on the surface of the first region of the Nth transparent conductive layer.
可选的，所述子电池层叠结构包括电荷传输层和吸光层，所述电荷传输层包括第一电荷传输层和第二电荷传输层；在所述N个透明导电层第一区域表面形成子电池层叠结构和覆盖所述子电池层叠结构的第一电极层包括：Optionally, the sub-battery stack structure includes a charge transport layer and a light-absorbing layer, and the charge transport layer includes a first charge transport layer and a second charge transport layer; The battery stack structure and the first electrode layer covering the sub-cell stack structure include:
在所述N个透明导电层第一区域表面形成所述第一电荷传输层；forming the first charge transport layer on the surface of the first regions of the N transparent conductive layers;
在所述第一电荷传输层表面形成覆盖所述第一电荷传输层的所述吸光层，并在所述吸光层表面形成所述第二电荷传输层，以在所述N个透明导电层第一区域表面形成所述子电池层叠结构；The light absorbing layer covering the first charge transport layer is formed on the surface of the first charge transport layer, and the second charge transport layer is formed on the surface of the light absorbing layer, so that the Nth transparent conductive layer The sub-battery stack structure is formed on the surface of a region;
在所述N个透明导电层第一区域表面形成所述子电池层叠结构之后，在所述第二电荷传输层表面形成所述第一电极层，以形成覆盖所述子电池层叠结构的所述第一电极层。After the sub-battery stack structure is formed on the surface of the first regions of the N transparent conductive layers, the first electrode layer is formed on the surface of the second charge transport layer to form the sub-cell stack structure covering the sub-cell stack structure. first electrode layer.
与现有技术相比，上述技术方案具有以下优点：Compared with the prior art, the above-mentioned technical solution has the following advantages:
本申请实施例所提供的技术方案包括：基板；位于所述基板第一侧表面沿第一方向依次排布的N个透明导电层，N≥2，所述透明导电层包括沿第二方向依次排布的第一区域和第二区域；位于所述第一区域表面的子电池层叠结构和覆盖所述子电池层叠结构的第一电极层，所述第一电极层为金属电极层，以形成沿第一方向依次排布的N个子电池，其中，所述N个透明导电层中第i个透明导电层第一区域表面的第一电极层与第i+1个透明导电层第一区域相连，1≤i≤N-1。由于薄膜太阳能电池子电池负极为透明导电层，正极为金属电极层，从而本申请实施例所述的薄膜太阳能电池中的子电池负极为透明导电层第一区域，正极为第一电极层，已知所述N个透明导电层中第i个透明导电层第一区域表面的第一电极层与第i+1个透明导电层第一区域相连，从而所述N个子电池中第i个子电池的正极与第i+1个子电池的负极相连。The technical solution provided by the embodiment of the present application includes: a substrate; N transparent conductive layers arranged sequentially along the first direction on the first side surface of the substrate, N≥2, and the transparent conductive layer includes sequentially arranged along the second direction The first area and the second area are arranged; the sub-battery stack structure located on the surface of the first area and the first electrode layer covering the sub-battery stack structure, the first electrode layer is a metal electrode layer, to form N sub-batteries arranged in sequence along the first direction, wherein the first electrode layer on the surface of the first region of the i-th transparent conductive layer among the N transparent conductive layers is connected to the first region of the i+1-th transparent conductive layer , 1≤i≤N-1. Since the negative pole of the thin-film solar battery sub-battery is a transparent conductive layer, and the positive pole is a metal electrode layer, the negative pole of the sub-battery in the thin-film solar battery described in the embodiment of the application is the first region of the transparent conductive layer, and the positive pole is the first electrode layer. It is known that the first electrode layer on the surface of the first region of the i-th transparent conductive layer among the N transparent conductive layers is connected to the first region of the i+1-th transparent conductive layer, so that the i-th sub-cell of the N sub-cells The positive pole is connected to the negative pole of the i+1th sub-battery.
所述薄膜太阳能电池还包括沿所述第一方向依次排布的N个旁路二极管， 其中，第i个旁路二极管正极与所述第i个透明导电层第二区域相连，负极与所述i+1个透明导电层第二区域相连，使得所述第i个旁路二极管正极与所述第i个子电池负极相连，负极与第i+1个子电池的负极相连。已知述N个子电池中第i个子电池的正极与第i+1个子电池的负极相连，从而所述第i个旁路二极管负极能够通过第i+1个子电池的负极与所述第i个子电池的正极相连，进而使得所述第i个旁路二极管正极与所述第i个子电池负极相连，负极与所述第i个子电池的正极相连。所述N个旁路二极管中第N个旁路二极管正极与所述N个透明导电层中第N个透明导电层第二区域相连，负极与所述第N个透明导电层第一区域表面的第一电极层相连，使得所述第N个旁路二极管的正极与所述第N个子电池的负极相连，负极与所述第N个子电池的正极相连。由此可见，本申请实施例所提供的薄膜太阳能电池中的各个子电池均具有各自对应的旁路二极管，且每个旁路二极管的正极与对应的子电池的负极相连，负极与对应的子电池的正极相连，使得所述薄膜太阳能电池中的各个子电池均反向并联一个旁路二极管。The thin-film solar cell further includes N bypass diodes sequentially arranged along the first direction, wherein the anode of the i-th bypass diode is connected to the second region of the i-th transparent conductive layer, and its cathode is connected to the second region of the i-th transparent conductive layer. The i+1 second regions of the transparent conductive layer are connected, so that the anode of the i-th bypass diode is connected to the cathode of the i-th sub-battery, and the cathode is connected to the cathode of the i+1-th sub-battery. It is known that the positive pole of the i-th sub-battery among the N sub-batteries is connected to the negative pole of the i+1-th sub-battery, so that the negative pole of the i-th bypass diode can be connected to the i-th sub-battery through the negative pole of the i+1-th sub-battery. The positive poles of the batteries are connected, so that the positive pole of the i-th bypass diode is connected with the negative pole of the ith sub-battery, and the negative pole is connected with the positive pole of the ith sub-battery. The anode of the Nth bypass diode among the N bypass diodes is connected to the second area of the Nth transparent conductive layer among the N transparent conductive layers, and the negative electrode is connected to the surface of the first area of the Nth transparent conductive layer. The first electrode layer is connected, so that the anode of the Nth bypass diode is connected to the cathode of the Nth sub-battery, and the cathode is connected to the anode of the Nth sub-battery. It can be seen that each sub-cell in the thin-film solar cell provided by the embodiment of the present application has its own corresponding bypass diode, and the positive pole of each bypass diode is connected to the negative pole of the corresponding sub-cell, and the negative pole is connected to the corresponding sub-cell. The anodes of the batteries are connected so that each sub-cell in the thin-film solar battery is connected in reverse parallel with a bypass diode.
需要说明的是，通常情况下，薄膜太阳能电池中各子电池串联，串联电流取决于各子电池中的最小电流，当一个或多个子电池产生缺陷或发生遮挡导致子电池电流减小时，会使得薄膜太阳能电池中各子电池的串联电流减小，从而使得薄膜太阳能电池整体电流减小。本申请实施例所提供的薄膜太阳能电池中的各个子电池均具有各自对应的旁路二极管，并且所述旁路二极管同对应的子电池反向并联，使得若子电池没有由于严重缺陷或发生遮挡导致电流变小时，旁路二极管不发挥旁路作用，若一个或多个子电池产生缺陷或发生遮挡时，使得一个或多个子电池电流减小时，会使得与电流变小的子电池对应的旁路二极管两端受到正向偏压，使得所述旁路二极管的耗尽层变窄，促使所述旁路二极管导通，起到旁路作用，使得所述薄膜太阳能电池中各子电池的串联电流传输到产生缺陷或发生遮挡的子电池时，不流经产生缺陷或发生遮挡的子电池，而会流经与产生缺陷或发生遮挡的子电池相对应的旁路二极管，避免所述薄膜太阳能电池中各子电池的串联电流流经产生缺陷或发生遮挡的子电池，使得所述 薄膜太阳能电池中各子电池的串联电流变小，有助于改善所述薄膜太阳能电池由于一个子电池或多个子电池产生缺陷或发生遮挡，导致的薄膜太阳能电池整体电流减小的问题，从而有效降低薄膜太阳能电池的发电量损失，保证所述薄膜太阳能电池的发电量。It should be noted that, usually, the sub-cells in a thin-film solar cell are connected in series, and the series current depends on the minimum current in each sub-cell. The series current of each sub-cell in the thin-film solar cell is reduced, so that the overall current of the thin-film solar cell is reduced. Each sub-cell in the thin-film solar cell provided by the embodiment of the present application has its own corresponding bypass diode, and the bypass diode is connected in antiparallel with the corresponding sub-cell, so that if the sub-cell is not damaged due to serious defects or shading When the current becomes small, the bypass diode does not play a bypass role. If one or more sub-cells are defective or blocked, and the current of one or more sub-cells decreases, the bypass diode corresponding to the sub-cell whose current becomes smaller Both ends are forward-biased, so that the depletion layer of the bypass diode is narrowed, and the bypass diode is turned on to play a bypass role, so that the series current transmission of each sub-cell in the thin-film solar cell When the sub-cell with defect or shading occurs, it will not flow through the sub-cell with defect or shading, but will flow through the bypass diode corresponding to the sub-cell with defect or shading, so as to avoid the The series current of each sub-cell flows through the sub-cell that has a defect or is blocked, so that the series current of each sub-cell in the thin-film solar cell becomes smaller, which helps to improve the performance of the thin-film solar cell due to a sub-cell or a plurality of sub-cells. The occurrence of defects or shading causes the overall current reduction of the thin-film solar cell, thereby effectively reducing the loss of power generation of the thin-film solar cell and ensuring the power generation of the thin-film solar cell.
附图说明Description of drawings
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据提供的附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only It is an embodiment of the present invention, and those skilled in the art can also obtain other drawings according to the provided drawings without creative work.
图1为本申请实施例提供的一种薄膜太阳能电池的结构示意图；FIG. 1 is a schematic structural view of a thin-film solar cell provided in an embodiment of the present application;
图2为本申请实施例提供的另一种薄膜太阳能电池的结构示意图；FIG. 2 is a schematic structural view of another thin-film solar cell provided in the embodiment of the present application;
图3为本申请实施例提供的再一种薄膜太阳能电池的结构示意图；FIG. 3 is a schematic structural view of another thin-film solar cell provided in the embodiment of the present application;
图4为本申请实施例提供的一种薄膜太阳能电池的子电池的结构示意图；FIG. 4 is a schematic structural view of a sub-cell of a thin-film solar cell provided in an embodiment of the present application;
图5为本申请实施例提供的一种薄膜太阳能电池制作方法的流程图。FIG. 5 is a flow chart of a method for manufacturing a thin-film solar cell provided in an embodiment of the present application.
具体实施方式Detailed ways
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.
在下面的描述中阐述了很多具体细节以便于充分理解本申请，但是本申请还可以采用其他不同于在此描述的其它方式来实施，本领域技术人员可以在不违背本申请内涵的情况下做类似推广，因此本申请不受下面公开的具体实施例的限制。In the following description, a lot of specific details are set forth in order to fully understand the application, but the application can also be implemented in other ways different from those described here, and those skilled in the art can do without violating the connotation of the application. By analogy, the present application is therefore not limited by the specific embodiments disclosed below.
其次，本申请结合示意图进行详细描述，在详述本申请实施例时，为便于 说明，表示器件结构的剖面图会不依一般比例作局部放大，而且所述示意图只是示例，其在此不应限制本申请保护的范围。此外，在实际制作中应包含长度、宽度及深度的三维空间尺寸。Secondly, the present application is described in detail in combination with schematic diagrams. When describing the embodiments of the present application in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the general scale, and the schematic diagram is only an example, which should not be limited here. The protection scope of this application. In addition, the three-dimensional space dimensions of length, width and depth should be included in actual production.
正如背景技术部分所述，提供一种能够有效降低发电量损失的薄膜太阳能电池，成为了本领域技术人员的研究重点。As mentioned in the background section, providing a thin-film solar cell that can effectively reduce the loss of power generation has become a research focus of those skilled in the art.
目前，太阳能电池主要包括硅太阳能电池和薄膜太阳能电池两大类，其中，所述薄膜太阳能电池包括多个电池组件，每个电池组件又包括多个子电池，所述多个子电池之间串联，所述多个电池组件串联，并且薄膜太阳能电池中的电池组件的电流由电池组件中的子电池的最小电流决定，薄膜太阳能电池的电流由各个电池组件的最小电流决定。因此而当电池组件中的子电池产生缺陷或发生遮挡时，导致子电池电流减小时，会导致电池组件电流减小，进而导致薄膜太阳能电池组件电流减小，导致薄膜太阳能电池的发电量降低，使得薄膜太阳能电池发电量损失较大。At present, solar cells mainly include silicon solar cells and thin-film solar cells, wherein the thin-film solar cells include multiple battery components, and each battery component includes multiple sub-cells, and the multiple sub-cells are connected in series, so The plurality of battery components are connected in series, and the current of the battery components in the thin film solar cell is determined by the minimum current of the sub-cells in the battery component, and the current of the thin film solar cell is determined by the minimum current of each battery component. Therefore, when the sub-cells in the battery module are defective or blocked, the current of the sub-cells decreases, which will lead to a decrease in the current of the battery component, which in turn will lead to a decrease in the current of the thin-film solar cell module, resulting in a decrease in the power generation of the thin-film solar cell. Make the thin film solar cell power generation loss larger.
现有薄膜太阳能电池为了抑制由于电池组件中的子电池电流减小，导致的薄膜太阳能电池的电流减小，在各电池组件正负极内置二极管的接线盒，当电池组件中的子电池由于产生缺陷或发生遮挡，导致电流减小，进而导致电池组件电流减小时，位于接线盒内的二极管将会导通，使得传输到此电池组件的电流流经二极管，不流经电池组件，旁路掉整个电池组件。然而，由于现有薄膜太阳能电池当某个电池组件中的一个或多个子电池电流减小，即电池组件发生异常时，会旁路掉整个电池组件，包括电池组件中能够正常工作的子电池，使得现有薄膜太阳能电池当电池组件发生异常，解决异常问题时，会对薄膜太阳能电池的发电量产生较大影响，使得薄膜太阳能电池的发电量损失较大。In order to suppress the current reduction of the thin-film solar cells due to the reduction of the current of the sub-cells in the battery components, the existing thin-film solar cells have junction boxes with built-in diodes in the positive and negative electrodes of each battery component. When defects or shading occurs, resulting in a decrease in current, which in turn leads to a decrease in the current of the battery pack, the diode located in the junction box will be turned on, so that the current transmitted to the battery pack will flow through the diode instead of the battery pack, bypassing the battery pack. entire battery pack. However, due to the existing thin-film solar cells, when the current of one or more sub-cells in a battery component decreases, that is, when the battery component is abnormal, the entire battery component will be bypassed, including the sub-cells that can work normally in the battery component. Therefore, when the battery components of the existing thin-film solar cells are abnormal and the abnormal problem is solved, the power generation of the thin-film solar cells will be greatly affected, and the power generation of the thin-film solar cells will be greatly lost.
基于此，本申请实施例提供了一种薄膜太阳能电池，如图1所示，该薄膜太阳能电池包括：Based on this, an embodiment of the present application provides a thin-film solar cell, as shown in FIG. 1 , the thin-film solar cell includes:
基板(在图1中没有示出)；Substrate (not shown in Figure 1);
位于所述基板第一表面沿第一方向依次排布的N个透明导电层20，N≥2；如图2所示，所述透明导电层20包括沿第二方向依次排布的第一区域21和第 二区域22，其中，所述第一方向和所述第二方向均平行于所述基板第一表面，且所述第一方向与所述第二方向垂直；N transparent conductive layers 20 arranged in sequence along the first direction on the first surface of the substrate, N≥2; as shown in FIG. 2 , the transparent conductive layer 20 includes first regions arranged in sequence along the second direction 21 and a second region 22, wherein both the first direction and the second direction are parallel to the first surface of the substrate, and the first direction is perpendicular to the second direction;
位于所述第一区域21表面的子电池层叠结构(子电池层叠结构形成于第一电极层与透明导电层第一区域之间，在图1中没有示出)和覆盖所述子电池层叠结构的第一电极层31，所述第一电极层为金属电极层，以形成沿第一方向依次排布的N个子电池，其中，所述N个透明导电层20中第i个透明导电层20第一区域21表面的第一电极层31与所述N个透明导电层20中第i+1个透明导电层20第一区域21相连，1≤i≤N-1；需要说明的是，所述N个子电池中各个子电池均包括第一电极层、子电池层叠结构以及所述基板与所述子电池层叠结构相对应的部分；The sub-battery stacked structure located on the surface of the first region 21 (the sub-battery stacked structure is formed between the first electrode layer and the first area of the transparent conductive layer, not shown in FIG. 1 ) and the sub-battery stacked structure covering The first electrode layer 31 of the first electrode layer is a metal electrode layer to form N sub-batteries arranged in sequence along the first direction, wherein the i-th transparent conductive layer 20 in the N transparent conductive layers 20 The first electrode layer 31 on the surface of the first region 21 is connected to the first region 21 of the i+1th transparent conductive layer 20 among the N transparent conductive layers 20, 1≤i≤N-1; it should be noted that, Each of the N sub-batteries includes a first electrode layer, a sub-battery stack structure, and a part of the substrate corresponding to the sub-battery stack structure;
沿所述第一方向依次排布的N个旁路二极管40，其中，所述N个旁路二极管40中第i个旁路二极管40正极与所述第i个透明导电层20第二区域21相连，负极与所述第i+1个透明导电层20第二区域22相连，所述N个旁路二极管40中第N个旁路二极管40正极与所述N个透明导电层20中第N个透明导电层20第二区域22相连，负极与所述第N个透明导电层20第一区域21表面的第一电极层相连。 N bypass diodes 40 arranged in sequence along the first direction, wherein the anode of the i-th bypass diode 40 among the N bypass diodes 40 is connected to the second region 21 of the i-th transparent conductive layer 20 The negative electrode is connected to the second region 22 of the i+1th transparent conductive layer 20, and the positive electrode of the Nth bypass diode 40 among the N bypass diodes 40 is connected to the Nth electrode of the Nth transparent conductive layer 20. The second regions 22 of the transparent conductive layers 20 are connected, and the negative electrode is connected to the first electrode layer on the surface of the first region 21 of the Nth transparent conductive layer 20 .
需要说明的是，如图1所示，图1中的两个黑色椭圆线圈中的连接线为示意线，并非所述薄膜太阳能电池中的真实的结构，其中沿第一方向的第一个线圈内的连接线用于表示第i个透明导电层20第一区域21表面的第一电极层31与所述N个透明导电层20中第i+1个透明导电层20第一区域21之间的连接关系和连接顺序，第二个线圈内的连接线用于表示所述第N个透明导电层20第一区域21表面的第一电极层与第N个旁路二极管之间的连接关系。需要说明的是，所述多个子电池相连以及所述第N个透明导电层第一区域表面的第一电极层与第N个旁路二极管相连均是通过激光划线形成刻线槽，将第一电极层沉积在刻线槽中实现连接的，为常用的现有技术，在此不再过多赘述。It should be noted that, as shown in Figure 1, the connecting lines in the two black elliptical coils in Figure 1 are schematic lines, not the real structure in the thin film solar cell, wherein the first coil along the first direction The connecting line inside is used to represent the connection between the first electrode layer 31 on the surface of the first region 21 of the ith transparent conductive layer 20 and the first region 21 of the i+1th transparent conductive layer 20 among the N transparent conductive layers 20 The connection relationship and connection sequence of the second coil are used to indicate the connection relationship between the first electrode layer on the surface of the first region 21 of the Nth transparent conductive layer 20 and the Nth bypass diode. It should be noted that the connection of the plurality of sub-batteries and the connection of the first electrode layer on the surface of the first region of the Nth transparent conductive layer with the Nth bypass diode are all formed by laser scribing to form scribed grooves. Depositing an electrode layer in the line groove to realize the connection is a commonly used prior art, which will not be repeated here.
具体的，在本申请实施例中，由于薄膜太阳能电池子电池负极为透明导电层，正极为金属电极层，从而本申请实施例所提供的薄膜太阳能电池中的子电 池负极为透明导电层第一区域，正极为第一电极层，已知所述N个透明导电层中第i个透明导电层第一区域表面的第一电极层与第i+1个透明导电层第一区域相连，从而所述N个子电池中第i个子电池的正极与第i+1个子电池的负极相连，即所述N个子电池中第i个子电池与第i+1个子电池的串联，同时所述N个子电池中第i个子电池的正极与第i+1个子电池的负极相连，使得所述N个子电池的串联电流方向平行于第一方向。Specifically, in the embodiment of the present application, since the anode of the thin-film solar cell sub-cell is a transparent conductive layer, and the anode is a metal electrode layer, the negative electrode of the sub-cell in the thin-film solar cell provided in the embodiment of the application is the first transparent conductive layer. region, the anode is the first electrode layer, and it is known that the first electrode layer on the surface of the first region of the ith transparent conductive layer among the N transparent conductive layers is connected to the first region of the i+1th transparent conductive layer, so that the The positive pole of the i-th sub-battery in the N sub-batteries is connected to the negative pole of the i+1-th sub-battery, that is, the series connection between the i-th sub-battery and the i+1-th sub-battery in the N sub-batteries, and the N sub-batteries The positive pole of the i-th sub-battery is connected to the negative pole of the (i+1)-th sub-battery, so that the series current direction of the N sub-batteries is parallel to the first direction.
所述薄膜太阳能电池包括N个旁路二极管，其中所述N个旁路二极管中第i个旁路二极管正极与所述第i个透明导电层第二区域相连，负极与第i+1个透明导电层第二区域相连，使得所述第i个旁路二极管正极与所述第i个子电池负极相连，负极与第i+1个子电池的负极相连，并使得当旁路二极管中有电流流过时，旁路二极管的电流方向平行于第一方向，即当旁路二极管中有电流流过时，旁路二极管的电流方向与所述薄膜太阳电池串联电流方向相同。已知所述N个子电池中第i个子电池的正极与第i+1个子电池的负极相连，从而使得所述第i个旁路二极管负极能够通过第i+1个子电池的负极与所述第i个子电池的正极相连，进而使得所述第i个旁路二极管正极与所述第i个子电池负极相连，负极与所述第i个子电池的正极相连，即使得所述第i个旁路二极管与所述第i个子电池反向并联。所述N个旁路二极管中第N个旁路二极管正极与所述N个透明导电层中第N个透明导电层第二区域相连，负极与所述第N个透明导电层第一区域表面的第一电极层相连，使得所述第N个旁路二极管的正极与所述第N个子电池的负极相连，负极与所述第N个子电池的正极相连，即使得所述第N个旁路二极管与所述第N个子电池反向并联。由此可见，本申请实施例所提供的薄膜太阳能电池中的各个子电池均反向并联了一个旁路二极管。The thin-film solar cell includes N bypass diodes, wherein the anode of the i-th bypass diode among the N bypass diodes is connected to the second region of the i-th transparent conductive layer, and the cathode is connected to the i+1-th transparent conductive layer. The second region of the conductive layer is connected so that the anode of the i-th bypass diode is connected to the cathode of the i-th sub-battery, and the cathode is connected to the cathode of the i+1-th sub-battery, so that when current flows in the bypass diode The current direction of the bypass diode is parallel to the first direction, that is, when a current flows through the bypass diode, the current direction of the bypass diode is the same as that of the thin film solar cell series current. It is known that the positive pole of the i-th sub-battery among the N sub-batteries is connected to the negative pole of the i+1-th sub-battery, so that the negative pole of the i-th bypass diode can be connected to the negative pole of the i-th sub-battery through the negative pole of the i+1-th sub-battery The anodes of the i sub-batteries are connected, so that the anode of the i-th bypass diode is connected to the cathode of the i-th sub-battery, and the cathode is connected to the anode of the i-th sub-battery, that is, the i-th bypass diode connected in antiparallel with the ith sub-battery. The anode of the Nth bypass diode among the N bypass diodes is connected to the second area of the Nth transparent conductive layer among the N transparent conductive layers, and the negative electrode is connected to the surface of the first area of the Nth transparent conductive layer. The first electrode layer is connected so that the anode of the Nth bypass diode is connected to the cathode of the Nth sub-cell, and the cathode is connected to the anode of the Nth sub-cell, that is, the Nth bypass diode connected in reverse parallel with the Nth sub-battery. It can be seen that each sub-cell in the thin-film solar cell provided by the embodiment of the present application is connected in reverse parallel with a bypass diode.
需要说明的是，通常情况下，薄膜太阳能电池中各子电池串联，并且串联电流取决于各子电池中的最小电流，当薄膜太阳能电池中的子电池的一个或多个由于产生缺陷或发生遮挡导致子电池电流减小时，会使得薄膜太阳能电池中各子电池的串联电流减小，从而使得薄膜太阳能电池整体电流减小。本申请实 施例所提供的薄膜太阳能电池各个子电池均均反向并联了一个旁路二极管，使得各子电池正常工作，没有由于产生缺陷或发生遮挡导致电流变小时，则与各子电池对应旁路二极管处于截止状态，不发挥旁路作用；若各子电池中一个或多个子电池产生缺陷或发生遮挡，使得该一个或多个子电池电流减小时，会使得子电池两端电压变小，在与电流变小的子电池相对应的旁路二极管两端的产生正向偏压，使得所述旁路二极管的耗尽层变窄，促使所述旁路二极管导通，起到旁路作用。It should be noted that, usually, the sub-cells in a thin-film solar cell are connected in series, and the series current depends on the minimum current in each sub-cell. When the current of the sub-cells is reduced, the series current of each sub-cell in the thin-film solar cell is reduced, thereby reducing the overall current of the thin-film solar cell. Each sub-cell of the thin-film solar cell provided in the embodiment of the present application is connected with a bypass diode in reverse parallel, so that each sub-cell can work normally, and the current becomes smaller due to defects or shading. The circuit diode is in the cut-off state and does not play a bypass role; if one or more sub-batteries in each sub-battery are defective or blocked, the current of the one or more sub-batteries decreases, the voltage at both ends of the sub-battery will decrease, and the A forward bias voltage is generated at both ends of the bypass diode corresponding to the sub-battery with reduced current, so that the depletion layer of the bypass diode is narrowed, and the bypass diode is turned on to play a bypass role.
已知多个子电池之间串联，其串联电流方向平行于第一方向，并且第i个旁路二极管正极与所述第i个子电池负极相连，负极与所述第i个子电池的正极相连，能够使得第i个旁路二极管正极与第i-1个子电池正极相连，负极与第i+1个子电池负极相连。当第i个子电池电流减小，其他子电池电流不变时，会使得第i+1个子电池负极与第i-1个子电池正极之间的电压差大于第i个子电池两端的电压差，将在第i个旁路二极管两端产生正向偏压。同理，若各子电池中一个或多个子电池产生缺陷或发生遮挡，使得该一个或多个子电池电流减小时，将在与电流变小的子电池反向并联的旁路二极管两端产生正向偏压，使得该旁路二极管的耗尽层变窄，促使所述旁路二极管导通，起到旁路作用，使得所述薄膜太阳能电池中各子电池的串联电流传输到产生缺陷或发生遮挡的子电池时，不流经产生缺陷或发生遮挡的子电池，流经与产生缺陷或发生遮挡的子电池反向并联的旁路二极管，避免所述薄膜太阳能电池中各子电池的串联电流流经产生缺陷或发生遮挡的子电池，进而避免所述薄膜太阳能电池中多个电池的串联电流变小，有助于改善所述薄膜太阳能电池由于一个子电池或多个子电池产生缺陷或发生遮挡，导致的薄膜太阳能电池整体电流减小的问题，从而有效降低薄膜太阳能电池的发电量损失，保证所述薄膜太阳能电池的发电量。It is known that a plurality of sub-batteries are connected in series, the direction of the series current is parallel to the first direction, and the anode of the i-th bypass diode is connected to the cathode of the i-th sub-battery, and the cathode is connected to the anode of the i-th sub-battery, which can make The positive pole of the i-th bypass diode is connected to the positive pole of the i-1th sub-battery, and the negative pole is connected to the negative pole of the i+1-th sub-battery. When the current of the i-th sub-battery decreases and the current of other sub-batteries remains unchanged, the voltage difference between the negative pole of the i+1-th sub-battery and the positive pole of the i-1-th sub-battery will be greater than the voltage difference between the two ends of the i-th sub-battery. A forward bias voltage is generated across the i-th bypass diode. Similarly, if one or more sub-batteries in each sub-battery are defective or blocked, so that when the current of the one or more sub-batteries decreases, a positive current will be generated at both ends of the bypass diode connected in antiparallel with the sub-battery with reduced current. The bias voltage makes the depletion layer of the bypass diode narrow, prompts the bypass diode to conduct, and acts as a bypass, so that the series current of each sub-cell in the thin-film solar cell is transmitted to generate defects or occur When the sub-battery is shaded, it does not flow through the sub-cell that produces defects or shades, but flows through the bypass diodes that are connected in reverse parallel with the sub-cells that generate defects or shade, so as to avoid the series current of each sub-cell in the thin film solar cell Flow through the sub-cells that generate defects or shading, thereby avoiding the series current of multiple cells in the thin-film solar cell from becoming smaller, and helping to improve the thin-film solar cells due to defects or shading of one sub-cell or multiple sub-cells , resulting in the reduction of the overall current of the thin-film solar cell, thereby effectively reducing the loss of power generation of the thin-film solar cell and ensuring the power generation of the thin-film solar cell.
并且，本申请实施例所提供的薄膜太阳能电池的旁路二极管位于透明导电层第二区域，即将旁路二极管嵌入组件内部，不需形成在接线盒内，有助于减小接线盒的尺寸，使得薄膜太阳能电池外观更具美感。Moreover, the bypass diode of the thin-film solar cell provided by the embodiment of the present application is located in the second region of the transparent conductive layer, that is, the bypass diode is embedded inside the module, and does not need to be formed in the junction box, which helps to reduce the size of the junction box, Make the appearance of the thin-film solar cell more aesthetically pleasing.
在上述实施例的基础上，在本申请的一个实施例中，如图3所示，所述旁路二极管40由上至下依次包括N型材料层41、P型材料层42以及第二电极层43，其中，其中，所述第i个旁路二极管40的N型材料层41覆盖所述第i个透明导电层20第二区域22部分表面，所述第i个旁路二极管40的P型材料层42覆盖所述第i个旁路二极管40的所述N型材料层41，所述第i个旁路二极管40的第二电极层43覆盖所述P型材料层42，且沿所述第一方向延伸，覆盖所述第i+1个透明导电层20第二区域22部分表面，以使得第i个旁路二极管40的正极与所述第i个透明导电层20第二区域22相连，负极与所述第i+1个透明导电层20第二区域22相连；所述第N个旁路二极管40的N型材料层41覆盖所述第N个透明导电层20第二区域22部分表面，所述第N个旁路二极管40的P型材料层42覆盖所述第N个旁路二极管40的所述N型材料层41，所述第N个旁路二极管40的第二电极层43覆盖所述第N个旁路二极管40的所述P型材料层42，且所述第N个旁路二极管40的所述第二电极层43与所述第N个透明导电层20第一区域21表面的第一电极层31相连，以使得第N个旁路二极管40正极与第N个透明导电层20第二区域22相连，负极与所述第N个透明导电层20第一区域21表面的第一电极层31相连。On the basis of the above-mentioned embodiments, in one embodiment of the present application, as shown in FIG. 3 , the bypass diode 40 includes an N-type material layer 41, a P-type material layer 42, and a second electrode from top to bottom. layer 43, wherein, wherein, the N-type material layer 41 of the ith bypass diode 40 covers part of the surface of the second region 22 of the ith transparent conductive layer 20, and the P of the ith bypass diode 40 The n-type material layer 42 covers the n-type material layer 41 of the ith bypass diode 40, the second electrode layer 43 of the i-th bypass diode 40 covers the p-type material layer 42, and along the extending in the first direction, covering part of the surface of the second region 22 of the i+1th transparent conductive layer 20, so that the anode of the ith bypass diode 40 is in contact with the second region 22 of the ith transparent conductive layer 20 The negative pole is connected to the second region 22 of the i+1th transparent conductive layer 20; the N-type material layer 41 of the Nth bypass diode 40 covers the second region 22 of the Nth transparent conductive layer 20 Part of the surface, the P-type material layer 42 of the Nth bypass diode 40 covers the N-type material layer 41 of the Nth bypass diode 40, and the second electrode of the Nth bypass diode 40 Layer 43 covers the P-type material layer 42 of the Nth bypass diode 40, and the second electrode layer 43 of the Nth bypass diode 40 is connected to the Nth transparent conductive layer 20 The first electrode layer 31 on the surface of a region 21 is connected, so that the anode of the Nth bypass diode 40 is connected to the second region 22 of the Nth transparent conductive layer 20, and the negative electrode is connected to the first region of the Nth transparent conductive layer 20 The first electrode layer 31 on the surface of 21 is connected.
可选的，在本申请的一个实施例中，所述N型材料层为磷掺杂ZnO材料层、磷掺杂Ta 2O 5材料层或磷掺杂非晶硅薄膜层；所述P型材料层为硼掺杂Cu 2O材料层、硼掺杂NiO材料层或硼掺杂非晶硅薄膜层；所述第二电极层为铜层、铝层或金层，但本申请实施例对此并不做限定，具体视情况而定。并且，所述N型材料层的厚度不大于500nm，所述P型材料层的厚度不大于500nm，但本申请实施例对此并不做限定，具体视情况而定。 Optionally, in one embodiment of the present application, the N-type material layer is a phosphorus-doped ZnO material layer, a phosphorus-doped Ta2O5 material layer, or a phosphorus-doped amorphous silicon film layer; the P- type The material layer is a boron-doped Cu2O material layer, a boron-doped NiO material layer, or a boron-doped amorphous silicon film layer; the second electrode layer is a copper layer, an aluminum layer, or a gold layer, but the embodiment of the present application does not This is not limited and depends on the situation. In addition, the thickness of the N-type material layer is not greater than 500 nm, and the thickness of the P-type material layer is not greater than 500 nm, but this is not limited in the embodiment of the present application, and it depends on the situation.
在上述实施例的基础上，在本申请的一个实施例中，如图4所示，所述子电池层叠结构30包括电荷传输层311和吸光层312，所述电荷传输层311包括第一电荷传输层313和第二电荷传输层314，其中，所述吸光层312覆盖所述第一电荷传输层313，所述第二电荷传输层314覆盖所述吸光层312，所述第一电极层31覆盖所述第二电荷传输层314，以形成沿第一方向依次排布的N 个子电池，其中，所述子电池层叠结构30形成在基板10第一表面，所述吸光层用于吸收光子，所述第一电荷传输层用于传输空穴，所述第二电荷传输层用于传输电子。On the basis of the above-mentioned embodiments, in one embodiment of the present application, as shown in FIG. transport layer 313 and a second charge transport layer 314, wherein the light absorbing layer 312 covers the first charge transport layer 313, the second charge transport layer 314 covers the light absorbing layer 312, and the first electrode layer 31 Covering the second charge transport layer 314 to form N sub-cells sequentially arranged along the first direction, wherein the sub-cell stack structure 30 is formed on the first surface of the substrate 10, the light-absorbing layer is used to absorb photons, The first charge transport layer is used to transport holes, and the second charge transport layer is used to transport electrons.
相应的，本申请实施例还提供了一种薄膜太阳能电池的制作方法，如图5所示，该制作方法包括：Correspondingly, the embodiment of the present application also provides a method for manufacturing a thin-film solar cell, as shown in FIG. 5 , the method includes:
S1：提供一基板；S1: providing a substrate;
S2：在所述基板第一侧表面形成沿第一方向依次排布的N个透明导电层，N≥2，所述透明导电层包括沿第二方向依次排布的第一区域和第二区域，其中，所述第一方向和所述第二方向均平行于所述基板第一侧表面，且所述第一方向与所述第二方向垂直。S2: Form N transparent conductive layers sequentially arranged along the first direction on the first side surface of the substrate, N≥2, and the transparent conductive layer includes a first region and a second region sequentially arranged along the second direction , wherein both the first direction and the second direction are parallel to the first side surface of the substrate, and the first direction is perpendicular to the second direction.
具体的，在所述基板第一表面形成沿第一方向依次排布的N个透明导电层包括：在所述基板第一表面形成透明导电材料层，所述透明导电材料层覆盖所述基板第一表面；形成所述透明导电材料层之后，对所述透明导电材料层进行激光划线，如图1所示，在所述基板10第一表面形成沿第一方向依次排布的N个透明导电层20，所述N个透明导电层20之间具有空隙，即述N个透明导电层20中相邻两个透明导电层不相接触；如图2所示，所述透明导电层20包括沿第一方向依次排布的第一区域21和第二区域22。Specifically, forming N transparent conductive layers sequentially arranged along the first direction on the first surface of the substrate includes: forming a transparent conductive material layer on the first surface of the substrate, and the transparent conductive material layer covers the second transparent conductive layer of the substrate. One surface; after the transparent conductive material layer is formed, laser scribing is performed on the transparent conductive material layer, as shown in FIG. Conductive layer 20, there is a gap between the N transparent conductive layers 20, that is, two adjacent transparent conductive layers in the N transparent conductive layers 20 are not in contact; as shown in Figure 2, the transparent conductive layer 20 includes The first area 21 and the second area 22 are arranged in sequence along the first direction.
S3：在所述N个透明导电层第一区域表面形成子电池层叠结构和覆盖所述子电池层叠结构的第一电极层，其中，所述N个透明导电层中第i个透明导电层第一区域表面的第一电极层与第i+1个透明导电层第一区域相连，1≤i≤N-1。S3: Form a sub-battery stacked structure and a first electrode layer covering the sub-battery stacked structure on the surface of the first region of the N transparent conductive layers, wherein the i-th transparent conductive layer among the N transparent conductive layers The first electrode layer on the surface of a region is connected to the first region of the (i+1)th transparent conductive layer, 1≤i≤N-1.
具体的，在本申请的一个实施例中，所述子电池层叠结构依次包括电荷传输层和吸光层，所述电荷传输层包括第一电荷传输层和第二电荷传输层；在所述N个透明导电层第一区域表面形成子电池层叠结构和覆盖所述子电池层叠结构的第一电极层包括：在所述N个透明导电层第二区域以及相邻两个透明导电层第二区域之间的空隙形成掩膜层；如图4所示，形成该掩膜层之后，在所述N个透明导电层20第一区域21形成第一电荷传输层313，形成所述第一 电荷传输层313之后，在所述第一电荷传输层313表面形成覆盖所述第一电荷传输层313的所述吸光层312，并在所述吸光层312表面形成所述第二电荷传输层314，以在所述N个透明导电层20第一区域21表面形成所述子电池层叠结构30；所述N个透明导电层20第一区域21表面形成所述子电池层叠结构30之后，在所述第二电荷传输层表面形成第一电极层，即在所述子电池层叠结构表面形成所述第一电极层31，以在所述N个透明导电层20第一区域21表面形成子电池层叠结构30和覆盖所述子电池层叠结构30的第一电极层31，从而形成沿第一方向依次排布的N个子电池。具体的，形成第一电极层包括：通过激光刻线工艺刻画所述子电池层叠结构，形成贯穿子电池层叠结构并延伸至相邻透明导电层表面的刻线槽，将第一电极层沉积在所述子电池层叠结构表面以及沉积到刻线槽中，以使得第i个子电池正极与所述第i+1个子电池的负极相连。Specifically, in one embodiment of the present application, the sub-battery stack structure sequentially includes a charge transport layer and a light absorbing layer, and the charge transport layer includes a first charge transport layer and a second charge transport layer; in the N The sub-battery stack structure formed on the surface of the first region of the transparent conductive layer and the first electrode layer covering the sub-cell stack structure include: between the N second transparent conductive layer regions and two adjacent second transparent conductive layer regions The gaps between form a mask layer; as shown in Figure 4, after forming the mask layer, a first charge transport layer 313 is formed in the first regions 21 of the N transparent conductive layers 20, forming the first charge transport layer After 313, the light absorbing layer 312 covering the first charge transport layer 313 is formed on the surface of the first charge transport layer 313, and the second charge transport layer 314 is formed on the surface of the light absorbing layer 312, so that The surface of the first region 21 of the N transparent conductive layers 20 forms the sub-cell laminated structure 30; The first electrode layer is formed on the surface of the charge transport layer, that is, the first electrode layer 31 is formed on the surface of the sub-battery stack structure, so as to form the sub-cell stack structure 30 and the first region 21 of the N transparent conductive layers 20. The first electrode layer 31 covering the sub-battery stack structure 30 forms N sub-batteries sequentially arranged along the first direction. Specifically, forming the first electrode layer includes: scribing the sub-battery stack structure through a laser scribing process, forming a scribe groove that penetrates the sub-cell stack structure and extends to the surface of the adjacent transparent conductive layer, and deposits the first electrode layer on the The surface of the sub-battery laminated structure is deposited into the line groove, so that the positive electrode of the i-th sub-battery is connected to the negative electrode of the i+1-th sub-battery.
S4：形成沿所述第一方向依次排布的N个旁路二极管，其中，所述N个旁路二极管中第i个旁路二极管正极与所述第i个透明导电层第二区域相连，负极与所述第i+1个透明导电层第二区域相连，所述N个旁路二极管中第N个旁路二极管正极与所述N个透明导电层中第N个透明导电层第二区域相连，负极与所述第N个透明导电层第一区域表面的第一电极层相连。S4: forming N bypass diodes sequentially arranged along the first direction, wherein the anode of the i-th bypass diode among the N bypass diodes is connected to the second region of the i-th transparent conductive layer, The negative electrode is connected to the second region of the i+1th transparent conductive layer, and the anode of the Nth bypass diode among the N bypass diodes is connected to the second region of the Nth transparent conductive layer among the N transparent conductive layers. The negative electrode is connected to the first electrode layer on the surface of the first region of the Nth transparent conductive layer.
具体的，在本申请实施例中，形成沿所述第一方向依次排布的N个旁路二极管包括：在所述透明导电层第二区域以外的区域形成掩膜层，形成该掩膜层之后，如图3所示，在所述N个透明导电层20第二区域22表面形成N型材料层41，所述N型材料层41覆盖所述N个透明导电层20第二区域22部分表面，并且可以沿第一方向延伸到与相邻透明导电层20第二区域22之间的空隙，覆盖该空隙部分区域，需要说明的是，相邻两个透明导电层20之间的空隙裸露基板，从而所述N型材料层41覆盖该空隙部分区域，即所述N型材料层41覆盖相邻两个透明导电层20第二区域22之间裸露的基板10的部分区域；形成所述N型材料层41之后，形成覆盖所述N型材料层41的P型材料层42；形成P型材料层42后，形成N个第二电极层43，其中，所述N个第 二电极层43中第i个第二电极层43覆盖所述第i个透明导电层20第二区域22表面的所述P型材料层42，并沿所述第一方向延伸覆盖所述第i+1个透明导电层20第二区域22部分表面，以使得第i个旁路二极管40的正极与所述第i个透明导电层20第二区域22相连，负极与所述第i+1个透明导电层20第二区域22相连，所述N个第二电极层43中第N个第二电极层43覆盖所述N个透明导电层20第二区域22表面的所述P型材料层42，且与所述第N个透明导电层20第一区域21表面的第一电极层31相连，以使得第N个旁路二极管40正极与第N个透明导电层20第二区域22相连，负极与所述第N个透明导电层20第一区域21表面的第一电极层31相连。需要说明的是，在本申请实施例中，如图3所示，为了使得所述第N个旁路二极管40的第二电极层43能够与所述第N个子电池的第一电极层31相连，该制作方法还包括在沿第一方向远离第N个透明导电层20的一侧形成了延伸到所述第N个子电池的第一电极层31下方的透明导电层44，并且该透明导电层44与所述第N个子电池的第一电极层相连，所述第N个旁路二极管40的第二电极层43覆盖延伸到所述第N个子电池的第一电极层31下方的透明导电层44部分，以使得所述第N个旁路二极管40的第二电极层43能够与所述第N个子电池的第一电极层31相连，但申请对此并不做限定，具体视情况而定。Specifically, in the embodiment of the present application, forming the N bypass diodes sequentially arranged along the first direction includes: forming a mask layer in a region other than the second region of the transparent conductive layer, forming the mask layer Afterwards, as shown in FIG. 3 , an N-type material layer 41 is formed on the surface of the second regions 22 of the N transparent conductive layers 20, and the N-type material layer 41 covers the second regions 22 of the N transparent conductive layers 20. surface, and can extend along the first direction to the gap between the second region 22 of the adjacent transparent conductive layer 20, covering the gap part area. It should be noted that the gap between two adjacent transparent conductive layers 20 is exposed The substrate, so that the N-type material layer 41 covers the gap part area, that is, the N-type material layer 41 covers the exposed part of the substrate 10 between the second areas 22 of two adjacent transparent conductive layers 20; forming the After the N-type material layer 41, a P-type material layer 42 covering the N-type material layer 41 is formed; after the P-type material layer 42 is formed, N second electrode layers 43 are formed, wherein the N second electrode layers 43, the i-th second electrode layer 43 covers the P-type material layer 42 on the surface of the second region 22 of the i-th transparent conductive layer 20, and extends along the first direction to cover the i+1th Part of the surface of the second region 22 of the transparent conductive layer 20, so that the anode of the i-th bypass diode 40 is connected to the second region 22 of the i-th transparent conductive layer 20, and the negative electrode is connected to the i+1-th transparent conductive layer 20 the second region 22 is connected, and the Nth second electrode layer 43 of the N second electrode layers 43 covers the P-type material layer 42 on the surface of the N transparent conductive layer 20 second region 22, and is connected with The first electrode layer 31 on the surface of the first region 21 of the Nth transparent conductive layer 20 is connected, so that the positive electrode of the Nth bypass diode 40 is connected to the second region 22 of the Nth transparent conductive layer 20, and the negative electrode is connected to the second region 22 of the Nth transparent conductive layer 20. The first electrode layer 31 on the surface of the first region 21 of the Nth transparent conductive layer 20 is connected. It should be noted that, in the embodiment of the present application, as shown in FIG. 3 , in order to enable the second electrode layer 43 of the Nth bypass diode 40 to be connected to the first electrode layer 31 of the Nth , the manufacturing method further includes forming a transparent conductive layer 44 extending below the first electrode layer 31 of the Nth sub-cell on the side away from the Nth transparent conductive layer 20 along the first direction, and the transparent conductive layer 44 is connected to the first electrode layer of the Nth sub-cell, and the second electrode layer 43 of the Nth bypass diode 40 covers the transparent conductive layer extending below the first electrode layer 31 of the Nth sub-cell 44, so that the second electrode layer 43 of the Nth bypass diode 40 can be connected to the first electrode layer 31 of the Nth sub-battery, but the application does not limit this, depending on the situation .
需要说明的是，由于所述N个第二电极层中第i个第二电极层覆盖所述第i个透明导电层第二区域表面的所述P型材料层，并沿所述第一方向延伸覆盖所述第i+1个透明导电层第二区域部分表面，使得所述N个第二电极层中第i个第二电极层与第i+1个子电池负极相连。由前述已知所述N个子电池中第i个子电池的正极与第i+1个子电池的负极相连，从而所述N个第二电极层中第i个第二电极层能够与第i个子电池的正极相连，即所述N个旁路二极管中第i个旁路二极管负极与第i个子电池的正极相连，又由于N个透明导电层第二区域依次形成有N型材料层和P型材料层，从而使得所述N个旁路二极管中第i个旁路二极管正极与第i个子电池的负极相连。所述N个旁路二极管中第N个旁路二极管覆盖所述N个透明导电层中第N个透明导电层第二区域部分 表面，且与所述第N个透明导电层第一区域表面的第一电极层相连，使得所述N个旁路二极管中第N个旁路二极管负极与第N个子电池的正极相连，正极与第N个子电池的负极相连。综上所述，所述薄膜太阳能电池中的每个子电池均具有一个与其反向并联的二极管。It should be noted that, since the i-th second electrode layer among the N second electrode layers covers the P-type material layer on the surface of the second region of the i-th transparent conductive layer, and along the first direction extending to cover part of the surface of the second region of the i+1th transparent conductive layer, so that the i-th second electrode layer among the N second electrode layers is connected to the negative electrode of the i+1-th sub-battery. It is known from the foregoing that the positive pole of the i-th sub-battery in the N sub-batteries is connected to the negative pole of the i+1-th sub-battery, so that the i-th second electrode layer among the N second electrode layers can be connected to the i-th sub-battery The anode of the i-th bypass diode is connected to the anode of the i-th sub-battery among the N bypass diodes, and because the second region of the N transparent conductive layers is sequentially formed with an N-type material layer and a P-type material layers, so that the anode of the i-th bypass diode among the N bypass diodes is connected to the cathode of the i-th sub-battery. The Nth bypass diode of the N bypass diodes covers part of the surface of the second area of the Nth transparent conductive layer among the N transparent conductive layers, and is connected to the surface of the first area of the Nth transparent conductive layer. The first electrode layers are connected so that the cathode of the Nth bypass diode among the N bypass diodes is connected to the anode of the Nth sub-battery, and the anode is connected to the cathode of the Nth sub-battery. To sum up, each sub-cell in the thin-film solar cell has a diode connected in reverse parallel to it.
需要说明的是，通常情况下，薄膜太阳能电池中各子电池串联，并且串联电流取决于各子电池中的最小电流，从而当薄膜太阳能电池中的子电池的一个或多个由于产生缺陷或发生遮挡导致子电池电流减小时，会使得薄膜太阳能电池中各子电池的串联电流减小，从而得薄膜太阳能电池整体电流减小。利用本申请实施例所提供的制作方法制得的薄膜太阳能电池各个子电池均具与其反向并联的旁路二极管，使得若各子电池正常工作，没有由于产生缺陷或发生遮挡导致电流变小，则与各子电池对应旁路二极管处于截止状态，不发挥旁路作用；若各子电池中一个或多个子电池产生缺陷或发生遮挡，使得该一个或多个子电池电流减小时，会使得子电池两端电压变小，在与电流变小的子电池相对应的旁路二极管两端的产生正向偏压，使得所述旁路二极管的耗尽层变窄，促使所述旁路二极管导通，起到旁路作用，使得该旁路二极管的耗尽层变窄，促使所述旁路二极管导通，起到旁路作用，使得所述薄膜太阳能电池中各子电池的串联电流传输到产生缺陷或发生遮挡的子电池时，不流经产生缺陷或发生遮挡的子电池，流经与产生缺陷或发生遮挡的子电池反向并联的旁路二极管，避免所述薄膜太阳能电池中各子电池的串联电流流经产生缺陷或发生遮挡的子电池，进而避免所述薄膜太阳能电池中多个电池的串联电流变小，有助于改善所述薄膜太阳能电池由于一个子电池或多个子电池产生缺陷或发生遮挡，导致的薄膜太阳能电池整体电流减小的问题，从而有效降低薄膜太阳能电池的发电量损失，保证所述薄膜太阳能电池的发电量。It should be noted that, usually, the sub-cells in a thin-film solar cell are connected in series, and the series current depends on the minimum current in each sub-cell, so that when one or more of the sub-cells in a thin-film solar cell is defective or occurs When the shading causes the sub-cell current to decrease, the series current of each sub-cell in the thin-film solar cell will decrease, thereby reducing the overall current of the thin-film solar cell. Each sub-cell of the thin-film solar cell manufactured by the manufacturing method provided in the embodiment of the present application has a bypass diode connected in reverse parallel to it, so that if each sub-cell works normally, the current does not decrease due to defects or shading. Then the bypass diodes corresponding to each sub-battery are in the cut-off state and do not play a bypass role; if one or more sub-batteries in each sub-battery are defective or blocked, when the current of the one or more sub-batteries is reduced, the sub-battery will The voltage at both ends becomes smaller, and a forward bias voltage is generated at both ends of the bypass diode corresponding to the sub-cell whose current becomes smaller, so that the depletion layer of the bypass diode is narrowed, and the bypass diode is turned on, Acting as a bypass, so that the depletion layer of the bypass diode is narrowed, prompting the bypass diode to be turned on, and acting as a bypass, so that the series current of each sub-cell in the thin film solar cell is transmitted to the defective Or when the sub-cells that are shaded, do not flow through the sub-cells that generate defects or shade, and flow through the bypass diodes that are anti-parallel with the sub-cells that generate defects or shade, so as to avoid the leakage of each sub-cell in the thin film solar cell. The series current flows through the sub-cells that are defective or blocked, thereby avoiding the reduction of the series current of multiple cells in the thin-film solar cell, which helps to improve the thin-film solar cell due to a sub-cell or a plurality of sub-cells. Shading causes the overall current reduction of the thin-film solar cell, thereby effectively reducing the loss of power generation of the thin-film solar cell and ensuring the power generation of the thin-film solar cell.
并且，利用本申请实施例所提供的制作方法制得的薄膜太阳能电池的旁路二极管位于透明导电层第二区域，将旁路二极管嵌入组件内部，不需形成在接线盒内，有助于减小接线盒的尺寸，使得薄膜太阳能电池外观更具美感。Moreover, the bypass diode of the thin-film solar cell manufactured by the manufacturing method provided in the embodiment of the present application is located in the second region of the transparent conductive layer, and the bypass diode is embedded in the module without being formed in the junction box, which helps to reduce the The small size of the junction box makes the appearance of the thin film solar cell more aesthetically pleasing.
可选的，在本申请的一个实施例中，所述N型材料层为磷掺杂ZnO材料层、磷掺杂Ta 2O 5材料层或磷掺杂非晶硅薄膜层；所述P型材料层为硼掺杂Cu 2O材料层、硼掺杂NiO材料层或硼掺杂非晶硅薄膜层；所述第二电极层为铜层、铝层或金层，但本申请实施例对此并不做限定，具体视情况而定。并且，所述N型材料层的厚度不大于500nm，所述P型材料层的厚度不大于500nm，但本申请实施例对此并不做限定，具体视情况而定。 Optionally, in one embodiment of the present application, the N-type material layer is a phosphorus-doped ZnO material layer, a phosphorus-doped Ta2O5 material layer, or a phosphorus-doped amorphous silicon film layer; the P- type The material layer is a boron-doped Cu2O material layer, a boron-doped NiO material layer, or a boron-doped amorphous silicon film layer; the second electrode layer is a copper layer, an aluminum layer, or a gold layer, but the embodiment of the present application does not This is not limited and depends on the situation. In addition, the thickness of the N-type material layer is not greater than 500 nm, and the thickness of the P-type material layer is not greater than 500 nm, but this is not limited in the embodiment of the present application, and it depends on the situation.
可选的，在本申请的一个实施例中，形成所述N型材料层的工艺为磁控溅射工艺或真空蒸镀工艺，形成所述P型材料层的工艺为磁控溅射工艺或真空蒸镀工艺，形成第二电极层的工艺为真空蒸镀工艺，但本申请实施例对此并不做限定，具体视情况而定。Optionally, in one embodiment of the present application, the process for forming the N-type material layer is a magnetron sputtering process or a vacuum evaporation process, and the process for forming the P-type material layer is a magnetron sputtering process or In the vacuum evaporation process, the process for forming the second electrode layer is a vacuum evaporation process, but this embodiment of the present application does not limit it, and it depends on the situation.
需要说明的是，由上述可知，旁路二极管的制作通常需要真空蒸镀设备和磁控溅射设备，而薄膜太阳能电池的制作通常也需要真空蒸镀设备和磁控溅射设备这两种设备，从而本申请能够在不增加额外设备投入的情况下，完成本申请实施例所提供的薄膜太阳能电池的制作。It should be noted that, as can be seen from the above, the manufacture of bypass diodes usually requires vacuum evaporation equipment and magnetron sputtering equipment, and the manufacture of thin film solar cells usually also requires vacuum evaporation equipment and magnetron sputtering equipment. , so that the present application can complete the fabrication of the thin-film solar cell provided by the embodiment of the present application without increasing investment in additional equipment.
综上所述，本申请实施例提供了一种薄膜太阳能电池及其制作方法，该薄膜太阳能电池包括：基板；位于所述基板第一侧表面沿第一方向依次排布的N个透明导电层，N≥2，所述透明导电层包括沿第二方向依次排布的第一区域和第二区域；位于所述第一区域表面的子电池层叠结构和覆盖所述子电池层叠结构的第一电极层，形成沿第一方向依次排布的N个子电池，其中，所述N个透明导电层中第i个透明导电层第一区域表面的第一电极层与第i+1个透明导电层第一区域相连，1≤i≤N-1；沿所述第一方向依次排布的N个旁路二极管，其中，所述N个旁路二极管中第i个旁路二极管正极与所述第i个透明导电层第二区域相连，负极与所述第i+1个透明导电层第二区域相连，所述N个旁路二极管中第N个旁路二极管正极与所述N个透明导电层中第N个透明导电层第二区域相连，负极与所述第N个透明导电层第一区域表面的第一电极层相连，使得本申请实施例所提供的薄膜太阳能电池中的各个子电池均具有与其反向并联的旁路二极管，能够避免所述薄膜太阳能电池中各子电池的串联电流流 经产生缺陷或发生遮挡的子电池，导致所述薄膜太阳能电池中各子电池的串联电流变小，有助于改善所述薄膜太阳能电池由于一个子电池或多个子电池产生缺陷或发生遮挡，导致的薄膜太阳能电池电流减小的问题，从而有效降低薄膜太阳能电池的发电量损失，保证所述薄膜太阳能电池的发电量。To sum up, the embodiment of the present application provides a thin-film solar cell and a manufacturing method thereof. The thin-film solar cell includes: a substrate; N transparent conductive layers arranged in sequence along the first direction on the first side surface of the substrate , N≥2, the transparent conductive layer includes a first region and a second region arranged in sequence along the second direction; a sub-battery stack structure located on the surface of the first region and a first An electrode layer, forming N sub-batteries arranged in sequence along the first direction, wherein, among the N transparent conductive layers, the first electrode layer on the surface of the first region of the i-th transparent conductive layer and the i+1-th transparent conductive layer The first area is connected, 1≤i≤N-1; N bypass diodes arranged in sequence along the first direction, wherein, among the N bypass diodes, the anode of the i-th bypass diode is connected to the anode of the first The second area of the i transparent conductive layer is connected, the negative electrode is connected to the second area of the i+1th transparent conductive layer, and the anode of the Nth bypass diode among the N bypass diodes is connected to the N transparent conductive layer. The second region of the Nth transparent conductive layer is connected to the second region, and the negative electrode is connected to the first electrode layer on the surface of the first region of the Nth transparent conductive layer, so that each sub-cell in the thin-film solar cell provided by the embodiment of the present application is Having a bypass diode connected in antiparallel to it can prevent the series current of each sub-cell in the thin-film solar cell from flowing through the sub-cell that has a defect or is shaded, so that the series current of each sub-cell in the thin-film solar cell becomes smaller , which helps to improve the thin-film solar cell current reduction problem due to defects or shading of one or more sub-cells in the thin-film solar cell, thereby effectively reducing the loss of power generation of the thin-film solar cell and ensuring that the thin-film solar cell The amount of electricity generated by the solar cell.
本说明书中各个部分采用并列和递进相结合的方式描述，每个部分重点说明的都是与其他部分的不同之处，各个部分之间相同相似部分互相参见即可。Each part in this manual is described in a parallel and progressive manner, and each part focuses on the difference from other parts, and the same and similar parts of each part can be referred to each other.
对所公开的实施例的上述说明，本说明书中各实施例中记载的特征可以相互替换或组合，使本领域专业技术人员能够实现或使用本申请。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的，本文中所定义的一般原理可以在不脱离本申请的精神或范围的情况下，在其它实施例中实现。因此，本申请将不会被限制于本文所示的实施例，而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。For the above description of the disclosed embodiments, the features recorded in each embodiment in this specification can be replaced or combined with each other, so that those skilled in the art can implement or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the application. Therefore, the present application will not be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (8)

  1. 一种薄膜太阳能电池，其特征在于，包括：A kind of thin-film solar cell, is characterized in that, comprises:
    基板：Substrate:
    位于所述基板第一表面沿第一方向依次排布的N个透明导电层，N≥2，所述透明导电层包括沿第二方向依次排布的第一区域和第二区域，其中，所述第一方向和所述第二方向均平行于所述基板第一表面，且所述第一方向与所述第二方向垂直；N transparent conductive layers arranged in sequence along the first direction on the first surface of the substrate, N≥2, the transparent conductive layer includes a first region and a second region arranged in sequence along the second direction, wherein the Both the first direction and the second direction are parallel to the first surface of the substrate, and the first direction is perpendicular to the second direction;
    位于所述第一区域表面的子电池层叠结构和覆盖所述子电池层叠结构的第一电极层，第i个透明导电层第一区域表面的第一电极层与第i+1个透明导电层第一区域相连，1≤i≤N-1；The sub-battery stacked structure on the surface of the first region and the first electrode layer covering the sub-battery stacked structure, the first electrode layer on the surface of the first region of the ith transparent conductive layer and the i+1th transparent conductive layer The first area is connected, 1≤i≤N-1;
    沿所述第一方向依次排布的N个旁路二极管，其中，第i个旁路二极管正极与所述第i个透明导电层第二区域相连，负极与所述第i+1个透明导电层第二区域相连，第N个旁路二极管正极与第N个透明导电层第二区域相连，负极与所述第N个透明导电层第一区域表面的第一电极层相连。N bypass diodes arranged in sequence along the first direction, wherein the anode of the i-th bypass diode is connected to the second region of the i-th transparent conductive layer, and the cathode is connected to the i+1-th transparent conductive layer The second region of the layer is connected, the anode of the Nth bypass diode is connected to the second region of the Nth transparent conductive layer, and the negative electrode is connected to the first electrode layer on the surface of the first region of the Nth transparent conductive layer.
  2. 根据权利要求1所述的薄膜太阳能电池，其特征在于，所述旁路二极管由下至上依次包括N型材料层、P型材料层、第二电极层，其中，所述第i个旁路二极管的N型材料层覆盖所述第i个透明导电层第二区域部分表面，P型材料层覆盖所述N型材料层，第二电极层覆盖所述P型材料层，且沿所述第一方向延伸，覆盖所述第i+1个透明导电层第二区域部分表面；所述第N个旁路二极管的N型材料层覆盖所述第N个透明导电层第二区域部分表面，P型材料层覆盖所述N型材料层，第二电极层覆盖所述P型材料层，且所述第N个旁路二极管的所述第二电极层与所述第N个透明导电层第一区域表面的所述第一电极层相连。The thin-film solar cell according to claim 1, wherein the bypass diodes sequentially comprise an N-type material layer, a P-type material layer, and a second electrode layer from bottom to top, wherein the ith bypass diode The N-type material layer covers part of the surface of the second region of the ith transparent conductive layer, the P-type material layer covers the N-type material layer, the second electrode layer covers the P-type material layer, and along the first extending in a direction, covering part of the surface of the second region of the i+1th transparent conductive layer; the N-type material layer of the Nth bypass diode covers part of the surface of the second region of the Nth transparent conductive layer, P-type The material layer covers the N-type material layer, the second electrode layer covers the P-type material layer, and the second electrode layer of the Nth bypass diode is connected to the first region of the Nth transparent conductive layer The first electrode layer on the surface is connected.
  3. 根据权利要求2所述的薄膜太阳能电池，其特征在于，所述N型材料 层为磷掺杂ZnO材料层、磷掺杂Ta 2O 5材料层或磷掺杂非晶硅薄膜层；所述P型材料层的材料为硼掺杂Cu 2O材料层、硼掺杂NiO材料层或硼掺杂非晶硅薄膜层；所述第二电极层为铜层、铝层或金层。 The thin film solar cell according to claim 2, wherein the N-type material layer is a phosphorus-doped ZnO material layer, a phosphorus-doped Ta2O5 material layer or a phosphorus-doped amorphous silicon thin film layer ; The material of the P-type material layer is a boron-doped Cu 2 O material layer, a boron-doped NiO material layer or a boron-doped amorphous silicon film layer; the second electrode layer is a copper layer, an aluminum layer or a gold layer.
  4. 根据权利要求1所述的薄膜太阳能电池，其特征在于，所述子电池层叠结构包括电荷传输层和吸光层，所述电荷传输层包括第一电荷传输层和第二电荷传输层，其中，所述吸光层覆盖所述第一电荷传输层，所述第二电荷传输层覆盖所述吸光层，所述第一电极层覆盖所述第二电荷传输层。The thin film solar cell according to claim 1, wherein the sub-cell laminated structure comprises a charge transport layer and a light absorbing layer, and the charge transport layer comprises a first charge transport layer and a second charge transport layer, wherein the The light absorbing layer covers the first charge transport layer, the second charge transport layer covers the light absorbing layer, and the first electrode layer covers the second charge transport layer.
  5. 一种薄膜太阳能电池制作方法，其特征在于，包括：A method for manufacturing a thin-film solar cell, comprising:
    提供一基板；providing a substrate;
    在所述基板第一表面形成沿第一方向依次排布的N个透明导电层，N≥2，所述透明导电层包括沿第二方向依次排布的第一区域和第二区域，其中，所述第一方向和所述第二方向均平行于所述基板第一表面，且所述第一方向与所述第二方向垂直；N transparent conductive layers arranged in sequence along the first direction are formed on the first surface of the substrate, N≥2, and the transparent conductive layer includes a first region and a second region arranged in sequence along the second direction, wherein, Both the first direction and the second direction are parallel to the first surface of the substrate, and the first direction is perpendicular to the second direction;
    在所述N个透明导电层第一区域表面形成子电池层叠结构和覆盖所述子电池层叠结构的第一电极层，其中，第i个透明导电层第一区域表面的第一电极层与第i+1个透明导电层第一区域相连，1≤i≤N-1；A sub-battery stack structure and a first electrode layer covering the sub-battery stack structure are formed on the surface of the first regions of the N transparent conductive layers, wherein the first electrode layer on the surface of the first region of the i-th transparent conductive layer is connected to the first electrode layer on the surface of the first region of the transparent conductive layer. i+1 first regions of transparent conductive layers are connected, 1≤i≤N-1;
    形成沿所述第一方向依次排布的N个旁路二极管，其中，第i个旁路二极管正极与所述第i个透明导电层第二区域相连，负极与所述第i+1个透明导电层第二区域相连，第N个旁路二极管正极与第N个透明导电层第二区域相连，负极与所述第N个透明导电层第一区域表面的第一电极层相连。forming N bypass diodes sequentially arranged along the first direction, wherein the anode of the i-th bypass diode is connected to the second region of the i-th transparent conductive layer, and the cathode is connected to the i+1-th transparent conductive layer The second area of the conductive layer is connected, the anode of the Nth bypass diode is connected to the second area of the Nth transparent conductive layer, and the negative electrode is connected to the first electrode layer on the surface of the first area of the Nth transparent conductive layer.
  6. 根据权利要求5所述的制作方法，其特征在于，在所述基板第一表面形成沿第一方向依次排布的N个透明导电层包括：The manufacturing method according to claim 5, wherein forming N transparent conductive layers sequentially arranged along the first direction on the first surface of the substrate comprises:
    在所述基板第一表面形成透明导电材料层；forming a transparent conductive material layer on the first surface of the substrate;
    对所述透明导电材料层进行激光划线，形成沿所述第一方向依次排布的所述N个透明导电层。Laser scribing is performed on the transparent conductive material layer to form the N transparent conductive layers sequentially arranged along the first direction.
  7. 根据权利要求5所述的制作方法，其特征在于，形成沿所述第一方向依次排布的N个旁路二极管包括：The manufacturing method according to claim 5, wherein forming the N bypass diodes sequentially arranged along the first direction comprises:
    在所述N个透明导电层第二区域表面形成N型材料层，所述N型材料层覆盖所述N个透明导电层第二区域部分表面；An N-type material layer is formed on the surfaces of the N second regions of the transparent conductive layers, and the N-type material layer covers part of the surfaces of the N second regions of the transparent conductive layers;
    形成所述N型材料层之后，形成覆盖所述N型材料层的P型材料层；After forming the N-type material layer, forming a P-type material layer covering the N-type material layer;
    形成N个第二电极层，所述N个第二电极层中第i个第二电极层覆盖所述第i个透明导电层第二区域表面的所述P型材料层，并沿所述第一方向延伸，覆盖所述第i+1个透明导电层第二区域部分表面，所述N个第二电极层中第N个第二电极层覆盖所述N个透明导电层第二区域表面的所述P型材料层，且与所述第N个透明导电层第一区域表面的第一电极层相连。N second electrode layers are formed, and the i-th second electrode layer of the N second electrode layers covers the P-type material layer on the surface of the second region of the i-th transparent conductive layer, and along the Extending in one direction, covering part of the surface of the second region of the i+1th transparent conductive layer, the Nth second electrode layer of the N second electrode layers covering the surface of the second region of the N transparent conductive layers The P-type material layer is connected to the first electrode layer on the surface of the first region of the Nth transparent conductive layer.
  8. 根据权利要求5所述的制作方法，其特征在于，所述子电池层叠结构包括电荷传输层和吸光层，所述电荷传输层包括第一电荷传输层和第二电荷传输层；在所述N个透明导电层第一区域表面形成子电池层叠结构和覆盖所述子电池层叠结构的第一电极层包括：The manufacturing method according to claim 5, wherein the sub-battery stack structure includes a charge transport layer and a light absorbing layer, and the charge transport layer includes a first charge transport layer and a second charge transport layer; in the N The surface of the first region of the transparent conductive layer forms a sub-battery stack structure and the first electrode layer covering the sub-battery stack structure includes:
    在所述N个透明导电层第一区域表面形成所述第一电荷传输层；forming the first charge transport layer on the surface of the first regions of the N transparent conductive layers;
    在所述第一电荷传输层表面形成覆盖所述第一电荷传输层的所述吸光层，并在所述吸光层表面形成所述第二电荷传输层，以在所述N个透明导电层第一区域表面形成所述子电池层叠结构；The light absorbing layer covering the first charge transport layer is formed on the surface of the first charge transport layer, and the second charge transport layer is formed on the surface of the light absorbing layer, so that the Nth transparent conductive layer The sub-battery stack structure is formed on the surface of a region;
    在所述N个透明导电层第一区域表面形成所述子电池层叠结构之后，在所述第二电荷传输层表面形成所述第一电极层，以形成覆盖所述子电池层叠结构的所述第一电极层。After the sub-battery stack structure is formed on the surface of the first regions of the N transparent conductive layers, the first electrode layer is formed on the surface of the second charge transport layer to form the sub-cell stack structure covering the first electrode layer.
PCT/CN2022/099760 2021-10-27 2022-06-20 Thin-film solar cell and manufacturing method therefor WO2023071233A1 (en)

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CN101405873A (en) * 2006-09-04 2009-04-08 Lg电子株式会社 Thin-film type solar cell including by-pass diode and manufacturing method thereof
CN101421846A (en) * 2006-04-13 2009-04-29 壳牌可再生能源有限公司 Solar module
CN113243051A (en) * 2018-12-20 2021-08-10 于利希研究中心有限公司 Circuit arrangement for generating electricity with series-connected solar cells having bypass diodes

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Publication number Priority date Publication date Assignee Title
CN101421846A (en) * 2006-04-13 2009-04-29 壳牌可再生能源有限公司 Solar module
CN101405873A (en) * 2006-09-04 2009-04-08 Lg电子株式会社 Thin-film type solar cell including by-pass diode and manufacturing method thereof
CN113243051A (en) * 2018-12-20 2021-08-10 于利希研究中心有限公司 Circuit arrangement for generating electricity with series-connected solar cells having bypass diodes

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