WO2023043332A1 - Élément thermoélectrique - Google Patents
Élément thermoélectrique Download PDFInfo
- Publication number
- WO2023043332A1 WO2023043332A1 PCT/RU2022/050151 RU2022050151W WO2023043332A1 WO 2023043332 A1 WO2023043332 A1 WO 2023043332A1 RU 2022050151 W RU2022050151 W RU 2022050151W WO 2023043332 A1 WO2023043332 A1 WO 2023043332A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- thermoelectric element
- layer
- metal
- thermoelectric
- utility
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 26
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 23
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 239000000853 adhesive Substances 0.000 claims description 9
- 230000001070 adhesive effect Effects 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 238000005476 soldering Methods 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- 229910018100 Ni-Sn Inorganic materials 0.000 claims description 3
- 229910018532 Ni—Sn Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 238000001816 cooling Methods 0.000 abstract description 6
- 239000004411 aluminium Substances 0.000 abstract 1
- 230000001351 cycling effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 30
- 239000000463 material Substances 0.000 description 6
- 239000000446 fuel Substances 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910002899 Bi2Te3 Inorganic materials 0.000 description 1
- 229910002665 PbTe Inorganic materials 0.000 description 1
- 229910017629 Sb2Te3 Inorganic materials 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
Definitions
- the utility model relates to the field of thermoelectric devices and can be used as a thermoelectric element used in thermoelectric cooling modules or in thermoelectric generators, which are mainly operated under conditions of multiple thermal cycling.
- thermoelectric element disclosed in RU 51288 U1 , publ. 01/27/2006, prototype.
- FC used in thermoelectric cooling modules contains semiconductor branches of n- and p-type conductivity, connected by switching buses, which are connected respectively to the cooling and heat-removing heat exchange plates, characterized in that each of the switching buses located on at least one of the heat exchange plates, attached to it by means of a heat-contact connection, made in the form of a layer of elastic adhesive compound.
- FC The disadvantage of the FC disclosed above is the low thermal conductivity of the known adhesive heat-conducting compounds, which reduces the speed of temperature fronts in cyclic applications and introduces parasitic thermal resistance in static FC applications, reducing their efficiency.
- FC is known from the prior art, disclosed in RU 51288 U1, publ. 01/27/2006, prototype.
- FC used in thermoelectric cooling modules contains a matrix of thermoelectric pairs, each of which is formed by a semiconductor material of n- and p-types of conductivity, electrically connected to each other in a series using switching buses and located in the form of a sandwich structure between two heat-conducting plates.
- an adhesive layer of an organometallic compound is located on the side of the switching busbar and a layer of silicone-based material.
- FC The disadvantage of the FC disclosed above is the low thermal conductivity of known adhesive heat-conducting compounds, which reduces the speed of temperature fronts in cyclic applications and introduces parasitic thermal resistance in static FC applications, reducing their efficiency.
- the objective of the claimed utility model is to develop a thermoelectric module with an extended service life.
- the technical result of the claimed utility model is to increase the service life of the thermoelectric element.
- SUBSTITUTE SHEET (RULE 26)
- the specified technical result is achieved due to the fact that the fuel cell contains semiconductor branches of n- and p-types of conductivity, interconnected by metal buses into an electrical circuit, while an aluminum layer is located between the semiconductor branches of n- and p-types of conductivity and metal tires.
- the thickness of the aluminum layer is 80-200 microns.
- an adhesive metal layer in the form of at least one metal selected from the group: Mo, V, Cr, Ni or Ni-Sn intermetallic compound.
- a layer of brazing metal is applied over the aluminum layer, selected from the group: Ni, Cu.
- thermoelectric element (option 1).
- thermoelectric element (option 2).
- thermoelectric element (option 3).
- the thickness of the aluminum layer (4) is 80-200 ⁇ m.
- the thickness of the aluminum layer to ensure the removal of mechanical stress due to the plastic properties of aluminum.
- the difference developed by the thermoelectric element is up to 70 C, the indicated interval of the layer thickness was experimentally established, which does not lead to exfoliation of the aluminum layer or loss of ductility.
- an adhesive metal layer (3) in the form of at least one metal selected from the group: Mo, V, Cr, Ni or an intermetallic compound Ni -Sn.
- a layer of aluminum (4) with a thickness of 80-200 microns is applied to the washer of the n-type semiconductor material by the gas-dynamic method or by the plasma method. Then by soldering on a layer of aluminum (4). If necessary, an adhesive metal layer (3) is applied between the n-type semiconductor material and the aluminum layer (4) in the form of at least one metal selected from the group: Mo, V, Cr, Ni or intermetallic Ni-Sn compound, which ensures good adhesion of this layer to the semiconductor. After these operations, the washer is cut into branches of the n-type semiconductor material (1). Similarly, branches of p-type semiconductor material (1) are obtained. Next, take the required number of n-type and p-type semiconductor legs with the above layers deposited on them, and by soldering the aluminum layer is connected to metal tires (5) to form a thermoelectric element.
- soldering is carried out with solders that are not suitable for soldering aluminum, then to ensure further switching of metal tires (5), a layer (6) of soldering metal (for example, Ni, Cu) is applied over the aluminum layer (4) in the same ways as the adhesive metal layer (3).
- soldering metal for example, Ni, Cu
- the principle of operation of the claimed FC is that a constant voltage is applied to the metal tires (5) of the FC.
- the current passes through semiconductor branches (1,2) of n- and p-types of conductivity (in the case of the use of fuel cells in thermoelectric cooling modules), a certain amount of heat is absorbed on one of the heat-conducting plates, and on the other plate a certain amount of heat is released in accordance with the effect Peltier.
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Ce modèle d'utilité se rapporte au domaine des dispositifs thermoélectriques et peut être utilisé en qualité d'élément thermoélectrique que l'on utilise dans des modules de refroidissement thermoélectriques ou des générateurs thermoélectriques, que l'on utilise principalement dans des conditions de cyclage thermique répété. Le résultat technique de ce modèle d'utilité consiste en une augmentation de la durée d'utilisation de l'élément thermoélectrique. Cet élément thermoélectrique comprend des branches semi-conductrices ayant une conductivité de type n et p, qui sont connectées entre elles par des bus métalliques en un circuit électrique; une couche d'aluminium est disposée entre les branches semi-conductrices ayant une conductivité de type n et p.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2021127478 | 2021-09-20 | ||
| RU2021127478 | 2021-09-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2023043332A1 true WO2023043332A1 (fr) | 2023-03-23 |
Family
ID=85603328
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/RU2022/050151 WO2023043332A1 (fr) | 2021-09-20 | 2022-05-13 | Élément thermoélectrique |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO2023043332A1 (fr) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU10289U1 (ru) * | 1998-12-16 | 1999-06-16 | Специализированное конструкторско-технологическое бюро "Норд" | Термоэлектрический охлаждающий модуль |
| RU2151451C1 (ru) * | 1996-11-15 | 2000-06-20 | Ситизен Вотч Ко., Лтд. | Способ изготовления термоэлектрического устройства |
| US20150357542A1 (en) * | 2012-12-20 | 2015-12-10 | Valeo Systemes Thermiques | Assembly comprising a thermoelectric element and a means for electrically connecting said thermoelectric element, module and thermoelectric device comprising such an assembly |
| KR20160002608A (ko) * | 2015-12-07 | 2016-01-08 | 홍익대학교 산학협력단 | 써멀비아전극을 구비한 열전모듈 및 그 제조방법 |
| KR20170135538A (ko) * | 2016-05-31 | 2017-12-08 | 엘지이노텍 주식회사 | 열전 소자 |
-
2022
- 2022-05-13 WO PCT/RU2022/050151 patent/WO2023043332A1/fr unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2151451C1 (ru) * | 1996-11-15 | 2000-06-20 | Ситизен Вотч Ко., Лтд. | Способ изготовления термоэлектрического устройства |
| RU10289U1 (ru) * | 1998-12-16 | 1999-06-16 | Специализированное конструкторско-технологическое бюро "Норд" | Термоэлектрический охлаждающий модуль |
| US20150357542A1 (en) * | 2012-12-20 | 2015-12-10 | Valeo Systemes Thermiques | Assembly comprising a thermoelectric element and a means for electrically connecting said thermoelectric element, module and thermoelectric device comprising such an assembly |
| KR20160002608A (ko) * | 2015-12-07 | 2016-01-08 | 홍익대학교 산학협력단 | 써멀비아전극을 구비한 열전모듈 및 그 제조방법 |
| KR20170135538A (ko) * | 2016-05-31 | 2017-12-08 | 엘지이노텍 주식회사 | 열전 소자 |
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