WO2023037618A1 - 半導体製造用液体供給装置 - Google Patents
半導体製造用液体供給装置 Download PDFInfo
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- WO2023037618A1 WO2023037618A1 PCT/JP2022/012177 JP2022012177W WO2023037618A1 WO 2023037618 A1 WO2023037618 A1 WO 2023037618A1 JP 2022012177 W JP2022012177 W JP 2022012177W WO 2023037618 A1 WO2023037618 A1 WO 2023037618A1
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- flow rate
- semiconductor manufacturing
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- concentration
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- 239000007788 liquid Substances 0.000 title claims abstract description 92
- 239000004065 semiconductor Substances 0.000 title claims abstract description 85
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 79
- 230000007246 mechanism Effects 0.000 claims abstract description 42
- 239000000126 substance Substances 0.000 claims description 38
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- 238000004140 cleaning Methods 0.000 abstract description 68
- 230000033116 oxidation-reduction process Effects 0.000 abstract description 28
- 229910021642 ultra pure water Inorganic materials 0.000 abstract description 18
- 239000012498 ultrapure water Substances 0.000 abstract description 18
- 239000003607 modifier Substances 0.000 abstract description 14
- 239000000243 solution Substances 0.000 description 43
- 239000003795 chemical substances by application Substances 0.000 description 24
- 235000012431 wafers Nutrition 0.000 description 22
- 238000000034 method Methods 0.000 description 15
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- 239000000463 material Substances 0.000 description 10
- 238000004090 dissolution Methods 0.000 description 8
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- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 235000011114 ammonium hydroxide Nutrition 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
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- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000003929 acidic solution Substances 0.000 description 3
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- 239000012670 alkaline solution Substances 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
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- 230000004044 response Effects 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 2
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- 239000002253 acid Substances 0.000 description 2
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- 150000002739 metals Chemical class 0.000 description 2
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- 239000011733 molybdenum Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 241000894006 Bacteria Species 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
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- 238000001312 dry etching Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
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- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
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- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 229910017604 nitric acid Inorganic materials 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000000108 ultra-filtration Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K1/00—Lift valves or globe valves, i.e. cut-off apparatus with closure members having at least a component of their opening and closing motion perpendicular to the closing faces
- F16K1/32—Details
- F16K1/54—Arrangements for modifying the way in which the rate of flow varies during the actuation of the valve
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Definitions
- the present invention suppresses corrosion and dissolution of wiring materials exposed in fine trenches and pores formed by dry etching or the like, or deliquescent compounds used in gates, in the cleaning and rinsing process of semiconductor wafers.
- the present invention relates to a liquid supply apparatus for semiconductor manufacturing capable of efficiently and stably supplying a solution containing an acid, an alkali, an organic solvent, or the like for manufacturing semiconductors.
- semiconductor manufacturing liquid liquids (hereinafter referred to as semiconductor manufacturing liquid) is required. Furthermore, a material such as MgO or La 2 O 3 that exhibits deliquescence in water itself may be used as the gate material. cannot be avoided.
- semiconductor manufacturing liquids are mainly used as cleaning and rinsing liquids in single-wafer cleaning apparatuses.
- This liquid for semiconductor manufacturing uses ultrapure water as a basic material, and contains necessary amounts of acid/alkali, oxidizing agent/reducing agent, etc. in order to give liquid properties such as pH and oxidation-reduction potential that match the purpose of cleaning and rinsing processes. It is prepared by adding agents.
- ultrapure water is used as a diluent for the chemical solution.
- reducing, alkaline, and acidic gases such as H 2 , NH 3 , and O 3 may be dissolved in ultrapure water, and are used differently depending on the application.
- Methods for supplying such a semiconductor manufacturing liquid include a method using a pump and a method using a closed container and pressurization with an inert gas such as N2 , each of which has been put to practical use.
- the performance of the equipment that supplies semiconductor manufacturing liquid adjusted to a low concentration to a point of use consisting of multiple single-wafer cleaning equipment cannot follow up on flow rate fluctuations due to changes in the number of equipment in operation. This is most important from the viewpoint of yield improvement.
- the single-wafer cleaning equipment which is a point of use, is using a cleaning solution that has already been adjusted to a low concentration at a constant flow rate. Frequent changes in the flow rate of the cleaning solution are dealt with by a feedback control system using a flow meter and a water quality meter, or by a proportional control system using a flow meter.
- a feedback control system using a flow meter and a water quality meter
- a proportional control system using a flow meter.
- the concentration control in the middle of the water flow channel with any control method.
- the concentration followability to flow rate fluctuations is not high, and there is a limit to how stringent concentration control required by the semiconductor industry can be handled with only a flow meter and its feedback control or proportional control.
- tank storage type cleaning solution supply device in which the cleaning solution diluted to a low concentration is temporarily stored in a tank and then sent by gas pressurization or a pump. Since the liquid cannot be sent, there are restrictions on the use in wafer cleaning equipment. On the other hand, if the tank capacity is too large, it takes time to store the liquid for manufacturing semiconductors, and it is necessary to secure an installation space, which is inconvenient. Furthermore, in the tank storage type, the cleaning solution in the tank must be once discarded each time the wafer cleaning apparatus side requests a change in concentration, which is not a good idea from the viewpoint of the environmental load.
- the solute concentration is controlled by various methods such as PID control in response to the concentration monitor signal and proportional control to the ultrapure water flow rate so that the solute concentration falls within the desired range.
- PID control in response to the concentration monitor signal and proportional control to the ultrapure water flow rate so that the solute concentration falls within the desired range.
- a flow rate using a magnet mechanism for the purpose of precisely controlling the amount of dissolution or mixing of a functional fluid in ultrapure water to generate functional water with an accurate functional fluid concentration
- Patent Document 2 discloses a flow meter that measures the flow rate of the main fluid and outputs a signal of the measured value as a flow rate control method, and a cleaning device that controls the supply amount of another fluid based on the input signal.
- a flow rate control mechanism for a gas-dissolved water supply device has been proposed. Further, in Patent Document 3, there is a liquid processing supply device for substrates that controls the concentration by applying feedback control to a flow control valve based on the flow rate value described in the recipe of wafer cleaning water used in a single-wafer cleaning apparatus. Proposed.
- the flow rate adjusting means using the magnet mechanism described in Patent Document 1 is capable of accurate mixing, but has the problem of insufficient followability when the flow rate fluctuates.
- the flow rate control method of the cleaning gas-dissolved water supply device described in Patent Document 2 when applied to the single-wafer cleaning device, the amount used in the single-wafer cleaning device changes during liquid feeding. There is a problem that the flow followability is not sufficient when Furthermore, the supply device for liquid treatment to the substrate of Patent Document 3 has a problem that it is difficult to control the minute concentration when the flow rate of the single-wafer cleaning apparatus fluctuates.
- the present invention has been made in view of the above problems. It is an object of the present invention to provide a semiconductor manufacturing liquid supply apparatus capable of supplying a liquid for semiconductor manufacturing.
- the present invention provides a supply pipe for supplying a solvent, a preparation section for preparing a semiconductor manufacturing liquid having a predetermined concentration by adding a predetermined amount of chemical solution to the solvent, a concentration control unit that manages the preparation unit so that the semiconductor manufacturing liquid has a predetermined chemical solution concentration, and the supply pipe is a drain pipe connected to the supply pipe after the concentration control unit.
- a main pipe that communicates with the use point is branched from the connecting portion of this drain pipe, and the main pipe is provided with a flow rate measuring means, and the drain pipe corresponds to the measurement value of the flow rate measuring means.
- a liquid supply apparatus for semiconductor manufacturing which is provided with a flow rate adjustment mechanism capable of controlling the flow rate (Invention 1).
- the total flow rate of the main pipe and the drain pipe is set to approximately the maximum use amount of the point of use, and the flow rate of the drain pipe is varied by the flow rate adjustment mechanism, so that the main pipe It is preferable that the flow rate of is controllable (Invention 2).
- the total flow rate of the main pipe and the drain pipe is set as the maximum flow rate required in the wafer cleaning apparatus, and the flow rate of the two flow paths of the main pipe and the drain pipe is set to the flow rate of the drain pipe.
- the opening of the flow control valve By adjusting the opening of the flow control valve, the flow rate of the drain pipe can be changed according to the fluctuation of the usage amount at the point of use, so that the liquid for semiconductor manufacturing can be supplied to the point of use without any concentration fluctuation.
- the flow rate adjustment mechanism is a valve, and the flow rate is adjusted by adjusting the opening of the valve (Invention 3). Further, in the above inventions (inventions 1 and 2), it is preferable that the flow rate adjustment mechanism is a flow rate adjustment valve or a constant pressure valve (invention 4).
- the flow rate of the drain pipe is adjusted by a valve, a flow control valve, a constant pressure valve, etc., so that an amount of the semiconductor manufacturing liquid corresponding to the usage amount of the point of use is supplied to the main pipe. can be supplied.
- invention 5 by controlling the addition amount of the chemical liquid with respect to the flow rate of the solvent such as ultrapure water by these injection means, it is possible to supply the semiconductor manufacturing liquid with the desired concentration. can do.
- the chemical solution is a conductive solute
- the concentration control unit has a conductivity meter or an absorptiometer, and the measured value of the conductivity meter or absorptiometer Based on this, it is preferable that the addition amount of the chemical solution can be controlled (invention 6).
- the concentration of the chemical solution which is the conductive solute of the liquid for semiconductor manufacturing, is calculated based on the measured value of the conductivity meter or the absorption photometer, and the injection amount of the chemical solution is determined based on this calculated value.
- the concentration of the chemical solution is calculated based on the measured value of the conductivity meter or the absorption photometer, and the injection amount of the chemical solution is determined based on this calculated value.
- the chemical solution is a non-conductive solute
- the concentration control unit has a TOC meter or an absorptiometer, and based on the measured value of the TOC meter or absorptiometer, It is preferable that the amount of the chemical solution to be added can be controlled (invention 7).
- the concentration of the chemical, which is a non-conductive solute, in the liquid for semiconductor manufacturing is calculated based on the measurement value of the TOC meter or the absorption photometer, and the injection amount of the chemical is determined based on this calculated value.
- the total flow rate of the main pipe and the drain pipe is set as the maximum flow rate necessary for the wafer cleaning apparatus, and the flow rate of the two flow paths of the main pipe and the drain pipe is set to the drain pipe. Since it is adjusted by the opening of the flow rate adjustment valve, by varying the flow rate of the drain pipe according to the variation in the amount used at the point of use, the liquid for semiconductor manufacturing can be constantly supplied without concentration fluctuations. As a result, the solute concentration of the semiconductor manufacturing liquid can be precisely adjusted to a desired value for the surface of a wafer embedded with, for example, a material exhibiting corrosiveness or deliquescence, and the flow rate used in the wafer cleaning apparatus can be varied. It is possible to provide a liquid supply apparatus for semiconductor manufacturing that can stably supply the liquid for semiconductor manufacturing even if the
- FIG. 1 is a flow chart showing a semiconductor manufacturing liquid supply apparatus according to an embodiment of the present invention
- FIG. FIG. 4 is a flow diagram showing an example of a chemical liquid injection means of the semiconductor manufacturing liquid supply apparatus of the same embodiment.
- FIG. 7 is a flowchart showing another example of the chemical liquid injection means of the semiconductor manufacturing liquid supply apparatus of the same embodiment.
- FIG. 10 is a flow chart showing a one-time semiconductor manufacturing liquid supply apparatus of Comparative Example 1; 4 is a graph showing changes in the required amount of water at the point of use and the conductivity of the semiconductor manufacturing liquid in Example 1.
- FIG. 5 is a graph showing changes in the amount of water required at the point of use and the conductivity of the semiconductor manufacturing liquid in Comparative Example 1.
- FIG. 1 shows a semiconductor manufacturing liquid supply apparatus according to an embodiment of the present invention.
- a semiconductor manufacturing liquid supply apparatus 1 includes a supply pipe 2 communicating with a supply source of ultrapure water W as a solvent, and a conductivity adjusting agent supply as a preparation unit provided in the middle of the supply pipe 2. It has a mechanism 3 and an oxidation-reduction potential adjusting agent supply mechanism 4, a membrane degassing device 5 as degassing means having a vacuum pump 5A, and a fine particle removal filter 6 such as an ultrafiltration membrane.
- the supply pipe 2 is branched into a main pipe 7 and a drain pipe 8 by connecting a drain pipe 8 after the particulate removal filter 6 .
- a first instantaneous flowmeter 10 is provided in the main pipe 7, and further communicates with a single-wafer type wafer cleaning device 9 as a point of use.
- This single-wafer type wafer cleaning apparatus 9 has a plurality of cleaning machine chambers 9A, 9B, 9C, . . .
- the drain pipe 8 is provided with a second instantaneous flow meter 11, and attached to the second instantaneous flow meter 11, a flow rate adjusting valve 12 is provided as a flow rate adjusting mechanism.
- the flow control valve 12 it is preferable to use an air-driven valve, an electromagnetic valve, or the like, which is easy to control and has a short response.
- a sensor section 13 as a concentration control section is provided between the membrane degassing device 5 and the particulate removal filter 6 .
- the sensor unit 13 may be appropriately selected from those capable of suitably detecting the concentration of the conductivity adjusting agent and the oxidation-reduction potential adjusting agent, and may be composed of one or more such as a conductivity meter and an ORP meter. good.
- a sensor such as a concentration measuring device using a flow meter and a UV absorbance method may be used for chemicals such as ozone that are difficult to detect with a conductivity meter.
- a TOC meter or the like may be provided as required.
- Reference numeral 14 denotes a flow control valve as a flow control mechanism for controlling the flow rate of the supply pipe 2.
- the first instantaneous flow meter 10, the second instantaneous flow meter 11 and the sensor unit 13 are capable of transmitting measured values to a control means 15 such as a PLC (programmable logic controller), and the control means 15 Based on these transmission results, the conductivity adjusting agent supply mechanism 3, the oxidation-reduction potential adjusting agent supply mechanism 4, the flow rate adjustment valve 12, and the flow rate adjustment valve 14 can be controlled.
- a control means 15 such as a PLC (programmable logic controller)
- the preparing section has a conductivity adjusting agent supply mechanism 3 and an oxidation-reduction potential adjusting agent supply mechanism 4 provided in the middle of the supply pipe 2 .
- the conductivity adjusting agent supply mechanism 3 and the oxidation-reduction potential adjusting agent supply mechanism 4 are, as shown in FIG.
- a tank 4A for an oxidation-reduction potential adjusting agent and a plunger pump 4B for adding a chemical solution are provided.
- the conductivity adjuster supply mechanism 3 may also function as a pH adjuster supply mechanism. Alternatively, only one of the conductivity adjusting agent supply mechanism 3 and the oxidation-reduction potential adjusting agent supply mechanism 4 may be used.
- the ultrapure water W to be raw water is, for example, resistivity: 18.1 M ⁇ cm or more, fine particles: 1000 particles / L or less with a particle size of 50 nm or more, viable bacteria: 1 particle / L or less, TOC (Total Organic Carbon): 1 ⁇ g/L or less Total silicon: 0.1 ⁇ g/L or less Metals: 1 ng/L or less Ions: 10 ng/L or less Hydrogen peroxide: 30 ⁇ g/L or less Water temperature: 25 ⁇ 2° C. is preferred.
- the conductivity adjuster is not particularly limited, but when adjusting the pH to less than 7, an acidic solution such as hydrochloric acid, nitric acid, sulfuric acid, or acetic acid can be used. Moreover, when adjusting to pH 7 or more, alkaline solutions, such as ammonia, sodium hydroxide, potassium hydroxide, or TMAH, can be used. In some cases, a gas body such as CO 2 may be used.
- an acidic solution such as hydrochloric acid, nitric acid, sulfuric acid, or acetic acid
- alkaline solutions such as ammonia, sodium hydroxide, potassium hydroxide, or TMAH
- a gas body such as CO 2 may be used.
- oxidation-reduction potential adjusting agent hydrogen peroxide solution or the like can be used in the case of adjusting the oxidation-reduction potential to be high. Further, when adjusting the oxidation-reduction potential to be low, a solution of oxalic acid, hydrogen sulfide, potassium iodide, or the like can be used. In some cases, gas bodies such as ozone (O 3 ) and hydrogen (H 2 ) may be used.
- Ultrapure water W is supplied from a supply source of ultrapure water (DIW) W, and a conductivity modifier and a redox potential modifier are supplied from a conductivity modifier supply mechanism 3 and a redox potential modifier supply mechanism 4, respectively. supply.
- the flow rate of the ultrapure water W is set to the maximum amount when all the cleaning chambers 9A, 9B, 9C, . . . 15 is controlled by the flow control valve 14 .
- the controller 15 controls the conductivity adjuster supply mechanism 3 and the oxidation-reduction potential adjuster supply mechanism so that the conductivity adjuster and the oxidation-reduction potential adjuster have predetermined concentrations. 4 is controlled to adjust the addition amounts of the conductivity modifier and the oxidation-reduction potential modifier. Either one of the conductivity modifier and the oxidation-reduction potential modifier may be added.
- the chemical solution thus prepared is sent to the membrane degassing device 5, and the dissolved gas component is removed, thereby preparing the semiconductor manufacturing liquid W1.
- the semiconductor manufacturing liquid W1 is effectively an alkaline solution for semiconductor materials using, for example, copper, cobalt, La 2 O 3 and MgO. It is desirable to effectively suppress dissolution of the material. Further, when the semiconductor material contains copper or cobalt, passivation occurs by adjusting the pH of the semiconductor manufacturing liquid W1 in the range of 9 to 11 and the redox potential in the range of 0.1 to 1.7 V. , further dissolution suppression can be expected. However, it is not limited to this oxidation-reduction potential because the dissolution inhibitory effect is observed even under alkaline conditions alone.
- ammonia is desirable in terms of preventing contamination during rinsing, but other alkaline solutions such as TMAH and sodium hydroxide can be used without causing any problem in inhibiting dissolution and permeation.
- TMAH TMAH
- sodium hydroxide sodium hydroxide
- the semiconductor material contains tungsten or molybdenum
- it is effective to use an acidic solution as the semiconductor manufacturing liquid W1 and it is particularly desirable to have a pH of 2 to 5 from the viewpoint of reducing the consumption of the chemical solution.
- Further dissolution suppression can be expected by lowering the concentration of the oxidizing agent and dissolved oxygen. Dilution of hydrochloric acid or dissolution of carbon dioxide is widely known as the adjustment of the acidic solution, and these are desirable from the viewpoint of contamination suppression.
- the semiconductor manufacturing liquid W ⁇ b>1 prepared in this manner measures conductivity, oxidation-reduction potential (ORP), etc. by the sensor section 13 as a concentration control section, and transmits the measured values to the control means 15 .
- the control means 15 adjusts the addition amount of the conductivity modifier by controlling the plunger pump 3B of the conductivity modifier supply mechanism 3 as necessary based on the conductivity value.
- the addition amount of the oxidation-reduction potential control agent is adjusted by controlling the plunger pump 4B of the oxidation-reduction potential control agent supply mechanism 4 as necessary.
- the electrical conductivity and oxidation-reduction potential of the semiconductor manufacturing liquid W1 can always be adjusted to desired values. Moreover, even when the electrical conductivity and the oxidation-reduction potential of the semiconductor manufacturing liquid W1 are varied, the liquid W1 can be rapidly prepared in the same manner.
- concentration control process it is desirable to control the concentration of each solution to an error of ⁇ 5 or less by, for example, providing an in-line monitor for control that displays the measured value of the sensor unit 13 in the control means 15.
- concentration fluctuations are likely to occur when the amount of use of the single-wafer cleaning apparatus 9 fluctuates, the second instantaneous flow meter 11 and the flow rate adjustment valve 12 installed in the drain pipe 8 and the second flow rate adjustment valve 12 installed in the main pipe 7
- concentration fluctuations are suppressed to a minimum range.
- the semiconductor manufacturing liquid W1 for stable cleaning can be sent to the single-wafer cleaning apparatus 9. As shown in FIG.
- Step of supplying semiconductor manufacturing liquid W1 Subsequently, the semiconductor manufacturing liquid W1 passes through the fine particle removal filter 6 and is then supplied from the main pipe 7 to the single-wafer cleaning apparatus 9 .
- the flow rate of the main pipe 7 is the sum of the usage amounts of the working chambers 9A, 9B, 9C, .
- the flow rate of the main pipe 7 is measured and the measured value is transmitted to the control means 15 .
- the flow rate of the ultrapure water W supplied to the supply pipe 2 is the maximum amount when all of the plurality of cleaning chambers 9A, 9B, 9C, . . .
- the control means 15 quickly adjusts the opening degree of the flow control valve 12 so that the difference between the maximum amount and the usage amount becomes the flow rate of the drain pipe 8 to drain It is discharged as drain water D from the pipe 8 .
- the flow rate of the supply pipe 2 that is, the prepared amount of the semiconductor manufacturing liquid W1 can always be kept constant, so that the number of operating cleaning chambers fluctuates, and the amount of the semiconductor manufacturing liquid W1 used fluctuates.
- the semiconductor manufacturing liquid W1 can be supplied with a minimum concentration fluctuation within a predetermined concentration range.
- the drain water D may be discharged as it is, or may be returned to the supply source of the ultrapure water W after removing the conductivity adjusting agent and the oxidation-reduction potential adjusting agent by various treatments.
- the semiconductor manufacturing liquid supply apparatus of the present invention has been described based on the above-described embodiments, but the present invention is not limited to the above-described embodiments and various modifications can be made.
- the conductivity adjuster supply mechanism 3 and the oxidation-reduction potential adjuster supply mechanism 4 of the preparation unit are not limited to those shown in FIG.
- the agent tank 4A is a closed tank, and an N2 gas supply source 16 as an inert gas supply source is connected to the tanks 3A and 4A.
- N 2 gas as an inert gas may be supplied by a flow control mechanism, and the conductivity modifier and the oxidation-reduction potential modifier may be pressure-fed and added so as to obtain a desired solute concentration.
- the present invention is applicable not only to ultrapure water W but also to organic solvents such as IPA as the solvent.
- the configuration of the sensor section 13 may be changed as appropriate depending on whether the solute is conductive or non-conductive.
- a conductivity meter and an absorption photometer may be provided in the case of a conductive solute
- a TOC meter and an absorption photometer may be provided in the case of a non-conductive solute.
- a gas-dissolving film may be provided to dissolve a desired gas component in the semiconductor manufacturing liquid W1.
- a buffer pipe or a reservoir may be provided in the middle of the supply pipe 2, or a solution heater or the like may be provided. Further, as a point of use, it is applicable not only to the single-wafer cleaning apparatus 9, but also to apparatuses using various semiconductor manufacturing liquids.
- Example 1 In the semiconductor manufacturing liquid supply apparatus 1 shown in FIG. 1, the main pipe 7 was connected to the single-wafer type wafer cleaning apparatus 9 to clean the cobalt-laminated wafer. At this time, ammonia water was supplied from the conductivity adjusting agent supply mechanism 3 and diluted to 10 ppm, and the ammonia water was used as the cleaning solution (semiconductor manufacturing liquid W1). The oxidation-reduction potential adjusting agent supply mechanism 4 was set so as not to supply anything. The cleaning solution was targeted to have a conductivity of 25 ⁇ S/cm ⁇ 10%. This single-wafer cleaning apparatus 9 has five processing chambers, each of which requires a cleaning solution of 2 L/min. The amount of cleaning solution sent to the device 9 was changed.
- the flow rate of the supply pipe 2 was set to 10 L/min, which is the maximum flow rate required by the wafer cleaning apparatus.
- the electrical conductivity of the cleaning solution was measured according to the variation in the required amount of the cleaning solution to the single-wafer cleaning apparatus 9 . The results are shown in FIG.
- FIG. 4 A transient-type semiconductor manufacturing liquid supply apparatus shown in FIG. 4 was prepared.
- the same components as those in FIG. 1 described above are denoted by the same reference numerals, and detailed description thereof will be omitted.
- the liquid supply apparatus 1A for semiconductor manufacturing shown in FIG. A flow control valve 14 is provided. Then, a controller (not shown) follows the required flow rate of the single-wafer cleaning apparatus 9 and adjusts the flow rate by adjusting the opening degree of the flow rate adjustment valve 14 of the supply pipe 2 each time.
- the amount of ammonia water supplied from the supply mechanism 3 was adjusted, and the ammonia water diluted to 10 ppm was supplied to the single-wafer wafer cleaning apparatus 9 by setting it so as to prepare a cleaning solution (semiconductor manufacturing liquid W1).
- Comparative Example 1 which is a transient type liquid supply apparatus for manufacturing semiconductors
- Comparative Example 1 an attempt was made to adjust the concentration as the flow rate fluctuated, but the response could not keep up, resulting in a large fluctuation in the concentration. . Therefore, even if the supply pipe 2 is provided with a buffer pipe 21 for alleviating concentration fluctuations in the transient type, it is not possible to follow the fluctuations in the flow rate, and the cleaning solution having a predetermined conductivity is supplied for short-time fluctuations. It turns out to be difficult to do.
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Abstract
Description
することができる。
図1は、本発明の一実施形態による半導体製造用液体供給装置を示している。図1において、半導体製造用液体供給装置1は、溶媒としての超純水Wの供給源に連通した供給管2と、この供給管2の途中に設けられた調製部としての導電率調整剤供給機構3及び酸化還元電位調整剤供給機構4と、真空ポンプ5Aを備えた脱ガス手段としての膜式脱気装置5と、限外ろ過膜などの微粒子除去フィルタ6とを有する。供給管2には、微粒子除去フィルタ6の後段でドレン配管8が接続されることにより、主配管7とドレン配管8とに分岐している。主配管7には第一の瞬時流量計10が設けられていて、さらにユースポイントとしての枚葉式ウェハ洗浄装置9に連通している。この枚葉式ウェハ洗浄装置9は複数の洗浄機チャンバ9A,9B,9C・・・を有する。また、ドレン配管8には第二の瞬時流量計11が設けられていて、この第二の瞬時流量計11に付設して流量調整機構としての流量調整バルブ12が設けられている。この流量調整バルブ12としては、エア駆動式、電磁式などの制御が容易でレスポンスが短いものを用いるのが好ましい。
調製部は、供給管2の途中に設けられた導電率調整剤供給機構3と、酸化還元電位調整剤供給機構4とを有する。そして、これら導電率調整剤供給機構3及び酸化還元電位調整剤供給機構4は、本実施形態においては、図2に示すように導電率調整剤のタンク3A及び薬液を添加するプランジャポンプ3Bと、酸化還元電位調整剤のタンク4A及び薬液を添加するプランジャポンプ4Bとからそれぞれ構成され、これらプランジャポンプ3B,4Bを制御手段15により制御することでそれぞれの薬液注入量を調整可能となっている。なお、導電率調整剤供給機構3は、pH調整剤供給機構として作用させてもよい。また、導電率調整剤供給機構3及び酸化還元電位調整剤供給機構4は、いずれか一方のみとしてもよい。
本実施形態において、原水となる超純水Wとは、例えば、抵抗率:18.1MΩ・cm以上、微粒子:粒径50nm以上で1000個/L以下、生菌:1個/L以下、TOC(Total Organic Carbon):1μg/L以下、全シリコン:0.1μg/L以下、金属類:1ng/L以下、イオン類:10ng/L以下、過酸化水素;30μg/L以下、水温:25±2℃のものが好適である。
本実施形態において、導電率調整剤としては特に制限はないが、pH7未満に調整する場合には、塩酸、硝酸、硫酸、酢酸などの酸性溶液を用いることができる。また、pH7以上に調整する場合には、アンモニア、水酸化ナトリウム、水酸化カリウム又はTMAH等のアルカリ性溶液を用いることができる。また、場合によってはCO2などのガス体を用いてもよい。
次に上述したような半導体製造用液体供給装置を用いた半導体製造用液体の供給方法について、以下説明する。
超純水(DIW)Wの供給源から超純水Wを供給するとともに、導電率調整剤供給機構3と酸化還元電位調整剤供給機構4とから、それぞれ導電率調整剤と酸化還元電位調整剤を供給する。このとき、超純水Wの流量は、ユースポイントとしての枚葉式ウェハ洗浄装置9の洗浄機チャンバ9A,9B,9C・・・の全台が稼働した際の最大量となるように制御手段15により流量調整バルブ14により制御する。そして、この超純水Wの流量に基づいて、導電率調整剤と酸化還元電位調整剤が所定の濃度となるように制御装置15により導電率調整剤供給機構3と酸化還元電位調整剤供給機構4を制御して、導電率調整剤及び酸化還元電位調整剤の添加量を調整する。なお、導電率調整剤及び酸化還元電位調整剤はいずれか一方のみを加えてもよい。このようにして調製された薬液は、膜式脱気装置5に送られ、溶存ガス成分を除去することで、半導体製造用液体W1として調製される。
このようにして調製された半導体製造用液体W1は、濃度制御部としてのセンサ部13で導電率・酸化還元電位(ORP)などを計測し、この計測値を制御手段15に送信する。制御手段15は、導電率の値に基づき、必要に応じて導電率調整剤供給機構3のプランジャポンプ3Bを制御することにより導電率調整剤の添加量を調整する。一方、酸化還元電位の値に基づき、必要に応じて酸化還元電位調整剤供給機構4のプランジャポンプ4Bを制御することにより酸化還元電位調整剤の添加量を調整する。このようにして半導体製造用液体W1の導電率及び酸化還元電位を常に所望の値に調整することができる。また、半導体製造用液体W1の導電率及び酸化還元電位を変動させる場合にも同様にして迅速に調製することができる。
続いて半導体製造用液体W1は、微粒子除去フィルタ6を通過した後、主配管7から枚葉式ウェハ洗浄装置9に供給される。このとき主配管7の流量は、浄機チャンバ9A,9B,9C・・・のうち稼働しているものの使用量の合計となるので、各洗浄機チャンバの稼働台数により変動する。そして、本実施形態においては、主配管7には第一の瞬時流量計10が設けられているので、主配管7の流量を測定し、この計測値を制御手段15に送信する。供給管2に供給される超純水Wの流量は、ユースポイントとしての枚葉式ウェハ洗浄装置9の複数の洗浄機チャンバ9A,9B,9C・・・の全台が稼働した際の最大量となるように設定されているので、制御手段15は、この最大量と使用量との差量が、ドレン配管8の流量となるように流量調整バルブ12の開度を迅速に調節してドレン配管8からドレン水Dとして排出する。これにより、供給管2の流量、すなわち半導体製造用液体W1の調製量を常に一定に保つことができるので、各洗浄機チャンバの稼働台数が変動して、半導体製造用液体W1の使用量が変動しても、所定の濃度範囲内の最小限の濃度変動で半導体製造用液体W1を供給することができる。なお、ドレン水Dは、そのまま排水としてもよいが、各種処理により導電率調整剤及び酸化還元電位調整剤を除去した後、超純水Wの供給源に還流してもよい。
図1に示す半導体製造用液体供給装置1において、主配管7を枚葉式ウェハ洗浄装置9に接続し、コバルトを積層したウェハの洗浄を行った。このとき導電率調整剤供給機構3からアンモニア水を供給して10ppmまで希釈されたアンモニア水を洗浄溶液(半導体製造用液体W1)とした。なお、酸化還元電位調整剤供給機構4は何も供給しないように設定した。この洗浄溶液は導電率が25μS/cm±10%に収まることを目標とした。この枚葉式ウェハ洗浄装置9は5つの処理用チャンバを有し、各チャンバは2L/分の洗浄溶液を必要とし、各チャンバの稼働・停止を模擬的に制御して、枚葉式ウェハ洗浄装置9への洗浄溶液送液量を変更した。この際、供給管2の流量はウェハ洗浄装置が要求する最大流量である10L/分に設定した。このような処理において、枚葉式ウェハ洗浄装置9への洗浄溶液の要求量の変動に応じた洗浄溶液の導電率を測定した。結果を図5に示す。
図4に示す一過式の半導体製造用液体供給装置を準備した。図4の半導体製造用液体供給装置1Aにおいては、前述した図1と同じ構成要素については同一の符号を付し、その詳細な説明を省略する。図4に示す半導体製造用液体供給装置1Aは、ドレン配管8を有しない代わりに、膜式脱気装置5の後段にバッファ管21が設けられており、供給管2には、瞬時流量計14Aが付設された流量調整バルブ14が設けられている。そして、図示しない制御装置により、枚葉式ウェハ洗浄装置9の要求流量に追従して、その都度供給管2の流量調整バルブ14の開度を調整して流量を調整するとともに、導電率調整剤供給機構3からのアンモニア水の供給量を調整して10ppmに希釈されたアンモニア水を洗浄溶液(半導体製造用液体W1)を調製するように設定して枚葉式ウェハ洗浄装置9に供給した。
2 供給管
3 導電率調整剤供給機構(調製部)
3A タンク
3B プランジャポンプ
4 酸化還元電位調整剤供給機構(調製部)
4A タンク
4B プランジャポンプ
5 膜式脱気装置
5A 真空ポンプ
6 微粒子除去フィルタ
7 主配管
8 ドレン配管
9 枚葉式ウェハ洗浄装置
9A,9B,9C・・・ 洗浄機チャンバ
10 第一の瞬時流量計
11 第二の瞬時流量計
12 流量調整バルブ(流量調整機構)
13 センサ部(濃度制御部)
14 流量調整バルブ
15 制御手段
16 N2ガス供給源(不活性ガス供給源)
17 供給管
W 超純水
W1 半導体製造用液体
D ドレン水
Claims (7)
- 溶媒を供給する供給管と、
前記溶媒に対して所定量の薬液を添加することで所定の濃度の半導体製造用液体を調製する調製部と、
前記半導体製造用液体が所定の薬液濃度となるように前記調製部を管理する濃度制御部と、を備え、
前記供給管は、前記濃度制御部の後段で該供給管に接続されたドレン配管と、このドレン配管の接続部からユースポイントに連通する主配管とに分岐していて、
前記主配管には流量計測手段が設けられているとともに前記ドレン配管には前記流量計測手段の計測値に対応可能な流量調整機構が設けられている、半導体製造用液体供給装置。 - 前記主配管およびドレン配管の流量の合計をほぼユースポイントの最大使用量に設定し、前記ドレン配管の流量を前記流量調整機構により変動させることで前記主配管の流量を制御可能となっている、請求項1に記載の半導体製造用液体供給装置。
- 前記流量調整機構が、バルブであり、該バルブの開度を調整することで流量を調整する、請求項1又は2に記載の半導体製造用液体供給装置。
- 前記流量調整機構が、流量調整バルブあるいは定圧弁である、請求項1又は2に記載の半導体製造用液体供給装置。
- 前記薬液の注入手段として、ポンプあるいは薬液を充填した密閉タンクを不活性ガスで加圧して薬液を押し出す輸送手段を用いる、請求項1~4のいずれか1項に記載の半導体製造用液体供給装置。
- 前記薬液が導電性の溶質であり、前記濃度制御部は、導電率計あるいは吸光光度計を有し、この導電率計あるいは吸光光度計の測定値に基づき前記薬液の添加量を制御可能となっている、請求項1~5のいずれか1項に記載の半導体製造用液体供給装置。
する制御手段 - 前記薬液が非導電性の溶質であり、前記濃度制御部は、TOC計あるいは吸光光度計を有し、このTOC計あるいは吸光光度計の測定値に基づき前記薬液の添加量を制御可能となっている、請求項1~5のいずれか1項に記載の半導体製造用液体供給装置。
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- 2022-03-17 WO PCT/JP2022/012177 patent/WO2023037618A1/ja active Application Filing
- 2022-03-17 KR KR1020247002071A patent/KR20240060785A/ko unknown
- 2022-03-17 EP EP22866952.9A patent/EP4401114A1/en active Pending
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Patent Citations (5)
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JP2003334433A (ja) | 2002-05-16 | 2003-11-25 | Kurita Water Ind Ltd | 連続溶解装置、連続溶解方法及び気体溶解水供給装置 |
JP4786955B2 (ja) | 2005-07-21 | 2011-10-05 | 日本碍子株式会社 | 機能水生成装置及びそれを用いた機能水生成方法 |
WO2017122771A1 (ja) * | 2016-01-15 | 2017-07-20 | 株式会社荏原製作所 | 供給液体製造装置および供給液体製造方法 |
JP2018206876A (ja) | 2017-05-31 | 2018-12-27 | 東京エレクトロン株式会社 | 基板液処理装置、処理液供給方法及び記憶媒体 |
JP2019155221A (ja) * | 2018-03-07 | 2019-09-19 | 株式会社荏原製作所 | 循環式ガス溶解液供給装置および循環式ガス溶解液供給方法 |
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Publication number | Publication date |
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CN117916860A (zh) | 2024-04-19 |
JP7099603B1 (ja) | 2022-07-12 |
EP4401114A1 (en) | 2024-07-17 |
TW202311177A (zh) | 2023-03-16 |
JP2023038642A (ja) | 2023-03-17 |
KR20240060785A (ko) | 2024-05-08 |
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