WO2023019668A1 - Submicron waveguide coupling structure - Google Patents

Submicron waveguide coupling structure Download PDF

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Publication number
WO2023019668A1
WO2023019668A1 PCT/CN2021/118785 CN2021118785W WO2023019668A1 WO 2023019668 A1 WO2023019668 A1 WO 2023019668A1 CN 2021118785 W CN2021118785 W CN 2021118785W WO 2023019668 A1 WO2023019668 A1 WO 2023019668A1
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silicon
chip
waveguide
laser
face
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PCT/CN2021/118785
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French (fr)
Chinese (zh)
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李量
沈笑寒
甘飞
陈奔
朱宇
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亨通洛克利科技有限公司
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Publication of WO2023019668A1 publication Critical patent/WO2023019668A1/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G02B6/4236—Fixing or mounting methods of the aligned elements
    • G02B6/4245—Mounting of the opto-electronic elements

Definitions

  • the invention relates to the technical field of optical device packaging, in particular to a submicron waveguide coupling structure.
  • Silicon photonics technology in the optical communication industry has developed rapidly in recent years due to its advantages of high integration, scale, and low cost. But the biggest problem is that the silicon material itself cannot emit light, so it faces the problem of how to place the light source in the silicon-based chip.
  • the most efficient and feasible implementation solution is the hybrid integration technology of III-V devices and silicon photonic chips, that is, firstly prepare a complete laser, and then eutectically bond the pads of the laser with the pads of the silicon photonic chip Welded together, and realize the optical alignment of the light emitting end face of the laser and the waveguide of the silicon optical chip.
  • the current solutions for hybrid integration of lasers and silicon photonic chips mainly include: evanescent wave coupling, grating coupling, and end-face coupling, etc., but there are problems such as low coupling efficiency and complicated bonding process.
  • the evanescent wave coupling scheme works on the principle that when the boundary condition of the waveguide does not satisfy the bound state condition of the light field, the light field will scatter on the surface of the waveguide and enter the adjacent waveguide.
  • the advantage is that the tolerance of the coupling process is large, and the wavelength range of the coupling is large; the disadvantage is that the manufacturing process of the evanescent waveguide structure is relatively difficult, and the current process is immature.
  • the working principle of the grating coupling scheme is based on the grating diffraction effect.
  • the advantage is that the coupling process tolerance is large; the disadvantage is that the coupling wavelength range is small, generally only about 40nm, which cannot meet the CWDM wavelength application.
  • the working principle of the traditional end-face coupling scheme is based on optical field transmission mode matching.
  • the advantage is that the laser chip and silicon photonic chip can be independently prepared, the process is mature, the yield is high, and the coupling wavelength range is large, covering O-band to C-band. ;
  • the disadvantage is that the coupling accuracy is very high.
  • the light-emitting end face of the laser is processed by scribing, grinding and polishing, so the processing accuracy of the end face of the laser is not high, resulting in additional coupling loss.
  • the present invention aims to provide a submicron waveguide coupling structure to overcome the deficiencies in the prior art.
  • a submicron-scale waveguide coupling structure which includes: a silicon optical chip, a laser chip, and a silicon waveguide;
  • the laser chip is flip-chip mounted in the mounting groove on one side of the silicon photonics chip;
  • the laser chip includes a laser, and the laser includes: an indium phosphide substrate and a multiple quantum well structure formed in the indium phosphide substrate;
  • the upper surface of the indium phosphide substrate has a groove, and the mounting groove of the silicon photonics chip is correspondingly provided with a positioning column that matches the groove;
  • the end face of the indium phosphide substrate forms a light-emitting end face and a dicing end face, the light-emitting end face is formed by etching, and forms a stepped structure with the scribing end face;
  • the silicon waveguide is located on one side of the silicon optical chip, and its end face is coupled with the light emitting end face of the laser chip.
  • a silicon nitride film is also deposited on the bottom of the installation groove.
  • a pad is also provided in the installation groove, and gold-tin solder is sputtered on the pad, and the silicon optical chip is connected to the metal pad on the upper surface of the silicon photonic chip. eutectic soldering of the pad in the mounting groove.
  • the positioning posts are arranged in front and rear rows, and any row is provided with two positioning posts arranged at intervals.
  • the light-emitting end face of the laser and the end face coupled with the silicon waveguide are all inclined planes, and the inclination angle of the inclined planes is 5-15°.
  • silicon nitride films are deposited on the light-emitting end face of the laser and the end face coupled with the silicon wave guide.
  • the coupling model of the laser and the silicon waveguide is established through the 3D finite time domain difference algorithm, and the film thickness of the silicon nitride film on the light-emitting end face of the laser and the coupling end face of the silicon waveguide is set as scanning Parameters, the corresponding relationship between coupling efficiency and film thickness is calculated by scanning parameters, and the optimal value of silicon nitride film thickness is determined according to the corresponding relationship.
  • one side of the silicon waveguide is provided with a first alignment mark on the silicon optical chip, and the lower surface of the indium phosphide substrate is provided with a second alignment mark. bit flag.
  • the laser chip includes four indium phosphide lasers arranged side by side, and the positioning posts in the mounting groove of the silicon photonic chip are arranged in an array of two rows and eight columns.
  • the beneficial effect of the present invention is: the present invention provides a direct coupling structure between an array laser and a silicon waveguide based on flip-chip bonding, which can realize high-efficiency coupling of a silicon optical chip and a laser chip.
  • the design and precise flip-chip of silicon photonics chips and laser chips can solve the problem of hybrid integration of light sources and silicon-based chips. The process is simple and suitable for mass production.
  • FIG. 1 is a schematic plan view of an embodiment of a submicron waveguide coupling structure of the present invention
  • FIG. 2 is a top view of a silicon photonics chip in an embodiment of the submicron waveguide coupling structure of the present invention
  • Figure 3 is an enlarged schematic view of the laser chip in Figure 1;
  • 4 to 7 are schematic diagrams of simulation analysis results of coupling insertion loss and return loss.
  • an embodiment of the present invention provides a submicron waveguide coupling structure, which includes: a silicon photonics chip 10 , a laser chip 20 and a silicon waveguide 30 .
  • an installation groove 11 is formed on one side of the silicon photonics chip 10 through an etching process, and the laser chip 20 is flip-chip mounted in the installation groove 11 .
  • the installation groove 11 is a rectangular groove with a length of about 1200um, a width of about 600um, and a depth of about 10um.
  • a layer of silicon nitride film 12 is also deposited on the bottom of the mounting groove 11 .
  • the silicon nitride film 12 is formed on the bottom of the mounting groove 11 by a plasma enhanced chemical vapor deposition (PECVD) process.
  • PECVD plasma enhanced chemical vapor deposition
  • the thickness of the silicon nitride film can be precisely controlled and optimized through the above process, and the silicon nitride film 12 makes the coupling efficiency of the silicon optical chip 10 and the laser chip 20 the highest.
  • a bonding pad 13 is also provided at the bottom of the mounting groove 11 .
  • the pads 13 are formed at corresponding positions at the bottom of the mounting groove 11 through metal deposition and dry etching processes.
  • the pad 13 is a TiW/Au pad.
  • gold-tin solder 130 with a thickness of about 2 ⁇ m is also sputtered on the pad 13 .
  • the gold-tin solder 130 can be an alloy solder, or can be stacked with a single attribute metal. By presetting the gold-tin solder 130 , it is beneficial to realize the eutectic welding of the electrodes between the silicon photonics chip 10 and the laser chip 20 .
  • the laser chip 20 is flip-chip mounted in the mounting groove 11 on one side of the silicon photonics chip 10 , and includes a laser 21 .
  • the number of the laser 21 can be one or more.
  • the laser chip 20 is designed as a 1 ⁇ n array, that is, there are n lasers on one laser bar. Its advantage is that the coupling of n lasers can be completed in one flip-chip welding.
  • the laser 21 includes: an indium phosphide substrate 211 and a multiple quantum well structure 212 formed in the indium phosphide substrate 211 .
  • the indium phosphide substrate 211 has an upper surface and a lower surface. Since the laser chip 20 is flip-chip mounted in the mounting groove 11 of the silicon photonics chip 10 , the upper surface of the indium phosphide substrate 211 is opposite to the silicon photonics chip 10 .
  • the upper surface of the indium phosphide substrate 211 has a groove 2110 , and the mounting groove 11 of the silicon photonics chip 10 is correspondingly provided with a positioning post 14 matching the groove 2110 . Therefore, during the flip-chip bonding process of the laser 21 , the upper surface of the positioning post 14 is in physical contact with the groove 2110 on the upper surface of the laser 21 to complete the positioning in the height direction.
  • the positioning columns 14 are arranged in front and rear rows, and any row is provided with two positioning columns 14 arranged at intervals. In this way, the relative horizontal relationship between the laser chip 20 and the silicon photonics chip 10 can be ensured by relying on the front and rear positioning posts 14 .
  • the positioning posts 14 in the mounting groove 11 of the silicon photonics chip 10 are arranged in an array of two rows and eight columns.
  • the four pads 13 near the lower side are positive electrode pads, which correspond to the positive electrodes of the four-channel array laser 21; the four pads 13 near the upper side are negative electrode pads , which corresponds to the cathode of the four-channel array laser 21, and the above four cathode pads are coplanar pads.
  • the end face of the indium phosphide substrate 211 forms the light-emitting end face 2111 and the scribing end face 2112, and the light-emitting end face 2111 is formed by etching, so that the laser 21 has the characteristics of precise end face etching position and low end face roughness, which is conducive to improving coupling efficiency.
  • the light emitting end surface 2111 and the dicing end surface 2112 form a stepped structure.
  • the height difference between the light emitting end surface 2111 and the scribing end surface 2112 is about 30-50 um, so as to protect the light emitting end surface 2111 of the laser 21 from being damaged during scribing.
  • the silicon waveguide 30 is located on one side of the silicon photonics chip 10 , and its end face is coupled with the light emitting end face 2111 of the laser chip 20 to receive the outgoing light from the laser chip 20 .
  • the light-emitting end face 2111 and the end face coupled with the silicon waveguide 30 are sloped, and the slope angle of the slope is 5-15°.
  • the inclination angle of the slope is 10°.
  • the silicon nitride thin film 2113 is deposited on the light emitting end face 2111 and the end face coupled with the silicon waveguide 30 , so that the transmission efficiency of the coupling between the laser 21 and the end face of the silicon waveguide 30 can be increased.
  • the above-mentioned silicon nitride film is deposited and formed by plasma enhanced chemical vapor deposition (PECVD), so as to accurately control and optimize the thickness of the silicon nitride film, so that the coupling efficiency between the laser 21 and the silicon waveguide 30 is the highest.
  • PECVD plasma enhanced chemical vapor deposition
  • silicon nitride film 2113 For the above silicon nitride film 2113, establish a coupling model between the laser 21 and the silicon waveguide 30 through a 3D finite time domain difference algorithm, and set the film thickness of the silicon nitride film 2113 on the light output end surface 2111 and the coupling end surface of the silicon waveguide 30 as scanning parameters , the corresponding relationship between coupling efficiency and film thickness is calculated by scanning parameters, and the optimal value of silicon nitride film thickness is determined according to the corresponding relationship.
  • the simulated value is about 0.2 ⁇ m. That is, when the coupling efficiency is the highest, the corresponding thickness of the silicon nitride film is the optimal value.
  • the gap will be filled with a refractive index matching glue 22 whose refractive index is about 1.5 near the wavelength of 1310 nm, so that the coupling efficiency can be further improved.
  • the alignment relationship of the laser chip 20 relative to the silicon photonics chip 10 on the horizontal plane, the two orthogonal translation directions and the rotation angle can be controlled. Furthermore, high-precision passive coupling between the light-emitting end surface 2111 of the laser 21 and the light-incoming end surface of the silicon waveguide 30 can be realized.
  • one side of the silicon waveguide 30 is provided with a first alignment mark 15 on the silicon photonics chip 10 , and the lower surface of the indium phosphide substrate 211 is provided with a second alignment mark. Therefore, the high-precision chip mounter can use the CCD to identify the alignment mark, thereby realizing high-precision flip-chip welding of the laser chip 20 .
  • the first alignment mark 15 is F-shaped.
  • the coupling insertion loss and return loss between the laser end face and the silicon waveguide end face are modeled and calculated using the 3D finite difference time domain (FDTD) algorithm.
  • FDTD 3D finite difference time domain
  • the wavelength is 1310nm
  • the excitation The mode is TE0 light field.
  • the present invention provides a direct coupling structure between an array laser and a silicon waveguide based on flip-chip bonding, which can realize high-efficiency coupling of a silicon photonic chip and a laser chip.
  • Precise flip-chip can solve the problem of hybrid integration of light sources and silicon-based chips, the process is simple, and it is suitable for mass production.

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  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

A submicron waveguide coupling structure, comprising: a silicon optical chip (10), a laser chip (20), and a silicon waveguide (30). The laser chip (20) is arranged upside down in a mounting slot (11) on one surface of the silicon optical chip (10); the laser chip (20) comprises a laser (21), the laser (21) comprising: an indium phosphide substrate (211) and a multi-quantum well structure (212) formed in the indium phosphide substrate (211); a recess (2110) is formed on the upper surface of the indium phosphide substrate (211), and positioning columns (14) matching the recess (2110) are correspondingly provided in the mounting slot (11) of the silicon optical chip (10); a light exit end surface (2111) and a scribing end surface (2112) are formed on an end surface of the indium phosphide substrate (211), the light exit end surface (2111) is formed by means of etching, and a stepped structure is formed by the light exit end surface (2111) and the scribing end surface (2112); the silicon waveguide (30) is located on one surface of the silicon optical chip (10), and has one end surface coupled to the light exit end surface (2111) of the laser chip (20). According to the submicron waveguide coupling structure, high-efficiency coupling between the silicon optical chip (10) and the laser chip (20) can be realized, and the problem of hybrid integration of a light source and a silicon-based chip can be solved by means of the design of the silicon optical chip (10) and the laser chip (20) and precision upside-down arrangement, the process is simple, and the present invention is suited to mass production.

Description

亚微米级波导耦合结构Submicron Waveguide Coupling Structure 技术领域technical field
本发明涉及光器件封装技术领域，尤其涉及一种亚微米级波导耦合结构。The invention relates to the technical field of optical device packaging, in particular to a submicron waveguide coupling structure.
背景技术Background technique
光通信行业硅光技术因其高集成度、规模化、低成本等优势，近年来发展快速。但是最大的难题是硅材料本身不能发光，因此面临如何将光源放置于硅基芯片中的问题。Silicon photonics technology in the optical communication industry has developed rapidly in recent years due to its advantages of high integration, scale, and low cost. But the biggest problem is that the silicon material itself cannot emit light, so it faces the problem of how to place the light source in the silicon-based chip.
目前，最高效可行的实现方案是III-V族器件与硅光芯片的混合集成技术，即首先制备完整的激光器，然后通过绑定的方式将激光器的焊盘与硅光芯片的焊盘共晶焊接到一起，并实现激光器出光端面与硅光芯片波导的光学对准。At present, the most efficient and feasible implementation solution is the hybrid integration technology of III-V devices and silicon photonic chips, that is, firstly prepare a complete laser, and then eutectically bond the pads of the laser with the pads of the silicon photonic chip Welded together, and realize the optical alignment of the light emitting end face of the laser and the waveguide of the silicon optical chip.
具体而言，目前实现激光器与硅光芯片混合集成方案主要有：倏逝波耦合、光栅耦合、端面耦合等实现方式，但是都存在耦合效率低、绑定工艺复杂等问题。Specifically, the current solutions for hybrid integration of lasers and silicon photonic chips mainly include: evanescent wave coupling, grating coupling, and end-face coupling, etc., but there are problems such as low coupling efficiency and complicated bonding process.
其中，倏逝波耦合方案，其工作原理是当波导边界条件不满足光场的束缚态条件时，光场会在波导表面的散射，并进入相邻的波导。优点是耦合工艺容差较大，耦合的波长范围较大；缺点是倏逝波波导结构制作工艺难度较大，目前工艺不成熟。Among them, the evanescent wave coupling scheme works on the principle that when the boundary condition of the waveguide does not satisfy the bound state condition of the light field, the light field will scatter on the surface of the waveguide and enter the adjacent waveguide. The advantage is that the tolerance of the coupling process is large, and the wavelength range of the coupling is large; the disadvantage is that the manufacturing process of the evanescent waveguide structure is relatively difficult, and the current process is immature.
光栅耦合方案，其工作原理是基于光栅衍射效应，优点是耦合工艺容差较大；缺点是耦合的波长范围较小，一般仅为40nm左右，无法满足CWDM波长应用。The working principle of the grating coupling scheme is based on the grating diffraction effect. The advantage is that the coupling process tolerance is large; the disadvantage is that the coupling wavelength range is small, generally only about 40nm, which cannot meet the CWDM wavelength application.
传统端面耦合方案，其工作原理是基于光场传输模式匹配，优点是激光 器芯片和硅光芯片可独立制备，工艺成熟、良率较高，耦合的波长范围较大，可覆盖O波段至C波段；缺点是耦合精度要求很高。此外，激光器出光端面是采用划片磨抛的方式来加工，所以激光器端面加工精度不高，造成额外的耦合损耗。The working principle of the traditional end-face coupling scheme is based on optical field transmission mode matching. The advantage is that the laser chip and silicon photonic chip can be independently prepared, the process is mature, the yield is high, and the coupling wavelength range is large, covering O-band to C-band. ; The disadvantage is that the coupling accuracy is very high. In addition, the light-emitting end face of the laser is processed by scribing, grinding and polishing, so the processing accuracy of the end face of the laser is not high, resulting in additional coupling loss.
因此，针对上述问题，有必要提出进一步地解决方案。Therefore, in view of the above problems, it is necessary to propose a further solution.
发明内容Contents of the invention
本发明旨在提供一种亚微米级波导耦合结构，以克服现有技术中存在的不足。The present invention aims to provide a submicron waveguide coupling structure to overcome the deficiencies in the prior art.
为解决上述技术问题，本发明的技术方案是：In order to solve the problems of the technologies described above, the technical solution of the present invention is:
一种亚微米级波导耦合结构，其包括：硅光芯片、激光器芯片以及硅波导；A submicron-scale waveguide coupling structure, which includes: a silicon optical chip, a laser chip, and a silicon waveguide;
所述激光器芯片倒装于所述硅光芯片一面的安装槽中；The laser chip is flip-chip mounted in the mounting groove on one side of the silicon photonics chip;
所述激光器芯片包括激光器，所述激光器包括：磷化铟衬底以及形成于所述磷化铟衬底中的多量子阱结构；The laser chip includes a laser, and the laser includes: an indium phosphide substrate and a multiple quantum well structure formed in the indium phosphide substrate;
所述磷化铟衬底的上表面具有凹槽，所述硅光芯片的安装槽中对应设置有与所述凹槽相配合的定位柱；The upper surface of the indium phosphide substrate has a groove, and the mounting groove of the silicon photonics chip is correspondingly provided with a positioning column that matches the groove;
所述磷化铟衬底的端面形成出光端面和划片端面，所述出光端面通过刻蚀方式形成，并与所述划片端面形成台阶结构；The end face of the indium phosphide substrate forms a light-emitting end face and a dicing end face, the light-emitting end face is formed by etching, and forms a stepped structure with the scribing end face;
所述硅波导位于所述硅光芯片一面上，其端面与所述激光器芯片的出光端面相耦合。The silicon waveguide is located on one side of the silicon optical chip, and its end face is coupled with the light emitting end face of the laser chip.
作为本发明亚微米级波导耦合结构的改进，所述安装槽的底部还沉积有一层氮化硅薄膜。As an improvement of the submicron waveguide coupling structure of the present invention, a silicon nitride film is also deposited on the bottom of the installation groove.
作为本发明亚微米级波导耦合结构的改进，所述安装槽中还设置有焊盘，所述焊盘上溅射有金锡焊料，所述硅光芯片通过其上表面的金属焊盘与所述安装槽中焊盘共晶焊接。As an improvement of the submicron-scale waveguide coupling structure of the present invention, a pad is also provided in the installation groove, and gold-tin solder is sputtered on the pad, and the silicon optical chip is connected to the metal pad on the upper surface of the silicon photonic chip. eutectic soldering of the pad in the mounting groove.
作为本发明亚微米级波导耦合结构的改进，所述定位柱分前后行设置，任一行设置有间隔设置的两个定位柱。As an improvement of the sub-micron waveguide coupling structure of the present invention, the positioning posts are arranged in front and rear rows, and any row is provided with two positioning posts arranged at intervals.
作为本发明亚微米级波导耦合结构的改进，所述激光器的出光端面及硅波导与其相耦合的端面均为斜面，所述斜面的倾斜角度为5-15°。As an improvement of the submicron-scale waveguide coupling structure of the present invention, the light-emitting end face of the laser and the end face coupled with the silicon waveguide are all inclined planes, and the inclination angle of the inclined planes is 5-15°.
作为本发明亚微米级波导耦合结构的改进，所述激光器的出光端面及硅波导与其相耦合的端面均沉积有氮化硅薄膜。As an improvement of the submicron waveguide coupling structure of the present invention, silicon nitride films are deposited on the light-emitting end face of the laser and the end face coupled with the silicon wave guide.
作为本发明亚微米级波导耦合结构的改进，通过3D有限时域差分算法建立激光器与硅波导的耦合模型，将激光器的出光端面、硅波导的耦合端面上氮化硅薄膜的膜厚设置为扫描参数，通过扫描参数计算耦合效率与膜厚对应关系，根据所述对应关系确定氮化硅薄膜厚度的最优值。As an improvement of the submicron-scale waveguide coupling structure of the present invention, the coupling model of the laser and the silicon waveguide is established through the 3D finite time domain difference algorithm, and the film thickness of the silicon nitride film on the light-emitting end face of the laser and the coupling end face of the silicon waveguide is set as scanning Parameters, the corresponding relationship between coupling efficiency and film thickness is calculated by scanning parameters, and the optimal value of silicon nitride film thickness is determined according to the corresponding relationship.
作为本发明亚微米级波导耦合结构的改进，所述硅波导的一侧设置有位于所述硅光芯片上的第一对位标记，所述磷化铟衬底的下表面设置有第二对位标记。As an improvement to the submicron-scale waveguide coupling structure of the present invention, one side of the silicon waveguide is provided with a first alignment mark on the silicon optical chip, and the lower surface of the indium phosphide substrate is provided with a second alignment mark. bit flag.
作为本发明亚微米级波导耦合结构的改进，所述激光器芯片包括四个并排设置的磷化铟激光器，所述硅光芯片的安装槽内的定位柱按照两行八列的阵列进行排布。As an improvement of the submicron waveguide coupling structure of the present invention, the laser chip includes four indium phosphide lasers arranged side by side, and the positioning posts in the mounting groove of the silicon photonic chip are arranged in an array of two rows and eight columns.
与现有技术相比，本发明的有益效果是：本发明提供一种基于倒装键合的阵列激光器与硅波导直接耦合结构，其能够实现硅光芯片、激光器芯片的高效率耦合，通过对硅光芯片、激光器芯片的设计以及精确倒装，能够解决 光源与硅基芯片的混合集成问题，工艺简单，适合应用于大批量生产中。Compared with the prior art, the beneficial effect of the present invention is: the present invention provides a direct coupling structure between an array laser and a silicon waveguide based on flip-chip bonding, which can realize high-efficiency coupling of a silicon optical chip and a laser chip. The design and precise flip-chip of silicon photonics chips and laser chips can solve the problem of hybrid integration of light sources and silicon-based chips. The process is simple and suitable for mass production.
附图说明Description of drawings
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明中记载的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only These are some embodiments described in the present invention. Those skilled in the art can also obtain other drawings based on these drawings without creative work.
图1为本发明亚微米级波导耦合结构一实施例的平面示意图；1 is a schematic plan view of an embodiment of a submicron waveguide coupling structure of the present invention;
图2为本发明亚微米级波导耦合结构一实施例中硅光芯片的俯视图；2 is a top view of a silicon photonics chip in an embodiment of the submicron waveguide coupling structure of the present invention;
图3为图1中激光器芯片的放大示意图；Figure 3 is an enlarged schematic view of the laser chip in Figure 1;
图4至图7为耦合插损及回损的仿真分析结果示意图。4 to 7 are schematic diagrams of simulation analysis results of coupling insertion loss and return loss.
具体实施方式Detailed ways
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
如图1所示，本发明一实施例提供一种亚微米级波导耦合结构，其包括：硅光芯片10、激光器芯片20以及硅波导30。As shown in FIG. 1 , an embodiment of the present invention provides a submicron waveguide coupling structure, which includes: a silicon photonics chip 10 , a laser chip 20 and a silicon waveguide 30 .
如图2所示，硅光芯片10的一面通过刻蚀工艺形成有安装槽11，激光器芯片20倒装于该安装槽11中。一个实施方式中，该安装槽11为一长方形的槽，长度约为1200um，宽度约为600um，深度约10um。As shown in FIG. 2 , an installation groove 11 is formed on one side of the silicon photonics chip 10 through an etching process, and the laser chip 20 is flip-chip mounted in the installation groove 11 . In one embodiment, the installation groove 11 is a rectangular groove with a length of about 1200um, a width of about 600um, and a depth of about 10um.
安装槽11的底部还沉积有一层氮化硅薄膜12。该氮化硅薄膜12通过等离子体增强化学气相沉积(PECVD)工艺形成于安装槽11的底部。如此，通 过上述工艺可精确控制并优化氮化硅膜厚，且氮化硅薄膜12使得硅光芯片10与激光器芯片20的耦合效率最高。A layer of silicon nitride film 12 is also deposited on the bottom of the mounting groove 11 . The silicon nitride film 12 is formed on the bottom of the mounting groove 11 by a plasma enhanced chemical vapor deposition (PECVD) process. In this way, the thickness of the silicon nitride film can be precisely controlled and optimized through the above process, and the silicon nitride film 12 makes the coupling efficiency of the silicon optical chip 10 and the laser chip 20 the highest.
为了与倒装的激光器芯片20进行共晶焊接，安装槽11的底部还设置有焊盘13。该焊盘13通过金属沉积以及干法刻蚀工艺，形成于安装槽11底部的相应位置。一个实施方式中，上述焊盘13为TiW/Au焊盘。进一步地，焊盘13上还溅射有2μm左右厚度的金锡焊料130。该金锡焊料130可以是合金焊料，也可以单属性金属叠镀。通过预置金锡焊料130，有利于实现硅光芯片10、激光器芯片20之间电极的共晶焊接。In order to perform eutectic bonding with the flip-chip laser chip 20 , a bonding pad 13 is also provided at the bottom of the mounting groove 11 . The pads 13 are formed at corresponding positions at the bottom of the mounting groove 11 through metal deposition and dry etching processes. In one embodiment, the pad 13 is a TiW/Au pad. Further, gold-tin solder 130 with a thickness of about 2 μm is also sputtered on the pad 13 . The gold-tin solder 130 can be an alloy solder, or can be stacked with a single attribute metal. By presetting the gold-tin solder 130 , it is beneficial to realize the eutectic welding of the electrodes between the silicon photonics chip 10 and the laser chip 20 .
如图3所示，激光器芯片20倒装于硅光芯片10一面的安装槽11中，其包括激光器21。As shown in FIG. 3 , the laser chip 20 is flip-chip mounted in the mounting groove 11 on one side of the silicon photonics chip 10 , and includes a laser 21 .
该激光器21的数量可以为一个，也可以为多个。当激光器21为多个时，该激光器芯片20为1×n阵列设计，即一个激光器bar条上有n台激光器。其优势在于，一次倒装焊接即可完成n台激光器的耦合。The number of the laser 21 can be one or more. When there are multiple lasers 21, the laser chip 20 is designed as a 1×n array, that is, there are n lasers on one laser bar. Its advantage is that the coupling of n lasers can be completed in one flip-chip welding.
激光器21包括：磷化铟衬底211以及形成于磷化铟衬底211中的多量子阱结构212。磷化铟衬底211具有上表面和下表面，由于激光器芯片20倒装于硅光芯片10的安装槽11中，因此该磷化铟衬底211的上表面与硅光芯片10相对设置。The laser 21 includes: an indium phosphide substrate 211 and a multiple quantum well structure 212 formed in the indium phosphide substrate 211 . The indium phosphide substrate 211 has an upper surface and a lower surface. Since the laser chip 20 is flip-chip mounted in the mounting groove 11 of the silicon photonics chip 10 , the upper surface of the indium phosphide substrate 211 is opposite to the silicon photonics chip 10 .
磷化铟衬底211的上表面具有凹槽2110，硅光芯片10的安装槽11中对应设置有与凹槽2110相配合的定位柱14。从而，在激光器21倒装贴片过程中，定位柱14上表面通过与激光器21上表面的凹槽2110的物理接触来完成高度方向的定位。The upper surface of the indium phosphide substrate 211 has a groove 2110 , and the mounting groove 11 of the silicon photonics chip 10 is correspondingly provided with a positioning post 14 matching the groove 2110 . Therefore, during the flip-chip bonding process of the laser 21 , the upper surface of the positioning post 14 is in physical contact with the groove 2110 on the upper surface of the laser 21 to complete the positioning in the height direction.
其中，定位柱14分前后行设置，任一行设置有间隔设置的两个定位柱14。 如此，依靠前后行的定位柱14可确保激光器芯片20与硅光芯片10的相对水平关系。Wherein, the positioning columns 14 are arranged in front and rear rows, and any row is provided with two positioning columns 14 arranged at intervals. In this way, the relative horizontal relationship between the laser chip 20 and the silicon photonics chip 10 can be ensured by relying on the front and rear positioning posts 14 .
此外，当激光器芯片20包括四个并排设置的磷化铟激光器时，硅光芯片10的安装槽11内的定位柱14按照两行八列的阵列进行排布。此时，硅光芯片10的安装槽11中，靠近下侧的四个焊盘13为正极焊盘，其对应四通道阵列激光器21的正极；靠近上侧的四个焊盘13为负极焊盘，其对应四通道阵列激光器21的负极，且上述四个负极焊盘为共面焊盘。In addition, when the laser chip 20 includes four indium phosphide lasers arranged side by side, the positioning posts 14 in the mounting groove 11 of the silicon photonics chip 10 are arranged in an array of two rows and eight columns. At this time, in the mounting groove 11 of the silicon photonics chip 10, the four pads 13 near the lower side are positive electrode pads, which correspond to the positive electrodes of the four-channel array laser 21; the four pads 13 near the upper side are negative electrode pads , which corresponds to the cathode of the four-channel array laser 21, and the above four cathode pads are coplanar pads.
磷化铟衬底211的端面形成出光端面2111和划片端面2112，出光端面2111通过刻蚀方式形成，如此使得，激光器21具有端面刻蚀位置精准及端面粗糙度低等特点，有利于提高耦合效率。同时，出光端面2111与划片端面2112形成台阶结构。一个实施方式中，出光端面2111与划片端面2112之间的高度差约为30～50um，从而保护激光器21出光端面2111在划片时不受损坏。The end face of the indium phosphide substrate 211 forms the light-emitting end face 2111 and the scribing end face 2112, and the light-emitting end face 2111 is formed by etching, so that the laser 21 has the characteristics of precise end face etching position and low end face roughness, which is conducive to improving coupling efficiency. At the same time, the light emitting end surface 2111 and the dicing end surface 2112 form a stepped structure. In one embodiment, the height difference between the light emitting end surface 2111 and the scribing end surface 2112 is about 30-50 um, so as to protect the light emitting end surface 2111 of the laser 21 from being damaged during scribing.
硅波导30位于硅光芯片10一面上，其端面与激光器芯片20的出光端面2111相耦合，以接收来自激光器芯片20的出射光。为了降低端面耦合时造成的反射，出光端面2111及硅波导30与其相耦合的端面均为斜面，斜面的倾斜角度为5-15°。优选地，斜面的倾斜角度为10°。The silicon waveguide 30 is located on one side of the silicon photonics chip 10 , and its end face is coupled with the light emitting end face 2111 of the laser chip 20 to receive the outgoing light from the laser chip 20 . In order to reduce the reflection caused by end-face coupling, the light-emitting end face 2111 and the end face coupled with the silicon waveguide 30 are sloped, and the slope angle of the slope is 5-15°. Preferably, the inclination angle of the slope is 10°.
出光端面2111及硅波导30与其相耦合的端面均沉积有氮化硅薄膜2113，如此可以增加激光器21与硅波导30端面耦合的透射效率。一个实施方式中，利用等离子体增强化学气相沉积(PECVD)工艺沉积形成上述氮化硅薄膜，以精确控制并优化氮化硅膜厚，使得激光器21与硅波导30的耦合效率最高。The silicon nitride thin film 2113 is deposited on the light emitting end face 2111 and the end face coupled with the silicon waveguide 30 , so that the transmission efficiency of the coupling between the laser 21 and the end face of the silicon waveguide 30 can be increased. In one embodiment, the above-mentioned silicon nitride film is deposited and formed by plasma enhanced chemical vapor deposition (PECVD), so as to accurately control and optimize the thickness of the silicon nitride film, so that the coupling efficiency between the laser 21 and the silicon waveguide 30 is the highest.
针对上述氮化硅薄膜2113，通过3D有限时域差分算法建立激光器21与硅波导30的耦合模型，将出光端面2111、硅波导30的耦合端面上氮化硅薄 膜2113的膜厚设置为扫描参数，通过扫描参数计算耦合效率与膜厚对应关系，根据对应关系确定氮化硅薄膜厚度的最优值，仿真值约为0.2μm。即耦合效率最高时，对应的氮化硅薄膜厚度为最优值。For the above silicon nitride film 2113, establish a coupling model between the laser 21 and the silicon waveguide 30 through a 3D finite time domain difference algorithm, and set the film thickness of the silicon nitride film 2113 on the light output end surface 2111 and the coupling end surface of the silicon waveguide 30 as scanning parameters , the corresponding relationship between coupling efficiency and film thickness is calculated by scanning parameters, and the optimal value of silicon nitride film thickness is determined according to the corresponding relationship. The simulated value is about 0.2 μm. That is, when the coupling efficiency is the highest, the corresponding thickness of the silicon nitride film is the optimal value.
同时，在实际贴片过程中，激光器21与硅波导30端面之间会存在缝隙，该缝隙一般为0～1μm。因此，在缝隙中会填充折射率匹配胶水22，其折射率在1310nm波长附近约为1.5，如此可进一步提高耦合效率。At the same time, in the actual placement process, there will be a gap between the laser 21 and the end surface of the silicon waveguide 30, and the gap is generally 0-1 μm. Therefore, the gap will be filled with a refractive index matching glue 22 whose refractive index is about 1.5 near the wavelength of 1310 nm, so that the coupling efficiency can be further improved.
同时，借助高精度倒装焊设备(精度要求±0.3～0.5um@3sigma)，可控制激光器芯片20相对于硅光芯片10在水平面上，两个正交平移方向及旋转角度的对准关系，进而可以实现激光器21出光端面2111与硅波导30进光端面的高精度无源耦合。此外，硅波导30的一侧设置有位于硅光芯片10上的第一对位标记15，磷化铟衬底211的下表面设置有第二对位标记。从而，高精度贴片机可使用CCD识别对准标记，进而实现激光器芯片20的高精度倒装焊接。一个实施方式中，第一对位标记15为F形。At the same time, with the help of high-precision flip-chip bonding equipment (accuracy requirements ±0.3-0.5um@3sigma), the alignment relationship of the laser chip 20 relative to the silicon photonics chip 10 on the horizontal plane, the two orthogonal translation directions and the rotation angle can be controlled. Furthermore, high-precision passive coupling between the light-emitting end surface 2111 of the laser 21 and the light-incoming end surface of the silicon waveguide 30 can be realized. In addition, one side of the silicon waveguide 30 is provided with a first alignment mark 15 on the silicon photonics chip 10 , and the lower surface of the indium phosphide substrate 211 is provided with a second alignment mark. Therefore, the high-precision chip mounter can use the CCD to identify the alignment mark, thereby realizing high-precision flip-chip welding of the laser chip 20 . In one embodiment, the first alignment mark 15 is F-shaped.
为了对本实施例亚微米级波导耦合结构的耦合效果进行验证，利用3D有限时域差分(FDTD)算法建模计算激光器端面与硅波导端面的耦合插损及回损，此时波长为1310nm，激发模式为TE0光场。In order to verify the coupling effect of the submicron-scale waveguide coupling structure in this embodiment, the coupling insertion loss and return loss between the laser end face and the silicon waveguide end face are modeled and calculated using the 3D finite difference time domain (FDTD) algorithm. At this time, the wavelength is 1310nm, and the excitation The mode is TE0 light field.
通过参数扫描的方法计算在不同水平贴片容差(垂直光轴方向)、竖直贴片容差以及端面缝隙容差下的耦合效率。该结构可以实现脊波导和硅基波导的完美对耦。The coupling efficiency under different horizontal patch tolerances (vertical optical axis direction), vertical patch tolerances and end-face gap tolerances was calculated by the method of parameter scanning. This structure can realize the perfect coupling between the ridge waveguide and the silicon-based waveguide.
如图4、5、6、7所示，由仿真分析结果可知，可以实现1.55dB的超低耦合损耗。考虑到在XYZ三个维度的容差，假设贴片机在水平方向上的贴片容差为±0.5um，高度定位Pillar在竖直方向上的贴片容差为±0.1um，端面缝 隙为0～2um，在大批量生产中可以实现2.5～3dB的耦合损耗。此外，该端面耦合结构设计可使激光器与硅光芯片的耦合回损小于-35dB，因而大大降低反射光对于激光器本身工作性能的影响。As shown in Figures 4, 5, 6, and 7, it can be seen from the simulation analysis results that an ultra-low coupling loss of 1.55dB can be achieved. Considering the tolerances in the three dimensions of XYZ, it is assumed that the placement tolerance of the placement machine in the horizontal direction is ±0.5um, the placement tolerance of the height positioning Pillar in the vertical direction is ±0.1um, and the end face gap is 0~2um, coupling loss of 2.5~3dB can be achieved in mass production. In addition, the design of the end-face coupling structure can make the coupling return loss between the laser and the silicon photonics chip less than -35dB, thus greatly reducing the influence of reflected light on the working performance of the laser itself.
综上所述，本发明提供一种基于倒装键合的阵列激光器与硅波导直接耦合结构，其能够实现硅光芯片、激光器芯片的高效率耦合，通过对硅光芯片、激光器芯片的设计以及精确倒装，能够解决光源与硅基芯片的混合集成问题，工艺简单，适合应用于大批量生产中。In summary, the present invention provides a direct coupling structure between an array laser and a silicon waveguide based on flip-chip bonding, which can realize high-efficiency coupling of a silicon photonic chip and a laser chip. Precise flip-chip can solve the problem of hybrid integration of light sources and silicon-based chips, the process is simple, and it is suitable for mass production.
对于本领域技术人员而言，显然本发明不限于上述示范性实施例的细节，而且在不背离本发明的精神或基本特征的情况下，能够以其他的具体形式实现本发明。因此，无论从哪一点来看，均应将实施例看作是示范性的，而且是非限制性的，本发明的范围由所附权利要求而不是上述说明限定，因此旨在将落在权利要求的等同要件的含义和范围内的所有变化囊括在本发明内。不应将权利要求中的任何附图标记视为限制所涉及的权利要求。It will be apparent to those skilled in the art that the invention is not limited to the details of the above-described exemplary embodiments, but that the invention can be embodied in other specific forms without departing from the spirit or essential characteristics of the invention. Accordingly, the embodiments should be regarded in all points of view as exemplary and not restrictive, the scope of the invention being defined by the appended claims rather than the foregoing description, and it is therefore intended that the scope of the invention be defined by the appended claims rather than by the foregoing description. All changes within the meaning and range of equivalents of the elements are embraced in the present invention. Any reference sign in a claim should not be construed as limiting the claim concerned.
此外，应当理解，虽然本说明书按照实施方式加以描述，但并非每个实施方式仅包含一个独立的技术方案，说明书的这种叙述方式仅仅是为清楚起见，本领域技术人员应当将说明书作为一个整体，各实施例中的技术方案也可以经适当组合，形成本领域技术人员可以理解的其他实施方式。In addition, it should be understood that although this specification is described according to implementation modes, not each implementation mode only contains an independent technical solution, and this description in the specification is only for clarity, and those skilled in the art should take the specification as a whole , the technical solutions in the various embodiments can also be properly combined to form other implementations that can be understood by those skilled in the art.

Claims (9)

  1. 一种亚微米级波导耦合结构，其特征在于，所述亚微米级波导耦合结构包括：硅光芯片、激光器芯片以及硅波导；A submicron waveguide coupling structure, characterized in that the submicron waveguide coupling structure includes: a silicon optical chip, a laser chip, and a silicon waveguide;
    所述激光器芯片倒装于所述硅光芯片一面的安装槽中；The laser chip is flip-chip mounted in the mounting groove on one side of the silicon photonics chip;
    所述激光器芯片包括激光器，所述激光器包括：磷化铟衬底以及形成于所述磷化铟衬底中的多量子阱结构；The laser chip includes a laser, and the laser includes: an indium phosphide substrate and a multiple quantum well structure formed in the indium phosphide substrate;
    所述磷化铟衬底的上表面具有凹槽，所述硅光芯片的安装槽中对应设置有与所述凹槽相配合的定位柱；The upper surface of the indium phosphide substrate has a groove, and the mounting groove of the silicon photonics chip is correspondingly provided with a positioning column that matches the groove;
    所述磷化铟衬底的端面形成出光端面和划片端面，所述出光端面通过刻蚀方式形成，并与所述划片端面形成台阶结构；The end face of the indium phosphide substrate forms a light-emitting end face and a dicing end face, the light-emitting end face is formed by etching, and forms a stepped structure with the scribing end face;
    所述硅波导位于所述硅光芯片一面上，其端面与所述激光器芯片的出光端面相耦合。The silicon waveguide is located on one side of the silicon optical chip, and its end face is coupled with the light emitting end face of the laser chip.
  2. 根据权利要求1所述的亚微米级波导耦合结构，其特征在于，所述安装槽的底部还沉积有一层氮化硅薄膜。The submicron waveguide coupling structure according to claim 1, characterized in that a silicon nitride film is further deposited on the bottom of the installation groove.
  3. 根据权利要求1所述的亚微米级波导耦合结构，其特征在于，所述安装槽中还设置有焊盘，所述焊盘上溅射有金锡焊料，所述硅光芯片通过其上表面的金属焊盘与所述安装槽中焊盘共晶焊接。The submicron-scale waveguide coupling structure according to claim 1, wherein a pad is also arranged in the mounting groove, gold-tin solder is sputtered on the pad, and the silicon photonic chip passes through its upper surface The metal pad is eutectically welded with the pad in the mounting groove.
  4. 根据权利要求1所述的亚微米级波导耦合结构，其特征在于，所述定位柱分前后行设置，任一行设置有间隔设置的两个定位柱。The submicron-scale waveguide coupling structure according to claim 1, wherein the positioning posts are arranged in front and rear rows, and any row is provided with two positioning posts arranged at intervals.
  5. 根据权利要求1所述的亚微米级波导耦合结构，其特征在于，所述出光端面及硅波导与其相耦合的端面均为斜面，所述斜面的倾斜角度为5-15°。The submicron-scale waveguide coupling structure according to claim 1, characterized in that, the light-emitting end face and the end face coupled with the silicon waveguide are all inclined planes, and the inclination angle of the inclined planes is 5-15°.
  6. 根据权利要求5所述的亚微米级波导耦合结构，其特征在于，所述出光端面及硅波导与其相耦合的端面均沉积有氮化硅薄膜。The submicron-scale waveguide coupling structure according to claim 5, characterized in that silicon nitride films are deposited on the light-emitting end face and the end face coupled with the silicon waveguide.
  7. 根据权利要求6所述的亚微米级波导耦合结构，其特征在于，通过3D有限时域差分算法建立激光器与硅波导的耦合模型，将出光端面、硅波导的耦合端面上氮化硅薄膜的膜厚设置为扫描参数，通过扫描参数计算耦合效率与膜厚对应关系，根据所述对应关系确定氮化硅薄膜厚度的最优值。The submicron-scale waveguide coupling structure according to claim 6, characterized in that, the coupling model of the laser and the silicon waveguide is established through a 3D finite time domain difference algorithm, and the silicon nitride thin film film on the light-emitting end surface and the coupling end surface of the silicon waveguide The thickness is set as a scanning parameter, and the corresponding relationship between the coupling efficiency and the film thickness is calculated through the scanning parameter, and the optimal value of the silicon nitride film thickness is determined according to the corresponding relationship.
  8. 根据权利要求1所述的亚微米级波导耦合结构，其特征在于，所述硅波导的一侧设置有位于所述硅光芯片上的第一对位标记，所述磷化铟衬底的下表面设置有第二对位标记。The submicron-scale waveguide coupling structure according to claim 1, characterized in that, one side of the silicon waveguide is provided with a first alignment mark on the silicon optical chip, and the lower part of the indium phosphide substrate is The surface is provided with a second alignment mark.
  9. 根据权利要求1所述的亚微米级波导耦合结构，其特征在于，所述激光器芯片包括四个并排设置的磷化铟激光器，所述硅光芯片的安装槽内的定位柱按照两行八列的阵列进行排布。The submicron-scale waveguide coupling structure according to claim 1, wherein the laser chip includes four indium phosphide lasers arranged side by side, and the positioning columns in the mounting groove of the silicon optical chip are arranged in two rows and eight columns arrays are arranged.
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