WO2023010293A1 - 巨量转移方法、led显示器件及显示装置 - Google Patents
巨量转移方法、led显示器件及显示装置 Download PDFInfo
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- WO2023010293A1 WO2023010293A1 PCT/CN2021/110395 CN2021110395W WO2023010293A1 WO 2023010293 A1 WO2023010293 A1 WO 2023010293A1 CN 2021110395 W CN2021110395 W CN 2021110395W WO 2023010293 A1 WO2023010293 A1 WO 2023010293A1
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- Prior art keywords
- growth substrate
- display backplane
- insulating
- led chips
- mass transfer
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68309—Auxiliary support including alignment aids
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
Definitions
- the present application relates to the technical field of mass transfer, in particular to a mass transfer method, an LED display device and a display device.
- Micro Light-emitting Diode (Micro LED) display panels as a new generation of display technology, have the advantages of higher brightness, better luminous efficiency, and lower power consumption, making Micro LEDs widely used.
- a Micro LED display panel generally includes a plurality of pixel areas, and each pixel area includes a red LED chip, a blue LED chip and a green LED chip.
- each pixel area includes a red LED chip, a blue LED chip and a green LED chip.
- the purpose of this application is to provide a mass transfer method, LED display device and display device, aiming to solve the problem that the LED chip cannot be aligned with the pad group on the display backplane, so that the LED chip The welding strength is difficult to guarantee, resulting in abnormal connection between the LED chip and the driving circuit, and even falling off the display backplane.
- the first aspect of the present application provides a mass transfer method, including: applying an insulating glue on a growth substrate so that any two adjacent LED chips have the insulating glue between them; placing the growth substrate on above the display backplane, so that the distance between the growth substrate and the display backplane is greater than the height of the LED chip; the insulating glue is heated to soften the insulating glue, and the softened The insulating adhesive material is extended to be bonded to the display backplane, so as to form an insulating glue column between the growth substrate and the display backplane; the LED chip is separated from the growth substrate, and the separated The LED chip drops onto the corresponding pad group along the channel formed by the insulating glue column around it; and the LED chip is bonded to the corresponding pad group on the display backplane.
- the above mass transfer method can directly transfer LED chips from the growth substrate to the display backplane, greatly simplifying the transfer process; and in the transfer process, only one kind of insulating adhesive material is needed, and less consumables are required. Costs are thus reduced throughout the transfer process.
- the adhesive force of the insulating adhesive is also used to support the growth substrate and the display backplane, which can ensure the accurate alignment of the LED chip and the pad group, so that the welding strength of the LED chip is guaranteed, and the LED chip and the display backplane can be guaranteed.
- the drive circuit is properly connected to prevent the LED chips from falling off the display backplane.
- the insulating adhesive material after providing the insulating adhesive material between any two adjacent LED chips, there is also an interval between the insulating adhesive material and the two adjacent LED chips. There is a gap between the insulating adhesive material and two adjacent LED chips, so that the insulating adhesive column formed subsequently by the insulating adhesive material also has an interval between the two adjacent LED chips, preventing the subsequent LED chips from being peeled off.
- the pillars are bonded to the LED chip to avoid affecting the brightness and consistency of the light emitted by the LED chip.
- applying insulating glue on the growth substrate so that there is said insulating glue between any adjacent two LED chips specifically includes: applying insulating glue on the growth substrate so that any adjacent Between the two LED chips, there is the insulating adhesive with a cross-section that is narrow at both ends and wide at the middle.
- the cross-section refers to the cross-section of the insulating glue along its thickness direction.
- the insulating adhesive material can be made into a shape with narrow ends and a wide middle part, so as to ensure that the insulating adhesive material does not contact the LED chip, has sufficient adhesive force, and has a sufficient reserve.
- applying insulating glue on the growth substrate so that there is said insulating glue between any adjacent two LED chips specifically includes: applying insulating glue on the growth substrate so that any adjacent The insulating glue with a circular or elliptical cross-section is located between the two LED chips.
- the cross-section refers to the cross-section of the insulating glue along its thickness direction.
- forming an insulating glue column between the growth substrate and the display backplane specifically includes: forming a cross-section between the growth substrate and the display backplane with narrow ends and a wide middle.
- the insulating glue column with an elliptical cross-section may be formed between the growth substrate and the display backplane.
- the above-mentioned section refers to a section along the thickness direction of the insulating glue column.
- the narrower end of the insulating glue column bonded to the growth substrate can not only make the insulating glue column adhere to the growth substrate, but also ensure that the insulating glue column does not contact the LED chip.
- the wide middle part of the insulating glue column can make enough amount of the insulating glue column, so that the insulating glue column has sufficient supporting force for the growth substrate and the display backplane, and prevents the relative position of the growth substrate and the display backplane from changing.
- the narrower end of the insulating glue column bonded to the display backplane can not only make the insulating glue column adhere to the display backplane, but also ensure that the insulating glue column does not contact the pad group.
- forming an insulating glue column between the growth substrate and the display backplane specifically includes: forming an insulating glue column with an oval cross-section between the growth substrate and the display backplane. In this way, it is ensured that the insulating glue column does not contact the LED chip and the pad group, has sufficient adhesive force, and has a sufficient amount to support the growth substrate and the display backplane.
- the insulating glue column is formed between the growth substrate and the display backplane, there is a space between the insulating glue column and two adjacent LED chips. In this way, it can prevent the insulating adhesive column from adhering to the LED chip when the subsequent LED chip is peeled off, so as to avoid affecting the brightness and consistency of light emitted by the LED chip.
- applying insulating glue on the growth substrate so that there is said insulating glue between any adjacent two LED chips specifically includes: applying insulating glue on the growth substrate so that any adjacent There is the insulating adhesive material between the two LED chips, and the insulating adhesive material is lower than or flush with the LED chips.
- the insulating glue material can be prevented from being too thick, thereby preventing the insulating glue material from flowing between the LED chip and the pad group when welding the LED chip and the pad group, resulting in poor welding strength; in addition, it can also save raw materials and reduce costs .
- the mass transfer method before applying insulating glue on the growth substrate, further includes: setting first grooves on any two adjacent LED chips on the growth substrate; applying insulating glue on the growth substrate material, so that there is the insulating glue between any two adjacent LED chips, which specifically includes: coating the insulating glue on the growth substrate, so that there is the insulating glue between any two adjacent LED chips , and make at least part of the insulating adhesive material be located in the first groove. Therefore, after the subsequent insulating adhesive material softens, the first groove can guide the flow direction of the insulating adhesive material, preventing the insulating adhesive material from flowing to contact with the LED chip.
- the mass transfer method before softening the insulating adhesive material, further includes: setting a second groove between adjacent pad groups on the display backplane; softening, the softened insulating adhesive material is extended to be bonded to the display backplane, so as to form an insulating adhesive column between the growth substrate and the display backplane, which specifically includes: softening the insulating adhesive material
- the softened insulating adhesive material extends to be bonded to the display backplane, and at least part of the insulating adhesive material bonded to the display backplane extends into the second groove, so as to be bonded to the display backplane.
- An insulating glue column is formed between the growth substrate and the display backplane. Therefore, after the subsequent insulating adhesive material softens, the second groove can guide the flow direction of the insulating adhesive material, preventing the insulating adhesive material from flowing to contact with the pad group.
- disposing the growth substrate above the display backplane, so that the distance between the growth substrate and the display backplane is greater than the height of the LED chip specifically includes: disposing the growth substrate Above the display backplane, the distance between the growth substrate and the display backplane is greater than or equal to 20 microns.
- the insulating adhesive material can be softened and flowed to be well bonded to the display backplane, and the insulating adhesive material can be ensured to have sufficient adhesion to the LED chip, so that the LED chip can be supported in a precise alignment with the pad group.
- the position of the bit, and not too much flow to the display backplane can ensure that the pad group is not affected by the insulating glue.
- the mass transfer method before coating the insulating adhesive on the growth substrate, the mass transfer method further includes: detecting dead LED chips on the growth substrate; separating the LED chip from the growth substrate specifically includes : separating at least part of the LED chips except the bad LED chips from the growth substrate. Therefore, it can be ensured that the LED chips transferred to the display backplane are all LED chips with normal appearance and good wavelength consistency, so that the final prepared display device has better light emission consistency and can improve the quality of the prepared display device.
- the mass transfer method further includes: adding another LED chip to the pad corresponding to the bad LED chip group office. In this way, it is possible to prevent the pad group corresponding to the bad pixel LED chip from being vacant, so that the pixels on the finally prepared display device are relatively complete, thereby improving the display effect.
- the second aspect of the present application provides an LED display device, including a display backplane and a plurality of LED chips, and the plurality of LED chips are transferred to the display by the mass transfer method described in any one of the first aspects of the application. back panel.
- the third aspect of the present application provides a display device, including a driving circuit and the LED display device according to any one of the second aspect of the present application, and the LED display device is electrically connected to the driving circuit.
- the above mass transfer method can directly transfer LED chips from the growth substrate to the display backplane, greatly simplifying the transfer process; and in the transfer process, only one kind of insulating adhesive material is needed, and less consumables are required. Costs are thus reduced throughout the transfer process.
- the adhesive force of the insulating adhesive is also used to support the growth substrate and the display backplane, which can ensure the accurate alignment of the LED chip and the pad group, so that the welding strength of the LED chip is guaranteed, and the LED chip and the display backplane can be guaranteed.
- the drive circuit is properly connected to prevent the LED chips from falling off the display backplane.
- FIG. 1 is a schematic structural view of a growth substrate provided in the prior art.
- Fig. 2 is a structural schematic diagram of another viewing angle of a growth substrate provided by the prior art.
- FIG. 3 is a schematic structural view of a temporary substrate bonded to a growth substrate provided in the prior art.
- Fig. 4 is a schematic structural diagram of the process of transferring LED chips on a growing substrate from a temporary substrate provided in the prior art.
- Fig. 5 is a schematic structural diagram of a temporary substrate with LED chips transferred in the prior art.
- Fig. 6 is a structural schematic diagram of another viewing angle of the temporary substrate transferred with LED chips provided by the prior art.
- Fig. 7 is a schematic structural diagram of transferring LED chips to a display backplane by a transfer substrate provided in the prior art.
- FIG. 8 is a schematic structural view of a display backplane with LED chips transferred in the prior art.
- FIG. 9 is a flowchart of a mass transfer method provided by an embodiment of the present application.
- 10 to 13 are schematic process flow diagrams of a mass transfer method provided by an embodiment of the present application.
- FIG. 14 is a specific flow diagram of the process flow shown in FIG. 13 .
- FIG. 15 is a flowchart of a mass transfer method provided by another embodiment of the present application.
- 16 to 20 are schematic process flow diagrams of a mass transfer method provided by another embodiment of the present application.
- Fig. 21 is a flow chart of a mass transfer method provided by another embodiment of the present application.
- FIG. 22 is a schematic process flow diagram of step S350 shown in FIG. 21 .
- Fig. 23 is a schematic diagram of the characteristics of the insulating adhesive material provided by the embodiment of the present application.
- FIG. 24 is a schematic structural view of setting a first groove on a growth substrate in an embodiment of the present application.
- FIG. 25 is a schematic structural diagram showing a second groove provided on the backplane in an embodiment of the present application.
- FIG. 26 is a schematic structural diagram of an LED display device provided by an embodiment of the present application.
- Figure 1 is a schematic structural view of the growth substrate provided by the embodiment of the present application
- Figure 2 is a schematic structural view of the growth substrate provided by the embodiment of the present application from another perspective
- FIG. 4 is a schematic structural diagram of the process of transferring the LED chip on the growth substrate from the temporary substrate provided in the embodiment of the application
- FIG. 5 is the transfer of the temporary substrate provided in the embodiment of the application.
- FIG. 6 is a schematic diagram of the structure of the temporary substrate provided by the embodiment of the present application with the LED chip transferred from another perspective.
- the LED chip 20 is transferred to the display backplane 50, the red LED chip, the blue LED chip and the green LED chip are transferred respectively.
- the following uses one kind of LED chip 20 as an example for illustration, and the remaining two kinds of LED chips The same reason will not be repeated in this application.
- the LED chip 20 is transferred to the display backplane 50, and the specific process is as follows.
- Step S10 providing a growth substrate 10 (Wafer), on which LED chips 20 are grown. Then, the LED chip 20 is bonded to the temporary substrate 30 by using the adhesive layer on the temporary substrate 30 . Next, the growth substrate 10 on the LED chip 20 is peeled off. Thereby, the LED chips 20 can be transferred onto the temporary substrate 30 .
- a growth substrate 10 Wafer
- the LED chip 20 is bonded to the temporary substrate 30 by using the adhesive layer on the temporary substrate 30 .
- the growth substrate 10 on the LED chip 20 is peeled off. Thereby, the LED chips 20 can be transferred onto the temporary substrate 30 .
- Step S11 Use the adhesive layer on the transfer substrate 40 to selectively bond the LED chip 20 to the transfer substrate 40; refer to FIG. 7, which shows that the transfer substrate 40 is selectively bonded to the LED on the temporary substrate 30. Chip 20.
- Step S12 Transfer the LED chips 20 on the transfer substrate 40 to the display backplane 50 .
- FIG. 8 a schematic diagram showing successful transfer of the LED chips 20 on the backplane 50 is shown in FIG. 8 .
- the process of transferring the LED chip 20 to the display backplane 50 by the transfer substrate 40 is also a process of mass welding. Therefore, after the transfer is completed, the LED chip 20 has completed the gold-indium eutectic bonding.
- the adhesiveness of the adhesive layer on the temporary substrate needs to be smaller than the adhesiveness of the adhesive layer on the transfer substrate, and the transfer process requires more consumables and costs a lot.
- the whole process needs to be from the growth substrate to the temporary substrate, then from the temporary substrate to the transfer substrate, and then from the transfer substrate to the display backplane.
- the alignment of the pad groups on the backplane makes it difficult to ensure the welding strength of the LED chip, resulting in an abnormal connection between the LED chip and the drive circuit, and even falling off the display backplane.
- Figure 9 is a flowchart of a mass transfer method provided by an embodiment of the present application
- Figure 10 to Figure 13 is a schematic process flow diagram of a mass transfer method provided by an embodiment of the present application .
- the mass transfer method includes the following steps:
- S100 apply insulating glue 60 on the growth substrate 10, so that any two adjacent LED chips 20 have the insulating glue 60 between them.
- the insulating adhesive material 60 is non-conductive adhesive film (Non-Conductive Adhesive Film, NCF). The viscosity of NCF changes significantly when the temperature changes.
- the LED chips 20 are generally arranged in an array on the growth substrate 10 , and there is a space between any two adjacent LED chips 20 , and multiple spaces together form a channel.
- the insulating adhesive material 60 cannot fill the entire channel, thereby preventing the LED chip 20 from contacting the insulating adhesive material 60 and preventing subsequent
- the insulating glue column 70 formed by the insulating glue material 60 is bonded to the LED chip 20 , so as to prevent the glue material from affecting the brightness and consistency of the light output of the LED chip 20 .
- applying the insulating adhesive material 60 on the growth substrate 10 may specifically include: applying an insulating adhesive material 60 on the growth substrate 10 whose cross-section along its thickness direction is narrow at both ends and wide at the middle.
- the insulating adhesive material 60 has a first section along its thickness direction, the first section has a first bottom edge 61 in contact with the growth substrate 10 , and has a second bottom edge 61 away from the growth substrate 10 . Side 62.
- the insulating adhesive material 60 gradually increases in width from the first bottom edge 61 to its middle, and gradually increases in width from the second bottom edge 62 to its middle.
- the width of the first cross section of the insulating adhesive material 60 increases gradually from both ends to the middle in its thickness direction. Since the insulating adhesive material 60 is easy to contact the LED chip 20 at the position of the first bottom edge 61 and the second bottom edge 62, the first bottom edge 61 and the second bottom edge 62 are set narrower, thus, both can make The insulating adhesive material 60 is bonded to the growth substrate 10 , and it can also ensure that the insulating adhesive material 60 does not contact the LED chip 20 .
- the width of the rest of the positions between the first bottom edge 61 and the second bottom edge 62 increases gradually, so that there is a sufficient amount of insulating adhesive material 60, so that after the subsequent insulating adhesive material 60 is softened, there is enough amount to flow to bonding. on the display backplane 50 .
- applying the insulating adhesive material 60 on the growth substrate 10 so that there is the insulating adhesive material 60 between any two adjacent LED chips 20 specifically includes: applying the insulating adhesive material 60 on the growth substrate 10
- the insulating adhesive material 60 is such that any two adjacent LED chips 20 have the insulating adhesive material 60 with a circular or oval cross-section.
- the above-mentioned first cross-section may be circular.
- the insulating adhesive material 60 has a certain viscosity, its contact position with the growth substrate 10 will be deformed, that is, the circular first cross-section
- the position where the section contacts the growth substrate 10 is a straight line, not a standard circle.
- the first cross-section is circular, which can make the first cross-section narrow at both ends and wide in the middle, so as to ensure that the insulating adhesive material 60 does not contact the LED chip 20 , has sufficient adhesive force, and has a sufficient reserve.
- the above-mentioned first cross-section is elliptical, and the major axis of the ellipse where the first cross-section is located is parallel to the thickness direction of the insulating adhesive material 60 .
- the position where it is in contact with the growth substrate 10 is also in a straight line, and the first cross-section is oval, which can make the first cross-section narrow at both ends and wide in the middle, so as to ensure that the insulating adhesive material 60 does not contact the LED chip 20 and has enough space. Adhesive strength, and sufficient reserves for subsequent bonding of the display backplane 50.
- the above-mentioned first cross-section may also be an isosceles trapezoid with two lower bases butted, and the upper base of one isosceles trapezoid is in contact with the growth substrate 10.
- This shape may also be The first cross-section is narrow at both ends and wide at the middle, so as to ensure that the insulating adhesive material 60 does not contact the LED chip 20 , has sufficient adhesive force, and has sufficient reserves for subsequent bonding of the display backplane 50 .
- applying the insulating adhesive material 60 on the growth substrate 10 so that there is the insulating adhesive material 60 between any two adjacent LED chips 20 specifically includes: applying the insulating adhesive material on the growth substrate 10 60 , so that there is the insulating adhesive material 60 between any two adjacent LED chips 20 , and the insulating adhesive material 60 is lower than or flush with the LED chip 20 .
- the insulating adhesive material 60 has a first surface away from the growth substrate 10 and a second surface connected to the growth substrate 10 . Wherein, the first surface can be processed to be flush with the surface of the LED chip 20 away from the growth substrate 10; or the first surface can be processed to be lower than the LED chip 20 away from the surface. The surface on which one side of the growth substrate 10 is located.
- the mass transfer method before coating the insulating adhesive material 60 on the growth substrate 10 , the mass transfer method further includes: setting first grooves 11 on any two adjacent LED chips 20 on the growth substrate 10 . Then, smearing the insulating adhesive material 60 on the growth substrate 10 so that there is the insulating adhesive material 60 between any two adjacent LED chips 20 specifically includes: applying the insulating adhesive material 60 on the growth substrate 10 so that any There is the insulating adhesive material 60 between two adjacent LED chips 20 , and at least part of the insulating adhesive material 60 is located in the first groove 11 . Referring to FIG. 24 , that is, a first groove 11 may be provided in the channel, and when the insulating adhesive material 60 is filled in the channel, at least part of it is located in the first groove 11 . Thus, after the subsequent insulating adhesive material 60 softens, the first groove 11 can guide the flow direction of the insulating adhesive material 60 and prevent the insulating adhesive material 60 from flowing to contact with the LED chip 20 .
- the display backplane 50 may specifically be a thin film transistor (Thin Film Transistor, TFT) substrate, a printed circuit board (Printed Circuit Board, PCB), etc., which are not limited in this application. That is, the growth substrate 10 and the display backplane 50 are arranged above the display backplane 50 at a distance from each other. Since the LED chip 20 needs to be soldered to the pad group 51 on the display backplane 50, it is necessary to make multiple The LED chips 20 are in one-to-one correspondence with the plurality of pad groups 51 on the display backplane 50 .
- TFT Thin Film Transistor
- PCB printed circuit board
- the distance between the growth substrate 10 and the display backplane 50 specifically refers to the distance between the surface of the growth substrate 10 facing the display backplane 50 and the surface of the display backplane 50 facing the growth substrate 10 .
- the display backplane 50 is generally provided with a driving circuit etc., and the driving circuit can drive the LED chip 20 to make the LED chip 20 emit light smoothly, thereby ensuring that the relevant display device can be used normally.
- the pad group 51 on the display backplane 50 can be formed by applying solder such as solder paste on the display backplane 50 in dot shapes.
- disposing the growth substrate 10 above the display backplane 50 such that the distance between the growth substrate 10 and the display backplane 50 is greater than the height of the LED chip 20 specifically includes: The growth substrate 10 is disposed above the display backplane 50 such that the distance between the growth substrate 10 and the display backplane 50 is greater than or equal to 20 microns. If the distance between the growth substrate 10 and the display backplane 50 is too close, it may cause too much part of the insulating adhesive material 60 to flow to the display backplane 50 after softening, and thus cover the pad group 51, causing the pad group 51 It cannot be welded well with the LED chip 20 .
- the distance between the growth substrate 10 and the display backplane 50 may cause the insulating glue material 60 to be stretched too long between the display backplane 50 and the growth substrate 10 when flowing onto the display backplane 50, affecting the insulating glue.
- the adhesive force of the insulating adhesive material 60 to the LED chip 20 may cause the inclination of the insulating adhesive material 60 , thereby affecting the alignment accuracy of the LED chip 20 .
- the above distance can not only make the insulating adhesive material 60 flow to be well bonded to the display backplane 50 after softening, but also ensure that the insulating adhesive material 60 has sufficient adhesion to the LED chip 20, so that the LED chip 20 can be supported In a position precisely aligned with the pad group 51 , without excessive flow to the display backplane 50 , it can be ensured that the pad group 51 is not affected by the insulating glue 60 .
- the distance between the growth substrate 10 and the display backplane 50 needs to be less than or equal to 70 microns, thereby preventing the display backplane from The distance between the board 50 and the growth substrate 10 is too far, resulting in weak adhesion of the insulating adhesive material 60 to the display backplane 50 .
- S120 Referring to FIG. 12 , heat the insulating adhesive material 60 to soften the insulating adhesive material 60, and the softened insulating adhesive material 60 extends to be bonded to the display backplane 50, so as to An insulating glue column 70 is formed between the growth substrate 10 and the display backplane 50 .
- laser heating may be used to soften the insulating glue column 70 .
- an insulating glue column 70 can be formed between the growth substrate 10 and the display backplane 50 , and there is a space between the insulating glue column 70 and two adjacent LED chips 20 .
- the insulating adhesive column 70 can be prevented from being bonded to the LED chip 20, so as to prevent the adhesive material from affecting the brightness and consistency of the light emitted by the LED chip.
- the curve L1 is the temperature change curve
- the curve L2 is the viscosity change curve of the insulating adhesive material 60 . It can be seen that when the temperature T rises from 20 degrees Celsius (°C) to about 120°C, the viscosity of the insulating adhesive 60 continues to decrease; when the temperature is between 120°C and 180°C, its viscosity remains basically unchanged; when the temperature is 180°C When the temperature reaches 200°C, the viscosity starts to rise again.
- the temperature during heating can be controlled between 120° C. and 140° C., which is lower than the melting point of the solder used to prepare the pad group 51 and can prevent the solder from melting.
- the fluidity of the insulating adhesive column 70 is better, which can ensure that a part of the insulating adhesive material 60 flows to the display backplane 50 and is bonded to the display backplane 50, while the other part of the insulating adhesive material 60 continues to maintain In the state of bonding the growth substrate 10 , there is still a part between the display backplane 50 and the growth substrate 10 , so that the display backplane 50 and the growth substrate 10 are temporarily connected, thereby maintaining a relatively fixed position.
- the viscosity of the insulating adhesive material 60 will increase as the temperature drops.
- the insulating adhesive material 60 cools down, so that the growth substrate 10 and the display backplane 50 are better bonded, and the growth substrate 10 and the display backplane 50 are better bonded.
- the display backplane 50 can be bonded and supported by the insulating adhesive pillars 70, so that the positions of the growth substrate 10 and the display backplane 50 are relatively fixed, so that the positions of the LED chips 20 and the pad groups 51 can be precisely corresponded to improve the alignment of the LED chips 20. bit precision.
- the mass transfer method further includes: setting a second groove 52 between adjacent pad groups 51 on the display backplane 50 . Then, the insulating adhesive material 60 is softened, and the softened insulating adhesive material 60 is extended to be bonded to the display backplane 50 to form insulation between the growth substrate 10 and the display backplane 50.
- the glue column 70 specifically includes: softening the insulating glue material 60, the softened insulating glue material 60 extends to be bonded to the display backplane 50, and at least part of the glued to the display backplane 50 is The insulating glue material 60 extends into the second groove 52 to form an insulating glue column 70 between the growth substrate 10 and the display backplane 50 .
- a second groove 52 is provided between adjacent pad groups 51 on the display backplane 50, so that the softened part of the insulating glue 60 flows to be bonded to the display backplane. 50 , at least part of the softened insulating glue 60 flows into the second groove 52 .
- the second groove 52 can guide the flow direction of the insulating glue column 70 , preventing the insulating glue column 70 from flowing to contact the pad group 51 .
- forming the insulating glue column 70 between the growth substrate 10 and the display backplane 50 specifically includes: forming a cross-section between the growth substrate 10 and the display backplane 50 with narrow ends and a wide middle. Insulating glue post 70.
- the narrower end of the insulating glue column 70 bonded to the growth substrate 10 can not only make the insulating glue column 70 bond to the growth substrate 10 , but also ensure that the insulating glue column 70 does not contact the LED chip 20 .
- the wide middle part of the insulating glue column 70 can make the insulating glue column 70 have a sufficient amount, so that the insulating glue column 70 has sufficient supporting force for the growth substrate 10 and the display backplane 50, preventing the growth substrate 10 and the display backplane 50 from The relative position changes.
- the narrower end of the insulating glue column 70 bonded to the display backplane 50 can not only make the insulating glue column 70 adhere to the display backplane 50 , but also ensure that the insulating glue column 70 does not contact the pad group 51 .
- the insulating glue column 70 has a second section along its thickness direction, the second section has a third bottom edge 71 in contact with the growth substrate 10 , and a third bottom edge 71 in contact with the display backplane 50 .
- Four bottom sides 72 the width of the insulating glue column 70 gradually increases from the third bottom side 71 to its middle, and the width from the fourth bottom side 72 to its middle gradually increases.
- the width of the second section of the insulating glue column 70 gradually increases from the two ends to the middle in the thickness direction. Because the insulating glue column 70 is easy to contact the LED chip 20 at the position of the third bottom edge 71, and is easy to be in contact with the pad group 51 at the position of the fourth bottom edge 72, then the third bottom edge 71 is set narrower, thus, It can not only make the insulating glue column 70 adhere to the growth substrate 10 , but also ensure that the insulating glue column 70 is not in contact with the LED chip 20 . Setting the fourth bottom edge 72 narrower can not only make the insulating glue column 70 adhere to the display backplane 50 , but also ensure that the insulating glue column 70 does not contact the pad group 51 .
- the width of the rest of the positions between the third bottom edge 71 and the fourth bottom edge 72 gradually increases, so that the insulating glue column 70 has a sufficient amount, so that the insulating glue column 70 is sufficient for the growth substrate 10 and the display backplane 50.
- the supporting force prevents the relative positions of the growth substrate 10 and the display backplane 50 from changing.
- the second section is elliptical, and the major axis of the ellipse where the second section is located is parallel to the thickness direction of the insulating glue column 70 .
- the position where it is in contact with the growth substrate 10 is also a straight line, and the second cross section is oval, which can make the second cross section narrow at both ends and wide in the middle, so as to ensure that the insulating glue column 70 does not interfere with the LED chip 20 and the bonding pad group. 51 contact, have sufficient adhesive force, and have a sufficient amount to support the growth substrate 10 and the display backplane 50 .
- the second cross-section may also be an isosceles trapezoid with two lower bases butted, and the upper base of one isosceles trapezoid is in contact with the growth substrate 10.
- This shape may also make the second The two cross-sections are narrow at both ends and wide in the middle, so as to ensure that the insulating glue column 70 does not contact the LED chip 20 and the pad group 51, has sufficient adhesion, and has enough amount to support the growth substrate 10 and the display backplane 50 .
- S130 Referring to FIG. 13 , separate the LED chip 20 from the growth substrate 10 by laser lift-off method, and drop the separated LED chip 20 to the corresponding on pad set 51.
- the insulating glue column 70 is connected to the growth substrate 10 and the display backplane 50, the positions of the two are relatively fixed, thus ensuring the accurate alignment of the LED chip 20 and the pad group 51, so that when the LED chip 20 falls, it can accurately fall to On the corresponding pad group 51 , thus, the accuracy of the position of the LED chip 20 can be increased, so that the LED chip 20 can be welded well.
- FIG. 14 is a specific flow diagram of the process shown in FIG.
- a mask can be used to shield the position that does not need laser irradiation, so as to prevent the laser from being on the insulating glue column 70 .
- the growth substrate 10 is separated. Specifically, the growth substrate 10 can be moved to other positions using tools.
- the adhesion force of the insulating glue column 70 to the display backplane 50 is smaller than that to the growth substrate 10, so when using a tool When the growth substrate 10 is removed, the insulating glue column 70 is carried away by the growth substrate 10 , so that the insulating glue column 70 is separated from the display backplane 50 . In this way, it is possible to prevent the insulating glue column 70 from remaining on the display backplane 50 from affecting the display of the LED chip 20 , and to prevent the insulating glue column 70 from causing poor heat dissipation of the final manufactured LED display device.
- Step S140 bonding the LED chip 20 to the corresponding pad group 51 on the display backplane 50 .
- bonding can be performed by heating and pressing.
- step S130 the LED chip 20 is accurately dropped to contact with the bonding pad group 51 , then during bonding, the LED chip 20 will also accurately correspond to the bonding pad group 51 , so that the alignment accuracy can be improved.
- the LED chip 20 can be, for example, a red LED, and other colors; such as green LED and blue LED can be transferred in the same way. Let me repeat.
- the mass transfer method provided by this embodiment can directly transfer the LED chip 20 from the growth substrate 10 to the display backplane 50, and the transfer process is greatly simplified; and in the transfer process, only the insulating adhesive material 60- Only one kind of glue is needed, and less consumables are required, so the cost of the whole transfer process is reduced.
- the adhesive force of the insulating adhesive material 60 is also used to support the growth substrate 10 and the display backplane 50, which can ensure the precise alignment of the LED chip 20 and the pad group 51, so that the welding strength of the LED chip 20 is improved. Guaranteed to ensure that the LED chip 20 is properly connected to the drive circuit to prevent the LED chip 20 from falling off the display backplane 50 .
- FIG. 15 is a flowchart of a mass transfer method provided in another embodiment of the present application.
- the mass transfer method provided in this embodiment specifically includes the following steps:
- S200 Referring to FIG. 16 , inspect the dead LED chip 20a on the growth substrate 10 .
- Micro Automated Optical Inspection (AOI) or Micro Photoluminescence (PL) inspection equipment can be used to detect the optical specificity and appearance quality of the LED chip 20 on the growth substrate 10 in advance, and generate a corresponding The data mapping (Mapping Data).
- AOI Micro Automated Optical Inspection
- PL Micro Photoluminescence
- the dead LED chips 20 a on the growth substrate 10 can be known. Therefore, when the LEDs are transferred to the display backplane 50, dead LED chips 20a can be avoided, ensuring that the LED chips 20 transferred to the display backplane 50 have better appearance and better wavelength consistency.
- step S210 Referring to FIG. 17 , apply insulating glue 60 on the growth substrate 10 , so that any two adjacent LED chips 20 have the insulating glue 60 between them. This step is the same as step S100 in the above embodiment, and will not be repeated here.
- step S220 Referring to FIG. 18 , dispose the growth substrate 10 above the display backplane 50 such that the distance between the growth substrate 10 and the display backplane 50 is greater than the height of the LED chips 20 .
- This step is the same as step S110 in the above embodiment, and will not be repeated here.
- step S230 Referring to FIG. 19, heat the insulating adhesive material 60 to soften the insulating adhesive material 60, and the softened insulating adhesive material 60 is extended to be bonded to the display backplane 50, so that An insulating glue column 70 is formed between the growth substrate 10 and the display backplane 50 .
- This step is the same as step S120 in the above embodiment, and will not be repeated here.
- S240 Referring to FIG. 20 , separate at least part of the LED chips 20 except the bad LED chips 20a from the growth substrate 10 by laser lift-off method, and the separated LED chips 20 are along the insulating glue column around them.
- the channels formed by 70 drop onto the corresponding pad groups 51 .
- the LED chip 20 falls to contact with the bonding pad group 51.
- the insulating adhesive material 60 connects the growth substrate 10 and the display backplane 50, the positions of the two are relatively fixed, thereby ensuring that the LED chip 20 and the bonding pad If the groups 51 are accurately aligned, then when the LED chips 20 fall, they can accurately fall onto the corresponding pad groups 51 .
- Step S200 has detected the bad LED chips 20a, so when transferring the LED chips 20 to the display backplane 50 in batches, the bad LED chips 20a can be avoided, and only LED chips with normal appearance and good wavelength consistency can be selected. 20 for the transfer.
- the laser irradiates the normal LED chip 20 in a targeted manner, avoiding the dead LED chip 20a, so that the normal LED chip 20 is peeled off from the growth substrate 10, while the dead pixel LED chip 20a is left on the growth substrate 10, and the LED chip 20a of the dead pixel remains on the growth substrate 10.
- the bad LED chips 20a are removed together with the growth substrate 10, thereby ensuring that the LED chips 20 transferred to the display backplane 50 are all LED chips 20 with normal appearance and good wavelength consistency. , so that the uniformity of light emission of the finally prepared display device is better, and the quality of the prepared display device can be improved.
- S250 Bonding the LED chip 20 to the corresponding pad group 51 on the display backplane 50 by heating and pressing.
- FIG. 21 and FIG. 22 The process flow diagram of step S350 shown in 21.
- step S300 Detect the dead LED chips 20a on the growth substrate 10. This step is the same as step S200 in the above embodiment, and will not be repeated here.
- step S310 Spread the insulating adhesive material 60 on the growth substrate 10, so that any two adjacent LED chips 20 have the insulating adhesive material 60 between them. This step is the same as step S100 in the above embodiment, and will not be repeated here.
- step S320 disposing the growth substrate 10 above the display backplane 50, so that the distance between the growth substrate 10 and the display backplane 50 is greater than the height of the LED chip 20. This step is the same as step S110 in the above embodiment, and will not be repeated here.
- step S330 Heat the insulating adhesive material 60 to soften the insulating adhesive material 60, and the softened insulating adhesive material 60 is extended to be bonded to the display backplane 50, so as to be bonded to the growth substrate 10.
- An insulating glue column 70 is formed between the display backplane 50 . This step is the same as step S120 in the above embodiment, and will not be repeated here.
- step S340 Separate at least part of the LED chips 20 except the bad LED chips 20a from the growth substrate 10 by laser lift-off method, and the separated LED chips 20 are formed along the channels formed by the insulating glue columns 70 around them. drop onto the corresponding pad group 51. This step is the same as step S240 in the above embodiment, and will not be repeated here.
- S350 Referring to FIG. 22 , add another LED chip 20 to the bonding pad group 51 corresponding to the bad LED chip 20a. In this way, it is possible to prevent the pad group 51 corresponding to the bad pixel LED chip 20a from being vacant, so that the pixels on the finally prepared display device are relatively complete, thereby improving the display effect.
- S360 Bonding the LED chip 20 to the corresponding pad group 51 on the display backplane 50 by heating and pressing.
- the normal LED chip 20 can be bonded with the repair adhesive plate 80, and then the LED chip 20 is transferred to the pad group 51 corresponding to the bad LED chip 20a.
- the LED chip 20 and the pad group 51 need to be welded in the end. Specifically, the LED chip 20 and the pad group 51 can be welded by heating and pressing, so that The LED chips 20 are reliably connected to improve the quality of the display device.
- FIG. 26 another embodiment of the present application provides a display device, which specifically includes a display backplane 50 and a plurality of LED chips 20, wherein the LED chips 20 adopt the above-mentioned
- the mass transfer method provided by any embodiment is transferred to the display backplane 50 .
- An embodiment of the present application further provides a display device, including a driving circuit and the LED light emitting device described in any embodiment of the present application, wherein the LED light emitting device is electrically connected to the driving circuit.
- the display device may be a mobile phone, a tablet computer, a notebook computer, and other display devices with display effects and/or touch effects, which are not specifically limited.
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Abstract
一种巨量转移方法、LED显示器件及显示装置,巨量转移方法包括在生长基板(10)上涂抹绝缘胶材(60),使相邻的两个LED芯片(20)之间具有绝缘胶材(60);将生长基板(10)设于显示背板(50)上方,使生长基板(10)与显示背板(50)的间距大于LED芯片(20)的高度;将软化后的绝缘胶材(60)延伸至与显示背板(50)粘接,以在生长基板(10)和显示背板(50)之间形成绝缘胶柱(70);将LED芯片(20)与生长基板(10)分离,分离后的LED芯片(20)沿其周围的绝缘胶柱(70)构成的通道下落至对应的焊盘组上;将LED芯片(20)键合于显示背板(50)上的对应焊盘组上。
Description
本申请涉及巨量转移技术领域,尤其涉及巨量转移方法、LED显示器件及显示装置。
目前,微型发光二极管(Micro Light-emitting Diode,Micro LED)显示面板作为新一代显示技术,具有亮度更高、发光效率更好以及功耗更低等优势,使得Micro LED被广泛使用。
Micro LED显示面板上一般包括多个像素区域,每个像素区域包括红光LED芯片、蓝光LED芯片和绿光LED芯片。在显示面板制备过程中,需要将三种芯片从各自的生长基板上转移到显示背板上。目前采用的转移方式所需材质较多,成本较高,并且过程比较繁琐,整个过程需要将LED芯片转移多次,很容易导致LED芯片不能与显示背板上的焊盘组对位,使得LED芯片的焊接强度难以保证,导致LED芯片与驱动电路连接异常,甚至于从显示背板上脱落。
鉴于上述现有技术的不足,本申请的目的在于提供一种巨量转移方法、LED显示器件及显示装置,旨在解决LED芯片不能与显示背板上的焊盘组对位,使得LED芯片的焊接强度难以保证,导致LED芯片与驱动电路连接异常,甚至于从显示背板上脱落。
本申请第一方面提供一种巨量转移方法,包括:在生长基板上涂抹绝缘胶材,使得任意相邻的两个LED芯片之间均具有所述绝缘胶材;将所述生长基板设置于显示背板上方,使得所述生长基板与所述显示背板之间的间距大于所述LED芯片的高度;对所述绝缘胶材进行加热,以将所述绝缘胶材软化,软化后的所述绝缘胶材延伸至与所述显示背板粘接,以在所述生长基板和所述显示背板之间形成绝缘胶柱;将所述LED芯片与所述生长基板分离,分离后的所述LED芯片沿其周围的所述绝缘胶柱构成的通道下落至对应的焊盘组上;将所述LED芯片键合于所述显示背板上的对应的所述焊盘组上。
上述巨量转移方法,可以将LED芯片直接从生长基板上转移至显示背板上,转移过程大量简化;且转移过程中,仅需要绝缘胶材一种胶材即可,所需耗材较少,因此整个转移过程中的成本降低。另外,还利用绝缘胶材的粘接力,起到支撑生长基板和显示背板的作用,可以确保LED芯片和焊盘组精确对位,使得LED芯片的焊接强度有所保证,确保LED芯片与驱动电路连接正常,防止LED芯片从显示背板上脱落。
在一些实施例中,使得任意相邻的两个LED芯片之间均具有所述绝缘胶材之后,还使得所述绝缘胶材与相邻的两个所述LED芯片之间具有间隔。使得绝缘胶材与相邻的两个LED芯片之间具有间隔,从而使得绝缘胶材后续形成的绝缘胶柱也相邻的两个LED芯片之间具有间隔,防止后续LED芯片剥离时,绝缘胶柱粘接在LED芯片,避免影响LED芯片的出光亮度和发光一致性。
在一些实施例中,在生长基板上涂抹绝缘胶材,使得任意相邻的两个LED芯片之间均具有所述绝缘胶材具体包括:在生长基板上涂抹绝缘胶材,使得任意相邻的两个LED芯片之间均具有截面呈两端窄中部宽形状的所述绝缘胶材。该截面指绝缘胶材沿其厚度方向的截面。由此,可以使得绝缘胶材呈两端窄、中部宽的形状,从而确保绝缘胶材不与LED芯片接触、有足够的粘接力,以及有足够的储备量。
在一些实施例中,在生长基板上涂抹绝缘胶材,使得任意相邻的两个LED芯片之间均具有所述绝缘胶材具体包括:在生长基板上涂抹绝缘胶材,使得任意相邻的两个LED芯片之间均具有截面呈圆形或椭圆形的所述绝缘胶材。该截面指绝缘胶材沿其厚度方向的截面。由此,可以使得绝缘胶材呈两端窄、中部宽的形状,从而确保绝缘胶材不与LED芯片接触、有足够的粘接力,以及有足够的储备量。
在一些实施例中,在所述生长基板和所述显示背板之间形成绝缘胶柱具体包括:在所述生长基板和所述显示背板之间形成截面呈两端窄、中部宽形状的所述绝缘胶柱。具体的,可以在生长基板和所述显示背板之间形成截面呈椭圆形的所述绝缘胶柱。上述截面指的是沿绝缘胶柱的厚度方向的截面。
由此,绝缘胶柱与生长基板粘接的较窄的一端,既能使得绝缘胶柱与生长基板粘接,又能确保绝缘胶柱不与LED芯片接触。绝缘胶柱较宽的中部可以使得绝缘胶柱有足够的量,从而使得绝缘胶柱对生长基板和显示背板有足够的支撑力,防止生长基板和显示背板的相对位置发生变化。绝缘胶柱与显示背板粘接的较窄的一端,既能使得绝缘胶柱与显示背板粘接,又能确保绝缘胶柱不与焊盘组接触。
在一些实施例中,在所述生长基板和所述显示背板之间形成绝缘胶柱具体包括:在所述生长基板和所述显示背板之间形成截面呈椭圆形的绝缘胶柱。由此,确保绝缘胶柱不与LED芯片和焊盘组接触、有足够的粘接力,以及有足够的量供支撑生长基板和显示背板。
在一些实施例中,在所述生长基板和所述显示背板之间形成绝缘胶柱之后,所述绝缘胶柱与相邻的两个所述LED芯片之间具有间隔。由此,可以防止后续LED芯片剥离时,绝缘胶柱粘接在LED芯片,避免影响LED芯片的出光亮度和发光一致性。
在一些实施例中,在生长基板上涂抹绝缘胶材,使得任意相邻的两个LED芯片之间均具有所述绝缘胶材具体包括:在生长基板上涂抹绝缘胶材,使得任意相邻的两个LED芯片之间均具有所述绝缘胶材,且使得所述绝缘胶材低于或者平齐于所述LED芯片。由此,可以防止绝缘胶材过厚,从而防止LED芯片和焊盘组焊接时,绝缘胶材流入LED芯片和焊盘组之间,导致焊接强度变差;另外,还可以节省原材料,降低成本。
在一些实施例中,在生长基板上涂抹绝缘胶材之前,所述巨量转移方法还包括:在生长基板上任意相邻的两个LED芯片设置第一凹槽;在生长基板上涂抹绝缘胶材,使得任意相邻的两个LED芯片之间均具有所述绝缘胶材具体包括:在生长基板上涂抹绝缘胶材,使得任意相邻的两个LED芯片之间均具有所述绝缘胶材,且使得至少部分所述绝缘胶材位于所述第一凹槽内。由此,在后续绝缘胶材软化后,第一凹槽可以引导绝缘胶材的流向,防止绝缘胶材流动至与LED芯片接触。
在一些实施例中,将所述绝缘胶材软化之前,所述巨量转移方法还包括:所述显示背板上相邻的焊盘组之间设置第二凹槽;将所述绝缘胶材软化,软化后的所述绝缘胶材延伸至与所述显示背板粘接,以在所述生长基板和所述显示背板之间形成绝缘胶柱,具体包括:将所述绝缘胶材软化,软化后的所述绝缘胶材延伸至与所述显示背板粘接,与所述显示背板粘接的至少部分所述绝缘胶材延伸至所述第二凹槽内,以在所述生长基板和所述显示背板之间形成绝缘胶柱。由此,在后续绝缘胶材软化后,第二凹槽可以引导绝缘胶材的流向,防止绝缘胶材流动至与焊盘组接触。
在一些实施例中,将所述生长基板设置于显示背板上方,使得所述生长基板与所述显示背板之间的间距大于所述LED芯片的高度,具体包括:将所述生长基板设置于显示背板上方,使得所述生长基板与所述显示背板之间的间距大于或等于20微米。由此,既能使绝缘胶材软化后流动至与显示背板良好粘接,又能确保绝缘胶材对LED芯片有足够的粘接力,使得LED芯片可以被支撑在与焊盘组精确对位的位置,且不会过多的流动至显示背板上,可以确保焊盘组不受绝缘胶材的影响。
在一些实施例中,在生长基板上涂抹绝缘胶材之前,所述巨量转移方法还包括:检测所述生长基板上的坏点LED芯片;将所述LED芯片与所述生长基板分离具体包括:将除了坏点LED芯片之外的至少部分LED芯片与所述生长基板分离。由此可以确保转移至显示背板上的LED芯片均为外观正常且波长一致性较好的LED芯片,使得最终被制备的显示器件的发光一致性较好,可以提升制备的显示器件的质量。
在一些实施例中,将除了坏点LED芯片之外的至少部分LED芯片与所述生长基板分离之后,所述巨量转移方法还包括:补充另一LED芯片至坏点LED芯片对应的焊盘组处。由此,可以防止坏点LED芯片对应的焊盘组处空缺,使得最终被制备的显示器件上像素比较完整,从而可以提升显示效果。
本申请第二方面提供一种LED显示器件,包括显示背板和多个LED芯片,多个所述LED芯片通过本申请第一方面中任一项所述的巨量转移方法转移至所述显示背板上。
本申请第三方面提供一种显示装置,包括驱动电路和本申请第二方面中任一项所述的LED显示器件,所述LED显示器件和所述驱动电路电连接。
上述巨量转移方法,可以将LED芯片直接从生长基板上转移至显示背板上,转移过程大量简化;且转移过程中,仅需要绝缘胶材一种胶材即可,所需耗材较少,因此整个转移过程中的成本降低。另外,还利用绝缘胶材的粘接力,起到支撑生长基板和显示背板的作用,可以确保LED芯片和焊盘组精确对位,使得LED芯片的焊接强度有所保证,确保LED芯片与驱动电路连接正常,防止LED芯片从显示背板上脱落。
图1是现有技术提供的生长基板的结构示意图。
图2是现有技术提供的生长基板另一视角的结构示意图。
图3是现有技术提供的临时基板粘接在生长基板上的结构示意图。
图4是现有技术提供的临时基板转移生长基板上LED芯片的过程结构示意图。
图5是现有技术提供的临时基板转移有LED芯片的结构示意图。
图6是现有技术提供的临时基板转移有LED芯片另一视角的结构示意图。
图7是现有技术提供的转移基板转移LED芯片至显示背板上的结构示意图。
图8是现有技术提供的显示背板转移有LED芯片的结构示意图。
图9是本申请一种实施例提供的巨量转移方法的流程图。
图10至图13是本申请一种实施例提供的巨量转移方法的工艺流程示意图。
图14是图13中所示工艺流程的具体流程示意图。
图15是本申请另一种实施例提供的巨量转移方法的流程图。
图16至图20是本申请另一种实施例提供的巨量转移方法的工艺流程示意图。
图21是本申请又一种实施例提供的巨量转移方法的流程图。
图22是图21中所示步骤S350的工艺流程示意图。
图23是本申请实施例提供的绝缘胶材特性示意图。
图24是本申请实施例中生长基板上设置第一凹槽的结构示意图。
图25是本申请实施例中显示背板上设置第二凹槽的结构示意图。
图26是本申请实施例提供的LED显示器件的结构示意图。
附图标记说明:10-生长基板,11-第一凹槽,20-LED芯片,20a-坏点LED芯片,30-临时基板,40-转移基板,50-显示背板,51-焊盘组,52-第二凹槽,60-绝缘胶材,61-第一底边,62-第二底边,70-绝缘胶柱,71-第三底边,72-第四底边,80-修补粘板。
为了便于理解本申请,下面将参照相关附图对本申请进行更全面的描述。附图中给出了本申请的较佳实施方式。但是,本申请可以以许多不同的形式来实现,并不限于本文所描述的实施方式。相反地,提供这些实施方式的目的是使对本申请的公开内容理解的更加透彻全面。
除非另有定义,本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施方式的目的,不是旨在于限制本申请。
具体可参考图1至图6,可见,图1是本申请实施例提供的生长基板的结构示意图;图2是本申请实施例提供的生长基板另一视角的结构示意图;图3是本申请实施例提供的临时基板粘接在生长基板上的结构示意图;图4是本申请实施例提供的临时基板转移生长基板上LED芯片的过程结构示意图;图5是本申请实施例提供的临时基板转移有LED芯片的结构示意图;图6是本申请实施例提供的临时基板转移有LED芯片另一视角的结构示意图。
一般情况下,LED芯片20转移至显示背板50上时,分别将红色LED芯片、蓝色LED芯片和绿色LED芯片进行转移,下面以一种LED芯片20为例进行说明,其余两种LED芯片同样的道理,本申请中不再赘述。
LED芯片20转移至显示背板50上,具体过程如下。
步骤S10:提供生长基板10(Wafer),生长基板10上生长有LED芯片20。然后利用临时基板30上的粘合层,将LED芯片20粘合到临时基板30上。接着剥离LED芯片20上的生长基板10。由此可以将LED芯片20转移至临时基板30上。
步骤S11:利用转移基板40上的粘合层,选择性的将LED芯片20粘合到转移基板40上;参考图7,图7中显示转移基板40在临时基板30上选择性的粘接LED芯片20。
步骤S12:将转移基板40上的LED芯片20转移至显示背板50上。参考图8,图8中显示出显示背板50上成功转移LED芯片20的示意图。转移基板40转移LED芯片20到显示背板50上过程,同时也是巨量焊接的过程。因此,在转移完成后,LED芯片20已经完成金铟共晶键合。
上述巨量转移过程中,临时基板上粘接层的粘附性需小于转移基板上粘接层的粘附性,转移过程所需耗材较多,成本很高。且整个过程需要从生长基板到临时基板,然后从临时基板到转移基板,再从转移基板到显示背板,整个流程也比较繁琐,需要将LED芯片转移多次,很容易导致LED芯片不能与显示背板上的焊盘组对位,使得LED芯片的焊接强度难以保证,导致LED芯片与驱动电路连接异常,甚至于从显示背板上脱落。
为了解决上述问题,本申请一种实施例提供巨量转移方法。具体请参考图9至图13,图9是本申请一种实施例提供的巨量转移方法的流程图,图10至图13是本申请一种实施例提供的巨量转移方法的工艺流程示意图。其中,巨量转移方法包括以下步骤:
参考图10,S100:在生长基板10上涂抹绝缘胶材60,使得任意相邻的两个LED芯片20之间均具有所述绝缘胶材60。该绝缘胶材60为非导电胶(Non-Conductive Adhesive Film,NCF)。NCF在温度变化时,其粘性变化比较明显。
需要理解的是,LED芯片20一般在生长基板10上阵列排布,且任意相邻的两个LED芯片20之间均具有间隔,多个间隔共同组成通道。本领域技术人员还需要理解的是,为了使得绝缘胶材60与粘接LED芯片20之间具有间隔,绝缘胶材60不能充满整个通道,从而防止LED芯片20与绝缘胶材60接触,防止后续LED芯片20从生长基板10上剥离时,绝缘胶材60形成的绝缘胶柱70粘接在LED芯片20,避免胶材影响LED芯片20的出光亮度和发光一致性。
在一些实施例中,在生长基板10上涂抹绝缘胶材60具体可以包括:在生长基板10上涂抹沿其厚度方向的截面呈两端窄、中间宽的绝缘胶材60。
具体的,所述绝缘胶材60沿其厚度方向具有第一截面,所述第一截面具有与所述生长基板10接触的第一底边61、以及具有背离所述生长基板10的第二底边62。所述绝缘胶材60从所述第一底边61到其中部之间的宽度逐渐增大,从所述第二底边62到其中部之间的宽度逐渐增大。
也即使得绝缘胶材60的第一截面在其厚度方向上,从两端到中间宽度逐渐增加。因绝缘胶材60容易在第一底边61和第二底边62位置处与LED芯片20接触,那么将第一底边61和第二底边62设置的较窄,由此,既能使得绝缘胶材60与生长基板10粘接,又能确保绝缘胶材60不与LED芯片20接触。位于第一底边61和第二底边62之间的其余位置宽度逐渐增加,可以使得绝缘胶材60有足够的量,以便于后续绝缘胶材60软化后有足够的量可以流动至粘接在显示背板50上。
详细的,在一些具体实施方式中,在生长基板10上涂抹绝缘胶材60,使得任意相邻的两个LED芯片20之间均具有所述绝缘胶材60具体包括:在生长基板10上涂抹绝缘胶材60,使得任意相邻的两个LED芯片20之间均具有截面呈圆形或椭圆形的所述绝缘胶材60。
也即,上述的第一截面可以呈圆形,当然,需要理解的是,因绝缘胶材60具有一定的粘性,因此其与生长基板10接触位置会发生变形,也即呈圆形的第一截面和生长基板10接触的的位置呈直线,并不呈标准的圆形。第一截面呈圆形,可以使得第一截面呈两端窄、中部宽的形状,从而确保绝缘胶材60不与LED芯片20接触、有足够的粘接力,以及有足够的储备量。
在另一些具体实施方式中,上述的第一截面呈椭圆形,且所述第一截面所在椭圆的长轴平行于所述绝缘胶材60的厚度方向。当然其与生长基板10接触的位置也呈直线,第一截面呈椭圆形,可以使得第一截面呈两端窄、中部宽的形状,从而确保绝缘胶材60不与LED芯片20接触、有足够的粘接力,以及有足够的储备量供后续粘接显示背板50使用。
当然,在又一些具体实施方式中,上述的第一截面也可以呈两个下底边对接的等腰梯形,其中一个等腰梯形的上底边与生长基板10接触,该种形状,也可以使得第一截面呈两端窄、中间宽,从而确保绝缘胶材60不与LED芯片20接触、有足够的粘接力,以及有足够的储备量供后续粘接显示背板50使用。
在一些具体实施方式中,在生长基板10上涂抹绝缘胶材60,使得任意相邻的两个LED芯片20之间均具有所述绝缘胶材60具体包括:在生长基板10上涂抹绝缘胶材60,使得任意相邻的两个LED芯片20之间均具有所述绝缘胶材60,且使得所述绝缘胶材60低于或者平齐于所述LED芯片20。具体的,绝缘胶材60具有背离生长基板10的第一表面,以及具有与生长基板10连接的第二表面。其中,可将所述第一表面加工至与所述LED芯片20背离所述生长基板10一侧所在表面相平齐;或者是可将所述第一表面加工至低于所述LED芯片20背离所述生长基板10的一侧所在表面。由此,可以防止绝缘胶材60过厚,从而防止LED芯片20和焊盘组51焊接时,绝缘胶材60流入LED芯片20和焊盘组51之间,导致焊接强度变差;另外,还可以节省原材料,降低成本。
示例性的,在生长基板10上涂抹绝缘胶材60之前,所述巨量转移方法还包括:在生长基板10上任意相邻的两个LED芯片20设置第一凹槽11。那么,在生长基板10上涂抹绝缘胶材60,使得任意相邻的两个LED芯片20之间均具有所述绝缘胶材60具体包括:在生长基板10上涂抹绝缘胶材60,使得任意相邻的两个LED芯片20之间均具有所述绝缘胶材60,且使得至少部分所述绝缘胶材60位于所述第一凹槽11内。参考图24,也即可以在所述通道内设第一凹槽11,所述绝缘胶材60填充于所述通道内时,至少部分位于所述第一凹槽11内。由此,在后续绝缘胶材60软化后,第一凹槽11可以引导绝缘胶材60的流向,防止绝缘胶材60流动至与LED芯片20接触。
S110:参考图11,将所述生长基板10设置于显示背板50上方,使得所述生长基板10与所述显示背板50之间的间距大于所述LED芯片20的高度。该显示背板50具体可以为薄膜晶体管(Thin Film Transistor,TFT)基板、印刷电路板(Printed Circuit Board,PCB)等,本申请中不做限制。也即,将所述生长基板10与显示背板50相互间隔的设置于显示背板50上方,因LED芯片20最终需要与显示背板50上的焊盘组51焊接,因此需要使得多个所述LED芯片20与所述显示背板50上的多个焊盘组51一一对应。
可以理解的是,生长基板10与显示背板50的间距,具体指的是生长基板10面对显示背板50的表面与显示背板50面对生长基板10的表面之间距离。
显示背板50上一般设置有驱动电路等,该驱动电路可以驱动LED芯片20,使得LED芯片20顺利发光,从而确保相关显示器件可以正常使用。显示背板50上的焊盘组51可以由焊锡膏等焊料点状涂抹在显示背板50上形成。
示例性的,将所述生长基板10设置于显示背板50上方,使得所述生长基板10与所述显示背板50之间的间距大于所述LED芯片20的高度,具体包括:将所述生长基板10设置于显示背板50上方,使得所述生长基板10与所述显示背板50之间的间距大于或等于20微米。若生长基板10与显示背板50距离过近,可能会导致绝缘胶材60后续软化后,流动至显示背板50上的部分过多,从而覆盖到焊盘组51上,导致焊盘组51不能与LED芯片20良好焊接。若生长基板10与显示背板50距离过远,则可能会导致绝缘胶材60在流动至显示背板50上时,在显示背板50和生长基板10之间拉的过长,影响绝缘胶材60对LED芯片20的粘结力,可能会导致绝缘胶材60发生倾斜,从而影响LED芯片20的对位精度。
设置上述距离,则既能使绝缘胶材60软化后流动至与显示背板50良好粘接,又能确保绝缘胶材60对LED芯片20有足够的粘接力,使得LED芯片20可以被支撑在与焊盘组51精确对位的位置,且不会过多的流动至显示背板50上,可以确保焊盘组51不受绝缘胶材60的影响。
更具体的,将所述生长基板10设置于显示背板50上方时,所述生长基板10与所述显示背板50之间的间隔还需要小于或等于70微米,由此,可以防止显示背板50与生长基板10之间的距离过远而导致绝缘胶材60对显示背板50的粘接力较弱。
S120:参考图12,对所述绝缘胶材60进行加热,以将所述绝缘胶材60软化,软化后的所述绝缘胶材60延伸至与所述显示背板50粘接,以在所述生长基板10和所述显示背板50之间形成绝缘胶柱70。具体可以采用激光加热的方式使得绝缘胶柱70软化。
具体的,可以在生长基板10和显示背板50之间形成绝缘胶柱70,且使得该绝缘胶柱70与相邻的两个LED芯片20之间具有间隔。由此,在后续剥离LED芯片20时,可以防止绝缘胶柱70与LED芯片20粘接,从而避免胶材影响LED芯片的出光亮度和发光一致性。
参考图23,其中曲线L1为温度变化曲线,曲线L2为绝缘胶材60粘度变化曲线。可见,在温度T从20摄氏度(℃)上升到120℃左右过程中,绝缘胶材60的粘度持续下降;温度从120℃至180℃之间时,其粘度基本保持不变;温度在180℃至200℃之间时,粘性又开始上升。
因此,加热时的温度可以控制在120摄氏度至140摄氏度之间,该温度小于制备焊盘组51的焊料的熔点,可以防止焊料熔化。另外,在该温度范围内,绝缘胶柱70的流动性较好,可以确保绝缘胶材60一部分流动至显示背板50上,与显示背板50粘接,而另外一部分绝缘胶材60继续保持粘接生长基板10状态,还有一部分处于显示背板50和生长基板10之间,使得显示背板50和生长基板10处于暂时连接,从而保持位置相对固定的状态。
当停止加热,温度开始回落后,绝缘胶材60的粘度会随着温度下降而上升,此时绝缘胶材60冷却,从而较好的粘接生长基板10和显示背板50,生长基板10和显示背板50可以被绝缘胶柱70粘接支撑,使得生长基板10和显示背板50的位置相对固定,从而可以使得LED芯片20与焊盘组51的位置精确对应,提升LED芯片20的对位精度。
示例性的,将所述绝缘胶材60软化之前,所述巨量转移方法还包括:所述显示背板50上相邻的焊盘组51之间设置第二凹槽52。那么,将所述绝缘胶材60软化,软化后的所述绝缘胶材60延伸至与所述显示背板50粘接,以在所述生长基板10和所述显示背板50之间形成绝缘胶柱70,具体包括:将所述绝缘胶材60软化,软化后的所述绝缘胶材60延伸至与所述显示背板50粘接,与所述显示背板50粘接的至少部分所述绝缘胶材60延伸至所述第二凹槽52内,以在所述生长基板10和所述显示背板50之间形成绝缘胶柱70。参考图25,也即所述显示背板50上相邻的焊盘组51之间设第二凹槽52,使得软化后的部分所述绝缘胶材60流动至粘接在所述显示背板50上时,至少部分软化后的所述绝缘胶材60流动至所述第二凹槽52内。由此,在后续绝缘胶柱70软化后,第二凹槽52可以引导绝缘胶柱70的流向,防止绝缘胶柱70流动至与焊盘组51接触。
示例性的,在所述生长基板10和所述显示背板50之间形成绝缘胶柱70具体包括:在生长基板10和显示背板50之间形成截面呈两端窄、中间宽的形状的绝缘胶柱70。由此,绝缘胶柱70与生长基板10粘接的较窄的一端,既能使得绝缘胶柱70与生长基板10粘接,又能确保绝缘胶柱70不与LED芯片20接触。绝缘胶柱70较宽的中部可以使得绝缘胶柱70有足够的量,从而使得绝缘胶柱70对生长基板10和显示背板50有足够的支撑力,防止生长基板10和显示背板50的相对位置发生变化。绝缘胶柱70与显示背板50粘接的较窄的一端,既能使得绝缘胶柱70与显示背板50粘接,又能确保绝缘胶柱70不与焊盘组51接触。
详细的,所述绝缘胶柱70沿其厚度方向具有第二截面,所述第二截面具有与所述生长基板10接触的第三底边71、以及具有与所述显示背板50接触的第四底边72;所述绝缘胶柱70从所述第三底边71到其中部之间的宽度逐渐增大,从所述第四底边72到其中部之间的宽度逐渐增大。
也即,绝缘胶柱70的第二截面在其厚度方向上,从两端到中间宽度逐渐增加。因绝缘胶柱70容易在第三底边71位置处与LED芯片20接触,容易在第四底边72位置处于焊盘组51接触,那么将第三底边71设置的较窄,由此,既能使得绝缘胶柱70与生长基板10粘接,又能确保绝缘胶柱70不与LED芯片20接触。而将第四底边72设置的较窄,既能使得绝缘胶柱70与显示背板50粘接,又能确保绝缘胶柱70不与焊盘组51接触。而位于第三底边71和第四底边72之间的其余位置宽度逐渐增加,可以使得绝缘胶柱70有足够的量,从而使得绝缘胶柱70对生长基板10和显示背板50有足够的支撑力,防止生长基板10和显示背板50的相对位置发生变化。
在一些具体实施方式中,第二截面呈椭圆形,且所述第二截面所在椭圆的长轴平行于所述绝缘胶柱70的厚度方向。当然其与生长基板10接触的位置也呈直线,第二截面呈椭圆形,可以使得第二截面呈两端窄、中部宽的形状,从而确保绝缘胶柱70不与LED芯片20和焊盘组51接触、有足够的粘接力,以及有足够的量供支撑生长基板10和显示背板50。
当然,在另一些具体实施方式中,第二截面也可以呈两个下底边对接的等腰梯形,其中一个等腰梯形的上底边与生长基板10接触,该种形状,也可以使得第二截面呈两端窄、中间宽,从而确保绝缘胶柱70不与LED芯片20和焊盘组51接触、有足够的粘接力,以及有足够的量供支撑生长基板10和显示背板50。
S130:参考图13,通过激光剥离法,将所述LED芯片20与所述生长基板10分离,分离后的所述LED芯片20沿其周围的所述绝缘胶柱70构成的通道下落至对应的焊盘组51上。因绝缘胶柱70连接生长基板10和显示背板50时,使得二者位置相对固定,从而确保了LED芯片20和焊盘组51精确对位,那么LED芯片20下落时,则可以准确下落至对应的焊盘组51上,由此,可以增加LED芯片20位置精确程度,从而使得LED芯片20可以良好焊接。
LED芯片20与生长基板10的分离,以及绝缘胶柱70与显示背板50的分离具体过程如下:参考图14,图14是图13中所示工艺流程的具体流程示意图,具体的,利用激光针对性的将LED芯片20与生长基板10剥离,可以采用腌膜(mask)对无需激光照射的位置进行遮挡,防止激光在绝缘胶柱70上。LED芯片20与生长基板10分开后,将生长基板10分离。具体可以将生长基板10利用工具挪至其他位置。
因显示背板50为金属制成,而绝缘胶柱70与金属浸润性较差,因此绝缘胶柱70对显示背板50的粘接力小于对生长基板10的粘接力,那么在利用工具挪走生长基板10时,绝缘胶柱70被生长基板10带离,从而使得绝缘胶柱70与显示背板50分离。由此,可以防止绝缘胶柱70残留在显示背板50上影响LED芯片20显示,以及避免绝缘胶柱70导致最终制备成的LED显示器件散热差。
步骤S140:将所述LED芯片20键合于所述显示背板50上的对应的所述焊盘组51上。具体可以通过加热加压方式进行键合。步骤S130中,LED芯片20准确的下落至和焊盘组51接触,那么键合时,LED芯片20也会与焊盘组51精确对应,从而可以提升对位精确性。
需要理解的是,上述过程仅以一种LED芯片20为例,该LED芯片20例如可以为红光LED,那么其余颜色;如绿光LED和蓝光LED可以采用相同的方式转移,本实施例不再赘述。
由上可见,该实施例提供的巨量转移方法,可以将LED芯片20直接从生长基板10上转移至显示背板50上,转移过程大量简化;且转移过程中,仅需要绝缘胶材60一种胶材即可,所需耗材较少,因此整个转移过程中的成本降低。另外,还利用绝缘胶材60的粘接力,起到支撑生长基板10和显示背板50的作用,可以确保LED芯片20和焊盘组51精确对位,使得LED芯片20的焊接强度有所保证,确保LED芯片20与驱动电路连接正常,防止LED芯片20从显示背板50上脱落。
本申请另一种实施例提供一种巨量转移方法,具体参考图15至图20,图15是本申请另一种实施例提供的巨量转移方法的流程图,图16至图20是本申请另一种实施例提供的巨量转移方法的工艺流程示意图。该实施例提供的巨量转移方法具体包括以下步骤:
S200:参考图16,检测所述生长基板10上的坏点LED芯片20a。具体可以利用微自动光学检测(Micro Automated Optical Inspection,AOI),或者利用微型光致发光(Micro Photoluminescence,PL)检测设备,I提前检测生长基板10上LED芯片20的光学特定与外观质量,生成相应的数据映射(Mapping Data)。由此可以获知生长基板10上的坏点LED芯片20a。从而可以在将LED转移至显示背板50上时,避开坏点LED芯片20a,确保被转移至显示背板50上的LED芯片20外观较好且波长一致性较好。
S210:参考图17,在生长基板10上涂抹绝缘胶材60,使得任意相邻的两个LED芯片20之间均具有所述绝缘胶材60。该步骤与上述实施例中步骤S100相同,不再赘述。
S220:参考图18,将所述生长基板10设置于显示背板50上方,使得所述生长基板10与所述显示背板50之间的间距大于所述LED芯片20的高度。该步骤与上述实施例中步骤S110相同,不再赘述。
S230:参考图19,对所述绝缘胶材60进行加热,以将所述绝缘胶材60软化,软化后的所述绝缘胶材60延伸至与所述显示背板50粘接,以在所述生长基板10和所述显示背板50之间形成绝缘胶柱70。该步骤与上述实施例中步骤S120相同,不再赘述。
S240:参考图20,通过激光剥离法将除了坏点LED芯片20a之外的至少部分LED芯片20与所述生长基板10分离,分离后的所述LED芯片20沿其周围的所述绝缘胶柱70构成的通道下落至对应的焊盘组51上。此时,所述LED芯片20下落至与焊盘组51相接触,因绝缘胶材60连接生长基板10和显示背板50时,使得二者位置相对固定,从而确保了LED芯片20和焊盘组51精确对位,那么LED芯片20下落时,则可以准确下落至对应的焊盘组51上。
步骤S200已经检测出坏点LED芯片20a,因此,在将LED芯片20批量转移至显示背板50时,可以避开坏点LED芯片20a,仅选择外观正常、且波长一致性较好的LED芯片20进行转移。
具体的,激光针对性的照射正常LED芯片20,避开坏点LED芯片20a,从而使得正常LED芯片20与生长基板10剥离,而坏点LED芯片20a则留在生长基板10上,在生长基板10被挪开后,坏点LED芯片20a随着生长基板10一起被挪走,由此可以确保转移至显示背板50上的LED芯片20均为外观正常且波长一致性较好的LED芯片20,使得最终被制备的显示器件的发光一致性较好,可以提升制备的显示器件的质量。
S250:加热加压所述LED芯片20键合于所述显示背板50上的对应所述焊盘组51上。
本申请又一种实施例提供一种巨量转移方法,具体请参考图21和图22,其中,图21是本申请又一种实施例提供的巨量转移方法的流程图,图22是图21中所示步骤S350的工艺流程示意图。
该实施例提供的巨量转移方法具体包括以下步骤:
S300:检测所述生长基板10上的坏点LED芯片20a。该步骤与上述实施例中的步骤S200相同,不再赘述。
S310:在生长基板10上涂抹绝缘胶材60,使得任意相邻的两个LED芯片20之间均具有所述绝缘胶材60。该步骤与上述实施例中步骤S100相同,不再赘述。
S320:将所述生长基板10设置于显示背板50上方,使得所述生长基板10与所述显示背板50之间的间距大于所述LED芯片20的高度。该步骤与上述实施例中步骤S110相同,不再赘述。
S330:对所述绝缘胶材60进行加热,以将所述绝缘胶材60软化,软化后的所述绝缘胶材60延伸至与所述显示背板50粘接,以在所述生长基板10和所述显示背板50之间形成绝缘胶柱70。该步骤与上述实施例中步骤S120相同,不再赘述。
S340:通过激光剥离法将除了坏点LED芯片20a之外的至少部分LED芯片20与所述生长基板10分离,分离后的所述LED芯片20沿其周围的所述绝缘胶柱70构成的通道下落至对应的焊盘组51上。该步骤与上述实施例中步骤S240相同,不再赘述。
S350:参考图22,补充另一LED芯片20至坏点LED芯片20a对应的焊盘组51处。由此,可以防止坏点LED芯片20a对应的焊盘组51处空缺,使得最终被制备的显示器件上像素比较完整,从而可以提升显示效果。
S360:加热加压所述LED芯片20键合于所述显示背板50上的对应所述焊盘组51上。
具体的,可以采用修补粘板80粘接正常的LED芯片20,然后将该LED芯片20转移至坏点LED芯片20a对应的焊盘组51处。
本领域技术人员需要理解的是,无论上述哪个实施例,最终均需要将LED芯片20与焊盘组51焊接,具体可以采用加热加压的方式将LED芯片20与焊盘组51焊接,从而使得LED芯片20可靠连接,以提升显示器件的质量。
基于上述任意实施例提供的巨量转移方法,参考图26,本申请又一实施例提供一种显示器件,该显示器件具体包括显示背板50和多个LED芯片20,其中LED芯片20采用上述任意实施例提供的巨量转移方法转移至显示背板50上。
本申请实施例还提供一种显示装置,包括驱动电路和本申请任意实施例中所述的LED发光器件,其中LED发光器件和驱动电路电连接。在申请中,该显示装置可以是手机、平板电脑、笔记本电脑等具有显示效果和/或触控效果的显示装置,不作具体地限定。
应当理解的是,本申请的应用不限于上述的举例,对本领域普通技术人员来说,可以根据上述说明加以改进或变换,所有这些改进和变换都应属于本申请所附权利要求的保护范围。
Claims (15)
- 一种巨量转移方法,其特征在于,包括:在生长基板上涂抹绝缘胶材,使得任意相邻的两个LED芯片之间均具有所述绝缘胶材;将所述生长基板设置于显示背板上方,使得所述生长基板与所述显示背板之间的间距大于所述LED芯片的高度;对所述绝缘胶材进行加热,以将所述绝缘胶材软化,软化后的所述绝缘胶材延伸至与所述显示背板粘接,以在所述生长基板和所述显示背板之间形成绝缘胶柱;将所述LED芯片与所述生长基板分离,分离后的所述LED芯片沿其周围的所述绝缘胶柱构成的通道下落至对应的焊盘组上;将所述LED芯片键合于所述显示背板上的对应的所述焊盘组上。
- 根据权利要求1所述的巨量转移方法,其特征在于,使得任意相邻的两个LED芯片之间均具有所述绝缘胶材之后,还使得所述绝缘胶材与相邻的两个所述LED芯片之间具有间隔。
- 根据权利要求1所述的巨量转移方法,其特征在于,在生长基板上涂抹绝缘胶材,具体包括:在所述生长基板上涂抹沿其厚度方向的截面呈两端宽、中间窄的绝缘胶材。
- 根据权利要求3所述的巨量转移方法,其特征在于,在生长基板上涂抹绝缘胶材,使得任意相邻的两个LED芯片之间均具有所述绝缘胶材具体包括:在生长基板上涂抹绝缘胶材,使得任意相邻的两个LED芯片之间均具有截面呈圆形或椭圆形的所述绝缘胶材。
- 根据权利要求1所述的巨量转移方法,其特征在于,在所述生长基板和所述显示背板之间形成绝缘胶柱具体包括:在所述生长基板和所述显示背板之间形成截面呈两端窄、中间宽的形状的绝缘胶柱。
- 根据权利要求5所述的巨量转移方法,其特征在于,在所述生长基板和所述显示背板之间形成绝缘胶柱具体包括:在所述生长基板和所述显示背板之间形成截面呈椭圆形的绝缘胶柱。
- 根据权利要求1所述的巨量转移方法,其特征在于,在所述生长基板和所述显示背板之间形成绝缘胶柱之后,所述绝缘胶柱与相邻的两个所述LED芯片之间具有间隔。
- 根据权利要求1所述的巨量转移方法,其特征在于,使得任意相邻的两个LED芯片之间均具有所述绝缘胶材之后,还使得所述绝缘胶材低于或者平齐于所述LED芯片。
- 根据权利要求1所述的巨量转移方法,其特征在于,在生长基板上涂抹绝缘胶材之前,所述巨量转移方法还包括:在生长基板上任意相邻的两个LED芯片设置第一凹槽;使得任意相邻的两个LED芯片之间均具有所述绝缘胶材之后,还使得至少部分所述绝缘胶材位于所述第一凹槽内。
- 根据权利要求1所述的巨量转移方法,其特征在于,将所述绝缘胶材软化之前,所述巨量转移方法还包括:所述显示背板上相邻的焊盘组之间设置第二凹槽;在所述生长基板和所述显示背板之间形成绝缘胶柱,具体包括:与所述显示背板粘接的至少部分所述绝缘胶材延伸至所述第二凹槽内,以在所述生长基板和所述显示背板之间形成绝缘胶柱。
- 根据权利要求1所述的巨量转移方法,其特征在于,使得所述生长基板与所述显示背板之间的间距大于所述LED芯片的高度,具体包括:使得所述生长基板与所述显示背板之间的间距大于或等于20微米。
- 根据权利要求1至11中任一项所述的巨量转移方法,其特征在于,在生长基板上涂抹绝缘胶材之前,所述巨量转移方法还包括:检测所述生长基板上的坏点LED芯片;将所述LED芯片与所述生长基板分离具体包括:将除了坏点LED芯片之外的至少部分LED芯片与所述生长基板分离。
- 根据权利要求12所述的巨量转移方法,其特征在于,将除了坏点LED芯片之外的至少部分LED芯片与所述生长基板分离之后,所述巨量转移方法还包括:补充另一LED芯片至坏点LED芯片对应的焊盘组处。
- 一种LED显示器件,其特征在于,包括显示背板和多个LED芯片,多个所述LED芯片通过权利要求1至13中任一项所述的巨量转移方法转移至所述显示背板上。
- 一种显示装置,其特征在于,包括驱动电路、权利要求14所述的LED显示器件,所述LED显示器件与所述驱动电路电连接。
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CN110993749A (zh) * | 2019-12-09 | 2020-04-10 | 深圳市华星光电半导体显示技术有限公司 | 微型发光二极管的巨量转移方法及显示面板 |
US20210066243A1 (en) * | 2019-09-03 | 2021-03-04 | Samsung Electronics Co., Ltd. | Micro led display and method for manufacturing the same |
CN112968105A (zh) * | 2020-04-24 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | 一种Micro LED芯片巨量转移方法及一种显示背板 |
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US20180240932A1 (en) * | 2017-02-21 | 2018-08-23 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Transfer printing template and transfer printing device of micro light-emitting diode |
US20210066243A1 (en) * | 2019-09-03 | 2021-03-04 | Samsung Electronics Co., Ltd. | Micro led display and method for manufacturing the same |
CN110993749A (zh) * | 2019-12-09 | 2020-04-10 | 深圳市华星光电半导体显示技术有限公司 | 微型发光二极管的巨量转移方法及显示面板 |
CN112968105A (zh) * | 2020-04-24 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | 一种Micro LED芯片巨量转移方法及一种显示背板 |
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