WO2023007543A1 - Ball array mask and manufacturing method for ball array mask - Google Patents

Ball array mask and manufacturing method for ball array mask Download PDF

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Publication number
WO2023007543A1
WO2023007543A1 PCT/JP2021/027525 JP2021027525W WO2023007543A1 WO 2023007543 A1 WO2023007543 A1 WO 2023007543A1 JP 2021027525 W JP2021027525 W JP 2021027525W WO 2023007543 A1 WO2023007543 A1 WO 2023007543A1
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WO
WIPO (PCT)
Prior art keywords
plating
layer
ball array
array mask
resist
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PCT/JP2021/027525
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French (fr)
Japanese (ja)
Inventor
聡丈 小田
正心 飯島
Original Assignee
株式会社ボンマーク
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 株式会社ボンマーク filed Critical 株式会社ボンマーク
Priority to PCT/JP2021/027525 priority Critical patent/WO2023007543A1/en
Priority to CN202180100886.5A priority patent/CN117693808A/en
Priority to TW110134018A priority patent/TWI803974B/en
Publication of WO2023007543A1 publication Critical patent/WO2023007543A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation

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  • the present disclosure relates to a ball array mask and a method for manufacturing the ball array mask.
  • Patent Document 1 describes a mask for arranging conductive balls on an electronic circuit board.
  • the mask is formed with an opening pattern for arranging the conductive balls on the electrode portion of the substrate.
  • the opening pattern includes a large number of through holes.
  • the surface of the electrode part is pre-applied with flux at the positions where the conductive balls are to be mounted. be done.
  • recesses for avoiding the flux are formed on the surface of the mask that is in contact with the object to be mounted. A large number of through-holes serving as an opening pattern are provided in the recess.
  • FIG. 14 is a diagram for explaining a method of manufacturing a conventional ball array mask.
  • FIG. 14 corresponds to a diagram showing a state in which a second electroformed layer is formed from the state shown in FIG. 9A(e) of Patent Document 1.
  • FIG. 14 is a diagram for explaining a method of manufacturing a conventional ball array mask.
  • FIG. 14 corresponds to a diagram showing a state in which a second electroformed layer is formed from the state shown in FIG. 9A(e) of Patent Document 1.
  • the recesses for avoiding flux are formed by electrodepositing metal on the surface after forming a resist on the surface of the first electroformed layer. At this time, the current density is high at the edge of the recess, that is, the portion indicated by the arrow D in FIG.
  • the value of the difference t1 increases as the thickness of the second electroformed layer increases. Therefore, there is a problem that the precision of the plate thickness is deteriorated.
  • An object of the present disclosure is to provide a ball array mask capable of improving accuracy of plate thickness. Another object of the present disclosure is to provide a method for manufacturing such a ball array mask.
  • a ball array mask includes a metal layer having recesses formed on its first surface, and a film layer provided on the first surface of the metal layer so as not to block the recesses.
  • An opening pattern for arranging the conductive balls is formed in the metal layer. The through holes included in the opening pattern penetrate the bottom surface of the recess.
  • a ball array mask according to the present disclosure is provided on a first plating layer having an opening pattern for arranging conductive balls, and a first plating surface of the first plating layer so as not to block the opening pattern. and a film layer provided on the second plating surface of the second plating layer.
  • the second plated surface faces in the same direction as the first plated surface. Through-holes included in the opening pattern penetrate at the first plating surface.
  • a method for manufacturing a ball array mask includes a first step of forming a first resist corresponding to an opening pattern on a base material, and after the first step, plating the base material to form a first plating layer. a second step of forming; after the second step, a third step of forming a second resist on the first plating surface of the first plating layer so as to block the through holes formed in the first plating layer by the first resist; a fourth step of forming a second plating layer on the first plating surface by plating the first plating surface after the third step; A fifth step of laminating a film on the second plating surface of the second plating layer so as to close the formed opening, and a sixth step of removing a portion of the film that closes the opening after the fifth step. Prepare.
  • FIG. 4 is a diagram for explaining a ball array mask according to Embodiment 1;
  • FIG. It is the top view which expanded the A section of FIG. 3 is a view showing a BB cross section of a portion of the ball array mask shown in FIG. 2 where opening patterns and recesses are formed;
  • FIG. 3 is a view showing a CC cross section of a portion of the ball array mask shown in FIG. 2 where recognition marks are formed;
  • FIG. 4 is a flow chart showing an example of a method for manufacturing a ball array mask according to Embodiment 1.
  • FIG. It is a figure for demonstrating the manufacturing method of a ball array mask. It is a figure for demonstrating the manufacturing method of a ball array mask. It is a figure for demonstrating the manufacturing method of a ball array mask.
  • FIG. 10 is a diagram showing another example of a ball array mask
  • FIG. 10 is a diagram showing another example of a ball array mask
  • 8 is a flow chart showing another example of a method for manufacturing a ball array mask
  • It is a figure for demonstrating the manufacturing method of a ball array mask.
  • It is a figure for demonstrating the manufacturing method of a ball array mask.
  • It is a figure for demonstrating the manufacturing method of the conventional ball array mask.
  • FIG. 1 is a diagram for explaining a ball array mask 1 according to Embodiment 1.
  • FIG. A ball array mask 1 is provided on a frame 3 via a gauze 2.
  • the gauze 2 is arranged around the ball array mask 1.
  • - ⁇ Tension is applied to the ball array mask 1 by the gauze 2 .
  • FIG. 2 is an enlarged plan view of part A in FIG.
  • FIG. 3 is a view showing a BB cross section of the portion of the ball array mask 1 shown in FIG. 2 where the opening pattern 11 and the concave portion 6 are formed.
  • the ball array mask 1 is used to array conductive balls on the electrode portion of the object to be mounted.
  • Mounted objects include electronic circuit boards, semiconductor wafers, and the like.
  • the substrate 4 and the flux 5 applied to the electrode portions of the substrate 4 are indicated by dashed lines in order to represent the state of the ball array mask 1 in use.
  • the ball array mask 1 has recesses 6 for avoiding the flux 5 on the surface facing the substrate 4 .
  • 2 and 3 show one recess 6 formed in the ball array mask 1.
  • FIG. A large number of recesses 6 as shown in FIGS. 2 and 3 may be formed in the ball array mask 1 .
  • the ball array mask 1 comprises a first plating layer 10, a second plating layer 20 and a film layer 30. As shown in FIG.
  • the first plating layer 10 is formed by plating.
  • An opening pattern 11 for arranging conductive balls on the electrode portion of the substrate 4 is formed in the first plating layer 10 .
  • the opening pattern 11 includes many through holes 12 .
  • the through holes 12 penetrate through the first plating surface 10 a and the first plating surface 10 b of the first plating layer 10 .
  • the first plating surface 10a faces the same direction as the substrate surface 4a of the substrate 4 when the conductive balls are arranged on the electrode portion of the substrate 4.
  • the first plating surface 10b faces in a direction opposite to the direction in which the first plating surface 10a faces.
  • the first plating surface 10b faces the substrate surface 4a when arranging the conductive balls on the electrode portion of the substrate 4.
  • a substrate surface 4a of the substrate 4 is a surface on which conductive balls are mounted.
  • the second plating layer 20 is formed by plating.
  • the second plating layer 20 is provided on the first plating surface 10 b of the first plating layer 10 .
  • the second plating layer 20 may be formed integrally with the first plating layer 10 .
  • the second plating layer 20 is formed so as not to block the opening pattern 11 .
  • 2 and 3 show a preferred example in which the second plating layer 20 is provided on the first plating surface 10b so as to surround the opening pattern 11. FIG.
  • the film layer 30 is formed from a film.
  • a film is formed by molding a resin into a thin film.
  • the film layer 30 is formed from a dry film such as resist.
  • the film layer 30 is provided on the second plating surface 20 a of the second plating layer 20 .
  • the second plating surface 20a faces in the same direction as the first plating surface 10b faces.
  • 2 and 3 show a preferred example in which the film layer 30 is provided on the second plating surface 20a so as to surround the opening pattern 11.
  • the film layer 30 is provided within an area of the second plating surface 20a such that it does not protrude beyond the second plating surface 20a.
  • the edge of the film layer 30 is preferably positioned about 10-20 ⁇ m inward from the edge of the second plating surface 20a. In the example shown in this embodiment, the thickness of the film layer 30 is greater than the thickness of the second plating layer 20 .
  • FIG. 4 is a view showing a CC cross section of a portion of the ball array mask 1 shown in FIG. 2 where the recognition marks 21 are formed.
  • a recognition mark 21 is formed on the second plating layer 20 .
  • the recognition marks 21 are used to align the ball array mask 1 and the substrate 4 when arranging the conductive balls on the electrode portions of the substrate 4 .
  • the recognition marks 21 are preferably formed by electrolytic processing. As an example, the recognition marks 21 are formed on the second plating surface 20a by electrolytic marking using an AC power source.
  • the film layer 30 is not provided on the portion of the second plating surface 20a where the recognition mark 21 is formed. That is, the fiducial marks 21 are not covered by the film layer 30 .
  • a film layer 30 is provided on the second plating surface 20 a so as to surround the periphery of the recognition mark 21 .
  • FIG. 5 is a flow chart showing an example of a method for manufacturing the ball array mask 1 according to the first embodiment.
  • 6 to 8 are diagrams for explaining the method of manufacturing the ball array mask 1.
  • FIG. 5 is a flow chart showing an example of a method for manufacturing the ball array mask 1 according to the first embodiment.
  • a first step of forming a first resist 42 corresponding to the opening pattern 11 is performed. Specifically, in the first step, first, a conductive base material 40 is prepared as shown in FIG. 6(a). Next, as shown in FIG. 6B, a dry film resist 41 is laminated on the surface 40a of the base material 40. Next, as shown in FIG. Next, as shown in FIG. 6C, the portion of the dry film resist 41 corresponding to the opening pattern 11 is exposed and then developed. As a result, a first resist 42 corresponding to the opening pattern 11 is formed on the surface 40a of the base material 40, as shown in FIG. 6(d). Although the dry film resist 41 is used in this example, a liquid resist may be used instead of the dry film resist 41 .
  • the second step of forming the first plated layer 10, which is the first plated layer, is performed.
  • the surface 40a of the base material 40 is plated by a plating method. If the electroforming method is adopted as the plating method, metal is electrodeposited on the surface 40a of the base material 40 in the second step.
  • the first plated layer 10 is formed on the surface 40a, as shown in FIG. 6(e). No metal is electrodeposited on the portion of the surface 40a where the first resist 42 exists.
  • a through hole 12 is formed in the first plating layer 10 by a first resist 42 . The through hole 12 penetrates the first plating surface 10 a and the first plating surface 10 b of the first plating layer 10 .
  • a third step of forming a second resist 43 for forming part of the recess 6 is performed. Specifically, in the third step, first, a dry film resist 44 is laminated on the first plating surface 10b of the first plating layer 10, as shown in FIG. 7(a). Next, as shown in FIG. 7B, the portions of the dry film resist 44 corresponding to the recesses 6 are exposed and then developed. As a result, as shown in FIG. 7C, a second resist 43 is formed on the first plating surface 10b of the first plating layer 10 so as to block the through holes 12 formed in the first plating layer 10. .
  • the dry film resist 44 is used in this example, a liquid resist may be used instead of the dry film resist 44 .
  • the fourth step of forming the second plated layer 20, which is the second plated layer is performed. Specifically, in the fourth step, plating is performed on the first plating surface 10b of the first plating layer 10 by a plating method. If the electroforming method is employed as the plating method, metal is electrodeposited on the first plating surface 10b of the first plating layer 10 in the fourth step. As a result, the second plating layer 20 is formed on the first plating surface 10b, as shown in FIG. 7(d). No metal is electrodeposited on the portion of the first plating surface 10b where the second resist 43 exists. In the example shown in the present embodiment, second plating layer 20 is laminated so as to surround through hole 12 formed in first plating layer 10 by first resist 42 .
  • the first resist 42 and the second resist 43 are removed using a remover (S105).
  • the first resist 42 may be removed before the third step, but it is more efficient and desirable to remove the first resist 42 after the fourth step.
  • the fifth step of laminating the film is performed.
  • a dry film resist 31 is laminated on the second plating surface 20a of the second plating layer 20, as shown in FIG. 8(a).
  • the dry film resist 31 is provided on the entire second plating surface 20 a so as to close the openings (plating recesses) formed in the second plating layer 20 by the second resist 43 .
  • the sixth step of removing unnecessary portions of the dry film resist 31 is performed. Specifically, in the sixth step, as shown in FIG. 8B, portions of the dry film resist 31 other than the portions corresponding to the recesses 6 are exposed and then developed. As a result, as shown in FIG. 8(c), the portion of the dry film resist 31 that was provided so as to block the opening of the second plating layer 20 is removed. The portion of the dry film resist 31 that remains on the second plating surface 20 a is the film layer 30 .
  • the first plating layer 10 is separated from the base material 40. Thereby, the ball array mask 1 as shown in FIGS. 2 and 3 can be obtained.
  • the inner wall of the recess 6 is formed by both the second plated layer 20 and the film layer 30 . It is not necessary to form the entire inner wall of the recess 6 only with the second plating layer 20 . Therefore, the thickness of the second plated layer 20 required for forming the concave portion 6 can be made thinner than in the conventional case where all the plated layers are formed. If the thickness of the second plating layer 20 is thin, the value corresponding to the difference t1 shown in FIG. 9 also becomes small. Therefore, the precision of the plate thickness of the ball array mask 1 can be improved.
  • the dry film resist 31 that becomes the film layer 30 after being developed in S107 preferably has high solvent resistance in consideration of the environment in which the ball array mask 1 is used. For example, it is required that the film layer 30 does not easily peel off from the second plating layer 20 even when the ball array mask 1 is washed with an alkaline washing solution.
  • dry film resists 31 that satisfy such conditions, those that can be obtained at a relatively low cost have their thicknesses determined by standards. Therefore, if it is attempted to form the inner walls of the recesses 6 only with the film layer 30, it may not be possible to realize the recesses 6 having a depth corresponding to the design value desired by the customer. For example, consider the case where dry film resist 31 with thicknesses of 25 ⁇ m, 30 ⁇ m and 50 ⁇ m can be used.
  • the film layer 30 alone cannot form the recesses 6 with a depth of 40 ⁇ m.
  • a part of the inner wall of the recess 6 is formed by the second plating layer 20 of the second stage, so the depth of the recess 6 is set to the value desired by the customer. can be set to Furthermore, since a part of the inner wall of the recess 6 is formed by the film layer 30, compared to the case where the inner wall of the recess 6 is formed only by the second plating layer 20, the uniformity of the ball array mask 1 is improved. Thickness accuracy can be improved.
  • the thickness of the dry film resist 31 laminated on the second plating surface 20a of the second plating layer 20 in the fifth step is preferably thicker than the thickness of the second plating layer 20 .
  • the thickness of the second plating layer 20 can be made thinner (smaller) than the thickness of the film layer 30 .
  • the thickness of the second plating layer 20 is preferably 20 ⁇ m or less.
  • the opening pattern 11 may be formed in each recess 6, or the opening pattern 11 may not be formed in some of the recesses 6. Further, when a large number of recesses 6 are formed in the ball array mask 1, the adjacent recesses 6 are separated from each other by grooves in order to allow air to escape or to control the loosening and distortion of the opening pattern 11 by the tension of the gauze 2. It is okay to be connected.
  • 9 and 10 are diagrams showing other examples of the ball array mask 1, respectively. 9 and 10 show an example in which a plurality of recesses 6 are connected via linear grooves 32. FIG. In the example shown in FIG. 9 and the example shown in FIG. 10 , since the recesses 6 are connected via the grooves 32 , the periphery of the opening pattern 11 is not completely surrounded by the second plating layer 20 .
  • part of the portion covering the second plating surface 20a of the second plating layer 20 is also not exposed.
  • the part is a part corresponding to the recognition mark 21 .
  • a seventh step of forming a recognition mark 21 for alignment is performed. Specifically, in the seventh step, of the second plating surface 20a of the second plating layer 20, the portion exposed by removing the part of the dry film resist 31 in the sixth step (hereinafter referred to as “second plating A recognition mark 21 is formed on the exposed portion of the surface 20a).
  • the recognition mark 21 is formed by electrolytic marking
  • an electrode (not shown) and the exposed portion of the second plating surface 20a are immersed in an electrolytic solution, and the electrode and the second plating layer 20 are connected to an AC power supply (not shown). do.
  • the second plating layer 20 side becomes the anode
  • metal ions are dissolved into the electrolytic solution from the exposed portion of the second plating surface 20a.
  • the metal ions dissolved in the electrolytic solution react with OH groups in the electrolytic solution and change to a dark color.
  • the metal ions discolored in the electrolytic solution return to the second plating layer 20 and are electrodeposited.
  • the exposed portion of the second plating surface 20a is coated with a darker color than the other portions. That is, this film becomes the recognition mark 21 .
  • the process of forming the film layer 30 and the process of forming the recognition mark 21 can be performed simultaneously. That is, it is not necessary to perform lamination processing, exposure processing, and development processing only to form the recognition mark 21 . In other words, if the recognition marks 21 are formed on the second plating layer 20 , it is not necessary to perform the lamination process, the exposure process, and the development process only for forming the film layer 30 . Therefore, the workload does not significantly increase as compared with the conventional manufacturing method.
  • Electroforming is an example of a plating method.
  • the plating layer corresponding to the first plating layer 10 and the plating layer corresponding to the second plating layer 20 may be formed by a plating method other than electroplating, such as an electroless plating method.
  • the plate thickness accuracy can be improved more than when forming a metal layer by electroforming, but the speed of forming the metal layer is slower.
  • the thickness of the metal layer can be reduced by utilizing the dry film resist 31 . Therefore, it is possible to shorten the time required to form the metal layer, and prevent deterioration of production efficiency even when the electroless plating method is employed.
  • FIG. 11 is a flow chart showing another example of the method for manufacturing the ball array mask 1.
  • FIG. 12 and 13 are diagrams for explaining the method of manufacturing the ball array mask 1.
  • FIG. In the following, a metal layer corresponding to the total thickness of the first plating layer 10 and the second plating layer 20 is formed without performing two-stage plating, and the metal layer is etched with an etchant containing ferric chloride or the like. is corroded to form the concave portion 6 will be described.
  • a first step of forming a first resist 42 corresponding to the opening pattern 11 is performed.
  • the first step shown in S201 is the same as the first step shown in S101.
  • the second step of forming the metal layer 50 is performed in S202. Formation of the metal layer 50 is performed by a plating method. Also in this example, a liquid resist may be used instead of the dry film resist 41 .
  • the surface 40a of the base material 40 is plated by a plating method. If the electroforming method is adopted as the plating method, metal is electrodeposited on the surface 40a of the base material 40 in the second step. As a result, a metal layer 50 is formed on the surface 40a, as shown in FIG. 12(a). No metal is electrodeposited on the portion of the surface 40a where the first resist 42 exists. Through holes 12 are formed in the metal layer 50 by the first resist 42 .
  • the thickness of the metal layer 50 corresponds to the sum of the thickness of the first plating layer 10 and the thickness of the second plating layer 20 described above. That is, the surface 50a of the metal layer 50 is a surface corresponding to the first plating surface 10a.
  • a surface 50b of the metal layer 50 is a surface corresponding to the second plating surface 20a.
  • a third step of forming a third resist 45 for forming part of the recess 6 is performed. Specifically, in the third step, first, a dry film resist 46 is laminated on the surface 50b of the metal layer 50, as shown in FIG. 12(b). Next, as shown in FIG. 12(c), the dry film resist 46 other than the portion corresponding to the concave portion 6 is exposed and then developed. As a result, as shown in FIG. 12D, the third resist 45 is formed on the surface 50b of the metal layer 50 so as to surround the through hole 12 formed in the metal layer 50 by the first resist 42. .
  • the fourth step of forming recesses 6a in the surface 50b of the metal layer 50 is performed.
  • the recess 6 a eventually becomes part of the recess 6 .
  • the metal layer 50 is corroded by half-etching.
  • recesses 6a are formed in portions of the surface 50b that are not covered with the third resist 45.
  • FIG. A depth d ⁇ b>1 from the surface 50 b of the recess 6 a corresponds to the thickness of the second plating layer 20 .
  • the through holes 12 formed in the metal layer 50 by the first resist 42 are opened at the surface 50a and the bottom surfaces 6b of the recesses 6a.
  • the bottom surface 6 b is a surface that serves as the bottom surface of the recess 6 .
  • the bottom surface 6 b corresponds to the first plating surface 10 b of the first plating layer 10 .
  • the first resist 42 and the third resist 45 are removed using a remover (S205). Thereby, a configuration substantially similar to the configuration shown in FIG. 7(e) can be obtained.
  • the fifth step of laminating the dry film resist 31 is performed.
  • the fifth step shown in S206 is the same as the fifth step shown in S106.
  • the sixth step of removing unnecessary portions of the dry film resist 31 is performed.
  • the sixth step shown in S207 is the same as the sixth step shown in S107.
  • the film layer 30 can be provided on the surface 50b of the metal layer 50 so as not to block the recess 6a.
  • FIG. 13(c) shows a state in which the film layer 30 is provided on the surface 50b of the metal layer 50.
  • FIG. FIG. 13(c) corresponds to FIG. 8(c).
  • the first plating layer 10 and the second plating layer 20 are examples of the metal layer 50 described above. Therefore, even in the example in which the recesses 6a are formed by etching, the same effects as those in the above example in which the first plating layer 10 and the second plating layer 20 are formed by the plating method can be obtained. That is, the inner wall of the recess 6 is formed by both the metal layer 50 and the film layer 30 . Since a part of the concave portion 6 can be formed by the film layer 30 with high thickness accuracy, the metal layer 50, which tends to have variations in thickness accuracy, can be made thinner. Thereby, the precision of the plate thickness of the ball array mask 1 can be improved.
  • the thickness accuracy of the film layer 30 is high, variations in the depth of the recesses 6 mainly depend on variations in the depth of the recesses 6a.
  • the recesses 6a are formed by etching, the deeper the recesses 6a, the greater the variation.
  • the amount of corrosion of the metal layer 50 by the etchant that is, the depth of the recess 6a can be reduced. Therefore, in this example, the accuracy of the concave portion 6 can be improved.
  • the depth d1 from the surface 50b of the recess 6a is preferably smaller than the thickness of the film layer 30.
  • the recognition marks 21 may be formed on the surface 50b of the metal layer 50 by the same method as described above.
  • the recognition marks 21 are formed on the surface 50b by electrolytic marking using an AC power supply.
  • the film layer 30 is provided on the surface 50 b so as to surround the recognition mark 21 .
  • film layer 30 may be formed from a liquid resist.
  • a liquid resist is applied to the second plating surface 20a of the second plating layer 20 in S106.
  • the surface 50b of the metal layer 50 is coated with a liquid resist.
  • the present disclosure can be applied to a mask for arranging conductive balls on the electrode part of the object to be mounted.

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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

A ball array mask (1) comprises a first plated layer (10), a second plated layer (20), and a film layer (30), for example. The first plated layer (10) has formed therein an opening pattern (11) for arraying electroconductive balls. The second plated layer (20) is provided on a first plating surface (10b) of the first plated layer (10). The film layer (30) is provided on a second plating surface (20a) of the second plated layer (20). The second plating surface (20a) faces the same direction as the first plating surface (10b). Through-holes (12) included in the opening pattern (11) penetrate the first plating surface (10b).

Description

ボール配列マスク及びボール配列マスクの製造方法BALL ARRAY MASK AND MANUFACTURING METHOD OF BALL ARRAY MASK
　本開示は、ボール配列マスクとボール配列マスクの製造方法に関する。 The present disclosure relates to a ball array mask and a method for manufacturing the ball array mask.
　特許文献１に、電子回路基板に導電性ボールを配列するためのマスクが記載されている。当該マスクには、基板の電極部に導電性ボールを配列するための開口パターンが形成される。開口パターンには、多数の貫通孔が含まれる。 Patent Document 1 describes a mask for arranging conductive balls on an electronic circuit board. The mask is formed with an opening pattern for arranging the conductive balls on the electrode portion of the substrate. The opening pattern includes a large number of through holes.
　このようなマスクを用いて電子回路基板や半導体ウェハー等の被搭載物の電極部に導電性ボールを配列する場合、電極部の表面には、導電性ボールが搭載される位置にフラックスが予め塗布される。導電性ボールを配列する際にフラックスがマスクに付着することを防止するため、被搭載物と接する側のマスクの表面には、フラックスを避けるための凹部が形成される。開口パターンとなる多数の貫通孔は、当該凹部に設けられる。 When arranging the conductive balls on the electrode part of the object to be mounted such as an electronic circuit board or a semiconductor wafer using such a mask, the surface of the electrode part is pre-applied with flux at the positions where the conductive balls are to be mounted. be done. In order to prevent the flux from adhering to the mask when arranging the conductive balls, recesses for avoiding the flux are formed on the surface of the mask that is in contact with the object to be mounted. A large number of through-holes serving as an opening pattern are provided in the recess.
特開２０１１－１９２７７７号公報JP 2011-192777 A
　特許文献１に記載されたマスクは、電鋳法によって製作される。図１４は、従来のボール配列マスクの製造方法を説明するための図である。図１４は、特許文献１の図９Ａ（ｅ）に示す状態から２段目の電鋳層を形成した状態を示す図に相当する。 The mask described in Patent Document 1 is manufactured by electroforming. FIG. 14 is a diagram for explaining a method of manufacturing a conventional ball array mask. FIG. 14 corresponds to a diagram showing a state in which a second electroformed layer is formed from the state shown in FIG. 9A(e) of Patent Document 1. FIG.
　フラックスを避けるための凹部は、１段目の電鋳層の表面にレジストを形成した後、当該表面に金属を電着させることによって形成される。この時、凹部の縁となる部分、即ち図１４の矢印Ｄで示す部分は電流密度が高くなるため、当該部分の板厚は他の部分の板厚よりも差ｔ１だけ厚くなってしまう。差ｔ１は、２段目の電鋳層の厚さが厚くなればなるほど大きな値になる。このため、板厚の精度が悪化するといった問題があった。 The recesses for avoiding flux are formed by electrodepositing metal on the surface after forming a resist on the surface of the first electroformed layer. At this time, the current density is high at the edge of the recess, that is, the portion indicated by the arrow D in FIG. The value of the difference t1 increases as the thickness of the second electroformed layer increases. Therefore, there is a problem that the precision of the plate thickness is deteriorated.
　本開示は、上述のような課題を解決するためになされた。本開示の目的は、板厚の精度を向上させることができるボール配列マスクを提供することである。本開示の他の目的は、そのようなボール配列マスクを製造するための方法を提供することである。 The present disclosure was made to solve the problems described above. An object of the present disclosure is to provide a ball array mask capable of improving accuracy of plate thickness. Another object of the present disclosure is to provide a method for manufacturing such a ball array mask.
　本開示に係るボール配列マスクは、第１表面に凹部が形成された金属層と、凹部を塞ぐことがないように金属層の第１表面に設けられたフィルム層と、を備える。金属層に、導電性ボールを配列するための開口パターンが形成される。開口パターンに含まれる貫通孔は、凹部の底面で穿通する。 A ball array mask according to the present disclosure includes a metal layer having recesses formed on its first surface, and a film layer provided on the first surface of the metal layer so as not to block the recesses. An opening pattern for arranging the conductive balls is formed in the metal layer. The through holes included in the opening pattern penetrate the bottom surface of the recess.
　本開示に係るボール配列マスクは、導電性ボールを配列するための開口パターンが形成された第１めっき層と、開口パターンを塞ぐことがないように第１めっき層の第１めっき表面に設けられた第２めっき層と、第２めっき層の第２めっき表面に設けられたフィルム層と、を備える。第２めっき表面は、第１めっき表面と同じ方向を向く。開口パターンに含まれる貫通孔は、第１めっき表面で穿通する。 A ball array mask according to the present disclosure is provided on a first plating layer having an opening pattern for arranging conductive balls, and a first plating surface of the first plating layer so as not to block the opening pattern. and a film layer provided on the second plating surface of the second plating layer. The second plated surface faces in the same direction as the first plated surface. Through-holes included in the opening pattern penetrate at the first plating surface.
　本開示に係るボール配列マスクの製造方法は、母材に、開口パターンに対応する第１レジストを形成する第１工程と、第１工程の後、母材にめっきすることによって第１めっき層を形成する第２工程と、第２工程の後、第１レジストによって第１めっき層に形成された貫通孔を塞ぐように、第１めっき層の第１めっき表面に第２レジストを形成する第３工程と、第３工程の後、第１めっき表面にめっきすることによって第１めっき表面に第２めっき層を形成する第４工程と、第４工程の後、第２レジストによって第２めっき層に形成された開口を塞ぐように、第２めっき層の第２めっき表面にフィルムをラミネートする第５工程と、第５工程の後、フィルムのうち開口を塞ぐ部分を除去する第６工程と、を備える。 A method for manufacturing a ball array mask according to the present disclosure includes a first step of forming a first resist corresponding to an opening pattern on a base material, and after the first step, plating the base material to form a first plating layer. a second step of forming; after the second step, a third step of forming a second resist on the first plating surface of the first plating layer so as to block the through holes formed in the first plating layer by the first resist; a fourth step of forming a second plating layer on the first plating surface by plating the first plating surface after the third step; A fifth step of laminating a film on the second plating surface of the second plating layer so as to close the formed opening, and a sixth step of removing a portion of the film that closes the opening after the fifth step. Prepare.
　本開示によれば、ボール配列マスクの板厚の精度を向上させることができる。 According to the present disclosure, it is possible to improve the accuracy of the plate thickness of the ball array mask.
実施の形態１におけるボール配列マスクを説明するための図である。FIG. 4 is a diagram for explaining a ball array mask according to Embodiment 1; FIG. 図１のＡ部を拡大した平面図である。It is the top view which expanded the A section of FIG. 図２に示すボール配列マスクのうち開口パターン及び凹部が形成された部分のＢ－Ｂ断面を示す図である。3 is a view showing a BB cross section of a portion of the ball array mask shown in FIG. 2 where opening patterns and recesses are formed; FIG. 図２に示すボール配列マスクのうち認識マークが形成された部分のＣ－Ｃ断面を示す図である。3 is a view showing a CC cross section of a portion of the ball array mask shown in FIG. 2 where recognition marks are formed; FIG. 実施の形態１におけるボール配列マスクの製造方法の例を示すフローチャートである。4 is a flow chart showing an example of a method for manufacturing a ball array mask according to Embodiment 1. FIG. ボール配列マスクの製造方法を説明するための図である。It is a figure for demonstrating the manufacturing method of a ball array mask. ボール配列マスクの製造方法を説明するための図である。It is a figure for demonstrating the manufacturing method of a ball array mask. ボール配列マスクの製造方法を説明するための図である。It is a figure for demonstrating the manufacturing method of a ball array mask. ボール配列マスクの他の例を示す図である。FIG. 10 is a diagram showing another example of a ball array mask; ボール配列マスクの他の例を示す図である。FIG. 10 is a diagram showing another example of a ball array mask; ボール配列マスクの製造方法の他の例を示すフローチャートである。8 is a flow chart showing another example of a method for manufacturing a ball array mask; ボール配列マスクの製造方法を説明するための図である。It is a figure for demonstrating the manufacturing method of a ball array mask. ボール配列マスクの製造方法を説明するための図である。It is a figure for demonstrating the manufacturing method of a ball array mask. 従来のボール配列マスクの製造方法を説明するための図である。It is a figure for demonstrating the manufacturing method of the conventional ball array mask.
　以下に、図面を参照して詳細な説明を行う。重複する説明は、適宜簡略化或いは省略する。各図において、同一の符号は同一の部分又は相当する部分を示す。 A detailed description is given below with reference to the drawings. Duplicate descriptions are appropriately simplified or omitted. In each figure, the same reference numerals denote the same or corresponding parts.
実施の形態１．
　図１は、実施の形態１におけるボール配列マスク１を説明するための図である。ボール配列マスク１は、紗２を介して枠３に設けられる。紗２は、ボール配列マスク１の周囲に配置される。紗２によってボール配列マスク１に張力が付与される。 Embodiment 1.
FIG. 1 is a diagram for explaining a ball array mask 1 according to Embodiment 1. FIG. A ball array mask 1 is provided on a frame 3 via a gauze 2. - 特許庁The gauze 2 is arranged around the ball array mask 1. - 特許庁Tension is applied to the ball array mask 1 by the gauze 2 .
　図２は、図１のＡ部を拡大した平面図である。図３は、図２に示すボール配列マスク１のうち開口パターン１１及び凹部６が形成された部分のＢ－Ｂ断面を示す図である。ボール配列マスク１は、被搭載物の電極部に導電性ボールを配列するために使用される。被搭載物には、電子回路基板及び半導体ウェハー等が含まれる。図３では、ボール配列マスク１の使用時の状態を表すため、基板４と基板４の電極部に塗布されたフラックス５とを破線で示している。 FIG. 2 is an enlarged plan view of part A in FIG. FIG. 3 is a view showing a BB cross section of the portion of the ball array mask 1 shown in FIG. 2 where the opening pattern 11 and the concave portion 6 are formed. The ball array mask 1 is used to array conductive balls on the electrode portion of the object to be mounted. Mounted objects include electronic circuit boards, semiconductor wafers, and the like. In FIG. 3, the substrate 4 and the flux 5 applied to the electrode portions of the substrate 4 are indicated by dashed lines in order to represent the state of the ball array mask 1 in use.
　ボール配列マスク１には、基板４に対向する表面に、フラックス５を避けるための凹部６が形成される。図２及び図３は、ボール配列マスク１に形成された１つの凹部６を示す。ボール配列マスク１に、図２及び図３に示すような凹部６が多数形成されても良い。ボール配列マスク１は、第１めっき層１０、第２めっき層２０、及びフィルム層３０を備える。 The ball array mask 1 has recesses 6 for avoiding the flux 5 on the surface facing the substrate 4 . 2 and 3 show one recess 6 formed in the ball array mask 1. FIG. A large number of recesses 6 as shown in FIGS. 2 and 3 may be formed in the ball array mask 1 . The ball array mask 1 comprises a first plating layer 10, a second plating layer 20 and a film layer 30. As shown in FIG.
　第１めっき層１０は、めっき法によって形成される。第１めっき層１０に、基板４の電極部に導電性ボールを配列するための開口パターン１１が形成される。開口パターン１１には、多数の貫通孔１２が含まれる。貫通孔１２は、第１めっき層１０の第１めっき表面１０ａ及び第１めっき表面１０ｂで穿通する。第１めっき表面１０ａは、導電性ボールを基板４の電極部に配列する際に基板４の基板表面４ａと同じ方向を向く。第１めっき表面１０ｂは、第１めっき表面１０ａが向く方向とは反対の方向を向く。第１めっき表面１０ｂは、導電性ボールを基板４の電極部に配列する際に基板表面４ａに対面する。基板４の基板表面４ａは、導電性ボールが搭載される面である。 The first plating layer 10 is formed by plating. An opening pattern 11 for arranging conductive balls on the electrode portion of the substrate 4 is formed in the first plating layer 10 . The opening pattern 11 includes many through holes 12 . The through holes 12 penetrate through the first plating surface 10 a and the first plating surface 10 b of the first plating layer 10 . The first plating surface 10a faces the same direction as the substrate surface 4a of the substrate 4 when the conductive balls are arranged on the electrode portion of the substrate 4. As shown in FIG. The first plating surface 10b faces in a direction opposite to the direction in which the first plating surface 10a faces. The first plating surface 10b faces the substrate surface 4a when arranging the conductive balls on the electrode portion of the substrate 4. As shown in FIG. A substrate surface 4a of the substrate 4 is a surface on which conductive balls are mounted.
　第２めっき層２０は、めっき法によって形成される。第２めっき層２０は、第１めっき層１０の第１めっき表面１０ｂに設けられる。第２めっき層２０は、第１めっき層１０と一体的に形成されても良い。第２めっき層２０は、開口パターン１１を塞ぐことがないように形成される。図２及び図３は、第２めっき層２０が開口パターン１１の周囲を囲むように第１めっき表面１０ｂに設けられた好適な例を示す。 The second plating layer 20 is formed by plating. The second plating layer 20 is provided on the first plating surface 10 b of the first plating layer 10 . The second plating layer 20 may be formed integrally with the first plating layer 10 . The second plating layer 20 is formed so as not to block the opening pattern 11 . 2 and 3 show a preferred example in which the second plating layer 20 is provided on the first plating surface 10b so as to surround the opening pattern 11. FIG.
　フィルム層３０は、フィルムから形成される。フィルムは、樹脂を薄い膜に成形したものである。一例として、フィルム層３０は、レジスト等のドライフィルムから形成される。フィルム層３０は、第２めっき層２０の第２めっき表面２０ａに設けられる。第２めっき表面２０ａは、第１めっき表面１０ｂが向く方向と同じ方向を向く。図２及び図３は、フィルム層３０が開口パターン１１の周囲を囲むように第２めっき表面２０ａに設けられた好適な例を示す。更に好適な例では、フィルム層３０は、第２めっき表面２０ａからはみ出ることがないように第２めっき表面２０ａのエリア内に設けられる。フィルム層３０は、その縁が、第２めっき表面２０ａの縁から１０～２０μｍほど内側に配置されることが好ましい。本実施の形態に示す例では、フィルム層３０の厚さは、第２めっき層２０の厚さより大きい。 The film layer 30 is formed from a film. A film is formed by molding a resin into a thin film. As an example, the film layer 30 is formed from a dry film such as resist. The film layer 30 is provided on the second plating surface 20 a of the second plating layer 20 . The second plating surface 20a faces in the same direction as the first plating surface 10b faces. 2 and 3 show a preferred example in which the film layer 30 is provided on the second plating surface 20a so as to surround the opening pattern 11. FIG. In a more preferred example, the film layer 30 is provided within an area of the second plating surface 20a such that it does not protrude beyond the second plating surface 20a. The edge of the film layer 30 is preferably positioned about 10-20 μm inward from the edge of the second plating surface 20a. In the example shown in this embodiment, the thickness of the film layer 30 is greater than the thickness of the second plating layer 20 .
　図４は、図２に示すボール配列マスク１のうち認識マーク２１が形成された部分のＣ－Ｃ断面を示す図である。第２めっき層２０に、認識マーク２１が形成される。認識マーク２１は、導電性ボールを基板４の電極部に配列する際にボール配列マスク１と基板４とを位置合わせするために用いられる。認識マーク２１は、電解処理によって形成されることが好ましい。一例として、認識マーク２１は、交流電源による電解マーキングによって第２めっき表面２０ａに形成される。第２めっき表面２０ａのうち、認識マーク２１が形成された部分に、フィルム層３０は設けられていない。即ち、認識マーク２１は、フィルム層３０によって覆われていない。フィルム層３０は、認識マーク２１の周囲を囲むように第２めっき表面２０ａに設けられる。 FIG. 4 is a view showing a CC cross section of a portion of the ball array mask 1 shown in FIG. 2 where the recognition marks 21 are formed. A recognition mark 21 is formed on the second plating layer 20 . The recognition marks 21 are used to align the ball array mask 1 and the substrate 4 when arranging the conductive balls on the electrode portions of the substrate 4 . The recognition marks 21 are preferably formed by electrolytic processing. As an example, the recognition marks 21 are formed on the second plating surface 20a by electrolytic marking using an AC power source. The film layer 30 is not provided on the portion of the second plating surface 20a where the recognition mark 21 is formed. That is, the fiducial marks 21 are not covered by the film layer 30 . A film layer 30 is provided on the second plating surface 20 a so as to surround the periphery of the recognition mark 21 .
　次に、図５から図８も参照し、ボール配列マスク１を製造する方法について説明する。図５は、実施の形態１におけるボール配列マスク１の製造方法の例を示すフローチャートである。図６から図８は、ボール配列マスク１の製造方法を説明するための図である。 Next, a method for manufacturing the ball array mask 1 will be described with reference to FIGS. 5 to 8 as well. FIG. 5 is a flow chart showing an example of a method for manufacturing the ball array mask 1 according to the first embodiment. 6 to 8 are diagrams for explaining the method of manufacturing the ball array mask 1. FIG.
　先ず、Ｓ１０１において、開口パターン１１に対応する第１レジスト４２を形成する第１工程を行う。具体的に、第１工程では、先ず、図６（ａ）に示すように導電性の母材４０を用意する。次に、図６（ｂ）に示すように、母材４０の表面４０ａに、ドライフィルムレジスト４１をラミネートする。次に、図６（ｃ）に示すように、ドライフィルムレジスト４１のうち開口パターン１１に対応する部分を露光し、その後に現像する。これにより、図６（ｄ）に示すように、開口パターン１１に対応する第１レジスト４２が母材４０の表面４０ａに形成される。なお、この例ではドライフィルムレジスト４１を用いているが、ドライフィルムレジスト４１の代わりに液体レジストを用いても構わない。 First, in S101, a first step of forming a first resist 42 corresponding to the opening pattern 11 is performed. Specifically, in the first step, first, a conductive base material 40 is prepared as shown in FIG. 6(a). Next, as shown in FIG. 6B, a dry film resist 41 is laminated on the surface 40a of the base material 40. Next, as shown in FIG. Next, as shown in FIG. 6C, the portion of the dry film resist 41 corresponding to the opening pattern 11 is exposed and then developed. As a result, a first resist 42 corresponding to the opening pattern 11 is formed on the surface 40a of the base material 40, as shown in FIG. 6(d). Although the dry film resist 41 is used in this example, a liquid resist may be used instead of the dry film resist 41 .
　第１工程の後、Ｓ１０２において、１段目のめっき層である第１めっき層１０を形成する第２工程を行う。具体的に、第２工程では、めっき法によって母材４０の表面４０ａにめっきが行われる。めっき法として電鋳法が採用されていれば、第２工程では、母材４０の表面４０ａに金属が電着される。これにより、図６（ｅ）に示すように、第１めっき層１０が表面４０ａに形成される。表面４０ａのうち、第１レジスト４２が存在する部分に、金属は電着しない。第１めっき層１０には、第１レジスト４２によって貫通孔１２が形成される。貫通孔１２は、第１めっき層１０の第１めっき表面１０ａ及び第１めっき表面１０ｂに貫通する。 After the first step, in S102, the second step of forming the first plated layer 10, which is the first plated layer, is performed. Specifically, in the second step, the surface 40a of the base material 40 is plated by a plating method. If the electroforming method is adopted as the plating method, metal is electrodeposited on the surface 40a of the base material 40 in the second step. As a result, the first plated layer 10 is formed on the surface 40a, as shown in FIG. 6(e). No metal is electrodeposited on the portion of the surface 40a where the first resist 42 exists. A through hole 12 is formed in the first plating layer 10 by a first resist 42 . The through hole 12 penetrates the first plating surface 10 a and the first plating surface 10 b of the first plating layer 10 .
　第２工程の後、Ｓ１０３において、凹部６の一部を形成するための第２レジスト４３を形成する第３工程を行う。具体的に、第３工程では、先ず、図７（ａ）に示すように、第１めっき層１０の第１めっき表面１０ｂに、ドライフィルムレジスト４４をラミネートする。次に、図７（ｂ）に示すように、ドライフィルムレジスト４４のうち凹部６に対応する部分を露光し、その後に現像する。これにより、図７（ｃ）に示すように、第１めっき層１０に形成された貫通孔１２を塞ぐように、第１めっき層１０の第１めっき表面１０ｂに第２レジスト４３が形成される。なお、この例ではドライフィルムレジスト４４を用いているが、ドライフィルムレジスト４４の代わりに液体レジストを用いても構わない。 After the second step, in S103, a third step of forming a second resist 43 for forming part of the recess 6 is performed. Specifically, in the third step, first, a dry film resist 44 is laminated on the first plating surface 10b of the first plating layer 10, as shown in FIG. 7(a). Next, as shown in FIG. 7B, the portions of the dry film resist 44 corresponding to the recesses 6 are exposed and then developed. As a result, as shown in FIG. 7C, a second resist 43 is formed on the first plating surface 10b of the first plating layer 10 so as to block the through holes 12 formed in the first plating layer 10. . Although the dry film resist 44 is used in this example, a liquid resist may be used instead of the dry film resist 44 .
　第３工程の後、Ｓ１０４において、２段目のめっき層である第２めっき層２０を形成する第４工程を行う。具体的に、第４工程では、めっき法によって第１めっき層１０の第１めっき表面１０ｂにめっきが行われる。めっき法として電鋳法が採用されていれば、第４工程では、第１めっき層１０の第１めっき表面１０ｂに金属が電着される。これにより、図７（ｄ）に示すように、第２めっき層２０が第１めっき表面１０ｂに形成される。第１めっき表面１０ｂのうち、第２レジスト４３が存在する部分に、金属は電着しない。本実施の形態に示す例では、第２めっき層２０は、第１レジスト４２によって第１めっき層１０に形成された貫通孔１２の周囲を囲むように積層される。 After the third step, in S104, the fourth step of forming the second plated layer 20, which is the second plated layer, is performed. Specifically, in the fourth step, plating is performed on the first plating surface 10b of the first plating layer 10 by a plating method. If the electroforming method is employed as the plating method, metal is electrodeposited on the first plating surface 10b of the first plating layer 10 in the fourth step. As a result, the second plating layer 20 is formed on the first plating surface 10b, as shown in FIG. 7(d). No metal is electrodeposited on the portion of the first plating surface 10b where the second resist 43 exists. In the example shown in the present embodiment, second plating layer 20 is laminated so as to surround through hole 12 formed in first plating layer 10 by first resist 42 .
　第２めっき層２０を第１めっき表面１０ｂに形成した後、図７（ｅ）に示すように、第１レジスト４２と第２レジスト４３とを剥離液を用いて除去する（Ｓ１０５）。第１レジスト４２の除去は、第３工程の前に行われても良いが、第４工程の後にまとめて除去する方が効率的で望ましい。 After forming the second plating layer 20 on the first plating surface 10b, as shown in FIG. 7(e), the first resist 42 and the second resist 43 are removed using a remover (S105). The first resist 42 may be removed before the third step, but it is more efficient and desirable to remove the first resist 42 after the fourth step.
　第４工程の後、Ｓ１０６において、フィルムをラミネートする第５工程を行う。ここでは、当該フィルムとしてドライフィルムレジスト３１を用いる例について説明する。具体的に、第５工程では、図８（ａ）に示すように、第２めっき層２０の第２めっき表面２０ａにドライフィルムレジスト３１がラミネートされる。ドライフィルムレジスト３１は、第２レジスト４３によって第２めっき層２０に形成された開口（めっき凹部）を塞ぐように、第２めっき表面２０ａの全体に設けられる。 After the fourth step, in S106, the fifth step of laminating the film is performed. Here, an example using a dry film resist 31 as the film will be described. Specifically, in the fifth step, a dry film resist 31 is laminated on the second plating surface 20a of the second plating layer 20, as shown in FIG. 8(a). The dry film resist 31 is provided on the entire second plating surface 20 a so as to close the openings (plating recesses) formed in the second plating layer 20 by the second resist 43 .
　第５工程の後、Ｓ１０７において、ドライフィルムレジスト３１の不要な部分を除去する第６工程を行う。具体的に、第６工程では、図８（ｂ）に示すように、ドライフィルムレジスト３１のうち凹部６に対応する部分以外の部分を露光し、その後に現像する。これにより、図８（ｃ）に示すように、ドライフィルムレジスト３１のうち、第２めっき層２０の当該開口を塞ぐように設けられていた部分が除去される。ドライフィルムレジスト３１のうち、第２めっき表面２０ａに残った部分がフィルム層３０である。 After the fifth step, in S107, the sixth step of removing unnecessary portions of the dry film resist 31 is performed. Specifically, in the sixth step, as shown in FIG. 8B, portions of the dry film resist 31 other than the portions corresponding to the recesses 6 are exposed and then developed. As a result, as shown in FIG. 8(c), the portion of the dry film resist 31 that was provided so as to block the opening of the second plating layer 20 is removed. The portion of the dry film resist 31 that remains on the second plating surface 20 a is the film layer 30 .
　最後に、第１めっき層１０を母材４０から分離する。これにより、図２及び図３に示すようなボール配列マスク１を得ることができる。 Finally, the first plating layer 10 is separated from the base material 40. Thereby, the ball array mask 1 as shown in FIGS. 2 and 3 can be obtained.
　本実施の形態に示す例では、凹部６の内壁が２段目の第２めっき層２０とフィルム層３０との双方によって形成される。凹部６の内壁を第２めっき層２０のみで全て形成する必要がない。このため、凹部６を形成するために必要な２段目の第２めっき層２０の厚さを、従来のように全てめっき層で形成する場合よりも薄くすることができる。第２めっき層２０の厚さが薄ければ、図９に示す差ｔ１に相当する値も小さくなる。このため、ボール配列マスク１の板厚の精度を向上させることができる。 In the example shown in the present embodiment, the inner wall of the recess 6 is formed by both the second plated layer 20 and the film layer 30 . It is not necessary to form the entire inner wall of the recess 6 only with the second plating layer 20 . Therefore, the thickness of the second plated layer 20 required for forming the concave portion 6 can be made thinner than in the conventional case where all the plated layers are formed. If the thickness of the second plating layer 20 is thin, the value corresponding to the difference t1 shown in FIG. 9 also becomes small. Therefore, the precision of the plate thickness of the ball array mask 1 can be improved.
　なお、Ｓ１０７で現像が行われた後にフィルム層３０となるドライフィルムレジスト３１は、ボール配列マスク１の使用環境を考慮すると、耐溶剤性能が高いものであることが好ましい。例えば、ボール配列マスク１がアルカリ性の洗浄液を用いて洗浄された場合であっても、フィルム層３０が第２めっき層２０から容易に剥離しないことが要求される。 It should be noted that the dry film resist 31 that becomes the film layer 30 after being developed in S107 preferably has high solvent resistance in consideration of the environment in which the ball array mask 1 is used. For example, it is required that the film layer 30 does not easily peel off from the second plating layer 20 even when the ball array mask 1 is washed with an alkaline washing solution.
　このような条件を満たすドライフィルムレジスト３１のうち、比較的安価に入手できるものは、その厚さが規格で決まっている。このため、凹部６の内壁をフィルム層３０だけで形成しようとすると、顧客が希望する設計値に応じた深さの凹部６を実現できない場合がある。例えば、厚さが２５μｍ、３０μｍ、及び５０μｍであるドライフィルムレジスト３１を使用できる場合を考える。かかる場合、フィルム層３０のみで凹部６の内壁を形成すると、凹部６の深さは、２５μｍ、３０μｍ、５０μｍ、５５μｍ（＝２５μｍ＋３０μｍ）、７５μｍ（＝２５μｍ＋５０μｍ）等に限定される。フィルム層３０のみでは、深さが４０μｍである凹部６を形成することはできない。 Among the dry film resists 31 that satisfy such conditions, those that can be obtained at a relatively low cost have their thicknesses determined by standards. Therefore, if it is attempted to form the inner walls of the recesses 6 only with the film layer 30, it may not be possible to realize the recesses 6 having a depth corresponding to the design value desired by the customer. For example, consider the case where dry film resist 31 with thicknesses of 25 μm, 30 μm and 50 μm can be used. In this case, if the inner wall of the recess 6 is formed only by the film layer 30, the depth of the recess 6 is limited to 25 μm, 30 μm, 50 μm, 55 μm (=25 μm+30 μm), 75 μm (=25 μm+50 μm), and the like. The film layer 30 alone cannot form the recesses 6 with a depth of 40 μm.
　一方、本実施の形態に示すボール配列マスク１であれば、凹部６の内壁の一部が２段目の第２めっき層２０によって形成されるため、凹部６の深さを顧客が希望する値に設定できる。更に、凹部６の内壁の一部がフィルム層３０によって形成されるため、凹部６の内壁を第２めっき層２０のみで形成する場合と比較して、ボール配列マスク１の均一性を高め、板厚の精度を向上させることができる。なお、フィルム層３０を形成するためのフィルムとしてドライフィルムレジスト３１を用いる例について説明したが、ドライフィルムレジスト３１の代わりに、シルクスクリーン版で使用されている膜厚精度が高い直感フィルム等を用いても良い。 On the other hand, in the case of the ball array mask 1 shown in the present embodiment, a part of the inner wall of the recess 6 is formed by the second plating layer 20 of the second stage, so the depth of the recess 6 is set to the value desired by the customer. can be set to Furthermore, since a part of the inner wall of the recess 6 is formed by the film layer 30, compared to the case where the inner wall of the recess 6 is formed only by the second plating layer 20, the uniformity of the ball array mask 1 is improved. Thickness accuracy can be improved. Although an example of using the dry film resist 31 as the film for forming the film layer 30 has been described, instead of the dry film resist 31, an intuition film or the like with high film thickness precision used in silk screen printing is used. can be
　ボール配列マスク１の板厚の精度を向上させるためには、第２めっき層２０の厚さは薄くする方が良い。このため、第５工程で第２めっき層２０の第２めっき表面２０ａにラミネートされるドライフィルムレジスト３１の厚さは、第２めっき層２０の厚さより厚いことが好ましい。これにより、第２めっき層２０の厚さをフィルム層３０の厚さより薄く（小さく）することができる。具体的には、第２めっき層２０の厚さは２０μｍ以下であることが好ましい。 In order to improve the thickness accuracy of the ball array mask 1, it is better to make the second plating layer 20 thinner. Therefore, the thickness of the dry film resist 31 laminated on the second plating surface 20a of the second plating layer 20 in the fifth step is preferably thicker than the thickness of the second plating layer 20 . Thereby, the thickness of the second plating layer 20 can be made thinner (smaller) than the thickness of the film layer 30 . Specifically, the thickness of the second plating layer 20 is preferably 20 μm or less.
　なお、ボール配列マスク１に多数の凹部６が形成される場合、各凹部６に開口パターン１１が形成されても良いし、一部の凹部６に開口パターン１１が形成されなくても良い。また、ボール配列マスク１に多数の凹部６が形成される場合は、空気逃げのため或いは紗２による張力によって開口パターン１１の弛みや歪みを制御するために、隣接する凹部６が溝を介して繋がれていても良い。図９及び図１０は、それぞれ、ボール配列マスク１の他の例を示す図である。図９及び図１０は、複数の凹部６が直線状の溝３２を介して繋がれる例を示す。図９に示す例及び図１０に示す例では、凹部６が溝３２を介して繋がれているため、開口パターン１１の周囲が第２めっき層２０によって完全に囲まれている訳ではない。 When a large number of recesses 6 are formed in the ball array mask 1, the opening pattern 11 may be formed in each recess 6, or the opening pattern 11 may not be formed in some of the recesses 6. Further, when a large number of recesses 6 are formed in the ball array mask 1, the adjacent recesses 6 are separated from each other by grooves in order to allow air to escape or to control the loosening and distortion of the opening pattern 11 by the tension of the gauze 2. It is okay to be connected. 9 and 10 are diagrams showing other examples of the ball array mask 1, respectively. 9 and 10 show an example in which a plurality of recesses 6 are connected via linear grooves 32. FIG. In the example shown in FIG. 9 and the example shown in FIG. 10 , since the recesses 6 are connected via the grooves 32 , the periphery of the opening pattern 11 is not completely surrounded by the second plating layer 20 .
　次に、認識マーク２１を形成する方法について説明する。以下の説明は、認識マーク２１を形成する方法の一例である。 Next, a method for forming the recognition mark 21 will be described. The following description is an example of a method of forming fiducial marks 21 .
　例えば、第６工程において、凹部６に対応する部分の他に、第２めっき層２０の第２めっき表面２０ａを覆う部分の一部も露光しないようにする。当該一部は、認識マーク２１に対応する部分である。その後に現像を行うことにより、ドライフィルムレジスト３１のうち、凹部６に対応する部分の他に当該一部も除去される。 For example, in the sixth step, in addition to the portion corresponding to the recess 6, part of the portion covering the second plating surface 20a of the second plating layer 20 is also not exposed. The part is a part corresponding to the recognition mark 21 . By developing the dry film resist 31 thereafter, not only the portion corresponding to the concave portion 6 but also the portion of the dry film resist 31 is removed.
　第６工程の後、位置合わせ用の認識マーク２１を形成する第７工程を行う。具体的に、第７工程では、第２めっき層２０の第２めっき表面２０ａのうち、第６工程でドライフィルムレジスト３１の上記一部を除去することによって露出した部分（以下、「第２めっき表面２０ａの露出部分」ともいう）に、認識マーク２１を形成する。 After the sixth step, a seventh step of forming a recognition mark 21 for alignment is performed. Specifically, in the seventh step, of the second plating surface 20a of the second plating layer 20, the portion exposed by removing the part of the dry film resist 31 in the sixth step (hereinafter referred to as “second plating A recognition mark 21 is formed on the exposed portion of the surface 20a).
　認識マーク２１を電解マーキングによって形成する場合は、図示しない電極と第２めっき表面２０ａの露出部分とを電解液に浸し、当該電極と第２めっき層２０とを交流電源（図示せず）に接続する。すると、第２めっき層２０側が陽極となった際に、第２めっき表面２０ａの露出部分から金属イオンが電解液に溶け出す。電解液に溶け出した当該金属イオンは、電解液中でＯＨ基と反応し、濃い色に変化する。そして、極性が切り替わって第２めっき層２０側が陰極になると、電解液中で変色した金属イオンが第２めっき層２０に戻って電着される。これにより、第２めっき表面２０ａの露出部分に、他の部分よりも濃い色の皮膜が形成される。即ち、この皮膜が認識マーク２１となる。 When the recognition mark 21 is formed by electrolytic marking, an electrode (not shown) and the exposed portion of the second plating surface 20a are immersed in an electrolytic solution, and the electrode and the second plating layer 20 are connected to an AC power supply (not shown). do. Then, when the second plating layer 20 side becomes the anode, metal ions are dissolved into the electrolytic solution from the exposed portion of the second plating surface 20a. The metal ions dissolved in the electrolytic solution react with OH groups in the electrolytic solution and change to a dark color. Then, when the polarity is switched and the second plating layer 20 side becomes the cathode, the metal ions discolored in the electrolytic solution return to the second plating layer 20 and are electrodeposited. As a result, the exposed portion of the second plating surface 20a is coated with a darker color than the other portions. That is, this film becomes the recognition mark 21 .
　上述した例では、フィルム層３０を形成する工程と、認識マーク２１を形成する工程とを同時に行うことができる。即ち、認識マーク２１を形成するためだけに、ラミネート処理、露光処理、及び現像処理を行う必要はない。換言すると、第２めっき層２０に認識マーク２１を形成するのであれば、フィルム層３０を形成するためだけに、ラミネート処理、露光処理、及び現像処理を行う必要はない。このため、従来の製造方法と比較して、作業負荷が著しく増えることもない。 In the above example, the process of forming the film layer 30 and the process of forming the recognition mark 21 can be performed simultaneously. That is, it is not necessary to perform lamination processing, exposure processing, and development processing only to form the recognition mark 21 . In other words, if the recognition marks 21 are formed on the second plating layer 20 , it is not necessary to perform the lamination process, the exposure process, and the development process only for forming the film layer 30 . Therefore, the workload does not significantly increase as compared with the conventional manufacturing method.
　本実施の形態では、最も好適な例として、第１めっき層１０及び第２めっき層２０からなる金属層を電鋳法によって形成する例について説明した。電鋳法は、めっき法の一例である。他の例として、無電解めっき法といった電解めっき以外のめっき法によって第１めっき層１０に相当するめっき層と第２めっき層２０に相当するめっき層とを形成しても良い。 In the present embodiment, as the most suitable example, the example in which the metal layer composed of the first plating layer 10 and the second plating layer 20 is formed by electroforming has been described. Electroforming is an example of a plating method. As another example, the plating layer corresponding to the first plating layer 10 and the plating layer corresponding to the second plating layer 20 may be formed by a plating method other than electroplating, such as an electroless plating method.
　なお、無電解めっき法によって金属層を形成する場合は、電鋳法によって金属層を形成する場合よりも板厚精度を向上させることができるものの、金属層を形成する速度は遅くなってしまう。しかし、本実施の形態に示す例であれば、ドライフィルムレジスト３１を活用することによって金属層の厚みを小さくすることができる。したがって、金属層を形成するために必要な時間を短縮することができ、無電解めっき法を採用する場合であっても生産効率が悪化することを防止できる。 When forming a metal layer by electroless plating, the plate thickness accuracy can be improved more than when forming a metal layer by electroforming, but the speed of forming the metal layer is slower. However, in the example shown in this embodiment, the thickness of the metal layer can be reduced by utilizing the dry film resist 31 . Therefore, it is possible to shorten the time required to form the metal layer, and prevent deterioration of production efficiency even when the electroless plating method is employed.
　図１１は、ボール配列マスク１の製造方法の他の例を示すフローチャートである。図１２及び図１３は、ボール配列マスク１の製造方法を説明するための図である。以下においては、２段階のめっきを行わずに、第１めっき層１０と第２めっき層２０との合計の厚みに相当する金属層を形成し、塩化第二鉄等を含むエッチング液によって金属層を腐食させて凹部６を造成する例について説明する。 FIG. 11 is a flow chart showing another example of the method for manufacturing the ball array mask 1. FIG. 12 and 13 are diagrams for explaining the method of manufacturing the ball array mask 1. FIG. In the following, a metal layer corresponding to the total thickness of the first plating layer 10 and the second plating layer 20 is formed without performing two-stage plating, and the metal layer is etched with an etchant containing ferric chloride or the like. is corroded to form the concave portion 6 will be described.
　先ず、Ｓ２０１において、開口パターン１１に対応する第１レジスト４２を形成する第１工程を行う。Ｓ２０１に示す第１工程は、Ｓ１０１に示す第１工程と同様である。第１工程の後、Ｓ２０２において、金属層５０を形成する第２工程を行う。金属層５０の形成は、めっき法によって行われる。この例においても、ドライフィルムレジスト４１の代わりに液体レジストを用いても構わない。 First, in S201, a first step of forming a first resist 42 corresponding to the opening pattern 11 is performed. The first step shown in S201 is the same as the first step shown in S101. After the first step, the second step of forming the metal layer 50 is performed in S202. Formation of the metal layer 50 is performed by a plating method. Also in this example, a liquid resist may be used instead of the dry film resist 41 .
　例えば、第２工程では、めっき法によって母材４０の表面４０ａにめっきが行われる。めっき法として電鋳法が採用されていれば、第２工程では、母材４０の表面４０ａに金属が電着される。これにより、図１２（ａ）に示すように、金属層５０が表面４０ａに形成される。表面４０ａのうち、第１レジスト４２が存在する部分に、金属は電着しない。金属層５０には、第１レジスト４２によって貫通孔１２が形成される。金属層５０の厚さは、先述の第１めっき層１０の厚さと第２めっき層２０の厚さとを合わせた厚さに相当する。即ち、金属層５０の表面５０ａは、第１めっき表面１０ａに相当する表面である。金属層５０の表面５０ｂは、第２めっき表面２０ａに相当する表面である。 For example, in the second step, the surface 40a of the base material 40 is plated by a plating method. If the electroforming method is adopted as the plating method, metal is electrodeposited on the surface 40a of the base material 40 in the second step. As a result, a metal layer 50 is formed on the surface 40a, as shown in FIG. 12(a). No metal is electrodeposited on the portion of the surface 40a where the first resist 42 exists. Through holes 12 are formed in the metal layer 50 by the first resist 42 . The thickness of the metal layer 50 corresponds to the sum of the thickness of the first plating layer 10 and the thickness of the second plating layer 20 described above. That is, the surface 50a of the metal layer 50 is a surface corresponding to the first plating surface 10a. A surface 50b of the metal layer 50 is a surface corresponding to the second plating surface 20a.
　第２工程の後、Ｓ２０３において、凹部６の一部を形成するための第３レジスト４５を形成する第３工程を行う。具体的に、第３工程では、先ず、図１２（ｂ）に示すように、金属層５０の表面５０ｂに、ドライフィルムレジスト４６をラミネートする。次に、図１２（ｃ）に示すように、ドライフィルムレジスト４６のうち凹部６に対応する部分以外を露光し、その後に現像する。これにより、図１２（ｄ）に示すように、第１レジスト４２によって金属層５０に形成された貫通孔１２の周囲を囲むように、金属層５０の表面５０ｂに第３レジスト４５が形成される。 After the second step, in S203, a third step of forming a third resist 45 for forming part of the recess 6 is performed. Specifically, in the third step, first, a dry film resist 46 is laminated on the surface 50b of the metal layer 50, as shown in FIG. 12(b). Next, as shown in FIG. 12(c), the dry film resist 46 other than the portion corresponding to the concave portion 6 is exposed and then developed. As a result, as shown in FIG. 12D, the third resist 45 is formed on the surface 50b of the metal layer 50 so as to surround the through hole 12 formed in the metal layer 50 by the first resist 42. .
　第３工程の後、Ｓ２０４において、金属層５０の表面５０ｂに凹部６ａを形成する第４工程を行う。凹部６ａは、最終的に凹部６の一部となる。 After the third step, in S204, the fourth step of forming recesses 6a in the surface 50b of the metal layer 50 is performed. The recess 6 a eventually becomes part of the recess 6 .
　具体的に、第４工程では、ハーフエッチング処理による金属層５０の腐食を行う。これにより、図１３（ａ）に示すように、表面５０ｂのうち第３レジスト４５によって覆われていない部分に凹部６ａが形成される。凹部６ａの表面５０ｂからの深さｄ１は、第２めっき層２０の厚さに相当する。第４工程で凹部６ａが形成されることにより、第１レジスト４２によって金属層５０に形成された貫通孔１２は、表面５０ａと凹部６ａの底面６ｂとにおいて開口する。底面６ｂは、凹部６の底面となる面である。底面６ｂは、第１めっき層１０の第１めっき表面１０ｂに相当する。 Specifically, in the fourth step, the metal layer 50 is corroded by half-etching. As a result, as shown in FIG. 13A, recesses 6a are formed in portions of the surface 50b that are not covered with the third resist 45. Next, as shown in FIG. A depth d<b>1 from the surface 50 b of the recess 6 a corresponds to the thickness of the second plating layer 20 . By forming the recesses 6a in the fourth step, the through holes 12 formed in the metal layer 50 by the first resist 42 are opened at the surface 50a and the bottom surfaces 6b of the recesses 6a. The bottom surface 6 b is a surface that serves as the bottom surface of the recess 6 . The bottom surface 6 b corresponds to the first plating surface 10 b of the first plating layer 10 .
　金属層５０の表面５０ｂに凹部６ａを形成した後、図１３（ｂ）に示すように、第１レジスト４２と第３レジスト４５とを剥離液を用いて除去する（Ｓ２０５）。これにより、図７（ｅ）に示す構成と実質的に同様の構成を得ることができる。 After forming the recesses 6a on the surface 50b of the metal layer 50, as shown in FIG. 13(b), the first resist 42 and the third resist 45 are removed using a remover (S205). Thereby, a configuration substantially similar to the configuration shown in FIG. 7(e) can be obtained.
　第４工程の後、Ｓ２０６において、ドライフィルムレジスト３１をラミネートする第５工程を行う。Ｓ２０６に示す第５工程は、Ｓ１０６に示す第５工程と同様である。 After the fourth step, in S206, the fifth step of laminating the dry film resist 31 is performed. The fifth step shown in S206 is the same as the fifth step shown in S106.
　第５工程の後、Ｓ２０７において、ドライフィルムレジスト３１の不要な部分を除去する第６工程を行う。Ｓ２０７に示す第６工程は、Ｓ１０７に示す第６工程と同様である。これにより、凹部６ａを塞ぐことがないように金属層５０の表面５０ｂにフィルム層３０を設けることができる。図１３（ｃ）は、金属層５０の表面５０ｂにフィルム層３０が設けられた状態を示す。図１３（ｃ）は、図８（ｃ）に相当する。最後に、金属層５０を母材４０から剥がすことにより、２段階のめっきを行わずにボール配列マスク１を得ることができる。 After the fifth step, in S207, the sixth step of removing unnecessary portions of the dry film resist 31 is performed. The sixth step shown in S207 is the same as the sixth step shown in S107. Thereby, the film layer 30 can be provided on the surface 50b of the metal layer 50 so as not to block the recess 6a. FIG. 13(c) shows a state in which the film layer 30 is provided on the surface 50b of the metal layer 50. FIG. FIG. 13(c) corresponds to FIG. 8(c). Finally, by peeling off the metal layer 50 from the base material 40, the ball array mask 1 can be obtained without performing two-stage plating.
　第１めっき層１０と第２めっき層２０とは、上記金属層５０の一例である。このため、エッチング処理によって凹部６ａを形成する当該例においても、めっき法によって第１めっき層１０及び第２めっき層２０を形成する上記例が奏する効果と同様の効果を奏することができる。即ち、凹部６の内壁は金属層５０とフィルム層３０との双方によって形成される。厚み精度が高いフィルム層３０で凹部６の一部を形成することができるため、厚み精度のばらつきが発生し易い金属層５０を薄くすることができる。これにより、ボール配列マスク１の板厚の精度を向上させることができる。 The first plating layer 10 and the second plating layer 20 are examples of the metal layer 50 described above. Therefore, even in the example in which the recesses 6a are formed by etching, the same effects as those in the above example in which the first plating layer 10 and the second plating layer 20 are formed by the plating method can be obtained. That is, the inner wall of the recess 6 is formed by both the metal layer 50 and the film layer 30 . Since a part of the concave portion 6 can be formed by the film layer 30 with high thickness accuracy, the metal layer 50, which tends to have variations in thickness accuracy, can be made thinner. Thereby, the precision of the plate thickness of the ball array mask 1 can be improved.
　フィルム層３０の厚み精度は高いため、凹部６の深さのばらつきは、凹部６ａの深さのばらつきに主に依存する。エッチング処理によって凹部６ａを形成する場合は、凹部６ａが深くなる程、そのばらつきは大きくなる。フィルム層３０を備える上記例であれば、エッチング液によって金属層５０を腐食する量、即ち凹部６ａの深さを小さくすることができる。したがって、当該例であれば、凹部６の精度を向上させることができる。当該例においても、凹部６ａの表面５０ｂからの深さｄ１は、フィルム層３０の厚さより小さいことが好ましい。 Since the thickness accuracy of the film layer 30 is high, variations in the depth of the recesses 6 mainly depend on variations in the depth of the recesses 6a. When the recesses 6a are formed by etching, the deeper the recesses 6a, the greater the variation. In the above example including the film layer 30, the amount of corrosion of the metal layer 50 by the etchant, that is, the depth of the recess 6a can be reduced. Therefore, in this example, the accuracy of the concave portion 6 can be improved. Also in this example, the depth d1 from the surface 50b of the recess 6a is preferably smaller than the thickness of the film layer 30. FIG.
　また、エッチング処理によって凹部６ａを形成する上記例においても、上述した方法と同様の方法によって、金属層５０の表面５０ｂに認識マーク２１を形成しても良い。例えば、認識マーク２１は、交流電源による電解マーキングによって表面５０ｂに形成される。これにより、フィルム層３０は、認識マーク２１の周囲を囲むように表面５０ｂに設けられる。 Also in the above example in which the recesses 6a are formed by etching, the recognition marks 21 may be formed on the surface 50b of the metal layer 50 by the same method as described above. For example, the recognition marks 21 are formed on the surface 50b by electrolytic marking using an AC power supply. Thereby, the film layer 30 is provided on the surface 50 b so as to surround the recognition mark 21 .
　本実施の形態では、フィルム層３０がフィルムから形成される例について説明した。他の例として、フィルム層３０は液体レジストから形成されても良い。かかる場合、Ｓ１０６において、第２めっき層２０の第２めっき表面２０ａに液体レジストが塗布される。また、Ｓ２０６において、金属層５０の表面５０ｂに液体レジストが塗布される。 In the present embodiment, an example in which the film layer 30 is formed from a film has been described. Alternatively, film layer 30 may be formed from a liquid resist. In such a case, a liquid resist is applied to the second plating surface 20a of the second plating layer 20 in S106. Further, in S206, the surface 50b of the metal layer 50 is coated with a liquid resist.
　本開示は、被搭載物の電極部に導電性ボールを配列するためのマスクに適用できる。 The present disclosure can be applied to a mask for arranging conductive balls on the electrode part of the object to be mounted.
　１　ボール配列マスク、　２　紗、　３　枠、　４　基板、　４ａ　基板表面、　５　フラックス、　６　凹部、　６ａ　凹部、　６ｂ　底面、　１０　第１めっき層、　１０ａ　第１めっき表面、　１０ｂ　第１めっき表面、　１１　開口パターン、　１２　貫通孔、　２０　第２めっき層、　２０ａ　第２めっき表面、　２１　認識マーク、　３０　フィルム層、　３１　ドライフィルムレジスト、　３２　溝、　４０　母材、　４０ａ　表面、　４１　ドライフィルムレジスト、　４２　第１レジスト、　４３　第２レジスト、　４４　ドライフィルムレジスト、　４５　第３レジスト、　４６　ドライフィルムレジスト、　５０　金属層、　５０ａ～５０ｂ　表面 1 Ball array mask 2 Gauze 3 Frame 4 Substrate 4a Substrate surface 5 Flux 6 Recess 6a Recess 6b Bottom 10 First plating layer 10a First plating surface 10b First plating surface 11 Opening Pattern 12 Through hole 20 Second plating layer 20a Second plating surface 21 Recognition mark 30 Film layer 31 Dry film resist 32 Groove 40 Base material 40a Surface 41 Dry film resist 42 First resist , 43 second resist, 44 dry film resist, 45 third resist, 46 dry film resist, 50 metal layer, 50a-50b surface

Claims (7)

  1. 　第１表面に凹部が形成された金属層と、
    　前記凹部を塞ぐことがないように前記金属層の前記第１表面に設けられたフィルム層と、
    を備え、
    　前記金属層に、導電性ボールを配列するための開口パターンが形成され、
    　前記開口パターンに含まれる貫通孔は、前記凹部の底面で穿通するボール配列マスク。     a metal layer having recesses formed on the first surface;
    a film layer provided on the first surface of the metal layer so as not to block the recess;
    with
    an opening pattern for arranging conductive balls is formed in the metal layer;
    A ball array mask in which the through holes included in the opening pattern penetrate through the bottom surface of the recess.
  2. 　前記凹部の前記第１表面からの深さは、前記フィルム層の厚さより小さい請求項１に記載のボール配列マスク。 The ball array mask according to claim 1, wherein the depth of said recesses from said first surface is smaller than the thickness of said film layer.
  3. 　前記金属層に、位置合わせ用の認識マークが形成され、
    　前記フィルム層は、前記認識マークの周囲を囲むように前記第１表面に設けられた請求項１又は請求項２に記載のボール配列マスク。     A recognition mark for alignment is formed on the metal layer,
    3. The ball array mask according to claim 1, wherein the film layer is provided on the first surface so as to surround the recognition marks.
  4. 　導電性ボールを配列するための開口パターンが形成された第１めっき層と、
    　前記開口パターンを塞ぐことがないように前記第１めっき層の第１めっき表面に設けられた第２めっき層と、
    　前記第２めっき層の第２めっき表面に設けられたフィルム層と、
    を備え、
    　前記第２めっき表面は、前記第１めっき表面と同じ方向を向き、
    　前記開口パターンに含まれる貫通孔は、前記第１めっき表面で穿通するボール配列マスク。     a first plating layer having an opening pattern for arranging conductive balls;
    a second plating layer provided on the first plating surface of the first plating layer so as not to block the opening pattern;
    a film layer provided on the second plating surface of the second plating layer;
    with
    the second plated surface faces the same direction as the first plated surface;
    The through-holes included in the opening pattern are ball array masks penetrating on the first plating surface.
  5. 　前記第２めっき層の厚さは、前記フィルム層の厚さより小さい請求項４に記載のボール配列マスク。 The ball array mask according to claim 4, wherein the thickness of the second plating layer is smaller than the thickness of the film layer.
  6. 　前記第２めっき層に、位置合わせ用の認識マークが形成され、
    　前記フィルム層は、前記認識マークの周囲を囲むように前記第２めっき表面に設けられた請求項４又は請求項５に記載のボール配列マスク。     A recognition mark for alignment is formed on the second plating layer,
    6. The ball array mask according to claim 4, wherein the film layer is provided on the second plating surface so as to surround the recognition marks.
  7. 　導電性ボールを配列するための開口パターンを有するボール配列マスクを製造するための方法であって、
    　母材に、前記開口パターンに対応する第１レジストを形成する第１工程と、
    　前記第１工程の後、前記母材にめっきすることによって第１めっき層を形成する第２工程と、
    　前記第２工程の後、前記第１レジストによって前記第１めっき層に形成された貫通孔を塞ぐように、前記第１めっき層の第１めっき表面に第２レジストを形成する第３工程と、
    　前記第３工程の後、前記第１めっき表面にめっきすることによって前記第１めっき表面に第２めっき層を形成する第４工程と、
    　前記第４工程の後、前記第２レジストによって前記第２めっき層に形成された開口を塞ぐように、前記第２めっき層の第２めっき表面にフィルムをラミネートする第５工程と、
    　前記第５工程の後、前記フィルムのうち前記開口を塞ぐ部分を除去する第６工程と、
    を備えたボール配列マスクの製造方法。     A method for manufacturing a ball array mask having a pattern of openings for arranging conductive balls, comprising:
    a first step of forming a first resist corresponding to the opening pattern on the base material;
    After the first step, a second step of forming a first plating layer by plating the base material;
    After the second step, a third step of forming a second resist on the first plating surface of the first plating layer so as to block the through holes formed in the first plating layer by the first resist;
    After the third step, a fourth step of forming a second plating layer on the first plating surface by plating the first plating surface;
    After the fourth step, a fifth step of laminating a film on the second plating surface of the second plating layer so as to close the opening formed in the second plating layer by the second resist;
    After the fifth step, a sixth step of removing a portion of the film that closes the opening;
    A method of manufacturing a ball array mask with
PCT/JP2021/027525 2021-07-26 2021-07-26 Ball array mask and manufacturing method for ball array mask WO2023007543A1 (en)

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Citations (3)

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JP2008186968A (en) * 2007-01-30 2008-08-14 Shibuya Kogyo Co Ltd Ball arrangement mask
JP2008205056A (en) * 2007-02-17 2008-09-04 Kyushu Hitachi Maxell Ltd Mask for arranging solder ball, and manufacturing method for the same
JP2016197766A (en) * 2016-09-02 2016-11-24 日立マクセル株式会社 Mask for arrangement

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JP4512772B2 (en) * 2004-02-23 2010-07-28 株式会社プロセス・ラボ・ミクロン Method for manufacturing conductive ball mounting mask
JP5479959B2 (en) * 2010-03-15 2014-04-23 日本特殊陶業株式会社 Manufacturing method of wiring board having solder bump, mask for mounting solder ball
JP6302430B2 (en) * 2015-06-08 2018-03-28 株式会社ボンマーク Method for manufacturing mask for ball array

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008186968A (en) * 2007-01-30 2008-08-14 Shibuya Kogyo Co Ltd Ball arrangement mask
JP2008205056A (en) * 2007-02-17 2008-09-04 Kyushu Hitachi Maxell Ltd Mask for arranging solder ball, and manufacturing method for the same
JP2016197766A (en) * 2016-09-02 2016-11-24 日立マクセル株式会社 Mask for arrangement

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