WO2022270376A1 - Mounting table and substrate processing device - Google Patents

Mounting table and substrate processing device Download PDF

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Publication number
WO2022270376A1
WO2022270376A1 PCT/JP2022/023935 JP2022023935W WO2022270376A1 WO 2022270376 A1 WO2022270376 A1 WO 2022270376A1 JP 2022023935 W JP2022023935 W JP 2022023935W WO 2022270376 A1 WO2022270376 A1 WO 2022270376A1
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WO
WIPO (PCT)
Prior art keywords
pin member
hole
mounting table
pin
substrate
Prior art date
Application number
PCT/JP2022/023935
Other languages
French (fr)
Japanese (ja)
Inventor
寿文 石田
正嗣 真壁
真克 柏崎
和真 俵
Original Assignee
東京エレクトロン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Publication of WO2022270376A1 publication Critical patent/WO2022270376A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2015—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate the substrate being of crystalline semiconductor material, e.g. lattice adaptation, heteroepitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • the present disclosure relates to a mounting table and a substrate processing apparatus.
  • Patent Document 1 a mounting table on which a substrate is placed is formed with through holes in which lifter pins are arranged, and a lid portion with a wide width is provided at the top of the lifter pins that support the substrate, and the lifter pins are lowered. Then, a technique is disclosed in which the through hole is closed by the cover.
  • the present disclosure provides a technique for facilitating attachment of lifter pins while suppressing the occurrence of abnormal electrical discharge in gaps between through holes and lifter pins.
  • a mounting table includes a mounting section, a first pin member, a second pin member, and a driving section.
  • the placement portion has a first surface on which an object to be supported is placed and a second surface that is the back surface of the first surface, and a through hole penetrating through the first surface and the second surface is formed.
  • the first pin member is arranged in the through hole and is movable in the axial direction of the through hole.
  • the second pin member is arranged on the second surface side of the through hole with respect to the first pin member, and is movable in the axial direction.
  • the drive unit axially drives the second pin member.
  • the first pin member is formed with a lid portion having a widened tip on the first surface side.
  • the through hole has a recess in the opening on the first surface side, which is fitted with the lid when the first pin member is stored in the through hole.
  • FIG. 1 is a diagram showing an example of the configuration of a substrate processing apparatus according to an embodiment.
  • FIG. 2 is a diagram simply showing an example of the configuration of the mounting table according to the embodiment.
  • FIG. 3A is a diagram simply showing an example of the configuration of a first pin member according to the embodiment;
  • FIG. 3B is a diagram simply showing an example of the configuration of the first pin member according to the embodiment;
  • FIG. 3C is a diagram simply showing an example of the configuration of the first pin member according to the embodiment;
  • FIG. 3D is a diagram simply showing an example of the configuration of the first pin member according to the embodiment;
  • FIG. 3E is a diagram simply showing an example of the configuration of the first pin member according to the embodiment;
  • FIG. 3A is a diagram simply showing an example of the configuration of a first pin member according to the embodiment
  • FIG. 3B is a diagram simply showing an example of the configuration of the first pin member according to the embodiment
  • FIG. 3C is a diagram simply showing an example of the
  • FIG. 3F is a diagram simply showing an example of the configuration of the first pin member according to the embodiment
  • FIG. 4 is a diagram simply showing an example of the configuration of the first pin member and the second pin member according to the embodiment.
  • FIG. 5 is a diagram simply showing an example of the configuration of the first pin member and the second pin member according to the embodiment.
  • FIG. 6 is a diagram simply showing an example of the configuration of the first pin member and the second pin member according to the embodiment.
  • 7A is a diagram illustrating an example of the shape of a first pin member according to the embodiment
  • FIG. 7B is a diagram illustrating an example of the shape of the first pin member according to the embodiment
  • FIG. 7C is a diagram illustrating an example of the shape of the first pin member according to the embodiment;
  • FIG. 7A is a diagram illustrating an example of the shape of a first pin member according to the embodiment
  • FIG. 7B is a diagram illustrating an example of the shape of the first pin member according to the embodiment
  • FIG. 7C
  • a substrate processing apparatus in which a substrate is placed on a mounting table provided inside a processing container, and substrate processing such as plasma processing such as etching is performed on the substrate by evacuating the inside of the processing container.
  • substrate processing such as plasma processing such as etching
  • through holes are formed in the mounting table to store the lifter pins, and the lifter pins are lifted to lift the substrate and the ring member arranged around the substrate from the mounting table for loading and unloading.
  • the mounting table may have problems due to the gap between the through hole and the lifter pin. For example, when performing a plasma process, there is a risk of abnormal discharge occurring in the gap. Therefore, in Japanese Patent Laid-Open No. 2002-100000, a cover having a wide width is provided at the top of the lifter pin so that the through hole is closed by the cover when the lifter pin is lowered.
  • the lifter pin When a cover is provided on the top of the lifter pin, the lifter pin can only be inserted into the through hole from the mounting surface side of the mounting table on which the substrate is mounted. As a result, when assembling the mounting table, the lifter pins are inserted into the through holes of the mounting table from the mounting surface side, and then attached to the driving portion for raising and lowering the lifter pins, making it difficult to attach the lifter pins.
  • a technology is expected that facilitates the attachment of the lifter pin while suppressing the occurrence of abnormal discharge in the gap between the through hole and the lifter pin.
  • FIG. 1 is a diagram showing an example of the configuration of a substrate processing apparatus 100 according to an embodiment.
  • the substrate processing apparatus 100 shown in FIG. 1 is, for example, a capacitively coupled plasma (CCP) type plasma etching apparatus that includes parallel plate electrodes.
  • CCP capacitively coupled plasma
  • the substrate processing apparatus 100 includes, for example, a cylindrical processing container 102 made of aluminum whose surface is anodized (anodized).
  • the processing container 102 is grounded.
  • a substantially cylindrical mounting table 110 for mounting a substrate W such as a semiconductor wafer is provided at the bottom of the processing container 102 .
  • the mounting table 110 is supported by an annular insulator 112 made of ceramic or the like.
  • the mounting table 110 includes a temperature adjustment mechanism 117 that can be adjusted to a predetermined temperature.
  • the temperature control mechanism 117 is configured, for example, to circulate a temperature control fluid such as a coolant or a heat transfer gas through a channel 118 provided inside the mounting table 110 .
  • the mounting table 110 has a convex substrate mounting portion 115 for mounting the substrate W on the upper central portion. Further, the mounting table 110 is formed with an outer peripheral portion 116 having a lower upper surface than the substrate placing portion 115 on the outer peripheral side of the substrate placing portion 115 .
  • the upper surface of the substrate mounting portion 115 serves as a first mounting surface 115a on which the substrate W is mounted.
  • the upper surface of the outer peripheral portion 116 serves as a second mounting surface 116a for mounting an edge ring 119 such as a focus ring or a cover ring.
  • the substrate mounting part 115 and the electrostatic chuck 120 are collectively referred to as the "substrate mounting part 115".
  • the electrostatic chuck 120 has a configuration in which an electrode 122 is interposed between insulating materials.
  • a DC voltage of, for example, 1.5 kV is applied to the electrostatic chuck 120 from a DC power source (not shown) connected to the electrode 122 .
  • the substrate W is electrostatically attracted to the electrostatic chuck 120 .
  • the substrate mounting part 115 is formed to have a smaller diameter than the diameter of the substrate W. As shown in FIG. When the substrate W is placed on the substrate placement portion 115 , the peripheral portion of the substrate W protrudes from the substrate placement portion 115 .
  • An edge ring 119 is arranged on the upper peripheral edge of the mounting table 110 so as to surround the substrate W mounted on the first mounting surface 115 a of the electrostatic chuck 120 .
  • the edge ring 119 is placed on the second placement surface 116 a of the outer peripheral portion 116 so that the inner peripheral surface of the edge ring 119 surrounds the outer peripheral surface of the substrate placement portion 115 .
  • the insulator 112, the mounting table 110, and the electrostatic chuck 120 are gas for supplying a heat transfer medium (for example, a backside gas such as He gas) to the rear surface of the substrate W mounted on the first mounting surface 115a. A passage is formed. Heat is transferred between the mounting table 110 and the substrate W through this heat transfer medium, and the substrate W is maintained at a predetermined temperature.
  • a heat transfer medium for example, a backside gas such as He gas
  • a first lifter pin 172 is provided on the mounting table 110 so as to be vertically movable from the first mounting surface 115a. Further, the mounting table 110 is provided with a second lifter pin 182 that can be moved up and down from the second mounting surface 116a.
  • the first lifter pins 172 are driven by a drive unit (not shown) and can lift up the substrate W from the first mounting surface 115a.
  • the second lifter pins 182 are driven by a drive section (not shown) to lift the edge ring 119 from the second mounting surface 116a.
  • An upper electrode 130 is provided above the mounting table 110 so as to face the mounting table 110 .
  • a space formed between the upper electrode 130 and the mounting table 110 serves as a plasma generation space.
  • the upper electrode 130 is supported above the processing vessel 102 via an insulating shielding member 131 .
  • the upper electrode 130 is mainly composed of an electrode plate 132 and an electrode support 134 .
  • the electrode support 134 detachably supports the electrode plate 132 .
  • the electrode plate 132 is made of quartz, for example.
  • the electrode support 134 is made of a conductive material such as aluminum with an anodized surface.
  • the electrode support 134 is provided with a processing gas supply section 140 for introducing a processing gas from a processing gas supply source 142 into the processing container 102 .
  • a processing gas supply source 142 is connected to a gas inlet 143 of the electrode support 134 via a gas supply pipe 144 .
  • the gas supply pipe 144 is provided with a mass flow controller (MFC) 146 and an opening/closing valve 148 in order from the upstream side.
  • MFC mass flow controller
  • FCS Flow Control System
  • the processing gas supply source 142 supplies various gases used for substrate processing.
  • process gas supply 142 supplies an etching gas for plasma etching.
  • FIG. 1 shows only one processing gas supply system including the gas supply pipe 144, the opening/closing valve 148, the mass flow controller 146, the processing gas supply source 142, and the like, the substrate processing apparatus 100 includes a plurality of processing gases. A supply system may be provided.
  • the electrode support 134 is provided with, for example, a substantially cylindrical gas diffusion chamber 135 .
  • the processing gas introduced from the gas supply pipe 144 flows from the gas introduction port 143 to the gas diffusion chamber 135 .
  • the gas diffusion chamber 135 evenly diffuses the process gas.
  • a large number of gas discharge holes 136 communicating with the inside of the processing chamber 102 are formed in the bottom portion of the electrode support 134 and the electrode plate 132 .
  • the processing gas diffused in the gas diffusion chamber 135 is evenly discharged from many gas discharge holes 136 toward the plasma generation space.
  • the upper electrode 130 functions as a showerhead for supplying process gas.
  • the upper electrode 130 includes an electrode support temperature control section 137 capable of adjusting the electrode support 134 to a predetermined temperature.
  • the electrode support temperature control unit 137 is configured, for example, to circulate the temperature control fluid in a channel 138 provided inside the electrode support 134 .
  • An exhaust pipe 104 is connected to the bottom of the processing container 102 .
  • An exhaust portion 105 is connected to the exhaust pipe 104 .
  • the exhaust unit 105 has a vacuum pump such as a turbomolecular pump.
  • the exhaust unit 105 adjusts the inside of the processing container 102 to a predetermined reduced-pressure atmosphere.
  • the exhaust unit 105 adjusts the inside of the processing container 102 to a predetermined reduced-pressure atmosphere, thereby evacuating the processing container 102 .
  • a loading/unloading port 106 is provided on the side wall of the processing container 102 .
  • the substrate W and the edge ring 119 are loaded/unloaded into/from the processing chamber 102 through the loading/unloading port 106 .
  • a gate valve 108 is provided at the loading/unloading port 106 .
  • a transport arm (not shown) loads the substrate W through the loading/unloading port 106 and transfers the substrate W between the first lifter pins 172 raised from the mounting table 110 .
  • the gate valve 108 is opened.
  • a transport arm (not shown) loads the edge ring 119 through the loading/unloading port 106 and transfers the edge ring 119 between the second lifter pins 182 raised from the mounting table 110 .
  • the unloading of the substrate W and the edge ring 119 is carried out in the reverse order of the loading.
  • a first high-frequency power supply 150 is connected to the upper electrode 130 via a feeder line, and a first matching device 152 is inserted in the feeder line.
  • the first high-frequency power supply 150 can output high-frequency power for plasma generation having a frequency in the range of 50 to 150 MHz.
  • high-frequency power By applying high-frequency power to the upper electrode 130 in this manner, high-density plasma can be formed in the processing container 102 in a preferred dissociated state. This enables plasma processing under lower pressure conditions.
  • the frequency of the output power of the first high-frequency power supply 150 is preferably 50 to 80 MHz, and is typically adjusted to the illustrated 60 MHz or its vicinity.
  • the mounting table 110 is formed containing a conductive material and functions as a lower electrode.
  • a second high-frequency power supply 160 is connected to the mounting table 110 via a feeder line, and a second matching device 162 is inserted in the feeder line.
  • the second high-frequency power supply 160 is capable of outputting high-frequency bias power having a frequency in the range of several hundred kHz to ten and several MHz.
  • the frequency of the output power of the second high frequency power supply 160 is typically adjusted to 2 MHz, 13.56 MHz, or the like.
  • a high-pass filter (HPF) 164 that filters the high-frequency current flowing from the first high-frequency power supply 150 is connected to the mounting table 110 .
  • a low pass filter (LPF) 154 is connected to the upper electrode 130 to filter a high frequency current flowing into the upper electrode 130 from the second high frequency power supply 160 .
  • FIG. 2 is a diagram showing a simplified example of the configuration of the mounting table 110 according to the embodiment.
  • FIG. 2 shows a configuration for raising and lowering the first lifter pins 172 .
  • the mounting table 110 has a mounting portion 200 , first lifter pins 172 and a driving portion 202 .
  • the mounting portion 200 is configured by stacking a base 200a and a support portion 200b. Note that the mounting section 200 may include other layers. Further, the mounting section 200 may be configured by only the base 200a.
  • the mounting portion 200 is provided with a first surface 211 on which an object to be supported is mounted and a second surface 212 which is the back surface of the first surface 211 .
  • the first surface 211 serves as a first mounting surface 115a on which the substrate W is mounted on the substrate mounting portion 115, and serves as a second mounting surface 116a on which the edge ring 119 is mounted on the outer peripheral portion . Note that when the electrostatic chuck 120 is provided on the substrate mounting portion 115 , the electrostatic chuck 120 is arranged on the first surface 211 .
  • the mounting portion 200 has a through hole 221 penetrating through the first surface 211 and the second surface 212 corresponding to the arrangement position of the first lifter pin 172 .
  • the through hole 221 is formed vertically.
  • the through hole 221 is divided into a through hole 221a passing through the base 200a and a through hole 221b passing through the support portion 200b.
  • the through hole 221a and the through hole 221b are formed at similar positions and communicate with each other.
  • the through hole 221a is formed to have a slightly larger diameter than the through hole 221b.
  • the temperature adjustment mechanism 117 is provided on either the base 200a or the support portion 200b.
  • the base 200a is formed with the channel 118 described above.
  • the base 200a is adjusted to a predetermined temperature by circulating the temperature control fluid in the flow path 118. As shown in FIG.
  • the first lifter pin 172 is housed in the through hole 221 and is movable in the axial direction of the through hole 221. In FIG. 2, the first lifter pin 172 is vertically movable.
  • the first lifter pin 172 is divided into a first pin member 231 and a second pin member 232.
  • the first pin member 231 and the second pin member 232 are each formed in a bar shape with a predetermined radius.
  • the diameter of the first pin member 231 is slightly larger than that of the second pin member 232 .
  • the first pin member 231 is formed shorter than the length of the through hole 221a.
  • the first pin member 231 is housed in the through hole 221a and is movable in the axial direction.
  • the base 200a is formed with a through hole 221a having a diameter slightly larger than the diameter of the first pin member 231. As shown in FIG.
  • the second pin member 232 is formed sufficiently longer than the length of the through hole 221b.
  • the second pin member 232 is housed in the through hole 221a so as to pass through the through hole 221b, and is movable in the axial direction of the through hole 221a.
  • the second pin member 232 has an upper end that enters the through hole 221a and is in contact with the first pin member 231, and a lower end that reaches below the through hole 221b.
  • a through hole 221 b is formed with a diameter that is approximately the same as or slightly larger than the diameter of the support portion 200 b and the second pin member 232 .
  • the supporting portion 200b is provided with a sealing member 200c such as a seal on the peripheral surface of the through hole 221b facing the second pin member 232 to seal the gap between the support portion 200b and the second pin member 232 .
  • a sleeve may be provided along the inner surface of the through hole 221 in order to adjust the friction, electrical characteristics, etc. of the contact surface with the first pin member 231 and the second pin member 232 .
  • the through hole 221b may be provided with a sleeve along the inner surface.
  • the driving part 202 drives the second pin member 232 in the axial direction.
  • the drive section 202 has a holding section 202a that holds the first lifter pin 172 .
  • the second pin member 232 has a mounting portion 232a provided with a screw at its lower end.
  • the second pin member 232 is fixed to the holding portion 202a by coupling the screw of the mounting portion 232a to the thread groove provided in the holding portion 202a.
  • the driving unit 202 vertically drives the holding unit 202a by a driving force of a motor such as a DC motor, a stepping motor, a linear motor, a piezo actuator, an air driving mechanism, or the like. As the holding portion 202a is driven vertically, the second pin member 232 is driven vertically.
  • the drive unit 202 drives the second pin member 232 vertically with driving accuracy suitable for transporting the substrate W and transporting the edge ring 119 .
  • the drive unit 202 moves the second pin members 232 upward.
  • the first pin member 231 is pushed by the second pin member 232 and moves upward.
  • the first pin member 231 protrudes from the first surface 211 and the substrate W is lifted up.
  • the driving section 202 drives the second pin member 232 toward the second surface 212 in the axial direction of the through hole 221 , thereby moving the first pin member 231 .
  • the second pin member 232 is separated from the end on the second surface 212 side. As a result, the first pin member 231 descends into the through hole 221 and is stored in the through hole 221 .
  • the first pin member 231 is formed with a lid portion 231b having a wider tip on the first surface 211 side.
  • the first pin member 231 has a pin main body portion 231a and a lid portion 231b having an outer diameter larger than the outer diameter of the pin main body portion 231a at the end on the first surface 211 side.
  • the pin body portion 231a is formed with a diameter equal to or less than the diameter of the through hole 221a.
  • the pin body portion 231a is formed with a constant diameter equal to or less than the diameter of the through hole 221a.
  • the lid portion 231b is formed with a diameter larger than the diameter of the through hole 221a. Since the diameter of the lid portion 231b is larger than the diameter of the through hole 221a, the first pin member 231 can be stored in the through hole 221a only up to the position of the lower end of the lid portion 231b.
  • the through hole 221a has a concave portion 221c in the opening on the first surface 211 side, which is fitted with the lid portion 231b when the first pin member 231 is stored in the through hole 221a.
  • the concave portion 221c is formed with a depth greater than the thickness of the lid portion 231b so that the upper end of the lid portion 231b does not protrude from the first surface 211 when the first pin member 231 is stored in the through hole 221a.
  • the lid portion 231b is formed such that the diameter gradually decreases from the tip.
  • the diameter of the concave portion 221c is gradually reduced from the side of the first surface 211 so as to be flush with the lid portion 231b. That is, the lid portion 231b is formed in a conical shape whose diameter gradually decreases downward from the tip.
  • the recessed portion 221c is also formed in a conical shape with a size approximately equal to or slightly larger than that of the lid portion 231b, and the diameter of the recessed portion 221c gradually decreases toward the lower side.
  • the lid portion 231b covers the first surface 211 side of the through hole 221 and becomes a lid.
  • gas can be prevented from entering the space between the first pin member 231 and the through hole 221, thereby reducing the risk of discharge.
  • the first lifter pin 172 and the second lifter pin 182 are not divided and are configured as one member.
  • the first lifter pins 172 and the second lifter pins 182 are configured as one member as in the conventional art, the first lifter pins 172 and the second lifter pins 182 are difficult to attach to the mounting table 110 .
  • the first lifter pin 172 and the second lifter pin 182 can be inserted into the through hole 221 only from the first surface 211 side by forming the cover portion 231b with the widened tip.
  • first lifter pin 172 and the second lifter pin 182 are configured as one member, they are inserted into the through hole 221 of the mounting table 110 from the first surface 211 side and then attached to the drive section 202 .
  • the driving section 202 requires a mechanism for automatically clamping the ends of the first lifter pins 172 and the second lifter pins 182 .
  • the mounting table 110 has a configuration in which the first lifter pins 172 and the second lifter pins 182 are divided into the first pin members 231 and the second pin members 232 . Since the first pin member 231 and the second pin member 232 only contact each other, they can be separately attached to the mounting table 110 .
  • the first pin member 231 can be inserted into the through-hole 221 only from the first surface 211 side by forming the cover portion 231b with a widened tip.
  • the mounting table 110 according to this embodiment can be easily attached by separately attaching the first pin member 231 and the second pin member 232 .
  • the mounting table 110 After attaching one end of the second pin member 232 to the drive unit 202 , the other end of the second pin member 232 is inserted into the through hole 221 of the mounting table 110 from the second surface 212 side. After that, the first pin member 231 is inserted into the through hole 221 of the mounting table 110 from the first surface 211 side.
  • the first pin member 231 does not need to be fixed to the drive section 202 . Therefore, the mounting table 110 according to the present embodiment can easily attach the first lifter pins 172 and the second lifter pins 182 .
  • the drive unit 202 moves the second pin members 232 upward so that the first pins are moved through the second pin members 232 .
  • the mounting table 110 moves the second pin members 232 downward by the drive unit 202 and moves the first pin members 231 downward by its own weight.
  • the first pin member 231 and the second pin member 232 are only in contact and are not connected. For this reason, the first pin member 231 does not descend when the friction with the through hole 221 is strong or when the first pin member 231 is caught.
  • the first pin member 231 may include a high-density material.
  • FIGS. 3A to 3F are diagrams showing a simplified example of the configuration of the first pin member 231 according to the embodiment.
  • the first pin member 231 is configured such that a pin body portion 231a and a lid portion 231b are mainly made of a material 231c, and a high-density material 231d is included in the main material 231c.
  • the main material 231c include resins such as Al (aluminum), Ti (titanium), and PEEK (polyetheretherketone).
  • the high-density material 231d include Fe (iron), W (tungsten), and Al.
  • the main material 231c is Al and the high density material 231d is Fe.
  • Ti is used as the main material 231c
  • W is used as the high-density material 231d.
  • the main material 231c is PEEK, and the high-density material 231d is Al.
  • the first pin member 231 may be configured by bonding or joining the material 231c and the high-density material 231d.
  • a high density material 231d is adhered or bonded to the lower portion of the material 231c.
  • a material 231c is adhered or joined around a rod-shaped high-density material 231d.
  • first pin member 231 may have the pin body portion 231a made of the high-density material 231d.
  • the entire pin body portion 231a is constructed of high density material 231d.
  • the first pin member 231 increases its own weight by including the high-density material 231d.
  • the mounting table 110 can facilitate the lowering of the first pin members 231 .
  • the first pin member 231 may be drawn toward the second pin member 232 side.
  • one of the first pin member 231 and the second pin member 232 may be configured to have a guide that holds the other so as to be movable in the same straight line.
  • FIG. 4 to 6 are diagrams showing simplified examples of configurations of the first pin member 231 and the second pin member 232 according to the embodiment. 4 to 6 show a simplified configuration of the mounting table 110 according to the embodiment. 4 to 6 show the mounting portion 200 that constitutes the mounting table 110 and the first lifter pins 172.
  • FIG. 4 to 6 show the mounting portion 200 as one member.
  • the mounting portion 200 has a first surface 211 for mounting a substrate W as an object to be supported. A pattern of dots is formed on the first surface 211, and the substrate W is supported by the dots. The space between the first surface 211 and the substrate W is supplied with a gas such as a heat transfer gas.
  • the mounting portion 200 is formed with a through hole 221 passing through the first surface 211 and the second surface 212 .
  • the first pin member 231 and the second pin member 232 are provided with magnets 233a and 233b so that the first pin member 231 and the second pin member 232 are attracted by the magnetic force.
  • the first pin member 231 is provided with an N pole magnet 233a on the second pin member 232 side.
  • the second pin member 232 is provided with an S pole magnet 233b on the first pin member 231 side.
  • the first pin member 231 and the second pin member 232 are connected by an elastic member 234 such as a spring so that the first pin member 231 and the second pin member 232 are pulled.
  • an elastic member 234 such as a spring
  • the end of the first pin member 231 on the second pin member 232 side and the end of the second pin member 232 on the first pin member 231 side are connected by an elastic member 234 .
  • the elastic member 234 may be rubber or the like instead of the spring.
  • one of the first pin member 231 and the second pin member 232 is provided with a guide 235 that holds the other movably in the same straight line.
  • a guide 235 is provided along the upper end portion of the second pin member 232 along the side surface, and the lower end portion of the first pin member 231 is surrounded by the guide 235 and held movably in the same straight line.
  • a guide 235 may be provided along the side surface of the lower end portion of the first pin member 231, and the upper portion of the second pin member 232 may be surrounded by the guide 235 and held so as to be movable in the same straight line.
  • a guide 235 may be provided in the configurations of FIGS. 4 and 6 as well.
  • the first pin member 231 and the second pin member 232 are connected by a connecting portion 240 so that the first pin member 231 and the second pin member 232 are pulled.
  • the first pin member 231 has a recess 241 for connection formed at the end on the second pin member 232 side.
  • the concave portion 241 is formed narrow on the opening side.
  • the second pin member 232 has an engaging portion 242 for connection formed at the end on the first pin member 231 side. By engaging the engaging portion 242 with the concave portion 241, the first pin member 231 and the second pin member 232 are connected.
  • the connecting portion 240 may be provided with an elastic member 243 such as a spring at the portion where the recessed portion 241 and the engaging portion 242 are engaged to apply downward stress with a reaction force.
  • the mounting table 110 can be moved by lowering the second pin member 232 by the driving unit 202 so that the first pin member 231 can be pulled downward. In this manner, the mounting table 110 is configured to pull the first pin member 231 toward the second pin member 232, so that the first pin member 231 can be easily lowered.
  • One of the magnets 233a and 233b may be a magnet, and the other may be a magnetic material such as iron (Fe) or nickel (Ni). At least one of the magnets 233a and 233b may be an electromagnet.
  • the structure is not limited to the dead weight, magnetic force, spring, and string shown in the embodiment, as long as it has a force that pulls the first pin member 231 downward.
  • electrodes are embedded inside the first pin member 231 and the second pin member 232, and an electrostatic force such as a Coulomb force or a Johnson-Rahbek force generated by electrifying the electrodes causes the first pin member 231 to move toward the first pin member 231. It is good also as a structure pulled to the 2 pin member 232 side.
  • the first pin member 231 may be provided with a positioning projection at the tip on the first surface 211 side.
  • 7A to 7C are diagrams explaining an example of the shape of the first pin member 231 according to the embodiment.
  • the first pin member 231 has a hemispherical projection 231e for positioning at the center of the upper surface of the lid portion 231b having a wider tip on the first surface 211 side.
  • the first pin member 231 has a positioning rectangular projection 231e at the center of the upper surface of the lid portion 231b.
  • FIG. 7c shows a state in which the through hole 221 on the side of the first surface 211 is covered with the first pin member 231 as a lid.
  • the through hole 221 has a concave portion 221 c on the first surface 211 side so that the upper surface of the first pin member 231 does not protrude from the first surface 211 . Since the first pin member 231 is provided with the protrusion 231e, the substrate W and the edge ring 119 can be arranged with high precision. The substrate W and the edge ring 119 may be provided with recesses for positioning corresponding to the positions of the first pin members 231 . Thereby, the substrate W and the edge ring 119 can be arranged with high accuracy.
  • the mounting table 110 has the mounting section 200 , the first pin members 231 , the second pin members 232 and the driving section 202 .
  • the mounting portion 200 is provided with a first surface 211 on which an object to be supported (the substrate W and the edge ring 119) is mounted and a second surface 212 which is the back surface of the first surface 211.
  • a through hole 221 is formed through the second surface 212 .
  • the first pin member 231 is arranged in the through hole 221 and is movable in the axial direction of the through hole 221 .
  • the second pin member 232 is arranged on the second surface 212 side with respect to the first pin member 231 of the through hole 221 and is movable in the axial direction.
  • the driving portion 202 axially drives the second pin member 232 .
  • the first pin member 231 is formed with a lid portion 231b having a wider tip on the first surface 211 side.
  • the through-hole 221 has a concave portion 221c in the opening on the first surface 211 side, which is fitted with the lid portion 231b when the first pin member 231 is stored in the through-hole 221 .
  • the mounting table 110 can facilitate attachment of the lifter pins while suppressing the occurrence of abnormal discharge in the gaps between the through holes 221 and the lifter pins (the first lifter pins 172 and the second lifter pins 182).
  • the first pin member 231 is configured to be attracted to the second pin member 232 side.
  • the mounting table 110 moves the first pin member 231 to the second surface 212 side in the through hole 221 stably by moving the second pin member 232 to the second surface 212 side by the driving unit 202 .
  • the mounting table 110 can bring the lid portion 231b and the recessed portion 221c into close contact with each other. of gas can be suppressed.
  • the first pin member 231 is provided with a first magnet (magnet 233a) on the second pin member 232 side.
  • the second pin member 232 is provided with a second magnet (magnet 233b) that attracts the first magnet on the first pin member 231 side. Accordingly, the mounting table 110 allows the second pin member 232 to attract the first pin member 231 without physically connecting the second pin member 232 and the first pin member 231 .
  • the end of the first pin member 231 on the second pin member 232 side and the end of the second pin portion on the first pin member 231 side are connected by an elastic member 234 .
  • the mounting table 110 allows the second pin member 232 to attract the first pin member 231 .
  • the first pin member 231 includes a high-density material 231d.
  • the mounting table 110 can facilitate the lowering of the first pin members 231 .
  • the first pin member 231 has a pin main body 231a formed with a diameter equal to or smaller than the diameter of the through hole 221, and a lid portion 231b having a diameter larger than the diameter of the through hole 221 is formed at the tip of the first surface 211 side. ing.
  • the mounting table 110 can cover the first surface 211 side of the through hole 221 with the lid portion 231b to close the through hole 221. Intrusion of gas into the space between the 1-pin member 231 and the through hole 221 can be suppressed.
  • the diameter of the lid portion 231b is gradually reduced from the tip.
  • the diameter of the concave portion 221c is gradually reduced from the side of the first surface 211 so as to be flush with the lid portion 231b. Accordingly, the mounting table 110 can bring the lid portion 231 b and the recessed portion 221 c into close contact with each other, and can suppress gas from entering the space between the first pin member 231 and the through hole 221 .
  • one of the first pin member 231 and the second pin member 232 has a guide 235 that holds the other movably in the same straight line.
  • the mounting table 110 can hold the first pin member 231 and the second pin member 232 in a state where they can be easily moved in the same straight line.
  • the driving section 202 drives the second pin member 232 in the axial direction toward the second surface 212 so that the second surface 212 of the first pin member 231 moves toward the second surface 212 .
  • the second pin member 232 is spaced from the side end.
  • the driving section 202 drives the second pin member 232 in the axial direction toward the first surface 211 so that the first pin member 231 moves toward the second surface 212 .
  • the second pin member 232 is brought into contact with the end of the .
  • the mounting table 110 can raise and lower the first pin member 231 from the first surface 211 and stably raise and lower the object placed on the first surface 211 .
  • the substrate processing is plasma etching.
  • Any substrate processing may be used as long as the substrate processing is carried out by placing an object on a mounting table.
  • the substrate processing apparatus 100 is a capacitively coupled plasma (CCP) type plasma processing apparatus.
  • CCP capacitively coupled plasma
  • the substrate processing apparatus 100 may be any apparatus as long as it performs substrate processing.
  • the substrate processing apparatus 100 uses inductively-coupled plasma (ICP), capacitively-coupled plasma (CCP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave excited plasma (HWP), or A device using surface wave plasma (SWP) or the like may also be used.
  • ICP inductively-coupled plasma
  • CCP capacitively-coupled plasma
  • ECR plasma electron-cyclotron-resonance plasma
  • HWP helicon wave excited plasma
  • SWP surface wave plasma
  • the substrate W is a semiconductor wafer
  • the substrate W can be any substrate.
  • (Appendix 1) a placement portion provided with a first surface on which an object to be supported is placed and a second surface serving as the back surface of the first surface, and a through hole formed through the first surface and the second surface; , a first pin member disposed in the through hole and movable in the axial direction of the through hole; a second pin member disposed on the second surface side of the through hole with respect to the first pin member and movable in the axial direction; a drive unit that drives the second pin member in the axial direction; has The first pin member is formed with a lid portion having a widened tip on the first surface side, The through-hole has a recess in the opening on the first surface side, which is fitted with the lid when the first pin member is stored in the through-hole, Mounting table.
  • the first pin member is provided with a first magnet on the second pin member side
  • the second pin member is provided with a second magnet that attracts the first magnet on the first pin member side
  • the mounting table according to appendix 1 or 2.
  • Appendix 4 The mounting table according to appendix 1 or 2, wherein an end portion of the first pin member on the side of the second pin member and an end portion of the second pin portion on the side of the first pin member are connected by an elastic member.
  • the lid portion is formed with a diameter larger than the diameter of the through hole at a tip of the pin main body portion formed with a diameter equal to or smaller than the diameter of the through hole on the side of the first surface. 6.
  • the mounting table according to any one of 1 to 5.
  • the lid portion is formed such that the diameter gradually decreases from the tip, 7.
  • Appendix 8 The mounting table according to any one of Appendices 1 to 7, wherein one of the first pin member and the second pin member has a guide that holds the other movably in a same straight line.
  • Appendix 10 a processing container in which plasma processing is performed; a mounting table according to any one of Appendices 1 to 9, wherein the mounting table is arranged in the processing container and on which a substrate to be processed is mounted;
  • a substrate processing apparatus having
  • substrate processing apparatus 110 mounting table 119 edge ring 115a first mounting surface 116a second mounting surface 172 first lifter pin 182 second lifter pin 200 mounting portion 200a base 200b supporting portion 202 driving portion 202a holding portion 231 1 pin member 232 2nd pin member 211 1st surface 212 2nd surface 221 through holes 221a, 221b through hole 231b lid 221c recesses 233a, 233b magnet 231d high density material 234 elastic member 235 guide

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Abstract

According to the present invention, a mounting part is provided with a first surface on which an object to be supported is mounted, and a second surface which is the reverse side of the first surface, the mounting part having a through-hole penetrating through the first surface and the second surface. A first pin member is disposed in the through-hole and can move in the axial direction of the through-hole. A second pin member is disposed on the second surface side with respect to the first pin member in the through-hole, and can move in the axial direction. A driving unit drives the second pin member in the axial direction. The first pin member has a lid part formed thereon that widens the width of the tip end on the first surface side. The through-hole has, on an opening portion on the first surface side, a recess that engages with the lid part when the first pin member is stored in the through-hole.

Description

載置台及び基板処理装置Mounting table and substrate processing device
　本開示は、載置台及び基板処理装置に関するものである。 The present disclosure relates to a mounting table and a substrate processing apparatus.
　特許文献１は、基板が載置される載置台に、リフタピンを配設した貫通穴を形成し、基板を支持するリフタピンの頂部に幅を広げた蓋部を設けて、リフタピンを下降させた状態では蓋部により貫通穴を閉塞した状態となるように構成する技術を開示する。 In Patent Document 1, a mounting table on which a substrate is placed is formed with through holes in which lifter pins are arranged, and a lid portion with a wide width is provided at the top of the lifter pins that support the substrate, and the lifter pins are lowered. Then, a technique is disclosed in which the through hole is closed by the cover.
特開２０１１－２３８８２５号公報JP 2011-238825 A
　本開示は、貫通穴のリフタピンとの隙間での異常放電の発生を抑制しつつ、リフタピンの取り付けを容易にする技術を提供する。 The present disclosure provides a technique for facilitating attachment of lifter pins while suppressing the occurrence of abnormal electrical discharge in gaps between through holes and lifter pins.
　本開示の一態様による載置台は、載置部と、第１ピン部材と、第２ピン部材と、駆動部とを有する。載置部は、支持する対象物が載置される第１面及び当該第１面の裏面となる第２面が設けられ、第１面と第２面に貫通する貫通穴が形成されている。第１ピン部材は、貫通穴に配置され、貫通穴の軸方向に移動可能とされている。第２ピン部材は、貫通穴の第１ピン部材に対して第２面側に配置され、軸方向に移動可能とされている。駆動部は、第２ピン部材を軸方向に駆動する。また、第１ピン部材は、第１面側の先端の幅を広げた蓋部が形成されている。貫通穴は、第１面側の開口部に、第１ピン部材が貫通穴に格納された際に、蓋部と嵌合する凹部を有する。 A mounting table according to one aspect of the present disclosure includes a mounting section, a first pin member, a second pin member, and a driving section. The placement portion has a first surface on which an object to be supported is placed and a second surface that is the back surface of the first surface, and a through hole penetrating through the first surface and the second surface is formed. . The first pin member is arranged in the through hole and is movable in the axial direction of the through hole. The second pin member is arranged on the second surface side of the through hole with respect to the first pin member, and is movable in the axial direction. The drive unit axially drives the second pin member. Further, the first pin member is formed with a lid portion having a widened tip on the first surface side. The through hole has a recess in the opening on the first surface side, which is fitted with the lid when the first pin member is stored in the through hole.
　本開示によれば、貫通穴のリフタピンとの隙間での異常放電の発生を抑制しつつ、リフタピンの取り付けを容易にすることができるという効果を奏する。 According to the present disclosure, it is possible to suppress the occurrence of abnormal discharge in the gap between the through hole and the lifter pin, and to facilitate attachment of the lifter pin.
図１は、実施形態に係る基板処理装置の構成の一例を示す図である。FIG. 1 is a diagram showing an example of the configuration of a substrate processing apparatus according to an embodiment. 図２は、実施形態に係る載置台の構成の一例を簡略化して示した図である。FIG. 2 is a diagram simply showing an example of the configuration of the mounting table according to the embodiment. 図３Ａは、実施形態に係る第１ピン部材の構成の一例を簡略化して示した図である。FIG. 3A is a diagram simply showing an example of the configuration of a first pin member according to the embodiment; 図３Ｂは、実施形態に係る第１ピン部材の構成の一例を簡略化して示した図である。FIG. 3B is a diagram simply showing an example of the configuration of the first pin member according to the embodiment; 図３Ｃは、実施形態に係る第１ピン部材の構成の一例を簡略化して示した図である。FIG. 3C is a diagram simply showing an example of the configuration of the first pin member according to the embodiment; 図３Ｄは、実施形態に係る第１ピン部材の構成の一例を簡略化して示した図である。FIG. 3D is a diagram simply showing an example of the configuration of the first pin member according to the embodiment; 図３Ｅは、実施形態に係る第１ピン部材の構成の一例を簡略化して示した図である。FIG. 3E is a diagram simply showing an example of the configuration of the first pin member according to the embodiment; 図３Ｆは、実施形態に係る第１ピン部材の構成の一例を簡略化して示した図である。FIG. 3F is a diagram simply showing an example of the configuration of the first pin member according to the embodiment; 図４は、実施形態に係る第１ピン部材及び第２ピン部材の構成の一例を簡略化して示した図である。FIG. 4 is a diagram simply showing an example of the configuration of the first pin member and the second pin member according to the embodiment. 図５は、実施形態に係る第１ピン部材及び第２ピン部材の構成の一例を簡略化して示した図である。FIG. 5 is a diagram simply showing an example of the configuration of the first pin member and the second pin member according to the embodiment. 図６は、実施形態に係る第１ピン部材及び第２ピン部材の構成の一例を簡略化して示した図である。FIG. 6 is a diagram simply showing an example of the configuration of the first pin member and the second pin member according to the embodiment. 図７Ａは、実施形態に係る第１ピン部材の形状の一例を説明する図である。7A is a diagram illustrating an example of the shape of a first pin member according to the embodiment; FIG. 図７Ｂは、実施形態に係る第１ピン部材の形状の一例を説明する図である。7B is a diagram illustrating an example of the shape of the first pin member according to the embodiment; FIG. 図７Ｃは、実施形態に係る第１ピン部材の形状の一例を説明する図である。7C is a diagram illustrating an example of the shape of the first pin member according to the embodiment; FIG.
　以下に、開示する載置台及び基板処理装置の一実施形態について、図面に基づいて詳細に説明する。なお、本実施形態により、開示する載置台及び基板処理装置が限定されるものではない。 An embodiment of the disclosed mounting table and substrate processing apparatus will be described in detail below based on the drawings. Note that the disclosed mounting table and substrate processing apparatus are not limited by the present embodiment.
　処理容器の内部に設けられた載置台に基板を載置し、処理容器の内部を真空状態として基板にエッチングなどのプラズマ処理などの基板処理を行う基板処理装置が知られている。このような基板処理装置は、載置台に貫通穴を形成してリフタピンを格納し、リフタピンを上昇させて基板や基板の周囲に配置されたリング部材を載置台から上昇させて搬入出する。 A substrate processing apparatus is known in which a substrate is placed on a mounting table provided inside a processing container, and substrate processing such as plasma processing such as etching is performed on the substrate by evacuating the inside of the processing container. In such a substrate processing apparatus, through holes are formed in the mounting table to store the lifter pins, and the lifter pins are lifted to lift the substrate and the ring member arranged around the substrate from the mounting table for loading and unloading.
　載置台は、貫通穴のリフタピンとの隙間で不具合が発生する場合がある。例えば、プラズマプロセスを実行した際、隙間で異常放電を起こしてしまう虞がある。そこで、特許文献１では、リフタピンの頂部に幅を広げた蓋部を設けて、リフタピンを下降させた状態では蓋部により貫通穴を閉塞した状態となるように構成する。 　The mounting table may have problems due to the gap between the through hole and the lifter pin. For example, when performing a plasma process, there is a risk of abnormal discharge occurring in the gap. Therefore, in Japanese Patent Laid-Open No. 2002-100000, a cover having a wide width is provided at the top of the lifter pin so that the through hole is closed by the cover when the lifter pin is lowered.
　リフタピンの頂部に蓋部を設けた場合、リフタピンは、貫通穴に対して載置台の基板を載置する載置面側からしか挿入できなくなる。これにより、載置台を組み立てる場合、リフタピンを載置台の貫通穴に載置面側から挿入してから、リフタピンを昇降する駆動部に取り付けることになり、リフタピンの取り付けが困難となる。 When a cover is provided on the top of the lifter pin, the lifter pin can only be inserted into the through hole from the mounting surface side of the mounting table on which the substrate is mounted. As a result, when assembling the mounting table, the lifter pins are inserted into the through holes of the mounting table from the mounting surface side, and then attached to the driving portion for raising and lowering the lifter pins, making it difficult to attach the lifter pins.
　そこで、貫通穴のリフタピンとの隙間での異常放電の発生を抑制しつつ、リフタピンの取り付けを容易にする技術が期待されている。 Therefore, a technology is expected that facilitates the attachment of the lifter pin while suppressing the occurrence of abnormal discharge in the gap between the through hole and the lifter pin.
［実施形態］
［基板処理装置の構成］
　実施形態について説明する。以下では、本開示の基板処理装置を、プラズマ処理を実施するプラズマ処理装置とした場合を例に説明する。図１は、実施形態に係る基板処理装置１００の構成の一例を示す図である。図１に示す基板処理装置１００は、例えば平行平板の電極を備える容量結合プラズマ（ＣＣＰ：Capacitively　Coupled　Plasma）タイプのプラズマエッチング装置である。 [Embodiment]
[Configuration of substrate processing apparatus]
An embodiment will be described. A case where the substrate processing apparatus of the present disclosure is a plasma processing apparatus that performs plasma processing will be described below as an example. FIG. 1 is a diagram showing an example of the configuration of a substrate processing apparatus 100 according to an embodiment. The substrate processing apparatus 100 shown in FIG. 1 is, for example, a capacitively coupled plasma (CCP) type plasma etching apparatus that includes parallel plate electrodes.
　基板処理装置１００は、例えば、表面が陽極酸化処理（アルマイト処理）されたアルミニウムから成る円筒形状に成形された処理容器１０２を備える。処理容器１０２は、接地されている。処理容器１０２内の底部には、半導体ウエハなどの基板Ｗを載置するための略円柱状の載置台１１０が設けられている。載置台１１０は、セラミックなどで構成された環状の絶縁体１１２により支持されている。 The substrate processing apparatus 100 includes, for example, a cylindrical processing container 102 made of aluminum whose surface is anodized (anodized). The processing container 102 is grounded. A substantially cylindrical mounting table 110 for mounting a substrate W such as a semiconductor wafer is provided at the bottom of the processing container 102 . The mounting table 110 is supported by an annular insulator 112 made of ceramic or the like.
　載置台１１０は、所定の温度に調整可能な温度調整機構１１７を備える。温度調整機構１１７は、例えば、載置台１１０内に設けられた流路１１８に冷媒、伝熱ガスのような温調流体を循環するように構成されている。 The mounting table 110 includes a temperature adjustment mechanism 117 that can be adjusted to a predetermined temperature. The temperature control mechanism 117 is configured, for example, to circulate a temperature control fluid such as a coolant or a heat transfer gas through a channel 118 provided inside the mounting table 110 .
　載置台１１０は、上側中央部に基板Ｗを載置するための凸状の基板載置部１１５が形成されている。また、載置台１１０は、基板載置部１１５の外周側に基板載置部１１５よりも上面が低い外周部１１６が形成されている。基板載置部１１５の上面は、基板Ｗを載置する第１載置面１１５ａとなる。外周部１１６の上面は、フォーカスリングやカバーリングなどのエッジリング１１９を載置する第２載置面１１６ａとなる。基板載置部１１５の上部に静電チャック１２０を設ける場合は、静電チャック１２０の上面が第１載置面１１５ａとなる。以下では、基板載置部１１５と静電チャック１２０とを併せて適宜「基板載置部１１５」と表記する。静電チャック１２０は、絶縁材の間に電極１２２が介在された構成となっている。静電チャック１２０は、電極１２２に接続された図示しない直流電源から、例えば、１．５ｋＶの直流電圧が印加される。これによって、基板Ｗが静電チャック１２０に静電吸着される。基板載置部１１５は、基板Ｗの径よりも小径に形成されている。基板Ｗを基板載置部１１５に載置したときに、基板Ｗの周縁部は、基板載置部１１５から張り出している。 The mounting table 110 has a convex substrate mounting portion 115 for mounting the substrate W on the upper central portion. Further, the mounting table 110 is formed with an outer peripheral portion 116 having a lower upper surface than the substrate placing portion 115 on the outer peripheral side of the substrate placing portion 115 . The upper surface of the substrate mounting portion 115 serves as a first mounting surface 115a on which the substrate W is mounted. The upper surface of the outer peripheral portion 116 serves as a second mounting surface 116a for mounting an edge ring 119 such as a focus ring or a cover ring. When the electrostatic chuck 120 is provided above the substrate mounting part 115, the upper surface of the electrostatic chuck 120 becomes the first mounting surface 115a. Hereinafter, the substrate mounting part 115 and the electrostatic chuck 120 are collectively referred to as the "substrate mounting part 115". The electrostatic chuck 120 has a configuration in which an electrode 122 is interposed between insulating materials. A DC voltage of, for example, 1.5 kV is applied to the electrostatic chuck 120 from a DC power source (not shown) connected to the electrode 122 . Thereby, the substrate W is electrostatically attracted to the electrostatic chuck 120 . The substrate mounting part 115 is formed to have a smaller diameter than the diameter of the substrate W. As shown in FIG. When the substrate W is placed on the substrate placement portion 115 , the peripheral portion of the substrate W protrudes from the substrate placement portion 115 .
　載置台１１０の上端周縁部には、静電チャック１２０の第１載置面１１５ａに載置された基板Ｗを囲むようにエッジリング１１９が配置されている。エッジリング１１９は、当該エッジリング１１９の内周面が基板載置部１１５の外周面を囲むように外周部１１６の第２載置面１１６ａに載置されている。 An edge ring 119 is arranged on the upper peripheral edge of the mounting table 110 so as to surround the substrate W mounted on the first mounting surface 115 a of the electrostatic chuck 120 . The edge ring 119 is placed on the second placement surface 116 a of the outer peripheral portion 116 so that the inner peripheral surface of the edge ring 119 surrounds the outer peripheral surface of the substrate placement portion 115 .
　絶縁体１１２、載置台１１０及び静電チャック１２０は、第１載置面１１５ａに載置された基板Ｗの裏面に伝熱媒体（例えば、Ｈｅガスなどのバックサイドガス）を供給するためのガス通路が形成されている。この伝熱媒体を介して載置台１１０と基板Ｗとの間の熱伝達がなされ、基板Ｗが所定の温度に維持される。 The insulator 112, the mounting table 110, and the electrostatic chuck 120 are gas for supplying a heat transfer medium (for example, a backside gas such as He gas) to the rear surface of the substrate W mounted on the first mounting surface 115a. A passage is formed. Heat is transferred between the mounting table 110 and the substrate W through this heat transfer medium, and the substrate W is maintained at a predetermined temperature.
　載置台１１０には、第１リフタピン１７２が第１載置面１１５ａから昇降自在に設けられている。また、載置台１１０には、第２リフタピン１８２が第２載置面１１６ａから昇降自在に設けられている。第１リフタピン１７２は、不図示の駆動部によって駆動され、基板Ｗを第１載置面１１５ａからリフトアップすることができる。第２リフタピン１８２は、不図示の駆動部によって駆動され、エッジリング１１９を第２載置面１１６ａからリフトアップすることができる。 A first lifter pin 172 is provided on the mounting table 110 so as to be vertically movable from the first mounting surface 115a. Further, the mounting table 110 is provided with a second lifter pin 182 that can be moved up and down from the second mounting surface 116a. The first lifter pins 172 are driven by a drive unit (not shown) and can lift up the substrate W from the first mounting surface 115a. The second lifter pins 182 are driven by a drive section (not shown) to lift the edge ring 119 from the second mounting surface 116a.
　載置台１１０の上方には、載置台１１０に対向するように上部電極１３０が設けられている。この上部電極１３０と載置台１１０の間に形成される空間がプラズマ生成空間となる。上部電極１３０は、絶縁性遮蔽部材１３１を介して、処理容器１０２の上部に支持されている。 An upper electrode 130 is provided above the mounting table 110 so as to face the mounting table 110 . A space formed between the upper electrode 130 and the mounting table 110 serves as a plasma generation space. The upper electrode 130 is supported above the processing vessel 102 via an insulating shielding member 131 .
　上部電極１３０は、主として、電極板１３２と、電極支持体１３４とによって構成される。電極支持体１３４は、電極板１３２を着脱自在に支持する。電極板１３２は、例えば、石英から成る。電極支持体１３４は、例えば、表面がアルマイト処理されたアルミニウムなどの導電性材料から成る。 The upper electrode 130 is mainly composed of an electrode plate 132 and an electrode support 134 . The electrode support 134 detachably supports the electrode plate 132 . The electrode plate 132 is made of quartz, for example. The electrode support 134 is made of a conductive material such as aluminum with an anodized surface.
　電極支持体１３４は、処理ガス供給源１４２からの処理ガスを処理容器１０２内に導入するための処理ガス供給部１４０が設けられている。処理ガス供給源１４２は、電極支持体１３４のガス導入口１４３にガス供給管１４４を介して接続されている。 The electrode support 134 is provided with a processing gas supply section 140 for introducing a processing gas from a processing gas supply source 142 into the processing container 102 . A processing gas supply source 142 is connected to a gas inlet 143 of the electrode support 134 via a gas supply pipe 144 .
　ガス供給管１４４には、上流側から順にマスフローコントローラ（ＭＦＣ）１４６、及び開閉バルブ１４８が設けられている。なお、ＭＦＣの代わりにＦＣＳ（Ｆｌｏｗ　Ｃｏｎｔｒｏｌ　Ｓｙｓｔｅｍ）を設けてもよい。 The gas supply pipe 144 is provided with a mass flow controller (MFC) 146 and an opening/closing valve 148 in order from the upstream side. Note that an FCS (Flow Control System) may be provided instead of the MFC.
　処理ガス供給源１４２は、基板処理に用いる各種のガスを供給する。例えば、処理ガス供給源１４２は、プラズマエッチングのためのエッチングガスを供給する。なお、図１にはガス供給管１４４、開閉バルブ１４８、マスフローコントローラ１４６、処理ガス供給源１４２等から成る処理ガス供給系を１つのみ示しているが、基板処理装置１００は、複数の処理ガス供給系を備えてもよい。 The processing gas supply source 142 supplies various gases used for substrate processing. For example, process gas supply 142 supplies an etching gas for plasma etching. Although FIG. 1 shows only one processing gas supply system including the gas supply pipe 144, the opening/closing valve 148, the mass flow controller 146, the processing gas supply source 142, and the like, the substrate processing apparatus 100 includes a plurality of processing gases. A supply system may be provided.
　電極支持体１３４には、例えば、略円筒状のガス拡散室１３５が設けられている。ガス供給管１４４から導入された処理ガスは、ガス導入口１４３からガス拡散室１３５へ流れる。ガス拡散室１３５は、処理ガスを均等に拡散する。電極支持体１３４の底部と電極板１３２には、処理容器１０２内部と連通する多数のガス吐出孔１３６が形成されている。ガス拡散室１３５で拡散された処理ガスは、多数のガス吐出孔１３６から均等にプラズマ生成空間に向けて吐出される。このように、上部電極１３０は、処理ガスを供給するためのシャワーヘッドとして機能する。 The electrode support 134 is provided with, for example, a substantially cylindrical gas diffusion chamber 135 . The processing gas introduced from the gas supply pipe 144 flows from the gas introduction port 143 to the gas diffusion chamber 135 . The gas diffusion chamber 135 evenly diffuses the process gas. A large number of gas discharge holes 136 communicating with the inside of the processing chamber 102 are formed in the bottom portion of the electrode support 134 and the electrode plate 132 . The processing gas diffused in the gas diffusion chamber 135 is evenly discharged from many gas discharge holes 136 toward the plasma generation space. Thus, the upper electrode 130 functions as a showerhead for supplying process gas.
　上部電極１３０は、電極支持体１３４を所定の温度に調整可能な電極支持体温調部１３７を備える。電極支持体温調部１３７は、例えば、電極支持体１３４内に設けられた流路１３８に温調流体を循環するように構成されている。 The upper electrode 130 includes an electrode support temperature control section 137 capable of adjusting the electrode support 134 to a predetermined temperature. The electrode support temperature control unit 137 is configured, for example, to circulate the temperature control fluid in a channel 138 provided inside the electrode support 134 .
　処理容器１０２の底部には、排気管１０４が接続されている。排気管１０４には、排気部１０５が接続されている。排気部１０５は、ターボ分子ポンプなどの真空ポンプを備えている。排気部１０５は、処理容器１０２内を所定の減圧雰囲気に調整する。排気部１０５が処理容器１０２内を所定の減圧雰囲気に調整することにより、処理容器１０２は、真空引きされる。 An exhaust pipe 104 is connected to the bottom of the processing container 102 . An exhaust portion 105 is connected to the exhaust pipe 104 . The exhaust unit 105 has a vacuum pump such as a turbomolecular pump. The exhaust unit 105 adjusts the inside of the processing container 102 to a predetermined reduced-pressure atmosphere. The exhaust unit 105 adjusts the inside of the processing container 102 to a predetermined reduced-pressure atmosphere, thereby evacuating the processing container 102 .
　処理容器１０２の側壁には、搬出入口１０６が設けられている。基板Ｗやエッジリング１１９は、搬出入口１０６を介して処理容器１０２に搬出入される。搬出入口１０６には、ゲートバルブ１０８が設けられている。例えば、基板Ｗの搬入を行う場合、ゲートバルブ１０８が開く。そして、図示しない搬送アームが、搬出入口１０６を介して基板Ｗを搬入し、載置台１１０から上昇させた第１リフタピン１７２との間で基板Ｗの受け渡しを行う。また、エッジリング１１９の搬入を行う場合も、同様に、ゲートバルブ１０８が開く。そして、図示しない搬送アームが、搬出入口１０６を介してエッジリング１１９を搬入し、載置台１１０から上昇させた第２リフタピン１８２との間でエッジリング１１９の受け渡しを行う。基板Ｗやエッジリング１１９の搬出は、搬入の際の順序と逆の順序で実施する。 A loading/unloading port 106 is provided on the side wall of the processing container 102 . The substrate W and the edge ring 119 are loaded/unloaded into/from the processing chamber 102 through the loading/unloading port 106 . A gate valve 108 is provided at the loading/unloading port 106 . For example, when carrying in the substrate W, the gate valve 108 is opened. A transport arm (not shown) loads the substrate W through the loading/unloading port 106 and transfers the substrate W between the first lifter pins 172 raised from the mounting table 110 . Similarly, when the edge ring 119 is carried in, the gate valve 108 is opened. A transport arm (not shown) loads the edge ring 119 through the loading/unloading port 106 and transfers the edge ring 119 between the second lifter pins 182 raised from the mounting table 110 . The unloading of the substrate W and the edge ring 119 is carried out in the reverse order of the loading.
　上部電極１３０は、給電線により第１高周波電源１５０が接続されており、その給電線には、第１整合器１５２が介挿されている。第１高周波電源１５０は、５０～１５０ＭＨｚの範囲の周波数を有するプラズマ生成用の高周波電力を出力することが可能である。このように高い周波数の電力を上部電極１３０に印加することにより、処理容器１０２内には、好ましい解離状態でかつ高密度のプラズマを形成することができる。これにより、より低圧条件下のプラズマ処理が可能となる。第１高周波電源１５０の出力電力の周波数は、５０～８０ＭＨｚが好ましく、典型的には図示した６０ＭＨｚまたはその近傍の周波数に調整される。 A first high-frequency power supply 150 is connected to the upper electrode 130 via a feeder line, and a first matching device 152 is inserted in the feeder line. The first high-frequency power supply 150 can output high-frequency power for plasma generation having a frequency in the range of 50 to 150 MHz. By applying high-frequency power to the upper electrode 130 in this manner, high-density plasma can be formed in the processing container 102 in a preferred dissociated state. This enables plasma processing under lower pressure conditions. The frequency of the output power of the first high-frequency power supply 150 is preferably 50 to 80 MHz, and is typically adjusted to the illustrated 60 MHz or its vicinity.
　載置台１１０は、導電性の材料を含んで形成され、下部電極としての機能を有する。載置台１１０は、給電線により第２高周波電源１６０が接続されており、その給電線には第２整合器１６２が介挿されている。第２高周波電源１６０は、数百ｋＨｚ～十数ＭＨｚの範囲の周波数を有するバイアス用の高周波電力を出力することが可能である。第２高周波電源１６０の出力電力の周波数は、典型的には２ＭＨｚまたは１３．５６ＭＨｚ等に調整される。 The mounting table 110 is formed containing a conductive material and functions as a lower electrode. A second high-frequency power supply 160 is connected to the mounting table 110 via a feeder line, and a second matching device 162 is inserted in the feeder line. The second high-frequency power supply 160 is capable of outputting high-frequency bias power having a frequency in the range of several hundred kHz to ten and several MHz. The frequency of the output power of the second high frequency power supply 160 is typically adjusted to 2 MHz, 13.56 MHz, or the like.
　載置台１１０には、第１高周波電源１５０から流入する高周波電流を濾過するハイパスフィルタ（ＨＰＦ）１６４が接続されている。上部電極１３０には、第２高周波電源１６０から上部電極１３０に流入する高周波電流を濾過するローパスフィルタ（ＬＰＦ）１５４が接続されている。 A high-pass filter (HPF) 164 that filters the high-frequency current flowing from the first high-frequency power supply 150 is connected to the mounting table 110 . A low pass filter (LPF) 154 is connected to the upper electrode 130 to filter a high frequency current flowing into the upper electrode 130 from the second high frequency power supply 160 .
［リフタピンと駆動部の一例］
　上述したように、載置台１１０には、第１リフタピン１７２が第１載置面１１５ａから昇降自在に設けられるとともに、第２リフタピン１８２が第２載置面１１６ａから昇降自在に設けられている。第１リフタピン１７２と第２リフタピン１８２を昇降する構成は、略同様である。以下では、第１リフタピン１７２を昇降する構成について説明する。図２は、実施形態に係る載置台１１０の構成の一例を簡略化して示した図である。図２には、第１リフタピン１７２を昇降する構成が示されている。 [An example of a lifter pin and drive part]
As described above, on the mounting table 110, the first lifter pins 172 are provided to be vertically movable from the first mounting surface 115a, and the second lifter pins 182 are provided to be vertically movable from the second mounting surface 116a. The configuration for raising and lowering the first lifter pins 172 and the second lifter pins 182 is substantially the same. In the following, a configuration for raising and lowering the first lifter pins 172 will be described. FIG. 2 is a diagram showing a simplified example of the configuration of the mounting table 110 according to the embodiment. FIG. 2 shows a configuration for raising and lowering the first lifter pins 172 .
　載置台１１０は、載置部２００と、第１リフタピン１７２と、駆動部２０２とを有する。載置部２００には、基台２００ａと、支持部２００ｂが積層されて構成されている。なお、載置部２００は、その他の層を含んでもよい。また、載置部２００は、基台２００ａのみで構成されてもよい。 The mounting table 110 has a mounting portion 200 , first lifter pins 172 and a driving portion 202 . The mounting portion 200 is configured by stacking a base 200a and a support portion 200b. Note that the mounting section 200 may include other layers. Further, the mounting section 200 may be configured by only the base 200a.
　載置部２００は、支持する対象物が載置される第１面２１１及び当該第１面２１１の裏面となる第２面２１２が設けられている。第１面２１１は、基板載置部１１５においては基板Ｗを載置する第１載置面１１５ａとなり、外周部１１６においてはエッジリング１１９を載置する第２載置面１１６ａとなる。なお、基板載置部１１５において静電チャック１２０を設ける場合、第１面２１１上に静電チャック１２０が配置される。 The mounting portion 200 is provided with a first surface 211 on which an object to be supported is mounted and a second surface 212 which is the back surface of the first surface 211 . The first surface 211 serves as a first mounting surface 115a on which the substrate W is mounted on the substrate mounting portion 115, and serves as a second mounting surface 116a on which the edge ring 119 is mounted on the outer peripheral portion . Note that when the electrostatic chuck 120 is provided on the substrate mounting portion 115 , the electrostatic chuck 120 is arranged on the first surface 211 .
　載置部２００は、第１リフタピン１７２の配置位置に対応して、第１面２１１と第２面２１２に貫通する貫通穴２２１が形成されている。図２では、貫通穴２２１は、上下方向に形成されている。貫通穴２２１は、基台２００ａを貫通する貫通穴２２１ａと、支持部２００ｂを貫通する貫通穴２２１ｂに分かれている。貫通穴２２１ａと貫通穴２２１ｂは、同様に位置に形成されており、連通する。本実施形態では、貫通穴２２１ａは、貫通穴２２１ｂよりも径が若干大きく形成されている。 The mounting portion 200 has a through hole 221 penetrating through the first surface 211 and the second surface 212 corresponding to the arrangement position of the first lifter pin 172 . In FIG. 2, the through hole 221 is formed vertically. The through hole 221 is divided into a through hole 221a passing through the base 200a and a through hole 221b passing through the support portion 200b. The through hole 221a and the through hole 221b are formed at similar positions and communicate with each other. In this embodiment, the through hole 221a is formed to have a slightly larger diameter than the through hole 221b.
　載置台１１０が温度調整機構１１７を備える場合、基台２００ａ及び支持部２００ｂの何れかに温度調整機構１１７が設けられる。例えば、基台２００ａは、上述した流路１１８が形成される。基台２００ａは、流路１１８に温調流体を循環させることで、所定の温度に調整される。 When the mounting table 110 includes the temperature adjustment mechanism 117, the temperature adjustment mechanism 117 is provided on either the base 200a or the support portion 200b. For example, the base 200a is formed with the channel 118 described above. The base 200a is adjusted to a predetermined temperature by circulating the temperature control fluid in the flow path 118. As shown in FIG.
　第１リフタピン１７２は、貫通穴２２１に格納され、貫通穴２２１の軸方向に移動可能とされている。図２では、第１リフタピン１７２は、上下方向に移動可能とされている。 The first lifter pin 172 is housed in the through hole 221 and is movable in the axial direction of the through hole 221. In FIG. 2, the first lifter pin 172 is vertically movable.
　第１リフタピン１７２は、第１ピン部材２３１と、第２ピン部材２３２に分割されている。第１ピン部材２３１及び第２ピン部材２３２は、それぞれ所定の半径の棒状に形成されている。本実施形態では、第１ピン部材２３１は、第２ピン部材２３２よりも径が若干大きく形成されている。 The first lifter pin 172 is divided into a first pin member 231 and a second pin member 232. The first pin member 231 and the second pin member 232 are each formed in a bar shape with a predetermined radius. In this embodiment, the diameter of the first pin member 231 is slightly larger than that of the second pin member 232 .
　第１ピン部材２３１は、貫通穴２２１ａの長さよりも短く形成されている。第１ピン部材２３１は、貫通穴２２１ａに格納され、軸方向に移動可能とされている。基台２００ａは、第１ピン部材２３１の径よりも若干大きい径で貫通穴２２１ａが形成されている。 The first pin member 231 is formed shorter than the length of the through hole 221a. The first pin member 231 is housed in the through hole 221a and is movable in the axial direction. The base 200a is formed with a through hole 221a having a diameter slightly larger than the diameter of the first pin member 231. As shown in FIG.
　第２ピン部材２３２は、貫通穴２２１ｂの長さよりも十分に長く形成されている。第２ピン部材２３２は、貫通穴２２１ｂを貫くように貫通穴２２１ａに格納され、貫通穴２２１ａの軸方向に移動可能とされている。第２ピン部材２３２は、上端が貫通穴２２１ａに侵入して第１ピン部材２３１と接触しており、下端が貫通穴２２１ｂの下方まで到達する。支持部２００ｂ、第２ピン部材２３２の径と同程度又は若干大きい径で貫通穴２２１ｂが形成されている。支持部２００ｂは、第２ピン部材２３２と対向する貫通穴２２１ｂの周面にシールなどの封止部材２００ｃが設けられ、第２ピン部材２３２との隙間が封止されている。 The second pin member 232 is formed sufficiently longer than the length of the through hole 221b. The second pin member 232 is housed in the through hole 221a so as to pass through the through hole 221b, and is movable in the axial direction of the through hole 221a. The second pin member 232 has an upper end that enters the through hole 221a and is in contact with the first pin member 231, and a lower end that reaches below the through hole 221b. A through hole 221 b is formed with a diameter that is approximately the same as or slightly larger than the diameter of the support portion 200 b and the second pin member 232 . The supporting portion 200b is provided with a sealing member 200c such as a seal on the peripheral surface of the through hole 221b facing the second pin member 232 to seal the gap between the support portion 200b and the second pin member 232 .
　貫通穴２２１は、第１ピン部材２３１及び第２ピン部材２３２との接触面の摩擦や電気的な特性等を調整するため、内側面に沿ってスリーブが設けられていてもよい。例えば、貫通穴２２１ｂは、内側面に沿ってスリーブが設けられていてもよい。 A sleeve may be provided along the inner surface of the through hole 221 in order to adjust the friction, electrical characteristics, etc. of the contact surface with the first pin member 231 and the second pin member 232 . For example, the through hole 221b may be provided with a sleeve along the inner surface.
　駆動部２０２は、第２ピン部材２３２を軸方向に駆動する。駆動部２０２は、第１リフタピン１７２を保持する保持部２０２ａを有する。第２ピン部材２３２は、ネジが設けられた取付部２３２ａが下端に設けられている。第２ピン部材２３２は、取付部２３２ａのネジを保持部２０２ａにもうけられたネジ溝に結合させることにより、保持部２０２ａに固定される。駆動部２０２は、ＤＣモータ、ステッピングモータ、リニアモータ等のモータ、ピエゾアクチュエータ、エア駆動機構等の駆動力により保持部２０２ａが上下方向に駆動する。保持部２０２ａの上下方向の駆動に伴い、第２ピン部材２３２は、上下方向に駆動する。駆動部２０２は、各々、基板Ｗの搬送、及びエッジリング１１９の搬送に適合した駆動精度で第２ピン部材２３２を上下方向に駆動する。例えば、駆動部２０２は、基板Ｗをリフトアップする場合、第２ピン部材２３２を上方向に移動する。第２ピン部材２３２の上方向への移動により、第１ピン部材２３１は、第２ピン部材２３２に押されて上方向へ移動する。これにより、第１ピン部材２３１が第１面２１１から突出し、基板Ｗがリフトアップされる。また、駆動部２０２は、第１ピン部材２３１を貫通穴２２１に格納する場合、第２ピン部材２３２を貫通穴２２１の軸方向に第２面２１２側に駆動して、第１ピン部材２３１の第２面２１２側の端部から第２ピン部材２３２を離間させる。これにより、第１ピン部材２３１が貫通穴２２１内に下降して貫通穴２２１に格納される。 The driving part 202 drives the second pin member 232 in the axial direction. The drive section 202 has a holding section 202a that holds the first lifter pin 172 . The second pin member 232 has a mounting portion 232a provided with a screw at its lower end. The second pin member 232 is fixed to the holding portion 202a by coupling the screw of the mounting portion 232a to the thread groove provided in the holding portion 202a. The driving unit 202 vertically drives the holding unit 202a by a driving force of a motor such as a DC motor, a stepping motor, a linear motor, a piezo actuator, an air driving mechanism, or the like. As the holding portion 202a is driven vertically, the second pin member 232 is driven vertically. The drive unit 202 drives the second pin member 232 vertically with driving accuracy suitable for transporting the substrate W and transporting the edge ring 119 . For example, when the substrate W is lifted up, the drive unit 202 moves the second pin members 232 upward. As the second pin member 232 moves upward, the first pin member 231 is pushed by the second pin member 232 and moves upward. As a result, the first pin member 231 protrudes from the first surface 211 and the substrate W is lifted up. Further, when the first pin member 231 is stored in the through hole 221 , the driving section 202 drives the second pin member 232 toward the second surface 212 in the axial direction of the through hole 221 , thereby moving the first pin member 231 . The second pin member 232 is separated from the end on the second surface 212 side. As a result, the first pin member 231 descends into the through hole 221 and is stored in the through hole 221 .
　第１ピン部材２３１は、第１面２１１側の先端の幅を広げた蓋部２３１ｂが形成されている。第１ピン部材２３１は、ピン本体部２３１ａと、第１面２１１側の端部にピン本体部２３１ａの外径より大きい外径の蓋部２３１ｂを有する。ピン本体部２３１ａは、貫通穴２２１ａの径以下の径で形成されている。例えば、ピン本体部２３１ａは、貫通穴２２１ａの径以下の一定の径で形成されている。蓋部２３１ｂは、貫通穴２２１ａの径よりも大きい径で形成されている。第１ピン部材２３１は、蓋部２３１ｂが貫通穴２２１ａの径よりも大きい径であるため、蓋部２３１ｂの下端の位置までしか貫通穴２２１ａに格納できない。 The first pin member 231 is formed with a lid portion 231b having a wider tip on the first surface 211 side. The first pin member 231 has a pin main body portion 231a and a lid portion 231b having an outer diameter larger than the outer diameter of the pin main body portion 231a at the end on the first surface 211 side. The pin body portion 231a is formed with a diameter equal to or less than the diameter of the through hole 221a. For example, the pin body portion 231a is formed with a constant diameter equal to or less than the diameter of the through hole 221a. The lid portion 231b is formed with a diameter larger than the diameter of the through hole 221a. Since the diameter of the lid portion 231b is larger than the diameter of the through hole 221a, the first pin member 231 can be stored in the through hole 221a only up to the position of the lower end of the lid portion 231b.
　貫通穴２２１ａは、第１面２１１側の開口部に、第１ピン部材２３１が貫通穴２２１ａに格納された際に、蓋部２３１ｂと嵌合する凹部２２１ｃを有する。 The through hole 221a has a concave portion 221c in the opening on the first surface 211 side, which is fitted with the lid portion 231b when the first pin member 231 is stored in the through hole 221a.
　凹部２２１ｃは、第１ピン部材２３１が貫通穴２２１ａに格納されたとき、蓋部２３１ｂの上端が第１面２１１から突出しないように蓋部２３１ｂの厚さ以上の深さで形成されている。例えば、本実施形態では、蓋部２３１ｂは、先端から径が徐々に小さく形成されている。凹部２２１ｃは、蓋部２３１ｂと面が合うように、第１面２１１側から径が徐々に小さく形成されている。すなわち、蓋部２３１ｂは、先端から下側に徐々に径が細くなる円錐状に形成されている。凹部２２１ｃも、蓋部２３１ｂと同程度又は若干大きいサイズで、下側に徐々に径が細くなる円錐状に形成されている。これにより、第１ピン部材２３１を貫通穴２２１ａに格納した場合に、蓋部２３１ｂと凹部２２１ｃとが嵌合し、第１面２１１と蓋部２３１ｂの上面がほぼ平らな面を構成する。 The concave portion 221c is formed with a depth greater than the thickness of the lid portion 231b so that the upper end of the lid portion 231b does not protrude from the first surface 211 when the first pin member 231 is stored in the through hole 221a. For example, in the present embodiment, the lid portion 231b is formed such that the diameter gradually decreases from the tip. The diameter of the concave portion 221c is gradually reduced from the side of the first surface 211 so as to be flush with the lid portion 231b. That is, the lid portion 231b is formed in a conical shape whose diameter gradually decreases downward from the tip. The recessed portion 221c is also formed in a conical shape with a size approximately equal to or slightly larger than that of the lid portion 231b, and the diameter of the recessed portion 221c gradually decreases toward the lower side. As a result, when the first pin member 231 is stored in the through hole 221a, the lid portion 231b and the recessed portion 221c are engaged with each other, and the upper surfaces of the first surface 211 and the lid portion 231b form a substantially flat surface.
　第１ピン部材２３１が貫通穴２２１に格納されたとき、蓋部２３１ｂは、貫通穴２２１の第１面２１１側を覆って蓋をした状態となる。このように貫通穴２２１の第１面２１１側を蓋部２３１ｂで覆うことで、第１ピン部材２３１と貫通穴２２１と間の空間へのガスの侵入を抑制できるため、放電リスクを低減できる。 When the first pin member 231 is stored in the through hole 221, the lid portion 231b covers the first surface 211 side of the through hole 221 and becomes a lid. By covering the first surface 211 side of the through hole 221 with the lid portion 231b in this way, gas can be prevented from entering the space between the first pin member 231 and the through hole 221, thereby reducing the risk of discharge.
　ここで、従来、第１リフタピン１７２や第２リフタピン１８２は、分割されておらず、１つの部材として構成されている。しかし、従来のように第１リフタピン１７２や第２リフタピン１８２を１つの部材として構成した場合、第１リフタピン１７２や第２リフタピン１８２は、載置台１１０への取り付けが困難となる。第１リフタピン１７２や第２リフタピン１８２は、先端の幅を広げた蓋部２３１ｂを形成したことにより、貫通穴２２１に対して第１面２１１側からしか挿入できなくなる。第１リフタピン１７２や第２リフタピン１８２は、１つの部材として構成した場合、載置台１１０の貫通穴２２１に第１面２１１側から挿入してから、駆動部２０２に取り付けることになる。このような取り付けを実現するには、例えば、第１リフタピン１７２や第２リフタピン１８２の端部を自動でクランプする機構が駆動部２０２に必要となる。 Here, conventionally, the first lifter pin 172 and the second lifter pin 182 are not divided and are configured as one member. However, when the first lifter pins 172 and the second lifter pins 182 are configured as one member as in the conventional art, the first lifter pins 172 and the second lifter pins 182 are difficult to attach to the mounting table 110 . The first lifter pin 172 and the second lifter pin 182 can be inserted into the through hole 221 only from the first surface 211 side by forming the cover portion 231b with the widened tip. When the first lifter pin 172 and the second lifter pin 182 are configured as one member, they are inserted into the through hole 221 of the mounting table 110 from the first surface 211 side and then attached to the drive section 202 . In order to realize such attachment, for example, the driving section 202 requires a mechanism for automatically clamping the ends of the first lifter pins 172 and the second lifter pins 182 .
　一方、本実施形態に係る載置台１１０は、第１リフタピン１７２や第２リフタピン１８２を第１ピン部材２３１と第２ピン部材２３２に分割した構成としている。第１ピン部材２３１と第２ピン部材２３２は、接触するのみであるため、別々に載置台１１０に取り付けることができる。例えば、第１ピン部材２３１は、先端の幅を広げた蓋部２３１ｂを形成したことにより、貫通穴２２１に対して第１面２１１側からしか挿入できなくなる。しかし、本実施形態に係る載置台１１０は、第１ピン部材２３１と第２ピン部材２３２を別々に取り付けることで、容易に取り付けることができる。例えば、第２ピン部材２３２の一端を駆動部２０２に取り付けた後、第２ピン部材２３２の他端を載置台１１０の貫通穴２２１に第２面２１２側から挿入する。その後、第１ピン部材２３１を載置台１１０の貫通穴２２１に第１面２１１側から挿入する。本実施形態に係る載置台１１０では、第１ピン部材２３１は、駆動部２０２に固定する必要がない。このため、本実施形態に係る載置台１１０は、第１リフタピン１７２や第２リフタピン１８２を容易に取り付けることができる。 On the other hand, the mounting table 110 according to this embodiment has a configuration in which the first lifter pins 172 and the second lifter pins 182 are divided into the first pin members 231 and the second pin members 232 . Since the first pin member 231 and the second pin member 232 only contact each other, they can be separately attached to the mounting table 110 . For example, the first pin member 231 can be inserted into the through-hole 221 only from the first surface 211 side by forming the cover portion 231b with a widened tip. However, the mounting table 110 according to this embodiment can be easily attached by separately attaching the first pin member 231 and the second pin member 232 . For example, after attaching one end of the second pin member 232 to the drive unit 202 , the other end of the second pin member 232 is inserted into the through hole 221 of the mounting table 110 from the second surface 212 side. After that, the first pin member 231 is inserted into the through hole 221 of the mounting table 110 from the first surface 211 side. In the mounting table 110 according to this embodiment, the first pin member 231 does not need to be fixed to the drive section 202 . Therefore, the mounting table 110 according to the present embodiment can easily attach the first lifter pins 172 and the second lifter pins 182 .
　ところで、実施形態に係る載置台１１０は、基板Ｗやエッジリング１１９を上昇させる場合、駆動部２０２により第２ピン部材２３２の上方向へ移動させて、第２ピン部材２３２を介して第１ピン部材２３１を上方向へ移動する。また、載置台１１０は、基板Ｗやエッジリング１１９を下降させる場合、駆動部２０２により第２ピン部材２３２の下方向へ移動させ、第１ピン部材２３１を自重で下方向へ移動させる。第１ピン部材２３１と第２ピン部材２３２は、接触するのみで、接続していない。このため、第１ピン部材２３１は、貫通穴２２１との摩擦が強い場合や引っかかった場合、下降しなくなる。 By the way, in the mounting table 110 according to the embodiment, when the substrate W and the edge ring 119 are to be lifted, the drive unit 202 moves the second pin members 232 upward so that the first pins are moved through the second pin members 232 . Move the member 231 upward. When the substrate W and the edge ring 119 are to be lowered, the mounting table 110 moves the second pin members 232 downward by the drive unit 202 and moves the first pin members 231 downward by its own weight. The first pin member 231 and the second pin member 232 are only in contact and are not connected. For this reason, the first pin member 231 does not descend when the friction with the through hole 221 is strong or when the first pin member 231 is caught.
　そこで、第１ピン部材２３１を下降しやすくするため、第１ピン部材２３１は、密度が高い高密度材料を含んで構成としてもよい。 Therefore, in order to facilitate the descent of the first pin member 231, the first pin member 231 may include a high-density material.
　図３Ａ～図３Ｆは、実施形態に係る第１ピン部材２３１の構成の一例を簡略化して示した図である。図３Ａ～図３Ｃに示すように、第１ピン部材２３１は、ピン本体部２３１ａ及び蓋部２３１ｂを主に材料２３１ｃで形成し、主とする材料２３１ｃに高密度材料２３１ｄを内包するように構成してもよい。例えば、主とする材料２３１ｃとしては、例えば、Ａｌ（アルミニウム）、Ｔｉ（チタン）、ＰＥＥＫ（ポリエーテルエーテルケトン）等の樹脂が挙げられる。高密度材料２３１ｄとしては、例えば、Ｆｅ（鉄）、Ｗ（タングステン）、Ａｌが挙げられる。例えば、主とする材料２３１ｃをＡｌとし、高密度材料２３１ｄをＦｅとする。また、主とする材料２３１ｃをＴｉとし、高密度材料２３１ｄをＷとする。また、主とする材料２３１ｃをＰＥＥＫとし、高密度材料２３１ｄをＡｌとする。 3A to 3F are diagrams showing a simplified example of the configuration of the first pin member 231 according to the embodiment. As shown in FIGS. 3A to 3C, the first pin member 231 is configured such that a pin body portion 231a and a lid portion 231b are mainly made of a material 231c, and a high-density material 231d is included in the main material 231c. You may Examples of the main material 231c include resins such as Al (aluminum), Ti (titanium), and PEEK (polyetheretherketone). Examples of the high-density material 231d include Fe (iron), W (tungsten), and Al. For example, the main material 231c is Al and the high density material 231d is Fe. Also, Ti is used as the main material 231c, and W is used as the high-density material 231d. The main material 231c is PEEK, and the high-density material 231d is Al.
　第１ピン部材２３１は、材料２３１ｃと高密度材料２３１ｄを接着や接合して構成してもよい。図３Ｄでは、第１ピン部材２３１として、材料２３１ｃの下部に高密度材料２３１ｄを接着や接合している。図３Ｅでは、第１ピン部材２３１として、棒状の高密度材料２３１ｄの周囲に材料２３１ｃを接着や接合している。 The first pin member 231 may be configured by bonding or joining the material 231c and the high-density material 231d. In FIG. 3D, as the first pin member 231, a high density material 231d is adhered or bonded to the lower portion of the material 231c. In FIG. 3E, as the first pin member 231, a material 231c is adhered or joined around a rod-shaped high-density material 231d.
　また、第１ピン部材２３１は、ピン本体部２３１ａを高密度材料２３１ｄで構成してもよい。図３Ｆでは、ピン本体部２３１ａ全体が高密度材料２３１ｄで構成されている。 Further, the first pin member 231 may have the pin body portion 231a made of the high-density material 231d. In FIG. 3F, the entire pin body portion 231a is constructed of high density material 231d.
　このように、第１ピン部材２３１は、高密度材料２３１ｄを含んで構成することにより、自重が増加する。これにより、載置台１１０は、第１ピン部材２３１を下降しやすくすることができる。 In this way, the first pin member 231 increases its own weight by including the high-density material 231d. As a result, the mounting table 110 can facilitate the lowering of the first pin members 231 .
　また、第１ピン部材２３１を下降しやすくするため、第１ピン部材２３１を第２ピン部材２３２側に引き付けられる構成としてもよい。また、第１ピン部材２３１及び第２ピン部材２３２の一方は、他方を同一直線状で移動可能に保持するガイドを有する構成としてもよい。 Also, in order to facilitate the descent of the first pin member 231, the first pin member 231 may be drawn toward the second pin member 232 side. Also, one of the first pin member 231 and the second pin member 232 may be configured to have a guide that holds the other so as to be movable in the same straight line.
　図４～図６は、実施形態に係る第１ピン部材２３１及び第２ピン部材２３２の構成の一例を簡略化して示した図である。図４～図６には、実施形態に係る載置台１１０の構成が簡略化して示されている。図４～図６には、載置台１１０を構成する載置部２００と、第１リフタピン１７２が示されている。図４～図６では、載置部２００が１つの部材として示されている。載置部２００は、支持する対象物として基板Ｗを載置する第１面２１１が示されている。第１面２１１には、ドットのパターンが形成されており、ドットにより基板Ｗを支持する。第１面２１１と基板Ｗの間の空間には、伝熱ガス等のガスが供給される。載置部２００は、第１面２１１と第２面２１２に貫通する貫通穴２２１が形成されている。 4 to 6 are diagrams showing simplified examples of configurations of the first pin member 231 and the second pin member 232 according to the embodiment. 4 to 6 show a simplified configuration of the mounting table 110 according to the embodiment. 4 to 6 show the mounting portion 200 that constitutes the mounting table 110 and the first lifter pins 172. FIG. 4 to 6 show the mounting portion 200 as one member. The mounting portion 200 has a first surface 211 for mounting a substrate W as an object to be supported. A pattern of dots is formed on the first surface 211, and the substrate W is supported by the dots. The space between the first surface 211 and the substrate W is supplied with a gas such as a heat transfer gas. The mounting portion 200 is formed with a through hole 221 passing through the first surface 211 and the second surface 212 .
　図４では、第１ピン部材２３１と第２ピン部材２３２に磁石２３３ａ、２３３ｂを設けて磁力により第１ピン部材２３１と第２ピン部材２３２が引きつられるように構成している。例えば、第１ピン部材２３１は、第２ピン部材２３２側にＮ極の磁石２３３ａが設けられている。第２ピン部材２３２は、第１ピン部材２３１側にＳ極の磁石２３３ｂが設けられている。 In FIG. 4, the first pin member 231 and the second pin member 232 are provided with magnets 233a and 233b so that the first pin member 231 and the second pin member 232 are attracted by the magnetic force. For example, the first pin member 231 is provided with an N pole magnet 233a on the second pin member 232 side. The second pin member 232 is provided with an S pole magnet 233b on the first pin member 231 side.
　図５では、第１ピン部材２３１と第２ピン部材２３２をバネなどの弾性部材２３４により接続して第１ピン部材２３１と第２ピン部材２３２が引きつられるように構成している。例えば、第１ピン部材２３１の第２ピン部材２３２側の端部と、第２ピン部材２３２の第１ピン部材２３１側の端部は、弾性部材２３４により接続されている。弾性部材２３４は、バネに代わりにゴム等であってもよい。また、第１ピン部材２３１及び第２ピン部材２３２の一方には、他方を同一直線状で移動可能に保持するガイド２３５が設けられている。図５では、第２ピン部材２３２の上端部分に側面に沿って、ガイド２３５を設けられ、第１ピン部材２３１の下端部分をガイド２３５で囲んで同一直線状で移動可能に保持する。なお、第１ピン部材２３１の下端部分に側面に沿って、ガイド２３５を設けて、第２ピン部材２３２の上部部分をガイド２３５で囲んで同一直線状で移動可能に保持してもよい。図４及び図６の構成においても、ガイド２３５を設けてもよい。 In FIG. 5, the first pin member 231 and the second pin member 232 are connected by an elastic member 234 such as a spring so that the first pin member 231 and the second pin member 232 are pulled. For example, the end of the first pin member 231 on the second pin member 232 side and the end of the second pin member 232 on the first pin member 231 side are connected by an elastic member 234 . The elastic member 234 may be rubber or the like instead of the spring. Also, one of the first pin member 231 and the second pin member 232 is provided with a guide 235 that holds the other movably in the same straight line. In FIG. 5, a guide 235 is provided along the upper end portion of the second pin member 232 along the side surface, and the lower end portion of the first pin member 231 is surrounded by the guide 235 and held movably in the same straight line. A guide 235 may be provided along the side surface of the lower end portion of the first pin member 231, and the upper portion of the second pin member 232 may be surrounded by the guide 235 and held so as to be movable in the same straight line. A guide 235 may be provided in the configurations of FIGS. 4 and 6 as well.
　図６では、第１ピン部材２３１と第２ピン部材２３２を連結部２４０により連結して第１ピン部材２３１と第２ピン部材２３２が引きつられるように構成している。例えば、第１ピン部材２３１は、第２ピン部材２３２側の端部に連結用の凹部２４１が形成されている。凹部２４１は、開口側が狭く形成されている。第２ピン部材２３２は、第１ピン部材２３１側の端部に連結用の係合部２４２が形成されている。凹部２４１に係合部２４２を係合させることで、第１ピン部材２３１と第２ピン部材２３２が連結される。連結部２４０は、凹部２４１と係合部２４２が係合する部分にバネなどの弾性部材２４３を設けて、反力で下方向に応力を加えてもよい。 In FIG. 6, the first pin member 231 and the second pin member 232 are connected by a connecting portion 240 so that the first pin member 231 and the second pin member 232 are pulled. For example, the first pin member 231 has a recess 241 for connection formed at the end on the second pin member 232 side. The concave portion 241 is formed narrow on the opening side. The second pin member 232 has an engaging portion 242 for connection formed at the end on the first pin member 231 side. By engaging the engaging portion 242 with the concave portion 241, the first pin member 231 and the second pin member 232 are connected. The connecting portion 240 may be provided with an elastic member 243 such as a spring at the portion where the recessed portion 241 and the engaging portion 242 are engaged to apply downward stress with a reaction force.
　第１ピン部材２３１及び第２ピン部材２３２を図４～図６のような構成とすることにより、載置台１１０は、駆動部２０２により第２ピン部材２３２の下降させることで、第１ピン部材２３１を下方向へ引くことができる。このように、載置台１１０は、第１ピン部材２３１を第２ピン部材２３２側に引く構成とすることで、第１ピン部材２３１を下降しやすくすることができる。なお、磁石２３３ａ、２３３ｂのうちいずれか一方が磁石であり、他方が鉄（Ｆｅ）やニッケル（Ｎｉ）などの磁性体であってもよい。また、磁石２３３ａ、２３３ｂのうち少なくとも一方が電磁石であってもよい。電磁石の場合は、磁力や極性を切り替えることが可能であるため、引力または斥力によって降下速度を調整することが可能である。また、電磁石からの漏れ磁場によるプラズマ生成の均一性への影響する虞があるため、駆動部２０２を稼働させず、プラズマ生成を行うときは、電磁石の電源をオフにして、磁力を発生させないことが望ましい。 By configuring the first pin member 231 and the second pin member 232 as shown in FIGS. 4 to 6, the mounting table 110 can be moved by lowering the second pin member 232 by the driving unit 202 so that the first pin member 231 can be pulled downward. In this manner, the mounting table 110 is configured to pull the first pin member 231 toward the second pin member 232, so that the first pin member 231 can be easily lowered. One of the magnets 233a and 233b may be a magnet, and the other may be a magnetic material such as iron (Fe) or nickel (Ni). At least one of the magnets 233a and 233b may be an electromagnet. In the case of an electromagnet, since it is possible to switch the magnetic force and polarity, it is possible to adjust the descent speed by attractive force or repulsive force. In addition, since the uniformity of plasma generation may be affected by the leakage magnetic field from the electromagnet, when plasma generation is performed without operating the driving unit 202, the power of the electromagnet should be turned off to prevent the generation of magnetic force. is desirable.
　なお、第１ピン部材２３１を下方向へ引く力を有する構造であれば、実施形態に示す自重、磁力、バネおよびひもに限定されない。例えば、第１ピン部材２３１および第２ピン部材２３２の内部に電極を埋め込み、その電極に電荷を帯電させることよって生じるクーロン力やジョンソンラーベック力などの静電力によって、第１ピン部材２３１を第２ピン部材２３２側に引く構成としてもよい。 It should be noted that the structure is not limited to the dead weight, magnetic force, spring, and string shown in the embodiment, as long as it has a force that pulls the first pin member 231 downward. For example, electrodes are embedded inside the first pin member 231 and the second pin member 232, and an electrostatic force such as a Coulomb force or a Johnson-Rahbek force generated by electrifying the electrodes causes the first pin member 231 to move toward the first pin member 231. It is good also as a structure pulled to the 2 pin member 232 side.
　また、第１ピン部材２３１は、第１面２１１側の先端に位置決め用の突起を設けてもよい。図７Ａ～図７Ｃは、実施形態に係る第１ピン部材２３１の形状の一例を説明する図である。図７Ａでは、第１ピン部材２３１は、第１面２１１側の先端の幅を広げた蓋部２３１ｂの上面の中央に位置決め用の半球状の突起２３１ｅを設けている。図７Ａでは、第１ピン部材２３１は、蓋部２３１ｂの上面の中央に位置決め用の矩形状の突起２３１ｅを設けている。図７ｃは、貫通穴２２１の第１面２１１側を第１ピン部材２３１で覆って蓋をした状態を示している。貫通穴２２１は、第１ピン部材２３１の上面が第１面２１１から突出しないように第１面２１１側に凹部２２１ｃを設けている。第１ピン部材２３１は、突起２３１ｅを設けているため、基板Ｗやエッジリング１１９を精度よく配置できる。基板Ｗやエッジリング１１９には、第１ピン部材２３１の位置に対応して位置決め用の凹部を設けてもよい。これにより、基板Ｗやエッジリング１１９を精度よく配置できる。 Also, the first pin member 231 may be provided with a positioning projection at the tip on the first surface 211 side. 7A to 7C are diagrams explaining an example of the shape of the first pin member 231 according to the embodiment. In FIG. 7A, the first pin member 231 has a hemispherical projection 231e for positioning at the center of the upper surface of the lid portion 231b having a wider tip on the first surface 211 side. In FIG. 7A, the first pin member 231 has a positioning rectangular projection 231e at the center of the upper surface of the lid portion 231b. FIG. 7c shows a state in which the through hole 221 on the side of the first surface 211 is covered with the first pin member 231 as a lid. The through hole 221 has a concave portion 221 c on the first surface 211 side so that the upper surface of the first pin member 231 does not protrude from the first surface 211 . Since the first pin member 231 is provided with the protrusion 231e, the substrate W and the edge ring 119 can be arranged with high precision. The substrate W and the edge ring 119 may be provided with recesses for positioning corresponding to the positions of the first pin members 231 . Thereby, the substrate W and the edge ring 119 can be arranged with high accuracy.
［効果］
　このように、実施形態に係る載置台１１０は、載置部２００と、第１ピン部材２３１と、第２ピン部材２３２と、駆動部２０２とを有する。載置部２００は、支持する対象物（基板Ｗ、エッジリング１１９）が載置される第１面２１１及び当該第１面２１１の裏面となる第２面２１２が設けられ、第１面２１１と第２面２１２に貫通する貫通穴２２１が形成されている。第１ピン部材２３１は、貫通穴２２１に配置され、貫通穴２２１の軸方向に移動可能とされている。第２ピン部材２３２は、貫通穴２２１の第１ピン部材２３１に対して第２面２１２側に配置され、軸方向に移動可能とされている。駆動部２０２は、第２ピン部材２３２を軸方向に駆動する。そして、第１ピン部材２３１は、第１面２１１側の先端の幅を広げた蓋部２３１ｂが形成されている。貫通穴２２１は、第１面２１１側の開口部に、第１ピン部材２３１が貫通穴２２１に格納された際に、蓋部２３１ｂと嵌合する凹部２２１ｃを有する。これにより、載置台１１０は、貫通穴２２１のリフタピン（第１リフタピン１７２、第２リフタピン１８２）との隙間での異常放電の発生を抑制しつつ、リフタピンの取り付けを容易にすることができる。 [effect]
Thus, the mounting table 110 according to the embodiment has the mounting section 200 , the first pin members 231 , the second pin members 232 and the driving section 202 . The mounting portion 200 is provided with a first surface 211 on which an object to be supported (the substrate W and the edge ring 119) is mounted and a second surface 212 which is the back surface of the first surface 211. A through hole 221 is formed through the second surface 212 . The first pin member 231 is arranged in the through hole 221 and is movable in the axial direction of the through hole 221 . The second pin member 232 is arranged on the second surface 212 side with respect to the first pin member 231 of the through hole 221 and is movable in the axial direction. The driving portion 202 axially drives the second pin member 232 . The first pin member 231 is formed with a lid portion 231b having a wider tip on the first surface 211 side. The through-hole 221 has a concave portion 221c in the opening on the first surface 211 side, which is fitted with the lid portion 231b when the first pin member 231 is stored in the through-hole 221 . As a result, the mounting table 110 can facilitate attachment of the lifter pins while suppressing the occurrence of abnormal discharge in the gaps between the through holes 221 and the lifter pins (the first lifter pins 172 and the second lifter pins 182).
　また、第１ピン部材２３１は、第２ピン部材２３２側に引き付けられる構成とされている。これにより、載置台１１０は、駆動部２０２により第２ピン部材２３２を第２面２１２側に移動させることで、第１ピン部材２３１を貫通穴２２１内で第２面２１２側へ安定して移動させることができる。また、載置台１１０は、第１ピン部材２３１を貫通穴２２１内に格納した際に、蓋部２３１ｂと凹部２２１ｃを密着させることができ、第１ピン部材２３１と貫通穴２２１と間の空間へのガスの侵入を抑制できる。 Also, the first pin member 231 is configured to be attracted to the second pin member 232 side. As a result, the mounting table 110 moves the first pin member 231 to the second surface 212 side in the through hole 221 stably by moving the second pin member 232 to the second surface 212 side by the driving unit 202 . can be made Further, when the first pin member 231 is stored in the through hole 221, the mounting table 110 can bring the lid portion 231b and the recessed portion 221c into close contact with each other. of gas can be suppressed.
　また、第１ピン部材２３１は、第２ピン部材２３２側に第１の磁石（磁石２３３ａ）が設けられている。第２ピン部材２３２は、第１ピン部材２３１側に第１の磁石と引き合う第２の磁石（磁石２３３ｂ）が設けられている。これにより、載置台１１０は、第２ピン部材２３２と第１ピン部材２３１を物理的に接続することなく、第２ピン部材２３２が第１ピン部材２３１を引き付けることができる。 Also, the first pin member 231 is provided with a first magnet (magnet 233a) on the second pin member 232 side. The second pin member 232 is provided with a second magnet (magnet 233b) that attracts the first magnet on the first pin member 231 side. Accordingly, the mounting table 110 allows the second pin member 232 to attract the first pin member 231 without physically connecting the second pin member 232 and the first pin member 231 .
　また、第１ピン部材２３１の第２ピン部材２３２側の端部と、第２ピン部の第１ピン部材２３１側の端部は、弾性部材２３４により接続されている。これにより、載置台１１０は、第２ピン部材２３２が第１ピン部材２３１を引き付けることができる。 The end of the first pin member 231 on the second pin member 232 side and the end of the second pin portion on the first pin member 231 side are connected by an elastic member 234 . As a result, the mounting table 110 allows the second pin member 232 to attract the first pin member 231 .
　また、第１ピン部材２３１は、密度の高い高密度材料２３１ｄを含んで構成される。これにより、載置台１１０は、第１ピン部材２３１を下降しやすくすることができる。 In addition, the first pin member 231 includes a high-density material 231d. As a result, the mounting table 110 can facilitate the lowering of the first pin members 231 .
　また、第１ピン部材２３１は、貫通穴２２１の径以下の径で形成されたピン本体部２３１ａの第１面２１１側の先端に貫通穴２２１の径よりも大きい径で蓋部２３１ｂが形成されている。これにより、載置台１１０は、第１ピン部材２３１を貫通穴２２１に格納した際に、蓋部２３１ｂで貫通穴２２１の第１面２１１側を覆って貫通穴２２１を閉塞することができ、第１ピン部材２３１と貫通穴２２１と間の空間へのガスの侵入を抑制できる。 The first pin member 231 has a pin main body 231a formed with a diameter equal to or smaller than the diameter of the through hole 221, and a lid portion 231b having a diameter larger than the diameter of the through hole 221 is formed at the tip of the first surface 211 side. ing. As a result, when the first pin member 231 is stored in the through hole 221, the mounting table 110 can cover the first surface 211 side of the through hole 221 with the lid portion 231b to close the through hole 221. Intrusion of gas into the space between the 1-pin member 231 and the through hole 221 can be suppressed.
　また、蓋部２３１ｂは、先端から径が徐々に小さく形成されている。凹部２２１ｃは、蓋部２３１ｂと面が合うように、第１面２１１側から径が徐々に小さく形成されている。これにより、載置台１１０は、蓋部２３１ｂと凹部２２１ｃを密接させることができ、第１ピン部材２３１と貫通穴２２１と間の空間へのガスの侵入を抑制できる。 In addition, the diameter of the lid portion 231b is gradually reduced from the tip. The diameter of the concave portion 221c is gradually reduced from the side of the first surface 211 so as to be flush with the lid portion 231b. Accordingly, the mounting table 110 can bring the lid portion 231 b and the recessed portion 221 c into close contact with each other, and can suppress gas from entering the space between the first pin member 231 and the through hole 221 .
　また、第１ピン部材２３１及び第２ピン部材２３２の一方は、他方を同一直線状で移動可能に保持するガイド２３５を有する。これにより、載置台１１０は、第１ピン部材２３１と第２ピン部材２３２を同一直線状に移動しやすい状態で保持できる。 Also, one of the first pin member 231 and the second pin member 232 has a guide 235 that holds the other movably in the same straight line. Thereby, the mounting table 110 can hold the first pin member 231 and the second pin member 232 in a state where they can be easily moved in the same straight line.
　また、駆動部２０２は、第１ピン部材２３１を貫通穴２２１に格納する場合、第２ピン部材２３２を軸方向に第２面２１２側に駆動して、第１ピン部材２３１の第２面２１２側の端部から第２ピン部材２３２を離間させる。駆動部２０２は、第１ピン部材２３１を貫通穴２２１から突出させる際に、第２ピン部材２３２を軸方向に第１面２１１側に駆動して、第１ピン部材２３１の第２面２１２側の端部に第２ピン部材２３２を接触させる。これにより、載置台１１０は、第１ピン部材２３１を第１面２１１から昇降させることができ、第１面２１１に載置された対象物を安定して昇降することができる。 In addition, when the first pin member 231 is stored in the through hole 221 , the driving section 202 drives the second pin member 232 in the axial direction toward the second surface 212 so that the second surface 212 of the first pin member 231 moves toward the second surface 212 . The second pin member 232 is spaced from the side end. When projecting the first pin member 231 from the through hole 221 , the driving section 202 drives the second pin member 232 in the axial direction toward the first surface 211 so that the first pin member 231 moves toward the second surface 212 . The second pin member 232 is brought into contact with the end of the . As a result, the mounting table 110 can raise and lower the first pin member 231 from the first surface 211 and stably raise and lower the object placed on the first surface 211 .
　以上、実施形態について説明してきたが、今回開示された実施形態は、全ての点で例示であって制限的なものではないと考えられるべきである。実に、上述した実施形態は、多様な形態で具現され得る。また、上述した実施形態は、請求の範囲及びその趣旨を逸脱することなく、様々な形態で省略、置換、変更されてもよい。 Although the embodiment has been described above, it should be considered that the embodiment disclosed this time is illustrative in all respects and not restrictive. Indeed, the above-described embodiments may be embodied in many different forms. Moreover, the embodiments described above may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the claims.
　例えば、上記の実施形態では、基板処理をプラズマエッチングとした場合を例に説明した。しかし、これに限定されるものではない。基板処理は、載置台に対象物を載置して実施する基板処理であれば、どのような基板処理であってもよい。 For example, in the above embodiment, the substrate processing is plasma etching. However, it is not limited to this. Any substrate processing may be used as long as the substrate processing is carried out by placing an object on a mounting table.
　また、上記の実施形態では、基板処理装置１００を、容量結合プラズマ（ＣＣＰ：Capacitively　Coupled　Plasma）タイプのプラズマ処理装置とした場合を説明した。しかし、これに限定されるものではない。基板処理装置１００は、基板処理を実施する装置であれば、どのような装置であってもよい。例えば、基板処理装置１００は、誘導結合型プラズマ（ＩＣＰ：Inductively-coupled　plasma）、容量結合型プラズマ（ＣＣＰ）、ＥＣＲプラズマ（electron-cyclotron-resonance　plasma）、ヘリコン波励起プラズマ（ＨＷＰ）、または、表面波プラズマ（ＳＷＰ）等を利用する装置であってもよい。 Also, in the above embodiment, the case where the substrate processing apparatus 100 is a capacitively coupled plasma (CCP) type plasma processing apparatus has been described. However, it is not limited to this. The substrate processing apparatus 100 may be any apparatus as long as it performs substrate processing. For example, the substrate processing apparatus 100 uses inductively-coupled plasma (ICP), capacitively-coupled plasma (CCP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave excited plasma (HWP), or A device using surface wave plasma (SWP) or the like may also be used.
　また、上記の実施形態では、基板Ｗを半導体ウエハとした場合を例に説明したが、これに限定されるものではない。基板Ｗは、何れの基板でもよい。 Also, in the above embodiment, the case where the substrate W is a semiconductor wafer has been described as an example, but it is not limited to this. The substrate W can be any substrate.
　なお、今回開示された実施形態は全ての点で例示であって制限的なものではないと考えられるべきである。実に、上記した実施形態は多様な形態で具現され得る。また、上記の実施形態は、添付の特許請求の範囲及びその趣旨を逸脱することなく、様々な形態で省略、置換、変更されてもよい。 It should be noted that the embodiments disclosed this time should be considered as examples in all respects and not restrictive. Indeed, the above-described embodiments may be embodied in many different forms. Also, the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.
　なお、以上の実施形態に関し、さらに以下の付記を開示する。 In addition, regarding the above embodiment, the following additional remarks are disclosed.
（付記１）
　支持する対象物が載置される第１面及び当該第１面の裏面となる第２面が設けられ、前記第１面と前記第２面に貫通する貫通穴が形成された載置部と、
　前記貫通穴に配置され、前記貫通穴の軸方向に移動可能とされた第１ピン部材と、
　前記貫通穴の前記第１ピン部材に対して前記第２面側に配置され、前記軸方向に移動可能とされた第２ピン部材と、
　前記第２ピン部材を前記軸方向に駆動する駆動部と、
　を有し、
　前記第１ピン部材は、前記第１面側の先端の幅を広げた蓋部が形成され、
　前記貫通穴は、前記第１面側の開口部に、前記第１ピン部材が前記貫通穴に格納された際に、前記蓋部と嵌合する凹部を有する、
　載置台。 (Appendix 1)
a placement portion provided with a first surface on which an object to be supported is placed and a second surface serving as the back surface of the first surface, and a through hole formed through the first surface and the second surface; ,
a first pin member disposed in the through hole and movable in the axial direction of the through hole;
a second pin member disposed on the second surface side of the through hole with respect to the first pin member and movable in the axial direction;
a drive unit that drives the second pin member in the axial direction;
has
The first pin member is formed with a lid portion having a widened tip on the first surface side,
The through-hole has a recess in the opening on the first surface side, which is fitted with the lid when the first pin member is stored in the through-hole,
Mounting table.
（付記２）
　前記第１ピン部材は、前記第２ピン部材側に引き付けられる構成とした、
　付記１に記載の載置台。 (Appendix 2)
The first pin member is configured to be attracted to the second pin member side,
The mounting table according to appendix 1.
（付記３）
　前記第１ピン部材は、前記第２ピン部材側に第１の磁石が設けられ、
　前記第２ピン部材は、前記第１ピン部材側に前記第１の磁石と引き合う第２の磁石が設けられた、
　付記１又は２に記載の載置台。 (Appendix 3)
The first pin member is provided with a first magnet on the second pin member side,
The second pin member is provided with a second magnet that attracts the first magnet on the first pin member side,
The mounting table according to appendix 1 or 2.
（付記４）
　前記第１ピン部材の前記第２ピン部材側の端部と、前記第２ピン部の前記第１ピン部材側の端部は、弾性部材により接続された
　付記１又は２に記載の載置台。 (Appendix 4)
The mounting table according to appendix 1 or 2, wherein an end portion of the first pin member on the side of the second pin member and an end portion of the second pin portion on the side of the first pin member are connected by an elastic member.
（付記５）
　前記第１ピン部材は、密度の高い高密度材料を含んで構成された
　付記１～４の何れか１つに記載の載置台。 (Appendix 5)
The mounting table according to any one of Appendices 1 to 4, wherein the first pin member includes a high-density material.
（付記６）
　前記第１ピン部材は、前記貫通穴の径以下の径で形成されたピン本体部の前記第１面側の先端に前記貫通穴の径よりも大きい径で前記蓋部が形成された
　付記１～５の何れか１つに記載の載置台。 (Appendix 6)
In the first pin member, the lid portion is formed with a diameter larger than the diameter of the through hole at a tip of the pin main body portion formed with a diameter equal to or smaller than the diameter of the through hole on the side of the first surface. 6. The mounting table according to any one of 1 to 5.
（付記７）
　前記蓋部は、先端から径が徐々に小さく形成され、
　前記凹部は、前記蓋部と面が合うように、前記第１面側から径が徐々に小さく形成された
　付記１～６の何れか１つに記載の載置台。 (Appendix 7)
The lid portion is formed such that the diameter gradually decreases from the tip,
7. The mounting table according to any one of Appendices 1 to 6, wherein the diameter of the concave portion is gradually reduced from the first surface side so as to be flush with the lid portion.
（付記８）
　前記第１ピン部材及び前記第２ピン部材の一方は、他方を同一直線状で移動可能に保持するガイドを有する
　付記１～７の何れか１つに記載の載置台。 (Appendix 8)
The mounting table according to any one of Appendices 1 to 7, wherein one of the first pin member and the second pin member has a guide that holds the other movably in a same straight line.
（付記９）
　前記駆動部は、前記第１ピン部材を前記貫通穴に格納する場合、前記第２ピン部材を前記軸方向に前記第２面側に駆動して、前記第１ピン部材の前記第２面側の端部から前記第２ピン部材を離間させ、前記第１ピン部材を前記貫通穴から突出させる際に、前記第２ピン部材を前記軸方向に前記第１面側に駆動して、前記第１ピン部材の前記第２面側の端部に前記第２ピン部材を接触させる
　付記１～８の何れか１つに記載の載置台。 (Appendix 9)
When the first pin member is housed in the through hole, the drive unit drives the second pin member in the axial direction toward the second surface, thereby moving the first pin member toward the second surface. When moving the second pin member away from the end of the first pin member to protrude from the through hole, the second pin member is driven in the axial direction toward the first surface, 9. The mounting table according to any one of Appendices 1 to 8, wherein the second pin member is brought into contact with the end portion of the first pin member on the second surface side.
（付記１０）
　プラズマ処理が実施される処理容器と、
　付記１～９の何れか１つに記載の載置台であって、前記処理容器内に配置され
処理対象の基板が載置される載置台と、
　を有する基板処理装置。 (Appendix 10)
a processing container in which plasma processing is performed;
a mounting table according to any one of Appendices 1 to 9, wherein the mounting table is arranged in the processing container and on which a substrate to be processed is mounted;
A substrate processing apparatus having
Ｗ　基板
１００　基板処理装置
１１０　載置台
１１９　エッジリング
１１５ａ　第１載置面
１１６ａ　第２載置面
１７２　第１リフタピン
１８２　第２リフタピン
２００　載置部
２００ａ　基台
２００ｂ　支持部
２０２　駆動部
２０２ａ　保持部
２３１　第１ピン部材
２３２　第２ピン部材
２１１　第１面
２１２　第２面
２２１　貫通穴
２２１ａ、２２１ｂ　貫通穴
２３１ｂ　蓋部
２２１ｃ　凹部
２３３ａ、２３３ｂ　磁石
２３１ｄ　高密度材料
２３４　弾性部材
２３５　ガイド W substrate 100 substrate processing apparatus 110 mounting table 119 edge ring 115a first mounting surface 116a second mounting surface 172 first lifter pin 182 second lifter pin 200 mounting portion 200a base 200b supporting portion 202 driving portion 202a holding portion 231 1 pin member 232 2nd pin member 211 1st surface 212 2nd surface 221 through holes 221a, 221b through hole 231b lid 221c recesses 233a, 233b magnet 231d high density material 234 elastic member 235 guide

Claims (10)

  1. 　支持する対象物が載置される第１面及び当該第１面の裏面となる第２面が設けられ、前記第１面と前記第２面に貫通する貫通穴が形成された載置部と、
    　前記貫通穴に配置され、前記貫通穴の軸方向に移動可能とされた第１ピン部材と、
    　前記貫通穴の前記第１ピン部材に対して前記第２面側に配置され、前記軸方向に移動可能とされた第２ピン部材と、
    　前記第２ピン部材を前記軸方向に駆動する駆動部と、
    　を有し、
    　前記第１ピン部材は、前記第１面側の先端の幅を広げた蓋部が形成され、
    　前記貫通穴は、前記第１面側の開口部に、前記第１ピン部材が前記貫通穴に格納された際に、前記蓋部と嵌合する凹部を有する、
    　載置台。     a placement portion provided with a first surface on which an object to be supported is placed and a second surface serving as the back surface of the first surface, and a through hole formed through the first surface and the second surface; ,
    a first pin member disposed in the through hole and movable in the axial direction of the through hole;
    a second pin member disposed on the second surface side of the through hole with respect to the first pin member and movable in the axial direction;
    a drive unit that drives the second pin member in the axial direction;
    has
    The first pin member is formed with a lid portion having a widened tip on the first surface side,
    The through-hole has a recess in the opening on the first surface side, which is fitted with the lid when the first pin member is stored in the through-hole,
    Mounting table.
  2. 　前記第１ピン部材は、前記第２ピン部材側に引き付けられる構成とした、
    　請求項１に記載の載置台。     The first pin member is configured to be attracted to the second pin member side,
    The mounting table according to claim 1.
  3. 　前記第１ピン部材は、前記第２ピン部材側に第１の磁石が設けられ、
    　前記第２ピン部材は、前記第１ピン部材側に前記第１の磁石と引き合う第２の磁石が設けられた、
    　請求項１に記載の載置台。     The first pin member is provided with a first magnet on the second pin member side,
    The second pin member is provided with a second magnet that attracts the first magnet on the first pin member side,
    The mounting table according to claim 1.
  4. 　前記第１ピン部材の前記第２ピン部材側の端部と、前記第２ピン部の前記第１ピン部材側の端部は、弾性部材により接続された
    　請求項１に記載の載置台。     The mounting table according to claim 1, wherein an end portion of the first pin member on the side of the second pin member and an end portion of the second pin portion on the side of the first pin member are connected by an elastic member.
  5. 　前記第１ピン部材は、密度の高い高密度材料を含んで構成された
    　請求項１に記載の載置台。     The mounting table according to claim 1, wherein the first pin member is configured to contain a high-density material.
  6. 　前記第１ピン部材は、前記貫通穴の径以下の径で形成されたピン本体部の前記第１面側の先端に前記貫通穴の径よりも大きい径で前記蓋部が形成された
    　請求項１に記載の載置台。     The first pin member has a pin main body portion formed with a diameter equal to or less than the diameter of the through hole, and the cover portion having a diameter larger than the diameter of the through hole is formed at a tip of the first surface side of the pin body portion. 1. The mounting table according to 1.
  7. 　前記蓋部は、先端から径が徐々に小さく形成され、
    　前記凹部は、前記蓋部と面が合うように、前記第１面側から径が徐々に小さく形成された
    　請求項１に記載の載置台。     The lid portion is formed such that the diameter gradually decreases from the tip,
    The mounting table according to claim 1, wherein the diameter of the concave portion is gradually reduced from the first surface side so as to be flush with the lid portion.
  8. 　前記第１ピン部材及び前記第２ピン部材の一方は、他方を同一直線状で移動可能に保持するガイドを有する
    　請求項１に記載の載置台。     2. The mounting table according to claim 1, wherein one of the first pin member and the second pin member has a guide that holds the other movably in a same straight line.
  9. 　前記駆動部は、前記第１ピン部材を前記貫通穴に格納する場合、前記第２ピン部材を前記軸方向に前記第２面側に駆動して、前記第１ピン部材の前記第２面側の端部から前記第２ピン部材を離間させ、前記第１ピン部材を前記貫通穴から突出させる際に、前記第２ピン部材を前記軸方向に前記第１面側に駆動して、前記第１ピン部材の前記第２面側の端部に前記第２ピン部材を接触させる
    　請求項１に記載の載置台。     When the first pin member is housed in the through hole, the drive unit drives the second pin member in the axial direction toward the second surface, thereby moving the first pin member toward the second surface. When moving the second pin member away from the end of the first pin member to protrude from the through hole, the second pin member is driven in the axial direction toward the first surface, The mounting table according to claim 1, wherein the second pin member is brought into contact with the end of the one pin member on the second surface side.
  10. 　プラズマ処理が実施される処理容器と、
    　請求項１～９の何れか１つに記載の載置台であって、前記処理容器内に配置され
    処理対象の基板が載置される載置台と、
    　を有する基板処理装置。     a processing container in which plasma processing is performed;
    The mounting table according to any one of claims 1 to 9, wherein the mounting table is arranged in the processing container and on which a substrate to be processed is mounted;
    A substrate processing apparatus having
PCT/JP2022/023935 2021-06-22 2022-06-15 Mounting table and substrate processing device WO2022270376A1 (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003197719A (en) * 2001-12-21 2003-07-11 Komatsu Electronic Metals Co Ltd Device for manufacturing semiconductor and structure for supporting substrate
JP2004349516A (en) * 2003-05-23 2004-12-09 Hitachi High-Technologies Corp Substrate processor
WO2007077765A1 (en) * 2005-12-28 2007-07-12 Sharp Kabushiki Kaisha Stage apparatus and plasma processing apparatus
WO2009034895A1 (en) * 2007-09-11 2009-03-19 Tokyo Electron Limited Substrate placing mechanism and substrate processing apparatus
JP2013058690A (en) * 2011-09-09 2013-03-28 Chugai Ro Co Ltd Substrate supply device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003197719A (en) * 2001-12-21 2003-07-11 Komatsu Electronic Metals Co Ltd Device for manufacturing semiconductor and structure for supporting substrate
JP2004349516A (en) * 2003-05-23 2004-12-09 Hitachi High-Technologies Corp Substrate processor
WO2007077765A1 (en) * 2005-12-28 2007-07-12 Sharp Kabushiki Kaisha Stage apparatus and plasma processing apparatus
WO2009034895A1 (en) * 2007-09-11 2009-03-19 Tokyo Electron Limited Substrate placing mechanism and substrate processing apparatus
JP2013058690A (en) * 2011-09-09 2013-03-28 Chugai Ro Co Ltd Substrate supply device

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