WO2022267584A1 - 一种基于cmos工艺的多层结构的红外探测器 - Google Patents

一种基于cmos工艺的多层结构的红外探测器 Download PDF

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Publication number
WO2022267584A1
WO2022267584A1 PCT/CN2022/082854 CN2022082854W WO2022267584A1 WO 2022267584 A1 WO2022267584 A1 WO 2022267584A1 CN 2022082854 W CN2022082854 W CN 2022082854W WO 2022267584 A1 WO2022267584 A1 WO 2022267584A1
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layer
dielectric layer
cmos
silicon
germanium
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PCT/CN2022/082854
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English (en)
French (fr)
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翟光杰
武佩
潘辉
翟光强
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北京北方高业科技有限公司
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Priority to EP22827089.8A priority Critical patent/EP4345429A1/en
Publication of WO2022267584A1 publication Critical patent/WO2022267584A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G01J5/22—Electrical features thereof
    • G01J5/24—Use of specially adapted circuits, e.g. bridge circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the technical field of infrared detection, in particular to an infrared detector with a multilayer structure based on a CMOS process.
  • the infrared detector adopts the method of combining the measurement circuit and the infrared sensing structure.
  • the measurement circuit is prepared by CMOS (Complementary Metal-Oxide-Semiconductor, Complementary Metal Oxide Semiconductor) technology, and the infrared sensing structure is made of MEMS (Micro-Electro-Semiconductor).
  • MEMS Micro-Electro-Semiconductor
  • the infrared sensing structure is prepared by MEMS technology, and polyimide is used as the sacrificial layer, which is incompatible with CMOS technology.
  • polyimide As a sacrificial layer, polyimide has the problem that the unclean release affects the vacuum degree of the detector chip, and also limits the growth temperature of the subsequent film, which is not conducive to the selection of materials.
  • MEMS has low production capacity, low yield rate, and high cost, and cannot achieve large-scale mass production.
  • the technical problem to be solved by the present invention is how to overcome the problems that the measurement circuit is prepared by CMOS technology and the infrared sensing structure is prepared by MEMS technology, and that the technology is not compatible and the performance of the infrared detector is affected.
  • the invention provides a kind of infrared detector based on the multi-layer structure of CMOS process, comprising:
  • a CMOS measurement circuit system and a CMOS infrared sensing structure are prepared using a CMOS process, and the CMOS infrared sensing structure is directly prepared on the CMOS measurement circuit system;
  • the CMOS manufacturing process of the CMOS infrared sensing structure includes a metal interconnection process, a through-hole process, an IMD process, and an RDL process, and the CMOS infrared sensing structure includes at least three layers of metal interconnection layers, at least three layers of dielectric layers, and multiple layers.
  • the metal interconnection layer includes at least a reflective layer and two electrode layers, and the dielectric layer includes at least two sacrificial layers and a heat-sensitive dielectric layer; wherein, the heat-sensitive dielectric layer is used for its The temperature change corresponding to the absorbed infrared radiation is converted into a resistance change, and then the infrared target signal is converted into a signal that can realize electrical readout through the CMOS measurement circuit system;
  • the CMOS infrared sensing structure includes a resonant cavity composed of the reflective layer and the heat-sensitive medium layer and a suspended micro-bridge structure for controlling heat transfer
  • the suspended micro-bridge structure includes at least one layer of beam structure and at least one layer of An absorbing plate
  • the beam structure is located on a side of the absorbing plate close to or away from the CMOS measurement circuit system
  • a first columnar structure is arranged between the reflective layer and the beam structure
  • the first columnar structure is directly
  • the supporting base in the reflective layer is electrically connected to the corresponding beam structure
  • the beam structure is electrically connected to the CMOS measurement circuit system through the first columnar structure and the supporting base
  • the absorbing plate is connected to the
  • a second columnar structure is arranged between the beam structures, and the second columnar structure is directly electrically connected to the corresponding absorbing plate and the corresponding beam structure, and the absorbing plate is used to convert the infrared signal into an electrical signal and pass the
  • the first columnar structure includes at least one layer of solid columnar structure and/or at least one layer of hollow columnar structure
  • the second columnar structure includes at least one layer of solid columnar structure and/or at least one layer of hollow columnar structure
  • At least one hole-like structure is formed on the absorbing plate, and the hole-like structure at least penetrates the medium layer in the absorbing plate; and/or, at least one hole-like structure is formed on the beam structure;
  • the CMOS measurement circuit system is used to measure and process the array resistance value formed by one or more of the CMOS infrared sensing structures, and convert the infrared signal into an image electrical signal;
  • the CMOS measurement circuit system includes a bias voltage generation circuit, A column-level analog front-end circuit and a row-level circuit, the input end of the bias voltage generation circuit is connected to the output end of the row-level circuit, the input end of the column-level analog front-end circuit is connected to the output end of the bias voltage generation circuit,
  • the row-level circuit includes a row-level image pixel and a row selection switch, and the column-level analog front-end circuit includes a blind pixel; wherein, the row-level circuit is distributed in each pixel and generates a row of the circuit according to a timing sequence
  • the strobe signal selects the signal to be processed, and outputs the current signal to the column-level analog front-end circuit under the action of the bias voltage generating circuit for current-voltage conversion output;
  • the row-level circuit When the row-level circuit is controlled by the row selection switch and is strobed, it outputs a third bias voltage to the bias voltage generation circuit, and the bias voltage generation circuit Outputting a first bias voltage and a second bias voltage, the column-level analog front-end circuit obtains two currents according to the first bias voltage and the second bias voltage, and converts between the generated two currents The difference is transimpedance amplified and output as an output voltage.
  • the CMOS infrared sensing structure is prepared on or on the same layer as the metal interconnection layer of the CMOS measurement circuit system.
  • the sacrificial layer is used to make the CMOS infrared sensing structure form a hollow structure
  • the material constituting the sacrificial layer is silicon oxide
  • the sacrificial layer is etched by a post-CMOS process.
  • the reflective layer is used to reflect infrared signals and form the resonant cavity with the heat-sensitive medium layer
  • the reflective layer includes at least one metal interconnection layer
  • the first columnar structure adopts the metal
  • the interconnection process and the through-hole process connect the corresponding beam structure and the CMOS measurement circuit system
  • the second columnar structure uses the metal interconnection process and the through-hole process to connect the corresponding absorption plate and the corresponding beam structure;
  • the beam structure includes a first electrode layer, or the beam structure includes a first dielectric layer and a first electrode layer, or the beam structure includes a first electrode layer and a second dielectric layer, or the beam structure includes a first The electrode layer and the first heat sensitive medium layer, or the beam structure includes the first medium layer, the first electrode layer and the second medium layer, or the beam structure includes the first medium layer, the first electrode layer and the first heat sensitive medium layer Sensitive medium layer, or the beam structure includes a first electrode layer, a first heat-sensitive medium layer and a second medium layer, or the beam structure includes a first medium layer, a first electrode layer, a first heat-sensitive medium layer and The second medium layer, the absorption plate includes a second electrode layer and a second heat-sensitive medium layer, or the absorption plate includes a third medium layer, a second electrode layer and a second heat-sensitive medium layer, or the absorption plate It includes a second electrode layer, a second heat-sensitive medium layer, and a fourth medium layer, or the absorption plate includes a
  • the beam structure includes a first dielectric layer, a first electrode layer and a second dielectric layer
  • the absorbing plate includes a third dielectric layer and a second electrode layer
  • the absorbing plate includes a second electrode layer and a fourth dielectric layer
  • the absorption plate comprises a third dielectric layer, a second electrode layer and a fourth dielectric layer
  • the absorption plate comprises a supporting layer, a third dielectric layer, a second electrode layer and a fourth dielectric layer
  • the board includes a third dielectric layer, a second electrode layer, a fourth dielectric layer and a passivation layer
  • the absorber board includes a support layer, a third dielectric layer, a second electrode layer, a fourth dielectric layer and a passivation layer; wherein
  • the material constituting the first dielectric layer includes at least one of materials with a temperature coefficient of resistance greater than a set value prepared from amorphous silicon, amorphous germanium, amorphous silicon germanium or amorphous carbon, constituting the second The
  • the material constituting the first electrode layer includes titanium, titanium nitride, tantalum, tantalum nitride, titanium-tungsten alloy, nickel-chromium alloy, nickel-platinum alloy, nickel-silicon alloy, nickel, chromium, platinum, tungsten, aluminum or copper
  • At least one of the materials constituting the second electrode layer includes titanium, titanium nitride, tantalum, tantalum nitride, titanium-tungsten alloy, nickel-chromium alloy, nickel-platinum alloy, nickel-silicon alloy, nickel, chromium, platinum, tungsten , at least one of aluminum or copper.
  • At least one patterned metal interconnection layer is disposed between the reflective layer and the suspended micro-bridge structure, and the patterned metal interconnection layer is located above or below the airtight release insulating layer and is in contact with
  • the reflective layers are electrically insulated, and the patterned metal interconnection layer is used to adjust the resonance mode of the infrared detector;
  • the suspended microbridge structure includes a third dielectric layer and a fourth dielectric layer
  • the infrared detector further includes a metamaterial structure and/or a polarization structure
  • the metamaterial structure or the polarization structure is the third dielectric layer
  • At least one metal interconnection layer between the fourth dielectric layer and electrically insulated from the second electrode layer, or the second electrode layer serves as a metamaterial structure layer or a polarization structure layer.
  • the first columnar structure includes at least one layer of hollow columnar structure, and at least the first electrode layer is disposed in the hollow columnar structure;
  • the infrared detector also includes a first reinforcement structure, the first reinforcement structure is set corresponding to the position of the first columnar structure, and the first reinforcement structure is used to strengthen the relationship between the first columnar structure and the beam structure. and the connection stability between the first columnar structure and the reflective layer;
  • the first reinforcement structure is located on a side of the first electrode layer away from the CMOS measurement circuit system; or, the first reinforcement structure is located on a side of the first electrode layer close to the CMOS measurement circuit system.
  • the second columnar structure includes at least one layer of hollow columnar structure, and at least an electrode layer is disposed in the hollow columnar structure;
  • the infrared detector also includes a second reinforcement structure, the second reinforcement structure is set corresponding to the position of the second columnar structure, and the second reinforcement structure is used to strengthen the connection between the second columnar structure and the absorption plate.
  • the second reinforcement structure is located on a side of the electrode layer away from the CMOS measurement circuit system; or, the second reinforcement structure is located on a side of the electrode layer close to the CMOS measurement circuit system.
  • the first columnar structure includes at least one layer of solid columnar structures, and the solid columnar structures include solid structures;
  • the sidewall of the solid structure is arranged in contact with the corresponding sacrificial layer between the beam structure and the CMOS measurement circuit system, and the material constituting the solid structure includes at least one of tungsten, copper or aluminum; or,
  • the sidewall of the solid structure is coated with at least one dielectric layer and the solid structure is placed in contact with one layer of the dielectric layer, and the material constituting the solid structure includes at least one of tungsten, copper or aluminum, forming
  • the material of the dielectric layer includes silicon oxide, silicon nitride, silicon carbide, amorphous carbon, aluminum oxide, titanium oxide, vanadium oxide, amorphous silicon, amorphous germanium, amorphous silicon germanium, amorphous silicon germanium oxide, silicon At least one of , germanium, silicon germanium, silicon germanyl oxide, graphene, copper, or platinum; or,
  • the sidewall of the solid structure and the surface of the solid structure close to the CMOS measurement circuit system are coated with at least one adhesive layer, and the outermost adhesive layer in the first columnar structure is far away from the solid structure.
  • the sidewall of the structure is covered with a dielectric layer, the material constituting the solid structure includes at least one of tungsten, copper or aluminum, and the material constituting the adhesion layer includes titanium, titanium nitride, tantalum or tantalum nitride
  • At least one of the materials constituting the dielectric layer includes silicon oxide, silicon nitride, silicon carbide, amorphous carbon, aluminum oxide, titanium oxide, vanadium oxide, amorphous silicon, amorphous germanium, amorphous silicon germanium, amorphous At least one of crystalline germanyl silicon, silicon, germanium, germanium silicon, germanyl silicon, graphene, copper or platinum;
  • the infrared detector also includes a first reinforcement structure, the first reinforcement structure is set corresponding to the position of the first columnar structure and is located on the side of the first columnar structure away from the CMOS measurement circuit system, the first columnar structure A reinforcement structure is used to enhance the stability of the connection between the first column structure and the beam structure, and the first reinforcement structure includes a weighted block structure;
  • the weighted block structure is located on the side of the beam structure away from the CMOS measurement circuit system and the weighted block structure is arranged in contact with the beam structure; or, the beam structure corresponds to where the first columnar structure is located.
  • a through hole is formed at a position, the through hole exposes at least part of the first columnar structure, the weighted block structure includes a first part filling the through hole and a second part located outside the through hole, the first The orthographic projection of the two parts overlays the orthographic projection of the first part.
  • the second columnar structure includes at least one layer of solid columnar structures, and the solid columnar structure includes a solid structure;
  • the sidewall of the solid structure is arranged in contact with the sacrificial layer between the corresponding beam structure and the corresponding absorbing plate, and the material constituting the solid structure includes at least one of tungsten, copper or aluminum; or,
  • the sidewall of the solid structure is coated with at least one dielectric layer and the solid structure is placed in contact with one layer of the dielectric layer, and the material constituting the solid structure includes at least one of tungsten, copper or aluminum, forming
  • the material of the dielectric layer includes silicon oxide, silicon nitride, silicon carbide, amorphous carbon, aluminum oxide, titanium oxide, vanadium oxide, amorphous silicon, amorphous germanium, amorphous silicon germanium, amorphous silicon germanium oxide, silicon At least one of , germanium, silicon germanium, silicon germanyl oxide, graphene, copper, or platinum; or,
  • the sidewall of the solid structure and the surface of the solid structure close to the CMOS measurement circuit system are coated with at least one adhesive layer, and the outermost adhesive layer in the second columnar structure is far away from the solid structure.
  • the sidewall of the structure is covered with a dielectric layer, the material constituting the solid structure includes at least one of tungsten, copper or aluminum, and the material constituting the adhesion layer includes titanium, titanium nitride, tantalum or tantalum nitride
  • At least one of the materials constituting the dielectric layer includes silicon oxide, silicon nitride, silicon carbide, amorphous carbon, aluminum oxide, titanium oxide, vanadium oxide, amorphous silicon, amorphous germanium, amorphous silicon germanium, amorphous At least one of crystalline germanyl silicon, silicon, germanium, germanium silicon, germanyl silicon, graphene, copper or platinum;
  • the infrared detector also includes a second reinforcement structure, the second reinforcement structure is set corresponding to the position of the second columnar structure and is located on the side of the second columnar structure away from the CMOS measurement circuit system, the beam The structure is located on the side of the absorbing board close to the CMOS measurement circuit system, the second reinforcing structure is used to enhance the connection stability between the second columnar structure and the absorbing board, and the second reinforcing structure Includes weighted block construction;
  • the weighted block structure is located on the side of the absorbing plate away from the CMOS measurement circuit system and the weighted block structure is arranged in contact with the absorbing plate; or, the absorbing plate corresponds to where the second columnar structure is located.
  • a through hole is formed at the position, the through hole exposes at least part of the second columnar structure, the weighted block structure includes a first part filling the through hole and a second part located outside the through hole, the first The orthographic projection of the two parts overlays the orthographic projection of the first part.
  • the beam structure includes a thermally symmetrical structure
  • the suspended micro-bridge structure includes a first dielectric layer and a second dielectric layer, and the first dielectric layer or and/or the second dielectric layer between the opposite beam structures forms a patterned film layer structure,
  • the patterned film layer structure includes a plurality of strip patterns, and the strip patterns are arranged symmetrically with respect to the beam structure.
  • the airtight release insulating layer is located at the interface between the CMOS measurement circuit system and the CMOS infrared sensing structure and/or is located in the CMOS infrared sensing structure;
  • the airtight release insulating layer includes at least one dielectric layer, and the dielectric materials constituting the airtight release insulating layer include silicon carbide, silicon carbonitride, silicon nitride, amorphous silicon, amorphous germanium, amorphous silicon germanium, silicon , germanium, germanium silicon, amorphous carbon or aluminum oxide at least one.
  • the infrared detector is based on 3nm, 7nm, 10nm, 14nm, 22nm, 28nm, 32nm, 45nm, 65nm, 90nm, 130nm, 150nm, 180nm, 250nm or 350nm CMOS process;
  • the metal wiring material constituting the metal interconnection layer includes at least one of aluminum, copper, tungsten, titanium, nickel, chromium, platinum, silver, ruthenium or cobalt.
  • the embodiment of the present invention uses the CMOS process to realize the integrated preparation of the CMOS measurement circuit system and the CMOS infrared sensing structure on the CMOS production line. Compared with the MEMS process, CMOS does not have process compatibility problems, and solves the technical difficulties faced by the MEMS process.
  • infrared detectors by CMOS process production line technology can also reduce transportation costs and reduce risks caused by transportation and other issues; infrared detectors use silicon oxide as a sacrificial layer, silicon oxide is fully compatible with CMOS technology, the preparation process is simple and easy to control, CMOS The process does not have the problem that the sacrificial layer polyimide release is not clean and affects the vacuum degree of the detector chip, and the subsequent film growth temperature is not limited by the material of the sacrificial layer, and the multi-layer process design of the sacrificial layer can be realized without being limited by the process.
  • the sacrificial layer can be easily used to achieve planarization, reducing process difficulty and possible risks; the infrared detector manufactured by the integrated CMOS process can achieve the goal of high chip yield, low cost, high production capacity and large-scale integrated production.
  • infrared detectors based on CMOS technology can enable infrared detectors to achieve smaller feature structures and thinner film thicknesses, making infrared detectors have a larger duty cycle and higher thermal conductivity Low heat capacity and smaller heat capacity, so that the infrared detector has higher detection sensitivity, longer detection distance and better detection performance; the infrared detector based on CMOS technology can make the detector pixel size smaller and achieve the same array of pixels
  • the smaller chip area is more conducive to the realization of chip miniaturization; the infrared detector based on the CMOS process has a mature process production line and higher process control precision, which can better meet the design requirements, and the product consistency is better, which is more conducive to Circuit chip adjustment performance is
  • the hole-like structure on the absorbing plate is conducive to accelerating the release rate of the sacrificial layer and releasing the internal stress of the absorbing plate, which optimizes the flatness of the absorbing plate.
  • the hole-like structure on the beam structure is conducive to further reducing the heat dissipation of the beam structure. Guide, improve the infrared detection sensitivity of the infrared detector.
  • FIG. 1 is a schematic diagram of a three-dimensional structure of an infrared detector pixel provided by an embodiment of the present invention
  • Fig. 2 is a schematic cross-sectional structure diagram of an infrared detector pixel provided by an embodiment of the present invention
  • Fig. 3 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the present invention.
  • Fig. 4 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the present invention.
  • Fig. 5 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the present invention.
  • Fig. 6 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the present invention.
  • Fig. 7 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the present invention.
  • Fig. 8 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the present invention.
  • Fig. 9 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the present invention.
  • Fig. 10 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the present invention.
  • Fig. 11 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the present invention.
  • Fig. 12 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the present invention.
  • Fig. 13 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the present invention.
  • FIG. 14 is a schematic structural diagram of a CMOS measurement circuit system provided by an embodiment of the present invention.
  • Fig. 15 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the present invention.
  • Fig. 16 is a schematic diagram of a three-dimensional structure of another infrared detector pixel provided by an embodiment of the present invention.
  • Fig. 17 is a schematic diagram of a three-dimensional structure of another infrared detector pixel provided by an embodiment of the present invention.
  • Fig. 18 is a schematic diagram of a three-dimensional structure of another infrared detector pixel provided by an embodiment of the present invention.
  • Fig. 19 is a schematic three-dimensional structure diagram of another infrared detector pixel provided by an embodiment of the present invention.
  • FIG. 20 is a schematic top view of a polarization structure provided by an embodiment of the present invention.
  • Fig. 21 is a schematic top view of another polarization structure provided by an embodiment of the present invention.
  • Fig. 22 is a schematic top view of another polarization structure provided by an embodiment of the present invention.
  • Fig. 23 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the present invention.
  • Fig. 24 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the present invention.
  • Fig. 25 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the present invention.
  • Fig. 26 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the present invention.
  • Fig. 27 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the present invention.
  • Fig. 28 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the present invention.
  • Fig. 29 is a schematic three-dimensional structure diagram of another infrared detector pixel provided by an embodiment of the present invention.
  • FIG. 30 is a schematic top view of the structure shown in FIG. 29;
  • Fig. 31 is a schematic top view structure diagram of a first dielectric layer provided by an embodiment of the present invention.
  • FIG. 1 is a schematic three-dimensional structural diagram of an infrared detector pixel provided by an embodiment of the present invention
  • FIG. 2 is a schematic cross-sectional structural diagram of an infrared detector pixel provided by an embodiment of the present invention.
  • the infrared detector includes a plurality of infrared detector pixels arranged in an array
  • the infrared detector based on the CMOS process includes a CMOS measurement circuit system 1 and a CMOS infrared sensing structure 2
  • the CMOS measurement circuit system 1 and The CMOS infrared sensing structures 2 are all fabricated using a CMOS process, and the CMOS infrared sensing structures 2 are directly fabricated on the CMOS measurement circuit system 1 .
  • the CMOS infrared sensing structure 2 is used to convert the external infrared signal into an electrical signal and transmit it to the CMOS measurement circuit system 1.
  • the CMOS measurement circuit system 1 reflects the temperature information corresponding to the infrared signal according to the received electrical signal to realize infrared The temperature detection function of the detector.
  • Both the CMOS measurement circuit system 1 and the CMOS infrared sensing structure 2 are prepared by CMOS technology, and the CMOS infrared sensing structure 2 is directly prepared on the CMOS measurement circuit system 1, that is, the CMOS measurement circuit system 1 is first prepared by the CMOS process, and then the CMOS The parameters of the production line and the various processes compatible with the production line, using the CMOS process to continuously prepare the CMOS infrared sensing structure 2 .
  • the embodiment of the present invention utilizes the CMOS process to realize the integrated preparation of the CMOS measurement circuit system 1 and the CMOS infrared sensing structure 2 on the CMOS production line.
  • CMOS does not have the problem of process compatibility, which solves the problems faced by the MEMS process.
  • CMOS production line technology to prepare infrared detectors can also reduce transportation costs and reduce risks caused by transportation and other issues; infrared detectors use silicon oxide as a sacrificial layer, silicon oxide is fully compatible with CMOS technology, and the preparation process is simple and It is easy to control, and the CMOS process does not have the problem that the release of the sacrificial layer polyimide is not clean enough to affect the vacuum of the detector chip, and the growth temperature of the subsequent film is not limited by the material of the sacrificial layer, and the multi-layer process design of the sacrificial layer can be realized.
  • the infrared detector manufactured by the integrated CMOS process can achieve high chip yield, low cost, high production capacity and large-scale integration
  • the goal of production is to provide a broader application market for infrared detectors; infrared detectors based on CMOS technology can enable infrared detectors to achieve smaller feature structures and thinner film thicknesses, making the infrared detectors have a larger duty cycle , lower thermal conductivity, and smaller heat capacity, so that the infrared detector has higher detection sensitivity, longer detection distance and better detection performance;
  • the infrared detector based on CMOS technology can make the detector pixel size smaller, A smaller chip area under the same array of pixels is more conducive to chip miniaturization; the infrared detector based on the CMOS process has a mature process production line and higher process control accuracy, which can better meet the design requirements and make the product more consistent.
  • the CMOS infrared sensing structure 2 includes a resonant cavity composed of a reflective layer 4 and a heat-sensitive medium layer, and a suspended micro-bridge structure 40 for controlling heat transfer.
  • the CMOS infrared sensing structure 2 includes a reflective layer 4 located on the CMOS measurement circuit system 1 and a suspended micro-bridge structure 40 for controlling heat transfer.
  • the suspended micro-bridge structure 40 includes an absorbing plate 10, and the absorbing plate 10 includes a heat-sensitive dielectric layer.
  • a resonant cavity is formed between the reflective layer 4 and the heat-sensitive medium layer.
  • the suspended micro-bridge structure 40 includes at least one layer of beam structure 11 and at least one layer of absorbing plate 10.
  • the beam structure 11 is located on the side of the absorbing plate 10 close to or away from the CMOS measurement circuit system 1.
  • FIG. 1 exemplarily sets the suspended micro-bridge structure 40 It includes a layer of beam structure 11 and a layer of absorbing board 10 , and the beam structure 11 is located on the side of the absorbing board 10 adjacent to the CMOS measurement circuit system 1 .
  • a first columnar structure 61 is arranged between the reflective layer 4 and the beam structure 11, and the first columnar structure 61 is directly electrically connected to the supporting base 42 in the reflective layer 4 and the corresponding beam structure 11, and the beam structure 11 passes through the first columnar structure 61 and the corresponding beam structure 11.
  • the support base 42 is electrically connected to the CMOS measurement circuit system 1 , and the first columnar structure 61 is used to support the corresponding beam structure 11 after the sacrificial layer between the reflective layer 4 and the corresponding beam structure 11 is released.
  • a second columnar structure 62 is arranged between the absorbing plate 10 and the beam structure 11, and the second columnar structure 62 is directly electrically connected to the corresponding absorbing plate 10 and the corresponding beam structure 11.
  • the absorbing plate 10 is used to convert the infrared signal into an electrical signal and
  • the second columnar structure 62 and the corresponding beam structure 11 are electrically connected to the corresponding first columnar structure 61, that is, the electrical signal converted by the absorbing plate 10 through the infrared signal passes through the second columnar structure 62, the beam structure 11, and the first columnar structure in sequence.
  • the structure 61 and the support base 42 are transmitted to the CMOS measurement circuit system 1, and the CMOS measurement circuit system 1 processes the received electrical signal to reflect the temperature information to realize the non-contact infrared temperature detection of the infrared detector.
  • the second columnar structure 62 is used for After the sacrificial layer between the corresponding absorber plate 10 and the corresponding beam structure 11 is released, the corresponding beam structure 11 or absorber plate 10 is supported.
  • first columnar structure 61 described in the above embodiment is directly electrically connected to the support base 42 and the beam structure 11 in the reflective layer 4, which means that the first columnar structure 61 has only two electrical connection ends, and the first columnar structure 61 One electrical connection end of the structure 61 is directly electrically connected to the support base 42 , and the other electrical connection end of the first columnar structure 61 is directly electrically connected to the beam structure 11 closest to the electrical connection end of the first columnar structure 61 .
  • the second columnar structure 62 described in the above embodiment is directly electrically connected to the absorbing plate 10 and the beam structure 11, which means that the second columnar structure 62 has only two electrical connection ends, and one electrical connection end of the second columnar structure 62 is directly electrically connected to The absorbing plate 10 closest to the electrical connection end of the second columnar structure 62 is directly electrically connected to the beam structure 11 closest to the electrical connection end of the second columnar structure 62 .
  • the CMOS infrared sensing structure 2 outputs the positive electrical signal and the grounding electrical signal through different electrode structures, and the positive electrical signal and the grounding electrical signal are transmitted to the corresponding support base 42 through different sets of columnar structures, one set of columnar structures includes a first columnar structure 61 and a second columnar structure 62. Exemplarily, it can be set that along the direction parallel to the CMOS measurement circuit system 1, the CMOS infrared sensing structure 2 includes two sets of columnar structures, one set of columnar structures can be set for transmitting positive electrical signals, and the other set of columnar structures can be used for Transmits ground electrical signals.
  • the CMOS infrared sensing structure 2 includes four groups of columnar structures, and the four groups of columnar structures can transmit positive electrical signals and grounding electrical signals in groups of two.
  • the infrared detector since the infrared detector includes a plurality of infrared detector pixels arranged in an array, four sets of columnar structures can also be selected, two sets of columnar structures transmit positive electrical signals and grounding electrical signals respectively, and the other two sets of columnar structures supply adjacent The infrared detector pixel transmits the electrical signal.
  • the reflective layer 4 includes a reflective plate 41 and a supporting base 42, a part of the reflective layer 4 is used as a dielectric for the electrical connection between the first columnar structure 61 and the CMOS measurement circuit system 1, that is, the supporting base 42, and the reflective plate 41 is used for reflecting Infrared rays to the heat-sensitive medium layer in the suspended micro-bridge structure 40, cooperate with the resonant cavity formed between the reflective layer 4 and the heat-sensitive medium layer in the suspended micro-bridge structure 40 to realize the secondary absorption of infrared rays, so as to improve the infrared detector's infrared Absorptivity, to optimize the infrared detection performance of the infrared detector.
  • FIG. 3 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the present invention.
  • the suspended micro-bridge structure 40 can also be set to include a multi-layer beam structure 11.
  • Layer beam structure 112 the first layer beam structure 111 is located on the side of the second layer beam structure 112 away from the CMOS measurement circuit system 1, and a columnar structure 113 is also arranged between the first layer beam structure 111 and the second layer beam structure 112, The column structure 113 is used to support the beam structure 111 on the first floor after the sacrificial layer between the beam structure 111 on the first floor and the beam structure 112 on the second floor is released.
  • the electrode layer in the absorbing plate 10 is electrically connected to the electrode layer in the first layer of beam structure 111 through the second columnar structure 62, and the electrode layer in the first layer of beam structure 111 passes through the first layer of beam structure 111 and the second layer of beam structure
  • the columnar structure 113 between 112 is electrically connected to the electrode layer in the beam structure 112 of the second layer, and the electrode layer in the beam structure 112 of the second layer is electrically connected to the first columnar structure 61.
  • the signal passes through the second column structure 62, the first beam structure 111, the column structure 113 between the first beam structure 111 and the second beam structure 112, the second beam structure 112, the first column structure 61 and the support
  • the base 42 is transferred to the CMOS measurement circuitry 1 .
  • first columnar structure 61 is directly electrically connected to the support base 42 and the beam structure 11 closest to the CMOS measurement circuit system 1
  • second columnar structure 62 is directly electrically connected to the absorber plate 10 closest to the CMOS measurement circuit system 1 and the absorber plate 10 closest to the CMOS measurement circuit system 1. 10 nearest beam structure 11.
  • FIG. 4 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the present invention.
  • the suspended micro-bridge structure 40 can also be set to include multi-layer absorber boards 10.
  • Figure 4 exemplarily sets the suspended micro-bridge structure 40 to include two layers of absorber boards 10, for example including a first layer of absorber boards 1001 and a second layer of absorber boards.
  • a layer of absorbing plate 1002 the first layer of absorbing plate 1001 is located on the side of the second layer of absorbing plate 1002 away from the CMOS measurement circuit system 1, and a columnar structure 1003 is also arranged between the first layer of absorbing plate 1001 and the second layer of absorbing plate 1002, The columnar structure 1003 is used to support the first absorbing plate 1001 after the sacrificial layer between the first absorbing plate 1001 and the second absorbing plate 1002 is released.
  • the first layer of absorbing plate 1001 and the second layer of absorbing plate 1002 both include electrode layers, and the electrode layers in the two can be electrically connected through the columnar structure 1003 between the first layer of absorbing plate 1001 and the second layer of absorbing plate 1002.
  • the electrode layers in the absorption plate 1002 may not be electrically connected, and the electrode layers in the second layer of absorbing plate 1002 are electrically connected to the electrode layers in the beam structure 11 through the second columnar structure 62, and the electrode layers in the beam structure 11 are electrically connected through the first columnar structure 61 Electrically connected to the supporting base 42 , the electrical signal converted from the infrared signal by the absorbing plate 10 is transmitted to the CMOS measurement circuit system 1 through the second columnar structure 62 , the beam structure 11 , the first columnar structure 61 and the supporting base 42 in sequence.
  • the materials used in the heat-sensitive medium layer in the first layer of absorbing plate 1001 and the second layer of absorbing plate 1002 can be the same or different, and the suspended micro-bridge structure 40 is set to include multi-layer absorbing plates 10, and the heat in different absorbing plates 10 The heights of the resonant cavities corresponding to the sensitive medium layer are different, so that the infrared detector can absorb infrared radiation of different bands.
  • the first columnar structure 61 is directly electrically connected to the support base 42 and the beam structure 11 closest to the CMOS measurement circuit system 1
  • the second columnar structure 62 is directly electrically connected to the absorber plate 10 closest to the CMOS measurement circuit system 1 and the absorber plate 10 closest to the CMOS measurement circuit system 1.
  • FIG. 5 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the present invention. Different from the structures shown in Figures 1 to 4, the infrared detector beam structure 11 of the structure shown in Figure 5 is located on the side of the absorbing plate 10 away from the CMOS measurement circuit system 1, and Figure 5 exemplarily sets a suspended microbridge
  • the structure 40 comprises a layer of beam structure 11 and a layer of absorbing panels 10 .
  • the electrode layer in the absorbing plate 10 is electrically connected to the electrode layer in the beam structure 11 through the second columnar structure 62, and the electrode layer in the beam structure 11 is electrically connected to the supporting base 42 through the first columnar structure 61, and the absorbing plate 10
  • the electrical signal converted from the infrared signal is transmitted to the CMOS measurement circuit system 1 through the second columnar structure 62 , the beam structure 11 , the first columnar structure 61 and the supporting base 42 in sequence.
  • the suspended micro-bridge structure 40 includes a multi-layer beam structure 11 and a multi-layer absorber plate 10
  • the beam structure 11 is located on the side of the absorber plate 10 away from the CMOS measurement circuit system 1
  • the first columnar structure 61 is directly electrically connected to the supporting base 42 and the beam structure 11 farthest from the CMOS measurement circuit system 1
  • the second columnar structure 62 is directly electrically connected to the absorber plate 10 farthest from the CMOS measurement circuit system 1 and the beam structure 11 closest to the absorber plate 10 .
  • the first columnar structure 61 includes at least one layer of solid columnar structure and/or at least one layer of hollow columnar structure
  • the second columnar structure 62 includes at least one layer of solid columnar structure and/or at least one layer of hollow columnar structure, that is, the first columnar structure 61 It may include at least one layer of solid columnar structure, may also include at least one layer of hollow columnar structure, may also include at least one layer of solid columnar structure and at least one layer of hollow columnar structure
  • the second columnar structure 62 may include at least one layer of solid columnar structure, It may also include at least one layer of hollow columnar structures, or at least one layer of solid columnar structures and at least one layer of hollow columnar structures.
  • the first columnar structure 61 includes a layer of hollow columnar structure, that is, a hollow structure is formed at the position of the first columnar structure 61
  • the second columnar structure 62 includes a layer of hollow columnar structure, that is, a hollow columnar structure is formed at the position of the second columnar structure 62.
  • the position forms a hollow structure, and the hollow columnar structure is conducive to reducing the heat conduction of the first columnar structure 61 and the second columnar structure 62, thereby reducing the heat conduction generated by the first columnar structure 61 and the second columnar structure 62 to the suspended micro-bridge structure 40
  • the influence of the generated electric signal is beneficial to improve the infrared detection performance of the infrared detector pixel and the infrared detector including the infrared detector pixel.
  • FIG. 6 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the present invention. 1 and 6, FIG. 6 exemplarily sets that the first columnar structure 61 includes a layer of solid columnar structure, that is, a solid metal structure is formed at the position of the first columnar structure 61, and the second columnar structure 62 includes a layer of solid columnar structure. , that is, a solid metal structure is formed at the position of the second columnar structure 62, and the mechanical stability of the solid columnar structure is better, which improves the stability of the first columnar structure 61, the beam structure 11 and the supporting base 42, and the second columnar structure 62 and the beam structure.
  • the stability of the supporting connection between 11 and the absorbing plate 10 further improves the structural stability of the infrared sensor pixel and the infrared detector including the infrared detector pixel.
  • the resistance of the metal solid columnar structure is small, which is conducive to reducing the signal loss during the electrical signal transmission process between the absorbing plate and the CMOS measurement circuit system 1, and improving the infrared detection performance of the infrared detector, and the metal solid columnar structure
  • the size is easier to precisely control, that is, the solid columnar structure can realize a smaller-sized columnar structure, which is conducive to meeting the demand for a smaller chip size and realizing the miniaturization of the infrared detector.
  • FIG. 7 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the present invention
  • FIG. 8 is a schematic cross-sectional structural diagram of another infrared detector pixel provided by an embodiment of the present invention.
  • Fig. 7 exemplarily sets that the first columnar structure 61 includes a layer of solid columnar structure, that is, a solid metal structure is formed at the position of the first columnar structure 61, and the second columnar structure 62 includes a layer of hollow columnar structure, that is, a solid metal structure is formed at the position of the second columnar structure 62. 62 positions form a hollow.
  • FIG. 7 exemplarily sets that the first columnar structure 61 includes a layer of solid columnar structure, that is, a solid metal structure is formed at the position of the first columnar structure 61, and the second columnar structure 62 includes a layer of hollow columnar structure, that is, a solid metal structure is formed at the position of the second columnar structure 62. 62 positions form
  • the first columnar structure 61 includes a layer of solid columnar structure, that is, a hollow is formed at the position of the first columnar structure 61
  • the second columnar structure 62 includes a layer of solid columnar structure, that is, at the location of the second columnar structure 62.
  • the position forms a solid metal structure, so that the infrared detectors shown in FIG. 7 and FIG. 8 have the advantages of the hollow columnar structure and the solid columnar structure described in the above-mentioned embodiments.
  • the absorbing plate 9 and the beam structure 10 are located on different layers, and the beam structure 10 does not affect the area occupied by the absorbing plate 9, which is conducive to increasing the area occupied by the absorbing plate 10 and improving the infrared detection of the infrared detector. sensitivity.
  • FIG. 9 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the present invention.
  • both the first columnar structure 61 and the second columnar structure 62 may include a multilayer solid columnar structure
  • FIG. 9 schematically shows that the first columnar structure 61 includes The two-layer solid columnar structure, that is, the first columnar structure 61 includes a solid columnar structure 610 and a solid columnar structure 620, and the second columnar structure 62 can also adopt a multi-layer solid columnar structure similar to the first columnar structure 61 shown in FIG. 9
  • the setting method is so that the infrared detector has the advantages of the solid columnar structure described in the above embodiments.
  • both the first columnar structure 61 and the second columnar structure 62 include a multi-layer hollow columnar structure, so that the infrared detector has the advantages of the hollow columnar structure described in the above embodiments.
  • setting both the first columnar structure 61 and the second columnar structure 62 to include a multilayer hollow columnar structure, or setting the first columnar structure 61 and the second columnar structure 62 to include a multilayer solid columnar structure can reduce the number of columns in the same columnar structure.
  • the type of column is beneficial to simplify the preparation process of the columnar structure.
  • FIG. 10 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the present invention
  • FIG. 11 is a schematic cross-sectional structural diagram of another infrared detector pixel provided by an embodiment of the present invention
  • the first columnar structure 61 and the second columnar structure 62 may include at least one layer of solid columnar structure and at least one layer of hollow columnar structure.
  • the first columnar structure 61 includes a layer of solid columnar structure 630 and a layer of hollow columnar structure 640.
  • FIG. Close to the side of the CMOS measurement circuit system 1, FIG.
  • the infrared detector has the advantages of the hollow columnar structure and the solid columnar structure described in the above-mentioned embodiments.
  • the columns located on the same floor in the first columnar structure 61 or the second columnar structure 62 can be set as columns of the same type, that is, the columns located on the same floor in the first columnar structure 61 can be all solid columnar structures or all Hollow columnar structure, the columns located on the same layer in the second columnar structure 62 can be all solid columnar structures or all hollow columnar structures, so that the columns located on the same layer can be formed by the same process steps, which is conducive to simplifying the preparation of columnar structures craft.
  • different types of columns may be included in the same columnar structure, and different types of columns may be arranged on the same floor, and the types of columns may be specifically set based on the specific requirements of the infrared detector, which is not specifically limited in this embodiment of the present invention.
  • the first columnar structure 61 and/or the second columnar structure 62 to include multi-layer columns, it is beneficial to reduce the height of each layer of columns in the columnar structure, the lower the height of the column, the better its steepness, so It is easier to form a column with better steepness, thereby optimizing the overall steepness of the columnar structure, and the overall size of the columnar structure can also be made smaller, which is conducive to reducing the space occupied by the columnar structure, thereby increasing the CMOS infrared sensor.
  • the effective area of the structure is increased, thereby increasing the duty cycle and improving the infrared detection sensitivity of the infrared detector.
  • the columnar structure may also include more layers of columns, for example, three or more layers of columns, and each column may be a solid columnar structure or a hollow columnar structure.
  • each column may be a solid columnar structure or a hollow columnar structure.
  • the columnar structure 1003 between the second layer of absorbing plate 1002 can also adopt the form of hollow columnar structure, solid columnar structure and combination of hollow columnar structure and solid columnar structure shown in the above embodiments.
  • At least one hole-like structure is formed on the absorbing plate 10, and the hole-like structure at least penetrates the medium layer in the absorbing plate 10; and/or, at least one hole-like structure is formed on the beam structure 11, That is, only the absorbing plate 10 may be provided with a hole-like structure, or only the beam structure 11 may be formed with a hole-like structure, or both the absorbing plate 10 and the beam structure 11 may be formed with a hole-like structure.
  • the hole-like structure can be a circular hole-like structure, a square hole-like structure, a polygonal hole-like structure or an irregular pattern hole
  • the embodiment of the present invention does not specifically limit the shape of the hole-like structures on the absorbing plate 10 and the beam structure 11, and the embodiment of the present invention does not specifically limit the number of the hole-like structures on the absorbing plate 10 and the beam structure 11.
  • the hole-like structure is formed on the absorbing plate 10, the hole-like structure at least penetrates the dielectric layer in the absorbing plate 10, and the infrared detectors are all provided with a sacrificial layer that needs to be released in contact with the absorbing plate 10, and The release of the sacrificial layer needs to corrode the sacrificial layer with chemical reagents at the end of the infrared detector manufacturing process.
  • the porous structure on the absorbing plate 10 is conducive to increasing the contact area between the chemical reagents for release and the sacrificial layer, and accelerating the release of the sacrificial layer. rate.
  • the area of the absorbing plate 10 is larger than that of the beam structure 11.
  • the hole-like structure on the absorbing plate 10 is conducive to releasing the internal stress of the absorbing plate 10, optimizing the flattening degree of the absorbing plate 10, and improving the structure of the absorbing plate 10. stability, thereby improving the structural stability of the entire infrared detector.
  • at least one hole-like structure is formed on the beam structure 11, which is beneficial to further reducing the thermal conduction of the beam structure 11 and improving the infrared detection sensitivity of the infrared detector.
  • the CMOS measurement circuit system 1 may include at least one airtight release insulating layer 3, the airtight release insulating layer 3 is used to protect the CMOS infrared sensing structure 2 during the release etching process.
  • the CMOS measurement circuitry 1 is independent of the process.
  • the airtight release insulating layer 3 is located at the interface between the CMOS measurement circuit system 1 and the CMOS infrared sensing structure 2 and/or in the CMOS infrared sensing structure 2, that is, the airtight release insulating layer 3 can be located in the CMOS measurement circuit
  • the interface between the system 1 and the CMOS infrared sensing structure 2, or the airtight release insulating layer 3 is arranged in the CMOS infrared sensing structure 2, or the interface between the CMOS measurement circuit system 1 and the CMOS infrared sensing structure 2 is provided with
  • the airtight release insulating layer 3 and the CMOS infrared sensing structure 2 are provided with an airtight release insulating layer 3.
  • the airtight release insulating layer 3 is used to protect the CMOS measurement circuit system 1 from erosion when the sacrificial layer is released during the etching process.
  • the airtight release insulating layer 3 Contains at least one dielectric layer, and the dielectric material constituting the airtight release isolation layer 3 includes silicon carbide, silicon carbonitride, silicon nitride, amorphous silicon, amorphous germanium, amorphous silicon germanium, silicon, germanium, silicon germanium alloy , at least one of amorphous carbon or alumina.
  • the airtight release isolation layer 3 can be, for example, a layer of dielectric layer located above the metal interconnection layer of the reflective layer 4 or multi-layer dielectric layer, here exemplarily shows that the airtight release insulating layer 3 is a layer of dielectric layer, at this time the material constituting the airtight release insulating layer 3 may include silicon carbide, silicon carbonitride, silicon nitride, amorphous At least one of silicon, amorphous germanium, amorphous germanium silicon, silicon, germanium, silicon germanium alloy, amorphous carbon or aluminum oxide, the thickness of the airtight release isolation layer 3 is smaller than the thickness of the sacrificial layer.
  • the resonant cavity of the infrared detector is realized by releasing the vacuum cavity behind the silicon oxide sacrificial layer, the reflective layer 4 is used as the reflective layer of the resonant cavity, the sacrificial layer is located between the reflective layer 4 and the suspended micro-bridge structure 40, and is arranged on the reflective layer 4
  • At least one airtight release insulating layer 3 is selected from silicon carbide, silicon carbonitride, silicon nitride, amorphous silicon, amorphous germanium, amorphous germanium silicon, silicon, germanium, silicon germanium alloy, amorphous carbon or aluminum oxide, etc.
  • the material When the material is used as a part of the resonant cavity, it does not affect the reflection effect of the reflective layer 4, and can reduce the height of the resonant cavity, thereby reducing the thickness of the sacrificial layer, and reducing the difficulty of releasing the sacrificial layer composed of silicon oxide.
  • the airtight release insulating layer 3 and the first columnar structure 61 form an airtight structure, which completely separates the CMOS measurement circuit system 1 from the sacrificial layer, thereby realizing the protection of the CMOS measurement circuit system 1 .
  • FIG. 12 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the present invention.
  • Fig. 12 also sets the airtight release insulating layer 3 in the CMOS infrared sensing structure 2, and the airtight release insulating layer 3 can be, for example, a layer of dielectric layer above the metal interconnection layer of the reflective layer 4 or multiple layers of dielectric layers.
  • the airtight release insulating layer 3 is shown as a layer of dielectric layer, and the airtight release insulating layer 3 covers the first columnar structure 61.
  • the material constituting the airtight release insulating layer 3 may include At least one of silicon carbide, silicon carbonitride, silicon nitride, amorphous silicon, amorphous germanium, amorphous silicon germanium, silicon, germanium, silicon germanium alloy, amorphous carbon or aluminum oxide, sealed release barrier layer 3
  • the thickness of is also smaller than the thickness of the sacrificial layer.
  • the airtight release insulating layer 3 covering the first columnar structure 61 can reduce the contact between the first columnar structure 61 and the external environment, reduce the contact resistance between the first columnar structure 61 and the external environment, and then reduce the infrared detector pixel noise, improve the detection sensitivity of the infrared detection sensor, and at the same time prevent electrical breakdown of the exposed metal of the first columnar structure 61 .
  • the resonant cavity of the infrared detector is realized by releasing the vacuum cavity behind the silicon oxide sacrificial layer.
  • the reflective layer 4 is used as the reflective layer of the resonant cavity.
  • the sacrificial layer is located between the reflective layer 4 and the suspended micro-bridge structure 40.
  • At least one airtight release insulating layer 3 on the layer 4 is selected from silicon carbide, silicon carbonitride, silicon nitride, amorphous silicon, amorphous germanium, amorphous silicon germanium, silicon, germanium, silicon germanium alloy, amorphous carbon or
  • materials such as aluminum oxide are used as a part of the resonant cavity, the reflection effect of the reflective layer 4 is not affected, and the height of the resonant cavity can be reduced, thereby reducing the thickness of the sacrificial layer and reducing the difficulty of releasing the sacrificial layer composed of silicon oxide.
  • the airtight release insulating layer 3 and the first columnar structure 61 form an airtight structure, which completely separates the CMOS measurement circuit system 1 from the sacrificial layer, thereby realizing the protection of the CMOS measurement circuit system 1 .
  • FIG. 13 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the present invention.
  • the airtight release insulating layer 3 is located between the reflective layer 4 and the CMOS measurement circuit system 1, that is, the airtight release insulating layer 3 is located below the metal interconnection layer of the reflective layer 4, and the support base 42 passes through the through hole penetrating the airtight release insulating layer 3 and The CMOS measurement circuitry 1 is electrically connected.
  • both the CMOS measurement circuit system 1 and the CMOS infrared sensing structure 2 are prepared by CMOS technology, after the CMOS measurement circuit system 1 is formed, the wafer containing the CMOS measurement circuit system 1 is prepared and transferred to the next process.
  • process to prepare and form a CMOS infrared sensing structure 2 because silicon oxide is the most commonly used dielectric material in the CMOS process, and silicon oxide is mostly used as the insulating layer between metal layers on CMOS circuits, so if there is no As a barrier, the insulating layer will seriously affect the circuit.
  • the embodiment of the present invention is between the CMOS measurement circuit system 1 and the CMOS infrared sensing structure 2.
  • An airtight release insulating layer 3 is set at the interface between them.
  • an airtight release insulating layer 3 is formed on the CMOS measurement circuit system 1, and the CMOS measurement circuit system 1 is protected by the airtight release insulating layer 3, and in order to ensure that the support base 42 is in contact with the CMOS measurement circuit
  • an etching process is used to form a through hole in the area of the airtight release insulating layer 3 corresponding to the support base 42, and the support base 42 and the CMOS measurement circuit system 1 are realized through the through hole. electrical connection.
  • the airtight release insulating layer 3 and the support base 42 are set to form an airtight structure, completely separating the CMOS measurement circuit system 1 from the sacrificial layer, so as to realize the protection of the CMOS measurement circuit system 1 .
  • the material constituting the airtight release insulating layer 3 may include silicon carbide, silicon carbonitride, silicon nitride, amorphous silicon, amorphous germanium, amorphous silicon germanium, silicon, germanium, silicon germanium alloy, amorphous carbon or at least one of alumina.
  • silicon carbide, silicon carbonitride, silicon nitride, amorphous silicon, amorphous germanium, amorphous silicon germanium, silicon, germanium, silicon germanium alloy, amorphous carbon or aluminum oxide are all corrosion-resistant materials for CMOS processes, That is, these materials will not be corroded by the reagent for releasing the sacrificial layer, so the hermetic release insulating layer 3 can be used to protect the CMOS measurement circuit system 1 from being corroded when the sacrificial layer is released by the etching process.
  • the airtight release insulating layer 3 is arranged to cover the CMOS measurement circuit system 1 , and the airtight release insulating layer 3 can also be used to protect the CMOS measurement circuit system 1 from process influence during the release etching process of manufacturing the CMOS infrared sensing structure 2 .
  • the materials for forming the airtight release insulating layer 3 include silicon, germanium, silicon-germanium alloy, amorphous silicon, amorphous germanium, amorphous silicon germanium, At least one of amorphous carbon, silicon carbide, aluminum oxide, silicon nitride or silicon carbonitride, while the airtight release insulating layer 3 is provided to improve the stability of the first columnar structure 61, the airtight release insulating layer 3 hardly Affecting the reflection process in the resonant cavity can prevent the airtight release insulating layer 3 from affecting the reflection process of the resonant cavity, thereby avoiding the influence of the airtight release insulating layer 3 on the detection sensitivity of the infrared detector.
  • the CMOS manufacturing process of the CMOS infrared sensing structure 2 includes a metal interconnection process, a through-hole process, an IMD (Inter Metal Dielectric) process and an RDL (rewiring) process
  • the CMOS infrared sensing structure 2 includes at least Three metal interconnection layers, at least three dielectric layers and multiple interconnection holes
  • the dielectric layer includes at least two sacrificial layers and a heat-sensitive dielectric layer
  • the metal interconnection layer includes at least a reflective layer 4 and two electrode layers
  • the heat-sensitive medium layer includes a heat-sensitive material with a temperature coefficient of resistance greater than a set value.
  • the heat-sensitive medium layer includes a heat-sensitive material with a temperature coefficient of resistance greater than a set value, for example, the temperature coefficient of resistance may be greater than or equal to 0.015/K, which is beneficial to improve the detection sensitivity of the infrared detector.
  • the metal interconnection process is used to realize the electrical connection between the upper and lower metal interconnection layers, for example, to realize the electrical connection between the conductive layer in the first columnar structure 61 and the support base 42, and the through-hole process is used to form a connection between the upper and lower metal interconnection layers.
  • the IMD process is used to realize the isolation between the upper and lower metal interconnection layers, that is, electrical insulation, for example to realize
  • the electrical insulation between the electrode layer in the absorber plate 10 and the beam structure 11 and the reflector 41, the RDL process is the redistribution layer process, specifically refers to the redistribution of a layer of metal above the metal on the top layer of the circuit and has a metal connection with the metal on the top layer of the circuit Columns, such as tungsten columns are electrically connected, and the reflective layer 4 in the infrared detector can be prepared on the top metal of the CMOS measurement circuit system 1 by using the RDL process.
  • the support base 42 on the reflective layer 4 is connected to the top layer metal of the CMOS measurement circuit system 1. electrical connection.
  • the CMOS manufacturing process of the CMOS measurement circuit system 1 may also include a metal interconnection process and a through-hole process.
  • the CMOS measurement circuit system 1 includes a metal interconnection layer 101 arranged at intervals, a dielectric layer 102, and a A silicon substrate 103 is used, and the upper and lower metal interconnection layers 101 are electrically connected through via holes 104 .
  • the CMOS infrared sensing structure 2 includes a resonant cavity composed of a reflective layer 4 and a heat-sensitive medium layer and a suspended micro-bridge structure 40 for controlling heat transfer, and the CMOS measurement circuit system 1 is used to measure and process one or
  • the array resistance value formed by multiple CMOS infrared sensing structures 2 converts the infrared signal into an image electrical signal.
  • the infrared detector includes a plurality of infrared detector pixels arranged in an array, and each infrared detector pixel includes a CMOS Infrared sensing structure 2.
  • the resonant cavity for example, can be formed by the cavity between the reflective layer 4 and the heat-sensitive medium layer in the absorbing plate 10, and the infrared light passes through the absorbing plate 10 and is reflected back and forth in the resonant cavity to improve the detection sensitivity of the infrared detector. .
  • FIG. 14 is a schematic structural diagram of a CMOS measurement circuit system provided by an embodiment of the present invention.
  • the CMOS measurement circuit system 1 includes a bias voltage generation circuit 7, a column-level analog front-end circuit 8 and a row-level circuit 9, the input end of the bias voltage generation circuit 7 is connected to the output end of the row-level circuit 9, and the column-level The input end of the analog front-end circuit 8 is connected to the output end of the bias voltage generating circuit 7, the row-level circuit 9 includes a row-level mirror image element Rsm and a row selection switch K1, and the column-level analog front-end circuit 8 includes a blind pixel RD; wherein, The row-level circuit 9 is distributed in each pixel and selects the signal to be processed according to the row gating signal of the timing generation circuit, and outputs the current signal to the column-level analog front-end circuit 8 under the action of the bias voltage generation circuit 7 for current-voltage conversion Output; the row-level circuit 9 is controlled by the row selection switch K1 and is stro
  • the row-level circuit 9 includes a row-level mirror image element Rsm and a row selection switch K1, and the row-level circuit 9 is used for generating a third bias voltage VRsm according to the gate state of the row selection switch K1.
  • the row-level mirror image element Rsm can be subjected to light-shielding treatment, so that the row-level mirror image element Rsm is subjected to fixed radiation of a light-shielding sheet whose temperature is equal to the substrate temperature
  • the row selection switch K1 can be implemented with a transistor, and the row selection switch K1 is closed , the connection between the row-level mirror image element Rsm and the bias voltage generation circuit 7, that is, the row-level circuit 9 outputs the third bias voltage VRsm to the bias voltage generation circuit 7 when the row-level circuit 9 is controlled by the row selection switch K1 and is gated.
  • the bias voltage generation circuit 7 may include a first bias voltage generation circuit 71 and a second bias voltage generation circuit 72.
  • the first bias voltage generation circuit 71 is used to generate a first bias voltage V1 according to an input constant voltage.
  • the input constant voltage is, for example, Can be a positive supply signal with constant voltage.
  • the second bias voltage generation circuit 72 may include a bias voltage control subcircuit 721 and a plurality of gate drive subcircuits 722, and the bias voltage control subcircuit 721 is used to control the gate drive subcircuit 722 to generate corresponding The second bias voltage V2.
  • the column-level analog front-end circuit 8 includes a plurality of column control sub-circuits 81, and the column control sub-circuit 81 and the gate drive sub-circuit 722 are set correspondingly.
  • the column control sub-circuit 81 and the gate drive sub-circuit 722 can be arranged one by one
  • the gate driving subcircuit 722 is configured to provide the second bias voltage V2 to the corresponding column control subcircuit 81 according to its own gate state.
  • the gate driving subcircuit 722 when the gate driving subcircuit 722 is gated, the gate driving subcircuit 722 provides the second bias voltage V2 to the corresponding column control subcircuit 81; when the gate driving subcircuit 722 is not gated , the gate driving subcircuit 722 stops providing the second bias voltage V2 to the corresponding column control subcircuit 81 .
  • the column-level analog front-end circuit 8 includes an effective pixel RS and a blind pixel RD.
  • the column control subcircuit is used to generate the first current I1 according to the first bias voltage V1 and the blind pixel RD, and to generate the first current I1 according to the second bias voltage V2 and the blind pixel RD.
  • the effective pixel RS generates the second current I2, and the difference between the first current I1 and the second current I2 is transimpedance amplified and then output.
  • the temperature drift of the row-level image pixel Rsm and the effective pixel RS at the same ambient temperature same amount.
  • the row-level mirror image element Rsm is thermally insulated from the CMOS measurement circuit system 1, and the row-level mirror image element Rsm is subjected to light-shielding treatment, and the row-level mirror image element Rsm is subjected to a shading film whose temperature is equal to the substrate temperature. fixed radiation.
  • the absorption plate 10 of the effective pixel RS is thermally insulated from the CMOS measurement circuit system 1 , and the effective pixel RS receives external radiation. Both the absorbing plate 10 of the row-level mirrored pixel Rsm and the effective pixel RS are thermally insulated from the CMOS measurement circuit system 1 , so both the row-level mirrored pixel Rsm and the effective pixel RS have a self-heating effect.
  • both the row-level mirror image element Rsm and the effective pixel RS change in resistance due to Joule heat, but the row-level mirror image element Rsm and the effective pixel RS
  • the resistance value of the row-level mirror pixel Rsm and the effective pixel RS are the same, and the temperature coefficient of the two is also the same.
  • the temperature drift of the two is the same under the same ambient temperature, and the changes of the two are synchronized.
  • the bias control subcircuit 721 is used to control the gate drive subcircuits 722 to generate corresponding The second bias voltage V2, so that each row of pixels has one drive to individually drive the entire column of pixels in this row, reducing the requirements for the second bias voltage V2, that is, improving the driving capability of the bias voltage generating circuit 7, which is beneficial
  • a larger-scale infrared detector pixel array is driven by a CMOS measurement circuit system 1 .
  • the detailed working principle of the CMOS measurement circuit system 1 is well known to those skilled in the art, and will not be repeated here.
  • the CMOS infrared sensing structure 2 may be prepared on a layer above or on the same layer as the metal interconnection layer of the CMOS measurement circuit system 1 .
  • the metal interconnection layer of the CMOS measurement circuit system 1 here can be the top layer metal in the CMOS measurement circuit system 1.
  • the CMOS infrared sensing structure 2 is electrically connected to the CMOS measuring circuit system 1 through the support base 42 located on the upper layer of the metal interconnection layer of the CMOS measuring circuit system 1, so as to transmit the electrical signal converted from the infrared signal to the CMOS measurement circuitry1.
  • Fig. 15 is a schematic cross-sectional structure diagram of another infrared detector provided by an embodiment of the present invention.
  • the CMOS infrared sensing structure 2 can be prepared on the same layer as the metal interconnection layer of the CMOS measurement circuit system 1, that is, the CMOS measurement circuit system 1 and the CMOS infrared sensing structure 2 are arranged on the same layer, for example, as shown in FIG. 15 , the CMOS infrared sensing structure 2 is located on one side of the CMOS measurement circuit system 1 , and the top of the CMOS measurement circuit system 1 can also be provided with an airtight release insulating layer 3 to protect the CMOS measurement circuit system 1 .
  • the sacrificial layer is used to make the CMOS infrared sensing structure 2 form a hollow structure
  • the material constituting the sacrificial layer is silicon oxide
  • the sacrificial layer is etched by a post-CMOS process.
  • the post-CMOS process may use at least one of gaseous hydrogen fluoride, carbon tetrafluoride and trifluoromethane, which are corrosive to silicon oxide, to etch the sacrificial layer.
  • the absorbing plate 10 is used to absorb infrared target signals and convert the infrared target signals into electrical signals.
  • the absorbing plate 10 includes a metal interconnection layer and at least one heat-sensitive dielectric layer.
  • the metal interconnection layer in the absorbing plate 10 is The electrode layer in the absorbing plate 10 is used to transmit the electrical signal converted from the infrared signal.
  • the electrode layer in the absorbing plate 10 includes two patterned electrode structures, and the two patterned electrode structures respectively output positive electrical signals and ground electrical signals , the positive electrical signal and the ground electrical signal are transmitted to the corresponding support base 42 through different second columnar structures 62 , different beam structures 11 and different first columnar structures 61 , and then transmitted to the CMOS measurement circuit system 1 .
  • the beam structure 11 includes at least a metal interconnection layer, the metal interconnection layer in the beam structure 11 is an electrode layer in the beam structure 11 , and the electrode layer in the beam structure 11 is electrically connected to the electrode layer in the absorbing plate 10 .
  • the first columnar structure 61 uses a metal interconnection process and a via process to connect the corresponding beam structure 11 and the CMOS measurement circuit system 1.
  • FIG. 2 to FIG. 8, FIG. 12 and FIG. The through hole in the sacrificial layer between the layer 4 and the corresponding beam structure 11, that is, the beam structure 11 that is directly electrically connected to the first columnar structure 61, and the corresponding beam structure 11, that is, the beam structure that is directly electrically connected to the first columnar structure 61
  • the electrode layer in 11 is electrically connected, and the lower part of the first columnar structure 6 needs to be electrically connected to the corresponding support base 42 through the through hole penetrating the dielectric layer on the support base 42, so that the electrode layer in the beam structure 11 can pass through the corresponding first
  • the columnar structure 61 is electrically connected to the corresponding supporting base 42 .
  • the second columnar structure 62 connects the corresponding absorbing plate 10 and the corresponding beam structure 11 using metal interconnection technology and through-hole technology.
  • the second columnar structure 62 needs to pass through the corresponding absorber plate 10, that is, the absorber plate 10 that is directly electrically connected to the second columnar structure 62 and the corresponding beam structure 11, that is, the sacrificial beam structure 11 that is directly electrically connected to the second columnar structure 62
  • the through hole of the layer is electrically connected to the corresponding absorbing plate 10, that is, the electrode layer in the absorbing plate 10 that is directly electrically connected to the second columnar structure 62.
  • the lower part of the second columnar structure 62 needs to pass through and cover the corresponding beam structure 11. That is, the through hole covering the dielectric layer of the electrode layer in the beam structure 11 directly electrically connected to the second columnar structure 62 is electrically connected to the corresponding beam structure 11, that is, the electrode layer in the beam structure 11 directly electrically connected to the second columnar structure 62. connect.
  • the top of the second columnar structure 62 needs to pass through the corresponding absorber plate 10 , that is, the absorber plate 10 that is directly electrically connected to the second columnar structure 62 and the corresponding beam structure 11 , that is, the second columnar structure 62 .
  • the through hole of the sacrificial layer between the directly electrically connected beam structures 11 is electrically connected to the corresponding beam structure 11, that is, the electrode layer in the beam structure 11 directly electrically connected to the second columnar structure 62, and the bottom of the second columnar structure 62 It is necessary to pass through the through hole covering the dielectric layer of the electrode layer in the absorption plate 10 that is directly electrically connected to the corresponding absorption plate 10, that is, the second columnar structure 62, and the corresponding absorption plate 10, that is, to be directly connected to the second columnar structure 62.
  • the electrode layers in the electrically connected absorber plate 10 are electrically connected.
  • the reflective plate 41 is used to reflect infrared signals and form a resonant cavity with the heat-sensitive medium layer, that is, the reflective plate 41 is used to reflect infrared signals and form a resonant cavity with the heat-sensitive medium layer.
  • the reflective layer 4 includes at least one metal interconnection layer, metal The interconnection layer is used to form the support base 42 and is also used to form the reflection plate 41 .
  • the beam structure 11 includes a first dielectric layer 13, a first electrode layer 14, and a second dielectric layer 15, and the absorbing plate 10 includes a third dielectric layer 130 and a second electrode layer 140, or the absorbing plate 10 includes a second electrode layer layer 140 and a fourth dielectric layer 150, or the absorbing plate 10 includes a third dielectric layer 130, a second electrode layer 140 and a fourth dielectric layer 150, or the absorbing plate 10 includes a support layer, a third dielectric layer 130, a second electrode layer 140 and the fourth dielectric layer 150, or the absorption plate 10 includes the third dielectric layer 130, the second electrode layer 140, the fourth dielectric layer 150 and the passivation layer, or the absorption plate 10 includes the support layer, the third dielectric layer 130, the second Two electrode layers 140, a fourth dielectric layer 150 and a passivation layer; wherein, the material forming the first dielectric layer 13 comprises a temperature coefficient of resistance greater than the set temperature coefficient of amorphous silicon, amorphous germanium, amorphous
  • the material constituting the second dielectric layer 15 includes at least one of the materials with a temperature coefficient of resistance greater than the set value prepared by amorphous silicon, amorphous germanium, amorphous silicon germanium or amorphous carbon
  • the material constituting the third dielectric layer 130 includes at least one of materials with a temperature coefficient of resistance greater than a set value prepared by amorphous silicon, amorphous germanium, amorphous germanium silicon or amorphous carbon, constituting the fourth dielectric
  • the material of the layer 150 includes at least one of materials made of amorphous silicon, amorphous germanium, amorphous silicon germanium or amorphous carbon with a temperature coefficient of resistance greater than a set value, such as 0.015/K.
  • the beam structure 11 includes a first dielectric layer 13 and a first electrode layer 14 in sequence.
  • the absorbing plate 10 includes the third dielectric layer 130, the second electrode layer 140 and the fourth dielectric layer 150 in turn, that is, the beam structure 11 and the film layer of the absorbing plate 10 can be configured to be the same, and the first
  • the material of the dielectric layer 13 includes at least one of materials with a temperature coefficient of resistance greater than a set value prepared by amorphous silicon, amorphous germanium, amorphous germanium silicon or amorphous carbon
  • the material constituting the second dielectric layer 15 includes Amorphous silicon, amorphous germanium, amorphous germanium silicon or amorphous carbon is at least one of materials with a temperature coefficient of resistance greater than a set value
  • the material constituting the third dielectric layer 130 includes amorphous silicon, amorphous germanium At least one of the materials whose temperature coefficient of resistance is greater than the set value, amorphous silicon germanium or amorphous carbon
  • the material constituting the fourth dielectric layer 150 includes amorphous silicon, amorphous germanium
  • the third dielectric layer 130 serves as a thermally sensitive dielectric layer while serving as a supporting layer
  • the fourth dielectric layer 150 also serves as a thermally sensitive dielectric layer while serving as a passivation layer, which is beneficial to reduce the absorption plate 10 and
  • the thickness of the beam structure 11 reduces the thermal conductivity of the beam structure 11 and simplifies the manufacturing process of the infrared detector.
  • the support layer is used to support the film layer above the support layer after releasing the sacrificial layer below the support layer
  • the heat-sensitive medium layer is used to convert the infrared temperature detection signal into an infrared detection electrical signal
  • the second electrode layer 140 and The first electrode layer 14 is used to transmit the infrared detection electrical signal converted from the heat-sensitive medium layer in the absorption plate 10 to the CMOS measurement circuit system 1 through the beam structures 11 on the left and right sides, and the two beam structures 11 respectively transmit the infrared detection electrical signal.
  • the positive and negative signals of the signal, the readout circuit in the CMOS measurement circuit system 1 realizes non-contact infrared temperature detection through the analysis of the obtained infrared detection electrical signal, and the passivation layer is used to protect the electrode layer wrapped by the passivation layer Not oxidized or corroded.
  • the first electrode layer 14 is located in the closed space formed by the first dielectric layer 13, that is, the support layer, and the second dielectric layer 15, that is, the passivation layer, so as to realize the protection of the first electrode layer 14 in the beam structure 11
  • the second electrode layer 140 is located in the closed space formed by the third dielectric layer 130, i.e. the support layer and the fourth dielectric layer 150, i.e. the passivation layer, realizing the second electrode layer 140 in the absorption plate 10 Protect.
  • the material constituting the first dielectric layer 13 includes at least one of amorphous silicon, amorphous germanium, amorphous germanium silicon or amorphous carbon
  • the material having a temperature coefficient of resistance greater than a set value constitutes the second dielectric layer 13.
  • the material of the second dielectric layer 15 includes at least one of materials with a temperature coefficient of resistance greater than a set value prepared by amorphous silicon, amorphous germanium, amorphous germanium silicon or amorphous carbon
  • the material constituting the third dielectric layer 130 includes At least one of materials with a temperature coefficient of resistance greater than a set value made of amorphous silicon, amorphous germanium, amorphous silicon germanium or amorphous carbon
  • the material constituting the fourth dielectric layer 150 includes amorphous silicon, amorphous
  • the film layers in the beam structure 11 and the absorbing plate 10 can also meet the following conditions: Situation: The first situation can be set along the direction away from the CMOS measurement circuit system 1, the beam structure 11 includes the first dielectric layer 13, the first electrode layer 14 and the second dielectric layer 15 in sequence, and the absorbing
  • the absorbing plate 10 sequentially includes a supporting layer, a third dielectric layer 130, a second electrode layer 140 and a fourth dielectric layer 150 or the absorbing plate 10 sequentially includes a supporting layer, a second electrode layer 140, a third dielectric layer 130 and a fourth dielectric layer
  • the four dielectric layers 150 or the absorption plate 10 sequentially include a support layer, a third dielectric layer 130, a fourth dielectric layer 150 and a second electrode layer 140; in the fourth case, the beam structure 11 can be set along the direction away from the CMOS measurement circuit system 1.
  • the first dielectric layer 13, the first electrode layer 14 and the second dielectric layer 15 are included in sequence, and the absorption plate 10 includes the third dielectric layer 130, the second electrode layer 140, the fourth dielectric layer 150 and the passivation layer or the absorption plate 10 in sequence.
  • the second electrode layer 140, the third dielectric layer 130, the fourth dielectric layer 150 and the passivation layer or the absorption plate 10 sequentially include the third dielectric layer 130, the fourth dielectric layer 150, the second electrode layer 140 and the passivation layer
  • the fifth case can be set along the direction away from the CMOS measurement circuit system 1, the beam structure 11 includes the first dielectric layer 13, the first electrode layer 14 and the second dielectric layer 15 in sequence, and the absorbing plate 10 includes the supporting layer, the third The dielectric layer 130, the second electrode layer 140, the fourth dielectric layer 150 and the passivation layer or the absorption plate 10 sequentially include the supporting layer, the second electrode layer 140, the third dielectric layer 130, the fourth dielectric layer 150 and the passivation layer or The absorption plate 10 sequentially includes a supporting layer, a third dielectric layer 130 , a fourth dielectric layer 150 , a second electrode layer 140 and a passivation layer.
  • the first dielectric layer 13, the second dielectric layer 15, the third dielectric layer 130 and the fourth dielectric layer 15- can all serve as heat-sensitive dielectric layers, and are located at the bottom of the beam structure 11 or the absorption plate 10
  • the dielectric layer can also serve as a supporting layer, and the dielectric layer located on the top of the beam structure 11 or the absorbing plate 10 can also serve as a passivation layer.
  • the beam structure 11 includes the first electrode layer 14, or the beam structure 11 includes the first dielectric layer 13 and the first electrode layer 14, or the beam structure 11 includes the first electrode layer 14 and the second dielectric layer 15, or the beam
  • the structure 11 includes a first electrode layer 14 and a first heat-sensitive dielectric layer, or the beam structure 11 includes a first dielectric layer 13, a first electrode layer 14, and a second dielectric layer 15, or the beam structure 11 includes a first dielectric layer 13,
  • the absorption plate 10 comprises the second electrode layer 140 and the second heat-sensitive medium layer 120, or the absorption plate 10 comprises the third medium layer 130, the second electrode layer 140 and the second heat-sensitive medium layer 120, or the absorption plate 10 comprises the second electrode layer 140, the second heat-sensitive medium layer 120 and
  • the material constituting the second dielectric layer 15 includes at least one of amorphous silicon, amorphous germanium, amorphous silicon germanium, aluminum oxide, or amorphous carbon
  • the material constituting the third dielectric layer 130 includes amorphous silicon, amorphous At least one of crystalline germanium, amorphous germanium silicon, aluminum oxide or amorphous carbon
  • the material constituting the fourth dielectric layer 150 includes amorphous silicon, amorphous germanium, amorphous germanium silicon, aluminum oxide or amorphous carbon
  • the material constituting the first heat-sensitive medium layer includes titanium oxide, vanadium oxide, amorphous silicon, amorphous germanium, amorphous silicon germanium, amorphous silicon germanium oxide,
  • the beam structure 11 includes a first dielectric layer 13, a first electrode layer 14, and a second dielectric layer 15 in sequence
  • the absorbing plate 10 includes a third dielectric layer in sequence. 130, the second electrode layer 140, the second thermally sensitive medium layer 120 and the fourth medium layer 150, at this time the first medium layer 13 and the third medium layer 130 both act as supporting layers, the second medium layer 15 and the fourth medium layer 150 serve as a passivation layer, and the second heat-sensitive medium layer 120 converts infrared signals into electrical signals.
  • the first electrode layer 14 is located in the closed space formed by the first dielectric layer 13, that is, the support layer, and the second dielectric layer 15, that is, the passivation layer. Protection: Corresponding to the absorption plate 10, the second electrode layer 140 is located in the closed space formed by the third dielectric layer 130, that is, the supporting layer and the fourth dielectric layer 150, that is, the passivation layer, so as to realize the protection of the second electrode layer in the absorption plate 10. 140 protection.
  • the material constituting the first dielectric layer 13 includes at least one of amorphous silicon, amorphous germanium, amorphous silicon germanium, aluminum oxide or amorphous carbon
  • the material constituting the second dielectric layer 15 includes amorphous silicon , amorphous germanium, amorphous germanium silicon, aluminum oxide or amorphous carbon
  • the material constituting the third dielectric layer 130 includes amorphous silicon, amorphous germanium, amorphous germanium silicon, aluminum oxide or amorphous carbon
  • the material constituting the fourth dielectric layer 150 includes at least one of amorphous silicon, amorphous germanium, amorphous silicon germanium, aluminum oxide or amorphous carbon
  • the beam structure 11 and The film layer in the absorbing board 10 can also meet the following conditions: In the first case, the beam structure 11 can be set to include the first electrode layer 14, and along the direction away from the CMOS measurement circuit system 1, the absorbing board 10 can include the second electrode layer in turn 140 and the
  • the beam structure 11 can be set to include the first electrode layer 14, and along the direction away from the CMOS measurement circuit system 1, the absorption plate 10 includes the second electrode layer 140, the second heat-sensitive medium layer 120 and the second electrode layer 140 in sequence.
  • the fourth dielectric layer 150 or the absorption plate 10 includes the second heat-sensitive dielectric layer 120, the second electrode layer 140 and the fourth dielectric layer 150 in sequence; in the fourth case, the beam structure 11 can include the first electrode layer 14, and the To measure the direction of the circuit system 1, the absorbing board 10 includes the third dielectric layer 130, the second electrode layer 140, the second heat-sensitive dielectric layer 120 and the fourth dielectric layer 150 or the absorbing board 10 includes the third dielectric layer 130, the second Two heat-sensitive dielectric layers 120 , a second electrode layer 140 and a fourth dielectric layer 150 .
  • the beam structure 11 includes the first dielectric layer 13 and the first electrode layer 14 in sequence or the beam structure 11 includes the first electrode layer 14 and the second dielectric layer 15 in sequence
  • the absorption plate 10 includes the second electrode layer 140 and the second heat-sensitive medium layer 120 in sequence or the absorption plate 10 includes the second heat-sensitive medium layer 120 and the second electrode layer 140 in sequence; 1 direction, the beam structure 11 includes the first dielectric layer 13 and the first electrode layer 14 in sequence or the beam structure 11 includes the first electrode layer 14 and the second dielectric layer 15 in sequence, and the absorbing plate 10 includes the third dielectric layer 130 and the second dielectric layer in sequence
  • the second electrode layer 140 and the second thermally sensitive medium layer 120 or the absorption plate 10 includes the third dielectric layer 130, the second thermally sensitive medium layer 120 and the second electrode layer 140 in sequence; 1, the beam structure 11 includes the first dielectric layer 13 and the first electrode layer 14 in sequence or the beam structure 11 includes the first electrode layer 14 and the second dielectric layer 15 in sequence, and
  • the ninth case can be set along the direction away from the CMOS measurement circuit system 1, the beam structure 11 sequentially includes the first electrode layer 14 and the first thermally sensitive medium layer and the absorbing plate 10 sequentially includes the second electrode layer 140 and the second thermally sensitive medium layer Layer 120, or the beam structure 11 sequentially includes the first thermally sensitive dielectric layer and the first electrode layer 14 and the absorption plate 10 sequentially includes the second thermally sensitive dielectric layer 120 and the second electrode layer 140; the tenth case can be set along the Measuring the direction of the circuit system 1, the beam structure 11 sequentially includes the first electrode layer 14 and the first heat-sensitive medium layer and the absorption plate 10 sequentially includes the third dielectric layer 130, the second electrode layer 140 and the second heat-sensitive medium layer 120, Or the beam structure 11 sequentially includes the first thermally sensitive medium layer and the first electrode layer 14 and the absorption plate 10 sequentially comprises the third dielectric layer 130, the second thermally sensitive medium layer 120 and the second electrode layer 140; the eleventh case can Set along the direction away from the CMOS measurement circuit system 1,
  • the material constituting the first dielectric layer 13 includes at least one of amorphous silicon, amorphous germanium, amorphous silicon germanium, aluminum oxide or amorphous carbon
  • the material constituting the second dielectric layer 15 includes at least one of amorphous silicon, amorphous germanium, amorphous germanium silicon, aluminum oxide or amorphous carbon
  • the material constituting the third dielectric layer 130 includes amorphous silicon, amorphous germanium, amorphous germanium silicon, oxide
  • the material constituting the fourth dielectric layer 150 includes at least one of amorphous silicon, amorphous germanium, amorphous silicon germanium, aluminum oxide or amorphous carbon
  • Various combination modes of one film layer of the structure 11 and one film layer of the absorbing plate 10 that is, one film layer of the beam structure 11 and one film layer of the absorbing plate 10 can be combined arbitr
  • the materials constituting the first electrode layer 14 may include titanium, titanium nitride, tantalum, tantalum nitride, titanium-tungsten alloy, nickel-chromium alloy, nickel-platinum alloy, nickel-silicon alloy, nickel, chromium, platinum, tungsten At least one of aluminum or copper, wherein when at least one of titanium, titanium nitride, tantalum or tantalum nitride is used as the material of the first electrode layer 14, the first electrode layer 14 is preferably set to be first The dielectric layer 13 and the second dielectric layer 15 cover to prevent the first electrode layer 14 from being affected by the etching process.
  • the material constituting the second electrode layer 140 includes titanium, titanium nitride, tantalum, tantalum nitride, titanium-tungsten alloy, nickel-chromium alloy, nickel-platinum alloy, nickel-silicon alloy, nickel, chromium, platinum, tungsten, aluminum or copper. At least one, wherein when at least one of titanium, titanium nitride, tantalum or tantalum nitride is used as the material of the second electrode layer 140, the second electrode layer 140 is preferably set to be surrounded by the third dielectric layer 130 and the fourth The dielectric layer 150 covers to prevent the second electrode layer 140 from being affected by the etching process.
  • At least one hole-like structure can be formed on the absorbing plate 10, the hole-like structure at least penetrates the dielectric layer in the absorbing plate 10, and at least one hole-like structure is formed on the beam structure 11, when the beam structure 11
  • the hole-like structure on the beam structure 11 runs through the first electrode layer 14 in the beam structure 11;
  • the beam structure 11 includes a dielectric layer, the hole-like structure at least runs through the medium in the beam structure 11 layer, taking the infrared detector with the structure shown in Figure 2 as an example
  • the hole-like structure on the absorbing plate 10 can penetrate the third dielectric layer 130 and the fourth dielectric layer 150 in the absorbing plate 10 at this time, and the holes on the absorbing plate 10
  • the hole-like structure can also run through the third dielectric layer 130, the second electrode layer 140 and the fourth dielectric layer 150 in the absorbing plate 10, and the hole-like structure on the beam structure 11 can run through the position where the first electrode layer 14 is not set in the beam structure 11.
  • the first dielectric layer 13 and the second dielectric layer 15 , or the hole-like structure on the beam structure 11 runs through the first dielectric layer 13 , the electrode layer 14 and the second dielectric layer 15 in the beam structure 11 .
  • the hole-like structure on the absorbing plate 10 can penetrate the third dielectric layer 130 and the fourth dielectric layer 150 in the absorbing plate 10, and the hole-like structure on the absorbing plate 10 It can also run through the third dielectric layer 130, the second electrode layer 140 and the fourth dielectric layer 150 in the absorbing plate 10, and the hole structure on the absorbing plate 10 can also penetrate the third dielectric layer 130, the second electrode layer 150 in the absorbing plate 10
  • the electrode layer 140, the second heat-sensitive dielectric layer 120 and the fourth dielectric layer 150, the hole-like structure on the beam structure 11 can penetrate the first dielectric layer 13 and the second The dielectric layer 15 , or the hole-like structure on the beam structure 11 runs through the first dielectric layer 13 , the electrode layer 14 and the
  • the infrared detector can be configured to further include a metamaterial structure and/or a polarization structure, and the metamaterial structure or the polarization structure is at least one metal interconnection layer.
  • Fig. 16 is a schematic diagram of the three-dimensional structure of another infrared detector provided by an embodiment of the present invention.
  • the metal interconnection layer constituting the metamaterial structure may include a plurality of metal repeating units 20 arranged in an array, each The metal repeating unit includes two L-shaped patterned structures 21 arranged diagonally. At this time, the infrared absorption spectrum of the infrared detector is in the band of 3 microns to 30 microns.
  • a plurality of patterned hollow structures 22 arranged in an array are arranged on the metal interconnection layer constituting the metamaterial structure, and the patterned hollow structures 22 are in the shape of an open ring.
  • the infrared detector The infrared absorption spectrum ranges from 3 microns to 30 microns. It can also be shown in FIG. 18 that a plurality of straight strip structures 23 and a plurality of folded strip structures 24 are arranged on the metal interconnection layer constituting the metamaterial structure, and the straight strip structures 23 and the folded strip structures 24 are vertically Arranged alternately in the direction of the straight strip structure 23, the infrared absorption spectrum of the infrared detector is in the band of 8 microns to 24 microns.
  • a plurality of patterned hollow structures 25 arranged in an array are arranged on the metal interconnection layer constituting the metamaterial structure, and the patterned hollow structures 25 are regular hexagons.
  • the infrared sensor of the infrared detector The absorption spectrum ranges from 3 microns to 30 microns. It should be noted that, the embodiment of the present invention does not limit the specific pattern on the metal interconnection layer constituting the metamaterial structure, it only needs to ensure that the repeated pattern can realize the function of the metamaterial structure or the polarization structure.
  • a metamaterial is a material based on the generalized Snell's law that regulates electromagnetic or optical beams by controlling the wavefront phase, amplitude, and polarization. It can also be called a metasurface or a superstructure.
  • the thin two-dimensional array plane can flexibly and effectively manipulate the phase, polarization and propagation modes of electromagnetic waves.
  • the embodiment of the present invention utilizes the patterned structure shown in Figure 16 to Figure 19 to form an electromagnetic metamaterial structure, that is, an artificial composite structure or composite material with extraordinary electromagnetic properties is formed to realize the tailoring of the electromagnetic wave and light wave performance, thereby obtaining A special device for absorbing electromagnetic waves.
  • a metamaterial structure formed by a patterned structure is combined with an infrared detector structure.
  • the infrared electromagnetic wave absorbed by the metamaterial structure will enhance the infrared electromagnetic wave signal absorbed by the infrared detector itself.
  • the infrared electromagnetic wave is superimposed with the infrared electromagnetic wave absorbed by the microbridge detector structure itself, and the infrared electromagnetic wave absorbed by the metamaterial structure is coupled with the incident infrared electromagnetic wave component, that is to say, the setting of the metamaterial structure increases the intensity of the absorbed infrared electromagnetic wave signal , thereby improving the absorption rate of the infrared detector to the incident infrared electromagnetic wave.
  • FIG. 20 is a schematic top view of a polarization structure provided by an embodiment of the present invention.
  • the polarization structure 26 can include several gratings 27 arranged in sequence, the interval between adjacent gratings 27 is 10nm to 500nm, the grating 27 can be linear as shown in Figure 20, or can be as shown in Figure 21 and 22 shows a curved type, and the grating 27 in the polarization structure 26 can be rotated or combined at any angle.
  • the arrangement of the polarization structure 26 can make the CMOS sensing structure absorb polarized light in a specific direction.
  • the grating 27 may be an etched metal thin film, that is, a structure formed by etching a metal interconnection layer.
  • polarization is an important information of light.
  • Polarization detection can expand the amount of information from three dimensions, such as light intensity, spectrum, and space, to seven dimensions, such as light intensity, spectrum, space, polarization degree, polarization azimuth, and polarization ellipsoid. Because the polarization degree of the ground object background is much smaller than that of the artificial target, the infrared polarization detection technology has a very important application in the field of space remote sensing.
  • the polarization element is independent of the detector, and it is necessary to add a polarizer to the lens of the whole machine, or design a polarization lens. This method is relatively expensive and difficult to design.
  • the polarization information is obtained by rotating the polarization element.
  • the disadvantage of this existing polarization detection system is that the optical elements are complex and the optical path system is complicated.
  • the polarization image collected through the combination of polarizer and detector needs to be processed by image fusion algorithm, which is not only complicated but also relatively inaccurate.
  • the CMOS measurement circuit system 1 only needs to process the signal detected by the infrared detector to obtain accurate image information without performing on-site Image fusion with detectors greatly improves the authenticity and effectiveness of images.
  • the polarizing structure 26 can also be located above the absorbing plate 10 without being in contact with the absorbing plate 10, that is, the polarizing structure 26 can be a suspended structure located above the suspended micro-bridge structure 40, and the polarizing structure 26 and the suspended micro-bridge structure 40 can use pillars
  • the way of connecting the support or the way of bonding the support, the polarizing structure 26 and the infrared detector pixel can be bonded in one-to-one correspondence, or the whole chip can be bonded. Therefore, the independently suspended metal grating structure will not cause deformation of the infrared-sensitive micro-bridge structure, and will not affect the heat-sensitive characteristics of the sensitive thin film.
  • the metamaterial structure is at least one metal interconnection layer
  • the polarization structure is at least one metal interconnection layer
  • the suspended microbridge structure 40 includes a third dielectric layer 130 and a fourth dielectric layer
  • the metamaterial structure or polarization structure may be at least one metal interconnection layer on the side of the third dielectric layer 130 adjacent to the CMOS measurement circuit system 1, for example, the metal interconnection layer constituting the metamaterial structure or polarization structure may be located at the first
  • the third dielectric layer 130 is disposed adjacent to one side of the CMOS measurement circuit system 1 and in contact with the third dielectric layer 130 .
  • the metamaterial structure or polarization structure can also be set to be at least one layer of metal interconnection on the side of the fourth dielectric layer 150 away from the CMOS measurement circuit system 1, for example, the metal interconnection constituting the metamaterial structure or polarization structure can be set The layer is located on the side of the fourth dielectric layer 150 away from the CMOS measurement circuit system 1 and is arranged in contact with the fourth dielectric layer 150 .
  • the metamaterial structure or the polarization structure can also be set as at least one metal interconnection layer located between the third dielectric layer 130 and the fourth dielectric layer 150 and electrically insulated from the second electrode layer 140, for example, it can be configured to
  • the metal interconnection layer of the metamaterial structure or the polarization structure is located between the third dielectric layer 130 and the second electrode layer 140 and is electrically insulated from the second electrode layer 140 or is located between the fourth dielectric layer 150 and the second electrode layer 140 and It is electrically insulated from the second electrode layer 140 .
  • the second electrode layer 140 may also be set as a metamaterial structure layer or a polarization structure layer, that is, the patterned structure described in the above-mentioned embodiments may be formed on the second electrode layer 140 .
  • the first columnar structure 61 includes at least one layer of solid columnar structures, and the solid columnar structure includes a solid structure 601.
  • FIG. 6 and FIG. 7 exemplarily set the solid columnar structure 61.
  • the sidewall of the structure 601 is covered with at least one dielectric layer 602 and the solid structure 601 is placed in contact with a dielectric layer 602.
  • Figure 6 and Figure 7 exemplarily set the sidewall coating of the solid structure 601 of the first columnar structure 61
  • the material of the solid structure 601 constituting the first columnar structure 61 includes at least one of tungsten, copper or aluminum
  • the material constituting the dielectric layer 602 may include oxide Silicon, silicon nitride, silicon carbide, amorphous carbon, aluminum oxide, titanium oxide, vanadium oxide, amorphous silicon, amorphous germanium, amorphous silicon germanium, amorphous silicon germanium oxide, silicon, germanium, silicon germanium, germanium oxide At least one of silicon, graphene, copper or platinum.
  • the at least one dielectric layer 602 covering the solid structure 601 of the first columnar structure 61 can serve as electrical insulation, and the solid structure 601 of the first columnar structure 61 is protected by the dielectric layer 602 to prevent external materials from corroding the first
  • the dielectric layer 602 can be used as an auxiliary support structure for the first columnar structure 61, and it supports the suspended micro-bridge structure 40 together with the solid structure 601 of the first columnar structure 61, which is beneficial to improve the first columnar structure.
  • the mechanical stability of the structure 61 thereby improving the structural stability of the infrared sensor.
  • the material for the dielectric layer 602 that constitutes the first columnar structure 61 may include silicon oxide, silicon nitride, silicon carbide, amorphous carbon, aluminum oxide, titanium oxide, vanadium oxide, amorphous silicon, amorphous germanium, amorphous At least one of silicon germanium, amorphous silicon germanium, silicon, germanium, silicon germanium, silicon germanyl, graphene, copper or platinum, none of which will be corroded by gaseous hydrogen fluoride, carbon tetrafluoride or trifluoromethane Therefore, the dielectric layer 602 covering the solid structure 601 of the first columnar structure 61 will not be corroded when the sacrificial layer is etched by gaseous hydrogen fluoride, carbon tetrafluoride and trifluoromethane in subsequent process steps.
  • the dielectric layer 602 of the solid structure 601 covering the first columnar structure 61 can be set as the first dielectric layer 13 in the beam structure 11, and the dielectric layer 602 covering the first columnar structure 61
  • the dielectric layer of the solid structure 601 can be a separately produced dielectric layer, or the dielectric layer of the solid structure 601 covering the first columnar structure 61 can also be set as the second dielectric layer 15 or the first heat-sensitive dielectric layer in the beam structure 11 .
  • Fig. 23 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the present invention.
  • Fig. 23 only exemplarily shows the first columnar structure 61 and part of the beam structure 11, and does not show the structure above the beam structure 11.
  • the infrared detector of the structure is arranged in contact with the sidewall of the solid structure 601 of the first columnar structure 61 and the sacrificial layer (not shown in FIG.
  • the material of the solid structure 601 constituting the first columnar structure 61 includes at least one of tungsten, copper or aluminum, that is, the first columnar structure 61 is set only Including solid tungsten pillars, or copper pillars or aluminum pillars, the side walls of the solid structure 601 of the first pillar structure 61 are arranged in contact with the sacrificial layer, so that the preparation process of the first pillar structure 61 is relatively simple and easy to implement, which is beneficial to reduce The preparation difficulty of the whole infrared detector.
  • Fig. 24 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the present invention.
  • Fig. 24 also only schematically shows the first columnar structure 61 and part of the beam structure 11, and does not show the structure above the beam structure 11.
  • the infrared detector with the structure shown in FIG. 24 is provided with the side wall of the solid structure 601 of the first columnar structure 61 and the surface of the solid structure 601 of the first columnar structure 61 adjacent to the CMOS measurement circuit system 1 is coated with at least one adhesive layer 603 , FIG.
  • the 24 exemplarily sets the sidewall of the solid structure 601 of the first columnar structure 61 and the surface of the solid structure 601 of the first columnar structure 61 adjacent to the CMOS measurement circuit system 1 is coated with an adhesive layer 603, the first columnar structure
  • the outermost adhesive layer 603 in 61 is covered with a dielectric layer 604 away from the sidewall of the solid structure 601 of the first columnar structure 61, and the material constituting the solid structure 601 of the first columnar structure 61 includes at least one of tungsten, copper or aluminum.
  • the material constituting the adhesion layer 603 includes at least one of titanium, titanium nitride, tantalum or tantalum nitride
  • the material constituting the dielectric layer 604 includes silicon oxide, silicon nitride, silicon carbide, amorphous carbon, oxide At least one of aluminum, titanium oxide, vanadium oxide, amorphous silicon, amorphous germanium, amorphous germanium silicon, amorphous germanyl silicon, silicon, germanium, germanium silicon, germanyl silicon, graphene, copper or platinum.
  • the adhesive layer 603 is used to enhance the connection performance between the first columnar structure 61 and the support base 42, including the mechanical connection performance of the enhancer, improving structural stability, and also including the electrical connection performance of the enhancer, reducing contact resistance, Reduce the loss in the electrical signal transmission process, improve the infrared detection performance of the infrared detector, and by setting the adhesive layer 603 and also surround the side of the solid structure 601 of the first columnar structure 61, the contact between the adhesive layer 603 and the first columnar structure 61 can be increased.
  • the contact area of the solid structure 601 of the columnar structure 61 is equivalent to widening the transmission channel of the electrical signal, reducing the transmission resistance of the first columnar structure 61, thereby further reducing the transmission loss of the electrical signal, and improving the infrared detector's infrared detection performance.
  • the material constituting the adhesion layer 603 includes at least one of titanium, titanium nitride, tantalum or tantalum nitride, and at least one of the aforementioned four conductive materials is used to form the adhesion layer 603, which can meet the requirements of using the adhesion layer.
  • CMOS 603 enhances the requirements for the mechanical and electrical connection performance between the support base 42 and the first columnar structure 61 , and facilitates the realization of the requirements for preparing the adhesion layer 603 by CMOS technology, that is, meets the requirements for the integration of CMOS technology.
  • the outermost adhesive layer 603 in the first columnar structure 61 is further away from the side wall of the solid structure 601 of the first columnar structure 61 and covered with a dielectric layer 604, and the adhesive layer 603 is used to strengthen the first columnar structure 61 and the supporting base 42
  • the dielectric layer 604 covering the side wall of the adhesive layer 603 plays the role of insulation protection, and the dielectric layer 604 can be used to play the role of auxiliary support for the first columnar structure 61, so as to improve the infrared The structural stability and infrared detection performance of the detector.
  • the material that constitutes the dielectric layer 604 may include silicon oxide, silicon nitride, silicon carbide, amorphous carbon, aluminum oxide, titanium oxide, vanadium oxide, amorphous silicon, amorphous germanium, amorphous silicon germanium, amorphous At least one of silicon germanium, silicon, germanium, silicon germanium, silicon germanyl, graphene, copper, or platinum. None of the aforementioned materials will be corroded by gaseous hydrogen fluoride, carbon tetrafluoride, or trifluoromethane.
  • the dielectric layer 604 covering the adhesion layer 603 will not be corroded when the sacrificial layer is etched by gaseous hydrogen fluoride, carbon tetrafluoride and trifluoromethane. Exemplarily, as shown in FIG.
  • the adhesive layer 603 covering the solid structure 601 of the first columnar structure 61 can be set as the first electrode layer 14 in the beam structure 11, and the dielectric layer 604 covering the adhesive layer 603 As the first dielectric layer 13 in the beam structure 11, the adhesive layer 603 covering the solid structure 601 of the first columnar structure 61 and/or the dielectric layer covering the adhesive layer 603 can also be a film layer made separately, or The dielectric layer covering the adhesive layer 603 can also be set as the second dielectric layer 15 or the first heat-sensitive dielectric layer in the beam structure 11 .
  • the infrared detector may further include a first reinforcement structure 161, the first reinforcement structure 161 is set corresponding to the position of the first columnar structure 61, and the first reinforcement structure 161 is used to strengthen the first columnar structure 61 and the stability of the connection between the beam structure 11, the first reinforcement structure 161 includes a weighted block structure.
  • the setting of the first reinforcement structure 161 can effectively enhance the mechanical stability between the first columnar structure 61 and the beam structure 11, thereby improving the structural stability of the infrared detector pixel and the infrared detector including the infrared detector pixel. sex.
  • Fig. 25 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the present invention.
  • Fig. 25 also only schematically shows the first column structure 61 and part of the beam structure 11, and does not show the structure above the beam structure 11.
  • the side of the beam structure 11 away from the CMOS measurement circuit system 1 and the weighted block structure constituting the first reinforcing structure 161 are arranged in contact with the beam structure 11 .
  • the weighted block structure constituting the first reinforcement structure 161 is located on the side of the beam structure 11 away from the CMOS measurement circuit system 1 and the weighted block structure constituting the first reinforcement structure 161 is placed in contact with the beam structure 11, which is equivalent to A cover plate is added to the position of the beam structure 11 corresponding to the first columnar structure 61, and the weight of the first reinforcement structure 161 is used to press the beam structure, thereby enhancing the mechanical strength between the beam structure 11 and the first columnar structure 61, and improving infrared detection The structural stability of the device.
  • the beam structure 11 it is also possible to set the beam structure 11 to form a through hole corresponding to the position of the first columnar structure 61 , and the through hole exposes at least part of the first columnar structure 61 , constituting the weight block of the first reinforcement structure 161
  • the structure includes a first portion filling the via and a second portion outside the via, the orthographic projection of the second portion overlaying the orthographic projection of the first portion.
  • the beam structure 11 forms a hollow area corresponding to the position of the first columnar structure 61, that is, a through hole is formed, and the second part of the weighted block structure constituting the first reinforcement structure 161 outside the through hole and the weighted block in the through hole
  • the first part of the columnar structure is integrally formed, the first part fills or embeds in the through hole and is arranged in contact with the first columnar structure 61, the orthographic projection of the second part covers the orthographic projection of the first part, that is, the area of the second part is larger than that of the first part area.
  • the first reinforcement structure 161 is equivalent to a rivet structure composed of the first part and the second part, the bottom surface of the first part contacts the top surface of the columnar structure, and the side of the first part also contacts the hollow area formed by the beam structure The side surface of the second part contacts the outer surface of the through hole.
  • the first reinforcement structure 161 is used to press the beam structure 11 by its own gravity, the contact area between the first reinforcement structure 161, the first columnar structure 61 and the beam structure 11 is also increased, and the beam structure is further enlarged.
  • the mechanical strength between 11 and the first columnar structure 61 improves the structural stability of the infrared detector.
  • the materials that can be configured to form the weighted bulk structure of the first reinforcement structure 161 include amorphous silicon, amorphous germanium, amorphous silicon germanium, amorphous carbon, silicon carbide, aluminum oxide, silicon nitride, carbonitride At least one of silicon, silicon oxide, silicon, germanium, silicon germanium, aluminum, copper, tungsten, gold, platinum, nickel, chromium, titanium-tungsten alloy, nickel-chromium alloy, nickel-platinum alloy or nickel-silicon alloy.
  • the first reinforcement structure 161 can be a single-layer structure deposited by dielectric or metal, or a multi-layer structure formed by stacking two, three or more single-layer structures, amorphous silicon, amorphous germanium , amorphous silicon germanium, amorphous carbon, silicon carbide, aluminum oxide, silicon nitride, silicon carbonitride, silicon, germanium, silicon germanium, aluminum, copper, tungsten, gold, platinum, nickel, chromium, titanium-tungsten alloy, Nickel-chromium alloys, nickel-platinum alloys, and nickel-silicon alloys will not be corroded by gaseous hydrogen fluoride, carbon tetrafluoride or trifluoromethane, so that the sacrificial layer can be released by subsequent corrosion of the sacrificial layer by gaseous hydrogen fluoride, carbon tetrafluoride or trifluoromethane In the process, it will not affect the first reinforcement structure 161, so as to ensure that the setting of the first reinforcement
  • the material constituting the reinforcing structure 16 includes silicon oxide, since silicon oxide will be corroded by gaseous hydrogen fluoride, carbon tetrafluoride or trifluoromethane, it is preferable to set the reinforcing structure 16 between the first dielectric layer 13 and the second dielectric layer 15 in a closed space.
  • the second columnar structure 62 includes at least one layer of solid columnar structures, and the solid columnar structure includes a solid structure 605.
  • FIG. 6 and FIG. 8 exemplarily set the solid columnar structure 62.
  • the sidewall of the structure 605 is covered with at least one dielectric layer 606 and the solid structure 605 of the second columnar structure 62 is placed in contact with one layer of dielectric layer 606.
  • Figure 6 and Figure 8 exemplarily set the solid structure of the second columnar structure 62
  • the sidewall of 605 is coated with a layer of dielectric layer 606 and the solid structure 605 of the second columnar structure 62 is placed in contact with the dielectric layer 606.
  • the material constituting the solid structure 605 of the second columnar structure 62 includes at least one of tungsten, copper or aluminum.
  • the material constituting the dielectric layer 606 may include silicon oxide, silicon nitride, silicon carbide, amorphous carbon, aluminum oxide, titanium oxide, vanadium oxide, amorphous silicon, amorphous germanium, amorphous germanium silicon, amorphous germanium At least one of silicon oxide, silicon, germanium, silicon germanium, silicon germanyl oxide, graphene, copper or platinum.
  • the at least one dielectric layer 606 covering the solid structure 605 of the second columnar structure 62 can serve as electrical insulation, and the solid structure 605 of the second columnar structure 62 is protected by the dielectric layer 606 to prevent external materials from corroding the second
  • the dielectric layer 606 can be used as an auxiliary support structure for the second columnar structure 62.
  • the dielectric layer 606 and the second columnar structure supports the absorbing plate 10 together, which is beneficial to improving the mechanical stability of the second columnar structure 62, thereby improving the structural stability of the infrared sensor.
  • the material for the dielectric layer 606 constituting the first columnar structure 62 may include silicon oxide, silicon nitride, silicon carbide, amorphous carbon, aluminum oxide, titanium oxide, vanadium oxide, amorphous silicon, amorphous germanium, amorphous At least one of silicon germanium, amorphous silicon germanium, silicon, germanium, silicon germanium, silicon germanyl, graphene, copper or platinum, none of which will be corroded by gaseous hydrogen fluoride, carbon tetrafluoride or trifluoromethane , so the dielectric layer 606 covering the solid structure 605 of the second columnar structure 62 will not be corroded when the sacrificial layer is etched by gaseous hydrogen fluoride, carbon tetrafluoride and trifluoromethane in subsequent process steps.
  • the dielectric layer 606 covering the solid structure 605 of the second columnar structure 62 can be set as the third dielectric layer 130 in the absorbing plate 10, and the dielectric layer 606 covering the second columnar structure 62
  • the dielectric layer of the solid structure 605 can also be a dielectric layer made separately, or the dielectric layer of the solid structure 605 covering the second columnar structure 62 can also be set as the fourth dielectric layer 150 or the second heat-sensitive medium in the absorption plate 10 Layer 120.
  • the sidewall of the solid structure 605 of the second columnar structure 62 is arranged in contact with the sacrificial layer, which is the corresponding absorbing plate 10, that is, the sacrificial layer between the absorption plate 10 that is directly electrically connected to the second columnar structure 62 and the corresponding beam structure 11, that is, the beam structure 11 that is directly electrically connected to the second columnar structure 62, that is, the sacrificial layer is the corresponding
  • the material of the solid structure 605 that constitutes the second columnar structure 62 can be set to include at least one of tungsten, copper or aluminum, the film layer in the second columnar structure 62 and the material of the second columnar structure 62
  • the specific effect is similar to the effect of the first columnar structure 61 shown in FIG.
  • the material of 605 includes at least one of tungsten, copper or aluminum
  • the material constituting the adhesion layer in the second columnar structure 62 includes at least one of titanium, titanium nitride, tantalum or tantalum nitride, forming the second columnar structure 62
  • the material of the inner dielectric layer includes silicon oxide, silicon nitride, silicon carbide, amorphous carbon, aluminum oxide, titanium oxide, vanadium
  • the infrared detector also includes a second reinforcement structure, and the second reinforcement structure corresponds to the first columnar structure 61.
  • the position of the two columnar structures 62 is set and located on the side of the second columnar structure 62 away from the CMOS measurement circuit system 1, the beam structure 11 is located on the side of the absorbing plate 10 close to the CMOS measurement circuit system 1, and the second reinforcement structure is used to strengthen the second
  • the second reinforcement structure includes a weighted block structure.
  • the weighted block structure of the second reinforcement structure is set in contact with the absorbing plate 10, and the principle of the reinforcement function of the second reinforcement structure is similar to that of the first reinforcement structure 161 of the structure shown in FIG. 25 , and will not be repeated here.
  • the absorption plate 10 is formed with a through hole at the position corresponding to the second columnar structure 62, and at least part of the through hole is exposed.
  • the second columnar structure 62, the weighted block structure constituting the second reinforcing structure includes a first part filling the through hole and a second part located outside the through hole, the orthographic projection of the second part covers the orthographic projection of the first part, and the second reinforcing structure
  • the principle of reinforcement is similar to that of the first reinforcement structure 161 in the structure shown in Fig. 23 and Fig. 24, and will not be repeated here.
  • the material used for the weighted block structure constituting the second reinforcement structure may be the same as that used for the weighted block structure constituting the first reinforcement structure 161 , which will not be repeated here.
  • the first columnar structure 61 includes at least one layer of hollow columnar structure.
  • FIG. 2 and FIG. 8 exemplarily set that the first columnar structure 61 includes a layer of hollow columnar structure, and the hollow columnar structure At least a first electrode layer 14 is arranged inside, and the first electrode layer 14 in the hollow columnar structure is electrically connected with the first electrode layer 14 in the beam structure 11, the second electrode layer 140 in the absorbing plate 10 and the supporting base 42, so as to It is ensured that the electrical signals generated by the absorber plate 10 are transmitted to the CMOS measurement circuitry 1 .
  • the dielectric layer below the first electrode layer 14 in the first columnar structure 61 may be, for example, the first dielectric layer 13 in the beam structure 11
  • the dielectric layer above the first electrode layer 14 may be, for example, the beam structure 11
  • the second dielectric layer 15 and the dielectric layers on both sides of the first electrode layer 14 can also be film layers made separately.
  • the first columnar structure 61 there may be no dielectric layer above and/or below the first electrode layer 14, that is, only the dielectric layer below the first electrode layer 14 or only the first electrode may be provided in the hollow columnar structure. There is a dielectric layer above the layer 14 or only the first electrode layer 14 is arranged in the hollow columnar structure, and the outside of the first electrode layer 14 is not wrapped by a dielectric layer.
  • Fig. 26 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the present invention.
  • Fig. 26 only schematically shows the first columnar structure 61 and part of the beam structure 11, and does not show the structure above the beam structure 11.
  • the infrared detector may also include a first reinforcement structure 162, the first reinforcement The structure 162 is set corresponding to the position of the first columnar structure 61.
  • the first reinforcement structure 162 is used to strengthen the gap between the first columnar structure 61 and the beam structure 11 and between the first columnar structure 61 and the reflection
  • the stability of the connection between the layers 4 is to enhance the stability of the connection between the first columnar structure 61 and the support base 42 .
  • the first reinforcing structure 162 corresponding to the hollow first columnar structure 62 may be located on the side of the first electrode layer 14 away from the CMOS measurement circuit system 1 , and when there is no dielectric layer covering the first electrode layer 14 , the first The reinforcing structure 162 is located above the first electrode layer 14 and is in contact with the first electrode layer 14 .
  • the first reinforcing structure 162 corresponding to the hollow first columnar structure 62 can form a hollow structure or a solid structure in the hollow columnar structure.
  • the first electrode layer 14 is covered with a dielectric layer
  • the first reinforcing structure 162 corresponding to the hollow first columnar structure 62 can be 26 is located above the second dielectric layer 15 and is in contact with the second dielectric layer 15.
  • the first reinforcement structure 162 corresponding to the hollow first columnar structure 62 can form a hollow structure in the hollow columnar structure as shown in FIG.
  • the first reinforcing structure 162 can also form a solid structure in the hollow columnar structure, that is, the first reinforcing structure 162 can also fill up the inner space formed by the second dielectric layer 15 .
  • the first reinforcement structure 162 may be disposed above the first electrode layer 14 and the first reinforcement structure 162 is disposed in contact with the first electrode layer 14, that is, the first reinforcement structure 162 is located on the first electrode layer. 14 and the second medium layer 15, at this time, the first reinforcing structure 162 forms a hollow structure in the hollow columnar structure.
  • Fig. 28 is a schematic cross-sectional structure diagram of another infrared detector pixel provided by an embodiment of the present invention.
  • Fig. 28 also only exemplarily shows the first columnar structure 61 and part of the beam structure 11, and does not show the structure above the beam structure 11.
  • the reinforcing structure 162 is located on the side of the first electrode layer 14 close to the CMOS measurement circuit system 1 , and a dielectric layer is arranged under the first electrode layer 14 , for example, when the first dielectric layer 13 corresponds to the first hollow columnar structure 62 .
  • the reinforcement structure 162 may be located between the first electrode layer 14 and the first dielectric layer 13 and the first reinforcement structure 162 is disposed in contact with the first electrode layer 14 .
  • the first reinforcement structure 162 covers the connection position between the first columnar structure 61 and the beam structure 11, which is equivalent to adding a load-bearing block at the connection position between the first columnar structure 61 and the beam structure 11, and then using the first reinforcement
  • the structure 162 enhances the connection stability between the first columnar structure 61 and the beam structure 11 .
  • first reinforcement structure 162 also covers at least part of the connection position between the first columnar structure 61 and the support base 42, which is equivalent to adding a load-bearing block at the connection position between the first columnar structure 61 and the support base 42, and then using the corresponding hollow
  • the first reinforcing structure 162 of the first columnar structure 62 enhances the stability of the connection between the first columnar structure 6 and the support base 42, thereby optimizing the electrical connection characteristics of the entire infrared detector and optimizing the infrared detection performance of the infrared detector .
  • the materials that constitute the first reinforcing structure 162 corresponding to the hollow first columnar structure 62 include amorphous silicon, amorphous germanium, amorphous silicon germanium, amorphous carbon, silicon carbide, aluminum oxide, silicon nitride , silicon carbonitride, silicon, germanium, silicon germanium, aluminum, copper, tungsten, gold, platinum, nickel, chromium, titanium-tungsten alloy, nickel-chromium alloy, nickel-platinum alloy or nickel-silicon alloy, the above implementation
  • the first reinforcing structure 162 corresponding to the hollow first columnar structure 62 described in the example may be a metal structure or a non-metallic structure, which is not specifically limited in the embodiment of the present invention, and the first reinforcing structure 162 corresponding to the hollow first columnar structure 62 is guaranteed to be It is sufficient that the setting of the reinforcement structure 162 does not affect the electrical connection in the infrared detector.
  • the second columnar structure 62 includes at least one layer of hollow columnar structure.
  • FIG. 2 and FIG. 7 exemplarily set that the second columnar structure 62 includes a layer of hollow columnar structure, and the hollow columnar structure At least an electrode layer is arranged inside.
  • the beam structure 11 shown in FIG. 2 and FIG. 7 is located on the side of the absorber plate 10 close to the CMOS measurement circuit system 1
  • at least a second electrode layer 140 is arranged inside the second columnar structure 62,
  • the beam structure 11 is located on the side of the absorbing plate 10 away from the CMOS measurement circuit system 1 as shown in FIG.
  • At least the first electrode layer 14 is disposed in the second columnar structure 62 .
  • FIG. 7 exemplarily set the second electrode layer 140 and the dielectric layers on both sides of the second electrode layer 140 in the hollow columnar structure constituting the second columnar structure 62.
  • the dielectric layers on both sides realize the The effective protection of the second electrode layer 140 prevents the second electrode layer 140 from being oxidized or corroded, and optimizes the electrical transmission characteristics of the infrared detector.
  • the dielectric layer below the second electrode layer 140 in the second columnar structure 62 can be, for example, the third dielectric layer 130 in the absorber 10, and the dielectric layer above the second electrode layer 14 can be, for example, the absorber 10
  • the dielectric layers on both sides of the second electrode layer 140 may also be separately fabricated film layers.
  • there may be no dielectric layer above and/or below the second electrode layer 140 that is, there may be only a dielectric layer below the second electrode layer 140 or only the second electrode in the hollow columnar structure.
  • There is a dielectric layer above the layer 140 or only the second electrode layer 140 is disposed in the hollow columnar structure, and the second electrode layer 140 is not wrapped by a dielectric layer.
  • the infrared detector also includes a second reinforcement structure, and the second reinforcement structure corresponds to The position of the second columnar structure 62 is set, and when the beam structure 11 is located on the side of the absorbing board 10 close to the CMOS measurement circuit system 1, the second reinforcement structure is used to enhance the connection stability between the second columnar structure 62 and the absorbing board 10, When the beam structure 11 is located on the side of the absorbing board 10 away from the CMOS measurement circuit system 1 similarly to FIG. The stability of the connection between.
  • the second reinforcing structure corresponding to the hollow second columnar structure 62 may be located on the side of the electrode layer away from the CMOS measurement circuit system 1; or, the second reinforcing structure corresponding to the hollow second columnar structure 62 may be located at The electrode layer is adjacent to one side of the CMOS measurement circuitry. Analogous to the setting method of the first reinforcement structure 161 corresponding to the first columnar structure 61 in the structure shown in FIG. The second reinforcement structure of the structure 62 is located on the side of the second electrode layer 140 away from the CMOS measurement circuit system 1.
  • the second reinforcement structure corresponding to the hollow second columnar structure 62 is located at The second reinforcement structure corresponding to the hollow second columnar structure 62 can form a hollow structure or a solid structure in the hollow columnar structure.
  • the second reinforcing structure corresponding to the hollow second columnar structure 62 is located above the fourth dielectric layer 150 and is set in contact with the fourth dielectric layer 150. At this time, the second reinforcing structure corresponding to the hollow second columnar structure 62 can be placed on the hollow columnar structure.
  • the second reinforcement structure corresponding to the hollow second columnar structure 62 is arranged in contact with the second electrode layer 140 , that is, the second reinforcement structure corresponding to the hollow second columnar structure 62 is located between the second electrode layer 140 and the fourth dielectric layer 150 , at this time, the second reinforcing structure corresponding to the hollow second columnar structure 62 forms a hollow structure in the hollow columnar structure.
  • the second reinforcing structure corresponding to the hollow second columnar structure 62 can be located between the second electrode layer 140 and the third The second reinforcement structure between the dielectric layers 130 and corresponding to the hollow second columnar structure 62 is disposed in contact with the second electrode layer 140 .
  • the beam structure 11 is located on the side of the absorbing plate 10 away from the CMOS measurement circuit system 1 as shown in FIG.
  • a reinforcement structure similar to that shown in Figures 26 to 28 is provided.
  • the second reinforcement structure corresponding to the hollow second columnar structure 62 is located on the side of the second electrode layer 140 away from the CMOS measurement circuit system 1, or the second reinforcement structure corresponding to the hollow second columnar structure 62
  • the second reinforcement structure is located on the side of the second electrode layer 140 close to the CMOS measurement circuit system 1, and the second reinforcement structure corresponding to the hollow second columnar structure 62 covers the connection position between the second columnar structure 62 and the absorbing plate 10, which is equivalent to A load-bearing block is added at the connection position between the second columnar structure 62 and the absorbing panel 10, and then the second reinforcing structure corresponding to the hollow second columnar structure 62 is used to enhance the stability of the connection between the second columnar structure 62 and the absorbing panel 10 sex.
  • the materials that constitute the first reinforcing structure 162 corresponding to the hollow first columnar structure 61 include amorphous silicon, amorphous germanium, amorphous silicon germanium, amorphous carbon, silicon carbide, aluminum oxide, silicon nitride , silicon carbonitride, silicon, germanium, silicon germanium, aluminum, copper, tungsten, gold, platinum, nickel, chromium, titanium-tungsten alloy, nickel-chromium alloy, nickel-platinum alloy or nickel-silicon alloy, constituting the corresponding
  • the material of the second reinforcing structure of the hollow second columnar structure 62 includes amorphous silicon, amorphous germanium, amorphous silicon germanium, amorphous carbon, silicon carbide, aluminum oxide, silicon nitride, silicon carbonitride, silicon, germanium , at least one of silicon germanium, aluminum, copper, tungsten, gold, platinum, nickel, chromium, titanium-tungsten alloy, nickel-chromium alloy, nickel-platinum alloy or
  • At least one patterned metal interconnection layer may be disposed between the reflective layer 4 and the suspended micro-bridge structure 40, and the patterned metal interconnection layer is located above the airtight release insulating layer 3 or Underneath and electrically insulated from the reflective layer 4, the patterned metal interconnection layer is used to adjust the resonance mode of the infrared detector.
  • the Bragg reflector (Bragg reflector) is an optical device that uses constructive interference of reflected light from different interfaces to enhance reflection of light of different wavelengths.
  • the embodiment of the present invention sets at least one patterned metal interconnect layer between the reflective layer 4 and the suspended micro-bridge structure 40, at least one patterned metal interconnect layer, the reflective layer 4 and the absorbing plate 10 forms a structure similar to a Bragg reflector, and the setting of at least one patterned metal interconnection layer is equivalent to changing the thickness of the overall resonant cavity medium composed of the reflective layer 4 and the heat-sensitive medium layer in the absorbing plate 10, so that the infrared detector looks like
  • the element can form multiple resonant cavities with different medium thicknesses, and the infrared detector pixel can select different wavelengths of light for enhanced reflection adjustment, and then use at least one patterned metal interconnection layer to adjust the resonant mode of the infrared detector.
  • Improve the infrared absorption rate of the infrared detector broaden the infrared absorption spectrum of the infrared detector, and increase the infrared absorption spectrum of the
  • At least one patterned metal interconnection layer can be set on the side of the airtight release isolation layer 3 away from the CMOS measurement circuit system 1 and/or at least one patterned metal interconnection layer is located on the airtight release isolation layer 3 adjacent to the CMOS One side of the measurement circuit system.
  • the patterned metal interconnection layer can be set to include a plurality of metal repeating units arranged in an array, and each metal repeating unit can include two diagonally arranged L-shaped patterned structures, a circular structure, a fan-shaped structure, an ellipse At least one of a circular structure, a ring structure, a split ring structure or a polygonal structure, and the patterned metal interconnection layer can also be set to include a plurality of patterned hollow structures arranged in an array, and the patterned hollow structure can include a circular hollow structure At least one of an open annular hollow structure or a polygonal hollow structure.
  • the embodiment of the present invention does not limit the specific pattern contained in the patterned metal interconnection layer.
  • FIG. 29 is a schematic perspective view of another infrared detector pixel provided by an embodiment of the present invention
  • FIG. 30 is a schematic top view of the structure shown in FIG. 29 .
  • Fig. 29 only shows the first columnar structure 61 and the beam structure 11, and does not show the structure above the beam structure 11.
  • the two parallel beam structures that meet at the same node are respectively the first half-bridge structure 710 and the second half-bridge structure 720, and the first half-bridge structure
  • the structure 710 and the second half-bridge structure 720 form a thermally symmetrical structure 70 .
  • the heat of the infrared detector is conducted from the absorbing plate 10 or the middle part 730 of the beam structure 11 to the two first column structures 61 connecting the same beam structure 11, and the first half-bridge structure 710 may include a support layer, an electrode layer and a passivation layer. layer, for example including the first dielectric layer 13, the first electrode layer 14 and the second dielectric layer 15, the second half-bridge structure 720 may include the first dielectric layer 13 and/or the second dielectric layer 15, that is, the first half-bridge structure The thickness of 710 is greater than the thickness of the second half-bridge structure 720.
  • the first half-bridge structure 710 and the second half-bridge structure 720 are equal in length, the first half-bridge structure 710 is thicker than the second half-bridge structure 710 due to its greater thickness.
  • the half-bridge structure 720 has a faster heat conduction speed.
  • the lengths of the first half-bridge structure 710 and the second half-bridge structure 720 are asymmetrically designed, that is, the length of the first half-bridge structure 710 is set to be greater than the length of the second half-bridge structure 720, which reduces the thickness factor.
  • the heat conduction speed on the first half-bridge structure 710 with a faster heat conduction speed realizes that the thermal conductivity imbalance difference between the first half-bridge structure 710 and the second half-bridge structure 720 in the thermally symmetrical structure 70 is less than or equal to 20%, that is, the difference in heat conduction velocity between the first half-bridge structure 710 and the second half-bridge structure 720 in the thermally symmetrical structure 70 is less than or equal to 20%.
  • the first half-bridge structure in the thermally symmetrical structure 70 can be realized
  • the thermal conductance of 710 and the second half-bridge structure 720 is the same, which further reduces the total thermal conductance of the infrared detector, thereby improving the infrared detection performance of the infrared detector and reducing the impact of the infrared detector under the same force. Stress and deformation improve the stability and impact resistance of the infrared detector, and enhance the mechanical strength of the infrared detector.
  • parallel beam structure a and parallel beam structure b intersect at the same node A
  • parallel beam structure c and parallel beam structure d intersect at node B and node C
  • parallel beam structure e and parallel beam structure f meet at the same node D.
  • the length of the first half-bridge structure 710 in the thermally symmetrical structure 70 is greater than the length of the second half-bridge structure 720, therefore, the parallel beam structure a is the first half-bridge structure 710, and the parallel beam structure b is the second half-bridge structure 720, the two form a thermally symmetrical structure 70, the parallel beam structure c is the first half-bridge structure 710, the parallel beam structure d is the second half-bridge structure 720, the two form a thermally symmetrical structure 70, and the parallel beam structure e is the first half-bridge structure 710
  • the half-bridge structure 710 and the parallel beam structure f are the second half-bridge structure 720 , which form a thermally symmetrical structure 70 .
  • the suspended micro-bridge structure 40 when the suspended micro-bridge structure 40 includes the first dielectric layer 13 and the second dielectric layer 15, the oppositely arranged
  • the first dielectric layer 13 and/or the second dielectric layer 15 between the beam structures 11 form a patterned film layer structure
  • the beam structures 11 oppositely arranged here are the beam structures 11 located on the left and right sides in FIG. 1 or located in FIG. 1
  • the patterned film layer structure includes a plurality of striped patterns, and the striped patterns in the patterned film layer structure are arranged symmetrically with respect to the beam structure 11 .
  • FIG. 31 is a schematic top view structure diagram of a first dielectric layer provided by an embodiment of the present invention. 1 to 31, the first dielectric layer 13 between the opposite beam structures 11 can be arranged to form a patterned film structure 90 as shown in FIG. 31, and the patterned film structure 90 is located at A1 in FIG. 2 area, the patterned film structure 90 includes a plurality of strip patterns 91, and the strip patterns 91 in the patterned film structure 90 are arranged symmetrically with respect to the beam structure 11, that is, the strip patterns 91 in the patterned film structure 90 are opposite to each other.
  • the beam structures 11 on the left and right sides in FIG. 31 are arranged symmetrically.
  • the patterned film layer structure 90 is formed by arranging the first dielectric layer 13 and/or the second dielectric layer 15 between the beam structures 11 opposite to each other.
  • the patterned film layer structure 90 includes a plurality of striped patterns 91, the pattern The stripe pattern 91 in the patterned film structure 90 is arranged symmetrically with respect to the beam structure 11 , which effectively improves the mechanical stability of the patterned film structure 90 , which in turn helps to improve the mechanical stability of the entire infrared detector.
  • the pattern in the patterned film structure 90 described in the embodiment of the present invention is not limited to the pattern form shown in FIG. structure, etc., the embodiment of the present invention does not limit the specific patterns in the patterned film structure 90, it is enough to ensure that the striped pattern in the patterned film structure 90 is symmetrical with respect to the beam structure 11, and the first dielectric layer 13
  • the patterns in the patterned film layer structure 90 formed with the second dielectric layer 15 may be the same or different.
  • the infrared detector can be set to be based on 3nm, 7nm, 10nm, 14nm, 22nm, 28nm, 32nm, 45nm, 65nm, 90nm, 130nm, 150nm, 180nm, 250nm or 350nm CMOS process, the aforementioned dimensions characterize the size of the integrated circuit Process node, that is, the feature size that characterizes the process of integrated circuit processing.
  • the metal wiring material constituting the metal interconnection layer in the infrared detector includes at least one of aluminum, copper, tungsten, titanium, nickel, chromium, platinum, silver, ruthenium or cobalt, for example, it can be set
  • the material constituting the reflective layer 4 includes at least one of aluminum, copper, tungsten, titanium, nickel, chromium, platinum, silver, ruthenium or cobalt.
  • the CMOS measurement circuit system 1 and the CMOS infrared sensing structure 2 are both prepared using CMOS technology, and the CMOS infrared sensing structure 2 is directly prepared on the CMOS measurement circuit system 1, so that the first columnar structure 61 and the second columnar structure 62 can be realized.
  • the radial side length of the beam structure 11 is greater than or equal to 0.5um and less than or equal to 3um, the width of the beam structure 11, that is, the width of a single line in the beam structure 11 is less than or equal to 0.3um, and the height of the resonant cavity is less than or equal to 2.5um.
  • the embodiments of the present invention do not provide schematic diagrams of all structural infrared detectors belonging to the protection scope of the embodiments of the present invention, and are not intended to limit the protection scope of the embodiments of the present invention.
  • the differences between the different features disclosed in the embodiments of the present invention Any combination is possible, for example, no matter whether there is a first reinforcement structure and/or a second reinforcement structure in the infrared detector, it all belongs to the protection scope of the embodiment of the present invention, and any combination of the first columnar structure and the second columnar structure of different structures is also It belongs to the protection scope of the embodiments of the present invention.
  • the invention is suitable for infrared detectors, and realizes the integrated preparation of a CMOS measurement circuit system and a CMOS infrared sensing structure on a CMOS production line by using a CMOS process. There is no problem of process compatibility, and the technical difficulties faced by the MEMS process are solved.
  • the preparation process is simple and It is easy to control and can realize the multi-layer process design of the sacrificial layer, which is conducive to improving the flatness of the film layer, and can achieve the goal of high yield, low cost, high production capacity and large-scale integrated production of the chip, making the detection sensitivity of the infrared detector Higher, longer detection distance and better detection performance, which is more conducive to the realization of chip miniaturization, better product consistency, and has strong industrial applicability.

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Abstract

一种基于CMOS工艺的多层结构的红外探测器，红外探测器中的CMOS测量电路***（1）和CMOS红外传感结构（2）均使用CMOS工艺制备，CMOS制作工艺包括金属互连工艺、通孔工艺、IMD工艺以及RDL工艺，多层结构的红外探测器中，第一柱状结构（61）包括至少一层实心柱状结构和/或至少一层空心柱状结构，第二柱状结构（62）包括至少一层实心柱状结构和/或至少一层空心柱状结构，吸收板（10）上形成有至少一个孔状结构，孔状结构至少贯穿吸收板（10）中的介质层；和/或，梁结构（11）上形成有至少一个孔状结构。解决了传统MEMS工艺红外探测器的性能低，像素规模低，良率低以及一致性差的问题，优化了吸收板（10）的平坦化程度，减小了梁结构（11）的热导，优化了红外探测器的性能。

Description

一种基于CMOS工艺的多层结构的红外探测器
本发明要求于2021年6月25日提交中国专利局、申请号为202110711253.X、发明名称为“一种基于CMOS工艺的多层结构的红外探测器”的中国专利申请的优先权，其全部内容通过引用结合在本发明中。
技术领域
本发明涉及红外探测技术领域，尤其涉及一种基于CMOS工艺的多层结构的红外探测器。
背景技术
监控市场、车辅市场、家居市场、智能制造市场以及手机应用等领域都对非制冷高性能的芯片有着强烈的需求，且对芯片性能的好坏、性能的一致性以及产品的价格都有一定的要求，每年预计有亿颗以上芯片的潜在需求，而目前的工艺方案和架构无法满足市场需求。
目前红外探测器采用的是测量电路和红外传感结构结合的方式，测量电路采用CMOS(Complementary Metal-Oxide-Semiconductor，互补金属氧化物半导体)工艺制备，而红外传感结构采用MEMS(Micro-Electro-Mechanical System，微电子机械***)工艺制备，导致存在如下问题：
(1)红外传感结构采用MEMS工艺制备，以聚酰亚胺作为牺牲层，与CMOS工艺不兼容。
(2)聚酰亚胺作为牺牲层，存在释放不干净影响探测器芯片真空度的问题，还会使后续薄膜生长温度受限制，不利于材料的选择。
(3)聚酰亚胺会造成谐振腔高度不一致，工作主波长难以保证。
(4)MEMS工艺制程的控制远差于CMOS工艺，芯片的性能一致性和探测性能都会受到制约。
(5)MEMS产能低，良率低，成本高，不能实现大规模批量生产。
(6)MEMS现有的工艺能力不足以支撑更高性能的探测器制备，更小的线宽以及更薄的膜厚，不利于实现芯片的小型化。
发明内容
(一)要解决的技术问题
本发明要解决的技术问题是如何克服测量电路采用CMOS工艺制备，红外传感结构采用MEMS工艺制备导致的工艺不兼容以及影响红外探测器性能的问题。
(二)技术方案
为了解决上述技术问题，本发明提供了一种基于CMOS工艺的多层结构的红外探测器，包括：
CMOS测量电路***和CMOS红外传感结构，所述CMOS测量电路***和所述CMOS红外传感结构均使用CMOS工艺制备，在所述CMOS测量电路***上直接制备所述CMOS红外传感结构；
所述CMOS测量电路***上方包括至少一层密闭释放隔绝层，所述密闭释放隔绝层用于在制作所述CMOS红外传感结构的释放刻蚀过程中，保护所述CMOS测量电路***不受工艺影响；
所述CMOS红外传感结构的CMOS制作工艺包括金属互连工艺、通孔工艺、IMD工艺以及RDL工艺，所述CMOS红外传感结构包括至少三层金属互连层、至少三层介质层和多个互连通孔，所述金属互连层至少包括反射层和两层电极层，所述介质层至少包括两层牺牲层和热敏感介质层；其中，所述热敏感介质层用于将其吸收的红外辐射对应的温度变化转化为电阻变化，进而通过所述CMOS测量电路***将红外目标信号转化成可实现电读出的信号；
所述CMOS红外传感结构包括由所述反射层和所述热敏感介质层构成的谐振腔以及控制热传递的悬空微桥结 构，所述悬空微桥结构包括至少一层梁结构和至少一层吸收板，所述梁结构位于所述吸收板临近或者远离所述CMOS测量电路***的一侧，所述反射层和所述梁结构之间设置有第一柱状结构且所述第一柱状结构直接电连接所述反射层中的支撑底座和对应的所述梁结构，所述梁结构通过所述第一柱状结构和所述支撑底座与所述CMOS测量电路***电连接，所述吸收板与所述梁结构之间设置有第二柱状结构且所述第二柱状结构直接电连接对应的所述吸收板和对应的所述梁结构，所述吸收板用于将红外信号转换为电信号并通过所述第二柱状结构和对应的所述梁结构与对应的所述第一柱状结构电连接；
所述第一柱状结构包括至少一层实心柱状结构和/或至少一层空心柱状结构，所述第二柱状结构包括至少一层实心柱状结构和/或至少一层空心柱状结构；
所述吸收板上形成有至少一个孔状结构，所述孔状结构至少贯穿所述吸收板中的介质层；和/或，所述梁结构上形成有至少一个孔状结构；
所述CMOS测量电路***用于测量和处理一个或多个所述CMOS红外传感结构形成的阵列电阻值，并将红外信号转化为图像电信号；所述CMOS测量电路***包括偏压产生电路、列级模拟前端电路和行级电路，所述偏压产生电路的输入端连接所述行级电路的输出端，所述列级模拟前端电路的输入端连接所述偏压产生电路的输出端，所述行级电路中包括行级镜像像元和行选开关，所述列级模拟前端电路中包括盲像元；其中，所述行级电路分布在每个像素内并根据时序产生电路的行选通信号选取待处理信号，并在所述偏压产生电路的作用下输出电流信号至所述列级模拟前端电路以进行电流电压转换输出；
所述行级电路受所述行选开关控制而被选通时向所述偏压产生电路输出第三偏置电压，所述偏压产生电路根据输入的恒压及所述第三偏置电压输出第一偏置电压和第二偏置电压，所述列级模拟前端电路根据所述第一偏置电压和所述第二偏置电压得到两路电流，并对所产生的两路电流之差进行跨阻放大并作为输出电压输出。
可选地，在所述CMOS测量电路***的金属互连层上层或者同层制备所述CMOS红外传感结构。
可选地，所述牺牲层用于使所述CMOS红外传感结构形成镂空结构，构成所述牺牲层的材料是氧化硅，采用post-CMOS工艺腐蚀所述牺牲层。
可选地，所述反射层用于反射红外信号并与所述热敏感介质层形成所述谐振腔，所述反射层包括至少一层金属互连层，所述第一柱状结构采用所述金属互连工艺和所述通孔工艺连接对应的所述梁结构和所述CMOS测量电路***，所述第二柱状结构采用所述金属互连工艺和所述通孔工艺连接对应的所述吸收板与对应的所述梁结构；
所述梁结构包括第一电极层，或者所述梁结构包括第一介质层和第一电极层，或者所述梁结构包括第一电极层和第二介质层，或者所述梁结构包括第一电极层和第一热敏感介质层，或者所述梁结构包括第一介质层、第一电极层和第二介质层，或者所述梁结构包括第一介质层、第一电极层和第一热敏感介质层，或者所述梁结构包括第一电极层、第一热敏感介质层和第二介质层，或者所述梁结构包括第一介质层、第一电极层、第一热敏感介质层和第二介质层，所述吸收板包括第二电极层和第二热敏感介质层，或者所述吸收板包括第三介质层、第二电极层和第二热敏感介质层，或者所述吸收板包括第二电极层、第二热敏感介质层和第四介质层，或者所述吸收板包括第三介质层、第二电极层、第二热敏感介质层和第四介质层；其中，构成所述第一介质层的材料包括非晶硅、非晶锗、非晶锗硅、氧化铝或非晶碳中的至少一种，构成所述第二介质层的材料包括非晶硅、非晶锗、非晶锗硅、氧化铝或非晶碳中的至少一种，构成所述第三介质层的材料包括非晶硅、非晶锗、非晶锗硅、氧化铝或非晶碳中的至少一种，构成所述第四介质层的材料包括非晶硅、非晶锗、非晶锗硅、氧化铝或非晶碳中的至少一种，构成所述第一热敏感介质层的材料包括由氧化钛、氧化钒、非晶硅、非晶锗、非晶锗硅、非晶锗氧硅、硅、锗、锗硅、锗氧硅、石墨烯、钛酸锶钡薄膜、铜或铂制备的电阻温度系数大于设定值的材料中的至少一种，构成所述第二热敏感介质层的材料包括由氧化钛、氧化钒、非晶硅、非晶锗、非晶锗硅、非晶锗氧硅、硅、锗、锗硅、锗氧硅、石墨烯、钛酸锶钡薄膜、铜或铂制备的电阻温度系数大于设定值的材料中的至少一种；或者，
所述梁结构包括第一介质层、第一电极层和第二介质层，所述吸收板包括第三介质层和第二电极层，或者所述吸收板包括第二电极层和第四介质层，或者所述吸收板包括第三介质层、第二电极层和第四介质层，或者所述吸收板包括支撑层、第三介质层、第二电极层和第四介质层，或者所述吸收板包括第三介质层、第二电极层、第四介质层和钝化层，或者所述吸收板包括支撑层、第三介质层、第二电极层、第四介质层和钝化层；其中，构成所述第一介质层的材料包括由非晶硅、非晶锗、非晶锗硅或非晶碳制备的电阻温度系数大于设定值的材料中的至少一种，构成所述第二介质层的材料包括由非晶硅、非晶锗、非晶锗硅或非晶碳制备的电阻温度系数大于设定值的材料中的至 少一种，构成所述第三介质层的材料包括由非晶硅、非晶锗、非晶锗硅或非晶碳制备的电阻温度系数大于设定值的材料中的至少一种，构成所述第四介质层的材料包括由非晶硅、非晶锗、非晶锗硅或非晶碳制备的电阻温度系数大于设定值的材料中的至少一种；
构成所述第一电极层的材料包括钛、氮化钛、钽、氮化钽、钛钨合金、镍铬合金、镍铂合金、镍硅合金、镍、铬、铂、钨、铝或铜中的至少一种，构成所述第二电极层的材料包括钛、氮化钛、钽、氮化钽、钛钨合金、镍铬合金、镍铂合金、镍硅合金、镍、铬、铂、钨、铝或铜中的至少一种。
可选地，所述反射层和所述悬空微桥结构之间设置有至少一层图案化金属互连层，所述图案化金属互连层位于所述密闭释放隔绝层的上方或者下方并与所述反射层之间电绝缘，所述图案化金属互连层用于调节所述红外探测器的谐振模式；
所述悬空微桥结构包括第三介质层和第四介质层，所述红外探测器还包括超材料结构和/或偏振结构，所述超材料结构或者所述偏振结构为所述第三介质层临近所述CMOS测量电路***一侧的至少一层金属互连层，或者所述第四介质层远离所述CMOS测量电路***一侧的至少一层金属互连层，或者所述第三介质层和所述第四介质层中间的且与所述第二电极层电绝缘的至少一层金属互连层，或者，所述第二电极层作为超材料结构层或者偏振结构层。
可选地，所述第一柱状结构包括至少一层空心柱状结构，所述空心柱状结构内至少设置有所述第一电极层；
所述红外探测器还包括第一加固结构，所述第一加固结构对应所述第一柱状结构所在位置设置，所述第一加固结构用于增强所述第一柱状结构与所述梁结构之间以及所述第一柱状结构与所述反射层之间的连接稳固性；
所述第一加固结构位于所述第一电极层远离所述CMOS测量电路***的一侧；或者，所述第一加固结构位于所述第一电极层临近所述CMOS测量电路***的一侧。
可选地，所述第二柱状结构包括至少一层空心柱状结构，所述空心柱状结构内至少设置有电极层；
所述红外探测器还包括第二加固结构，所述第二加固结构对应所述第二柱状结构所在位置设置，所述第二加固结构用于增强所述第二柱状结构与所述吸收板之间的连接稳固性；
所述第二加固结构位于电极层远离所述CMOS测量电路***的一侧；或者，所述第二加固结构位于电极层临近所述CMOS测量电路***的一侧。
可选地，所述第一柱状结构包括至少一层实心柱状结构，所述实心柱状结构包括实心结构；
所述实心结构的侧壁与对应的所述梁结构和所述CMOS测量电路***之间的牺牲层接触设置，构成所述实心结构的材料包括钨、铜或铝中的至少一种；或者，
所述实心结构的侧壁包覆有至少一层介质层且所述实心结构与一层所述介质层接触设置，构成所述实心结构的材料包括钨、铜或铝中的至少一种，构成所述介质层的材料包括氧化硅、氮化硅、碳化硅、非晶碳、氧化铝、氧化钛、氧化钒、非晶硅、非晶锗、非晶锗硅、非晶锗氧硅、硅、锗、锗硅、锗氧硅、石墨烯、铜或铂中的至少一种；或者，
所述实心结构的侧壁以及所述实心结构临近所述CMOS测量电路***的表面包覆有至少一层粘附层，所述第一柱状结构内最***的所述粘附层远离所述实心结构的侧壁包覆有介质层，构成所述实心结构的材料包括钨、铜或铝中的至少一种，构成所述粘附层的材料包括钛、氮化钛、钽或氮化钽中的至少一种，构成所述介质层的材料包括氧化硅、氮化硅、碳化硅、非晶碳、氧化铝、氧化钛、氧化钒、非晶硅、非晶锗、非晶锗硅、非晶锗氧硅、硅、锗、锗硅、锗氧硅、石墨烯、铜或铂中的至少一种；
所述红外探测器还包括第一加固结构，所述第一加固结构对应所述第一柱状结构所在位置设置且位于所述第一柱状结构远离所述CMOS测量电路***的一侧，所述第一加固结构用于增强所述第一柱状结构与所述梁结构之间的连接稳固性，所述第一加固结构包括加重块状结构；
所述加重块状结构位于所述梁结构远离所述CMOS测量电路***的一侧且所述加重块状结构与所述梁结构接触设置；或者，所述梁结构对应所述第一柱状结构所在位置形成有通孔，所述通孔露出至少部分所述第一柱状结构，所述加重块状结构包括填充所述通孔的第一部分和位于所述通孔外的第二部分，所述第二部分的正投影覆盖所述第一部分的正投影。
可选地，所述第二柱状结构包括至少一层实心柱状结构，所述实心柱状结构包括实心结构；
所述实心结构的侧壁与对应的所述梁结构和对应的所述吸收板之间的牺牲层接触设置，构成所述实心结构的材料包括钨、铜或铝中的至少一种；或者，
所述实心结构的侧壁包覆有至少一层介质层且所述实心结构与一层所述介质层接触设置，构成所述实心结构的材料包括钨、铜或铝中的至少一种，构成所述介质层的材料包括氧化硅、氮化硅、碳化硅、非晶碳、氧化铝、氧化钛、氧化钒、非晶硅、非晶锗、非晶锗硅、非晶锗氧硅、硅、锗、锗硅、锗氧硅、石墨烯、铜或铂中的至少一种；或者，
所述实心结构的侧壁以及所述实心结构临近所述CMOS测量电路***的表面包覆有至少一层粘附层，所述第二柱状结构内最***的所述粘附层远离所述实心结构的侧壁包覆有介质层，构成所述实心结构的材料包括钨、铜或铝中的至少一种，构成所述粘附层的材料包括钛、氮化钛、钽或氮化钽中的至少一种，构成所述介质层的材料包括氧化硅、氮化硅、碳化硅、非晶碳、氧化铝、氧化钛、氧化钒、非晶硅、非晶锗、非晶锗硅、非晶锗氧硅、硅、锗、锗硅、锗氧硅、石墨烯、铜或铂中的至少一种；
所述红外探测器还包括第二加固结构，所述第二加固结构对应所述第二柱状结构所在位置设置且位于所述第二柱状结构远离所述CMOS测量电路***的一侧，所述梁结构位于所述吸收板临近所述CMOS测量电路***的一侧，所述第二加固结构用于增强所述第二柱状结构与所述吸收板之间的连接稳固性，所述第二加固结构包括加重块状结构；
所述加重块状结构位于所述吸收板远离所述CMOS测量电路***的一侧且所述加重块状结构与所述吸收板接触设置；或者，所述吸收板对应所述第二柱状结构所在位置形成有通孔，所述通孔露出至少部分所述第二柱状结构，所述加重块状结构包括填充所述通孔的第一部分和位于所述通孔外的第二部分，所述第二部分的正投影覆盖所述第一部分的正投影。
可选地，所述梁结构包括热对称结构；
所述悬空微桥结构包括第一介质层和第二介质层，相对设置的所述梁结构之间的所述第一介质层或和/或所述第二介质层形成图案化膜层结构，所述图案化膜层结构包括多个条状图案，所述条状图案相对于所述梁结构对称设置。
可选地，所述密闭释放隔绝层位于所述CMOS测量电路***和所述CMOS红外传感结构之间的界面和/或位于所述CMOS红外传感结构中；
所述密闭释放隔绝层至少包含一层介质层，构成所述密闭释放隔绝层的介质材料包括碳化硅、碳氮化硅、氮化硅、非晶硅、非晶锗、非晶锗硅、硅、锗、锗硅、非晶碳或氧化铝中的至少一种。
可选地，所述红外探测器是基于3nm、7nm、10nm、14nm、22nm、28nm、32nm、45nm、65nm、90nm、130nm、150nm、180nm、250nm或350nm CMOS工艺制程；
构成所述金属互连层的金属连线材料包括铝、铜、钨、钛、镍、铬、铂、银、钌或钴中的至少一种。
(三)有益效果
本发明实施例提供的上述技术方案与现有技术相比具有如下优点：
本发明实施例利用CMOS工艺实现了CMOS测量电路***和CMOS红外传感结构在CMOS生产线上一体化制备，相较于MEMS工艺，CMOS不存在工艺兼容问题，解决了MEMS工艺面临的技术难点，采用CMOS工艺产线工艺制备红外探测器也可以减小运输成本，减少运输等问题造成的风险；红外探测器以氧化硅作为牺牲层，氧化硅与CMOS工艺完全兼容，制备工艺简单且易于控制，CMOS工艺也不会出现牺牲层聚酰亚胺释放不干净影响探测器芯片真空度的问题，且后续薄膜生长温度不受牺牲层材料的限制，可以实现牺牲层多层工艺设计，不受工艺限制，可以很容易地利用牺牲层实现平坦化，降低工艺难度和可能存在的风险；一体化CMOS工艺制备的红外探测器可实现芯片高良品率、低成本、高产能且大规模集成化生产的目标，为红外探测器提供更广阔的应用市场；基于CMOS工艺的红外探测器可以使红外探测器实现特征结构更小的尺寸和更薄的膜厚，使得红外探测器占空比更大、热导更低、热容更小，从而使得红外探测器的探测灵敏度更高、探测距离更远以及探测性能更好；基于CMOS工艺的红外探测器，可以使探测器像元尺寸更小，实现相同阵列像素下更小的芯片面积，更利于实现芯片小型化；基于CMOS工艺的红外探测器，工艺产线成熟，工艺控制精度更高，可以更好地达到设计要求，产品的一致性更好，更利于电路片调整性能，更利于产业化批量生产。另外，吸收板上的孔状结构有利于加快牺牲层的释放速率以及释放吸收板的内应力，优化了吸收板的平坦化程度，梁结构上的孔状结构有利于进一步减小梁结构的热导，提高了红外探测器的红外探测灵敏度。
应当理解的是，以上的一般描述和后文的细节描述仅是示例性和解释性的，并不能限制本发明。
附图说明
此处的附图被并入说明书中并构成本说明书的一部分，示出了符合本发明的实施例，并与说明书一起用于解释本发明的原理。
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，对于本领域普通技术人员而言，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例提供的一种红外探测器像元的立体结构示意图；
图2为本发明实施例提供的一种红外探测器像元的剖面结构示意图；
图3为本发明实施例提供的另一种红外探测器像元的剖面结构示意图；
图4为本发明实施例提供的另一种红外探测器像元的剖面结构示意图；
图5为本发明实施例提供的另一种红外探测器像元的剖面结构示意图；
图6为本发明实施例提供的另一种红外探测器像元的剖面结构示意图；
图7为本发明实施例提供的另一种红外探测器像元的剖面结构示意图；
图8为本发明实施例提供的另一种红外探测器像元的剖面结构示意图；
图9为本发明实施例提供的另一种红外探测器像元的剖面结构示意图；
图10为本发明实施例提供的另一种红外探测器像元的剖面结构示意图；
图11为本发明实施例提供的另一种红外探测器像元的剖面结构示意图；
图12为本发明实施例提供的另一种红外探测器像元的剖面结构示意图；
图13为本发明实施例提供的另一种红外探测器像元的剖面结构示意图；
图14为本发明实施例提供的一种CMOS测量电路***的结构示意图；
图15为本发明实施例提供的另一种红外探测器像元的剖面结构示意图；
图16为本发明实施例提供的另一种红外探测器像元的立体结构示意图；
图17为本发明实施例提供的另一种红外探测器像元的立体结构示意图；
图18为本发明实施例提供的另一种红外探测器像元的立体结构示意图；
图19为本发明实施例提供的另一种红外探测器像元的立体结构示意图；
图20为本发明实施例提供的一种偏振结构的俯视结构示意图；
图21为本发明实施例提供的另一种偏振结构的俯视结构示意图；
图22为本发明实施例提供的另一种偏振结构的俯视结构示意图；
图23为本发明实施例提供的另一种红外探测器像元的剖面结构示意图；
图24为本发明实施例提供的另一种红外探测器像元的剖面结构示意图；
图25为本发明实施例提供的另一种红外探测器像元的剖面结构示意图；
图26为本发明实施例提供的另一种红外探测器像元的剖面结构示意图；
图27为本发明实施例提供的另一种红外探测器像元的剖面结构示意图；
图28为本发明实施例提供的另一种红外探测器像元的剖面结构示意图；
图29为本发明实施例提供的另一种红外探测器像元的立体结构示意图；
图30为图29所示结构的俯视结构示意图；
图31为本发明实施例提供的一种第一介质层的俯视结构示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
图1为本发明实施例提供的一种红外探测器像元的立体结构示意图，图2为本发明实施例提供的一种红外探测器像元的剖面结构示意图。结合图1和图2，红外探测器包括多个阵列排布的红外探测器像元，基于CMOS工艺的 红外探测器包括CMOS测量电路***1和CMOS红外传感结构2，CMOS测量电路***1和CMOS红外传感结构2均使用CMOS工艺制备，在CMOS测量电路***1上直接制备CMOS红外传感结构2。
具体地，CMOS红外传感结构2用于将外部红外信号转换为电信号并传输至CMOS测量电路***1，CMOS测量电路***1根据接收到的电信号反映出对应红外信号的温度信息，实现红外探测器的温度检测功能。设置CMOS测量电路***1和CMOS红外传感结构2均使用CMOS工艺制备，在CMOS测量电路***1上直接制备CMOS红外传感结构2，即先采用CMOS工艺制备CMOS测量电路***1，再利用CMOS生产线以及该生产线兼容的各项工艺的参数，利用CMOS工艺连续制备CMOS红外传感结构2。
由此，本发明实施例利用CMOS工艺实现了CMOS测量电路***1和CMOS红外传感结构2在CMOS生产线上一体化制备，相较于MEMS工艺，CMOS不存在工艺兼容问题，解决了MEMS工艺面临的技术难点，采用CMOS产线工艺制备红外探测器也可以减小运输成本，减少运输等问题造成的风险；红外探测器以氧化硅作为牺牲层，氧化硅与CMOS工艺完全兼容，制备工艺简单且易于控制，CMOS工艺也不会出现牺牲层聚酰亚胺释放不干净影响探测器芯片真空度的问题，且后续薄膜生长温度不受牺牲层材料的限制，可以实现牺牲层多层工艺设计，不受工艺限制，可以很容易地利用牺牲层实现平坦化，降低工艺难度和可能存在的风险；一体化CMOS工艺制备的红外探测器可实现芯片高良品率、低成本、高产能且大规模集成化生产的目标，为红外探测器提供更广阔的应用市场；基于CMOS工艺的红外探测器可以使红外探测器实现特征结构更小的尺寸和更薄的膜厚，使得红外探测器占空比更大、热导更低、热容更小，从而使得红外探测器的探测灵敏度更高、探测距离更远以及探测性能更好；基于CMOS工艺的红外探测器，可以使探测器像元尺寸更小，实现相同阵列像素下更小的芯片面积，更利于实现芯片小型化；基于CMOS工艺的红外探测器，工艺产线成熟，工艺控制精度更高，可以更好地达到设计要求，产品的一致性更好，更利于电路片调整性能，更利于产业化批量生产。
结合图1和图2，CMOS红外传感结构2包括由反射层4和热敏感介质层构成的谐振腔以及控制热传递的悬空微桥结构40。具体地，CMOS红外传感结构2包括位于CMOS测量电路***1上的反射层4以及控制热传递的悬空微桥结构40，悬空微桥结构40包括吸收板10，吸收板10包括热敏感介质层，反射层4与热敏感介质层之间构成谐振腔。悬空微桥结构40包括至少一层梁结构11和至少一层吸收板10，梁结构11位于吸收板10临近或者远离CMOS测量电路***1的一侧，图1示例性地设置悬空微桥结构40包括一层梁结构11和一层吸收板10，且梁结构11位于吸收板10临近CMOS测量电路***1的一侧。
反射层4和梁结构11之间设置有第一柱状结构61且第一柱状结构61直接电连接反射层4中的支撑底座42和对应的梁结构11，梁结构11通过第一柱状结构61和支撑底座42与CMOS测量电路***1电连接，第一柱状结构61用于在反射层4和对应的梁结构11之间的牺牲层释放后支撑对应的梁结构11。吸收板10与梁结构11之间设置有第二柱状结构62且第二柱状结构62直接电连接对应的吸收板10和对应的梁结构11，吸收板10用于将红外信号转换为电信号并通过第二柱状结构62和对应的梁结构11与对应的第一柱状结构61电连接，即吸收板10经由红外信号转换来的电信号依次通过第二柱状结构62、梁结构11、第一柱状结构61和支撑底座42传输至CMOS测量电路***1，CMOS测量电路***1处理接收到的电信号以反映出温度信息，实现红外探测器非接触式的红外温度检测，第二柱状结构62用于在对应的吸收板10与对应的梁结构11之间的牺牲层释放掉后支撑对应的梁结构11或吸收板10。
需要说明的是，上述实施例所述的第一柱状结构61直接电连接反射层4中的支撑底座42和梁结构11，是指第一柱状结构61仅具有两个电连接端，第一柱状结构61的一个电连接端直接电连接支撑底座42，第一柱状结构61的另一个电连接端直接电连接距离第一柱状结构61的该电连接端最近的梁结构11。上述实施例所述的第二柱状结构62直接电连接吸收板10和梁结构11，是指第二柱状结构62仅具有两个电连接端，第二柱状结构62的一个电连接端直接电连接距离第二柱状结构62该电连接端最近的吸收板10，第二柱状结构62的另一个电连接端直接电连接距离第二柱状结构62的该电连接端最近的梁结构11。
CMOS红外传感结构2通过不同的电极结构输出正电信号和接地电信号，正电信号和接地电信号通过不同组柱状结构传输至对应的支撑底座42，一组柱状结构包括一个第一柱状结构61和一个第二柱状结构62。示例性地，可以设置沿平行于CMOS测量电路***1的方向，CMOS红外传感结构2包括两组柱状结构，可以设置其中一组柱状结构用于传输正电信号，另一组柱状结构用于传输接地电信号。也可以如图1所示，设置沿平行于CMOS测量电路***1的方向，CMOS红外传感结构2包括四组柱状结构，四组柱状结构可以两两为一组分别传输正电信号和接 地电信号，由于红外探测器包括多个阵列排布的红外探测器像元，四组柱状结构也可以选择其中的两组柱状结构分别传输正电信号和接地电信号，另外两组柱状结构供给相邻的红外探测器像元进行电信号的传输。另外，反射层4包括反射板41和支撑底座42，反射层4的一部分用于充当第一柱状结构61与CMOS测量电路***1电连接的电介质，即支撑底座42，反射板41则用于反射红外线至悬空微桥结构40中的热敏感介质层，配合反射层4和悬空微桥结构40中的热敏感介质层之间形成的谐振腔实现红外线的二次吸收，以提高红外探测器的红外吸收率，优化红外探测器的红外探测性能。
图3为本发明实施例提供的另一种红外探测器像元的剖面结构示意图。如图3所示，也可以设置悬空微桥结构40包括多层梁结构11，图3示例性地设置悬空微桥结构40包括两层梁结构11，例如包括第一层梁结构111和第二层梁结构112，第一层梁结构111位于第二层梁结构112远离CMOS测量电路***1的一侧，第一层梁结构111和第二层梁结构112之间同样设置有柱状结构113，该柱状结构113用于在第一层梁结构111和第二层梁结构112之间的牺牲层释放后支撑第一层梁结构111。吸收板10中的电极层通过第二柱状结构62与第一层梁结构111中的电极层电连接，第一层梁结构111中的电极层通过第一层梁结构111和第二层梁结构112之间的柱状结构113与第二层梁结构112中的电极层电连接，第二层梁结构112中的电极层与第一柱状结构61电连接，吸收板10经由红外信号转换出来的电信号依次经过第二柱状结构62、第一层梁结构111、第一层梁结构111和第二层梁结构112之间的柱状结构113、第二层梁结构112、第一柱状结构61与支撑底座42传输至CMOS测量电路***1。其中，第一柱状结构61直接电连接支撑底座42和距离CMOS测量电路***1最近的梁结构11，第二柱状结构62直接电连接距离CMOS测量电路***1最近的吸收板10和距离该吸收板10最近的梁结构11。
图4为本发明实施例提供的另一种红外探测器像元的剖面结构示意图。如图4所示，也可以设置悬空微桥结构40包括多层吸收板10，图4示例性地设置悬空微桥结构40包括两层吸收板10，例如包括第一层吸收板1001和第二层吸收板1002，第一层吸收板1001位于第二层吸收板1002远离CMOS测量电路***1的一侧，第一层吸收板1001和第二层吸收板1002之间同样设置有柱状结构1003，该柱状结构1003用于在第一层吸收板1001和第二层吸收板1002之间的牺牲层释放后支撑第一层吸收板1001。第一层吸收板1001和第二层吸收板1002均包括电极层，二者中的电极层可以通过第一层吸收板1001和第二层吸收板1002之间的柱状结构1003电连接，二者中的电极层也可以不电连接，第二层吸收板1002中的电极层通过第二柱状结构62与梁结构11中的电极层电连接，梁结构11中的电极层通过第一柱状结构61与支撑底座42电连接，吸收板10经由红外信号转换出来的电信号依次经过第二柱状结构62、梁结构11、第一柱状结构61与支撑底座42传输至CMOS测量电路***1。另外，第一层吸收板1001和第二层吸收板1002内的热敏感介质层采用的材料可以相同也可以不同，设置悬空微桥结构40包括多层吸收板10，不同吸收板10中的热敏感介质层对应的谐振腔的高度不同，使得红外探测器可以吸收不同波段的红外辐射。其中，第一柱状结构61直接电连接支撑底座42和距离CMOS测量电路***1最近的梁结构11，第二柱状结构62直接电连接距离CMOS测量电路***1最近的吸收板10和距离该吸收板10最近的梁结构11。
图5为本发明实施例提供的另一种红外探测器像元的剖面结构示意图。与图1至图4所示结构不同的是，图5所示结构的红外探测器设置梁结构11位于吸收板10远离CMOS测量电路***1的一侧，且图5示例性地设置悬空微桥结构40包括一层梁结构11和一层吸收板10。具体地，吸收板10中的电极层通过第二柱状结构62与梁结构11中的电极层电连接，梁结构11中的电极层通过第一柱状结构61与支撑底座42电连接，吸收板10经由红外信号转换出来的电信号依次经过第二柱状结构62、梁结构11、第一柱状结构61与支撑底座42传输至CMOS测量电路***1。其中，当悬空微桥结构40包括多层梁结构11和多层吸收板10且梁结构11位于吸收板10远离CMOS测量电路***1的一侧时，第一柱状结构61直接电连接支撑底座42和距离CMOS测量电路***1最远的梁结构11，第二柱状结构62直接电连接距离CMOS测量电路***1最远的吸收板10和距离该吸收板10最近的梁结构11。
第一柱状结构61包括至少一层实心柱状结构和/或至少一层空心柱状结构，第二柱状结构62包括至少一层实心柱状结构和/或至少一层空心柱状结构，即第一柱状结构61可以包括至少一层实心柱状结构，也可以包括至少一层空心柱状结构，也可以包括至少一层实心柱状结构和至少一层空心柱状结构，第二柱状结构62可以包括至少一层实心柱状结构，也可以包括至少一层空心柱状结构，也可以包括至少一层实心柱状结构和至少一层空心柱状结构。图2示例性地设置第一柱状结构61包括一层空心柱状结构，即在第一柱状结构61所在位置形成空心结构，第二柱状结构62包括一层空心柱状结构，即在第二柱状结构62所在位置形成空心结构，空心柱状结构有利于减小第一柱状结构61以及第二柱状结构62的热导，进而降低第一柱状结构61以及第二柱状结构62产生的热传导对悬空微桥 结构40生成的电信号的影响，有利于提升红外探测器像元以及包括该红外探测器像元的红外探测器的红外探测性能。
图6为本发明实施例提供的另一种红外探测器像元的剖面结构示意图。结合图1和图6，图6示例性地设置第一柱状结构61包括一层实心柱状结构，即在第一柱状结构61所在位置形成实心金属结构，第二柱状结构62包括一层实心柱状结构，即在第二柱状结构62所在位置形成实心金属结构，实心柱状结构的力学稳定性较好，提高了第一柱状结构61与梁结构11和支撑底座42，以及第二柱状结构62与梁结构11和吸收板10之间的支撑连接稳定性，进而提高了红外传感器像元以及包括红外探测器像元的红外探测器的结构稳定性。另外，金属实心柱状结构的电阻较小，有利于减小吸收板与CMOS测量电路***1之间进行电信号传输过程中的信号损失，提升了红外探测器的红外探测性能，且金属实心柱状结构的尺寸更易精确控制，即实心柱状结构可以实现更小尺寸的柱状结构，有利于满足更小的芯片尺寸需求，实现红外探测器的小型化。
图7为本发明实施例提供的另一种红外探测器像元的剖面结构示意图，图8为本发明实施例提供的另一种红外探测器像元的剖面结构示意图。图7示例性地设置第一柱状结构61包括一层实心柱状结构，即在第一柱状结构61所在位置形成实心金属结构，第二柱状结构62包括一层空心柱状结构，即在第二柱状结构62所在位置形成空心。图8示例性地设置第一柱状结构61包括一层实心柱状结构，即在第一柱状结构61所在位置形成空心，第二柱状结构62包括一层实心柱状结构，即在第二柱状结构62所在位置形成实心金属结构，使得图7和图8所示的红外探测器同时具备上述实施例所述的空心柱状结构和实心柱状结构的优点。另外，结合图1至图8，设置吸收板9和梁结构10位于不同层，梁结构10不影响吸收板9所占面积，有利于增加吸收板10所占面积，提高红外探测器的红外探测灵敏度。
图9为本发明实施例提供的另一种红外探测器像元的剖面结构示意图。结合图1和图9，第一柱状结构61和和第二柱状结构62均可以包括多层实心柱状结构，图9以第一柱状结构61为例示意性地示出了第一柱状结构61包括两层实心柱状结构，即第一柱状结构61包括实心柱状结构610和实心柱状结构620，第二柱状结构62同样也可以采用类似图9所示的第一柱状结构61采用的多层实心柱状结构的设置方式，以使得红外探测器具备上述实施例所述的实心柱状结构的优点。也可以设置第一柱状结构61和第二柱状结构62均包括多层空心柱状结构，以使得红外探测器具备上述实施例所述的空心柱状结构的优点。另外，设置第一柱状结构61和第二柱状结构62均包括多层空心柱状结构，或者设置第一柱状结构61和第二柱状结构62均包括多层实心柱状结构，可减少同一柱状结构中的立柱的类型，有利于简化柱状结构的制备工艺。
图10为本发明实施例提供的另一种红外探测器像元的剖面结构示意图，图11为本发明实施例提供的另一种红外探测器像元的剖面结构示意图。结合图1、图10和图11，第一柱状结构61和和第二柱状结构62均可以包括至少一层实心柱状结构和至少一层空心柱状结构，图10和图11以第一柱状结构61为例示意性地示出了第一柱状结构61包括一层实心柱状结构630和一层空心柱状结构640，图10示例性地设置第一柱状结构61中的实心柱状结构630位于空心柱状结构640临近CMOS测量电路***1的一侧，图11示例性地设置第一柱状结构61中的实心柱状结构630位于空心柱状结构640远离CMOS测量电路***1的一侧，第二柱状结构62同样也可以采用类似图10和图11所示的第一柱状结构61采用的实心柱状结构叠加空心柱状结构的设置方式，以使得红外探测器具备上述实施例所述的空心柱状结构和实心柱状结构的优点。
示例性地，可以设置位于第一柱状结构61或第二柱状结构62中同一层的立柱为相同类型的立柱，即位于第一柱状结构61中同一层的立柱可以均为实心柱状结构或者均为空心柱状结构，位于第二柱状结构62中同一层的立柱可以均为实心柱状结构或者均为空心柱状结构，以实现位于同一层的立柱可以采用相同的工艺步骤形成，有利于简化柱状结构的制备工艺。另外，同一柱状结构中还可包括不同类型的立柱，同一层也可设置不同类型的立柱，可基于红外探测器的具体需求对立柱类型进行具体设置，本发明实施例对此不作具体限定。
由此，通过设置第一柱状结构61和/或第二柱状结构62包括多层立柱，有利于减小柱状结构中各层立柱的高度，立柱的高度越低，其陡直度越好，因此较易形成陡直度较好的立柱，从而优化柱状结构整体的陡直度，柱状结构的整体尺寸也可做到更小，有利于减小柱状结构所占空间，从而增大CMOS红外传感结构的有效面积，进而提高占空比，提高红外探测器的红外探测灵敏度。另外，柱状结构还可以包括更多层立柱，例如包括三层及以上层立柱，每个立柱可以是实心柱状结构或者空心柱状结构。另外，诸如图3中第一层梁结构111和第二层梁结构112之间的柱状结构113以及图4中第一层吸收板1001和第二层吸收板1002之间的柱状结构1003均可以包括至少一层实心 柱状结构和/或至少一层空心柱状结构，即图3中第一层梁结构111和第二层梁结构112之间的柱状结构113以及图4中第一层吸收板1001和第二层吸收板1002之间的柱状结构1003也可以采用上述实施例示出的空心柱状结构、实心柱状结构以及空心柱状结构和实心柱状结构组合的形式。
结合图1至图11，可以设置吸收板10上形成有至少一个孔状结构，孔状结构至少贯穿吸收板10中的介质层；和/或，梁结构11上形成有至少一个孔状结构，即可以设置仅吸收板10上形成有孔状结构，或者仅梁结构11上形成有孔状结构，或者吸收板10和梁结构11上均形成有孔状结构。示例性地，无论是吸收板10上的孔状结构还是梁结构11上的孔状结构，孔状结构均可以为圆形孔状结构、方形孔状结构、多边形孔状结构或者不规则图形孔状结构，本发明实施例对吸收板10和梁结构11上的孔状结构的形状不作具体限定，且本发明实施例对吸收板10和梁结构11上孔状结构的数量不作具体限定。
由此，设置吸收板10上形成有至少一个孔状结构，孔状结构至少贯穿吸收板10中的介质层，红外探测器中均设置有与吸收板10接触的最终需要释放的牺牲层，而牺牲层的释放需要在红外探测器制作工艺的最后用化学试剂对牺牲层进行腐蚀，吸收板10上的孔状结构有利于增加释放用的化学试剂与牺牲层的接触面积，加快牺牲层的释放速率。另外，吸收板10面积相对梁结构11面积较大，吸收板10上的孔状结构有利于释放吸收板10的内应力，优化吸收板10的平坦化程度，且有利于提高吸收板10的结构稳定性，进而提高整个红外探测器的结构稳定性。另外，设置梁结构11上形成有至少一个孔状结构，有利于进一步减小梁结构11的热导，提高红外探测器的红外探测灵敏度。
结合图2以及图5至图8，CMOS测量电路***1上方可以包括至少一层密闭释放隔绝层3，密闭释放隔绝层3用于在制作CMOS红外传感结构2的释放刻蚀过程中，保护CMOS测量电路***1不受工艺影响。可选地，密闭释放隔绝层3位于CMOS测量电路***1和CMOS红外传感结构2之间的界面和/或位于CMOS红外传感结构2中，即可以设置密闭释放隔绝层3位于CMOS测量电路***1和CMOS红外传感结构2之间的界面，或者设置密闭释放隔绝层3位于CMOS红外传感结构2中，或者设置CMOS测量电路***1和CMOS红外传感结构2之间的界面设置有密闭释放隔绝层3且CMOS红外传感结构2中设置有密闭释放隔绝层3，密闭释放隔绝层3用于在进行腐蚀工艺释放牺牲层时保护CMOS测量电路***1不受侵蚀，密闭释放隔绝层3至少包含一层介质层，构成密闭释放隔绝层3的介质材料包括碳化硅、碳氮化硅、氮化硅、非晶硅、非晶锗、非晶锗硅、硅、锗、硅锗合金、非晶碳或氧化铝中的至少一种。
图2以及图5至图8示例性地设置密闭释放隔绝层3位于CMOS红外传感结构2中，密闭释放隔绝层3例如可以为位于反射层4的金属互连层的上方的一层介质层或多层介质层，这里示例性地示出了密闭释放隔绝层3为一层介质层，此时构成密闭释放隔绝层3的材料可以包括碳化硅、碳氮化硅、氮化硅、非晶硅、非晶锗、非晶锗硅、硅、锗、硅锗合金、非晶碳或氧化铝中的至少一种，密闭释放隔绝层3的厚度小于牺牲层的厚度。红外探测器的谐振腔通过释放氧化硅牺牲层后的真空腔来实现，反射层4作为谐振腔的反射层，牺牲层位于反射层4和悬空微桥结构40之间，设置位于反射层4上的至少一层密闭释放隔绝层3选择碳化硅、碳氮化硅、氮化硅、非晶硅、非晶锗、非晶锗硅、硅、锗、硅锗合金、非晶碳或氧化铝等材料作为谐振腔的一部分时，不影响反射层4的反射效果，可以减小谐振腔高度，进而减小牺牲层的厚度，减小氧化硅构成的牺牲层的释放难度。另外，设置密闭释放隔绝层3与第一柱状结构61形成密闭结构，将CMOS测量电路***1与牺牲层完全隔开，实现了对CMOS测量电路***1的保护。
图12为本发明实施例提供的另一种红外探测器像元的剖面结构示意图。在上述实施例的基础上，图12同样设置密闭释放隔绝层3位于CMOS红外传感结构2中，密闭释放隔绝层3例如可以为位于反射层4的金属互连层的上方的一层介质层或多层介质层，这里示例性地示出了密闭释放隔绝层3为一层介质层，且密闭释放隔绝层3包覆第一柱状结构61，此时构成密闭释放隔绝层3的材料可以包括碳化硅、碳氮化硅、氮化硅、非晶硅、非晶锗、非晶锗硅、硅、锗、硅锗合金、非晶碳或氧化铝中的至少一种，密闭释放隔绝层3的厚度同样小于牺牲层的厚度。通过设置密闭释放隔绝层3包覆第一柱状结构61，一方面可以利用密闭释放隔绝层3作为第一柱状结构61处的支撑，提高了第一柱状结构61的稳定性，保证第一柱状结构61与悬空微桥结构40以及支撑底座42的电连接。另一方面，包覆第一柱状结构61的密闭释放隔绝层3可以减少第一柱状结构61与外界环境的接触，减少第一柱状结构61与外界环境的接触电阻，进而减少红外探测器像元的噪声，提高红外探测传感器的探测灵敏度，同时可以防止第一柱状结构61裸露在外的金属发生电击穿。同样地，红外探测器的谐振腔通过释放氧化硅牺牲层后的真空腔来实现， 反射层4作为谐振腔的反射层，牺牲层位于反射层4和悬空微桥结构40之间，设置位于反射层4上的至少一层密闭释放隔绝层3选择碳化硅、碳氮化硅、氮化硅、非晶硅、非晶锗、非晶锗硅、硅、锗、硅锗合金、非晶碳或氧化铝等材料作为谐振腔的一部分时，不影响反射层4的反射效果，可以减小谐振腔高度，进而减小牺牲层的厚度，减小氧化硅构成的牺牲层的释放难度。另外，设置密闭释放隔绝层3与第一柱状结构61形成密闭结构，将CMOS测量电路***1与牺牲层完全隔开，实现了对CMOS测量电路***1的保护。
图13为本发明实施例提供的另一种红外探测器像元的剖面结构示意图。与上述实施例所示结构的红外探测器不同的是，图13所示结构的红外探测器中，密闭释放隔绝层3位于CMOS测量电路***1和CMOS红外传感结构2之间的界面，例如密闭释放隔绝层3位于反射层4和CMOS测量电路***1之间，即密闭释放隔绝层3位于反射层4的金属互连层的下方，支撑底座42通过贯穿密闭释放隔绝层3的通孔与CMOS测量电路***1电连接。具体地，由于CMOS测量电路***1和CMOS红外传感结构2均采用CMOS工艺制备形成，当制备形成CMOS测量电路***1后，将制备形成包含有CMOS测量电路***1的晶圆传输至下一道工艺以制备形成CMOS红外传感结构2，因为氧化硅是CMOS工艺中最常用的介质材料，CMOS电路上多以氧化硅作为金属层间的绝缘层，所以腐蚀2um左右厚度的氧化硅时如果没有隔绝层作为阻挡，将会严重影响电路，为了确保释放牺牲层氧化硅时不会腐蚀CMOS测量电路***上的氧化硅介质，本发明实施例在CMOS测量电路***1和CMOS红外传感结构2之间的界面设置了密闭释放隔绝层3。在制备形成CMOS测量电路***1后，在CMOS测量电路***1上制备形成密闭释放隔绝层3，利用密闭释放隔绝层3对CMOS测量电路***1进行保护，而为了保证支撑底座42与CMOS测量电路***1的电连接，在制备形成密闭释放隔绝层3后，在密闭释放隔绝层3对应支撑底座42的区域采用刻蚀工艺形成通孔，通过通孔实现支撑底座42与CMOS测量电路***1的电连接。另外，设置密闭释放隔绝层3与支撑底座42形成密闭结构，将CMOS测量电路***1与牺牲层完全隔开，实现对CMOS测量电路***1的保护。
示例性地，构成密闭释放隔绝层3的材料可以包括碳化硅、碳氮化硅、氮化硅、非晶硅、非晶锗、非晶锗硅、硅、锗、硅锗合金、非晶碳或氧化铝中的至少一种。具体地，碳化硅、碳氮化硅、氮化硅、非晶硅、非晶锗、非晶锗硅、硅、锗、硅锗合金、非晶碳或氧化铝均为CMOS工艺抗腐蚀材料，即这些材料不会受牺牲层释放用试剂的腐蚀，因此密闭释放隔绝层3可以用于在进行腐蚀工艺释放牺牲层时保护CMOS测量电路***1不受侵蚀。另外，密闭释放隔绝层3覆盖CMOS测量电路***1设置，密闭释放隔绝层3还可以用于在制作CMOS红外传感结构2的释放刻蚀过程中，保护CMOS测量电路***1不受工艺影响。另外，当反射层4上设置有至少一层密闭释放隔绝层3时，设置构成密闭释放隔绝层3的材料包括硅、锗、硅锗合金、非晶硅、非晶锗、非晶硅锗、非晶碳、碳化硅、氧化铝、氮化硅或碳氮化硅中的至少一种，在设置密闭释放隔绝层3提高第一柱状结构61稳定性的同时，密闭释放隔绝层3几乎不会影响谐振腔内的反射过程，可以避免密闭释放隔绝层3影响谐振腔的反射过程，进而避免密闭释放隔绝层3对红外探测器探测灵敏度的影响。
结合图1至图13，CMOS红外传感结构2的CMOS制作工艺包括金属互连工艺、通孔工艺、IMD(Inter Metal Dielectric)工艺以及RDL(重新布线)工艺，CMOS红外传感结构2包括至少三层金属互连层、至少三层介质层和多个互连通孔，介质层至少包括两层牺牲层和一层热敏感介质层，金属互连层至少包括反射层4和两层电极层，热敏感介质层包括电阻温度系数大于设定值的热敏材料，电阻温度系数例如可以大于等于0.015/K，电阻温度系数大于设定值的热敏材料构成热敏感介质层，热敏感介质层用于将其吸收的红外辐射对应的温度变化转化为电阻变化，进而通过CMOS测量电路***1将红外目标信号转化成可实现电读出的信号。另外，热敏感介质层包括电阻温度系数大于设定值的热敏材料，电阻温度系数例如可以大于等于0.015/K，有利于提高红外探测器的探测灵敏度。
具体地，金属互连工艺用于实现上下两层金属互连层的电连接，例如实现第一柱状结构61中的导电层与支撑底座42的电连接，通孔工艺用于形成连接上下金属互连层的互连通孔，例如形成连接第一柱状结构61中的导电层与支撑底座的互连通孔，IMD工艺用于实现上下金属互连层之间的隔离，即电绝缘，例如实现吸收板10和梁结构11中的电极层与反射板41之间的电绝缘，RDL工艺即重布线层工艺，具体是指在电路顶层金属的上方重新布一层金属且与电路顶层金属有金属柱，例如钨柱电连接，采用RDL工艺可以在CMOS测量电路***1的顶层金属上再制备红外探测器中的反射层4，反射层4上的支撑底座42与CMOS测量电路***1的顶层金属电连接。另外，如图2所示，CMOS测量电路***1的CMOS制作工艺同样可以包括金属互连工艺和通孔工艺，CMOS测量电路***1包括间隔设置的金属互连层101、介质层102以及位于底部的硅衬底103，上下金属互连层101通过通孔104实现电连接。
结合图1至图13，CMOS红外传感结构2包括由反射层4和热敏感介质层构成的谐振腔以及控制热传递的悬空微桥结构40，CMOS测量电路***1用于测量和处理一个或多个CMOS红外传感结构2形成的阵列电阻值，并将红外信号转化为图像电信号，红外探测器包括多个阵列排布的红外探测器像元，每个红外探测器像元包括一个CMOS红外传感结构2。具体地，谐振腔例如可以由反射层4和吸收板10中热敏感介质层之间的空腔形成，红外光透过吸收板10在谐振腔内发生来回反射，以提高红外探测器的探测灵敏度。
图14为本发明实施例提供的一种CMOS测量电路***的结构示意图。结合图1至图14，CMOS测量电路***1包括偏压产生电路7、列级模拟前端电路8和行级电路9，偏压产生电路7的输入端连接行级电路9的输出端，列级模拟前端电路8的输入端连接偏压产生电路7的输出端，行级电路9中包括行级镜像像元Rsm和行选开关K1，列级模拟前端电路8中包括盲像元RD；其中，行级电路9分布在每个像素内并根据时序产生电路的行选通信号选取待处理信号，并在偏压产生电路7的作用下输出电流信号至列级模拟前端电路8以进行电流电压转换输出；行级电路9受行选开关K1控制而被选通时向偏压产生电路7输出第三偏置电压VRsm，偏压产生电路7根据输入的恒压及第三偏置电压VRsm输出第一偏置电压V1和第二偏置电压V2，列级模拟前端电路8根据第一偏置电压V1和第二偏置电压V2得到两路电流，并对所产生的两路电流之差进行跨阻放大并作为输出电压输出。
具体地，行级电路9包括行级镜像像元Rsm和行选开关K1，行级电路9用于根据行选开关K1的选通状态生成第三偏置电压VRsm。示例性地，行级镜像像元Rsm可以进行遮光处理，使行级镜像像元Rsm受到温度恒等于衬底温度的遮光片的固定辐射，行选开关K1可以用晶体管实现，行选开关K1闭合，行级镜像像元Rsm与偏压产生电路7的连接，即行级电路9受行选开关K1控制而被选通时向偏压产生电路7输出第三偏置电压VRsm。偏压产生电路7可以包括第一偏压产生电路71和第二偏压产生电路72，第一偏压产生电路71用于根据输入的恒压生成第一偏置电压V1，输入的恒压例如可以为电压恒定的正电源信号。第二偏压产生电路72可以包括偏压控制子电路721和多个选通驱动子电路722，偏压控制子电路721用于根据第三偏置电压VRsm控制选通驱动子电路722分别产生对应的第二偏置电压V2。
列级模拟前端电路8包括多个列控制子电路81，列控制子电路81与选通驱动子电路722对应设置，示例性地，可以设置列控制子电路81与选通驱动子电路722一一对应设置，选通驱动子电路722用于根据其自身的选通状态向对应的列控制子电路81提供第二偏置电压V2。示例性地，可以设置选通驱动子电路722被选通时，选通驱动子电路722向对应的列控制子电路81提供第二偏置电压V2；选通驱动子电路722未被选通时，选通驱动子电路722停止向对应的列控制子电路81提供第二偏置电压V2。
列级模拟前端电路8包括有效像元RS和盲像元RD，列控制子电路用于根据第一偏置电压V1和盲像元RD产生第一电流I1，以及根据第二偏置电压V2和有效像元RS产生第二电流I2，并对第一电流I1与第二电流I2的差值进行跨阻放大后输出，行级镜像像元Rsm与有效像元RS在相同环境温度下的温度漂移量相同。
示例性地，行级镜像像元Rsm与CMOS测量电路***1之间热绝缘，且对行级镜像像元Rsm进行遮光处理，行级镜像像元Rsm受到来自温度恒等于衬底温度的遮光片的固定辐射。有效像元RS的吸收板10与CMOS测量电路***1之间热绝缘，且有效像元RS接受外部辐射。行级镜像像元Rsm与有效像元RS的吸收板10都与CMOS测量电路***1之间热绝缘，因此行级镜像像元Rsm与有效像元RS均具有自热效应。
通过行选开关K1选通对应的行级镜像像元Rsm时，行级镜像像元Rsm与有效像元RS均由于焦耳热而发生阻值变化，但行级镜像像元Rsm与有效像元RS受到同样的固定辐射时，行级镜像像元Rsm与有效像元RS的阻值相同，二者的温度系数也相同，二者在相同环境温度下的温度漂移量相同，两者的变化同步，有利于利用行级镜像像元Rsm与有效像元RS在相同环境温度下的温度漂移量相同的特性，有效补偿行级镜像像元Rsm与有效像元RS由于自热效应而发生的阻值变化，实现CMOS测量电路***1的稳定输出。
另外，通过设置第二偏压产生电路72包括偏压控制子电路721和多个选通驱动子电路722，偏压控制子电路721用于根据行控制信号控制选通驱动子电路722分别产生对应的第二偏置电压V2，使得每行像素均有一路驱动单独驱动该行的像素整列，降低了对第二偏置电压V2的要求，即提高了偏压产生电路7的驱动能力，有利于利用CMOS测量电路***1驱动更大规模的红外探测器像素阵列。另外，CMOS测量电路***1的具体细节工作原理为本领域技术人员公知内容，这里不再赘述。
可选地，可以设置在CMOS测量电路***1的金属互连层上层或者同层制备CMOS红外传感结构2。具体地，这里的CMOS测量电路***1的金属互连层可以为CMOS测量电路***1中的顶层金属，结合图1至图13，可以 设置在CMOS测量电路***1的金属互连层上层制备CMOS红外传感结构2，CMOS红外传感结构2通过位于CMOS测量电路***1的金属互连层上层的支撑底座42与CMOS测量电路***1电连接，实现将经由红外信号转换成的电信号传输至CMOS测量电路***1。
图15为本发明实施例提供的另一种红外探测器的剖面结构示意图。也可以如图15所示，设置在CMOS测量电路***1的金属互连层同层制备CMOS红外传感结构2，即CMOS测量电路***1与CMOS红外传感结构2同层设置，例如可以如图15所示设置CMOS红外传感结构2位于CMOS测量电路***1的一侧，CMOS测量电路***1的顶部同样可以设置有密闭释放隔绝层3，以保护CMOS测量电路***1。
可选地，结合图1至图15，牺牲层用于使CMOS红外传感结构2形成镂空结构，构成牺牲层的材料是氧化硅，采用post-CMOS工艺腐蚀牺牲层。示例性地，post-CMOS工艺可以采用气相氟化氢、四氟化碳和三氟甲烷这些对氧化硅有腐蚀特性气体中的至少一种对牺牲层进行腐蚀。具体地，反射层4与悬空微桥结构40之间、相邻梁结构11之间、相邻吸收板10之间、梁结构11和临近该梁结构11的吸收板10之间均具有牺牲层(图1至图15中未示出)，当反射层4上设置有密闭释放隔绝层3时，密闭释放隔绝层3与悬空微桥结构40之间具有牺牲层，构成牺牲层的材料是氧化硅，以兼容CMOS工艺，可以采用post-CMOS工艺，即后CMOS工艺腐蚀牺牲层以在最终的红外探测芯片产品中释放掉牺牲层。
可选地，吸收板10用于吸收红外目标信号并将红外目标信号转换为电信号，吸收板10包括金属互连层和至少一层热敏感介质层，吸收板10中的金属互连层为吸收板10中的电极层，用于传输由红外信号转换得到的电信号，吸收板10中的电极层包括两个图案化电极结构，两个图案化电极结构分别输出正电信号和接地电信号，正电信号和接地电信号通过不同的第二柱状结构62、不同的梁结构11以及不同的第一柱状结构61传输至对应的支撑底座42，进而传输至CMOS测量电路***1。梁结构11至少包括金属互连层，梁结构11中的金属互连层为梁结构11中的电极层，梁结构11中的电极层和吸收板10中的电极层电连接。
第一柱状结构61采用金属互连工艺和通孔工艺连接对应的梁结构11和CMOS测量电路***1，结合图2至图8、图12和图15，第一柱状结构61上方需要通过贯穿反射层4和对应的梁结构11，即与第一柱状结构61直接电连接的梁结构11之间牺牲层的通孔与对应的梁结构11，即与第一柱状结构61直接电连接的梁结构11中的电极层电连接，第一柱状结构6的下方需要通过贯穿支撑底座42上介质层的通孔与对应的支撑底座42电连接，进而实现梁结构11中的电极层通过对应的第一柱状结构61与对应的支撑底座42电连接。
第二柱状结构62采用金属互连工艺和通孔工艺连接对应的吸收板10与对应的梁结构11，结合图2至图4、图6至图8、图12和图15，第二柱状结构62的上方需要通过贯穿对应的吸收板10，即与第二柱状结构62直接电连接的吸收板10与对应的梁结构11，即与第二柱状结构62直接电连接的梁结构11之间牺牲层的通孔，与对应的吸收板10，即与第二柱状结构62直接电连接的吸收板10中的电极层电连接，第二柱状结构62的下方需要通过贯穿覆盖对应的梁结构11，即覆盖与第二柱状结构62直接电连接的梁结构11中电极层的介质层的通孔，与对应的梁结构11，即与第二柱状结构62直接电连接的梁结构11中电极层电连接。如图5所示，第二柱状结构62的上方需要通过贯穿对应的吸收板10，即与第二柱状结构62直接电连接的吸收板10与对应的梁结构11，即与第二柱状结构62直接电连接的梁结构11之间的牺牲层的通孔，与对应的梁结构11，即与第二柱状结构62直接电连接的梁结构11中电极层电连接，第二柱状结构62的下方需要通过贯穿覆盖对应的吸收板10，即与第二柱状结构62直接电连接的吸收板10中的电极层的介质层的通孔，与对应的吸收板10，即与第二柱状结构62直接电连接的吸收板10中的电极层电连接。反射板41用于反射红外信号并与热敏感介质层形成谐振腔，即反射板41用于反射红外信号并与热敏感介质层形成谐振腔，反射层4包括至少一层金属互连层，金属互连层用于形成支撑底座42，也用于形成反射板41。
可选地，梁结构11包括第一介质层13、第一电极层14和第二介质层15，吸收板10包括第三介质层130和第二电极层140，或者吸收板10包括第二电极层140和第四介质层150，或者吸收板10包括第三介质层130、第二电极层140和第四介质层150，或者吸收板10包括支撑层、第三介质层130、第二电极层140和第四介质层150，或者吸收板10包括第三介质层130、第二电极层140、第四介质层150和钝化层，或者吸收板10包括支撑层、第三介质层130、第二电极层140、第四介质层150和钝化层；其中，构成第一介质层13的材料包括由非晶硅、非晶锗、非晶锗硅或非晶碳制备的电阻温度系数大于设定值的材料中的至少一种，构成第二介质层15的材料包括由非晶硅、非晶锗、非晶锗硅或非晶碳制备的电阻温度系数大于设定值的材料中的至少一种，构成第三介质层130的材料包括 由非晶硅、非晶锗、非晶锗硅或非晶碳制备的电阻温度系数大于设定值的材料中的至少一种，构成第四介质层150的材料包括由非晶硅、非晶锗、非晶锗硅或非晶碳制备的电阻温度系数大于设定值的材料中的至少一种，设定值例如可以为0.015/K。
具体地，结合图2、图5、图7、图8、图12以及图15，可以设置沿远离CMOS测量电路***1的方向，梁结构11依次包括第一介质层13、第一电极层14和第二介质层15，吸收板10依次包括第三介质层130、第二电极层140和第四介质层150，即可以设置梁结构11和吸收板10的膜层构成相同，设置构成第一介质层13的材料包括由非晶硅、非晶锗、非晶锗硅或非晶碳制备的电阻温度系数大于设定值的材料中的至少一种，构成第二介质层15的材料包括由非晶硅、非晶锗、非晶锗硅或非晶碳制备的电阻温度系数大于设定值的材料中的至少一种，构成第三介质层130的材料包括由非晶硅、非晶锗、非晶锗硅或非晶碳制备的电阻温度系数大于设定值的材料中的至少一种，构成第四介质层150的材料包括由非晶硅、非晶锗、非晶锗硅或非晶碳制备的电阻温度系数大于设定值的材料中的至少一种，即第一介质层13在充当支撑层的同时充当热敏感介质层，第二介质层15在充当钝化层的同时同样充当热敏感介质层，第三介质层130在充当支撑层的同时充当热敏感介质层，第四介质层150在充当钝化层的同时同样充当热敏感介质层，有利于减小吸收板10和梁结构11的厚度，降低梁结构11的热导率，简化红外探测器的制备工艺。
具体地，支撑层用于在释放掉支撑层下方的牺牲层后支撑位于支撑层上方的膜层，热敏感介质层用于将红外温度检测信号转换为红外检测电信号，第二电极层140和第一电极层14用于将吸收板10中的热敏感介质层转换出来的红外检测电信号通过左右两侧的梁结构11传输至CMOS测量电路***1，两个梁结构11分别传输红外检测电信号的正负信号，CMOS测量电路***1中的读出电路通过对获取到的红外检测电信号的分析实现非接触式的红外温度检测，钝化层用于保护被钝化层包裹的电极层不被氧化或者腐蚀。对应梁结构11，第一电极层14位于第一介质层13，即支撑层和第二介质层15，即钝化层形成的密闭空间内，实现了梁结构11中第一电极层14的保护；对应吸收板10，第二电极层140位于第三介质层130，即支撑层和第四介质层150，即钝化层形成的密闭空间内，实现了吸收板10中第二电极层140的保护。
示例性地，在构成第一介质层13的材料包括由非晶硅、非晶锗、非晶锗硅或非晶碳制备的电阻温度系数大于设定值的材料中的至少一种，构成第二介质层15的材料包括由非晶硅、非晶锗、非晶锗硅或非晶碳制备的电阻温度系数大于设定值的材料中的至少一种，构成第三介质层130的材料包括由非晶硅、非晶锗、非晶锗硅或非晶碳制备的电阻温度系数大于设定值的材料中的至少一种，构成第四介质层150的材料包括由非晶硅、非晶锗、非晶锗硅或非晶碳制备的电阻温度系数大于设定值的材料中的至少一种的前提下，优选地，梁结构11和吸收板10中的膜层还可以满足以下几种情况：第一种情况可以设置沿远离CMOS测量电路***1的方向，梁结构11依次包括第一介质层13、第一电极层14和第二介质层15，吸收板10依次包括第三介质层130和第二电极层140；第二种情况可以设置沿远离CMOS测量电路***1的方向，梁结构11依次包括第一介质层13、第一电极层14和第二介质层15，吸收板10依次包括第二电极层140和第四介质层150；第三种情况可以设置沿远离CMOS测量电路***1的方向，梁结构11依次包括第一介质层13、第一电极层14和第二介质层15，吸收板10依次包括支撑层、第三介质层130、第二电极层140和第四介质层150或者吸收板10依次包括支撑层、第二电极层140、第三介质层130和第四介质层150或者吸收板10依次包括支撑层、第三介质层130、第四介质层150和第二电极层140；第四种情况可以设置沿远离CMOS测量电路***1的方向，梁结构11依次包括第一介质层13、第一电极层14和第二介质层15，吸收板10依次包括第三介质层130、第二电极层140、第四介质层150和钝化层或者吸收板10依次包括第二电极层140、第三介质层130、第四介质层150和钝化层或者吸收板10依次包括第三介质层130、第四介质层150、第二电极层140和钝化层；第五种情况可以设置沿远离CMOS测量电路***1的方向，梁结构11依次包括第一介质层13、第一电极层14和第二介质层15，吸收板10依次包括支撑层、第三介质层130、第二电极层140、第四介质层150和钝化层或者吸收板10依次包括支撑层、第二电极层140、第三介质层130、第四介质层150和钝化层或者吸收板10依次包括支撑层、第三介质层130、第四介质层150、第二电极层140和钝化层。前述五种情况中，第一介质层13、第二介质层15、第三介质层130和第四介质层15-均可充当热敏感介质层，且位于梁结构11或者吸收板10最下方的介质层还可以充当支撑层，位于梁结构11或者吸收板10最上方的介质层还可以充当钝化层。
可选地，梁结构11包括第一电极层14，或者梁结构11包括第一介质层13和第一电极层14，或者梁结构11包括第一电极层14和第二介质层15，或者梁结构11包括第一电极层14和第一热敏感介质层，或者梁结构11包括第 一介质层13、第一电极层14和第二介质层15，或者梁结构11包括第一介质层13、第一电极层14和第一热敏感介质层，或者梁结构11包括第一电极层14、第一热敏感介质层和第二介质层15，或者梁结构11包括第一介质层13、第一电极层14、第一热敏感介质层和第二介质层15，吸收板10包括第二电极层140和第二热敏感介质层120，或者吸收板10包括第三介质层130、第二电极层140和第二热敏感介质层120，或者吸收板10包括第二电极层140、第二热敏感介质层120和第四介质层150，或者吸收板10包括第三介质层130、第二电极层140、第二热敏感介质层120和第四介质层150；其中，构成第一介质层13的材料包括非晶硅、非晶锗、非晶锗硅、氧化铝或非晶碳中的至少一种，构成第二介质层15的材料包括非晶硅、非晶锗、非晶锗硅、氧化铝或非晶碳中的至少一种，构成第三介质层130的材料包括非晶硅、非晶锗、非晶锗硅、氧化铝或非晶碳中的至少一种，构成第四介质层150的材料包括非晶硅、非晶锗、非晶锗硅、氧化铝或非晶碳中的至少一种，构成第一热敏感介质层的材料包括由氧化钛、氧化钒、非晶硅、非晶锗、非晶锗硅、非晶锗氧硅、硅、锗、锗硅、锗氧硅、石墨烯、钛酸锶钡薄膜、铜或铂制备的电阻温度系数大于设定值的材料中的至少一种，构成第二热敏感介质层120的材料包括由氧化钛、氧化钒、非晶硅、非晶锗、非晶锗硅、非晶锗氧硅、硅、锗、锗硅、锗氧硅、石墨烯、钛酸锶钡薄膜、铜或铂制备的电阻温度系数大于设定值的材料中的至少一种，设定值例如可以为0.015/K。
如图6所示，可以设置沿远离CMOS测量电路***1的方向，梁结构11依次包括第一介质层13、第一电极层14和第二介质层15，吸收板10依次包括第三介质层130、第二电极层140、第二热敏感介质层120和第四介质层150，此时第一介质层13以及第三介质层130均充当支撑层，第二介质层15以及第四介质层150均充当钝化层，第二热敏感介质层120实现将红外信号转换为电信号。对应梁结构11，第一电极层14位于第一介质层13，即支撑层和第二介质层15，即钝化层形成的密闭空间内，实现了对梁结构11中第一电极层14的保护；对应吸收板10，第二电极层140位于第三介质层130，即支撑层和第四介质层150，即钝化层形成的密闭空间内，实现了对吸收板10中第二电极层140的保护。
示例性地，构成第一介质13层的材料包括非晶硅、非晶锗、非晶锗硅、氧化铝或非晶碳中的至少一种，构成第二介质层15的材料包括非晶硅、非晶锗、非晶锗硅、氧化铝或非晶碳中的至少一种，构成第三介质层130的材料包括非晶硅、非晶锗、非晶锗硅、氧化铝或非晶碳中的至少一种，构成第四介质层150的材料包括非晶硅、非晶锗、非晶锗硅、氧化铝或非晶碳中的至少一种的前提下，优选地，梁结构11和吸收板10中的膜层还可以满足以下几种情况：第一种情况可以设置梁结构11包括第一电极层14，沿远离CMOS测量电路***1的方向，吸收板10依次包括第二电极层140和第二热敏感介质层120或者吸收板10依次包括第二热敏感介质层120和第二电极层140；第二种情况可以设置梁结构11包括第一电极层14，沿远离CMOS测量电路***1的方向，吸收板10依次包括第三介质层130、第二电极层140和第二热敏感介质层120或者吸收板10依次包括第三介质层130、第二热敏感介质层120和第二电极层140；第三种情况可以设置梁结构11包括第一电极层14，沿远离CMOS测量电路***1的方向，吸收板10依次包括第二电极层140、第二热敏感介质层120和第四介质层150或者吸收板10依次包括第二热敏感介质层120、第二电极层140和第四介质层150；第四种情况可以设置梁结构11包括第一电极层14，沿远离CMOS测量电路***1的方向，吸收板10依次包括第三介质层130、第二电极层140、第二热敏感介质层120和第四介质层150或者吸收板10依次包括第三介质层130、第二热敏感介质层120、第二电极层140和第四介质层150。
第五种情况可以设置沿远离CMOS测量电路***1的方向，梁结构11依次包括第一介质层13和第一电极层14或者梁结构11依次包括第一电极层14和第二介质层15，吸收板10依次包括第二电极层140和第二热敏感介质层120或者吸收板10依次包括第二热敏感介质层120和第二电极层140；第六种情况可以设置沿远离CMOS测量电路***1的方向，梁结构11依次包括第一介质层13和第一电极层14或者梁结构11依次包括第一电极层14和第二介质层15，吸收板10依次包括第三介质层130、第二电极层140和第二热敏感介质层120或者吸收板10依次包括第三介质层130、第二热敏感介质层120和第二电极层140；第七种情况可以设置沿远离CMOS测量电路***1的方向，梁结构11依次包括第一介质层13和第一电极层14或者梁结构11依次包括第一电极层14和第二介质层15，吸收板10依次包括第二电极层140、第二热敏感介质层120和第四介质层150或者吸收板10依次包括第二热敏感介质层120、第二电极层140和第四介质层150；第八种情况可以设置沿远离CMOS测量电路***1的方向，梁结构11依次包括第一介质层13和第一电极层14或者梁结构11依次包括第一电极层14和第二介质层15，吸收板10依次包括第三介质层130、第二电极层140、第二热敏感介质层120和第四介质层150或者吸收板10依次包括第三介质层130、第二热敏感介质层120、第二电极层140和第四介质层150。
第九种情况可以设置沿远离CMOS测量电路***1的方向，梁结构11依次包括第一电极层14和第一热敏感介质层且吸收板10依次包括第二电极层140和第二热敏感介质层120，或者梁结构11依次包括第一热敏感介质层和第一电极层14且吸收板10依次包括第二热敏感介质层120和第二电极层140；第十种情况可以设置沿远离CMOS测量电路***1的方向，梁结构11依次包括第一电极层14和第一热敏感介质层且吸收板10依次包括第三介质层130、第二电极层140和第二热敏感介质层120，或者梁结构11依次包括第一热敏感介质层和第一电极层14且吸收板10依次包括第三介质层130、第二热敏感介质层120和第二电极层140；第十一种情况可以设置沿远离CMOS测量电路***1的方向，梁结构11依次包括第一电极层14和第一热敏感介质层且吸收板10依次包括第二电极层140、第二热敏感介质层120和第四介质层150，或者梁结构11依次包括第一热敏感介质层和第一电极层14且吸收板10依次包括第二热敏感介质层120、第二电极层140和第四介质层150；第十二种情况可以设置沿远离CMOS测量电路***1的方向，梁结构11依次包括第一电极层14和第一热敏感介质层且吸收板10依次包括第三介质层130、第二电极层140、第二热敏感介质层120和第四介质层150，或者梁结构11依次包括第一热敏感介质层和第一电极层14且吸收板10依次包括第三介质层130、第二热敏感介质层120、第二电极层140和第四介质层150。
参照上述不同情况的论述逻辑，当构成第一介质13层的材料包括非晶硅、非晶锗、非晶锗硅、氧化铝或非晶碳中的至少一种，构成第二介质层15的材料包括非晶硅、非晶锗、非晶锗硅、氧化铝或非晶碳中的至少一种，构成第三介质层130的材料包括非晶硅、非晶锗、非晶锗硅、氧化铝或非晶碳中的至少一种，构成第四介质层150的材料包括非晶硅、非晶锗、非晶锗硅、氧化铝或非晶碳中的至少一种时，还可以有梁结构11择一膜层情况与吸收板10择一膜层情况的多种组合方式，即梁结构11择一膜层情况与吸收板10择一膜层情况可以任意组合构成多种结构的红外探测器，这里不再赘述。需要说明的是，无论上述哪种梁结构11与吸收板10的膜层设置方案，需要确保梁结构11中至少有第一电极层14，吸收板12中至少有第二电极层140以及充当热敏感介质层的介质层。
示例性地，可以设置构成第一电极层14的材料包括钛、氮化钛、钽、氮化钽、钛钨合金、镍铬合金、镍铂合金、镍硅合金、镍、铬、铂、钨、铝或铜中的至少一种，其中当以钛、氮化钛、钽或氮化钽中的至少一种作为第一电极层14的材料时，优选地设置第一电极层14被第一介质层13和第二介质层15包覆，防止第一电极层14受刻蚀过程影响。构成第二电极层140的材料包括钛、氮化钛、钽、氮化钽、钛钨合金、镍铬合金、镍铂合金、镍硅合金、镍、铬、铂、钨、铝或铜中的至少一种，其中当以钛、氮化钛、钽或氮化钽中的至少一种作为第二电极层140的材料时，优选地设置第二电极层140被第三介质层130和第四介质层150包覆，防止第二电极层140受刻蚀过程影响。
另外，上述实施例所述的可以设置吸收板10上形成有至少一个孔状结构，孔状结构至少贯穿吸收板10中的介质层，梁结构11上形成有至少一个孔状结构，当梁结构11仅包括第一电极层14时，梁结构11上的孔状结构贯穿梁结构11中的第一电极层14，当梁结构11包括介质层时，孔状结构至少贯穿梁结构11中的介质层，以图2所示结构的红外探测器为例，此时吸收板10上的孔状结构可以贯穿吸收板10中的第三介质层130和第四介质层150，吸收板10上的孔状结构也可以贯穿吸收板10中的第三介质层130、第二电极层140和第四介质层150，梁结构11上的孔状结构可以贯穿梁结构11中未设置第一电极层14位置的第一介质层13和第二介质层15，或者梁结构11上的孔状结构贯穿梁结构11中的第一介质层13、电极层14和第二介质层15。以图6所示结构的红外探测器为例，此时吸收板10上的孔状结构可以贯穿吸收板10中的第三介质层130和第四介质层150，吸收板10上的孔状结构也可以贯穿吸收板10中的第三介质层130、第二电极层140和第四介质层150，吸收板10上的孔状结构也可以贯穿吸收板10中的第三介质层130、第二电极层140、第二热敏感介质层120和第四介质层150，梁结构11上的孔状结构可以贯穿梁结构11中未设置电第一电极层14位置的第一介质层13和第二介质层15，或者梁结构11上的孔状结构贯穿梁结构11中的第一介质层13、电极层14和第二介质层15。
可选地，可以设置红外探测器还包括超材料结构和/或偏振结构，超材料结构或者偏振结构为至少一层金属互连层。图16为本发明实施例提供的另一种红外探测器的立体结构示意图，如图16所示，构成超材料结构的金属互连层可以包括多个阵列排布的金属重复单元20，每个金属重复单元包括两个对角设置的L型图案化结构21，此时红外探测器的红外吸收谱段为3微米至30微米波段。也可以如图17所示，设置构成超材料结构的金属互连层上设置有多个阵列排布的图案化镂空结构22，图案化镂空结构22呈开口圆环状，此时红外探测器的红外吸收谱段为3微米至30微米波段。也可以如图18所示，设置构成超材料结构的金属互连层上设置有多个直线条带结构23和多个回折条带结构24，直线条带结构23和回折条带结构24沿垂直于直线条带结构23的方向交替排列，此时红外探测 器的红外吸收谱段为8微米至24微米波段。也可以如图19所示，设置构成超材料结构的金属互连层上设置有多个阵列排布的图案化镂空结构25，图案化镂空结构25呈正六边形，此时红外探测器的红外吸收谱段为3微米至30微米波段。需要说明的是，本发明实施例对构成超材料结构的金属互连层上的具体图案不作限定，确保重复的图案能实现超材料结构或者偏振结构的功能即可。
具体地，超材料是一种基于广义斯涅尔定律，通过控制波前相位、振幅以及偏振进行电磁或光学波束调控的材料，也可以称为超表面或者超结构，超表面或超结构为超薄的二维阵列平面，可以灵活有效地操纵电磁波的相位、极化方式以及传播模式等特性。本发明实施例利用如图16至图19所示的图案化结构形成电磁超材料结构，即形成了具备超常电磁性质的人工复合结构或复合材料，以实现对电磁波和光波性能的剪裁，从而获得电磁波吸收特殊器件，本发明实施例利用图案化结构形成的超材料结构与红外探测器结构相结合，超材料结构吸收的红外电磁波会增强红外探测器本身吸收的红外电磁波信号，超材料结构吸收的红外电磁波与微桥式探测器结构本身吸收的红外电磁波叠加，超材料结构吸收的红外电磁波与入射红外电磁波的分量产生耦合，也就是说，超材料结构的设置使得吸收的红外电磁波信号的强度增加，从而提高了红外探测器对入射红外电磁波的吸收率。
图20为本发明实施例提供的一种偏振结构的俯视结构示意图。如图20所示，偏振结构26可以包括若干个依次排列的光栅27，相邻光栅27之间的间隔为10nm至500nm，光栅27可以如图20所示为直线型，也可以如图21和图22所示为弯曲型，且偏振结构26中的光栅27可以任意角度旋转或组合，偏振结构26的设置可以使CMOS传感结构吸收特定方向的偏振光。示例性地，光栅27可以为刻蚀金属薄膜，即刻蚀金属互连层形成的结构。具体地，偏振是光的一个重要信息，偏振探测可以把信息量从三维，例如光强、光谱和空间，扩充到七维，例如光强、光谱、空间、偏振度、偏振方位角、偏振椭率和旋转的方向，由于地物背景的偏振度远小于人造目标的偏振度，因此红外偏振探测技术在空间遥感领域有非常重要的应用。在现有的偏振探测***中，偏振元件独立于探测器之外，需要在整机的镜头上增加偏振片，或者进行偏振镜头的设计，这种方法的成本比较高，设计难度也比较大。通过旋转偏振元件获取偏振信息，这种现有的偏振探测***的缺点是光学元件复杂，而且光路***复杂。另外，通过偏振片与探测器组合采集的偏振图像需要通过图像融合算法进行处理，不仅复杂而且也相对不准确。
本发明实施例通过将偏振结构26与非制冷红外探测器进行单片集成，不仅可以实现偏振敏感型红外探测器的单片集成，而且极大地降低了光学设计的难度，简化了光学***，减少了光学元件，降低了光学***的成本。另外，通过单片集成的偏振型非制冷红外探测器采集的图像为原始红外图像信息，CMOS测量电路***1只需要处理红外探测器探测的信号就可以得到准确的图像信息，而不需要进行现有探测器的图像融合，极大的提升了图像的真实性与有效性。另外，偏振结构26也可以位于吸收板10上方且不与吸收板10接触设置，即偏振结构26可以为位于悬空微桥结构40上方的悬空结构，偏振结构26与悬空微桥结构40可以采用柱子连接支撑的方式或者采用键合支撑的方式，偏振结构26与红外探测器像元可以一一对应键合，也可以采用整个芯片键合的方式。由此单独悬空的金属光栅结构不会造成红外敏感微桥结构的形变，不会影响敏感薄膜的热敏特性。
示例性地，结合图1至图22，超材料结构为至少一层金属互连层，偏振结构为至少一层金属互连层，悬空微桥结构40包括第三介质层130和第四介质层150时，超材料结构或者偏振结构可以是第三介质层130临近CMOS测量电路***1一侧的至少一层金属互连层，例如可以设置构成超材料结构或者偏振结构的金属互连层位于第三介质层130临近CMOS测量电路***1的一侧且与第三介质层130接触设置。示例性地，也可以设置超材料结构或者偏振结构是第四介质层150远离CMOS测量电路***1一侧的至少一层金属互连层，例如可以设置构成超材料结构或者偏振结构的金属互连层位于第四介质层150远离CMOS测量电路***1的一侧且与第四介质层150接触设置。示例性地，也可以设置超材料结构或者偏振结构为位于第三介质层130和第四介质层150中间的且与第二电极层140电绝缘的至少一层金属互连层，例如可以设置构成超材料结构或者偏振结构的金属互连层位于第三介质层130与第二电极层140之间且与第二电极层140电绝缘或者位于第四介质层150与第二电极层140之间且与第二电极层140电绝缘。示例性地，也可以设置第二电极层140作为超材料结构层或者偏振结构层，即可以在第二电极层140上形成上述实施例所述的图案化结构。
可选地，结合图6和图7，可以设置第一柱状结构61包括至少一层实心柱状结构，实心柱状结构包括实心结构601，图6和图7示例性地设置第一柱状结构61的实心结构601的侧壁包覆有至少一层介质层602且实心结构601与一层介质层602接触设置，图6和图7示例性地设置第一柱状结构61的实心结构601的侧壁包覆有一层介质层602且实心结构601与该介质层602接触设置，构成第一柱状结构61的实心结构601的材料包括钨、铜或铝中的至 少一种，构成介质层602的材料可以包括氧化硅、氮化硅、碳化硅、非晶碳、氧化铝、氧化钛、氧化钒、非晶硅、非晶锗、非晶锗硅、非晶锗氧硅、硅、锗、锗硅、锗氧硅、石墨烯、铜或铂中的至少一种。
具体地，包覆第一柱状结构61的实心结构601的至少一层介质层602可以起到电绝缘的作用，利用介质层602保护第一柱状结构61的实心结构601以避免外部材料侵蚀第一柱状结构61的实心结构601的同时，介质层602可以作为第一柱状结构61的辅助支撑结构，其与第一柱状结构61的实心结构601共同支撑悬空微桥结构40，有利于提高第一柱状结构61的力学稳定性，从而提高红外传感器的结构稳定性。另外，设置构成第一柱状结构61的介质层602的材料可以包括氧化硅、氮化硅、碳化硅、非晶碳、氧化铝、氧化钛、氧化钒、非晶硅、非晶锗、非晶锗硅、非晶锗氧硅、硅、锗、锗硅、锗氧硅、石墨烯、铜或铂中的至少一种，前述材料均不会被气相氟化氢、四氟化碳或三氟甲烷腐蚀，因此在后续工艺步骤中利用气相氟化氢、四氟化碳和三氟甲烷腐蚀牺牲层时不会腐蚀包覆第一柱状结构61的实心结构601的介质层602。示例性地，可以如图6和图7所示，设置包覆第一柱状结构61的实心结构601的介质层602为梁结构11中的第一介质层13，包覆第一柱状结构61的实心结构601的介质层可以是单独制作的介质层，或者也可以设置包覆第一柱状结构61的实心结构601的介质层为梁结构11中的第二介质层15或第一热敏感介质层。
图23为本发明实施例提供的另一种红外探测器像元的剖面结构示意图。图23仅示例性地示出了第一柱状结构61以及部分梁结构11，未示出梁结构11上方结构，与图6和图7所示结构的红外探测器不同的是，图23所示结构的红外探测器设置第一柱状结构61的实心结构601的侧壁与牺牲层(图23中未示出)接触设置，该牺牲层是对应的梁结构11，即与第一柱状结构61直接电连接的梁结构11和CMOS测量电路***1之间的牺牲层，构成第一柱状结构61的实心结构601的材料包括钨、铜或铝中的至少一种，即设置第一柱状结构61仅包括实心的钨柱、或铜柱或铝柱，设置第一柱状结构61的实心结构601的侧壁与牺牲层接触设置，使得第一柱状结构61的制备工艺较为简单且易于实现，有利于降低整个红外探测器的制备难度。
图24为本发明实施例提供的另一种红外探测器像元的剖面结构示意图。图24同样仅示例性地示出了第一柱状结构61以及部分梁结构11，未示出梁结构11上方结构，与图6、图7和图23所示结构的红外探测器不同的是，图24所示结构的红外探测器设置第一柱状结构61的实心结构601的侧壁以及第一柱状结构61的实心结构601临近CMOS测量电路***1的表面包覆有至少一层粘附层603，图24示例性地设置第一柱状结构61的实心结构601的侧壁以及第一柱状结构61的实心结构601临近CMOS测量电路***1的表面包覆有一层粘附层603，第一柱状结构61内最***的粘附层603远离第一柱状结构61的实心结构601的侧壁包覆有介质层604，构成第一柱状结构61的实心结构601的材料包括钨、铜或铝中的至少一种，构成粘附层603的材料包括钛、氮化钛、钽或氮化钽中的至少一种，构成介质层604的材料包括氧化硅、氮化硅、碳化硅、非晶碳、氧化铝、氧化钛、氧化钒、非晶硅、非晶锗、非晶锗硅、非晶锗氧硅、硅、锗、锗硅、锗氧硅、石墨烯、铜或铂中的至少一种。
具体地，粘附层603用于增强第一柱状结构61与支撑底座42之间的连接性能，包括增强器机械连接性能，提升结构稳定性，也包括增强器电学连接性能，减小接触电阻，减少电信号传输过程中的损耗，提升了红外探测器的红外探测性能，且通过设置粘附层603还包围第一柱状结构61的实心结构601的侧面，可增大粘附层603与第一柱状结构61的实心结构601的接触面积，相当于扩宽了电信号的传输通道，减小了第一柱状结构61的传输电阻，从而进一步减少了电信号传输损耗，提升了红外探测器的红外探测性能。另外，构成粘附层603的材料包括钛、氮化钛、钽或氮化钽中的至少一种，采用前述四种导电材料中的至少一种形成粘附层603，可满足利用粘附层603增强支撑底座42与第一柱状结构61之间的机械和电学连接性能的要求，且有利于实现采用CMOS工艺制备粘附层603的需求，即满足CMOS工艺集成化的需求。
第一柱状结构61内最***的粘附层603远离第一柱状结构61的实心结构601的侧壁还包覆有介质层604，在利用粘附层603增强第一柱状结构61与支撑底座42之间的连接性能的同时，包覆粘附层603侧壁的介质层604起到绝缘保护的作用，且能够利用介质层604起到对第一柱状结构61的辅助支撑的作用，以提升红外探测器的结构稳定性和红外探测性能。同样地，设置构成介质层604的材料可以包括氧化硅、氮化硅、碳化硅、非晶碳、氧化铝、氧化钛、氧化钒、非晶硅、非晶锗、非晶锗硅、非晶锗氧硅、硅、锗、锗硅、锗氧硅、石墨烯、铜或铂中的至少一种，前述材料均不会被气相氟化氢、四氟化碳或三氟甲烷腐蚀，因此在后续工艺步骤中利用气相氟化氢、四氟化碳和三氟甲烷腐蚀牺牲层时不会腐蚀包覆粘附层603的介质层604。示例性地，可以如图24所示，设置包覆第一柱状结构61的实心结构601的粘附层603为梁结构11中的第一电极层14，包覆粘附层603的介质层604为梁结构11 中的第一介质层13，包覆第一柱状结构61的实心结构601的粘附层603和/或包覆粘附层603的介质层也可以是单独制作的膜层，或者也可以设置包覆粘附层603的介质层为梁结构11中的第二介质层15或第一热敏感介质层。
可选地，结合图23和图24，红外探测器还可以包括第一加固结构161，第一加固结构161对应第一柱状结构61所在位置设置，第一加固结构161用于增强第一柱状结构61与梁结构11之间的连接稳固性，第一加固结构161包括加重块状结构。具体地，第一加固结构161的设置可有效增强第一柱状结构61与梁结构11之间的力学稳定性，从而提升红外探测器像元及包括红外探测器像元的红外探测器的结构稳定性。
图25为本发明实施例提供的另一种红外探测器像元的剖面结构示意图。图25同样仅示例性地示出了第一柱状结构61以及部分梁结构11，未示出梁结构11上方结构，如图25所示，可以设置构成第一加固结构161的加重块状结构位于梁结构11远离CMOS测量电路***1的一侧且构成第一加固结构161的加重块状结构与梁结构11接触设置。具体地，设置构成第一加固结构161的加重块状结构位于梁结构11远离CMOS测量电路***1的一侧且构成第一加固结构161的加重块状结构与梁结构11接触设置，相当于在梁结构11对应第一柱状结构61的位置增加一个盖板，利用第一加固结构161自身的重量压住梁结构，从而增强梁结构11与第一柱状结构61之间的力学强度，提升红外探测器的结构稳定性。
示例性地，结合图23和图24，也可以设置梁结构11对应第一柱状结构61所在位置形成有通孔，通孔露出至少部分第一柱状结构61，构成第一加固结构161的加重块状结构包括填充通孔的第一部分和位于通孔外的第二部分，第二部分的正投影覆盖第一部分的正投影。具体地，梁结构11对应第一柱状结构61所在位置形成镂空区，即形成有通孔，通孔外的构成第一加固结构161的加重块状结构的第二部分与通孔内的加重块状结构的第一部分一体成型，第一部分填充或者说嵌入通孔内并与第一柱状结构61接触设置，第二部分的正投影覆盖第一部分的正投影，即第二部分的面积大于第一部分的面积。该红外探测器像元中，第一加固结构161相当于由第一部分和第二部分构成的铆钉结构，第一部分的底面接触柱状结构的顶面，第一部分的侧面还接触梁结构形成的镂空区的侧面，第二部分的下表面接触通孔外表面。由此，在利用第一加固结构161自身的重力压住梁结构11的同时，还增大了第一加固结构161与第一柱状结构61以及梁结构11的接触面积，进一步增大了梁结构11与第一柱状结构61之间的力学强度，提升红外探测器的结构稳定性。
示例性地，可以设置构成第一加固结构161的加重块状结构的材料包括非晶硅、非晶锗、非晶硅锗、非晶碳、碳化硅、氧化铝、氮化硅、碳氮化硅、氧化硅、硅、锗、锗硅、铝、铜、钨、金、铂、镍、铬、钛钨合金、镍铬合金、镍铂合金或镍硅合金中的至少一种。具体地，第一加固结构161可为由介质或金属沉积的单层结构，也可为由两层、三层或更多层单层结构叠加形成的多层结构，非晶硅、非晶锗、非晶硅锗、非晶碳、碳化硅、氧化铝、氮化硅、碳氮化硅、硅、锗、锗硅、铝、铜、钨、金、铂、镍、铬、钛钨合金、镍铬合金、镍铂合金以及镍硅合金均不会被气相氟化氢、四氟化碳或三氟甲烷腐蚀，从而后续在利用气相氟化氢、四氟化碳或三氟甲烷腐蚀牺牲层以释放牺牲层的过程中，不会对第一加固结构161造成影响，从而确保设置第一加固结构161可增强梁结构11与第一柱状结构61连接处的力学强度，防止梁结构11与第一柱状结构6之间因连接不牢而发生脱落，从而提升红外探测器的结构稳定性。另外，当构成加固结构16的材料包括氧化硅时，由于氧化硅会被气相氟化氢、四氟化碳或三氟甲烷腐蚀，优选地可以设置加固结构16位于第一介质层13和第二介质层15围成的密闭空间内。
可选地，结合图6和图8，可以设置第二柱状结构62包括至少一层实心柱状结构，实心柱状结构包括实心结构605，图6和图8示例性地设置第二柱状结构62的实心结构605的侧壁包覆有至少一层介质层606且第二柱状结构62的实心结构605与一层介质层606接触设置，图6和图8示例性地设置第二柱状结构62的实心结构605的侧壁包覆有一层介质层606且第二柱状结构62的实心结构605与该介质层606接触设置，构成第二柱状结构62的实心结构605的材料包括钨、铜或铝中的至少一种，构成介质层606的材料可以包括氧化硅、氮化硅、碳化硅、非晶碳、氧化铝、氧化钛、氧化钒、非晶硅、非晶锗、非晶锗硅、非晶锗氧硅、硅、锗、锗硅、锗氧硅、石墨烯、铜或铂中的至少一种。
具体地，包覆第二柱状结构62的实心结构605的至少一层介质层606可以起到电绝缘的作用，利用介质层606保护第二柱状结构62的实心结构605以避免外部材料侵蚀第二柱状结构62的实心结构605的同时，介质层606可以作为第二柱状结构62的辅助支撑结构，当梁结构11位于吸收板10临近CMOS测量电路***1一侧时，介质层606与第二柱状结构62的实心结构605共同支撑吸收板10，有利于提高第二柱状结构62的力学稳定性，从而提高红外传感器的结构稳定性。另外，设置构成第一柱状结构62的介质层606的材料可以包括氧化硅、氮化硅、碳化 硅、非晶碳、氧化铝、氧化钛、氧化钒、非晶硅、非晶锗、非晶锗硅、非晶锗氧硅、硅、锗、锗硅、锗氧硅、石墨烯、铜或铂中的至少一种，前述材料均不会被气相氟化氢、四氟化碳或三氟甲烷腐蚀，因此在后续工艺步骤中利用气相氟化氢、四氟化碳和三氟甲烷腐蚀牺牲层时不会腐蚀包覆第二柱状结构62的实心结构605的介质层606。示例性地，可以如图6和图8所示，设置包覆第二柱状结构62的实心结构605的介质层606为吸收板10中的第三介质层130，包覆第二柱状结构62的实心结构605的介质层也可以是单独制作的介质层，或者也可以设置包覆第二柱状结构62的实心结构605的介质层为吸收板10中的第四介质层150或第二热敏感介质层120。
示例性地，也可以类比图23所示结构中的第一柱状结构61的设置方式，设置第二柱状结构62的实心结构605的侧壁与牺牲层接触设置，该牺牲层是对应的吸收板10，即与第二柱状结构62直接电连接的吸收板10与对应的梁结构11，即与第二柱状结构62直接电连接的梁结构11之间的牺牲层，即该牺牲层为对应第二柱状结构62的牺牲层，可以设置构成第二柱状结构62的实心结构605的材料包括钨、铜或铝中的至少一种，第二柱状结构62中的膜层以及第二柱状结构62的具体效果与图23所示的第一柱状结构61的效果类似，这里不再赘述。也可以类比图24所示结构中的第一柱状结构61的设置方式，设置第二柱状结构62的实心结构605的侧壁以及第二柱状结构62的实心结构605临近CMOS测量电路***1的表面包覆有至少一层粘附层，第二柱状结构62内最***的粘附层远离第二柱状结构62的实心结构605的侧壁包覆有介质层，构成第二柱状结构62的实心结构605的材料包括钨、铜或铝中的至少一种，构成第二柱状结构62内粘附层的材料包括钛、氮化钛、钽或氮化钽中的至少一种，构成第二柱状结构62内介质层的材料包括氧化硅、氮化硅、碳化硅、非晶碳、氧化铝、氧化钛、氧化钒、非晶硅、非晶锗、非晶锗硅、非晶锗氧硅、硅、锗、锗硅、锗氧硅、石墨烯、铜或铂中的至少一种，第二柱状结构62中的膜层以及第二柱状结构62的具体效果与图24所示的第一柱状结构61的效果类似，这里不再赘述。
同样地，可以类比图23、图24和图25所示结构中对应第一柱状结构61的第一加固结构161的设置方式，设置红外探测器还包括第二加固结构，第二加固结构对应第二柱状结构62所在位置设置且位于第二柱状结构62远离CMOS测量电路***1的一侧，梁结构11位于吸收板10临近CMOS测量电路***1的一侧，第二加固结构用于增强第二柱状结构62与吸收板10之间的连接稳固性，第二加固结构包括加重块状结构。
类比图25所示结构中对应第一柱状结构61的第一加固结构161的设置方式，可以设置构成第二加固结构的加重块状结构位于吸收板10远离CMOS测量电路***1的一侧且构成第二加固结构的加重块状结构与吸收板10接触设置，第二加固结构起到加固作用的原理与图25所示结构的第一加固结构161起到加固作用的原理类似，这里不再赘述。或者类比图23和图24所示结构中对应第一柱状结构61的第一加固结构161的设置方式，可以设置吸收板10对应第二柱状结构62所在位置形成有通孔，通孔露出至少部分第二柱状结构62，构成第二加固结构的加重块状结构包括填充通孔的第一部分和位于通孔外的第二部分，第二部分的正投影覆盖第一部分的正投影，第二加固结构起到加固作用的原理与图23和图24所示结构的第一加固结构161起到加固作用的原理类似，这里不再赘述。另外，构成第二加固结构的加重块状结构所采用的材料与构成第一加固结构161的加重块状结构所采用的材料可以相同，这里不再赘述。
可选地，结合图2和图8，可以设置第一柱状结构61包括至少一层空心柱状结构，图2和图8示例性地设置第一柱状结构61包括一层空心柱状结构，空心柱状结构内至少设置有第一电极层14，空心柱状结构内的第一电极层14与梁结构11中的第一电极层14、吸收板10中的第二电极层140以及支撑底座42电连接，以确保吸收板10生成的电信号传输至CMOS测量电路***1。图2和图8示例性地设置构成第一柱状结构61的空心柱状结构内设置有第一电极层14以及分别位于第一电极层14两侧的介质层，两侧的介质层实现了对第一电极层14的有效保护，避免第一电极层14被氧化或腐蚀，优化红外探测器的电传输特性。示例性地，第一柱状结构61内位于第一电极层14下方的介质层例如可以为梁结构11中的第一介质层13，位于第一电极层14上方的介质层例如可以为梁结构11中的第二介质层15，第一电极层14两侧的介质层也可以为单独制作的膜层。另外，也可以设置第一柱状结构61内，第一电极层14的上方和/或下方没有介质层，即可以设置空心柱状结构内仅第一电极层14的下方有介质层或者仅第一电极层14的上方有介质层或者空心柱状结构内仅设置有第一电极层14，第一电极层14外部没有介质层包裹。
图26为本发明实施例提供的另一种红外探测器像元的剖面结构示意图。图26仅示例性地示出了第一柱状结构61以及部分梁结构11，未示出梁结构11上方结构，如图26所示，红外探测器还可以包括第一加固结构162，第一加固结构162对应第一柱状结构61所在位置设置，第一柱状结构61为空心柱状结构时，第一加固结构162用于增强第一柱状结构61与梁结构11之间以及第一柱状结构61与反射层4之间的连接稳固性，即增强第一柱状结构61 与支撑底座42之间的连接稳固性。示例性地，对应空心的第一柱状结构62的第一加固结构162可以位于第一电极层14远离CMOS测量电路***1的一侧，当第一电极层14上方无介质层覆盖时，第一加固结构162位于第一电极层14上方且与第一电极层14接触设置，此时对应空心的第一柱状结构62的第一加固结构162可以在空心柱状结构内形成空心结构或者形成实心结构。当第一电极层14上方覆盖有介质层时，例如图26中第一电极层14上方覆盖有第二介质层15时，则对应空心的第一柱状结构62的第一加固结构162可以如图26所示位于第二介质层15上方且与第二介质层15接触设置，此时对应空心的第一柱状结构62的第一加固结构162可以在空心柱状结构内如图26所示形成空心结构，第一加固结构162也可以在空心柱状结构内形成实心结构，即第一加固结构162也可以填满第二介质层15环绕形成的内部空间。或者，也可以如图27所示，将第一加固结构162设置在第一电极层14上方且第一加固结构162与第一电极层14接触设置，即第一加固结构162位于第一电极层14与第二介质层15之间，此时第一加固结构162在空心柱状结构内形成空心结构。
图28为本发明实施例提供的另一种红外探测器像元的剖面结构示意图。图28同样仅示例性地示出了第一柱状结构61以及部分梁结构11，未示出梁结构11上方结构，如图28所示，也可以设置对应空心的第一柱状结构62的第一加固结构162位于第一电极层14临近CMOS测量电路***1的一侧，第一电极层14的下方设置有介质层，例如第一介质层13时，对应空心的第一柱状结构62的第一加固结构162可以位于第一电极层14与第一介质层13之间且第一加固结构162与第一电极层14接触设置。
结合图26、图27和图28，无论第一加固结构162位于第一电极层14远离CMOS测量电路***1的一侧，还是第一加固结构162位于第一电极层14临近CMOS测量电路***1的一侧，第一加固结构162均覆盖第一柱状结构61与梁结构11的连接位置，相当于在第一柱状结构61与梁结构11的连接位置处增加了负重块，进而利用第一加固结构162增强了第一柱状结构61与梁结构11之间的连接稳固性。另外，第一加固结构162还覆盖至少部分第一柱状结构61与支撑底座42的连接位置，相当于在第一柱状结构61与支撑底座42的连接位置处增加了负重块，进而利用对应空心的第一柱状结构62的第一加固结构162增强了第一柱状结构6与支撑底座42之间的连接稳固性，进而优化了整个红外探测器的电连接特性，优化了红外探测器的红外探测性能。示例性地，可以设置构成对应空心的第一柱状结构62的第一加固结构162的材料包括非晶硅、非晶锗、非晶硅锗、非晶碳、碳化硅、氧化铝、氮化硅、碳氮化硅、硅、锗、锗硅、铝、铜、钨、金、铂、镍、铬、钛钨合金、镍铬合金、镍铂合金或镍硅合金中的至少一种，上述实施例所述的对应空心的第一柱状结构62的第一加固结构162可以是金属结构也可以是非金属结构，本发明实施例对此不作具体限定，确保对应空心的第一柱状结构62的第一加固结构162的设置不会影响红外探测器中的电连接关系即可。
可选地，结合图2和图7，可以设置第二柱状结构62包括至少一层空心柱状结构，图2和图7示例性地设置第二柱状结构62包括一层空心柱状结构，空心柱状结构内至少设置有电极层，对于图2和图7所示的梁结构11位于吸收板10临近CMOS测量电路***1的一侧的情况，第二柱状结构62内至少设置有第二电极层140，对于类似图5所示的梁结构11位于吸收板10远离CMOS测量电路***1的一侧的情况，第二柱状结构62内至少设置有第一电极层14。图2和图7示例性地设置构成第二柱状结构62的空心柱状结构内设置有第二电极层140以及分别位于第二电极层140两侧的介质层，两侧的介质层实现了对第二电极层140的有效保护，避免第二电极层140被氧化或腐蚀，优化红外探测器的电传输特性。示例性地，第二柱状结构62内位于第二电极层140下方的介质层例如可以为吸收板10中的第三介质层130，位于第二电极层14上方的介质层例如可以为吸收板10中的第四介质层150，第二电极层140两侧的介质层也可以为单独制作的膜层。另外，也可以设置第二柱状结构62内，第二电极层140的上方和/或下方没有介质层，即可以设置空心柱状结构内仅第二电极层140的下方有介质层或者仅第二电极层140的上方有介质层或者空心柱状结构内仅设置有第二电极层140，第二电极层140外部没有介质层包裹。
可选地，可以类比图26、图27和图28所示结构中对应第一柱状结构61的第一加固结构162的设置方式，设置红外探测器还包括第二加固结构，第二加固结构对应第二柱状结构62所在位置设置，梁结构11位于吸收板10临近CMOS测量电路***1的一侧时，第二加固结构用于增强第二柱状结构62与吸收板10之间的连接稳固性，梁结构11类似图5位于吸收板10远离CMOS测量电路***1的一侧时，第二加固结构用于增强第二柱状结构62与吸收板10之间以及第二柱状结构62与梁结构11之间的连接稳固性。
可选地，对应空心的第二柱状结构62的第二加固结构可以位于所述电极层远离CMOS测量电路***1的一侧；或者，对应空心的第二柱状结构62的第二加固结构可以位于电极层临近CMOS测量电路***的一侧。类比图26所 示结构中对应第一柱状结构61的第一加固结构161的设置方式，当梁结构11位于吸收板10临近CMOS测量电路***1一侧时，可以设置构成对应空心的第二柱状结构62的第二加固结构位于第二电极层140远离CMOS测量电路***1的一侧，当第二电极层140上方无介质层覆盖时，对应空心的第二柱状结构62的第二加固结构位于第二电极层140上方且与第二电极层140接触设置，此时对应空心的第二柱状结构62的第二加固结构可以在空心柱状结构内形成空心结构或者形成实心结构。当第二电极层140上方覆盖有介质层时，例如图2中第二电极层140上方覆盖有第四介质层150时，则可以类似图26所示的第一加固结构161的设置方式，设置对应空心的第二柱状结构62的第二加固结构位于第四介质层150上方且与第四介质层150接触设置，此时对应空心的第二柱状结构62的第二加固结构可以在空心柱状结构内类似图26所示形成空心结构，对应空心的第二柱状结构62的第二加固结构也可以在空心柱状结构内形成实心结构，即对应空心的第二柱状结构62的第二加固结构也可以填满第四介质层150环绕形成的内部空间。
或者，也可以类比图27所示结构中对应第一柱状结构61的第一加固结构161的设置方式，将对应空心的第二柱状结构62的第二加固结构设置在第二电极层140上方且对应空心的第二柱状结构62的第二加固结构与第二电极层140接触设置，即对应空心的第二柱状结构62的第二加固结构位于第二电极层140与第四介质层150之间，此时对应空心的第二柱状结构62的第二加固结构在空心柱状结构内形成空心结构。
或者，也可以类比图28所示结构中对应第一柱状结构61的第一加固结构161的设置方式，将对应空心的第二柱状结构62的第二加固结构位于第二电极层140临近CMOS测量电路***1的一侧，第二电极层140的下方设置有介质层，例如第三介质层130时，对应空心的第二柱状结构62的第二加固结构可以位于第二电极层140与第三介质层130之间且对应空心的第二柱状结构62的第二加固结构与第二电极层140接触设置。另外，当类似图5所示梁结构11位于吸收板10远离CMOS测量电路***1的一侧，且第一柱状结构61或第二柱状结构62为空心柱状结构时，同样可以针对每一个柱状结构设置类似图26至图28所示的加固结构。
类比图26、图27和图28，无论对应空心的第二柱状结构62的第二加固结构位于第二电极层140远离CMOS测量电路***1的一侧，还是对应空心的第二柱状结构62的第二加固结构位于第二电极层140临近CMOS测量电路***1的一侧，对应空心的第二柱状结构62的第二加固结构均覆盖第二柱状结构62与吸收板10的连接位置，相当于在第二柱状结构62与吸收板10的连接位置处增加了负重块，进而利用对应空心的第二柱状结构62的第二加固结构增强了第二柱状结构62与吸收板10之间的连接稳固性。
示例性地，可以设置构成对应空心的第一柱状结构61的第一加固结构162的材料包括非晶硅、非晶锗、非晶硅锗、非晶碳、碳化硅、氧化铝、氮化硅、碳氮化硅、硅、锗、锗硅、铝、铜、钨、金、铂、镍、铬、钛钨合金、镍铬合金、镍铂合金或镍硅合金中的至少一种，构成对应空心的第二柱状结构62的第二加固结构的材料包括非晶硅、非晶锗、非晶硅锗、非晶碳、碳化硅、氧化铝、氮化硅、碳氮化硅、硅、锗、锗硅、铝、铜、钨、金、铂、镍、铬、钛钨合金、镍铬合金、镍铂合金或镍硅合金中的至少一种，上述实施例所述的对应空心的第一柱状结构61的第一加固结构162以及对应空心的第二柱状结构62的第二加固结构可以是金属结构也可以是非金属结构，本发明实施例对此不作具体限定，确保对应空心的第一柱状结构61的第一加固结构162以及对应空心的第二柱状结构62的第二加固结构的设置不会影响红外探测器中的电连接关系即可。
可选地，结合图1至图28，反射层4和悬空微桥结构40之间可以设置有至少一层图案化金属互连层，图案化金属互连层位于密闭释放隔绝层3的上方或者下方并与反射层4之间电绝缘，图案化金属互连层用于调节红外探测器的谐振模式。具体地，布拉格反射镜(Bragg reflector)是一种利用不同界面反射光的相长干涉对不同波长的光进行增强反射的光学器件，由多个1/4波长反射镜组成以实现对多个波长入射光的高效反射，本发明实施例设置反射层4和悬空微桥结构40之间设置有至少一层图案化金属互连层，至少一层图案化金属互连层、反射层4以及吸收板10形成类似布拉格反射镜的结构，至少一层图案化金属互连层的设置相当于改变了反射层4与吸收板10中热敏感介质层构成的整体谐振腔介质的厚度，使得红外探测器像元可以形成多个介质厚度不同的谐振腔，红外探测器像元可以选择不同波长的光进行增强反射调节，进而利用至少一层图案化金属互连层调节红外探测器的谐振模式，由此以提高红外探测器的红外吸收率，拓宽红外探测器的红外吸收谱段，增加红外探测器的红外吸收谱段。
示例性地，可以设置至少一层图案化金属互连层位于密闭释放隔绝层3远离CMOS测量电路***1的一侧和/或至少一层图案化金属互连层位于密闭释放隔绝层3临近CMOS测量电路***1的一侧。示例性地，可以设置图案化金属互连层包括多个阵列排布的金属重复单元，每个金属重复单元可以包括两个对角设置的L型图案化结构、 圆形结构、扇形结构、椭圆形结构、圆环结构、开口环结构或者多边形结构中的至少一种，也可以设置图案化金属互连层包括多个阵列排布的图案化镂空结构，图案化镂空结构可以包括圆形镂空结构、开口环状镂空结构或者多边形镂空结构中的至少一种，本发明实施例对图案化金属互连层所包含的具体图案不作限定。
图29为本发明实施例提供的另一种红外探测器像元的立体结构示意图，图30为图29所示结构的俯视结构示意图。图29仅示出了第一柱状结构61和梁结构11，未示出梁结构11上方的结构，结合图29和图30，可以设置梁结构11包括热对称结构，即由吸收板10或者说梁结构11的中间部分730向对应的第一柱状结构61的梁路径中，交汇于同一节点的两条并行梁结构分别为第一半桥结构710和第二半桥结构720，第一半桥结构710和第二半桥结构720构成热对称结构70。
红外探测器的热量从吸收板10或者说梁结构11的中间部分730向连接同一梁结构11的两个第一柱状结构61传导，第一半桥结构710可以包括支撑层、电极层和钝化层，例如包括第一介质层13、第一电极层14和第二介质层15，第二半桥结构720可以包括第一介质层13和/或第二介质层15，即第一半桥结构710的厚度大于第二半桥结构720的厚度，在第一半桥结构710和第二半桥结构720长度相等的情况下，第一半桥结构710由于其厚度较大，相较于第二半桥结构720，其上的热量传导速度更快。本发明实施例对第一半桥结构710和第二半桥结构720的长度进行不对称设计，即设置第一半桥结构710的长度大于第二半桥结构720的长度，减缓了厚度因素导致的热量传导速度较快的第一半桥结构710上的热量传导速度，进而实现了热对称结构70中的第一半桥结构710与第二半桥结构720的热导非平衡差值小于等于20％，即热对称结构70中的第一半桥结构710与第二半桥结构720的热量传导速度的差距小于等于20％，优选地，可以实现热对称结构70中的第一半桥结构710与第二半桥结构720的热导相同，进一步降低了红外探测器的总热导，进而提高了红外探测器的红外探测性能，且减小了红外探测器在相同力的作用下受到的应力和形变，提高了红外探测器的稳定性和抗冲击能力，增强了红外探测器的力学强度。
具体地，结合图29和图30，并行梁结构a和并行梁结构b交汇于同一节点A,并行梁结构c和并行梁结构d交汇于节点B和节点C，并行梁结构e和并行梁结构f交汇于同一节点D。另外，热对称结构70中的第一半桥结构710的长度大于第二半桥结构720的长度，因此，并行梁结构a为第一半桥结构710，并行梁结构b为第二半桥结构720，二者构成一个热对称结构70，并行梁结构c为第一半桥结构710，并行梁结构d为第二半桥结构720，二者构成一个热对称结构70，并行梁结构e为第一半桥结构710，并行梁结构f为第二半桥结构720，二者构成一个热对称结构70。
可选地，结合图2、图5、图6、图7、图8、图12和图15，悬空微桥结构40包括第一介质层13和第二介质层15时，可以设置相对设置的梁结构11之间的第一介质层13和/或第二介质层15形成图案化膜层结构，这里相对设置的梁结构11即位于图1中左右两侧的梁结构11或者位于图1中上下两侧的梁结构11，图案化膜层结构包括多个条状图案，图案化膜层结构中的条状图案相对于梁结构11对称设置。
以第一介质层13为例，图31为本发明实施例提供的一种第一介质层的俯视结构示意图。结合图1至图31，可以设置相对设置的梁结构11之间的第一介质层13形成如图31所示的图案化膜层结构90，图案化膜层结构90即位于图2中的A1区域，图案化膜层结构90包括多个条状图案91，图案化膜层结构90中的条状图案91相对于梁结构11对称设置，即图案化膜层结构90中的条状图案91相对于图31中左右两侧的梁结构11对称设置。由此，通过设置相对设置的梁结构之11间的第一介质层13和/或第二介质层15形成图案化膜层结构90，图案化膜层结构90包括多个条状图案91，图案化膜层结构90中的条状图案91相对于梁结构11对称设置，有效提高了图案化膜层结构90的力学稳定性，进而有利于提高整个红外探测器的力学稳定性。
另外需要说明的是，本发明实施例所述的图案化膜层结构90中的图案不限于图31所示图案形式，例如图案化膜层结构90还可以包括更多条状图案以形成网格状结构等等，本发明实施例对图案化膜层结构90中的具体图案不作限定，确保图案化膜层结构90中的条状图案相对于梁结构11对称即可，且第一介质层13和第二介质层15形成的图案化膜层结构90中的图案可以相同也可以不同。
可选地，可以设置红外探测器是基于3nm、7nm、10nm、14nm、22nm、28nm、32nm、45nm、65nm、90nm、130nm、150nm、180nm、250nm或350nm CMOS工艺制程，前述尺寸表征集成电路的工艺节点，即表征集成电路加工过程中的特征尺寸。
可选地，可以设置构成红外探测器中的金属互连层的金属连线材料包括铝、铜、钨、钛、镍、铬、铂、银、钌或钴中的至少一种，例如可以设置构成反射层4的材料包括铝、铜、钨、钛、镍、铬、铂、银、钌或钴中的至少一 种。另外，设置CMOS测量电路***1和CMOS红外传感结构2均使用CMOS工艺制备，在CMOS测量电路***1上直接制备CMOS红外传感结构2，能够实现第一柱状结构61以及第二柱状结构62的径向边长大于等于0.5um，小于等于3um，梁结构11的宽度，即梁结构11中单线条的宽度小于等于0.3um，谐振腔的高度小于等于2.5um。
另外需要说明的是，本发明实施例并没有给出属于本发明实施例保护范围的所有结构红外探测器的示意图，并非对本发明实施例保护范围的限定，本发明实施例公开的不同特征之间可以任意组合，例如无论红外探测器中是否有第一加固结构和/或第二加固结构，均属于本发明实施例的保护范围，不同结构的第一柱状结构和第二柱状结构的任意组合也属于本发明实施例的保护范围。
需要说明的是，在本文中，诸如“第一”和“第二”等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括要素的过程、方法、物品或者设备中还存在另外的相同要素。
以上仅是本发明的具体实施方式，使本领域技术人员能够理解或实现本发明。对这些实施例的多种修改对本领域的技术人员来说将是显而易见的，本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下，在其它实施例中实现。因此，本发明将不会被限制于本文的这些实施例，而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。
工业实用性
本发明适用于红外探测器，利用CMOS工艺实现了CMOS测量电路***和CMOS红外传感结构在CMOS生产线上一体化制备，不存在工艺兼容问题，解决了MEMS工艺面临的技术难点，制备工艺简单且易于控制，可实现牺牲层多层工艺设计，有利于提到膜层平坦化程度，可实现芯片高良品率、低成本、高产能且大规模集成化生产的目标，使得红外探测器的探测灵敏度更高、探测距离更远以及探测性能更好，更利于实现芯片小型化，产品的一致性更好，具有很强的工业实用性。

Claims (12)

  1. 一种基于CMOS工艺的多层结构的红外探测器，其特征在于，包括：
    CMOS测量电路***和CMOS红外传感结构，所述CMOS测量电路***和所述CMOS红外传感结构均使用CMOS工艺制备，在所述CMOS测量电路***上直接制备所述CMOS红外传感结构；
    所述CMOS测量电路***上方包括至少一层密闭释放隔绝层，所述密闭释放隔绝层用于在制作所述CMOS红外传感结构的释放刻蚀过程中，保护所述CMOS测量电路***不受工艺影响；
    所述CMOS红外传感结构的CMOS制作工艺包括金属互连工艺、通孔工艺、IMD工艺以及RDL工艺，所述CMOS红外传感结构包括至少三层金属互连层、至少三层介质层和多个互连通孔，所述金属互连层至少包括反射层和两层电极层，所述介质层至少包括两层牺牲层和热敏感介质层；其中，所述热敏感介质层用于将其吸收的红外辐射对应的温度变化转化为电阻变化，进而通过所述CMOS测量电路***将红外目标信号转化成可实现电读出的信号；
    所述CMOS红外传感结构包括由所述反射层和所述热敏感介质层构成的谐振腔以及控制热传递的悬空微桥结构，所述悬空微桥结构包括至少一层梁结构和至少一层吸收板，所述梁结构位于所述吸收板临近或者远离所述CMOS测量电路***的一侧，所述反射层和所述梁结构之间设置有第一柱状结构且所述第一柱状结构直接电连接所述反射层中的支撑底座和对应的所述梁结构，所述梁结构通过所述第一柱状结构和所述支撑底座与所述CMOS测量电路***电连接，所述吸收板与所述梁结构之间设置有第二柱状结构且所述第二柱状结构直接电连接对应的所述吸收板和对应的所述梁结构，所述吸收板用于将红外信号转换为电信号并通过所述第二柱状结构和对应的所述梁结构与对应的所述第一柱状结构电连接；
    所述第一柱状结构包括至少一层实心柱状结构和/或至少一层空心柱状结构，所述第二柱状结构包括至少一层实心柱状结构和/或至少一层空心柱状结构；
    所述吸收板上形成有至少一个孔状结构，所述孔状结构至少贯穿所述吸收板中的介质层；和/或，所述梁结构上形成有至少一个孔状结构；
    所述CMOS测量电路***用于测量和处理一个或多个所述CMOS红外传感结构形成的阵列电阻值，并将红外信号转化为图像电信号；所述CMOS测量电路***包括偏压产生电路、列级模拟前端电路和行级电路，所述偏压产生电路的输入端连接所述行级电路的输出端，所述列级模拟前端电路的输入端连接所述偏压产生电路的输出端，所述行级电路中包括行级镜像像元和行选开关，所述列级模拟前端电路中包括盲像元；其中，所述行级电路分布在每个像素内并根据时序产生电路的行选通信号选取待处理信号，并在所述偏压产生电路的作用下输出电流信号至所述列级模拟前端电路以进行电流电压转换输出；
    所述行级电路受所述行选开关控制而被选通时向所述偏压产生电路输出第三偏置电压，所述偏压产生电路根据输入的恒压及所述第三偏置电压输出第一偏置电压和第二偏置电压，所述列级模拟前端电路根据所述第一偏置电压和所述第二偏置电压得到两路电流，并对所产生的两路电流之差进行跨阻放大并作为输出电压输出。
  2. 根据权利要求1所述的基于CMOS工艺的多层结构的红外探测器，其特征在于，在所述CMOS测量电路***的金属互连层上层或者同层制备所述CMOS红外传感结构。
  3. 根据权利要求1所述的基于CMOS工艺的多层结构的红外探测器，其特征在于，所述牺牲层用于使所述CMOS红外传感结构形成镂空结构，构成所述牺牲层的材料是氧化硅，采用post-CMOS工艺腐蚀所述牺牲层。
  4. 根据权利要求1所述的基于CMOS工艺的多层结构的红外探测器，其特征在于，所述反射层用于反射红外信号并与所述热敏感介质层形成所述谐振腔，所述反射层包括至少一层金属互连层，所述第一柱状结构采用所述金属互连工艺和所述通孔工艺连接对应的所述梁结构和所述CMOS测量电路***，所述第二柱状结构采用所述金属互连工艺和所述通孔工艺连接对应的所述吸收板与对应的所述梁结构；
    所述梁结构包括第一电极层，或者所述梁结构包括第一介质层和第一电极层，或者所述梁结构包括第一电极层和第二介质层，或者所述梁结构包括第一电极层和第一热敏感介质层，或者所述梁结构包括第一介质层、第一电极层和第二介质层，或者所述梁结构包括第一介质层、第一电极层和第一热敏感介质层，或者所述梁结构包括第一电极层、第一热敏感介质层和第二介质层，或者所述梁结构包括第一介质层、第一电极层、第一热敏感介质层和第二 介质层，所述吸收板包括第二电极层和第二热敏感介质层，或者所述吸收板包括第三介质层、第二电极层和第二热敏感介质层，或者所述吸收板包括第二电极层、第二热敏感介质层和第四介质层，或者所述吸收板包括第三介质层、第二电极层、第二热敏感介质层和第四介质层；其中，构成所述第一介质层的材料包括非晶硅、非晶锗、非晶锗硅、氧化铝或非晶碳中的至少一种，构成所述第二介质层的材料包括非晶硅、非晶锗、非晶锗硅、氧化铝或非晶碳中的至少一种，构成所述第三介质层的材料包括非晶硅、非晶锗、非晶锗硅、氧化铝或非晶碳中的至少一种，构成所述第四介质层的材料包括非晶硅、非晶锗、非晶锗硅、氧化铝或非晶碳中的至少一种，构成所述第一热敏感介质层的材料包括由氧化钛、氧化钒、非晶硅、非晶锗、非晶锗硅、非晶锗氧硅、硅、锗、锗硅、锗氧硅、石墨烯、钛酸锶钡薄膜、铜或铂制备的电阻温度系数大于设定值的材料中的至少一种，构成所述第二热敏感介质层的材料包括由氧化钛、氧化钒、非晶硅、非晶锗、非晶锗硅、非晶锗氧硅、硅、锗、锗硅、锗氧硅、石墨烯、钛酸锶钡薄膜、铜或铂制备的电阻温度系数大于设定值的材料中的至少一种；或者，
    所述梁结构包括第一介质层、第一电极层和第二介质层，所述吸收板包括第三介质层和第二电极层，或者所述吸收板包括第二电极层和第四介质层，或者所述吸收板包括第三介质层、第二电极层和第四介质层，或者所述吸收板包括支撑层、第三介质层、第二电极层和第四介质层，或者所述吸收板包括第三介质层、第二电极层、第四介质层和钝化层，或者所述吸收板包括支撑层、第三介质层、第二电极层、第四介质层和钝化层；其中，构成所述第一介质层的材料包括由非晶硅、非晶锗、非晶锗硅或非晶碳制备的电阻温度系数大于设定值的材料中的至少一种，构成所述第二介质层的材料包括由非晶硅、非晶锗、非晶锗硅或非晶碳制备的电阻温度系数大于设定值的材料中的至少一种，构成所述第三介质层的材料包括由非晶硅、非晶锗、非晶锗硅或非晶碳制备的电阻温度系数大于设定值的材料中的至少一种，构成所述第四介质层的材料包括由非晶硅、非晶锗、非晶锗硅或非晶碳制备的电阻温度系数大于设定值的材料中的至少一种；
    构成所述第一电极层的材料包括钛、氮化钛、钽、氮化钽、钛钨合金、镍铬合金、镍铂合金、镍硅合金、镍、铬、铂、钨、铝或铜中的至少一种，构成所述第二电极层的材料包括钛、氮化钛、钽、氮化钽、钛钨合金、镍铬合金、镍铂合金、镍硅合金、镍、铬、铂、钨、铝或铜中的至少一种。
  5. 根据权利要求4所述的基于CMOS工艺的多层结构的红外探测器，其特征在于，所述反射层和所述悬空微桥结构之间设置有至少一层图案化金属互连层，所述图案化金属互连层位于所述密闭释放隔绝层的上方或者下方并与所述反射层之间电绝缘，所述图案化金属互连层用于调节所述红外探测器的谐振模式；
    所述悬空微桥结构包括第三介质层和第四介质层，所述红外探测器还包括超材料结构和/或偏振结构，所述超材料结构或者所述偏振结构为所述第三介质层临近所述CMOS测量电路***一侧的至少一层金属互连层，或者所述第四介质层远离所述CMOS测量电路***一侧的至少一层金属互连层，或者所述第三介质层和所述第四介质层中间的且与所述第二电极层电绝缘的至少一层金属互连层，或者，所述第二电极层作为超材料结构层或者偏振结构层。
  6. 根据权利要求4所述的基于CMOS工艺的多层结构的红外探测器，其特征在于，所述第一柱状结构包括至少一层空心柱状结构，所述空心柱状结构内至少设置有所述第一电极层；
    所述红外探测器还包括第一加固结构，所述第一加固结构对应所述第一柱状结构所在位置设置，所述第一加固结构用于增强所述第一柱状结构与所述梁结构之间以及所述第一柱状结构与所述反射层之间的连接稳固性；
    所述第一加固结构位于所述第一电极层远离所述CMOS测量电路***的一侧；或者，所述第一加固结构位于所述第一电极层临近所述CMOS测量电路***的一侧。
  7. 根据权利要求4所述的基于CMOS工艺的多层结构的红外探测器，其特征在于，所述第二柱状结构包括至少一层空心柱状结构，所述空心柱状结构内至少设置有电极层；
    所述红外探测器还包括第二加固结构，所述第二加固结构对应所述第二柱状结构所在位置设置，所述第二加固结构用于增强所述第二柱状结构与所述吸收板之间的连接稳固性；
    所述第二加固结构位于电极层远离所述CMOS测量电路***的一侧；或者，所述第二加固结构位于电极层临近所述CMOS测量电路***的一侧。
  8. 根据权利要求1所述的基于CMOS工艺的多层结构的红外探测器，其特征在于，所述第一柱状结构包括至少一层实心柱状结构，所述实心柱状结构包括实心结构；
    所述实心结构的侧壁与对应的所述梁结构和所述CMOS测量电路***之间的牺牲层接触设置，构成所述实心结构的材料包括钨、铜或铝中的至少一种；或者，
    所述实心结构的侧壁包覆有至少一层介质层且所述实心结构与一层所述介质层接触设置，构成所述实心结构的材料包括钨、铜或铝中的至少一种，构成所述介质层的材料包括氧化硅、氮化硅、碳化硅、非晶碳、氧化铝、氧化钛、氧化钒、非晶硅、非晶锗、非晶锗硅、非晶锗氧硅、硅、锗、锗硅、锗氧硅、石墨烯、铜或铂中的至少一种；或者，
    所述实心结构的侧壁以及所述实心结构临近所述CMOS测量电路***的表面包覆有至少一层粘附层，所述第一柱状结构内最***的所述粘附层远离所述实心结构的侧壁包覆有介质层，构成所述实心结构的材料包括钨、铜或铝中的至少一种，构成所述粘附层的材料包括钛、氮化钛、钽或氮化钽中的至少一种，构成所述介质层的材料包括氧化硅、氮化硅、碳化硅、非晶碳、氧化铝、氧化钛、氧化钒、非晶硅、非晶锗、非晶锗硅、非晶锗氧硅、硅、锗、锗硅、锗氧硅、石墨烯、铜或铂中的至少一种；
    所述红外探测器还包括第一加固结构，所述第一加固结构对应所述第一柱状结构所在位置设置且位于所述第一柱状结构远离所述CMOS测量电路***的一侧，所述第一加固结构用于增强所述第一柱状结构与所述梁结构之间的连接稳固性，所述第一加固结构包括加重块状结构；
    所述加重块状结构位于所述梁结构远离所述CMOS测量电路***的一侧且所述加重块状结构与所述梁结构接触设置；或者，所述梁结构对应所述第一柱状结构所在位置形成有通孔，所述通孔露出至少部分所述第一柱状结构，所述加重块状结构包括填充所述通孔的第一部分和位于所述通孔外的第二部分，所述第二部分的正投影覆盖所述第一部分的正投影。
  9. 根据权利要求1所述的基于CMOS工艺的多层结构的红外探测器，其特征在于，所述第二柱状结构包括至少一层实心柱状结构，所述实心柱状结构包括实心结构；
    所述实心结构的侧壁与对应的所述梁结构和对应的所述吸收板之间的牺牲层接触设置，构成所述实心结构的材料包括钨、铜或铝中的至少一种；或者，
    所述实心结构的侧壁包覆有至少一层介质层且所述实心结构与一层所述介质层接触设置，构成所述实心结构的材料包括钨、铜或铝中的至少一种，构成所述介质层的材料包括氧化硅、氮化硅、碳化硅、非晶碳、氧化铝、氧化钛、氧化钒、非晶硅、非晶锗、非晶锗硅、非晶锗氧硅、硅、锗、锗硅、锗氧硅、石墨烯、铜或铂中的至少一种；或者，
    所述实心结构的侧壁以及所述实心结构临近所述CMOS测量电路***的表面包覆有至少一层粘附层，所述第二柱状结构内最***的所述粘附层远离所述实心结构的侧壁包覆有介质层，构成所述实心结构的材料包括钨、铜或铝中的至少一种，构成所述粘附层的材料包括钛、氮化钛、钽或氮化钽中的至少一种，构成所述介质层的材料包括氧化硅、氮化硅、碳化硅、非晶碳、氧化铝、氧化钛、氧化钒、非晶硅、非晶锗、非晶锗硅、非晶锗氧硅、硅、锗、锗硅、锗氧硅、石墨烯、铜或铂中的至少一种；
    所述红外探测器还包括第二加固结构，所述第二加固结构对应所述第二柱状结构所在位置设置且位于所述第二柱状结构远离所述CMOS测量电路***的一侧，所述梁结构位于所述吸收板临近所述CMOS测量电路***的一侧，所述第二加固结构用于增强所述第二柱状结构与所述吸收板之间的连接稳固性，所述第二加固结构包括加重块状结构；
    所述加重块状结构位于所述吸收板远离所述CMOS测量电路***的一侧且所述加重块状结构与所述吸收板接触设置；或者，所述吸收板对应所述第二柱状结构所在位置形成有通孔，所述通孔露出至少部分所述第二柱状结构，所述加重块状结构包括填充所述通孔的第一部分和位于所述通孔外的第二部分，所述第二部分的正投影覆盖所述第一部分的正投影。
  10. 根据权利要求4所述的基于CMOS工艺的多层结构的红外探测器，其特征在于，所述梁结构包括热对称结构；
    所述悬空微桥结构包括第一介质层和第二介质层，相对设置的所述梁结构之间的所述第一介质层或和/或所述第二介质层形成图案化膜层结构，所述图案化膜层结构包括多个条状图案，所述条状图案相对于所述梁结构对称设置。
  11. 根据权利要求1所述的基于CMOS工艺的多层结构的红外探测器，其特征在于，所述密闭释放隔绝层位于所述CMOS测量电路***和所述CMOS红外传感结构之间的界面和/或位于所述CMOS红外传感结构中；
    所述密闭释放隔绝层至少包含一层介质层，构成所述密闭释放隔绝层的介质材料包括碳化硅、碳氮化硅、氮化 硅、非晶硅、非晶锗、非晶锗硅、硅、锗、锗硅、非晶碳或氧化铝中的至少一种。
  12. 根据权利要求1所述的基于CMOS工艺的多层结构的红外探测器，其特征在于，所述红外探测器是基于3nm、7nm、10nm、14nm、22nm、28nm、32nm、45nm、65nm、90nm、130nm、150nm、180nm、250nm或350nm CMOS工艺制程；
    构成所述金属互连层的金属连线材料包括铝、铜、钨、钛、镍、铬、铂、银、钌或钴中的至少一种。
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CN113432725B (zh) * 2021-06-25 2022-10-11 北京北方高业科技有限公司 一种基于cmos工艺的多层结构的红外探测器
CN113932927B (zh) * 2021-10-13 2023-01-06 北京北方高业科技有限公司 基于cmos工艺的红外探测器的制备方法及红外探测器
CN113932926B (zh) * 2021-10-13 2023-02-28 北京北方高业科技有限公司 一种非制冷红外探测器的制备方法及非制冷红外探测器
CN113945286B (zh) * 2021-10-13 2023-01-10 北京北方高业科技有限公司 具有实心柱的cmos红外探测器的制备方法及红外探测器
CN113639879A (zh) * 2021-10-13 2021-11-12 北京北方高业科技有限公司 多层结构红外微桥探测器的制备方法及红外微桥探测器
CN116230725B (zh) * 2023-05-06 2023-12-01 北京北方高业科技有限公司 基于cmos工艺的红外探测器盲像元和红外探测器
CN116207111B (zh) * 2023-05-06 2024-01-30 北京北方高业科技有限公司 基于cmos工艺的红外探测器盲像元和红外探测器

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106352989A (zh) * 2016-08-18 2017-01-25 烟台睿创微纳技术股份有限公司 一种非制冷红外焦平面探测器微桥的制作方法和结构
CN110006538A (zh) * 2019-03-20 2019-07-12 北京安酷智芯科技有限公司 一种无tec非制冷红外焦平面阵列读出电路
CN111525023A (zh) * 2020-07-06 2020-08-11 北京北方高业科技有限公司 红外探测器及其制备方法
WO2020242384A1 (en) * 2019-05-30 2020-12-03 Meridian Innovation Pte Ltd Metamaterials-based focusing lenses for thermal imaging
CN113432725A (zh) * 2021-06-25 2021-09-24 北京北方高业科技有限公司 一种基于cmos工艺的多层结构的红外探测器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101927976B (zh) * 2009-09-30 2013-09-25 浙江大立科技股份有限公司 微桥结构红外探测器以及制造方法
CN102983145B (zh) * 2012-12-07 2015-07-08 上海丽恒光微电子科技有限公司 红外图像传感器及其形成方法
CN203269550U (zh) * 2013-02-04 2013-11-06 烟台睿创微纳技术有限公司 一种非制冷红外探测器塔式桥墩
CN104792420A (zh) * 2014-01-22 2015-07-22 北京大学 光读出式焦平面阵列及其制备方法
CN108225576B (zh) * 2017-12-14 2021-03-02 上海集成电路研发中心有限公司 一种红外探测器及其制造方法
CN108917942B (zh) * 2018-09-26 2020-09-11 烟台睿创微纳技术股份有限公司 一种非制冷红外探测器及其制备方法
CN109256401A (zh) * 2018-10-31 2019-01-22 南京方旭智芯微电子科技有限公司 一种微桥结构、微电子器件及微桥结构的制作方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106352989A (zh) * 2016-08-18 2017-01-25 烟台睿创微纳技术股份有限公司 一种非制冷红外焦平面探测器微桥的制作方法和结构
CN110006538A (zh) * 2019-03-20 2019-07-12 北京安酷智芯科技有限公司 一种无tec非制冷红外焦平面阵列读出电路
WO2020242384A1 (en) * 2019-05-30 2020-12-03 Meridian Innovation Pte Ltd Metamaterials-based focusing lenses for thermal imaging
CN111525023A (zh) * 2020-07-06 2020-08-11 北京北方高业科技有限公司 红外探测器及其制备方法
CN113432725A (zh) * 2021-06-25 2021-09-24 北京北方高业科技有限公司 一种基于cmos工艺的多层结构的红外探测器

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SHEN, NING: "Study on the Microbolometer in a Standard CMOS Technology", CHINA DOCTORAL DISSERTATIONS FULL-TEXT DATABASE(ELECTRONIC JOURNAL), INFORMATION & TECHNOLOGY, 1 July 2015 (2015-07-01), pages 1 - 151, XP093017313, [retrieved on 20230124] *

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