WO2022245021A1 - 박막 증착 방법 - Google Patents
박막 증착 방법 Download PDFInfo
- Publication number
- WO2022245021A1 WO2022245021A1 PCT/KR2022/006409 KR2022006409W WO2022245021A1 WO 2022245021 A1 WO2022245021 A1 WO 2022245021A1 KR 2022006409 W KR2022006409 W KR 2022006409W WO 2022245021 A1 WO2022245021 A1 WO 2022245021A1
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- WO
- WIPO (PCT)
- Prior art keywords
- gas
- substrate
- gate insulating
- silicon carbide
- insulating film
- Prior art date
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- 238000007736 thin film deposition technique Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 162
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 77
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 73
- 238000000034 method Methods 0.000 claims abstract description 40
- 239000004065 semiconductor Substances 0.000 claims abstract description 31
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims description 149
- 239000010408 film Substances 0.000 claims description 60
- 239000004215 Carbon black (E152) Substances 0.000 claims description 40
- 229930195733 hydrocarbon Natural products 0.000 claims description 40
- 150000002430 hydrocarbons Chemical class 0.000 claims description 40
- 238000012805 post-processing Methods 0.000 claims description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 238000007781 pre-processing Methods 0.000 claims description 4
- 238000005507 spraying Methods 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 60
- 239000010409 thin film Substances 0.000 description 20
- 239000012495 reaction gas Substances 0.000 description 19
- 238000000151 deposition Methods 0.000 description 14
- 239000002994 raw material Substances 0.000 description 14
- 239000001257 hydrogen Substances 0.000 description 13
- 229910052739 hydrogen Inorganic materials 0.000 description 13
- 238000010926 purge Methods 0.000 description 12
- 230000008021 deposition Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 239000010936 titanium Substances 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 150000002431 hydrogen Chemical class 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 230000003213 activating effect Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- -1 region Substances 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 238000004381 surface treatment Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910015801 BaSrTiO Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910004129 HfSiO Inorganic materials 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- ILCYGSITMBHYNK-UHFFFAOYSA-N [Si]=O.[Hf] Chemical compound [Si]=O.[Hf] ILCYGSITMBHYNK-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- VKJLWXGJGDEGSO-UHFFFAOYSA-N barium(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[Ti+4].[Ba+2] VKJLWXGJGDEGSO-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- KJXBRHIPHIVJCS-UHFFFAOYSA-N oxo(oxoalumanyloxy)lanthanum Chemical compound O=[Al]O[La]=O KJXBRHIPHIVJCS-UHFFFAOYSA-N 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- PWYYWQHXAPXYMF-UHFFFAOYSA-N strontium(2+) Chemical compound [Sr+2] PWYYWQHXAPXYMF-UHFFFAOYSA-N 0.000 description 2
- CZXRMHUWVGPWRM-UHFFFAOYSA-N strontium;barium(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Sr+2].[Ba+2] CZXRMHUWVGPWRM-UHFFFAOYSA-N 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
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- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
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Definitions
- the present invention relates to a thin film deposition method, and more particularly, to a thin film deposition method for forming a gate insulating film on a silicon carbide substrate.
- Silicon carbide is a semiconductor with a higher band gap than that of general silicon, and has a higher breakdown voltage than silicon, while exhibiting low loss and excellent heat dissipation.
- the dielectric breakdown field is about 10 times superior to that of silicon, there is a great advantage in that voltage drop can be reduced to about 1/200 compared to semiconductor devices using silicon. Accordingly, silicon carbide is regarded as a promising semiconductor material that can replace silicon in the field of display devices or power semiconductor devices.
- a transistor is used as a switching circuit in a display device or a semiconductor device.
- Such a transistor has a gate insulating film for blocking current between a source and a drain.
- a gate insulating film formed on a silicon carbide substrate was deposited at a high temperature of about 1200°C.
- the present invention provides a thin film deposition method capable of forming a gate insulating film on a silicon carbide substrate at a low temperature.
- a thin film deposition method includes preparing a silicon carbide substrate having a plurality of semiconductor regions; and forming a gate insulating film on the silicon carbide substrate by an atomic layer deposition process at a temperature of 100 to 400 °C.
- the method may further include surface treating the silicon carbide substrate with plasma before forming the gate insulating layer.
- Forming the gate insulating film may include supplying source gas onto the hydrocarbon substrate; pre-treating the hydrocarbon substrate with plasma; supplying a reactive gas onto the hydrocarbon substrate; and post-processing the hydrocarbon substrate with plasma, wherein the process cycle including supplying the raw material gas, pre-processing, supplying a reactive gas, and post-processing may be performed a plurality of times. have.
- the pre-processing and post-processing may include spraying hydrogen gas onto the hydrocarbon substrate; and generating plasma on the hydrocarbon substrate by discharging the hydrogen gas.
- the gate insulating layer may include a high-K dielectric layer.
- the gate insulating layer may further include a silicon oxide layer or a silicon nitride layer provided on at least one of upper and lower portions of the high-K dielectric layer.
- a silicon carbide substrate having a source region, a well region, and a drain region may be prepared, and in the forming of the gate insulating layer, a gate insulating layer may be formed on the well region.
- a gate insulating film may be formed on a silicon carbide substrate using a low-temperature process.
- a display device or a power semiconductor device having a high breakdown voltage and excellent heat dissipation can be manufactured.
- FIG. 1 is a diagram schematically illustrating a deposition apparatus according to an embodiment of the present invention
- FIG. 2 is a view schematically showing a thin film deposition method according to an embodiment of the present invention.
- FIG. 3 is a view for explaining a process cycle of forming a gate insulating film according to an embodiment of the present invention
- FIG. 4 is a view showing an example of a thin film transistor manufactured according to an embodiment of the present invention.
- FIG. 5 is a view showing an example of a power semiconductor device manufactured according to an embodiment of the present invention.
- FIG. 1 is a diagram schematically illustrating a deposition apparatus according to an embodiment of the present invention.
- a deposition apparatus is an apparatus for depositing a thin film, that is, a gate insulating film on a silicon carbide substrate, and is provided in a chamber 10 and the chamber 10, and the chamber ( 10) a substrate support part 20 for supporting a substrate provided therein, a gas disposed in the chamber 10 to face the substrate support part 20 and injecting a process gas toward the substrate support part 20; It includes a dispensing unit 30 and an RF power supply 50 for applying power to generate plasma in the chamber 10 .
- the deposition apparatus may further include a gas supply unit 40 for supplying gas to the gas dispensing unit 30, and may further include a controller (not shown) for controlling the RF power supply 50. have.
- a first gas supply path for supplying a first gas for example, a raw material gas
- a second gas supply path for supplying a second gas for example, a reaction gas
- the chamber 10 prepares a predetermined process space and keeps it airtight.
- the chamber 10 includes a body 12 having a predetermined process space including a substantially circular or quadrangular flat surface and a sidewall portion extending upward from the flat surface, and a substantially circular or quadrangular body 12 positioned on the chamber ( 10) may include a cover 14 to keep it airtight.
- the chamber 10 is not limited thereto and may be manufactured in various shapes corresponding to the shape of the substrate.
- An exhaust port may be formed in a predetermined area of the lower surface of the chamber 10 , and an exhaust pipe (not shown) connected to the exhaust port may be provided outside the chamber 10 .
- the exhaust pipe may be connected to an exhaust device (not shown).
- a vacuum pump such as a turbo molecular pump may be used. Therefore, the inside of the chamber 10 can be vacuumed up to a predetermined reduced pressure atmosphere, for example, a predetermined pressure of 0.1 mTorr or less by the exhaust device.
- the exhaust pipe may be installed not only on the lower surface of the chamber 10 but also on the side surface of the chamber 10 under the substrate support 20 to be described later.
- a plurality of exhaust pipes and corresponding exhaust devices may be further installed to reduce the exhausting time.
- a substrate provided into the chamber 10 may be seated on the substrate support 20 for a thin film forming process.
- the substrate may include a silicon carbide substrate containing silicon carbide (SiC) as a main component.
- the substrate may include a silicon carbide single crystal wafer, and may include a silicon carbide single crystal wafer in which a plurality of semiconductor regions are formed by implanting a dopant into the silicon carbide single crystal wafer.
- the plurality of semiconductor regions may include a source region, a drain region, and a well region.
- the substrate support 20 may be provided with, for example, an electrostatic chuck so that such a substrate may be seated and supported, and may adsorb and hold the substrate by electrostatic force, or may support the substrate by vacuum adsorption or mechanical force.
- the substrate support 20 may be provided in a shape corresponding to the shape of the substrate, for example, circular or rectangular.
- the substrate support unit 20 may include a substrate support on which a substrate is seated and an elevator 22 disposed under the substrate support to move the substrate support up and down.
- the substrate support may be manufactured to be larger than the substrate, and the elevator 22 is provided to support at least one region of the substrate support, for example, the center, and when the substrate is seated on the substrate support, the substrate support is moved to a gas injection unit ( 30) can be moved closer.
- a heater (not shown) may be installed inside the substrate support. The heater generates heat to a predetermined temperature to heat the substrate support and the substrate seated on the substrate support, so that a thin film is uniformly deposited on the substrate.
- the gas supply unit 40 may be installed to pass through the lid 14 of the chamber 10, and a first gas supplier 42 is provided to supply the first gas and the second gas to the gas dispensing unit 30, respectively. and a second gas supplier 44 .
- the first gas may include a source gas for forming the gate insulating layer
- the second gas may include a reaction gas.
- each of the first gas supplier 42 and the second gas supplier 44 does not necessarily provide one gas, and the first gas supplier 42 and the second gas supplier 44 each supply a plurality of gases. It may be configured to simultaneously supply or supply a selected gas from among a plurality of gases.
- the first gas supplier 42 supplies a gas containing a silicon (Si) component as a source gas, or supplies hafnium (Hf), lanthanum (La), zirconium (Zr), tantalum (Ta), titanium ( A gas containing at least one of Ti), barium (Ba), strontium (Sr), and iridium (Ir) may be supplied.
- the second gas supplier 44 may supply a gas containing oxygen (O) or nitrogen (N) as a reaction gas.
- the gas dispensing unit 30 is installed inside the chamber 10, for example, on the lower surface of the chamber lid 12, and inside the gas dispensing unit 30, a first gas is sprayed onto and supplied to the substrate.
- a first gas supply path and a second gas supply path for spraying and supplying the second gas onto the substrate are formed.
- the first gas supply path and the second gas supply path are formed to be independent and separated from each other, so that the first gas and the second gas may be separately supplied to the substrate so that they are not mixed in the gas ejection unit 30. .
- the gas injection unit 30 may include an upper frame 32 and a lower frame 34 .
- the upper frame 32 is detachably attached to the lower surface of the chamber lid 12 and at the same time, a part of the upper surface, for example, the center of the upper surface is spaced apart from the lower surface of the chamber lid 12 by a predetermined distance.
- the first gas may diffuse from the first gas supply unit 42 in the space between the upper surface of the upper frame 32 and the lower surface of the chamber lid 12 .
- the lower frame 34 is installed at a predetermined interval on the lower surface of the upper frame 32 .
- the second gas supplied from the second gas supplier 44 may diffuse in a space between the upper surface of the lower frame 34 and the lower surface of the upper frame 32 .
- the upper frame 32 and the lower frame 34 may be integrally formed by being connected along the outer circumferential surface to form a separation space therein, or may be formed in a structure in which the outer circumferential surface is sealed by a separate sealing member. to be.
- the first gas supplied from the first gas supply unit 42 is diffused in the space between the lower surface of the chamber lid 12 and the upper frame 32, and the upper frame 32 and It may be formed to pass through the lower frame 34 and be supplied into the chamber 10 .
- the second gas supplied from the second gas supply unit 44 is diffused in the space between the lower surface of the upper frame 32 and the upper surface of the lower frame 34 to form the lower frame ( 34) to be supplied into the chamber 10.
- the first gas supply path and the second gas supply path may not communicate with each other, whereby the first gas and the second gas pass from the gas supply unit 40 through the gas dispensing unit 30 to the chamber ( 10) It can be supplied separately inside.
- a first electrode 38 may be installed on the lower surface of the lower frame 34, and the second electrode 36 is spaced apart at a predetermined interval from the lower side of the lower frame 24 and the outer side of the first electrode 28. can be installed.
- the lower frame 34 and the second electrode 36 may be formed by being connected along the outer circumferential surface, and the outer circumferential surface may be sealed by a separate sealing member.
- the first gas may pass through the first electrode 38 and be injected onto the substrate, and the second gas may be applied to the first electrode ( 38) and the second electrode 36 may be sprayed onto the substrate through the separation space.
- RF power from the RF power source 50 may be applied to either one of the lower frame 34 and the second electrode 36 .
- FIG. 1 a structure in which the lower frame 34 is grounded and RF power is applied to the second electrode 36 is shown as an example.
- the first electrode 38 installed on the lower surface of the lower frame 34 is also grounded. Therefore, when the RF power source 50 is applied to the second electrode 36, a first activation region, that is, a first plasma region is formed between the gas injection part 30 and the substrate support part 20, and the A second activation region, that is, a second plasma region may be formed between the first electrode 38 and the second electrode 36 .
- the second gas when the second gas is injected through the separation space between the first electrode 38 and the second electrode 36, the second gas is applied to the first electrode ( 38) and the second electrode 36, that is, from the second plasma region to the first plasma region. Therefore, in the deposition apparatus according to the embodiment of the present invention, the second gas may be activated inside the gas dispensing unit 30 and sprayed onto the substrate.
- the first gas supply path for supplying the first gas and the second gas supply path for supplying the second gas are formed separately, for example, the source gas and the reaction gas are optimally supplied for depositing a thin film. It can be sprayed by distributing it along the route.
- the thin film deposition method of the present invention will be described in detail with reference to FIGS. 2 and 3 .
- a description overlapping with that of the aforementioned deposition apparatus will be omitted.
- FIG. 2 is a diagram schematically showing a thin film deposition method according to an embodiment of the present invention
- FIG. 3 is a diagram for explaining a process cycle of forming a gate insulating film according to an embodiment of the present invention.
- the thin film deposition method includes the step of preparing a silicon carbide substrate having a plurality of semiconductor regions (S100), and on the silicon carbide substrate, a temperature of 100 to 400 ° C. Forming a gate insulating film by an atomic layer deposition process at a temperature (S200).
- a silicon carbide substrate containing silicon carbide (SiC) as a main component is carried into the chamber 10 of the above-described deposition apparatus and placed on the substrate support 20 .
- a silicon carbide substrate a plurality of semiconductor regions may be formed. That is, the silicon carbide substrate may include a silicon carbide single crystal wafer, and a plurality of semiconductor regions may be formed in the silicon carbide substrate by implanting a dopant into the silicon carbide single crystal wafer.
- the plurality of semiconductor regions may include a source region, a drain region, and a well region, and power manufactured using a silicon carbide substrate including a source region, a drain region, and a well region. The semiconductor device will be described later with reference to FIG. 5 .
- a gate insulating film on the silicon carbide substrate (S200) is performed.
- the step of forming the gate insulating film (S200) is performed after the step of preparing the silicon carbide substrate (S100), and between the step of preparing the silicon carbide substrate (S100) and the step of forming the gate insulating film (S200)
- steps added to manufacture a display device or a power semiconductor device may be performed.
- a silicon carbide substrate on which a gate electrode has already been formed may be prepared, but between the step of preparing a silicon carbide substrate (S100) and the step of forming a gate insulating film (S200), It goes without saying that, for example, a step of forming a gate electrode on a silicon carbide substrate may be further performed.
- the thin film deposition method according to an embodiment of the present invention may further include surface treating the silicon carbide substrate with plasma before forming the gate insulating layer on the silicon carbide substrate.
- the surface treatment of the silicon carbide substrate with plasma may be performed to remove a natural oxide film formed on the silicon carbide substrate in the step of preparing the silicon carbide substrate (S100).
- a surface treatment gas is sprayed onto the silicon carbide substrate through at least one of the first gas supply path and the second gas supply path of the deposition apparatus described above, and the surface treatment gas It is possible to apply the RF power source 50 to the process space so that plasma is generated by activating the .
- the surface treatment gas at least one of nitrous oxide (N 2 O), nitrogen monoxide (NO), nitrogen (N 2 ), hydrogen (H 2 ), oxygen (O 2 ), and argon gas may be used.
- the natural oxide film formed on the surface of the silicon carbide substrate including the deposition surface for depositing the gate insulating film can be removed.
- a gate insulating film is formed on a silicon carbide substrate by an atomic layer deposition (ALD) process at a temperature of 100 to 400 °C.
- ALD atomic layer deposition
- a gate insulating film is formed on a silicon carbide substrate through a thermal deposition process at a high temperature of about 1200° C. or higher.
- damage may occur to the silicon carbide substrate and the thin film already formed on the silicon carbide substrate, which may cause damage to the display device or power semiconductor device to be manufactured. It causes a problem that greatly deteriorates quality and reliability.
- a gate insulating film is formed on a silicon carbide substrate by an atomic layer deposition (ALD) process at a low temperature of 100 to 400 °C.
- ALD atomic layer deposition
- the step of forming the gate insulating film (S200) is performed by performing a plurality of cycles of sequentially performing the supplying source gas on the hydrocarbon substrate (S210) and the supplying reaction gas on the hydrocarbon substrate (S230).
- the source gas supplies the source gas onto the hydrocarbon substrate.
- the source gas is supplied onto the hydrocarbon substrate through the first gas supply path of the deposition apparatus.
- the source gas may be a gas containing at least one of various source materials for forming the gate insulating layer.
- a silicon oxide (SiO 2 ) layer or a silicon nitride (SiN) layer is formed as a gate insulating film
- a gas containing a silicon (Si) component may be used as a source gas
- a high-K (high-K) layer may be used as a gate insulating film.
- the source gas is hafnium (Hf), lanthanum (La), zirconium (Zr), tantalum (Ta), titanium (Ti), barium (Ba), strontium (Sr), and iridium (Ir). It may be a gas containing at least one.
- the source gas is injected and adsorbed on the hydrocarbon substrate. At this time, supplying source gas (S210) may be performed without applying power.
- the gate insulating layer may include a high-K dielectric layer. That is, the gate insulating film is formed of a high-K dielectric layer, or is provided on at least one of the upper and lower portions of the high-K dielectric layer as well as the high-K dielectric layer. A silicon (SiO 2 ) layer or a silicon nitride (SiN) layer may be further included.
- a silicon oxide (SiO 2 ) layer is provided on a silicon carbide substrate, a high-K dielectric layer is provided on the silicon oxide (SiO 2 ) layer, and a high-K (high-K) dielectric layer is provided.
- a silicon oxide (SiO 2 ) layer may be formed on the dielectric layer again.
- the gate insulating film is formed with such a multilayer structure, the active layer of the thin film transistor or power semiconductor device is prevented from being damaged due to the high-K material forming the high-K dielectric layer. You can protect against it.
- the silicon oxide (SiO 2 ) layer provided on the top and bottom of the high-K dielectric layer may be replaced with a silicon nitride (SiN) layer.
- purging the source gas may be performed.
- the raw material gas remaining in the process space of the chamber 10 may be removed.
- the step of purging the raw material gas may be performed by supplying an inert gas, for example, argon (Ar) gas to the process space, and the argon (Ar) gas is at least one of the first gas supply path and the second gas supply path. It can be supplied through the path of At this time, the RF power source 50 may not be applied while purging the source gas.
- an inert gas for example, argon (Ar) gas
- pre-treating the hydrocarbon substrate with plasma may be performed.
- a pretreatment gas containing hydrogen for example, hydrogen (H 2 ) gas is supplied to the substrate, and an RF power source 50 is applied to generate hydrogen plasma on the hydrocarbon substrate.
- the hydrogen (H 2 ) gas may be supplied through at least one of the first gas supply path and the second gas supply path, and in this way, after the raw material is adsorbed on the hydrocarbon substrate, the pretreatment containing hydrogen
- the step of activating and supplying the gas (S230) is performed, impurities included in the raw material adsorbed to the hydrocarbon substrate can be removed by the hydrogen plasma, and the raw material can be more firmly adsorbed to the hydrocarbon substrate.
- supplying a reactive gas (S230) is performed.
- a reactive gas containing, for example, oxygen is supplied onto a hydrocarbon substrate.
- the reaction gas containing oxygen is supplied to the substrate through the second gas supply path of the deposition apparatus.
- the RF power source 50 may be applied to the process space to generate plasma by activating the reactive gas in order to effectively react the oxygen component included in the reactive gas with the raw material.
- the oxygen-containing gas supplied by activating and supplying the reactive gas is activated with oxygen radicals to react with the raw material, and a gate insulating film is formed on the substrate at a lower process temperature. You can do it. That is, when the reactant gas is activated and supplied to the substrate, the step of forming the gate insulating film (S200) may be performed by controlling the process space of the chamber 10 to a low temperature of 100° C. or more and 400° C. or less.
- a step of purging the reaction gas may be performed.
- the reaction gas remaining in the process space of the chamber 10 may be removed.
- Purging the reaction gas may be performed by supplying an inert gas, for example, argon (Ar) gas to the process space, similar to the step of purging the source gas. It may be supplied through at least one of the second gas supply paths.
- post-processing the hydrocarbon substrate with plasma may be performed.
- a post-processing gas containing hydrogen for example, hydrogen (H 2 ) gas is supplied to the hydrocarbon substrate, and an RF power source 50 is applied to hydrogen on the substrate.
- plasma can be generated.
- the hydrogen (H 2 ) gas may be supplied through at least one of a first gas supply path and a second gas supply path.
- the gate insulating film in particular, the gate insulating film formed of a high-K dielectric layer is formed inside the chamber 10 or It can be easily formed even when the temperature of the silicon carbide substrate is low. That is, when the temperature of the inside of the chamber 10 or the silicon carbide substrate is low, for example, a gate insulating layer formed of a high-K dielectric layer may be formed at a low temperature of 100° C. to 400° C.
- impurities remaining in the chamber 10 or impurities included in the gate insulating film can be effectively removed by activating and supplying post-processing gas containing hydrogen on the hydrocarbon substrate (S240). .
- the process cycle may be performed multiple times. More specifically, supplying a source gas (S210), purging the source gas, pretreating a hydrocarbon substrate with plasma (S220), supplying a reaction gas (S230), purging the reaction gas And post-processing the hydrocarbon substrate with plasma (S240) may form one process cycle, and the process cycle may be repeatedly performed until a gate insulating film having a desired thickness is formed on the substrate.
- FIG. 4 is a diagram showing an example of a thin film transistor manufactured according to an embodiment of the present invention.
- the thin film transistor manufactured according to an embodiment of the present invention includes a gate electrode 200a, a source electrode 510a disposed above or below the gate electrode 200a and spaced apart from each other in a horizontal direction, and Drain electrode 520a, active layer 400a disposed between the gate electrode 200a, source electrode 510a and drain electrode 520a, and disposed between the gate electrode 200a and the active layer 400a
- a gate insulating layer 300a is included.
- the thin film transistor includes a gate electrode 200a formed on a silicon carbide substrate 100a and a gate insulating film 300a formed on the gate electrode 200a. ), a bottom gate type including an active layer 400a formed on the gate insulating film 300a, and a source electrode 510a and a drain electrode 520a formed spaced apart from each other on the active layer 400a. It may be a thin film transistor, but, of course, the same may be applied to a top gate type thin film transistor in which the gate electrode 200a is disposed thereon.
- the silicon carbide substrate 100a may include a substrate containing silicon carbide (SiC) as a main component.
- the substrate may include a silicon carbide single crystal wafer.
- the gate electrode 200a may be formed using a conductive material, for example, aluminum (Al), neodymium (Nd), silver (Ag), chromium (Cr), titanium (Ti), tantalum (Ta), or molybdenum. (Mo) and copper (Cu) can be formed of at least any one of metals or alloys containing them.
- the gate electrode 200a may be formed not only as a single layer but also as a multiple layer including a plurality of metal layers.
- metal layers such as chromium (Cr), titanium (Ti), tantalum (Ta), and molybdenum (Mo) with excellent physical and chemical properties and aluminum (Al), silver (Ag), or copper (Cu) series with low resistivity It can also be formed as a double layer including a metal layer of.
- a gate insulating layer 300a is formed on the gate electrode 200a. That is, the gate insulating layer 300a may be formed on the silicon carbide substrate 100a including the top and side portions of the gate electrode 200a.
- the gate insulating film 300a may be formed of a thin film using silicon oxide (SiO 2 ), which has excellent adhesion to metal materials and excellent dielectric breakdown voltage, but has a higher permittivity than silicon oxide (SiO 2 ).
- K can be formed of a dielectric. That is, the gate insulating layer 300a may include at least one high-K dielectric layer.
- the high-K (high-K) dielectric is hafnium oxide (HfO 2 ), hafnium silicon oxide (HfSiO 4 ), lanthanum oxide (LaO 2 ), lanthanum aluminum oxide (LaAlO 3 ), zirconium oxide (ZrO 2 ), zirconium Silicon oxide (ZrSiO 4 ), tantalum oxide (Ta 2 O 5 ), titanium oxide (TiO 2 ), barium strontium titanium oxide (BaSrTiO 3 ), barium titanium oxide (BaTiO 3 ), strontium titanium oxide (SrTiO 3 ), iridium oxide (IrO 2 ) It may include at least one material.
- the gate insulating film 300a is prepared by preparing a silicon carbide substrate (S100) and forming a gate insulating film on the silicon carbide substrate by an atomic layer deposition process at a temperature of 100 to 400 ° C (S200). It may be formed by a thin film deposition method according to an embodiment of the present invention including. That is, the gate insulating film 300a is formed by supplying source gas (S210), pre-treating the hydrocarbon substrate with plasma (S220), supplying reaction gas (S230), and post-processing the hydrocarbon substrate with plasma ( It may be formed by a thin film deposition method in which a process cycle including S240) is performed multiple times.
- S210 source gas
- S220 pre-treating the hydrocarbon substrate with plasma
- S230 supplying reaction gas
- post-processing the hydrocarbon substrate with plasma It may be formed by a thin film deposition method in which a process cycle including S240) is performed multiple times.
- the active layer 400a is formed on the gate insulating layer 300a, and at least partially overlaps the gate electrode 200a.
- the active layer 400a may be formed of, for example, a metal oxide thin film, and may be formed of a single metal oxide thin film or a plurality of metal oxide thin films.
- a metal oxide thin film may include zinc oxide (ZnO) or a material in which at least one of indium (In) and gallium (Ga) is doped on zinc oxide (ZnO).
- the source electrode 510a and the drain electrode 520a are formed on the active layer 400a and partially overlap the gate electrode 200a to form the source electrode 510a and the drain electrode 520a with the gate electrode 200a interposed therebetween. These may be formed spaced apart from each other.
- the source electrode 510a and the drain electrode 520a may be formed by the same process using the same material, and may be formed using a conductive material, for example, aluminum (Al), neodymium (Nd), silver (Ag), chromium (Cr), titanium (Ti), tantalum (Ta) and molybdenum (Mo) can be formed of at least one metal or an alloy containing these.
- the source electrode 510a and the drain electrode 520a may be formed of not only a single layer but also multiple layers of a plurality of metal layers.
- FIG. 5 is a diagram illustrating an example of a power semiconductor device manufactured according to an embodiment of the present invention.
- a power semiconductor device manufactured according to an embodiment of the present invention for example, a field effect transistor (FET) is formed on a silicon carbide substrate 100b and a silicon carbide substrate 100b.
- FET field effect transistor
- the gate insulating film 300b, the source electrode 510b and the drain electrode 520b, and the source electrode 510b and the drain electrode 520b provided to be spaced apart in a horizontal direction on the silicon carbide substrate 100b with the gate insulating film 300b interposed therebetween.
- a gate electrode 200b provided on the gate insulating film 300b between them.
- the silicon carbide substrate 100b may include a substrate in which dopants are implanted to form a plurality of semiconductor regions, and the plurality of semiconductor regions include a source region 110b functioning as a source of a field effect transistor and a field effect transistor. It may include a drain region 120b functioning as a drain of and a well region 130b functioning as an active layer of a field effect transistor.
- the gate insulating layer 300b may include at least one high-K dielectric layer, and the high-K dielectric layer may include hafnium oxide (HfO 2 ) and hafnium silicon oxide (HfSiO 4 ).
- the high-K dielectric layer may include hafnium oxide (HfO 2 ) and hafnium silicon oxide (HfSiO 4 ).
- a gate insulating film may be formed on a silicon carbide substrate using a low-temperature process.
- a display device or a power semiconductor device having a high breakdown voltage and excellent heat dissipation can be manufactured.
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Abstract
Description
Claims (7)
- 복수의 반도체 영역을 가지는 탄화규소 기판을 마련하는 단계; 및상기 탄화규소 기판 상에, 100 내지 400℃의 온도에서 원자층 증착 공정으로 게이트 절연막을 형성하는 단계;를 포함하는 박막 증착 방법.
- 청구항 1에 있어서,상기 게이트 절연막을 형성하는 단계 이전에,상기 탄화규소 기판을 플라즈마로 표면 처리하는 단계;를 더 포함하는 박막 증착 방법.
- 청구항 1에 있어서,상기 게이트 절연막을 형성하는 단계는,상기 탄화수소 기판 상에 원료 가스를 공급하는 단계;상기 탄화수소 기판을 플라즈마로 전처리하는 단계;상기 탄화수소 기판 상에 반응 가스를 공급하는 단계; 및상기 탄화수소 기판을 플라즈마로 후처리하는 단계;를 포함하고,상기 원료 가스를 공급하는 단계, 전처리하는 단계, 반응 가스를 공급하는 단계 및 후처리하는 단계를 포함하는 공정 사이클은 복수 회로 수행되는 박막 증착 방법.
- 청구항 1에 있어서,상기 전처리하는 단계 및 후처리하는 단계는,상기 탄화수소 기판 상에 수소 가스를 분사하는 단계; 및상기 수소 가스를 방전시켜, 상기 탄화수소 기판 상에 플라즈마를 발생시키는 단계;를 포함하는 박막 증착 방법.
- 청구항 1에 있어서,상기 게이트 절연막은 하이-K(high-K) 유전체층을 포함하는 박막 증착 방법.
- 청구항 5에 있어서,상기 게이트 절연막은 상기 하이-K(high-K) 유전체층의 상부 및 하부 중 적어도 하나에 마련되는 산화규소층 또는 질화규소층을 더 포함하는 박막 증착 방법.
- 청구항 1에 있어서,상기 탄화수소 기판을 마련하는 단계는,소스 영역, 웰 영역 및 드레인 영역을 가지는 탄화규소 기판을 마련하고,상기 게이트 절연막을 형성하는 단계는,상기 웰 영역 상에 게이트 절연막을 형성하는 박막 증착 방법.
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US18/560,924 US20240258104A1 (en) | 2021-05-17 | 2022-05-04 | Thin film deposition method |
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KR100469132B1 (ko) * | 2004-05-18 | 2005-01-29 | 주식회사 아이피에스 | 주기적 펄스 두 단계 플라즈마 원자층 증착장치 및 방법 |
KR20190052001A (ko) * | 2016-09-26 | 2019-05-15 | 젯트에프 프리드리히스하펜 아게 | 규소 탄화물 상의 절연 층 및 반도체 소자 제조 방법 |
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