WO2022244931A1 - 발광 다이오드 및 이를 이용한 디스플레이 모듈 - Google Patents
발광 다이오드 및 이를 이용한 디스플레이 모듈 Download PDFInfo
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- WO2022244931A1 WO2022244931A1 PCT/KR2021/016123 KR2021016123W WO2022244931A1 WO 2022244931 A1 WO2022244931 A1 WO 2022244931A1 KR 2021016123 W KR2021016123 W KR 2021016123W WO 2022244931 A1 WO2022244931 A1 WO 2022244931A1
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- semiconductor layer
- light emitting
- emitting diode
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- substrate
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
Definitions
- the present disclosure relates to a light emitting diode and a display module using the same, and relates to a method, apparatus, and system for transferring the light emitting diode to a substrate through a fluidic self-assembly method, for example.
- a display module having a light emitting diode applicable to a substrate for fluid self-assembly and a substrate to which the light emitting diode can be easily bonded.
- a light emitting diode including a covering second chip electrode may be provided.
- the first chip electrode may include a first portion covering a first portion of an upper surface of the second semiconductor layer; a second portion extending from the first portion of the first chip electrode and covering the first side surface of the second semiconductor layer; and a third portion extending from the first portion of the first chip electrode and connected to the first semiconductor layer.
- the second portion may extend to a side surface of the active layer or a side surface of the first semiconductor layer.
- the light emitting diode may be disposed between the third portion of the first chip electrode and the second semiconductor layer and between the third portion of the first chip electrode and the third portion of the first chip electrode so that the third portion does not directly contact the second semiconductor layer and the active layer.
- An insulating layer provided between the active layers may be further included.
- the third portion may have a length greater than or equal to a combined height of the second semiconductor layer and the active layer to reach the first semiconductor layer.
- the second chip electrode may include a first portion covering a second portion of an upper surface of the second semiconductor layer; and a second portion extending from the first portion of the second chip electrode and covering the second side surface of the second semiconductor layer.
- the light emitting diode further includes an insulating film covering a top surface of the second semiconductor layer and a side surface of the second semiconductor layer, and the second chip electrode extends to the first portion of the second chip electrode to pass through the insulating film.
- a third portion connected to the second semiconductor layer may be further included.
- the first chip electrode and the second chip electrode may be disposed asymmetrically with respect to the light emitting diode.
- the first chip electrode and the second chip electrode may be disposed symmetrically with respect to the light emitting diode.
- a substrate having a plurality of mounting grooves on one surface; a plurality of light emitting diodes each mounted in the plurality of mounting grooves and emitting light; and a driving circuit that generates driving signals for the plurality of light emitting diodes, wherein the light emitting diodes include a first semiconductor layer and a second semiconductor layer, and an active layer provided between the first semiconductor layer and the second semiconductor layer. and a first chip electrode covering the first portion of the upper surface of the second semiconductor layer and a portion of the first side surface of the second semiconductor layer, and the second semiconductor different from the first portion of the upper surface of the second semiconductor layer.
- a display module may include a first substrate electrode pad to which the chip electrode is electrically connected, and a second substrate electrode pad to which the second chip electrode is electrically connected.
- the first substrate electrode pad may include a first portion provided around one side of the corresponding mounting groove; and a second portion extending from the first portion to an inner circumferential surface of the corresponding mounting groove.
- the first part or the second part of the first substrate electrode pad may be electrically connected to the first chip electrode.
- the second substrate electrode pad may include a first portion provided around one side of the corresponding mounting groove; and a second portion extending from the first portion to an inner circumferential surface of the corresponding mounting groove.
- a first part or a second part of the first substrate electrode pad may be electrically connected to the second chip electrode.
- first substrate electrode pad a portion electrically unconnected to the first chip electrode is covered with an insulating film, and in the second substrate electrode pad, a portion electrically unconnected to the second chip electrode is covered by an insulating film. can be covered
- FIG. 1 is a block diagram of an electronic device including a display module according to various embodiments of the present disclosure.
- FIG. 2 is a diagram illustrating a display panel according to an embodiment of the present disclosure.
- FIG. 3 is an enlarged view of a portion 2 indicated in FIG. 2 and is a view showing pixels of a display panel.
- FIG. 4 is a cross-sectional view taken along the line A-A indicated in FIG. 3 .
- FIG. 5 is a cross-sectional view showing a light emitting diode according to an embodiment of the present disclosure.
- FIG. 6 is a plan view illustrating a light emitting diode according to an exemplary embodiment of the present disclosure.
- FIG. 7 is a diagram illustrating an example of removing defective light emitting diodes from a substrate according to an embodiment of the present disclosure.
- FIG. 8 is a view illustrating an example in which portions of an insulating layer respectively covering a third substrate electrode pad and a fourth substrate electrode pad of a substrate according to an embodiment of the present disclosure are removed.
- FIG. 9 is a view showing an example of arranging light emitting diodes according to an embodiment of the present disclosure in a mounting groove of a substrate.
- FIG. 10 is a diagram illustrating an example in which a first chip electrode and a second chip electrode of a light emitting diode are electrically connected to a third substrate electrode pad and a fourth substrate electrode pad of a substrate, respectively, according to an embodiment of the present disclosure.
- 11A to 11D are views illustrating different shapes of a first chip electrode and a second chip electrode of a light emitting diode according to various embodiments of the present disclosure.
- Embodiments of the present disclosure may apply various transformations and may have various embodiments, and specific embodiments are illustrated in the drawings and described in detail in the detailed description. However, this is not intended to limit the scope to specific embodiments, and should be understood to include all transformations, equivalents, and substitutes included in the spirit and scope of technology disclosed. In describing the embodiments, if it is determined that a detailed description of a related known technology may obscure the subject matter, the detailed description will be omitted.
- first, second, and third may be used to describe various components, but the components should not be limited by the terms. The terms may only be used for the purpose of distinguishing one component from another. For example, a first element may be termed a second element, and similarly, a second element may be termed a first element, without departing from the scope of the present disclosure.
- a “module” or “unit” performs at least one function or operation, and may be implemented in hardware or software or a combination of hardware and software.
- a plurality of “modules” or a plurality of “units” may be integrated into at least one module and implemented by at least one processor, except for “modules” or “units” that need to be implemented with specific hardware.
- the display module may include a display panel.
- the display panel is one of flat panel display panels, and a plurality of inorganic light emitting diodes each having a size of 100 ⁇ m or less may be arranged.
- LCD liquid crystal display
- micro LED display modules offer better contrast, response time and energy efficiency.
- organic LEDs and inorganic light emitting diodes eg, micro LEDs
- micro LEDs have good energy efficiency
- micro LEDs are brighter than OLEDs, have better luminous efficiency, and longer lifetime.
- the micro LED may be a semiconductor chip capable of emitting light by itself when power is supplied. Micro LED has fast response speed, low power, and high luminance.
- the micro LED has a higher efficiency of converting electricity into photons than conventional liquid crystal displays (LCDs) or organic light emitting diodes (OLEDs). That is, they have higher "brightness per watt" compared to conventional LCD or OLED displays.
- micro LEDs can produce the same brightness with about half the energy compared to conventional LEDs (width, length, and height each exceed 100 ⁇ m) or OLEDs.
- micro LED can realize high resolution, excellent color, contrast and brightness, so it can accurately express a wide range of colors, and it can implement a clear screen even in bright sunlight outdoors.
- micro LED is resistant to burn-in and generates little heat, guaranteeing a long lifespan without deformation.
- the micro LED has an anode electrode (anode electrode) and a cathode electrode (cathode electrode) formed on the same first surface, and a light emitting surface opposite to the first surface on which the electrodes are formed. It may have a flip chip structure formed on the second surface located on the side.
- the anode electrode and the cathode electrode of the micro LED may be provided on the light emitting surface of the micro LED.
- the anode electrode and the cathode electrode of the micro LED may be positioned on opposite sides of each other.
- an anode electrode and a cathode electrode may be disposed on the light emitting surface and the side surface of the micro LED, respectively.
- the anode electrode of the micro LED may extend from the light emitting surface to the side surface
- the cathode electrode of the micro LED may also extend from the light emitting surface to the side surface.
- the anode electrode and the cathode electrode of the micro LED may be positioned on opposite sides of each other.
- a thin film transistor (TFT) layer formed with a TFT circuit may be disposed on a front surface of the glass substrate, and a driving circuit for driving the TFT circuit may be disposed on a rear surface of the glass substrate.
- a TFT circuit can drive a number of pixels arranged in a TFT layer.
- the front surface of the glass substrate may be divided into an active region and an inactive region.
- the active region may correspond to an area occupied by the TFT layer on the entire surface of the glass substrate, and the inactive area may be an area excluding the area occupied by the TFT layer on the entire surface of the glass substrate.
- the edge region of the glass substrate may be an outermost portion of the glass substrate. Also, the edge region of the glass substrate may be an area other than a region of the glass substrate where a circuit is formed. Also, the edge region of the glass substrate may include a side surface of the glass substrate, a part of the front surface of the glass substrate adjacent to the side surface, and a part of the rear surface of the glass substrate.
- the glass substrate may be formed in a quadrangle type. Specifically, the glass substrate may be formed in a rectangle or square.
- the edge region of the glass substrate may include at least one side of the four sides of the glass substrate.
- the substrate applied to the display module need not be limited to a glass substrate, and may be a polymer substrate (eg, a polyimide substrate) or a ceramic substrate.
- the display module can be applied to a wearable device, a portable device, a handheld device, and various displays as a single unit installed in electronic products or electric vehicles. It is a matrix type and can be applied to display devices such as PC (personal computer) monitors, high-resolution TVs, signage (or digital signage), and electronic displays through multiple assembly arrangements. have.
- PC personal computer
- FIG. 1 is a block diagram of a display module of an electronic device according to various embodiments of the present disclosure.
- a display device 1 may include a display module 3 and a processor 5.
- the display module 3 may display various images.
- the image may include a still image and/or a moving image.
- the display module 3 can display various images such as broadcast content and multimedia content.
- the display module 3 may display a user interface (UI) and icons.
- UI user interface
- the display module 3 may include a display panel 10 and a display driver IC (DDI) 7 for controlling the display panel 10 .
- DCI display driver IC
- the display driver IC 7 may include an interface module 7a, a memory 7b, an image processing module 7c, or a mapping module 7d.
- the memory 7b may include a buffer memory according to an exemplary embodiment.
- the display driver IC 7 transmits image information including, for example, image data or image control signals corresponding to commands for controlling the image data to other parts of the display device 1 through the interface module 7a. can be received from the component.
- image information may be received from a processor 5 (eg, a main processor (eg, an application processor) or an auxiliary processor (eg, a graphic processing unit) that operates independently of the function of the main processor).
- a processor 5 eg, a main processor (eg, an application processor) or an auxiliary processor (eg, a graphic processing unit) that operates independently of the function of the main processor.
- the display driver IC 7 can communicate with the sensor module through the interface module 7a. Also, the display driver IC 7 may store at least a portion of the received image information in the memory 7b, for example, in units of frames.
- the image processing module 7c may pre-process or post-process (eg, adjust resolution, brightness, or size) at least part of the image data based on at least the characteristics of the image data or the characteristics of the display panel 10 . ) can be performed.
- the mapping module 7d may generate a voltage value or current value corresponding to the image data pre-processed or post-processed through the image processing module 7c.
- the generation of the voltage value or the current value depends on, for example, the properties of the pixels of the display panel 10 (eg, the arrangement of pixels (RGB stripe or PenTile structure) or the size of each sub-pixel). It can be performed based at least in part. At least some pixels of the display panel 10 are driven based, for example, at least in part on the voltage value or current value, so that visual information (eg text, image, or icon) corresponding to the image data is displayed on the display panel ( 10) can be displayed.
- the properties of the pixels of the display panel 10 eg, the arrangement of pixels (RGB stripe or PenTile structure) or the size of each sub-pixel. It can be performed based at least in part.
- At least some pixels of the display panel 10 are driven based, for example, at least in part on the voltage value or current value, so that visual information (eg text, image, or icon) corresponding to the image data is displayed on the display panel ( 10) can be displayed.
- the display driver IC 7 may transmit a driving signal (eg, a driver driving signal, a gate driving signal, etc.) to the display based on image information received from the processor 5 .
- a driving signal eg, a driver driving signal, a gate driving signal, etc.
- the display driver IC 7 may display an image based on the image signal received from the processor 5 .
- the display driver IC 7 generates a driving signal for a plurality of subpixels based on the image signal received from the processor 5, and displays an image by controlling light emission of the plurality of subpixels based on the driving signal. can do.
- the display module 3 may further include a touch circuit.
- the touch circuit may include a touch sensor and a touch sensor IC for controlling the touch sensor.
- the touch sensor IC may control the touch sensor to detect, for example, a touch input or a hovering input to a designated position of the display panel 10 .
- the touch sensor IC may detect a touch input or a hovering input by measuring a change in a signal (eg, voltage, light amount, resistance, or charge amount) for a designated position of the display panel 10 .
- the touch sensor IC may provide information (eg, location, area, pressure, or time) on the sensed touch input or hovering input to the processor 13 .
- at least a part of the touch circuit is a display driver IC 7, a part of the display panel 10, or another component disposed outside the display module 3 ( eg as part of a co-processor).
- the processor 5 includes a digital signal processor (DSP), a microprocessor, a graphics processing unit (GPU), an artificial intelligence (AI) processor, a neural processing unit (NPU), and a TCON for processing digital image signals.
- DSP digital signal processor
- MCU micro controller unit
- MPU micro processing unit
- controller application A processor
- AP application processor
- CP communication processor
- the processor 5 has a built-in processing algorithm. It may be implemented in the form of a system on chip (SoC), large scale integration (LSI), application specific integrated circuit (ASIC), or field programmable gate array (FPGA).
- SoC system on chip
- LSI large scale integration
- ASIC application specific integrated circuit
- FPGA field programmable gate array
- the processor 5 may control hardware or software components connected to the processor 5 by driving an operating system or an application program, and may perform various data processing and operations.
- the processor 5 may load and process commands or data received from at least one of the other components into a volatile memory, and store various data in a non-volatile memory.
- FIG. 2 is a view showing a display panel according to an embodiment of the present disclosure
- FIG. 3 is an enlarged view of a 2 part shown in FIG. 2 and is a view showing pixels of the display panel
- FIG. A cross-sectional view is shown.
- the display panel 10 may include a plurality of pixels P arranged on a substrate 20 .
- the display panel 10 may include a plurality of pixel areas 21 arranged in a matrix form. In each pixel area 21, one pixel P is disposed, and each pixel P includes a first sub-pixel 100 emitting red light, a second sub-pixel 120 emitting green light, and A third sub-pixel 140 emitting blue light may be included.
- the first sub-pixel 100, the second sub-pixel ( 120) and a plurality of thin film transistors (TFTs) for driving the third sub-pixel 140 may be disposed.
- the display module 3 may be a touch screen combined with a touch sensor, a flexible display, a rollable display, or a 3D display.
- a large display may be implemented by providing a plurality of display modules according to an embodiment of the present disclosure and physically connecting the modules.
- the display panel 10 may include a-Si (amorphous silicon) TFT, LTPS (low temperature polycrystalline silicon) TFT, LTPO (low temperature polycrystalline oxide) TFT, HOP (hybrid oxide and polycrystalline silicon) TFT, LCP It may include a substrate that can be implemented in the form of a (liquid crystalline polymer) TFT or an organic TFT (OTFT).
- a-Si amorphous silicon
- LTPS low temperature polycrystalline silicon
- LTPO low temperature polycrystalline oxide
- HOP hybrid oxide and polycrystalline silicon
- the display panel 10 may include a substrate 20 and a TFT layer 30 provided on the substrate 20 .
- a plurality of mounting grooves 41 may be provided on the mounting surface of the substrate 20 (eg, the upper surface of the TFT layer 30).
- a plurality of mounting grooves 41 corresponding to a plurality of sub-pixels constituting one pixel P may be provided in one pixel area 21 .
- three mounting grooves 41 may be provided.
- the mounting groove 41 may be formed in the insulating layer 40 stacked on the TFT layer 30 .
- the insulating layer 40 may be made of an organic material or an inorganic material. Alternatively, the insulating layer 40 may have a structure in which at least one organic material layer and at least one inorganic material layer are stacked. Alternatively, the insulating layer 40 may have a structure in which inorganic layers and organic layers are alternately stacked.
- a protective layer 43 may be stacked on the insulating layer 40 to protect the insulating layer 40 from external impact.
- the protective layer 43 may be made of an organic material.
- the protective film 43 may be optionally provided and may be omitted as needed.
- the mounting groove 41 may be formed to a specific depth in the insulating layer 40 through an etching process or the like.
- the specific depth is a preset depth.
- the light emitting diode 100 may be provided in the mounting groove 41 .
- the post 115 of the light emitting diode 100 inserted into the mounting groove 41 may protrude out of the mounting groove 41 .
- the first substrate electrode pad 51 and the second substrate electrode pad 52 may be disposed on the bottom of the mounting groove 41 .
- the bottom of the mounting groove 41 may be the top surface of the TFT layer 30 .
- the first substrate electrode pad 51 may be an anode substrate electrode pad.
- the second substrate electrode pad 52 may be a cathode substrate electrode pad.
- the first substrate electrode pad 51 is connected to the first chip electrode 111 of the light emitting diode 100 .
- a solder ball or solder paste may be applied on the first substrate electrode pad 51 to enable electrical and physical connection. Accordingly, the first substrate electrode pad 51 may be electrically and physically connected to the first chip electrode 111 of the light emitting diode 100 through a solder ball or solder paste.
- the second substrate electrode pad 52 is connected to the second chip electrode 112 of the light emitting diode 100 .
- the second substrate electrode pad 52 may be electrically and physically connected to the second chip electrode 112 of the light emitting diode 100 in the same way as the first substrate electrode pad 51 .
- the first substrate electrode pad 51 may be electrically connected to, for example, the gate electrode wiring 53 provided on the TFT layer 30 .
- the second substrate electrode pad 52 may be electrically connected to the common electrode wiring 54 provided on the TFT layer 30 .
- the third substrate electrode pad 60 and the fourth substrate electrode pad 70 corresponding to each mounting groove 41 may be formed on the substrate 20 so that light emitting diodes may be electrically connected to each other for repair. That is, the third and fourth substrate electrode pads 60 and 70 may be substrate electrode pads for repair.
- the third substrate electrode pad 60 may be formed on the insulating layer 40 .
- the first part 61 is electrically connected to the gate electrode wiring 53
- the second part 62 is disposed around the mounting groove 41
- the third part ( 63) may extend from the second portion 62 to the sidewall of the mounting groove 41.
- the second part 62 and the third part 63 of the third substrate electrode pad 60 may be selectively used according to the type or shape of the micro LED for repair.
- the second part 62 or the third part 63 of the third substrate electrode pad 60 may be used in consideration of the position of the first chip electrode of the micro LED for repair.
- the fourth substrate electrode pad 70 may be formed on the insulating layer 40 like the third substrate electrode pad 60 .
- the fourth substrate electrode pad 70 may be disposed symmetrically with the third substrate electrode pad 60 with respect to the center of the mounting groove 41 .
- the third substrate electrode pad 60 and the fourth substrate electrode pad 70 may be respectively disposed on both sides of the mounting groove 41 in a non-symmetrical arrangement.
- the first part 71 is electrically connected to the common electrode wire 54
- the second part 72 is disposed around the mounting groove 41
- the third part ( 73) may extend from the second portion 72 to the sidewall of the mounting groove 41.
- the second part 72 and the third part 73 of the fourth substrate electrode pad 70 may be selectively used according to the type or shape of the micro LED for repair.
- the second part 72 or the third part 73 of the fourth substrate electrode pad 70 may be used in consideration of the position of the second chip electrode of the micro LED for repair.
- the third and fourth substrate electrode pads 60 and 70 may be covered with an insulating layer 80 to prevent unwanted electrical connection to other electronic devices or the like when not in use.
- a p-type semiconductor layer 101, an active layer 102, and an n-type semiconductor layer 103 are sequentially stacked, and first and second light emitting surfaces 104 and 105 are opposite to each other. It may be a flip-type light emitting diode in which the chip electrodes 111 and 112 are disposed.
- the light emitting diode 100 may include a post 115 having a magnetic layer 116 so that the light emitting diode 100 may be inserted into the mounting groove 41 by itself by a magnetic field applied to the substrate 20 during fluid self-assembly.
- the post 115 may protrude from the light emitting surface 104 of the light emitting diode 100 to a predetermined length.
- the magnetic layer 116 included in the post 115 may be a diamagnetism material (eg, Ge) or a material having magnetic properties (eg, Cr, Mn, Fe, Co, Ni, Cu). have.
- the post 115 is positioned on the light emitting surface 104 but may be disposed to be biased toward one side of the light emitting surface 104 as shown in FIG.
- the posture is such that the first chip electrode 111 corresponds to the first substrate electrode pad 51 and the second chip electrode 112 corresponds to the second substrate electrode pad 52 by the magnetic field. It can be inserted into the mounting groove 41 while being aligned. In addition, the light emitting diode 100 can be prevented from being inserted into the mounting groove 41 by the post 115 with the light emitting surface 104 facing the bottom of the mounting groove 41 .
- the post 115 may be removed from the light emitting diode 100 through a separate process after the light emitting diode 100 is mounted in the mounting groove 41 .
- first and second chip electrodes 111 and 112 may form a metal bonding state in which they are fused with the first and second substrate electrode pads 51 and 52 by applied heat.
- FIG. 5 is a cross-sectional view showing a light emitting diode according to an embodiment of the present disclosure
- FIG. 6 is a plan view showing a light emitting diode according to an embodiment of the present disclosure.
- the light emitting diode 200 includes a first semiconductor layer 201, an active layer 202, and a second semiconductor layer 203 sequentially stacked, and a first chip electrode 211 ) and the second chip electrode 212 .
- the first semiconductor layer 201 may include, for example, a p-type semiconductor layer (anode, oxide electrode).
- the p-type semiconductor layer may be selected from, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, and AlInN, and may be doped with a p-type dopant such as Mg, Zn, Ca, Sr, and Ba.
- the second semiconductor layer 203 may include, for example, an n-type semiconductor layer (cathode, reduction electrode).
- the n-type semiconductor layer may be selected from, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, and the like, and may be doped with an n-type dopant such as Si, Ge, or Sn.
- the light emitting diode 200 is not limited to the above configuration, and for example, the first semiconductor layer 201 may include an n-type semiconductor layer and the second semiconductor layer 203 may include a p-type semiconductor layer. .
- the active layer 202 is a region where electrons and holes recombine, and as the electrons and holes recombine, the active layer 202 transitions to a lower energy level and can generate light having a wavelength corresponding thereto.
- the active layer 202 may include a semiconductor material, such as amorphous silicon or poly crystalline silicon.
- the present embodiment is not limited thereto, and may contain an organic semiconductor material or the like, and may be formed in a single quantum well (SQW) structure or a multi quantum well (MQW) structure.
- the first chip electrode 211 is for electrical connection between the first semiconductor layer 201 and the third substrate electrode pad 60, and may cover a part of the upper surface and a part of the side surface 207 of the light emitting diode 200.
- the upper surface of the light emitting diode 200 may correspond to the upper surface of the second semiconductor layer 203 as the light emitting surface 205 .
- Side surfaces of the light emitting diode 200 may correspond to respective side surfaces of the first semiconductor layer 201 , the active layer 202 , and the second semiconductor layer 203 .
- the first chip electrode 211 may be made of indium tin oxide (ITO), which is a transparent electrode, or Au or an alloy containing Au, which is a thin film, to minimize interference of light emitted from the light emitting diode 200 .
- ITO indium tin oxide
- the first chip electrode 211 includes a first part 211a and a second part 211b electrically connected to the third substrate electrode pad 60 and a third part connected to the first semiconductor layer 201 ( 211c) may be included.
- the first portion 211a of the first chip electrode 211 may cover a portion of the upper surface of the first semiconductor layer 201 .
- the first part 211a of the first chip electrode 211 may be electrically connected to the second part 62 of the third substrate electrode pad 60 through the first wire 311 (see FIG. 10 ).
- the first wiring 311 may be deposited and formed on the first portion 211a of the first chip electrode 211 and the second portion 62 of the third substrate electrode pad 60 in the form of a thin film.
- the first wire 311 may be Au or an alloy containing Au.
- the second portion 211b of the first chip electrode 211 may extend to the first portion 211a to cover side surfaces of the first semiconductor layer 201, the active layer 202, and the second semiconductor layer 203. have.
- the second portion 211b of the first chip electrode 211 may be electrically connected to the third portion 63 of the third substrate electrode pad 60 (see FIG. 9 ).
- the second portion 211b of the first chip electrode 211 may have a length that can cover only the first semiconductor layer 201 or only the active layer 202 .
- the length of the second part 211b of the first chip electrode 211 is sufficient if it can be electrically connected to the third part 63 of the third substrate electrode pad 60 . That is, the second portion 211b of the first chip electrode 211 may extend from the side of the second semiconductor layer 203 to the side of the first semiconductor layer 201 or only to the side of the active layer 202. .
- the third portion 211c of the first chip electrode 211 may extend to the first portion 211a and be connected to the first semiconductor layer 201 .
- the third portion 211c of the first chip electrode 211 may have a length extending to the first semiconductor layer 201 through the second semiconductor layer 203 and the active layer 202 .
- the protective layer 230 since the third portion 211c of the first chip electrode 211 is isolated from the second semiconductor layer 203 and the active layer 202 by the protective layer 230, electrical contact is not made.
- the second chip electrode 212 is for electrical connection between the second semiconductor layer 203 and the fourth substrate electrode pad 70, and a part of the upper surface (light emitting surface 205) of the light emitting diode 200 and the side surface ( 207) may be covered. In this case, the second chip electrode 212 may be disposed on a side facing or opposite to the first chip electrode 211 as shown in FIG. 6 .
- the second chip electrode 212 is made of indium tin oxide (ITO), which is a transparent electrode, or Au or an alloy containing Au, which is a transparent electrode, to minimize interference of light emitted from the light emitting diode 200. etc. can be made.
- ITO indium tin oxide
- the second chip electrode 212 includes a first part 212a and a second part 212b electrically connected to the fourth substrate electrode pad 70 and a third part connected to the second semiconductor layer 203 ( 212c) may be included.
- the first portion 212a of the second chip electrode 212 may cover a portion of the upper surface of the first semiconductor layer 201 .
- the first portion 212a of the second chip electrode 212 may be electrically connected to the second portion 72 of the fourth substrate electrode pad 70 through the second wire 312 (see FIG. 10 ).
- the second wire 312 may be deposited and formed on the first portion 212a of the second chip electrode 212 and the second portion 72 of the fourth substrate electrode pad 70 in the form of a thin film.
- the second wire 312 may be Au or an alloy containing Au.
- the second portion 212b of the second chip electrode 212 may extend to the first portion 212a to cover side surfaces of the first semiconductor layer 201, the active layer 202, and the second semiconductor layer 203. have.
- the second portion 212b of the second chip electrode 212 may be electrically connected to the third portion 73 of the fourth substrate electrode pad 70 (see FIG. 9 ).
- the second portion 212b of the second chip electrode 212 may have a length that can cover only the first semiconductor layer 201 or only the active layer 202 .
- the length of the second part 212b of the second chip electrode 212 is sufficient to be electrically connected to the third part 73 of the fourth substrate electrode pad 70 .
- the third portion 212c of the second chip electrode 212 may extend to the first portion 212a and be connected to the second semiconductor layer 203 .
- the top and side surfaces of the light emitting diode 200 may be covered with an insulating layer 230 .
- the insulating film 230 may be made of organic or inorganic materials, and may have a structure in which organic and inorganic materials are repeatedly stacked.
- a first portion 212a of the second chip electrode 212 may be stacked on a portion of the insulating layer 230 .
- the present disclosure is not limited thereto and a portion of the insulating layer 230 on which the first portion 212a of the second chip electrode 212 is stacked may be omitted. Accordingly, the first portion 212a of the second chip electrode 212 may directly contact the second semiconductor layer 203 .
- FIG. 7 is a diagram illustrating an example of removing defective light emitting diodes from a substrate according to an embodiment of the present disclosure.
- the first and second substrate electrode pads 51a and 51b are the first and second chip electrodes of the defective light emitting diode 100. While being forcibly separated from (111, 112), surfaces bonded to the first and second chip electrodes (111, 112) may be damaged as shown in FIG. Accordingly, the first and second substrate electrode pads 51a and 51b of the mounting groove 41 may not be reused.
- preliminary work may be performed to mount the good light emitting diode 200 for repair.
- a portion of the insulating layer 80 may be removed.
- a portion of the insulating layer 80 removed here may be determined according to a contact portion between the first and second chip electrodes 211 and 212 of the light emitting diode 200 .
- portions of the insulating layer 80 covering the third portions 63 and 73 of the third and fourth substrate electrode pads 60 and 70 , respectively, may be removed.
- the removed parts correspond to the second part 211a of the first chip electrode 211 and the second part 212a of the second chip electrode 212, respectively, to form the third and fourth substrate electrode pads 60 and 70 can be electrically connected to
- an adhesive member eg, For example, solder paste, etc.
- solder paste may make good electrical connection between the first and second chip electrodes 211 and 212 of the light emitting diode 200 and the third and fourth substrate electrode pads 60 and 70 .
- FIG. 9 is a view showing an example of arranging light emitting diodes according to an embodiment of the present disclosure in a mounting groove of a substrate.
- a light emitting diode 200 is inserted into the mounting groove 41 from which the defective light emitting diode 100 is removed.
- the second part 211b of the first electrode pad 211 of the light emitting diode 200 contacts the third part 63 of the third substrate electrode pad 60, and the light emitting diode 200
- the second portion 212b of the second electrode pad 212 contacts the third portion 73 of the fourth substrate electrode pad 70 .
- the light emitting diode 200 may be bonded to the substrate by a thermal compression method.
- the second portion 211b of the first electrode pad 211 of the light emitting diode 200 may fuse with the third portion 63 of the third substrate electrode pad 60 to form a metal bonding state.
- the second portion 212b of the second electrode pad 212 of the light emitting diode 200 may fuse with the third portion 73 of the fourth substrate electrode pad 70 to form a metal bonding state.
- the first and second chip electrodes 211 and 212 of the light emitting diode 200 inserted into the mounting groove 41 may be electrically connected to the third and fourth substrate electrode pads 60 and 70, respectively.
- the light emitting diode 200 according to an embodiment of the present disclosure can be used for repair as described above, but is not limited and can also be used for transfer.
- the substrate 20 on which the light emitting diode 200 is mounted includes first and second substrate electrode pads 51 and 52 (see FIG. 4 ). ) can be omitted.
- the first and second chip electrodes 211 and 212 of the light emitting diode 200 may be electrically connected to the third and fourth substrate electrode pads 60 and 70 provided on the substrate 20 in a transfer process. .
- the first portions 211a and 212a of the first and second chip electrodes 211 and 212 of the light emitting diode 200 are the third and fourth substrate electrode pads 60 and 70 of the substrate 20, respectively.
- An example of electrically connecting to the second parts 62 and 72 of the will be described.
- FIG. 10 is a diagram illustrating an example in which an anode electrode and a cathode electrode of a light emitting diode are electrically connected to an anode electrode pad and a cathode electrode pad of a substrate, respectively, according to an embodiment of the present disclosure.
- the first portions 211a and 212a of the first and second chip electrodes 211 and 212 of the light emitting diode 200 are the second portions of the third and fourth substrate electrode pads 60 and 70.
- portions of the insulating layer 80 covering the second portions 62 and 72 of the third and fourth substrate electrode pads 60 and 70 , respectively, are removed.
- the light emitting diode 200 is inserted into the mounting groove 41 from which the defective light emitting diode 100 is removed.
- the first part 211a of the first chip electrode 211 of the light emitting diode 200 may be electrically connected to the second part 62 of the third substrate electrode pad 60 through the first wire 311. .
- the first part 212a of the second chip electrode 212 of the light emitting diode 200 may be electrically connected to the second part 72 of the fourth substrate electrode pad 70 through the second wire 312.
- the first and second wires 311 and 312 are applied on the upper side of the display panel 10, the first and second chip electrodes 211 and 212 of the light emitting diode 200 and the third and third A bonding operation between the four substrate electrode pads 60 and 70 can be easily performed.
- the first and second wires 311 and 312 may be applied on the substrate by an inkjet method, and may be applied in various other ways.
- the light emitting diode 200 can also be used for transfer.
- the first parts 211a and 212a of the first and second chip electrodes 211 and 212 of the light emitting diode 200 and the second parts 62 of the third and fourth substrate electrode pads 60 and 70, 72) may be electrically connected to each other, the first and second wires 311 and 312 may be formed by photolithography.
- a photoresist film is applied to the upper surfaces of the insulating layer 40 and the plurality of light emitting diodes 200 .
- the photoresist film is dried (for example, dried by a soft bake method)
- a mask is aligned on the upper surface of the display panel 20, exposed through a plurality of openings formed in the mask, and then developed. Accordingly, a portion of the photoresist film, for example, a portion corresponding to a position where the first and second wires 311 and 312 are to be formed is removed.
- the photoresist may be formed of a positive photoresist in which a portion receiving light is removed.
- first and second wires 311 and 312 are deposited on the exposed portions.
- the first and second wires 311 and 312 are first portions 211a of the first and second chip electrodes 211 and 212 of the light emitting diode 200 by a chemical vapor deposition (CVD) method or a sputtering method. , 212a) and the second portions 62 and 72 of the third and fourth substrate electrode pads 60 and 70.
- the photoresist film remaining on the upper surface of the display panel 10 is removed.
- the photoresist may be removed by a method such as a liquid photoresist stripper, oxidizing the photoresist in an oxygen plasma system, etc., and the photoresist may be removed by various methods without being limited thereto.
- the substrate 20 used is first and second substrates provided on the bottom of the mounting groove 41.
- the two-chip electrodes 51 and 52 can be omitted.
- 11A to 11D are views illustrating different shapes of a first chip electrode and a second chip electrode of a light emitting diode according to various embodiments of the present disclosure.
- the light emitting diode 300 may have an approximately elliptical shape similar to the light emitting diode 200 described above.
- the first and second chip electrodes 311 and 312 may be disposed on both sides of the light emitting diode.
- the first and second chip electrodes 311 and 312 may be disposed on both sides of the light emitting diode in a substantially straight line shape.
- the first chip electrode 311 of the light emitting diode 300 includes a first part 311a disposed on the upper surface of the light emitting diode 300 and a second part 311b disposed on the side surface of the light emitting diode 300. can do.
- the third portion of the first chip electrode 311 may extend to the first portion 311a and be connected to the first semiconductor layer 201 (see FIG. 5 ) of the light emitting diode 300 .
- the second chip electrode 312 of the light emitting diode 300 includes a first part 312a disposed on the upper surface of the light emitting diode 300 and a second part 312b disposed on the side surface of the light emitting diode 300. can do.
- the third portion of the second chip electrode 312 may extend from the first portion 312a and be connected to the second semiconductor layer 203 (see FIG. 5 ) of the light emitting diode 300 .
- the light emitting diode 400 may have an approximately elliptical shape similar to the light emitting diode 200 described above.
- the first and second chip electrodes 411 and 412 may be disposed in a substantially arc shape along the rounded portions on opposite sides of the light emitting diode 400 .
- the first chip electrode 411 of the light emitting diode 400 includes a first part 411a disposed on the upper surface of the light emitting diode 400 and a second part 411b disposed on the side surface of the light emitting diode 400. can do.
- the third portion of the first chip electrode 411 may extend to the first portion 411a and be connected to the first semiconductor layer 201 of the light emitting diode 400 (see FIG. 5 ).
- the second chip electrode 412 of the light emitting diode 400 may include a first part 412a on the upper surface of the light emitting diode 400 and a second part 412b disposed on the side of the light emitting diode 400. have.
- a third portion (not shown) of the second chip electrode 412 may extend from the first portion 412a and be connected to the second semiconductor layer 203 (see FIG. 5 ) of the light emitting diode 400 .
- the light emitting diode 500 may have a substantially circular shape, different from the light emitting diode 200 described above, and may have a predetermined thickness.
- the first and second chip electrodes 511 and 512 may be disposed along the rounded portions on opposite sides of the light emitting diode 500 .
- the first chip electrode 511 of the light emitting diode 500 includes a first part 511a disposed on the upper surface of the light emitting diode 500 and a second part 511b disposed on the side surface of the light emitting diode 500. can do.
- the third portion of the first chip electrode 511 may extend to the first portion 511a and be connected to the first semiconductor layer 201 (see FIG. 5 ) of the light emitting diode 500 .
- the second chip electrode 512 of the light emitting diode 500 includes a first part 512a disposed on the upper surface of the light emitting diode 500 and a second part 512b disposed on the side surface of the light emitting diode 500. can do.
- the third portion of the second chip electrode 512 may extend from the first portion 512a and be connected to the second semiconductor layer 203 (see FIG. 5 ) of the light emitting diode 500 .
- the light emitting diode 600 may have a substantially rectangular shape and may have a predetermined thickness.
- the first and second chip electrodes 611 and 612 may be disposed along the rounded portions on opposite sides of the light emitting diode 600 .
- the first chip electrode 611 of the light emitting diode 600 includes a first part 511a disposed on the upper surface of the light emitting diode 600 and a second part 611b disposed on the side surface of the light emitting diode 600. can do.
- the third portion of the first chip electrode 611 may extend to the first portion 611a and be connected to the first semiconductor layer 201 (see FIG. 5 ) of the light emitting diode 600 .
- the second chip electrode 612 of the light emitting diode 600 includes a first part 612a disposed on the upper surface of the light emitting diode 600 and a second part 612b disposed on the side surface of the light emitting diode 600. can do.
- the third portion of the second chip electrode 612 may extend from the first portion 612a and be connected to the second semiconductor layer 203 (see FIG. 5 ) of the light emitting diode 600 .
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Abstract
Description
Claims (15)
- 발광 다이오드에 있어서,제1 반도체 층;상기 제1 반도체 층 상에 제공된 활성 층;상기 활성 층 상에 제공된 제2 반도체 층;상기 제2 반도체 층의 상면의 제1 부분과 상기 제2 반도체 층의 제1 측면의 일부를 덮는 제1 칩 전극; 및상기 제2 반도체 층의 상면의 제1 부분과 다른 상기 제2 반도체 층의 상면 의 제2 부분을 덮고, 상기 제2 반도체 층의 제1 측면과 다른 상기 제2 반도체 층의 제2 측면을 덮는 제2 칩 전극;을 포함하는 발광 다이오드.
- 제1항에 있어서,상기 제1 칩 전극은,상기 제2 반도체 층의 상면의 제1 부분을 덮는 제1 부분;상기 제1 칩 전극의 제1 부분에 연장되어 상기 제2 반도체 층의 제1 측면을 덮는 제2 부분; 및상기 제1 칩 전극의 제1 부분에 연장되어 상기 제1 반도체 층에 연결되는 제3 부분;을 포함하는 발광 다이오드.
- 제2항에 있어서,상기 제2 부분은 상기 활성 층의 측면 또는 상기 제1 반도체 층의 측면까지 연장되는 발광 다이오드.
- 제2항에 있어서,상기 제3 부분이 상기 제2 반도체층 및 상기 활성층과 직접 접촉하지 않도록, 상기 제1 칩 전극의 제3 부분과 상기 제2 반도체 층 사이 및 상기 제1 칩 전극의 제3 부분과 상기 활성 층 사이에 제공되는 절연 층을 더 포함하는 발광 다이오드.
- 제2항에 있어서,상기 제3 부분은 상기 제1 반도체 층에 도달하도록 상기 제2 반도체 층 및 상기 활성 층을 결합한 높이보다 크거나 같은 길이를 가지는 발광 다이오드.
- 제1항에 있어서,상기 제2 칩 전극은,상기 제2 반도체 층의 상면의 제2 부분을 덮는 제1 부분; 및상기 제2 칩 전극의 제1 부분에 연장되어 상기 제2 반도체 층의 제2 측면을 덮는 제2 부분;을 포함하는 발광 다이오드.
- 제6항에 있어서,상기 발광 다이오드는 상기 제2 반도체 층의 상면 및 상기 제2 반도체 층의 측면을 덮는 절연 막을 더 포함하며,상기 제2 칩 전극은 상기 제2 칩 전극의 제1 부분에 연장되어 상기 절연 막을 관통하여 상기 제2 반도체 층에 연결되는 제3 부분을 더 포함하는 발광 다이오드.
- 제1항에 있어서,상기 제1 칩 전극 및 상기 제2 칩 전극은 상기 발광 다이오드에 대하여 비대칭으로 배치되는 발광 다이오드.
- 제1항에 있어서,상기 제1 칩 전극 및 상기 제2 칩 전극은 상기 발광 다이오드에 대하여 대칭으로 배치되는 발광 다이오드.
- 디스플레이 모듈에 있어서,일면에 다수의 실장 홈을 가지는 기판;상기 다수의 실장 홈에 각각 실장되고 빛을 발하는 다수의 발광 다이오드; 및상기 다수의 발광 다이오드들의 구동 신호를 생성하는 구동 회로;를 포함하며,상기 발광 다이오드는,제1 반도체 층 및 제2 반도체층과, 상기 제1 반도체 층 및 상기 제2 반도체 층 사이에 제공된 활성 층과, 상기 제2 반도체 층의 상면의 제1 부분과 상기 제2 반도체 층의 제1 측면의 일부를 덮는 제1 칩 전극과, 상기 제2 반도체 층의 상면의 제1 부분과 다른 상기 제2 반도체 층의 상면의 제2 부분을 덮고 상기 제2 반도체 층의 제1 측면과 다른 상기 제2 반도체 층의 제2 측면을 덮는 제2 칩 전극을 포함하고,상기 다수의 실장 홈 각각은,상기 제1 칩 전극이 전기적으로 연결되는 제1 기판 전극 패드와, 상기 제2 칩 전극이 전기적으로 연결되는 제2 기판 전극 패드를 포함하는, 디스플레이 모듈.
- 제10항에 있어서,상기 제1 기판 전극 패드는,상기 대응하는 실장 홈의 일측 주변에 제공된 제1 부분; 및상기 제1 부분에 연장되어 상기 대응하는 실장 홈의 내주면까지 연장된 제2 부분;을 포함하는 디스플레이 모듈.
- 제11항에 있어서,상기 제1 기판 전극 패드는 상기 제1 부분 또는 상기 제 2 부분이 상기 제1 칩 전극과 전기적으로 연결되는 디스플레이 모듈.
- 제10항에 있어서,상기 제2 기판 전극 패드는,상기 대응하는 실장 홈의 일측 주변에 제공된 제1 부분; 및상기 제1 부분에 연장되어 상기 대응하는 실장 홈의 내주면까지 연장된 제2 부분;을 포함하는 디스플레이 모듈.
- 제13항에 있어서,상기 제1 기판 전극 패드는 상기 제1 부분 또는 상기 제 2 부분이 상기 제2 칩 전극과 전기적으로 연결되는 디스플레이 모듈.
- 제10항에 있어서,상기 제1 기판 전극 패드는 상기 제1 칩 전극과 전기적으로 비연결되는 부분이 절연 막에 의해 덮이고,상기 제2 기판 전극 패드는 상기 제2 칩 전극과 전기적으로 비연결되는 부분이 절연 막에 의해 덮이는 디스플레이 모듈.
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EP21940942.2A EP4258367A4 (en) | 2021-05-20 | 2021-11-08 | LIGHT EMITTING DIODE AND DISPLAY MODULE |
CN202180098047.4A CN117280481A (zh) | 2021-05-20 | 2021-11-08 | 发光二极管和使用该发光二极管的显示模块 |
US17/702,414 US20220376139A1 (en) | 2021-05-20 | 2022-03-23 | Light-emitting diode and display module using the same |
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KR1020210064782A KR20220157120A (ko) | 2021-05-20 | 2021-05-20 | 발광 소자 및 이를 이용한 디스플레이 모듈 |
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KR20060102657A (ko) * | 2005-03-24 | 2006-09-28 | 서울옵토디바이스주식회사 | 다수의 셀이 결합된 발광 소자 및 이의 제조 방법 |
KR20110078642A (ko) * | 2009-12-31 | 2011-07-07 | 주식회사 세미콘라이트 | 반도체 발광소자 |
KR20160002149A (ko) * | 2014-06-30 | 2016-01-07 | 서울바이오시스 주식회사 | 발광 다이오드 |
JP2018078310A (ja) * | 2011-09-16 | 2018-05-17 | ソウル バイオシス カンパニー リミテッドSeoul Viosys Co.,Ltd. | 発光ダイオード及びそれを製造する方法 |
KR20190073675A (ko) * | 2017-12-19 | 2019-06-27 | 엘지디스플레이 주식회사 | 발광 사운드 소자, 사운드 출력 장치 및 디스플레이 장치 |
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2021
- 2021-05-20 KR KR1020210064782A patent/KR20220157120A/ko unknown
- 2021-11-08 WO PCT/KR2021/016123 patent/WO2022244931A1/ko active Application Filing
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KR20060102657A (ko) * | 2005-03-24 | 2006-09-28 | 서울옵토디바이스주식회사 | 다수의 셀이 결합된 발광 소자 및 이의 제조 방법 |
KR20110078642A (ko) * | 2009-12-31 | 2011-07-07 | 주식회사 세미콘라이트 | 반도체 발광소자 |
JP2018078310A (ja) * | 2011-09-16 | 2018-05-17 | ソウル バイオシス カンパニー リミテッドSeoul Viosys Co.,Ltd. | 発光ダイオード及びそれを製造する方法 |
KR20160002149A (ko) * | 2014-06-30 | 2016-01-07 | 서울바이오시스 주식회사 | 발광 다이오드 |
KR20190073675A (ko) * | 2017-12-19 | 2019-06-27 | 엘지디스플레이 주식회사 | 발광 사운드 소자, 사운드 출력 장치 및 디스플레이 장치 |
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