WO2022224654A1 - Élément de détection de rayonnements, détecteur de rayonnements et dispositif de détection de rayonnements - Google Patents

Élément de détection de rayonnements, détecteur de rayonnements et dispositif de détection de rayonnements Download PDF

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WO2022224654A1
WO2022224654A1 PCT/JP2022/012397 JP2022012397W WO2022224654A1 WO 2022224654 A1 WO2022224654 A1 WO 2022224654A1 JP 2022012397 W JP2022012397 W JP 2022012397W WO 2022224654 A1 WO2022224654 A1 WO 2022224654A1
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radiation
layer
radiation detection
detection element
potential
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PCT/JP2022/012397
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English (en)
Japanese (ja)
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大輔 松永
幸治 石倉
聡史 大橋
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株式会社堀場製作所
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Priority to JP2023516349A priority Critical patent/JPWO2022224654A1/ja
Publication of WO2022224654A1 publication Critical patent/WO2022224654A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/223—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors

Definitions

  • the present invention relates to radiation detection elements, radiation detectors, and radiation detection apparatuses.
  • a radiation detection element using a semiconductor includes a flat semiconductor portion.
  • a doping layer doped with a dopant and made of a different type of semiconductor from the semiconductor portion is provided on the surface of the radiation detecting element.
  • a voltage is applied using the doping layer to generate an electric field inside the semiconductor portion.
  • Patent Document 1 discloses a radiation detecting element in which a metal layer is laminated on an insulating layer. The loss of sensitivity for detecting radiation is mitigated by the charge flowing through the metal layer.
  • the present invention has been made in view of such circumstances, and an object of the present invention is to provide a radiation detecting element, a radiation detector, and a radiation detecting apparatus capable of suppressing deterioration in radiation detection sensitivity. be.
  • a radiation detecting element is a radiation detecting element comprising a planar semiconductor portion, wherein the doping layer is provided on one surface of the semiconductor portion and is doped with a dopant and is made of a semiconductor of a type different from that of the semiconductor portion. and an insulating layer covering the doping layer, and a metal layer overlapping the insulating layer, wherein the potential of the doping layer and the potential of the metal layer are different.
  • a doping layer is provided on one surface of the semiconductor portion, the doping layer is covered with an insulating layer, and a metal layer overlaps the insulating layer.
  • a potential difference is generated. The potential difference facilitates transfer of charges from the insulating layer to the metal layer, reducing the number of charges staying in the insulating layer. Charges transferred to the metal layer are drained through the metal layer. Since the number of charges staying in the insulating layer is reduced, the charges in the semiconductor section are less likely to be attracted to the charges in the insulating layer. Since charges generated in the semiconductor portion by radiation are less likely to be attracted to charges in the insulating layer, a decrease in the intensity of the signal output from the radiation detection element is suppressed.
  • the component of the semiconductor portion is an n-type semiconductor
  • the component of the doping layer is a p-type semiconductor
  • the potential of the metal layer is lower than the potential of the doping layer. It is characterized by
  • the semiconductor section is made of an n-type semiconductor
  • the doping layer is made of a p-type semiconductor
  • the radiation detection element outputs a signal according to electrons generated in the semiconductor section. Since the potential of the metal layer is lower than the potential of the doping layer, holes generated in the insulating layer easily move to the metal layer. Since the number of holes in the insulating layer is reduced, the electrons in the semiconductor section are less likely to be attracted to the holes in the insulating layer. Since electrons generated in the semiconductor portion by radiation are less likely to be attracted to charges in the insulating layer, a decrease in the intensity of the signal output from the radiation detection element is suppressed.
  • the radiation detecting element according to the present invention is characterized in that a part of one surface of the semiconductor section is an incident area on which radiation is incident, and the doping layer is provided on the entire incident area.
  • a doping layer is provided on the entire incident region of the radiation incident on one surface of the semiconductor portion. Due to the doping layer, an electric field is generated in all areas where the radiation is incident in the semiconductor part, and charges are collected by the electric field. Electric charges generated in the semiconductor portion are efficiently collected by the electric field, and a signal having an intensity corresponding to the energy of the radiation incident on the semiconductor portion is output.
  • the radiation detection element according to the present invention further includes an electrode penetrating through the insulating layer and connected to the doping layer, and through the electrode, the potential of the doping layer is different from the potential of the metal layer. A voltage is applied.
  • the doping layer is connected to an electrode penetrating the insulating layer.
  • the potential of the doping layer and the potential of the metal layer can be set to different potentials.
  • the radiation detection element according to the present invention is characterized by being a silicon drift type radiation detection element.
  • the radiation detection element is a silicon drift type radiation detection element. Since the decrease in the intensity of the signal output from the radiation detection element is suppressed, the width of the peak included in the radiation spectrum is suppressed from widening toward the low energy side. It is possible to actually realize the feature of narrow peak width by using the silicon drift type radiation detection element.
  • a radiation detector according to the present invention is characterized by comprising the radiation detecting element according to the present invention, a substrate on which the radiation detecting element is mounted, and a housing that accommodates the radiation detecting element and the substrate.
  • the radiation detector according to the present invention is characterized in that the housing has an unclosed opening, and the radiation detection element is arranged at a position facing the opening.
  • the radiation incident on the radiation detection element does not need to pass through the opening and pass through the window material. Therefore, the radiation detector can detect radiation that cannot pass through the window material due to its low energy. Even when a large amount of low-energy radiation is incident on the radiation detecting element, a decrease in signal intensity is suppressed, so that the radiation detector can accurately detect low-energy radiation.
  • a radiation detection apparatus comprises an irradiation unit that irradiates a sample with radiation, a radiation detector according to the present invention that detects the radiation generated from the sample, and potentials of a doping layer and a metal layer of the radiation detection element. a voltage application unit that applies voltages to the radiation detection elements such that the voltages are different from each other; a spectrum generation unit that generates a spectrum of the radiation detected by the radiation detector; and a display that displays the spectrum generated by the spectrum generation unit. and a part.
  • the potential of the doping layer and the potential of the metal layer are set to different potentials. Therefore, a decrease in the intensity of the signal output by the radiation detector including the radiation detection element is suppressed, and a decrease in the radiation detection sensitivity of the radiation detection apparatus is suppressed.
  • the present invention a decrease in the intensity of the signal output by the radiation detection element and the radiation detector is suppressed. Therefore, the present invention exhibits excellent effects, such as suppressing a decrease in the sensitivity of the radiation detection device to detect radiation.
  • FIG. 1 is a schematic cross-sectional view of a radiation detection element
  • FIG. FIG. 4 is a schematic plan view of the radiation detection element viewed from the second surface side
  • 1 is a schematic cross-sectional view showing a configuration example of a radiation detector including radiation detection elements according to Embodiment 1.
  • FIG. 2 is a block diagram showing an example of functional configuration of a radiation detection apparatus
  • FIG. 7 is a schematic cross-sectional view showing a configuration example of a radiation detector according to Embodiment 2;
  • FIG. 1 is a schematic cross-sectional view of the radiation detection element 1.
  • the radiation detection element 1 is a silicon drift type radiation detection element.
  • the radiation detection element 1 has a flat plate shape as a whole.
  • the radiation detection element 1 includes a disk-shaped Si layer 11 made of Si (silicon).
  • the component of the Si layer 11 is, for example, n-type Si.
  • the Si layer 11 is a semiconductor portion.
  • the Si layer 11 has a first surface 111 and a second surface 112 located behind the first surface 111 .
  • the second surface 112 is an incident surface on which radiation mainly enters.
  • a signal output electrode 161 which is an electrode that outputs a signal during radiation detection.
  • the component of the signal output electrode 161 is Si of the same type as the Si layer 11, doped with a specific dopant such as phosphorus.
  • the component of the signal output electrode 161 is n+Si.
  • a plurality of curved electrodes 162 are provided on the first surface 111 in multiple ring shapes.
  • the composition of curved electrode 162 is a different type of Si than Si layer 11 .
  • the composition of the curvilinear electrode 162 is p-type Si, p+ Si doped with a particular dopant such as boron.
  • the plurality of curved electrodes 162 arranged in a ring shape are substantially concentric, and the signal output electrode 161 is positioned substantially at the center of the plurality of curved electrodes 162 . That is, the plurality of curved electrodes 162 surround the signal output electrode 161, and the distances between the signal output electrode 161 and each curved electrode 162 are different.
  • the shape of the curved electrode 162 may be a deformed circular ring shape or a partially cut shape. Multiple curvilinear electrodes 162 need not be concentric.
  • the signal output electrode 161 may be arranged at a position other than the center of the multiple curved electrodes 162 and may be arranged at a position other than the center of the first surface 111 .
  • a ground electrode 163 connected to a ground potential is provided outside the plurality of curved electrodes 162 .
  • the first surface 111 is covered with an insulating layer 17 made of Si oxide, nitride, or the like.
  • FIG. 2 is a schematic plan view of the radiation detection element 1 viewed from the second surface 112 side.
  • FIG. 1 shows a cross-sectional view cut along the two-dot chain line shown in FIG.
  • FIG. 2 shows an example in which the shape of the radiation detection element 1 is disc-shaped.
  • the shape of the radiation detection element 1 may be a shape other than a disk shape.
  • the shape of the radiation detection element 1 may be a droplet shape in plan view, or a plate shape having a polygonal shape such as a square, rectangle, trapezoid, or hexagon.
  • the second surface 112 is provided with the doping layer 12 doped with more dopants than the dopant contained in the Si layer 11 .
  • the composition of doping layer 12 is a different type of Si than Si layer 11 . If the component of the Si layer 11 is n-type Si, the component of the doping layer 12 is p-type Si, eg, p+Si.
  • a doping layer 12 is formed by implanting a dopant into the Si layer 11 .
  • a portion of the second surface 112 including the center of the second surface 112 is set as an incident area 113 on which radiation to be detected is incident.
  • the doping layer 12 is formed on most of the area including the center of the second surface 112 and provided on the entire incident area 113 .
  • a ground electrode 15 connected to a ground potential is provided between the edge of the doping layer 12 and the edge of the second surface 112 .
  • the ground electrode 15 has an annular shape in plan view.
  • the second surface 112 is covered with an insulating layer 13 made of Si oxide, nitride, or the like.
  • An insulating layer 13 covers the doping layer 12 and the ground electrode 15 .
  • a metal layer 14 overlaps the insulating layer 13 .
  • the metal layer 14 is a metal film made of metal such as Al (aluminum) or Au (gold). With the side of the Si layer 11 having the second surface 112 facing upward, the insulating layer 13 overlaps the doping layer 12 , and the metal layer 14 overlaps the insulating layer 13 .
  • the metal layer 14 is arranged at a position overlapping a portion including the center of the second surface 112 . As shown in FIG. 2, the metal layer 14 overlaps the doping layer 12 and occupies a smaller area than the doping layer 12 in plan view.
  • the doping layer 12 is connected to a through electrode 121 penetrating through the insulating layer 13 .
  • the through electrode 121 is made of metal.
  • the penetrating electrode 121 has a ring shape in which a part is divided in a plan view.
  • the through electrode 121 is positioned above the peripheral portion of the doping layer 12 .
  • the insulating layer 13 is penetrated by a ring-shaped through electrode 121 which is partially divided.
  • a through-electrode 121 is in contact with and connected to a ring-shaped portion of the doping layer 12 which is partially cut off.
  • the through electrode 121 substantially surrounds the metal layer 14 in plan view.
  • a part of the metal layer 14 is arranged at the position where the ring of the penetrating electrode 121 is divided.
  • the through electrode 121 is separated from the metal layer 14 .
  • An electrode 151 passing through the insulating layer 13 is in contact with and connected to the ground electrode 15 .
  • the electrode 151 is ring-shaped and surrounds the metal layer 14 and the through electrode 121 in plan view.
  • the electrode 151 is separated from the metal layer 14 and the through electrode 121 .
  • the through electrode 121 is connected to the voltage applying section 31 .
  • the doping layer 12 is connected to the voltage applying section 31 via the through electrode 121 .
  • the metal layer 14 is also connected to the voltage application section 31 .
  • the innermost curved electrode 162 and the outermost curved electrode 162 are connected to the voltage applying section 31 .
  • the voltage application unit 31 applies voltage so that the innermost curved electrode 162 has the highest potential and the outermost curved electrode 162 has the lowest potential.
  • the radiation detection element 1 is configured such that a predetermined electrical resistance is generated between the curved electrodes 162 adjacent to each other at different distances from the signal output electrode 161 . For example, by adjusting the composition of the portion located between adjacent curvilinear electrodes 162, an electrically resistive channel is formed in which two curvilinear electrodes 162 are connected. That is, the plurality of curved electrodes 162 are connected in a daisy chain via electrical resistance.
  • the curved electrodes 162 are sequentially applied from the outer curved electrode 162 to the inner curved electrode 162. It has a monotonically increasing potential. That is, the potential of the curved electrode 162 increases in order from the curved electrode 162 farther from the signal output electrode 161 toward the curved electrode 162 closer to the signal output electrode 161 .
  • a pair of adjacent curved electrodes 162 having the same potential may be included in the plurality of curved electrodes 162 .
  • an electric field (potential gradient) is generated in the Si layer 11 in which the potential is higher the closer to the signal output electrode 161 and the potential is lower the farther away from the signal output electrode 161 .
  • the voltage applying section 31 applies a voltage to the doping layer 12 so that the potential of the doping layer 12 is between the innermost curved electrode 162 and the outermost curved electrode 162 .
  • an electric field is generated inside the Si layer 11 in which the potential increases as the signal output electrode 161 is approached. Since the doping layer 12 is provided over the entire incident region 113, an electric field is generated in the entire area where the radiation in the Si layer 11 is incident.
  • the voltage application unit 31 applies a voltage to the doping layer 12 and the metal layer 14 such that the potential of the doping layer 12 and the potential of the metal layer 14 are different. More specifically, the voltage application section 31 applies a voltage to the doping layer 12 and the metal layer 14 such that the potential of the metal layer 14 is lower than the potential of the doping layer 12 .
  • the potential of metal layer 14 is ⁇ 7 V compared to the potential of doping layer 12 .
  • a potential difference is generated in which the potential of the metal layer 14 is lower than the potential of the doping layer 12 . Since the potential of the metal layer 14 is lower than the potential of the doping layer 12 , a pulling force acts on the positive charges generated inside the insulating layer 13 toward the metal layer 14 .
  • a preamplifier 21 is connected to the signal output electrode 161 .
  • Radiation such as X-rays, photons in general (including UV and visible light), electron beams or other charged particle beams are incident on the radiation detection element 1 .
  • the radiation enters the Si layer 11 mainly through the incident area 113 of the second surface 112 .
  • An amount of charge is generated in the Si layer 11 according to the energy of the radiation absorbed in the Si layer 11 .
  • the charges generated are electrons and holes.
  • the generated electric charges move due to the electric field inside the Si layer 11 , and one kind of electric charges intensively flows into the signal output electrode 161 .
  • the signal output electrode 161 is n-type, electrons generated by incident radiation move and flow into the signal output electrode 161 .
  • the charge that has flowed into the signal output electrode 161 is output as a current signal and input to the preamplifier 21 .
  • the preamplifier 21 converts the current signal into a voltage signal.
  • the preamplifier 21 outputs a signal having an intensity corresponding to the radiation energy. Since an electric field is generated within the Si layer 11 in the range where the radiation is incident, electrons efficiently flow into the signal output electrode 161, and a signal having an intensity corresponding to the energy of the radiation incident on the Si layer 11 is output. be.
  • the radiation detection element 1 When radiation enters the radiation detection element 1 , the radiation also enters the insulating layer 13 . Charges are generated in the insulating layer 13 by incident radiation.
  • the Si layer 11 When the Si layer 11 is of the n-type and the doping layer 12 is of the p-type, holes generated in the insulating layer 13 stay near the interface between the insulating layer 13 and the doping layer 12, and the accumulated holes enter the Si layer. Electrons in 11 may be attracted.
  • the electrons in the Si layer 11 are attracted to the holes in the insulating layer 13 , some of the electrons generated in the Si layer 11 by radiation do not flow into the signal output electrode 161 or are delayed. As a result, the intensity of the signal output by the signal output electrode 161 is reduced, leading to a reduction in radiation detection sensitivity.
  • a potential difference is generated that pulls the charges in the insulating layer 13 to the metal layer 14 . Since the potential of the metal layer 14 is lower than the potential of the doping layer 12 , a potential difference is generated that pulls the holes generated in the insulating layer 13 to the metal layer 14 . Some of the charges in insulating layer 13 may migrate to metal layer 14 . The potential difference that pulls the holes to the metal layer 14 facilitates the movement of holes from the insulating layer 13 to the metal layer 14 , increasing the percentage of holes in the insulating layer 13 that move to the metal layer 14 . .
  • the holes that have moved to the metal layer 14 pass through the metal layer 14 and flow to the voltage application section 31 . That is, the holes that have moved from the insulating layer 13 to the metal layer 14 are discharged to the outside of the radiation detecting element 1 . Thus, the ratio of holes discharged from the insulating layer 13 increases, and the number of holes staying in the insulating layer 13 decreases.
  • the electrons in the Si layer 11 are less likely to be attracted to the holes in the insulating layer 13 . Therefore, it is possible to prevent some of the electrons generated in the Si layer 11 by the radiation from not flowing into the signal output electrode 161 or from being delayed. Therefore, a decrease in the intensity of the signal output by the signal output electrode 161 is suppressed, and a decrease in radiation detection sensitivity is suppressed.
  • FIG. 3 is a schematic cross-sectional view showing a configuration example of the radiation detector 2 including the radiation detection element 1 according to the first embodiment.
  • the radiation detector 2 is an SDD (Silicon Drift Detector).
  • the radiation detector 2 has a housing 25 having a shape in which a truncated cone is connected to one end of a cylinder.
  • the housing 25 is configured by covering a plate-like bottom plate portion with a cap-like cover.
  • a window 26 through which radiation is transmitted is provided at the tip of the housing 25 .
  • the radiation detection element 1, the collimator 22, the substrate 23, the cooling part 28, and the cold finger 24 are arranged inside the housing 25, the radiation detection element 1, the collimator 22, the substrate 23, the cooling part 28, and the cold finger 24 are arranged.
  • the housing 25 accommodates the radiation detection element 1 , collimator 22 , substrate 23 and cooling section 28 .
  • the cooling part 28 is, for example, a Peltier element.
  • the radiation detection element 1 is mounted on the surface of the substrate 23 and arranged at a position facing the window 26 .
  • the radiation detection element 1 is arranged so that the first surface 111 faces the substrate 23 and the second surface 112 faces the window 26 .
  • the collimator 22 has a tubular shape with both ends opened, and is made of a radiation shielding material. Collimator 22 is arranged between radiation detection element 1 and window 26 . One end of the collimator 22 faces the window 26 and the other end faces the surface of the radiation detection element 1 . Radiation enters the housing 25 mainly through the window 26, and the collimator 22 partially shields the radiation. A portion of the second surface 112 other than the incident region 113 is covered with the collimator 22 that shields the radiation, and the radiation is not incident thereon. The incident area 113 is not covered with the collimator 22 and the radiation is incident thereon.
  • the radiation detection element 1 detects incident radiation that is not shielded by the collimator 22 .
  • Wiring is formed on the substrate 23 and the preamplifier 21 is mounted thereon. In FIG. 3, the preamplifier 21 is omitted.
  • the substrate 23 is in thermal contact with the heat absorbing portion of the cooling section 28 directly or via an intervening material.
  • a heat radiating portion of the cooling portion 28 is in thermal contact with the cold finger 24 .
  • the cold finger 24 has a flat portion with which the heat radiating portion of the cooling portion 28 is in thermal contact, and a portion penetrating through the bottom plate portion of the housing 25 .
  • the heat of the radiation detecting element 1 is absorbed by the cooling portion 28 through the substrate 23 , transmitted from the cooling portion 28 to the cold finger 24 , and radiated to the outside of the radiation detector 2 through the cold finger 24 .
  • the radiation detector 2 has a plurality of lead pins 27 penetrating through the bottom plate of the housing 25 .
  • the lead pins 27 are connected to the substrate 23 by a method such as wire bonding.
  • the application of voltage to the radiation detection element 1 by the voltage application unit 31 and the output of the signal from the preamplifier 21 are performed through the lead pin 27 .
  • the radiation detector 2 may further include other components.
  • FIG. 4 is a block diagram showing a functional configuration example of the radiation detection apparatus 10.
  • the radiation detection device 10 is, for example, a fluorescent X-ray analyzer.
  • the radiation detection apparatus 10 includes an irradiation unit 4 that irradiates a sample 6 with radiation such as electron beams or X-rays, a sample stage 5 on which the sample 6 is placed, and a radiation detector 2 .
  • the radiation detector 2 includes a radiation detection element 1 and a preamplifier 21 . A part of the preamplifier 21 may be included inside the radiation detector 2 and the other part may be arranged outside the radiation detector 2 .
  • the irradiation unit 4 irradiates the sample 6 with radiation, the sample 6 generates radiation such as fluorescent X-rays, and the radiation detector 2 detects the radiation generated from the sample 6 .
  • radiation is indicated by arrows.
  • the radiation detector 2 outputs a signal proportional to the energy of the detected radiation.
  • the radiation detection apparatus 10 may have a form in which the sample 6 is held by a method other than the method of placing it on the sample stage 5 .
  • a voltage application unit 31 and a signal processing unit 32 that processes the output signal are connected to the radiation detector 2 .
  • the voltage applying section 31 is connected to the radiation detecting element 1 and the signal processing section 32 is connected to the preamplifier 21 .
  • the radiation detector 2 outputs a signal having an intensity corresponding to the energy of the radiation.
  • the signal processing unit 32 detects the signal value corresponding to the energy of the radiation detected by the radiation detector 2 by detecting the intensity of the signal output by the radiation detector 2 .
  • An analysis unit 34 is connected to the signal processing unit 32 .
  • the analysis unit 34 includes a calculation unit that performs calculations and a memory that stores data.
  • the voltage application section 31 , signal processing section 32 , analysis section 34 and irradiation section 4 are connected to the control section 33 .
  • the control unit 33 controls operations of the voltage application unit 31 , the signal processing unit 32 , the analysis unit 34 and the irradiation unit 4 .
  • the signal processing unit 32 outputs data indicating the detected signal value to the analysis unit 34 .
  • the analysis unit 34 Based on the data from the signal processing unit 32, the analysis unit 34 counts the signals of each value and performs processing to generate the relationship between the energy of the radiation and the number of counts, that is, the spectrum of the radiation.
  • the signal processing section 32 and analysis section 34 correspond to the spectrum generation section.
  • the analysis unit 34 also performs qualitative analysis or quantitative analysis of the elements contained in the sample 6 based on the spectrum. Note that the signal processing unit 32 may generate the radiation spectrum.
  • a display unit 35 such as a liquid crystal display is connected to the analysis unit 34 .
  • the display unit 35 displays the spectrum generated by the analysis unit 34 and the analysis result by the analysis unit 34 .
  • the control unit 33 may be configured to receive a user's operation and control each unit of the radiation detection apparatus 10 according to the received operation. Also, the control unit 33 and the analysis unit 34 may be configured by the same computer.
  • the potential of the metal layer 14 is lower than the potential of the doping layer 12, thereby generating a potential difference that pulls holes generated in the insulating layer 13 to the metal layer 14. .
  • the potential difference makes it easier for holes to move from the insulating layer 13 to the metal layer 14 and reduces the number of holes staying in the insulating layer 13 . Since the number of holes staying in insulating layer 13 is reduced, electrons in Si layer 11 are less likely to be attracted to holes in insulating layer 13 . Even when a large amount of radiation is incident on the radiation detection element 1, the number of holes staying in the insulating layer 13 is small, and the electrons in the Si layer 11 are less likely to be affected by the holes in the insulating layer 13. .
  • Some of the electrons generated in the Si layer 11 by radiation are prevented from flowing into the signal output electrode 161 or from being delayed. Therefore, a decrease in the intensity of the signal output by the signal output electrode 161 is suppressed. Therefore, a decrease in the intensity of the signal output by the radiation detector 2 is suppressed, and a decrease in the radiation detection sensitivity of the radiation detection apparatus 10 is suppressed.
  • the radiation detection element 1 is a silicon drift type radiation detection element, the SN ratio (signal-to-noise ratio) of the output signal is high. As a result, the width of peaks included in the spectrum of radiation is narrowed.
  • the intensity of the signal output by the signal output electrode 161 is reduced due to the influence of the holes in the insulating layer 13, the energy of the radiation corresponding to the signal is measured lower than the actual value, and the width of the peak included in the spectrum is widens on the low-energy side.
  • the intensity of the signal output by the signal output electrode 161 is suppressed from being lowered, the width of the peak included in the spectrum is suppressed from widening toward the low energy side. It is possible to actually realize the feature of narrow peak width by using a silicon drift type radiation detection element, and highly accurate analysis becomes possible.
  • FIG. 5 is a schematic cross-sectional view showing a configuration example of the radiation detector 2 according to the second embodiment.
  • An opening 251 is formed in the truncated portion of the distal end of the housing 25 .
  • a window having a window material is not provided in the opening 251, and the opening 251 is not closed.
  • the radiation detection element 1 is arranged at a position facing the opening 251 so that the second surface 112 faces the opening 251 .
  • the configuration of other parts of the radiation detector 2 is the same as that of the first embodiment.
  • the configuration of portions other than the radiation detector 2 of the radiation detection apparatus 10 is the same as that of the first embodiment.
  • the radiation detection element 1 may also receive radiation that cannot pass through the window material due to its low energy. Radiation with relatively high energy is likely to enter deep portions of the radiation detecting element 1 , and radiation with relatively low energy is likely to generate charges near the surface of the radiation detecting element 1 . Therefore, the radiation that generates charges in the insulating layer 13 is low-energy radiation. When a large amount of low-energy radiation is incident on the radiation detecting element 1, the number of charges generated in the insulating layer 13 may increase.
  • the potential of the metal layer 14 is lower than the potential of the doping layer 12, the number of holes staying in the insulating layer 13 is reduced. Hardly attracted to holes. Therefore, it is possible to prevent some of the electrons generated in the Si layer 11 by the radiation from not flowing into the signal output electrode 161 or from being delayed. Therefore, even if a large amount of low-energy radiation is incident on the radiation detecting element 1, the intensity of the signal output from the signal output electrode 161 is suppressed from being lowered.
  • the radiation detector 2 can detect radiation that cannot pass through the window material due to its low energy.
  • the radiation detection apparatus 10 can detect an element whose fluorescent X-ray energy is low by detecting fluorescent X-rays with low energy. Even when a large amount of low-energy radiation is incident on the radiation detecting element 1, a decrease in signal intensity is suppressed, so the radiation detector 2 can accurately detect low-energy radiation.
  • a Peltier element is shown as an example of the cooling part 28, but the radiation detector 2 may be provided with a cooling part 28 other than a Peltier element.
  • the radiation detector 2 may have a configuration without the cold finger 24 or a configuration without the cooling unit 28 .
  • the Si layer 11 is made of n-type Si and the doping layer 12 is made of p-type Si.
  • a mode in which the doping layer 12 is made of n-type Si may be used. In this form, holes flow into the signal output electrode 161 and a signal is output.
  • the voltage application unit 31 applies a voltage to the doping layer 12 and the metal layer 14 such that the potential of the metal layer 14 is higher than the potential of the doping layer 12 .
  • a potential difference is generated that pulls the electrons generated in the insulating layer 13 to the metal layer 14 .
  • the potential difference makes it easier for electrons to move from the insulating layer 13 to the metal layer 14 and reduces the number of electrons staying in the insulating layer 13 .
  • Holes in the Si layer 11 are less likely to be attracted to electrons in the insulating layer 13, and a decrease in intensity of the signal output from the signal output electrode 161 is suppressed. Therefore, even in this form, a decrease in radiation detection sensitivity is suppressed.
  • the radiation detection element 1 is a silicon drift type radiation detection element. may be Therefore, the radiation detector 2 may be a radiation detector other than the SDD.
  • the sample 6 is irradiated with radiation and the radiation generated from the sample 6 is detected. It may be in the form of
  • the radiation detection device 10 may be configured to scan the sample 6 with radiation by changing the direction of the radiation.
  • the radiation detection apparatus 10 may be configured without the irradiation section 4 , the sample table 5 , the analysis section 34 , or the display section 35 .
  • radiation detection device 1 radiation detection element 11 Si layer (semiconductor portion) 12 doping layer 13 insulating layer 14 metal layer 2 radiation detector 25 housing 251 opening 31 voltage application unit 32 signal processing unit 34 analysis unit 35 display unit 4 irradiation unit 5 sample stage 6 sample

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  • Measurement Of Radiation (AREA)

Abstract

L'invention concerne un élément de détection de rayonnements, un détecteur de rayonnements et un dispositif de détection de rayonnements, qui permettent de supprimer la réduction de la sensibilité de détection de rayonnements.　Cet élément de détection de rayonnements, comprenant une partie semi-conductrice en forme de plaque plate, comprend : une couche de dopage, disposée sur une surface de la partie semi-conductrice, dopée par un dopant et comprenant un semi-conducteur d'un type différent de celui de la partie semi-conductrice; une couche d'isolation, qui recouvre la couche de dopage; et une couche métallique, déposée sur la couche d'isolation. Les potentiels électriques de la couche de dopage et de la couche métallique diffèrent.
PCT/JP2022/012397 2021-04-20 2022-03-17 Élément de détection de rayonnements, détecteur de rayonnements et dispositif de détection de rayonnements WO2022224654A1 (fr)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63156368A (ja) * 1986-12-19 1988-06-29 Shimadzu Corp 半導体放射線検出器
JP2004179290A (ja) * 2002-11-26 2004-06-24 Kansai Tlo Kk 半導体放射線検出器
WO2010113451A1 (fr) * 2009-04-03 2010-10-07 株式会社島津製作所 Détecteur de radiation, et dispositif d'imagerie de radiation équipé dudit détecteur
WO2019117272A1 (fr) * 2017-12-15 2019-06-20 株式会社堀場製作所 Élément de détection de rayonnement au silicium à diffusion, détecteur au silicium à diffusion et dispositif de détection de rayonnement
US20200333479A1 (en) * 2018-02-03 2020-10-22 Shenzhen Xpectvision Technology Co., Ltd. Methods of recovering radiation detector

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63156368A (ja) * 1986-12-19 1988-06-29 Shimadzu Corp 半導体放射線検出器
JP2004179290A (ja) * 2002-11-26 2004-06-24 Kansai Tlo Kk 半導体放射線検出器
WO2010113451A1 (fr) * 2009-04-03 2010-10-07 株式会社島津製作所 Détecteur de radiation, et dispositif d'imagerie de radiation équipé dudit détecteur
WO2019117272A1 (fr) * 2017-12-15 2019-06-20 株式会社堀場製作所 Élément de détection de rayonnement au silicium à diffusion, détecteur au silicium à diffusion et dispositif de détection de rayonnement
US20200333479A1 (en) * 2018-02-03 2020-10-22 Shenzhen Xpectvision Technology Co., Ltd. Methods of recovering radiation detector

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