WO2022218126A1 - Semiconductor heat treatment device - Google Patents

Semiconductor heat treatment device Download PDF

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Publication number
WO2022218126A1
WO2022218126A1 PCT/CN2022/082963 CN2022082963W WO2022218126A1 WO 2022218126 A1 WO2022218126 A1 WO 2022218126A1 CN 2022082963 W CN2022082963 W CN 2022082963W WO 2022218126 A1 WO2022218126 A1 WO 2022218126A1
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WO
WIPO (PCT)
Prior art keywords
process chamber
gas
exhaust
heat treatment
side wall
Prior art date
Application number
PCT/CN2022/082963
Other languages
French (fr)
Chinese (zh)
Inventor
杨慧萍
杨帅
Original Assignee
北京北方华创微电子装备有限公司
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Application filed by 北京北方华创微电子装备有限公司 filed Critical 北京北方华创微电子装备有限公司
Priority to KR1020237031885A priority Critical patent/KR20230144642A/en
Publication of WO2022218126A1 publication Critical patent/WO2022218126A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces

Definitions

  • the present invention relates to the field of semiconductor manufacturing, in particular, to a semiconductor heat treatment equipment.
  • the existing oven includes a box body 1, and the box body 1 has an upper cavity, a storage cavity 11 and a lower cavity arranged in sequence from top to bottom, wherein the upper cavity and The lower cavity is communicated with the storage cavity 11 through a plurality of first air holes 111; the storage cavity 11 is provided with a riser 12 and four brackets 13 for carrying semiconductor devices.
  • the upper cavity and the lower cavity communicate with each other, and the riser 12 is provided with a plurality of second air holes 121 for connecting the inside of the riser 12 with the storage cavity 11 .
  • a mounting groove 17 for accommodating the mounting frame 18 , the blower 10 and the air passage structure 16 is provided on one side of the box body 1 .
  • the output port of the blower 10 communicates with the air channel structure 16 through the air outlet pipe 15 , and the air channel structure 16 communicates with the upper cavity and the lower cavity; the input port of the blower 10 is connected with the installation frame 18 .
  • several electric heating pipes 19 are installed inside the installation frame 18 .
  • the hot air heated by the electric heating pipe 19 enters the upper cavity and the lower cavity through the blower 10, the air outlet pipe 15 and the air passage structure 16 in sequence, and then passes through the plurality of first air holes 111 and the riser pipes 12 and their respective
  • the second air hole 121 on the upper part enters the storage cavity 11 , so as to realize the baking of the semiconductor devices on each bracket 13 .
  • the process area inside the above-mentioned storage chamber 11 is not closed, this process area will be affected by the environment and surrounding devices and cannot meet the cleanliness requirements of the process, and it is impossible to control the particles of semiconductor devices.
  • the oxygen content in the process area is controlled. During the curing process, if the oxygen content in the process area is too high, the encapsulant will be oxidized, thereby affecting the performance of the chip.
  • the heat loss generated by the above-mentioned electric heating tube 19 is relatively large, and it is greatly affected by the external environment, resulting in low heating efficiency and poor temperature control accuracy.
  • the temperature uniformity in the storage cavity 11 is poor, so that incomplete curing may occur, and in severe cases, the problems of foaming of the encapsulant and uneven warping of the wafer may occur.
  • the present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a semiconductor heat treatment equipment, which can not only realize the control of the particle and oxygen content of the wafer, but also improve the temperature control accuracy and temperature uniformity , so that the chip performance can be guaranteed.
  • a semiconductor heat treatment equipment which includes: a process chamber, a heating drum, a wafer support assembly, an air inlet pipeline, an exhaust pipeline and a gas-liquid separation device, wherein,
  • the process chamber is provided with a process space for accommodating the wafer support assembly, the bottom is provided with an opening for the wafer support assembly to enter and exit, the top is provided with an exhaust port, and the bottom of the side wall of the process chamber is provided with an opening. Provided with an air inlet;
  • the wafer support assembly can be lifted and lowered, and the wafer support assembly is lifted into the process chamber to seal the opening;
  • the heating cylinder is sleeved on the process chamber for heating the process chamber;
  • the air inlet pipeline is communicated with the air inlet, and is used for delivering gas into the process space;
  • the exhaust pipeline is communicated with the exhaust port through the heating cylinder, and is used for exhausting the gas in the process space;
  • the gas-liquid separation device is communicated with the exhaust pipeline for liquefying and collecting process by-products in the gas discharged from the process space, and discharging the remaining gas.
  • the heating cylinder includes a thermal insulation shell and a plurality of heating units, the thermal insulation shell is sleeved on the process chamber, and the plurality of heating units are arranged on the thermal insulation shell opposite to the process chamber. On the inner sidewall of the process space, they are respectively used to heat a plurality of different areas in the process space;
  • the heat treatment equipment also includes a temperature detector and a control unit, wherein,
  • the temperature detector is used for real-time detection of the actual temperature values of a plurality of the regions in the process space corresponding to the plurality of the heating units, and sending them to the control unit;
  • the control unit is configured to adjust the output power of the corresponding heating unit according to the difference between the actual temperature values of the multiple areas, so that the temperatures of the multiple areas tend to be consistent.
  • the temperature detector includes a detection tube and a plurality of thermocouples arranged in the detection tube, wherein,
  • the detection tube is vertically arranged in the process space, and the upper end of the detection tube is close to the top of the process chamber, and the lower end of the detection tube penetrates the bottom of the side wall of the process chamber and extends to the outside of the process chamber;
  • the positions of the plurality of the thermocouples correspond to the plurality of the regions in one-to-one correspondence.
  • the thermal insulation shell includes a cylindrical side wall, a top cover and a thermal insulation jacket, wherein,
  • the cylindrical side wall is sleeved on the process chamber
  • the top cover is arranged on the top of the cylindrical side wall to block the opening at the top of the cylindrical side wall, and the top cover is provided with a through hole for the exhaust pipe to pass through ;
  • the heat preservation sleeve is arranged between the cylindrical side wall and the process chamber, and is close to the bottom of the cylindrical side wall, and is used to block the space between the cylindrical side wall and the process chamber the annular interval.
  • a spherical connector is provided at the exhaust port of the process chamber
  • the air inlet end of the exhaust pipeline is provided with a spherical flange, the spherical flange is matched and connected with the spherical connection head, and the air outlet end of the exhaust pipeline is communicated with the gas-liquid separation device.
  • the through hole on the top cover is further provided with a sealing structure
  • the sealing structure includes a first annular seal, a second annular seal and a fixing component, wherein the through hole is a stepped hole , the first annular seal is located in the stepped hole, sleeved on the spherical flange, and the outer diameter of the first annular seal is smaller than the diameter of the stepped hole below the stepped surface;
  • the A second annular seal is sleeved on the intake end of the exhaust pipe and is located on the stepped surface of the stepped hole.
  • the outer diameter of the second annular seal is smaller than that of the stepped hole located on the stepped surface. Aperture above the surface;
  • the fixing assembly is fixedly connected with the top cover, and presses the second annular sealing member and the first annular sealing member downwards, so that the two are compressed and deformed.
  • a plurality of exhaust heating elements are sequentially arranged on the exhaust pipeline along the gas discharge direction, which are respectively used to heat different regions of the exhaust pipeline in the gas discharge direction.
  • the exhaust pipeline includes a first transition pipe and a second transition pipe connected in sequence along the gas discharge direction, wherein the first transition pipe includes a first transition pipe connected in sequence along the gas discharge direction.
  • the second transition pipe is arranged vertically.
  • the bottom of the side wall of the process chamber is provided with a plurality of air inlets along the circumferential direction;
  • the air intake pipeline is arranged around the process chamber, at least one air intake end and a plurality of air outlet ends are arranged on the air intake pipeline, and the plurality of air outlet ends of the air intake pipeline are connected with the plurality of air intake ends.
  • the mouths are connected in a one-to-one correspondence;
  • the intake pipeline is covered with a preheating structure for preheating the gas in the intake pipeline.
  • the process chamber includes a process pipe and a manifold, wherein the bottom of the process pipe is open, and the top is provided with the exhaust port; the top of the manifold is open, and the bottom of the manifold is open.
  • the opening is formed, and the top end of the manifold is sealed with the bottom end of the process pipe; the bottom end of the manifold is connected to the wafer after the wafer support assembly is lifted into the process chamber.
  • the circular support assembly is sealed and connected to seal the opening at the bottom of the manifold; and the air inlet is provided on the side wall of the manifold.
  • the wafer support assembly includes a stacked wafer support, a thermal insulation structure and a process door, and after the wafer support assembly is lifted into the process chamber, the wafer support and the partition a thermal structure is located in the process space, and the process door is sealingly connected to the bottom end of the process chamber to seal the opening at the bottom of the process chamber;
  • the thermal insulation structure is used for thermal insulation of the space above it.
  • the heat insulating structure includes a heat insulating support and a plurality of heat insulating boards arranged on the heat insulating support, and the plurality of the heat insulating boards are arranged at intervals along the vertical direction.
  • the opening at the bottom of the process chamber can be sealed, so as to ensure the sealing of the process space, so as to meet the requirements of the process for cleanliness, and Capable of particle control of semiconductor devices; at the same time, the intake and exhaust pipes are connected to the intake port at the bottom of the sidewall of the process chamber and the exhaust port at the top of the process chamber respectively to achieve intake and exhaust. Exhaust, can control the oxygen content of the process space.
  • the temperature uniformity in the circumferential direction of the process space can be effectively improved, and at the same time, the heating cylinder is less affected by the external environment, so that the heating efficiency and temperature control accuracy can be improved.
  • the semiconductor heat treatment equipment provided by the embodiment of the present invention by combining the above-mentioned wafer support assembly, air inlet and exhaust pipes, and heating cylinder, not only can control the particle and oxygen content of the wafer, but also can increase the temperature Control accuracy and temperature uniformity, so as to ensure chip performance, especially to meet the comprehensive requirements of advanced packaging processes for temperature control, oxygen content control, particle control, etc.
  • Fig. 1 is the internal structure diagram of the existing oven
  • Fig. 2 is the internal structure diagram of the installation groove of the existing oven
  • Fig. 3 is the structure diagram of the installation frame of the existing oven
  • FIG. 4 is a cross-sectional view of a semiconductor heat treatment equipment provided by an embodiment of the present invention.
  • FIG. 5 is a cross-sectional view of a process chamber used in an embodiment of the present invention.
  • FIG. 6 is a cross-sectional view of a thermal insulation shell adopted in an embodiment of the present invention.
  • FIG. 7 is a partial cross-sectional view of a process chamber at its exhaust port used in an embodiment of the present invention.
  • FIG. 8 is a cross-sectional view of an exhaust pipeline used in an embodiment of the present invention.
  • FIG. 9 is a top cross-sectional view of a process chamber used in an embodiment of the present invention at its air inlet;
  • FIG. 10 is a cross-sectional view of an air intake pipeline installed on a chamber module adopted in an embodiment of the present invention.
  • FIG. 11 is a side cross-sectional view of the gas-liquid separation device used in the embodiment of the present invention.
  • an embodiment of the present invention provides a semiconductor heat treatment equipment, which can be applied to, for example, a curing process of encapsulant in the preparation process of advanced packaging equipment.
  • the semiconductor heat treatment equipment includes a process chamber 2 , a heating drum 3 , a wafer support assembly, an air inlet pipe, an exhaust pipe 4 and a gas-liquid separation device 5 .
  • the process chamber 2 is provided with a process space for accommodating the above-mentioned wafer support assembly, and the bottom of the process chamber 2 is provided with an opening for the wafer support assembly to enter and exit, and the top of the process chamber 2 is provided with an exhaust port, And the bottom of the side wall of the process chamber 2 is provided with an air inlet.
  • the above-mentioned wafer support assembly can be lifted and lowered, and the wafer support assembly is lifted into the process chamber 2 through the opening at the bottom of the process chamber 2 and then the opening is sealed.
  • the above-mentioned wafer support assembly may have various structures.
  • the above-mentioned wafer support assembly includes a wafer support 24 and a process gate 23, wherein the wafer support 24 is provided with a plurality of wafer bosses for supporting a plurality of wafer supports. Wafers 27, a plurality of wafers 27 are arranged at intervals along the vertical direction; and when the wafer holder 24 is located in the above-mentioned process space, the process gate 23 is sealedly connected with the bottom end of the process chamber 2 to seal the process chamber 2 bottom opening.
  • the wafer on the wafer holder 24 can be moved out or moved into the above-mentioned process space, and then the wafer can be moved out of or into the process space. Unloading.
  • the above-mentioned wafer support assembly further includes a heat insulation structure 242 , the heat insulation structure 242 is located between the wafer support 24 and the process door 23 for carrying the wafer support 24 and is connected with the above process door. 23 is connected.
  • the process door 23 is sealedly connected to the bottom end of the process chamber 2 to seal the opening at the bottom of the process chamber 2 .
  • the above-mentioned thermal insulation structure 242 is used to insulate the space above it, so as to further reduce the heat loss at the bottom of the process space, which is beneficial to improve the temperature uniformity of the process space.
  • the heat insulation structure 242 may have various structures.
  • the heat insulation structure 242 includes a heat insulation support 242a and a plurality of heat insulation boards 242b arranged on the heat insulation support 242a, and a plurality of heat insulation boards 242b are spaced apart in the vertical direction.
  • the above-mentioned heat insulating support 242 a is connected to the process door 23 and supports a plurality of wafer supports 24 .
  • the air inlet pipeline is communicated with the air inlet, and is used to deliver gas into the process space, for example, to deliver protective gas (eg nitrogen) into the process space during the curing process.
  • the exhaust pipe 4 passes through the above-mentioned heating cylinder 3 and communicates with the above-mentioned exhaust port, and is used for exhausting the gas in the above-mentioned process space (eg, protective gas containing process by-products).
  • the gas-liquid separation device 5 communicates with the above-mentioned exhaust pipeline 4, and is used for liquefying and collecting process by-products in the gas discharged from the process space, and discharging the remaining gas. With the aid of the gas-liquid separation device 5, the by-products of the process can be separated from the exhausted gas to ensure the cleanliness of the exhausted gas.
  • the process chamber 2 can have various structures.
  • the process chamber 2 includes a process pipe 21 and a manifold 22 , wherein the process pipe 21 has an open bottom and an open top.
  • the above-mentioned exhaust port 21a is provided; the top of the manifold 22 is open, and the bottom of the manifold 22 is open to form the above-mentioned opening for moving out or in of the wafer support assembly; the top of the manifold 22 is sealed with the bottom of the process pipe 21
  • the way of connection and sealing connection is, for example: the bottom end of the process pipe 21 and the top end of the manifold 22 are respectively provided with mutually butted flanges, and a sealing ring 29 is provided between the two flanges to align the two flanges. The gap between them is sealed.
  • the bottom end of the manifold 22 is sealedly connected to the wafer support assembly (eg, the process gate 23 ) after the above-mentioned wafer support assembly is lifted into the process chamber 2 .
  • the wafer support assembly eg, the process gate 23
  • the above-mentioned intake port is provided on the side wall of the manifold 22 .
  • the opening at the bottom of the process chamber is sealed, which can ensure the sealing of the process space, so as to meet the cleanliness requirements of the process and control the particles of semiconductor devices; at the same time, through
  • the intake line and the exhaust line are respectively communicated with the intake port located at the bottom of the side wall of the process chamber and the exhaust port located at the top of the process chamber to realize intake and exhaust, which can realize the oxygen content of the process space.
  • the air pressure in the process space can be controlled by controlling the gas flow rate of the air inlet pipeline into the process space, and by controlling the gas flow rate discharged from the process space by the exhaust line 4.
  • the pipeline 4 is used to replace the oxygen in the process space, so that the oxygen content in the process space can be controlled.
  • the semiconductor heat treatment equipment provided in the embodiment of the present invention may further include an oxygen analyzer 26, which is used to detect the oxygen content in the process space, so as to confirm whether the oxygen content in the process space meets the process requirements after the oxygen replacement is completed.
  • an oxygen analyzer 26 which is used to detect the oxygen content in the process space, so as to confirm whether the oxygen content in the process space meets the process requirements after the oxygen replacement is completed.
  • the semiconductor heat treatment equipment provided by the embodiments of the present invention can realize particle control of semiconductor devices on the basis of controlling the oxygen content of the process space, because in a low oxygen environment, particles generated due to oxidation can be reduced
  • the above-mentioned exhaust pipeline 4 can also discharge the by-products generated in the process in the process space. It can be seen from this that by using the above-mentioned wafer support assembly and the air inlet pipeline and the exhaust pipeline in combination, the particle and oxygen content control of the wafer can be realized, especially the requirements for oxygen content control and particle control in the advanced packaging process can be met. Comprehensive needs.
  • the heating cylinder 3 is sleeved on the process chamber 2 , that is, arranged around the process tube 21 , for heating the process chamber 2 .
  • the temperature uniformity in the circumferential direction of the process space 2 can be effectively improved, and at the same time, the heating cylinder 3 is less affected by the external environment, so that the heating efficiency and Temperature control accuracy.
  • the heating cylinder 3 includes a thermal insulation shell 32 and a plurality of heating units 31, wherein the thermal insulation shell 32 is sleeved on the process chamber 2; On the inner sidewall, they are used to heat a number of different areas in the process space. For example, four areas (A-D) are shown in FIG. 4, and the four areas (A-D) are distributed in the vertical direction. Correspondingly, there are four heating units 31, which are one with the four areas (A-D). One correspondence, to heat the four zones (A-D) independently. In this way, the temperature uniformity in the circumferential and axial directions of the process space can be effectively improved. At the same time, with the help of the thermal insulation casing 32, the heat loss of the heating unit 31 can be reduced, and the influence of the external environment can be avoided, so that the heating efficiency and the temperature control accuracy can be improved.
  • the semiconductor heat treatment equipment further includes a temperature detector 33 and a control unit (not shown in the figure), wherein the above-mentioned temperature detector 33 is used to detect the above-mentioned temperature in real time.
  • the actual temperature values of the multiple areas in the process space corresponding to the multiple heating units 31 are sent to the control unit; the control unit is used to adjust the corresponding heating according to the difference between the actual temperature values of the multiple areas The output power of the unit 31 so that the temperature of the multiple regions tends to be uniform. Taking the four regions (A-D) shown in FIG.
  • control unit calculates and obtains the output power of each heating unit 31 according to the actual temperature values of the four regions (A-D) detected by the temperature detector 33 using a specified algorithm, For example, for regions A and D near the top and bottom of the process space, since they are more susceptible to environmental influences and generate more heat loss, their output power should be greater than that of regions B and C, so that regions A and D can be compared with regions The temperature difference between B and C is controlled within the allowable temperature difference range.
  • the above-mentioned temperature detector 33 may have various structures.
  • the temperature detector 33 includes a detection tube 331 and a plurality of thermocouples 332 arranged in the detection tube 331 , wherein the detection tube 331 is vertical is arranged in the above-mentioned process space, and the upper end of the detection tube 331 is close to the top of the process space, and the lower end of the detection tube 331 penetrates the bottom of the side wall of the process chamber 2 (for example, the manifold 22), and extends to the outside of the process chamber 2;
  • the positions of the plurality of thermocouples 332 correspond to the plurality of regions one-to-one, and the wires of the plurality of thermocouples 332 are all drawn out from the lower end of the detection tube.
  • each heating unit 31 includes a heating wire embedded on the inner side wall of the cylindrical side wall 321 and wound around the axial direction of the cylindrical side wall 321 .
  • the heating wires are independent of each other, so that the magnitude of the current or voltage thereof can be individually controlled.
  • the heating unit 31 may also adopt any other heating element capable of generating heat.
  • the heating unit 31 is not limited to being embedded in the inner side wall of the cylindrical side wall 321 , as long as the cylindrical side wall 321 can keep the heating unit 31 warm.
  • the top cover 322 is disposed on the top of the cylindrical side wall 321 to block the opening at the top of the cylindrical side wall 321, and the top cover 322 is provided with a through hole 322a for the exhaust pipe 4 to pass through. .
  • the exhaust line 4 can be connected to the exhaust port 21a of the process chamber 2, and the heat generated by the heating unit 31 can be prevented from being lost from the top opening under the conduction of the ambient air flow, thereby ensuring the temperature control effect.
  • the above-mentioned thermal insulation sleeve 323 is disposed between the above-mentioned cylindrical side wall 321 and the process chamber 2 (ie, the manifold 22 ), and is close to the bottom of the cylindrical side wall 321 , and is used to block the cylindrical side wall 321 and the process chamber.
  • the annular space between 2 can prevent the heat generated by the heating unit 31 from being lost from the annular space, thereby ensuring the temperature control effect.
  • the exhaust port of the process chamber 2 is provided with a spherical connector 422;
  • the air inlet end of the pipeline 4 is provided with a spherical flange 421 , and the spherical flange 421 is connected with the spherical joint 422 .
  • the spherical flange 421 is connected with the spherical joint 422, and the inner spherical surface of the spherical flange 421 can rotate relative to the outer spherical surface of the spherical joint 422 and rotate around the spherical center of the outer spherical surface, thereby changing the relative position of the exhaust pipe 4 to the spherical surface.
  • the angle of the process chamber 2, that is, the angle of the exhaust pipe 4 can be adjusted, so as to facilitate the installation and realize the flexible connection at the same time.
  • connection method between the spherical flange 421 and the exhaust pipe 4 is integrally formed or welded, for example; the connection method between the spherical connection head 422 and the process chamber 2 (ie, the process pipe 22 ) is integrally formed, for example. Or welding, etc.
  • other flexible connection or universal connection can also be used between the intake end of the exhaust pipe 4 and the exhaust port of the process chamber 2, as long as the angle of the exhaust pipe 4 can be achieved Adjustable.
  • the gas outlet end of the exhaust pipe 4 is communicated with the gas-liquid separation device 5 .
  • the through hole 322a on the top cover 322 is also provided with a sealing structure 7, and the sealing structure 7 includes a first annular sealing member 71, a second annular sealing member 72 and a fixing component 73.
  • the above-mentioned top cover The above-mentioned through hole 322a in 322 is a stepped hole, and the first annular seal 71 is located in the stepped hole and is sleeved on the spherical flange 421.
  • a boss 421a can be set on the spherical flange 421, the boss For example, 421a is located at one end of the spherical flange 421 away from the exhaust pipe 4, and protrudes relative to the outer spherical surface of the spherical flange 421.
  • the first sealing member 71 is superimposed on the boss 421a, and the The outer diameter is smaller than the hole diameter (ie, the minimum diameter) of the stepped hole below its stepped surface, so as to avoid the hole wall from being worn due to contact with the first sealing member 71 ; the above-mentioned second annular sealing member 72 is sleeved on the exhaust pipe 4 .
  • the outer diameter of the second annular seal 72 is smaller than the diameter of the stepped hole above the stepped surface (ie, the maximum diameter), so as to avoid the hole wall due to The two seals 72 contact and wear.
  • the above-mentioned fixing component 73 is fixedly connected with the top cover 322, and presses the second annular sealing member 72 and the first annular sealing member 71 downwardly so as to cause compression deformation of the two. That is to say, the vertical distance between the fixing assembly 73 and the above-mentioned boss 421a is smaller than the sum of the thicknesses of the second sealing member 72 and the first sealing member 71 in the original state, so that the second annular sealing member 72 and the first sealing member 71 are in the original state.
  • An annular seal 71 is compressed and deformed, so that it can perform a sealing function. Since the top temperature of the process chamber 2 is relatively high, in order to ensure the thermal insulation effect, optionally, both the second annular seal 72 and the first annular seal 71 are made of high temperature resistant flexible materials such as refractory fiber materials.
  • the compression amount of the first annular seal 71 is greater than the compression amount of the second annular seal 72 . Since the compression amount of the first annular seal 71 is larger, the pressing force acting on the boss 421a is larger, which makes the sealing between the spherical flange 421 and the spherical joint 422 more reliable. Meanwhile, since the compression amount of the second annular seal 72 is small (eg, 0-3 mm), this can prevent the stepped surface of the stepped hole from being damaged due to excessive pressure.
  • the components are respectively used to heat different regions of the exhaust pipe 4 in the above-mentioned gas discharge direction.
  • the process by-products can be kept in a gaseous state, preventing non-gaseous process by-products from clogging the exhaust pipeline 4, and allowing the self-exhaust pipeline 4 to flow into the exhaust pipeline 4.
  • the temperature of the gas in the gas-liquid separation device 5 is more conducive to rapid liquefaction, thereby improving the liquefaction efficiency.
  • the above-mentioned exhaust pipe 4 includes a first transition pipe 41a and a second transition pipe 41b connected in sequence along the gas discharge direction, wherein , the first transition pipe 41a includes a first vertical section 411, an inclined section 412 and a second vertical section 413 connected in sequence along the gas discharge direction.
  • the gas inlet end of the inclined section 412 is higher than the gas outlet end of the inclined section 412, and the inclined section
  • the inclination angle of 412 with respect to the horizontal plane is, for example, 5°.
  • the above-mentioned second transition pipe 41b is arranged vertically so as to be connected with the gas-liquid separation device 5 .
  • the above-mentioned first vertical section 411 and second vertical section 413 are respectively used to realize the connection with the process chamber 2 and the second transition pipe 41b.
  • first transition tube 41a is closer to the cavity assembly 2, it is preferably a high temperature resistant tube such as a quartz tube; while the second transition tube 41b can be a metal tube with lower cost.
  • the above-mentioned exhaust heating elements are two, which are a first exhaust heating element 81 and a second exhaust heating element 82 respectively.
  • the exhaust heating element 81 covers the first transition pipe 41a for heating the first transition pipe 41a; the second exhaust heating element 82 covers the second transition pipe 41b for heating the second transition pipe 41b
  • the transition pipe 41b is heated.
  • the heating temperature of the first exhaust heating element 81 is higher than the heating temperature of the second exhaust heating element 82, and the heating temperature of the first exhaust heating element 81 is higher than the gasification temperature of the process by-products (eg, 350°C).
  • the heating temperature of the second exhaust heating element 82 is lower than the gasification temperature of the process by-products (eg, 250 °C), so that it can be ensured that the first transition tube 41a is still a horizontal tube.
  • the process by-products therein have sufficient fluidity, and the temperature of the exhaust gas flowing into the gas-liquid separation device 5 from the second transition pipe 41b can be more conducive to rapid liquefaction, thereby improving the liquefaction efficiency.
  • a heat preservation member 83 is further provided at the connection between the first transition pipe 41a and the second transition pipe 41b, so as to avoid heat loss at the connection.
  • a sealing member is further provided between the first transition pipe 41a and the second transition pipe 41b, and the temperature resistance temperature of the sealing member is, for example, 300° C. or lower.
  • the heating temperature of the above-mentioned second exhaust heating element 82 should be lower than the temperature resistance temperature to avoid failure of the sealing element.
  • the bottom of the side wall of the process chamber 2 (for example, the manifold 22 ) is provided with a plurality of air inlets in the circumferential direction; and the air inlet pipeline is arranged around the process chamber 2 , and the air inlet pipeline is provided with At least one air inlet end and a plurality of air outlet ends, and the plurality of air outlet ends of the air inlet pipeline communicate with the plurality of air inlet ports in one-to-one correspondence.
  • the intake pipe 9 is provided with an intake end 911 for connecting with the air source, and the intake pipe 9 is also provided with two outlet ends 912, which are respectively connected to the air source.
  • the intake pipe 9 is a semicircular pipe, and the intake end 911 is located in the middle of the intake pipe 9, and the two outlet ends 912 are located at both ends of the intake pipe 9.
  • the gas entering the air inlet pipeline 9 from the end 911 will be divided into two paths to flow toward the two air outlet ends 912 respectively, and enter the process chamber 2 through the two air outlet ends 912 at the same time, so that the uniformity of air intake can be improved.
  • the air inlet pipeline 9 is covered with a preheating structure 92, and the preheating structure 92 is used to heat the gas in the air inlet pipeline 9, so that the process gas can be preheated before it enters the process space.
  • the gas temperature provided by the gas source is generally 20°C and the flow rate is relatively large, the temperature is far lower than the temperature of the process space, so that if the gas directly enters the process space, it will take away a large amount of heat at the bottom of the process space, thus affecting the temperature uniformity. Therefore, by using the preheating structure 92 to preheat the gas before it enters the process space, the influence of the gas temperature difference on the bottom temperature region of the process space can be improved, thereby improving the temperature uniformity.
  • the preheating structure 92 can have various structures, for example, including an intake air heating element covering the intake pipe 9 and a temperature detecting element (not shown in the figure) for detecting the temperature of the gas in the intake pipe 9 . .
  • the temperature of the gas in the intake pipeline 9 is detected by the temperature detecting element, so that the temperature of the intake gas can be precisely controlled to meet the technological requirements.
  • the temperature of the gas in the inlet line 9 is made consistent with the process temperature in the process space.
  • the above-mentioned air intake heating element is also covered with a heat insulating element to reduce heat loss and improve preheating efficiency, and the heat insulating element is made of insulating material such as silica gel or refractory fiber, for example.
  • the above-mentioned gas-liquid separation device 5 includes, for example, a gas-liquid separation component 51 , a liquid collecting container 52 , a liquid pipeline 53 respectively connected to the two, and an on-off valve 54 provided on the liquid pipeline 53 .
  • the gas-liquid separation component 51 is connected to the above-mentioned exhaust pipeline 4, and is used to cool the process by-products in the gas discharged from the process space to liquefy them, separate them from the discharged gas and flow into the liquid collection Vessel 52, thereby enabling the liquefaction and collection of the above-mentioned process by-products.
  • the separated clean gas will be discharged into the extraction device, which can be used for factory exhaust pipes, etc.
  • the gas-liquid separation assembly 51 is a condensing pipe for conveying waste gas.
  • the exhaust gas is condensed, and since the condensation pipe is vertical, this allows the condensed liquid to separate from the exhaust gas under its own gravity.
  • a convex structure 511 is provided on the inner wall of the condensing pipe, and the convex structure 511 includes a slope opposite to the conveying direction of the exhaust gas in the condensing pipe and inclined with respect to the axis of the condensing pipe, so as to increase the contact between the condensing pipe and the exhaust gas area, thereby enhancing the condensation effect of the condensation pipe.
  • the inclined surface By making the inclined surface opposite to the conveying direction of the exhaust gas in the condensing pipe, it can be ensured that the inclined surface can be in contact with the exhaust gas, so as to realize the cooling of the exhaust gas. At the same time, by inclining the inclined surface with respect to the axis of the condensation duct, it is possible to avoid disturbing the airflow and at the same time prevent the flow of the condensed liquid from being obstructed.
  • the structure of the above-mentioned raised structure 511 can be various, for example, the raised structure includes a plurality of sheet-like protrusions arranged in an array on the inner wall of the condensing pipe, and each sheet-like protrusion (the plane where it is located) is opposite to the condensing pipe.
  • the inner wall is inclined downward, that is, the top surfaces of the plurality of sheet-like protrusions form the aforementioned inclined surfaces.
  • the opening at the bottom of the process chamber can be sealed, which can ensure the tightness of the process space and can satisfy the requirements for cleanliness of the process.
  • the air inlet pipeline and the exhaust pipeline are used to communicate with the air inlet at the bottom of the side wall of the process chamber and the exhaust port at the top of the process chamber, respectively.
  • the oxygen content of the process space can be controlled.
  • the temperature uniformity in the circumferential direction of the process space can be effectively improved, and at the same time, the heating cylinder is less affected by the external environment, so that the heating efficiency and temperature can be improved. control precision.
  • the semiconductor heat treatment equipment provided by the embodiment of the present invention by combining the above-mentioned wafer support assembly, air inlet and exhaust pipes, and heating cylinder, not only can control the particle and oxygen content of the wafer, but also can increase the temperature Control accuracy and temperature uniformity, so as to ensure chip performance, especially to meet the comprehensive requirements of advanced packaging processes for temperature control, oxygen content control, particle control, etc.

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Abstract

Provided in an embodiment of the present invention is a semiconductor heat treatment device. A process space for accommodating a wafer support assembly is arranged in a process chamber, an opening allowing entry and exit of the wafer support assembly is arranged at a bottom part thereof, a gas exhaust opening is arranged at a top part thereof, and a gas inlet is arranged at a bottom part of a side wall of the process chamber; the wafer support assembly can be raised and lowered, and once the wafer support assembly is lifted into the process chamber, the described opening can be sealed; a heating cylinder is sleeved on the process chamber and is used for heating the process chamber; a gas intake pipeline is in communication with the gas inlet and is used to deliver a gas into the process space; a gas exhaust pipeline passes through the heating cylinder and establishes communication with the gas exhaust opening, and said pipeline is used for removing a gas within the process space; a gas-liquid separation apparatus is in communication with the gas exhaust pipeline and is used for liquefaction and collection of a process byproduct in a gas removed from the process space, and removing the remaining gas. The semiconductor heat treatment device in an embodiment of the present invention can achieve particle and oxygen content control for a wafer, and improves temperature control precision and temperature uniformity.

Description

半导体热处理设备Semiconductor heat treatment equipment 技术领域technical field
本发明涉及半导体制造领域，具体地，涉及一种半导体热处理设备。The present invention relates to the field of semiconductor manufacturing, in particular, to a semiconductor heat treatment equipment.
背景技术Background technique
随着芯片前道制程不断缩微，先进封装设备也在不断向更小尺寸发展，这就对先进封装设备在更小线宽处理、颗粒控制、工艺精度控制等方面提出了更高的要求。而对于固化工艺，目前是采用烘烤箱加热封装胶，但是传统的烘烤箱的温度控制、氧含量控制、颗粒控制等已经无法满足先进封装制程的需求。As the chip front-end process continues to shrink, advanced packaging equipment is also developing to smaller sizes, which puts forward higher requirements for advanced packaging equipment in terms of smaller line width processing, particle control, and process precision control. For the curing process, an oven is currently used to heat the encapsulant, but the traditional oven temperature control, oxygen content control, particle control, etc. can no longer meet the needs of advanced packaging processes.
请一并参阅图1至图3，现有的烘烤箱包括箱体1，该箱体1内部具有由上而下依次设置的上空腔、置物腔11和下空腔，其中，上空腔和下空腔均通过多个第一气孔111与置物腔11相连通；该置物腔11中设置有立管12及用于承载半导体器件的四个托架13，该立管12的两端分别与上空腔和下空腔相连通，且立管12上设置有多个第二气孔121，用以将立管12的内部与置物腔11相连通。如图2所示，在箱体1的一侧设置有用于容纳安装框架18、鼓风机10和气道结构16的安装槽17。其中，鼓风机10的输出口通过出气管15与气道结构16相连通，该气道结构16与上空腔和下空腔相连通；鼓风机10的输入口与安装框架18连接。如图3所示，安装框架18内侧安装有若干电热管19。在进行热处理工艺时，经由电热管19加热产生的热空气依次经由鼓风机10、出气管15和气道结构16进入上空腔和下空腔，再分别经由多个第一气孔111以及立管12及其上的第二气孔121进入置物腔11中，从而实现对各个托架13上的半导体器件进行烘烤。Please refer to FIG. 1 to FIG. 3 together. The existing oven includes a box body 1, and the box body 1 has an upper cavity, a storage cavity 11 and a lower cavity arranged in sequence from top to bottom, wherein the upper cavity and The lower cavity is communicated with the storage cavity 11 through a plurality of first air holes 111; the storage cavity 11 is provided with a riser 12 and four brackets 13 for carrying semiconductor devices. The upper cavity and the lower cavity communicate with each other, and the riser 12 is provided with a plurality of second air holes 121 for connecting the inside of the riser 12 with the storage cavity 11 . As shown in FIG. 2 , a mounting groove 17 for accommodating the mounting frame 18 , the blower 10 and the air passage structure 16 is provided on one side of the box body 1 . Wherein, the output port of the blower 10 communicates with the air channel structure 16 through the air outlet pipe 15 , and the air channel structure 16 communicates with the upper cavity and the lower cavity; the input port of the blower 10 is connected with the installation frame 18 . As shown in FIG. 3 , several electric heating pipes 19 are installed inside the installation frame 18 . During the heat treatment process, the hot air heated by the electric heating pipe 19 enters the upper cavity and the lower cavity through the blower 10, the air outlet pipe 15 and the air passage structure 16 in sequence, and then passes through the plurality of first air holes 111 and the riser pipes 12 and their respective The second air hole 121 on the upper part enters the storage cavity 11 , so as to realize the baking of the semiconductor devices on each bracket 13 .
上述烘烤箱在实际应用中不可避免地存在以下问题：The above-mentioned oven inevitably has the following problems in practical application:
其一，由于上述置物腔11内部的工艺区域是非封闭的，这使得该工艺区域会受环境及周围器件的影响而无法满足工艺对洁净度的要求，无法对半导体器件进行颗粒控制，同时也无法对该工艺区域的氧含量进行控制，在进行固化工艺时，若工艺区域中的氧含量过高会造成封装胶氧化，从而影响芯片性能。First, because the process area inside the above-mentioned storage chamber 11 is not closed, this process area will be affected by the environment and surrounding devices and cannot meet the cleanliness requirements of the process, and it is impossible to control the particles of semiconductor devices. The oxygen content in the process area is controlled. During the curing process, if the oxygen content in the process area is too high, the encapsulant will be oxidized, thereby affecting the performance of the chip.
其二，上述电热管19产生的热量损耗较大，而且受外界环境影响较大，导致加热效率较低，且温度控制精度较差，同时由于该电热管19位于置物腔11一侧，这会导致置物腔11内的温度均匀性较差，从而可能发生不完全固化，严重时会造成封装胶起泡、晶片翘曲不平等的问题。Second, the heat loss generated by the above-mentioned electric heating tube 19 is relatively large, and it is greatly affected by the external environment, resulting in low heating efficiency and poor temperature control accuracy. As a result, the temperature uniformity in the storage cavity 11 is poor, so that incomplete curing may occur, and in severe cases, the problems of foaming of the encapsulant and uneven warping of the wafer may occur.
发明内容SUMMARY OF THE INVENTION
本发明旨在至少解决现有技术中存在的技术问题之一，提出了一种半导体热处理设备，其不仅可以实现晶圆的颗粒和含氧量控制，而且还可以提高温度控制精度和温度均匀性，从而可以保证芯片性能。The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a semiconductor heat treatment equipment, which can not only realize the control of the particle and oxygen content of the wafer, but also improve the temperature control accuracy and temperature uniformity , so that the chip performance can be guaranteed.
为实现本发明的目的而提供一种半导体热处理设备，包括：工艺腔室、加热筒、晶圆支撑组件、进气管路、排气管路和气液分离装置，其中，In order to achieve the purpose of the present invention, a semiconductor heat treatment equipment is provided, which includes: a process chamber, a heating drum, a wafer support assembly, an air inlet pipeline, an exhaust pipeline and a gas-liquid separation device, wherein,
所述工艺腔室中设置有用于容纳所述晶圆支撑组件的工艺空间，底部设置有供所述晶圆支撑组件进出的开口，顶部设置有排气口，所述工艺腔室侧壁的底部设置有进气口；The process chamber is provided with a process space for accommodating the wafer support assembly, the bottom is provided with an opening for the wafer support assembly to enter and exit, the top is provided with an exhaust port, and the bottom of the side wall of the process chamber is provided with an opening. Provided with an air inlet;
所述晶圆支撑组件可升降，所述晶圆支撑组件升入所述工艺腔室中后密封所述开口；The wafer support assembly can be lifted and lowered, and the wafer support assembly is lifted into the process chamber to seal the opening;
所述加热筒套设在所述工艺腔室上，用于加热所述工艺腔室；the heating cylinder is sleeved on the process chamber for heating the process chamber;
所述进气管路与所述进气口连通，用于向所述工艺空间中输送气体；The air inlet pipeline is communicated with the air inlet, and is used for delivering gas into the process space;
所述排气管路穿过所述加热筒与所述排气口连通，用于排出所述工艺空间中的气体；The exhaust pipeline is communicated with the exhaust port through the heating cylinder, and is used for exhausting the gas in the process space;
所述气液分离装置与所述排气管路连通，用于液化并收集从所述工艺空间中排出的气体中的工艺副产物，并排出剩余的气体。The gas-liquid separation device is communicated with the exhaust pipeline for liquefying and collecting process by-products in the gas discharged from the process space, and discharging the remaining gas.
可选的，所述加热筒包括保温外壳和多个加热单元，所述保温外壳套设在所述工艺腔室上，所述多个加热单元设置在所述保温外壳与所述工艺腔室相对的内侧壁上，分别用于对所述工艺空间中多个不同的区域进行加热；Optionally, the heating cylinder includes a thermal insulation shell and a plurality of heating units, the thermal insulation shell is sleeved on the process chamber, and the plurality of heating units are arranged on the thermal insulation shell opposite to the process chamber. On the inner sidewall of the process space, they are respectively used to heat a plurality of different areas in the process space;
所述热处理设备还包括括温度检测器和控制单元，其中，The heat treatment equipment also includes a temperature detector and a control unit, wherein,
所述温度检测器用于实时检测所述工艺空间中与多个所述加热单元相对应的多个所述区域的实际温度值，并将其发送至所述控制单元；The temperature detector is used for real-time detection of the actual temperature values of a plurality of the regions in the process space corresponding to the plurality of the heating units, and sending them to the control unit;
所述控制单元用于根据多个所述区域的实际温度值之间的差异，调节相应的所述加热单元的输出功率，以使所述多个区域的温度趋于一致。The control unit is configured to adjust the output power of the corresponding heating unit according to the difference between the actual temperature values of the multiple areas, so that the temperatures of the multiple areas tend to be consistent.
可选的，所述温度检测器包括检测管和设置在所述检测管中的多个热电偶，其中，Optionally, the temperature detector includes a detection tube and a plurality of thermocouples arranged in the detection tube, wherein,
所述检测管竖直设置在所述工艺空间中，且所述检测管的上端靠近所述工艺腔室的顶部，所述检测管的下端贯穿所述工艺腔室侧壁的底部并延伸至所述工艺腔室的外部；The detection tube is vertically arranged in the process space, and the upper end of the detection tube is close to the top of the process chamber, and the lower end of the detection tube penetrates the bottom of the side wall of the process chamber and extends to the outside of the process chamber;
多个所述热电偶的位置与多个所述区域一一对应。The positions of the plurality of the thermocouples correspond to the plurality of the regions in one-to-one correspondence.
可选的，所述保温外壳包括筒状侧壁、顶盖和保温套，其中，Optionally, the thermal insulation shell includes a cylindrical side wall, a top cover and a thermal insulation jacket, wherein,
所述筒状侧壁套设在所述工艺腔室上；the cylindrical side wall is sleeved on the process chamber;
所述顶盖设置在所述筒状侧壁的顶部，用于封堵所述筒状侧壁顶部的开口，且所述顶盖上设置有用于供所述排气管路穿过的通孔；The top cover is arranged on the top of the cylindrical side wall to block the opening at the top of the cylindrical side wall, and the top cover is provided with a through hole for the exhaust pipe to pass through ;
所述保温套设置在所述筒状侧壁与所述工艺腔室之间，且靠近所述筒状侧壁的底部，用于封堵所述筒状侧壁与所述工艺腔室之间的环形间隔。The heat preservation sleeve is arranged between the cylindrical side wall and the process chamber, and is close to the bottom of the cylindrical side wall, and is used to block the space between the cylindrical side wall and the process chamber the annular interval.
可选的，所述工艺腔室的所述排气口处设置有球形连接头；Optionally, a spherical connector is provided at the exhaust port of the process chamber;
所述排气管路进气端设置有球形法兰，所述球形法兰与所述球形连接头配合连接，所述排气管路的出气端与所述气液分离装置连通。The air inlet end of the exhaust pipeline is provided with a spherical flange, the spherical flange is matched and connected with the spherical connection head, and the air outlet end of the exhaust pipeline is communicated with the gas-liquid separation device.
可选的，所述顶盖上的所述通孔中还设置有密封结构，所述密封结构包括第一环形密封件、第二环形密封件和固定组件，其中，所述通孔为阶梯孔，所述第一环形密封件位于所述阶梯孔中，套设在所述球形法兰上，所述第一环形密封件的外径小于所述阶梯孔位于其台阶面以下的孔径；所述第二环形密封件套设在所述排气管路的进气端上，且位于所述阶梯孔的台阶面上，所述第二环形密封件的外径小于所述阶梯孔位于所述台阶面以上的孔径；Optionally, the through hole on the top cover is further provided with a sealing structure, the sealing structure includes a first annular seal, a second annular seal and a fixing component, wherein the through hole is a stepped hole , the first annular seal is located in the stepped hole, sleeved on the spherical flange, and the outer diameter of the first annular seal is smaller than the diameter of the stepped hole below the stepped surface; the A second annular seal is sleeved on the intake end of the exhaust pipe and is located on the stepped surface of the stepped hole. The outer diameter of the second annular seal is smaller than that of the stepped hole located on the stepped surface. Aperture above the surface;
所述固定组件与所述顶盖固定连接，且向下压住所述第二环形密封件和所述第一环形密封件，以使二者产生压缩变形。The fixing assembly is fixedly connected with the top cover, and presses the second annular sealing member and the first annular sealing member downwards, so that the two are compressed and deformed.
可选的，所述排气管路上沿气体排出方向依次设置有多个排气加热件，分别用于对所述排气管路在所述气体排出方向上的不同区域进行加热。Optionally, a plurality of exhaust heating elements are sequentially arranged on the exhaust pipeline along the gas discharge direction, which are respectively used to heat different regions of the exhaust pipeline in the gas discharge direction.
可选的，所述排气管路包括沿所述气体排出方向依次连接的第一过渡管和第二过渡管，其中，所述第一过渡管包括沿所述气体排出方向依次连接的第一垂直段、倾斜段和第二垂直段，所述倾斜段的进气端高于所述倾斜段的出气端；Optionally, the exhaust pipeline includes a first transition pipe and a second transition pipe connected in sequence along the gas discharge direction, wherein the first transition pipe includes a first transition pipe connected in sequence along the gas discharge direction. a vertical section, an inclined section and a second vertical section, the air inlet end of the inclined section is higher than the air outlet end of the inclined section;
所述第二过渡管竖直设置。The second transition pipe is arranged vertically.
可选的，所述工艺腔室侧壁的底部沿周向设置有多个进气口；Optionally, the bottom of the side wall of the process chamber is provided with a plurality of air inlets along the circumferential direction;
所述进气管路环绕所述工艺腔室设置，所述进气管路上设置有至少一个进气端和多个出气端，所述进气管路的所述多个出气端与所述多个进气口一一对应地连通；The air intake pipeline is arranged around the process chamber, at least one air intake end and a plurality of air outlet ends are arranged on the air intake pipeline, and the plurality of air outlet ends of the air intake pipeline are connected with the plurality of air intake ends. The mouths are connected in a one-to-one correspondence;
所述进气管路上包覆有预热结构，用于对所述进气管路中的气体进行预热。The intake pipeline is covered with a preheating structure for preheating the gas in the intake pipeline.
可选的，所述工艺腔室包括工艺管和歧管，其中，所述工艺管的底部敞开，顶部设置有所述排气口；所述歧管的顶部敞开，所述歧管的底部敞开形成所述开口，且所述歧管的顶端与所述工艺管的底端密封连接；所述歧管的底端在所述晶圆支撑组件升入所述工艺腔室中后与所述晶圆支撑组件密封连 接，以密封所述歧管底部的开口；并且，所述歧管的侧壁上设置有所述进气口。Optionally, the process chamber includes a process pipe and a manifold, wherein the bottom of the process pipe is open, and the top is provided with the exhaust port; the top of the manifold is open, and the bottom of the manifold is open The opening is formed, and the top end of the manifold is sealed with the bottom end of the process pipe; the bottom end of the manifold is connected to the wafer after the wafer support assembly is lifted into the process chamber. The circular support assembly is sealed and connected to seal the opening at the bottom of the manifold; and the air inlet is provided on the side wall of the manifold.
可选的，所述晶圆支撑组件包括叠置的晶圆支架、隔热结构和工艺门，所述晶圆支撑组件升入所述工艺腔室中后，所述晶圆支架和所述隔热结构位于所述工艺空间中，所述工艺门与所述工艺腔室的底端密封连接，以密封所述工艺腔室底部的开口；Optionally, the wafer support assembly includes a stacked wafer support, a thermal insulation structure and a process door, and after the wafer support assembly is lifted into the process chamber, the wafer support and the partition a thermal structure is located in the process space, and the process door is sealingly connected to the bottom end of the process chamber to seal the opening at the bottom of the process chamber;
所述隔热结构用于对位于其上方的空间进行保温。The thermal insulation structure is used for thermal insulation of the space above it.
可选的，所述隔热结构包括隔热支架和设置在所述隔热支架上的多个隔热板，且多个所述隔热板沿竖直方向间隔排布。Optionally, the heat insulating structure includes a heat insulating support and a plurality of heat insulating boards arranged on the heat insulating support, and the plurality of the heat insulating boards are arranged at intervals along the vertical direction.
本发明具有以下有益效果：The present invention has the following beneficial effects:
本发明实施例提供的半导体热处理设备，晶圆支撑组件在升入工艺腔室中后会密封工艺腔室底部的开口，可以保证工艺空间的密封性，从而可以满足工艺对洁净度的要求，并能够对半导体器件进行颗粒控制；同时，利用进气管路和排气管路分别与位于工艺腔室侧壁的底部的进气口和位于工艺腔室顶部的排气口连通，来实现进气和排气，可以实现对工艺空间的氧含量进行控制。并且，通过套设在工艺腔室上的加热筒加热工艺腔室，可以有效提高工艺空间周向上的温度均匀性，同时该加热筒受外界环境影响较小，从而可以提高加热效率和温度控制精度。本发明实施例提供的半导体热处理设备，通过将上述晶圆支撑组件、进气管路和排气管路以及加热筒结合使用，不仅可以实现晶圆的颗粒和含氧量控制，而且还可以提高温度控制精度和温度均匀性，从而可以保证芯片性能，尤其可以满足先进封装制程对温度控制、氧含量控制、颗粒控制等的综合需求。In the semiconductor heat treatment equipment provided by the embodiment of the present invention, after the wafer support assembly is lifted into the process chamber, the opening at the bottom of the process chamber can be sealed, so as to ensure the sealing of the process space, so as to meet the requirements of the process for cleanliness, and Capable of particle control of semiconductor devices; at the same time, the intake and exhaust pipes are connected to the intake port at the bottom of the sidewall of the process chamber and the exhaust port at the top of the process chamber respectively to achieve intake and exhaust. Exhaust, can control the oxygen content of the process space. In addition, by heating the process chamber through the heating cylinder sleeved on the process chamber, the temperature uniformity in the circumferential direction of the process space can be effectively improved, and at the same time, the heating cylinder is less affected by the external environment, so that the heating efficiency and temperature control accuracy can be improved. . The semiconductor heat treatment equipment provided by the embodiment of the present invention, by combining the above-mentioned wafer support assembly, air inlet and exhaust pipes, and heating cylinder, not only can control the particle and oxygen content of the wafer, but also can increase the temperature Control accuracy and temperature uniformity, so as to ensure chip performance, especially to meet the comprehensive requirements of advanced packaging processes for temperature control, oxygen content control, particle control, etc.
附图说明Description of drawings
图1为现有的烘烤箱的内部结构图；Fig. 1 is the internal structure diagram of the existing oven;
图2为现有的烘烤箱的安装槽的内部结构图；Fig. 2 is the internal structure diagram of the installation groove of the existing oven;
图3为现有的烘烤箱的安装框架的结构图；Fig. 3 is the structure diagram of the installation frame of the existing oven;
图4为本发明实施例提供的半导体热处理设备的剖面图；4 is a cross-sectional view of a semiconductor heat treatment equipment provided by an embodiment of the present invention;
图5为本发明实施例采用的工艺腔室的剖视图；5 is a cross-sectional view of a process chamber used in an embodiment of the present invention;
图6为本发明实施例采用的保温外壳的剖视图；6 is a cross-sectional view of a thermal insulation shell adopted in an embodiment of the present invention;
图7为本发明实施例采用的工艺腔室在其排气口处的局部剖视图；7 is a partial cross-sectional view of a process chamber at its exhaust port used in an embodiment of the present invention;
图8为本发明实施例采用的排气管路的剖视图；8 is a cross-sectional view of an exhaust pipeline used in an embodiment of the present invention;
图9为本发明实施例采用的工艺腔室在其进气口处的俯视剖视图；9 is a top cross-sectional view of a process chamber used in an embodiment of the present invention at its air inlet;
图10为本发明实施例采用的进气管路安装在腔室模块上的剖视图；FIG. 10 is a cross-sectional view of an air intake pipeline installed on a chamber module adopted in an embodiment of the present invention;
图11为本发明实施例采用的气液分离装置的侧视剖视图。11 is a side cross-sectional view of the gas-liquid separation device used in the embodiment of the present invention.
具体实施方式Detailed ways
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图来对本发明实施例提供的半导体热处理设备进行详细描述。In order to make those skilled in the art better understand the technical solutions of the present invention, the semiconductor heat treatment equipment provided by the embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
请参阅图4，本发明实施例提供一种半导体热处理设备，该设备例如可以应用在先进封装设备的制备过程中对封装胶进行固化工艺。具体地，该半导体热处理设备包括工艺腔室2、加热筒3、晶圆支撑组件、进气管路、排气管路4和气液分离装置5。Referring to FIG. 4 , an embodiment of the present invention provides a semiconductor heat treatment equipment, which can be applied to, for example, a curing process of encapsulant in the preparation process of advanced packaging equipment. Specifically, the semiconductor heat treatment equipment includes a process chamber 2 , a heating drum 3 , a wafer support assembly, an air inlet pipe, an exhaust pipe 4 and a gas-liquid separation device 5 .
其中，工艺腔室2中设置有用于容纳上述晶圆支撑组件的工艺空间，且该工艺腔室2底部设置有供该晶圆支撑组件进出的开口，工艺腔室2顶部设置有排气口，并且工艺腔室2侧壁的底部设置有进气口。上述晶圆支撑组件可升降，该晶圆支撑组件经由工艺腔室2底部的开口升入工艺腔室2中后密封该开口。上述晶圆支撑组件的结构可以有多种，例如，上述晶圆支撑组件包括晶圆支架24和工艺门23，其中，晶圆支架24上设置有多个晶圆凸台，用于支撑多个晶圆27，多个晶圆27沿竖直方向间隔排布；并且在晶圆支架24位于上述工艺空间中时，工艺门23与工艺腔室2的底端密封连接，以密 封工艺腔室2底部的开口。由此，利用上述晶圆支撑组件经由工艺腔室2底部的开口移出或移入工艺腔室2中，可以实现将晶圆支架24上的晶圆移出或移入上述工艺空间，进而可以实现晶圆的装卸载。Wherein, the process chamber 2 is provided with a process space for accommodating the above-mentioned wafer support assembly, and the bottom of the process chamber 2 is provided with an opening for the wafer support assembly to enter and exit, and the top of the process chamber 2 is provided with an exhaust port, And the bottom of the side wall of the process chamber 2 is provided with an air inlet. The above-mentioned wafer support assembly can be lifted and lowered, and the wafer support assembly is lifted into the process chamber 2 through the opening at the bottom of the process chamber 2 and then the opening is sealed. The above-mentioned wafer support assembly may have various structures. For example, the above-mentioned wafer support assembly includes a wafer support 24 and a process gate 23, wherein the wafer support 24 is provided with a plurality of wafer bosses for supporting a plurality of wafer supports. Wafers 27, a plurality of wafers 27 are arranged at intervals along the vertical direction; and when the wafer holder 24 is located in the above-mentioned process space, the process gate 23 is sealedly connected with the bottom end of the process chamber 2 to seal the process chamber 2 bottom opening. Therefore, by using the above-mentioned wafer support assembly to move out or into the process chamber 2 through the opening at the bottom of the process chamber 2, the wafer on the wafer holder 24 can be moved out or moved into the above-mentioned process space, and then the wafer can be moved out of or into the process space. Unloading.
并且，如图5所示，上述晶圆支撑组件还包括隔热结构242，该隔热结构242位于晶圆支架24与工艺门23之间，用于承载晶圆支架24，并与上述工艺门23连接，在晶圆支架24和隔热结构242均位于上述工艺空间中时，工艺门23与工艺腔室2的底端密封连接，以密封工艺腔室2底部的开口。上述隔热结构242用于对位于其上方的空间进行保温，从而可以进一步减少工艺空间的底部的热量损耗，有利于提高工艺空间的温度均匀性。Moreover, as shown in FIG. 5 , the above-mentioned wafer support assembly further includes a heat insulation structure 242 , the heat insulation structure 242 is located between the wafer support 24 and the process door 23 for carrying the wafer support 24 and is connected with the above process door. 23 is connected. When both the wafer holder 24 and the heat insulating structure 242 are located in the above-mentioned process space, the process door 23 is sealedly connected to the bottom end of the process chamber 2 to seal the opening at the bottom of the process chamber 2 . The above-mentioned thermal insulation structure 242 is used to insulate the space above it, so as to further reduce the heat loss at the bottom of the process space, which is beneficial to improve the temperature uniformity of the process space.
隔热结构242可以有多种结构，例如，如图5所示，隔热结构242包括隔热支架242a和设置在该隔热支架242a上的多个隔热板242b，且多个隔热板242b沿竖直方向间隔排布。另外，上述隔热支架242a与工艺门23连接，并支撑多个晶圆支架24。The heat insulation structure 242 may have various structures. For example, as shown in FIG. 5 , the heat insulation structure 242 includes a heat insulation support 242a and a plurality of heat insulation boards 242b arranged on the heat insulation support 242a, and a plurality of heat insulation boards 242b are spaced apart in the vertical direction. In addition, the above-mentioned heat insulating support 242 a is connected to the process door 23 and supports a plurality of wafer supports 24 .
在本实施例中，上述进气管路与上述进气口连通，用于向上述工艺空间内输送气体，例如在固化工艺中向工艺空间中输送保护气体(例如氮气)。排气管路4穿过上述加热筒3与上述排气口连通，用于排出上述工艺空间中的气体(例如包含工艺副产物的保护气体)。气液分离装置5与上述排气管路4连通，用于液化并收集从工艺空间中排出的气体中的工艺副产物，并排出剩余的气体。借助气液分离装置5，可以从排出的气体中将工艺副产物分离出来，保证排出的气体的洁净度。In this embodiment, the air inlet pipeline is communicated with the air inlet, and is used to deliver gas into the process space, for example, to deliver protective gas (eg nitrogen) into the process space during the curing process. The exhaust pipe 4 passes through the above-mentioned heating cylinder 3 and communicates with the above-mentioned exhaust port, and is used for exhausting the gas in the above-mentioned process space (eg, protective gas containing process by-products). The gas-liquid separation device 5 communicates with the above-mentioned exhaust pipeline 4, and is used for liquefying and collecting process by-products in the gas discharged from the process space, and discharging the remaining gas. With the aid of the gas-liquid separation device 5, the by-products of the process can be separated from the exhausted gas to ensure the cleanliness of the exhausted gas.
上述工艺腔室2的结构可以有多种，例如，在本实施例中，如图5所示，工艺腔室2包括工艺管21和歧管22，其中，该工艺管21的底部敞开，顶部设置有上述排气口21a；歧管22的顶部敞开，且歧管22的底部敞开形成用于供晶圆支撑组件移出或移入的上述开口；歧管22的顶端与工艺管21的底端密封连接，密封连接的方式例如为：在工艺管21的底端和歧管22的顶端 分别设置有相互对接的法兰，且在这两个法兰之间设置有密封圈29，用以对二者之间的间隙进行密封。歧管22的底端在上述晶圆支撑组件升入工艺腔室2中后，与晶圆支撑组件(例如工艺门23)密封连接，密封连接的方式例如为：在歧管22的底端设置有密封圈28，用以对歧管22与工艺门23之间的间隙进行密封。并且，歧管22的侧壁上设置有上述进气口。The above-mentioned process chamber 2 can have various structures. For example, in this embodiment, as shown in FIG. 5 , the process chamber 2 includes a process pipe 21 and a manifold 22 , wherein the process pipe 21 has an open bottom and an open top. The above-mentioned exhaust port 21a is provided; the top of the manifold 22 is open, and the bottom of the manifold 22 is open to form the above-mentioned opening for moving out or in of the wafer support assembly; the top of the manifold 22 is sealed with the bottom of the process pipe 21 The way of connection and sealing connection is, for example: the bottom end of the process pipe 21 and the top end of the manifold 22 are respectively provided with mutually butted flanges, and a sealing ring 29 is provided between the two flanges to align the two flanges. The gap between them is sealed. The bottom end of the manifold 22 is sealedly connected to the wafer support assembly (eg, the process gate 23 ) after the above-mentioned wafer support assembly is lifted into the process chamber 2 . There is a sealing ring 28 for sealing the gap between the manifold 22 and the process door 23 . In addition, the above-mentioned intake port is provided on the side wall of the manifold 22 .
晶圆支撑组件在升入工艺腔室中后密封工艺腔室底部的开口，可以保证工艺空间的密封性，从而可以满足工艺对洁净度的要求，并能够对半导体器件进行颗粒控制；同时，通过进气管路和排气管路分别与位于工艺腔室侧壁的底部的进气口和位于工艺腔室顶部的排气口连通，来实现进气和排气，可以实现对工艺空间的氧含量进行控制。进一步来说，由于上述工艺空间是密封的，可以通过控制进气管路通入工艺空间内的气体流量，以及通过控制排气管路4排出工艺空间内的气体流量，来控制工艺空间内的气压，使之为正压，在此压力环境下，外部环境中的氧气无法进入工艺空间中，而且还可以在工艺开始之前利用进气管路向工艺空间中通入气体(例如氮气)，并开启排气管路4，以对工艺空间中的氧气进行置换，从而可以实现对工艺空间的氧含量进行控制。After the wafer support assembly is lifted into the process chamber, the opening at the bottom of the process chamber is sealed, which can ensure the sealing of the process space, so as to meet the cleanliness requirements of the process and control the particles of semiconductor devices; at the same time, through The intake line and the exhaust line are respectively communicated with the intake port located at the bottom of the side wall of the process chamber and the exhaust port located at the top of the process chamber to realize intake and exhaust, which can realize the oxygen content of the process space. Take control. Further, since the above-mentioned process space is sealed, the air pressure in the process space can be controlled by controlling the gas flow rate of the air inlet pipeline into the process space, and by controlling the gas flow rate discharged from the process space by the exhaust line 4. , make it a positive pressure, under this pressure environment, the oxygen in the external environment cannot enter the process space, and it is also possible to use the intake line to introduce gas (such as nitrogen) into the process space before the process starts, and open the exhaust The pipeline 4 is used to replace the oxygen in the process space, so that the oxygen content in the process space can be controlled.
可选的，本发明实施例提供的半导体热处理设备还可以包括氧气分析仪26，其用于检测工艺空间中的氧气含量，以在完成氧气置换之后，确认工艺空间中的氧气含量是否满足工艺要求。Optionally, the semiconductor heat treatment equipment provided in the embodiment of the present invention may further include an oxygen analyzer 26, which is used to detect the oxygen content in the process space, so as to confirm whether the oxygen content in the process space meets the process requirements after the oxygen replacement is completed. .
本发明实施例提供的半导体热处理设备，在实现对工艺空间的氧含量进行控制的基础上，可以实现对半导体器件进行颗粒控制，这是因为在低氧环境下，可以减少因氧化而产生的颗粒，同时上述排气管路4还能够将工艺空间中在工艺产生的副产物排出。由此可知，通过将上述晶圆支撑组件以及进气管路和排气管路结合使用，可以实现晶圆的颗粒和含氧量控制，尤其可以满足先进封装制程对氧含量控制、颗粒控制等的综合需求。The semiconductor heat treatment equipment provided by the embodiments of the present invention can realize particle control of semiconductor devices on the basis of controlling the oxygen content of the process space, because in a low oxygen environment, particles generated due to oxidation can be reduced At the same time, the above-mentioned exhaust pipeline 4 can also discharge the by-products generated in the process in the process space. It can be seen from this that by using the above-mentioned wafer support assembly and the air inlet pipeline and the exhaust pipeline in combination, the particle and oxygen content control of the wafer can be realized, especially the requirements for oxygen content control and particle control in the advanced packaging process can be met. Comprehensive needs.
如图4所示，加热筒3套设在工艺腔室2上，即，环绕设置在该工艺管21的周围，用于加热工艺腔室2。通过套设在工艺腔室2上的加热筒3加热工艺腔室2，可以有效提高工艺空间2周向上的温度均匀性，同时该加热筒3受外界环境影响较小，从而可以提高加热效率和温度控制精度。As shown in FIG. 4 , the heating cylinder 3 is sleeved on the process chamber 2 , that is, arranged around the process tube 21 , for heating the process chamber 2 . By heating the process chamber 2 by the heating cylinder 3 sleeved on the process chamber 2, the temperature uniformity in the circumferential direction of the process space 2 can be effectively improved, and at the same time, the heating cylinder 3 is less affected by the external environment, so that the heating efficiency and Temperature control accuracy.
可选的，该加热筒3包括保温外壳32和多个加热单元31，其中，保温外壳32套设在工艺腔室2上；多个加热单元31设置在保温外壳32与工艺腔室2相对的内侧壁上，分别用于对工艺空间中多个不同的区域进行加热。例如，图4中示出了四个区域(A-D)，且四个区域(A-D)沿竖直方向分布，与之相对应的，加热单元31为四个，且与四个区域(A-D)一一对应，用以独立地对四个区域(A-D)进行加热。这样，可以有效提高工艺空间内在其周向和轴向上的温度均匀性。同时，借助保温外壳32，可以减少加热单元31的热量损耗，且避免其受外界环境影响，从而可以提高加热效率和温度控制精度。Optionally, the heating cylinder 3 includes a thermal insulation shell 32 and a plurality of heating units 31, wherein the thermal insulation shell 32 is sleeved on the process chamber 2; On the inner sidewall, they are used to heat a number of different areas in the process space. For example, four areas (A-D) are shown in FIG. 4, and the four areas (A-D) are distributed in the vertical direction. Correspondingly, there are four heating units 31, which are one with the four areas (A-D). One correspondence, to heat the four zones (A-D) independently. In this way, the temperature uniformity in the circumferential and axial directions of the process space can be effectively improved. At the same time, with the help of the thermal insulation casing 32, the heat loss of the heating unit 31 can be reduced, and the influence of the external environment can be avoided, so that the heating efficiency and the temperature control accuracy can be improved.
可选的，为了实现温度均匀性的自动控制以及提高温度控制精度，半导体热处理设备还包括温度检测器33和控制单元(图中未示出)，其中，上述温度检测器33用于实时检测上述工艺空间中与多个加热单元31相对应的多个区域的实际温度值，并将其发送至控制单元；该控制单元用于根据多个区域的实际温度值之间的差异，调节相应的加热单元31的输出功率，以使多个区域的温度趋于一致。以图4中示出的四个区域(A-D)为例，控制单元根据温度检测器33检测的四个区域(A-D)的实际温度值，采用指定的算法计算获得各个加热单元31的输出功率，例如对于靠近工艺空间的顶部和底部的区域A和D，由于其因更易受环境影响而产生较多的热量损耗，故而其输出功率应大于区域B和C，从而可以将区域A和D与区域B和C之间的温度差异控制在允许的温差范围内。Optionally, in order to realize automatic control of temperature uniformity and improve temperature control accuracy, the semiconductor heat treatment equipment further includes a temperature detector 33 and a control unit (not shown in the figure), wherein the above-mentioned temperature detector 33 is used to detect the above-mentioned temperature in real time. The actual temperature values of the multiple areas in the process space corresponding to the multiple heating units 31 are sent to the control unit; the control unit is used to adjust the corresponding heating according to the difference between the actual temperature values of the multiple areas The output power of the unit 31 so that the temperature of the multiple regions tends to be uniform. Taking the four regions (A-D) shown in FIG. 4 as an example, the control unit calculates and obtains the output power of each heating unit 31 according to the actual temperature values of the four regions (A-D) detected by the temperature detector 33 using a specified algorithm, For example, for regions A and D near the top and bottom of the process space, since they are more susceptible to environmental influences and generate more heat loss, their output power should be greater than that of regions B and C, so that regions A and D can be compared with regions The temperature difference between B and C is controlled within the allowable temperature difference range.
上述温度检测器33的结构可以有多种，例如，如图4所示，温度检测 器33包括检测管331和设置在该检测管331中的多个热电偶332，其中，检测管331竖直设置在上述工艺空间中，且检测管331的上端靠近工艺空间的顶部，检测管331的下端贯穿工艺腔室2(例如歧管22)侧壁的底部，并延伸至工艺腔室2的外部；多个热电偶332的位置与多个区域一一对应，且多个热电偶332的接线均自检测管的下端引出。The above-mentioned temperature detector 33 may have various structures. For example, as shown in FIG. 4 , the temperature detector 33 includes a detection tube 331 and a plurality of thermocouples 332 arranged in the detection tube 331 , wherein the detection tube 331 is vertical is arranged in the above-mentioned process space, and the upper end of the detection tube 331 is close to the top of the process space, and the lower end of the detection tube 331 penetrates the bottom of the side wall of the process chamber 2 (for example, the manifold 22), and extends to the outside of the process chamber 2; The positions of the plurality of thermocouples 332 correspond to the plurality of regions one-to-one, and the wires of the plurality of thermocouples 332 are all drawn out from the lower end of the detection tube.
上述保温外壳32可以有多种结构，例如，如图6所示，保温外壳32包括筒状侧壁321、顶盖322和保温套323，其中，筒状侧壁321套设在工艺腔室2上。例如，每个加热单元31包括加热丝，该加热丝内嵌在筒状侧壁321的内侧壁上，且围绕筒状侧壁321的轴向缠绕。需要说明的是，不同的加热单元31，加热丝是相互独立的，以能够对其电流或电压的大小进行单独控制。当然，在实际应用中，加热单元31还可以采用其他任意能够产生热量的加热元件。而且，加热单元31也并不局限于采用内嵌在筒状侧壁321的内侧壁上的方式，只要筒状侧壁321能够对加热单元31起到保温的作用即可。The above-mentioned thermal insulation shell 32 can have various structures, for example, as shown in FIG. superior. For example, each heating unit 31 includes a heating wire embedded on the inner side wall of the cylindrical side wall 321 and wound around the axial direction of the cylindrical side wall 321 . It should be noted that, for different heating units 31, the heating wires are independent of each other, so that the magnitude of the current or voltage thereof can be individually controlled. Of course, in practical applications, the heating unit 31 may also adopt any other heating element capable of generating heat. Moreover, the heating unit 31 is not limited to being embedded in the inner side wall of the cylindrical side wall 321 , as long as the cylindrical side wall 321 can keep the heating unit 31 warm.
上述顶盖322设置在筒状侧壁321的顶部，用于封堵该筒状侧壁321顶部的开口，且该顶盖322上设置有用于供上述排气管路4穿过的通孔322a。这样，既可以保证排气管路4能够与工艺腔室2的排气口21a连接，又可以避免加热单元31产生的热量在环境气流的传导下自顶部开口大量流失，从而保证控温效果。The top cover 322 is disposed on the top of the cylindrical side wall 321 to block the opening at the top of the cylindrical side wall 321, and the top cover 322 is provided with a through hole 322a for the exhaust pipe 4 to pass through. . In this way, the exhaust line 4 can be connected to the exhaust port 21a of the process chamber 2, and the heat generated by the heating unit 31 can be prevented from being lost from the top opening under the conduction of the ambient air flow, thereby ensuring the temperature control effect.
上述保温套323设置在上述筒状侧壁321与工艺腔室2(即，歧管22)之间，且靠近筒状侧壁321的底部，用于封堵筒状侧壁321与工艺腔室2之间的环形间隔，从而可以避免加热单元31产生的热量自该环形间隔流失，从而保证控温效果。The above-mentioned thermal insulation sleeve 323 is disposed between the above-mentioned cylindrical side wall 321 and the process chamber 2 (ie, the manifold 22 ), and is close to the bottom of the cylindrical side wall 321 , and is used to block the cylindrical side wall 321 and the process chamber. The annular space between 2 can prevent the heat generated by the heating unit 31 from being lost from the annular space, thereby ensuring the temperature control effect.
上述排气管路4与工艺腔室2的排气口21a连接的结构可以有多种，例如，如图7所示，工艺腔室2的排气口处设置有球形连接头422；排气管路4的进气端设置有球形法兰421，该球形法兰421与球形连接头422配合连接， 例如，球形法兰421的内球面与球形连接头422的外球面相配合。通过球形法兰421与球形连接头422配合连接，球形法兰421的内球面能够相对于球形连接头422的外球面，围绕该外球面的球心转动，从而能够改变排气管路4相对于工艺腔室2的角度，即，实现排气管路4的角度可调，从而有利于安装便利，同时实现了柔性连接。可选的，球形法兰421与排气管路4的连接方式例如为一体成型或者焊接等等；上述球形连接头422与工艺腔室2(即，工艺管22)的连接方式例如为一体成型或者焊接等等。当然，在实际应用中，排气管路4的进气端与工艺腔室2的排气口之间还可以采用其他柔性连接或者万向连接的方式，只要能够实现排气管路4的角度可调即可。此外，排气管路4的出气端与气液分离装置5连通。There can be various structures for connecting the above-mentioned exhaust pipeline 4 to the exhaust port 21a of the process chamber 2. For example, as shown in FIG. 7, the exhaust port of the process chamber 2 is provided with a spherical connector 422; The air inlet end of the pipeline 4 is provided with a spherical flange 421 , and the spherical flange 421 is connected with the spherical joint 422 . The spherical flange 421 is connected with the spherical joint 422, and the inner spherical surface of the spherical flange 421 can rotate relative to the outer spherical surface of the spherical joint 422 and rotate around the spherical center of the outer spherical surface, thereby changing the relative position of the exhaust pipe 4 to the spherical surface. The angle of the process chamber 2, that is, the angle of the exhaust pipe 4 can be adjusted, so as to facilitate the installation and realize the flexible connection at the same time. Optionally, the connection method between the spherical flange 421 and the exhaust pipe 4 is integrally formed or welded, for example; the connection method between the spherical connection head 422 and the process chamber 2 (ie, the process pipe 22 ) is integrally formed, for example. Or welding, etc. Of course, in practical applications, other flexible connection or universal connection can also be used between the intake end of the exhaust pipe 4 and the exhaust port of the process chamber 2, as long as the angle of the exhaust pipe 4 can be achieved Adjustable. In addition, the gas outlet end of the exhaust pipe 4 is communicated with the gas-liquid separation device 5 .
可选的，在保证上述排气管路4的进气端与工艺腔室2的排气口保持连接的基础上，为了密封通孔322a，避免加热单元31产生的热量在环境气流的传导下自顶部开口大量流失，顶盖322上的通孔322a中还设置有密封结构7，该密封结构7包括第一环形密封件71、第二环形密封件72和固定组件73，其中，上述顶盖322中的上述通孔322a为阶梯孔，第一环形密封件71位于该阶梯孔中，且套设在球形法兰421上，例如，可以在球形法兰421上设置凸台421a，该凸台421a例如位于球形法兰421远离排气管路4的一端，且相对于球形法兰421的外球面凸出，第一密封件71叠置在该凸台421a上，并且第一密封件71的外径小于该阶梯孔位于其台阶面以下的孔径(即，最小直径)，以避免孔壁因与第一密封件71接触而磨损；上述第二环形密封件72套设在排气管路4的进气端上，且位于上述阶梯孔的台阶面上，且第二环形密封件72的外径小于该阶梯孔位于台阶面以上的孔径(即，最大直径)，以避免孔壁因与第二密封件72接触而磨损。上述固定组件73与顶盖322固定连接，且向下压住第二环形密封件72和第一环形密封件71，以使二者产生压缩变形。也就是说，固定组件73与上述凸台421a之间的竖直间距小于第 二密封件72和第一密封件71在处于原始状态时的厚度之和，从而使第二环形密封件72和第一环形密封件71产生压缩变形，从而可以起到密封作用。由于工艺腔室2的顶部温度较高，为了保证保温效果，可选的，第二环形密封件72和第一环形密封件71均使用耐火纤维材料等的耐高温柔性材料制作。Optionally, on the basis of ensuring that the air inlet end of the above-mentioned exhaust pipe 4 is kept connected with the exhaust port of the process chamber 2, in order to seal the through hole 322a, to prevent the heat generated by the heating unit 31 from being conducted by the ambient air flow. There is a large amount of leakage from the top opening. The through hole 322a on the top cover 322 is also provided with a sealing structure 7, and the sealing structure 7 includes a first annular sealing member 71, a second annular sealing member 72 and a fixing component 73. The above-mentioned top cover The above-mentioned through hole 322a in 322 is a stepped hole, and the first annular seal 71 is located in the stepped hole and is sleeved on the spherical flange 421. For example, a boss 421a can be set on the spherical flange 421, the boss For example, 421a is located at one end of the spherical flange 421 away from the exhaust pipe 4, and protrudes relative to the outer spherical surface of the spherical flange 421. The first sealing member 71 is superimposed on the boss 421a, and the The outer diameter is smaller than the hole diameter (ie, the minimum diameter) of the stepped hole below its stepped surface, so as to avoid the hole wall from being worn due to contact with the first sealing member 71 ; the above-mentioned second annular sealing member 72 is sleeved on the exhaust pipe 4 . On the intake end of the above-mentioned stepped hole, and on the stepped surface of the above-mentioned stepped hole, and the outer diameter of the second annular seal 72 is smaller than the diameter of the stepped hole above the stepped surface (ie, the maximum diameter), so as to avoid the hole wall due to The two seals 72 contact and wear. The above-mentioned fixing component 73 is fixedly connected with the top cover 322, and presses the second annular sealing member 72 and the first annular sealing member 71 downwardly so as to cause compression deformation of the two. That is to say, the vertical distance between the fixing assembly 73 and the above-mentioned boss 421a is smaller than the sum of the thicknesses of the second sealing member 72 and the first sealing member 71 in the original state, so that the second annular sealing member 72 and the first sealing member 71 are in the original state. An annular seal 71 is compressed and deformed, so that it can perform a sealing function. Since the top temperature of the process chamber 2 is relatively high, in order to ensure the thermal insulation effect, optionally, both the second annular seal 72 and the first annular seal 71 are made of high temperature resistant flexible materials such as refractory fiber materials.
可选的，第一环形密封件71的压缩量大于第二环形密封件72的压缩量。由于第一环形密封件71的压缩量较大，其作用于凸台421a上的压紧力较大，这使得球形法兰421和球形连接头422之间的密封更加可靠。同时，由于第二环形密封件72的压缩量较小(例如0-3mm)，这可以防止阶梯孔的台阶面因压力过大而受损。Optionally, the compression amount of the first annular seal 71 is greater than the compression amount of the second annular seal 72 . Since the compression amount of the first annular seal 71 is larger, the pressing force acting on the boss 421a is larger, which makes the sealing between the spherical flange 421 and the spherical joint 422 more reliable. Meanwhile, since the compression amount of the second annular seal 72 is small (eg, 0-3 mm), this can prevent the stepped surface of the stepped hole from being damaged due to excessive pressure.
可选的，为了使工艺副产物保持气态，防止非气态的工艺副产物堵塞排气管路4，如图8所示，排气管路4上沿气体排出方向依次设置有多个排气加热件，分别用于对排气管路4在上述气体排出方向上的不同区域进行加热。通过采用分段控温的方式对排气管路4进行加热，既可以使工艺副产物保持气态，防止非气态的工艺副产物堵塞排气管路4，又可以使自排气管路4流入气液分离装置5中的气体的温度更有利于快速液化，从而提高液化效率。Optionally, in order to keep the process by-products in a gaseous state and prevent non-gaseous process by-products from clogging the exhaust pipeline 4, as shown in FIG. The components are respectively used to heat different regions of the exhaust pipe 4 in the above-mentioned gas discharge direction. By heating the exhaust pipeline 4 by means of segmented temperature control, the process by-products can be kept in a gaseous state, preventing non-gaseous process by-products from clogging the exhaust pipeline 4, and allowing the self-exhaust pipeline 4 to flow into the exhaust pipeline 4. The temperature of the gas in the gas-liquid separation device 5 is more conducive to rapid liquefaction, thereby improving the liquefaction efficiency.
可选的，为了进一步提高排气管路4的气体流动性，如图8所示，上述排气管路4包括沿气体排出方向依次连接的第一过渡管41a和第二过渡管41b，其中，该第一过渡管41a包括沿气体排出方向依次连接的第一垂直段411、倾斜段412和第二垂直段413，该倾斜段412的进气端高于倾斜段412的出气端，倾斜段412相对于水平面的倾斜角度例如为5°。借助倾斜段412，可以有效提高排气管路4的气体流动性。上述第二过渡管41b竖直设置，以便于与气液分离装置5连接。另外，上述第一垂直段411和第二垂直段413分别用于实现与工艺腔室2和第二过渡管41b的连接。Optionally, in order to further improve the gas fluidity of the exhaust pipe 4, as shown in FIG. 8, the above-mentioned exhaust pipe 4 includes a first transition pipe 41a and a second transition pipe 41b connected in sequence along the gas discharge direction, wherein , the first transition pipe 41a includes a first vertical section 411, an inclined section 412 and a second vertical section 413 connected in sequence along the gas discharge direction. The gas inlet end of the inclined section 412 is higher than the gas outlet end of the inclined section 412, and the inclined section The inclination angle of 412 with respect to the horizontal plane is, for example, 5°. By means of the inclined section 412 , the gas flowability of the exhaust pipe 4 can be effectively improved. The above-mentioned second transition pipe 41b is arranged vertically so as to be connected with the gas-liquid separation device 5 . In addition, the above-mentioned first vertical section 411 and second vertical section 413 are respectively used to realize the connection with the process chamber 2 and the second transition pipe 41b.
可选的，由于第一过渡管41a更靠近腔体组件2，其优选为诸如石英管等的耐高温管；而第二过渡管41b则可以为成本较低的金属管。Optionally, since the first transition tube 41a is closer to the cavity assembly 2, it is preferably a high temperature resistant tube such as a quartz tube; while the second transition tube 41b can be a metal tube with lower cost.
在上述排气管路4采用如图8所示的结构的基础上，上述排气加热件为两个，分别为第一排气加热件81和第二排气加热件82，其中，第一排气加热件81包覆在第一过渡管41a上，用以对该第一过渡管41a进行加热；第二排气加热件82包覆在第二过渡管41b上，用以对该第二过渡管41b进行加热。例如，第一排气加热件81的加热温度大于第二排气加热件82的加热温度，且使第一排气加热件81的加热温度高于工艺副产物的气化温度较多(如350℃)，而第二排气加热件82的加热温度高于工艺副产物的气化温度较少(如250℃)，这样，既可以保证在第一过渡管41a为横向管的情况下仍然能够使其中的工艺副产物具有足够流动性，又可以使自第二过渡管41b流入气液分离装置5中的废气的温度更有利于快速液化，从而提高液化效率。On the basis that the above-mentioned exhaust pipe 4 adopts the structure as shown in FIG. 8 , the above-mentioned exhaust heating elements are two, which are a first exhaust heating element 81 and a second exhaust heating element 82 respectively. The exhaust heating element 81 covers the first transition pipe 41a for heating the first transition pipe 41a; the second exhaust heating element 82 covers the second transition pipe 41b for heating the second transition pipe 41b The transition pipe 41b is heated. For example, the heating temperature of the first exhaust heating element 81 is higher than the heating temperature of the second exhaust heating element 82, and the heating temperature of the first exhaust heating element 81 is higher than the gasification temperature of the process by-products (eg, 350°C). °C), while the heating temperature of the second exhaust heating element 82 is lower than the gasification temperature of the process by-products (eg, 250 °C), so that it can be ensured that the first transition tube 41a is still a horizontal tube. The process by-products therein have sufficient fluidity, and the temperature of the exhaust gas flowing into the gas-liquid separation device 5 from the second transition pipe 41b can be more conducive to rapid liquefaction, thereby improving the liquefaction efficiency.
另外，可选的，在第一过渡管41a和第二过渡管41b之间的连接处还设置有保温部件83，用以避免该连接处产生热量损失。并且，在第一过渡管41a和第二过渡管41b之间还设置有密封件，该密封件的耐温温度例如在300℃以下。上述第二排气加热件82的加热温度应低于该耐温温度，以避免密封件失效。In addition, optionally, a heat preservation member 83 is further provided at the connection between the first transition pipe 41a and the second transition pipe 41b, so as to avoid heat loss at the connection. In addition, a sealing member is further provided between the first transition pipe 41a and the second transition pipe 41b, and the temperature resistance temperature of the sealing member is, for example, 300° C. or lower. The heating temperature of the above-mentioned second exhaust heating element 82 should be lower than the temperature resistance temperature to avoid failure of the sealing element.
在本实施例中，工艺腔室2(例如歧管22)的侧壁的底部沿周向设置有多个进气口；并且，进气管路环绕工艺腔室2设置，该进气管路上设置有至少一个进气端和多个出气端，该进气管路的多个出气端与多个进气口一一对应地连通。例如，如图9和图10所示，进气管路9上设置有一个进气端911，用于与气源连接，且进气管路9上还设置有两个出气端912，二者分别与设置在工艺腔室2(例如歧管22)的侧壁底部的两个进气口连通。可选的，进气管路9为半圆形管路，且进气端911位于进气管路9的中间位置，而两个出气端912位于进气管路9的两端处，这样，自进气端911进入进气管路9中的气体会分成两路分别朝向两个出气端912流动，并同时经由两个出气端912进入工艺腔室2中，从而可以提高进气均匀性。In this embodiment, the bottom of the side wall of the process chamber 2 (for example, the manifold 22 ) is provided with a plurality of air inlets in the circumferential direction; and the air inlet pipeline is arranged around the process chamber 2 , and the air inlet pipeline is provided with At least one air inlet end and a plurality of air outlet ends, and the plurality of air outlet ends of the air inlet pipeline communicate with the plurality of air inlet ports in one-to-one correspondence. For example, as shown in FIG. 9 and FIG. 10 , the intake pipe 9 is provided with an intake end 911 for connecting with the air source, and the intake pipe 9 is also provided with two outlet ends 912, which are respectively connected to the air source. Two air inlets provided at the bottom of the side walls of the process chamber 2 (eg manifold 22 ) communicate with each other. Optionally, the intake pipe 9 is a semicircular pipe, and the intake end 911 is located in the middle of the intake pipe 9, and the two outlet ends 912 are located at both ends of the intake pipe 9. The gas entering the air inlet pipeline 9 from the end 911 will be divided into two paths to flow toward the two air outlet ends 912 respectively, and enter the process chamber 2 through the two air outlet ends 912 at the same time, so that the uniformity of air intake can be improved.
而且，进气管路9上包覆有预热结构92，该预热结构92用于对进气管路9中的气体进行加热，从而可以在工艺气体进入工艺空间之前，对其进行预热。由于气源提供的气体温度一般在20℃且流量较大，该温度远远低于工艺空间的温度，这使得气体若直接进入工艺空间，会带走工艺空间底部的大量热量，从而影响温度均匀性，为此，借助上述预热结构92在气体进入工艺空间之前，对其进行预热，可以改善气流温差对工艺空间的底部温区产生的影响，从而可以提高温度均匀性。Moreover, the air inlet pipeline 9 is covered with a preheating structure 92, and the preheating structure 92 is used to heat the gas in the air inlet pipeline 9, so that the process gas can be preheated before it enters the process space. Since the gas temperature provided by the gas source is generally 20°C and the flow rate is relatively large, the temperature is far lower than the temperature of the process space, so that if the gas directly enters the process space, it will take away a large amount of heat at the bottom of the process space, thus affecting the temperature uniformity. Therefore, by using the preheating structure 92 to preheat the gas before it enters the process space, the influence of the gas temperature difference on the bottom temperature region of the process space can be improved, thereby improving the temperature uniformity.
预热结构92的结构可以有多种，例如包括包覆在进气管路9上的进气加热件，以及用于检测进气管路9中的气体温度的温度检测件(图中未示出)。根据该温度检测件检测进气管路9中的气体温度，可以实现对进气温度进行精确控制，以满足工艺需要。例如，使进气管路9中的气体的温度与工艺空间内的工艺温度一致。可选的，上述进气加热件的周围还包覆有保温件，以减少热量损失，提高预热效率，该保温件例如采用硅胶或耐火纤维等的保温材料制作。The preheating structure 92 can have various structures, for example, including an intake air heating element covering the intake pipe 9 and a temperature detecting element (not shown in the figure) for detecting the temperature of the gas in the intake pipe 9 . . The temperature of the gas in the intake pipeline 9 is detected by the temperature detecting element, so that the temperature of the intake gas can be precisely controlled to meet the technological requirements. For example, the temperature of the gas in the inlet line 9 is made consistent with the process temperature in the process space. Optionally, the above-mentioned air intake heating element is also covered with a heat insulating element to reduce heat loss and improve preheating efficiency, and the heat insulating element is made of insulating material such as silica gel or refractory fiber, for example.
如图4所示，上述气液分离装置5例如包括气液分离组件51、集液容器52和分别与二者连接的液体管路53以及设置在该液体管路53上的通断阀54。其中，气液分离组件51与上述排气管路4连接，用于对工艺空间中排出的气体中的工艺副产物进行冷却，以使之液化，并从排出的气体中分离出来后流入集液容器52，从而实现上述工艺副产物的液化和收集。分离后的洁净气体会排入抽气装置，该抽气装置可以为厂务排气管道等。As shown in FIG. 4 , the above-mentioned gas-liquid separation device 5 includes, for example, a gas-liquid separation component 51 , a liquid collecting container 52 , a liquid pipeline 53 respectively connected to the two, and an on-off valve 54 provided on the liquid pipeline 53 . Wherein, the gas-liquid separation component 51 is connected to the above-mentioned exhaust pipeline 4, and is used to cool the process by-products in the gas discharged from the process space to liquefy them, separate them from the discharged gas and flow into the liquid collection Vessel 52, thereby enabling the liquefaction and collection of the above-mentioned process by-products. The separated clean gas will be discharged into the extraction device, which can be used for factory exhaust pipes, etc.
上述气液分离组件51的结构有多种，例如，如图11所示，气液分离组件51为用于输送废气的冷凝管道，在该冷凝管道输送废气的过程中，冷凝管道的管壁能够对废气进行冷凝，而且由于冷凝管道是竖直的，这使得冷凝液体在自身重力作用下从废气中分离出来。另外，冷凝管道的内壁上具有凸起结构511，该凸起结构511包括与冷凝管道中的废气输送方向相对、且相对 于冷凝管道的轴线倾斜的斜面，用于增大冷凝管道与废气的接触面积，从而增强冷凝管道的冷凝效果。通过使斜面与冷凝管道中的废气输送方向相对，可以保证该斜面能够与废气相接触，以实现对废气的冷却。同时通过使斜面相对于冷凝管道的轴线倾斜，可以避免扰乱气流，同时避免阻碍冷凝液体的流动。There are various structures of the above-mentioned gas-liquid separation assembly 51. For example, as shown in FIG. 11, the gas-liquid separation assembly 51 is a condensing pipe for conveying waste gas. The exhaust gas is condensed, and since the condensation pipe is vertical, this allows the condensed liquid to separate from the exhaust gas under its own gravity. In addition, a convex structure 511 is provided on the inner wall of the condensing pipe, and the convex structure 511 includes a slope opposite to the conveying direction of the exhaust gas in the condensing pipe and inclined with respect to the axis of the condensing pipe, so as to increase the contact between the condensing pipe and the exhaust gas area, thereby enhancing the condensation effect of the condensation pipe. By making the inclined surface opposite to the conveying direction of the exhaust gas in the condensing pipe, it can be ensured that the inclined surface can be in contact with the exhaust gas, so as to realize the cooling of the exhaust gas. At the same time, by inclining the inclined surface with respect to the axis of the condensation duct, it is possible to avoid disturbing the airflow and at the same time prevent the flow of the condensed liquid from being obstructed.
上述凸起结构511的结构可以有多种，例如，凸起结构包括在冷凝管道的内壁上呈阵列排布的多个片状凸起，每个片状凸起(所在平面)相对于冷凝管道的内壁向下倾斜，即，多个片状凸起的顶面形成前述斜面。The structure of the above-mentioned raised structure 511 can be various, for example, the raised structure includes a plurality of sheet-like protrusions arranged in an array on the inner wall of the condensing pipe, and each sheet-like protrusion (the plane where it is located) is opposite to the condensing pipe. The inner wall is inclined downward, that is, the top surfaces of the plurality of sheet-like protrusions form the aforementioned inclined surfaces.
综上所述，本发明实施例提供的半导体热处理设备，晶圆支撑组件在升入工艺腔室中后会密封工艺腔室底部的开口，可以保证工艺空间的密封性，从而可以满足工艺对洁净度的要求，并能够对半导体器件进行颗粒控制；同时，利用进气管路和排气管路分别与位于工艺腔室侧壁的底部的进气口和位于工艺腔室顶部的排气口连通，来实现进气和排气，可以实现对工艺空间的氧含量进行控制。并且，通过套设在工艺腔室上的加热筒加热工艺腔室，可以有效提高工艺空间内在其周向上的温度均匀性，同时该加热筒受外界环境影响较小，从而可以提高加热效率和温度控制精度。本发明实施例提供的半导体热处理设备，通过将上述晶圆支撑组件、进气管路和排气管路以及加热筒结合使用，不仅可以实现晶圆的颗粒和含氧量控制，而且还可以提高温度控制精度和温度均匀性，从而可以保证芯片性能，尤其可以满足先进封装制程对温度控制、氧含量控制、颗粒控制等的综合需求。To sum up, in the semiconductor heat treatment equipment provided by the embodiments of the present invention, after the wafer support assembly is lifted into the process chamber, the opening at the bottom of the process chamber can be sealed, which can ensure the tightness of the process space and can satisfy the requirements for cleanliness of the process. At the same time, the air inlet pipeline and the exhaust pipeline are used to communicate with the air inlet at the bottom of the side wall of the process chamber and the exhaust port at the top of the process chamber, respectively. To achieve intake and exhaust, the oxygen content of the process space can be controlled. In addition, by heating the process chamber through the heating cylinder sleeved on the process chamber, the temperature uniformity in the circumferential direction of the process space can be effectively improved, and at the same time, the heating cylinder is less affected by the external environment, so that the heating efficiency and temperature can be improved. control precision. The semiconductor heat treatment equipment provided by the embodiment of the present invention, by combining the above-mentioned wafer support assembly, air inlet and exhaust pipes, and heating cylinder, not only can control the particle and oxygen content of the wafer, but also can increase the temperature Control accuracy and temperature uniformity, so as to ensure chip performance, especially to meet the comprehensive requirements of advanced packaging processes for temperature control, oxygen content control, particle control, etc.

Claims (12)

  1. 一种半导体热处理设备，其特征在于，包括：工艺腔室、加热筒、晶圆支撑组件、进气管路、排气管路和气液分离装置，其中，A semiconductor heat treatment equipment is characterized by comprising: a process chamber, a heating cylinder, a wafer support assembly, an air inlet pipeline, an exhaust pipeline and a gas-liquid separation device, wherein,
    所述工艺腔室中设置有用于容纳所述晶圆支撑组件的工艺空间，所述工艺腔室底部设置有供所述晶圆支撑组件进出的开口，所述工艺腔室顶部设置有排气口，所述工艺腔室侧壁的底部设置有进气口；The process chamber is provided with a process space for accommodating the wafer support assembly, the bottom of the process chamber is provided with an opening for the wafer support assembly to enter and exit, and the top of the process chamber is provided with an exhaust port , the bottom of the side wall of the process chamber is provided with an air inlet;
    所述晶圆支撑组件可升降，所述晶圆支撑组件用于升入所述工艺腔室中后密封所述开口；The wafer support assembly can be lifted and lowered, and the wafer support assembly is used to seal the opening after being lifted into the process chamber;
    所述加热筒套设在所述工艺腔室上，用于加热所述工艺腔室；The heating cylinder is sleeved on the process chamber for heating the process chamber;
    所述进气管路与所述进气口连通，用于向所述工艺空间中输送气体；the air inlet pipeline is communicated with the air inlet, and is used for delivering gas into the process space;
    所述排气管路穿过所述加热筒与所述排气口连通，用于排出所述工艺空间中的气体；The exhaust pipeline is communicated with the exhaust port through the heating cylinder, and is used for exhausting the gas in the process space;
    所述气液分离装置与所述排气管路连通，用于液化并收集从所述工艺空间中排出的气体中的工艺副产物，并排出剩余的气体。The gas-liquid separation device is communicated with the exhaust pipeline for liquefying and collecting process by-products in the gas discharged from the process space, and discharging the remaining gas.
  2. 根据权利要求1所述的半导体热处理设备，其特征在于，所述加热筒包括保温外壳和多个加热单元，所述保温外壳套设在所述工艺腔室上，所述多个加热单元设置在所述保温外壳与所述工艺腔室相对的内侧壁上，分别用于对所述工艺空间中多个不同的区域进行加热；The semiconductor heat treatment equipment according to claim 1, wherein the heating cylinder comprises a thermal insulation casing and a plurality of heating units, the thermal insulation casing is sleeved on the process chamber, and the plurality of heating units are arranged on On the inner side wall opposite to the process chamber, the thermal insulation shell is respectively used for heating a plurality of different regions in the process space;
    所述半导体热处理设备还包括温度检测器和控制单元，其中，The semiconductor heat treatment apparatus further includes a temperature detector and a control unit, wherein,
    所述温度检测器用于实时检测所述工艺空间中与多个所述加热单元相对应的多个所述区域的实际温度值，并将其发送至所述控制单元；The temperature detector is used for real-time detection of the actual temperature values of a plurality of the regions in the process space corresponding to the plurality of the heating units, and sending them to the control unit;
    所述控制单元用于根据多个所述区域的实际温度值之间的差异，调节相应的所述加热单元的输出功率，以使所述多个区域的温度趋于一致。The control unit is configured to adjust the output power of the corresponding heating unit according to the difference between the actual temperature values of the multiple areas, so that the temperatures of the multiple areas tend to be consistent.
  3. 根据权利要求2所述的半导体热处理设备，其特征在于，所述温度 检测器包括检测管和设置在所述检测管中的多个热电偶，其中，The semiconductor heat treatment apparatus according to claim 2, wherein the temperature detector comprises a detection tube and a plurality of thermocouples disposed in the detection tube, wherein,
    所述检测管竖直设置在所述工艺空间中，且所述检测管的上端靠近所述工艺腔室的顶部，所述检测管的下端贯穿所述工艺腔室侧壁的底部并延伸至所述工艺腔室的外部；The detection tube is vertically arranged in the process space, and the upper end of the detection tube is close to the top of the process chamber, and the lower end of the detection tube penetrates the bottom of the side wall of the process chamber and extends to the outside of the process chamber;
    多个所述热电偶的位置与多个所述区域一一对应。The positions of a plurality of the thermocouples correspond to a plurality of the regions in one-to-one correspondence.
  4. 根据权利要求2所述的半导体热处理设备，其特征在于，所述保温外壳包括筒状侧壁、顶盖和保温套，其中，The semiconductor heat treatment equipment according to claim 2, wherein the thermal insulation shell comprises a cylindrical side wall, a top cover and a thermal insulation jacket, wherein,
    所述筒状侧壁套设在所述工艺腔室上；the cylindrical side wall is sleeved on the process chamber;
    所述顶盖设置在所述筒状侧壁的顶部，用于封堵所述筒状侧壁顶部的开口，且所述顶盖上设置有用于供所述排气管路穿过的通孔；The top cover is arranged on the top of the cylindrical side wall to block the opening at the top of the cylindrical side wall, and the top cover is provided with a through hole for the exhaust pipe to pass through ;
    所述保温套设置在所述筒状侧壁与所述工艺腔室之间，且靠近所述筒状侧壁的底部，用于封堵所述筒状侧壁与所述工艺腔室之间的环形间隔。The heat preservation sleeve is arranged between the cylindrical side wall and the process chamber, and is close to the bottom of the cylindrical side wall, and is used to block the space between the cylindrical side wall and the process chamber the annular interval.
  5. 根据权利要求4所述的半导体热处理设备，其特征在于，所述工艺腔室的所述排气口处设置有球形连接头；The semiconductor heat treatment equipment according to claim 4, wherein a spherical connector is provided at the exhaust port of the process chamber;
    所述排气管路进气端设置有球形法兰，所述球形法兰与所述球形连接头配合连接，所述排气管路的出气端与所述气液分离装置连通。The air inlet end of the exhaust pipeline is provided with a spherical flange, the spherical flange is matched and connected with the spherical connection head, and the air outlet end of the exhaust pipeline is communicated with the gas-liquid separation device.
  6. 根据权利要求5所述的半导体热处理设备，其特征在于，所述顶盖上的所述通孔中还设置有密封结构，所述密封结构包括第一环形密封件、第二环形密封件和固定组件，其中，所述通孔为阶梯孔，所述第一环形密封件位于所述阶梯孔中，套设在所述球形法兰上，所述第一环形密封件的外径小于所述阶梯孔位于其台阶面以下的孔径；所述第二环形密封件套设在所述排气管路的进气端上，且位于所述阶梯孔的台阶面上，所述第二环形密封件的外径小于所述阶梯孔位于所述台阶面以上的孔径；The semiconductor heat treatment equipment according to claim 5, wherein a sealing structure is further provided in the through hole on the top cover, and the sealing structure comprises a first annular sealing member, a second annular sealing member and a fixing member. The assembly, wherein the through hole is a stepped hole, the first annular seal is located in the stepped hole, sleeved on the spherical flange, and the outer diameter of the first annular seal is smaller than the stepped hole The hole is located below the stepped surface of the hole; the second annular seal is sleeved on the intake end of the exhaust pipe, and is located on the stepped surface of the stepped hole, and the second annular seal is The outer diameter is smaller than the aperture diameter of the stepped hole located above the stepped surface;
    所述固定组件与所述顶盖固定连接，且向下压住所述第二环形密封件和 所述第一环形密封件，以使二者产生压缩变形。The fixing assembly is fixedly connected with the top cover, and presses the second annular sealing member and the first annular sealing member downward, so as to cause compression deformation of the two.
  7. 根据权利要求1所述的半导体热处理设备，其特征在于，所述排气管路上沿气体排出方向依次设置有多个排气加热件，分别用于对所述排气管路在所述气体排出方向上的不同区域进行加热。The semiconductor heat treatment equipment according to claim 1, wherein a plurality of exhaust heating elements are arranged on the exhaust pipe in sequence along the gas discharge direction, and are respectively used for discharging the gas in the exhaust pipe. Heating in different areas in the direction.
  8. 根据权利要求7所述的半导体热处理设备，其特征在于，所述排气管路包括沿所述气体排出方向依次连接的第一过渡管和第二过渡管，其中，所述第一过渡管包括沿所述气体排出方向依次连接的第一垂直段、倾斜段和第二垂直段，所述倾斜段的进气端高于所述倾斜段的出气端；8. The semiconductor heat treatment equipment according to claim 7, wherein the exhaust line comprises a first transition pipe and a second transition pipe connected in sequence along the gas discharge direction, wherein the first transition pipe comprises a first vertical section, an inclined section and a second vertical section connected in sequence along the gas discharge direction, the gas inlet end of the inclined section is higher than the gas outlet end of the inclined section;
    所述第二过渡管竖直设置。The second transition pipe is arranged vertically.
  9. 根据权利要求1-8任意一项所述的半导体热处理设备，其特征在于，所述工艺腔室侧壁的底部沿周向设置有多个进气口；The semiconductor heat treatment equipment according to any one of claims 1-8, wherein the bottom of the side wall of the process chamber is provided with a plurality of air inlets along the circumferential direction;
    所述进气管路环绕所述工艺腔室设置，所述进气管路上设置有至少一个进气端和多个出气端，所述进气管路的所述多个出气端与所述多个进气口一一对应地连通；The air intake pipeline is arranged around the process chamber, at least one air intake end and a plurality of air outlet ends are arranged on the air intake pipeline, and the plurality of air outlet ends of the air intake pipeline are connected with the plurality of air intake ends. The mouths are connected in a one-to-one correspondence;
    所述进气管路上包覆有预热结构，用于对所述进气管路中的气体进行预热。The intake pipeline is covered with a preheating structure for preheating the gas in the intake pipeline.
  10. 根据权利要求1-8任意一项所述的半导体热处理设备，其特征在于，所述工艺腔室包括工艺管和歧管，其中，所述工艺管的底部敞开，顶部设置有所述排气口；所述歧管的顶部敞开，所述歧管的底部敞开形成所述开口，且所述歧管的顶端与所述工艺管的底端密封连接；所述歧管的底端在所述晶圆支撑组件升入所述工艺腔室中后与所述晶圆支撑组件密封连接，以密封所述歧管底部的开口；并且，所述歧管的侧壁上设置有所述进气口。The semiconductor heat treatment equipment according to any one of claims 1 to 8, wherein the process chamber comprises a process pipe and a manifold, wherein the bottom of the process pipe is open, and the top is provided with the exhaust port ; the top of the manifold is open, the bottom of the manifold is open to form the opening, and the top of the manifold is sealed with the bottom of the process pipe; the bottom of the manifold is in the crystal After being lifted into the process chamber, the circular support assembly is hermetically connected to the wafer support assembly to seal the opening at the bottom of the manifold; and the air inlet is provided on the side wall of the manifold.
  11. 根据权利要求1-8任意一项所述的半导体热处理设备，其特征在于，所述晶圆支撑组件包括叠置的晶圆支架、隔热结构和工艺门，所述晶圆支撑组件升入所述工艺腔室中后，所述晶圆支架和所述隔热结构位于所述工艺空间中，所述工艺门与所述工艺腔室的底端密封连接，以密封所述工艺腔室底部的开口；The semiconductor heat treatment equipment according to any one of claims 1-8, wherein the wafer support assembly comprises a stacked wafer support, a thermal insulation structure and a process door, and the wafer support assembly is lifted into the After entering the process chamber, the wafer holder and the thermal insulation structure are located in the process space, and the process door is sealed with the bottom end of the process chamber to seal the bottom of the process chamber. open;
    所述隔热结构用于对位于所述隔热结构上方的空间进行保温。The thermal insulation structure is used for thermal insulation of the space above the thermal insulation structure.
  12. 根据权利要求11所述的半导体热处理设备，其特征在于，所述隔热结构包括隔热支架和设置在所述隔热支架上的多个隔热板，且多个所述隔热板沿竖直方向间隔排布。The semiconductor heat treatment equipment according to claim 11, wherein the heat insulating structure comprises a heat insulating support and a plurality of heat insulating boards arranged on the heat insulating support, and a plurality of the heat insulating boards are vertically arranged. Spaced in the vertical direction.
PCT/CN2022/082963 2021-04-14 2022-03-25 Semiconductor heat treatment device WO2022218126A1 (en)

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