WO2022207792A1 - Licht emittierende vorrichtung und lidar-system - Google Patents
Licht emittierende vorrichtung und lidar-system Download PDFInfo
- Publication number
- WO2022207792A1 WO2022207792A1 PCT/EP2022/058571 EP2022058571W WO2022207792A1 WO 2022207792 A1 WO2022207792 A1 WO 2022207792A1 EP 2022058571 W EP2022058571 W EP 2022058571W WO 2022207792 A1 WO2022207792 A1 WO 2022207792A1
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- WO
- WIPO (PCT)
- Prior art keywords
- light
- emitting device
- optical element
- housing body
- adaptive optical
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4814—Constructional features, e.g. arrangements of optical elements of transmitters alone
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
Definitions
- a light-emitting device is specified.
- the emission profile of light-emitting semiconductor packages can typically be influenced by lenses or dielectric filters.
- Such optical components are usually selected during the production of the semiconductor package and can no longer be changed during operation. Additional external optical components are required in addition to the semiconductor package to adapt the radiation characteristics.
- At least one object of certain embodiments is to provide a light-emitting device.
- a light-emitting device has a light-emitting Semiconductor component, which is intended and set up to emit light during operation.
- light refers to electromagnetic radiation in a wavelength range from infrared to ultraviolet radiation.
- the light-emitting device can be set up and provided to emit light in a visible wavelength range.
- the emitted light can have one or more spectral components and can be monochromatic or mixed-colored, for example.
- the light-emitting semiconductor component has at least one light-emitting semiconductor chip or is embodied as at least one light-emitting semiconductor chip. This can mean in particular that the light-emitting semiconductor component can have one or more light-emitting semiconductor chips. Even if the following description describes a light-emitting semiconductor component that is designed as a light-emitting semiconductor chip purely by way of example, the following description also applies to a light-emitting device with a light-emitting semiconductor component that has a plurality of light-emitting semiconductor chips.
- the light-emitting semiconductor component and in particular the at least one light-emitting semiconductor chip has in particular a semiconductor layer sequence with an active region for generating light.
- the active region can in particular have or be an active layer in which the light is generated during operation.
- the semiconductor layer sequence by means of a Epitaxy method, for example by means of metal-organic vapor phase epitaxy (MOVPE) or molecular beam epitaxy (MBE) are produced.
- MOVPE metal-organic vapor phase epitaxy
- MBE molecular beam epitaxy
- the semiconductor layer sequence has semiconductor layers which are arranged one above the other along an arrangement direction in a vertical direction which is given by the growth direction. Perpendicular to the vertical direction, the layers of the semiconductor layer sequence each have a main extension plane. Directions parallel to the main extension plane of the semiconductor layers are referred to below as lateral directions.
- the light-emitting semiconductor component emits the light generated during operation along a main emission direction, which is directed perpendicular to the main extension plane of the semiconductor layers and thus in a vertical direction.
- the embodiments and features described below apply equally to a light-emitting semiconductor component in which the main emission direction is formed along another direction, for example along a direction parallel to the main extension plane of the semiconductor layers, ie along a lateral direction.
- An element arranged in the beam path of the light-emitting semiconductor component can preferably be arranged along the main emission direction.
- other arrangement directions are also possible as long as they are such that during operation light can be emitted from the light-emitting semiconductor component onto said element arranged in the beam path.
- the light-emitting semiconductor component has a
- the light coupling-out surface can be a main surface of the semiconductor chip which is arranged perpendicularly to the growth direction of the semiconductor layer sequence.
- the at least one semiconductor chip has a rear side opposite the light decoupling surface, which can form a mounting surface with which the semiconductor chip can be arranged, for example, on a carrier such as the housing body described below.
- the light coupling-out area and the back are connected to one another via chip side areas, which delimit the semiconductor chip in the lateral direction.
- the light generated in the active layer during operation can also be emitted at least partially via the chip side faces, for example.
- the proportion of the light that is emitted in the direction of the element can be increased by a dielectric angle filter arranged on the light coupling-out surface.
- the at least one semiconductor chip can also have a side surface as a light decoupling surface, so that the main emission direction is parallel to the
- Main extension plane is directed.
- a side surface opposite the light coupling-out surface forms a mounting surface of the semiconductor chip.
- a semiconductor chip which emits via a side surface can be mounted on a carrier with a main surface of the semiconductor layer sequence and, for example, emit light onto a reflector, through which the light is preferably directed in a vertical direction direction is deflected.
- a reflector can be embodied as an additional component provided for the at least one semiconductor chip.
- Such a reflector can particularly preferably also be formed, for example, as part of the semiconductor layer sequence of the at least one light-emitting semiconductor chip.
- the semiconductor layer sequence can have one or more trenches laterally next to the active region.
- a side surface of such a trench delimiting the active region can form a light coupling-out surface, while a side surface of the trench opposite the light coupling-out surface is inclined, for example at an angle of 45°, to the main extension plane of the semiconductor layers and forms a reflector surface.
- a reflective coating can be provided to form the reflector surface on the side surface of the trench.
- the light-emitting semiconductor component can have a semiconductor layer sequence based on different semiconductor material systems.
- a semiconductor layer sequence based on In x Ga y Ali xy As is suitable for long-wave, infrared to red radiation
- a semiconductor layer sequence based on In x Ga y Ali xy P is suitable for red to green radiation and for short-wave visible radiation
- a semiconductor layer sequence based on In x Ga y Ali xy N is suitable for radiation, ie in particular for green to blue radiation, and/or for UV radiation, where 0 ⁇ x ⁇ 1 and 0 ⁇ y ⁇ 1 applies in each case.
- the light-emitting semiconductor component i.e.
- the at least one light-emitting semiconductor chip can have contact layers, by means of which an electric current for generating light can be impressed into the semiconductor layer sequence during operation.
- further layers and elements can be present, for example a substrate on which the semiconductor layer sequence is applied, passivation layers and/or mirror layers.
- the light-emitting semiconductor component can have or be a light-emitting diode, for example.
- the light-emitting diode (LED) can be designed, for example, as a so-called volume emitter, as a thin-film semiconductor chip or as a flip chip, or at least have one of these.
- the light-emitting semiconductor component can have or be a laser diode.
- the light-emitting semiconductor component can be a surface-emitting laser diode, for example a VCSEL (vertical-cavity surface-emitting laser) or an HCSEL (horizontal-cavity surface-emitting laser). or a PCSEL (photonic-crystal surface-emitting laser).
- the light-emitting semiconductor component can have or be a superluminescent diode (SLED).
- the light-emitting semiconductor component can have a wavelength conversion material that can convert at least part of the light generated by the light-emitting semiconductor component during operation into light in a different wavelength range, so that mixed-color light can be generated, for example.
- mixed-color light can also be generated, for example, by a number of different light-emitting semiconductor chips.
- the light-emitting device has a housing body.
- the housing body can have a recess, for example, in which the light-emitting semiconductor component is arranged.
- the housing body can be designed, for example, as a carrier plate on which a ring forming a depression can be arranged around the light-emitting semiconductor component.
- a cover plate in particular as described further below, can be used, which has a thickening at the edge with which the cover plate can be arranged on the carrier plate.
- the light-emitting device has an adaptive optical element, which is arranged downstream of the light-emitting semiconductor component in the beam path of the light generated by the light-emitting semiconductor component during operation.
- the adaptive optical element is arranged in particular in or on the housing body and is therefore an integral part of the light-emitting device.
- the housing body is formed of the housing body
- housing body material in the form of a plastic in particular a thermoplastic or a thermoset, which can be produced, for example, by a molding process such as transfer molding, injection molding, compression molding or a combination thereof.
- the housing body can accordingly have, for example, a plastic body in the form of a plastic housing or as a result in essentially be educated.
- the plastic can have a silicone and/or an epoxy resin, for example, or else a silicone-epoxy hybrid material.
- the plastic can also have, for example, polyphthalamide (PPA), polymethyl methacrylate (PMMA), polyacrylate, polycarbonate and/or imide groups.
- the housing body can also have a ceramic material and thus have a ceramic housing, for example, or be designed as such.
- the housing body has at least one electrical contact element for making electrical contact with the elements arranged in and on the housing body, such as the light-emitting semiconductor component and the adaptive optical element.
- the at least one electrical contact element can be, for example, one or more conductor tracks, one or more electrical feedthroughs ("vias"), one or more leadframes or leadframe parts, one or more electrode surfaces and combinations thereof on one or more surfaces of the housing body material and/or embedded in the housing body material have or be formed thereby.
- the housing body can have a plurality of electrical contact elements as at least one electrical contact element.
- the housing body can have one or more leadframes or leadframe parts with the housing body material formed thereon.
- the housing body can be a so-called QFN housing ( QFN: "quad flat no leads”) or form at least part of it.
- the housing body has dimensions that are less than or equal to 5 cm or less or equal to 2 cm, or less than or equal to 1 cm, or less than or equal to 0.5 cm, or less than or equal to 0.3 cm.
- the light-emitting device is in the form of a so-called semiconductor package.
- the light-emitting device can particularly preferably be a surface-mountable component, ie a so-called SMD component (SMD: "surface-mounted device”), which can be mounted by soldering on a carrier such as a printed circuit board.
- SMD surface-mounted device
- the adaptive optical element has a plurality of structural elements.
- the adaptive optical element particularly preferably has a number of more than 7 structural elements in each direction parallel to the main plane of extension.
- the structural elements have an extent that is adapted to a wavelength of the light generated by the light-emitting semiconductor component. This can mean, for example, that the structural elements have an extent that is less than or equal to a wavelength of the light generated by the light-emitting semiconductor component.
- the adaptive optical element can have a sub-wavelength structure.
- the extent can be, for example, a length, a width, a height and/or a diameter or an average value of two or more of these dimensions.
- the structural elements can be columnar, for example. This can mean that the structural elements can have, for example, a cylindrical or a truncated cone shape with a round or polygonal base. Furthermore, it can also be that the structural elements at least a first group of structural elements with a first extent and a second group of
- the light generated by the light-emitting semiconductor component during operation can particularly preferably have at least one first and one second spectral component that differs therefrom, with the extension of the structural elements of the first group being related to the first spectral component and the extension of the structural elements of the second group being related to the second spectral component are adjusted. Additionally or alternatively, the two groups of structural elements can also affect light of a single emitted wavelength differently.
- the plurality of structural elements can preferably be arranged in a two-dimensional or three-dimensional matrix in a surrounding material, which can be solid, liquid or gaseous. It can particularly preferably be a regular matrix, ie a regular arrangement along a two-dimensional or three-dimensional lattice, at least in a rest state of the adaptive optical element.
- a material that surrounds the structural elements on more than one side, for example, is referred to as surrounding material.
- the structural elements can have an upper side and an opposite lower side with side surfaces connecting the upper side and the lower side.
- the surrounding material can, for example, border at least on the upper side and the side surfaces.
- the structural elements can be arranged, for example, on a supporting element.
- the adaptive optical element is provided and set up to influence and control a spatial arrangement and/or an electrical property of the structure elements. For example, a distance between at least some of the structural elements in the adaptive optical element can be influenced and changed. Alternatively or additionally, for example, a density of free charge carriers in the structural elements can be influenced and changed. Furthermore, it may be possible to influence and change the refractive index of a material surrounding the structural elements.
- the effective refractive index of the adaptive optical element radiated through can be influenced by structural elements in a material surrounding the structural elements with extensions of the structural elements in the range of the wavelength of a light shining through the structural elements and the surrounding material.
- structural elements can also be referred to as so-called meta-structures or meta-atoms.
- the optical properties of the effect brought about by the structural elements can be influenced and changed.
- an optical effect of the adaptive optical element on transmitted light can be changed dynamically by changing the structural elements or the material surrounding them and/or by mechanically deforming the adaptive optical element and thus by changing the arrangement of the structural elements.
- a dynamically changeable lens effect can be achieved, for example.
- the structural elements particularly preferably have a material with the highest possible refractive index, in particular a higher refractive index than a material surrounding the structural elements.
- the “refractive index” parameter always refers to the light generated by the light-emitting semiconductor component.
- the structural elements have or are made of one or more of the following materials: Si, Ge, T1O 2 , ZrCh, ZnO, ITO, InP, GaAs, InGaAs, metal.
- a suitable metal is, for example, one or more selected from Au, Ag, Pt, Pd.
- the material surrounding the structural elements preferably has a refractive index that is as low as possible and can, for example, comprise a gas such as air or a plastic material.
- the plastic material may include or be a polymer such as a fluoropolymer.
- the polymer can be a viscous, elastic or viscoelastic polymer.
- a liquid crystal material is also possible.
- the adaptive optical element has a dielectric elastomer actuator.
- the adaptive optical element preferably has an elastic or viscoelastic polymer that is arranged on or between electrodes.
- an electrical voltage By applying an electrical voltage to the electrodes, a deformation of the polymer can be achieved, for example via electrostatic attraction or repulsion of the electrodes, which can be dynamically controlled.
- the structural elements are preferably arranged in or on the dielectric elastomer actuator and thus preferably in or on the polymer. Deformation of the polymer can spatial arrangement of the structural elements are influenced, so that at least local changes in the effective refractive index can be effected.
- the adaptive optical element has a liquid crystal layer in which the structure elements are arranged.
- the adaptive optical element preferably has a
- Liquid crystal material disposed on or between electrodes.
- a changed refractive index of the liquid crystal material can be achieved, for example.
- a deformation can also be achieved at the same time, so that the adaptive optical element can also be designed as an actuator at the same time, as described above.
- the adaptive optical element has a dielectric layer between electrodes.
- the adaptive optical element preferably has a dielectric polymer, which is arranged on or between electrodes and in which the structural elements are embedded.
- a density of free charge carriers in the structural elements can be adjusted via the electrodes, as a result of which the refractive index of the structural elements can be influenced.
- a deformation can also be achieved at the same time, so that the adaptive optical element can also be designed as an actuator at the same time, as described above.
- the adaptive optical element has elastic electrodes.
- these can For example, a network with or made of carbon nanotubes (“carbon nanotubes”) such as single-wall carbon nanotubes (SWCNT), graphene flakes or metal nanowires, for example with or made of silver.
- carbon nanotubes such as single-wall carbon nanotubes (SWCNT), graphene flakes or metal nanowires, for example with or made of silver.
- the electrodes a transparent electrically conductive material such as a transparent conductive oxide (TCO: "transparent conductive oxide", for example if an elastic property of the electrodes is not necessary.
- TCO transparent conductive oxide
- the electrodes of the adaptive optical element can be applied to or embedded in a material described above, such as a polymer or a liquid crystal material, both in the case of elastic electrodes and in the case of inelastic electrodes. Furthermore, the electrodes can preferably be transparent to the light generated by the light-emitting semiconductor component.
- the electrodes can, for example, have a large surface area, be structured into sections and/or be structured in one piece, for example in the shape of a ring.
- electrical contact elements can be provided in the housing body for the electrical connection of the light-emitting semiconductor component and the adaptive optical element.
- the light-emitting semiconductor component can be electrically connected via at least one electrical contact element of the housing body.
- the adaptive optical element can be electrically connected via at least one electrical contact element of the housing body.
- the housing body can be in its interior or on a surface, for example on the surface of the recess,
- the housing body can have at least three electrical contact elements, with the light-emitting semiconductor component being electrically connected via at least a first and a second electrical contact element and the adaptive optical element being electrically connected at least via the second and a third electrical contact element.
- the second electrical contact element can provide, for example, a common reference potential for the light-emitting semiconductor component and the adaptive optical element.
- At least one electronic component can be arranged in the housing body, ie in the recess of the housing body and/or in the material of the housing body.
- the electronic component can have, for example, a control for the light-emitting semiconductor component and/or for the adaptive optical element or at least a part thereof.
- the housing body has a transparent cover plate.
- the cover plate may, for example, comprise or be made of glass, sapphire or an inelastic plastic such as a hard polymer.
- the cover plate can hermetically seal the depression in the housing body in which the light-emitting semiconductor component is arranged.
- the adaptive optical element can be arranged on the cover plate, so that the cover plate forms a carrier for the adaptive optical element.
- the adaptive optical element can preferably be attached to the cover plate be arranged on a side facing the light-emitting semiconductor component.
- a LIDAR system (LIDAR: "light detection and ranging", light detection and distance measurement) has the light-emitting device.
- the light-emitting device can particularly preferably be provided and set up on the basis of the embodiments and features described above that the LIDAR system has a changeable emission characteristic during operation, in particular by changing the distribution of the radiant flux, for example at least between a wide emission angle and a narrow emission angle.
- the light-emitting device described here can offer the advantage that a customer or user of the light-emitting device can change the emission profile of the emitted light during operation using the adaptive optical element integrated into the light-emitting device. For example, a distribution of the radiant flux over the hemisphere angle can be controlled.
- a distribution of the radiant flux over the hemisphere angle can be controlled.
- FOV Field Of View
- the light-emitting device can offer the advantage that identical devices can be used and sold for different applications and specific customer requirements with regard to the emission profile can still be met.
- Figure 1 shows a schematic representation of a light-emitting device according to an embodiment
- FIG. 2 shows a schematic representation of a light-emitting device according to a further exemplary embodiment
- FIGS. 3 to 5 show schematic representations of an adaptive optical element of a light-emitting device according to further exemplary embodiments
- FIGS. 6A to 6D show schematic representations of an adaptive optical element of a light-emitting device according to further exemplary embodiments
- FIG. 7 shows a schematic representation of a LIDAR
- FIG. 1 shows an exemplary embodiment of a light-emitting device 100.
- the light-emitting device 100 is in the form of a surface-mountable component and has a light-emitting semiconductor component 1 in a housing body 2.
- FIG. 1 shows an exemplary embodiment of a light-emitting device 100.
- the light-emitting device 100 is in the form of a surface-mountable component and has a light-emitting semiconductor component 1 in a housing body 2.
- FIG. 1 shows an exemplary embodiment of a light-emitting device 100.
- the light-emitting device 100 is in the form of a surface-mountable component and has a light-emitting semiconductor component 1 in a housing body 2.
- the light-emitting semiconductor component 1 can be a laser diode, an SLED or an LED, for example.
- the light-emitting semiconductor component 1 is embodied purely by way of example as a single semiconductor chip.
- the light-emitting semiconductor component 1 can also have a plurality of semiconductor chips.
- the semiconductor chip has a semiconductor layer sequence based on a suitable semiconductor material with an active region in which light 9 is generated during operation.
- the light-emitting semiconductor component 1 is a surface-emitting component which, during operation, emits light perpendicular to the main extension plane of the semiconductor layers of the semiconductor layer sequence via a light coupling-out surface 10 .
- the light-emitting semiconductor component 1 can be designed as an LED chip or also as a VCSEL or as a PCSEL.
- the light-emitting semiconductor component 1 can also be formed, for example, as an SLED, as an edge-emitting laser diode or as an HCSEL, which is rotated by 90° and mounted in the housing body 2 or which has one or more in the semiconductor layer sequence, for example Etching-integrated reflector surfaces inclined by 45°.
- the upper side of the light-emitting semiconductor component 1 is electrically contacted via a bonding wire 8, while the underside opposite the upper side and thus the light output surface, which forms the mounting surface, can be electrically contacted directly.
- the light-emitting semiconductor component 1 can also be electrically contact-connected via a plurality of bonding wires or also only by contact regions arranged on the underside
- the light-emitting semiconductor component 1 can additionally have a wavelength conversion material (not shown), which can convert at least part of the light 9 generated by the light-emitting semiconductor component 1 during operation into light in a different wavelength range, so that mixed-color light can be generated, for example.
- a wavelength conversion material not shown
- mixed-color light can also be generated, for example, by a number of different light-emitting semiconductor chips.
- the housing body 2 has a depression 20 in which the light-emitting semiconductor component 1 is arranged, mounted and electrically connected.
- the housing body 2 has electrical contact elements 21, 22, 23, which in the exemplary embodiment shown are formed by lead frame parts onto which a housing body material formed by a plastic material is molded, through which the depression 20 is also formed.
- the housing body 2 can be designed as a QFN-like housing, as shown.
- the housing body 2 For example, be designed as a ceramic-based housing or other package design.
- the housing body 2 has dimensions that are less than or equal to 5 cm, or less than or equal to 2 cm, or less than or equal to 1 cm, or less than or equal to 0.5 cm, or less than or equal to 0.3 cm.
- the dimensions can in particular be a length and a width of the mounting surface of the housing body 2 with the contact elements
- the light-emitting device 100 is designed as a so-called semiconductor package.
- the housing body 2 and thus the light-emitting device 100 are designed as an SMD component, which is provided with the electrical contact elements 21,
- 22, 23 can be soldered onto a carrier such as a printed circuit board.
- the light-emitting device has an adaptive optical element 3, which is arranged downstream of the light-emitting semiconductor component 1 in the beam path of the light 9 generated by the light-emitting semiconductor component 1 during operation.
- the adaptive optical element 3 is arranged in particular in or on the housing body 2 and is therefore an integral part of the light-emitting device 100.
- the housing body 2 has a transparent cover plate 29 which, for example, is a glass, sapphire or an inelastic plastic such as a comprises or consists of hard polymer.
- the cover plate 29 can close the depression 20 of the housing body 2, in which the light-emitting semiconductor component 1 is arranged, in particular also hermetically.
- the case body material 24 can, as shown in FIG 1, have, for example, a support surface surrounding the depression, on which the cover plate 29 is arranged.
- the cover plate 29 can be glued on or soldered onto the cover plate 29 and the housing body material 24 via corresponding soldering surfaces.
- the housing body 2 can be embodied, for example, as a carrier plate on which a ring forming a depression can be arranged around the light-emitting semiconductor component 1 .
- the cover plate 29 can have a thickening at the edge, with which the cover plate 29 can be arranged on the carrier plate.
- the adaptive optical element 3 is arranged on the cover plate 29 .
- the adaptive optical element 3 can preferably be arranged on the cover plate 29 on a side facing the light-emitting semiconductor component 1 . This can ensure that the adaptive optical element 3 can be protected by the housing body 2 from damaging influences from the environment.
- an arrangement outside of the recess 20 of the housing body 2 may also be possible, in which case an additional protective layer over the adaptive optical element 3 may be advantageous.
- the recess 20 in the housing body 2 is preferably free of a potting material at least in the area of the adaptive optical element 3 and filled with gas, for example with air or an inert protective gas.
- the light-emitting semiconductor component 1 can e.g. cast up to the top with a reflective, e.g. white, material, as indicated by the dashed lines in FIG.
- the cover plate 29 and the adaptive optical element 3 are therefore present instead of a conventional lens or a multi-lens array.
- the cover plate 29 can protect both the light-emitting semiconductor component 1 and the adaptive optical element 3 from environmental influences.
- the adaptive optical element 3 has electrodes 30, as is described in more detail below.
- the housing body 2 has corresponding electrical contact elements 22, 23, as was already the case for contacting the light-emitting semiconductor component 1.
- conductor tracks 25 can be provided on an inner wall of the recess 20 and/or vias through the housing body material 24 (not shown) in order to electrically connect the adaptive optical element 3 to the electrical contact elements 22, 23.
- the housing body 2 may have at least three electrical contact elements 21, 22, 23, as shown, with the light-emitting semiconductor component 1 having at least a first and a second electrical contact element 21, 22 is electrically connected and the adaptive optical element 3 is electrically connected at least via the second electrical contact element 22 and a third electrical contact element 23.
- the second electrical contact element 22 can, for example, provide a common reference potential for the light-emitting semiconductor component 1 and the adaptive optical element 3 .
- the light-emitting semiconductor component 1 and the adaptive optical element 3 can also be electrically connected separately from one another, so that the housing body 2 can have at least four electrical contact elements in this case.
- more than electrical contact elements can also be present.
- FIG. 2 shows a further exemplary embodiment of the light-emitting device 100, which has at least one electronic component 4 in the housing body 2 in comparison to the exemplary embodiment in FIG.
- the at least one electronic component 4 can be embedded, for example, in the housing body material 24 of the housing body 2 .
- at least one electronic component can also be arranged in the depression 20 of the housing body 2 .
- the at least one electronic component 4 can, for example, Have control for the light-emitting semiconductor component 1 and / or for the adaptive optical element 2 or at least a part thereof.
- the housing body 2 can also have a suitable number of electrical contact elements.
- the electronic component 4 can also contain a digital interface which is connected to the electrical contact elements.
- an interface for radio control for example via WLAN or Bluetooth, can be included.
- the housing body 2 can thus contain further electronic components in the form of at least one electronic component 4, such as a capacitor for pulsed operation, an integrated circuit (IC: "integrated circuit") for signal control of the light-emitting semiconductor component 1 and/or for controlling the adaptive optical element 3.
- the (high) voltage required to control the adaptive optical element 3 can optionally be generated from the operating voltage by a suitable electronic component within the housing body 2.
- at least two electrical contact elements can be provided on the outside of the housing body 2 for the electrical supply and at least one further electrical contact element for the optionally digital control of the light-emitting semiconductor component 1 and/or for controlling the adaptive optical element 3.
- the cover plate 29 with the adaptive optical element 3 is shown enlarged in FIG.
- the adaptive optical element 3 has a plurality of structural elements 31 or in a supporting element 39 .
- Each of the structural elements 31 has an extension that is adapted to a wavelength of the light generated by the light-emitting semiconductor component.
- the structure elements 31 can have an extent that is less than or equal to a wavelength of the light generated by the light-emitting semiconductor component.
- the adaptive optical element 3 can have a sub-wavelength structure.
- the structural elements 31 can preferably be columnar and have a cylindrical or truncated shape with a round or polygonal base.
- the adaptive optical element 3 is provided and set up to influence and control a spatial arrangement and/or an electrical property of the structure elements 31 .
- a distance between at least some or all of the structural elements 31 in the adaptive optical element 3 can be influenced and changed in a targeted manner.
- a density of free charge carriers in the structural elements 31 can be specifically influenced and changed.
- the plurality of structural elements can preferably be arranged in a two-dimensional matrix as shown or also in a three-dimensional matrix in a surrounding material 32 which can be solid, liquid or, as shown in FIG. 3, gaseous.
- the surrounding material can be, for example, air or act as an inert gas sealed in the cavity of the case body. It can particularly preferably be a regular matrix, ie a regular arrangement along a two-dimensional or three-dimensional lattice, at least when the adaptive optical element 3 is in a state of rest.
- the structural elements 31 in the material 32 surrounding the structural elements 31 can form an effective material, which can also be referred to as meta-material, whose effective refractive index, due to the expansion of the structural elements 31 in the range of the wavelength of one of the structural elements 31 and the surrounding Material 32 can be influenced by the structural elements 31 transmitted light.
- an optical effect can be changed dynamically by changing the structural elements 31 or the material 32 surrounding them and/or by mechanically deforming the adaptive optical element 3 and thus by changing the arrangement of the structural elements 31 .
- a dynamically changeable lens effect can be achieved, for example.
- the structure elements 31 can be produced, for example, by a lithography and etching method, in which a surface structure corresponding to the desired shape and arrangement of the structure elements 31 can be produced in a plate or layer made from the material of the structure elements.
- the surface texture can lead to formation of the structural elements are detached from the remaining material.
- the surface structure and thus the structural elements 31 that are later separated can be shaped, for example, with a plastic material that can form a stabilizing matrix. After the structural elements 31 have been detached and transferred to a further element of the adaptive optical element, the plastic material can be removed or can also remain as the surrounding material 32 .
- the adaptive optical element 3 also has an active material 33 which can be used to influence and change the adaptive optical element 3 .
- the structural elements 31 can be transferred to a dielectric elastomer actuator as the supporting element 39, as is shown in the exemplary embodiment in FIG.
- the adaptive optical element 3 preferably has an elastic or viscoelastic polymer as active material 33, which is arranged on or, as indicated in FIG. 3, between electrodes 30.
- an electrical voltage to the electrodes 30
- a deformation of the polymer can be achieved, for example via an electrostatic attraction of the electrodes 30, which can be dynamically controlled.
- the structural elements 31 are arranged in or, as shown in FIG.
- the spatial arrangement of the structural elements 31 can be influenced by deforming the polymer, so that at least local changes in the effective refractive index of the adaptive optical element 3 can be brought about.
- the structural elements 31 particularly preferably have a material with the highest possible refractive index, in particular a higher refractive index than the material 32 surrounding the structural elements 31 .
- the structural elements 31 have or are made of one or more of the following materials: Si, Ge, T1O2, ZrCh, ZnO, ITO, InP, GaAs, InGaAs, metal.
- a suitable metal is, for example, one or more selected from Au, Ag, Pt, Pd.
- the material 32 surrounding the structural elements 31 preferably has as low an index of refraction as possible in order to maximize the effect of scattering and, as shown, can be, for example, a gas such as air or an inert gas.
- the adaptive optical element 3 particularly preferably has elastic electrodes 30 .
- elastic electrodes 30 can be formed, for example, by a network with or made of carbon nanotubes, such as SWCNT, with or made of graphene flakes and/or with or made of metal nanowires, for example with or made of silver.
- the electrodes 30 can have a transparent electrically conductive material such as a TCO, for example if an elastic property of the electrodes is not necessary or if TCO (nano)particles are embedded in an elastic matrix material.
- the electrodes and also the polymer between the electrodes are as transparent as possible, but at least partially transparent, for the light generated by the light-emitting semiconductor component during operation.
- the electrodes 30 of the adaptive optical element 3 can be based on a previously described method both in the case of elastic electrodes and in the case of inelastic electrodes Material such as a polymer applied or embedded therein. Furthermore, as described above, the electrodes 30 can preferably be transparent to the light generated by the light-emitting semiconductor component. As shown in FIG. 3, the electrodes 30 can have a large surface area. Furthermore, one or more electrodes 30 can also be structured in sections and/or structured in one piece, for example ring-shaped, as explained further below.
- the material 32 surrounding the structural elements 31 can also include or be a plastic material, for example.
- the plastic material may include or be a polymer such as a fluoropolymer.
- the polymer in this case can be the active material 33, ie, for example, the elastic or viscoelastic polymer of the dielectric elastomer actuator, as shown in FIG.
- the structure elements 31 are therefore arranged between the electrodes 30 and thus within the active material 33 and thus also within the supporting element 39 .
- the layer thickness of the active material 33 can be greater than the extent of the structural elements 32 in the direction perpendicular to the layer of the active material 33.
- the adaptive optical element has a liquid crystal layer in which the structure elements are arranged.
- the adaptive optical element has a liquid crystal material that is arranged on or between electrodes. Through by applying an electrical voltage to the electrodes 30, for example, a refractive index of the liquid crystal material can be achieved. Furthermore, for example, a deformation can also be achieved at the same time, so that the adaptive optical element 3 can also be designed as an actuator at the same time, as described above.
- the adaptive optical element 3 can have a dielectric layer as the active material 33 between the electrodes 30, in which the structural elements 31 are embedded, it being possible to set a density of free charge carriers in the structural elements 31 via the electrodes 30, whereby the refractive index of the Structural elements 31 can be influenced. Furthermore, for example, a deformation can also be achieved at the same time, so that the adaptive optical element 3 can also be designed as an actuator at the same time, as described above.
- the emission of the light-emitting semiconductor component is particularly advantageously monochromatic, since the dimensions d of the structure elements 31 must be adapted to the wavelength of the light, where d ⁇ 1/n applies, where n is the refractive index of the structure elements 31 .
- d the dimensions of the structure elements 31 must be adapted to the wavelength of the light, where d ⁇ 1/n applies, where n is the refractive index of the structure elements 31 .
- several wavelengths can also be influenced, for example in the case of white light, as is required for headlight applications, for example.
- the structural elements 31 at least a first group 35 of structural elements 31 with a first extent and a second group 36 of structural elements 31 with a second Have extent and the first extent is different from the second extent.
- the light generated by the light-emitting semiconductor component during operation can particularly preferably have at least a first and a second spectral component that differs therefrom, and the extent of the structural elements 31 of the first group 35 can be adapted to the first spectral component and the extent of the structural elements 31 of the second Group 36 can be matched to the second spectral component. Furthermore, more than two groups with structural elements 31 of different sizes can also be present.
- FIGS. 6A and 6B adaptive optical elements with large-area electrodes are shown in a sectional view and in a plan view.
- the structure elements can be arranged outside (FIG. 6A) or inside (FIG. 6B) of the two electrodes 30 and thus outside or inside the active material 33 .
- the electrodes 30 upon application of an electrical voltage, the electrodes 30 approach each other, compressing the polymer volume formed by the active material 33 in the direction perpendicular to the electrodes 30 and at the same time stretching it in the lateral direction.
- the structure elements 31 are given an extended lateral distance from one another, as a result of which the scattering effect and thus the radiation profile can be changed.
- these can, for example, also be arranged in a ring around the emission area, as is shown in FIG. 6C.
- the ring then compresses its center with the structural elements 31 by applying a voltage.
- at least one of the electrodes can also be structured into a plurality of regions that can be controlled independently of one another, as is shown in FIG.
- a large-area electrode can also be structured, for example, into a plurality of regions that can be controlled independently of one another.
- FIG. 7 shows a LIDAR system 1000 with a light-emitting device 100 as described above as a transmission unit.
- the light-emitting device 100 is provided and set up such that the LIDAR system 1000 has a changeable emission characteristic 99, 99', 99'' during operation, as indicated in FIG. 7 by different radiation cones.
- a change in the distribution of the radiant flux can be achieved by the adaptive optical element of the light-emitting device 100 .
- a lateral displacement of the emitted light cone during operation is also possible, as is indicated in connection with the emission characteristic 99''.
- the light-emitting device 100 emits, for example, at least one transmitter signal, which can be a light pulse, for example, which is emitted in the form of a single pulse with a specific pulse frequency.
- the transmitter signal instead of a Individual pulses, for example, also have a pulse train, ie a plurality of pulses, and/or a pulse modulated in terms of its amplitude, or an amplitude- and/or phase-modulated continuous light beam.
- the LIDAR system 1000 can furthermore have a detector unit 200, for example in the form of a photodiode or a photodiode array, which is provided and set up to receive a return signal which has at least part of the transmitter signal reflected back from an external object.
- the return signal can deviate from the transmitter signal due to the interaction of the transmitter signal with an object, for example with regard to the course over time, a spectral composition, an amplitude and/or a phase.
- the return signal can correspond to a transmitter signal that is attenuated and/or at least partially frequency-shifted and/or phase-shifted, at least with respect to some spectral components.
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Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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CN202280026019.6A CN117099220A (zh) | 2021-04-01 | 2022-03-31 | 发光器件和lidar*** |
US18/552,291 US20240195143A1 (en) | 2021-04-01 | 2022-03-31 | Light-emitting device and lidar system |
DE112022001892.5T DE112022001892A5 (de) | 2021-04-01 | 2022-03-31 | Licht emittierende vorrichtung und lidar-system |
Applications Claiming Priority (2)
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DE102021108349.4A DE102021108349A1 (de) | 2021-04-01 | 2021-04-01 | Licht emittierende vorrichtung und lidar-system |
DE102021108349.4 | 2021-04-01 |
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WO2022207792A1 true WO2022207792A1 (de) | 2022-10-06 |
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PCT/EP2022/058571 WO2022207792A1 (de) | 2021-04-01 | 2022-03-31 | Licht emittierende vorrichtung und lidar-system |
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US (1) | US20240195143A1 (de) |
CN (1) | CN117099220A (de) |
DE (2) | DE102021108349A1 (de) |
WO (1) | WO2022207792A1 (de) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100060821A1 (en) * | 2007-04-19 | 2010-03-11 | Koninklijke Philips Electronics N.V. | Light output device and control method |
EP2587561A2 (de) * | 2011-10-26 | 2013-05-01 | LG Innotek Co., Ltd. | Lichtquellenmodul |
US20190019779A1 (en) * | 2017-07-12 | 2019-01-17 | Samsung Electronics Co., Ltd. | Light emitting device package and display device using the same |
DE102018113711A1 (de) * | 2018-06-08 | 2019-12-12 | Osram Opto Semiconductors Gmbh | Apparat und scheinwerfer |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US6034811A (en) | 1998-01-28 | 2000-03-07 | Seaver; George | Stress-optic beam scanner, system and method |
DE102019112338A1 (de) | 2019-05-10 | 2020-11-12 | Bircher Reglomat Ag | 3D Sensorsystem, betreibbar in verschiedenen Betriebsmodi in Abhängigkeit eines Betriebszustandes eines Verschließkörpers |
-
2021
- 2021-04-01 DE DE102021108349.4A patent/DE102021108349A1/de not_active Withdrawn
-
2022
- 2022-03-31 CN CN202280026019.6A patent/CN117099220A/zh active Pending
- 2022-03-31 US US18/552,291 patent/US20240195143A1/en active Pending
- 2022-03-31 DE DE112022001892.5T patent/DE112022001892A5/de active Pending
- 2022-03-31 WO PCT/EP2022/058571 patent/WO2022207792A1/de active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100060821A1 (en) * | 2007-04-19 | 2010-03-11 | Koninklijke Philips Electronics N.V. | Light output device and control method |
EP2587561A2 (de) * | 2011-10-26 | 2013-05-01 | LG Innotek Co., Ltd. | Lichtquellenmodul |
US20190019779A1 (en) * | 2017-07-12 | 2019-01-17 | Samsung Electronics Co., Ltd. | Light emitting device package and display device using the same |
DE102018113711A1 (de) * | 2018-06-08 | 2019-12-12 | Osram Opto Semiconductors Gmbh | Apparat und scheinwerfer |
Also Published As
Publication number | Publication date |
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DE102021108349A1 (de) | 2022-10-06 |
DE112022001892A5 (de) | 2024-01-18 |
CN117099220A (zh) | 2023-11-21 |
US20240195143A1 (en) | 2024-06-13 |
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