WO2022185545A1 - 半導体装置の製造方法、半導体装置、電力変換装置及び移動体 - Google Patents
半導体装置の製造方法、半導体装置、電力変換装置及び移動体 Download PDFInfo
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- WO2022185545A1 WO2022185545A1 PCT/JP2021/008781 JP2021008781W WO2022185545A1 WO 2022185545 A1 WO2022185545 A1 WO 2022185545A1 JP 2021008781 W JP2021008781 W JP 2021008781W WO 2022185545 A1 WO2022185545 A1 WO 2022185545A1
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- semiconductor chip
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- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 238000000034 method Methods 0.000 title claims description 16
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 56
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- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/63—Connectors not provided for in any of the groups H01L24/10 - H01L24/50 and subgroups; Manufacturing methods related thereto
- H01L24/65—Structure, shape, material or disposition of the connectors prior to the connecting process
Definitions
- the present disclosure relates to a semiconductor device manufacturing method, a semiconductor device, a power conversion device, and a moving body.
- a semiconductor device in which electrodes are soldered to a metal pattern on an insulating substrate.
- solder is applied in advance to the upper surface of the metal pattern or the lower surface of the electrode (see, for example, Patent Document 1). The molten solder naturally spreads out to form a solder fillet.
- solder fillet formed by the conventional manufacturing method did not cover the top surface of the electrode, so a strong joint could not be obtained, and the life of the solder joint was short.
- the present disclosure has been made to solve the problems described above, and its object is to obtain a method for manufacturing a semiconductor device, a semiconductor device, a power conversion device, and a moving body that can improve reliability and production efficiency. It is.
- a method for manufacturing a semiconductor device includes steps of bonding a semiconductor chip to a metal pattern of an insulating substrate; placing a first solder; providing a second solder between the upper surface of the metal pattern and the lower surface of the electrode; melting the first solder and the second solder; fusing one solder through the groove with the second solder to form a solder fillet covering the top surface of the electrode while joining the top surface of the metal pattern and the bottom surface of the electrode; It is characterized by having
- the first solder is placed on the concave portion of the upper surface of the electrode, the first solder and the second solder are melted, and the melted first solder is fused with the second solder through the groove. form a solder fillet.
- the electrodes can be wrapped in the solder fillet to obtain a strong joint, and the life of the joint can be extended.
- the first solder since the first solder is put into the concave portion, the first solder does not drop from the upper surface of the electrode during soldering, which improves workability. Since the first solder can be quantified, the solder joint quality can be stabilized. As a result, reliability and production efficiency can be improved.
- FIG. 1 is a cross-sectional view showing a semiconductor device according to a first embodiment
- FIG. 4 is a perspective view showing the lower portion of the electrode according to Embodiment 1
- FIG. 4 is a cross-sectional view showing a joint portion between an electrode and a metal pattern according to Embodiment 1
- FIG. 4 is a cross-sectional view showing a step of joining the electrode and the metal pattern according to Embodiment 1
- FIG. It is sectional drawing which shows the joining process of the electrode and metal pattern which concern on a comparative example. It is sectional drawing which shows the joining process of the electrode and metal pattern which concern on a comparative example.
- FIG. 12 is a perspective view showing the lower portion of the electrode according to the second embodiment;
- FIG. 12 is a perspective view showing the lower portion of the electrode according to the second embodiment
- FIG. 8 is a cross-sectional view showing a joint portion between an electrode and a metal pattern according to Embodiment 2;
- FIG. 11 is a perspective view showing a method of manufacturing a semiconductor device according to a second embodiment;
- FIG. 11 is a perspective view showing a modification of the lower portion of the electrode according to the second embodiment;
- FIG. 11 is a cross-sectional view showing a joint portion between an electrode and a metal pattern according to Embodiment 3;
- FIG. 11 is a perspective view showing a method of manufacturing a semiconductor device according to a third embodiment;
- FIG. 11 is a cross-sectional view showing a method of manufacturing a semiconductor device according to a third embodiment;
- FIG. 11 is a block diagram showing the configuration of a power conversion system to which a power conversion device according to Embodiment 4 is applied;
- FIG. 12 is a diagram showing a moving object according to Embodiment 5;
- FIG. 1 is a cross-sectional view showing a semiconductor device according to Embodiment 1.
- FIG. An insulating substrate 2 is provided on a radiator plate 1 made of metal or the like.
- the insulating substrate 2 has an insulating plate 3 made of ceramic or the like, a metal pattern 4 on the lower surface of the insulating plate 3 , and a metal pattern 5 on the upper surface of the insulating plate 3 .
- the metal pattern 4 is joined to the radiator plate 1 by soldering or the like.
- a lower surface electrode of the semiconductor chip 6 is joined to the metal pattern 5 by soldering or the like.
- the top electrodes of the semiconductor chip 6 are wire-connected to other semiconductor chips or electrodes.
- the semiconductor chip 6 is an IGBT or Diode made of Si, but may be a SiC-MOSFET or SiC-SBD.
- the lower part of the electrode 7 is joined to the metal pattern 5.
- a case 8 is provided on the outer circumference of the radiator plate 1 and surrounds the insulating substrate 2 , the semiconductor chip 6 and the electrodes 7 .
- a sealing material 9 such as silicone gel is provided inside the case 8 to seal the insulating substrate 2 , the semiconductor chip 6 , and the lower portions of the electrodes 7 .
- a lid 10 is adhered to the upper surface of the case 8 with an adhesive 11 or the like to cover the upper side of the semiconductor chip 6 and the like.
- the electrode 7 protrudes upward from the sealing material 9 and the lid 10 and is drawn out of the device.
- FIG. 2 is a perspective view showing the lower portion of the electrode according to Embodiment 1.
- FIG. The lower part of the electrode 7 is bent laterally.
- a recess 12 is provided on the upper surface thereof.
- a groove 13 extending from the concave portion 12 to the side surface is also provided on the upper surface of the electrode 7 .
- the planar shape of the recess 12 is quadrangular, it may be circular.
- the depth of the groove 13 is about 1/3 of the thickness of the electrode 7 .
- the depth of the recess 12 is shallower than that of the groove 13, but may be the same as that of the groove 13.
- FIG. 3 is a cross-sectional view showing a joint portion between an electrode and a metal pattern according to Embodiment 1.
- FIG. A solder fillet 14 joins the metal pattern 5 and the bottom surface of the electrode 7 .
- Solder fillet 14 entirely covers the bent portion of electrode 7 . That is, the solder fillet 14 covers not only the bottom surface and side surfaces of the electrode 7 but also the top surface of the electrode 7 .
- the interiors of the recesses 12 and the grooves 13 are filled with solder fillets 14 .
- FIG. 4 is a cross-sectional view showing a step of joining an electrode and a metal pattern according to Embodiment 1.
- FIG. 4 is a cross-sectional view showing a step of joining an electrode and a metal pattern according to Embodiment 1.
- the semiconductor chip 6 is bonded to the metal pattern 5 of the insulating substrate 2 .
- a concave portion 12 and a groove 13 are formed on the upper surface of the electrode 7 by pressing or the like.
- a specified amount of first solder 15 such as cream solder or plate solder is placed on the concave portion 12 on the upper surface of the electrode 7 in advance.
- a flux 16 that promotes solder wettability may be dripped into the concave portion 12 .
- a second solder 17 such as cream solder is applied to the upper surface of the metal pattern 5 facing the lower surface of the electrode 7 .
- the second solder 17 may be applied to the bottom surface of the electrode 7 .
- a second solder 17 is provided between the upper surface of the metal pattern 5 and the lower surface of the electrode 7 by any method.
- the semiconductor device is manufactured by performing sealing with the sealing material 9 or the like.
- FIG.5 and FIG.6 is sectional drawing which shows the joining process of the electrode and metal pattern which concerns on a comparative example.
- the first solder 15 is not placed on the upper surface of the electrode 7, and only the second solder 17 is used. Therefore, since the solder fillet 14 is formed only by the natural wetting and spreading of the molten second solder 17, the thickness of the solder fillet 14 cannot be increased. As a result, the solder fillet 14 is formed only up to about half the thickness of the electrode 7 in FIG. In FIG. 6, solder fillet 14 is formed up to the thickness of electrode 7 but does not cover the top surface of electrode 7 .
- solder fillet 14 it is necessary for a worker to always be present and visually confirm the formation state of the solder fillet 14 and the like. In some cases, rework of solder fillet 14 formation is required. Therefore, it is difficult to reduce the number of man-hours and shorten the construction period, resulting in poor workability.
- the present embodiment a prescribed amount of the first solder 15 is placed in advance on the concave portion 12 of the upper surface of the electrode 7, and the first solder 15 and the second solder 17 are melted and melted.
- First solder 15 is fused with second solder 17 through groove 13 to form solder fillet 14 .
- the electrodes 7 can be wrapped with the solder fillet 14 to obtain a strong joint, and the life of the joint can be extended.
- the first solder 15 since the first solder 15 is put into the recess 12, the first solder 15 does not drop from the upper surface of the electrode 7 during soldering, which improves workability. Since the first solder 15 can be quantified, the solder joint quality can be stabilized. As a result, reliability and production efficiency can be improved.
- Embodiment 2. 7 is a perspective view showing a lower portion of an electrode according to Embodiment 2.
- the electrode 7 has a tip portion 7a and a body portion 7b thicker than the tip portion 7a.
- the upper surface of the tip portion 7a is lower than the upper surface of the main body portion 7b.
- the lower surface of the tip portion 7a is higher than the lower surface of the main body portion 7b.
- FIG. 8 is a cross-sectional view showing a joint portion between an electrode and a metal pattern according to Embodiment 2.
- FIG. Solder fillet 14 entirely covers the bent portion of electrode 7 .
- Other configurations of the semiconductor device are the same as those of the first embodiment.
- FIG. 9 is a perspective view showing the manufacturing method of the semiconductor device according to the second embodiment.
- the tip 7a of the electrode 7 is sandwiched between U-shaped solder plates 18 from above and below.
- the plate solder 18 is melted by bringing the lower surface of the plate solder 18 into contact with the heated metal pattern 5 .
- a solder fillet 14 covering the upper surface of the electrode 7 is formed while joining the metal pattern 5 and the lower surface of the electrode 7 together.
- the solder fillet 14 also covers the upper surface of the main body portion 7b with a thin film.
- the solder melting time is shortened, and the soldering work time can be shortened. Further, the U-shaped plate solder 18 sandwiches the thin tip portion 7a so that it is difficult to fall off from the electrode 7, thereby improving workability.
- Other configurations and effects are the same as those of the first embodiment.
- FIG. 10 is a perspective view showing a modification of the lower portion of the electrode according to Embodiment 2.
- FIG. 7-9, the tip portion 7a of the electrode 7 is a thin flat plate, but in FIG. 10, the tip portion 7a of the electrode 7 has an acute angle shape. This makes it easier to sandwich the tip of the electrode 7 between the U-shaped solder plates 18 .
- Embodiment 3. 11 is a cross-sectional view showing a joint portion between an electrode and a metal pattern according to Embodiment 3.
- FIG. A columnar protrusion 19 is provided in the central portion of the upper surface of the electrode 7 .
- Solder fillet 14 entirely covers the bent portion of electrode 7 .
- Other configurations of the semiconductor device are the same as those of the first embodiment.
- FIG. 12 is a perspective view showing the method of manufacturing the semiconductor device according to the third embodiment.
- 13A and 13B are cross-sectional views showing the method for manufacturing the semiconductor device according to the third embodiment.
- an electrode 7 having a columnar projection 19 provided in the center of the upper surface and a plate solder 21 having a round hole-shaped opening 20 in the center are prepared.
- plate solder 21 is placed on the upper surface of electrode 7 and protrusion 19 is inserted into opening 20 . Thereby, the plate solder 21 is fixed on the upper surface of the electrode 7 .
- Solder 22 such as cream solder is applied to the upper surface of the metal pattern 5 facing the lower surface of the electrode 7 .
- solder 22 may be applied to the lower surface of electrode 7 .
- Solder 22 is provided between the upper surface of metal pattern 5 and the lower surface of electrode 7 by any method.
- the plate solder 21 and the solder 22 are melted and fused together to form a solder fillet 14 covering the upper surface of the electrode 7 while joining the upper surface of the metal pattern 5 and the lower surface of the electrode 7 .
- the semiconductor device is manufactured by performing sealing with the sealing material 9 or the like.
- a specified amount of plate solder 21 is placed on the upper surface of the electrode 7 in advance, and the plate solder 21 and the solder 22 are melted and fused together to form the solder fillet 14 .
- the electrodes 7 can be wrapped with the solder fillet 14 to obtain a strong joint, and the life of the joint can be extended.
- the protrusion 19 of the electrode 7 is inserted into the opening 20 of the plate solder 21, the plate solder 21 does not drop from the upper surface of the electrode 7 during soldering, thereby improving workability. Since the plate solder 21 can be quantified, the solder joint quality can be stabilized. As a result, reliability and production efficiency can be improved.
- mass productivity can be achieved.
- the semiconductor chip 6 is not limited to being made of silicon, and may be made of a wide bandgap semiconductor having a larger bandgap than silicon.
- Wide bandgap semiconductors are, for example, silicon carbide, gallium nitride-based materials, or diamond.
- a semiconductor chip formed of such a wide bandgap semiconductor can be miniaturized because of its high withstand voltage and allowable current density.
- a semiconductor device incorporating this semiconductor chip can also be miniaturized and highly integrated.
- the heat resistance of the semiconductor chip is high, the radiation fins of the heat sink can be made smaller, and the water-cooled portion can be air-cooled, so that the semiconductor device can be further made smaller.
- the power loss of the semiconductor chip is low and the efficiency is high, the efficiency of the semiconductor device can be improved.
- Embodiment 4 applies the semiconductor device according to the first to third embodiments described above to a power converter.
- the power conversion device is, for example, an inverter device, a converter device, a servo amplifier, a power supply unit, or the like.
- the present invention is not limited to a specific power converter, a case where the present invention is applied to a three-phase inverter will be described below.
- FIG. 14 is a block diagram showing the configuration of a power conversion system to which the power converter according to Embodiment 4 is applied.
- This power conversion system includes a power supply 100 , a power converter 200 and a load 300 .
- the power supply 100 is a DC power supply and supplies DC power to the power converter 200 .
- the power supply 100 can be configured with various devices, for example, it can be configured with a DC system, a solar battery, a storage battery, or it can be configured with a rectifier circuit or an AC/DC converter connected to an AC system. .
- power supply 100 may be configured by a DC/DC converter that converts DC power output from a DC system into predetermined power.
- the power conversion device 200 is a three-phase inverter connected between the power supply 100 and the load 300 , converts the DC power supplied from the power supply 100 into AC power, and supplies the AC power to the load 300 .
- the power conversion device 200 controls the main conversion circuit 201 that converts DC power into AC power and outputs it, the drive circuit 202 that outputs drive signals for driving the switching elements of the main conversion circuit 201, and the drive circuit 202. and a control circuit 203 that outputs a control signal to the drive circuit 202 .
- the load 300 is a three-phase electric motor driven by AC power supplied from the power converter 200 .
- the load 300 is not limited to a specific application, but is an electric motor mounted on various electrical equipment, such as a hybrid vehicle, an electric vehicle, a railway vehicle, an elevator, or an electric motor for air conditioning equipment.
- the power conversion device 200 will be described in detail below.
- the main conversion circuit 201 includes a switching element and a freewheeling diode (not shown). By switching the switching element, the DC power supplied from the power supply 100 is converted into AC power and supplied to the load 300 .
- the main conversion circuit 201 is a two-level three-phase full bridge circuit, and has six switching elements and It can consist of six freewheeling diodes in anti-parallel.
- Each switching element of the main conversion circuit 201 is configured by a semiconductor device corresponding to any one of the first to third embodiments described above.
- each upper and lower arm forms each phase (U phase, V phase, W phase) of the full bridge circuit.
- Output terminals of the upper and lower arms, that is, three output terminals of the main conversion circuit 201 are connected to the load 300 .
- the drive circuit 202 generates a drive signal for driving the switching element of the main converter circuit 201 and supplies it to the control electrode of the switching element of the main converter circuit 201 .
- a drive signal for turning on the switching element and a drive signal for turning off the switching element are output to the control electrode of each switching element.
- the driving signal is a voltage signal (ON signal) equal to or higher than the threshold voltage of the switching element, and when maintaining the switching element in the OFF state, the driving signal is a voltage equal to or less than the threshold voltage of the switching element. signal (off signal).
- the control circuit 203 controls the switching elements of the main conversion circuit 201 so that the desired power is supplied to the load 300 . Specifically, based on the power to be supplied to the load 300, the time (on time) during which each switching element of the main conversion circuit 201 should be in the ON state is calculated. For example, the main conversion circuit 201 can be controlled by PWM control that modulates the ON time of the switching element according to the voltage to be output. Then, a control command (control signal) is output to the drive circuit 202 so that an ON signal is output to the switching element that should be in the ON state at each time point, and an OFF signal is output to the switching element that should be in the OFF state. The drive circuit outputs an ON signal or an OFF signal as a drive signal to the control electrode of each switching element according to this control signal.
- each switching element of the main conversion circuit 201 is composed of a semiconductor device corresponding to any one of the first to third embodiments described above. Thereby, reliability and production efficiency can be improved.
- the present invention is not limited to this, and can be applied to various power converters.
- a two-level power conversion device is used, but a three-level or multi-level power conversion device may be used. You can apply it.
- the present invention can be applied to a DC/DC converter or an AC/DC converter.
- the power conversion device to which the present invention is applied is not limited to the case where the above-mentioned load is an electric motor. It can also be used as a device, and can also be used as a power conditioner for a photovoltaic power generation system, an electric storage system, or the like.
- FIG. 15 is a diagram showing a moving body according to Embodiment 5.
- FIG. This moving body 400 is a train or the like, and performs power control using the power converter 200 according to the fourth embodiment. Thereby, reliability and production efficiency can be improved.
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Abstract
Description
図1は、実施の形態1に係る半導体装置を示す断面図である。金属などの放熱板1の上に絶縁基板2が設けられている。絶縁基板2は、セラミックなどの絶縁板3と、絶縁板3の下面の金属パターン4と、絶縁板3の上面の金属パターン5とを有する。金属パターン4は放熱板1にはんだ等で接合されている。半導体チップ6の下面電極が金属パターン5にはんだ等により接合されている。半導体チップ6の上面電極は他の半導体チップ又は電極にワイヤ接続されている。半導体チップ6はSi製のIGBT又はDiodeであるが、SiC-MOSFET又はSiC-SBDでもよい。
図7は、実施の形態2に係る電極の下部を示す斜視図である。電極7は、先端部7aと、先端部7aよりも厚い本体部7bとを有する。先端部7aの上面は本体部7bの上面より低い。先端部7aの下面は本体部7bの下面よりも高い。図8は、実施の形態2に係る電極と金属パターンとの接合部を示す断面図である。はんだフィレット14は、電極7の折り曲げられた部分を全体的に覆っている。半導体装置のその他の構成は実施の形態1と同様である。
図11は、実施の形態3に係る電極と金属パターンとの接合部を示す断面図である。電極7の上面の中央部に円柱状の突起19が設けられている。はんだフィレット14は、電極7の折り曲げられた部分を全体的に覆っている。半導体装置のその他の構成は実施の形態1と同様である。
本実施の形態は、上述した実施の形態1~3にかかる半導体装置を電力変換装置に適用したものである。電力変換装置は、例えば、インバータ装置、コンバータ装置、サーボアンプ、電源ユニットなどである。本発明は特定の電力変換装置に限定されるものではないが、以下、三相のインバータに本発明を適用した場合について説明する。
図15は、実施の形態5に係る移動体を示す図である。この移動体400は電車等であり、実施の形態4に係る電力変換装置200を用いて電力制御を行う。これにより、信頼性と生産効率を向上することができる。
Claims (12)
- 絶縁基板の金属パターンに半導体チップを接合する工程と、
電極の上面に、凹部と、前記凹部から側面に達する溝とを形成する工程と、
前記凹部に第1のはんだを載せる工程と、
前記金属パターンの上面と前記電極の下面の間に第2のはんだを設ける工程と、
前記第1のはんだと前記第2のはんだを溶融させ、溶融した前記第1のはんだを前記溝を介して前記第2のはんだと融合させて、前記金属パターンの前記上面と前記電極の前記下面を接合しつつ前記電極の前記上面を覆うはんだフィレットを形成する工程とを備えることを特徴とする半導体装置の製造方法。 - 絶縁基板の金属パターンに半導体チップを接合する工程と、
電極の先端部を上下からU字状の板はんだで挟む工程と、
加熱した前記金属パターンの上面に前記板はんだの下面を接触させることにより前記板はんだを溶融させて、前記金属パターンの前記上面と前記電極の下面を接合しつつ前記電極の上面を覆うはんだフィレットを形成する工程とを備えることを特徴とする半導体装置の製造方法。 - 前記電極は前記先端部よりも厚い本体部を有し、
前記はんだフィレットは前記本体部の上面も覆うことを特徴とする請求項2に記載の半導体装置の製造方法。 - 前記先端部は鋭角形状であることを特徴とする請求項3に記載の半導体装置の製造方法。
- 絶縁基板の金属パターンに半導体チップを接合する工程と、
上面に突起が設けられた電極と、開口を有する板はんだを準備する工程と、
前記電極の前記上面に前記板はんだを載せ、前記突起を前記開口に挿入する工程と、
前記金属パターンの上面と前記電極の下面の間にはんだを設ける工程と、
前記板はんだと前記はんだを溶融して互いに融合させて、前記金属パターンの前記上面と前記電極の前記下面を接合しつつ前記電極の前記上面を覆うはんだフィレットを形成する工程とを備えることを特徴とする半導体装置の製造方法。 - 金属パターンを有する絶縁基板と、
前記金属パターンに接合された半導体チップと、
上面に設けられた凹部と、前記凹部から側面に達する溝とを有する電極と、
前記金属パターンの上面と前記電極の下面を接合しつつ前記電極の前記上面を覆うはんだフィレットとを備えることを特徴とする半導体装置。 - 金属パターンを有する絶縁基板と、
前記金属パターンに接合された半導体チップと、
先端部と、前記先端部よりも厚い本体部とを有する電極と、
前記金属パターンの上面と前記電極の下面を接合しつつ前記本体部の上面を覆うはんだフィレットとを備えることを特徴とする半導体装置。 - 前記先端部は鋭角形状であることを特徴とする請求項7に記載の半導体装置。
- 金属パターンを有する絶縁基板と、
前記金属パターンに接合された半導体チップと、
上面に突起が設けられた電極と、
前記金属パターンの上面と前記電極の下面を接合しつつ前記電極の前記上面を覆うはんだフィレットとを備えることを特徴とする半導体装置。 - 前記半導体チップはワイドバンドギャップ半導体によって形成されていることを特徴とする請求項6~9の何れか1項に記載の半導体装置。
- 請求項6~10の何れか1項に記載の半導体装置を有し、入力される電力を変換して出力する主変換回路と、
前記半導体装置を駆動する駆動信号を前記半導体装置に出力する駆動回路と、
前記駆動回路を制御する制御信号を前記駆動回路に出力する制御回路とを備えた電力変換装置。 - 請求項11に記載の電力変換装置を用いて電力制御を行うことを特徴とする移動体。
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JP2015142018A (ja) * | 2014-01-29 | 2015-08-03 | 三菱電機株式会社 | 電力用半導体装置 |
JP2018067611A (ja) * | 2016-10-19 | 2018-04-26 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
WO2018146780A1 (ja) * | 2017-02-09 | 2018-08-16 | 三菱電機株式会社 | 半導体装置及び電力変換装置 |
JP2019009328A (ja) * | 2017-06-27 | 2019-01-17 | 三菱電機株式会社 | 電力用半導体装置 |
JP2020113639A (ja) * | 2019-01-11 | 2020-07-27 | 三菱電機株式会社 | パワーモジュールおよびその製造方法、電力変換装置 |
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