WO2022143519A1 - 互通电极结构及其制造方法与应用 - Google Patents

互通电极结构及其制造方法与应用 Download PDF

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WO2022143519A1
WO2022143519A1 PCT/CN2021/141621 CN2021141621W WO2022143519A1 WO 2022143519 A1 WO2022143519 A1 WO 2022143519A1 CN 2021141621 W CN2021141621 W CN 2021141621W WO 2022143519 A1 WO2022143519 A1 WO 2022143519A1
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Prior art keywords
conductive layer
hole
conductive
insulating substrate
conductor
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PCT/CN2021/141621
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English (en)
French (fr)
Inventor
林剑
张�浩
王敬
王振国
骆群
龚超
马昌期
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中国科学院苏州纳米技术与纳米仿生研究所
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Priority to EP21914255.1A priority Critical patent/EP4270459A4/en
Priority to JP2023523069A priority patent/JP2023546128A/ja
Priority to US18/265,265 priority patent/US20240047589A1/en
Publication of WO2022143519A1 publication Critical patent/WO2022143519A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H10K30/83—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes

Definitions

  • the present application relates to an electrode, in particular to an interconnected electrode structure, a manufacturing method and application thereof.
  • This kind of electrode usually needs to have good optical transparency, conductivity and patterning accuracy. It can transmit light in a specified wavelength band while working normally as an electrode. Therefore, it is one of the important components of display, lighting and solar cells. It can also be used for Special transparent heating film or shielding layer.
  • transparent conductive materials such as metal oxides, metals, pedot:pss, carbon materials, etc.
  • transparent insulating materials such as glass, polymer PET, transparent polyimide, etc.
  • a transparent conductive material with a thickness of nanometers is deposited on a transparent insulating material with a thickness of 0.03-0.2 mm to ensure that the product can meet the overall mechanical strength and insulating properties required for production and use.
  • the transparent insulating material can also act as a transparent dielectric layer in the capacitive touch screen, further simplifying the production process of the product.
  • An object of the present application is to provide an interconnected electrode structure, thereby overcoming the deficiencies of the prior art.
  • Another object of the present application is to provide a method for manufacturing an interconnected electrode structure and its application.
  • the insulating base material has a first side and a second side opposite to each other;
  • the first electrical conductor is formed of a conductive paste that enters the through hole from the opening of the through hole on the first surface, and the bottom end of the first electrical conductor reaches the through hole Any set position between the two ends of ;
  • a second electrical conductor is formed of a second conductive material that enters the through hole from the opening of the through hole on the second face, and the second electrical conductor is also connected to the first electrical conductor Electrically bonded to form conductive channels within the insulating substrate.
  • a second conductive layer is further formed on the second surface of the insulating base, and the second conductive layer is formed integrally with the second conductor.
  • a third conductive layer is further provided on the second surface of the insulating base, and the third conductive layer is in electrical contact with the second conductive layer.
  • the third conductive layer is a transparent conductive layer.
  • the second conductive layer is distributed on at least one side of the third conductive layer.
  • the second conductive layer is disposed around the third conductive layer in a semi-surrounding form, or the second conductive layer is disposed around the third conductive layer.
  • the second conductive layer at least partially overlaps the third conductive layer.
  • the second conductive layer is in the shape of a line, and the line width is less than or equal to 5 mm.
  • the equivalent sheet resistance of the second conductive layer is less than or equal to 5 ⁇ /sq.
  • the thickness of the second conductive layer is greater than the protrusion height of the edge of the opening of the through hole on the second surface of the insulating substrate relative to the second surface.
  • the second conductive layer covers the opening of the through hole on the second surface of the insulating substrate and extends radially outward from the edge of the opening by more than 20 ⁇ m.
  • the highest point of the second conductive layer is ⁇ 5 ⁇ m in height compared to the protrusion height of the third conductive layer.
  • the opening area of the through hole on the first surface or the second surface of the insulating substrate is less than 0.13 mm 2 .
  • the opening perimeter of the through hole on the first side or the second side of the insulating substrate is 10-800 ⁇ m.
  • the protrusion height of the edge of the opening of the through hole on the first surface or the second surface of the insulating substrate relative to the first surface or the second surface is less than 5 ⁇ m.
  • a conductive structure formed of a conductive paste is disposed on the first surface of the transparent insulating substrate, and the conductive structure is integrally formed with the first conductor.
  • the insulating substrate includes a transparent insulating film.
  • the insulating substrate has a thickness of 1-300 ⁇ m.
  • Some embodiments of the present application provide a method for manufacturing an interconnected electrode structure, which includes:
  • a through hole is processed in a selected area of the insulating base material, and the through hole penetrates the insulating base material along the thickness direction;
  • a conductive paste containing a first conductive material is applied on the first surface of the insulating substrate, and part of the conductive paste enters the through hole and reaches a set position, and the selected position is located on the side of the through hole between the two ends;
  • a second conductive layer is formed on the second surface of the insulating substrate opposite to the first surface with a second conductive material, and part of the second conductive material enters the through hole to form a second conductor, and the second conductive layer is formed.
  • the conductor is electrically combined with the first conductor in the through hole, and the first conductor is formed by the conductive paste entering the through hole, thereby forming a conductive channel in the insulating substrate.
  • the manufacturing method further includes: forming a third conductive layer on the second surface of the insulating substrate, the third conductive layer is a transparent conductive layer, and making the third conductive layer and the The second conductive layer is in electrical contact.
  • Some embodiments of the present application also provide an interconnecting electrode structure fabricated by any of the foregoing methods.
  • Some embodiments of the present application also provide uses of the interconnected electrode structure.
  • the provided manufacturing method of the interconnected electrode structure is simple and easy to operate, effectively simplifies the design and manufacturing process of the front and back sides of the transparent electrode conducting wiring, can significantly reduce the cost, and avoid “manufacturing the device first and then penetrating the insulating layer”
  • the mode brings problems such as difficult process and low yield rate.
  • interconnected electrodes formed by fabrication are simple in structure, good in electrical conductivity and high in yield, and have broad application prospects in optoelectronic devices such as OLEDs, photovoltaic cells, and photodetectors.
  • FIG. 1a is a schematic diagram of an interconnected electrode structure in Embodiment 1 of the present application.
  • FIG. 1b is a schematic diagram of a manufacturing process of an interconnected electrode structure in Embodiment 1 of the present application;
  • FIG. 2 is a schematic diagram of a manufacturing process of an interconnected electrode structure in Embodiment 2 of the present application;
  • Example 3 is a cross-sectional view of a thin film solar cell in Example 6 of the present application.
  • FIG. 4 is a bottom view of a thin film solar cell in Example 6 of the present application.
  • a through hole is processed in a selected area of the insulating base material, and the through hole penetrates the insulating base material along the thickness direction;
  • a conductive paste containing a first conductive material is applied on the first surface of the insulating substrate, and part of the conductive paste enters the through hole and reaches a set position, and the selected position is located on the side of the through hole between the two ends;
  • a second conductive layer is formed on the second surface of the insulating substrate opposite to the first surface with a second conductive material, and part of the second conductive material enters the through hole to form a second conductor, and the second conductive layer is formed.
  • the conductor is electrically combined with the first conductor in the through hole, and the first conductor is formed by the conductive paste entering the through hole, thereby forming a conductive channel in the insulating substrate.
  • the method of processing the through hole on the insulating substrate can be known, for example, it can be a mechanical processing method, a laser ablation method or other physical and chemical methods. Wherein, if mechanical processing or laser ablation is adopted, in many cases, an annular protrusion may be formed on the edge of the processed through hole.
  • the shape and size of the through hole can be arbitrarily selected according to actual requirements, for example, it can be a circle, a polygon or other irregular shapes.
  • the area of the opening of the through hole on the first surface or the second surface of the insulating substrate is 0.13 mm 2 or less, preferably 0.03 mm 2 or less.
  • the perimeter of the opening of the through hole on the first side or the second side of the insulating substrate is 10-800 ⁇ m, preferably 60-400 ⁇ m.
  • the protrusion height of the edge of the opening of the through hole on the first surface or the second surface of the insulating substrate relative to the first surface or the second surface is less than 5 ⁇ m, preferably less than 1 ⁇ m.
  • the manufacturing method further includes: forming a third conductive layer on the second surface of the insulating substrate, where the third conductive layer is a transparent conductive layer.
  • the manufacturing method includes: firstly forming the conductive channel in the insulating substrate, and then forming a third conductive layer on the second surface of the insulating substrate, And the third conductive layer is in electrical contact with the second conductive layer.
  • the manufacturing method includes: firstly forming a third conductive layer on the second surface of the insulating base material, and then processing a conductive layer on a selected area of the insulating base material Holes are formed, and then the conductive channel is formed in the insulating base material, and the second conductive layer and the third conductive layer are in electrical contact.
  • the manufacturing method includes: after part of the conductive paste enters the through hole and reaches the selected position and after the deposition of the transparent conductive layer is completed, on the side of the transparent conductive layer A conductive layer is deposited around the via openings (ie, the second side of the insulating substrate).
  • the second conductive layer by disposing the second conductive layer, not only the contact effect between the transparent conductive layer and the conductive paste used to form the conductive channel can be improved, but also the conductivity of the transparent conductive layer can be improved.
  • the conductive paste enters the through holes spontaneously due to gravity, etc., but due to surface tension and adhesion
  • the effect of the consistency and the timely volatilization of the solvent rapidly reduce the fluidity, thereby ensuring that the conductive paste will not flow out of the lower surface of the through hole (ie, the second surface of the insulating substrate) due to gravity.
  • the material of the transparent conductive layer includes any one or more of metal oxides (such as ITO, AZO, FTO, etc.), metals (such as metal grids, metal nanowire networks), conductive polymers, and carbon materials. combination of species, but not limited thereto.
  • the insulating substrate includes a transparent insulating film
  • the material of the transparent insulating film includes any one of glass, polyester (PET), polyurethane (PU), and polyimide (PI). one or more combinations, but not limited thereto.
  • the thickness of the insulating substrate is 1-300 ⁇ m, preferably 15-150 ⁇ m.
  • the through holes are one or more.
  • the through hole vertically penetrates the insulating substrate along the thickness direction.
  • the conductive paste generally refers to a conductive material that has fluidity and can be transformed into a solid under certain circumstances, and the transformation conditions may be heating, natural drying, or light irradiation.
  • the conductive paste includes but is not limited to silver paste, for example, it can also be various types of conductive inks known in the art. Under certain circumstances (such as heating, natural drying or light irradiation), some of the volatile components (solvents, diluents, etc.) in these conductive pastes will be volatilized and removed, or a rapid cross-linking reaction will occur due to light irradiation. Thereby, the conductive paste is transformed into a conductive solid.
  • the conductive paste can also be a conductive paste or a conductive paste diluted with a solvent or a reactive diluent.
  • the viscosity of the conductive paste is 20-100,000 cP, preferably 100-10,000 cP.
  • the surface tension of the main solvent components in the conductive paste is 15-72 dyn/cm, preferably 27-50 dyn/cm.
  • the surface tension of the conductive paste is preferably 15-72 dyn/cm, particularly preferably 27-50 dyn/cm.
  • the manner of applying the conductive paste on the first side of the insulating substrate includes any one or a combination of printing, coating or dispensing, but is not limited thereto.
  • the method of forming the second conductive layer on the second surface of the insulating substrate with the second conductive material includes physical and/or chemical deposition methods, such as printing, coating, dispensing, vacuum evaporation or magnetic deposition. A combination of any one or more of the controlled sputtering methods, but not limited thereto.
  • the manufacturing method specifically includes: using at least any one of inkjet printing, air jet printing, gravure printing, screen printing, flexo printing, and mask spraying to manufacture and form the first Two conductive layers.
  • the thickness of the second conductive layer is greater than the protrusion height of the edge of the opening of the through hole on the second surface of the insulating substrate relative to the second surface.
  • the second conductive layer covers the opening of the through hole on the second surface of the insulating substrate and extends radially outward from the edge of the opening by more than 20 ⁇ m, preferably more than 50 ⁇ m.
  • the shape of the second conductive layer is not particularly limited, and can be arbitrarily adjusted according to actual needs.
  • the material of the second conductive layer includes various metal or non-metal materials with good electrical conductivity, such as Au, Ag, and Cu.
  • the second conductive layer is distributed on at least one side of the third conductive layer.
  • the second conductive layer is disposed around the third conductive layer in a semi-surrounding form.
  • the second conductive layer is disposed around the third conductive layer.
  • the second conductive layer is in the shape of a line, and the line width is less than or equal to 5 mm, preferably less than or equal to 1 mm.
  • the highest point of the second conductive layer is ⁇ 5 ⁇ m, preferably ⁇ 1 ⁇ m, compared to the protrusion height of the third conductive layer.
  • the second conductive layer at least partially overlaps the third conductive layer.
  • the through hole can be made to continuously penetrate the insulating base material and the third conductive layer pre-arranged on the second surface of the insulating base material, and the second conductive layer can be at least partially stacked on the third conductive layer.
  • the second conductive layer may be formed on the second surface of the insulating substrate first, and then the third conductive layer may be formed on the second surface of the insulating substrate, and the third conductive layer may be at least partially stacked on the second conductive layer.
  • the equivalent sheet resistance of the second conductive layer is ⁇ 5 ⁇ /sq, preferably ⁇ 1 ⁇ /sq.
  • the "short-circuit effect" unique to the circuit itself can be used, without changing the conductivity of the transparent electrode itself.
  • the process is simple, low-cost, widely adaptable, and conducive to subsequent solar cell module assembly craft.
  • Some embodiments of the present application also provide interconnected electrode structures fabricated by any of the aforementioned methods.
  • the interconnected electrode structure includes a conductive channel formed in the transparent insulating substrate, the conductive channel includes a through hole penetrating the transparent insulating substrate along the thickness direction, and the first conductive channel is formed in the transparent insulating substrate from the through hole.
  • the first conductor is formed by the conductive paste with the opening of the surface entering the through hole
  • the second conductor is formed by the conductive material entering the through hole from the opening of the through hole on the second surface of the transparent insulating substrate.
  • the conductor is electrically combined with the second conductor, the second surface of the transparent insulating substrate is further provided with a third conductive layer and a second conductive layer formed of a conductive material, and the second conductive layer is integrated with the second conductor forming, the third conductive layer is in electrical contact with the second conductive layer.
  • the third conductive layer is a transparent conductive layer.
  • the first surface of the transparent insulating substrate is further provided with a conductive structure formed of conductive paste, and the conductive structure is integrally formed with the first conductor.
  • Some embodiments of the present application also provide uses of the interconnected electrode structure, such as in the fabrication of various optoelectronic devices.
  • a device includes a functional module and an electrode module matched with the functional module, and the electrode module includes the interconnected electrode structure.
  • the device may be an electronic or mechanical device including optoelectronic elements, light-emitting elements, and electronic elements.
  • the functional modules therein may include LEDs, OLEDs, thin film photovoltaic cells, lasers, etc., and are not limited thereto.
  • Embodiment 1 An interconnecting electrode structure provided in this embodiment is shown in FIG. 1a, which includes a polyimide (PI) film 10 and a through hole 103 penetrating the PI film 10 in the thickness direction.
  • a first conductor 20' and a second conductor 40' are distributed in the through hole 103, and the first conductor 20' and the second conductor 40' are electrically combined to form a conductive channel in the PI film 10.
  • the first conductor 20 ′ is formed by curing the conductive silver paste 20 entering the through hole 103 from the opening of the through hole 103 on the front side (first side 101 ) of the PI film.
  • the second conductor 40 ′ is formed by the opening of the through hole 103 on the back side (second side 102 ) of the PI film and the Au entering the through hole 103 .
  • the front side of the PI film can also form a first conductive layer with the remaining conductive silver paste 20, and the back side of the PI film can also be provided with an Au layer as the second conductive layer, and the Au layer can be integrated with the second conductor 40' form.
  • the backside of the PI film can also be provided with a transparent conductive layer 30 as a third conductive layer, and the transparent conductive layer 30 is in electrical contact with the Au layer.
  • FIG. 1b A method for manufacturing the interconnected electrode structure is shown in Figure 1b, which includes the following steps:
  • a plurality of through holes 103 are processed on the PI film 10 with a thickness of about 300 ⁇ m, and each through hole vertically penetrates the PI film, and each through hole can be a circle, a polygon or other irregular shapes.
  • the perimeter range of a single through hole is about 10-50 ⁇ m, the opening area on the front side (first side 101 ) or the opening area on the back side (second side 102 ) of the PI film is less than 0.03 mm 2 , and each through hole is at The protrusion heights of the edges of the openings on the front and back of the PI film are both less than 1 ⁇ m;
  • the Au layer 40 is deposited by magnetron sputtering in the area where the aforementioned through holes are distributed on the back of the PI film.
  • the Au layer 40 is in electrical contact with the transparent conductive layer 30.
  • the thickness of the Au layer is higher than that of the through holes in the PI film.
  • the protrusion height of the opening edge on the back side, the Au layer deposition area covers and exceeds the opening edge of each through hole on the back side of the PET film by more than 20 ⁇ m, and there is no shape restriction, wherein the local area of the Au layer also enters each through hole to form the second conductor 40 ', and the second conductor is electrically combined with the first conductor to form a conductive channel 50 penetrating the PI film, thereby obtaining an interconnected electrode structure, and it can also be considered that a transparent electrode with reserved through-circuit is obtained.
  • OLEDs organic light-emitting devices
  • the OLED circuit assembly can have more options in practical applications, and it is even possible to achieve a narrower bezel, making it suitable for bending Folding screen electrodes and other products, but not limited to this.
  • Embodiment 2 A method for manufacturing an interconnected electrode structure, as shown in FIG. 2 , includes the following steps:
  • the ITO transparent conductive layer 80 is formed on the back of the polyester (PET) film 60 with a thickness of about 150 ⁇ m;
  • a plurality of through holes 603 are processed on the polyester (PET) film, and each through hole penetrates the PET film vertically, and each through hole can be a circle, a polygon, or other irregular shapes.
  • the perimeter range of a single through hole is about 500-800 ⁇ m, the opening area on the front side (first side 601 ) or the opening area on the back side (second side 602 ) of the PET film is less than 0.13 mm 2 , and each through hole is in The protrusion heights of the edges of the openings on the front and back of the PET film are both less than 5 ⁇ m;
  • Ag layer 90 is deposited by magnetron sputtering in the area where the aforementioned through holes are distributed on the back of the PET film.
  • the Ag layer 90 is in electrical contact with the ITO transparent conductive layer 80, and the thickness of the Ag layer is higher than that of each through hole in the PET film.
  • the protrusion height of the opening edge on the back of the film, the Ag layer deposition area covers and exceeds the opening edge of each through hole on the back of the PET film by more than 50 ⁇ m, and there is no shape restriction, where the local area of the Ag layer also enters each through hole to form a second conductor 90', and the second conductor is electrically combined with the first conductor to form a conductive channel penetrating the PET film, thereby obtaining an interconnected electrode structure, and it can also be considered that a transparent electrode with reserved through-circuit is obtained.
  • the side of the thin film with an ITO layer can be used as an electrode of a thin film solar cell. Since the electrode can be connected with an external circuit on the other side of the PET film through the conductive interconnected electrode structure, it has more significant convenience in application.
  • Embodiment 3 A method of manufacturing an interconnected electrode structure, comprising the steps of:
  • each through hole vertically penetrates the PU film, and each through hole can be circular, polygonal or other irregular shapes.
  • the perimeter range of a single through hole is about 60-100 ⁇ m, the opening area on the front (first side) of the PU film or the opening area on the back (second side) is less than 0.03mm 2 , and each through hole is in the PU film.
  • the protrusion heights of the edges of the openings on the front and back are both less than 1 ⁇ m;
  • the Cu layer is deposited by magnetron sputtering in the area where the aforementioned through holes are distributed on the back of the PU film.
  • the Cu layer is in electrical contact with the transparent conductive layer, and the thickness of the Cu layer is higher than the opening of each through hole on the back of the PU film.
  • the protrusion height of the edge, the Cu layer deposition area covers and exceeds the opening edge of each through hole on the back of the PU film by more than 20 ⁇ m, and there is no shape restriction, wherein the local area of the Cu layer also enters each through hole to form a second conductor, and make the first conductor.
  • the second conductor is electrically combined with the first conductor to form a conductive channel running through the PU film, thereby obtaining an interconnected electrode structure, and it can also be considered that a light-transmitting electrode with reserved through-circuit is obtained.
  • a display screen can be manufactured on the side of the PU film with the carbon nanotube film by etching the circuit first and then binding the Mini LED chip.
  • the Cu layer can realize the back application of voltage by reserving the through circuit, a borderless display circuit can be realized under certain conditions.
  • Embodiment 4 A method of manufacturing an interconnected electrode structure, comprising the steps of:
  • each through hole vertically penetrates the glass, and each through hole can be a circle, a polygon or other irregular shapes.
  • the perimeter range of a single through hole is about 300-400 ⁇ m, the opening area on the front side of the glass (the first side) or the opening area on the back side (the second side) is less than 0.03mm 2 , and each through hole is on the front side of the glass,
  • the protrusion heights of the edges of the openings on the back are all less than 1 ⁇ m;
  • the Cu layer is deposited by magnetron sputtering on the area where the aforementioned through holes are distributed on the back of the glass.
  • the Cu layer is in electrical contact with the transparent conductive layer, and the thickness of the Cu layer is higher than the thickness of the opening edge of each through hole on the back of the glass.
  • the Cu layer deposition area covers and exceeds the opening edge of each through hole on the back of the glass by more than 50 ⁇ m, and there is no shape restriction, wherein the local area of the Cu layer also enters each through hole to form a second conductor, and the second conductor is It is electrically combined with the first conductor to form a conductive channel through the glass, thereby obtaining an interconnected electrode structure, and it can also be considered that a transparent electrode with reserved through-circuit is obtained.
  • the main structure of the OLED can be arranged on the side of the glass with the transparent conductive layer.
  • Embodiment 5 A method of manufacturing an interconnected electrode structure, comprising the steps of:
  • each through hole vertically penetrates the PU film, and each through hole can be circular, polygonal or other irregular shapes.
  • the perimeter range of a single through hole is about 200-250 ⁇ m, the opening area on the front side (first side) of the PU film or the opening area on the back side (second side) is less than 0.03mm 2 , and each through hole is in the PU film.
  • the protrusion heights of the edges of the openings on the front and back are both less than 1 ⁇ m;
  • the Cu layer is deposited by magnetron sputtering in the area where the aforementioned through holes are distributed on the back of the PU film.
  • the Cu layer is in electrical contact with the transparent conductive layer, and the thickness of the Cu layer is higher than the opening of each through hole on the back of the PU film.
  • the protrusion height of the edge, the Cu layer deposition area covers and exceeds the opening edge of each through hole on the back of the PU film by more than 50 ⁇ m, and there is no shape restriction, wherein the local area of the Cu layer also enters each through hole to form a second conductor, and make the first conductor.
  • the second conductor is electrically combined with the first conductor to form a conductive channel through the PU film, thereby obtaining an interconnected electrode structure, and it can also be considered that a transparent electrode with reserved through-circuit is obtained.
  • the main structure of the ultraviolet light detector can be arranged on the side of the PU film with the transparent conductive layer.
  • Embodiment 6 A preparation method of a thin film solar cell, which comprises the following steps:
  • Example 2 is substantially the same as Example 2;
  • the formed Ag layer 4 is arranged around the transparent conductive layer 21 and is in electrical contact with the transparent conductive layer 21;
  • an electron transport layer 22 such as a zinc oxide thin film layer with a thickness of about 50 nm
  • an active layer 23 such as a PM6:Y6 active layer with a thickness of about 100 nm
  • a hole transport layer 24 such as MoO3 thin film, with a thickness of about 10 nm
  • a metal top electrode 25 such as metal Al, with a thickness of about 100 nm
  • the thin-film solar cell 2 can be used as a basic structural unit of a battery module, and can be conveniently connected with other battery units through the silver paste 3 .
  • the overall performance of the product can be effectively improved without changing the conductivity of the transparent electrode itself.
  • the solution shown in FIG. 4 is especially suitable for use in devices with larger-sized transparent electrodes ( ⁇ 10 mm, preferably ⁇ 50 mm).
  • the Ag layer 4 can be set in the form of conductive lines, and its width can be set to be ⁇ 5mm, preferably ⁇ 1mm, and the equivalent sheet resistance of the lines is ⁇ 5 ⁇ /sq, preferably ⁇ 1 ⁇ /sq.
  • the protrusion height of the highest point of the Ag layer 4 is less than 5 micrometers, preferably less than 1 micrometer.
  • the Ag layer 4 can also be formed by other methods known in the art, such as ink jet printing, air jet printing, gravure printing, screen printing, flexographic printing, mask spraying, and the like.
  • the most prominent advantage of the product of the present application and the reference product is the convenience of later assembly, and the circuit can be directly connected to the back of the battery, and there is no need to think about connecting the electrodes on the front of the battery. Via steps.
  • the actual equivalent sheet resistance of the transparent electrode is significantly reduced, which can usually improve the efficiency of the solar cell by more than 5%.
  • the above embodiments of the present application actually provide a transparent electrode manufacturing method with reserved through-circuit Reasonable process window. Specifically, it is to make full use of the flow resistance inside the fluid-like conductive material (conductive paste) and the interaction force between it and the through-hole wall to offset the gravitational effect of the conductive material itself, so as to achieve a delicate balance.
  • the expected process goal can be achieved.
  • the method has the advantages of simple process and low manufacturing cost, the obtained transparent electrode has good conductivity and high yield, and can effectively avoid the difficult process and low yield caused by the mode of "manufacturing the device first and then penetrating the insulating layer". question.

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Abstract

本申请公开了一种互通电极结构及其制造方法与应用。所述互通电极结构包括绝缘基材、通孔、第一导电体和第二导电体。所述绝缘基材具有相背对的第一面和第二面，所述通孔沿厚度方向贯穿绝缘基材，所述第一导电体由从所述通孔在所述第一面的开口进入所述通孔的导电浆料形成，所述第二导电体由从所述通孔在所述第二面的开口进入所述通孔的第二导电材料形成，所述第二导电体与第一导电体电性结合，从而在所述绝缘基材内形成导电通道。本申请提供的互通电极结构简单、导电性能良好、良品率高，且制作工艺简单、成本低。

Description

互通电极结构及其制造方法与应用 技术领域
本申请涉及一种电极，具体涉及一种互通电极结构、其制造方法与应用。
背景技术
随着新型薄膜发光、光伏、传感等器件的发展，高透明度电极的应用范围也逐渐扩大。这种电极通常需要具有良好的光学透明度、导电性和图形化精度，可以在作为电极正常工作的同时透过指定波段的光，因此是显示、照明、太阳能电池的重要部件之一，也可用于特种的透明加热膜或屏蔽层。
由于透明导电材料(如金属氧化物、金属、pedot:pss、碳材料等)的成本远高于透明绝缘材料(如玻璃、聚合物PET、透明聚酰亚胺等)，目前透明电极产品通常是在厚度为0.03-0.2毫米的透明绝缘材料上沉积纳米级别厚度的透明导电材料，以此来保证产品能够满足生产和使用所需的整体机械强度和绝缘性能。此外，透明绝缘材料还能够在电容式触控屏中充当透明介电层，进一步简化产品的生产工艺。
然而，这类透明电极产品在应用过程中也存在一些工艺上的不兼容之处，其中的关键瓶颈之一在于，前述的透明绝缘层在特定情况下反而会增加器件走线的复杂程度。例如，当有机发光二极管(OLED)或薄膜光伏电池的电极连接端口需要设计在器件背面时，如何用最低的成本实现走线对绝缘层的穿越就成为一个关键的工艺设计问题。此外，由于制备好的薄膜器件容易遭到破坏，在透明电极制造过程中提前预留好贯穿绝缘层的导电线路可以有效降低整体工艺难度。但迄今为止，业界尚没有提出有效的解决方案。虽然理论上可以用导电浆料填充通孔的方法来实现贯穿绝缘层的导电线路，但在实际操作中，如果仅仅用少量液态的导电材料对该通孔进行，并不能保证带有流动性的液体能稳定停留在通孔内部直至干燥成型，反而很容易从通孔的下方流出，进而造成导电通道的断开，以及制造设备的污染。而整体浸泡则会直接污染透明导电表面，可行性更低。
发明内容
本申请的一个目的在于提供一种互通电极结构，从而克服现有技术的不足。
本申请的另一个目的地在于提供一种互通电极结构的制造方法与其应用。
为实现前述发明目的，本申请采用的技术方案包括：
本申请的一些实施例提供了一种互通电极结构，其包括：
绝缘基材，所述绝缘基材具有相背对的第一面和第二面；
通孔，所述通孔沿厚度方向贯穿所述绝缘基材；
第一导电体，所述第一导电体由从所述通孔在所述第一面的开口进入所述通孔的导电浆料形成，所述第一导电体的底端到达所述通孔的两端之间的任一设定位置；
第二导电体，所述第二导电体由从所述通孔在所述第二面的开口进入所述通孔的第二导电材料形成，并且所述第二导电体还与第一导电体电性结合，从而在所述绝缘基材内形成导电通道。
在一些实施方式中，所述绝缘基的第二面还形成第二导电层，所述第二导电层与第二导电体一体形成。
在一些实施方式中，所述绝缘基的第二面还设有第三导电层，并且所述第三导电层与第二导电层电性接触。
在一些实施方式中，所述第三导电层为透明导电层。
在一些实施方式中，所述第二导电层至少分布在第三导电层一侧。
在一些实施方式中，所述第二导电层以半包围的形式设置在第三导电层周围，或者，所述第二导电层围绕第三导电层设置。
在一些实施方式中，所述第二导电层与第三导电层至少部分交叠。
在一些实施方式中，所述第二导电层为线条状，且线条宽度≤5mm。
在一些实施方式中，所述第二导电层的等效方块电阻≤5Ω/sq。
在一些实施方式中，所述第二导电层的厚度大于所述通孔于绝缘基材第二面的开口的边缘部相对于所述第二面的突起高度。
在一些实施方式中，所述第二导电层覆盖所述通孔于绝缘基材第二面的开口并自所述开口的边缘部沿径向向外延伸20μm以上。
在一些实施方式中，所述第二导电层的最高点相比于第三导电层的突起高度<5μm。
在一些实施方式中，所述通孔于绝缘基材第一面或第二面的开口面积在0.13mm 2以下。
在一些实施方式中，所述通孔于绝缘基材第一面或第二面的开口周长为10-800μm。
在一些实施方式中，所述通孔于绝缘基材第一面或第二面的开口的边缘部相对于所述 第一面或第二面的突起高度小于5μm。
在一些实施方式中，所述透明绝缘基材第一面设置有由导电浆料形成的导电结构，所述导电结构与所述第一导电体一体形成。
在一些实施方式中，所述绝缘基材包括透明绝缘薄膜。
在一些实施方式中，所述绝缘基材的厚度为1-300μm。
本申请的一些实施例提供了一种互通电极结构的制造方法，其包括：
在绝缘基材的选定区域加工出通孔，所述通孔沿厚度方向贯穿所述绝缘基材；
在所述绝缘基材的第一面施加包含第一导电材料的导电浆料，并使部分的导电浆料进入所述通孔且到达设定位置，所述选定位置位于所述通孔的两端之间；
以第二导电材料在所述绝缘基材相背于第一面的第二面形成第二导电层，并使部分的第二导电材料进入所述通孔形成第二导电体，所述第二导电体与所述通孔内的第一导电体电性结合，所述第一导电体由进入所述通孔的所述导电浆料形成，从而在所述绝缘基材内形成导电通道。
在一些实施方式中，所述的制造方法还包括：在所述绝缘基材的第二面形成第三导电层，所述第三导电层为透明导电层，且使所述第三导电层与第二导电层电性接触。
本申请的一些实施例还提供了由前述任一种方法制作形成的互通电极结构。
本申请的一些实施例还提供了所述互通电极结构的用途。
与现有技术相比较，本申请实施例所提供技术方案的有益效果至少在于：
(1)提供的一种互通电极结构的制造方法简单易操作，有效简化了透明电极正反面导通的走线设计和制造工艺，可以显著降低成本，避免“先制造器件、后贯穿绝缘层”模式所带来的工艺难度大、良品率低等问题。
(2)制作形成的互通电极结构简单、导电性能良好、良品率高，在OLED、光伏电池、光电探测器等光电器件中有广泛的应用前景。
附图说明
图1a是本申请实施例1中一种互通电极结构的示意图；
图1b是本申请实施例1中一种互通电极结构的制造工艺示意图；
图2是本申请实施例2中一种互通电极结构的制造工艺示意图；
图3是本申请实施例6中一种薄膜太阳能电池的剖视图；
图4是本申请实施例6中一种薄膜太阳能电池的仰视图。
具体实施方式
以下将结合具体实施方式更详细的说明本申请的技术方案。需要说明的是，除非另外具体陈述，否则本说明书中的术语“包含(include、includes、including)”、“具有(have、has或having)”的使用通常应理解为开放式的且不具限制性。并且，应理解，各步骤的次序或执行特定动作的次序并非十分重要，只要本申请教示保持可操作即可。此外，可同时进行两个或两个以上步骤或动作。
本申请的一些实施例提供的一种互通电极结构的制造方法包括：
在绝缘基材的选定区域加工出通孔，所述通孔沿厚度方向贯穿所述绝缘基材；
在所述绝缘基材的第一面施加包含第一导电材料的导电浆料，并使部分的导电浆料进入所述通孔且到达设定位置，所述选定位置位于所述通孔的两端之间；
以第二导电材料在所述绝缘基材相背于第一面的第二面形成第二导电层，并使部分的第二导电材料进入所述通孔形成第二导电体，所述第二导电体与所述通孔内的第一导电体电性结合，所述第一导电体由进入所述通孔的所述导电浆料形成，从而在所述绝缘基材内形成导电通道。
在本申请的以上实施例中，通过在绝缘基材上加工出一个或多个通孔，并通过调控导电浆料的粘度等性质，使其在被施加到绝缘基材第一面后，能够在重力(也可以是其它外力)等作用下自行进入所述通孔但不从所述通孔中漏出，一方面可以在后续过程形成导电体，并与进入所述通孔的第二导电材料配合形成贯穿绝缘基材的导电通道，另一方面还可以避免导电浆料从所述通孔露出而污染绝缘基材第二面的问题，工艺简单、可控性好、成本低，且有利于提升器件良率和保障器件性能。
进一步的，在所述绝缘基材上加工出通孔的方式可以是已知的，例如可以是机械加工方式、激光烧蚀方式或者其它物理、化学方式。其中，若采用机械加工或激光烧蚀方式，则在较多情况下，可能会使加工出的通孔边缘形成环形突起。
进一步的，所述通孔的形状、尺寸可以依据实际需求而任意选择，例如可以是圆形、多边形或其它不规则形状。
在一些实施方式中，所述通孔于绝缘基材第一面或第二面的开口的面积在0.13mm 2以下，优选在0.03mm 2以下。
在一些实施方式中，所述通孔于绝缘基材第一面或第二面的开口的周长为10-800μm，优选为60-400μm。
在一些实施方式中，所述通孔于绝缘基材第一面或第二面的开口的边缘部相对于所述第一面或第二面的突起高度小于5μm，优选小于1μm。
在一些实施方式中，所述的制造方法还包括：在所述绝缘基材的第二面形成第三导电层，所述第三导电层为透明导电层。
进一步的，在一些较为具体的实施方式中，所述的制造方法包括：先在所述绝缘基材内形成所述导电通道，之后在所述绝缘基材的第二面形成第三导电层，且使所述第三导电层与第二导电层电性接触。
进一步的，在一些较为具体的实施方式中，所述的制造方法包括：先在所述绝缘基材的第二面形成第三导电层，再在所述绝缘基材的选定区域加工出通孔，之后在所述绝缘基材内形成所述导电通道，且使所述第二导电层与第三导电层电性接触。
进一步的，在一些较为具体的实施方式中，所述的制造方法包括：在部分的导电浆料进入所述通孔并到达选定位置以及在透明导电层沉积完成之后，在透明导电层一侧(即绝缘基材的第二面)的通孔开口周围沉积导电层。
在这些实施方式中，通过设置第二导电层，不仅可以改善透明导电层与用以形成所述导电通道的导电浆料之间的接触效果，而且还有利于协助改善透明导电层的导电性。
在这些实施方式中，通过在绝缘基材的第一面的有孔区域印刷、涂布或点胶导电浆料，使导电浆料因为重力作用等自发进入通孔中，但由于表面张力和粘稠度的作用，以及溶剂的及时挥发而迅速降低流动性，从而保证导电浆料不会因为重力而流出通孔的下表面(即绝缘基材的第二面)。
进一步的，所述透明导电层的材质包括金属氧化物(如ITO、AZO、FTO等)、金属(如金属网栅、金属纳米线网络)、导电聚合物、碳材料中的任意一种或多种的组合，且不限于此。
在一些实施方式中，所述绝缘基材包括透明绝缘薄膜，例如，所述透明绝缘薄膜的材质包括玻璃、聚酯(PET)、聚氨酯(PU)、聚酰亚胺(PI)中的任意一种或多种的组合，且不限于此。
在一些实施方式中，所述绝缘基材的厚度为1-300μm，优选为15-150μm。
在一些实施方式中，所述通孔为一个或多个。
在一些实施方式中，所述通孔沿厚度方向垂直贯穿绝缘基材。
在一些实施方式中，所述导电浆料是泛指具有流动性、且在一定情况下可转变为固体的导电性材料，其转变条件可以是加热、自然干燥或光照射等。进一步的，所述导电浆料包括 但不限于银浆，例如还可以是本领域已知的各类导电墨水等。这些导电浆料在一定的情况下(如加热、自然干燥或光照射)，其中的部分挥发性组分(溶剂、稀释剂等)会被挥发去除，或者因为光照射而发生快速交联反应，从而使导电浆料被转变为导电的固体。或者，这些导电浆料中部分的组分可能会与环境中的物质或者导电浆料中的其它组分反应，从而使导电浆料被转变为导电的固体。在一些情况下，所述导电浆料也可以采用导电胶或经溶剂或者活性稀释剂稀释后的导电胶。
在一些实施方式中，所述导电浆料的粘度为20-100000cP，优选为100-10000cP。
在一些实施方式中，所述导电浆料中主要溶剂成分的表面张力为15-72dyn/cm，优选为27-50dyn/cm。
亦可以认为，所述导电浆料的表面张力优选为15-72dyn/cm，尤其优选为27-50dyn/cm。
在一些实施方式中，将所述导电浆料施加在绝缘基材第一面的方式包括印刷、涂布或点胶方式中的任意一种或多种的组合，但不限于此。
在一些实施方式中，以第二导电材料在绝缘基材第二面形成第二导电层的方式包括物理和/或化学沉积方式，例如可以是印刷、涂布、点胶、真空蒸镀或磁控溅射方式中的任意一种或多种的组合，且不限于此。
在一些实施方式中，所述的制造方法具体包括：至少采用喷墨打印、气流喷印、凹版印刷、丝网印刷、柔版印刷、掩模喷涂中的任意一种方式制作形成所述的第二导电层。
在一些实施方式中，所述第二导电层的厚度大于所述通孔于绝缘基材第二面的开口的边缘部相对于所述第二面的突起高度。
在一些实施方式中，所述第二导电层覆盖所述通孔于绝缘基材第二面的开口并自所述开口的边缘部沿径向向外延伸20μm以上，优选为50μm以上。
进一步的，所述第二导电层的形状没有特殊限制，而可以依据实际需要而任意调整。
进一步的，所述第二导电层的材质包括Au、Ag、Cu等各类具有良好导电性的金属或非金属材料。
在一些实施方式中，所述第二导电层至少分布在第三导电层一侧。
进一步的，所述第二导电层以半包围的形式设置在第三导电层周围。
进一步的，所述第二导电层围绕第三导电层设置。
在一些实施方式中，所述第二导电层为线条状，且线条宽度≤5mm，优选为≤1mm。
在一些实施方式中，所述第二导电层的最高点相比于第三导电层的突起高度<5μm，优选<1μm。
在一些实施方式中，所述第二导电层与第三导电层至少部分交叠。例如，可以使通孔连续贯穿绝缘基材和预先设置在绝缘基材第二面的第三导电层，并使第二导电层至少部分叠设在第三导电层上。或者，也可以先在绝缘基材第二面形成第二导电层，然后在绝缘基材第二面形成第三导电层，并使第三导电层至少部分叠设在第二导电层上。
在一些实施方式中，所述第二导电层的等效方块电阻≤5Ω/sq，优选≤1Ω/sq。
如本领域人员所知的，无论是真正意义上的透明导电材料(如金属氧化物、pedot:pss、石墨烯等)，还是金属网栅、纳米线网络等依靠空隙透光的解决方案，其工作原理都决定了同款产品在光学透过率不变的情况下，虽然单位面积下的方块电阻也会保持一致，但实际的整体电阻会显著增加，透明电极本身电阻带来的电压降效应也更加明显。因此，在其它参数不变的前提下，智慧幕墙、显示、太阳能电池等产品的尺寸增加就意味着透明电极的电阻提高，从而导致性能的下降。因此，如何在保证足够的光学透过率的前提下尽量低成本、有效的降低透明电极的总电阻，这是本领域渴求解决的难题之一。
在本申请的以上实施方式中，通过在透明导电层***设置电阻较低的第二导电层作为导电通路，利用电路本身特有的“短路效应”，可以在不改变透明电极本身导电性的前提下，为大面积的透明电极提供低成本、高性能的“绕城高速”，进而有效提高产品的整体性能，且工艺流程简便、成本低廉、适应面广，并有利于后续的太阳能电池模组组装工艺。
本申请的一些实施例还提供了由前述的任一者方法制作形成的互通电极结构。
进一步的，所述互通电极结构包括形成于透明绝缘基材内的导电通道，所述导电通道包括沿厚度方向贯穿透明绝缘基材的通孔、由自所述通孔在透明绝缘基材第一面的开口进入通孔的导电浆料形成的第一导电体、由自所述通孔在透明绝缘基材第二面的开口进入通孔的导电材料形成的第二导电体，所述第一导电体与第二导电体电性结合，所述透明绝缘基材第二面还设置有第三导电层和由导电材料形成的第二导电层，所述第二导电层与第二导电体一体形成，所述第三导电层与第二导电层电性接触。
进一步的，所述第三导电层为透明导电层。
进一步的，所述透明绝缘基材第一面还设置有由导电浆料形成的导电结构，所述导电结构与所述第一导电体一体形成。
本申请的一些实施例还提供了所述互通电极结构的用途，例如在制作多种光电器件中的用途。
进一步的，本申请的一些实施例一种装置，包括功能模块和与所述功能模块配合的电极模块，所述电极模块包括所述的互通电极结构。所述的装置可以是包含光电元件、发光元件、 电子元件的电子、机械装置等。其中的功能模块可以包括LED、OLED、薄膜光伏电池、激光器等，且不限于此。
如下将结合若干实施例及附图对本申请的技术方案进行更为详细的说明。需要指出的是，若非特别说明，则如下实施例中采用的各原材料、化学试剂及设备等均可以通过市场购买等途径获取，而其中诸如印刷、喷涂、旋涂、磁控溅射等操作均可以依据本领域已知的方式实施。
实施例1 本实施例提供的一种互通电极结构如图1a所示，其包括聚酰亚胺(PI)薄膜10和沿厚度方向贯穿该PI薄膜10的通孔103。该通孔103内分布有第一导电体20’和第二导电体40’，该第一导电体20’和第二导电体40’电性结合从而在该PI薄膜10内形成导电通道。该第一导电体20’由从通孔103位于PI薄膜正面(第一面101)的开口进入通孔103的导电银浆20固化形成，该第一导电体20’底端位于通孔103两端之间的一个位置，该第二导电体40’由通孔103位于PI薄膜背面(第二面102)的开口进入通孔103的Au形成。同时，该PI薄膜正面还可以余留部分的导电银浆20形成第一导电层，该PI薄膜背面还可设置作为第二导电层的Au层，该Au层可以与第二导电体40’一体形成。另外，该PI薄膜背面还可设置作为第三导电层的透明导电层30，该透明导电层30与Au层电性接触。
一种制造所述互通电极结构的方法如图1b所示，其包括如下步骤：
(1)在厚度为300μm左右的PI薄膜10上加工出多个通孔103，各通孔均垂直贯穿该PI薄膜，各通孔可以是圆形、多边形或其它不规则的形状。其中单个通孔的周长范围为10-50μm左右，在PI薄膜正面(第一面101)的开口面积或在背面(第二面102)的开口面积在0.03mm 2以下，且各通孔在PI薄膜正面、背面的开口的边缘的突起高度均小于1μm；
(2)在PI薄膜10正面分布有前述通孔的区域涂布粘度为20-80cP的导电银浆20(其中主要溶剂成分的表面张力为35-72dyn/cm)，使部分的导电银浆在重力作用下自行进入各通孔，但在距离PI薄膜背面一定距离处自动停滞，之后使前述导电银浆固化，且使各通孔内的导电银浆形成第一导电体20’；
(3)在PI薄膜背面除前述通孔所在区域之外的其余区域制作由金属纳米线(例如银纳米线)薄膜形成的透明导电层30；
(4)在PI薄膜背面分布有前述通孔的区域通过磁控溅射方式沉积Au层40，Au层40与透明导电层30电性接触，该Au层的厚度高于各通孔在PI薄膜背面的开口边缘的突起高度，Au层沉积区域覆盖并超出各通孔在PET薄膜背面的开口边缘20μm以上，且无形状限制，其中Au层的局部区域还进入各通孔形成第二导电体40’，且使第二导电体与第一导电体电性结 合，从而形成贯穿PI薄膜的导电通道50，进而获得互通电极结构，亦可认为获得了一种预留贯穿电路的透明电极。
基于所述透明电极，可以制作各类光电器件。例如可以在PI薄膜带有金属纳米线薄膜的一面制备有机发光器件(OLED)。由于该器件可以通过贯穿导电通道将导线安排在PI薄膜的另一面，在实际应用中意味着OLED的电路装配可以有更多的选择，甚至有可能实现更窄的边框，使之适合在可弯折屏幕电极等产品中应用，但不限于此。
实施例2 一种制造互通电极结构的方法，参阅图2所示，其包括如下步骤：
(1)在厚度为150μm左右的聚酯(PET)薄膜60背面形成ITO透明导电层80；
(2)在聚酯(PET)薄膜上加工出多个通孔603，各通孔均垂直贯穿该PET薄膜，各通孔可以是圆形、多边形或其它不规则的形状。其中单个通孔的周长范围为500-800μm左右，在PET薄膜正面(第一面601)的开口面积或在背面(第二面602)的开口面积在0.13mm 2以下，且各通孔在PET薄膜正面、背面的开口的边缘的突起高度均小于5μm；
(3)在PET薄膜正面分布有前述通孔的区域涂布粘度为80000-100000cP的导电银浆70(其中主要溶剂成分的表面张力为15-40dyn/cm)，使部分的导电银浆在重力作用下自行进入各通孔，但在距离PET薄膜背面一定距离处自动停滞，并因溶剂挥发而干燥成为固体，形成第一导电体70’；
(4)在PET薄膜背面分布有前述通孔的区域通过磁控溅射方式沉积Ag层90，Ag层90与ITO透明导电层80电性接触，该Ag层的厚度高于各通孔在PET薄膜背面的开口边缘的突起高度，Ag层沉积区域覆盖并超出各通孔在PET薄膜背面的开口边缘50μm以上，且无形状限制，其中Ag层的局部区域还进入各通孔形成第二导电体90’，且使第二导电体与第一导电体电性结合，从而形成贯穿PET薄膜的导电通道，进而获得互通电极结构，亦可认为获得了一种预留贯穿电路的透明电极。
基于所述透明电极，可以制作各类光电器件。例如可以在将该薄膜带有ITO层的一面作为薄膜太阳能电池的电极。由于该电极可以通过导电的互通电极结构在PET薄膜的另一面与外接的电路进行连接，因此在应用时具有更加显著的便利性。
实施例3 一种制造互通电极结构的方法，包括如下步骤：
(1)在厚度为100-120μm左右的聚氨酯(PU)薄膜上加工出多个通孔，各通孔均垂直贯穿该PU薄膜，各通孔可以是圆形、多边形或其它不规则的形状。其中单个通孔的周长范围为60-100μm左右，在PU薄膜正面(第一面)的开口面积或在背面(第二面)的开口面积在0.03mm 2以下，且各通孔在PU薄膜正面、背面的开口的边缘的突起高度均小于1μm；
(2)在PU薄膜正面分布有前述通孔的区域涂布粘度为100-300cP的导电银浆(其中主要溶剂成分的表面张力为25-60dyn/cm)，使部分的导电银浆在重力作用下自行进入各通孔，但在距离PU薄膜背面一定距离处自动停滞，之后使前述导电银浆固化，且使各通孔内的导电银浆形成第一导电体；
(3)在PU薄膜背面除前述通孔所在区域之外的其余区域制作由碳纳米管薄膜形成的透明导电层；
(4)在PU薄膜背面分布有前述通孔的区域通过磁控溅射方式沉积Cu层，该Cu层与透明导电层电性接触，Cu层的厚度高于各通孔在PU薄膜背面的开口边缘的突起高度，Cu层沉积区域覆盖并超出各通孔在PU薄膜背面的开口边缘20μm以上，且无形状限制，其中Cu层的局部区域还进入各通孔形成第二导电体，且使第二导电体与第一导电体电性结合，从而形成贯穿PU薄膜的导电通道，进而获得互通电极结构，亦可认为获得了一种预留贯穿电路的透光性电极。
基于所述透明电极，可以制作各类光电器件。例如可以在PU薄膜带有碳纳米管薄膜的一面通过先蚀刻电路、再绑定Mini LED芯片的方法制造显示屏。当Cu层可以通过预留贯穿电路实现背后施加电压时，在特定条件下可以实现无边框的显示电路。
实施例4 一种制造互通电极结构的方法，包括如下步骤：
(1)在厚度为130-150μm左右的玻璃上加工出多个通孔，各通孔均垂直贯穿该玻璃，各通孔可以是圆形、多边形或其它不规则的形状。其中单个通孔的周长范围为300-400μm左右，在玻璃正面(第一面)的开口面积或在背面(第二面)的开口面积在0.03mm 2以下，且各通孔在玻璃正面、背面的开口的边缘的突起高度均小于1μm；
(2)在玻璃正面分布有前述通孔的区域涂布粘度为800-1000cP的导电银浆(其中主要溶剂成分的表面张力为30-60dyn/cm)，使部分的导电银浆在重力作用下自行进入各通孔，但在距离玻璃背面一定距离处自动停滞，之后使前述导电银浆固化，且使各通孔内的导电银浆形成第一导电体；
(3)在玻璃背面除前述通孔所在区域之外的其余区域制作由pedot:pss形成的透明导电层；
(4)在玻璃背面分布有前述通孔的区域通过磁控溅射方式沉积Cu层，该Cu层与透明导电层电性接触，Cu层的厚度高于各通孔在玻璃背面的开口边缘的突起高度，Cu层沉积区域覆盖并超出各通孔在玻璃背面的开口边缘50μm以上，且无形状限制，其中Cu层的局部区 域还进入各通孔形成第二导电体，且使第二导电体与第一导电体电性结合，从而形成贯穿玻璃的导电通道，进而获得互通电极结构，亦可认为获得了一种预留贯穿电路的透明电极。
基于所述透明电极，可以制作各类光电器件。例如可以在玻璃带有透明导电层的一面布设OLED的主体结构。
实施例5 一种制造互通电极结构的方法，包括如下步骤：
(1)在厚度为140-150μm左右的聚氨酯(PU)薄膜上加工出多个通孔，各通孔均垂直贯穿该PU薄膜，各通孔可以是圆形、多边形或其它不规则的形状。其中单个通孔的周长范围为200-250μm左右，在PU薄膜正面(第一面)的开口面积或在背面(第二面)的开口面积在0.03mm 2以下，且各通孔在PU薄膜正面、背面的开口的边缘的突起高度均小于1μm；
(2)在PU薄膜正面分布有前述通孔的区域涂布粘度为400-500cP的导电银浆(其中主要溶剂成分的表面张力为27-65dyn/cm)，使部分的导电银浆在重力作用下自行进入各通孔，但在距离PU薄膜背面一定距离处自动停滞，之后使前述导电银浆固化，且使各通孔内的导电银浆形成第一导电体；
(3)在PU薄膜背面除前述通孔所在区域之外的其余区域制作由石墨烯薄膜形成的透明导电层；
(4)在PU薄膜背面分布有前述通孔的区域通过磁控溅射方式沉积Cu层，该Cu层与透明导电层电性接触，Cu层的厚度高于各通孔在PU薄膜背面的开口边缘的突起高度，Cu层沉积区域覆盖并超出各通孔在PU薄膜背面的开口边缘50μm以上，且无形状限制，其中Cu层的局部区域还进入各通孔形成第二导电体，且使第二导电体与第一导电体电性结合，从而形成贯穿PU薄膜的导电通道，进而获得互通电极结构，亦可认为获得了一种预留贯穿电路的透明电极。
基于所述透明电极，可以制作各类光电器件。例如可以在PU薄膜带有透明导电层的一面布设紫外光探测器的主体结构。
实施例6 一种薄膜太阳能电池的制备方法，其包括如下步骤：
(1)与实施例2基本相同；
(2)与实施例2基本相同；
(3)与实施例2基本相同；
(4)与实施例2基本相同，但参阅图3及图4，其中形成的Ag层4围绕透明导电层21设置，并与透明导电层21电性接触；
(5)按照本领域已知的方式，在透明导电层21上依次制作电子传输层22(如氧化锌薄膜层，厚度约50nm)、活性层23(如PM6:Y6活性层，厚度约100nm)、空穴传输层24(如MoO3薄膜，厚度约10nm)、金属顶电极25(如金属Al，厚度约100nm)，从而在聚酯薄膜1上形成薄膜太阳能电池2(定义为本申请产品)。
该薄膜太阳能电池2可以作为电池模组的基本结构单元，通过银浆3方便地与其它电池单元连接。并且，通过前述Ag层，还可以在不改变透明电极本身导电性的前提下，有效提高产品的整体性能。其中，图4所示方案尤其适于在具有较大尺寸透明电极(≥10mm，优选的≥50mm)的器件中使用。其中，Ag层4可以设置为导电线条形态，其宽度可以设置为≤5mm，优选≤1mm，线条的等效方块电阻≤5Ω/sq，优选≤1Ω/sq。以及，与透明导电电极相比，Ag层4最高点突起高度小于5微米，优选小于1微米。此外，Ag层4还可以采用本领域已知的其它方式，例如喷墨打印、气流喷印、凹版印刷、丝网印刷、柔版印刷、MASK喷涂等制作形成。
作为对照，可以参照以上的步骤(5)，但直接在厚度为150μm左右的聚酯薄膜上依次形成ITO透明导电层、电子传输层、活性层、空穴传输层、金属顶电极，从而在聚酯薄膜上形成薄膜太阳能电池(定义为对照产品)。
对比本申请产品与对照产品，可以发现，本申请产品与对照产品相比，最突出的优势在于后期装配上的便利性，可直接在电池的背面连接电路，无需为了连接电池正面的电极而考虑过孔步线。此外，得益于第二导电体的存在，透明电极的实际等效方块电阻显著降低，通常可提升5％以上的太阳能电池效率。
可以认为，本申请以上实施例实际上提供了一种预留贯穿电路的透明电极制造方法，其中充分利用了银浆等导电浆料本身的表面张力、黏度与溶剂挥发性等特点，设计出一个合理的工艺窗口。具体来说，是充分利用流体状导电材料(导电浆料)内部的流动阻力，及其与贯穿孔壁之间的相互间作用力来抵消导电材料本身所受到的重力作用，实现微妙的平衡，以保证上述导电材料能够停留在通孔中部的指定位置，实现预期的工艺目标。该方法具有工艺简单、制造成本低等优点，所获透明电极导电性能良好、良品率高，可以有效避免“先制造器件、后贯穿绝缘层”模式所带来的工艺难度大、良品率低等问题。
本申请的各方面、实施例、特征及实例应视为在所有方面为说明性的且不打算限制本申请，本申请的范围仅由权利要求书界定。在不背离所主张的本申请的精神及范围的情况下，所属领域的技术人员将明了其它实施例、修改及使用。
在本申请案中标题及章节的使用不意味着限制本申请；每一章节可应用于本申请的任何方面、实施例或特征。尽管已参考说明性实施例描述了本申请，但所属领域的技术人员将理解，在不背离本申请的精神及范围的情况下可做出各种其它改变、省略及/或添加且可用实质等效物替代所述实施例的元件。
另外，可在不背离本申请的范围的情况下做出许多修改以使特定情形或材料适应本申请的教示。因此，本文并不打算将本申请限制于用于执行本申请的所揭示特定实施例，而是打算使本申请将包含归属于所附权利要求书的范围内的所有实施例。此外，除非具体陈述，否则术语第一、第二等的任何使用不表示任何次序或重要性，而是使用术语第一、第二等来区分一个元素与另一元素。

Claims (26)

  1. 一种互通电极结构，其特征在于，包括：
    绝缘基材，所述绝缘基材具有相背对的第一面和第二面；
    通孔，所述通孔沿厚度方向贯穿所述绝缘基材；
    第一导电体，所述第一导电体由从所述通孔在所述第一面的开口进入所述通孔的导电浆料形成，所述第一导电体的底端到达所述通孔的两端之间的任一设定位置；
    第二导电体，所述第二导电体由从所述通孔在所述第二面的开口进入所述通孔的第二导电材料形成，并且所述第二导电体还与第一导电体电性结合，从而在所述绝缘基材内形成导电通道。
  2. 根据权利要求1所述的互通电极结构，其特征在于：所述绝缘基的第二面还形成第二导电层，所述第二导电层与第二导电体一体形成。
  3. 根据权利要求2所述的互通电极结构，其特征在于：所述绝缘基的第二面还设有第三导电层，并且所述第三导电层与第二导电层电性接触。
  4. 根据权利要求3所述的互通电极结构，其特征在于：所述第三导电层为透明导电层。
  5. 根据权利要求3所述的互通电极结构，其特征在于：所述第二导电层以半包围的形式设置在第三导电层周围，或者，所述第二导电层围绕第三导电层设置；和/或，所述第二导电层与第三导电层至少部分交叠。
  6. 根据权利要求2‐5中任一项所述的互通电极结构，其特征在于：所述第二导电层为线条状，且线条宽度≤5mm；和/或，所述第二导电层的等效方块电阻≤5Ω/sq。
  7. 根据权利要求2‐5中任一项所述的互通电极结构，其特征在于：所述第二导电层的厚度大于所述通孔于绝缘基材第二面的开口的边缘部相对于所述第二面的突起高度；和/或，所述第二导电层覆盖所述通孔于绝缘基材第二面的开口并自所述开口的边缘部沿径向向外延伸20μm以上。
  8. 根据权利要求3‐5中任一项所述的互通电极结构，其特征在于：所述第二导电层的最高点相比于第三导电层的突起高度<5μm。
  9. 根据权利要求1所述的互通电极结构，其特征在于：所述通孔于绝缘基材第一面或第二面的开口面积在0.13mm 2以下；和/或，所述通孔于绝缘基材第一面或第二面的开口周长为10-800μm；和/或，所述通孔于绝缘基材第一面或第二面的开口的边缘部相对于所述 第一面或第二面的突起高度小于5μm。
  10. 根据权利要求1所述的互通电极结构，其特征在于：所述透明绝缘基材第一面设置有由导电浆料形成的导电结构，所述导电结构与所述第一导电体一体形成。
  11. 根据权利要求1所述的互通电极结构，其特征在于：所述绝缘基材包括透明绝缘薄膜；和/或，所述绝缘基材的厚度为1-300μm。
  12. 一种互通电极结构的制造方法，其特征在于，包括：
    在绝缘基材的选定区域加工出通孔，所述通孔沿厚度方向贯穿所述绝缘基材；
    在所述绝缘基材的第一面施加包含第一导电材料的导电浆料，并使部分的导电浆料进入所述通孔且到达设定位置，所述选定位置位于所述通孔的两端之间；
    以第二导电材料在所述绝缘基材相背于第一面的第二面形成第二导电层，并使部分的第二导电材料进入所述通孔形成第二导电体，所述第二导电体与所述通孔内的第一导电体电性结合，所述第一导电体由进入所述通孔的所述导电浆料形成，从而在所述绝缘基材内形成导电通道。
  13. 根据权利要求12所述的制造方法，其特征在于，还包括：在所述绝缘基材的第二面形成第三导电层，所述第三导电层为透明导电层。
  14. 根据权利要求13所述的制造方法，其特征在于，具体包括：先在所述绝缘基材内形成所述导电通道，之后在所述绝缘基材的第二面形成第三导电层，且使所述第三导电层与第二导电层电性接触；或者，先在所述绝缘基材的第二面形成第三导电层，再在所述绝缘基材的选定区域加工出通孔，之后在所述绝缘基材内形成所述导电通道，且使所述第二导电层与第三导电层电性接触。
  15. 根据权利要求13所述的制造方法，其特征在于：所述透明导电层的材质包括金属氧化物、金属、导电聚合物、碳材料中的任意一种或多种的组合。
  16. 根据权利要求14或15所述的制造方法，其特征在于：所述第二导电层至少分布在第三导电层一侧；和/或，所述第二导电层与第三导电层至少部分交叠。
  17. 根据权利要求16所述的制造方法，其特征在于：所述第二导电层以半包围的形式设置在第三导电层周围，或者，所述第二导电层围绕第三导电层设置。
  18. 根据权利要求16所述的制造方法，其特征在于：所述第二导电层为线条状，且线条宽度≤5mm，优选为≤1mm；和/或，所述第二导电层的最高点相比于第三导电层的突起高度<5μm，优选<1μm。
  19. 根据权利要求18所述的制造方法，其特征在于：所述第二导电层的等效方块电阻 ≤5Ω/sq，优选≤1Ω/sq。
  20. 根据权利要求12所述的制造方法，其特征在于：以第二导电材料在绝缘基材第二面形成第二导电层的方式包括物理和/或化学沉积方式，优选包括印刷、涂布、点胶、真空蒸镀或磁控溅射方式中的任意一种或多种的组合。
  21. 根据权利要求20所述的制造方法，其特征在于，包括：至少采用喷墨打印、气流喷印、凹版印刷、丝网印刷、柔版印刷、掩模喷涂中的任意一种方式制作形成所述第二导电层。
  22. 根据权利要求12所述的制造方法，其特征在于：所述绝缘基材包括透明绝缘薄膜，优选的，所述透明绝缘薄膜的材质包括玻璃、聚酯、聚氨酯、聚酰亚胺中的任意一种或多种的组合；和/或，所述绝缘基材的厚度为1-300μm，优选为15-150μm。
  23. 根据权利要求12所述的制造方法，其特征在于：所述通孔于绝缘基材第一面或第二面的开口面积在0.13mm 2以下，优选在0.03mm 2以下；和/或，所述通孔于绝缘基材第一面或第二面的开口周长为10-800μm，优选为60-400μm；和/或，所述通孔于绝缘基材第一面或第二面的开口的边缘部相对于所述第一面或第二面的突起高度小于5μm，优选小于1μm。
  24. 根据权利要求12所述的制造方法，其特征在于：所述导电浆料的粘度为20-100000cP，优选为100-10000cP；和/或，所述导电浆料中主要溶剂成分的表面张力为15-72dyn/cm，优选为27-50dyn/cm；和/或，将所述导电浆料施加在绝缘基材第一面的方式包括印刷、涂布或点胶方式中的任意一种或多种的组合。
  25. 根据权利要求12所述的制造方法，其特征在于：所述第二导电层的厚度大于所述通孔于绝缘基材第二面的开口的边缘部相对于所述第二面的突起高度；和/或，所述第二导电层覆盖所述通孔于绝缘基材第二面的开口并自所述开口的边缘部沿径向向外延伸20μm以上，优选为50μm以上。
  26. 一种装置，包括功能模块和与所述功能模块配合的电极模块，其特征在于：所述电极模块包括权利要求1-11中任一项所述的互通电极结构。
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