WO2022142431A1 - 双能辐射平板探测器、制备方法及探测*** - Google Patents

双能辐射平板探测器、制备方法及探测*** Download PDF

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WO2022142431A1
WO2022142431A1 PCT/CN2021/115945 CN2021115945W WO2022142431A1 WO 2022142431 A1 WO2022142431 A1 WO 2022142431A1 CN 2021115945 W CN2021115945 W CN 2021115945W WO 2022142431 A1 WO2022142431 A1 WO 2022142431A1
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energy
layer
dual
ray
photosensitive pixels
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French (fr)
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韦小庆
李桂锋
金利波
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上海奕瑞光电子科技股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14632—Wafer-level processed structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing

Definitions

  • the invention relates to the technical field of X-ray detection, in particular to a dual-energy radiation flat panel detector, a preparation method and a detection system.
  • a complete radiation image chain mainly includes the following components: radiation source, object to be measured, radiation detector, rack and back-end display system.
  • the radiation source and the radiation detector are the two core components in the imaging chain, which play a crucial role in the imaging quality, and also determine whether the imaging system can meet the needs of certain specific scenarios.
  • a monochromatic ray source such as the ray generated by the synchrotron radiation source or the characteristic ray of the metal target
  • the detector to detect the diffracted ray, and then use the Bragg diffraction principle to analyze the to-be-measured ray.
  • the crystal structure of the material In the fields of medical imaging and industrial inspection, the rays emitted by the used ray sources are not monochromatic, but continuous broad-spectrum rays like the solar spectrum.
  • the energy spectrum information will change accordingly.
  • the material composition of the object to be tested can be analyzed.
  • spectrometers are expensive, even higher than commonly used radiation or flat panel detectors.
  • dual-energy radiation detectors are widely used in the industry to analyze the density and composition differences of substances in the object to be measured.
  • the dual-energy linear array security inspection machine combines X-ray fluoroscopy technology with dual-energy technology to analyze the density and atomic number of substances in luggage, thereby improving the detection rate of dangerous goods.
  • the dual-energy subtraction technology can selectively remove the attenuation information of bones or soft tissues in the body, obtain a diagnostic image of "separation of bone and flesh", and improve the detection rate and diagnostic accuracy of diseases.
  • This technology is used in Digital Radiography (digital X-ray photography) and Dual Energy CT (dual energy CT).
  • the traditional dual-energy radiation detector consists of two sets of detection systems.
  • the rays first pass through the scintillator of the first thin layer, and the X photons in the low energy band are absorbed by the first thin layer of scintillator and converted into visible light photons, and the generated visible light photons are subsequently It is detected by the first layer of photoelectric sensing array and gives a low-energy image; after the high-energy radiation passes through the first thin layer of scintillator and the first layer of photoelectric sensor array, it enters the second layer of scintillator and is converted The visible light photons are detected by the second-layer photoelectric sensing array to form a high-energy image.
  • the solutions described in the patent applications with publication numbers CN101937095B and CN111198397A.
  • This dual-energy radiation detector using two sets of detection systems will undoubtedly greatly increase the cost of the detector system, and cause the detector system to be complicated in structure and bulky.
  • the alignment accuracy of the upper and lower sets of detectors will also have a great impact on data analysis, and inaccurate alignment will often lead to measurement deviations, which in turn lead to reduced imaging quality.
  • the purpose of the present invention is to provide a dual-energy radiation flat panel detector, a preparation method thereof, and a detection system, which are used to solve the problem that the dual-energy radiation detector in the prior art consists of two It is composed of a set of detection systems, which increases the cost of the detector system, and has problems such as complex structure and large volume, which limit its application scenarios, and the alignment accuracy of the upper and lower sets of detectors will also have a great impact on data analysis. , inaccurate alignment often leads to measurement deviation, which in turn leads to problems such as image quality degradation.
  • the present invention provides a dual-energy radiation flat panel detector, which sequentially includes a first scintillator layer, a photoelectric sensor array, and a transparent substrate along the X-ray incident direction. , a ray filter layer and a second scintillator layer; wherein, the photoelectric sensor array layer includes alternately distributed first photosensitive pixels and second photosensitive pixels, and the first photosensitive pixels and the second photosensitive pixels have opposite photosensitive directions to respectively
  • the ray filtering layer is used for filtering low-energy X-rays and preventing the luminescence scattering of the second scintillator layer.
  • the thickness of the second scintillator layer is greater than the thickness of the first scintillator layer.
  • the ray filtering layer includes an optical fiber panel.
  • the transparent substrate includes a combination of one or more of PI material layers, ultra-thin glass and PET material layers.
  • the first photosensitive pixels and the second photosensitive pixels are arranged in an alternating array of rows and columns.
  • the first photosensitive pixel includes a photodiode with a transparent top electrode and an opaque bottom electrode and the second photosensitive pixel includes a photodiode with a transparent bottom electrode and an opaque top electrode, or the second photosensitive pixel includes a transparent top electrode and a transparent top electrode.
  • a photodiode with an opaque bottom electrode and a first photosensitive pixel includes a photodiode with a transparent bottom electrode and an opaque top electrode.
  • the present invention also provides a preparation method of a dual-energy radiation flat panel detector, comprising the steps of:
  • a photosensor array layer and a first scintillator layer are sequentially formed on the upper surface of the transparent substrate.
  • the photosensor array layer includes alternately distributed first photosensitive pixels and second photosensitive pixels.
  • the first photosensitive pixels and the second photosensitive pixels have Opposite photosensitive directions for low-energy X-ray imaging and high-energy X-ray imaging, respectively;
  • a second scintillator layer is integrated on the lower surface of the ray filtering layer
  • the upper surface of the radiation filtering layer and the lower surface of the transparent substrate are coupled together.
  • the present invention also provides a detection system, which includes the dual-energy radiation flat panel detector as described in any one of the above solutions.
  • the dual-energy radiation flat panel detector, preparation method and detection system of the present invention have the following beneficial effects: the improved structural design of the present invention uses a single-layer photoelectric sensor array to simultaneously acquire low-energy and high-energy dual-energy spectrum objects The low-energy rays are filtered through the ray filtering layer and the second scintillator layer is prevented from luminous scattering, thereby helping to improve the material resolution capability of the detector, improve the image quality, and improve the diagnostic accuracy.
  • the detection system based on the dual-energy radiation flat panel detector of the present invention greatly simplifies the structure and reduces the volume, which not only helps to reduce the cost of the system, but also increases the mobility and flexibility of the system. The scope of application is wider.
  • FIG. 1 shows a schematic structural diagram of a dual-energy radiation flat panel detector provided by the present invention.
  • FIG. 2 is a schematic diagram of the cross-sectional structure of FIG. 1 .
  • FIG. 3 is a schematic diagram showing the configuration of the photosensitive pixels of the photosensor array layer in the dual-energy radiation flat panel detector provided by the present invention.
  • the present invention provides a dual-energy radiation flat panel detector, which sequentially includes a first scintillator layer 11 , a photoelectric sensor array, and a transparent lining along the X-ray incident direction.
  • the photosensor array layer 12 includes alternately distributed first photosensitive pixels 121 and second photosensitive pixels 122, first photosensitive pixels 121 and second photosensitive pixels 121
  • the pixels 122 have opposite photosensitive directions for realizing low-energy X-ray imaging and high-energy X-ray imaging, respectively, and the ray filtering layer 14 is used for filtering low-energy X-rays and preventing the second scintillator layer 15 from scattering light.
  • the first scintillator layer 11 is used to absorb low-energy X-rays and convert the absorbed low-energy X-rays into visible light
  • the second scintillator layer 15 is used to absorb high-energy X-rays and convert the absorbed high-energy X-rays into visible light.
  • X-rays are converted into visible light
  • the first photosensitive pixel 121 and the second photosensitive pixel 122 are used to convert the visible light converted by the corresponding scintillator layer into electric charge and store it.
  • Storage the definitions of the first photosensitive pixel 121 and the second photosensitive pixel 122 can also be interchanged, and processed by the image processing device to output a low-energy X-ray image and a high-energy X-ray image at the same time.
  • the improved structural design of the present invention uses a single-layer photoelectric sensor array to simultaneously acquire low-energy and high-energy dual-energy spectral object images, and filters low-energy rays through a ray filtering layer and prevents the second scintillator layer from luminous scattering, thereby contributing to Improve the material resolution capability of the detector, improve the image quality, and improve the diagnostic accuracy.
  • the detection system based on the dual-energy radiation flat panel detector of the present invention greatly simplifies the structure and reduces the volume, which not only helps to reduce the cost of the system, but also increases the mobility and flexibility of the system. The scope of application is wider.
  • the first photosensitive pixel 121 and the second photosensitive pixel 122 both include TFT thin film transistors and photodiodes 128 , and the TFT transistors specifically include gate electrodes 123 and active layers 124 , source electrode 125 and drain electrode 126, the photodiode 128 of each photosensitive pixel can be connected to the drain electrode of the corresponding TFT thin film transistor, and a light shielding layer 127 is arranged above the TFT thin film transistor to block the light emitted by the scintillator Influence on the TFT active layer, the TFT thin film transistor and the light shielding layer 127 are spaced apart by an insulating material layer. Since the structures and principles of the TFT thin film transistor and the photodiode are well known to those skilled in the art, this will not be described in detail. It is important that adjacent photosensitive pixels have different photosensitive directions.
  • the first photosensitive pixels 121 and the second photosensitive pixels 122 are arranged in an alternating array of multiple rows and columns and are distributed in a checkerboard structure, and the pixel grayscales missing in the low-energy and high-energy pixels are The value can be replaced by the mean of the surrounding 4 pixels (the part marked by the dotted box) that are co-edged with it, and one image from a single exposure can be transformed into a low-energy image and a high-energy image.
  • the materials of the first scintillator layer 11 and the second scintillator layer 15 may be the same or different, and may be selected from, but not limited to, GOS (Gd 2 O 2 S), NaI (Tl), LaCl 3 (Ce) , CsI (Tl, Na), LaBr 3 (Ce), YAlO 3 (Ce), C S I, GOS (Tb, Pr, Ce, F), CaWO 4 , Gd 3 Ga 5 O 12 (Cr, Ce), One or more of Lu 2 Si 2 O 7 (Ce), CdWO 4 , BGO, Lu 2 SiO 5 (Ce), LuAlO 3 (Ce), YTaO 4 (Nb), but preferably the second scintillator
  • the thickness of the layer 15 is greater than the thickness of the first scintillator layer 11, that is, the first scintillator layer 11 has a relatively lower thickness to reduce the absorption of high-energy X-rays while absorbing low-energy X-rays,
  • the ray filter layer 14 can not only filter out some low-energy rays, but also can reduce the divergence angle of the visible light emitted by the second scintillator layer 15 and improve the resolution of high-energy images. Therefore, the material of the ray filter layer 14 is selected. Very important. Preferably, the material of the ray filtering layer 14 can be an optical fiber panel (Fiber Optic Plates, FOP for short), which has the advantages of high light transmission efficiency, small inter-stage coupling loss, clear and real image transmission, and optically zero thickness. Etc.
  • FOP Fiber Optic Plates
  • the transparent substrate 13 includes a combination of one or more of a PI (Polyimide, polyimide) material layer, an ultra-thin glass, and a PET (Polyethylene terephthalate, polyester) material layer, and its thickness may be 10 ⁇ m ⁇ 20 ⁇ m.
  • PI Polyimide, polyimide
  • PET Polyethylene terephthalate, polyester
  • the dual-energy radiation flat panel detector provided by the present invention can simultaneously acquire low-energy and high-energy dual-energy spectrum object images only by using a single-layer photoelectric sensor array. Compared with the traditional dual-energy radiation flat panel detector, its structure is greatly simplified. The volume can be greatly reduced, which makes it not only applicable to conventional operating environments, but also to various workplaces that require mobile operations, such as field hospitals, mobile security checkpoints, etc. Therefore, the present invention also provides a detection system, which includes the dual-energy radiation flat panel detector as described in any of the above solutions. For the introduction of the dual-energy radiation flat panel detector, please refer to the foregoing content, for The purpose of brevity is not repeated. Of course, the detection system also includes structures such as an image processing device.
  • the system structure can be greatly simplified, the volume can be greatly reduced, the system cost can be effectively reduced, and the applicability of the system can be improved.
  • the present invention also provides a preparation method of a dual-energy radiation flat panel detector, and the preparation method of the present invention can be used to prepare the dual-energy radiation flat panel detector as described in any of the above solutions, or in any of the foregoing solutions.
  • the dual-energy radiation flat-panel detector can be prepared based on this preparation method (of course, it can also be prepared based on other methods), so the aforementioned introduction to the dual-energy radiation flat-panel detector can be cited here in its entirety, and will not be repeated for the sake of brevity .
  • the preparation method comprises the steps:
  • a photosensor array layer and a first scintillator layer are sequentially formed on the upper surface of the transparent substrate.
  • the photosensor array layer includes alternately distributed first photosensitive pixels and second photosensitive pixels.
  • the first photosensitive pixels and the second photosensitive pixels have The opposite photosensitive directions are used to realize low-energy X-ray imaging and high-energy X-ray imaging respectively; for example, corresponding thin film structures can be formed step by step on a transparent substrate based on conventional semiconductor manufacturing processes to form corresponding TFT thin film transistors and photodiodes.
  • the first photosensitive pixel and the second photosensitive pixel are formed to form the photosensor array layer, and then the first scintillator layer is formed by vacuum evaporation or direct bonding process, for example, if the first scintillator layer is CS I and other materials can be directly evaporated in a vacuum evaporation furnace. If it is a material such as GOS, the first scintillator layer can be made into a film layer of a certain thickness, and then glued or glued to the film. on the photoelectric sensor array layer;
  • Integrate a second scintillator layer on the lower surface of the ray filtering layer for example, use a bonding process to form the second scintillator layer on the lower surface of the ray filtering layer, for example, use glue or glue film to attach the second scintillator layer Fitted to the lower surface of the ray filtering layer;
  • the upper surface of the ray filtering layer and the lower surface of the transparent substrate are coupled together, such as through optically transparent glue, which is not specifically limited. Since the high-energy pixels and the low-energy pixels are located in the same layer, there is no need to consider the problem of upper and lower alignment, so the fabrication process can be greatly simplified.
  • the present invention provides a dual-energy radiation flat panel detector, a method for manufacturing the same, and a detection system.
  • the dual-energy radiation flat panel detector sequentially includes a first scintillator layer, a photoelectric sensor array, a transparent substrate, a ray filtering layer and a second scintillator layer along the X-ray incident direction; wherein, the photoelectric sensor array layer includes The first photosensitive pixels and the second photosensitive pixels are alternately distributed, and the first photosensitive pixels and the second photosensitive pixels have opposite photosensitive directions for realizing low-energy X-ray imaging and high-energy X-ray imaging respectively, and the ray filtering layer is used for Filtering low-energy X-rays and preventing luminescence scattering of the second scintillator layer
  • the improved structural design of the present invention uses a single-layer photosensor array to simultaneously acquire images of low-energy and high-energy dual-energy spectral objects, and filters low-energy rays and The second scintillator is prevented from scattering light,
  • the detection system based on the dual-energy radiation flat panel detector of the present invention greatly simplifies the structure and reduces the volume, which not only helps to reduce the cost of the system, but also increases the mobility and flexibility of the system. The scope of application is wider. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

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Abstract

本发明提供一种双能辐射平板探测器、制备方法及探测***。探测器沿X射线入射方向上依次包括第一闪烁体层、光电传感器阵列、透明衬底、射线滤过层及第二闪烁体层；其中，光电传感器阵列层包括交替分布的第一感光像素及第二感光像素，第一感光像素和第二感光像素具有相反的感光方向以分别用于实现低能X射线成像和高能X射线成像，射线滤过层用于过滤低能X射线和防止第二闪烁体层发光散射。本发明使用单层光电传感器阵列以同时获取低能和高能的双能谱物体图像，并通过射线滤过层过滤低能射线和防止第二闪烁体发光散射，有助于提高探测器的物质分辨能力，改善图像质量，提高诊断准确率。且结构极大简化，体积可以大大减小，有助于降低***成本。

Description

双能辐射平板探测器、制备方法及探测*** 技术领域
本发明涉及X射线探测技术领域，特别是涉及一种双能辐射平板探测器、制备方法及一种探测***。
背景技术
平板数字X射线探测器通常应用于医疗辐射成像、工业检测及安检等领域。一条完整的辐射影像链主要包括以下部件：射线源、待测物体、辐射探测器、机架以及后端显示***。其中，射线源与辐射探测器是影像链中的两大核心部件，对成像品质起着至关重要的作用，同时也决定了成像***能否满足某些特定场景使用的需求。比如，在晶体结构分析领域，需要使用单色的射线源，如同步辐射光源产生的射线或者金属靶材的特征射线，利用探测器来探测衍射后的射线，而后利用布拉格衍射原理来分析待测材料的晶体结构。而在医学成像及工业检测等领域，所用射线源发出的射线并非是单色的，而是像太阳光谱一样的连续广谱射线。
由于不同的物质对射线的衰减能力不一，该射线穿过某一物体之后，其能谱信息会产生相应的变化。通过分析这一变化即可以分析出待测物体的物质成分。受光子计数速率及其计数准确性的限制，测量高光子流密度的射线能谱十分困难。此外，能谱仪的成本很高，甚至会高于常用的辐射或平板探测器。目前，业内广泛使用双能辐射探测器来分析待测物体中物质的密度与组分差异。比如，双能线阵安检机将X射线透视技术与双能量技术结合，可以分析出行李内物质的密度和原子序数，进而可以提高危险品的检出率。双能量减影技术可以选择性地去除骨骼或者身体内软组织的衰减信息，获得“骨肉分离”的诊断图像，提高对疾病的检出率和诊断准确度。这一技术在Digital Radiography(数字化X射线摄影)以及Dual Energy CT(双能CT)中均有应用。
传统的双能辐射探测器由两套探测***组成，射线首先穿过第一薄层的闪烁体，其中低能段的X光子被第一薄层闪烁体吸收转化成可见光光子，生成的可见光光子随后被第一层光电传感阵列探测到，并给出一幅低能图像；高能段射线穿过第一薄层闪烁体和第一层光电传感阵列之后，入射到第二层闪烁体，被转化成可见光光子后被第二层光电传感阵列探测到，形成一幅高能图像，具体可以参考公开号为CN101937095B及CN111198397A的专利申请中记载的方案内容。
这种采用两套探测***的双能辐射探测器无疑大大增加了探测器***的成本，且导致探 测器***结构复杂、体积庞大。此外，上下两套探测器的对位精度也会给数据分析造成很大的影响，对位不准往往会导致测量偏差，进而导致成像质量下降。
发明内容
鉴于以上所述现有技术的缺点，本发明的目的在于提供一种双能辐射平板探测器及其制备方法，以及一种探测***，用于解决现有技术中的双能辐射探测器由两套探测***组成，增加了探测器***的成本，且存在结构复杂、体积庞大等问题而导致其应用场景受限，且上下两套探测器的对位精度也会给数据分析造成很大的影响，对位不准往往会导致测量偏差，进而导致成像质量下降等问题。
为实现上述目的及其他相关目的，本发明提供一种双能辐射平板探测器，所述双能辐射平板探测器沿X射线入射方向上依次包括第一闪烁体层、光电传感器阵列、透明衬底、射线滤过层及第二闪烁体层；其中，所述光电传感器阵列层包括交替分布的第一感光像素及第二感光像素，第一感光像素和第二感光像素具有相反的感光方向以分别用于实现低能X射线成像和高能X射线成像，所述射线滤过层用于过滤低能X射线和防止第二闪烁体层发光散射。
可选地，所述第二闪烁体层的厚度大于所述第一闪烁体层的厚度。
可选地，所述射线滤过层包括光纤面板。
可选地，所述透明衬底包括PI材料层、超薄玻璃和PET材料层中的一种或多种的结合。
可选地，所述第一感光像素及第二感光像素呈多行多列交替阵列排布。
可选地，所述第一感光像素包括顶电极透明而底电极不透明的光电二极管而第二感光像素包括底电极透明而顶电极不透明的光电二极管，或所述第二感光像素包括顶电极透明而底电极不透明的光电二极管而第一感光像素包括底电极透明而顶电极不透明的光电二极管。
本发明还提供一种双能辐射平板探测器的制备方法，包括步骤：
在透明衬底的上表面依次形成光电传感器阵列层和第一闪烁体层，所述光电传感器阵列层包括交替分布的第一感光像素及第二感光像素，第一感光像素和第二感光像素具有相反的感光方向以分别用于实现低能X射线成像和高能X射线成像；
在射线滤过层下表面集成第二闪烁体层；
将射线滤过层的上表面与透明衬底的下表面耦合到一起。
本发明还提供一种探测***，所述探测***包括如上述任一方案中所述的双能辐射平板探测器。
如上所述，本发明的双能辐射平板探测器、制备方法及探测***，具有以下有益效果：本发明经改善的结构设计，使用单层光电传感器阵列以同时获取低能和高能的双能谱物体图像，并通过射线滤过层过滤低能射线和防止第二闪烁体层发光散射，从而有助于提高探测器的物质分辨能力，改善图像质量，提高诊断准确率。基于本发明的双能辐射平板探测器的探测***，结构极大简化，体积可以大大减小，不仅有助于降低***成本，同时增加***的移动便利性和灵活性，使得本发明的探测***适用范围更加广泛。
附图说明
图1显示为本发明提供的双能辐射平板探测器的结构示意图。
图2显示为图1的截面结构示意图。
图3显示为本发明提供的双能辐射平板探测器中的光电传感器阵列层的感光像素的配置示意图。
元件标号说明
11                     第一闪烁体层
12                     光电传感器阵列层
121                    第一感光像素
122                    第二感光像素
123                    栅极
124                    有源层
125                    源极电极
126                    漏极电极
127                    遮光层
128                    光电二极管
具体实施方式
以下由特定的具体实施例说明本发明的实施方式，熟悉此技术的人士可由本说明书所揭露的内容轻易地了解本发明的其他优点及功效。
请参阅图1至图3。须知，本说明书所附图式所绘示的结构、比例、大小等，均仅用以配合说明书所揭示的内容，以供熟悉此技术的人士了解与阅读，并非用以限定本发明可实施的限定条件，故不具技术上的实质意义，任何结构的修饰、比例关系的改变或大小的调整，在不影响本发明所能产生的功效及所能达成的目的下，均应仍落在本发明所揭示的技术内容 所能涵盖的范围内。同时，本说明书中所引用的如“上”、“下”、“左”、“右”、“中间”及“一”等的用语，亦仅为便于叙述的明了，而非用以限定本发明可实施的范围，其相对关系的改变或调整，在无实质技术内容的变更下，当亦视为本发明可实施的范畴。
如图1至图3所示，本发明提供一种双能辐射平板探测器，所述双能辐射平板探测器沿X射线入射方向上依次包括第一闪烁体层11、光电传感器阵列、透明衬底13、射线滤过层14及第二闪烁体层15；其中，所述光电传感器阵列层12包括交替分布的第一感光像素121及第二感光像素122，第一感光像素121和第二感光像素122具有相反的感光方向以分别用于实现低能X射线成像和高能X射线成像，所述射线滤过层14用于过滤低能X射线和防止第二闪烁体层15发光散射。更具体地，第一闪烁体层11用于吸收低能量的X射线，并将吸收的低能X射线转化为可见光，第二闪烁体层15用于吸收高能量的X射线，并将吸收的高能X射线转化为可见光，第一感光像素121和第二感光像素122用于将对应的闪烁体层转化的可见光转换为电荷并存储，比如第一感光像素121包括顶电极透明而底电极不透明的光电二极管，以将第一闪烁体层11转化的可见光转换为电荷并存储，而另一者包括底电极透明而顶电极不透明的光电二极管，以将第二闪烁体层15转化的可见光转换为电荷并存储(第一感光像素121和第二感光像素122的定义也可以相互交换)，经图像处理装置处理后以同时输出低能X射线图像和高能X射线图像。本发明经改善的结构设计，使用单层光电传感器阵列以同时获取低能和高能的双能谱物体图像，并通过射线滤过层过滤低能射线和防止第二闪烁体层发光散射，从而有助于提高探测器的物质分辨能力，改善图像质量，提高诊断准确率。基于本发明的双能辐射平板探测器的探测***，结构极大简化，体积可以大大减小，不仅有助于降低***成本，同时增加***的移动便利性和灵活性，使得本发明的探测***适用范围更加广泛。
所述光电传感器阵列层12的具体结构可以参考图2所示，第一感光像素121和第二感光像素122均包括TFT薄膜晶体管和光电二极管128，TFT晶体管具体包括栅极123、有源层124、源极电极125和漏极电极126，每一感光像素的光电二极管128可与对应的TFT薄膜晶体管的漏极相连接，TFT薄膜晶体管上方设置有遮光层127，用于遮挡闪烁体发出的光对TFT活性层的影响,TFT薄膜晶体管和遮光层127之间通过绝缘材料层相间隔。由于TFT薄膜晶体管和光电二极管的结构和原理为本领域技术人员所熟知，对此不做详细展开，重要的是相邻的感光像素具有不同的感光方向。
为进一步提高成像质量，如图3所示，所述第一感光像素121及第二感光像素122呈多行多列交替阵列排布而呈棋盘结构分布，低能和高能像素中缺失的像素灰度值可以用与其共 边的周围4个像素(由虚线框标记的部分)的均值来代替，由单次曝光所得的一张图可以转化成一张低能图和一张高能图。
所述第一闪烁体层11和第二闪烁体层15的材料可以相同或不同，具体均可以选自包括但不限于GOS(Gd 2O 2S)、NaI(Tl)、LaCl 3(Ce)、CsI(Tl、Na)、LaBr 3(Ce)、YAlO 3(Ce)、C SI、GOS(Tb、Pr、Ce、F)、CaWO 4、Gd 3Ga 5O 12(Cr、Ce)、Lu 2Si 2O 7(Ce)、CdWO 4、BGO、Lu 2SiO 5(Ce)、LuAlO 3(Ce)、YTaO 4(Nb)中的一种或多种，但优选所述第二闪烁体层15的厚度大于所述第一闪烁体层11的厚度，即第一闪烁体层11具有相对较低的厚度，以在吸收低能X射线的同时减少对高能X射线的吸收，而第二闪烁体层15具有相对较大的厚度以充分吸收高能X射线。
所述射线滤过层14不仅可以滤除掉部分低能射线，同时可以减小第二闪烁体层15出射可见光的发散角，提高高能图像的分辨率，故而所述射线滤过层14的材料选择很重要。较佳地，所述射线滤过层14的材料可以为光纤面板(Fiber Optic Plates，简称FOP)，具有传光效率高、级间耦合损失小、传像清晰、真实、在光学上具有零厚度等优点。
作为示例，所述透明衬底13包括PI(Polyimide，聚酰亚胺)材料层、超薄玻璃和PET(Polyethylene terephthalate，聚酯)材料层中的一种或多种的结合，其厚度可以为10μm～20μm。
本发明提供的双能辐射平板探测器仅使用单层光电传感器阵列便可以以同时获取低能和高能的双能谱物体图像，相较于传统的双能辐射平板探测器，其结构极大简化，体积可以极大减小，这使得其不仅可以应用于常规的作业环境，还可以适用于各类需移动作业的工作场合，比如战地医院，移动安检站等。故而本发明还提供一种探测***，所述探测***包括如上述任一方案中所述的双能辐射平板探测器，对所述双能辐射平板探测器的介绍还请参考前述内容，出于简洁的目的不赘述。当然，所述探测***还包括图像处理装置等结构，由于探测***的结构及原理为本领域技术人员所熟知，对此不做详细展开。基于本发明的双能辐射平板探测器的探测***，***结构可以极大简化、体积可以极大缩小，可以有效降低***成本，提高***的适用性。
本发明还提供一种双能辐射平板探测器的制备方法，本发明的制备方法可以用于制备如上述任一方案中所述的双能辐射平板探测器，或者说前述任一方案中所述的双能辐射平板探测器可以基于该制备方法制备而成(当然也可以基于其他方法制备)，故前述对所述双能辐射平板探测器的介绍可以全文引用至此，出于简洁的目的不赘述。所述制备方法包括步骤：
在透明衬底的上表面依次形成光电传感器阵列层和第一闪烁体层，所述光电传感器阵列 层包括交替分布的第一感光像素及第二感光像素，第一感光像素和第二感光像素具有相反的感光方向以分别用于实现低能X射线成像和高能X射线成像；比如可以基于常规的半导体制造工艺在透明衬底上一步步形成相应的薄膜结构以形成包括相应的TFT薄膜晶体管和光电二极管的第一感光像素和第二感光像素以形成所述光电传感器阵列层，之后经真空蒸镀或直接贴合工艺形成所述第一闪烁体层，比如如果所述第一闪烁体层为C SI等材质，则可以在真空蒸镀炉内直接蒸镀而成，如果是GOS等材质，则可以先把第一闪烁体层做成一定厚度的膜层，之后用胶水或者胶膜贴合到所述光电传感器阵列层上；
在射线滤过层下表面集成第二闪烁体层，比如采用贴合工艺于射线滤过层的下表面形成所述第二闪烁体层，比如利用胶水或者胶膜将所述第二闪烁体层贴合到射线滤过层的下表面；
将射线滤过层的上表面与透明衬底的下表面耦合到一起，比如通过光学透明胶耦合，具体不做限制。由于高能像素和低能像素位于同一层，而无需考虑上下对位问题，因而制备工艺可以极大简化。
综上所述，本发明提供一种双能辐射平板探测器及其制备方法，以及一种探测***。所述双能辐射平板探测器沿X射线入射方向上依次包括第一闪烁体层、光电传感器阵列、透明衬底、射线滤过层及第二闪烁体层；其中，所述光电传感器阵列层包括交替分布的第一感光像素及第二感光像素，第一感光像素和第二感光像素具有相反的感光方向以分别用于实现低能X射线成像和高能X射线成像，所述射线滤过层用于过滤低能X射线和防止第二闪烁体层发光散射本发明经改善的结构设计，使用单层光电传感器阵列以同时获取低能和高能的双能谱物体图像，并通过射线滤过层过滤低能射线和防止第二闪烁体发光散射，从而有助于提高探测器的物质分辨能力，改善图像质量，提高诊断准确率。基于本发明的双能辐射平板探测器的探测***，结构极大简化，体积可以大大减小，不仅有助于降低***成本，同时增加***的移动便利性和灵活性，使得本发明的探测***适用范围更加广泛。所以，本发明有效克服了现有技术中的种种缺点而具高度产业利用价值。
上述实施例仅例示性说明本发明的原理及其功效，而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下，对上述实施例进行修饰或改变。因此，举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变，仍应由本发明的权利要求所涵盖。

Claims (8)

  1. 一种双能辐射平板探测器，其特征在于，所述双能辐射平板探测器沿X射线入射方向上依次包括第一闪烁体层、光电传感器阵列层、透明衬底、射线滤过层及第二闪烁体层；
    其中，所述光电传感器阵列层包括交替分布的第一感光像素及第二感光像素，第一感光像素和第二感光像素具有相反的感光方向以分别用于实现低能X射线成像和高能X射线成像，所述射线滤过层用于过滤低能X射线和防止第二闪烁体层发光散射。
  2. 根据权利要求1所述的双能辐射平板探测器，其特征在于，所述第二闪烁体层的厚度大于所述第一闪烁体层的厚度。
  3. 根据权利要求1所述的双能辐射平板探测器，其特征在于，所述射线滤过层包括光纤面板。
  4. 根据权利要求1所述的双能辐射平板探测器，其特征在于，所述透明衬底包括PI材料层、超薄玻璃和PET材料层中的一种或多种的结合。
  5. 根据权利要求1所述的双能辐射平板探测器，其特征在于，所述第一感光像素及第二感光像素呈多行多列交替阵列排布。
  6. 根据权利要求1-5任一项所述的双能辐射平板探测器，其特征在于，所述第一感光像素包括顶电极透明而底电极不透明的光电二极管而第二感光像素包括底电极透明而顶电极不透明的光电二极管。
  7. 一种双能辐射平板探测器的制备方法，其特征在于，包括步骤：
    在透明衬底的上表面依次形成光电传感器阵列层和第一闪烁体层，所述光电传感器阵列层包括交替分布的第一感光像素及第二感光像素，第一感光像素和第二感光像素具有相反的感光方向以分别用于实现低能X射线成像和高能X射线成像；
    在射线滤过层下表面集成第二闪烁体层；
    将射线滤过层的上表面与透明衬底的下表面耦合到一起。
  8. 一种探测***，其特征在于，所述探测***包括如权利要求1-6任一项所述的双能辐射平板探测器。
PCT/CN2021/115945 2020-12-30 2021-09-01 双能辐射平板探测器、制备方法及探测*** WO2022142431A1 (zh)

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