WO2022112233A1 - Switching device and method for producing a switching device - Google Patents
Switching device and method for producing a switching device Download PDFInfo
- Publication number
- WO2022112233A1 WO2022112233A1 PCT/EP2021/082651 EP2021082651W WO2022112233A1 WO 2022112233 A1 WO2022112233 A1 WO 2022112233A1 EP 2021082651 W EP2021082651 W EP 2021082651W WO 2022112233 A1 WO2022112233 A1 WO 2022112233A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- busbar
- switching device
- semiconductor switch
- surface connector
- connector
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 125
- 238000005266 casting Methods 0.000 claims description 30
- 150000001875 compounds Chemical class 0.000 claims description 25
- 238000005476 soldering Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 description 19
- WWTBZEKOSBFBEM-SPWPXUSOSA-N (2s)-2-[[2-benzyl-3-[hydroxy-[(1r)-2-phenyl-1-(phenylmethoxycarbonylamino)ethyl]phosphoryl]propanoyl]amino]-3-(1h-indol-3-yl)propanoic acid Chemical compound N([C@@H](CC=1C2=CC=CC=C2NC=1)C(=O)O)C(=O)C(CP(O)(=O)[C@H](CC=1C=CC=CC=1)NC(=O)OCC=1C=CC=CC=1)CC1=CC=CC=C1 WWTBZEKOSBFBEM-SPWPXUSOSA-N 0.000 description 15
- 229940126208 compound 22 Drugs 0.000 description 15
- 210000004027 cell Anatomy 0.000 description 7
- 238000001816 cooling Methods 0.000 description 5
- 238000004146 energy storage Methods 0.000 description 5
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- IRBAWVGZNJIROV-SFHVURJKSA-N 9-(2-cyclopropylethynyl)-2-[[(2s)-1,4-dioxan-2-yl]methoxy]-6,7-dihydropyrimido[6,1-a]isoquinolin-4-one Chemical compound C1=C2C3=CC=C(C#CC4CC4)C=C3CCN2C(=O)N=C1OC[C@@H]1COCCO1 IRBAWVGZNJIROV-SFHVURJKSA-N 0.000 description 4
- 210000000352 storage cell Anatomy 0.000 description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000012983 electrochemical energy storage Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- JDZCKJOXGCMJGS-UHFFFAOYSA-N [Li].[S] Chemical compound [Li].[S] JDZCKJOXGCMJGS-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052987 metal hydride Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- -1 nickel metal hydride Chemical class 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
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- H01L2924/0001—Technical content checked by a classifier
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Definitions
- the present invention relates to a switching device, an electrical energy store, a device and a method for producing a switching device.
- DE 11 2008001 657 T5 discloses an integrated power component housing and module with two-sided cooling and a method for producing the same.
- WO 2004/006423 A2 discloses a control and power module of an integrated starter/alternator.
- DE 694 15 252 T2 shows a high-performance semiconductor switching module.
- the core of the invention in the switching device in particular for an electrical energy store, having a first busbar on which at least one first semiconductor switch is arranged, and a second busbar on which at least one second semiconductor switch is arranged, is that between the first busbar and the second busbar at least one surface connector is arranged, which electrically conductively connects an electrode of the first semiconductor switch to an electrode of the second semiconductor switch.
- the background to the invention is that the switching device can be designed to be compact.
- the electrical resistance can be reduced by means of the surface connector due to the increased contact area between the electrodes in comparison to a wire connector. As a result, heating of the switching device can be reduced and the current carrying capacity of the switching device is improved.
- the respective electrode is advantageously a source electrode or a drain electrode of the respective semiconductor switch.
- the surface connector connects the first semiconductor switch and the second semiconductor switch mechanically, in particular cohesively, in particular soldering material being arranged between a surface of the surface connector and a surface of the first semiconductor switch and/or a surface of the second semiconductor switch. This enables a secure mechanical connection of the semiconductor switches.
- the first semiconductor switch and the second semiconductor switch are designed as MOSFET switches, in particular with the surface connector electrically conductively connecting a first source electrode of the first semiconductor switch to a second source electrode of the second semiconductor switch.
- the switching device can be made compact and the number of wire connectors can be reduced, so that heat dissipation is improved.
- the surface connector has a connection section, in particular the connection section protruding laterally or centrally from the surface connector.
- the surface connector acts as an electrically conductive connection between the source connectors and as a contact for the source connectors, so that the switching device can be made compact.
- the respective source connector can advantageously be connected to a resistor and/or a capacitance and/or a sensor and/or a cooling device by means of the surface connector.
- the surface connector has a first section and a second section, which are arranged in the switching device when folded, in particular the first section being electrically conductively connected to the first semiconductor switch and the second section being electrically conductively connected to the second semiconductor switch.
- the advantage here is that the busbars can be aligned with one another by means of the surface connector and can be arranged in a compact manner by folding them together.
- the switching device has a second surface connector, the surface connector being arranged on the first semiconductor switch and the second surface connector being arranged on the second semiconductor switch, the surface connector and the second surface connector electrically conducting the first semiconductor switch and the second semiconductor switch to one another connect, in particular wherein the surface connector and the second surface connector mechanically connect the first semiconductor switch and the second semiconductor switch to one another.
- the surface connector advantageously functions as the first surface connector.
- the thickness of the surface connector is less than 2 mm. As a result, the surface connector can be bent or folded more easily, in particular for contacting.
- the second surface connector has a greater thickness than the surface connector.
- the second surface connector can be connected to a cooling device in a thermally conductive manner, with the heat dissipation of the switching device being improved.
- a plurality of rows of respective semiconductor switches can also be arranged on the respective busbar.
- the switching device has a casting compound, with the casting compound at least partially surrounding the first busbar, the second busbar, the first semiconductor switch, the second semiconductor switch and the surface connector.
- the components of the switching device can be at least partially encapsulated by means of the casting compound and can thus be protected from dirt and damage.
- the surface connector advantageously protrudes from the casting compound.
- the surface connector can be used as a heat sink.
- the surface connector can be thermally conductively connected to a cooling device.
- first busbar has a first recess and/or the second busbar has a second recess, with the first busbar and the second busbar being arranged opposite one another, in particular with the first recess and/or the second recess of the potting compound is spaced.
- the respective busbar can be connected to a further busbar in a simple manner by means of the respective recess.
- the respective recesses therefore function as connection means for the switching device.
- the core of the invention in the case of the electrical energy store having a switching device as described above or according to one of the claims relating to the switching device is that the switching device is designed as an electrical disconnecting device.
- the background to the invention is that the electrical energy store can be designed to be compact.
- the switching device can be integrated in a control unit of the electrical energy store, in particular can be integrated on a control circuit board of the electrical energy store.
- the core of the invention in the device, in particular the vehicle, is that the device has an electrical energy store as described above or according to one of the claims related to the electrical energy store.
- the background to the invention is that the safety of the device is improved by the improved current-carrying capacity of the electrical energy store.
- the core of the invention in the method for producing a switching device as described above or according to one of the claims relating to the switching device is that first the first semiconductor switches are connected to the first busbar and the second semiconductor switches are connected to the second busbar, after which a surface connector is electrically conductively and mechanically, in particular cohesively, connected to the first semiconductor switch and/or the second semiconductor switch, the first busbar then being mechanically, in particular cohesively, connected to the second busbar by means of the surface connector.
- the background to the invention is that the switching device can be designed to be compact.
- the electrical resistance can be reduced by means of the surface connector due to the increased contact area between the electrodes in comparison to a wire connector. As a result, heating of the switching device can be reduced and the current carrying capacity of the switching device is improved.
- the surface connector is folded together to connect the first busbar to the second busbar.
- the busbars can be aligned with one another by means of the surface connector and can be arranged in a compact manner by folding them together.
- FIG. 1 shows a first exemplary embodiment of a switching device 1 according to the invention in a perspective side view
- FIG. 2 shows the first exemplary embodiment of the switching device 1 according to the invention in a side view
- FIG. 4 shows a second exemplary embodiment of the switching device 101 according to the invention in a perspective side view
- 5 shows the second exemplary embodiment of the switching device 101 according to the invention in a partially transparent side view
- 6 shows a first busbar 6 of the switching device 201 after a first method step
- FIG. 9 shows a third exemplary embodiment of the switching device 201 according to the invention in a perspective side view
- Fig. 10 is a side view of the third embodiment of the switching device 201 according to the invention.
- FIG. 14 shows a side view of a fourth exemplary embodiment of the switching device 301 according to the invention.
- 17 shows a second busbar 16 of the switching device 301 after the second method step
- 18 shows a partially transparent perspective side view of a fifth
- Fig. 19 is a side view of the fifth embodiment of the switching device 401 according to the invention.
- the first exemplary embodiment of the switching device according to the invention shown in FIG. 1 and FIG. 2 has a first busbar 6, a second busbar 16 and semiconductor components 2a.
- the semiconductor components 2a are each arranged between the first busbar 6 and the second busbar 16 .
- 1 and 2 each show three semiconductor components 2a, but only one semiconductor component 2a, two semiconductor components 2a or more than three semiconductor components 2a can also be arranged between the busbars (6, 16).
- the first busbar 6 has a first recess 7 for connecting the first busbar 6 to a further busbar, for example.
- the second busbar 16 has a second recess 17 for connecting the second busbar 16 to an external busbar, for example.
- the first busbar 6 and the second busbar 16 preferably have the same shape.
- the busbars (6, 16) are each designed as copper busbars.
- a semiconductor module 2a is shown in detail in FIG.
- the semiconductor component 2a has a first semiconductor switch 2 and a second semiconductor switch 12 .
- the semiconductor switches (2, 12) are preferably designed as MOSFET switches.
- the semiconductor switches (2, 12) are each designed as a layer system which has at least two layers as electrodes.
- the semiconductor switches (2, 12) have no housing, so that the electrodes are arranged directly on the busbars (6, 16) and are connected to the busbars (6, 16) in an electrically conductive and materially bonded manner, for example by means of soldering compound.
- the first semiconductor switch 2 has a first source electrode (source) 4 , a first drain electrode (drain) 3 and a first control electrode (gate) 5 .
- the second semiconductor switch 12 has a second source electrode (source) 14 , a second drain electrode (drain) 13 and a second control electrode (gate) 15 .
- the semiconductor switches (2, 12) are arranged in such a way that the first source electrode 4 is electrically conductively connected to the second source electrode 14, in particular with the first source electrode 4 touching the second source electrode 14.
- the semiconductor switches (2, 12) are preferably arranged one on top of the other, so that the first source electrode 4 is arranged on the second source electrode 14.
- the first drain electrode 3 is electrically conductively connected to the first busbar 6 , in particular with the first drain electrode 3 touching the first busbar 6 .
- the second drain electrode 13 is electrically conductively connected to the second busbar 16 , in particular with the second drain electrode 13 touching the second busbar 16 .
- the semiconductor switches are arranged one on top of the other in such a way that the first drain electrode is arranged on the second drain electrode.
- the layers of the electrodes of the semiconductor device 2a are arranged in a stepwise manner.
- the first drain electrode 3 and the second drain electrode 13 each form a stage, and the first and second source electrodes (4, 14) together form a stage.
- the first control electrode 5 is arranged in the first source electrode 4 .
- the first control electrode 5 is arranged on a free surface of the first source electrode 4, so that the first control electrode 5 can be contacted.
- the second control electrode 15 is arranged in the second outflow electrode 13 .
- the second control electrode 15 is arranged on a free surface of the second outflow electrode 13, so that the second control electrode 15 can be contacted.
- the switching device 1 is partially encapsulated by means of an encapsulating compound that is not shown in FIGS.
- the semiconductor components (2a) are arranged completely within the casting compound.
- the first and second busbars (6, 16) are each partially arranged within the casting compound. An end area of the respective busbar (6, 16) extends out of the casting compound, so that the first and/or the second recess (7, 17) are at a distance from the casting compound.
- Contact surfaces for the semiconductor switches are partially arranged in the casting compound and can be contacted from the outside.
- the contact surfaces are electrically conductively connected to a respective semiconductor switch.
- the second exemplary embodiment of the switching device 101 according to the invention shown in FIGS. 4 and 5 has a first busbar 6, a second busbar 16, first semiconductor switches 2, second semiconductor switches 12, a potting compound 22, a first potting compound 122, a second potting compound, surface connectors 123, connection connectors 120 and wire connector 121 on.
- first semiconductor switches 2 are arranged in series next to one another on first busbar 6 .
- the respective first discharge electrode 3 is connected to the first busbar 6 in a materially bonded and electrically conductive manner, in particular by means of a soldering compound.
- Each connection connector 120 is arranged next to the first busbar 6 and is electrically conductively connected to a respective first control electrode 5 by means of a respective wire connector 121 .
- a first connection connector 120 is electrically conductively connected to the first busbar 6 .
- the semiconductor switches (2, 12) are each designed in the shape of a cuboid.
- Each drain electrode (3, 13) forms an essentially square base area of the respective semiconductor switch (2, 12) on which a respective source electrode (4, 14) and a respective control electrode (5, 15) are arranged next to one another.
- the respective source electrode (4, 14) is larger than the respective control electrode (5, 15), in particular more than five times as large.
- connection connectors 120 are materially connected to the first busbar 6 by means of the further casting compound 122 .
- the further casting compound 122 extends along a longitudinal direction of the first busbar 6 laterally on the first busbar 6.
- a further press-in pin 125 is arranged on each connection connector 120.
- the second semiconductor switches 12, terminal connectors 120, wire connectors 121 and the second potting compound are arranged on the second busbar 16 in the same way as shown in FIGS. 6 and 7 and as described above for the first busbar 6.
- a surface connector 123 is shown in detail in FIG.
- the surface connector 123 has a length that is greater than the width of the first busbar 6 or the second busbar 16.
- the width of the surface connector 123 is approximately as large as the width of a first or second semiconductor switch (2,
- a press-in pin 124 is arranged on a narrow end of the surface connector 123 , in particular which is pressed into the surface connector 123 .
- the surface connector 123 and the press-in pin 124 are designed to be electrically conductive, preferably made of metal, in particular copper.
- the surface connectors 123 are arranged in the switching device 101 between the first busbar 6 and the second busbar 16 such that a respective surface connector 123 electrically conductively connects a respective first source electrode 4 and a respective second source electrode 14 .
- the surface connector 123 is materially connected to the respective source electrode (4, 14), in particular by means of a soldering compound.
- the busbars (6, 16) are at least partially encased by the casting compound 22. In this case, the semiconductor switches ( 2 , 12 ) are arranged completely within the casting compound 22 .
- the conductor rails (6, 16) protrude laterally from the casting compound 22 opposite one another.
- connection connectors 120 and the press-in pins 124 protrude from the casting compound 22 on a longitudinal side of the switching device 101 .
- the surface connectors 123 protrude from the casting compound 22 on an opposite longitudinal side. As a result, the surface connectors 123 protruding from the casting compound 22 can be connected to a cooling device.
- a single surface connector could be arranged between the first busbar 6 and the second busbar 16, which electrically conductively connects all the first and second source electrodes (4, 14) to one another.
- the first semiconductor switches 2 are arranged on the first busbar 6 and connected to the first busbar 6 in a materially bonded manner in a first method step.
- the connection connectors 120 are arranged next to the first busbar 6 and are each electrically conductively connected to a respective first control electrode 5 by means of a respective wire connector 121 .
- the first busbar 6 and the connection connectors 120 are stamped out of a pressed screen before the first semiconductor switches 2 are connected to the first busbar 6 .
- connection connectors 120 are materially connected to the first busbar 6 by means of the first casting compound 122 .
- the second busbar 16 is connected to the second semiconductor switches 12 and respective terminal connectors 120 in the same way.
- the surface connectors 123 are then arranged between the first and second busbars (6, 16) and the busbars (6, 16) are at least partially overmoulded with the casting compound 22.
- a first surface connector 223 is arranged on a first semiconductor switch 2 and a second surface connector 233 is arranged on a second semiconductor switch 12.
- the respective first surface connector 223 is electrically conductive and materially connected to the respective first semiconductor switch 2 , in particular a first source electrode 4 .
- the respective second surface connector 233 is electrically conductive and cohesively connected to the respective second semiconductor switch 12, in particular a second source electrode 14.
- the first and second surface connectors (223, 233) have a width equal to the width of the first and second semiconductor switches (2, 12), respectively.
- the length of the surface connectors (223, 233) is greater than a width of the first or second busbar (6, 16).
- Each first surface connector 223 has a connection section for electrical contacting, the connection section in each case extending laterally from the first semiconductor switch 2.
- the first surface connectors 223 are preferably thinner than the second surface connectors 233, in particular the first surface connectors 223 being thinner than 2 mm.
- first and second surface connectors (223, 233) can also have an identical shape.
- the first surface connectors 223 and the second surface connectors 233 are arranged in the switching device 201 between the first and second busbars (6, 16).
- a first surface connector 223 is electrically conductively and cohesively connected to a second surface connector 233, in particular soldering compound being arranged between the respective first surface connector 223 and the respective second surface connector 233 .
- the busbars (6, 16) are at least partially encased by the casting compound 22.
- the semiconductor switches ( 2 , 12 ) are arranged completely within the casting compound 22 .
- the conductor rails (6, 16) protrude laterally from the casting compound 22 opposite one another.
- the connection connectors 120 and the connection sections of the first surface connectors 223 protrude from the casting compound 22 on a longitudinal side of the switching device 101 .
- the first and second surface connectors (223, 233) connected to one another protrude from the casting compound 22 on an opposite longitudinal side.
- the first semiconductor switches 2 are arranged on the first busbar 6 and connected to the first busbar 6 in a materially bonded manner in a first method step.
- the connection connectors 220 are arranged next to the first busbar 6 and are each electrically conductively connected to a respective first control electrode 5 by means of a respective wire connector.
- the first busbar 6 and the connection connectors 120 are stamped out of a pressed screen before the first semiconductor switches 2 are connected to the first busbar 6 .
- the second semiconductor switches 12 are arranged on the second busbar 16 and are materially connected to the second busbar 16 .
- connection connectors 220 are arranged next to the second busbar 16 and are each electrically conductively connected to a respective second control electrode 15 by means of a respective wire connector.
- the second busbar 16 and the terminal connectors 120 are stamped out of a pressed screen before the second semiconductor switches 12 are connected to the second busbar 16 .
- the first surface connectors 223 are arranged on the first semiconductor switches 2 and are electrically conductively and cohesively connected to the first semiconductor switches 2 .
- the second area connectors 233 are arranged on the second semiconductor switches 12 and are electrically conductively and cohesively connected to the second semiconductor switches 12 .
- the first busbar 6 and the second busbar 16 are connected to one another.
- the first surface connectors 223 are electrically conductively and cohesively connected to the second surface connectors 233 .
- soldering compound is preferably applied to the first and/or second surface connectors (223, 233) before the third method step.
- busbars (6, 16) are at least partially encapsulated with the casting compound 22.
- the fourth exemplary embodiment of the switching device 301 according to the invention is shown in FIG.
- the fourth exemplary embodiment of the switching device 301 according to the invention differs from the third exemplary embodiment of the switching device 201 according to the invention essentially in the shape of the first surface connector 323.
- the first area connectors 323 and second area connectors 333 have a width that is slightly narrower than the width of the first and second semiconductor switches (2, 12) respectively, so that the respective control electrodes (5, 15) next to the respective area connectors (323, 333) are electrically conductively connected to the respective terminal connector 320 by means of a wire connector 321 .
- a connection section of the respective first surface connector 323 is arranged centrally on a short side of the first surface connector 323 .
- Fig. 18, 19 and 20 the fifth embodiment of the switching device 401 according to the invention is shown.
- the fifth exemplary embodiment of the switching device 401 according to the invention differs essentially from the third exemplary embodiment of the switching device 201 according to the invention in that a first and a second surface connector are designed in one piece as a surface connector 423 .
- the surface connector 423 is designed to be foldable, with the surface connector 423 being foldable along a line that divides the surface connector 423 into two sections, the respective shape of which corresponds to a first and a second surface connector (223, 233) of the switching device according to the third exemplary embodiment.
- the surface connector 423 is thinner than 2 mm.
- the surface connectors 423 are arranged folded up in the switching device 401 between the first and second busbars (6, 16). In this case, a first section of the surface connector 423 is electrically conductively and cohesively connected to a second section of the respective surface connector 423 , in particular soldering material being arranged between the sections of the respective surface connector 423 .
- the first semiconductor switches 2 are arranged on the first busbar 6 and connected to the first busbar 6 in a materially bonded manner in a first method step.
- Connection connectors 420 are arranged next to the first busbar 6 and are electrically conductively connected to a respective first control electrode by means of a respective wire connector.
- the second semiconductor switches 12 are arranged on the second busbar 16 and are materially connected to the second busbar 16 .
- Connection connectors 420 are arranged next to the second busbar 16 and are electrically conductively connected to a respective second control electrode by means of a respective wire connector.
- the busbars (6, 16) are then arranged next to one another opposite one another and a surface connector 423 is arranged on a first semiconductor switch 2 and a second semiconductor switch 12 and is electrically conductively and cohesively connected to the respective semiconductor switches (2, 12), in particular connected by means of soldering compound .
- a surface connector 423 connects a first semiconductor switch 2 to a second semiconductor switch 12 in an electrically conductive manner.
- first busbar 6, the second busbar 16 and the connection connector 420 are punched out of a stamped grid before the first Semiconductor switches 2 are connected to the first busbar 6 and the second semiconductor switches are connected to the second busbar 16 .
- soldering compound is preferably applied to the first and/or second section of the surface connector 423 before the second method step.
- busbars (6, 16) are then at least partially encapsulated with the casting compound 22 and/or cast.
- An electrical energy store is understood to mean a rechargeable energy store, in particular having an electrochemical energy storage cell and/or an energy storage module having at least one electrochemical energy storage cell and/or an energy storage pack having at least one energy storage module.
- the energy storage cell can be designed as a lithium-based battery cell, in particular a lithium-ion battery cell.
- the energy storage cell is designed as a lithium polymer battery cell or nickel metal hydride battery cell or lead acid battery cell or lithium air battery cell or lithium sulfur battery cell.
- a vehicle is understood to mean an at least partially electrically driven vehicle, in particular a land vehicle, for example a passenger car or a truck or a two-wheeler.
- the vehicle is, for example, a battery-electric vehicle that has a purely electric drive, or a hybrid vehicle that has an electric drive and an internal combustion engine.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Details Of Connecting Devices For Male And Female Coupling (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention relates to a switching device (301), in particular for an electrical energy store, comprising a first busbar (6) on which at least a first semiconductor switch (2) is located, and a second busbar (16) on which at least a second semiconductor switch (12) is located, wherein, between the first busbar (6) and the second busbar (16), at least one surface connector (323, 333) is located which electrically conductively connects an electrode (5) of the first semiconductor switch (2) to an electrode (5) of the second semiconductor switch (15).
Description
Beschreibung description
Titel title
SCHALTVORRICHTUNG UND VERFAHREN ZUM HERSTELLEN EINER SCHALTVORRICHTUNG SWITCHING DEVICE AND METHOD OF MAKING A SWITCHING DEVICE
Feld der Erfindung field of invention
Die vorliegende Erfindung bezieht sich auf eine Schaltvorrichtung, einen elektrischen Energiespeicher, eine Vorrichtung und ein Verfahren zum Herstellen einer Schaltvorrichtung. The present invention relates to a switching device, an electrical energy store, a device and a method for producing a switching device.
Stand der Technik State of the art
Die DE 11 2008001 657 T5 offenbart ein integriertes Leistungsbauelementgehäuse und Modul mit zweiseitiger Kühlung und ein Verfahren zur Herstellung desselben. DE 11 2008001 657 T5 discloses an integrated power component housing and module with two-sided cooling and a method for producing the same.
Die WO 2004/006423 A2 offenbart ein Steuer- und Leistungsmodul einer integrierten Anlasser-Lichtmaschine. WO 2004/006423 A2 discloses a control and power module of an integrated starter/alternator.
Die DE 694 15 252 T2 zeigt ein Hochleistungs-Halbleiter-Schaltmodul. DE 694 15 252 T2 shows a high-performance semiconductor switching module.
Offenbarung der Erfindung Disclosure of Invention
Der Kern der Erfindung bei der Schaltvorrichtung, insbesondere für einen elektrischen Energiespeicher, aufweisend eine erste Stromschiene, auf der zumindest ein erster Halbleiterschalter angeordnet ist, und eine zweite Stromschiene, auf der zumindest ein zweiter Halbleiterschalter angeordnet ist, besteht darin, dass zwischen der ersten Stromschiene und der zweiten Stromschiene zumindest ein Flächenverbinder
angeordnet ist, der eine Elektrode des ersten Halbleiterschalters mit einer Elektrode des zweiten Halbleiterschalters elektrisch leitend verbindet. The core of the invention in the switching device, in particular for an electrical energy store, having a first busbar on which at least one first semiconductor switch is arranged, and a second busbar on which at least one second semiconductor switch is arranged, is that between the first busbar and the second busbar at least one surface connector is arranged, which electrically conductively connects an electrode of the first semiconductor switch to an electrode of the second semiconductor switch.
Hintergrund der Erfindung ist, dass die Schaltvorrichtung kompakt ausführbar ist. Außerdem ist der elektrische Widerstand durch die vergrößerte Kontaktfläche zwischen den Elektroden mittels des Flächenverbinders reduzierbar im Vergleich zu einem Drahtverbinder. Dadurch ist eine Erwärmung der Schaltvorrichtung reduzierbar und die Stromfestigkeit der Schaltvorrichtung ist verbessert. The background to the invention is that the switching device can be designed to be compact. In addition, the electrical resistance can be reduced by means of the surface connector due to the increased contact area between the electrodes in comparison to a wire connector. As a result, heating of the switching device can be reduced and the current carrying capacity of the switching device is improved.
Vorteilhafterweise ist die jeweilige Elektrode eine Quellelektrode oder eine Abflusselektrode des jeweiligen Halbleiterschalters. The respective electrode is advantageously a source electrode or a drain electrode of the respective semiconductor switch.
Weitere vorteilhafte Ausführungsformen der vorliegenden Erfindung sind Gegenstand der Unteransprüche. Further advantageous embodiments of the present invention are the subject matter of the dependent claims.
Gemäß einer vorteilhaften Ausgestaltung verbindet der Flächenverbinder den ersten Halbleiterschalter und den zweiten Halbleiterschalter mechanisch, insbesondere stoffschlüssig, insbesondere wobei Lotmasse zwischen einer Oberfläche des Flächenverbinders und einer Oberfläche des ersten Halbleiterschalters und/oder einer Oberfläche des zweiten Halbleiterschalters angeordnet ist. Dadurch ist eine sichere mechanische Verbindung der Halbleiterschalter ermöglicht. According to an advantageous embodiment, the surface connector connects the first semiconductor switch and the second semiconductor switch mechanically, in particular cohesively, in particular soldering material being arranged between a surface of the surface connector and a surface of the first semiconductor switch and/or a surface of the second semiconductor switch. This enables a secure mechanical connection of the semiconductor switches.
Von Vorteil ist es dabei, wenn die ersten Halbleiterschalter und die zweiten Halbleiterschalter als MOSFET-Schalter ausgeführt sind, insbesondere wobei der Flächenverbinder eine erste Quellelektrode des ersten Halbleiterschalters mit einer zweiten Quellelektrode des zweiten Halbleiterschalters elektrisch leitend verbindet. Somit ist die Schaltvorrichtung kompakt ausführbar und die Zahl der Drahtverbinder ist reduzierbar, so dass die Wärmeabführung verbessert ist. It is advantageous if the first semiconductor switch and the second semiconductor switch are designed as MOSFET switches, in particular with the surface connector electrically conductively connecting a first source electrode of the first semiconductor switch to a second source electrode of the second semiconductor switch. Thus, the switching device can be made compact and the number of wire connectors can be reduced, so that heat dissipation is improved.
Weiterhin ist es von Vorteil, wenn der Flächenverbinder einen Anschlussabschnitt aufweist, insbesondere wobei der Anschlussabschnitt seitlich oder zentriert aus dem Flächenverbinder auskragt. Dadurch fungiert der Flächenverbinder als elektrisch leitende Verbindung zwischen den Quellverbindern und als Kontakt für die Quellverbinder, so dass die Schaltvorrichtung kompakt ausführbar ist.
Vorteilhafterweise ist der jeweilige Quellverbinder mittels des Flächenverbinders mit einem Widerstand und/oder einer Kapazität und/oder einem Sensor und/oder einem Kühlvorrichtung verbindbar. Furthermore, it is advantageous if the surface connector has a connection section, in particular the connection section protruding laterally or centrally from the surface connector. As a result, the surface connector acts as an electrically conductive connection between the source connectors and as a contact for the source connectors, so that the switching device can be made compact. The respective source connector can advantageously be connected to a resistor and/or a capacitance and/or a sensor and/or a cooling device by means of the surface connector.
Gemäß einer vorteilhaften Ausgestaltung weist der Flächenverbinder einen ersten Abschnitt und einen zweiten Abschnitt auf, die zusammengeklappt in der Schaltvorrichtung angeordnet sind, insbesondere wobei der erste Abschnitt mit dem ersten Halbleiterschalter elektrisch leitend verbunden ist und der zweite Abschnitt mit dem zweiten Halbleiterschalter elektrisch leitend verbunden ist. Von Vorteil ist dabei, dass die Stromschienen mittels des Flächenverbinders zueinander ausrichtbar sind und mittels Zusammenklappen kompakt anordenbar sind. According to an advantageous embodiment, the surface connector has a first section and a second section, which are arranged in the switching device when folded, in particular the first section being electrically conductively connected to the first semiconductor switch and the second section being electrically conductively connected to the second semiconductor switch. The advantage here is that the busbars can be aligned with one another by means of the surface connector and can be arranged in a compact manner by folding them together.
Gemäß einer weiteren vorteilhaften Ausgestaltung weist die Schaltvorrichtung einen zweiten Flächenverbinder auf, wobei der Flächenverbinder auf dem ersten Halbleiterschalter angeordnet ist und der zweite Flächenverbinder auf dem zweiten Halbleiterschalter angeordnet ist, wobei der Flächenverbinder und der zweite Flächenverbinder den ersten Halbleiterschalter und den zweiten Halbleiterschalter elektrisch leitend miteinander verbinden, insbesondere wobei der Flächenverbinder und der zweite Flächenverbinder den ersten Halbleiterschalter und den zweiten Halbleiterschalter mechanisch miteinander verbinden. Vorteilhaftweise fungiert der Flächenverbinder als erster Flächenverbinder. Von Vorteil ist dabei, dass die Stromschienen vor dem Verbinden mit jeweils einem Flächenverbinder verbindbar sind, so dass die Halbleiterschalter beim Verbinden durch die Flächenverbinder geschützt sind. According to a further advantageous configuration, the switching device has a second surface connector, the surface connector being arranged on the first semiconductor switch and the second surface connector being arranged on the second semiconductor switch, the surface connector and the second surface connector electrically conducting the first semiconductor switch and the second semiconductor switch to one another connect, in particular wherein the surface connector and the second surface connector mechanically connect the first semiconductor switch and the second semiconductor switch to one another. The surface connector advantageously functions as the first surface connector. The advantage here is that the busbars can each be connected to a surface connector before they are connected, so that the semiconductor switches are protected by the surface connector when they are connected.
Von Vorteil ist es dabei, wenn die Dicke des Flächenverbinders kleiner ist als 2 mm. Dadurch kann der Flächenverbinder leichter gebogen oder geklappt werden, insbesondere zur Kontaktierung. It is advantageous if the thickness of the surface connector is less than 2 mm. As a result, the surface connector can be bent or folded more easily, in particular for contacting.
Vorteilhafterweise weist der zweite Flächenverbinder eine größere Dicke auf als der Flächenverbinder. Dabei ist der zweite Flächenverbinder mit einer Kühlvorrichtung wärmeleitend verbindbar, wobei die Wärmeableitung der Schaltvorrichtung verbessert ist.
Weiterhin ist es von Vorteil, wenn mehrere erste Halbleiterschalter nebeneinander auf der ersten Stromschiene angeordnet sind und mehrere zweite Halbleiterschalter nebeneinander auf der zweiten Stromschiene angeordnet sind. Dadurch sind die Halbleiterschalter in einfacher Art und Weise seitlich kontaktierbar. Advantageously, the second surface connector has a greater thickness than the surface connector. In this case, the second surface connector can be connected to a cooling device in a thermally conductive manner, with the heat dissipation of the switching device being improved. Furthermore, it is advantageous if a plurality of first semiconductor switches are arranged next to one another on the first busbar and a plurality of second semiconductor switches are arranged next to one another on the second busbar. As a result, the semiconductor switches can be contacted laterally in a simple manner.
Alternativ können auch mehrere Reihen von jeweiligen Halbleiterschaltern auf der jeweiligen Stromschiene angeordnet sein. Alternatively, a plurality of rows of respective semiconductor switches can also be arranged on the respective busbar.
Außerdem ist es von Vorteil, wenn die Schaltvorrichtung eine Vergussmasse aufweist, wobei die Vergussmasse die erste Stromschiene, die zweite Stromschiene, den ersten Halbleiterschalter, den zweiten Halbleiterschalter und den Flächenverbinder zumindest teilweise umgibt. Mittels der Vergussmasse können die Bauteile der Schaltvorrichtung zumindest teilweise eingekapselt werden und somit vor Verschmutzungen und Beschädigungen geschützt werden. It is also advantageous if the switching device has a casting compound, with the casting compound at least partially surrounding the first busbar, the second busbar, the first semiconductor switch, the second semiconductor switch and the surface connector. The components of the switching device can be at least partially encapsulated by means of the casting compound and can thus be protected from dirt and damage.
Vorteilhafterweise kragt der Flächenverbinder aus der Vergussmasse aus. Dadurch ist der Flächenverbinder als Wärmeableiter verwendbar. Vorteilhafterweise ist der Flächenverbinder mit einer Kühlvorrichtung wärmeleitend verbindbar. The surface connector advantageously protrudes from the casting compound. As a result, the surface connector can be used as a heat sink. Advantageously, the surface connector can be thermally conductively connected to a cooling device.
Dabei ist es von Vorteil, wenn die erste Stromschiene eine erste Ausnehmung aufweist und/oder die zweite Stromschiene eine zweite Ausnehmung aufweist, wobei die erste Stromschiene und die zweite Stromschiene entgegengesetzt zueinander angeordnet sind, insbesondere wobei die erste Ausnehmung und/oder die zweite Ausnehmung von der Vergussmasse beabstandet ist. Mittels der jeweiligen Ausnehmung kann die jeweilige Stromschiene in einfacher Art und Weise mit einer weiteren Stromschiene verbunden werden. Die jeweiligen Ausnehmungen fungieren also als Anschlussmittel für die Schaltvorrichtung. It is advantageous if the first busbar has a first recess and/or the second busbar has a second recess, with the first busbar and the second busbar being arranged opposite one another, in particular with the first recess and/or the second recess of the potting compound is spaced. The respective busbar can be connected to a further busbar in a simple manner by means of the respective recess. The respective recesses therefore function as connection means for the switching device.
Der Kern der Erfindung bei dem elektrischen Energiespeicher aufweisend eine Schaltvorrichtung wie zuvor beschrieben beziehungsweise nach einem der auf die Schaltvorrichtung bezogenen Ansprüche, besteht darin, dass die Schaltvorrichtung als elektrische Trennvorrichtung ausgeführt ist.
Hintergrund der Erfindung ist, dass der elektrische Energiespeicher kompakt ausführbar ist. Vorteilhafterweise ist die Schaltvorrichtung in einer Steuereinheit des elektrischen Energiespeichers integrierbar, insbesondere auf einer Steuerplatine des elektrischen Energiespeichers integrierbar. The core of the invention in the case of the electrical energy store having a switching device as described above or according to one of the claims relating to the switching device is that the switching device is designed as an electrical disconnecting device. The background to the invention is that the electrical energy store can be designed to be compact. Advantageously, the switching device can be integrated in a control unit of the electrical energy store, in particular can be integrated on a control circuit board of the electrical energy store.
Zusätzlich ist die Stromfestigkeit des elektrischen Energiespeichers verbessert. In addition, the current resistance of the electrical energy store is improved.
Der Kern der Erfindung bei der Vorrichtung, insbesondere Fahrzeug, besteht darin, dass die Vorrichtung einen elektrischen Energiespeicher wie zuvor beschrieben beziehungsweise nach einem der auf den elektrischen Energiespeicher bezogenen Ansprüche aufweist. The core of the invention in the device, in particular the vehicle, is that the device has an electrical energy store as described above or according to one of the claims related to the electrical energy store.
Hintergrund der Erfindung ist, dass die Sicherheit der Vorrichtung durch die verbesserte Stromfestigkeit des elektrischen Energiespeichers verbessert ist. The background to the invention is that the safety of the device is improved by the improved current-carrying capacity of the electrical energy store.
Der Kern der Erfindung bei dem Verfahren zum Herstellen einer Schaltvorrichtung wie zuvor beschrieben beziehungsweise nach einem der auf die Schaltvorrichtung bezogenen Ansprüche besteht darin, dass zuerst die ersten Halbleiterschalter mit der ersten Stromschiene verbunden werden und die zweiten Halbleiterschalter mit der zweiten Stromschiene verbunden werden, wobei danach ein Flächenverbinder mit dem ersten Halbleiterschalter und/oder dem zweiten Halbleiterschalter elektrisch leitend und mechanisch, insbesondere stoffschlüssig, verbunden wird, wobei anschließend die erste Stromschiene mittels des Flächenverbinders mechanisch, insbesondere stoffschlüssig, mit der zweiten Stromschiene verbunden wird. The core of the invention in the method for producing a switching device as described above or according to one of the claims relating to the switching device is that first the first semiconductor switches are connected to the first busbar and the second semiconductor switches are connected to the second busbar, after which a surface connector is electrically conductively and mechanically, in particular cohesively, connected to the first semiconductor switch and/or the second semiconductor switch, the first busbar then being mechanically, in particular cohesively, connected to the second busbar by means of the surface connector.
Hintergrund der Erfindung ist, dass die Schaltvorrichtung kompakt ausführbar ist. Außerdem ist der elektrische Widerstand durch die vergrößerte Kontaktfläche zwischen den Elektroden mittels des Flächenverbinders reduzierbar im Vergleich zu einem Drahtverbinder. Dadurch ist eine Erwärmung der Schaltvorrichtung reduzierbar und die Stromfestigkeit der Schaltvorrichtung ist verbessert. The background to the invention is that the switching device can be designed to be compact. In addition, the electrical resistance can be reduced by means of the surface connector due to the increased contact area between the electrodes in comparison to a wire connector. As a result, heating of the switching device can be reduced and the current carrying capacity of the switching device is improved.
Gemäß einer vorteilhaften Ausgestaltung wird der Flächenverbinder zum Verbinden der ersten Stromschiene mit der zweiten Stromschiene zusammengeklappt. Von
Vorteil ist dabei, dass die Stromschienen mittels des Flächenverbinders zueinander ausrichtbar sind und mittels Zusammenklappen kompakt anordenbar sind. According to an advantageous embodiment, the surface connector is folded together to connect the first busbar to the second busbar. Of The advantage here is that the busbars can be aligned with one another by means of the surface connector and can be arranged in a compact manner by folding them together.
Die obigen Ausgestaltungen und Weiterbildungen lassen sich, sofern sinnvoll, beliebig miteinander kombinieren. Weitere mögliche Ausgestaltungen, Weiterbildungen und Implementierungen der Erfindung umfassen auch nicht explizit genannte Kombinationen von zuvor oder im Folgenden bezüglich der Ausführungsbeispiele beschriebenen Merkmalen der Erfindung. Insbesondere wird dabei der Fachmann auch Einzelaspekte als Verbesserungen oder Ergänzungen zu der jeweiligen Grundform der vorliegenden Erfindung hinzufügen. The above configurations and developments can be combined with one another as desired, insofar as this makes sense. Further possible refinements, developments and implementations of the invention also include combinations of features of the invention described above or below with regard to the exemplary embodiments that are not explicitly mentioned. In particular, the person skilled in the art will also add individual aspects as improvements or additions to the respective basic form of the present invention.
Kurze Beschreibung der Zeichnungen Brief description of the drawings
Im folgenden Abschnitt wird die Erfindung anhand von Ausführungsbeispielen, aus denen sich weitere erfinderische Merkmale ergeben können, auf die die Erfindung aber in ihrem Umfang nicht beschränkt ist, erläutert. Die Ausführungsbeispiele sind in den Zeichnungen dargestellt. In the following section, the invention is explained using exemplary embodiments, from which further inventive features can result, but to which the scope of the invention is not limited. The exemplary embodiments are shown in the drawings.
Es zeigen: Show it:
Fig. 1 ein erstes Ausführungsbeispiel einer erfindungsgemäßen Schaltvorrichtung 1 in perspektivischer Seitenansicht, 1 shows a first exemplary embodiment of a switching device 1 according to the invention in a perspective side view,
Fig. 2 das erste Ausführungsbeispiel der erfindungsgemäßen Schaltvorrichtung 1 in Seitenansicht, 2 shows the first exemplary embodiment of the switching device 1 according to the invention in a side view,
Fig. 3 eine Detailansicht eines Halbleiterbausteins 2a der Schaltvorrichtung 1, 3 shows a detailed view of a semiconductor component 2a of the switching device 1,
Fig. 4 ein zweites Ausführungsbeispiel der erfindungsgemäßen Schaltvorrichtung 101 in perspektivischer Seitenansicht, 4 shows a second exemplary embodiment of the switching device 101 according to the invention in a perspective side view,
Fig. 5 das zweite Ausführungsbeispiel der erfindungsgemäßen Schaltvorrichtung 101 in teiltransparenter Seitenansicht,
Fig. 6 eine erste Stromschiene 6 der Schaltvorrichtung 201 nach einem ersten Verfahrensschritt, 5 shows the second exemplary embodiment of the switching device 101 according to the invention in a partially transparent side view, 6 shows a first busbar 6 of the switching device 201 after a first method step,
Fig. 7 die erste Stromschiene 6 der Schaltvorrichtung 201 nach einem zweiten Verfahrensschritt, 7 shows the first busbar 6 of the switching device 201 after a second method step,
Fig. 8 einen Flächenverbinder 123 mit einem Einpressstift 124 der Schaltvorrichtung8 shows a surface connector 123 with a press-in pin 124 of the switching device
101, Fig. 9 ein drittes Ausführungsbeispiel der erfindungsgemäßen Schaltvorrichtung 201 in perspektivischer Seitenansicht, 101, FIG. 9 shows a third exemplary embodiment of the switching device 201 according to the invention in a perspective side view,
Fig. 10 eine Seitenansicht des dritten Ausführungsbeispiels der erfindungsgemäßen Schaltvorrichtung 201, Fig. 10 is a side view of the third embodiment of the switching device 201 according to the invention,
Fig. 11 eine erste Stromschiene 6 und eine zweite Stromschiene 16 der Schaltvorrichtung nach einem ersten Verfahrensschritt, 11 shows a first busbar 6 and a second busbar 16 of the switching device after a first method step,
Fig. 12 die erste Stromschiene 6 und die zweite Stromschiene 16 nach einem zweiten Verfahrensschritt, 12 shows the first busbar 6 and the second busbar 16 after a second method step,
Fig. 13 die erste Stromschiene 6 und die zweite Stromschiene 16 nach einem dritten Verfahrensschritt, 13 shows the first busbar 6 and the second busbar 16 after a third method step,
Fig. 14 eine Seitenansicht eines vierten Ausführungsbeispiels der erfindungsgemäßen Schaltvorrichtung 301, 14 shows a side view of a fourth exemplary embodiment of the switching device 301 according to the invention,
Fig. 15 eine erste Stromschiene 6 der Schaltvorrichtung 301 nach einem ersten Verfahrensschritt, 15 shows a first busbar 6 of the switching device 301 after a first method step,
Fig. 16 die erste Stromschiene 6 nach einem zweiten Verfahrensschritt, 16 shows the first conductor rail 6 after a second method step,
Fig. 17 eine zweite Stromschiene 16 der Schaltvorrichtung 301 nach dem zweiten Verfahrensschritt,
Fig. 18 eine teiltransparente perspektivische Seitenansicht eines fünften17 shows a second busbar 16 of the switching device 301 after the second method step, 18 shows a partially transparent perspective side view of a fifth
Ausführungsbeispiels der erfindungsgemäßen Schaltvorrichtung 401, Embodiment of the switching device according to the invention 401,
Fig. 19 eine Seitenansicht des fünften Ausführungsbeispiels der erfindungsgemäßen Schaltvorrichtung 401, Fig. 19 is a side view of the fifth embodiment of the switching device 401 according to the invention,
Fig. 20 eine perspektivische Draufsicht auf das fünfte Ausführungsbeispiel der erfindungsgemäßen Schaltvorrichtung 401, 20 shows a perspective plan view of the fifth exemplary embodiment of the switching device 401 according to the invention,
Fig. 21 eine erste Stromschiene 6 und eine zweite Stromschiene 16 der Schaltvorrichtung 401 nach einem ersten Verfahrensschritt und 21 shows a first busbar 6 and a second busbar 16 of the switching device 401 after a first method step and
Fig. 22 die erste Stromschiene 6 und die zweite Stromschiene 16 während eines zweiten Verfahrensschritts. 22 shows the first busbar 6 and the second busbar 16 during a second method step.
Das in Fig. 1 und Fig. 2 dargestellte erste Ausführungsbeispiel der erfindungsgemäßen Schaltvorrichtung weist eine erste Stromschiene 6, eine zweite Stromschiene 16 und Halbleiterbausteine 2a auf. Die Halbleiterbausteine 2a sind jeweils zwischen der ersten Stromschiene 6 und der zweiten Stromschiene 16 angeordnet. In den Fig. 1 und 2 sind beispielhaft jeweils drei Halbleiterbausteine 2a dargestellt, es können aber auch nur ein Halbleiterbaustein 2a, zwei Halbleiterbausteine 2a oder mehr als drei Halbleiterbausteine 2a zwischen den Stromschienen (6, 16) angeordnet sein. The first exemplary embodiment of the switching device according to the invention shown in FIG. 1 and FIG. 2 has a first busbar 6, a second busbar 16 and semiconductor components 2a. The semiconductor components 2a are each arranged between the first busbar 6 and the second busbar 16 . 1 and 2 each show three semiconductor components 2a, but only one semiconductor component 2a, two semiconductor components 2a or more than three semiconductor components 2a can also be arranged between the busbars (6, 16).
Die erste Stromschiene 6 weist eine erste Ausnehmung 7 zur Verbindung der ersten Stromschiene 6 beispielsweise mit einer weiteren Stromschiene auf. Die zweite Stromschiene 16 weist eine zweite Ausnehmung 17 zur Verbindung der zweiten Stromschiene 16 beispielsweise mit einer externen Stromschiene auf. Vorzugsweise weisen die erste Stromschiene 6 und die zweite Stromschiene 16 die gleiche Form auf. The first busbar 6 has a first recess 7 for connecting the first busbar 6 to a further busbar, for example. The second busbar 16 has a second recess 17 for connecting the second busbar 16 to an external busbar, for example. The first busbar 6 and the second busbar 16 preferably have the same shape.
Die Stromschienen (6, 16) sind jeweils als Kupferstromschienen ausgeführt. The busbars (6, 16) are each designed as copper busbars.
In Fig. 3 ist ein Halbleiterbaustein 2a im Detail dargestellt. Der Halbleiterbaustein 2a weist einen ersten Halbleiterschalter 2 und einen zweiten Halbleiterschalter 12 auf. Vorzugsweise sind die Halbleiterschalter (2, 12) als MOSFET-Schalter ausgeführt.
Die Halbleiterschalter (2, 12) sind jeweils als Schichtsystem ausgeführt, das zumindest zwei Schichten als Elektroden aufweist. Die Halbleiterschalter (2, 12) weisen kein Gehäuse auf, so dass die Elektroden direkt auf den Stromschienen (6, 16) angeordnet sind und beispielsweise mittels Lotmasse mit den Stromschienen (6, 16) elektrisch leitend und stoffschlüssig verbunden sind. A semiconductor module 2a is shown in detail in FIG. The semiconductor component 2a has a first semiconductor switch 2 and a second semiconductor switch 12 . The semiconductor switches (2, 12) are preferably designed as MOSFET switches. The semiconductor switches (2, 12) are each designed as a layer system which has at least two layers as electrodes. The semiconductor switches (2, 12) have no housing, so that the electrodes are arranged directly on the busbars (6, 16) and are connected to the busbars (6, 16) in an electrically conductive and materially bonded manner, for example by means of soldering compound.
Der erste Halbleiterschalter 2 weist eine erste Quellelektrode (Source) 4, eine erste Abflusselektrode (Drain) 3 und eine erste Steuerelektrode (Gate) 5 auf. Der zweite Halbleiterschalter 12 weist eine zweite Quellelektrode (Source) 14, eine zweite Abflusselektrode (Drain) 13 und eine zweite Steuerelektrode (Gate) 15 auf. The first semiconductor switch 2 has a first source electrode (source) 4 , a first drain electrode (drain) 3 and a first control electrode (gate) 5 . The second semiconductor switch 12 has a second source electrode (source) 14 , a second drain electrode (drain) 13 and a second control electrode (gate) 15 .
Die Halbleiterschalter (2, 12) sind derart angeordnet, dass die erste Quellelektrode 4 mit der zweiten Quellelektrode 14 elektrisch leitend verbunden ist, insbesondere wobei die erste Quellelektrode 4 die zweite Quellelektrode 14 berührt. Vorzugsweise sind die Halbleiterschalter (2, 12) aufeinander angeordnet, so dass die erste Quellelektrode 4 auf der zweiten Quellelektrode 14 angeordnet ist. Die erste Abflusselektrode 3 ist elektrisch leitend mit der ersten Stromschiene 6 verbunden, insbesondere wobei die erste Abflusselektrode 3 die erste Stromschiene 6 berührt. Die zweite Abflusselektrode 13 ist elektrisch leitend mit der zweiten Stromschiene 16 verbunden, insbesondere wobei die zweite Abflusselektrode 13 die zweite Stromschiene 16 berührt. The semiconductor switches (2, 12) are arranged in such a way that the first source electrode 4 is electrically conductively connected to the second source electrode 14, in particular with the first source electrode 4 touching the second source electrode 14. The semiconductor switches (2, 12) are preferably arranged one on top of the other, so that the first source electrode 4 is arranged on the second source electrode 14. The first drain electrode 3 is electrically conductively connected to the first busbar 6 , in particular with the first drain electrode 3 touching the first busbar 6 . The second drain electrode 13 is electrically conductively connected to the second busbar 16 , in particular with the second drain electrode 13 touching the second busbar 16 .
Gemäß einer weiteren in den Figuren nicht dargestellten Ausführungsform sind die Halbleiterschalter derart aufeinander angeordnet, dass die erste Abflusselektrode auf der zweiten Abflusselektrode angeordnet ist. According to a further embodiment not shown in the figures, the semiconductor switches are arranged one on top of the other in such a way that the first drain electrode is arranged on the second drain electrode.
Die Schichten der Elektroden des Halbleiterbausteins 2a sind stufenartig angeordnet. Dabei bilden die erste Abflusselektrode 3 und die zweite Abflusselektrode 13 jeweils eine Stufe und die erste und zweite Quellelektrode (4, 14) bilden gemeinsam eine Stufe. The layers of the electrodes of the semiconductor device 2a are arranged in a stepwise manner. The first drain electrode 3 and the second drain electrode 13 each form a stage, and the first and second source electrodes (4, 14) together form a stage.
In der ersten Quellelektrode 4 ist die erste Steuerelektrode 5 angeordnet. Dabei ist die erste Steuerelektrode 5 auf einer freien Oberfläche der ersten Quellelektrode 4 angeordnet, so dass die erste Steuerelektrode 5 kontaktierbar ist.
In der zweiten Abflusselektrode 13 ist die zweite Steuerelektrode 15 angeordnet. Dabei ist die zweite Steuerelektrode 15 auf einer freien Oberfläche der zweiten Abflusselektrode 13 angeordnet, so dass die zweite Steuerelektrode 15 kontaktierbar ist. The first control electrode 5 is arranged in the first source electrode 4 . In this case, the first control electrode 5 is arranged on a free surface of the first source electrode 4, so that the first control electrode 5 can be contacted. The second control electrode 15 is arranged in the second outflow electrode 13 . In this case, the second control electrode 15 is arranged on a free surface of the second outflow electrode 13, so that the second control electrode 15 can be contacted.
Die Schaltvorrichtung 1 ist teilweise mittels einer in den Figuren 1 und 2 nicht dargestellten Vergussmasse vergossen. Dabei sind die Halbleiterbausteine (2a) vollständig innerhalb der Vergussmasse angeordnet. Die erste und zweite Stromschiene (6, 16), sind jeweils teilweise innerhalb der Vergussmasse angeordnet. Dabei erstreckt sich ein Endbereich der jeweiligen Stromschiene (6, 16) aus der Vergussmasse heraus, so dass die erste und/oder die zweite Ausnehmung (7, 17) beabstandet von der Vergussmasse sind. The switching device 1 is partially encapsulated by means of an encapsulating compound that is not shown in FIGS. In this case, the semiconductor components (2a) are arranged completely within the casting compound. The first and second busbars (6, 16) are each partially arranged within the casting compound. An end area of the respective busbar (6, 16) extends out of the casting compound, so that the first and/or the second recess (7, 17) are at a distance from the casting compound.
In den Figuren 1 und 2 nicht dargestellte Kontaktflächen für die Halbleiterschalter sind teilweise in der Vergussmasse angeordnet und von extern kontaktierbar. Die Kontaktflächen sind mit einem jeweiligen Halbleiterschalter elektrisch leitend verbunden. Contact surfaces for the semiconductor switches, not shown in FIGS. 1 and 2, are partially arranged in the casting compound and can be contacted from the outside. The contact surfaces are electrically conductively connected to a respective semiconductor switch.
Das in Fig. 4 und 5 dargestellte zweite Ausführungsbeispiel der erfindungsgemäßen Schaltvorrichtung 101 weist eine erste Stromschiene 6, eine zweite Stromschiene 16, erste Halbleiterschalter 2, zweite Halbleiterschalter 12, eine Vergussmasse 22, eine erste Vergussmasse 122, eine zweite Vergussmasse, Flächenverbinder 123, Anschlussverbinder 120 und Drahtverbinder 121 auf. The second exemplary embodiment of the switching device 101 according to the invention shown in FIGS. 4 and 5 has a first busbar 6, a second busbar 16, first semiconductor switches 2, second semiconductor switches 12, a potting compound 22, a first potting compound 122, a second potting compound, surface connectors 123, connection connectors 120 and wire connector 121 on.
Wie in Fig. 6 dargestellt sind ersten Halbleiterschalter 2 auf der ersten Stromschiene 6 in Reihe nebeneinander angeordnet. Dabei ist die jeweilige erste Abflusselektrode 3 stoffschlüssig und elektrisch leitend mit der ersten Stromschiene 6 verbunden, insbesondere mittels Lotmasse verbunden. Jeweilige Anschlussverbinder 120 sind neben der ersten Stromschiene 6 angeordnet und mittels jeweils eines Drahtverbinders 121 elektrisch leitend mit einer jeweiligen ersten Steuerelektrode 5 verbunden. Ein erster Anschlussverbinder 120 ist elektrisch leitend mit der ersten Stromschiene 6 verbunden.
Die Halbleiterschalter (2, 12) sind jeweils quaderförmig ausgeführt. Dabei bildet eine jeweilige Abflusselektrode (3, 13) eine im Wesentlichen quadratische Grundfläche des jeweiligen Halbleiterschalters (2, 12) auf der eine jeweilige Quellelektrode (4, 14) und eine jeweilige Steuerelektrode (5, 15) nebeneinander angeordnet sind. Dabei ist die jeweilige Quellelektrode (4, 14) größer als die jeweilige Steuerelektrode (5, 15), insbesondere mehr als fünfmal so groß. As shown in FIG. 6 , first semiconductor switches 2 are arranged in series next to one another on first busbar 6 . In this case, the respective first discharge electrode 3 is connected to the first busbar 6 in a materially bonded and electrically conductive manner, in particular by means of a soldering compound. Each connection connector 120 is arranged next to the first busbar 6 and is electrically conductively connected to a respective first control electrode 5 by means of a respective wire connector 121 . A first connection connector 120 is electrically conductively connected to the first busbar 6 . The semiconductor switches (2, 12) are each designed in the shape of a cuboid. Each drain electrode (3, 13) forms an essentially square base area of the respective semiconductor switch (2, 12) on which a respective source electrode (4, 14) and a respective control electrode (5, 15) are arranged next to one another. The respective source electrode (4, 14) is larger than the respective control electrode (5, 15), in particular more than five times as large.
Fig. 7 zeigt, dass die Anschlussverbinder 120 mittels der weiteren Vergussmasse 122 stoffschlüssig mit der ersten Stromschiene 6 verbunden sind. Dazu erstreckt sich die weitere Vergussmasse 122 entlang einer Längsrichtung der ersten Stromschiene 6 seitlich an der ersten Stromschiene 6. An einem jeweiligen Anschlussverbinder 120 ist jeweils ein weiterer Einpressstift 125 angeordnet. 7 shows that the connection connectors 120 are materially connected to the first busbar 6 by means of the further casting compound 122 . For this purpose, the further casting compound 122 extends along a longitudinal direction of the first busbar 6 laterally on the first busbar 6. A further press-in pin 125 is arranged on each connection connector 120.
Die zweiten Halbleiterschalter 12, Anschlussverbinder 120, Drahtverbinder 121 und die zweite Vergussmasse sind gleichartig an der zweiten Stromschiene 16 angeordnet wie in Fig. 6 und 7 gezeigt und oben für die erste Stromschiene 6 beschrieben ist. The second semiconductor switches 12, terminal connectors 120, wire connectors 121 and the second potting compound are arranged on the second busbar 16 in the same way as shown in FIGS. 6 and 7 and as described above for the first busbar 6.
In Fig. 8 ist ein Flächenverbinder 123 im Detail dargestellt. Der Flächenverbinder 123 weist eine Länge auf, die größer ist als die Breite der ersten Stromschiene 6 beziehungsweise der zweiten Stromschiene 16. Die Breite des Flächenverbinders 123 ist ungefähr so groß wie die Breite eines ersten oder zweiten Halbleiterschalters (2,A surface connector 123 is shown in detail in FIG. The surface connector 123 has a length that is greater than the width of the first busbar 6 or the second busbar 16. The width of the surface connector 123 is approximately as large as the width of a first or second semiconductor switch (2,
12). An einem schmalen Ende des Flächenverbinders 123 ist ein Einpressstift 124 angeordnet, insbesondere der in den Flächenverbinder 123 eingepresst ist. 12). A press-in pin 124 is arranged on a narrow end of the surface connector 123 , in particular which is pressed into the surface connector 123 .
Der Flächenverbinder 123 und der Einpressstift 124 sind elektrisch leitfähig ausgeführt, vorzugsweise aus Metall, insbesondere aus Kupfer. The surface connector 123 and the press-in pin 124 are designed to be electrically conductive, preferably made of metal, in particular copper.
Die Flächenverbinder 123 sind in der Schaltvorrichtung 101 derart zwischen der ersten Stromschiene 6 und der zweiten Stromschiene 16 angeordnet, dass ein jeweiliger Flächenverbinder 123 eine jeweilige erste Quellelektrode 4 und eine jeweilige zweite Quellelektrode 14 elektrisch leitend verbindet. Dazu ist der Flächenverbinder 123 stoffschlüssig mit der jeweiligen Quellelektrode (4, 14) verbunden, insbesondere mittels Lotmasse.
Die Stromschienen (6, 16) sind zumindest teilweise mittels der Vergussmasse 22 eingehaust. Dabei sind die Halbleiterschalter (2, 12) vollständig innerhalb der Vergussmasse 22 angeordnet. Seitlich kragen jeweils die Stromschienen (6, 16) einander gegenüberliegend aus der Vergussmasse 22 aus. An einer Längsseite der Schaltvorrichtung 101 kragen die Anschlussverbinder 120 und die Einpressstifte 124 aus der Vergussmasse 22 aus. An einer gegenüberliegenden Längsseite kragen die Flächenverbinder 123 aus der Vergussmasse 22 aus. Dadurch sind die aus der Vergussmasse 22 auskragenden Flächenverbinder 123 mit einer Kühlvorrichtung verbindbar. The surface connectors 123 are arranged in the switching device 101 between the first busbar 6 and the second busbar 16 such that a respective surface connector 123 electrically conductively connects a respective first source electrode 4 and a respective second source electrode 14 . For this purpose, the surface connector 123 is materially connected to the respective source electrode (4, 14), in particular by means of a soldering compound. The busbars (6, 16) are at least partially encased by the casting compound 22. In this case, the semiconductor switches ( 2 , 12 ) are arranged completely within the casting compound 22 . The conductor rails (6, 16) protrude laterally from the casting compound 22 opposite one another. The connection connectors 120 and the press-in pins 124 protrude from the casting compound 22 on a longitudinal side of the switching device 101 . The surface connectors 123 protrude from the casting compound 22 on an opposite longitudinal side. As a result, the surface connectors 123 protruding from the casting compound 22 can be connected to a cooling device.
Gemäß einer alternativen Ausgestaltung, die in den Figuren nicht dargestellt ist, könnte ein einziger Flächenverbinder zwischen der ersten Stromschiene 6 und der zweiten Stromschiene 16 angeordnet sein, der alle ersten und zweiten Quellelektroden (4, 14) elektrisch leitend miteinander verbindet. According to an alternative embodiment, which is not shown in the figures, a single surface connector could be arranged between the first busbar 6 and the second busbar 16, which electrically conductively connects all the first and second source electrodes (4, 14) to one another.
Zur Herstellung der Schaltvorrichtung 101 gemäß dem zweiten Ausführungsbeispiel werden in einem ersten Verfahrensschritt die ersten Halbleiterschalter 2 auf der ersten Stromschiene 6 angeordnet und stoffschlüssig mit der ersten Stromschiene 6 verbunden. Die Anschlussverbinder 120 werden neben der ersten Stromschiene 6 angeordnet und jeweils mittels eines jeweiligen Drahtverbinders 121 mit einer jeweiligen ersten Steuerelektrode 5 elektrisch leitend verbunden. Alternativ werden die erste Stromschiene 6 und die Anschlussverbinder 120 aus einem Stanzgitter ausgestanzt, bevor die ersten Halbleiterschalter 2 mit der ersten Stromschiene 6 verbunden werden. To produce the switching device 101 according to the second exemplary embodiment, the first semiconductor switches 2 are arranged on the first busbar 6 and connected to the first busbar 6 in a materially bonded manner in a first method step. The connection connectors 120 are arranged next to the first busbar 6 and are each electrically conductively connected to a respective first control electrode 5 by means of a respective wire connector 121 . Alternatively, the first busbar 6 and the connection connectors 120 are stamped out of a pressed screen before the first semiconductor switches 2 are connected to the first busbar 6 .
In einem zweiten Verfahrensschritt werden die Anschlussverbinder 120 mittels der ersten Vergussmasse 122 mit der ersten Stromschiene 6 stoffschlüssig verbunden. In a second method step, the connection connectors 120 are materially connected to the first busbar 6 by means of the first casting compound 122 .
Die zweite Stromschiene 16 wird in gleicher Art und Weise mit den zweiten Halbleiterschaltern 12 und jeweiligen Anschlussverbindern 120 verbunden. The second busbar 16 is connected to the second semiconductor switches 12 and respective terminal connectors 120 in the same way.
Anschließend werden die Flächenverbinder 123 zwischen der ersten und zweiten Stromschiene (6, 16) angeordnet und die Stromschienen (6, 16) werden zumindest teilweise mit der Vergussmasse 22 umspritzt.
Das in Fig. 9 und 10 dargestellte dritte Ausführungsbeispiel der erfindungsgemäßen Schaltvorrichtung 201 weist ebenfalls eine erste Stromschiene 6, eine zweite Stromschiene 16, erste Halbleiterschalter 2, zweite Halbleiterschalter 12, Anschlussverbinder 120 und eine Vergussmasse 22 auf. The surface connectors 123 are then arranged between the first and second busbars (6, 16) and the busbars (6, 16) are at least partially overmoulded with the casting compound 22. The third exemplary embodiment of the switching device 201 according to the invention, illustrated in FIGS.
Statt jeweils eines Flächenverbinders wie im zweiten Ausführungsbeispiel der Schaltvorrichtung 101 ist gemäß dem dritten Ausführungsbeispiel der Schaltvorrichtung 201 jeweils ein erster Flächenverbinder 223 auf einem ersten Halbleiterschalter 2 angeordnet und jeweils ein zweiter Flächenverbinder 233 ist auf einem zweiten Halbleiterschalter 12 angeordnet. Dabei ist der jeweilige erste Flächenverbinder 223 elektrisch leitend und stoffschlüssig mit dem jeweiligen ersten Halbleiterschalter 2, insbesondere einer ersten Quellelektrode 4, verbunden. Der jeweilige zweite Flächenverbinder 233 ist elektrisch leitend und stoffschlüssig mit dem jeweiligen zweiten Halbleiterschalter 12, insbesondere einer zweiten Quellelektrode 14, verbunden. Instead of a surface connector as in the second exemplary embodiment of switching device 101, according to the third exemplary embodiment of switching device 201, a first surface connector 223 is arranged on a first semiconductor switch 2 and a second surface connector 233 is arranged on a second semiconductor switch 12. In this case, the respective first surface connector 223 is electrically conductive and materially connected to the respective first semiconductor switch 2 , in particular a first source electrode 4 . The respective second surface connector 233 is electrically conductive and cohesively connected to the respective second semiconductor switch 12, in particular a second source electrode 14.
Die ersten und zweiten Flächenverbinder (223, 233) weisen eine Breite auf, die gleich der Breite der ersten beziehungsweise zweiten Halbleiterschalter (2, 12) ist. Die Länge der Flächenverbinder (223, 233) ist größer als eine Breite der ersten beziehungsweise zweiten Stromschiene (6, 16). Jeder erste Flächenverbinder 223 weist einen Anschlussabschnitt auf zur elektrischen Kontaktierung, der Anschlussabschnitt erstreckt sich dabei jeweils seitlich von dem ersten Halbleiterschalter 2. Vorzugsweise sind die ersten Flächenverbinder 223 dünner als die zweiten Flächenverbinder 233, insbesondere wobei die ersten Flächenverbinder 223 dünner als 2 mm sind. The first and second surface connectors (223, 233) have a width equal to the width of the first and second semiconductor switches (2, 12), respectively. The length of the surface connectors (223, 233) is greater than a width of the first or second busbar (6, 16). Each first surface connector 223 has a connection section for electrical contacting, the connection section in each case extending laterally from the first semiconductor switch 2. The first surface connectors 223 are preferably thinner than the second surface connectors 233, in particular the first surface connectors 223 being thinner than 2 mm.
Alternativ können die ersten und zweiten Flächenverbinder (223, 233) auch eine identische Form aufweisen. Alternatively, the first and second surface connectors (223, 233) can also have an identical shape.
Die ersten Flächenverbinder 223 und die zweiten Flächenverbinder 233 sind in der Schaltvorrichtung 201 zwischen der ersten und zweiten Stromschiene (6, 16) angeordnet. Dabei ist jeweils ein erster Flächenverbinder 223 mit einem zweiten Flächenverbinder 233 elektrisch leitend und stoffschlüssig verbunden, insbesondere
wobei Lotmasse zwischen dem jeweiligen ersten Flächenverbinder 223 und dem jeweiligen zweiten Flächenverbinder 233 angeordnet ist. The first surface connectors 223 and the second surface connectors 233 are arranged in the switching device 201 between the first and second busbars (6, 16). In this case, a first surface connector 223 is electrically conductively and cohesively connected to a second surface connector 233, in particular soldering compound being arranged between the respective first surface connector 223 and the respective second surface connector 233 .
Die Stromschienen (6, 16) sind zumindest teilweise mittels der Vergussmasse 22 eingehaust. Dabei sind die Halbleiterschalter (2, 12) vollständig innerhalb der Vergussmasse 22 angeordnet. Seitlich kragen jeweils die Stromschienen (6, 16) einander gegenüberliegend aus der Vergussmasse 22 aus. An einer Längsseite der Schaltvorrichtung 101 kragen die Anschlussverbinder 120 und die Anschlussabschnitte der ersten Flächenverbinder 223 aus der Vergussmasse 22 aus. An einer gegenüberliegenden Längsseite kragen die miteinander verbundenen ersten und zweiten Flächenverbinder (223, 233) aus der Vergussmasse 22 aus. The busbars (6, 16) are at least partially encased by the casting compound 22. In this case, the semiconductor switches ( 2 , 12 ) are arranged completely within the casting compound 22 . The conductor rails (6, 16) protrude laterally from the casting compound 22 opposite one another. The connection connectors 120 and the connection sections of the first surface connectors 223 protrude from the casting compound 22 on a longitudinal side of the switching device 101 . The first and second surface connectors (223, 233) connected to one another protrude from the casting compound 22 on an opposite longitudinal side.
Zur Herstellung der Schaltvorrichtung 201 gemäß dem dritten Ausführungsbeispiel werden in einem ersten Verfahrensschritt die ersten Halbleiterschalter 2 auf der ersten Stromschiene 6 angeordnet und stoffschlüssig mit der ersten Stromschiene 6 verbunden. Die Anschlussverbinder 220 werden neben der ersten Stromschiene 6 angeordnet und jeweils mittels eines jeweiligen Drahtverbinders mit einer jeweiligen ersten Steuerelektrode 5 elektrisch leitend verbunden. Alternativ werden die erste Stromschiene 6 und die Anschlussverbinder 120 aus einem Stanzgitter ausgestanzt bevor die ersten Halbleiterschalter 2 mit der ersten Stromschiene 6 verbunden werden. Weiterhin werden die zweiten Halbleiterschalter 12 auf der zweiten Stromschiene 16 angeordnet und stoffschlüssig mit der zweiten Stromschiene 16 verbunden. Die Anschlussverbinder 220 werden neben der zweiten Stromschiene 16 angeordnet und jeweils mittels eines jeweiligen Drahtverbinders mit einer jeweiligen zweiten Steuerelektrode 15 elektrisch leitend verbunden. Alternativ werden die zweite Stromschiene 16 und die Anschlussverbinder 120 aus einem Stanzgitter ausgestanzt bevor die zweiten Halbleiterschalter 12 mit der zweiten Stromschiene 16 verbunden werden. To produce the switching device 201 according to the third exemplary embodiment, the first semiconductor switches 2 are arranged on the first busbar 6 and connected to the first busbar 6 in a materially bonded manner in a first method step. The connection connectors 220 are arranged next to the first busbar 6 and are each electrically conductively connected to a respective first control electrode 5 by means of a respective wire connector. Alternatively, the first busbar 6 and the connection connectors 120 are stamped out of a pressed screen before the first semiconductor switches 2 are connected to the first busbar 6 . Furthermore, the second semiconductor switches 12 are arranged on the second busbar 16 and are materially connected to the second busbar 16 . The connection connectors 220 are arranged next to the second busbar 16 and are each electrically conductively connected to a respective second control electrode 15 by means of a respective wire connector. Alternatively, the second busbar 16 and the terminal connectors 120 are stamped out of a pressed screen before the second semiconductor switches 12 are connected to the second busbar 16 .
In einem zweiten Verfahrensschritt werden die ersten Flächenverbinder 223 auf den ersten Halbleiterschaltern 2 angeordnet und mit den ersten Halbleiterschaltern 2 elektrisch leitend und stoffschlüssig verbunden. Die zweiten Flächenverbinder 233 werden auf den zweiten Halbleiterschaltern 12 angeordnet und mit den zweiten Halbleiterschaltern 12 elektrisch leitend und stoffschlüssig verbunden.
In einem dritten Verfahrensschritt werden die erste Stromschiene 6 und die zweite Stromschiene 16 miteinander verbunden. Dabei werden die ersten Flächenverbinder 223 mit den zweiten Flächenverbindern 233 elektrisch leitend und stoffschlüssig verbunden. Vorzugsweise wird dazu vor dem dritten Verfahrensschritt Lotmasse auf die ersten und/oder zweiten Flächenverbinder (223, 233) aufgebracht. In a second method step, the first surface connectors 223 are arranged on the first semiconductor switches 2 and are electrically conductively and cohesively connected to the first semiconductor switches 2 . The second area connectors 233 are arranged on the second semiconductor switches 12 and are electrically conductively and cohesively connected to the second semiconductor switches 12 . In a third method step, the first busbar 6 and the second busbar 16 are connected to one another. The first surface connectors 223 are electrically conductively and cohesively connected to the second surface connectors 233 . For this purpose, soldering compound is preferably applied to the first and/or second surface connectors (223, 233) before the third method step.
Anschließend werden die Stromschienen (6, 16) zumindest teilweise mit der Vergussmasse 22 umspritzt. Subsequently, the busbars (6, 16) are at least partially encapsulated with the casting compound 22.
In Fig. 14 ist das vierte Ausführungsbeispiel der erfindungsgemäßen Schaltvorrichtung 301 dargestellt. The fourth exemplary embodiment of the switching device 301 according to the invention is shown in FIG.
Das vierte Ausführungsbeispiel der erfindungsgemäßen Schaltvorrichtung 301 unterscheidet sich von dem dritten Ausführungsbeispiel der erfindungsgemäßen Schaltvorrichtung 201 im Wesentlichen durch die Form der ersten Flächenverbinder 323. The fourth exemplary embodiment of the switching device 301 according to the invention differs from the third exemplary embodiment of the switching device 201 according to the invention essentially in the shape of the first surface connector 323.
Die ersten Flächenverbinder 323 und zweiten Flächenverbinder 333 weisen eine Breite auf, die etwas schmaler ist als die Breite der ersten beziehungsweise zweiten Halbleiterschalter (2, 12), so dass die jeweiligen Steuerelektroden (5, 15) neben den jeweiligen Flächenverbindern (323, 333) mittels eines Drahtverbinders 321 mit dem jeweiligen Anschlussverbinder 320 elektrisch leitend verbunden sind. The first area connectors 323 and second area connectors 333 have a width that is slightly narrower than the width of the first and second semiconductor switches (2, 12) respectively, so that the respective control electrodes (5, 15) next to the respective area connectors (323, 333) are electrically conductively connected to the respective terminal connector 320 by means of a wire connector 321 .
Ein Anschlussabschnitt des jeweiligen ersten Flächenverbinders 323 ist zentral an einer kurzen Seite des ersten Flächenverbinders 323 angeordnet. A connection section of the respective first surface connector 323 is arranged centrally on a short side of the first surface connector 323 .
In Fig. 18, 19 und 20 ist das fünfte Ausführungsbeispiel der erfindungsgemäßen Schaltvorrichtung 401 dargestellt. In Fig. 18, 19 and 20, the fifth embodiment of the switching device 401 according to the invention is shown.
Das fünfte Ausführungsbeispiel der erfindungsgemäßen Schaltvorrichtung 401 unterscheidet sich im Wesentlichen von dem dritten Ausführungsbeispiel der erfindungsgemäßen Schaltvorrichtung 201 dadurch, dass jeweils ein erster und ein zweiter Flächenverbinder einstückig als ein Flächenverbinder 423 ausgeführt sind.
Dabei ist der Flächenverbinder 423 klappbar ausgeführt, wobei der Flächenverbinder 423 entlang einer Linie klappbar ist, die den Flächenverbinder 423 in zwei Abschnitte unterteilt, deren jeweilige Form einem ersten beziehungsweise einem zweiten Flächenverbinder (223, 233) der Schaltvorrichtung gemäß dem dritten Ausführungsbeispiel entspricht. Vorzugsweise ist der Flächenverbinder 423 dünner als 2 mm. The fifth exemplary embodiment of the switching device 401 according to the invention differs essentially from the third exemplary embodiment of the switching device 201 according to the invention in that a first and a second surface connector are designed in one piece as a surface connector 423 . The surface connector 423 is designed to be foldable, with the surface connector 423 being foldable along a line that divides the surface connector 423 into two sections, the respective shape of which corresponds to a first and a second surface connector (223, 233) of the switching device according to the third exemplary embodiment. Preferably, the surface connector 423 is thinner than 2 mm.
Die Flächenverbinder 423 sind in der Schaltvorrichtung 401 zusammengeklappt zwischen der ersten und zweiten Stromschiene (6, 16) angeordnet. Dabei ist jeweils ein erster Abschnitt des Flächenverbinders 423 mit einem zweiten Abschnitt des jeweiligen Flächenverbinders 423 elektrisch leitend und stoffschlüssig verbunden, insbesondere wobei Lotmasse zwischen den Abschnitten des jeweiligen Flächenverbinders 423 angeordnet ist. The surface connectors 423 are arranged folded up in the switching device 401 between the first and second busbars (6, 16). In this case, a first section of the surface connector 423 is electrically conductively and cohesively connected to a second section of the respective surface connector 423 , in particular soldering material being arranged between the sections of the respective surface connector 423 .
Zur Herstellung der Schaltvorrichtung 401 gemäß dem fünften Ausführungsbeispiel werden in einem ersten Verfahrensschritt die ersten Halbleiterschalter 2 auf der ersten Stromschiene 6 angeordnet und stoffschlüssig mit der ersten Stromschiene 6 verbunden. Anschlussverbinder 420 werden neben der ersten Stromschiene 6 angeordnet und jeweils mittels eines jeweiligen Drahtverbinders mit einer jeweiligen ersten Steuerelektrode elektrisch leitend verbunden. Weiterhin werden die zweiten Halbleiterschalter 12 auf der zweiten Stromschiene 16 angeordnet und stoffschlüssig mit der zweiten Stromschiene 16 verbunden. Anschlussverbinder 420 werden neben der zweiten Stromschiene 16 angeordnet und jeweils mittels eines jeweiligen Drahtverbinders mit einer jeweiligen zweiten Steuerelektrode elektrisch leitend verbunden. Anschließend werden die Stromschienen (6, 16) entgegengesetzt zueinander nebeneinander angeordnet und jeweils ein Flächenverbinder 423 wird auf einem ersten Halbleiterschalter 2 und einem zweiten Halbleiterschalter 12 angeordnet und elektrisch leitend und stoffschlüssig mit den jeweiligen Halbleiterschaltern (2, 12) verbunden, insbesondere mittels Lotmasse verbunden. Dadurch verbindet jeweils ein Flächenverbinder 423 einen ersten Halbleiterschalter 2 mit einem zweiten Halbleiterschalter 12 elektrisch leitend. To produce the switching device 401 according to the fifth exemplary embodiment, the first semiconductor switches 2 are arranged on the first busbar 6 and connected to the first busbar 6 in a materially bonded manner in a first method step. Connection connectors 420 are arranged next to the first busbar 6 and are electrically conductively connected to a respective first control electrode by means of a respective wire connector. Furthermore, the second semiconductor switches 12 are arranged on the second busbar 16 and are materially connected to the second busbar 16 . Connection connectors 420 are arranged next to the second busbar 16 and are electrically conductively connected to a respective second control electrode by means of a respective wire connector. The busbars (6, 16) are then arranged next to one another opposite one another and a surface connector 423 is arranged on a first semiconductor switch 2 and a second semiconductor switch 12 and is electrically conductively and cohesively connected to the respective semiconductor switches (2, 12), in particular connected by means of soldering compound . As a result, a surface connector 423 connects a first semiconductor switch 2 to a second semiconductor switch 12 in an electrically conductive manner.
Alternativ werden die erste Stromschiene 6, die zweite Stromschiene 16 und die Anschlussverbinder 420 aus einem Stanzgitter ausgestanzt, bevor die ersten
Halbleiterschalter 2 mit der ersten Stromschiene 6 und die zweiten Halbleiterschalter mit der zweiten Stromschiene 16 verbunden werden. Alternatively, the first busbar 6, the second busbar 16 and the connection connector 420 are punched out of a stamped grid before the first Semiconductor switches 2 are connected to the first busbar 6 and the second semiconductor switches are connected to the second busbar 16 .
In einem zweiten Verfahrensschritt werden die Flächenverbinder 423 zusammengeklappt, wodurch die erste Stromschiene 6 und die zweite Stromschiene 16 übereinander angeordnet werden. Vorzugsweise wird dazu vor dem zweiten Verfahrensschritt Lotmasse auf den ersten und/oder zweiten Abschnitt des Flächenverbinders 423 aufgebracht. In a second method step, the surface connectors 423 are folded together, as a result of which the first busbar 6 and the second busbar 16 are arranged one above the other. For this purpose, soldering compound is preferably applied to the first and/or second section of the surface connector 423 before the second method step.
Anschließend werden die Stromschienen (6, 16) zumindest teilweise mit der Vergussmasse 22 umspritzt und/oder vergossen. The busbars (6, 16) are then at least partially encapsulated with the casting compound 22 and/or cast.
Unter einem elektrischen Energiespeicher wird hierbei ein wiederaufladbarer Energiespeicher verstanden, insbesondere aufweisend eine elektrochemische Energiespeicherzelle und/oder ein Energiespeichermodul aufweisend zumindest eine elektrochemische Energiespeicherzelle und/oder ein Energiespeicherpack aufweisend zumindest ein Energiespeichermodul. Die Energiespeicherzelle ist als lithiumbasierte Batteriezelle, insbesondere Lithium-Ionen-Batteriezelle, ausführbar. Alternativ ist die Energiespeicherzelle als Lithium-Polymer-Batteriezelle oder Nickel-Metallhydrid- Batteriezelle oder Blei-Säure-Batteriezelle oder Lithium-Luft-Batteriezelle oder Lithium- Schwefel- Batteriezelle ausgeführt. An electrical energy store is understood to mean a rechargeable energy store, in particular having an electrochemical energy storage cell and/or an energy storage module having at least one electrochemical energy storage cell and/or an energy storage pack having at least one energy storage module. The energy storage cell can be designed as a lithium-based battery cell, in particular a lithium-ion battery cell. Alternatively, the energy storage cell is designed as a lithium polymer battery cell or nickel metal hydride battery cell or lead acid battery cell or lithium air battery cell or lithium sulfur battery cell.
Unter einem Fahrzeug wird hierbei ein zumindest teilweise elektrisch angetriebenes Fahrzeug verstanden, insbesondere ein Landfahrzeug, zum Beispiel ein Personenkraftwagen oder ein Lastkraftwagen oder ein Zweirad. Das Fahrzeug ist beispielsweise ein batterieelektrisch angetriebenes Fahrzeug, das einen rein elektrischen Antrieb aufweist, oder ein Hybridfahrzeug, das einen elektrischen Antrieb und einen Verbrennungsmotor aufweist.
A vehicle is understood to mean an at least partially electrically driven vehicle, in particular a land vehicle, for example a passenger car or a truck or a two-wheeler. The vehicle is, for example, a battery-electric vehicle that has a purely electric drive, or a hybrid vehicle that has an electric drive and an internal combustion engine.
Claims
1. Schaltvorrichtung (101, 201, 301, 401), insbesondere für einen elektrischen Energiespeicher, aufweisend eine erste Stromschiene (6), auf der zumindest ein erster Halbleiterschalter (2) angeordnet ist, und eine zweite Stromschiene (16), auf der zumindest ein zweiter Halbleiterschalter (12) angeordnet ist, dadurch gekennzeichnet, dass zwischen der ersten Stromschiene (6) und der zweiten Stromschiene (16) zumindest ein Flächenverbinder (123, 223, 233, 323, 333, 423) angeordnet ist, der eine Elektrode (5) des ersten Halbleiterschalters (2) mit einer Elektrode (15) des zweiten Halbleiterschalters (15) elektrisch leitend verbindet. 1. Switching device (101, 201, 301, 401), in particular for an electrical energy store, having a first busbar (6) on which at least one first semiconductor switch (2) is arranged, and a second busbar (16) on which at least a second semiconductor switch (12) is arranged, characterized in that between the first busbar (6) and the second busbar (16) at least one surface connector (123, 223, 233, 323, 333, 423) is arranged, which has an electrode ( 5) electrically conductively connects the first semiconductor switch (2) to an electrode (15) of the second semiconductor switch (15).
2. Schaltvorrichtung (101, 201, 301, 401) nach Anspruch 1, dadurch gekennzeichnet, dass der Flächenverbinder (123, 223, 233, 323, 333, 423) den ersten Halbleiterschalter (2) und den zweiten Halbleiterschalter (12) mechanisch, insbesondere stoffschlüssig, verbindet, insbesondere wobei Lotmasse zwischen dem Flächenverbinder (123, 223, 233, 323, 333, 423) und dem ersten Halbleiterschalter (2) und/oder dem zweiten Halbleiterschalter (12) angeordnet ist. 2. Switching device (101, 201, 301, 401) according to claim 1, characterized in that the surface connector (123, 223, 233, 323, 333, 423) mechanically connects the first semiconductor switch (2) and the second semiconductor switch (12), in particular cohesively, in particular soldering compound being arranged between the surface connector (123, 223, 233, 323, 333, 423) and the first semiconductor switch (2) and/or the second semiconductor switch (12).
3. Schaltvorrichtung (101, 201, 301, 401) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die ersten Halbleiterschalter (2) und die zweiten Halbleiterschalter (12) als MOSFET- Schalter ausgeführt sind, insbesondere wobei der Flächenverbinder (123, 223, 233, 323, 333, 423) eine erste Quellelektrode (5) des ersten Halbleiterschalters (2) mit einer zweiten Quellelektrode (15) des zweiten Halbleiterschalters (12) elektrisch leitend verbindet. 3. Switching device (101, 201, 301, 401) according to one of the preceding claims, characterized in that the first semiconductor switches (2) and the second semiconductor switches (12) are designed as MOSFET switches, in particular the surface connector (123, 223 , 233, 323, 333, 423) electrically conductively connects a first source electrode (5) of the first semiconductor switch (2) to a second source electrode (15) of the second semiconductor switch (12).
4. Schaltvorrichtung (101, 201, 301, 401) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass der Flächenverbinder (123, 223, 423) einen Anschlussabschnitt aufweist, insbesondere wobei der Anschlussabschnitt seitlich oder zentriert aus dem Flächenverbinder (123, 223, 323, 423) auskragt.
4. Switching device (101, 201, 301, 401) according to one of the preceding claims, characterized in that the surface connector (123, 223, 423) has a connection section, in particular the connection section extending laterally or centrally from the surface connector (123, 223, 323, 423) cantilevers.
5. Schaltvorrichtung (401) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass der Flächenverbinder (423) einen ersten Abschnitt und einen zweiten Abschnitt aufweist, die zusammengeklappt in der Schaltvorrichtung (401) angeordnet sind, insbesondere wobei der erste Abschnitt mit dem ersten Halbleiterschalter (2) elektrisch leitend verbunden ist und der zweite Abschnitt mit dem zweiten Halbleiterschalter (12) elektrisch leitend verbunden ist. 5. Switching device (401) according to one of the preceding claims, characterized in that the surface connector (423) has a first section and a second section which are arranged folded up in the switching device (401), in particular the first section having the first semiconductor switch (2) is electrically conductively connected and the second section is electrically conductively connected to the second semiconductor switch (12).
6. Schaltvorrichtung (201, 301) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Schaltvorrichtung (201, 301) einen zweiten Flächenverbinder (233, 333) aufweist, wobei der Flächenverbinder (223, 323) auf dem ersten Halbleiterschalter (2) angeordnet ist und der zweite Flächenverbinder (233, 333) auf dem zweiten Halbleiterschalter (12) angeordnet ist, wobei der Flächenverbinder (223, 323) und der zweite Flächenverbinder (233, 333) den ersten Halbleiterschalter (2) und den zweiten Halbleiterschalter (12) elektrisch leitend miteinander verbinden, insbesondere wobei der Flächenverbinder (223, 323) und der zweite Flächenverbinder (233, 333) den ersten Halbleiterschalter (2) und den zweiten Halbleiterschalter (12) mechanisch miteinander verbinden. 6. Switching device (201, 301) according to one of the preceding claims, characterized in that the switching device (201, 301) has a second surface connector (233, 333), the surface connector (223, 323) on the first semiconductor switch (2) is arranged and the second surface connector (233, 333) is arranged on the second semiconductor switch (12), the surface connector (223, 323) and the second surface connector (233, 333) connecting the first semiconductor switch (2) and the second semiconductor switch (12 ) electrically conductively connect to one another, in particular the surface connector (223, 323) and the second surface connector (233, 333) mechanically connecting the first semiconductor switch (2) and the second semiconductor switch (12) to one another.
7. Schaltvorrichtung (101, 201, 301, 401) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Dicke des Flächenverbinders (123, 223, 323, 423) kleiner ist als 2 mm, und/oder dass der zweite Flächenverbinder (233, 333) eine größere Dicke aufweist als der Flächenverbinder (223, 323). 7. Switching device (101, 201, 301, 401) according to one of the preceding claims, characterized in that the thickness of the surface connector (123, 223, 323, 423) is less than 2 mm and/or that the second surface connector (233 , 333) has a greater thickness than the surface connector (223, 323).
8. Schaltvorrichtung (101, 201, 301, 401) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass mehrere erste Halbleiterschalter (2) nebeneinander auf der ersten Stromschiene (6) angeordnet sind und mehrere zweite Halbleiterschalter (12) nebeneinander auf der zweiten Stromschiene (16) angeordnet sind. 8. Switching device (101, 201, 301, 401) according to one of the preceding claims, characterized in that a plurality of first semiconductor switches (2) are arranged next to one another on the first busbar (6) and a plurality of second semiconductor switches (12) are arranged next to one another on the second busbar (16) are arranged.
9. Schaltvorrichtung (101, 201, 301, 401) nach einem der vorhergehenden Ansprüche,
dadurch gekennzeichnet, dass die Schaltvorrichtung (101, 201, 301, 401) eine Vergussmasse (22) aufweist, wobei die Vergussmasse (22) die erste Stromschiene (6), die zweite Stromschiene (16), den ersten Halbleiterschalter (2), den zweiten Halbleiterschalter (12) und den Flächenverbinder (123, 223, 233, 323, 333, 423) zumindest teilweise umgibt, insbesondere wobei der Flächenverbinder (123, 223, 233, 323, 333, 423) aus der Vergussmasse (22) auskragt. 9. switching device (101, 201, 301, 401) according to any one of the preceding claims, characterized in that the switching device (101, 201, 301, 401) has a casting compound (22), the casting compound (22) the first busbar (6), the second busbar (16), the first semiconductor switch (2), the at least partially surrounds the second semiconductor switch (12) and the surface connector (123, 223, 233, 323, 333, 423), in particular the surface connector (123, 223, 233, 323, 333, 423) protruding from the casting compound (22).
10. Schaltvorrichtung (101, 201, 301, 401) nach Anspruch 5, dadurch gekennzeichnet, dass die erste Stromschiene (6) eine erste Ausnehmung (7) aufweist und/oder die zweite Stromschiene (16) eine zweite Ausnehmung (17) aufweist, wobei die erste Stromschiene (6) und die zweite Stromschiene (16) entgegengesetzt zueinander angeordnet sind, insbesondere wobei die erste Ausnehmung (7) und/oder die zweite Ausnehmung (17) von der Vergussmasse (22) beabstandet ist. 10. Switching device (101, 201, 301, 401) according to claim 5, characterized in that the first busbar (6) has a first recess (7) and/or the second busbar (16) has a second recess (17), the first busbar (6) and the second busbar (16) being arranged opposite one another, in particular the first recess (7) and/or the second recess (17) being at a distance from the casting compound (22).
11. Elektrischer Energiespeicher aufweisend eine Schaltvorrichtung (101, 201, 301, 401) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Schaltvorrichtung (101, 201, 301, 401) als elektrische Trennvorrichtung ausgeführt ist. 11. Electrical energy store having a switching device (101, 201, 301, 401) according to one of the preceding claims, characterized in that the switching device (101, 201, 301, 401) is designed as an electrical disconnecting device.
12. Vorrichtung, insbesondere Fahrzeug, dadurch gekennzeichnet, dass die Vorrichtung einen elektrischen Energiespeicher gemäß dem vorhergehenden Anspruch aufweist. 12. Device, in particular vehicle, characterized in that the device has an electrical energy store according to the preceding claim.
13. Verfahren zum Herstellen einer Schaltvorrichtung (101, 201, 301, 401) nach einem der Ansprüche 1 bis 10, dadurch gekennzeichnet, dass zuerst die ersten Halbleiterschalter (2) mit der ersten Stromschiene (6) verbunden werden und die zweiten Halbleiterschalter (12) mit der zweiten Stromschiene (16) verbunden werden,
wobei danach ein Flächenverbinder (223, 233, 323, 333, 423) mit dem ersten Halbleiterschalter (2) und/oder dem zweiten Halbleiterschalter (12) elektrisch leitend und mechanisch, insbesondere stoffschlüssig, verbunden wird, wobei anschließend die erste Stromschiene (6) mittels des Flächenverbinders (223, 233, 323, 333, 423) mechanisch, insbesondere stoffschlüssig, mit der zweiten13. Method for producing a switching device (101, 201, 301, 401) according to one of claims 1 to 10, characterized in that first the first semiconductor switches (2) are connected to the first busbar (6) and the second semiconductor switches (12 ) are connected to the second busbar (16), whereafter a surface connector (223, 233, 323, 333, 423) is electrically conductively and mechanically, in particular cohesively, connected to the first semiconductor switch (2) and/or the second semiconductor switch (12), the first busbar (6) then being connected by means of the surface connector (223, 233, 323, 333, 423) mechanically, in particular materially, with the second
Stromschiene (16) verbunden wird. Power rail (16) is connected.
14. Verfahren zum Herstellen einer Schaltvorrichtung (401) nach Anspruch 13, dadurch gekennzeichnet, dass der Flächenverbinder (423) zum Verbinden der ersten Stromschiene (6) mit der zweiten Stromschiene (16) zusammengeklappt wird.
14. The method for producing a switching device (401) according to claim 13, characterized in that the surface connector (423) for connecting the first busbar (6) to the second busbar (16) is folded together.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102020214912.7A DE102020214912A1 (en) | 2020-11-27 | 2020-11-27 | Switching device, electrical energy store, device and method for producing a switching device |
DE102020214912.7 | 2020-11-27 |
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WO2022112233A1 true WO2022112233A1 (en) | 2022-06-02 |
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PCT/EP2021/082651 WO2022112233A1 (en) | 2020-11-27 | 2021-11-23 | Switching device and method for producing a switching device |
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WO (1) | WO2022112233A1 (en) |
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DE102023105344B3 (en) | 2023-03-03 | 2024-07-04 | Seg Automotive Germany Gmbh | Half-bridge switch arrangement |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69415252T2 (en) | 1993-09-07 | 1999-05-27 | Delco Electronics Corp., Kokomo, Ind. | High performance semiconductor switching module |
WO2004006423A2 (en) | 2002-07-04 | 2004-01-15 | Valeo Equipements Electriques Moteur | Control and power module for integrated alternator-starter |
US20080061396A1 (en) * | 2006-09-07 | 2008-03-13 | Sanjay Havanur | Stacked dual MOSFET package |
US20090189273A1 (en) * | 2008-01-28 | 2009-07-30 | Yong Liu | Multiphase synchronous buck converter |
US20090215230A1 (en) * | 2008-02-22 | 2009-08-27 | Renesas Technology Corp. | Manufacturing method of semiconductor device |
DE112008001657T5 (en) | 2007-07-27 | 2010-06-10 | Fairchild Semiconductor Corp. | Integrated power device package and dual-sided cooling module and method of manufacture |
DE102011088250A1 (en) * | 2011-12-12 | 2013-06-13 | Robert Bosch Gmbh | Power module for an electric drive |
-
2020
- 2020-11-27 DE DE102020214912.7A patent/DE102020214912A1/en active Pending
-
2021
- 2021-11-23 WO PCT/EP2021/082651 patent/WO2022112233A1/en active Application Filing
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69415252T2 (en) | 1993-09-07 | 1999-05-27 | Delco Electronics Corp., Kokomo, Ind. | High performance semiconductor switching module |
WO2004006423A2 (en) | 2002-07-04 | 2004-01-15 | Valeo Equipements Electriques Moteur | Control and power module for integrated alternator-starter |
US20080061396A1 (en) * | 2006-09-07 | 2008-03-13 | Sanjay Havanur | Stacked dual MOSFET package |
DE112008001657T5 (en) | 2007-07-27 | 2010-06-10 | Fairchild Semiconductor Corp. | Integrated power device package and dual-sided cooling module and method of manufacture |
US20090189273A1 (en) * | 2008-01-28 | 2009-07-30 | Yong Liu | Multiphase synchronous buck converter |
US20090215230A1 (en) * | 2008-02-22 | 2009-08-27 | Renesas Technology Corp. | Manufacturing method of semiconductor device |
DE102011088250A1 (en) * | 2011-12-12 | 2013-06-13 | Robert Bosch Gmbh | Power module for an electric drive |
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