WO2022104966A1 - 一种坩埚可移动的分子束外延用束源炉 - Google Patents
一种坩埚可移动的分子束外延用束源炉 Download PDFInfo
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- WO2022104966A1 WO2022104966A1 PCT/CN2020/136111 CN2020136111W WO2022104966A1 WO 2022104966 A1 WO2022104966 A1 WO 2022104966A1 CN 2020136111 W CN2020136111 W CN 2020136111W WO 2022104966 A1 WO2022104966 A1 WO 2022104966A1
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- Prior art keywords
- crucible
- thermocouple
- movable
- beam source
- heat shielding
- Prior art date
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- 238000001451 molecular beam epitaxy Methods 0.000 title claims abstract description 28
- 230000007246 mechanism Effects 0.000 claims abstract description 21
- 238000001816 cooling Methods 0.000 claims description 15
- 239000000498 cooling water Substances 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 230000003028 elevating effect Effects 0.000 claims 2
- 238000007789 sealing Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 18
- 230000008569 process Effects 0.000 description 16
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 10
- 230000033001 locomotion Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 230000006872 improvement Effects 0.000 description 9
- 238000012423 maintenance Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000009434 installation Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000002893 slag Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B23/066—Heating of the material to be evaporated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
Definitions
- the invention relates to semiconductor equipment, in particular to a beam source furnace for molecular beam epitaxy with a movable crucible.
- Molecular beam epitaxy is to spray the components and doped atoms or molecules that constitute the crystal from the beam source furnace to the substrate at a certain thermal motion speed and a certain composition ratio in an ultra-high vacuum environment.
- the beam source furnace is an important part of the molecular beam epitaxy equipment.
- the beam source furnace obtains a stable and controllable evaporation beam by heating the source material in the crucible.
- the movable beam source furnace can extract and isolate the beam source furnace from the ultra-high vacuum environment through the gate valve without emptying the entire growth chamber. After the beam source furnace maintenance or source material filling is completed, the beam source furnace is completed. The furnace is returned to the growth chamber, which is kept under ultra-high vacuum throughout the process, avoiding weeks of pump down and bake time. Conversely, when the growth chamber is maintained, the beam source furnace can also be pulled out and isolated, so that the beam source furnace is not exposed to the atmosphere during the cavity inflation process, thereby effectively protecting the source material in the beam source furnace from oxidation and pollution.
- the existing movable beam source furnace generally realizes the switching between the process position and the maintenance position through the bellows and the guide rail drive mechanism.
- the guide rail drive mechanism sends the beam source furnace to the process position, the bellows is compressed; The bellows stretch when pulled out to the maintenance position.
- the movement stroke will be very long, and the long stroke requires strict angular deviation of the guide rail drive mechanism.
- the overall movement of the beam source furnace results in a larger diameter of the bellows and larger space in the tube, which not only makes the bellows expensive, but also needs to withstand the huge pressure difference between the internal vacuum environment and the external atmospheric environment when moving.
- the reliability of the bellows has brought a greater test.
- the beam source furnace is generally installed obliquely upward, and slag (such as debris or particles) in the growth chamber may fall into the bellows, which may cause damage to the bellows.
- the prior art proposes a movable beam source furnace that does not need to use a bellows, and realizes the overall movement of the beam source furnace in a fixed cylinder, thereby saving space and cost.
- the disadvantage of this technical solution is that when the beam source furnace moves, the power cord and the thermocouple wire also move, so a complex cable winding device needs to be designed, and the cable is caused by the repeated pay-off and take-up process. Changes in tension will affect the life of the cable, thereby reducing the reliability of the entire design.
- the technical problem to be solved by the present invention is to overcome the deficiencies of the prior art, and to provide a beam source furnace for molecular beam epitaxy with a simple structure, low cost, high reliability and small space occupation.
- the present invention adopts the following technical solutions:
- a beam source furnace for molecular beam epitaxy with a movable crucible comprising a crucible bracket, an installation flange, a heat shielding cylinder arranged on the upper side of the installation flange, a gate valve arranged on the lower side of the installation flange, and a gate valve arranged at the lower side of the gate valve.
- the outer cylinder, and a lift driving mechanism for driving the crucible bracket to move between the heat shielding cylinder and the outer cylinder the heat shielding cylinder is provided with a heater, the outer cylinder is connected with a vacuum pump, and the lifting driving mechanism Sealed connection with the outer cylinder.
- the inner wall of the heat shielding cylinder is provided with a water cooling layer
- the inner side of the water cooling layer is provided with a heat shielding layer
- the heater is located inside the heat shielding layer.
- the side wall of the mounting flange is provided with a cooling water interface and an electrical feedthrough, the water cooling layer is communicated with the cooling water source through the cooling water interface, and the heater is connected through the electrical feedthrough. connected to the power supply.
- a connecting cylinder is also provided between the mounting flange and the gate valve, a cooling water interface is provided on the side wall of the mounting flange, and a power feeder is provided on the side wall of the connecting cylinder
- the water cooling layer communicates with the cooling water source through the cooling water interface, and the heater communicates with the power source through the electrical feedthrough.
- thermocouple is provided in the heat shielding cylinder, and a fixed thermocouple feedthrough is provided on the side wall of the connecting cylinder, and the fixed thermocouple is connected to the temperature through the fixed thermocouple feedthrough. connected to the control instrument.
- thermocouple is arranged in the heat shielding cylinder, a fixed thermocouple feedthrough is arranged on the side wall of the mounting flange, and the fixed thermocouple is connected to the fixed thermocouple through the fixed thermocouple feedthrough.
- the temperature control instrument is connected.
- the lift drive mechanism is a magnetic coupling drive mechanism.
- a movable thermocouple is provided on the crucible bracket, and the working end of the movable thermocouple is in contact with the crucible.
- the crucible holder is provided with a feedthrough of a moving thermocouple, and the moving thermocouple communicates with a temperature control instrument through the feedthrough of the moving thermocouple.
- the lift drive mechanism includes a drive guide rail and a bellows tube, the upper end of the bellows tube is sealedly connected to the bottom of the outer cylinder, and the lower end of the bellows tube is sealedly connected to the bottom of the crucible bracket.
- the advantages of the present invention lie in that the beam source furnace for molecular beam epitaxy with movable crucible disclosed in the present invention can move as a whole compared to the existing beam source furnace, and only the crucible and the crucible bracket pass through the mounting flange. , gate valve, etc. are extended and retracted under the drive of the lift drive device, so as to realize the switching between the process position and the maintenance position.
- the whole process does not damage the ultra-high vacuum environment of the growth chamber, reduces the downtime and improves the process efficiency; crucible
- the heater and other parts are still fixed in the heat shielding cylinder, thus avoiding the design of long-stroke large-diameter bellows or complicated cable winding device, saving space, reducing cost, and improving movable Beam source furnace reliability.
- FIG. 1 is a schematic structural diagram of the first embodiment of the beam source furnace for molecular beam epitaxy with a movable crucible of the present invention located at the process position.
- FIG. 2 is a schematic structural diagram of the heat shielding cylinder in the present invention.
- FIG. 3 is a schematic structural diagram of the first embodiment of the beam source furnace for molecular beam epitaxy with a movable crucible of the present invention being retracted from a process position to a maintenance position.
- FIG. 4 is a schematic structural diagram of the second embodiment of the beam source furnace for molecular beam epitaxy with movable crucible located at the process position.
- FIG. 5 is a schematic structural diagram of the third embodiment of the beam source furnace for molecular beam epitaxy with movable crucible located at the process position.
- FIG. 6 is a schematic structural diagram of the third embodiment of the beam source furnace for molecular beam epitaxy with movable crucible retracted from a process position to a maintenance position.
- the beam source furnace for molecular beam epitaxy with a movable crucible in this embodiment includes a heat shielding cylinder 2, a support Rod 25 (used to provide support for heat shielding cylinder 2, of course, in other embodiments, other components can also be used to provide support for heat shielding cylinder 2), crucible 8, crucible bracket 5, mounting flange 1, gate valve 3, Fixed thermocouple 22, heater 21, heat shielding layer 24, water cooling layer 23, connecting cylinder 7, electric feedthrough 12, fixed thermocouple feedthrough 13, outer cylinder 4, vacuum pump interface 41, magnetic coupling drive mechanism.
- the beam source furnace is connected to the growth chamber through an installation flange 1 , the middle opening of the installation flange 1 , and the crucible 8 and the crucible holder 5 can be moved up and down through the middle opening of the installation flange 1 .
- the part of the beam source furnace located in the growth chamber is shown in FIG. 2 .
- the heat shielding cylinder 2 is fixed on the mounting flange 1 through the support rod 25 , and the heat shielding cylinder 2 provides support and protection for its internal structure.
- a water cooling layer 23 , a heat shielding layer 24 , a heater 21 , and a fixed thermocouple 22 are sequentially arranged inside the heat shielding cylinder 2 from the edge to the center.
- the water cooling layer 23 can be in the form of integrated water cooling, or in the form of one or more discrete water cooling, which is used to protect the beam source furnace itself and other components in the molecular beam epitaxy equipment from being affected by high temperature.
- the heat shielding layer 24 can be one or more layers of high temperature resistant metal materials, including but not limited to tantalum, molybdenum, tungsten, etc.
- the heat shielding layer 24 is used to reflect the heat radiation of the heater 21, improve the internal heating efficiency, and Reduce external heat dissipation.
- the heater 21 forms an evaporation beam by heating the source material in the crucible 8, and the heater can be a PBN/PG/PBN (pyrolytic boron nitride/pyrolytic graphite/pyrolytic boron nitride) composite material, or other resistant materials.
- High temperature metal materials including but not limited to tantalum, molybdenum, tungsten, etc.
- the fixed thermocouple 22 is close to the crucible 8 without hindering the movement of the crucible 8 and the crucible holder 5.
- the fixed thermocouple 22 can be one or more, and is used to measure the temperature corresponding to different positions of the crucible 8. In this embodiment, two are used.
- the thermocouples 22 are fixed to measure the corresponding temperatures of the top and bottom regions of the crucible 8, respectively.
- the lower end of the heat shielding cylinder 2 is opened so that the crucible 8 and the crucible holder 5 can be drawn out from the opening at the lower end of the heat shielding cylinder 2 .
- the upper end of the heat shielding cylinder 2 is opened, so that the evaporating beam flows through the upper end of the heat shielding cylinder 2 and is ejected.
- the crucible 8 can be made of PBN (Pyrolytic Boron Nitride) material
- the crucible 8 can be equipped with an insert (not shown in the figure) to guide and improve the shape of the evaporation beam
- the insert can be made of PBN (Pyrolytic Boron Nitride) material .
- the crucible holder 5 is composed of multiple parts.
- the crucible holder at the top can be made of insulating materials such as PBN (pyrolytic boron nitride) and ceramics.
- the high-temperature area at the upper end can be made of high-temperature resistant materials such as tantalum, molybdenum, and tungsten. Parts in non-high temperature areas can be made of stainless steel.
- the connecting cylinder 7 connects the mounting flange 1 and the gate valve 3 , the connecting cylinder 7 is hollow, and the crucible 8 and the crucible holder 5 can be moved through the connecting cylinder 7 .
- the electrical feedthrough 12 , the fixed thermocouple feedthrough 13 , and the cooling water interface 11 are connected from the mounting flange 1 or the connecting cylinder 7 .
- the heater 21 is connected to the electrical feedthrough 12 through a power cord (not shown in the figure) and then to an external power source, and the fixed thermocouple 22 is connected to the fixed thermocouple feedthrough 13 through a thermocouple wire (not shown in the figure) and then connected to an external thermostat.
- thermocouple 22 Since the heater 21 and the fixed thermocouple 22 do not move with the crucible 8 and the crucible holder 5, the power cord and the thermocouple wire do not need to be stretched, so there is no need to design a complicated cable winding device, thereby further improving the reliability of the system.
- a vacuum pump interface 41 is provided on the outer cylinder 4 , and a vacuum pump group is connected to the outer cylinder 4 through the vacuum pump interface 41 , so that the outer cylinder 4 can be independently inflated and pumped.
- a lift drive mechanism 6 is installed at the bottom of the outer cylinder 4.
- the lift drive mechanism 6 is a magnetic coupling drive mechanism.
- the magnetic coupling drive mechanism drives the crucible bracket 5 and the crucible 8 placed thereon to move. Precise positioning and position indication function.
- the gate valve 3 can realize the isolation of the outer cylinder 4 and the growth chamber.
- the gate valve is opened, and the growth chamber and the outer cylinder 4 are in the same vacuum degree; the crucible 8 and the crucible holder are in the same vacuum degree;
- the gate valve is closed, and the outer cylinder 4 can be independently inflated and pumped.
- the source material filling operation process is as follows: the crucible 8 and the crucible holder 5 are retracted to the maintenance position - the gate valve is closed - the outer cylinder 4 is inflated to atmospheric pressure - the outer cylinder 4 is removed from the gate valve - taken from the crucible holder 5 Lower crucible 8 - source material filling - put crucible 8 back on crucible holder 5 - reconnect outer cylinder 4 to gate valve - pump outer cylinder 4 to proper vacuum - open gate valve - crucible 8 And the crucible holder 5 is extended to the process position.
- FIG. 4 shows another embodiment of the beam source furnace for molecular beam epitaxy with movable crucible of the present invention.
- the structure and principle of this embodiment are basically the same as those of Embodiment 1. The difference is that no additional design is used in this embodiment.
- the connecting cylinder 7, the mounting flange 1 is directly connected to the gate valve 3, the electrical feedthrough 12, the fixed thermocouple feedthrough 13, and the cooling water interface 11 are connected from the side of the mounting flange 1, and the structure is more compact.
- the movement strokes of the crucible 8 and the crucible holder 5 are further shortened, which saves space and reduces costs.
- FIG. 5 to 6 show another embodiment of the beam source furnace for molecular beam epitaxy with a movable crucible of the present invention.
- this embodiment proposes a drive rail 61 .
- the crucible and bellows 62 can move the beam source furnace.
- This embodiment includes two types of thermocouples, the fixed thermocouple 22 and the movable thermocouple 51 .
- the fixed thermocouple 22 is fixed in the heat shielding cylinder 2 and does not move with the crucible 8 and the crucible bracket 5.
- the fixed thermocouple 22 can be one or more, and is used for non-contact measurement of the temperature corresponding to different positions of the crucible 8, the same as the embodiment. 1.
- the mobile thermocouple 51 is usually a piece, and its working end protrudes from the top of the crucible holder 5 and is in direct contact with the bottom of the crucible 8, so the actual temperature at the bottom of the crucible 8 can be measured more accurately, and the mobile thermocouple 51 passes through the crucible holder 5.
- the bottom moving thermocouple feedthrough 52 is connected to an external temperature control meter.
- thermocouple 51 involves movement of the thermocouple wire, so this problem is solved by driving the guide rail 61 and the bellows 62 .
- the bellows 62 is compressed.
- the bellows 62 is stretched.
- the movement stroke of the device is smaller, and the bellows 62
- the required diameter is smaller, the risk of slag falling into the bellows 62 is smaller, the cost of the system is lower, and the reliability is higher.
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Abstract
一种坩埚可移动的分子束外延用束源炉,包括坩埚托架(5)、安装法兰(1)、设于安装法兰(1)上侧的热屏蔽筒(2)、设于安装法兰(1)下侧的闸阀(3)、设于闸阀(3)下侧的外筒(4)、以及用于带动坩埚托架(5)在热屏蔽筒(2)和外筒(4)之间移动的升降驱动机构(6),热屏蔽筒(2)内设有加热器(21),外筒(4)连接有真空泵,升降驱动机构(6)与外筒(4)密封连接。该束源炉具有结构简单、成本低、可靠性高、占用空间少等优点。
Description
本发明涉及半导体设备,尤其涉及一种坩埚可移动的分子束外延用束源炉。
分子束外延(MBE)是在超高真空环境下,把构成晶体的各组分和掺杂的原子或分子,以一定的热运动速度、按一定的成分比例从束源炉中喷射到衬底表面上进行外延生长来制备单晶薄膜的一种方法。其中束源炉是分子束外延设备的重要组成部分,束源炉通过加热坩埚内的源材料来获得稳定可控的蒸发束流。
可移动束源炉可以在不排空整个生长腔室的前提下,通过闸阀将束源炉从超高真空环境中抽出和隔离,在完成束源炉维护或源材料填充后,再将束源炉送回生长腔室,整个过程生长腔室一直保持在超高真空状态,从而避免了长达几周的抽气与烘烤时间。反过来,进行生长腔室维护时,也可将束源炉抽出和隔离,使腔体充气过程中束源炉不暴露大气,从而有效保护束源炉中的源材料不受氧化和污染。
现有可移动束源炉一般通过波纹管和导轨驱动机构来实现工艺位置与维护位置的切换,导轨驱动机构将束源炉送入到工艺位置时,波纹管压缩;导轨驱动机构将束源炉抽出到维护位置时,波纹管拉伸。然而要实现束源炉整体移动,运动行程会很长,长行程对导轨驱动机构的角度偏差要求严格。束源炉整体移动导致波纹管所需口径较大、管内空间较大,不仅使得波纹管造价昂贵,波纹管在移动时还需要承受住内部真空环境与外部大气环境之间巨大的压力差,对波纹管的可靠性带来了较大的考验。同时束源炉一般斜向上安装,生长腔室内的料渣(例如碎片或颗粒)可能掉入波纹管内,从而可能引起波纹管的损坏。
为此,现有技术提出了一种无需采用波纹管的可移动束源炉,在一固定的筒体内实现束源炉的整体移动,从而节约空间与成本。该技术方案的不足之处在于:束源炉移动时,电源线和热电偶导线也随之移动,因此需要设计复杂的线缆卷绕装置,且线缆在反复放线与收线过程中引起的张力变化将影响线缆的使用寿命,从而降低了整个设计的可靠性。
【发明内容】
本发明要解决的技术问题是克服现有技术的不足,提供一种结构简单、成本低、可靠性高、占用空间少的坩埚可移动的分子束外延用束源炉。
为解决上述技术问题,本发明采用以下技术方案:
一种坩埚可移动的分子束外延用束源炉,包括坩埚托架、安装法兰、设于安装法兰上侧的热屏蔽筒、设于安装法兰下侧的闸阀、设于闸阀下侧的外筒、以及用于带动坩埚托架在热屏蔽筒和外筒之间移动的升降驱动机构,所述热屏蔽筒内设有加热器,所述外筒连接有真空泵,所述升降驱动机构与所述外筒密封连接。
作为上述技术方案的进一步改进:所述热屏蔽筒内壁设有水冷层,所述水冷层内侧设有热屏蔽层,所述加热器位于所述热屏蔽层内侧。
作为上述技术方案的进一步改进:所述安装法兰侧壁上设有冷却水接口和电馈通,所述水冷层通过所述冷却水接口与冷却水源连通,所述加热器通过所述电馈通与电源连通。
作为上述技术方案的进一步改进:所述安装法兰与所述闸阀之间还设有连接筒,所述安装法兰侧壁上设有冷却水接口,所述连接筒侧壁上设有电馈通,所述水冷层通过所述冷却水接口与冷却水源连通,所述加热器通过所述电馈通与电源连通。
作为上述技术方案的进一步改进:所述热屏蔽筒内设有固定热电偶,所述连接筒侧壁上设有固定热电偶馈通,所述固定热电偶通过所述固定热电偶馈通与温控仪表连通。
作为上述技术方案的进一步改进:所述热屏蔽筒内设有固定热电偶,所述安装法兰侧壁上设有固定热电偶馈通,所述固定热电偶通过所述固定热电偶馈通与温控仪表连通。
作为上述技术方案的进一步改进:所述升降驱动机构为磁力耦合驱动机构。
作为上述技术方案的进一步改进:所述坩埚托架上设有移动热电偶,所述移动热电偶工作端与坩埚接触。
作为上述技术方案的进一步改进:所述坩埚托架上设有移动热电偶馈通,所述移动热电偶通过所述移动热电偶馈通与温控仪表连通。
作为上述技术方案的进一步改进:所述升降驱动机构包括驱动导轨和波纹管,所述波纹管上端与所述外筒底部密封连接,所述波纹管下端与坩埚托架底部密封连接。
与现有技术相比,本发明的优点在于:本发明公开的坩埚可移动的分子束外延用束源炉,相比现有的束源炉整体移动,仅坩埚及坩埚托架通过安装法兰、闸阀等在升降驱动装置的带动下伸出和缩回,从而实现工艺位置与维护位置的切换,整个过程不破坏生长腔室的超高真空环境,减少了停机时间,提高了工艺效率;坩埚及坩埚托架移动时,加热器等其他部分仍然固定在热屏蔽筒中,从而避免了长行程大口径波纹管或复杂线缆卷绕装置设计,节约了空间,降低了成本,同时提升了可移动束源炉的可靠性。
图1是本发明坩埚可移动的分子束外延用束源炉实施例一位于工艺位置的结构示意图。
图2是本发明中的热屏蔽筒的结构示意图。
图3是本发明坩埚可移动的分子束外延用束源炉实施例一从工艺位置回缩到维护位置的结构示意图。
图4是本发明坩埚可移动的分子束外延用束源炉实施例二位于工艺位置的结构示意图。
图5是本发明坩埚可移动的分子束外延用束源炉实施例三位于工艺位置的结构示意图。
图6是本发明坩埚可移动的分子束外延用束源炉实施例三从工艺位置回缩到维护位置的结构示意图。
图中各标号表示:1、安装法兰;11、冷却水接口;12、电馈通;13、固定热电偶馈通;2、热屏蔽筒;21、加热器;22、固定热电偶;23、水冷层;24、热屏蔽层;25、支撑杆;3、闸阀;4、外筒;41、真空泵接口;5、坩埚托架;51、移动热电偶;52、移动热电偶馈通;6、升降驱动机构;61、驱动导轨;62、波纹管;7、连接筒;8、坩埚。
以下结合说明书附图和具体实施例对本发明作进一步详细说明。
实施例1
图1至图3示出了本发明坩埚可移动的分子束外延用束源炉的一种实施例,本实施例的坩埚可移动的分子束外延用束源炉,包括热屏蔽筒2、支撑杆25(用于为热屏蔽筒2提供支撑,当然在其他实施例中,也可采用其他部件为热屏蔽筒2提供支撑)、坩埚8、坩埚托架5、安装法兰1、闸阀3、固定热电偶22、加热器21、热屏蔽层24、水冷层23、连接筒7、电馈通12、固定热电偶馈通13、外筒4、真空泵接口41、磁力耦合驱动机构。
束源炉通过安装法兰1与生长腔室连接,安装法兰1中间开口,坩埚8及坩埚托架5可以通过安装法兰1中间开口进行上下移动。
束源炉位于生长腔室内的部分如图2所示,热屏蔽筒2通过支撑杆25固定在安装法兰1上,热屏蔽筒2为其内部的结构提供支撑与保护。热屏蔽筒2内部从边缘向中心依次设置有水冷层23、热屏蔽层24、加热器21、固定热电偶22,各部件间可通过绝缘支架(图中未示出)固定、隔离。水冷层23可为集成水冷形式,或为一路或多路的分立水冷形式,用于保护束源炉本身和分子束外延设备内的其他部件不受高温影响。热屏蔽层24可为一层或多层的耐高温金属材料,包括但不限于钽、钼、钨等,热屏蔽层24用于反射加热器21的热辐射,提高对内的加热效率,并减少对外的热量扩散。加热器21通过加热坩埚8中的源材料来形成蒸发束流,加热器可为PBN/PG/PBN(热解氮化硼/热解石墨/热解氮化 硼)复合材料,或为其他耐高温金属材料,包括但不限于钽、钼、钨等。固定热电偶22靠近坩埚8,而不阻碍坩埚8及坩埚托架5移动,固定热电偶22可为一支或多支,用于测量坩埚8不同位置对应的温度,本实施例中采用两支固定热电偶22,分别测量坩埚8顶部和底部区域对应的温度。
热屏蔽筒2下端开口,以便坩埚8及坩埚托架5从热屏蔽筒2下端开口抽出。热屏蔽筒2上端开口,以便蒸发束流通过热屏蔽筒2上端开***出。坩埚8可为PBN(热解氮化硼)材料,坩埚8口可选配嵌入件(图中未示出)来引导改善蒸发束流形状,嵌入件可为PBN(热解氮化硼)材料。坩埚托架5为多部件组合而成,最顶部的坩埚托部分可采用PBN(热解氮化硼)、陶瓷等绝缘材料,上端高温区域部分可采用钽、钼、钨等耐高温材料,下端非高温区域部分可采用不锈钢材料。
连接筒7连接安装法兰1与闸阀3,连接筒7中空,坩埚8及坩埚托架5可通过连接筒7进行移动。电馈通12、固定热电偶馈通13、冷却水接口11从安装法兰1上或连接筒7上接出。加热器21通过电源线(图中未示出)连接至电馈通12再连接至外部电源,固定热电偶22通过热电偶导线(图中未示出)连接至固定热电偶馈通13再连接至外部温控仪表。由于加热器21和固定热电偶22不随坩埚8及坩埚托架5移动,电源线和热电偶导线无须伸缩,因此不必设计复杂的线缆卷绕装置,从而进一步提高了***的可靠性。
外筒4上设置真空泵接口41,通过真空泵接口41外接真空泵组,可对外筒4进行独立的充气和抽气操作。外筒4底部安装有升降驱动机构6,升降驱动机构6为磁力耦合驱动机构,磁力耦合驱动机构带动坩埚托架5及置于其上的坩埚8移动,可采用手动或电机驱动方式,并具备精确定位与位置指示功能。
通过闸阀3可以实现外筒4与生长腔室的隔离,坩埚8及坩埚托架5向上伸出处于工艺位置时,闸阀打开,生长腔室与外筒4处于同一真空度;坩埚8及坩埚托架5向下缩回处于维护位置时,闸阀关闭,可对外筒4进行独立的充气和抽气操作。源材料填充操作流程如下:坩埚8及坩埚托架5缩回至维护位置——关闭闸阀——外筒4充气至大气压——从闸阀上拆卸下外筒4——从坩埚托架5上取下坩埚8——源材料填充——将坩埚8放回至坩埚托架5上——将外筒4重新连接至闸阀——外筒4抽气至合适真空度——打开闸阀——坩埚8及坩埚托架5伸出至工艺位置。
实施例2
图4示出了本发明坩埚可移动的分子束外延用束源炉的另一种实施例,本实施例与实施例1结构及原理基本相同,不同之处在于:本实施例中不设计额外的连接筒7,安装法兰1直接连接闸阀3,电馈通12、固定热电偶馈通13、冷却水接口11从安装法兰1侧面 接出,结构更为紧凑,在实施例1的基础上,进一步缩短了坩埚8及坩埚托架5的运动行程,节约空间,降低成本。
实施例3
图5至图6示出了本发明坩埚可移动的分子束外延用束源炉的另一种实施例,为了使热电偶能够直接测量坩埚8底部温度,本实施例提出一种包含驱动导轨61和波纹管62的坩埚可移动束源炉。本实施例包含两类热电偶,固定热电偶22与移动热电偶51。固定热电偶22固定在热屏蔽筒2内,不随坩埚8及坩埚托架5移动,固定热电偶22可为一支或多支,用于非接触测量坩埚8不同位置对应的温度,同实施例1。移动热电偶51通常为一支,其工作端从坩埚托架5顶部伸出与坩埚8底部直接接触,因此能更准确地测量出坩埚8底部的实际温度,移动热电偶51通过坩埚托架5底部的移动热电偶馈通52连接至外部温控仪表。
移动热电偶51涉及热电偶导线的移动,因此通过驱动导轨61和波纹管62来解决这个问题。坩埚托架5及置于其上的坩埚8在驱动导轨61的带动下向上伸出时,波纹管62压缩。坩埚托架5及置于其上的坩埚8在驱动导轨61的带动下向下缩回时,波纹管62拉伸。
与现有包含波纹管和驱动导轨的可移动束源炉不同,本实施例中由于仅坩埚8及坩埚托架5移动,相比束源炉整体移动,装置运动行程较小,且波纹管62所需口径较小,料渣掉入引起波纹管62损坏的风险更小,***的成本更低,可靠性更高。
虽然本发明已以较佳实施例揭露如上,然而并非用以限定本发明。任何熟悉本领域的技术人员,在不脱离本发明技术方案范围的情况下,都可利用上述揭示的技术内容对本发明技术方案做出许多可能的变动和修饰,或修改为等同变化的等效实施例。因此,凡是未脱离本发明技术方案的内容,依据本发明技术实质对以上实施例所做的任何简单修改、等同变化及修饰,均应落在本发明技术方案保护的范围内。
Claims (10)
- 一种坩埚可移动的分子束外延用束源炉,其特征在于:包括坩埚托架(5)、安装法兰(1)、设于安装法兰(1)上侧的热屏蔽筒(2)、设于安装法兰(1)下侧的闸阀(3)、设于闸阀(3)下侧的外筒(4)、以及用于带动坩埚托架(5)在热屏蔽筒(2)和外筒(4)之间移动的升降驱动机构(6),所述热屏蔽筒(2)内设有加热器(21),所述外筒(4)连接有真空泵,所述升降驱动机构(6)与所述外筒(4)密封连接。
- 根据权利要求1所述的坩埚可移动的分子束外延用束源炉,其特征在于:所述热屏蔽筒(2)内壁设有水冷层(23),所述水冷层(23)内侧设有热屏蔽层(24),所述加热器(21)位于所述热屏蔽层(24)内侧。
- 根据权利要求2所述的坩埚可移动的分子束外延用束源炉,其特征在于:所述安装法兰(1)侧壁上设有冷却水接口(11)和电馈通(12),所述水冷层(23)通过所述冷却水接口(11)与冷却水源连通,所述加热器(21)通过所述电馈通(12)与电源连通。
- 根据权利要求2所述的坩埚可移动的分子束外延用束源炉,其特征在于:所述安装法兰(1)与所述闸阀(3)之间还设有连接筒(7),所述安装法兰(1)侧壁上设有冷却水接口(11),所述连接筒(7)侧壁上设有电馈通(12),所述水冷层(23)通过所述冷却水接口(11)与冷却水源连通,所述加热器(21)通过所述电馈通(12)与电源连通。
- 根据权利要求4所述的坩埚可移动的分子束外延用束源炉,其特征在于:所述热屏蔽筒(2)内设有固定热电偶(22),所述连接筒(7)侧壁上设有固定热电偶馈通(13),所述固定热电偶(22)通过所述固定热电偶馈通(13)与温控仪表连通。
- 根据权利要求3所述的坩埚可移动的分子束外延用束源炉,其特征在于:所述热屏蔽筒(2)内设有固定热电偶(22),所述安装法兰(1)侧壁上设有固定热电偶馈通(13),所述固定热电偶(22)通过所述固定热电偶馈通(13)与温控仪表连通。
- 根据权利要求1至6中任一项所述的坩埚可移动的分子束外延用束源炉,其特征在于:所述升降驱动机构(6)为磁力耦合驱动机构。
- 根据权利要求1至6中任一项所述的坩埚可移动的分子束外延用束源炉,其特征在于:所述坩埚托架(5)上设有移动热电偶(51),所述移动热电偶(51)工作端与坩埚(8)接触。
- 根据权利要求8所述的坩埚可移动的分子束外延用束源炉,其特征在于:所述坩埚托架(5)上设有移动热电偶馈通(52),所述移动热电偶(51)通过所述移动热电偶馈通(52)与温控仪表连通。
- 根据权利要求8所述的坩埚可移动的分子束外延用束源炉,其特征在于:所述升降驱动机构(6)包括驱动导轨(61)和波纹管(62),所述波纹管(62)上端与所述外筒(4)底部密封连接,所述波纹管(62)下端与坩埚托架(5)底部密封连接。
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CN112410871A (zh) | 2021-02-26 |
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EP4190946A1 (en) | 2023-06-07 |
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