WO2022097480A1 - Laminate for semi-additive manufacturing and printed wiring board using same - Google Patents
Laminate for semi-additive manufacturing and printed wiring board using same Download PDFInfo
- Publication number
- WO2022097480A1 WO2022097480A1 PCT/JP2021/038868 JP2021038868W WO2022097480A1 WO 2022097480 A1 WO2022097480 A1 WO 2022097480A1 JP 2021038868 W JP2021038868 W JP 2021038868W WO 2022097480 A1 WO2022097480 A1 WO 2022097480A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- silver
- base material
- silver particle
- conductive
- Prior art date
Links
- 239000000654 additive Substances 0.000 title claims abstract description 90
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 73
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 333
- 229910052709 silver Inorganic materials 0.000 claims abstract description 328
- 239000004332 silver Substances 0.000 claims abstract description 328
- 239000002245 particle Substances 0.000 claims abstract description 239
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 238000000034 method Methods 0.000 claims description 270
- 239000000463 material Substances 0.000 claims description 181
- 238000007747 plating Methods 0.000 claims description 131
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 124
- 229910052802 copper Inorganic materials 0.000 claims description 116
- 239000010949 copper Substances 0.000 claims description 116
- 229920005989 resin Polymers 0.000 claims description 107
- 239000011347 resin Substances 0.000 claims description 107
- 238000005530 etching Methods 0.000 claims description 84
- 125000000524 functional group Chemical group 0.000 claims description 38
- 239000003054 catalyst Substances 0.000 claims description 29
- 239000002270 dispersing agent Substances 0.000 claims description 25
- 238000006243 chemical reaction Methods 0.000 claims description 20
- 125000003700 epoxy group Chemical group 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 16
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 13
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 claims description 13
- 229920000642 polymer Polymers 0.000 claims description 12
- 230000000149 penetrating effect Effects 0.000 claims description 11
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 9
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 7
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 6
- 125000002339 acetoacetyl group Chemical group O=C([*])C([H])([H])C(=O)C([H])([H])[H] 0.000 claims description 6
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 claims description 5
- 125000000468 ketone group Chemical group 0.000 claims description 5
- 125000006353 oxyethylene group Chemical group 0.000 claims description 2
- 239000002648 laminated material Substances 0.000 claims 1
- 239000002253 acid Substances 0.000 abstract description 14
- 230000015572 biosynthetic process Effects 0.000 abstract description 12
- 238000013461 design Methods 0.000 abstract description 9
- 238000007788 roughening Methods 0.000 abstract description 8
- 239000004020 conductor Substances 0.000 abstract description 7
- 239000003513 alkali Substances 0.000 abstract description 5
- 238000012986 modification Methods 0.000 abstract description 3
- 230000004048 modification Effects 0.000 abstract description 3
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 abstract 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 428
- 239000002585 base Substances 0.000 description 149
- -1 polyethylene terephthalate Polymers 0.000 description 96
- 239000000243 solution Substances 0.000 description 84
- 150000001875 compounds Chemical class 0.000 description 57
- 239000010408 film Substances 0.000 description 57
- 239000006185 dispersion Substances 0.000 description 44
- 229920000647 polyepoxide Polymers 0.000 description 44
- 239000003822 epoxy resin Substances 0.000 description 43
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 42
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 42
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 40
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 37
- 239000007788 liquid Substances 0.000 description 37
- 239000002904 solvent Substances 0.000 description 37
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 36
- 238000004140 cleaning Methods 0.000 description 36
- 239000012948 isocyanate Substances 0.000 description 33
- 238000011282 treatment Methods 0.000 description 32
- 239000000203 mixture Substances 0.000 description 30
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 28
- 239000007864 aqueous solution Substances 0.000 description 28
- 229920003986 novolac Polymers 0.000 description 28
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 25
- 238000001035 drying Methods 0.000 description 25
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 24
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 24
- 150000002513 isocyanates Chemical class 0.000 description 23
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 22
- 229920001721 polyimide Polymers 0.000 description 21
- 230000001603 reducing effect Effects 0.000 description 21
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 20
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 20
- 238000010438 heat treatment Methods 0.000 description 20
- QQOWHRYOXYEMTL-UHFFFAOYSA-N triazin-4-amine Chemical group N=C1C=CN=NN1 QQOWHRYOXYEMTL-UHFFFAOYSA-N 0.000 description 19
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 18
- 238000000576 coating method Methods 0.000 description 18
- 239000002923 metal particle Substances 0.000 description 18
- 229910052763 palladium Inorganic materials 0.000 description 18
- 230000008569 process Effects 0.000 description 18
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 17
- 229920000877 Melamine resin Polymers 0.000 description 16
- 239000003795 chemical substances by application Substances 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 239000003960 organic solvent Substances 0.000 description 15
- 238000002156 mixing Methods 0.000 description 14
- 238000002360 preparation method Methods 0.000 description 14
- 239000000126 substance Substances 0.000 description 14
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 13
- 239000000178 monomer Substances 0.000 description 13
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 12
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 12
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 12
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 12
- 229910052759 nickel Inorganic materials 0.000 description 12
- 238000004381 surface treatment Methods 0.000 description 12
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 12
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 10
- 229920001228 polyisocyanate Polymers 0.000 description 10
- 239000005056 polyisocyanate Substances 0.000 description 10
- 239000011342 resin composition Substances 0.000 description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 9
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 9
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 9
- 125000003277 amino group Chemical group 0.000 description 9
- 239000002981 blocking agent Substances 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 9
- 239000003431 cross linking reagent Substances 0.000 description 9
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 9
- 235000019441 ethanol Nutrition 0.000 description 9
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 9
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 9
- 239000004094 surface-active agent Substances 0.000 description 9
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 8
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 8
- 229920002873 Polyethylenimine Polymers 0.000 description 8
- 125000003118 aryl group Chemical group 0.000 description 8
- 239000011889 copper foil Substances 0.000 description 8
- 239000003755 preservative agent Substances 0.000 description 8
- 230000002335 preservative effect Effects 0.000 description 8
- 229920000178 Acrylic resin Polymers 0.000 description 7
- 239000004925 Acrylic resin Substances 0.000 description 7
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 7
- 239000004640 Melamine resin Substances 0.000 description 7
- 238000000137 annealing Methods 0.000 description 7
- 238000009713 electroplating Methods 0.000 description 7
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 7
- 239000000523 sample Substances 0.000 description 7
- 238000005507 spraying Methods 0.000 description 7
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 239000002202 Polyethylene glycol Substances 0.000 description 6
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000007983 Tris buffer Substances 0.000 description 6
- 239000002518 antifoaming agent Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 238000010276 construction Methods 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- 239000000976 ink Substances 0.000 description 6
- 239000007791 liquid phase Substances 0.000 description 6
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 6
- 229920001515 polyalkylene glycol Polymers 0.000 description 6
- 229920001223 polyethylene glycol Polymers 0.000 description 6
- FVCSARBUZVPSQF-UHFFFAOYSA-N 5-(2,4-dioxooxolan-3-yl)-7-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C(C(OC2=O)=O)C2C(C)=CC1C1C(=O)COC1=O FVCSARBUZVPSQF-UHFFFAOYSA-N 0.000 description 5
- 230000002378 acidificating effect Effects 0.000 description 5
- 125000003368 amide group Chemical group 0.000 description 5
- 239000012736 aqueous medium Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000000805 composite resin Substances 0.000 description 5
- 239000011258 core-shell material Substances 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 238000005553 drilling Methods 0.000 description 5
- 239000000975 dye Substances 0.000 description 5
- 150000007524 organic acids Chemical class 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 5
- 239000000049 pigment Substances 0.000 description 5
- 238000009832 plasma treatment Methods 0.000 description 5
- 150000003839 salts Chemical class 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000012756 surface treatment agent Substances 0.000 description 5
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 4
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 4
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 4
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- 235000011054 acetic acid Nutrition 0.000 description 4
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 4
- 125000002723 alicyclic group Chemical group 0.000 description 4
- 239000003963 antioxidant agent Substances 0.000 description 4
- 235000006708 antioxidants Nutrition 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 4
- 238000007664 blowing Methods 0.000 description 4
- HDFRDWFLWVCOGP-UHFFFAOYSA-N carbonothioic O,S-acid Chemical compound OC(S)=O HDFRDWFLWVCOGP-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 229920001940 conductive polymer Polymers 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 229910000365 copper sulfate Inorganic materials 0.000 description 4
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 4
- 238000003851 corona treatment Methods 0.000 description 4
- 229930003836 cresol Natural products 0.000 description 4
- 238000004132 cross linking Methods 0.000 description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 4
- GHVNFZFCNZKVNT-UHFFFAOYSA-N decanoic acid Chemical compound CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 4
- 238000007865 diluting Methods 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 150000003949 imides Chemical group 0.000 description 4
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 4
- 239000005011 phenolic resin Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 230000000379 polymerizing effect Effects 0.000 description 4
- 229920001451 polypropylene glycol Polymers 0.000 description 4
- 239000012286 potassium permanganate Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000010992 reflux Methods 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- 150000003852 triazoles Chemical class 0.000 description 4
- 239000012808 vapor phase Substances 0.000 description 4
- GJYCVCVHRSWLNY-UHFFFAOYSA-N 2-butylphenol Chemical compound CCCCC1=CC=CC=C1O GJYCVCVHRSWLNY-UHFFFAOYSA-N 0.000 description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 3
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 3
- 240000007594 Oryza sativa Species 0.000 description 3
- 235000007164 Oryza sativa Nutrition 0.000 description 3
- SCKXCAADGDQQCS-UHFFFAOYSA-N Performic acid Chemical compound OOC=O SCKXCAADGDQQCS-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 239000006087 Silane Coupling Agent Substances 0.000 description 3
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 3
- 239000004480 active ingredient Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 230000032683 aging Effects 0.000 description 3
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 238000006266 etherification reaction Methods 0.000 description 3
- 235000019253 formic acid Nutrition 0.000 description 3
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000011256 inorganic filler Substances 0.000 description 3
- 229910003475 inorganic filler Inorganic materials 0.000 description 3
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 3
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical group OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 239000012046 mixed solvent Substances 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 150000002989 phenols Chemical class 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229920000573 polyethylene Polymers 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 description 3
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 3
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 3
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 3
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 3
- 230000003449 preventive effect Effects 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000003223 protective agent Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 230000007261 regionalization Effects 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 235000009566 rice Nutrition 0.000 description 3
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 239000002562 thickening agent Substances 0.000 description 3
- DHCDFWKWKRSZHF-UHFFFAOYSA-L thiosulfate(2-) Chemical compound [O-]S([S-])(=O)=O DHCDFWKWKRSZHF-UHFFFAOYSA-L 0.000 description 3
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 3
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 3
- 229920002554 vinyl polymer Polymers 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 2
- GVJHHUAWPYXKBD-UHFFFAOYSA-N (±)-α-Tocopherol Chemical compound OC1=C(C)C(C)=C2OC(CCCC(C)CCCC(C)CCCC(C)C)(C)CCC2=C1C GVJHHUAWPYXKBD-UHFFFAOYSA-N 0.000 description 2
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- BBMCTIGTTCKYKF-UHFFFAOYSA-N 1-heptanol Chemical compound CCCCCCCO BBMCTIGTTCKYKF-UHFFFAOYSA-N 0.000 description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 2
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 2
- PTBDIHRZYDMNKB-UHFFFAOYSA-N 2,2-Bis(hydroxymethyl)propionic acid Chemical compound OCC(C)(CO)C(O)=O PTBDIHRZYDMNKB-UHFFFAOYSA-N 0.000 description 2
- PMNLUUOXGOOLSP-UHFFFAOYSA-N 2-mercaptopropanoic acid Chemical compound CC(S)C(O)=O PMNLUUOXGOOLSP-UHFFFAOYSA-N 0.000 description 2
- JYLNVJYYQQXNEK-UHFFFAOYSA-N 3-amino-2-(4-chlorophenyl)-1-propanesulfonic acid Chemical compound OS(=O)(=O)CC(CN)C1=CC=C(Cl)C=C1 JYLNVJYYQQXNEK-UHFFFAOYSA-N 0.000 description 2
- ZXLYUNPVVODNRE-UHFFFAOYSA-N 6-ethenyl-1,3,5-triazine-2,4-diamine Chemical compound NC1=NC(N)=NC(C=C)=N1 ZXLYUNPVVODNRE-UHFFFAOYSA-N 0.000 description 2
- GZVHEAJQGPRDLQ-UHFFFAOYSA-N 6-phenyl-1,3,5-triazine-2,4-diamine Chemical compound NC1=NC(N)=NC(C=2C=CC=CC=2)=N1 GZVHEAJQGPRDLQ-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 239000005632 Capric acid (CAS 334-48-5) Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- 241001641958 Desmia Species 0.000 description 2
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229930194542 Keto Natural products 0.000 description 2
- PWKSKIMOESPYIA-BYPYZUCNSA-N L-N-acetyl-Cysteine Chemical compound CC(=O)N[C@@H](CS)C(O)=O PWKSKIMOESPYIA-BYPYZUCNSA-N 0.000 description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 235000021355 Stearic acid Nutrition 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- YIMQCDZDWXUDCA-UHFFFAOYSA-N [4-(hydroxymethyl)cyclohexyl]methanol Chemical compound OCC1CCC(CO)CC1 YIMQCDZDWXUDCA-UHFFFAOYSA-N 0.000 description 2
- NJYZCEFQAIUHSD-UHFFFAOYSA-N acetoguanamine Chemical compound CC1=NC(N)=NC(N)=N1 NJYZCEFQAIUHSD-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 239000001361 adipic acid Substances 0.000 description 2
- 235000011037 adipic acid Nutrition 0.000 description 2
- 239000005456 alcohol based solvent Substances 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- MBMBGCFOFBJSGT-KUBAVDMBSA-N all-cis-docosa-4,7,10,13,16,19-hexaenoic acid Chemical compound CC\C=C/C\C=C/C\C=C/C\C=C/C\C=C/C\C=C/CCC(O)=O MBMBGCFOFBJSGT-KUBAVDMBSA-N 0.000 description 2
- XXROGKLTLUQVRX-UHFFFAOYSA-N allyl alcohol Chemical compound OCC=C XXROGKLTLUQVRX-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium peroxydisulfate Substances [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- VAZSKTXWXKYQJF-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)OOS([O-])=O VAZSKTXWXKYQJF-UHFFFAOYSA-N 0.000 description 2
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- 239000003945 anionic surfactant Substances 0.000 description 2
- YZXBAPSDXZZRGB-DOFZRALJSA-N arachidonic acid Chemical compound CCCCC\C=C/C\C=C/C\C=C/C\C=C/CCCC(O)=O YZXBAPSDXZZRGB-DOFZRALJSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- LLEMOWNGBBNAJR-UHFFFAOYSA-N biphenyl-2-ol Chemical compound OC1=CC=CC=C1C1=CC=CC=C1 LLEMOWNGBBNAJR-UHFFFAOYSA-N 0.000 description 2
- 229920001400 block copolymer Polymers 0.000 description 2
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- WQAQPCDUOCURKW-UHFFFAOYSA-N butanethiol Chemical compound CCCCS WQAQPCDUOCURKW-UHFFFAOYSA-N 0.000 description 2
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 235000015165 citric acid Nutrition 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 2
- VEZUQRBDRNJBJY-UHFFFAOYSA-N cyclohexanone oxime Chemical compound ON=C1CCCCC1 VEZUQRBDRNJBJY-UHFFFAOYSA-N 0.000 description 2
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical compound CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 2
- LQZZUXJYWNFBMV-UHFFFAOYSA-N dodecan-1-ol Chemical compound CCCCCCCCCCCCO LQZZUXJYWNFBMV-UHFFFAOYSA-N 0.000 description 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 2
- WNAHIZMDSQCWRP-UHFFFAOYSA-N dodecane-1-thiol Chemical compound CCCCCCCCCCCCS WNAHIZMDSQCWRP-UHFFFAOYSA-N 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- JBKVHLHDHHXQEQ-UHFFFAOYSA-N epsilon-caprolactam Chemical compound O=C1CCCCCN1 JBKVHLHDHHXQEQ-UHFFFAOYSA-N 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- MNWFXJYAOYHMED-UHFFFAOYSA-N heptanoic acid Chemical compound CCCCCCC(O)=O MNWFXJYAOYHMED-UHFFFAOYSA-N 0.000 description 2
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 125000001841 imino group Chemical group [H]N=* 0.000 description 2
- 238000005470 impregnation Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 2
- 239000005453 ketone based solvent Substances 0.000 description 2
- 150000003951 lactams Chemical class 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- UODXCYZDMHPIJE-UHFFFAOYSA-N menthanol Chemical compound CC1CCC(C(C)(C)O)CC1 UODXCYZDMHPIJE-UHFFFAOYSA-N 0.000 description 2
- 230000003472 neutralizing effect Effects 0.000 description 2
- ZWRUINPWMLAQRD-UHFFFAOYSA-N nonan-1-ol Chemical compound CCCCCCCCCO ZWRUINPWMLAQRD-UHFFFAOYSA-N 0.000 description 2
- FBUKVWPVBMHYJY-UHFFFAOYSA-N nonanoic acid Chemical compound CCCCCCCCC(O)=O FBUKVWPVBMHYJY-UHFFFAOYSA-N 0.000 description 2
- GLDOVTGHNKAZLK-UHFFFAOYSA-N octadecan-1-ol Chemical compound CCCCCCCCCCCCCCCCCCO GLDOVTGHNKAZLK-UHFFFAOYSA-N 0.000 description 2
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 2
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 2
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- AHHWIHXENZJRFG-UHFFFAOYSA-N oxetane Chemical compound C1COC1 AHHWIHXENZJRFG-UHFFFAOYSA-N 0.000 description 2
- 238000007649 pad printing Methods 0.000 description 2
- REIUXOLGHVXAEO-UHFFFAOYSA-N pentadecan-1-ol Chemical compound CCCCCCCCCCCCCCCO REIUXOLGHVXAEO-UHFFFAOYSA-N 0.000 description 2
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- XUWHAWMETYGRKB-UHFFFAOYSA-N piperidin-2-one Chemical compound O=C1CCCCN1 XUWHAWMETYGRKB-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 229920012287 polyphenylene sulfone Polymers 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- UBQKCCHYAOITMY-UHFFFAOYSA-N pyridin-2-ol Chemical compound OC1=CC=CC=N1 UBQKCCHYAOITMY-UHFFFAOYSA-N 0.000 description 2
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 150000003384 small molecules Chemical class 0.000 description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000008117 stearic acid Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- HLZKNKRTKFSKGZ-UHFFFAOYSA-N tetradecan-1-ol Chemical compound CCCCCCCCCCCCCCO HLZKNKRTKFSKGZ-UHFFFAOYSA-N 0.000 description 2
- BGHCVCJVXZWKCC-UHFFFAOYSA-N tetradecane Chemical compound CCCCCCCCCCCCCC BGHCVCJVXZWKCC-UHFFFAOYSA-N 0.000 description 2
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 description 2
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 2
- CWERGRDVMFNCDR-UHFFFAOYSA-N thioglycolic acid Chemical compound OC(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-N 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- IIYFAKIEWZDVMP-UHFFFAOYSA-N tridecane Chemical compound CCCCCCCCCCCCC IIYFAKIEWZDVMP-UHFFFAOYSA-N 0.000 description 2
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 description 2
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004034 viscosity adjusting agent Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- FMZUHGYZWYNSOA-VVBFYGJXSA-N (1r)-1-[(4r,4ar,8as)-2,6-diphenyl-4,4a,8,8a-tetrahydro-[1,3]dioxino[5,4-d][1,3]dioxin-4-yl]ethane-1,2-diol Chemical compound C([C@@H]1OC(O[C@@H]([C@@H]1O1)[C@H](O)CO)C=2C=CC=CC=2)OC1C1=CC=CC=C1 FMZUHGYZWYNSOA-VVBFYGJXSA-N 0.000 description 1
- OYHQOLUKZRVURQ-NTGFUMLPSA-N (9Z,12Z)-9,10,12,13-tetratritiooctadeca-9,12-dienoic acid Chemical compound C(CCCCCCC\C(=C(/C\C(=C(/CCCCC)\[3H])\[3H])\[3H])\[3H])(=O)O OYHQOLUKZRVURQ-NTGFUMLPSA-N 0.000 description 1
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- 239000001124 (E)-prop-1-ene-1,2,3-tricarboxylic acid Substances 0.000 description 1
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- ZORQXIQZAOLNGE-UHFFFAOYSA-N 1,1-difluorocyclohexane Chemical compound FC1(F)CCCCC1 ZORQXIQZAOLNGE-UHFFFAOYSA-N 0.000 description 1
- NNOZGCICXAYKLW-UHFFFAOYSA-N 1,2-bis(2-isocyanatopropan-2-yl)benzene Chemical compound O=C=NC(C)(C)C1=CC=CC=C1C(C)(C)N=C=O NNOZGCICXAYKLW-UHFFFAOYSA-N 0.000 description 1
- FKTHNVSLHLHISI-UHFFFAOYSA-N 1,2-bis(isocyanatomethyl)benzene Chemical compound O=C=NCC1=CC=CC=C1CN=C=O FKTHNVSLHLHISI-UHFFFAOYSA-N 0.000 description 1
- ODIRBFFBCSTPTO-UHFFFAOYSA-N 1,3-selenazole Chemical compound C1=C[se]C=N1 ODIRBFFBCSTPTO-UHFFFAOYSA-N 0.000 description 1
- CUVLMZNMSPJDON-UHFFFAOYSA-N 1-(1-butoxypropan-2-yloxy)propan-2-ol Chemical compound CCCCOCC(C)OCC(C)O CUVLMZNMSPJDON-UHFFFAOYSA-N 0.000 description 1
- XFRVVPUIAFSTFO-UHFFFAOYSA-N 1-Tridecanol Chemical compound CCCCCCCCCCCCCO XFRVVPUIAFSTFO-UHFFFAOYSA-N 0.000 description 1
- ZQXIMYREBUZLPM-UHFFFAOYSA-N 1-aminoethanethiol Chemical compound CC(N)S ZQXIMYREBUZLPM-UHFFFAOYSA-N 0.000 description 1
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 1
- LFSYUSUFCBOHGU-UHFFFAOYSA-N 1-isocyanato-2-[(4-isocyanatophenyl)methyl]benzene Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=CC=C1N=C=O LFSYUSUFCBOHGU-UHFFFAOYSA-N 0.000 description 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- LTMRRSWNXVJMBA-UHFFFAOYSA-L 2,2-diethylpropanedioate Chemical compound CCC(CC)(C([O-])=O)C([O-])=O LTMRRSWNXVJMBA-UHFFFAOYSA-L 0.000 description 1
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- RWLALWYNXFYRGW-UHFFFAOYSA-N 2-Ethyl-1,3-hexanediol Chemical compound CCCC(O)C(CC)CO RWLALWYNXFYRGW-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- JDSQBDGCMUXRBM-UHFFFAOYSA-N 2-[2-(2-butoxypropoxy)propoxy]propan-1-ol Chemical compound CCCCOC(C)COC(C)COC(C)CO JDSQBDGCMUXRBM-UHFFFAOYSA-N 0.000 description 1
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 description 1
- MXVMODFDROLTFD-UHFFFAOYSA-N 2-[2-[2-(2-butoxyethoxy)ethoxy]ethoxy]ethanol Chemical compound CCCCOCCOCCOCCOCCO MXVMODFDROLTFD-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- LDZYRENCLPUXAX-UHFFFAOYSA-N 2-methyl-1h-benzimidazole Chemical compound C1=CC=C2NC(C)=NC2=C1 LDZYRENCLPUXAX-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- 125000003504 2-oxazolinyl group Chemical class O1C(=NCC1)* 0.000 description 1
- WYKHSBAVLOPISI-UHFFFAOYSA-N 2-phenyl-1,3-thiazole Chemical compound C1=CSC(C=2C=CC=CC=2)=N1 WYKHSBAVLOPISI-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- CMLFRMDBDNHMRA-UHFFFAOYSA-N 2h-1,2-benzoxazine Chemical compound C1=CC=C2C=CNOC2=C1 CMLFRMDBDNHMRA-UHFFFAOYSA-N 0.000 description 1
- ZDWPBMJZDNXTPG-UHFFFAOYSA-N 2h-benzotriazol-4-amine Chemical compound NC1=CC=CC2=C1NN=N2 ZDWPBMJZDNXTPG-UHFFFAOYSA-N 0.000 description 1
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 description 1
- SDXAWLJRERMRKF-UHFFFAOYSA-N 3,5-dimethyl-1h-pyrazole Chemical compound CC=1C=C(C)NN=1 SDXAWLJRERMRKF-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- YICAEXQYKBMDNH-UHFFFAOYSA-N 3-[bis(3-hydroxypropyl)phosphanyl]propan-1-ol Chemical compound OCCCP(CCCO)CCCO YICAEXQYKBMDNH-UHFFFAOYSA-N 0.000 description 1
- DKIDEFUBRARXTE-UHFFFAOYSA-N 3-mercaptopropanoic acid Chemical compound OC(=O)CCS DKIDEFUBRARXTE-UHFFFAOYSA-N 0.000 description 1
- QMYGFTJCQFEDST-UHFFFAOYSA-N 3-methoxybutyl acetate Chemical compound COC(C)CCOC(C)=O QMYGFTJCQFEDST-UHFFFAOYSA-N 0.000 description 1
- LDMRLRNXHLPZJN-UHFFFAOYSA-N 3-propoxypropan-1-ol Chemical compound CCCOCCCO LDMRLRNXHLPZJN-UHFFFAOYSA-N 0.000 description 1
- GUUULVAMQJLDSY-UHFFFAOYSA-N 4,5-dihydro-1,2-thiazole Chemical compound C1CC=NS1 GUUULVAMQJLDSY-UHFFFAOYSA-N 0.000 description 1
- XKVUYEYANWFIJX-UHFFFAOYSA-N 5-methyl-1h-pyrazole Chemical compound CC1=CC=NN1 XKVUYEYANWFIJX-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 description 1
- NOWKCMXCCJGMRR-UHFFFAOYSA-N Aziridine Chemical compound C1CN1 NOWKCMXCCJGMRR-UHFFFAOYSA-N 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- PPTJNKDHIQSKSR-UHFFFAOYSA-N C(CCC)ON(C1=NC(=NC(=N1)N)N(CO)OCCCC)OCCCC Chemical compound C(CCC)ON(C1=NC(=NC(=N1)N)N(CO)OCCCC)OCCCC PPTJNKDHIQSKSR-UHFFFAOYSA-N 0.000 description 1
- 235000002566 Capsicum Nutrition 0.000 description 1
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- 244000060011 Cocos nucifera Species 0.000 description 1
- 235000013162 Cocos nucifera Nutrition 0.000 description 1
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 1
- ZZZCUOFIHGPKAK-UHFFFAOYSA-N D-erythro-ascorbic acid Natural products OCC1OC(=O)C(O)=C1O ZZZCUOFIHGPKAK-UHFFFAOYSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 244000126211 Hericium coralloides Species 0.000 description 1
- 239000005057 Hexamethylene diisocyanate Substances 0.000 description 1
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 1
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 1
- 239000005058 Isophorone diisocyanate Substances 0.000 description 1
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 description 1
- FFEARJCKVFRZRR-BYPYZUCNSA-N L-methionine Chemical compound CSCC[C@H](N)C(O)=O FFEARJCKVFRZRR-BYPYZUCNSA-N 0.000 description 1
- OUYCCCASQSFEME-QMMMGPOBSA-N L-tyrosine Chemical compound OC(=O)[C@@H](N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-QMMMGPOBSA-N 0.000 description 1
- 239000005639 Lauric acid Substances 0.000 description 1
- 241001124569 Lycaenidae Species 0.000 description 1
- FZERHIULMFGESH-UHFFFAOYSA-N N-phenylacetamide Chemical compound CC(=O)NC1=CC=CC=C1 FZERHIULMFGESH-UHFFFAOYSA-N 0.000 description 1
- WWEXBGFSEVKZNE-UHFFFAOYSA-N N=C=O.N=C=O.C1=CC=CC2=CC=CC=C21 Chemical compound N=C=O.N=C=O.C1=CC=CC2=CC=CC=C21 WWEXBGFSEVKZNE-UHFFFAOYSA-N 0.000 description 1
- OMRDSWJXRLDPBB-UHFFFAOYSA-N N=C=O.N=C=O.C1CCCCC1 Chemical compound N=C=O.N=C=O.C1CCCCC1 OMRDSWJXRLDPBB-UHFFFAOYSA-N 0.000 description 1
- 229930192627 Naphthoquinone Natural products 0.000 description 1
- 241000047703 Nonion Species 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 235000021314 Palmitic acid Nutrition 0.000 description 1
- 239000005643 Pelargonic acid Substances 0.000 description 1
- 239000006002 Pepper Substances 0.000 description 1
- 235000016761 Piper aduncum Nutrition 0.000 description 1
- 235000017804 Piper guineense Nutrition 0.000 description 1
- 244000203593 Piper nigrum Species 0.000 description 1
- 235000008184 Piper nigrum Nutrition 0.000 description 1
- 229930182556 Polyacetal Natural products 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- LCTONWCANYUPML-UHFFFAOYSA-M Pyruvate Chemical compound CC(=O)C([O-])=O LCTONWCANYUPML-UHFFFAOYSA-M 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021607 Silver chloride Inorganic materials 0.000 description 1
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 1
- 229910002855 Sn-Pd Inorganic materials 0.000 description 1
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 description 1
- BCKXLBQYZLBQEK-KVVVOXFISA-M Sodium oleate Chemical compound [Na+].CCCCCCCC\C=C/CCCCCCCC([O-])=O BCKXLBQYZLBQEK-KVVVOXFISA-M 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 1
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 229930003268 Vitamin C Natural products 0.000 description 1
- 229930003427 Vitamin E Natural products 0.000 description 1
- MBHRHUJRKGNOKX-UHFFFAOYSA-N [(4,6-diamino-1,3,5-triazin-2-yl)amino]methanol Chemical compound NC1=NC(N)=NC(NCO)=N1 MBHRHUJRKGNOKX-UHFFFAOYSA-N 0.000 description 1
- JWEIEUSIPQTNHI-UHFFFAOYSA-N [[4-amino-6-(dimethoxyamino)-1,3,5-triazin-2-yl]-methoxyamino]methanol Chemical compound CON(CO)C1=NC(N)=NC(N(OC)OC)=N1 JWEIEUSIPQTNHI-UHFFFAOYSA-N 0.000 description 1
- BJSBGAIKEORPFG-UHFFFAOYSA-N [[6-amino-1,2,3,4-tetramethoxy-4-(methoxyamino)-1,3,5-triazin-2-yl]-methoxyamino]methanol Chemical compound CONC1(N(C(N(C(=N1)N)OC)(N(CO)OC)OC)OC)OC BJSBGAIKEORPFG-UHFFFAOYSA-N 0.000 description 1
- KXBFLNPZHXDQLV-UHFFFAOYSA-N [cyclohexyl(diisocyanato)methyl]cyclohexane Chemical compound C1CCCCC1C(N=C=O)(N=C=O)C1CCCCC1 KXBFLNPZHXDQLV-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052946 acanthite Inorganic materials 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 229960004308 acetylcysteine Drugs 0.000 description 1
- ZUQAPLKKNAQJAU-UHFFFAOYSA-N acetylenediol Chemical compound OC#CO ZUQAPLKKNAQJAU-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 229940091181 aconitic acid Drugs 0.000 description 1
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- GZCGUPFRVQAUEE-SLPGGIOYSA-N aldehydo-D-glucose Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C=O GZCGUPFRVQAUEE-SLPGGIOYSA-N 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 125000005370 alkoxysilyl group Chemical group 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000008051 alkyl sulfates Chemical class 0.000 description 1
- 125000005211 alkyl trimethyl ammonium group Chemical group 0.000 description 1
- OBETXYAYXDNJHR-UHFFFAOYSA-N alpha-ethylcaproic acid Natural products CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- DTOSIQBPPRVQHS-PDBXOOCHSA-N alpha-linolenic acid Chemical compound CC\C=C/C\C=C/C\C=C/CCCCCCCC(O)=O DTOSIQBPPRVQHS-PDBXOOCHSA-N 0.000 description 1
- 235000020661 alpha-linolenic acid Nutrition 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- OJMOMXZKOWKUTA-UHFFFAOYSA-N aluminum;borate Chemical compound [Al+3].[O-]B([O-])[O-] OJMOMXZKOWKUTA-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 235000001014 amino acid Nutrition 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 229920003180 amino resin Polymers 0.000 description 1
- XYXNTHIYBIDHGM-UHFFFAOYSA-N ammonium thiosulfate Chemical compound [NH4+].[NH4+].[O-]S([O-])(=O)=S XYXNTHIYBIDHGM-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 238000010539 anionic addition polymerization reaction Methods 0.000 description 1
- 230000002421 anti-septic effect Effects 0.000 description 1
- 229940114079 arachidonic acid Drugs 0.000 description 1
- 235000021342 arachidonic acid Nutrition 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 235000010323 ascorbic acid Nutrition 0.000 description 1
- 239000011668 ascorbic acid Substances 0.000 description 1
- 229960005070 ascorbic acid Drugs 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 150000003851 azoles Chemical class 0.000 description 1
- VBQRUYIOTHNGOP-UHFFFAOYSA-N benzo[c][2,1]benzoxaphosphinine 6-oxide Chemical class C1=CC=C2P(=O)OC3=CC=CC=C3C2=C1 VBQRUYIOTHNGOP-UHFFFAOYSA-N 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- YTZNYEIZQUOADS-UHFFFAOYSA-N benzotriazol-1-ylmethanediamine Chemical compound C1=CC=C2N(C(N)N)N=NC2=C1 YTZNYEIZQUOADS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- HIFVAOIJYDXIJG-UHFFFAOYSA-N benzylbenzene;isocyanic acid Chemical class N=C=O.N=C=O.C=1C=CC=CC=1CC1=CC=CC=C1 HIFVAOIJYDXIJG-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 description 1
- BMRWNKZVCUKKSR-UHFFFAOYSA-N butane-1,2-diol Chemical compound CCC(O)CO BMRWNKZVCUKKSR-UHFFFAOYSA-N 0.000 description 1
- OWBTYPJTUOEWEK-UHFFFAOYSA-N butane-2,3-diol Chemical compound CC(O)C(C)O OWBTYPJTUOEWEK-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- 239000004359 castor oil Substances 0.000 description 1
- 235000019438 castor oil Nutrition 0.000 description 1
- 238000010538 cationic polymerization reaction Methods 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- GTZCVFVGUGFEME-IWQZZHSRSA-N cis-aconitic acid Chemical compound OC(=O)C\C(C(O)=O)=C\C(O)=O GTZCVFVGUGFEME-IWQZZHSRSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 235000014987 copper Nutrition 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 239000012787 coverlay film Substances 0.000 description 1
- 125000000853 cresyl group Chemical group C1(=CC=C(C=C1)C)* 0.000 description 1
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 150000001925 cycloalkenes Chemical class 0.000 description 1
- WJTCGQSWYFHTAC-UHFFFAOYSA-N cyclooctane Chemical compound C1CCCCCCC1 WJTCGQSWYFHTAC-UHFFFAOYSA-N 0.000 description 1
- 239000004914 cyclooctane Substances 0.000 description 1
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 description 1
- 235000018417 cysteine Nutrition 0.000 description 1
- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical compound CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229940087101 dibenzylidene sorbitol Drugs 0.000 description 1
- KORSJDCBLAPZEQ-UHFFFAOYSA-N dicyclohexylmethane-4,4'-diisocyanate Chemical compound C1CC(N=C=O)CCC1CC1CCC(N=C=O)CC1 KORSJDCBLAPZEQ-UHFFFAOYSA-N 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- BEPAFCGSDWSTEL-UHFFFAOYSA-N dimethyl malonate Chemical compound COC(=O)CC(=O)OC BEPAFCGSDWSTEL-UHFFFAOYSA-N 0.000 description 1
- 235000019329 dioctyl sodium sulphosuccinate Nutrition 0.000 description 1
- FGRVOLIFQGXPCT-UHFFFAOYSA-L dipotassium;dioxido-oxo-sulfanylidene-$l^{6}-sulfane Chemical compound [K+].[K+].[O-]S([O-])(=O)=S FGRVOLIFQGXPCT-UHFFFAOYSA-L 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229940090949 docosahexaenoic acid Drugs 0.000 description 1
- 235000020669 docosahexaenoic acid Nutrition 0.000 description 1
- JRBPAEWTRLWTQC-UHFFFAOYSA-N dodecylamine Chemical compound CCCCCCCCCCCCN JRBPAEWTRLWTQC-UHFFFAOYSA-N 0.000 description 1
- KWKXNDCHNDYVRT-UHFFFAOYSA-N dodecylbenzene Chemical compound CCCCCCCCCCCCC1=CC=CC=C1 KWKXNDCHNDYVRT-UHFFFAOYSA-N 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000002296 dynamic light scattering Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 1
- JBTWLSYIZRCDFO-UHFFFAOYSA-N ethyl methyl carbonate Chemical compound CCOC(=O)OC JBTWLSYIZRCDFO-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000003925 fat Substances 0.000 description 1
- 235000019197 fats Nutrition 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 238000005194 fractionation Methods 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 235000011087 fumaric acid Nutrition 0.000 description 1
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- WIGCFUFOHFEKBI-UHFFFAOYSA-N gamma-tocopherol Natural products CC(C)CCCC(C)CCCC(C)CCCC1CCC2C(C)C(O)C(C)C(C)C2O1 WIGCFUFOHFEKBI-UHFFFAOYSA-N 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 description 1
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000009957 hemming Methods 0.000 description 1
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 description 1
- 238000007602 hot air drying Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 1
- 125000004464 hydroxyphenyl group Chemical group 0.000 description 1
- TVZISJTYELEYPI-UHFFFAOYSA-N hypodiphosphoric acid Chemical compound OP(O)(=O)P(O)(O)=O TVZISJTYELEYPI-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- YAMHXTCMCPHKLN-UHFFFAOYSA-N imidazolidin-2-one Chemical compound O=C1NCCN1 YAMHXTCMCPHKLN-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007603 infrared drying Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 150000008040 ionic compounds Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229940035429 isobutyl alcohol Drugs 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- NIMLQBUJDJZYEJ-UHFFFAOYSA-N isophorone diisocyanate Chemical compound CC1(C)CC(N=C=O)CC(C)(CN=C=O)C1 NIMLQBUJDJZYEJ-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 229960004488 linolenic acid Drugs 0.000 description 1
- KQQKGWQCNNTQJW-UHFFFAOYSA-N linolenic acid Natural products CC=CCCC=CCC=CCCCCCCCC(O)=O KQQKGWQCNNTQJW-UHFFFAOYSA-N 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- FQPSGWSUVKBHSU-UHFFFAOYSA-N methacrylamide Chemical compound CC(=C)C(N)=O FQPSGWSUVKBHSU-UHFFFAOYSA-N 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- 229930182817 methionine Natural products 0.000 description 1
- 235000006109 methionine Nutrition 0.000 description 1
- AYLRODJJLADBOB-QMMMGPOBSA-N methyl (2s)-2,6-diisocyanatohexanoate Chemical compound COC(=O)[C@@H](N=C=O)CCCCN=C=O AYLRODJJLADBOB-QMMMGPOBSA-N 0.000 description 1
- XVTQAXXMUNXFMU-UHFFFAOYSA-N methyl 2-(3-oxo-2-pyridin-2-yl-1h-pyrazol-5-yl)acetate Chemical compound N1C(CC(=O)OC)=CC(=O)N1C1=CC=CC=N1 XVTQAXXMUNXFMU-UHFFFAOYSA-N 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 235000010981 methylcellulose Nutrition 0.000 description 1
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 235000010755 mineral Nutrition 0.000 description 1
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 1
- DIOQZVSQGTUSAI-UHFFFAOYSA-N n-butylhexane Natural products CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 1
- GOQYKNQRPGWPLP-UHFFFAOYSA-N n-heptadecyl alcohol Natural products CCCCCCCCCCCCCCCCCO GOQYKNQRPGWPLP-UHFFFAOYSA-N 0.000 description 1
- 239000002121 nanofiber Substances 0.000 description 1
- PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical class C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- 229940117969 neopentyl glycol Drugs 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000012454 non-polar solvent Substances 0.000 description 1
- ZCYXXKJEDCHMGH-UHFFFAOYSA-N nonane Chemical compound CCCC[CH]CCCC ZCYXXKJEDCHMGH-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- BKIMMITUMNQMOS-UHFFFAOYSA-N normal nonane Natural products CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- KZCOBXFFBQJQHH-UHFFFAOYSA-N octane-1-thiol Chemical compound CCCCCCCCS KZCOBXFFBQJQHH-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 235000019198 oils Nutrition 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 229960002969 oleic acid Drugs 0.000 description 1
- 235000021313 oleic acid Nutrition 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- CQDAMYNQINDRQC-UHFFFAOYSA-N oxatriazole Chemical compound C1=NN=NO1 CQDAMYNQINDRQC-UHFFFAOYSA-N 0.000 description 1
- 125000003566 oxetanyl group Chemical group 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 150000003016 phosphoric acids Chemical class 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920000333 poly(propyleneimine) Polymers 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920005906 polyester polyol Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920013716 polyethylene resin Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 239000002685 polymerization catalyst Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920006389 polyphenyl polymer Polymers 0.000 description 1
- 150000007519 polyprotic acids Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- CIBMHJPPKCXONB-UHFFFAOYSA-N propane-2,2-diol Chemical compound CC(C)(O)O CIBMHJPPKCXONB-UHFFFAOYSA-N 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- YBBJKCMMCRQZMA-UHFFFAOYSA-N pyrithione Chemical compound ON1C=CC=CC1=S YBBJKCMMCRQZMA-UHFFFAOYSA-N 0.000 description 1
- 229960002026 pyrithione Drugs 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 230000002940 repellent Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229960001755 resorcinol Drugs 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 description 1
- 238000010517 secondary reaction Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920002545 silicone oil Chemical class 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229940100890 silver compound Drugs 0.000 description 1
- 150000003379 silver compounds Chemical class 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- 229940056910 silver sulfide Drugs 0.000 description 1
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- APSBXTVYXVQYAB-UHFFFAOYSA-M sodium docusate Chemical compound [Na+].CCCCC(CC)COC(=O)CC(S([O-])(=O)=O)C(=O)OCC(CC)CCCC APSBXTVYXVQYAB-UHFFFAOYSA-M 0.000 description 1
- 239000012312 sodium hydride Substances 0.000 description 1
- 229910000104 sodium hydride Inorganic materials 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 description 1
- 235000019345 sodium thiosulphate Nutrition 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000001593 sorbitan monooleate Substances 0.000 description 1
- 235000011069 sorbitan monooleate Nutrition 0.000 description 1
- 229940035049 sorbitan monooleate Drugs 0.000 description 1
- 239000000600 sorbitol Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000003549 soybean oil Substances 0.000 description 1
- 235000012424 soybean oil Nutrition 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 150000003464 sulfur compounds Chemical class 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 229920006174 synthetic rubber latex Polymers 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 150000003536 tetrazoles Chemical class 0.000 description 1
- VLLMWSRANPNYQX-UHFFFAOYSA-N thiadiazole Chemical compound C1=CSN=N1.C1=CSN=N1 VLLMWSRANPNYQX-UHFFFAOYSA-N 0.000 description 1
- YGNGABUJMXJPIJ-UHFFFAOYSA-N thiatriazole Chemical compound C1=NN=NS1 YGNGABUJMXJPIJ-UHFFFAOYSA-N 0.000 description 1
- 125000000101 thioether group Chemical group 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 150000004764 thiosulfuric acid derivatives Chemical class 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- GTZCVFVGUGFEME-UHFFFAOYSA-N trans-aconitic acid Natural products OC(=O)CC(C(O)=O)=CC(O)=O GTZCVFVGUGFEME-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 description 1
- KJIOQYGWTQBHNH-UHFFFAOYSA-N undecanol Chemical compound CCCCCCCCCCCO KJIOQYGWTQBHNH-UHFFFAOYSA-N 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 235000019154 vitamin C Nutrition 0.000 description 1
- 239000011718 vitamin C Substances 0.000 description 1
- 235000019165 vitamin E Nutrition 0.000 description 1
- 239000011709 vitamin E Substances 0.000 description 1
- 229940046009 vitamin E Drugs 0.000 description 1
- 229920003169 water-soluble polymer Polymers 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/108—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/381—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/422—Plated through-holes or plated via connections characterised by electroless plating method; pretreatment therefor
Definitions
- the present invention relates to a planar semi-additive method laminate used for electrically connecting both sides of a base material and a printed wiring board using the same.
- the printed wiring board is a printed wiring board in which a metal layer of a circuit pattern is formed on the surface of an insulating base material.
- a metal layer of a circuit pattern is formed on the surface of an insulating base material.
- an etching resist having a circuit pattern shape is formed on the surface of a copper layer formed on an insulating base material, and the copper layer in a circuit-unnecessary part is etched to obtain the copper wiring.
- the subtractive method of forming has been widely used.
- the etching solution may wrap around the lower part of the resist, and as a result of the side etching, the wiring width direction may become narrower. It was a problem. In particular, when regions having different wiring densities coexist, there is a problem that the fine wiring existing in the region having a low wiring density disappears as the etching proceeds. Furthermore, the cross-sectional shape of the wiring obtained by the subtractive method is not rectangular, but has a trapezoidal shape or a triangular shape with a wide hem on the base material side. There was also a problem as a transmission line.
- a semi-additive method has been proposed as a method for solving these problems and manufacturing a fine wiring circuit.
- a conductive seed layer is formed on an insulating base material, and a plating resist is formed on a non-circuit forming portion on the seed layer.
- the resist is peeled off and the seed layer of the non-circuit forming portion is removed to form the fine wiring.
- the plating is deposited along the shape of the resist, the cross-sectional shape of the wiring can be made rectangular, and the wiring of the desired width can be deposited regardless of the density of the pattern. Since it can be formed, it is suitable for forming fine wiring.
- a method of forming a conductive seed layer on an insulating base material by electroless copper plating using a palladium catalyst or electroless nickel plating is known.
- the surface of the substrate is roughened using a strong chemical such as permanganic acid, which is called desmear roughening, in order to ensure the adhesion between the film substrate and the copper-plated film.
- desmear roughening a strong chemical such as permanganic acid
- a technique of forming electroless nickel plating on a polyimide film to form a conductive seed is also known.
- the imide ring of the surface layer is opened to make the film surface hydrophilic, and at the same time, a modified layer in which water permeates is formed, and the modified layer is contained.
- a palladium catalyst is impregnated into the film and electroless nickel plating is performed to form a nickel seed layer (see, for example, Patent Document 1).
- the adhesion strength is obtained by forming nickel plating from the modified layer of the outermost polyimide layer, but since the modified layer is in a state where the imide ring is opened, the film surface layer. There was a problem that the structure was physically and chemically weak.
- Patent Document 2 a method of forming a conductive seed such as nickel or titanium on an insulating base material by a sputtering method is also known (for example).
- Patent Document 2 a method of forming a conductive seed such as nickel or titanium on an insulating base material by a sputtering method is also known (for example).
- Patent Document 2 This method can form a seed layer without roughening the surface of the substrate, but it requires the use of expensive vacuum equipment, a large initial investment, and the size and shape of the substrate. The problems were that there were restrictions and that the process was complicated with low productivity.
- a method for solving the problem of the sputtering method a method of using a coating layer of a conductive ink containing metal particles as a conductive seed layer has been proposed (see, for example, Patent Document 3).
- the above-mentioned coating is performed by applying a conductive ink in which metal particles having a particle diameter of 1 to 500 nm are dispersed on an insulating base material made of a film or a sheet, and performing a heat treatment.
- a technique is disclosed in which metal particles in a conductive ink are fixed as a metal layer on an insulating base material to form a conductive seed layer, and further, plating is performed on the conductive seed layer.
- Patent Document 3 pattern formation by a semi-additive method is proposed, and in an embodiment, a conductive ink in which copper particles are dispersed is applied and heat-treated to form a copper conductive seed layer.
- a photosensitive resist is formed on the conductive seed layer, exposed and developed, the pattern-forming part is thickened by electrolytic copper plating, the resist is peeled off, and then copper is used. It is described that the conductive seed layer of the above is removed by etching.
- a thin copper foil or a base material provided with a copper plating film as a conductive seed on an insulating base material is semi-additive. It is used as a base material for construction methods.
- the conductive seed layer and the conductive layer of the circuit pattern are formed of the same metal as in the combination of the conductive seed layer of copper and the circuit pattern of copper, the conductive seed layer of the non-pattern forming portion is formed. It is known that the conductive layer of the circuit pattern is also etched at the same time when the circuit pattern is removed, so that the circuit pattern becomes thinner and thinner, and the surface roughness of the circuit conductive layer also increases. It was a problem to be solved in manufacturing wiring for high frequency transmission.
- Non-Patent Documents 1 and 2 a substrate in which a conductive silver particle layer is formed on the surface of an insulating substrate as a substrate for a semi-additive method in a seed layer etching step. Invented a technique for forming a printed wiring board having a smooth circuit layer surface with good design reproducibility without thinning of the circuit pattern or thinning.
- the technique can form circuits on both sides as well as on one side, but has conductive silver particle layers on both sides of the insulating substrate to connect the circuits on both sides.
- the holes are adsorbed on the conductive seed layer.
- the conductive silver particle layer (M1) may be damaged and cannot be used as a plating seed.
- the conductive seed layer for forming a circuit pattern becomes a copper layer, and as described above, in the seed layer etching step.
- the thinning of the circuit pattern and the thinning of the circuit pattern become problems.
- the problem to be solved by the present invention is that it does not require surface roughening with chromium acid or permanganic acid, formation of a surface modification layer with alkali, etc., and high adhesion between the substrate and the conductor circuit without using a vacuum device.
- a planar semi-additive method laminate for double-sided connection that can form wiring with good properties, less undercut, good design reproducibility, and a good rectangular cross-sectional shape as circuit wiring, and printing using it. It is to provide a wiring board.
- the present inventors have a conductive silver particle layer (M1) on both surfaces of the insulating base material (A), and further, both sides of the base material are formed.
- a vacuum device is used without the need for complicated surface roughening or formation of a surface modification layer. It is possible to form a printed wiring board connected on both sides, which has high adhesion between the base material and the conductor circuit, has less undercut, has good design reproducibility, and has a rectangular cross-sectional shape that is good for circuit wiring. And completed the present invention.
- the present invention 1.
- a laminate for a semi-additive method, which has through holes connecting both sides of the base material, and the surface of the through holes is a base material whose conductivity is ensured by a silver layer.
- the primer layer (B) is a layer composed of a resin having a reactive functional group [X], and the polymer dispersant is a reactive functional group [Y]. ], And the above-mentioned reactive functional group [X] and the above-mentioned reactive functional group [Y] can form a bond with each other by a reaction.
- polymer dispersant having the reactive functional group [Y] is at least one selected from the group consisting of polyalkyleneimine and polyalkyleneimine having a polyoxyalkylene structure containing an oxyethylene unit. Laminated body for wiring board.
- the reactive functional group [X] is selected from the group consisting of a keto group, an acetoacetyl group, an epoxy group, a carboxyl group, an N-alkyrole group, an isocyanate group, a vinyl group, a (meth) acryloyl group and an allyl group1
- a keto group an acetoacetyl group
- an epoxy group an epoxy group
- a carboxyl group an N-alkyrole group
- an isocyanate group a vinyl group
- a (meth) acryloyl group and an allyl group1
- the laminate for a printed wiring board according to any one of 5 to 7 which is more than a seed.
- a printed wiring board which is formed by using the laminate for the semi-additive method according to any one of 9.1 to 8.
- a conductive layer (M3) made of copper is further laminated on the silver particle layer (M1) of the laminate for a printed wiring board according to any one of 8 to 8 and the silver layer on the surface of the through hole connecting both sides of the base material.
- a silver particle layer (M1) and a copper layer (M2) are sequentially laminated on both surfaces of the insulating base material (A), and the layer thickness of the copper layer (M2) is 0.1 ⁇ m to 2 ⁇ m.
- Step 1 in which through holes penetrating both sides are formed in the laminated body.
- Step 2 of applying a catalyst for electroless silver plating on the surface of the base material having through holes.
- Step 3 of etching the copper layer (M2) to expose the conductive silver particle layer (M1).
- Step 4 which makes the through holes conductive with a silver layer by electroless silver plating,
- Step 4 which makes the through holes conductive with a silver layer by electroless silver plating,
- a silver particle layer (M1) and a copper layer (M2) are sequentially laminated on both surfaces of the insulating base material (A), and the layer thickness of the copper layer (M2) is 0.1 ⁇ m to 2 ⁇ m.
- Step 1 in which through holes penetrating both sides are formed in the laminated body.
- Step 2 of applying a catalyst for electroless silver plating on the surface of the base material having through holes.
- Step 3 of etching the copper layer (M2) to expose the conductive silver particle layer (M1).
- Step 4 which makes the through holes conductive with a silver layer by electroless silver plating, Step 5 of forming a pattern resist on the conductive silver particle layer (M1).
- Step 6 in which both sides of the substrate are electrically connected by electrolytic copper plating and a conductive layer (M3) circuit pattern is formed.
- Step 7 of peeling off the pattern resist and removing the silver particle layer (M1) of the non-circuit pattern forming portion with an etching solution. 9 or 10, according to the method for manufacturing a printed wiring board.
- Step 1 of forming through holes penetrating both sides in a laminated body in which a silver particle layer (M1) and a peelable cover layer (RC) are sequentially laminated on both surfaces of an insulating base material (A).
- Step 2 of applying a catalyst for electroless silver plating on the surface of the base material having through holes.
- Step 3 the step 3 of peeling off the peelable cover layer (RC) to expose the conductive silver particle layer (M1).
- Step 4 which makes the through holes conductive with a silver layer by electroless silver plating
- Step 5 of forming a pattern resist on the conductive silver particle layer (M1).
- Step 6 in which both sides of the substrate are electrically connected by electrolytic copper plating and a conductive layer (M3) circuit pattern is formed.
- Step 7 of peeling off the pattern resist and removing the silver particle layer (M1) of the non-circuit pattern forming portion with an etching solution. 9 or 10, according to the method for manufacturing a printed wiring board.
- the printed wiring board manufactured by using the laminate for the semi-additive method of the present invention is used not only for a normal printed wiring board but also for various electronic members having a patterned metal layer on the surface of the base material. For example, it can be applied to connectors, electromagnetic wave shields, antennas such as RFID, film capacitors, and the like.
- FIG. 1 is a schematic view of the laminate for the semi-additive method according to claim 1.
- FIG. 2 is a schematic view of a laminate for a semi-additive method having a primer layer on the silver particle layer of FIG. 1 according to claim 2.
- FIG. 3 is a process diagram for manufacturing a printed wiring board using the laminate for the semi-additive method shown in FIG.
- the laminate for the semi-additive method of the present invention has a conductive silver particle layer (M1) on both surfaces of the insulating base material (A), and further through holes connecting both sides of the base material. It is characterized in that the surface of the base material is a base material whose conductivity is ensured by a silver layer.
- the laminate for the semi-additive method according to a more preferable aspect of the present invention further has a primer layer (B) between the insulating base material layer (A) and the conductive silver particle layer (M1). It is characterized by.
- Examples of the material of the insulating base material (A) include polyimide resin, polyamideimide resin, polyamide resin, polyethylene terephthalate resin, polybutylene terephthalate resin, polyethylene naphthalate resin, polycarbonate resin, and acrylonitrile-butadiene-styrene (ABS).
- Acrylic resin such as resin, polyarylate resin, polyacetal resin, poly (meth) methyl acrylate, polyfluorovinylidene resin, polytetrafluoroethylene resin, polyvinyl chloride resin, polyvinylidene chloride resin, and acrylic resin were graft-copolymerized.
- Vinyl chloride resin polyvinyl alcohol resin, polyethylene resin, polypropylene resin, urethane resin, cycloolefin resin, polystyrene, liquid crystal polymer (LCP), polyether ether ketone (PEEK) resin, polyphenylene sulfide (PPS), polyphenylene sulfone (PPSU), Examples thereof include cellulose nanofibers, silicon, silicon carbide, gallium nitride, sapphire, ceramics, glass, diamond-like carbon (DLC), alumina and the like.
- LCP liquid crystal polymer
- PEEK polyether ether ketone
- PPS polyphenylene sulfide
- PPSU polyphenylene sulfone
- Examples thereof include cellulose nanofibers, silicon, silicon carbide, gallium nitride, sapphire, ceramics, glass, diamond-like carbon (DLC), alumina and the like.
- thermosetting resin examples include epoxy resin, phenol resin, unsaturated imide resin, cyanate resin, isocyanate resin, benzoxazine resin, oxetane resin, amino resin, unsaturated polyester resin, allyl resin, and dicyclopentadiene resin.
- examples thereof include silicone resin, triazine resin, and melamine resin.
- examples of the inorganic filler include silica, alumina, talc, mica, aluminum hydroxide, magnesium hydroxide, calcium carbonate, aluminum borate, and glass borate.
- the insulating base material (A) any of a flat flexible material, a rigid material, and a rigid flexible material can be used. More specifically, a film, a sheet, or a commercially available material molded into a plate may be used for the insulating base material (A), or the above-mentioned resin solution, melt liquid, or dispersion liquid may be made flat. A molded material may be used. Further, the insulating base material (A) may be a base material having the above-mentioned resin material formed on a conductive material such as metal, and may be placed on a printed wiring board on which a circuit pattern is formed. , A base material obtained by laminating and forming the above-mentioned resin material may be used.
- the silver particle layer (M1) is used when a conductive layer (M3) having a wiring pattern to be described later is formed by a plating step when a printed wiring board is manufactured by using the laminated body for a printed wiring board of the present invention. It becomes a plating base layer.
- the silver particles constituting the silver particle layer (M1) can contain metal particles other than silver as long as the plating step described later can be carried out without any problem, but the proportion of the metal particles other than silver will be described later. 5 parts by mass or less is preferable with respect to 100 parts by mass of silver, and 2 parts by mass or less is more preferable, because the etching removability of the non-circuit forming portion can be further improved.
- a silver particle dispersion liquid is applied to both sides of the insulating base material (A).
- the coating method of the silver particle dispersion liquid is not particularly limited as long as the silver particle layer (M1) can be formed satisfactorily, and various coating methods can be used depending on the shape, size, and rigidity of the insulating base material (A). It may be selected appropriately depending on the degree and the like.
- Specific coating methods include, for example, a gravure method, an offset method, a flexographic method, a pad printing method, a gravure offset method, a letterpress method, a letterpress inversion method, a screen method, a microcontact method, a reverse method, and an air doctor coater method.
- the silver particle layer (M1) may be simultaneously formed on both surfaces of the insulating base material (A), or may be formed on one side of the insulating base material (A) and then on the other side. It may be formed.
- the insulating base material (A) and the primer layer (B) formed on the insulating base material (A) are provided with a conductive layer (M3) formed in the plating step for improving the coatability of the silver particle dispersion liquid.
- a conductive layer (M3) formed in the plating step for improving the coatability of the silver particle dispersion liquid.
- the surface treatment method for the insulating base material (A) is not particularly limited as long as the surface roughness becomes large and the fine pitch pattern formability and the signal transmission loss due to the rough surface do not become a problem, and various methods are used. Should be selected as appropriate. Examples of such a surface treatment method include UV treatment, vapor phase ozone treatment, liquid layer ozone treatment, corona treatment, plasma treatment and the like. These surface treatment methods may be carried out by one kind of method or a combination of two or more kinds of methods.
- the coating film is dried to volatilize the solvent contained in the silver particle dispersion liquid.
- the silver particle layer (M1) is formed on the insulating base material (A) or on the primer layer (B).
- the above-mentioned drying temperature and time may be appropriately selected depending on the heat-resistant temperature of the base material to be used and the type of the solvent used for the metal particle dispersion liquid described later, but the time may be in the range of 20 to 350 ° C. The range of 1 to 200 minutes is preferable. Further, in order to form the silver particle layer (M1) having excellent adhesion on the substrate, the drying temperature is more preferably in the range of 0 to 250 ° C.
- the insulating base material (A) on which the silver particle layer (M1) is formed or the insulating base material (A) on which the primer layer (B) is formed is, if necessary, after the above-mentioned drying, the silver particles. Further annealing is performed for the purpose of reducing the electrical resistance of the layer and for the purpose of improving the adhesion between the insulating base material (A) or the primer layer (B) and the silver particle layer (M1). May be good.
- the annealing temperature and time may be appropriately selected according to the heat resistant temperature of the substrate to be used, the required electrical resistance, productivity, etc., and may be performed in the range of 60 to 350 ° C. for 1 minute to 2 weeks. .. Further, in the temperature range of 60 to 180 ° C., the time is preferably 1 minute to 2 weeks, and in the range of 180 to 350 ° C., it is preferably about 1 minute to 5 hours.
- the above drying may be performed by blowing air, or may not be blown in particular. Further, the drying may be carried out in the atmosphere, under a substitution atmosphere of an inert gas such as nitrogen or argon, under an air flow, or under a vacuum.
- an inert gas such as nitrogen or argon
- Drying of the coating film can be performed in a dryer such as a blower or a constant temperature dryer, in addition to natural drying at the coating site.
- a dryer such as a blower or a constant temperature dryer
- the roll material is dried by continuously moving the roll material in an installed non-heated or heated space following the coating process.
- the heating method for drying / firing at this time include a method using an oven, a hot air drying furnace, an infrared drying furnace, laser irradiation, microwaves, light irradiation (flash irradiation device), and the like. These heating methods can be used alone or in combination of two or more.
- the amount of the metal particle layer (M1) formed on the insulating base material (A) or the primer layer (B) is preferably in the range of 0.01 to 30 g / m 2 , preferably 0.01.
- the range of ⁇ 10 g / m 2 is more preferable.
- the range of 0.05 to 5 g / m 2 is more preferable because the formation of the conductive layer (M3) by the plating step described later becomes easy and the seed layer removal step by etching described later becomes easy.
- the amount of the silver particle layer (M1) formed can be confirmed by using a known and commonly used analytical method such as a fluorescent X-ray method, an atomic absorption method, and an ICP method.
- the silver particle layer (M1) can be formed for the purpose of suppressing reflection of the active light from the silver particle layer (M1), which will be described later.
- Diimmonium compound, azo compound and other light-absorbing pigments, or dyes may be contained as a light absorber. These pigments and dyes may be appropriately selected according to the wavelength of the active light to be used. Further, these pigments and dyes can be used alone or in combination of two or more. Further, in order to contain these pigments and dyes in the silver particle layer (M1), these pigments and dyes may be blended in the silver particle dispersion liquid described later.
- the silver particle dispersion liquid used to form the silver particle layer (M1) is one in which silver particles are dispersed in a solvent.
- the shape of the silver particles is not particularly limited as long as it can form the silver particle layer (M1) satisfactorily, and has various shapes such as spherical, lenticular, polyhedral, flat plate, rod, and wire.
- Silver particles can be used. These silver particles may be used as one type having a single shape, or may be used in combination with two or more types having different shapes.
- the average particle diameter is in the range of 1 to 20,000 nm. Further, when a fine circuit pattern is formed, the homogeneity of the silver particle layer (M1) is further improved, and the removability by an etching solution described later can be further improved, so that the average particle diameter is in the range of 1 to 200 nm. Those in the range of 1 to 50 nm are more preferable, and those in the range of 1 to 50 nm are further preferable.
- the "average particle size" of the nanometer-sized particles is a volume average value measured by a dynamic light scattering method obtained by diluting the metal particles with a good dispersion solvent. "Nanotrack UPA-150" manufactured by Microtrack Co., Ltd. can be used for this measurement.
- the silver particles have a shape such as a lens shape, a rod shape, or a wire shape
- those having a minor axis in the range of 1 to 200 nm are preferable, those having a minor axis in the range of 2 to 100 nm are more preferable, and those having a minor diameter in the range of 5 to 50 nm are more preferable. Those in the range of are more preferable.
- the silver particles preferably contain silver particles as a main component, but the silver particles are described above as long as they do not interfere with the plating step described later or impair the removability of the silver particle layer (M1) described later by the etching solution.
- a part of silver constituting the silver particles may be replaced with another metal, or a metal component other than silver may be mixed.
- Examples of the metal to be substituted or mixed include one or more metal elements selected from the group consisting of gold, platinum, palladium, ruthenium, tin, copper, nickel, iron, cobalt, titanium, indium and iridium.
- the ratio of the metal to be substituted or mixed with respect to the silver particles is preferably 5% by mass or less in the silver particles, and is 2% by mass from the viewpoint of the plating property of the silver particle layer (M1) and the removability by the etching solution. % Or less is more preferable.
- the silver particle dispersion used to form the silver particle layer (M1) is one in which silver particles are dispersed in various solvents, and the particle size distribution of the silver particles in the dispersion is uniform in a single dispersion. It may be a mixture of particles within the above average particle size range.
- an aqueous medium or an organic solvent can be used as the solvent used for the dispersion liquid of the silver particles.
- the aqueous medium include distilled water, ion-exchanged water, pure water, ultrapure water, and a mixture of the water and an organic solvent to be mixed with the water.
- Examples of the organic solvent to be mixed with water include alcohol solvents such as methanol, ethanol, n-propanol, isopropanol, ethyl carbitol, ethyl cellosolve and butyl cellosolve; ketone solvents such as acetone and methyl ethyl ketone; ethylene glycol, diethylene glycol and propylene.
- Examples thereof include an alkylene glycol solvent such as glycol; a polyalkylene glycol solvent such as polyethylene glycol, polypropylene glycol and polytetramethylene glycol; and a lactam solvent such as N-methyl-2-pyrrolidone.
- Examples of the organic solvent include alcohol compounds, ether compounds, ester compounds, ketone compounds and the like.
- Examples of the alcohol solvent or ether solvent include methanol, ethanol, n-propanol, isopropyl alcohol, n-butanol, isobutyl alcohol, sec-butanol, tert-butanol, heptanol, hexanol, octanol, nonanol, decanol, undecanol, and dodecanol.
- Tridecanol Tetradecanol, Pentadecanol, Stearyl Alcohol, Allyl Alcohol, Cyclohexanol, Terpineol, Tarpineol, Dihydroterpineol, 2-Ethyl-1,3-hexanediol, Ethylene Glycol, Diethylene Glycol, Triethylene Glycol, Polyethylene Glycol, Propylene glycol, dipropylene glycol, 1,2-butanediol, 1,3-butanediol, 1,4-butanediol, 2,3-butanediol, glycerin, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol Monobutyl Ether, Diethylene Glycol Monoethyl Ether, Diethylene Glycol Monomethyl Ether, Diethylene Glycol Monobutyl Ether, Tetraethylene Glycol Monobutyl Ether, Propylene Glycol Monomethyl
- Examples of the ketone solvent include acetone, cyclohexanone, methyl ethyl ketone and the like.
- Examples of the ester solvent include ethyl acetate, butyl acetate, 3-methoxybutyl acetate, 3-methoxy-3-methyl-butyl acetate and the like.
- a hydrocarbon solvent such as toluene, particularly a hydrocarbon solvent having 8 or more carbon atoms can be mentioned.
- hydrocarbon solvent having 8 or more carbon atoms examples include non-polar solvents such as octane, nonane, decane, dodecane, tridecane, tetradecane, cyclooctane, xylene, mesitylene, ethylbenzene, dodecylbenzene, tetraline, and trimethylbenzenecyclohexane. It can be used in combination with other solvents as needed. Further, a solvent such as mineral spirit or solvent naphtha which is a mixed solvent can be used in combination.
- non-polar solvents such as octane, nonane, decane, dodecane, tridecane, tetradecane, cyclooctane, xylene, mesitylene, ethylbenzene, dodecylbenzene, tetraline, and trimethylbenzenecyclohexane. It can be used in combination with other solvent
- the silver particles are stably dispersed, and the silver particle layer is placed on the insulating base material (A) or the primer layer (B) formed on the insulating base material (A) described later.
- the solvent may be used alone or in combination of two or more.
- the content of silver particles in the silver particle dispersion is such that the amount of the silver particle layer (M1) formed on the insulating substrate (A) is 0.01 to 30 g by using the various coating methods described above. It may be adjusted appropriately so as to be in the range of / m 2 , and adjusted so as to have a viscosity having optimum coating suitability according to the above-mentioned various coating methods, but in the range of 0.1 to 50% by mass. Is preferable, and the range of 0.5 to 20% by mass is more preferable.
- the silver particles do not aggregate, fuse, or precipitate in the various solvent media, and the dispersion stability is maintained for a long period of time, and the silver particles are dispersed in the various solvents.
- a dispersant for causing the reaction a dispersant having a functional group that coordinates with the metal particles is preferable, and for example, a carboxyl group, an amino group, a cyano group, an acetoacetyl group, a phosphorus atom-containing group, a thiol group, a thiosianato group, and a glycinato.
- Dispersants having a functional group such as a group can be mentioned.
- the dispersant a commercially available or independently synthesized low molecular weight or high molecular weight dispersant can be used, and the insulating base material to which a solvent for dispersing metal particles or a dispersion liquid of metal particles is applied is applied. It may be appropriately selected according to the purpose such as the type of (A).
- the adhesion between these two layers becomes good, so that the reaction of the resin used for the primer layer (B) described later. It is preferable to use a compound having a reactive functional group [Y] capable of forming a bond with the sex functional group [X].
- Examples of the compound having a reactive functional group [Y] include an amino group, an amide group, an alkyrole amide group, a keto group, a carboxyl group, an anhydrous carboxyl group, a carbonyl group, an acetoacetyl group, an epoxy group and an alicyclic epoxy group. , Oxetane ring, vinyl group, allyl group, (meth) acryloyl group, (blocked) isocyanate group, (alkoxy) silyl group and the like, silsesquioxane compound and the like.
- the reactive functional group [Y] is preferably a basic nitrogen atom-containing group because the adhesion between the primer layer (B) and the metal particle layer (M1) can be further improved.
- the basic nitrogen atom-containing group include an imino group, a primary amino group, a secondary amino group and the like.
- the basic nitrogen atom-containing group may be singular or plural in one molecule of the dispersant. By containing a plurality of basic nitrogen atoms in the dispersant, some of the basic nitrogen atom-containing groups contribute to the dispersion stability of the metal particles by interacting with the metal particles, and the remaining basic nitrogen. The atom-containing group contributes to improving the adhesion to the insulating base material (A). Further, when a resin having a reactive functional group [X] is used for the primer layer (B) described later, the basic nitrogen atom-containing group in the dispersant is between the reactive functional group [X]. It is preferable because a bond can be formed with the above and the adhesion of the metal pattern layer (M3) described later on the insulating base material (A) can be further improved.
- the dispersant can form a silver particle layer (M1) that exhibits stability, coatability, and good adhesion on the insulating base material (A), the dispersant is a dispersant.
- the polymer dispersant is preferable, and as the polymer dispersant, polyalkyleneimine such as polyethyleneimine and polypropyleneimine, and a compound in which polyoxyalkylene is added to the polyalkyleneimine are preferable.
- the compound to which polyoxyalkylene is added to the polyalkyleneimine may be a compound in which polyethyleneimine and polyoxyalkylene are bonded in a linear manner, and the side of the main chain made of polyethyleneimine is the side thereof.
- the chain may be grafted with polyoxyalkylene.
- the compound in which polyoxyalkylene is added to the polyalkyleneimine include a block copolymer of polyethyleneimine and polyoxyethylene, and ethylene oxide in a part of the imino group present in the main chain of polyethyleneimine.
- examples thereof include those in which a polyoxyethylene structure is introduced by an addition reaction, and those in which an amino group possessed by polyalkyleneimine, a hydroxyl group possessed by polyoxyethylene glycol, and an epoxy group possessed by an epoxy resin are reacted.
- Examples of the commercially available product of the polyalkyleneimine include “PAO2006W”, “PAO306”, “PAO318” and “PAO718” of "Epomin (registered trademark) PAO series” manufactured by Nippon Shokubai Co., Ltd.
- the number average molecular weight of the polyalkyleneimine is preferably in the range of 3,000 to 30,000.
- the amount of the dispersant required to disperse the silver particles is preferably in the range of 0.01 to 50 parts by mass with respect to 100 parts by mass of the silver particles, and is on the insulating substrate (A).
- a silver particle layer (M1) showing good adhesion can be formed on the primer layer (B) described later, the range of 0.1 to 10 parts by mass is preferable with respect to 100 parts by mass of the silver particles. Further, since the plating property of the silver particle layer (M1) can be improved, the range of 0.1 to 5 parts by mass is more preferable.
- the method for producing the dispersion liquid of silver particles is not particularly limited and can be produced by using various methods.
- silver particles produced by a gas phase method such as an evaporation method in a low vacuum gas can be used as a solvent. It may be dispersed therein, or the silver compound may be reduced in the liquid phase to directly prepare a dispersion of silver particles.
- the solvent composition of the dispersion liquid at the time of production and the dispersion liquid at the time of coating can be changed as appropriate by exchanging the solvent or adding a solvent.
- the liquid phase method can be particularly preferably used because of the stability of the dispersion liquid and the simplicity of the manufacturing process.
- a liquid phase method for example, it can be produced by reducing silver ions in the presence of the polymer dispersant.
- the dispersion liquid of silver particles may further contain an organic compound such as a surfactant, a leveling agent, a viscosity modifier, a film forming aid, an antifoaming agent, and an antiseptic.
- an organic compound such as a surfactant, a leveling agent, a viscosity modifier, a film forming aid, an antifoaming agent, and an antiseptic.
- surfactant examples include nonions such as polyoxyethylene nonylphenyl ether, polyoxyethylene lauryl ether, polyoxyethylene styrylphenyl ether, polyoxyethylene sorbitol tetraoleate, and polyoxyethylene / polyoxypropylene copolymer.
- fatty acid salts such as sodium oleate, alkyl sulfate ester salts, alkylbenzene sulfonates, alkyl sulfosuccinates, naphthalene sulfonates, polyoxyethylene alkyl sulfates, alkane sulfonate sodium salts, sodium alkyldiphenyl ether sulfonates
- Anionic surfactants such as salts
- cationic surfactants such as alkylamine salts, alkyltrimethylammonium salts, and alkyldimethylbenzylammonium salts can be mentioned.
- leveling agent a general leveling agent can be used, and examples thereof include silicone-based compounds, acetylenediol-based compounds, and fluorine-based compounds.
- a general thickener can be used as the viscosity modifier.
- an acrylic polymer that can be thickened by adjusting it to alkaline, a synthetic rubber latex, and a thickening agent by associating molecules can be used.
- examples thereof include urethane resin, hydroxyethyl cellulose, carboxymethyl cellulose, methyl cellulose, polyvinyl alcohol, water-added castor oil, amido wax, polyethylene oxide, metal soap, and dibenzylidene sorbitol.
- a general film-forming auxiliary can be used.
- an anionic surfactant such as dioctyl sulfosuccinate sodium salt, a hydrophobic nonionic surfactant such as sorbitan monooleate, etc. can be used.
- a general defoaming agent can be used, and examples thereof include silicone-based defoaming agents, nonionic-based surfactants, polyethers, higher alcohols, and polymer-based surfactants.
- a general preservative can be used, for example, an isothiazoline-based preservative, a triazine-based preservative, an imidazole-based preservative, a pyridine-based preservative, an azole-based preservative, a pyrithione-based preservative, and the like. Can be mentioned.
- the laminate for the semi-additive method provided with this primer layer is preferable because the adhesion of the conductive layer (M3) to the insulating base material (A) can be further improved.
- the primer layer (B) is coated with a primer on a part or the entire surface of the insulating base material (A) to remove solvents such as an aqueous medium and an organic solvent contained in the primer. Can be formed.
- the primer is used for the purpose of improving the adhesion of the conductive layer (M3) to the insulating base material (A), and is a liquid in which various resins described later are dissolved or dispersed in a solvent. It is a composition.
- the method of applying the primer to the insulating base material (A) is not particularly limited as long as the primer layer (B) can be formed well, and various coating methods can be used for the insulating base material (A). It may be appropriately selected according to the shape, size, degree of flexibility and the like. Specific coating methods include, for example, a gravure method, an offset method, a flexographic method, a pad printing method, a gravure offset method, a letterpress method, a letterpress inversion method, a screen method, a microcontact method, a reverse method, and an air doctor coater method.
- Blade coater method air knife coater method, squeeze coater method, impregnation coater method, transfer roll coater method, kiss coater method, cast coater method, spray coater method, inkjet method, die coater method, spin coater method, bar coater method, dip coater method. And so on.
- the method of applying the primer to both surfaces of the film, the sheet, and the plate-shaped insulating base material (A) is not particularly limited as long as the primer layer (B) can be formed well, and the coating illustrated above is exemplified.
- the construction method may be selected as appropriate.
- the primer layer (B) may be simultaneously formed on both surfaces of the insulating base material (A), and may be formed on one side of the insulating base material (A) and then on the other side. You may.
- the insulating base material (A) may be surface-treated before the primer is applied for the purpose of improving the coatability of the primer and improving the adhesion of the conductive layer (M3) to the base material. ..
- the surface treatment method for the insulating base material (A) the same method as the surface treatment method for forming the silver particle layer (M1) on the insulating base material (A) described above can be used. ..
- drying using a dryer As a method of applying the primer to the surface of the insulating base material (A) and then removing the solvent contained in the coating layer to form the primer layer (B), for example, drying using a dryer is used.
- the method of volatilizing the solvent is common.
- the drying temperature may be set to a temperature within a range in which the solvent can be volatilized and does not adversely affect the insulating base material (A), and may be room temperature drying or heat drying.
- the specific drying temperature is preferably in the range of 20 to 350 ° C, more preferably in the range of 60 to 300 ° C.
- the drying time is preferably in the range of 1 to 200 minutes, more preferably in the range of 1 to 60 minutes.
- the above drying may be performed by blowing air, or may not be blown in particular. Further, the drying may be carried out in the atmosphere, in a substitution atmosphere such as nitrogen or argon, in an air flow, or in a vacuum.
- a substitution atmosphere such as nitrogen or argon
- the insulating base material (A) When the insulating base material (A) is a single-leaf film, sheet, or board, it can be naturally dried at the coating site, blown air, or in a dryer such as a constant temperature dryer. When the insulating base material (A) is a roll film or a roll sheet, the roll material is dried by continuously moving the roll material in the installed non-heated or heated space following the coating process. It can be performed.
- the film thickness of the primer layer (B) may be appropriately selected depending on the specifications and applications of the printed wiring board manufactured using the present invention, but the insulating base material (A) and the metal pattern layer (M2) are used.
- the range of 10 nm to 30 ⁇ m is preferable, the range of 10 nm to 1 ⁇ m is more preferable, and the range of 10 nm to 500 nm is further preferable, because the adhesion of the material can be further improved.
- the resin forming the primer layer (B) is a reactive functional group having a reactivity with the reactive functional group [Y].
- a resin having [X] is preferable.
- the reactive functional group [X] include an amino group, an amide group, an alkyrole amide group, a keto group, a carboxyl group, an anhydrous carboxyl group, a carbonyl group, an acetoacetyl group, an epoxy group, an alicyclic epoxy group and an oxetane.
- Examples thereof include a ring, a vinyl group, an allyl group, a (meth) acryloyl group, a (blocked) isocyanate group, and a (alkoxy) silyl group.
- a silsesquioxane compound can also be used as the compound forming the primer layer (B).
- the adhesion of the conductive layer (M3) on the insulating substrate (A) can be further improved.
- the resin forming the primer layer (B) has a keto group, a carboxyl group, a carbonyl group, an acetoacetyl group, an epoxy group, an alicyclic epoxy group, an alkylolamide group, an isocyanate group and vinyl as the reactive functional group [X]. Those having a group, a (meth) acryloyl group, and an allyl group are preferable.
- Examples of the resin forming the primer layer (B) include a urethane resin, an acrylic resin, a core-shell type composite resin having a urethane resin as a shell and an acrylic resin as a core, an epoxy resin, an imide resin, an amide resin, and a melamine resin. , Phenolic resin, urea formaldehyde resin, blocked isocyanate obtained by reacting polyisocyanate with a blocking agent such as phenol, polyvinyl alcohol, polyvinylpyrrolidone and the like.
- the core-shell type composite resin having a urethane resin as a shell and an acrylic resin as a core can be obtained, for example, by polymerizing an acrylic monomer in the presence of a urethane resin. Further, these resins can be used alone or in combination of two or more.
- a resin that produces a reducing compound by heating is preferable because the adhesion of the conductive layer (M3) to the insulating substrate (A) can be further improved.
- the reducing compound include phenol compounds, aromatic amine compounds, sulfur compounds, phosphoric acid compounds, aldehyde compounds and the like. Among these reducing compounds, phenol compounds and aldehyde compounds are preferable.
- a reducing compound such as formaldehyde or phenol is produced in the heating and drying step when forming the primer layer (B).
- the resin that produces a reducing compound by heating include a resin obtained by polymerizing a monomer containing N-alkyrole (meth) acrylamide, and N-alkyrole (meth) acrylamide using a urethane resin as a shell.
- Core-shell type composite resin with a polymer polymer resin as the core urea-formaldehyde-methanol condensate, urea-melamine-formaldehyde-methanol condensate, poly N-alkoxymethylol (meth) acrylamide, poly (meth)
- examples thereof include a formaldehyde adduct of acrylamide, a resin that produces formaldehyde by heating a melamine resin, and the like; a resin that produces a phenol compound by heating a phenol resin, a phenol block isocyanate, and the like.
- a core-shell type composite resin having a urethane resin as a shell and a resin obtained by polymerizing a monomer containing N-alkyrole (meth) acrylamide as a core, a melamine resin, and a phenol Blocked isocyanate is preferred.
- (meth) acrylamide refers to one or both of “methacrylamide” and “acrylamide”
- (meth) acrylic acid refers to "methacrylic acid” and "acrylic acid”. Refers to one or both.
- the resin that produces a reducing compound by heating is obtained by polymerizing a monomer having a functional group that produces a reducing compound by heating by a polymerization method such as radical polymerization, anionic polymerization, or cationic polymerization.
- Examples of the monomer having a functional group that produces a reducing compound by heating include N-alkyrole vinyl monomer, and specific examples thereof include N-methylol (meth) acrylamide and N-methoxymethyl (N-methoxymethyl). Meta) acrylamide, N-ethoxymethyl (meth) acrylamide, N-propoxymethyl (meth) acrylamide, N-isopropoxymethyl (meth) acrylamide, Nn-butoxymethyl (meth) acrylamide, N-isobutoxymethyl (meth) ) Acrylamide, N-pentoxymethyl (meth) acrylamide, N-ethanol (meth) acrylamide, N-propanol (meth) acrylamide and the like.
- a monomer having a functional group that produces a reducing compound by heating when producing a resin that produces a reducing compound by heating, a monomer having a functional group that produces a reducing compound by heating, and various other types such as (meth) acrylic acid alkyl ester are used.
- the monomers can also be copolymerized.
- a uretdione bond is formed by self-reacting between the isocyanate groups, or an isocyanate group and a functional group possessed by another component are used.
- the bond formed at this time may be formed before the metal particle dispersion liquid is applied, or is not formed before the metal particle dispersion liquid is applied, and the metal particle dispersion liquid is not formed. May be formed by heating after coating.
- Examples of the blocked isocyanate include those having a functional group formed by blocking the isocyanate group with a blocking agent.
- the blocked isocyanate is preferably one having the functional group in the range of 350 to 600 g / mol per 1 mol of the blocked isocyanate.
- the functional group preferably has 1 to 10 in one molecule of the blocked isocyanate, and more preferably 2 to 5.
- the number average molecular weight of the blocked isocyanate is preferably in the range of 1,500 to 5,000, more preferably in the range of 1,500 to 3,000, from the viewpoint of improving adhesion.
- the blocked isocyanate one having an aromatic ring is preferable from the viewpoint of further improving the adhesion.
- the aromatic ring include a phenyl group and a naphthyl group.
- the blocked isocyanate can be produced by reacting a part or all of the isocyanate groups of the isocyanate compound with the blocking agent.
- Examples of the isocyanate compound as a raw material of the blocked isocyanate include 4,4'-diphenylmethane diisocyanate, 2,4'-diphenylmethane diisocyanate, carbodiimide-modified diphenylmethane diisocyanate, crude diphenylmethane diisocyanate, phenylenediocyanate, tolylene diisocyanate, naphthalenedi isocyanate and the like.
- Polyisocyanate compound having an aromatic ring an aliphatic polyisocyanate compound such as hexamethylene diisocyanate, lysine diisocyanate, cyclohexanediisocyanate, isophorone diisocyanate, dicyclohexylmethane diisocyanate, xylylene diisocyanate, tetramethylxylylene diisocyanate, or polyisocyanate having an alicyclic structure.
- Examples include compounds.
- those burette form, isocyanurate form, adduct form and the like of the said polyisocyanate compound are also mentioned.
- examples of the isocyanate compound include those obtained by reacting the polyisocyanate compound exemplified above with a compound having a hydroxyl group or an amino group.
- polyisocyanate compound having an aromatic ring When introducing an aromatic ring into the blocked isocyanate, it is preferable to use a polyisocyanate compound having an aromatic ring.
- polyisocyanate compounds having an aromatic ring 4,4'-diphenylmethane diisocyanate, tolylene diisocyanate, isocyanurate of 4,4'-diphenylmethane diisocyanate, and isocyanurate of tolylene diisocyanate are preferable.
- Examples of the blocking agent used for producing the blocked isocyanate include phenol compounds such as phenol and cresol; lactam compounds such as ⁇ -caprolactam, ⁇ -valerolactam and ⁇ -butyrolactam; Oxime compounds such as methyl ethyl keto oxime, methyl isobutyl keto oxime, cyclohexanone oxime; 2-hydroxypyridine, butyl cellosolve, propylene glycol monomethyl ether, benzyl alcohol, methanol, ethanol, n-butanol, isobutanol, dimethyl malonate, diethyl malonate, acet Methyl acetate, ethyl acetoacetate, acetylacetone, butyl mercaptan, dodecyl mercaptan, acetoanilide, acetate amide, succinate imide, maleate imide, imidazole, 2-methyl imidazole, urea, thiour
- a blocking agent capable of dissociating to generate an isocyanate group by heating in the range of 70 to 200 ° C. is preferable, and a block capable of producing an isocyanate group dissociating by heating in the range of 110 to 180 ° C. is preferable.
- Agents are more preferred. Specifically, a phenol compound, a lactam compound, and an oxime compound are preferable, and a phenol compound is more preferable because it becomes a reducing compound when the blocking agent is desorbed by heating.
- Examples of the method for producing the blocked isocyanate include a method of mixing and reacting the isocyanate compound produced in advance with the blocking agent, a method of mixing and reacting the blocking agent with a raw material used for producing the isocyanate compound, and the like. Can be mentioned.
- the blocked isocyanate produces an isocyanate compound having an isocyanate group at the terminal by reacting the polyisocyanate compound with a compound having a hydroxyl group or an amino group, and then the isocyanate compound and the block. It can be produced by mixing and reacting with an agent.
- the content ratio of the blocked isocyanate obtained by the above method in the resin forming the primer layer (B) is preferably in the range of 50 to 100% by mass, more preferably in the range of 70 to 100% by mass.
- the melamine resin examples include mono or polymethylol melamine in which 1 to 6 mol of formaldehyde is added to 1 mol of melamine; (poly) methylol melamine such as trimethoxymethylol melamine, tributoxymethylol melamine, and hexamethoxymethylol melamine. Ethereate (arbitrary degree of etherification); urea-melamine-formaldehyde-methanol condensate and the like.
- a method of adding a reducing compound to the resin can also be mentioned.
- the reducing compound to be added include phenol-based antioxidants, aromatic amine-based antioxidants, sulfur-based antioxidants, phosphoric acid-based antioxidants, vitamin C, vitamin E, and ethylenediamine tetraacetic acid. Examples thereof include sodium, sulfite, hypophosphoric acid, hypophosphite, hydrazine, formaldehyde, sodium hydride, dimethylamine borane, phenol and the like.
- the method of adding a reducing compound to a resin may result in deterioration of electrical properties due to the residual low molecular weight component or ionic compound. Therefore, a resin that produces a reducing compound by heating. Is more preferable.
- a resin containing a compound having an aminotriazine ring can be mentioned.
- the compound having an aminotriazine ring may be a compound having a low molecular weight or a resin having a higher molecular weight.
- various additives having an aminotriazine ring can be used.
- Commercially available products include 2,4-diamino-6-vinyl-s-triazine (“VT” manufactured by Shikoku Kasei Co., Ltd.), “VD-3” and “VD-4” manufactured by Shikoku Kasei Co., Ltd. (with aminotriazine ring).
- VT 2,4-diamino-6-vinyl-s-triazine
- VD-3 and “VD-4” manufactured by Shikoku Kasei Co., Ltd. (with aminotriazine ring).
- VD-5" manufactured by Shikoku Kasei Co., Ltd.
- compound having an aminotriazine ring and an ethoxysilyl group and the like can be mentioned.
- These can be used by adding one kind or two or more kinds to the resin forming the primer layer (B) as an additive.
- the amount of the low molecular weight compound having an aminotriazine ring is preferably 0.1 parts by mass or more and 50 parts by mass or less, and more preferably 0.5 parts by mass or more and 10 parts by mass or less with respect to 100 parts by mass of the resin. ..
- a resin in which an aminotriazine ring is introduced by a covalent bond in the polymer chain of the resin can also be preferably used.
- Specific examples thereof include aminotriazine-modified novolak resins.
- the aminotriazine-modified novolak resin is a novolak resin in which an aminotriazine ring structure and a phenol structure are bonded via a methylene group.
- the aminotriazine-modified novolak resin contains, for example, an aminotriazine compound such as melamine, benzoguanamine, and acetoguanamine, a phenol compound such as phenol, cresol, butylphenol, bisphenol A, phenylphenol, naphthol, and resorcin, and formaldehyde as an alkylamine.
- the aminotriazine-modified novolak resin preferably has substantially no methylol group. Further, the aminotriazine-modified novolak resin may contain a molecule in which only the aminotriazine structure generated as a by-product during its production is methylene-bonded, a molecule in which only the phenol structure is methylene-bonded, and the like. Further, a small amount of unreacted raw material may be contained.
- phenol structure examples include phenol residues, cresol residues, butylphenol residues, bisphenol A residues, phenylphenol residues, naphthol residues, resorcin residues and the like.
- residue here means a structure in which at least one hydrogen atom bonded to the carbon of the aromatic ring is removed.
- phenol it means a hydroxyphenyl group.
- triazine structure examples include structures derived from aminotriazine compounds such as melamine, benzoguanamine, and acetoguanamine.
- the phenol structure and the triazine structure can be used alone or in combination of two or more. Further, since the adhesion can be further improved, a phenol residue is preferable as the phenol structure, and a melamine-derived structure is preferable as the triazine structure.
- the hydroxyl value of the aminotriazine-modified novolak resin is preferably 50 mgKOH / g or more and 200 mgKOH / g or less, more preferably 80 mgKOH / g or more and 180 mgKOH / g or less, and 100 mgKOH / g or more and 150 mgKOH / g because the adhesion can be further improved. It is more preferably g or less.
- the aminotriazine-modified novolak resin can be used alone or in combination of two or more.
- an aminotriazine-modified novolak resin is used as the compound having an aminotriazine ring, it is preferable to use an epoxy resin in combination.
- the epoxy resin examples include bisphenol A type epoxy resin, bisphenol F type epoxy resin, biphenyl type epoxy resin, cresol novolac type epoxy resin, phenol novolac type epoxy resin, bisphenol A novolak type epoxy resin, alcohol ether type epoxy resin, and tetrabrom. It has a structure derived from a bisphenol A type epoxy resin, a naphthalene type epoxy resin, a phosphorus-containing epoxy compound having a structure derived from a 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide derivative, and a structure derived from a dicyclopentadiene derivative. Examples thereof include epoxies of fats and oils such as epoxy resin and epoxidized soybean oil. These epoxy resins can be used alone or in combination of two or more.
- epoxy resins bisphenol A type epoxy resin, bisphenol F type epoxy resin, biphenyl type epoxy resin, cresol novolac type epoxy resin, phenol novolac type epoxy resin, and bisphenol A novolak type epoxy resin are selected because the adhesion can be further improved. It is preferable, and in particular, a bisphenol A type epoxy resin is preferable.
- the epoxy equivalent of the epoxy resin is preferably 100 g / equivalent or more and 300 g / equivalent or less, more preferably 120 g / equivalent or more and 250 g / equivalent or less, and 150 g / equivalent or more and 200 g / equivalent or less because the adhesiveness can be further improved. More preferred.
- the primer layer (B) is a layer containing an aminotriazine-modified novolak resin and an epoxy resin
- the adhesion can be further improved. Therefore, the phenolic hydroxyl group (x) in the aminotriazine-modified novolak resin and the epoxy resin are contained.
- the molar ratio [(x) / (y)] with the epoxy group (y) is preferably 0.1 or more and 5 or less, more preferably 0.2 or more and 3 or less, and further preferably 0.3 or more and 2 or less.
- a primer resin composition containing the compound having an aminotriazine ring or an epoxy resin is used.
- the primer resin composition used for forming the primer layer (B) containing the aminotriazine-modified novolak resin and the epoxy resin may contain, for example, a urethane resin, an acrylic resin, a blocked isocyanate resin, or a melamine resin, if necessary.
- Other resins such as phenol resin may be blended. These other resins may be used alone or in combination of two or more.
- the primer used to form the primer layer (B) preferably contains 1 to 70% by mass of the resin in the primer from the viewpoint of coatability and film forming property, and contains 1 to 20% by mass. The one is more preferable.
- examples of the solvent that can be used for the primer include various organic solvents and aqueous media.
- examples of the organic solvent include toluene, ethyl acetate, methyl ethyl ketone, cyclohexanone and the like
- examples of the aqueous medium include water, an organic solvent miscible with water, and a mixture thereof.
- organic solvent to be mixed with water examples include alcohol solvents such as methanol, ethanol, n-propanol, isopropanol, ethyl carbitol, ethyl cellosolve and butyl cellosolve; ketone solvents such as acetone and methyl ethyl ketone; ethylene glycol, diethylene glycol and propylene.
- alcohol solvents such as methanol, ethanol, n-propanol, isopropanol, ethyl carbitol, ethyl cellosolve and butyl cellosolve
- ketone solvents such as acetone and methyl ethyl ketone
- ethylene glycol diethylene glycol and propylene.
- alkylene glycol solvent such as glycol
- a polyalkylene glycol solvent such as polyethylene glycol, polypropylene glycol and polytetramethylene glycol
- lactam solvent such as N-methyl-2-pyrrol
- the resin forming the primer layer (B) may have a functional group that contributes to the crosslinking reaction, such as an alkoxysilyl group, a silanol group, a hydroxyl group, or an amino group, if necessary.
- the crosslinked structure formed by utilizing these functional groups may have already formed the crosslinked structure before the step of forming the silver particle layer (M1) in the subsequent step, or the silver particle layer (M1).
- the crosslinked structure may be formed after the step of forming the above.
- the crosslinked structure may be formed on the primer layer (B) before forming the conductive layer (M3).
- a crosslinked structure may be formed in the primer layer (B) by, for example, aging.
- a known substance such as a cross-linking agent, a pH adjuster, a film forming aid, a leveling agent, a thickener, a water repellent agent, and an antifoaming agent is appropriately added to the primer layer (B). May be used.
- the cross-linking agent examples include a metal chelate compound, a polyamine compound, an aziridine compound, a metal salt compound, an isocyanate compound and the like, and a thermal cross-linking agent that reacts at a relatively low temperature of about 25 to 100 ° C. to form a cross-linking structure.
- thermal cross-linking agents such as melamine-based compounds, epoxy-based compounds, oxazoline compounds, carbodiimide compounds, and blocked isocyanate compounds that react at a relatively high temperature of 100 ° C. or higher to form a cross-linking structure, and various photocross-linking agents.
- the aminotriazine-modified novolak resin and the epoxy resin are used as the primer layer (B), it is preferable to use a polyvalent carboxylic acid as the cross-linking agent in the primer resin composition.
- the polyvalent carboxylic acid include trimellitic anhydride, pyromellitic anhydride, maleic anhydride, succinic acid and the like. These cross-linking agents may be used alone or in combination of two or more. Further, among these cross-linking agents, trimellitic anhydride is preferable because the adhesion can be further improved.
- the amount of the cross-linking agent used varies depending on the type, from the viewpoint of improving the adhesion of the conductive layer (M3) on the substrate, 0.01 to 0.01 to 100 parts by mass of the resin contained in the primer.
- the range of 60 parts by mass is preferable, the range of 0.1 to 10 parts by mass is more preferable, and the range of 0.1 to 5 parts by mass is further preferable.
- the cross-linked structure may already be formed before the step of forming the silver particle layer (M1) in the subsequent step, and the cross-linking may be performed after the step of forming the silver particle layer (M1).
- the structure may be formed.
- the crosslinked structure may be formed after the step of forming the silver particle layer (M1), the crosslinked structure may be formed on the primer layer (B) before the conductive layer (M3) is formed. After forming (M3), a crosslinked structure may be formed in the primer layer (B) by, for example, aging.
- the method of forming the silver particle layer (M1) on the primer layer (B) is the same as the method of forming the silver particle layer (M1) on the insulating base material (A). be.
- the primer layer (B) has the same purpose as the insulating base material (A) for improving the coatability of the silver particle dispersion liquid and improving the adhesion of the conductive layer (M3) to the base material. Therefore, the surface treatment may be performed before applying the silver particle dispersion liquid.
- the laminate for the semi-additive method of the present invention has a conductive silver particle layer (M1) on both surfaces of the insulating base material (A), and further has through holes connecting both sides of the base material.
- the surface of the through hole is made of a silver layer to ensure conductivity.
- the silver layer that secures the conductivity on both sides of the base material is preferably formed by the silver plating method.
- the silver plating carried out to ensure the conductivity on both sides of the base material is the conductive silver particle layer (M1) on both surfaces of the insulating base material (A).
- the copper layer (M2) are sequentially laminated, and can be produced using a base material having a layer thickness of the copper layer (M2) of 0.1 ⁇ m to 2 ⁇ m.
- the silver plating for ensuring the conductivity on both sides of the substrate is preferably electroless silver plating using a palladium catalyst.
- the electroless silver plating is performed by applying a palladium catalyst to the surface of the substrate, but as a pre-step of the plating reaction, soft etching or micro-etching to remove the palladium catalyst adsorbed on the conductive seed other than the inner wall surface of the through hole or micro. There is a process called etching.
- the copper layer (M2) protects the conductive silver particle layer (M1) in the etching step for removing the palladium catalyst adsorbed on the surface other than the inner wall surface of the through hole in the electroless silver plating step. be.
- the thickness of the copper layer (M2) is the silver particle layer (M1) in the step of etching the copper layer (M2) to expose the conductive silver particle layer (M1), which is a step before silver plating. ) Is not damaged and is efficiently exposed, preferably 0.1 ⁇ m to 2 ⁇ m, and more preferably 0.5 ⁇ m to 1.5 ⁇ m.
- a dry or wet copper plating method is performed on the conductive silver particle layer (M1). It can be formed by. It was
- Examples of the above-mentioned dry copper plating method include vacuum vapor deposition, ion plating, and sputtering.
- Examples of the treatment by the wet copper plating method include electroless copper plating using the silver particle layer (M1) as a plating catalyst, electrolytic copper plating, and a combination of electrolytic copper plating and electrolytic copper plating. When electrolytic plating is used, the plating precipitation rate can be increased, which is advantageous because the production efficiency is high.
- the copper plating method for forming the copper layer (M2) on the silver particle layer (M1) is not particularly limited, and is formed by a dry plating method such as a vacuum plating method, an ion plating method, or a sputtering method. It may be formed by a wet plating method such as a non-electrolytic copper plating method, an electrolytic copper plating method, a combination of electroless copper plating and electrolytic copper plating, or a dry plating method and a wet plating method. It may be formed by combining the methods. In any of the above cases, a known and commonly used copper plating method can be preferably used.
- a copper layer (M3) having the same thickness on the silver particle layers (A) on both surfaces of the insulating base material (A).
- the surface of the silver particle layer (M1) may be surface-treated, if necessary.
- the surface treatment includes cleaning treatment with an acidic or alkaline cleaning liquid, corona treatment, plasma treatment, UV treatment, vapor phase ozone treatment, and liquid under the condition that the surface of the silver particle layer (M1) and the formed resist pattern are not damaged. Examples include phase ozone treatment and treatment with a surface treatment agent. These surface treatments can be performed by one method or by using two or more methods in combination.
- the silver plating carried out to ensure the conductivity on both sides of the base material is the conductive silver particle layer (M1) on both surfaces of the insulating base material (A).
- the peelable cover layer (RC) can also be produced by using a substrate in which sequentially are laminated.
- the peelable cover layer (RC) is laminated on the silver particle layer (M1) to form through holes penetrating both sides, which will be described later, when the laminate for the semi-additive method of the present invention is manufactured. Electroless plating in the process of preventing organic and inorganic dust (smear) generated in the process from adhering to the surface of the silver particle layer (M1) and making the inner wall surface of the formed through holes conductive. It prevents the catalyst from adhering to the conductive silver particle layer (M1) and protects the silver particle layer (M1).
- the material of the peelable cover layer (RC) is a pretreatment step of a step of using it as a conductive seed for electrolytic copper plating for forming a circuit pattern layer (M3) described later in the method for manufacturing a printed wiring board of the present invention.
- various commercially available resin films can be used without particular limitation, but polyethylene, polypropylene, and polyethylene terephthalate films are preferable. Can be used for.
- peelable cover layer one having a silicone layer for improving the peelability on a film such as polyethylene, polypropylene, or polyethylene terephthalate may be used.
- the film thickness of the peelable cover layer (RC) used in the present invention is determined from the viewpoint of the handleability of the film, the protection of the silver particle layer (M1), and the ease of forming through holes in the substrate. It is preferably 10 to 100 ⁇ m, more preferably 15 to 70 ⁇ m.
- the peelable cover layer (RC) used in the present invention can be laminated on the silver particle layer (M1) after the silver particle layer (M1) is coated.
- the silver particle layer (M1) when coated with a roll coater, it can be laminated by winding the peelable cover layer (RC) together at the time of winding.
- an alkali-soluble resin may also be used.
- the alkali-soluble resin is not particularly limited as long as it can be developed with an alkaline developer, and known and commonly used ones can be used.
- an amidimide resin or an alkali such as a carboxyl group or a phenolic hydroxyl group can be used.
- examples thereof include resins having a soluble functional group.
- a resin solution may be coated on the silver particle layer (M1) to form a film, or a pre-filmed resin may be used.
- the silver particle layer (M1) can be coated with a roll coater in the same manner as described above, and the peelable cover layer (RC) can be wound together at the time of winding for laminating. can.
- step 1 of the method for producing a laminate for the semi-additive method of the present invention the silver particle layer (M1) and the copper layer (M2) are sequentially laminated on both surfaces of the insulating base material (A).
- the layer thickness of the copper layer (M2) is 0.1 ⁇ m to 2 ⁇ m, or the primer layer (B) is further laminated between the insulating base material (A) and the silver particle layer (M1). This is a step of forming through holes penetrating both sides of the laminated body.
- step 1 of one embodiment of the preferred manufacturing method of the laminate for the semi-additive method of the present invention the silver particle layer (M1) and the peelable cover layer are placed on both surfaces of the insulating base material (A).
- (RC) penetrates both sides of the laminated body in which the primer layer (B) is further laminated between the insulating base material (A) and the silver particle layer (M1). This is the process of forming holes.
- step 1 as a method for forming the through hole in the laminate having the copper layer (M2), a known and commonly used method may be appropriately selected. For example, copper by drilling, laser processing, or laser processing may be selected. Processing method that combines layer drilling and chemical etching of insulating substrate using oxidizing agent, alkaline agent, acidic agent, etc., hole pattern etching of copper foil using resist, oxidizing agent, alkaline agent, acidic agent Examples thereof include a processing method combining chemical etching of an insulating base material using the above.
- step 1 as a method of forming the through hole in the laminated body having the peelable cover layer (RC), a known and commonly used method may be appropriately selected, and for example, drilling, laser processing, and the like. And so on.
- the hole diameter (diameter) formed by the drilling process is preferably in the range of 0.01 to 1 mm, more preferably in the range of 0.02 to 0.5 mm, and even more preferably in the range of 0.03 to 0.1 mm. ..
- Desmia Organic and inorganic dust (smear) generated during drilling causes poor plating precipitation and deterioration of plating adhesion in the electrical connection on both sides, which will be described later, and in the plating process of forming the conductive layer (M3). It is preferable to remove dust (desmia) because it may cause a deterioration in the appearance of the plating. Desmia methods include, for example, dry treatment such as plasma treatment and reverse sputtering treatment, cleaning treatment with an aqueous solution of an oxidizing agent such as potassium permanganate, cleaning treatment with an aqueous solution of alkali or acid, and wet treatment such as cleaning treatment with an organic solvent. And so on.
- Step 2 of the method for manufacturing a laminate for a semi-additive method of the present invention is a step of applying a catalyst for electroless silver plating on the surface of the laminate having through holes formed in the step 1.
- an electroless silver plating method for ensuring conductivity on the surface of the through hole various known methods can be used, and an electroless silver plating method using a palladium catalyst can be particularly preferably used.
- an electroless silver plating method using a palladium catalyst can be particularly preferably used.
- a method for applying the palladium catalyst on the substrate various known and commonly used methods can be used, and for example, a sensitizing-activator method or a catalyst-accelerator method may be used.
- step 3 of the method for manufacturing the laminate for the semi-additive method of the present invention the copper layer (M2) is etched to remove the catalyst applied to the copper layer (M2), and the printed wiring board is manufactured.
- the conductive silver particle layer (M1) serving as a plating seed layer for forming the conductive layer (M3) is exposed.
- step 3 the chemical used for etching and removing the copper layer (M2) having a thickness of 0.1 ⁇ m to 2 ⁇ m laminated on the conductive silver particle layer (M1) efficiently etches the copper layer (M2).
- the lower silver particle layer (M1) is not damaged, there is no particular limitation, and a known and commonly used copper micro-etching solution and soft-etching solution can be used.
- the etching solution for the copper layer (M2) an aqueous solution of persulfate such as ammonium persulfate, sodium persulfate, potassium persulfate, or a sulfuric acid / hydrogen peroxide aqueous solution can be used.
- the concentration of the aqueous solution of persulfate or the aqueous solution of sulfuric acid / hydrogen peroxide is adjusted according to the thickness of the copper layer (M2) of the laminate for the semi-additive method used for manufacturing the printed wiring board, the design of the manufacturing equipment, and the like. It may be selected as appropriate, but in the process to be used, it is preferable to set the etching rate of the copper layer to be smaller than 2 ⁇ m / min, and efficient removal of the copper layer (M2) and conductive silver as an underlayer are performed. From the viewpoint of preventing damage to the particle layer (M1), 0.1 ⁇ m / min. ⁇ 1.5 ⁇ m / min. It is more preferable to set the etching rate to be the same as that of the above.
- the silver particle layer (M1) and the peelable cover layer (RC) are sequentially laminated on both surfaces of the insulating base material (A).
- the laminated body for the semi-additive method of the present invention is used.
- Step 3 of the method for manufacturing a printed wiring board using the above is a step of peeling off the peelable cover layer (RC) to expose the conductive silver particle layer (M1).
- This step is a step of exposing a conductive silver particle layer (M1) to be a plating seed layer for forming a conductive layer (M3) in a subsequent step, and is used for making through holes conductive in step 2.
- the purpose is to remove the palladium, the conductive polymer, and the carbon from the surface other than the through holes.
- the peelable cover layer (RC) may be peeled off mechanically in step 3, and various commercially available peeling devices may be used. Further, when an alkali-soluble resin is used as the peelable cover layer (RC), it can be peeled off by immersing it in an alkaline solution. As the alkaline solution used for peeling and the peeling conditions, a stripping solution for pattern resist, which will be described later, can be appropriately used.
- step 4 of the method for manufacturing the laminate for the semi-additive method of the present invention electroless silver plating is performed using a plating catalyst applied on the surface of the through hole of the base material through the steps 2 and 3. This is a step of making the through hole conductive with a silver layer.
- electroless silver plating carried out in the present invention a known and commonly used method may be used, and a commercially available electroless silver plating process can be preferably used.
- the thickness of the silver layer formed by the electrolytic silver plating on the surface of the through hole connecting both sides of the base material is the thickness of the silver layer formed in the method for manufacturing the printed wiring board of the present invention.
- the laminate for the semi-additive method of the present invention is a laminate for the semi-additive method in which the silver particle layer (M1) is used as a conductive seed after undergoing a drying step after the silver plating in the step 4, that is, an insulating substrate (that is, an insulating base material).
- a group having conductive silver particle layers (M1) on both surfaces of A) and further having through holes connecting both sides of the base material, and the surface of the through holes is secured by the silver layer. It can be used as a laminate for a semi-additive construction method, which is characterized by being a material.
- the laminate for the semi-additive method of the present invention has a primer layer (A) and conductive silver on both surfaces of the insulating base material (A) after undergoing a drying step after silver plating in the step 4. It is characterized in that it has a particle layer (M1) in this order, further has through holes connecting both sides of the base material, and the surface of the through holes is a base material whose conductivity is ensured by a silver layer. It can be used as a laminate for the semi-additive method.
- a pattern resist of a circuit pattern is formed on the conductive silver particle layer (M1) of the laminate for the semi-additive method.
- the surface of the silver particle layer (M1) is subjected to a cleaning treatment with an acidic or alkaline cleaning liquid and a corona treatment for the purpose of improving the adhesion with the resist layer before forming the resist.
- a cleaning treatment with an acidic or alkaline cleaning liquid and a corona treatment for the purpose of improving the adhesion with the resist layer before forming the resist.
- Plasma treatment, UV treatment, vapor phase ozone treatment, liquid phase ozone treatment, treatment with a surface treatment agent and the like may be performed. These surface treatments can be performed by one method or by using two or more methods in combination.
- a method described in JP-A-7-258870 a method of treatment using a rust preventive agent composed of a triazole-based compound, a silane coupling agent and an organic acid, JP-A.
- a method of treating with a surface treatment agent containing a compound, or the like can be used.
- the pattern is exposed with active light by passing a photomask through a photosensitive resist or using a direct exposure machine.
- the exposure amount may be appropriately set as needed.
- a pattern resist is formed by removing the latent image formed on the photosensitive resist by exposure using a developing solution.
- the developer examples include a dilute alkaline aqueous solution such as 0.3 to 2% by mass of sodium carbonate and potassium carbonate.
- a surfactant, a defoaming agent, a small amount of an organic solvent, or the like may be added to the dilute alkaline aqueous solution in order to accelerate development.
- the substrate exposed above is immersed in a developing solution or developed by spraying the developing solution onto a resist, and by this development, a pattern resist from which the pattern forming portion is removed can be formed. ..
- the resist residue such as may be removed.
- the photosensitive resist used in the present invention a commercially available resist ink, liquid resist, or dry film resist can be used, and the resolution of the target pattern, the type of the exposure machine used, and the chemical solution used in the plating treatment in the subsequent step can be used. It may be appropriately selected depending on the type, pH and the like.
- Examples of commercially available resist inks include “plating resist MA-830” and “etching resist X-87” manufactured by Taiyo Ink Mfg. Co., Ltd .; etching resist and plating resist manufactured by NAZDAR Co., Ltd .; “etching” manufactured by Mutual Chemical Industry Co., Ltd. Examples include the “resist PLAS FINE PER” series and the “plating resist PLAS FINE PPR” series. Examples of the electrodeposition resist include “Eagle series” and “Pepper series” manufactured by Dow Chemical Company.
- a dry film for the semi-additive method may be used.
- Commercially available dry films used for this purpose include, for example, "ALFO LDF500” and "NIT2700” manufactured by Nikko Materials Co., Ltd., “Sunfort UFG-258” manufactured by Asahi Kasei Corporation, and “RD” manufactured by Hitachi Kasei Co., Ltd. Series (RD-2015, 1225) “,” RY series (RY-5319, 5325) “,” PlateMaster series (PM200, 300) “manufactured by DuPont, and the like can be used.
- the conductive silver particle layer (M1) is used as a cathode electrode for electrolytic copper plating, as described above. Then, by performing a treatment by an electrolytic copper plating method on the silver particle layer (M1) exposed by development, the through holes of the laminated body are connected by copper plating, and at the same time, a conductive layer (M3) of a circuit pattern is formed. can do. (Step 6 of the Printed Wiring Board Manufacturing Method of the Present Invention)
- the surface of the silver particle layer (M1) may be surface-treated, if necessary.
- the surface treatment includes cleaning treatment with an acidic or alkaline cleaning liquid, corona treatment, plasma treatment, UV treatment, vapor phase ozone treatment, and liquid under the condition that the surface of the silver particle layer (M1) and the formed resist pattern are not damaged. Examples include phase ozone treatment and treatment with a surface treatment agent. These surface treatments can be performed by one method or by using two or more methods in combination.
- annealing is performed after plating for the purpose of stress relaxation and improvement of adhesion of the plating film. You may. Annealing may be performed before the etching step described later, after the etching step, or before and after the etching.
- the annealing temperature may be appropriately selected in the temperature range of 40 to 300 ° C. depending on the heat resistance of the substrate to be used and the purpose of use, but is preferably in the range of 40 to 250 ° C. for the purpose of suppressing oxidative deterioration of the plating film.
- the range of 40 to 200 ° C. is more preferable.
- the annealing time is preferably 10 minutes to 10 days in the temperature range of 40 to 200 ° C., and 5 minutes to 10 hours in the case of a temperature exceeding 200 ° C. Further, when annealing the plating film, a rust preventive may be appropriately applied to the surface of the plating film.
- step 6 of the method for manufacturing a printed wiring board of the present invention in step 5, after forming a conductive layer (M3) by plating, the pattern resist formed by using the photosensitive resist is peeled off to form a non-pattern.
- the silver particle layer (M1) of the portion is removed by an etching solution.
- the pattern resist may be peeled off under the recommended conditions described in the catalog, specifications, etc. of the photosensitive resist used.
- As the resist stripping solution used for stripping the pattern resist a commercially available resist stripping solution or a 1.5 to 3% by mass aqueous solution of sodium hydroxide or potassium hydroxide set at 45 to 60 ° C. may be used. can.
- the resist can be peeled off by immersing the substrate on which the conductive layer (M3) of the circuit pattern is formed in a stripping solution or by spraying the stripping solution with a spray or the like.
- etching solution used for removing the silver particle layer (M1) in the non-pattern forming portion only the silver particle layer (M1) is selectively etched, and the copper forming the conductive layer (M3) is the copper. Those that are not etched are preferable. Examples of such an etching solution include a mixture of a carboxylic acid and hydrogen peroxide.
- carboxylic acid examples include acetic acid, formic acid, propionic acid, butyric acid, valeric acid, caproic acid, enanthic acid, capric acid, pelargonic acid, capric acid, lauric acid, myristic acid, palmitic acid, margalic acid and stearic acid.
- Oleic acid Oleic acid, linoleic acid, linolenic acid, arachidonic acid, eikosapentaenoic acid, docosahexaenoic acid, oxalic acid, malonic acid, succinic acid, benzoic acid, salicylic acid, phthalic acid, isophthalic acid, terephthalic acid, gallic acid, melitonic acid, coconut skin
- carboxylic acids can be used alone or in combination of two or more. Among these carboxylic acids, it is preferable to mainly use acetic acid because it is easy to manufacture and handle as an etching solution.
- percarboxylic acid peroxycarboxylic acid
- M1 silver constituting the silver particle layer
- M3 dissolution of the copper constituting the conductive layer
- the mixing ratio of the mixture of the carboxylic acid and hydrogen peroxide is preferably in the range of 2 to 100 mol of hydrogen peroxide with respect to 1 mol of the carboxylic acid because the dissolution of the conductive layer (M3) of copper can be suppressed.
- Hydrogen peroxide in the range of 2 to 50 mol is more preferable.
- the mixture of the carboxylic acid and hydrogen peroxide is preferably an aqueous solution diluted with water. Further, the content ratio of the mixture of the carboxylic acid and hydrogen peroxide in the aqueous solution is preferably in the range of 2 to 65% by mass and preferably in the range of 2 to 30% by mass because the influence of the temperature rise of the etching solution can be suppressed. Is more preferable.
- water used for the above dilution it is preferable to use water from which ionic substances and impurities such as ion-exchanged water, pure water, and ultrapure water have been removed.
- a protective agent for protecting the conductive layer (M3) of copper and suppressing dissolution may be further added to the etching solution.
- the protective agent it is preferable to use an azole compound.
- azole compound examples include imidazole, pyrazole, triazole, tetrazole, oxozole, thiazole, selenazole, oxadiazole, thiadiazole, oxatriazole, and thiatriazole.
- azole compound examples include, for example, 2-methylbenzimidazole, aminotriazole, 1,2,3-benzotriazole, 4-aminobenzotriazole, 1-bisaminomethylbenzotriazole, aminotetrazole, phenyltetrazole, 2 -Phenylthiazole, benzothiazole and the like can be mentioned. These azole compounds may be used alone or in combination of two or more.
- the concentration of the azole compound in the etching solution is preferably in the range of 0.001 to 2% by mass, more preferably in the range of 0.01 to 0.2% by mass.
- the dissolution of the conductive layer (M3) of copper can be suppressed in the etching solution, it is preferable to add polyalkylene glycol as a protective agent.
- polyalkylene glycol examples include water-soluble polymers such as polyethylene glycol, polypropylene glycol, and polyoxyethylene polyoxypropylene block copolymer. Among these, polyethylene glycol is preferable.
- the number average molecular weight of the polyalkylene glycol is preferably in the range of 200 to 20,000.
- the concentration of the polyalkylene glycol in the etching solution is preferably in the range of 0.001 to 2% by mass, more preferably in the range of 0.01 to 1% by mass.
- Additives such as sodium salt, potassium salt and ammonium salt of organic acid may be added to the etching solution as necessary in order to suppress fluctuations in pH.
- the silver particle layer (M1) in the non-pattern forming portion was removed by forming the conductive layer (M3) and then peeling off the pattern resist formed by using the photosensitive resist. This can be done by immersing the substrate in the etching solution or by spraying the etching solution onto the substrate by spraying or the like.
- each component of the etching solution may be individually supplied to the etching apparatus, and the respective components may be mixed in the apparatus to prepare a predetermined composition.
- the etching solution is preferably used in a temperature range of 10 to 35 ° C., and particularly when an etching solution containing hydrogen peroxide is used, decomposition of hydrogen peroxide can be suppressed, so that the temperature range is 30 ° C. or lower. It is preferable to use in.
- the silver particle layer (M1) is removed with the etching solution, further cleaning operations are performed in addition to washing with water for the purpose of preventing the silver component dissolved in the etching solution from adhering to and remaining on the printed wiring board. You may go.
- a cleaning solution that dissolves silver oxide, silver sulfide, and silver chloride, but hardly dissolves silver.
- Examples of the thiosulfate include ammonium thiosulfate, sodium thiosulfate, potassium thiosulfate and the like.
- Examples of the tris (3-hydroxyalkyl) phosphine include tris (3-hydroxymethyl) phosphine, tris (3-hydroxyethyl) phosphine, and tris (3-hydroxypropyl) phosphine. These thiosulfates or tris (3-hydroxyalkyl) phosphines can be used alone or in combination of two or more.
- the concentration when using an aqueous solution containing a thiosulfate may be appropriately set depending on the process time, the characteristics of the cleaning device to be used, etc., but is preferably in the range of 0.1 to 40% by mass, and during cleaning efficiency and continuous use. From the viewpoint of the stability of the chemical solution, the range of 1 to 30% by mass is more preferable.
- the concentration of the aqueous solution containing tris (3-hydroxyalkyl) phosphine may be appropriately set depending on the process time, the characteristics of the cleaning device used, and the like, but is in the range of 0.1 to 50% by mass. Preferably, the range of 1 to 40% by mass is more preferable from the viewpoint of cleaning efficiency and stability of the chemical solution during continuous use.
- Examples of the mercaptocarboxylic acid include thioglycolic acid, 2-mercaptopropionic acid, 3-mercaptopropionic acid, thioapple acid, cysteine, N-acetylcysteine and the like.
- Examples of the salt of the mercaptocarboxylic acid include alkali metal salts, ammonium salts, amine salts and the like.
- the concentration is preferably in the range of 0.1 to 20% by mass, and from the viewpoint of cleaning efficiency and process cost when processing a large amount, 0.5 to 15% by mass.
- the range of is more preferable.
- Examples of the method for performing the above cleaning operation include a method of immersing a printed wiring board obtained by etching and removing the silver particle layer (M1) of the non-pattern forming portion in the cleaning chemical solution, and spraying the printed wiring board.
- a method of spraying a cleaning chemical solution with or the like can be mentioned.
- the temperature of the cleaning chemical solution can be used at room temperature (25 ° C.), but since the cleaning process can be performed stably without being affected by the outside air temperature, the temperature may be set to 30 ° C. for use.
- the step of removing the silver particle layer (M1) of the non-pattern forming portion with an etching solution and the cleaning operation can be repeated as necessary.
- the printed wiring board of the present invention is necessary for the purpose of further improving the insulating property of the non-pattern forming portion after removing the silver particle layer (M1) of the non-pattern forming portion with the etching solution as described above. Further, a cleaning operation may be performed depending on the situation. For this cleaning operation, for example, an alkaline permanganate solution in which potassium permanganate or sodium permanganate is dissolved in an aqueous solution of potassium hydroxide or sodium hydroxide can be used.
- Cleaning using the alkaline permanganate solution is a method of immersing the printed wiring board obtained by the above method in an alkaline permanganate solution set at 20 to 60 ° C., or the printed wiring board is alkaline by spraying or the like. Examples thereof include a method of spraying a permanganate solution.
- the printed wiring board is treated with a water-soluble organic solvent having an alcoholic hydroxyl group before cleaning for the purpose of improving the wettability of the alkaline permanganate solution to the surface of the substrate and improving the cleaning efficiency. You may go.
- the organic solvent include methyl alcohol, ethyl alcohol, n-propyl alcohol, isopropyl alcohol and the like. These organic solvents may be used alone or in combination of two or more.
- the concentration of the alkaline permanganate solution may be appropriately selected as needed, but potassium permanganate or permanganate is added to 100 parts by mass of 0.1 to 10% by mass of potassium hydroxide or sodium hydroxide aqueous solution. It is preferable that 0.1 to 10 parts by mass of sodium is dissolved, and from the viewpoint of cleaning efficiency, potassium permanganate or sodium permanganate is added to 100 parts by mass of 1 to 6% by mass of potassium hydroxide or sodium hydroxide aqueous solution. Is more preferably dissolved in 1 to 6 parts by mass.
- the washed printed wiring board When cleaning with the above alkaline permanganic acid solution, it is preferable to treat the washed printed wiring board with a solution having a neutralizing / reducing action after cleaning with the alkaline permanganic acid solution.
- the liquid having a neutralizing / reducing action include an aqueous solution containing 0.5 to 15% by mass of dilute sulfuric acid or an organic acid.
- the organic acid include formic acid, acetic acid, oxalic acid, citric acid, ascorbic acid, and methionine.
- the cleaning with the alkaline permanganic acid solution may be performed after the cleaning for the purpose of preventing the silver component dissolved in the etching solution from adhering to and remaining on the printed wiring board, or may be performed in the etching solution. In order to prevent the dissolved silver component from adhering to and remaining on the printed wiring board, instead of cleaning, only cleaning with an alkaline permanganic acid solution may be performed.
- the printed wiring board obtained by using the laminated body for the printed wiring board of the present invention can be appropriately used for covering the coverlay film on the circuit pattern, forming the solder resist layer, and the circuit pattern.
- the final surface treatment nickel / gold plating, nickel / palladium / gold plating, and palladium / gold plating may be performed.
- the laminated body not only the printed wiring board but also various members having a metal layer patterned on the surface of the base material on a plane, for example, a connector, an electromagnetic wave shield, an antenna such as RFID, a film capacitor, etc. can be used. Can be manufactured.
- Polyester polyol (polyolpolyol obtained by reacting 1,4-cyclohexanedimethanol, neopentylglycol, and adipic acid in a nitrogen-substituted container equipped with a thermometer, a nitrogen gas introduction tube, and a stirrer) 100 By mass, 17.6 parts by mass of 2,2-dimethylolpropionic acid, 21.7 parts by mass of 1,4-cyclohexanedimethanol, 106.2 parts by mass of dicyclohexylmethane-4,4'-diisocyanate, and 178 parts by mass of methylethylketone. By reacting in the mixed solvent of the above, a urethane prepolymer solution having an isocyanate group at the terminal was obtained.
- a monomer mixture consisting of 60 parts by mass of methyl methacrylate, 30 parts by mass of n-butyl acrylate and 10 parts by mass of Nn-butoxymethylacrylamide, and 20 parts by mass of a 0.5% by mass ammonium persulfate aqueous solution were added.
- the parts were dropped from a separate dropping funnel over 120 minutes while keeping the temperature inside the reaction vessel at 80 ° C.
- aqueous dispersion of a resin composition for a primer layer which is a core-shell type composite resin having the urethane resin as a shell layer and an acrylic resin made of methyl methacrylate or the like as a core layer, was obtained. ..
- a primer composition (B-6) was obtained by diluting and mixing so that the non-volatile content was 2% by mass.
- a vinyl monomer mixture consisting of 47.0 parts by mass of methyl methacrylate, 5.0 parts by mass of glycidyl methacrylate, 45.0 parts by mass of n-butyl acrylate, and 3.0 parts by mass of methacrylic acid in a reaction vessel under stirring.
- a part of the monomer pre-emulsion obtained by mixing 4 parts by mass of a surfactant (“Aqualon KH-1025” manufactured by Daiichi Kogyo Seiyaku Co., Ltd .: 25% by mass of the active ingredient) and 15 parts by mass of deionized water. 5 parts by mass) was added, and then 0.1 part by mass of potassium persulfate was added, and the mixture was polymerized in 60 minutes while keeping the temperature inside the reaction vessel at 70 ° C.
- the remaining monomer preemulsion 114 parts by mass
- 30 parts by mass of an aqueous solution of potassium persulfate (1.0% by mass of the active ingredient) were separately added dropwise. Dropped over 180 minutes using a funnel. After completion of the dropping, the mixture was stirred at the same temperature for 60 minutes.
- Preparation Example 1 Preparation of silver particle dispersion
- a dispersion containing the agent was prepared.
- ion-exchanged water, ethanol and a surfactant were added to the obtained dispersion to prepare a 5% by mass silver particle dispersion.
- a copper etching solution was prepared by mixing 37.5 g / L of sulfuric acid and 13.5 g / L of hydrogen peroxide with ion-exchanged water.
- the molar ratio (hydrogen / carboxylic acid) of hydrogen hydrogen and carboxylic acid in this etching solution for silver (1) is 13.6, and the hydrogen peroxide and carboxylic acid in the etching solution for silver (1)
- the content ratio of the mixture was 22.4% by mass.
- Example 1 Manufacturing of laminate for semi-additive method
- the silver particle dispersion obtained in Preparation Example 1 is placed on the surface of a polyimide film (“Kapton 100EN-C” manufactured by Toray DuPont Co., Ltd .; thickness 25 ⁇ m), which is an insulating base material, on a desktop compact coater (RK print).
- a "K printing prober” manufactured by Coat Instrument Co., Ltd. the silver particle layer after drying was coated to be 0.5 g / m 2 . Then, it was dried at 160 ° C. for 5 minutes using a hot air dryer.
- the film was turned over, and the silver particle dispersion obtained in Preparation Example 1 was coated in the same manner as above so that the silver particle layer was 0.5 g / m 2 , and the temperature was 160 ° C. using a hot air dryer. A silver particle layer was formed on both surfaces of the polyimide film by drying in. The film substrate thus obtained was fired at 250 ° C. for 5 minutes, and the continuity of the silver particle layer was confirmed with a tester.
- the polyimide film having conductive silver particle layers on both surfaces obtained above is fixed to a frame made of polyethylene, and is used in an electroless copper plating solution (“Circuposit 6550” manufactured by Roam & Haas Electronic Materials Co., Ltd.). Was immersed in 35 ° C. for 10 minutes to form electroless copper plating films (thickness 0.2 ⁇ m) on both surfaces. Next, a through hole having a diameter of 100 ⁇ m was formed in the film using a drill.
- a predip solution for electroless plating (“OPC-SAL-M”, manufactured by Okuno Pharmaceutical Industry Co., Ltd.) was diluted with water to a ratio of 260 g / L and maintained at 25 ° C. The film having through holes formed therein was immersed in this liquid for 1 minute.
- Pre-dilution liquid OPC-SAL-M, manufactured by Okuno Pharmaceutical Industry Co., Ltd.
- Sn-Pd colloidal catalyst liquid OPC-90 catalystist, manufactured by Okuno Pharmaceutical Industry Co., Ltd.
- OPC-SAL-M Sn-Pd colloidal catalyst liquid
- OPC-90 catalystist manufactured by Okuno Pharmaceutical Industry Co., Ltd.
- the activation solution (“OPC-505 Accelerator A”, manufactured by Okuno Pharmaceutical Industry Co., Ltd.) and the activation solution (“OPC-505 Accelerator B”, manufactured by Okuno Pharmaceutical Industry Co., Ltd.) were 100 mL / L, respectively. It was mixed and diluted with water to 8 mL / L and kept at 30 ° C. After immersing the object to be treated after the step of applying the catalyst compound for 5 minutes, washing with running water was performed for 2 minutes to apply a palladium catalyst to the inner wall of the through hole and the surfaces of both coppers, and then produced in Preparation Example 2. Copper was removed with a sulfuric acid / hydrogen peroxide-based copper etching solution to expose the conductive silver particle layer (M1).
- the film substrate thus obtained was immersed in the electroless silver plating solution prepared in Preparation Example 3 at 80 ° C. for 30 minutes to form a silver plating film on the inner wall of the through hole.
- the conductive silver particle layer (M1) is provided on both surfaces of the insulating base material (A), and further, through holes connecting both sides of the insulating base material are provided.
- a laminate for a semi-additive method whose surface was ensured by a silver layer was obtained.
- Example 2 A conductive silver particle layer (conducting silver particle layer) on both surfaces of the insulating base material (A) in the same manner as in Example 1 except that the immersion time in the electroless copper plating solution was changed from 10 minutes to 25 minutes.
- a laminate for a semi-additive method having M1) and further having through holes connecting both sides of the insulating base material and having the surface of the through holes secured by a silver layer was obtained.
- Example 3 The silver particle layers were formed on both surfaces of the polyimide film in the same manner as in Example 1 except that the silver particle layer after drying was changed from 0.5 g / m 2 to 0.8 g / m 2 . It was fired at 250 ° C. for 5 minutes, and the continuity of the silver particle layer was confirmed with a tester.
- a polyimide film having conductive silver particle layers on both surfaces thus obtained was fixed to a copper frame, the surface of the silver particle layer was placed on a cathode, and copper sulfate was used with phosphorus-containing copper as an anode.
- the current density is 2A.
- a silver particle layer (M1) and a copper layer (M2) having a thickness of 2 ⁇ m are formed on both surfaces of the polyimide film which is the insulating base material (A).
- the laminated body was prepared.
- the conductive silver particle layer (M1) is provided on both surfaces of the insulating base material (A) in the same manner as in Example 1, and further insulated.
- a laminate for a semi-additive construction method was obtained, which had through holes connecting both sides of the sex substrate and whose surface of the through holes was ensured by a silver layer.
- Example 4 On the surface of a polyimide film (“Capton 100EN-C” manufactured by Toray DuPont Co., Ltd., thickness 25 ⁇ m), the primer (B-1) obtained in Production Example 1 was applied to a desktop compact coater (RK Print Coat Instrument Co., Ltd.). The film was coated to a thickness of 120 nm after drying using a “K printing prober”), and then dried at 80 ° C. for 5 minutes using a hot air dryer. Further, the film was turned inside out. In the same manner as above, the primer (B-1) obtained in Production Example 1 was coated so that the thickness after drying was 120 nm, and dried at 80 ° C. for 5 minutes using a hot air dryer. Primer layers were formed on both surfaces of the polyimide film.
- a desktop compact coater RK Print Coat Instrument Co., Ltd.
- the insulating base material (A) is the same as in Example 2 except that the insulating base material (A) is changed from the polyimide film to the polyimide having primer layers formed on both surfaces of the polyimide film obtained above. ) Has a conductive silver particle layer (M1) on both surfaces, and further has through holes connecting both sides of the insulating base material, and the surface of the through holes is ensured by the silver layer. A laminate for the semi-additive method was obtained.
- Example 5 In Example 4, the silver particle layer was changed from 0.5 g / m 2 to 0.8 g / m 2 , and the electrolytic copper plating treatment was performed in the same manner as in Example 3, whereby the insulating base material ( A semi-additive method laminate in which a primer layer (B), a conductive silver particle layer (M1), and a 2 ⁇ m-thick copper layer (M2) are formed on both surfaces of the polyimide film of A) is produced. bottom. After that, in the same manner as in Example 4, the primer layer (B) and the conductive silver particle layer (M1) are provided on both surfaces of the insulating base material (A), and both sides of the insulating base material are further formed. A laminate for a semi-additive method having a through hole to be connected and having a through hole surface whose conductivity was ensured by a silver layer was obtained.
- Example 6 to 9 In Examples 1 to 4, instead of forming a copper layer (M2) on the silver particle layer (M1), a 38 ⁇ m-thick polyester releasable adhesive tape (Panac Co., Ltd.) is used as a peelable cover layer (RC).
- a conductive silver particle layer (M1) is provided on both surfaces of the insulating base material (A) in the same manner as in Examples 1 to 4, except that Panaprotect HP / CT) is laminated. Further, a laminate for a semi-additive method having a through hole connecting both sides of the insulating base material and having a through hole surface whose conductivity is ensured by a silver layer was obtained.
- Example 10 In Example 5, instead of forming a copper layer (M2) on the silver particle layer (M1), as a peelable cover layer (RC), a 38 ⁇ m thick polyester releasable adhesive tape (manufactured by Panac Co., Ltd.) A primer layer (B) and a conductive silver particle layer (M1) are provided on both surfaces of the insulating base material (A) in the same manner as in Example 5 except that Panaprotect HP / CT) is laminated. Further, a laminate for a semi-additive method having a through hole connecting both sides of the insulating base material and having a through hole surface whose conductivity was ensured by a silver layer was obtained.
- Example 11 Conductive on both surfaces of the insulating substrate (A) in the same manner as in Example 5, except that the 100 ⁇ m diameter through hole using a drill was changed to the 70 ⁇ m diameter through hole formation using a laser.
- a laminate for a semi-additive method which has a silver particle layer (M1) of the above, further has through holes for connecting both sides of an insulating base material, and the surface of the through holes is ensured by a silver layer for conductivity. rice field.
- Example 12 Conductive on both surfaces of the insulating substrate (A) in the same manner as in Example 1 except that the through hole having a diameter of 100 ⁇ m using a drill was changed to the through hole having a diameter of 70 ⁇ m using a laser.
- a laminate for a semi-additive method which has a silver particle layer (M1) of the above, further has through holes for connecting both sides of an insulating base material, and the surface of the through holes is ensured by a silver layer for conductivity. rice field.
- Example 13 to 28 Other than changing the insulating substrate type, the type of primer used for the primer layer and its drying conditions, the amount of silver in the silver particle layer, the cover layer type of the silver particle layer, and the through-hole formation method to those shown in Table 1 or 2. Obtained a laminated body for a semi-additive method in the same manner as in Examples 1 to 12.
- the through hole formation position is designed to be the connection position to the back surface solid GND at the transmission characteristic evaluation terminal of the microstrip line having a wiring length of 100 mm and an impedance of 50 ⁇ .
- a conductive silver particle layer (M1) is provided on both surfaces of the insulating base material (A), and a penetration that connects both sides of the insulating base material.
- a laminate for a semi-additive method having holes and having a through-hole surface whose conductivity was ensured by a silver layer was obtained.
- a dry film resist (“Fotech RD-1225” manufactured by Hitachi Chemical Co., Ltd .; resist film thickness 25 ⁇ m) was pressure-bonded onto the silver particle layer (M1) thus obtained at 100 ° C. using a roll laminator. Then, using a direct exposure digital imaging device (“Nuvogo1000R” manufactured by Orbotec), a microstrip line pattern with a wiring length of 100 mm and an impedance of 50 ⁇ on the resist, and a through-hole terminal connected to the GND for the measurement probe. The pad pattern was exposed.
- the surface of the silver particle layer of the base material on which the pattern resist was formed was placed on the cathode, and an electrolytic plating solution containing copper sulfate (copper sulfate 60 g / L, sulfuric acid 190 g / L, chlorine ion) with phosphorus-containing copper as an anode.
- an electrolytic plating solution containing copper sulfate (copper sulfate 60 g / L, sulfuric acid 190 g / L, chlorine ion) with phosphorus-containing copper as an anode.
- a conductive layer (M3) having a circuit pattern with a thickness of 18 ⁇ m was formed on the pattern and the probe terminal pad portion by electrolytic copper plating.
- the film obtained above was immersed in the etching solution for silver obtained in Preparation Example 4 at 25 ° C. for 30 seconds to remove the silver particle layer other than the conductive layer pattern, and a printed wiring board was obtained.
- the cross-sectional shape of the circuit forming part (microstrip line and proben terminal part) of the manufactured printed wiring board shows a rectangular shape with no decrease in wiring height and wiring width and no undercut. It was a conductive layer (M3) having a smooth surface.
- the through hole formation position is designed to be the connection position to the back surface solid GND at the transmission characteristic evaluation terminal of the microstrip line having a wiring length of 100 mm and an impedance of 50 ⁇ .
- the primer layer (B) and the conductive silver particle layer (M1) are provided in this order on both surfaces of the insulating base material (A), and further, an insulating group is provided.
- a laminate for a semi-additive construction method was obtained, which had through holes connecting both sides of the material and whose surface of the through holes was ensured by a silver layer.
- the silver particle layer (M1) has a microstrip line having a wiring length of 100 mm, an impedance of 50 ⁇ , and a copper thickness of 18 ⁇ m, and a conductive layer (M3) having a proben terminal pattern.
- a printed wiring board was produced.
- the cross-sectional shape of the manufactured printed wiring board circuit forming portion was a rectangular shape with no reduction in wiring height and wiring width and no undercut, and was a conductive layer (M3) having a smooth surface. ..
- Carbon is adhered to the surface of the insulating substrate (A), and the surface of the copper foil to which carbon is adhered is removed by an etching treatment using the sulfuric acid / hydrogen peroxide aqueous solution prepared in Preparation Example 2.
- a base material having a copper foil and a through hole connecting both sides of the insulating base material and having a through hole surface whose conductivity was ensured by carbon was obtained.
- Example 29 After that, in the same manner as in Example 29, except that a pattern resist is formed on the surface of the copper foil instead of the surface of the silver particle layer (M1), a microstrip having a thickness of 18 ⁇ m made of copper is placed on the plating base layer of the copper foil. A conductor circuit layer of a line and a probe terminal pad pattern was formed.
- the conductive layer (M3) of the microstrip line was etched and the film thickness was about 3 ⁇ m. As it became thinner, the wiring width decreased by about 6 ⁇ m, and the cross-sectional shape became "trapezoidal" because it could not hold a rectangle. Further, the surface of the conductive layer of copper was roughened by etching to reduce the smoothness.
- the electrolytic copper-plated polyimide film (“Capton 100EN-C” manufactured by Toray DuPont Co., Ltd .; thickness 25 ⁇ m) was used.
- a conductor circuit layer having a thickness of 18 ⁇ m and a probe terminal pad pattern was formed.
- the conductive layer (M3) of the microstrip line was etched and the film thickness was about 1 ⁇ m. As it became thinner, the wiring width decreased by 2 ⁇ m or more, and the cross-sectional shape became "trapezoidal" because it could not hold a rectangle. Further, the surface of the conductive layer of copper was roughened by etching to reduce the smoothness. Further, in the region other than the conductive layer (M3) pattern, only the copper layer was removed, and the nickel / chromium layer remained without being removed.
- Step 1 Insulating base material 2: Silver particle layer 3: Copper layer 4: Primer layer 5: Palladium, conductive polymer, carbon 6: Through hole 7: Palladium, conductive polymer, carbon 8: Pattern resist 9: Conductive layer (electrolytic copper plating layer)
- Step 1 Forming through holes (through holes)
- Step 2 Applying catalyst for electrolytic silver plating
- Step 3 Exposure of conductive silver particle layer
- Step 4 Silver layer conductivity of through holes by electrolytic silver plating
- Step 5 Resist pattern formation
- Step 6 Conductive layer formation by electrolytic copper plating
- Step 7 Pattern resist peeling
- Step 7 Silver seed removal
Abstract
Description
1.基材の両面を電気的に接続するための平面状のセミアディティブ工法用積層体であって、
絶縁性基材(A)の両表面上に導電性の銀粒子層(M1)を有し、
さらに、基材両面を接続する貫通孔を有し、貫通孔の表面が、銀層により導電性が確保された基材であることを特徴とするセミアディティブ工法用積層体。 That is, the present invention
1. 1. A planar semi-additive method laminate for electrically connecting both sides of a base material.
It has a conductive silver particle layer (M1) on both surfaces of the insulating base material (A) and has.
Further, a laminate for a semi-additive method, which has through holes connecting both sides of the base material, and the surface of the through holes is a base material whose conductivity is ensured by a silver layer.
前記貫通孔を有する基材の表面上に、無電解銀めっき用の触媒を付与する工程2、
前記銅層(M2)をエッチングして、導電性の銀粒子層(M1)を露出させる工程3、
無電解銀めっきにより、貫通孔を銀層で導電化する工程4、
を有することを特徴とする1~8いずれか1記載のセミアディティブ工法用積層体の製造方法。 12. A silver particle layer (M1) and a copper layer (M2) are sequentially laminated on both surfaces of the insulating base material (A), and the layer thickness of the copper layer (M2) is 0.1 μm to 2 μm.
The method for producing a laminate for a semi-additive method according to any one of 1 to 8, wherein the laminate is characterized by having.
前記貫通孔を有する基材の表面上に、無電解銀めっき用の触媒を付与する工程2、
前記剥離性カバー層(RC)を剥離して、導電性の銀粒子層(M1)を露出させる工程3、
無電解銀めっきにより、貫通孔を銀層で導電化する工程4、
を有することを特徴とする1~8いずれか1記載のセミアディティブ工法用積層体の製造方法。 13.
The method for producing a laminate for a semi-additive method according to any one of 1 to 8, wherein the laminate is characterized by having.
前記貫通孔を有する基材の表面上に、無電解銀めっき用の触媒を付与する工程2、
前記銅層(M2)をエッチングして、導電性の銀粒子層(M1)を露出させる工程3、
無電解銀めっきにより、貫通孔を銀層で導電化する工程4、
前記導電性の銀粒子層(M1)上に、パターンレジストを形成する工程5、
電解銅めっきにより、基材両面を電気的に接続するとともに、導電層(M3)回路パターン形成を行う工程6、
パターンレジストを剥離し、非回路パターン形成部の前記銀粒子層(M1)をエッチング液により除去する工程7
を有することを特徴とする9または10記載のプリント配線板の製造方法。 15. A silver particle layer (M1) and a copper layer (M2) are sequentially laminated on both surfaces of the insulating base material (A), and the layer thickness of the copper layer (M2) is 0.1 μm to 2 μm.
Step 6, in which both sides of the substrate are electrically connected by electrolytic copper plating and a conductive layer (M3) circuit pattern is formed.
Step 7 of peeling off the pattern resist and removing the silver particle layer (M1) of the non-circuit pattern forming portion with an etching solution.
9 or 10, according to the method for manufacturing a printed wiring board.
前記貫通孔を有する基材の表面上に、無電解銀めっき用の触媒を付与する工程2、
前記剥離性カバー層(RC)を剥離して、導電性の銀粒子層(M1)を露出させる工程3、
無電解銀めっきにより、貫通孔を銀層で導電化する工程4、
前記導電性の銀粒子層(M1)上に、パターンレジストを形成する工程5、
電解銅めっきにより、基材両面を電気的に接続するとともに、導電層(M3)回路パターン形成を行う工程6、
パターンレジストを剥離し、非回路パターン形成部の前記銀粒子層(M1)をエッチング液により除去する工程7
を有することを特徴とする9または10記載のプリント配線板の製造方法。 16.
Step 6, in which both sides of the substrate are electrically connected by electrolytic copper plating and a conductive layer (M3) circuit pattern is formed.
Step 7 of peeling off the pattern resist and removing the silver particle layer (M1) of the non-circuit pattern forming portion with an etching solution.
9 or 10, according to the method for manufacturing a printed wiring board.
前記穴開け加工で形成する穴の孔径(直径)は、0.01~1mmの範囲が好ましく、0.02~0.5mmの範囲がより好ましく、0.03~0.1mmの範囲がさらに好ましい。 Further, in
The hole diameter (diameter) formed by the drilling process is preferably in the range of 0.01 to 1 mm, more preferably in the range of 0.02 to 0.5 mm, and even more preferably in the range of 0.03 to 0.1 mm. ..
温度計、窒素ガス導入管、攪拌器を備えた窒素置換された容器中で、ポリエステルポリオール(1,4-シクロヘキサンジメタノールとネオペンチルグリコールとアジピン酸とを反応させて得られたポリエステルポリオール)100質量部、2,2―ジメチロールプロピオン酸17.6質量部、1,4-シクロヘキサンジメタノール21.7質量部及びジシクロヘキシルメタン-4,4’-ジイソシアネート106.2質量部を、メチルエチルケトン178質量部の混合溶剤中で反応させることによって、末端にイソシアネート基を有するウレタンプレポリマー溶液を得た。 [Production Example 1: Production of Primer (B-1)]
Polyester polyol (polyolpolyol obtained by reacting 1,4-cyclohexanedimethanol, neopentylglycol, and adipic acid in a nitrogen-substituted container equipped with a thermometer, a nitrogen gas introduction tube, and a stirrer) 100 By mass, 17.6 parts by mass of 2,2-dimethylolpropionic acid, 21.7 parts by mass of 1,4-cyclohexanedimethanol, 106.2 parts by mass of dicyclohexylmethane-4,4'-diisocyanate, and 178 parts by mass of methylethylketone. By reacting in the mixed solvent of the above, a urethane prepolymer solution having an isocyanate group at the terminal was obtained.
還流冷却器、温度計、撹拌機を備えた反応フラスコに、37質量%ホルムアルデヒドと7質量%メタノールを含むホルマリン600質量部に、水200質量部及びメタノール350質量部を加えた。次いで、この水溶液に25質量%水酸化ナトリウム水溶液を加え、pH10に調整した後、メラミン310質量部を加え、液温を85℃まで上げ、メチロール化反応を1時間行った。 [Production Example 2: Production of Primer (B-2)]
To a reaction flask equipped with a reflux condenser, a thermometer and a stirrer, 200 parts by mass of water and 350 parts by mass of methanol were added to 600 parts by mass of formalin containing 37% by mass formaldehyde and 7% by mass methanol. Next, a 25% by mass sodium hydroxide aqueous solution was added to this aqueous solution to adjust the pH to 10, then 310 parts by mass of melamine was added, the liquid temperature was raised to 85 ° C., and a methylolation reaction was carried out for 1 hour.
温度計、窒素ガス導入管、攪拌器を備え、窒素置換された反応容器に、2,2-ジメチロールプロピオン酸9.2質量部、ポリメチレンポリフェニルポリイソシアネート(東ソー株式会社製「ミリオネートMR-200」)57.4質量部及びメチルエチルケトン233質量部を仕込み、70℃で6時間反応させ、イソシアネート化合物を得た。次いで、反応容器内にブロック化剤としてフェノール26.4質量部を供給し、70℃で6時間反応させた。その後、40℃まで冷却し、ブロックイソシアネートの溶液を得た。 [Production Example 3: Production of Primer (B-3)]
A reaction vessel equipped with a thermometer, a nitrogen gas introduction tube, and a stirrer and substituted with nitrogen, 2,2-dimethylol propionic acid 9.2 parts by mass, polymethylene polyphenyl polyisocyanate ("Millionate MR-" manufactured by Toso Co., Ltd. 200 ”) 57.4 parts by mass and 233 parts by mass of methyl ethyl ketone were charged and reacted at 70 ° C. for 6 hours to obtain an isocyanate compound. Next, 26.4 parts by mass of phenol was supplied as a blocking agent into the reaction vessel, and the reaction was carried out at 70 ° C. for 6 hours. Then, it cooled to 40 degreeC, and the solution of blocked isocyanate was obtained.
ノボラック樹脂(DIC株式会社製「PHENOLITE TD-2131」、水酸基当量104g/当量)35質量部、エポキシ樹脂(DIC株式会社製「EPICLON 850-S」;ビスフェノールA型エポキシ樹脂、エポキシ基当量188g/当量)64質量部、及び、2,4-ジアミノ-6-ビニル-s-トリアジン(四国化成株式会社製「VT」)1質量部を混合後、メチルエチルケトンで不揮発分が2質量%となるように希釈混合することで、プライマー(B-4)を得た。 [Production Example 4: Production of Primer (B-4)]
Novolak resin ("PHENOLITE TD-2131" manufactured by DIC Co., Ltd., hydroxyl group equivalent 104 g / equivalent) 35 parts by mass, epoxy resin ("EPICLON 850-S" manufactured by DIC Co., Ltd .; bisphenol A type epoxy resin, epoxy group equivalent 188 g / equivalent) ) 64 parts by mass and 1 part by mass of 2,4-diamino-6-vinyl-s-triazine (“VT” manufactured by Shikoku Kasei Co., Ltd.), and then diluted with methyl ethyl ketone so that the non-volatile content is 2% by mass. By mixing, a primer (B-4) was obtained.
ノボラック樹脂(DIC株式会社製「PHENOLITE TD-2131」、水酸基当量104g/当量)35質量部、エポキシ樹脂(DIC株式会社製「EPICLON 850-S」;ビスフェノールA型エポキシ樹脂、エポキシ基当量188g/当量)64質量部、及び、トリアジン環を有するシランカップリング剤(四国化成株式会社製「VD-5」)1質量部を混合後、メチルエチルケトンで不揮発分が2質量%となるように希釈混合することで、プライマー(B-5)を得た。 [Production Example 5: Production of Primer (B-5)]
Novolak resin ("PHENOLITE TD-2131" manufactured by DIC Corporation, hydroxyl group equivalent 104 g / equivalent) 35 parts by mass, epoxy resin ("EPICLON 850-S" manufactured by DIC Corporation; bisphenol A type epoxy resin, epoxy group equivalent 188 g / equivalent) ) 64 parts by mass and 1 part by mass of a silane coupling agent having a triazine ring (“VD-5” manufactured by Shikoku Kasei Co., Ltd.), and then dilute and mix with methyl ethyl ketone so that the non-volatile content is 2% by mass. Then, a primer (B-5) was obtained.
温度計、冷却管、分留管、攪拌器を取り付けたフラスコに、フェノール750質量部、メラミン75質量部、41.5質量%ホルマリン346質量部、及びトリエチルアミン1.5質量部を加え、発熱に注意しながら100℃まで昇温した。還流下100℃にて2時間反応させた後、常圧下にて水を除去しながら180℃まで2時間かけて昇温した。次いで、減圧下で未反応のフェノールを除去し、アミノトリアジン変性ノボラック樹脂を得た。水酸基当量は120g/当量であった。
上記で得られたアミノトリアジンノボラック樹脂65質量部、及びエポキシ樹脂(DIC株式会社製「EPICLON 850-S」;ビスフェノールA型エポキシ樹脂、エポキシ基当量188g/当量)35質量部を混合後、メチルエチルケトンで不揮発分が2質量%となるように希釈混合することで、プライマー組成物(B-6)を得た。 [Production Example 6: Production of Primer (B-6)]
Add 750 parts by mass of phenol, 75 parts by mass of melamine, 346 parts by mass of 41.5% by mass of formalin, and 1.5 parts by mass of triethylamine to a flask equipped with a thermometer, a cooling tube, a fractionation tube, and a stirrer to generate heat. The temperature was raised to 100 ° C. with caution. After reacting at 100 ° C. under reflux for 2 hours, the temperature was raised to 180 ° C. over 2 hours while removing water under normal pressure. Then, the unreacted phenol was removed under reduced pressure to obtain an aminotriazine-modified novolak resin. The hydroxyl group equivalent was 120 g / equivalent.
After mixing 65 parts by mass of the aminotriazine novolak resin obtained above and 35 parts by mass of an epoxy resin (“EPICLON 850-S” manufactured by DIC Co., Ltd .; bisphenol A type epoxy resin, epoxy group equivalent 188 g / equivalent), with methyl ethyl ketone. A primer composition (B-6) was obtained by diluting and mixing so that the non-volatile content was 2% by mass.
製造例6で得られたアミノトリアジンノボラック樹脂48質量部、及びエポキシ樹脂(DIC株式会社製「EPICLON 850-S」;ビスフェノールA型エポキシ樹脂、エポキシ基当量188g/当量)52質量部を混合後、メチルエチルケトンで不揮発分が2質量%となるように希釈混合することで、プライマー組成物(B-7)を得た。 [Production Example 7: Production of Primer (B-7)]
After mixing 48 parts by mass of the aminotriazine novolak resin obtained in Production Example 6 and 52 parts by mass of an epoxy resin (“EPICLON 850-S” manufactured by DIC Co., Ltd .; bisphenol A type epoxy resin, epoxy group equivalent 188 g / equivalent), A primer composition (B-7) was obtained by diluting and mixing with methyl ethyl ketone so that the non-volatile content was 2% by mass.
アミノトリアジンノボラック樹脂とエポキシ樹脂の量をそれぞれ、48質量部から39質量部、52質量部から61質量部に変更した以外は、製造例78と同様にして、不揮発分2質量%のプライマー組成物(B-8)を得た。 [Production Example 8: Production of Primer (B-8)]
A primer composition having a non-volatile content of 2% by mass in the same manner as in Production Example 78, except that the amounts of the aminotriazine novolak resin and the epoxy resin were changed from 48 parts by mass to 39 parts by mass and from 52 parts by mass to 61 parts by mass, respectively. (B-8) was obtained.
アミノトリアジンノボラック樹脂とエポキシ樹脂の量をそれぞれ、48質量部から31質量部、52質量部から69質量部に変更した以外は、製造例8と同様にして、不揮発分2質量%のプライマー組成物(B-9)を得た。 [Production Example 9: Production of Primer (B-9)]
A primer composition having a non-volatile content of 2% by mass in the same manner as in Production Example 8 except that the amounts of the aminotriazine novolak resin and the epoxy resin were changed from 48 parts by mass to 31 parts by mass and from 52 parts by mass to 69 parts by mass, respectively. (B-9) was obtained.
製造例7で得られたアミノトリアジンノボラック樹脂47質量部、及びエポキシ樹脂(DIC株式会社製「EPICLON 850-S」;ビスフェノールA型エポキシ樹脂、エポキシ基当量188g/当量)52質量部に、さらに無水トリメリット酸1質量部を混合後、メチルエチルケトンで不揮発分が2質量%となるように希釈混合することで、プライマー(B-10)を得た。 [Production Example 10: Production of Primer (B-10)]
47 parts by mass of the aminotriazine novolak resin obtained in Production Example 7 and 52 parts by mass of an epoxy resin (“EPICLON 850-S” manufactured by DIC Co., Ltd .; bisphenol A type epoxy resin, epoxy group equivalent 188 g / equivalent) are further anhydrous. A primer (B-10) was obtained by mixing 1 part by mass of trimellitic acid and then diluting and mixing with methyl ethyl ketone so that the non-volatile content was 2% by mass.
撹拌機、還流冷却管、窒素導入管、温度計、滴下漏斗を備えた反応容器に脱イオン水350質量部、界面活性剤(花王株式会社製「ラテムルE-118B」:有効成分25質量%)4質量部を入れ、窒素を吹き込みながら70℃まで昇温した。 [Production Example 11: Production of Primer (B-11)]
A reaction vessel equipped with a stirrer, a reflux cooling tube, a nitrogen introduction tube, a thermometer, and a dropping funnel contains 350 parts by mass of deionized water and a surfactant (“Latemuru E-118B” manufactured by Kao Co., Ltd .: 25% by mass of the active ingredient). 4 parts by mass was added, and the temperature was raised to 70 ° C. while blowing nitrogen.
エチレングリコール45質量部及びイオン交換水55質量部の混合溶媒に、分散剤としてポリエチレンイミンにポリオキシエチレンが付加した化合物を用いて平均粒径30nmの銀粒子を分散させることによって、銀粒子及び分散剤を含有する分散体を調製した。次いで、得られた分散体に、イオン交換水、エタノール及び界面活性剤を添加して、5質量%の銀粒子分散液を調製した。 [Preparation Example 1: Preparation of silver particle dispersion]
Silver particles and dispersion by dispersing silver particles having an average particle size of 30 nm in a mixed solvent of 45 parts by mass of ethylene glycol and 55 parts by mass of ion-exchanged water using a compound obtained by adding polyoxyethylene to polyethyleneimine as a dispersant. A dispersion containing the agent was prepared. Next, ion-exchanged water, ethanol and a surfactant were added to the obtained dispersion to prepare a 5% by mass silver particle dispersion.
イオン交換水に、硫酸37.5g/L、および過酸化水素13.5g・Lの割合で混合し、銅エッチング液を調製した。 [Preparation Example 2: Preparation of Copper Etching Liquid]
A copper etching solution was prepared by mixing 37.5 g / L of sulfuric acid and 13.5 g / L of hydrogen peroxide with ion-exchanged water.
イオン交換水に下記の組成の薬剤を混合し、無電解銀めっき浴を調製した。
硝酸銀 0.02mol/L
アミノエタンチオール 0.07mol/L
N-アセチル-L-システイン 0.03mol/L
ヨードチロシン 10mg/L
シクロヘキサノール 5ml/L [Preparation Example 3: Preparation of electroless silver plating bath]
An electroless silver plating bath was prepared by mixing a drug having the following composition with ion-exchanged water.
Silver nitrate 0.02 mol / L
Aminoethanethiol 0.07 mol / L
N-Acetyl-L-Cysteine 0.03 mol / L
Iodine tyrosine 10 mg / L
水47.4質量部に、酢酸2.6質量部を加え、さらに、35質量%過酸化水素水50質量部を加えて、銀用エッチング液(1)を調製した。この銀用エッチング液(1)の過酸化水素とカルボン酸とのモル比(過酸化水素/カルボン酸)は13.6であり、銀用エッチング液(1)中の過酸化水素及びカルボン酸の混合物の含有比率は22.4質量%であった。 [Preparation Example 4: Preparation of Etching Solution for Silver]
2.6 parts by mass of acetic acid was added to 47.4 parts by mass of water, and 50 parts by mass of 35% by mass hydrogen peroxide solution was further added to prepare an etching solution for silver (1). The molar ratio (hydrogen / carboxylic acid) of hydrogen hydrogen and carboxylic acid in this etching solution for silver (1) is 13.6, and the hydrogen peroxide and carboxylic acid in the etching solution for silver (1) The content ratio of the mixture was 22.4% by mass.
(実施例1)
絶縁性基材であるポリイミドフィルム(東レ・デュポン株式会社製「カプトン 100EN-C」;厚さ25μm)の表面に、調製例1で得られた銀粒子分散体を、卓上型小型コーター(RKプリントコートインストルメント社製「Kプリンティングプローファー」)を用いて、乾燥後の銀粒子層が0.5g/m2となるように塗工した。次いで、熱風乾燥機を用いて160℃で5分間乾燥した。さらに、フィルムを裏返して、上記と同様にして調製例1で得られた銀粒子分散体を銀粒子層が0.5g/m2となる様に塗工し、熱風乾燥機を用いて160℃で5分間乾燥することによって、ポリイミドフィルムの両表面に銀粒子層を形成した。このようにして得られたフィルム基材を250℃で5分間焼成し、テスターで銀粒子層の導通を確認した。 (Manufacturing of laminate for semi-additive method)
(Example 1)
The silver particle dispersion obtained in Preparation Example 1 is placed on the surface of a polyimide film (“Kapton 100EN-C” manufactured by Toray DuPont Co., Ltd .; thickness 25 μm), which is an insulating base material, on a desktop compact coater (RK print). Using a "K printing prober" manufactured by Coat Instrument Co., Ltd., the silver particle layer after drying was coated to be 0.5 g / m 2 . Then, it was dried at 160 ° C. for 5 minutes using a hot air dryer. Further, the film was turned over, and the silver particle dispersion obtained in Preparation Example 1 was coated in the same manner as above so that the silver particle layer was 0.5 g / m 2 , and the temperature was 160 ° C. using a hot air dryer. A silver particle layer was formed on both surfaces of the polyimide film by drying in. The film substrate thus obtained was fired at 250 ° C. for 5 minutes, and the continuity of the silver particle layer was confirmed with a tester.
無電解めっき用のプリディップ液(「OPC-SAL-M」、奥野製薬工業株式会社製)を260g/Lの割合になる様に水で希釈して25℃に保持した。この液に、スルーホールが形成された上記フィルムを、1分間浸漬した。 (Adding palladium catalyst to through holes)
A predip solution for electroless plating (“OPC-SAL-M”, manufactured by Okuno Pharmaceutical Industry Co., Ltd.) was diluted with water to a ratio of 260 g / L and maintained at 25 ° C. The film having through holes formed therein was immersed in this liquid for 1 minute.
この様にして得られたフィルム基材を、調製例3で作製した無電解銀めっき液に80℃で30分間浸漬して、スルーホール内壁に銀めっき膜を形成した。フィルム上の銀粒子層の表裏面をテスターで検査することにより、表裏面が電気的に接続され、スルーホール内壁の銀めっきによりフィルム表裏の導電性が確保されていることを確認した。このようにして、絶縁性基材(A)の両表面上に、導電性の銀粒子層(M1)を有し、さらに、絶縁性基材両面を接続する貫通孔を有し、貫通孔の表面が、銀層によって導電性が確保されたセミアディティブ工法用積層体を得た。 (Electroless silver plating)
The film substrate thus obtained was immersed in the electroless silver plating solution prepared in Preparation Example 3 at 80 ° C. for 30 minutes to form a silver plating film on the inner wall of the through hole. By inspecting the front and back surfaces of the silver particle layer on the film with a tester, it was confirmed that the front and back surfaces were electrically connected and that the silver plating on the inner wall of the through hole ensured the conductivity of the front and back surfaces of the film. In this way, the conductive silver particle layer (M1) is provided on both surfaces of the insulating base material (A), and further, through holes connecting both sides of the insulating base material are provided. A laminate for a semi-additive method whose surface was ensured by a silver layer was obtained.
無電解銅めっき液中への浸漬時間を10分から、25分に変更した以外は、実施例1と同様にして、絶縁性基材(A)の両表面上に、導電性の銀粒子層(M1)を有し、さらに、絶縁性基材両面を接続する貫通孔を有し、貫通孔の表面が、銀層によって導電性が確保されたセミアディティブ工法用積層体を得た。 (Example 2)
A conductive silver particle layer (conducting silver particle layer) on both surfaces of the insulating base material (A) in the same manner as in Example 1 except that the immersion time in the electroless copper plating solution was changed from 10 minutes to 25 minutes. A laminate for a semi-additive method having M1) and further having through holes connecting both sides of the insulating base material and having the surface of the through holes secured by a silver layer was obtained.
乾燥後の銀粒子層が0.5g/m2から、0.8g/m2となる様に変更した以外は、実施例1と同様にしてポリイミドフィルムの両表面に銀粒子層を形成し、250℃で5分間焼成して、テスターで銀粒子層の導通を確認した。このようにして得られた、両表面に導電性の銀粒子層を有するポリイミドフィルムを銅製の枠に固定し、銀粒子層の表面をカソードに設置し、含リン銅をアノードとして、硫酸銅を含有する電解めっき液(硫酸銅60g/L、硫酸190g/L、塩素イオン50mg/L、添加剤(ローム・アンド・ハース電子材料株式会社製 カパーグリームST-901」)を用いて、電流密度2A/dm2で4.5分間電解めっきを行うことによって、絶縁性基材(A)であるポリイミドフィルムの両表面上に、銀粒子層(M1)、及び、2μm厚の銅層(M2)が形成された積層体を作製した。 (Example 3)
The silver particle layers were formed on both surfaces of the polyimide film in the same manner as in Example 1 except that the silver particle layer after drying was changed from 0.5 g / m 2 to 0.8 g / m 2 . It was fired at 250 ° C. for 5 minutes, and the continuity of the silver particle layer was confirmed with a tester. A polyimide film having conductive silver particle layers on both surfaces thus obtained was fixed to a copper frame, the surface of the silver particle layer was placed on a cathode, and copper sulfate was used with phosphorus-containing copper as an anode. Using the contained electrolytic plating solution (copper sulfate 60 g / L, sulfuric acid 190 g / L, chlorine ion 50 mg / L, additive (Copper Grim ST-901 manufactured by Roam & Haas Electronic Materials Co., Ltd.)), the current density is 2A. By performing electrolytic plating at / dm2 for 4.5 minutes, a silver particle layer (M1) and a copper layer (M2) having a thickness of 2 μm are formed on both surfaces of the polyimide film which is the insulating base material (A). The laminated body was prepared.
ポリイミドフィルム(東レ・デュポン株式会社製「カプトン 100EN-C」、厚さ25μm)の表面に、製造例1で得られたプライマー(B-1)を、卓上型小型コーター(RKプリントコートインストルメント社製「Kプリンティングプローファー」)を用いて、乾燥後の厚さが120nmとなるように塗工し、次いで、熱風乾燥機を用いて80℃で5分間乾燥した、さらに、フィルムを裏返して、上記と同様にして製造例1で得られたプライマー(B-1)を乾燥後の厚さが120nmとなるように塗工し、熱風乾燥機を用いて80℃で5分間乾燥することによって、ポリイミドフィルムの両表面にプライマー層を形成した。 (Example 4)
On the surface of a polyimide film (“Capton 100EN-C” manufactured by Toray DuPont Co., Ltd., thickness 25 μm), the primer (B-1) obtained in Production Example 1 was applied to a desktop compact coater (RK Print Coat Instrument Co., Ltd.). The film was coated to a thickness of 120 nm after drying using a “K printing prober”), and then dried at 80 ° C. for 5 minutes using a hot air dryer. Further, the film was turned inside out. In the same manner as above, the primer (B-1) obtained in Production Example 1 was coated so that the thickness after drying was 120 nm, and dried at 80 ° C. for 5 minutes using a hot air dryer. Primer layers were formed on both surfaces of the polyimide film.
実施例4において、銀粒子層を0.5g/m2から、0.8g/m2となる様に変更し、実施例3と同様に電解銅めっき処理を行うことによって、絶縁性基材(A)であるポリイミドフィルムの両表面上に、プライマー層(B)、導電性の銀粒子層(M1)、及び、2μm厚の銅層(M2)が形成されたセミアディティブ工法用積層体を作製した。以降は実施例4と同様にして、絶縁性基材(A)の両表面上に、プライマー層(B)、導電性の銀粒子層(M1)を有し、さらに、絶縁性基材両面を接続する貫通孔を有し、貫通孔の表面が、銀層によって導電性が確保されたセミアディティブ工法用積層体を得た。 (Example 5)
In Example 4, the silver particle layer was changed from 0.5 g / m 2 to 0.8 g / m 2 , and the electrolytic copper plating treatment was performed in the same manner as in Example 3, whereby the insulating base material ( A semi-additive method laminate in which a primer layer (B), a conductive silver particle layer (M1), and a 2 μm-thick copper layer (M2) are formed on both surfaces of the polyimide film of A) is produced. bottom. After that, in the same manner as in Example 4, the primer layer (B) and the conductive silver particle layer (M1) are provided on both surfaces of the insulating base material (A), and both sides of the insulating base material are further formed. A laminate for a semi-additive method having a through hole to be connected and having a through hole surface whose conductivity was ensured by a silver layer was obtained.
実施例1~4において、銀粒子層(M1)の上に銅層(M2)を形成する代わりに、剥離性カバー層(RC)として、38μm厚のポリエステル製再剥離性粘着テープ(パナック株式会社製、パナプロテクトHP/CT)をラミネートした以外は、それぞれ実施例1から4と同様にして、絶縁性基材(A)の両表面上に、導電性の銀粒子層(M1)を有し、さらに、絶縁性基材両面を接続する貫通孔を有し、貫通孔の表面が、銀層によって導電性が確保されたセミアディティブ工法用積層体を得た。 (Examples 6 to 9)
In Examples 1 to 4, instead of forming a copper layer (M2) on the silver particle layer (M1), a 38 μm-thick polyester releasable adhesive tape (Panac Co., Ltd.) is used as a peelable cover layer (RC). A conductive silver particle layer (M1) is provided on both surfaces of the insulating base material (A) in the same manner as in Examples 1 to 4, except that Panaprotect HP / CT) is laminated. Further, a laminate for a semi-additive method having a through hole connecting both sides of the insulating base material and having a through hole surface whose conductivity is ensured by a silver layer was obtained.
実施例5において、銀粒子層(M1)の上に銅層(M2)を形成する代わりに、剥離性カバー層(RC)として、38μm厚のポリエステル製再剥離性粘着テープ(パナック株式会社製、パナプロテクトHP/CT)をラミネートした以外は、実施例5と同様にして、絶縁性基材(A)の両表面上に、プライマー層(B)、導電性の銀粒子層(M1)を有し、さらに、絶縁性基材両面を接続する貫通孔を有し、貫通孔の表面が、銀層によって導電性が確保されたセミアディティブ工法用積層体を得た。 (Example 10)
In Example 5, instead of forming a copper layer (M2) on the silver particle layer (M1), as a peelable cover layer (RC), a 38 μm thick polyester releasable adhesive tape (manufactured by Panac Co., Ltd.) A primer layer (B) and a conductive silver particle layer (M1) are provided on both surfaces of the insulating base material (A) in the same manner as in Example 5 except that Panaprotect HP / CT) is laminated. Further, a laminate for a semi-additive method having a through hole connecting both sides of the insulating base material and having a through hole surface whose conductivity was ensured by a silver layer was obtained.
ドリルを用いた100μm径のスルーホールから、レーザーを用いた70μm径のスルーホール形成に変更した以外は、実施例5と同様にして、絶縁性基材(A)の両表面上に、導電性の銀粒子層(M1)を有し、さらに、絶縁性基材両面を接続する貫通孔を有し、貫通孔の表面が、銀層によって導電性が確保されたセミアディティブ工法用積層体を得た。 (Example 11)
Conductive on both surfaces of the insulating substrate (A) in the same manner as in Example 5, except that the 100 μm diameter through hole using a drill was changed to the 70 μm diameter through hole formation using a laser. To obtain a laminate for a semi-additive method, which has a silver particle layer (M1) of the above, further has through holes for connecting both sides of an insulating base material, and the surface of the through holes is ensured by a silver layer for conductivity. rice field.
ドリルを用いた100μm径のスルーホールから、レーザーを用いた70μm径のスルーホール形成に変更した以外は、実施例1と同様にして、絶縁性基材(A)の両表面上に、導電性の銀粒子層(M1)を有し、さらに、絶縁性基材両面を接続する貫通孔を有し、貫通孔の表面が、銀層によって導電性が確保されたセミアディティブ工法用積層体を得た。 (Example 12)
Conductive on both surfaces of the insulating substrate (A) in the same manner as in Example 1 except that the through hole having a diameter of 100 μm using a drill was changed to the through hole having a diameter of 70 μm using a laser. To obtain a laminate for a semi-additive method, which has a silver particle layer (M1) of the above, further has through holes for connecting both sides of an insulating base material, and the surface of the through holes is ensured by a silver layer for conductivity. rice field.
絶縁性基材種、プライマー層に用いるプライマーの種類及びその乾燥条件、銀粒子層の銀量、銀粒子層のカバー層種、スルーホール形成法を表1又は2に示したものに変更した以外は、実施例1~12と同様にして、セミアディティブ工法用積層体を得た。 (Examples 13 to 28)
Other than changing the insulating substrate type, the type of primer used for the primer layer and its drying conditions, the amount of silver in the silver particle layer, the cover layer type of the silver particle layer, and the through-hole formation method to those shown in Table 1 or 2. Obtained a laminated body for a semi-additive method in the same manner as in Examples 1 to 12.
(実施例29~34)
実施例1~3、6~8において、スルーホールの形成位置を、配線長100mm、インピーダンス50Ωのマイクロストリップラインの伝送特性評価端子における裏面ベタGNDへの接続位置に設計した以外は、実施例実施例1~3、6~8と同様にして、絶縁性基材(A)の両表面上に、導電性の銀粒子層(M1)を有し、さらに、絶縁性基材両面を接続する貫通孔を有し、貫通孔の表面が、銀層によって導電性が確保されたセミアディティブ工法用積層体を得た。 (Manufacturing of printed wiring boards)
(Examples 29 to 34)
In Examples 1 to 3 and 6 to 8, the through hole formation position is designed to be the connection position to the back surface solid GND at the transmission characteristic evaluation terminal of the microstrip line having a wiring length of 100 mm and an impedance of 50 Ω. Similar to Examples 1 to 3 and 6 to 8, a conductive silver particle layer (M1) is provided on both surfaces of the insulating base material (A), and a penetration that connects both sides of the insulating base material. A laminate for a semi-additive method having holes and having a through-hole surface whose conductivity was ensured by a silver layer was obtained.
実施例4、5、9~28において、スルーホールの形成位置を、配線長100mm、インピーダンス50Ωのマイクロストリップラインの伝送特性評価端子における裏面ベタGNDへの接続位置に設計した以外は、実施例4、5、9~28と同様にして、絶縁性基材(A)の両表面上に、プライマー層(B)、導電性の銀粒子層(M1)をこの順に有し、さらに、絶縁性基材両面を接続する貫通孔を有し、貫通孔の表面が、銀層によって導電性が確保されたセミアディティブ工法用積層体を得た。 (Examples 35 to 56)
In Examples 4, 5, 9 to 28, the through hole formation position is designed to be the connection position to the back surface solid GND at the transmission characteristic evaluation terminal of the microstrip line having a wiring length of 100 mm and an impedance of 50 Ω. Similar to 5, 9 to 28, the primer layer (B) and the conductive silver particle layer (M1) are provided in this order on both surfaces of the insulating base material (A), and further, an insulating group is provided. A laminate for a semi-additive construction method was obtained, which had through holes connecting both sides of the material and whose surface of the through holes was ensured by a silver layer.
両面に銀粒子層を形成したポリイミドフィルムを用いる代わりに、両面にめっき下地層として3μm厚の粗化銅箔を有する市販の25μm厚ポリイミドベースFCCL(宇部エクシモ株式会社製「ユピセルN-BE1310YSB」)を用いた以外は、実施例29と同様にして、両面を貫通するスルーホールを形成し、常法に基づき、マクダーミッド社のブラックホールプロセス(コンディショニング-カーボン吸着処理-エッチング)に通して、スルーホールの表面にカーボンを付着させ、カーボンの付着した銅箔表面を、調製例2で作製した硫酸/過酸化水素水溶液を用いたエッチング処理で除去することにより、絶縁性基材(A)の両表面上に、銅箔を有し、さらに、絶縁性基材両面を接続する貫通孔を有し、貫通孔の表面が、カーボンによって導電性が確保された基材を得た。 (Comparative Example 1)
Instead of using a polyimide film having silver particle layers formed on both sides, a commercially available 25 μm-thick polyimide-based FCCL (“Yupicel N-BE1310YSB” manufactured by Ube Eximo Co., Ltd.) having a roughened copper foil with a thickness of 3 μm as a plating base layer on both sides. In the same manner as in Example 29, a through hole penetrating both sides is formed, and the through hole is passed through a black hole process (conditioning-carbon adsorption treatment-etching) of McDermid Co., Ltd. based on a conventional method. Carbon is adhered to the surface of the insulating substrate (A), and the surface of the copper foil to which carbon is adhered is removed by an etching treatment using the sulfuric acid / hydrogen peroxide aqueous solution prepared in Preparation Example 2. A base material having a copper foil and a through hole connecting both sides of the insulating base material and having a through hole surface whose conductivity was ensured by carbon was obtained.
両面に銀粒子層を形成したポリイミドフィルムを用いる代わりに、両面にめっき下地層としてニッケル/クロム(厚さ30nm、ニッケル/クロム質量比=80/20)、さらに70nmの銅をスパッタし、1μm厚の電解銅めっき処理したポリイミドフィルム(東レ・デュポン株式会社製「カプトン 100EN-C」;厚さ25μm)を用いた以外は、比較例1と同様にして、銅箔のめっき下地層上に、銅による18μm厚のマイクロストリップライン、及びプローブ端子部パッドパターンの導体回路層を形成した。 (Comparative Example 2)
Instead of using a polyimide film having a silver particle layer formed on both sides, nickel / chromium (thickness 30 nm, nickel / chromium mass ratio = 80/20) and 70 nm copper are sputtered as a plating base layer on both sides to a thickness of 1 μm. Copper was copper-plated on the copper foil plating base layer in the same manner as in Comparative Example 1 except that the electrolytic copper-plated polyimide film (“Capton 100EN-C” manufactured by Toray DuPont Co., Ltd .; thickness 25 μm) was used. A conductor circuit layer having a thickness of 18 μm and a probe terminal pad pattern was formed.
上記で得られたプリント配線板の櫛歯電極部の断面を走査型電子顕微鏡(日本電子株式会社製「JSM7800」)で500~10,000倍に拡大し観察して、アンダーカットの有無及び櫛歯電極部の断面形状を確認した。 [Check for undercut and cross-sectional shape of wiring]
The cross section of the comb tooth electrode portion of the printed wiring plate obtained above was magnified 500 to 10,000 times with a scanning electron microscope (“JSM7800” manufactured by Nippon Denshi Co., Ltd.) and observed to determine the presence or absence of undercut and the comb. The cross-sectional shape of the tooth electrode was confirmed.
By observing the wiring surface of the produced printed wiring board with a laser microscope (manufactured by KEYENCE, VK-9710), the surface roughness of the wiring surface is confirmed, and those having an Rz of 3 μm or less are smooth (smoothness). : 〇), and those having an Rz of more than 3 μm were evaluated as not smooth (smoothness: ×). Further, when the difference between the design width of the wiring by the resist used for wiring formation and the upper surface width of the formed wiring is 2 μm or less, the side etch is suppressed and the rectangular shape can be maintained (rectangularity: 〇). Those having a difference of more than 2 μm were evaluated as being unable to retain the short shape (short formation: ×), and are shown in Tables 1 and 2.
2:銀粒子層
3:銅層
4:プライマー層
5:パラジウム、導電性ポリマー、カーボン
6:貫通孔(スルーホール)
7:パラジウム、導電性ポリマー、カーボン
8:パターンレジスト
9:導電層(電解銅めっき層)
(a)セミアディティブ工法用積層体
(b)工程1:貫通孔(スルーホール)形成
(c)工程2:無電解銀めっき用触媒付与
(d)工程3:導電性銀粒子層の露出
(e)工程4:無電解銀めっきによるスルーホールの銀層導電化
(f)工程5:レジストパターン形成
(g)工程6:電解銅めっきによる導電層形成
(h)工程7:パターンレジスト剥離
(i)工程7:銀シード除去 1: Insulating base material 2: Silver particle layer 3: Copper layer 4: Primer layer 5: Palladium, conductive polymer, carbon 6: Through hole
7: Palladium, conductive polymer, carbon 8: Pattern resist 9: Conductive layer (electrolytic copper plating layer)
(A) Laminated body for semi-additive method (b) Step 1: Forming through holes (through holes) (c) Step 2: Applying catalyst for electrolytic silver plating (d) Step 3: Exposure of conductive silver particle layer (e) ) Step 4: Silver layer conductivity of through holes by electrolytic silver plating (f) Step 5: Resist pattern formation (g) Step 6: Conductive layer formation by electrolytic copper plating (h) Step 7: Pattern resist peeling (i) Step 7: Silver seed removal
Claims (17)
- 基材の両面を電気的に接続するための平面状のセミアディティブ工法用積層体であって、
絶縁性基材(A)の両表面上に導電性の銀粒子層(M1)を有し、
さらに、基材両面を接続する貫通孔を有し、貫通孔の表面が、銀層により導電性が確保された基材であることを特徴とするセミアディティブ工法用積層体。 A planar semi-additive method laminate for electrically connecting both sides of a base material.
It has a conductive silver particle layer (M1) on both surfaces of the insulating base material (A) and has.
Further, a laminate for a semi-additive method, which has through holes connecting both sides of the base material, and the surface of the through holes is a base material whose conductivity is ensured by a silver layer. - 前記絶縁性基材層(A)と、導電性の銀粒子層(M1)の間に、さらにプライマー層(B)を有することを特徴とする請求項1記載のセミアディティブ工法用積層体。 The laminate for a semi-additive method according to claim 1, wherein a primer layer (B) is further provided between the insulating base material layer (A) and the conductive silver particle layer (M1).
- 前記、貫通孔の表面で導電性を確保する銀層が無電解銀めっき層であることを特徴とする請求項1または請求項2記載のセミアディティブ工法用積層体。 The laminate for the semi-additive method according to claim 1 or 2, wherein the silver layer for ensuring conductivity on the surface of the through hole is an electroless silver plating layer.
- 前記銀粒子層(M1)を構成する銀粒子が、高分子分散剤で被覆されたものである請求項1~3のいずれか1項記載のセミアディティブ工法用積層体。 The laminate for the semi-additive method according to any one of claims 1 to 3, wherein the silver particles constituting the silver particle layer (M1) are coated with a polymer dispersant.
- 請求項3記載のプリント配線板用積層体において、前記プライマー層(B)が反応性官能基[X]を有する樹脂で構成される層であり、前記高分子分散剤が反応性官能基[Y]を有するものであり、前記反応性官能基[X]と前記反応性官能基[Y]とは反応により互いに結合を形成できるものである請求項4記載のプリント配線板用積層体。 In the laminated body for a printed wiring board according to claim 3, the primer layer (B) is a layer composed of a resin having a reactive functional group [X], and the polymer dispersant is a reactive functional group [Y]. ], And the laminated body for a printed wiring board according to claim 4, wherein the reactive functional group [X] and the reactive functional group [Y] can form a bond with each other by a reaction.
- 前記反応性官能基[Y]が、塩基性窒素原子含有基である請求項5記載のプリント配線板用積層体。 The laminated body for a printed wiring board according to claim 5, wherein the reactive functional group [Y] is a basic nitrogen atom-containing group.
- 前記反応性官能基[Y]を有する高分子分散剤が、ポリアルキレンイミン、及びオキシエチレン単位を含むポリオキシアルキレン構造を有するポリアルキレンイミンからなる群から選ばれる1種以上である請求項6記載のプリント配線板用積層体。 The sixth aspect of claim 6, wherein the polymer dispersant having the reactive functional group [Y] is one or more selected from the group consisting of polyalkyleneimine and polyalkyleneimine having a polyoxyalkylene structure containing an oxyethylene unit. Laminated material for printed wiring boards.
- 前記反応性官能基[X]が、ケト基、アセトアセチル基、エポキシ基、カルボキシル基、N-アルキロール基、イソシアネート基、ビニル基、(メタ)アクリロイル基、アリル基からなる群から選ばれる1種以上である請求項5~7のいずれか1項記載のプリント配線板用積層体。 The reactive functional group [X] is selected from the group consisting of a keto group, an acetoacetyl group, an epoxy group, a carboxyl group, an N-alkyrole group, an isocyanate group, a vinyl group, a (meth) acryloyl group and an allyl group1 The laminated body for a printed wiring board according to any one of claims 5 to 7, which is more than one kind.
- 請求項1~8のいずれか1項記載のセミアディティブ工法用積層体を用いて形成されたことを特徴とするプリント配線板。 A printed wiring board characterized by being formed by using the laminate for the semi-additive method according to any one of claims 1 to 8.
- 請求項1~8いずれか1項記載のプリント配線板用積層体の銀粒子層(M1)、及び、基材両面を接続する貫通孔表面の銀層に、さらに銅からなる導電層(M3)が積層されたことを特徴とするプリント配線板。 The silver particle layer (M1) of the laminated body for a printed wiring board according to any one of claims 1 to 8, the silver layer on the surface of the through hole connecting both sides of the base material, and the conductive layer (M3) further made of copper. A printed wiring board characterized by being laminated.
- 前記絶縁性基材(A)と、銀粒子層(M1)の間に、さらにプライマー層(B)を有することを特徴とする請求項10記載のプリント配線板。 The printed wiring board according to claim 10, further comprising a primer layer (B) between the insulating base material (A) and the silver particle layer (M1).
- 絶縁性基材(A)の両表面上に、銀粒子層(M1)、及び銅層(M2)が、順次積層され、前記銅層(M2)の層厚が、0.1μm~2μmである積層体に、両面を貫通する貫通孔を形成する工程1、
前記貫通孔を有する基材の表面上に、無電解銀めっき用の触媒を付与する工程2、
前記銅層(M2)をエッチングして、導電性の銀粒子層(M1)を露出させる工程3、
無電解銀めっきにより、貫通孔を銀層で導電化する工程4、
を有することを特徴とする請求項1~8いずれか1項記載のセミアディティブ工法用積層体の製造方法。 A silver particle layer (M1) and a copper layer (M2) are sequentially laminated on both surfaces of the insulating base material (A), and the layer thickness of the copper layer (M2) is 0.1 μm to 2 μm. Step 1, in which through holes penetrating both sides are formed in the laminated body.
Step 2 of applying a catalyst for electroless silver plating on the surface of the base material having through holes.
Step 3 of etching the copper layer (M2) to expose the conductive silver particle layer (M1).
Step 4, which makes the through holes conductive with a silver layer by electroless silver plating,
The method for producing a laminate for a semi-additive method according to any one of claims 1 to 8, wherein the laminate is characterized by having. - 絶縁性基材(A)の両表面上に、銀粒子層(M1)、及び、剥離性カバー層(RC)が、順次積層された積層体に、両面を貫通する貫通孔を形成する工程1、
前記貫通孔を有する基材の表面上に、無電解銀めっき用の触媒を付与する工程2、
前記剥離性カバー層(RC)を剥離して、導電性の銀粒子層(M1)を露出させる工程3、
無電解銀めっきにより、貫通孔を銀層で導電化する工程4、
を有することを特徴とする請求項1~8いずれか1項記載のセミアディティブ工法用積層体の製造方法。 Step 1 of forming through holes penetrating both sides in a laminated body in which a silver particle layer (M1) and a peelable cover layer (RC) are sequentially laminated on both surfaces of an insulating base material (A). ,
Step 2 of applying a catalyst for electroless silver plating on the surface of the base material having through holes.
Step 3, the step 3 of peeling off the peelable cover layer (RC) to expose the conductive silver particle layer (M1).
Step 4, which makes the through holes conductive with a silver layer by electroless silver plating,
The method for producing a laminate for a semi-additive method according to any one of claims 1 to 8, wherein the laminate is characterized by having. - 前記絶縁性基材(A)と、銀粒子層(M1)の間に、さらにプライマー層(B)を積層させることを特徴とする請求項12または13記載のセミアディティブ工法用積層体の製造方法。 The method for producing a laminate for a semi-additive method according to claim 12 or 13, wherein a primer layer (B) is further laminated between the insulating base material (A) and the silver particle layer (M1). ..
- 絶縁性基材(A)の両表面上に、銀粒子層(M1)、及び銅層(M2)が、順次積層され、前記銅層(M2)の層厚が、0.1μm~2μmである積層体に、両面を貫通する貫通孔を形成する工程1、
前記貫通孔を有する基材の表面上に、無電解銀めっき用の触媒を付与する工程2、
前記銅層(M2)をエッチングして、導電性の銀粒子層(M1)を露出させる工程3、
無電解銀めっきにより、貫通孔を銀層で導電化する工程4、
前記導電性の銀粒子層(M1)上に、パターンレジストを形成する工程5、
電解銅めっきにより、基材両面を電気的に接続するとともに、導電層(M3)回路パターン形成を行う工程6、
パターンレジストを剥離し、非回路パターン形成部の前記銀粒子層(M1)をエッチング液により除去する工程7
を有することを特徴とする請求項9または請求項10記載のプリント配線板の製造方法。 A silver particle layer (M1) and a copper layer (M2) are sequentially laminated on both surfaces of the insulating base material (A), and the layer thickness of the copper layer (M2) is 0.1 μm to 2 μm. Step 1, in which through holes penetrating both sides are formed in the laminated body.
Step 2 of applying a catalyst for electroless silver plating on the surface of the base material having through holes.
Step 3 of etching the copper layer (M2) to expose the conductive silver particle layer (M1).
Step 4, which makes the through holes conductive with a silver layer by electroless silver plating,
Step 5 of forming a pattern resist on the conductive silver particle layer (M1).
Step 6, in which both sides of the substrate are electrically connected by electrolytic copper plating and a conductive layer (M3) circuit pattern is formed.
Step 7 of peeling off the pattern resist and removing the silver particle layer (M1) of the non-circuit pattern forming portion with an etching solution.
The method for manufacturing a printed wiring board according to claim 9 or 10, wherein the printed wiring board is characterized by the above. - 絶縁性基材(A)の両表面上に、銀粒子層(M1)、及び、剥離性カバー層(RC)が、順次積層された積層体に、両面を貫通する貫通孔を形成する工程1、
前記貫通孔を有する基材の表面上に、無電解銀めっき用の触媒を付与する工程2、
前記剥離性カバー層(RC)を剥離して、導電性の銀粒子層(M1)を露出させる工程3、
無電解銀めっきにより、貫通孔を銀層で導電化する工程4、
前記導電性の銀粒子層(M1)上に、パターンレジストを形成する工程5、
電解銅めっきにより、基材両面を電気的に接続するとともに、導電層(M3)回路パターン形成を行う工程6、
パターンレジストを剥離し、非回路パターン形成部の前記銀粒子層(M1)をエッチング液により除去する工程7
を有することを特徴とする請求項9または10記載のプリント配線板の製造方法。 Step 1 of forming through holes penetrating both sides in a laminated body in which a silver particle layer (M1) and a peelable cover layer (RC) are sequentially laminated on both surfaces of an insulating base material (A). ,
Step 2 of applying a catalyst for electroless silver plating on the surface of the base material having through holes.
Step 3, the step 3 of peeling off the peelable cover layer (RC) to expose the conductive silver particle layer (M1).
Step 4, which makes the through holes conductive with a silver layer by electroless silver plating,
Step 5 of forming a pattern resist on the conductive silver particle layer (M1).
Step 6, in which both sides of the substrate are electrically connected by electrolytic copper plating and a conductive layer (M3) circuit pattern is formed.
Step 7 of peeling off the pattern resist and removing the silver particle layer (M1) of the non-circuit pattern forming portion with an etching solution.
9. The method for manufacturing a printed wiring board according to claim 9 or 10. - 絶縁性基材(A)と、銀粒子層(M1)の間に、さらにプライマー層(B)を積層させることを特徴とする請求項15または16記載のプリント配線板の製造方法。 The method for manufacturing a printed wiring board according to claim 15 or 16, wherein a primer layer (B) is further laminated between the insulating base material (A) and the silver particle layer (M1).
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202180074841.5A CN116508400A (en) | 2020-11-05 | 2021-10-21 | Laminate for semi-additive method and printed wiring board using same |
JP2022527759A JP7288230B2 (en) | 2020-11-05 | 2021-10-21 | Laminate for semi-additive construction method and printed wiring board using the same |
KR1020237015234A KR20230098195A (en) | 2020-11-05 | 2021-10-21 | Laminate for semi-additive method and printed wiring board using the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020184973 | 2020-11-05 | ||
JP2020-184973 | 2020-11-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2022097480A1 true WO2022097480A1 (en) | 2022-05-12 |
Family
ID=81457247
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2021/038868 WO2022097480A1 (en) | 2020-11-05 | 2021-10-21 | Laminate for semi-additive manufacturing and printed wiring board using same |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP7288230B2 (en) |
KR (1) | KR20230098195A (en) |
CN (1) | CN116508400A (en) |
TW (1) | TW202236926A (en) |
WO (1) | WO2022097480A1 (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003332735A (en) * | 2002-05-14 | 2003-11-21 | Fujitsu Ltd | Wiring board, its manufacturing method, and conductor- laminated board |
JP2009239238A (en) * | 2008-03-28 | 2009-10-15 | Fujifilm Corp | Method of manufacturing electronic circuit board |
JP2013222908A (en) * | 2012-04-19 | 2013-10-28 | Achilles Corp | Manufacturing method of double sided circuit board and double sided circuit board |
WO2020003879A1 (en) * | 2018-06-26 | 2020-01-02 | Dic株式会社 | Method for producing molded body having metal pattern |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3570802B2 (en) | 1995-11-14 | 2004-09-29 | 三井化学株式会社 | Copper thin film substrate and printed wiring board |
US10021789B2 (en) | 2007-07-02 | 2018-07-10 | Ebara-Udylite Co., Ltd. | Metal-laminated polyimide substrate, and method for production thereof |
JP2010272837A (en) | 2009-04-24 | 2010-12-02 | Sumitomo Electric Ind Ltd | Substrate for printed wiring board, printed wiring board, and method for producing substrate for printed wiring board |
-
2021
- 2021-10-21 KR KR1020237015234A patent/KR20230098195A/en unknown
- 2021-10-21 WO PCT/JP2021/038868 patent/WO2022097480A1/en active Application Filing
- 2021-10-21 CN CN202180074841.5A patent/CN116508400A/en active Pending
- 2021-10-21 JP JP2022527759A patent/JP7288230B2/en active Active
- 2021-11-03 TW TW110140951A patent/TW202236926A/en unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003332735A (en) * | 2002-05-14 | 2003-11-21 | Fujitsu Ltd | Wiring board, its manufacturing method, and conductor- laminated board |
JP2009239238A (en) * | 2008-03-28 | 2009-10-15 | Fujifilm Corp | Method of manufacturing electronic circuit board |
JP2013222908A (en) * | 2012-04-19 | 2013-10-28 | Achilles Corp | Manufacturing method of double sided circuit board and double sided circuit board |
WO2020003879A1 (en) * | 2018-06-26 | 2020-01-02 | Dic株式会社 | Method for producing molded body having metal pattern |
Also Published As
Publication number | Publication date |
---|---|
JP7288230B2 (en) | 2023-06-07 |
CN116508400A (en) | 2023-07-28 |
KR20230098195A (en) | 2023-07-03 |
TW202236926A (en) | 2022-09-16 |
JPWO2022097480A1 (en) | 2022-05-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6766983B2 (en) | Manufacturing method of printed wiring board | |
JP6750766B2 (en) | Method for manufacturing printed wiring board | |
JP6667119B1 (en) | Laminated body for printed wiring board and printed wiring board using the same | |
WO2022097480A1 (en) | Laminate for semi-additive manufacturing and printed wiring board using same | |
WO2022097483A1 (en) | Multilayer body for semi-additive process and printed wiring board using same | |
WO2022097484A1 (en) | Laminate for semi-additive manufacturing and printed wiring board using same | |
WO2022097482A1 (en) | Laminate for semi-additive manufacturing and printed wiring board using same | |
WO2022097479A1 (en) | Laminate for semi-additive manufacturing and printed wiring board using same | |
WO2022097481A1 (en) | Laminate for semi-additive manufacturing and printed wiring board using same | |
WO2022097485A1 (en) | Laminate for semi-additive manufacturing and printed wiring board using same | |
WO2020130071A1 (en) | Method for manufacturing printed wiring board | |
WO2022097488A1 (en) | Laminate for semi-additive construction method and printed wiring board |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ENP | Entry into the national phase |
Ref document number: 2022527759 Country of ref document: JP Kind code of ref document: A |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 21889033 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 202180074841.5 Country of ref document: CN |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 21889033 Country of ref document: EP Kind code of ref document: A1 |