WO2022095033A1 - Spin orbit torque magnetic random access memory, manufacturing method therefor, and memory device - Google Patents

Spin orbit torque magnetic random access memory, manufacturing method therefor, and memory device Download PDF

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Publication number
WO2022095033A1
WO2022095033A1 PCT/CN2020/127534 CN2020127534W WO2022095033A1 WO 2022095033 A1 WO2022095033 A1 WO 2022095033A1 CN 2020127534 W CN2020127534 W CN 2020127534W WO 2022095033 A1 WO2022095033 A1 WO 2022095033A1
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WIPO (PCT)
Prior art keywords
via hole
spin
layer
orbit
magnetic memory
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PCT/CN2020/127534
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French (fr)
Chinese (zh)
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秦青
周雪
刘熹
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华为技术有限公司
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Priority to PCT/CN2020/127534 priority Critical patent/WO2022095033A1/en
Priority to CN202080103449.4A priority patent/CN116018900A/en
Publication of WO2022095033A1 publication Critical patent/WO2022095033A1/en

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

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  • the present application relates to the field of memory, and in particular, to a spin-orbit moment magnetic memory, a method for making the same, and a storage device.
  • SOT-MRAM Spin orbit torque magnetic random access memory
  • SOT-MTJ SOT magnetic tunneling junction
  • the existing SOT-MRAM needs to set an external magnetic field to ensure the deterministic magnetization reversal polarity of the free layer in the MTJ to realize information storage; the introduction of the external magnetic field will increase the size of the SOT-MRAM, which hinders its small size. development trend.
  • Embodiments of the present application provide a spin-orbit moment magnetic memory, a method for manufacturing the same, and a storage device, and a spin-orbit moment magnetic memory that does not require an external magnetic field.
  • the present application provides a spin-orbit moment magnetic memory, comprising a spin-orbit moment providing layer and a perpendicular magnetic tunnel junction; the magnetic tunnel junction includes a stacked free layer, a tunneling layer and a reference layer; a spin-orbit moment providing layer (ie The SOT providing layer) includes opposite first surfaces and second surfaces; the free layer is disposed on the first surface of the spin-orbit torque providing layer; the spin-orbit torque magnetic memory also includes a first surface disposed on the spin-orbit torque providing layer An insulating dielectric layer on the surface or on the second surface, the insulating dielectric layer is provided with a first via hole and a second via hole in the regions on opposite sides of the vertical magnetic tunnel junction, and the first via hole and the second via hole are in the Filled with ferromagnetic material.
  • a group of via holes (the first via hole and the second via hole) filled with ferromagnetic material are arranged in the insulating medium layer on the surface of the SOT providing layer. hole), the first via and the second via can generate a stray field, and the stray field is in the direction of the interface portion (ie, the in-plane stray field) located between the SOT supply layer and the free layer and the direction of the in-plane stray field applied to the SOT supply layer.
  • the in-plane stray field can interact with the spin current generated by the SOT supply layer to generate an upward or downward torque, so as to meet the magnetization reversal requirement of the free layer; that is, the spin-orbit torque provided by the embodiment of the present application.
  • the magnetic memory can complete the magnetization reversal of the free layer without an external magnetic field, thereby reducing the volume of the spin-orbit torque magnetic memory.
  • the ends of the first via hole and the second via hole near the spin-orbit torque supply layer are electrically connected to the spin-orbit torque supply layer; the first via hole is connected to the spin-orbit torque supply layer.
  • the electrical connection point and the first via hole are located in the same side region of the vertical magnetic tunnel junction, and the electrical connection point and the second via hole of the second via hole and the spin-orbit moment providing layer are located in the same side region of the vertical magnetic tunnel junction.
  • the direction of the current provided to the SOT supply layer through the two electrical connection points can be made parallel to the direction of the in-plane stray field generated by the first via hole and the second via hole, thereby satisfying the determined direction of the free layer ( up or down) magnetization flip.
  • the first via hole and the second via hole are directly connected to the surface of the spin-orbit moment providing layer; in this case, the first via hole and the second via hole are connected to the spin-orbiting moment providing layer
  • Adopting the direct through connection method can simplify the structure of the memory on the one hand, help reduce the volume of the memory, and meet the requirements of high-density storage; on the other hand, can simplify the manufacturing process and reduce the manufacturing cost.
  • the first via hole and the second via hole are connected to the spin-orbit torque providing layer through metal traces.
  • the spin-orbit torque magnetic memory further includes a writing circuit module, the writing circuit module includes a first end and a second end; the first end of the writing circuit module is electrically connected to the first via, and the writing circuit module The second end of the circuit is electrically connected to the second via, and the writing circuit module is used to selectively input electrical signals to the first and second ends; in this case, the writing circuit module passes through the first via and the second via Then the required current signal can be provided to the SOT supply layer.
  • the ferromagnetic material filled in the first via hole and the second via hole includes cobalt; in this case, the first via hole and the second via hole can be fabricated by using conventional equipment and processes, and it is easy to accomplish.
  • the ratio of the height of the first via hole and the second via hole to the aperture diameter is greater than or equal to 1; to ensure the intensity of the in-plane stray field generated between the first via hole and the second via hole.
  • the cross-section of the vertical magnetic tunnel junction is circular.
  • Embodiments of the present application provide a storage device, including the spin-orbit moment magnetic memory provided in any of the foregoing possible implementation manners.
  • Embodiments of the present application also provide a method for fabricating a spin-orbit moment magnetic memory, including:
  • an insulating medium layer provided with a first via hole and a second via hole; wherein the first via hole and the second via hole are filled with ferromagnetic material; forming a surface covering the first via hole and the second via hole on the surface of the insulating medium layer A spin-orbit moment providing layer of the hole; a vertical magnetic tunnel junction is formed on the surface of the spin-orbit moment providing layer, corresponding to a region between the first via hole and the second via hole.
  • a stray field can be generated through the first via hole and the second via hole, and the stray field is located at the interface portion between the SOT supply layer and the free layer.
  • the in-plane stray field can interact with the spin current generated by the SOT supply layer to generate an upward or downward moment, so as to satisfy the requirement of the free layer.
  • the magnetization inversion requirement that is, the spin-orbit torque magnetic memory provided by the embodiment of the present application can complete the magnetization inversion of the free layer without an external magnetic field, thereby reducing the volume of the spin-orbit torque magnetic memory.
  • FIG. 1 is a schematic structural diagram of a spin-orbit moment magnetic memory provided by an embodiment of the present application.
  • Fig. 2 is the sectional schematic diagram of the spin-orbit moment magnetic memory of Fig. 1 along OO' position;
  • FIG. 3 is a schematic diagram of magnetization inversion of a spin-orbit moment magnetic memory provided by an embodiment of the present application
  • FIG. 4 is a schematic diagram of magnetization inversion of a spin-orbit moment magnetic memory provided by an embodiment of the present application.
  • FIG. 5 is a schematic structural diagram of a spin-orbit moment magnetic memory provided by an embodiment of the present application.
  • FIG. 6 is a top view of the spin-orbit moment magnetic memory of FIG. 1;
  • FIG. 7 is a schematic structural diagram of a spin-orbit moment magnetic memory provided by an embodiment of the present application.
  • FIG. 8 is a schematic structural diagram of a spin-orbit moment magnetic memory provided by an embodiment of the present application.
  • FIG. 9 is a schematic diagram of the working principle of a spin-orbit moment magnetic memory provided by an embodiment of the present application.
  • FIG. 10 is a schematic diagram of the working principle of a spin-orbit moment magnetic memory provided by an embodiment of the application.
  • FIG. 11 is a schematic structural diagram of a spin-orbit moment magnetic memory provided by an embodiment of the application.
  • FIG. 12 is a schematic structural diagram of a spin-orbit moment magnetic memory provided by an embodiment of the application.
  • FIG. 13 is a schematic diagram of a memory cell according to an embodiment of the present application.
  • FIG. 14 is a schematic flowchart of a method for fabricating a spin-orbit moment magnetic memory provided by an embodiment of the present application.
  • FIG. 15 is a schematic diagram of a manufacturing process of a spin-orbit moment magnetic memory provided by an embodiment of the present application.
  • the embodiment of the present application provides a storage device, in which at least one spin-orbit moment magnetic memory (ie, SOT-MRAM) is set; the present application does not limit the number of spin-orbit moment magnetic memories in the storage device, In practice, you can choose the settings according to your needs.
  • SOT-MRAM spin-orbit moment magnetic memory
  • the spin-orbit moment magnetic tunnel junction (SOT-MTJ), the core device in the above-mentioned spin-orbit moment magnetic memory, adopts a perpendicular magnetic anisotropy (perpendicular magnetic anisotropy, PMA) system, that is, the magnetic tunnel junction is a vertical tunnel junction.
  • PMA perpendicular magnetic anisotropy
  • the direction of the magnetic field in the magnetic medium layer (free layer, reference layer) of the magnetic tunnel junction is perpendicular to the magnetic medium layer (for the specific interlayer structure of the magnetic tunnel junction, please refer to the related description below); compared with the prior art In this case, an external magnetic field needs to be used to ensure the deterministic flip of the vertical magnetic tunnel junction.
  • the spin-orbit moment magnetic memory provided by the embodiment of the present application can realize the deterministic flip of the vertical magnetic tunnel junction by setting an internal magnetic field, thereby reducing the spin-orbit moment magnetic memory.
  • the volume of the rotating orbital torque magnetic memory thereby meeting the high-density storage requirements of storage devices.
  • the spin-orbit moment magnetic memory includes a spin-orbit moment providing layer 1 (hereinafter abbreviated as SOT providing layer) and a perpendicular magnetic tunnel junction 2 (It may be abbreviated as vertical MTJ hereinafter).
  • the vertical magnetic tunnel junction 2 includes a free layer 21, a tunneling layer 22, and a reference layer 23 that are stacked in sequence; the SOT providing layer 1 is located on the side of the free layer 21 away from the tunneling layer 22, that is, the vertical magnetic tunnel junction 2 passes through The free layer 21 is provided on one side surface of the SOT providing layer 1 .
  • the magnetization direction of the reference layer 23 does not change (that is, the magnetism does not change), and the magnetism of the free layer 21 changes with the control current or other magnetic switching mechanisms; when the magnetization of the reference layer 23 and the free layer 21 are changed.
  • the directions are in the same direction and parallel (refer to FIG. 3 )
  • the spin-orbit magnetic memory exhibits low resistance; when the magnetization directions of the reference layer 23 and the free layer 21 are antiparallel (refer to FIG.
  • the spin-orbit magnetic memory exhibits low resistance;
  • the orbital moment magnetic memory exhibits high resistance; in this way, the "0" state or the "1" state of the stored data can be determined by an external control circuit based on the high and low resistance of the spin orbital moment magnetic memory.
  • the free layer 21 and the reference layer 23 may use at least one of ferromagnetic metal materials and ferromagnetic alloy materials.
  • the ferromagnetic metal materials can be iron (Fe), cobalt (Co), nickel (Ni) and other ferromagnetic metal materials
  • the ferromagnetic alloy materials can be iron cobalt boron (FeCoB), cobalt iron (CoFe), nickel iron (NiFe), etc.; this application does not limit this, and can be selected and set according to actual needs.
  • the tunneling layer 22 may use magnesium oxide (MgO), magnesium gadolinium oxide (MgGdO), titanium oxide (TiOx), tantalum oxide (TaOx), aluminum oxide (AlOx) ), one or more of magnesium-titanium oxide (MgTiOx); this application does not limit this, and can be selected and set according to actual needs.
  • MgO magnesium oxide
  • MgGdO magnesium gadolinium oxide
  • TiOx titanium oxide
  • TaOx tantalum oxide
  • AlOx aluminum oxide
  • MgTiOx magnesium-titanium oxide
  • the SOT providing layer 1 may use at least one of heavy metal materials and topological insulator materials; wherein, the heavy metal materials may be tungsten (W), platinum (Pt), tantalum (Ta), One or more of ruthenium (Ru), iridium (Ir), gold (Au) and other heavy metal materials; topological insulator materials can be bismuth selenide (Bi 2 Se 3 ), bismuth telluride (Bi 2 Te 3 ), One or more of antimony telluride (Sb 2 Te 3 ); this application does not limit this, and can be selected and set according to actual needs.
  • the heavy metal materials may be tungsten (W), platinum (Pt), tantalum (Ta), One or more of ruthenium (Ru), iridium (Ir), gold (Au) and other heavy metal materials
  • topological insulator materials can be bismuth selenide (Bi 2 Se 3 ), bismuth telluride (Bi 2 Te 3 ), One or more of antimony telluride (
  • the surface on which the free layer 21 of the SOT providing layer 1 is disposed is defined as the first surface A1 of the SOT providing layer 1 , and the surface disposed opposite to the first surface A1 is the second surface A1 Surface A2; an insulating medium layer 3 is also provided in the spin-orbit moment magnetic memory provided in the embodiment of the present application.
  • the above-mentioned insulating dielectric layer 3 may be disposed on the second surface A2 of the SOT providing layer 1 , that is, the insulating dielectric layer 3 is disposed on the SOT providing layer 1 away from the vertical magnetic tunnel junction 2 surface on one side.
  • the above-mentioned insulating medium layer 3 may be disposed on the first surface A1 of the SOT providing layer 1 , that is, the insulating medium layer 3 is disposed in the first surface A1 at the vertical magnetic tunnel junction. areas other than 2.
  • the insulating dielectric layer 3 is provided with a first via hole 31 and a second via hole 32 on two opposite sides of the vertical magnetic tunnel junction 2 , and the first via hole is 31 and the second via hole 32 are filled with ferromagnetic material; in this case, a stray field will be generated between the first via hole 31 and the second via hole 32, and the stray field will In the case where the direction of the interface portion (also called in-plane stray field) between the two is parallel to the current direction in the SOT supply layer 1, the in-plane stray field can interact with the spin current generated by the SOT supply layer 1, resulting in upward or downward moment, thereby realizing the magnetization reversal of the free layer 21 in a certain direction (up or down).
  • the direction of the interface portion also called in-plane stray field
  • the ferromagnetic material may include at least one of platinum (Pt) and cobalt (Co).
  • the first vias 31 and the second vias 32 may use cobalt vias (Co vias); in some possible implementations, the first vias 31 and the second vias In 32, cobalt (Co) material can be added to the non-magnetic material.
  • the aforementioned “regions on opposite sides of the vertical magnetic tunnel junction 2” refer to, as shown in FIG. 2 and FIG. In the entire thickness region around the 2 (that is, the entire region from top to bottom), the regions facing the two opposite sides of the vertical magnetic tunnel junction 2 are located on the left side of the vertical magnetic tunnel junction 2 as shown in Figures 2 and 6.
  • the SOT supply layer can be provided 1.
  • the two electrical connection points P1 and P2 that provide electrical signals are located in the same side region of the vertical magnetic tunnel junction 2 as the first via hole 31 and the second via hole 32;
  • One electrical connection point P1 and the first via hole 31 are located in the same side area of the vertical magnetic tunnel junction 2 (the left area in FIG. 7 ), and the other electrical connection point P2 that provides electrical signals to the SOT providing layer 1 and the second
  • the via hole 32 is located in the same side area of the vertical magnetic tunnel junction 2 (the right area in FIG.
  • a first via hole 31 and a second via hole 32 can be provided, which are respectively electrically connected to the SOT supply layer 1 in the same side region of the vertical magnetic tunnel junction 2; that is, referring to FIG.
  • the first via hole 31 The electrical connection point P1 and the first via 31 with the SOT supply layer 1 are located on the same side of the vertical magnetic tunnel junction 2, and the second via 31 and the electrical connection point P2 and the second via 32 of the SOT supply layer 1 are located in the vertical The same side region of the magnetic tunnel junction 2; in this case, the first via 31 and the second via 32 can provide the SOT with a current in the same direction as the in-plane stray field while generating the in-plane stray field Signal.
  • the present application does not limit the specific connection manner of the first via hole 31 , the second via hole 32 and the surface of the SOT providing layer 1 .
  • the first via hole 31 and the second via hole 32 are in contact with the surface of the SOT providing layer 1 (that is, the SOT providing layer 1 is in contact with the insulating dielectric layer 3 ).
  • the second surface A2 in FIG. 2, the first surface A1 in FIG. 5 are directly connected; that is, the first via hole 31 and the second via hole 32 directly penetrate to the surface of the SOT providing layer 1, so that The ferromagnetic material in the first via hole 31 and the second via hole 32 is in contact with the surface of the SOT providing layer 1, thereby achieving electrical connection.
  • the first via hole 31 and the second via hole 32 are respectively connected to the SOT providing layer 1 through metal traces L.
  • the present application does not limit the material, width, thickness, etc. of the metal wiring L, which can be set as required in practice.
  • connection method in which the holes are directly penetrated can simplify the structure of the memory, which is beneficial to reduce the volume of the memory and meet the requirements of high-density storage; on the other hand, it can simplify the manufacturing process and reduce the manufacturing cost.
  • the magnetization reversal of the free layer 21 is schematically described below in combination with the direction of the in-plane stray field generated by the first via hole 31 and the second via hole 32 and the current direction in the SOT providing layer 1 .
  • the dashed arrow is the direction of the in-plane stray field S generated between the first via hole 31 and the second via hole 32
  • the solid line arrow is the direction of the current I supplied to the SOT supply layer 1 .
  • the direction of the current I in the SOT supply layer 1 is parallel to the direction of the in-plane stray field S generated between the first via hole 31 and the second via hole 32 (refer to FIG.
  • the magnetization direction of the free layer 21 is upward (opposite to the magnetization direction of the reference layer 21), and the spin-orbit moment magnetic memory exhibits low resistance (for example, it can be in a "0" state); then, as shown in FIG. 10, when the SOT is changed When the direction of the current I in the layer 1 is provided, the direction of the current I in the SOT providing the layer 1 is antiparallel to the direction of the in-plane stray field S generated between the first via 31 and the second via 32, free The magnetization direction of the layer 21 is downward (same as the magnetization direction of the reference layer 21 ), and the spin-orbit magnetic memory exhibits a high resistance ("1" state) at this time.
  • the spin-orbit torque magnetic memory may further include a writing circuit module 4 , and the writing circuit module 4 includes a first end C1 and a second end C2 .
  • the first end 41 of the writing circuit module 4 is electrically connected to the first via hole 31
  • the second end 42 of the writing circuit module 4 is electrically connected to the second via hole 32 .
  • One end 41 and the second end 42 input electrical signals to provide the required current signal to the SOT providing layer 1 through the first via hole 31 and the second via hole 32, so as to satisfy the memory pair "0" state, "1" state storage requirements.
  • the ratio of the height of the first via hole 31 to the diameter of the hole can be set to be greater than or equal to 1
  • the ratio of the height to the diameter of the second via hole 32 is greater than or equal to 1.
  • the ratio of the height to the diameter of the first via hole 31 and the ratio of the height to the diameter of the second via hole 32 may be the same or different, which is not specifically limited in this application; illustratively, in some possible implementations , the heights of the first vias 31 and the second vias 32 are the same, and the apertures are the same;
  • the intensity of the in-plane stray field generated between the first via hole 31 and the second via hole 32 can be controlled by adjusting the distance between the first via hole 31 and the second via hole 32 ; on this basis, based on the formula where J th is the critical switching current density, e is the electronic constant, t F is the thickness of the free layer, ⁇ 0 is the magnetic permeability, M S is the saturation magnetization, is Planck's constant, ⁇ SH is the spin Hall angle, H K,eff is the effective anisotropy field, and H x is the in-plane stray field.
  • the critical switching current (J th ) of the SOT supply layer 1 can be reduced ), that is, the spin-orbit moment magnetic memory provided by the embodiment of the present application can realize deterministic flip with low power consumption by adjusting the intensity of the in-plane stray field generated between the first via hole 31 and the second via hole 32 .
  • a group of via holes (the first via hole and the second via hole) filled with ferromagnetic material are arranged in the insulating medium layer on the surface of the SOT providing layer. hole), the first via and the second via can generate a stray field, and the stray field is in the direction of the interface portion (ie, the in-plane stray field) located between the SOT supply layer and the free layer and the direction of the in-plane stray field applied to the SOT supply layer.
  • the in-plane stray field can interact with the spin current generated by the SOT supply layer to generate an upward or downward torque, so as to meet the magnetization reversal requirement of the free layer; that is, the spin-orbit torque provided by the embodiment of the present application.
  • the magnetic memory can complete the magnetization reversal of the free layer without an external magnetic field, thereby reducing the volume of the spin-orbit torque magnetic memory.
  • the shape of the vertical magnetic tunnel junction 2 is not limited in this application, and can be set as required in practice.
  • the cross section of the vertical magnetic tunnel junction 2 (that is, the plane perpendicular to the thickness direction) is a rectangle; that is, the vertical magnetic tunnel junction 2 is viewed from above
  • the cross-section at any position down to the bottom is a rectangle; of course, the size of the rectangular cross-section at different positions can be the same or different.
  • the cross section of the vertical magnetic tunnel junction 2 (that is, the plane perpendicular to the thickness direction) is circular; that is, the vertical magnetic tunnel junction 2 goes from top to bottom.
  • the cross-sections at any positions are circular; of course, the sizes of the circular cross-sections at different positions can be the same or different.
  • spin-orbit magnetic memory in addition to the aforementioned structures (such as 1, 2, 3, and 4), other structures (such as electrodes, transistors, etc.) may also be included. ), which is not limited in this application, and can be set as needed in practice.
  • a spin-orbit moment magnetic memory is provided in a storage unit, and the spin-orbit moment magnetic memory adopts the memory structure shown in FIG. 1 as an example.
  • the read and write process of the moment magnetic memory is schematically explained.
  • two transistors eg, NMOS
  • T1 and T2 are also provided in the memory unit.
  • the gate of the transistor T1 is connected to the read word line RWL (read word line), the source of the transistor T1 is connected to the bit line BL (bit line), the drain of the transistor T1 is connected to the reference layer 23; the gate of the transistor T2 is connected to The write word line WWL (write word line) is connected, the source of the transistor T2 is connected to the bit line BL, and the drain of the transistor T2 is connected to the SOT through the first via hole 31 (not shown in FIG. 13 , which can be combined with FIG. 13 and FIG. 2 ).
  • Layer 1 is provided for connection, and the SOT provides layer 1 is connected to the source line SL (source line) through a second via hole 32 (not shown in FIG. 13 , which can be combined with FIG. 13 and FIG. 2 ).
  • the read current Ir flows from the bit line BL through the transistor T1 and the spin-orbit magnetic memory to the source line SL; then the read current Ir obtained through the source line SL can be compared with the reference current to determine the data in the memory information ("0" or "1").
  • a high-level voltage is input to the gate of the transistor T2 through the word line WL, and the transistor T2 is turned on.
  • a high-level voltage or a low-level voltage is applied to the line SL; for example, when writing data "0", a high-level voltage is applied to the source line SL, and a low-level voltage is applied to the bit line BL, thereby writing the current Iw From the source line SL via the spin-orbit magnetic memory and the transistor T2 to the bit line BL; on the contrary, when writing data "1", a low-level voltage is applied to the source line SL, and a high-level voltage is applied to the bit line BL, Thus, the write current Iw goes from the source line SL to the source line SL via the transistor T2 and the spin-orbit torque magnetic memory.
  • an embodiment of the present application also provides a method for fabricating a spin-orbit moment magnetic memory, as shown in FIG. 14 , the fabrication method includes:
  • Step 01. Referring to FIG. 15 (a), an insulating dielectric layer 3 provided with a first via hole 31 and a second via hole 32 is formed; wherein the first via hole 31 and the second via hole 32 are filled with ferromagnetic Material.
  • the above step 01 may include: using silicon dioxide (SiO 2 ) to form a SiO 2 layer, and forming a first via hole 31 and a second via hole in the SiO 2 layer by an etching process 32. Then, the first via hole 31 and the second via hole 32 may be filled with a Co material by a hole filling process to form a Co via hole, so as to complete the above-mentioned fabrication of the insulating dielectric layer 3.
  • Step 02 as shown in FIG. 15( b ), an SOT providing layer 3 covering the first via hole 31 and the second via hole 32 is formed on the surface of the insulating dielectric layer 3 .
  • tungsten may be used to form the SOT providing layer 3 on the surface of the insulating dielectric layer 3, and the SOT providing layer 1 covers the first via hole 31 and the second via hole 32, so as to The SOT providing layer 1 is electrically connected with the ferromagnetic material filled in the first via hole 31 and the second via hole 32 .
  • Step 03 as shown in FIG. 15( c ), a vertical magnetic tunnel junction 2 is formed on the surface of the SOT providing layer 1 corresponding to the region between the first via hole 31 and the second via hole 32 .
  • the above-mentioned fabrication method is only illustrative to form the insulating dielectric layer 3, the SOT providing layer 1, and the vertical magnetic tunnel junction 2 in sequence; in some possible implementations, the vertical magnetic tunnel junction 2 may also be fabricated in sequence.
  • SOT providing layer 1, insulating dielectric layer 3 the specific manufacturing method can be made by referring to the above-mentioned manufacturing method, or by making appropriate adjustments in combination with related technologies, which will not be repeated here.
  • the spin-orbit moment magnetic memory shown in FIG. 5 can be produced correspondingly with reference to the above-mentioned embodiment of the method for producing a spin-orbit moment magnetic memory, or it can be produced in combination with The relevant technology is appropriately adjusted for production, which is not limited in this application.
  • a stray field can be generated through the first via hole and the second via hole, and the stray field is located at the interface portion between the SOT supply layer and the free layer.
  • the in-plane stray field can interact with the spin current generated by the SOT supply layer to generate an upward or downward moment, so as to satisfy the requirement of the free layer.
  • the magnetization inversion requirement that is, the spin-orbit torque magnetic memory provided by the embodiment of the present application can complete the magnetization inversion of the free layer without an external magnetic field, thereby reducing the volume of the spin-orbit torque magnetic memory.

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Abstract

Provided in the present application are a spin orbit torque magnetic random access memory, a manufacturing method therefor, and a storage device, which relate to the field of memories. Provided is a spin orbit torque magnetic random access memory without an external magnetic field. The spin orbit torque magnetic random access memory comprises a spin orbit torque provision layer and a perpendicular magnetic tunneling junction, wherein the magnetic tunneling junction comprises a free layer, a tunneling layer and a reference layer, which are arranged in a stacked manner; and the spin orbit torque provision layer comprises a first surface and a second surface, which are opposite each other, with the free layer being arranged on the first surface of the spin orbit torque provision layer. The spin orbit torque magnetic random access memory further comprises an insulating dielectric layer, which is arranged on the first surface or the second surface of the spin orbit torque provision layer, wherein a first via hole and a second via hole are provided in regions, located on two opposite sides of the perpendicular magnetic tunneling junction, in the insulating dielectric layer, and the first via hole and the second via hole are filled with a ferromagnetic material.

Description

自旋轨道矩磁存储器及其制作方法、存储设备Spin-orbit moment magnetic memory, method for making the same, and storage device 技术领域technical field
本申请涉及存储器领域，尤其涉及一种自旋轨道矩磁存储器及其制作方法、存储设备。The present application relates to the field of memory, and in particular, to a spin-orbit moment magnetic memory, a method for making the same, and a storage device.
背景技术Background technique
自旋轨道矩磁存储器(spin orbit torque magnetic random access memory，简称SOT-MRAM)是一种新型非易失性内存技术，以其速度快、功耗低、CMOS(complementary metal oxide semiconductor，互补式金属氧化物半导体)兼容性好逐步得到了广泛关注。SOT-MRAM中的核心存储部分是SOT磁性隧道结(magnetic tunneling junction，MTJ)，简称SOT-MTJ；SOT-MTJ具有非易失、高速读写、低功耗、无限次反复擦写等优点。Spin orbit torque magnetic random access memory (SOT-MRAM for short) is a new type of non-volatile memory technology. The compatibility of oxide semiconductors) has gradually gained widespread attention. The core storage part of SOT-MRAM is SOT magnetic tunneling junction (MTJ), abbreviated as SOT-MTJ; SOT-MTJ has the advantages of non-volatile, high-speed read and write, low power consumption, and infinite repeated erasing and writing.
现有的SOT-MRAM通过需要通过设置外部磁场，来保证MTJ中自由层的确定性磁化翻转极性，以实现信息存储；外部磁场的引入会导致SOT-MRAM体积增大，进而阻碍了其小型化的发展趋势。The existing SOT-MRAM needs to set an external magnetic field to ensure the deterministic magnetization reversal polarity of the free layer in the MTJ to realize information storage; the introduction of the external magnetic field will increase the size of the SOT-MRAM, which hinders its small size. development trend.
发明内容SUMMARY OF THE INVENTION
本申请实施例提供一种自旋轨道矩磁存储器及其制作方法、存储设备，提供一种无需外部磁场的自旋轨道矩磁存储器。Embodiments of the present application provide a spin-orbit moment magnetic memory, a method for manufacturing the same, and a storage device, and a spin-orbit moment magnetic memory that does not require an external magnetic field.
本申请提供一种自旋轨道矩磁存储器，包括自旋轨道矩提供层和垂直磁性隧道结；磁性隧道结包括层叠设置的自由层、遂穿层和参考层；自旋轨道矩提供层(即SOT提供层)包括相对的第一表面和第二表面；自由层设置在自旋轨道矩提供层的第一表面上；自旋轨道矩磁存储器还包括设置在自旋轨道矩提供层的第一表面或第二表面上的绝缘介质层，绝缘介质层中在位于垂直磁性隧道结相对的两侧区域设置有第一过孔和第二过孔，且第一个过孔和第二过孔中填充有铁磁材料。The present application provides a spin-orbit moment magnetic memory, comprising a spin-orbit moment providing layer and a perpendicular magnetic tunnel junction; the magnetic tunnel junction includes a stacked free layer, a tunneling layer and a reference layer; a spin-orbit moment providing layer (ie The SOT providing layer) includes opposite first surfaces and second surfaces; the free layer is disposed on the first surface of the spin-orbit torque providing layer; the spin-orbit torque magnetic memory also includes a first surface disposed on the spin-orbit torque providing layer An insulating dielectric layer on the surface or on the second surface, the insulating dielectric layer is provided with a first via hole and a second via hole in the regions on opposite sides of the vertical magnetic tunnel junction, and the first via hole and the second via hole are in the Filled with ferromagnetic material.
综上所述，本申请实施例提供的自旋轨道矩磁存储器，通过在位于SOT提供层表面的绝缘介质层中设置填充有铁磁材料的一组过孔(第一过孔和第二过孔)，第一过孔和第二过孔能够产生杂散场，并且该杂散场在位于SOT提供层与自由层之间的界面部分(即面内杂散场)的方向与向SOT提供层施加的电流平行时，该面内杂散场能够与SOT提供层产生的自旋流相互作用产生向上或向下的力矩，从而满足自由层的磁化翻转需求；也即本申请实施例提供的自旋轨道矩磁存储器无需外部磁场即可完成对自由层的磁化翻转，进而能够减小自旋轨道矩磁存储器的体积。To sum up, in the spin-orbit moment magnetic memory provided by the embodiments of the present application, a group of via holes (the first via hole and the second via hole) filled with ferromagnetic material are arranged in the insulating medium layer on the surface of the SOT providing layer. hole), the first via and the second via can generate a stray field, and the stray field is in the direction of the interface portion (ie, the in-plane stray field) located between the SOT supply layer and the free layer and the direction of the in-plane stray field applied to the SOT supply layer. When the current is parallel, the in-plane stray field can interact with the spin current generated by the SOT supply layer to generate an upward or downward torque, so as to meet the magnetization reversal requirement of the free layer; that is, the spin-orbit torque provided by the embodiment of the present application. The magnetic memory can complete the magnetization reversal of the free layer without an external magnetic field, thereby reducing the volume of the spin-orbit torque magnetic memory.
在一些可能实现的方式中，第一过孔和第二过孔靠近自旋轨道矩提供层一侧的端部与自旋轨道矩提供层电连接；第一过孔与自旋轨道矩提供层的电连接点和第一过孔位于垂直磁性隧道结的同侧区域，第二过孔与自旋轨道矩提供层的电连接点和第二过孔位于垂直磁性隧道结的同侧区域。In some possible implementation manners, the ends of the first via hole and the second via hole near the spin-orbit torque supply layer are electrically connected to the spin-orbit torque supply layer; the first via hole is connected to the spin-orbit torque supply layer. The electrical connection point and the first via hole are located in the same side region of the vertical magnetic tunnel junction, and the electrical connection point and the second via hole of the second via hole and the spin-orbit moment providing layer are located in the same side region of the vertical magnetic tunnel junction.
在此情况下，能够使得通过两个电连接点向SOT提供层提供的电流方向与第一过孔和第二过孔产生的面内杂散场的方向平行，进而满足对自由层的确定方向(向上或向下) 的磁化翻转。In this case, the direction of the current provided to the SOT supply layer through the two electrical connection points can be made parallel to the direction of the in-plane stray field generated by the first via hole and the second via hole, thereby satisfying the determined direction of the free layer ( up or down) magnetization flip.
在一些可能实现的方式中，第一过孔、第二过孔与自旋轨道矩提供层的表面直接连接；在此情况下，第一过孔、第二过孔与自旋轨道矩提供层采用直接贯通的连接方式，一方面，能够简化存储器的结构，有利于减小存储器的体积，满足高密度存储的需求；另一方面，能够简化制作工艺，降低制作成本。In some possible implementations, the first via hole and the second via hole are directly connected to the surface of the spin-orbit moment providing layer; in this case, the first via hole and the second via hole are connected to the spin-orbiting moment providing layer Adopting the direct through connection method can simplify the structure of the memory on the one hand, help reduce the volume of the memory, and meet the requirements of high-density storage; on the other hand, can simplify the manufacturing process and reduce the manufacturing cost.
在一些可能实现的方式中，第一过孔、第二过孔通过金属走线与自旋轨道矩提供层连接。In some possible implementation manners, the first via hole and the second via hole are connected to the spin-orbit torque providing layer through metal traces.
在一些可能实现的方式中，自旋轨道矩磁存储器还包括写电路模块，写电路模块包括第一端和第二端；写电路模块的第一端与第一过孔电连接，写电路模块的第二端与第二过孔电连接，写电路模块用于有选择的向第一端和第二端输入电信号；在此情况下，写电路模块通过第一过孔和第二过孔即可向SOT提供层提供所需要的电流信号。In some possible implementation manners, the spin-orbit torque magnetic memory further includes a writing circuit module, the writing circuit module includes a first end and a second end; the first end of the writing circuit module is electrically connected to the first via, and the writing circuit module The second end of the circuit is electrically connected to the second via, and the writing circuit module is used to selectively input electrical signals to the first and second ends; in this case, the writing circuit module passes through the first via and the second via Then the required current signal can be provided to the SOT supply layer.
在一些可能实现的方式中，第一过孔和第二过孔中填充的铁磁材料包括钴；在此情况下，第一过孔和第二过孔采用常规设备、工艺即可制作，易于实现。In some possible implementations, the ferromagnetic material filled in the first via hole and the second via hole includes cobalt; in this case, the first via hole and the second via hole can be fabricated by using conventional equipment and processes, and it is easy to accomplish.
在一些可能实现的方式中，第一过孔、第二过孔的高度和孔径的比值大于或等于1；以保证第一过孔和第二过孔之间产生的面内杂散场的强度。In some possible implementation manners, the ratio of the height of the first via hole and the second via hole to the aperture diameter is greater than or equal to 1; to ensure the intensity of the in-plane stray field generated between the first via hole and the second via hole.
在一些可能实现的方式中，垂直磁性隧道结的横截面为圆形。In some possible implementations, the cross-section of the vertical magnetic tunnel junction is circular.
本申请实施例提供一种存储设备，包括如前述任一种可能实现的方式中提供的自旋轨道矩磁存储器。Embodiments of the present application provide a storage device, including the spin-orbit moment magnetic memory provided in any of the foregoing possible implementation manners.
本申请实施例还提供一种自旋轨道矩磁存储器的制作方法，包括：Embodiments of the present application also provide a method for fabricating a spin-orbit moment magnetic memory, including:
形成设置有第一过孔和第二过孔的绝缘介质层；其中，第一过孔和第二过孔中填充铁磁材料；在绝缘介质层的表面形成覆盖第一过孔和第二过孔的自旋轨道矩提供层；在自旋轨道矩提供层的表面、对应第一过孔和第二过孔之间的区域形成垂直磁性隧道结。forming an insulating medium layer provided with a first via hole and a second via hole; wherein the first via hole and the second via hole are filled with ferromagnetic material; forming a surface covering the first via hole and the second via hole on the surface of the insulating medium layer A spin-orbit moment providing layer of the hole; a vertical magnetic tunnel junction is formed on the surface of the spin-orbit moment providing layer, corresponding to a region between the first via hole and the second via hole.
采用本申请实施例提供的制作方法制作的自旋轨道矩磁存储器，通过第一过孔和第二过孔能够产生杂散场，并且该杂散场在位于SOT提供层与自由层之间的界面部分(即面内杂散场)的方向与向SOT提供层施加的电流平行时，该面内杂散场能够与SOT提供层产生的自旋流相互作用产生向上或向下的力矩，从而满足自由层的磁化翻转需求；也即本申请实施例提供的自旋轨道矩磁存储器无需外部磁场即可完成对自由层的磁化翻转，进而能够减小自旋轨道矩磁存储器的体积。For the spin-orbit moment magnetic memory fabricated by the fabrication method provided in the embodiment of the present application, a stray field can be generated through the first via hole and the second via hole, and the stray field is located at the interface portion between the SOT supply layer and the free layer. When the direction of the in-plane stray field (that is, the in-plane stray field) is parallel to the current applied to the SOT supply layer, the in-plane stray field can interact with the spin current generated by the SOT supply layer to generate an upward or downward moment, so as to satisfy the requirement of the free layer. The magnetization inversion requirement; that is, the spin-orbit torque magnetic memory provided by the embodiment of the present application can complete the magnetization inversion of the free layer without an external magnetic field, thereby reducing the volume of the spin-orbit torque magnetic memory.
附图说明Description of drawings
图1为本申请实施例提供的一种自旋轨道矩磁存储器的结构示意图；1 is a schematic structural diagram of a spin-orbit moment magnetic memory provided by an embodiment of the present application;
图2为图1的自旋轨道矩磁存储器沿OO’位置的剖面示意图；Fig. 2 is the sectional schematic diagram of the spin-orbit moment magnetic memory of Fig. 1 along OO' position;
图3为本申请实施例提供的一种自旋轨道矩磁存储器的磁化翻转示意图；3 is a schematic diagram of magnetization inversion of a spin-orbit moment magnetic memory provided by an embodiment of the present application;
图4为本申请实施例提供的一种自旋轨道矩磁存储器的磁化翻转示意图；4 is a schematic diagram of magnetization inversion of a spin-orbit moment magnetic memory provided by an embodiment of the present application;
图5为本申请实施例提供的一种自旋轨道矩磁存储器的结构示意图；5 is a schematic structural diagram of a spin-orbit moment magnetic memory provided by an embodiment of the present application;
图6为图1的自旋轨道矩磁存储器的俯视图；6 is a top view of the spin-orbit moment magnetic memory of FIG. 1;
图7为本申请实施例提供的一种自旋轨道矩磁存储器的结构示意图；7 is a schematic structural diagram of a spin-orbit moment magnetic memory provided by an embodiment of the present application;
图8为本申请实施例提供的一种自旋轨道矩磁存储器的结构示意图；8 is a schematic structural diagram of a spin-orbit moment magnetic memory provided by an embodiment of the present application;
图9为本申请实施例提供的一种自旋轨道矩磁存储器的工作原理示意图；9 is a schematic diagram of the working principle of a spin-orbit moment magnetic memory provided by an embodiment of the present application;
图10为本申请实施例提供的一种自旋轨道矩磁存储器的工作原理示意图；10 is a schematic diagram of the working principle of a spin-orbit moment magnetic memory provided by an embodiment of the application;
图11为本申请实施例提供的一种自旋轨道矩磁存储器的结构示意图；11 is a schematic structural diagram of a spin-orbit moment magnetic memory provided by an embodiment of the application;
图12为本申请实施例提供的一种自旋轨道矩磁存储器的结构示意图；12 is a schematic structural diagram of a spin-orbit moment magnetic memory provided by an embodiment of the application;
图13为本申请实施例提供的一种存储器单元的示意图；FIG. 13 is a schematic diagram of a memory cell according to an embodiment of the present application;
图14为本申请实施例提供的一种自旋轨道矩磁存储器的制作方法流程示意图；14 is a schematic flowchart of a method for fabricating a spin-orbit moment magnetic memory provided by an embodiment of the present application;
图15为本申请实施例提供的一种自旋轨道矩磁存储器的制作过程示意图。FIG. 15 is a schematic diagram of a manufacturing process of a spin-orbit moment magnetic memory provided by an embodiment of the present application.
具体实施方式Detailed ways
为使本申请的目的、技术方案和优点更加清楚，下面将结合本申请中的附图，对本申请中的技术方案进行清楚地描述，显然，所描述的实施例是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。In order to make the purpose, technical solutions and advantages of the present application clearer, the technical solutions in the present application will be clearly described below with reference to the accompanying drawings in the present application. Obviously, the described embodiments are part of the embodiments of the present application, and Not all examples. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application.
本申请的说明书实施例和权利要求书及附图中的术语“第一”、“第二”等仅用于区分描述的目的，而不能理解为指示或暗示相对重要性，也不能理解为指示或暗示顺序。“连接”、“相连”等类似的词语，用于表达不同组件之间的互通或互相作用，可以包括直接相连或通过其他组件间接相连。“至少一个(项)”是指一个或者多个，“多个”是指两个或两个以上。此外，术语“包括”和“具有”以及他们的任何变形，意图在于覆盖不排他的包含，例如，包含了一系列步骤或单元。方法、产品或设备不必限于清楚地列出的那些步骤或单元，而是可包括没有清楚地列出的或对于这些过程、方法、产品或设备固有的其它步骤或单元。“上”、“下”、“左”、“右”等仅用于相对于附图中的部件的方位而言的，这些方向性术语是相对的概念，它们用于相对于的描述和澄清，其可以根据附图中的部件所放置的方位的变化而相应地发生变化。The terms "first", "second", etc. in the description, embodiments and claims of the present application and the drawings are only used for the purpose of distinguishing and describing, and should not be construed as indicating or implying relative importance, nor should they be construed as indicating or implied order. "Connected", "connected" and similar words are used to express the intercommunication or interaction between different components, and may include direct connection or indirect connection through other components. "At least one (item)" means one or more, and "plurality" means two or more. Furthermore, the terms "comprising" and "having" and any variations thereof, are intended to cover non-exclusive inclusion, eg, comprising a series of steps or elements. The method, product or apparatus is not necessarily limited to those steps or units expressly listed, but may include other steps or units not expressly listed or inherent to the process, method, product or apparatus. "Top", "bottom", "left", "right", etc. are only used relative to the orientation of components in the drawings, these directional terms are relative concepts, and they are used for relative description and clarification , which may vary according to the orientation in which the components in the figures are placed.
本申请实施例提供一种存储设备，该存储设备中设置至少一个自旋轨道矩磁存储器(也即SOT-MRAM)；本申请对于存储设备中自旋轨道矩磁存储器的个数不做限制，实际中可以根据需要选择设置即可。The embodiment of the present application provides a storage device, in which at least one spin-orbit moment magnetic memory (ie, SOT-MRAM) is set; the present application does not limit the number of spin-orbit moment magnetic memories in the storage device, In practice, you can choose the settings according to your needs.
上述自旋轨道矩磁存储器中的核心器件自旋轨道矩磁性隧道结(SOT-MTJ)采用垂直磁各向异性(perpendicular magnetic anisotropy，PMA)体系，也即磁性隧道结为垂直隧道结，也可以说，该磁性隧道结的磁介质层(自由层、参考层)中的磁场方向与磁介质层垂直(关于磁性隧道结的具体层间结构可参考下文中的相关描述)；相比现有技术中，需要通过外部磁场来保证垂直磁性隧道结的确定性翻转，本申请实施例提供的自旋轨道矩磁存储器通过设置内部磁场即可实现垂直磁性隧道结的确定性翻转，从而能够减小自旋轨道矩磁存储器的体积，进而满足存储设备的高密度存储需求。The spin-orbit moment magnetic tunnel junction (SOT-MTJ), the core device in the above-mentioned spin-orbit moment magnetic memory, adopts a perpendicular magnetic anisotropy (perpendicular magnetic anisotropy, PMA) system, that is, the magnetic tunnel junction is a vertical tunnel junction. In other words, the direction of the magnetic field in the magnetic medium layer (free layer, reference layer) of the magnetic tunnel junction is perpendicular to the magnetic medium layer (for the specific interlayer structure of the magnetic tunnel junction, please refer to the related description below); compared with the prior art In this case, an external magnetic field needs to be used to ensure the deterministic flip of the vertical magnetic tunnel junction. The spin-orbit moment magnetic memory provided by the embodiment of the present application can realize the deterministic flip of the vertical magnetic tunnel junction by setting an internal magnetic field, thereby reducing the spin-orbit moment magnetic memory. The volume of the rotating orbital torque magnetic memory, thereby meeting the high-density storage requirements of storage devices.
以下对本申请实施例提供的自旋轨道矩磁存储器进行具体的说明。The spin-orbit moment magnetic memory provided by the embodiments of the present application will be specifically described below.
如图1和图2(图1沿OO’位置的剖面示意图)所示，该自旋轨道矩磁存储器包括自旋轨道矩提供层1(下文可简写为SOT提供层)和垂直磁性隧道结2(下文可简写为垂直MTJ)。其中，垂直磁性隧道结2包括依次层叠设置的自由层21、隧穿层22、参考层23；SOT提供层1位于自由层21背离隧穿层22的一侧，也即垂直磁性隧道结2通过自由层21设置在SOT提供层1的一侧表面。As shown in FIG. 1 and FIG. 2 (a schematic cross-sectional view along the OO' position of FIG. 1 ), the spin-orbit moment magnetic memory includes a spin-orbit moment providing layer 1 (hereinafter abbreviated as SOT providing layer) and a perpendicular magnetic tunnel junction 2 (It may be abbreviated as vertical MTJ hereinafter). The vertical magnetic tunnel junction 2 includes a free layer 21, a tunneling layer 22, and a reference layer 23 that are stacked in sequence; the SOT providing layer 1 is located on the side of the free layer 21 away from the tunneling layer 22, that is, the vertical magnetic tunnel junction 2 passes through The free layer 21 is provided on one side surface of the SOT providing layer 1 .
此处可以理解的是，参考层23的磁化方向不变(也即磁性不变)，自由层21的磁性 随控制电流或者其他磁性翻转机制改变而改变；当参考层23与自由层21的磁化方向同向平行时(参考图3所示)，该自旋轨道矩磁存储器呈现低电阻；当参考层23与自由层21的磁化方向反向平行时(参考图4所示)，该自旋轨道矩磁存储器呈现高电阻；这样一来，从而能够通过外部控制电路基于自旋轨道矩磁存储器的高、低电阻，来判断存储数据的“0”态或者“1”态。It can be understood here that the magnetization direction of the reference layer 23 does not change (that is, the magnetism does not change), and the magnetism of the free layer 21 changes with the control current or other magnetic switching mechanisms; when the magnetization of the reference layer 23 and the free layer 21 are changed. When the directions are in the same direction and parallel (refer to FIG. 3 ), the spin-orbit magnetic memory exhibits low resistance; when the magnetization directions of the reference layer 23 and the free layer 21 are antiparallel (refer to FIG. 4 ), the spin-orbit magnetic memory exhibits low resistance; The orbital moment magnetic memory exhibits high resistance; in this way, the "0" state or the "1" state of the stored data can be determined by an external control circuit based on the high and low resistance of the spin orbital moment magnetic memory.
示意的，在一些可能实现的方式中，自由层21、参考层23可以采用铁磁金属材料、铁磁合金材料中的至少一种。其中，铁磁金属材料可以采用采用铁(Fe)、钴(Co)、镍(Ni)等铁磁金属材料，铁磁合金材料可以采用铁钴硼(FeCoB)、钴铁(CoFe)、镍铁(NiFe)等；本申请对此不做限制，实际中可以根据需要进行选择设置。Illustratively, in some possible implementation manners, the free layer 21 and the reference layer 23 may use at least one of ferromagnetic metal materials and ferromagnetic alloy materials. Among them, the ferromagnetic metal materials can be iron (Fe), cobalt (Co), nickel (Ni) and other ferromagnetic metal materials, and the ferromagnetic alloy materials can be iron cobalt boron (FeCoB), cobalt iron (CoFe), nickel iron (NiFe), etc.; this application does not limit this, and can be selected and set according to actual needs.
示意的，在一些可能实现的方式中，隧穿层22可以采用氧化镁(MgO)、镁钆氧化物(MgGdO)、钛氧化物(TiOx)、钽氧化物(TaOx)、铝氧化物(AlOx)、镁钛氧化物(MgTiOx)中的一种或多种；本申请对此不做限制，实际中可以根据需要进行选择设置。Illustratively, in some possible implementation manners, the tunneling layer 22 may use magnesium oxide (MgO), magnesium gadolinium oxide (MgGdO), titanium oxide (TiOx), tantalum oxide (TaOx), aluminum oxide (AlOx) ), one or more of magnesium-titanium oxide (MgTiOx); this application does not limit this, and can be selected and set according to actual needs.
示意的，在一些可能实现的方式中，SOT提供层1可以采用重金属材料、拓扑绝缘体材料中的至少一种；其中，重金属材料可以采用钨(W)、铂(Pt)、钽(Ta)、钌(Ru)、铱(Ir)、金(Au)等重金属材料中的一种或多种；拓扑绝缘体材料可以采用硒化铋(Bi 2Se 3)、碲化铋(Bi 2Te 3)、碲化锑(Sb 2Te 3)中的一种或多种；本申请对此不做限制，实际中可以根据需要选择设置。 Illustratively, in some possible implementations, the SOT providing layer 1 may use at least one of heavy metal materials and topological insulator materials; wherein, the heavy metal materials may be tungsten (W), platinum (Pt), tantalum (Ta), One or more of ruthenium (Ru), iridium (Ir), gold (Au) and other heavy metal materials; topological insulator materials can be bismuth selenide (Bi 2 Se 3 ), bismuth telluride (Bi 2 Te 3 ), One or more of antimony telluride (Sb 2 Te 3 ); this application does not limit this, and can be selected and set according to actual needs.
在此基础上，参考图2和图5所示，将SOT提供层1设置自由层21的表面定义为SOT提供层1的第一表面A1，与该第一表面A1相对设置的表面为第二表面A2；在本申请实施例提供的自旋轨道矩磁存储器中还设置有绝缘介质层3。On this basis, referring to FIG. 2 and FIG. 5 , the surface on which the free layer 21 of the SOT providing layer 1 is disposed is defined as the first surface A1 of the SOT providing layer 1 , and the surface disposed opposite to the first surface A1 is the second surface A1 Surface A2; an insulating medium layer 3 is also provided in the spin-orbit moment magnetic memory provided in the embodiment of the present application.
在一些可能实现的方式中，参考图2所示，上述绝缘介质层3可以设置在SOT提供层1的第二表面A2，也即绝缘介质层3设置在SOT提供层1背离垂直磁性隧道结2一侧的表面。In some possible implementations, as shown in FIG. 2 , the above-mentioned insulating dielectric layer 3 may be disposed on the second surface A2 of the SOT providing layer 1 , that is, the insulating dielectric layer 3 is disposed on the SOT providing layer 1 away from the vertical magnetic tunnel junction 2 surface on one side.
在一些可能实现的方式中，参考图5所示，上述绝缘介质层3可以设置在SOT提供层1的第一表面A1，也即绝缘介质层3设置在第一表面A1中位于垂直磁性隧道结2以外的区域。In some possible implementations, as shown in FIG. 5 , the above-mentioned insulating medium layer 3 may be disposed on the first surface A1 of the SOT providing layer 1 , that is, the insulating medium layer 3 is disposed in the first surface A1 at the vertical magnetic tunnel junction. areas other than 2.
在此基础上，如图2、图5所示，绝缘介质层3中在位于垂直磁性隧道结2相对的两侧区域设置有第一过孔31和第二过孔32，并且第一过孔31和第二过孔32中填充有铁磁材料；在此情况下，第一过孔31和第二过孔32之间会产生杂散场，该杂散场在SOT提供层1与自由层21之间的界面部分(也可以称为面内杂散场)的方向与SOT提供层1中的电流方向平行的情况下，该面内杂散场能够与SOT提供层1产生的自旋流相互作用，产生向上或向下的力矩，从而实现对自由层21的确定方向(向上或向下)的磁化翻转。On this basis, as shown in FIG. 2 and FIG. 5 , the insulating dielectric layer 3 is provided with a first via hole 31 and a second via hole 32 on two opposite sides of the vertical magnetic tunnel junction 2 , and the first via hole is 31 and the second via hole 32 are filled with ferromagnetic material; in this case, a stray field will be generated between the first via hole 31 and the second via hole 32, and the stray field will In the case where the direction of the interface portion (also called in-plane stray field) between the two is parallel to the current direction in the SOT supply layer 1, the in-plane stray field can interact with the spin current generated by the SOT supply layer 1, resulting in upward or downward moment, thereby realizing the magnetization reversal of the free layer 21 in a certain direction (up or down).
本申请对于第一过孔31和第二过孔32中填充的铁磁材料的种类不做具体限制，例如，该铁磁材料可以包括铂(Pt)、钴(Co)中的至少一种。示意的，在一些可能实现的方式中，第一过孔31和第二过孔32可以采用钴过孔(Co via)；在一些可能实现的方式中，第一过孔31和第二过孔32中可以采用在无磁性材料中添加钴(Co)材料。The application does not specifically limit the types of the ferromagnetic material filled in the first via hole 31 and the second via hole 32 , for example, the ferromagnetic material may include at least one of platinum (Pt) and cobalt (Co). Illustratively, in some possible implementations, the first vias 31 and the second vias 32 may use cobalt vias (Co vias); in some possible implementations, the first vias 31 and the second vias In 32, cobalt (Co) material can be added to the non-magnetic material.
需要说明的是，前述“垂直磁性隧道结2相对的两侧区域”是指，参考图2和图6(图1的俯视图)所示，在自旋轨道矩磁存储器中，位于垂直磁性隧道结2四周的整个厚度区 域(即从上到下的整个区域)中，与垂直磁性隧道结2两个相对侧面的正对区域，如图2、图6中示意的位于垂直磁性隧道结2的左侧面和右侧面的正对区域B1、B2。It should be noted that the aforementioned “regions on opposite sides of the vertical magnetic tunnel junction 2” refer to, as shown in FIG. 2 and FIG. In the entire thickness region around the 2 (that is, the entire region from top to bottom), the regions facing the two opposite sides of the vertical magnetic tunnel junction 2 are located on the left side of the vertical magnetic tunnel junction 2 as shown in Figures 2 and 6. The facing areas B1, B2 on the side and right side.
还需要说明的是，为了保证SOT提供层1中的电流方向，第一过孔31和第二过孔32产生的面内杂散场的方向平行，如图7所示，可以设置向SOT提供层1提供电信号的两个电连接点P1、P2分别与第一过孔31、第二过孔32位于垂直磁性隧道结2的同侧区域；也就是说，向SOT提供层1提供电信号的一个电连接点P1与第一过孔31位于垂直磁性隧道结2的同侧区域(如图7中的左侧区域)，向SOT提供层1提供电信号的另一个电连接点P2与第二过孔32位于垂直磁性隧道结2的同侧区域(如图7中的右侧区域)，从而即可保证通过两个电连接点P1、P2向SOT提供层1提供的电流方向，与第一过孔31和第二过孔32产生的面内杂散场的方向平行，进而满足对自由层21的确定方向(向上或向下)的磁化翻转。It should also be noted that, in order to ensure the current direction in the SOT supply layer 1, the directions of the in-plane stray fields generated by the first via hole 31 and the second via hole 32 are parallel. As shown in FIG. 7, the SOT supply layer can be provided 1. The two electrical connection points P1 and P2 that provide electrical signals are located in the same side region of the vertical magnetic tunnel junction 2 as the first via hole 31 and the second via hole 32; One electrical connection point P1 and the first via hole 31 are located in the same side area of the vertical magnetic tunnel junction 2 (the left area in FIG. 7 ), and the other electrical connection point P2 that provides electrical signals to the SOT providing layer 1 and the second The via hole 32 is located in the same side area of the vertical magnetic tunnel junction 2 (the right area in FIG. 7 ), so that the direction of the current provided to the SOT supply layer 1 through the two electrical connection points P1 and P2 can be guaranteed to be the same as that of the first The directions of the in-plane stray fields generated by the via holes 31 and the second via holes 32 are parallel, so as to satisfy the magnetization reversal of a certain direction (upward or downward) of the free layer 21 .
在此基础上，为了避免额外设置向SOT提供层1提供电信号的信号线等结构，以简化自旋轨道矩磁存储器的结构，减小自旋轨道矩磁存储器的体积，在一些可能实现的方式中，可以设置第一过孔31和第二过孔32，分别在垂直磁性隧道结2的同侧区域与SOT提供层1电连接；也即，参考图2所示，第一过孔31与SOT提供层1的电连接点P1和第一过孔31位于垂直磁性隧道结2的同侧区域，第二过孔31与SOT提供层1的电连接点P2和第二过孔32位于垂直磁性隧道结2的同侧区域；在此情况下，第一过孔31和第二过孔32在产生的面内杂散场的同时，能够向SOT提供层1与面内杂散场方向相同的电流信号。On this basis, in order to avoid additional structures such as signal lines that provide electrical signals to the SOT supply layer 1, to simplify the structure of the spin-orbit torque magnetic memory and reduce the volume of the spin-orbit torque magnetic memory, in some possible implementations In this way, a first via hole 31 and a second via hole 32 can be provided, which are respectively electrically connected to the SOT supply layer 1 in the same side region of the vertical magnetic tunnel junction 2; that is, referring to FIG. 2 , the first via hole 31 The electrical connection point P1 and the first via 31 with the SOT supply layer 1 are located on the same side of the vertical magnetic tunnel junction 2, and the second via 31 and the electrical connection point P2 and the second via 32 of the SOT supply layer 1 are located in the vertical The same side region of the magnetic tunnel junction 2; in this case, the first via 31 and the second via 32 can provide the SOT with a current in the same direction as the in-plane stray field while generating the in-plane stray field Signal.
本申请对于第一过孔31、第二过孔32与SOT提供层1的表面的具体连接方式不做限制。The present application does not limit the specific connection manner of the first via hole 31 , the second via hole 32 and the surface of the SOT providing layer 1 .
例如，在一些可能实现的方式中，参考图2和图5所示，第一过孔31、第二过孔32与SOT提供层1的表面(也即SOT提供层1与绝缘介质层3接触的表面；如图2中的第二表面A2、图5中的第一表面A1)直接连接；也即第一过孔31、第二过孔32直接贯通至SOT提供层1的表面，以使得第一过孔31和第二过孔32中的铁磁材料与SOT提供层1的表面接触，从而实现电连接。For example, in some possible implementations, as shown in FIG. 2 and FIG. 5 , the first via hole 31 and the second via hole 32 are in contact with the surface of the SOT providing layer 1 (that is, the SOT providing layer 1 is in contact with the insulating dielectric layer 3 ). 2, the second surface A2 in FIG. 2, the first surface A1 in FIG. 5) are directly connected; that is, the first via hole 31 and the second via hole 32 directly penetrate to the surface of the SOT providing layer 1, so that The ferromagnetic material in the first via hole 31 and the second via hole 32 is in contact with the surface of the SOT providing layer 1, thereby achieving electrical connection.
又例如，在一些可能实现的方式中，如图8所示，第一过孔31、第二过孔32分别通过金属走线L与SOT提供层1连接。当然，本申请对于金属走线L的材质、宽度、厚度等不做限制，实际中可以根据需要进行设置。For another example, in some possible implementation manners, as shown in FIG. 8 , the first via hole 31 and the second via hole 32 are respectively connected to the SOT providing layer 1 through metal traces L. Of course, the present application does not limit the material, width, thickness, etc. of the metal wiring L, which can be set as required in practice.
此处需要说明的是，相比于图8中示意的第一过孔31、第二过孔32与SOT提供层1之间采用金属走线L的连接方式，图2和图5中采用过孔直接贯通的连接方式，一方面，能够简化存储器的结构，有利于减小存储器的体积，满足高密度存储的需求；另一方面，能够简化制作工艺，降低制作成本。It should be noted here that, compared with the connection method in which the metal trace L is used between the first via hole 31 and the second via hole 32 and the SOT providing layer 1 shown in FIG. 8 , in FIG. 2 and FIG. On the one hand, the connection method in which the holes are directly penetrated can simplify the structure of the memory, which is beneficial to reduce the volume of the memory and meet the requirements of high-density storage; on the other hand, it can simplify the manufacturing process and reduce the manufacturing cost.
示意的，以下结合第一过孔31和第二过孔32产生的面内杂散场的方向与SOT提供层1中的电流方向，对自由层21的磁化翻转进行示意说明。Illustratively, the magnetization reversal of the free layer 21 is schematically described below in combination with the direction of the in-plane stray field generated by the first via hole 31 and the second via hole 32 and the current direction in the SOT providing layer 1 .
参考图9、图10所示，虚线箭头为第一过孔31和第二过孔32之间产生的面内杂散场S的方向，实线箭头为向SOT提供层1中提供的电流I方向。参考图9所示，如果SOT提供层1中的电流I的方向与第一过孔31和第二过孔32之间产生的面内杂散场S的方向同向平行时(参考图9)，自由层21的磁化方向向上(与参考层21的磁化方向相反)， 此时自旋轨道矩磁存储器呈现低电阻(例如可以为“0”态)；那么，参考图10所示，当改变SOT提供层1中的电流I的方向时，SOT提供层1中的电流I的方向与第一过孔31和第二过孔32之间产生的面内杂散场S的方向反向平行时，自由层21的磁化方向向下(与参考层21的磁化方向相同)，此时自旋轨道矩磁存储器呈现高电阻(“1”态)。Referring to FIG. 9 and FIG. 10 , the dashed arrow is the direction of the in-plane stray field S generated between the first via hole 31 and the second via hole 32 , and the solid line arrow is the direction of the current I supplied to the SOT supply layer 1 . . Referring to FIG. 9 , if the direction of the current I in the SOT supply layer 1 is parallel to the direction of the in-plane stray field S generated between the first via hole 31 and the second via hole 32 (refer to FIG. 9 ), The magnetization direction of the free layer 21 is upward (opposite to the magnetization direction of the reference layer 21), and the spin-orbit moment magnetic memory exhibits low resistance (for example, it can be in a "0" state); then, as shown in FIG. 10, when the SOT is changed When the direction of the current I in the layer 1 is provided, the direction of the current I in the SOT providing the layer 1 is antiparallel to the direction of the in-plane stray field S generated between the first via 31 and the second via 32, free The magnetization direction of the layer 21 is downward (same as the magnetization direction of the reference layer 21 ), and the spin-orbit magnetic memory exhibits a high resistance ("1" state) at this time.
如图11所示，该自旋轨道矩磁存储器中还可以包括写电路模块4，该写电路模块4包括第一端C1和第二端C2。其中，写电路模块4的第一端41与第一过孔31电连接，写电路模块4的第二端42与第二过孔32电连接，该写电路模块4用于有选择的向第一端41和第二端42输入电信号，以通过第一过孔31和第二过孔32向SOT提供层1提供所需要的电流信号，从而满足存储器对“0”态、“1”态的存储需求。As shown in FIG. 11 , the spin-orbit torque magnetic memory may further include a writing circuit module 4 , and the writing circuit module 4 includes a first end C1 and a second end C2 . The first end 41 of the writing circuit module 4 is electrically connected to the first via hole 31 , and the second end 42 of the writing circuit module 4 is electrically connected to the second via hole 32 . One end 41 and the second end 42 input electrical signals to provide the required current signal to the SOT providing layer 1 through the first via hole 31 and the second via hole 32, so as to satisfy the memory pair "0" state, "1" state storage requirements.
另外，为了保证第一过孔31和第二过孔32之间产生的面内杂散场的强度，在一些可能实现的方式中，可以设置第一过孔31高度和孔径的比值大于或等于1，第二过孔32的高度和孔径的比值大于或等于1。In addition, in order to ensure the strength of the in-plane stray field generated between the first via hole 31 and the second via hole 32, in some possible implementation manners, the ratio of the height of the first via hole 31 to the diameter of the hole can be set to be greater than or equal to 1 , the ratio of the height to the diameter of the second via hole 32 is greater than or equal to 1.
当然，第一过孔31高度和孔径的比值与第二过孔32的高度和孔径的比值可以相同，也可以不同，本申请对此不做具体限制；示意的，在一些可能实现的方式中，第一过孔31与第二过孔32的高度相同，孔径相同；也即第一过孔31高度和孔径的比值与第二过孔32的高度和孔径的比值相同。Of course, the ratio of the height to the diameter of the first via hole 31 and the ratio of the height to the diameter of the second via hole 32 may be the same or different, which is not specifically limited in this application; illustratively, in some possible implementations , the heights of the first vias 31 and the second vias 32 are the same, and the apertures are the same;
另外，可以理解的是，第一过孔31和第二过孔32之间产生的面内杂散场的强度是可以通过调整第一过孔31和第二过孔32之间的距离进行控制的；在此基础上，基于公式
Figure PCTCN2020127534-appb-000001
式中J th为临界翻转电流密度，e为电子常量，t F为自由层厚度，μ 0为磁导率，M S为饱和磁化强度，
Figure PCTCN2020127534-appb-000002
为普朗克常量，θ SH为自旋霍尔角，H K,eff为有效各向异性场，H x为面内杂散场。由此可知，在一定范围内，通过提高第一过孔31和第二过孔32之间产生的面内杂散场的强度(H x)，能够降低SOT提供层1的临界翻转电流(J th)，也即采用本申请实施例提供的自旋轨道矩磁存储器能够通过调整第一过孔31和第二过孔32之间产生的面内杂散场的强度实现低功耗的确定性翻转。 In addition, it can be understood that the intensity of the in-plane stray field generated between the first via hole 31 and the second via hole 32 can be controlled by adjusting the distance between the first via hole 31 and the second via hole 32 ; on this basis, based on the formula
Figure PCTCN2020127534-appb-000001
where J th is the critical switching current density, e is the electronic constant, t F is the thickness of the free layer, μ 0 is the magnetic permeability, M S is the saturation magnetization,
Figure PCTCN2020127534-appb-000002
is Planck's constant, θ SH is the spin Hall angle, H K,eff is the effective anisotropy field, and H x is the in-plane stray field. It can be seen from this that within a certain range, by increasing the intensity (H x ) of the in-plane stray field generated between the first via hole 31 and the second via hole 32 , the critical switching current (J th ) of the SOT supply layer 1 can be reduced ), that is, the spin-orbit moment magnetic memory provided by the embodiment of the present application can realize deterministic flip with low power consumption by adjusting the intensity of the in-plane stray field generated between the first via hole 31 and the second via hole 32 .
综上所述，本申请实施例提供的自旋轨道矩磁存储器，通过在位于SOT提供层表面的绝缘介质层中设置填充有铁磁材料的一组过孔(第一过孔和第二过孔)，第一过孔和第二过孔能够产生杂散场，并且该杂散场在位于SOT提供层与自由层之间的界面部分(即面内杂散场)的方向与向SOT提供层施加的电流平行时，该面内杂散场能够与SOT提供层产生的自旋流相互作用产生向上或向下的力矩，从而满足自由层的磁化翻转需求；也即本申请实施例提供的自旋轨道矩磁存储器无需外部磁场即可完成对自由层的磁化翻转，进而能够减小自旋轨道矩磁存储器的体积。To sum up, in the spin-orbit moment magnetic memory provided by the embodiments of the present application, a group of via holes (the first via hole and the second via hole) filled with ferromagnetic material are arranged in the insulating medium layer on the surface of the SOT providing layer. hole), the first via and the second via can generate a stray field, and the stray field is in the direction of the interface portion (ie, the in-plane stray field) located between the SOT supply layer and the free layer and the direction of the in-plane stray field applied to the SOT supply layer. When the current is parallel, the in-plane stray field can interact with the spin current generated by the SOT supply layer to generate an upward or downward torque, so as to meet the magnetization reversal requirement of the free layer; that is, the spin-orbit torque provided by the embodiment of the present application. The magnetic memory can complete the magnetization reversal of the free layer without an external magnetic field, thereby reducing the volume of the spin-orbit torque magnetic memory.
本申请中对于垂直磁性隧道结2的形状不做限制，实际中可以根据需求进行设置。The shape of the vertical magnetic tunnel junction 2 is not limited in this application, and can be set as required in practice.
例如，在一些可能实现的方式中，如图12所示(局部示意图)，该垂直磁性隧道结2的横截面(也即垂直厚度方向的平面)为矩形；也即垂直磁性隧道结2从上到下的任意位置的横截面均为矩形；当然，不同位置的矩形横截面的大小可以相同，也可以不同。For example, in some possible implementations, as shown in FIG. 12 (partial schematic diagram), the cross section of the vertical magnetic tunnel junction 2 (that is, the plane perpendicular to the thickness direction) is a rectangle; that is, the vertical magnetic tunnel junction 2 is viewed from above The cross-section at any position down to the bottom is a rectangle; of course, the size of the rectangular cross-section at different positions can be the same or different.
又例如，在一些可能实现的方式中，如图1所示，该垂直磁性隧道结2的横截面(也即垂直厚度方向的平面)为圆形；也即垂直磁性隧道结2从上到下的任意位置的横截面均为圆形；当然，不同位置的圆形横截面的大小可以相同，也可以不同。For another example, in some possible implementations, as shown in FIG. 1 , the cross section of the vertical magnetic tunnel junction 2 (that is, the plane perpendicular to the thickness direction) is circular; that is, the vertical magnetic tunnel junction 2 goes from top to bottom. The cross-sections at any positions are circular; of course, the sizes of the circular cross-sections at different positions can be the same or different.
需要说明的是，对于自旋轨道矩磁存储器而言，其在包括前述所提及的结构(如1、2、3、4)的基础上，还可以包括其他的结构(如电极、晶体管等)，本申请对此不做限制，实际中根据需要进行设置即可。It should be noted that for the spin-orbit magnetic memory, in addition to the aforementioned structures (such as 1, 2, 3, and 4), other structures (such as electrodes, transistors, etc.) may also be included. ), which is not limited in this application, and can be set as needed in practice.
示意的，参考图13所示，以下以一个存储单元中设置有一个自旋轨道矩磁存储器，且该自旋轨道矩磁存储器采用图1中示出的存储器结构为例，以下对自旋轨道矩磁存储器的读写过程进行示意说明。Schematically, referring to FIG. 13 , in the following, a spin-orbit moment magnetic memory is provided in a storage unit, and the spin-orbit moment magnetic memory adopts the memory structure shown in FIG. 1 as an example. The read and write process of the moment magnetic memory is schematically explained.
如图13所示，该存储单元中在设置自旋轨道矩磁存储器的基础上，还设置有两个晶体管(例如NMOS)T1、T2。晶体管T1的栅极与读取字线RWL(read word line)连接，晶体管T1的源极与位线BL(bit line)连接，晶体管T1的漏极与参考层23连接；晶体管T2的栅极与写字线WWL(write word line)连接，晶体管T2的源极与位线BL连接，晶体管T2的漏极通过第一过孔31(图13中未示出，可结合图13和图2)与SOT提供层1连接，SOT提供层1通过第二过孔32(图13中未示出，可结合图13和图2)与源线SL(source line)连接。As shown in FIG. 13 , in addition to the spin-orbit torque magnetic memory, two transistors (eg, NMOS) T1 and T2 are also provided in the memory unit. The gate of the transistor T1 is connected to the read word line RWL (read word line), the source of the transistor T1 is connected to the bit line BL (bit line), the drain of the transistor T1 is connected to the reference layer 23; the gate of the transistor T2 is connected to The write word line WWL (write word line) is connected, the source of the transistor T2 is connected to the bit line BL, and the drain of the transistor T2 is connected to the SOT through the first via hole 31 (not shown in FIG. 13 , which can be combined with FIG. 13 and FIG. 2 ). Layer 1 is provided for connection, and the SOT provides layer 1 is connected to the source line SL (source line) through a second via hole 32 (not shown in FIG. 13 , which can be combined with FIG. 13 and FIG. 2 ).
参考图13所示，在对存储单元进行读取操作时，通过读取字线RWL向晶体管T1的栅极输入高电平电压，晶体管T1导通，同时向位线BL施加高电平电压，如此读取电流Ir从位线BL流经晶体管T1和自旋轨道矩磁存储器至源线SL；然后可以将通过源线SL获取的读取电流Ir与基准参考电流进行比较来判断存储器中的数据信息(“0”或“1”)。Referring to FIG. 13 , when a memory cell is read, a high-level voltage is input to the gate of the transistor T1 through the read word line RWL, the transistor T1 is turned on, and a high-level voltage is applied to the bit line BL at the same time, In this way, the read current Ir flows from the bit line BL through the transistor T1 and the spin-orbit magnetic memory to the source line SL; then the read current Ir obtained through the source line SL can be compared with the reference current to determine the data in the memory information ("0" or "1").
参考图13所示，在对存储单元进行写操作时，通过字线WL向晶体管T2的栅极输入高电平电压，晶体管T2导通，同时根据需要写入的数据分别向位线BL和源线SL施加高电平电压或低电平电压；例如，在写入数据“0”时，向源线SL施加高电平电压，向位线BL施加低电平电压，从而写入电流I w从源线SL经自旋轨道矩磁存储器和晶体管T2至位线BL；相反，在写入数据“1”时，向源线SL施加低电平电压，向位线BL施加高电平电压，从而写入电流I w从源线SL经晶体管T2和自旋轨道矩磁存储器至源线SL。 Referring to FIG. 13 , when the memory cell is written, a high-level voltage is input to the gate of the transistor T2 through the word line WL, and the transistor T2 is turned on. A high-level voltage or a low-level voltage is applied to the line SL; for example, when writing data "0", a high-level voltage is applied to the source line SL, and a low-level voltage is applied to the bit line BL, thereby writing the current Iw From the source line SL via the spin-orbit magnetic memory and the transistor T2 to the bit line BL; on the contrary, when writing data "1", a low-level voltage is applied to the source line SL, and a high-level voltage is applied to the bit line BL, Thus, the write current Iw goes from the source line SL to the source line SL via the transistor T2 and the spin-orbit torque magnetic memory.
另外，本申请实施例还提供一种自旋轨道矩磁存储器的制作方法，如图14所示，该制作方法包括：In addition, an embodiment of the present application also provides a method for fabricating a spin-orbit moment magnetic memory, as shown in FIG. 14 , the fabrication method includes:
步骤01、参考图15中(a)所示，形成设置有第一过孔31和第二过孔32的绝缘介质层3；其中，第一过孔31和第二过孔32中填充铁磁材料。 Step 01. Referring to FIG. 15 (a), an insulating dielectric layer 3 provided with a first via hole 31 and a second via hole 32 is formed; wherein the first via hole 31 and the second via hole 32 are filled with ferromagnetic Material.
示意的，在一些可能实现的方式中，上述步骤01可以包括：采用二氧化硅(SiO 2)形成SiO 2层，通过刻蚀工艺在SiO 2层中形成第一过孔31和第二过孔32，然后可以采用填孔工艺，在第一过孔31和第二过孔32中填充Co材料，形成钴过孔(Co via)，从而完成上述绝缘介质层3的制作。 Illustratively, in some possible implementation manners, the above step 01 may include: using silicon dioxide (SiO 2 ) to form a SiO 2 layer, and forming a first via hole 31 and a second via hole in the SiO 2 layer by an etching process 32. Then, the first via hole 31 and the second via hole 32 may be filled with a Co material by a hole filling process to form a Co via hole, so as to complete the above-mentioned fabrication of the insulating dielectric layer 3.
步骤02、参考图15中(b)所示，在绝缘介质层3的表面形成覆盖第一过孔31和第二过孔32的SOT提供层3。 Step 02 , as shown in FIG. 15( b ), an SOT providing layer 3 covering the first via hole 31 and the second via hole 32 is formed on the surface of the insulating dielectric layer 3 .
示意的，在一些可能实现的方式中，可以采用钨(W)在绝缘介质层3的表面形成SOT提供层3，且该SOT提供层1覆盖第一过孔31和第二过孔32，以使得SOT提供层1与第一过孔31、第二过孔32中填充铁磁材料电连接。Illustratively, in some possible implementations, tungsten (W) may be used to form the SOT providing layer 3 on the surface of the insulating dielectric layer 3, and the SOT providing layer 1 covers the first via hole 31 and the second via hole 32, so as to The SOT providing layer 1 is electrically connected with the ferromagnetic material filled in the first via hole 31 and the second via hole 32 .
步骤03、参考图15中(c)所示，在SOT提供层1的表面、对应第一过孔31和第二过孔32之间的区域形成垂直磁性隧道结2。当然，需要说明的是，上述制作方法仅是示意的以依次形成绝缘介质层3、SOT提供层1、垂直磁性隧道结2；在一些可能实现的方 式中，也可以依次制作垂直磁性隧道结2、SOT提供层1、绝缘介质层3；具体制作方式，可以对应参考上述的制作方法，也可以结合相关技术进行适当的调整进行制作，此处不再赘述。 Step 03 , as shown in FIG. 15( c ), a vertical magnetic tunnel junction 2 is formed on the surface of the SOT providing layer 1 corresponding to the region between the first via hole 31 and the second via hole 32 . Of course, it should be noted that the above-mentioned fabrication method is only illustrative to form the insulating dielectric layer 3, the SOT providing layer 1, and the vertical magnetic tunnel junction 2 in sequence; in some possible implementations, the vertical magnetic tunnel junction 2 may also be fabricated in sequence. , SOT providing layer 1, insulating dielectric layer 3; the specific manufacturing method can be made by referring to the above-mentioned manufacturing method, or by making appropriate adjustments in combination with related technologies, which will not be repeated here.
关于前述自旋轨道矩磁存储器实施例中的相关结构，如图5中示出的自旋轨道矩磁存储器，可以对应参考上述自旋轨道矩磁存储器的制作方法实施例对应制作，也可以结合相关技术进行适当的调整进行制作，本申请对此不做限制。Regarding the related structures in the foregoing embodiments of the spin-orbit moment magnetic memory, the spin-orbit moment magnetic memory shown in FIG. 5 can be produced correspondingly with reference to the above-mentioned embodiment of the method for producing a spin-orbit moment magnetic memory, or it can be produced in combination with The relevant technology is appropriately adjusted for production, which is not limited in this application.
关于上述自旋轨道矩磁存储器的制作方法实施例中其他相关的内容，如垂直磁性隧道结2的结构、形状，第一过孔31和第二过孔32的尺寸等，可以对应参考前述自旋轨道矩磁存储器实施例中对应的部分，此处不再赘述。For other related contents in the above-mentioned embodiment of the manufacturing method of the spin-orbit moment magnetic memory, such as the structure and shape of the vertical magnetic tunnel junction 2, the size of the first via 31 and the second via 32, etc., you can refer to the aforementioned self- The corresponding parts in the embodiments of the gyromagnetic memory are not repeated here.
采用本申请实施例提供的制作方法制作的自旋轨道矩磁存储器，通过第一过孔和第二过孔能够产生杂散场，并且该杂散场在位于SOT提供层与自由层之间的界面部分(即面内杂散场)的方向与向SOT提供层施加的电流平行时，该面内杂散场能够与SOT提供层产生的自旋流相互作用产生向上或向下的力矩，从而满足自由层的磁化翻转需求；也即本申请实施例提供的自旋轨道矩磁存储器无需外部磁场即可完成对自由层的磁化翻转，进而能够减小自旋轨道矩磁存储器的体积。For the spin-orbit moment magnetic memory fabricated by the fabrication method provided in the embodiment of the present application, a stray field can be generated through the first via hole and the second via hole, and the stray field is located at the interface portion between the SOT supply layer and the free layer. When the direction of the in-plane stray field (that is, the in-plane stray field) is parallel to the current applied to the SOT supply layer, the in-plane stray field can interact with the spin current generated by the SOT supply layer to generate an upward or downward moment, so as to satisfy the requirement of the free layer. The magnetization inversion requirement; that is, the spin-orbit torque magnetic memory provided by the embodiment of the present application can complete the magnetization inversion of the free layer without an external magnetic field, thereby reducing the volume of the spin-orbit torque magnetic memory.
以上所述，仅为本申请的具体实施方式，但本申请的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本申请的保护范围之内。因此，本申请的保护范围应以所述权利要求的保护范围为准。The above are only specific embodiments of the present application, but the protection scope of the present application is not limited to this. should be covered within the scope of protection of this application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims (10)

  1. 一种自旋轨道矩磁存储器，其特征在于，包括自旋轨道矩提供层和垂直磁性隧道结；A spin-orbit moment magnetic memory, comprising a spin-orbit moment providing layer and a vertical magnetic tunnel junction;
    所述磁性隧道结包括层叠设置的自由层、遂穿层和参考层；The magnetic tunnel junction includes a stacked free layer, a tunneling layer and a reference layer;
    所述自旋轨道矩提供层包括相对的第一表面和第二表面；the spin-orbit moment providing layer includes opposing first and second surfaces;
    所述自由层设置在所述第一表面上；the free layer is disposed on the first surface;
    所述自旋轨道矩磁存储器还包括设置在所述第一表面或所述第二表面上的绝缘介质层，所述绝缘介质层中在位于所述垂直磁性隧道结相对的两侧区域设置有第一过孔和第二过孔，且所述第一个过孔和所述第二过孔中填充有铁磁材料。The spin-orbit-torque magnetic memory further includes an insulating medium layer disposed on the first surface or the second surface, wherein the insulating medium layer is disposed on two opposite sides of the vertical magnetic tunnel junction. The first via hole and the second via hole are filled with ferromagnetic material.
  2. 根据权利要求1所述的自旋轨道矩磁存储器，其特征在于，The spin-orbit moment magnetic memory according to claim 1, wherein,
    所述第一过孔和所述第二过孔靠近所述自旋轨道矩提供层一侧的端部与所述自旋轨道矩提供层电连接；The ends of the first via hole and the second via hole near the spin-orbit moment-providing layer are electrically connected to the spin-orbit moment-providing layer;
    所述第一过孔与所述自旋轨道矩提供层的电连接点和所述第一过孔位于所述垂直磁性隧道结的同侧区域，所述第二过孔与所述自旋轨道矩提供层的电连接点和所述第二过孔位于所述垂直磁性隧道结的同侧区域。The electrical connection point of the first via hole and the spin-orbit moment providing layer and the first via hole are located in the same side region of the vertical magnetic tunnel junction, and the second via hole and the spin-orbit The electrical connection point of the moment providing layer and the second via hole are located in the same side region of the vertical magnetic tunnel junction.
  3. 根据权利要求1或2所述的自旋轨道矩磁存储器，其特征在于，The spin-orbit moment magnetic memory according to claim 1 or 2, wherein,
    所述第一过孔、所述第二过孔与所述自旋轨道矩提供层的表面直接连接。The first via hole and the second via hole are directly connected to the surface of the spin-orbit moment providing layer.
  4. 根据权利要求1或2所述的自旋轨道矩磁存储器，其特征在于，The spin-orbit moment magnetic memory according to claim 1 or 2, wherein,
    所述第一过孔、所述第二过孔通过金属走线与所述自旋轨道矩提供层连接。The first via hole and the second via hole are connected to the spin-orbit moment providing layer through metal traces.
  5. 根据权利要求2-4任一项所述的自旋轨道矩磁存储器，其特征在于，The spin-orbit moment magnetic memory according to any one of claims 2-4, wherein,
    所述自旋轨道矩磁存储器还包括写电路模块，所述写电路模块包括第一端和第二端；The spin-orbit torque magnetic memory further includes a writing circuit module, the writing circuit module includes a first end and a second end;
    所述第一端与所述第一过孔电连接，所述第二端与所述第二过孔电连接，所述写电路模块用于有选择的向所述第一端和所述第二端输入电信号。The first end is electrically connected to the first via hole, the second end is electrically connected to the second via hole, and the writing circuit module is used for selectively sending the first end and the first end to the second via hole. Two-terminal input electrical signal.
  6. 根据权利要求1-5任一项所述的自旋轨道矩磁存储器，其特征在于，所述第一过孔和所述第二过孔中填充的铁磁材料包括钴。The spin-orbit moment magnetic memory according to any one of claims 1-5, wherein the ferromagnetic material filled in the first via hole and the second via hole includes cobalt.
  7. 根据权利要求1-6任一项所述的自旋轨道矩磁存储器，其特征在于，所述第一过孔、所述第二过孔的高度和孔径的比值大于或等于1。The spin-orbit moment magnetic memory according to any one of claims 1-6, wherein the ratio of the height of the first via hole and the second via hole to the aperture diameter is greater than or equal to 1.
  8. 根据权利要求1-7任一项所述的自旋轨道矩磁存储器，其特征在于，所述垂直磁性隧道结的横截面为圆形。The spin-orbit moment magnetic memory according to any one of claims 1-7, wherein the vertical magnetic tunnel junction has a circular cross section.
  9. 一种存储设备，其特征在于，包括如权利要求1-8任一项所述的自旋轨道矩磁存储器。A storage device, comprising the spin-orbit moment magnetic memory according to any one of claims 1-8.
  10. 一种自旋轨道矩磁存储器的制作方法，其特征在于，包括：A method of making a spin-orbit moment magnetic memory, comprising:
    形成设置有第一过孔和第二过孔的绝缘介质层；其中，所述第一过孔和所述第二过孔中填充铁磁材料；forming an insulating medium layer provided with a first via hole and a second via hole; wherein the first via hole and the second via hole are filled with ferromagnetic material;
    在所述绝缘介质层的表面形成覆盖所述第一过孔和所述第二过孔的自旋轨道矩提供层；forming a spin-orbit moment providing layer covering the first via hole and the second via hole on the surface of the insulating medium layer;
    在所述自旋轨道矩提供层的表面、对应所述第一过孔和所述第二过孔之间的区域形成垂直磁性隧道结。A vertical magnetic tunnel junction is formed on a surface of the spin-orbit moment providing layer corresponding to a region between the first via hole and the second via hole.
PCT/CN2020/127534 2020-11-09 2020-11-09 Spin orbit torque magnetic random access memory, manufacturing method therefor, and memory device WO2022095033A1 (en)

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