WO2022059202A1 - 検査システム - Google Patents
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- WO2022059202A1 WO2022059202A1 PCT/JP2020/035615 JP2020035615W WO2022059202A1 WO 2022059202 A1 WO2022059202 A1 WO 2022059202A1 JP 2020035615 W JP2020035615 W JP 2020035615W WO 2022059202 A1 WO2022059202 A1 WO 2022059202A1
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- inspection
- irradiation
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- 238000007689 inspection Methods 0.000 title claims abstract description 192
- 230000009471 action Effects 0.000 claims abstract description 75
- 238000010894 electron beam technology Methods 0.000 claims abstract description 55
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Images
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
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- H01J37/22—Optical or photographic arrangements associated with the tube
- H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H01J37/244—Detectors; Associated components or circuits therefor
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/261—Details
- H01J37/263—Contrast, resolution or power of penetration
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Definitions
- This disclosure relates to the inspection system.
- SEMs that can perform non-contact measurement and have high spatial resolution are widely used for in-line dimensional measurement.
- contact probe measurement is common for measuring electrical characteristics
- optical measurement is common for measuring material properties. Since each measurement method has different measurement characteristics such as contact or non-contact and different spatial resolution, local correlation (for example, correlation of dimensions, electrical properties, and material properties at the same location) is analyzed. That is difficult. Further, since each measurement method has different applicable steps, it is difficult to trace the characteristic change between different steps.
- Patent Document 1 An example of a method for performing non-contact analysis on a plurality of characteristics with the same device is disclosed in Patent Document 1.
- the technique of Patent Document 1 has a plurality of energy sources such as light, electrons, ions, and X-rays, and a plurality of detector systems for each of the plurality of energy sources, and the plurality of energy sources and the detector system are used. CD and overlay are measured from the obtained electrical and material properties.
- Patent Document 1 is a non-contact measurement method, it is extremely difficult to analyze the correlation of a plurality of characteristics at the same location because the spatial resolution differs depending on each energy source.
- the present disclosure has been made to solve such a problem, and an object of the present disclosure is to provide an inspection system that facilitates correlation analysis of a plurality of characteristics at the same location.
- An example of the inspection system is An inspection beam irradiation system that irradiates a sample with an inspection beam that is a charged particle beam, A detector that detects secondary charged particles obtained by irradiating the sample with the inspection beam and outputs a detection signal.
- a first action beam irradiation system that irradiates a first action beam that changes the amount of the secondary charged particles, and a first action beam irradiation system.
- a second action beam irradiation system that irradiates a second action beam that changes the amount of the secondary charged particles, and a second action beam irradiation system.
- a computer system that generates an image of the sample based on the detection signal Equipped with The computer system is A first inspection image related to the irradiation of the inspection beam is generated, and the first inspection image is generated. Based on the first inspection image, the first feature amount relating to the pattern on the sample is acquired, and the first feature amount is obtained. A second inspection image relating to the irradiation of the first action beam and the inspection beam was generated. Based on the second inspection image, the second feature amount related to the pattern is acquired, and the second feature amount is acquired. A third inspection image relating to the irradiation of the second action beam and the inspection beam was generated. Based on the third inspection image, a third feature amount related to the pattern is acquired.
- the inspection system it becomes easier to analyze the correlation of a plurality of characteristics at the same location.
- the figure which shows the state which uses the 1st action beam in the principle of this disclosure The figure which shows the example of the structure of a sample. The figure which shows the example of the relationship between the wavelength of an action laser and the amount of secondary electrons detected. The figure which shows the state which uses the 2nd action beam. The figure which shows the example of the relationship between the irradiation amount of the action electron beam and the detection amount of secondary electrons. The figure which shows the example of the relationship between an electric property and a material.
- FIG. 1 The figure which shows the specific example of the sample measured by the inspection system which concerns on Embodiment 1.
- FIG. The figure which shows the specific example of the inspection image generated by the inspection system which concerns on Embodiment 1.
- the flowchart which shows the operation example of the inspection system which concerns on Embodiment 1.
- FIG. The figure which shows the example of the UI screen which is output in relation to the processing of FIG.
- the inspection system utilizes an inspection beam (for example, an electron beam) and a plurality of action beams.
- the action beam changes (ie, increases or decreases) the amount of secondary electrons obtained by irradiation of the inspection beam.
- FIG. 1 shows a state in which the first action beam is used.
- the laser B2 is irradiated to the irradiation region 300 as the first action beam.
- a sample 200 is arranged in the irradiation region 300, and the laser B2 irradiates the sample 200.
- the inspection beam B1 is irradiated to the sample 200 during or after the irradiation of the laser B2.
- the secondary electrons B4 emitted from the sample 200 by this are detected by the detector 105.
- FIG. 2 shows an example of the structure of the sample 200. Patterns P1 to P3 are formed on the sample 200 as a physical structure.
- the material characteristics of the sample 200 for example, the absorption coefficient of light
- the amount of secondary electrons B4 emitted increases or decreases. Since the amount of change in the secondary electrons B4 depends on the wavelength of light, the material properties of the sample 200 can be specified based on this dependence.
- FIG. 3 shows an example of the relationship between the wavelength of the working laser and the amount of secondary electrons detected.
- the amount of secondary electrons detected corresponds to the material properties (in this example, the light absorption coefficient). Since the amount of secondary electrons detected changes according to the wavelength of the laser, the material properties can be measured based on the state of this change. For example, by comparing the measurement results as shown in FIG. 3 with the data measured for various materials, the pattern P1 is formed of SiO, the pattern P2 is formed of SiON, and the pattern P3 is formed of SiN. It can be identified that there is.
- FIG. 4 shows a state in which the second action beam is used.
- the sample 200 is irradiated with the electron beam B3 as the second action beam.
- the inspection beam B1 is irradiated to the sample 200 during or after the irradiation of the electron beam B3.
- the secondary electrons B4 emitted from the sample 200 by this are detected by the detector 105.
- the surface potential of the sample 200 changes according to the electrical characteristics of the material of the sample 200, and the amount of secondary electrons B4 emitted increases or decreases. Since the amount of change in the secondary electron B4 depends on the electrical characteristics, the electrical characteristics of the sample 200 can be specified based on this dependence.
- FIG. 5 shows an example of the relationship between the irradiation amount (for example, electric charge) of the acting electron beam and the detected amount of secondary electrons.
- the amount of secondary electrons detected corresponds to the electrical characteristics (in this example, the surface potential at the time of measurement). Since the amount of secondary electrons detected changes according to the irradiation amount of the electron beam, the electrical characteristics can be measured based on the state of this change. For example, it can be specified that the pattern P1 has a large capacitance and a medium resistance, the pattern P2 has a medium capacitance and a small resistance, and the pattern P3 has a small capacitance and a large resistance.
- FIG. 6 shows an example of the relationship between electrical properties and materials. Based on the electrical characteristics described with respect to FIG. 5, for example, it can be specified that the pattern P1 is formed of SiO, the pattern P2 is formed of SiON, and the pattern P3 is formed of SiN.
- FIG. 7 shows the configuration of the inspection system 100 according to the first embodiment.
- the inspection system 100 includes a housing 101, an electron source 102, a deflector 103, an objective lens 104, a detector 105, an electron gun 106, a laser device 107, a window 108, and an inspection beam control system 120. , A working beam control system 130 and a computer system 140.
- the electron source 102 functions as an inspection beam irradiation system and irradiates the sample 200 with an inspection beam, which is a charged particle beam.
- the deflector 103 and the objective lens 104 deflect the inspection beam and irradiate the sample 200 at a desired position.
- secondary charged particles electrons in this embodiment, hereinafter referred to as "secondary electrons”
- the detector 105 detects secondary electrons and outputs a detection signal.
- the laser device 107 functions as a first action beam irradiation system and irradiates the sample 200 with the first action beam.
- the first working beam is a laser, which may be hereinafter referred to as a “working laser”.
- the action laser changes the amount of secondary electrons.
- the electron gun 106 functions as a second action beam irradiation system and irradiates the sample 200 with the second action beam.
- the second acting beam is an electron beam, which may be hereinafter referred to as an “acting electron beam”.
- the working electron beam changes the amount of secondary electrons.
- the inspection beam control system 120 operates based on an instruction from the computer system 140.
- the inspection beam control system 120 controls the electron source 102, the deflector 103, and the objective lens 104 to irradiate the inspection beam.
- the inspection beam control system 120 includes a signal processing unit 121.
- the signal processing unit 121 receives the detection signal from the detector 105, converts the format, and transmits the detection signal to the computer system 140.
- the action beam control system 130 operates based on an instruction from the computer system 140.
- the action beam control system 130 includes a laser control unit 131 and an electron gun control unit 132.
- the laser control unit 131 controls the laser device 107 to irradiate the working laser.
- the electron gun control unit 132 controls the electron gun 106 to irradiate the working electron beam.
- the window 108 transmits at least a portion (preferably substantially the entire amount) of the working laser.
- FIG. 8 shows the configuration of the computer system 140.
- the computer system 140 can be configured to include a known computer and includes, for example, arithmetic and storage means.
- the arithmetic means includes, for example, a processor
- the storage means includes a storage medium such as a semiconductor memory device and a magnetic disk device. Part or all of the storage medium may be a non-transitory storage medium.
- the storage means may store the program. By executing this program by the processor, the computer system 140 may execute the function described in this embodiment.
- the computer system 140 includes a feature amount analysis system 150 and an operation / output system 160.
- the feature quantity analysis system 150 includes a correlation analysis unit 151, a dimensional analysis unit 152, a material characteristic analysis unit 153, and an electrical characteristic analysis unit 154.
- the operation / output system 160 includes an input unit 161 and an output unit 162.
- the input unit 161 includes an input device such as a keyboard and a mouse. Further, the output unit 162 includes an output device such as a display and a printer. The input unit 161 and the output unit 162 may be provided with communication means such as a network interface.
- FIG. 9 shows the irradiation timing of each beam by the inspection system 100.
- FIG. 9A shows the irradiation timing when measuring the dimensions based on the first inspection image. Only the inspection beam is irradiated, the working electron beam and the working laser are not. The detector operates while the inspection beam is being irradiated. The operating time of the detector may be shorter than the irradiation time of the inspection beam.
- FIG. 9B shows the irradiation timing when measuring the material properties based on the second inspection image.
- the inspection beam and the working laser are irradiated, and the working electron beam is not.
- the detector operates while the inspection beam and the working laser are being irradiated.
- the operating time of the detector may be shorter than the irradiation time of the inspection beam.
- FIG. 9 (c) shows the irradiation timing when measuring the electrical characteristics based on the third inspection image.
- the inspection beam and the working electron beam are irradiated, and the working laser is not. Further, the working electron beam and the inspection beam are irradiated so that the irradiation timings do not overlap.
- the detector operates only while the inspection beam is irradiated and does not operate while the working electron beam is irradiated.
- FIG. 10 shows a specific example of the sample 200 measured by the inspection system 100.
- the sample 200 includes an interlayer film 201, a gate film 202, and a plug 203.
- FIG. 11 shows a specific example of the inspection image generated by the inspection system 100.
- This example corresponds to the structure of FIG.
- Image I1 of FIG. 11A is an example of a first inspection image used for dimension measurement.
- Image I1 is an inspection image related to irradiation of the inspection beam.
- the computer system 140 (for example, the dimensional analysis unit 152) irradiates the inspection beam to generate the image I1, and based on the image I1, a first feature amount (in this example, the diameter of each plug 203) with respect to the pattern on the sample 200. ).
- Image I2 in FIG. 11B is an example of a second inspection image used for measuring material properties.
- Image I2 is an inspection image relating to irradiation of the working laser and the inspection beam.
- the computer system 140 (for example, the material property analysis unit 153) irradiates an action laser and an inspection beam to generate an image I2, and based on the image I2, a second feature amount related to the pattern (in this example, the film of each plug 203). Thick) to get.
- the amount of secondary electrons changes due to the irradiation of the working laser, the image I2 becomes an image different from the image I1, and the film thickness of each plug 203, which is difficult to measure only by the image I1, can be measured.
- Image I3 in FIG. 11C is an example of a third inspection image used for measuring electrical characteristics.
- Image I3 is an inspection image relating to irradiation of the working electron beam and the inspection beam.
- a computer system 140 eg, electrical characteristic analysis unit 1544 irradiates an action electron beam and an inspection beam to generate an image I3, and based on the image I3, a third feature quantity relating to the pattern (in this example, each plug 203). Capacitance) is acquired.
- the amount of secondary electrons changes due to the irradiation of the working electron beam, the image I3 becomes an image different from the image I1, and the capacitance of each plug 203, which is difficult to measure only by the image I1, can be measured.
- a person skilled in the art can appropriately design a specific method for acquiring each feature amount based on the images I1 to I3.
- the diameter and film thickness of the plug 203 can be calculated using image processing techniques.
- the capacitance of the plug 203 can be calculated based on the amount of secondary electrons or the amount of change (the amount of change between the image I1 and the image I3).
- FIG. 12 shows an example of correlation analysis of a plurality of characteristics at the same location.
- each plug 203 can be identified based on the image I1.
- each plug 203 is identified by assigning an identifier (ID) of 1 to 10. Further, by aligning the three images I1 to I3 shown in FIG. 11, each characteristic can be associated with each plug 203 as shown in FIG. 12 (b).
- ID identifier
- FIG. 12B By using the information shown in FIG. 12B, it becomes easier to analyze the correlation of a plurality of characteristics at the same location.
- the plug 203 having an ID of 1 has a dimension of 0.124 ⁇ m, a capacitance of 27 fF, and a film thickness of 2.12 nm.
- FIG. 13 shows an example of a method for detecting a pattern defect based on a correlation analysis.
- the computer system 140 may generate and output the graph shown in FIG. FIG. 13A shows the correlation between the diameter of each plug and the capacitance.
- the double-headed arrow indicates the normal range. Two plugs are out of normal range. It can be considered that a lithography / etching abnormality has occurred in these plugs.
- FIG. 13B shows the correlation between the film thickness of each plug and the capacitance.
- the double-headed arrow indicates the normal range. Two plugs are out of normal range. It can be considered that a gate abnormality has occurred in these plugs.
- the computer system 140 has at least one of the first, second and third features (capacitance in the example of FIG. 13) and a predetermined threshold value (for example, the upper limit and the lower limit of the normal range). Based on, information representing a defect in the pattern can be obtained. In this way, defects can be detected automatically.
- FIG. 14 is a flowchart showing an operation example of the inspection system 100.
- the inspection system 100 starts the analysis (step S101).
- the computer system 140 controls the inspection beam control system 120 to move the irradiation position of the inspection beam to an appropriate position with respect to the sample 200 (step S102).
- the computer system 140 sets the feature amount to be acquired (step S103).
- FIG. 15 shows an example of a UI (user interface) screen for setting the feature amount to be acquired.
- the feature amount related to the dimensions appearing in the image I1 can be set.
- the feature amount related to the dimensions is shown as a "shape" in the example of FIG. 15, and one or more of the width, length, center of gravity, inner diameter, outer diameter, and the like of the pattern can be set. The user can arbitrarily specify these feature quantities.
- the feature amount related to the material properties can be set.
- the feature amount related to the material property is shown as "material" in the example of FIG. 15, and the information related to the film (for example, the type of the film, the thickness of the film, the composition of the film, etc.), the information related to the dopant, and the information related to the crystallinity are shown.
- Information about the carrier, outer diameter of the pattern, etc. can be set to one or more.
- the composition of the material and the RC time constant may be set as the second feature amount.
- the "film thickness" is a dimension that appears in image I2 (ie, a measurable length on the image) and / or a dimension that does not appear in image I2 (ie, the length in the depth direction with respect to the image).
- Information about a dopant includes, for example, one or more of dopant types, dopant concentrations, dopant depths, dopant region contours, and the like.
- Information about crystallinity includes information indicating whether it is amorphous or polymorphic.
- Information about carriers includes, for example, carrier mobility and / or carrier life.
- the material properties of the pattern in the sample can be measured, and the correlation analysis with other properties at the same location becomes easier.
- the feature amount related to the electrical characteristics can be set.
- the feature quantity related to the electrical characteristic is shown as "electricity" in the example of FIG. 15, and has capacitance, resistance (electric resistance), time constant (for example, RC time constant), diode characteristic (for example, VI characteristic), and the like. One or more of them can be set. Specific definitions of these values can be appropriately determined by those skilled in the art, and for example, the resistance can be a resistance between two appropriate points of each pattern.
- the electrical characteristics of the pattern in the sample can be measured, and the correlation analysis with other characteristics at the same location becomes easier.
- the computer system 140 sets the irradiation conditions of the inspection beam and each action beam (step S104).
- the UI of FIG. 15 is also used to set irradiation conditions. The user can arbitrarily specify the irradiation conditions.
- the irradiation conditions of the inspection beam include irradiation energy (for example, acceleration voltage), irradiation amount (for example, irradiation current and / or irradiation period), irradiation area (for example, a field of view determined according to the observation magnification), and scanning speed.
- Etc. include one or more.
- the inspection beam may be irradiated in a pulse shape, and in that case, the irradiation condition of the inspection beam may include a pulse width and / or an interval (described later in relation to FIG. 18 (b)).
- the irradiation conditions of the inspection beam are the case of irradiating only the inspection beam, the case of irradiating the inspection beam and the action laser (“material inspection”), and the case of irradiating the inspection beam and the action electron beam. (“Electrical inspection”) may be configured so that each can be set.
- the irradiation condition of the working laser is displayed at the bottom of the "material inspection" column.
- the irradiation condition of the working laser includes one or more of irradiation energy (for example, wavelength and average intensity), polarization (for example, S-polarization or P-polarization), and the like.
- the working laser can also be irradiated in a pulsed manner, in which case the irradiation conditions of the working laser may include a pulse width and / or a pulse period.
- the irradiation condition of the working electron beam is displayed at the lower part of the "electrical inspection" column.
- the irradiation conditions of the working electron beam include irradiation energy (for example, acceleration voltage) and / or irradiation amount (for example, irradiation current and irradiation period).
- the working electron beam can also be irradiated in a pulsed manner, in which case the irradiation conditions of the working electron beam may include a pulse width and / or a pulse period.
- the inspection beam, the first action beam (action laser), and the second action beam (action electron beam) can all be irradiated under different conditions. It is not necessary to irradiate all of these beams under different conditions, and at least one of the inspection beam, the first action beam and the second action beam is set to be different from the other two. If possible.
- “different” means the beam type (for example, visible light or light having a shorter wavelength, electromagnetic wave having a wavelength longer than visible light, charged particles, etc.), irradiation energy. It means that one or more of (energy or wavelength), irradiation period, irradiation area, etc. are different.
- the computer system 140 controls the inspection beam control system 120 to irradiate the inspection beam and acquire the image I1 (step S105). For example, the computer system 140 generates an image of the sample 200 based on the detection signal from the detector 105 (in this embodiment, the detection signal after processing by the signal processing unit 121).
- the computer system 140 acquires a first feature amount (for example, the diameter of the plug) regarding the pattern on the sample based on the image I1 (step S106, FIG. 11A). ..
- the computer system 140 controls the inspection beam control system 120 and the action beam control system 130 to irradiate the action laser and the inspection beam, and acquires the image I2 (step S107). For example, the computer system 140 generates an image of the sample 200 based on the detection signal from the detector 105 (in this embodiment, the detection signal after processing by the signal processing unit 121).
- the computer system 140 acquires a second feature amount (for example, the film thickness of the plug) regarding the pattern on the sample based on the image I2 (step S108, FIG. 11 (b). )).
- the computer system 140 may acquire a change in the amount of secondary electrons between the image I1 and the image I2, and may acquire a second feature amount based on this change.
- the computer system 140 controls the inspection beam control system 120 and the action beam control system 130 to irradiate the action electron beam and the inspection beam, and acquires the image I3 (step S109). For example, the computer system 140 generates an image of the sample 200 based on the detection signal from the detector 105 (in this embodiment, the detection signal after processing by the signal processing unit 121).
- the computer system 140 acquires a third feature amount (for example, capacitance) regarding the pattern on the sample based on the image I3 (step S110, FIG. 11 (c)).
- the computer system 140 may acquire a change in the amount of secondary electrons between the image I1 and the image I3, and may acquire a third feature amount based on this change.
- the computer system 140 analyzes the correlation of each characteristic at the same location (step S111, FIG. 12). Next, the computer system 140 outputs the result of the correlation analysis (step S112, FIG. 13).
- FIG. 16 shows an example of a UI screen that is output in connection with the process of FIG.
- the UI screen includes images I1 to I3.
- the UI screen also includes an image I4 (eg, any of the graphs shown in FIG. 13 is switchably displayed) showing the defects of each pattern sample. In the image I4, the user may arbitrarily change the threshold value for determining the defect.
- the UI screen also includes images I5 and I6 showing the global distribution of defects in sample 200. Image I5 corresponds to the determination result based on the graph shown in FIG. 13A, and image I6 corresponds to the determination result based on the graph shown in FIG. 13B.
- step S113 the computer system 140 ends the process of FIG. 14 (step S113).
- the correlation analysis of a plurality of characteristics at the same location becomes easier.
- Embodiment 2 Hereinafter, the inspection system according to the second embodiment will be described. The description may be omitted for the parts common to the first embodiment.
- FIG. 17 shows the configuration of the inspection system 100 according to the second embodiment.
- the electron beam emitted from the electron source 102 functions not only as an inspection beam but also as a working electron beam.
- the inspection system 100 according to the second embodiment includes a deflector 109 in place of the electron gun 106 of the inspection system 100 (FIG. 7) according to the first embodiment.
- the action beam control system 130 controls the deflector 109 to deflect the action electron beam and irradiate the sample 200 at a desired position.
- the inspection system 100 includes a database 170.
- the database 170 stores the relationship between the amount or change of secondary electrons associated with the irradiation of at least one of the acting laser and the acting electron beam and at least one of the second and third feature quantities.
- the database 170 stores the relationship between the amount or change amount of secondary electrons related to the irradiation of the acting laser and the second feature amount, and the secondary electrons related to the irradiation of the acting electron beam.
- the relationship between the amount or the amount of change and the third feature amount is memorized.
- a second feature (or a third).
- the value of feature quantity) is associated.
- the database 170 can be created in advance.
- the inspection system 100 refers to the database 170 in steps S108 and S110 (FIG. 14).
- the computer system 140 refers to the database 170 based on the amount or variation of secondary electrons associated with the irradiation of at least one of the working laser and the working electron beam to obtain at least one of the second and third features. get.
- FIG. 18 shows the irradiation timing of each action beam according to the second embodiment.
- FIG. 18A shows the irradiation timing when measuring the material properties based on the second inspection image.
- the inspection beam and the working laser are irradiated, and the working electron beam is not. Further, the working laser and the inspection beam are irradiated so that the irradiation timings do not overlap.
- the detector operates only while the inspection beam is irradiated and does not operate while the working laser is irradiated.
- FIG. 18B shows the irradiation timing when measuring the electrical characteristics based on the third inspection image.
- the inspection beam and the working electron beam are irradiated, and the working laser is not. Further, the working electron beam and the inspection beam are irradiated so that the irradiation timings do not overlap. In particular, from the time when the irradiation of the working electron beam is completed, the irradiation of the inspection beam is started after a predetermined interval.
- the inspection beam control system 120 may include a chopper. By controlling the chopper, it may be switched whether the electron beam emitted from the electron source 102 becomes an inspection beam or a working electron beam.
- the first or second action beam in the present embodiment, the action electron beam to be the second action beam
- the irradiation mechanism of the action beam for example, the electron gun 106
- the configuration is simplified.
- FIG. 19 shows a specific example of the sample 200 according to the second embodiment.
- the processing step of the sample 200 includes steps A and B.
- SiO2 is deposited on the Si substrate and then etched, whereby the SiO2 region is formed on the Si substrate.
- FIG. 19B Poly—Si (polysilicon) is further deposited in step B and then etched to form a Poly—Si region on the SiO2 region.
- IDs 1 to 3 are referred to as IDs 1 to 3, respectively. It is assumed that the quality of SiO2 is low only in the central pattern (ID2) (the tile pattern in the figure is shown differently).
- FIG. 20 shows an example of the measurement result immediately after the process A (before the process B).
- FIG. 20A is the result of measuring the material properties. When the wavelength of the working laser is lengthened, the amount of secondary electrons decreases, but the decrease of ID2 is slower than that of ID1 and ID3, and it can be seen that ID2 has poor crystallinity.
- FIG. 20B is the result of measuring the electrical characteristics. The amount of secondary electrons changes when the interval between the acting electron beam and the inspection beam is changed, but it can be seen that ID2 has many secondary electrons regardless of the interval and has poor insulation.
- FIG. 21 shows an example of the measurement result immediately after the process B.
- FIG. 21A is the result of measuring the material properties.
- the crystallinity of ID2 is greatly improved as compared with that shown in FIG. 20 (a), and is not so different from that of ID1 and ID3. That is, it can be seen that the crystallinity of ID2 was improved as the process proceeded.
- FIG. 21B is the result of measuring the electrical characteristics.
- the insulation of ID2 is slightly improved as compared with that shown in FIG. 20 (b), but is still poor as compared with ID1 and ID3. That is, it can be seen that the insulating property of ID2 is not improved so much even if the process progresses.
- FIG. 22 shows an example of changes in the feature amount as the process progresses.
- FIG. 22 (a) shows an example of change in material properties (crystallinity in this example)
- FIG. 22 (b) shows an example of changes in electrical properties (insulation in this example).
- the values shown in FIG. 22 are not directly related to the values shown in FIGS. 20 and 21.
- Each feature amount measured in each process is output in association with each process.
- the computer system 140 acquires information indicating a plurality of processing steps (step A and step B in the present embodiment) for the sample 200. Further, the computer system 140 has, for each of the plurality of processing steps for the sample 200, at least one of the first, second or third feature quantities (in the present embodiment, crystallinity as the second feature quantity and crystallinity. Insulation as a third feature quantity) is acquired. Then, the computer system 140 has at least one of the first, second, or third feature quantities related to each of the processing steps (in the present embodiment, the crystallinity as the second feature quantity and the third feature quantity). Insulation property) is output in association with the processing process.
- the first, second or third feature quantities in the present embodiment, crystallinity as the second feature quantity and crystallinity. Insulation as a third feature quantity
- Insulation property is output in association with the processing process.
- Embodiment 3 Hereinafter, the inspection system according to the third embodiment will be described. The description of the parts common to the first or second embodiment may be omitted.
- FIG. 23 shows the configuration of the inspection system 100 according to the third embodiment. Similar to the second embodiment (FIG. 17), the deflector 109 is provided in place of the electron gun 106 (FIG. 7). Further, the database 170 (FIG. 17) may be omitted as shown in the figure.
- FIG. 24 shows a specific example of the sample 200 according to the third embodiment.
- the processing step of the sample 200 includes steps A and B.
- step A a part of the region in the Si substrate is oxidized to SiO2, and the contact hole 210 is formed so as to partially expose the Si region.
- one of the contact holes 210 has a small exposed area in the Si region, which is a defect 211.
- the contact hole 210 is filled to form the contact plug 212, but as described above, the contact area between the contact plug 212 and the Si region becomes smaller in the portion corresponding to the defect 211. ing.
- FIG. 25 shows the result of the measurement according to the third embodiment.
- FIG. 25A is an example of the result of measuring the dimension (diameter in the longitudinal direction of the contact hole 210) immediately after the step A (before the step B).
- FIG. 25B is an example of the result of measuring the material properties immediately after the process A (before the process B).
- the composition of the material Si or SiO2 is measured as a material property, and the overlay amount (width of the Si region exposed in the contact hole 210) or the contour of the Si region is measured based on this. In the contact hole 210 corresponding to the defect 211, the overlay amount is small.
- FIG. 25 (c) is an example of the result of measuring the electrical characteristics immediately after the process B.
- the contact plug 212 corresponding to the defect 211 has a higher resistance than the other contact plugs 212 (shown in dark gray). Further, for a part of the contact plug 212 that does not correspond to the defect 211 (contact plug 212a shown in medium gray in the example of FIG. 25C), the overlay amount is normal, but the resistance is large.
- the computer system 140 classifies patterns (contact holes 210 and contact plugs 212 in the present embodiment). That is, at least one of the first, second, and third feature amounts (in the present embodiment, the dimension as the first feature amount, the overlay amount based on the composition as the second feature amount, and the third feature amount. Patterns (contact holes 210 and contact plugs 212 in this embodiment) are classified based on the resistance as a feature amount of the above. This classification is based on, for example, a predetermined range.
- FIG. 26 shows an example of the result of pattern classification.
- the horizontal axis of FIG. 26A represents the diameter of the contact hole 210, and the vertical axis represents the overlay amount.
- the horizontal axis of FIG. 26B represents the overlay amount, and the vertical axis represents the electrical characteristics (for example, resistance).
- the upper and lower limits of the normal range are designated for the horizontal axis and the vertical axis of FIG. 26 (a) and the vertical axis of FIG. 26 (b). Patterns within the normal range are classified as "good” and patterns outside the normal range are classified as "bad".
- the computer system 140 may output such a classification result.
- FIG. 27 shows another example of the result of pattern classification.
- the computer system 140 may output the classification result in the format as shown in FIG. 27.
- 27 (a) to 27 (c) show the regions on the wafer separately and display the regions, and the number or density of the patterns determined to be defective is shown for each region.
- Embodiment 4 the inspection system according to the fourth embodiment will be described. The description may be omitted for the parts common to any one of the first to third embodiments.
- a gate 220 and a source / drain 221 are formed on the sample 200 as a pattern. As shown in FIG. 28 (a), if the implant depth of the source / drain 221 is too shallow, a non-negligible leak current is generated, which is not preferable. Therefore, as shown in FIG. 28 (b), it is preferable to suppress the leak current by appropriately controlling the implant depth.
- FIG. 29 shows the principle of the method of controlling the implant depth using the inspection system according to the fourth embodiment.
- FIG. 29 (a) shows the relationship between the size of the pattern and the RC time constant at the time of irradiation with the working electron beam. The normal range is determined by the performance specifications.
- FIG. 29 (b) shows the relationship between the RC time constant (one of the electrical characteristics) when irradiating the working electron beam and the RC time constant (one of the material characteristics) when irradiating the working laser.
- the RC time constant when irradiating the working electron beam and the RC time constant when irradiating the working laser show a high correlation, but the wavelength of the working laser is short.
- the RC time constant at the time of irradiating the acting electron beam does not correlate with the RC time constant at the time of irradiating the acting laser, or the correlation is low.
- the sample 200 can be designed based on the relationships. For example, the relationship between the wavelength of light and the depth at which light enters the sample 200 can be measured or calculated in advance as shown in FIG. 29 (c). Then, from the result of FIG. 29 (b), it can be seen that the leakage current can be appropriately suppressed by implanting the implant to a depth of 300 nm through which the working laser having a wavelength of 400 nm enters.
- the sample 200 (or pattern) can be designed more appropriately.
- Embodiment 5 the inspection system according to the fifth embodiment will be described. The description may be omitted for the parts common to any one of the first to fourth embodiments.
- FIG. 30 shows a specific example of the sample 200 according to the fifth embodiment.
- FIG. 30 (a) is a cross-sectional view
- FIG. 30 (b) is a top view.
- a SiO film and a SiN film are formed on the Si substrate, forming a pattern as a laminated film.
- the thickness x of the SiO film and the thickness y of the SiN film may vary due to variations in film formation conditions.
- the dimension D (for example, diameter) may differ depending on the patterning conditions. Since the performance of the sample 200 changes depending on the film thickness x, y and the dimension D, it is useful to appropriately measure and manage these values.
- FIG. 31 shows an example of the result of measuring the dimension D.
- FIG. 31 (a) shows an inspection image (first inspection image) without using the action beam
- FIG. 31 (b) shows the dimension D (diameter) of each pattern.
- the acceleration voltage of the inspection beam was 800 V
- the current was 8 pA.
- FIG. 31A four patterns are formed, and these are referred to as IDs 1 to 4, respectively.
- FIG. 32 shows an example of the result of measuring the material properties.
- the material property is the depth in the direction orthogonal to the screen (ie, at least dimensions that do not appear directly in the inspection image).
- the wavelength of the working laser was 350 nm
- the average intensity was 500 mW
- the second inspection image was acquired using S-polarization and P-polarization, respectively.
- the acceleration voltage of the inspection beam was 500 V
- the current was 20 pA.
- FIG. 32 (a) is an image when S polarization is used
- FIG. 32 (b) is an image when P polarization is used. These are all the second inspection images.
- FIG. 32 (c) shows the brightness (corresponding to the amount of secondary electrons) of each pattern in each inspection image. Based on the brightness, the light absorption of each pattern can be calculated. Further, in the present embodiment, the relationship between the composition of the material and the degree of light absorption for each polarization is stored in advance in the database 170 (see FIG. 17) or the like.
- FIG. 33 shows a specific example of the degree of light absorption.
- each pattern is composed of two types of films, and the brightness for the two types of polarization is measured, so that the film thicknesses x and y can be calculated by solving the simultaneous equations.
- Ss is the brightness in the inspection image when the acting laser is S-polarized
- Sp is the brightness in the inspection image when the acting laser is P-polarized.
- the functions f (Ss) and f (Sp) are, for example, linear functions and are stored in a database 170 or the like.
- FIG. 34 shows an example of the results of calculating the film thicknesses x and y.
- the dimension (thickness) in the depth direction of the image can be measured as the second feature amount by using the second inspection image. Therefore, when combined with the first inspection image, each pattern can be measured. You can know the thickness at the position.
- FIG. 35 shows an example of the result of measuring the electrical characteristics (capacitance).
- the acceleration voltage of the working electron beam was 500 V
- the current was 100 pA
- the interval was 1 ⁇ s.
- the acceleration voltage of the inspection beam was set to 500 V
- the current was set to 20 pA.
- FIG. 35 (a) is an image at the time of electrical characteristic measurement, that is, a third inspection image.
- FIG. 35B shows the brightness (corresponding to the capacitance) of each pattern in the inspection image.
- the relationship between the brightness and the capacitance can be stored in advance in, for example, the database 170.
- the capacitance can be measured as the third feature amount using the third inspection image. Therefore, when combined with the first and second inspection images, each feature amount at each position of the pattern Correlation can be easily analyzed.
- the inspection beam and the second action beam are electron beams, and the first action beam is a action laser, but the type of each beam can be arbitrarily changed.
- the first feature amount is an amount related to dimensions
- the second feature amount is an amount related to material properties
- the third feature amount is an amount related to electrical characteristics.
- Electron source (inspection beam irradiation system) 105 ... Detector 106 ... Electron gun (first action beam irradiation system) 107 ... Laser device (first action beam irradiation system) 140 ... Computer system 170 ... Database 200 ... Sample 211 ... Defect D ... Dimensions (first feature quantity) x, y ... Thickness (second feature amount) B1 ... Inspection beam B2 ... Laser (first action beam) B3 ... Electron beam (second action beam) B4 ... Secondary electrons (secondary charged particles) I1 ... Image (first inspection image) I2 ... Image (second inspection image) I3 ... Image (third inspection image) P1, P2, P3 ... Pattern
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Abstract
Description
試料に対して荷電粒子ビームである検査ビームを照射する検査ビーム照射系と、
前記検査ビームを前記試料に照射することによって得られる二次荷電粒子を検出して、検出信号を出力する検出器と、
前記二次荷電粒子の量を変化させる、第1の作用ビームを照射する第1の作用ビーム照射系と、
前記二次荷電粒子の量を変化させる、第2の作用ビームを照射する第2の作用ビーム照射系と、
前記検出信号に基づいて前記試料の画像を生成するコンピュータシステムと、
を備え、
前記コンピュータシステムは、
前記検査ビームの照射に係る第1の検査画像を生成し、
前記第1の検査画像に基づいて、前記試料上のパターンに関する第1の特徴量を取得し、
前記第1の作用ビームおよび前記検査ビームの照射に係る第2の検査画像を生成し、
前記第2の検査画像に基づいて、前記パターンに関する第2の特徴量を取得し、
前記第2の作用ビームおよび前記検査ビームの照射に係る第3の検査画像を生成し、
前記第3の検査画像に基づいて、前記パターンに関する第3の特徴量を取得する。
実施形態1.
図7に、実施形態1に係る検査システム100の構成を示す。検査システム100は、筐体101と、電子源102と、偏向器103と、対物レンズ104と、検出器105と、電子銃106と、レーザ装置107と、窓108と、検査ビーム制御系120と、作用ビーム制御系130と、コンピュータシステム140とを備える。
以下、実施形態2に係る検査システムについて説明する。実施形態1と共通する部分については、説明を省略する場合がある。
以下、実施形態3に係る検査システムについて説明する。実施形態1または2と共通する部分については、説明を省略する場合がある。
以下、実施形態4に係る検査システムについて説明する。実施形態1~3のいずれかと共通する部分については、説明を省略する場合がある。
以下、実施形態5に係る検査システムについて説明する。実施形態1~4のいずれかと共通する部分については、説明を省略する場合がある。
x+3y=f(Ss)
5x+20y=f(Sp)
ただしSsは作用レーザをS偏光とした場合の検査画像における明度であり、Spは作用レーザをP偏光とした場合の検査画像における明度である。関数f(Ss)およびf(Sp)はたとえば線形関数であり、データベース170等に記憶される。
上述の実施形態1~5は、それぞれ独立した実施形態として提示したが、異なる実施形態の一部を組み合わせて実施することも可能である。
102…電子源(検査ビーム照射系)
105…検出器
106…電子銃(第1の作用ビーム照射系)
107…レーザ装置(第1の作用ビーム照射系)
140…コンピュータシステム
170…データベース
200…試料
211…欠陥
D…寸法(第1の特徴量)
x,y…厚さ(第2の特徴量)
B1…検査ビーム
B2…レーザ(第1の作用ビーム)
B3…電子ビーム(第2の作用ビーム)
B4…二次電子(二次荷電粒子)
I1…画像(第1の検査画像)
I2…画像(第2の検査画像)
I3…画像(第3の検査画像)
P1,P2,P3…パターン
Claims (11)
- 試料に対して荷電粒子ビームである検査ビームを照射する検査ビーム照射系と、
前記検査ビームを前記試料に照射することによって得られる二次荷電粒子を検出して、検出信号を出力する検出器と、
前記二次荷電粒子の量を変化させる、第1の作用ビームを照射する第1の作用ビーム照射系と、
前記二次荷電粒子の量を変化させる、第2の作用ビームを照射する第2の作用ビーム照射系と、
前記検出信号に基づいて前記試料の画像を生成するコンピュータシステムと、
を備え、
前記コンピュータシステムは、
前記検査ビームの照射に係る第1の検査画像を生成し、
前記第1の検査画像に基づいて、前記試料上のパターンに関する第1の特徴量を取得し、
前記第1の作用ビームおよび前記検査ビームの照射に係る第2の検査画像を生成し、
前記第2の検査画像に基づいて、前記パターンに関する第2の特徴量を取得し、
前記第2の作用ビームおよび前記検査ビームの照射に係る第3の検査画像を生成し、
前記第3の検査画像に基づいて、前記パターンに関する第3の特徴量を取得する、
ことを特徴とする検査システム。 - 前記検査ビーム、
前記第1の作用ビーム、
前記第2の作用ビーム、
のうち、少なくとも1つは、これらのうち他の2つに対して、
ビーム種類、
照射エネルギー、
照射期間、
照射領域、
のうち1つ以上が異なることを特徴とする、請求項1に記載の検査システム。 - 前記検査システムは、前記第1および前記第2の作用ビームの少なくとも一方の照射に係る二次荷電粒子の量または変化量と、前記第2および第3の特徴量の少なくとも一方との関係を記憶するデータベースを備え、
前記コンピュータシステムは、前記第1および前記第2の作用ビームの少なくとも一方の照射に係る二次荷電粒子の量または変化量に基づき、前記データベースを参照して、前記第2および第3の特徴量の少なくとも一方を取得する
ことを特徴とする、請求項1に記載の検査システム。 - 前記コンピュータシステムは、前記第1、第2および第3の特徴量のうち少なくとも1つと、所定の閾値とに基づき、前記パターンの欠陥を表す情報を取得することを特徴とする、請求項1に記載の検査システム。
- 前記コンピュータシステムは、前記第1、第2および第3の特徴量のうち少なくとも1つと、所定の範囲とに基づき、前記パターンを分類することを特徴とする、請求項1に記載の検査システム。
- 前記コンピュータシステムは、
前記試料に対する複数の加工工程のそれぞれについて、前記第1、第2または第3の特徴量のうち少なくとも1つを取得し、
前記加工工程のそれぞれに係る前記第1、第2または第3の特徴量のうち少なくとも1つを、当該加工工程に関連付けて出力する、
ことを特徴とする、請求項1に記載の検査システム。 - 前記第1の作用ビームはレーザであり、前記第2の作用ビームは電子ビームであることを特徴とする、請求項2に記載の検査システム。
- 前記第1または第2の作用ビームは、パルス状に照射される前記検査ビームであることを特徴とする、請求項2に記載の検査システム。
- 前記第1の特徴量は、前記第1の検査画像に表れる寸法を含むことを特徴とする、請求項1に記載の検査システム。
- 前記第2の特徴量は、
前記第2の検査画像に表れる寸法、
前記第2の検査画像に表れない寸法、
組成、
ドーパントに関する情報、
結晶性に関する情報、
キャリア移動度、
キャリア寿命、
RC時定数、
のうち少なくとも1つを含むことを特徴とする、請求項1に記載の検査システム。 - 前記第3の特徴量は、
電気抵抗、
静電容量、
V-I特性、
RC時定数、
のうち少なくとも1つを含むことを特徴とする、請求項1に記載の検査システム。
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JP2022550318A JP7493047B2 (ja) | 2020-09-18 | 2020-09-18 | 検査システム |
US18/024,797 US20240029994A1 (en) | 2020-09-18 | 2020-09-18 | Inspection System |
KR1020237005658A KR20230041754A (ko) | 2020-09-18 | 2020-09-18 | 검사 시스템 |
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JP2002026102A (ja) * | 2000-06-30 | 2002-01-25 | Hitachi Ltd | 検査情報処理方法及びその検査システム |
JP2017162557A (ja) * | 2016-03-07 | 2017-09-14 | 日本電子株式会社 | 電子顕微鏡 |
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US6806951B2 (en) | 2000-09-20 | 2004-10-19 | Kla-Tencor Technologies Corp. | Methods and systems for determining at least one characteristic of defects on at least two sides of a specimen |
JP6575350B2 (ja) * | 2015-12-24 | 2019-09-18 | ブラザー工業株式会社 | レーザ加工装置 |
US10733744B2 (en) * | 2017-05-11 | 2020-08-04 | Kla-Tencor Corp. | Learning based approach for aligning images acquired with different modalities |
TWI691608B (zh) * | 2017-09-12 | 2020-04-21 | 日商Hoya股份有限公司 | 光罩之修正方法、光罩之製造方法、光罩及顯示裝置之製造方法 |
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