WO2022013167A1 - Fabrication de cellules solaires - Google Patents
Fabrication de cellules solaires Download PDFInfo
- Publication number
- WO2022013167A1 WO2022013167A1 PCT/EP2021/069370 EP2021069370W WO2022013167A1 WO 2022013167 A1 WO2022013167 A1 WO 2022013167A1 EP 2021069370 W EP2021069370 W EP 2021069370W WO 2022013167 A1 WO2022013167 A1 WO 2022013167A1
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- WIPO (PCT)
- Prior art keywords
- layer
- solar cell
- doped
- tunnel oxide
- dopant
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 239000002019 doping agent Substances 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 16
- 238000002161 passivation Methods 0.000 claims description 16
- 239000010410 layer Substances 0.000 description 116
- 230000000873 masking effect Effects 0.000 description 18
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- 230000003667 anti-reflective effect Effects 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 230000003467 diminishing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/20—Optical components
- H02S40/22—Light-reflecting or light-concentrating means
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present description generally relates to solar cells and, more particularly, to the structures of solar cells with contacts via the rear face and their method of manufacture.
- Solar cells are devices intended to convert sunlight into electrical energy.
- a solar cell structure is based on the presence of a p-type region and an n-type region on the same semiconductor substrate.
- each region is coupled to metal contacts on the back face of the solar cells to allow an external electrical circuit or device to be coupled to and powered by the solar cell as described. in US2016/0351737 and in US7468485.
- One embodiment provides a method of fabricating a solar cell, the method comprising, in order: forming a tunnel oxide on at least one surface of a semiconductor substrate; forming a first layer doped with a dopant of a first conductivity type on the tunnel oxide; forming a mask on the first doped layer; forming a second layer doped with a dopant of a second conductivity type on the mask; and doping at least a first region of the first doped layer using a laser, through the second doped layer with the dopant of the second conductivity type.
- the method comprises the formation of trenches extending in the second layer, in the mask, in the first doped layer and in the tunnel oxide after the formation of the second layer.
- trenches separate the first region of the first doped layer from the second regions of the first doped layer.
- the method comprises texturing the semiconductor substrate on another surface.
- the method comprises the formation of a passivation film on the first doped layer, the passivation layer covering the inside of the trenches.
- a solar cell with interdigitated rear contacts or IBC obtained by the method described above.
- One embodiment provides a solar panel comprising IBC solar cells.
- Figure 1 illustrates a sectional view illustrating an example of a solar cell
- FIG. 2 illustrates a sectional view illustrating a step of an exemplary method of manufacturing the solar cell illustrated in FIG. 1
- Figure 3 illustrates another step of the manufacturing process of Figure 2
- Figure 4 illustrates another step of the manufacturing process of Figure 2
- Figure 5 illustrates another step of the manufacturing process of Figure 2
- Figure 6 illustrates another step of the manufacturing process of Figure 2
- Figure 7 illustrates another step of the manufacturing process of Figure 2
- Figure 8 illustrates another step of the manufacturing process of Figure 2
- Figure 9 illustrates another step of the manufacturing process of Figure 2
- Figure 10 illustrates another step of the manufacturing process of Figure 2
- Figure 11 illustrates another step of the manufacturing process of Figure 2
- Figure 12 illustrates another step of the manufacturing process of Figure 2
- Figure 13 illustrates another step of the manufacturing process of Figure 2
- Figure 14 illustrates another step of the manufacturing process of Figure 2
- Figure 15 illustrates another step of the manufacturing process of Figure 2
- Figure 16 illustrates another step of the manufacturing process of Figure 2
- FIG. 17 illustrates a sectional view illustrating a solar cell according to an embodiment of the present description
- FIG. 18 illustrates a sectional view illustrating a step of a method for manufacturing a solar cell according to the embodiment of the present description
- Figure 19 illustrates another step of the manufacturing process of Figure 18
- Figure 20 illustrates another step of the manufacturing process of Figure 18
- Figure 21 illustrates another step of the manufacturing process of Figure 18
- Figure 22 illustrates another step of the manufacturing process of Figure 18
- Figure 23 illustrates another step of the manufacturing process of Figure 18
- Figure 24 illustrates another step of the manufacturing process of Figure 18
- Figure 25 illustrates another step of the manufacturing process of Figure 18
- Figure 26 illustrates another step of the manufacturing process of Figure 18.
- Figure 27 illustrates another step in the manufacturing process of Figure 18.
- Figure 1 is a sectional view illustrating an example of a solar cell.
- the solar cell shown in Figure 1 consists of a semiconductor substrate 10 having a front face portion intended to receive solar radiation during normal operation and a rear face portion where metal contacts of the solar cell are formed .
- the solar cell has a textured front face covered with a doped layer 37.
- the solar cell of FIG. 1 comprises first regions 32 of a first type of conductivity, such as p-type regions, and second regions 36 of a second type of conductivity, such as p-type regions. n, formed in an undoped layer 30B on the rear face of the substrate 10.
- a tunnel oxide layer 20B can be formed on the rear face of the substrate 10, more precisely, between the substrate 10 and the undoped layer 30B.
- Layer 37 is of the second type of conductivity.
- Metallic contacts 41 are connected to regions 32 and 36 to allow external circuits and devices to receive electrical power from the solar cell.
- FIGS. 1 may include passivation layers 38, 39, 40 to protect the structure from external electrical damage.
- FIGs 2 to 16 are sectional views illustrating steps of an example of the solar cell manufacturing process illustrated in Figure 1.
- the method of manufacturing the solar cell shown in Figure 1 may include:
- FIG. 3 the formation (FIG. 3) of a tunnel oxide layer 20F on a front face 101 of the substrate 10 and of another tunnel oxide layer 20B on a rear face 103 of the substrate 10;
- the doped layer comprises a dopant of a first type of conductivity (p or n);
- Figure 17 is a sectional view illustrating a solar cell according to an embodiment of the present description.
- the solar cell illustrated in FIG. 17 consists of a semiconductor substrate 50 having a part a front face intended to receive solar radiation during normal operation and a rear face part where metal contacts with the solar cell are formed.
- the solar cell has a textured front face covered by a doped layer 64.
- the solar cell of FIG. 17 comprises one or more regions 541 of a first type of conductivity, such as p-type regions, and one or more regions 66 of a second type of conductivity, such as regions n-type, formed on the rear face of the substrate 50.
- a tunnel oxide layer 52 can be formed on the rear face of the substrate 50, more precisely, between the substrate 50 and the regions 541, 66.
- Metallic contacts 76 and 78 are connected, respectively, to regions 541, 66 to allow external circuits and devices to receive electrical power from the solar cell.
- the solar cell of Figure 17 may include passivation layers 70, 72, 74 to protect the structure from external electrical damage.
- the solar cell represented in FIG. 17 may comprise, between region 541 and region 66, trenches 60 and, in substrate 50, a shallow depth 68 of the substrate doped with the dopants of the second type of conductivity. .
- Figure 18 illustrates a manufacturing step of a contact solar cell according to the embodiment of the present description.
- the substrate 50 is a semiconductor substrate, for example a silicon wafer, preferably doped with an n-type dopant such as as phosphorus (P) or a p-type dopant such as gallium (Ga) and boron (B).
- an n-type dopant such as as phosphorus (P) or a p-type dopant such as gallium (Ga) and boron (B).
- the substrate 50 has a front face 501 and a rear face 503.
- the front face 501 is the face of the solar cell intended to receive solar radiation.
- Substrate 50 is thinned to a thickness of, for example, about 240 ⁇ m using a process that also etches away damage to the wafer surfaces (saw etch - SDE).
- Figure 19 illustrates another manufacturing step of a contact solar cell according to the embodiment of the present description.
- a doped layer 54 for example a p-doped polycrystalline silicon layer, is formed on a tunnel oxide layer 52.
- the tunnel oxide layer 52 is formed on the rear face 503 and, for example, on the front face of the substrate 50.
- the tunnel oxide layer 52 is formed in order to be thin enough to increase the probability of tunneling of electrons directly through the tunnel oxide layer 52.
- the tunnel oxide layer 52 can have a thickness of about 7 Angstroms to about 20 Angstroms. According to one embodiment, the tunnel oxide layer 52 has a thickness of approximately 10 Angstroms.
- Tunnel oxide layer 52 may be formed, for example, by thermal growth or by chemical deposition (eg, plasma-enhanced chemical vapor deposition (PECVD) or low-pressure chemical vapor deposition (LPCVD)).
- PECVD plasma-enhanced chemical vapor deposition
- LPCVD low-pressure chemical vapor deposition
- Tunnel oxide layer 52 can be formed using an ozone oxidation process, which involves digging substrate 50 into a bath comprising ozone suspended in deionized water. For example, substrate 50 may first undergo wet etching using potassium hydroxide to thin the substrate. 50, then a rinse-clean cycle, then the ozone oxidation process to form a tunnel oxide layer 52 all in the same equipment. During the ozone oxidation process, a tunnel oxide grows on both sides of the substrate 50.
- a tunnel oxide layer 52 may also be formed using other methods without diminishing the benefits of this disclosure.
- the polycrystalline silicon layer 54 can have a thickness of approximately 2000 Angstroms.
- the polycrystalline silicon layer can be deposited on tunnel oxide 52 by PECVD or LPCVD using boron trichloride (BCI3) or diborane (B2H6) with silane (S1H4).
- a masking layer 56 is formed over and under layer 54 to completely envelop the structure.
- Masking layer 56 will be used in a subsequent etch and laser process ( Figures 23-25) exposing portions of layer 54.
- a layer 57 is formed over and under masking layer 56 to completely envelop the structure.
- layer 57 may be doped with an n-type dopant.
- the layer 57 is made of a phosphosilicate glass (PSG), for example, by an atmospheric reaction of phosphine (PH3) and tetraethyl orthosilicate (TEOS).
- PSG phosphosilicate glass
- PH3 phosphine
- TEOS tetraethyl orthosilicate
- FIG. 19 another masking layer 58 is formed on layer 57 in order to completely cover the structure.
- the masking layers 56 and 58 and the layer 57 can be formed, for example, by thermal growth or by chemical deposition (PECVD or LPCVD). However, various other methods can be applied to form the masking layers 56, 58 and the layer 57.
- the masking layers 56, 58 can be made of a material, which is chosen to be an undoped material having no conductive dopant and for its ability to prevent the diffusion of the n-conductivity dopant.
- the mask layers 56, 58 may be a single layer comprising silicon oxide (SiO ) , silicon nitride (SiH ) , silicon oxynitride (SiO 2 Ny), intrinsic amorphous silicon, or silicon carbide (SiC), or a combination of these materials.
- SiO silicon oxide
- SiH silicon nitride
- SiO 2 Ny silicon oxynitride
- SiC silicon carbide
- FIG. 20 illustrates another step in the manufacture of a contact solar cell according to the embodiment of the present description.
- the masking layers 56, 58 and the layer 57 are removed from the front face (on the side of the front face 501 of the substrate 50). If masking layers 56, 58 and layer 57 are formed in the previous step by PECVD, the present removal step can be skipped.
- FIG. 21 illustrates another step in the manufacture of a solar cell according to the embodiment of the present description.
- the masking layers are identical to one embodiment.
- trenches 60 are, for example, made using a laser.
- the masking layers 56, 58 and the layer 57 are removed from the back face (on the side of the back face 503 of the substrate 50) in certain areas in order to create openings in one step. .
- the openings are, for example, made using a laser.
- masking layers 56, 58 and layer 57 are used during etching of p-type dopant layer 54 and tunnel oxide layer 52.
- layer 54, layer 52 and substrate 50 are patterned using a wet etch process comprising hydrofluoric acid, potassium hydroxide, and isopropyl alcohol or TMAH (tetramethylammonium hydroxide) solution.
- TMAH tetramethylammonium hydroxide
- the wet etch process etches to create trenches 60 which extend from openings in layer 54, in tunnel oxide layer 52 and in substrate 50. Regions 541 and 542 are formed in layer 57. 54.
- each trench 60 has a width of between 30 nm and 200 ⁇ m.
- Figure 21 also illustrates the doping of areas 542 to create regions 66.
- the method of doping areas 52 is implemented using a laser.
- the laser can have a wavelength of 1064 nm or less. This is because it is difficult to produce a laser having a wavelength exceeding 1064 nm. Other said, any wavelength among infrared light, ultraviolet light and visible light can be used as a laser. To date, in one example, the laser may be a laser having a wavelength in the range of 500 nm to 650 nm, i.e. a green laser.
- FIG. 22 illustrates another step in the manufacture of a contact solar cell according to the embodiment of the present description.
- the front face 501 of the substrate 50 is textured.
- the faceplate 501 can be textured using a wet etching process or another chemical etching process including, for example, potassium hydroxide and isopropyl alcohol or a TMAH (tetramethylammonium hydroxide) solution.
- the wet etching process textures the front face 501 with random pyramids, thus advantageously improving the solar radiation collection efficiency.
- This embodiment illustrates that the front surface 501 of the semiconductor substrate 50 is textured at this step.
- the embodiment of the present description is not limited to this.
- FIG. 23 illustrates another step in the manufacture of a contact solar cell according to the embodiment of the present description.
- the structure shown in Figure 22 is, in Figure 23, placed in a gaseous atmosphere 62 containing an n-type conductivity dopant.
- the gas atmosphere 62 can be created using various gases containing the n-type conductivity dopant.
- the gas atmosphere 62 may include phosphoryl trichloride (POCI3).
- POCI3 phosphoryl trichloride
- the front surface 501 of the semiconductor substrate 50 can be doped with the n-type conductivity dopant.
- a front surface field region 64 may also be formed during the doping process.
- the embodiment of the present description is not limited thereto.
- an anti-diffusion film can be formed on the front surface 501 of the semiconductor substrate 50 so that no front surface field 64 is formed during the doping process.
- the front surface field region 64 may be formed in a separate process selected from various processes including, for example, ion implantation, thermal diffusion, and laser doping.
- the field zones of 64 and the regions 68 are produced during the same doping process under POCI3.
- the structure is, for example, heated.
- FIG. 24 illustrates another manufacturing step of a contact solar cell according to the embodiment of the present description.
- the masks 56, 58, and the layer 57 are removed and the structure is removed from the gaseous atmosphere 62.
- FIG. 25 illustrates another step in the manufacture of a contact solar cell according to the embodiment of the present description.
- an insulating film 70 is formed on the front surface of the semiconductor substrate 50.
- the insulating film 70 has a front surface passivation film and an anti-reflective film which are formed on the front surface. of the layer 64.
- the front surface passivation film and the anti-reflective film are formed on the entire front surface of the layer 64.
- the front surface passivation film and the anti-reflective film can be formed by using various methods such as, for example, vacuum deposition, chemical vapor deposition, spin coating, screen printing, or spray coating. The formation sequence of the front surface passivation film and the anti-reflective film is not defined.
- FIG. 26 illustrates another manufacturing step of a contact solar cell according to the embodiment of the present description.
- the insulating films 72 and 74 are formed respectively on the rear surface and on the side surface of the structure.
- the rear surface passivation film 72 is formed over the entire rear surface of the structure.
- Back surface passivation film 72 can be formed using various methods such as, for example, vacuum deposition, chemical vapor deposition, spin coating, screen printing, or spray coating.
- FIG. 27 illustrates another manufacturing step of a contact solar cell according to the embodiment of the present description.
- Figure 27 illustrates the formation of first and second electrodes 76 and 78, which are connected to conductive regions 541 and 66 respectively.
- the first and second electrodes 76 and 78 can be formed by applying a paste, on the rear surface, for example, by screen printing, then by producing, for example, contact by thermal diffusion or by laser illumination.
- the rear surface is etched, for example, the passivation film 72 is etched before the deposition of a metal, in order to create metallizations.
- An advantage of the second embodiments and implementations is that the deposition of the tunnel oxide, of the doped layer and of the mask is carried out in one step, unlike the first embodiment.
- An advantage of the second embodiments and implementations is that the solar cell manufacturing process is shorter and less expensive than the first embodiment.
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Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020237004705A KR20230050332A (ko) | 2020-07-13 | 2021-07-12 | 태양 전지 제조 |
JP2023503072A JP2023534501A (ja) | 2020-07-13 | 2021-07-12 | 太陽電池の製造 |
US18/003,040 US20230253520A1 (en) | 2020-07-13 | 2021-07-12 | Solar cell manufacture |
CN202180049702.7A CN115803894A (zh) | 2020-07-13 | 2021-07-12 | 太阳能电池的制造 |
EP21743470.3A EP4179577A1 (fr) | 2020-07-13 | 2021-07-12 | Fabrication de cellules solaires |
CA3188180A CA3188180A1 (fr) | 2020-07-13 | 2021-07-12 | Fabrication de cellules solaires |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2007382A FR3112428A1 (fr) | 2020-07-13 | 2020-07-13 | Procédé de formation de contacts passivés pour cellules solaires IBC |
FR2007382 | 2020-07-13 | ||
FR2011026A FR3112430A1 (fr) | 2020-07-13 | 2020-10-28 | Fabrication de cellules solaires |
FR2011026 | 2020-10-28 |
Publications (1)
Publication Number | Publication Date |
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WO2022013167A1 true WO2022013167A1 (fr) | 2022-01-20 |
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Application Number | Title | Priority Date | Filing Date |
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PCT/EP2021/069370 WO2022013167A1 (fr) | 2020-07-13 | 2021-07-12 | Fabrication de cellules solaires |
Country Status (9)
Country | Link |
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US (1) | US20230253520A1 (fr) |
EP (1) | EP4179577A1 (fr) |
JP (1) | JP2023534501A (fr) |
KR (1) | KR20230050332A (fr) |
CN (1) | CN115803894A (fr) |
CA (1) | CA3188180A1 (fr) |
FR (2) | FR3112428A1 (fr) |
TW (1) | TW202209694A (fr) |
WO (1) | WO2022013167A1 (fr) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2007382A1 (fr) | 1968-04-04 | 1970-01-09 | Ciba Geigy Ag | |
FR2011026A1 (fr) | 1968-06-15 | 1970-02-27 | Rheinmetall Gmbh | |
US7468485B1 (en) | 2005-08-11 | 2008-12-23 | Sunpower Corporation | Back side contact solar cell with doped polysilicon regions |
FR2988908A1 (fr) * | 2012-04-03 | 2013-10-04 | Commissariat Energie Atomique | Procede de fabrication d'une cellule photovoltaique a contacts interdigites en face arriere |
US20160351737A1 (en) | 2015-05-28 | 2016-12-01 | Lg Electronics Inc. | Solar cell and method of manufacturing the same |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7737357B2 (en) * | 2006-05-04 | 2010-06-15 | Sunpower Corporation | Solar cell having doped semiconductor heterojunction contacts |
-
2020
- 2020-07-13 FR FR2007382A patent/FR3112428A1/fr active Pending
- 2020-10-28 FR FR2011026A patent/FR3112430A1/fr active Pending
-
2021
- 2021-07-12 CA CA3188180A patent/CA3188180A1/fr active Pending
- 2021-07-12 EP EP21743470.3A patent/EP4179577A1/fr active Pending
- 2021-07-12 WO PCT/EP2021/069370 patent/WO2022013167A1/fr unknown
- 2021-07-12 JP JP2023503072A patent/JP2023534501A/ja active Pending
- 2021-07-12 KR KR1020237004705A patent/KR20230050332A/ko unknown
- 2021-07-12 US US18/003,040 patent/US20230253520A1/en active Pending
- 2021-07-12 CN CN202180049702.7A patent/CN115803894A/zh active Pending
- 2021-07-13 TW TW110125592A patent/TW202209694A/zh unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2007382A1 (fr) | 1968-04-04 | 1970-01-09 | Ciba Geigy Ag | |
FR2011026A1 (fr) | 1968-06-15 | 1970-02-27 | Rheinmetall Gmbh | |
US7468485B1 (en) | 2005-08-11 | 2008-12-23 | Sunpower Corporation | Back side contact solar cell with doped polysilicon regions |
FR2988908A1 (fr) * | 2012-04-03 | 2013-10-04 | Commissariat Energie Atomique | Procede de fabrication d'une cellule photovoltaique a contacts interdigites en face arriere |
US20160351737A1 (en) | 2015-05-28 | 2016-12-01 | Lg Electronics Inc. | Solar cell and method of manufacturing the same |
Non-Patent Citations (1)
Title |
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REICHEL C. ET AL.: "Interdigitated Back Contact silicon solar cells with tunnel oxide passivated contacts formed by ion implantation", PROCEEDINGS OF THE 29TH EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE AND EXHIBITION, WIP-RENEWABLE ENERGIES, SYLVENSTEINSTR. 2 81369 MUNICH, GERMANY, 3 November 2014 (2014-11-03), XP040677439, ISBN: 978-3-936338-34-8 * |
Also Published As
Publication number | Publication date |
---|---|
EP4179577A1 (fr) | 2023-05-17 |
CN115803894A (zh) | 2023-03-14 |
FR3112430A1 (fr) | 2022-01-14 |
KR20230050332A (ko) | 2023-04-14 |
TW202209694A (zh) | 2022-03-01 |
JP2023534501A (ja) | 2023-08-09 |
FR3112428A1 (fr) | 2022-01-14 |
CA3188180A1 (fr) | 2022-01-20 |
US20230253520A1 (en) | 2023-08-10 |
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