WO2022011548A1 - Image sensing apparatus and related electronic device - Google Patents

Image sensing apparatus and related electronic device Download PDF

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Publication number
WO2022011548A1
WO2022011548A1 PCT/CN2020/101882 CN2020101882W WO2022011548A1 WO 2022011548 A1 WO2022011548 A1 WO 2022011548A1 CN 2020101882 W CN2020101882 W CN 2020101882W WO 2022011548 A1 WO2022011548 A1 WO 2022011548A1
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filter layer
image sensing
pixel
sensing device
pixels
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PCT/CN2020/101882
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French (fr)
Chinese (zh)
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赵维民
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深圳市汇顶科技股份有限公司
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Priority to CN202080033579.5A priority Critical patent/CN114190113A/en
Priority to PCT/CN2020/101882 priority patent/WO2022011548A1/en
Publication of WO2022011548A1 publication Critical patent/WO2022011548A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof

Definitions

  • the present application relates to a sensing device, and in particular, to an image sensing device and related electronic devices.
  • Image sensing devices have been mass-produced and applied. When evaluating the performance of an image sensing device, the sensitivity and signal-to-noise ratio of the image sensing device under low light are usually considered. Therefore, there is a need for an innovative design to improve the light-sensing capability of an image sensing device under low light and at the same time improve the signal-to-noise ratio of the image sensing device.
  • One of the objectives of the present application is to disclose an image sensing device and related electronic devices capable of improving light sensitivity, so as to solve the above problems.
  • An embodiment of the present application discloses an image sensing device, including a pixel array, including: a plurality of pixels, respectively including: a microlens; a first filter layer; a second filter layer; and a photodiode, wherein the first filter layer The filter layer and the second filter layer are arranged between the microlens and the photodiode; wherein the first filter layer of the first pixel in the plurality of pixels is a red, blue or green filter layer, and the second filter layer of the first pixel to pass visible light and not pass infrared light.
  • An embodiment of the present application discloses an electronic device, including the aforementioned image processing device.
  • the image sensing device and related electronic devices disclosed in the present application can utilize novel filter layer designs to improve the light-sensing capability of the image sensing device.
  • FIG. 1 is a schematic diagram of an embodiment of an image sensing device of the present application.
  • FIG. 2 is a transmission spectrum diagram of the filter layer 106a.
  • FIG. 4 is a schematic diagram of another embodiment of the image sensing device of the present application.
  • FIG. 5 is a transmission spectrum diagram of the filter layer 1061a.
  • FIG. 6 is a transmission spectrum diagram of the filter layer 1062a.
  • FIG. 7 is a schematic diagram of another embodiment of the image sensing device of the present application.
  • FIG. 8 is a schematic diagram of yet another embodiment of the image sensing device of the present application.
  • FIG. 9 is a schematic diagram of an embodiment of an electronic device of the present application.
  • FIG. 10 is a transmission spectrum diagram of the filter layer 112 .
  • first and second features are in direct contact with each other; and may also include Certain embodiments may have additional components formed between the first and second features described above, such that the first and second features may not be in direct contact.
  • present disclosure may reuse reference numerals and/or reference numerals in various embodiments. Such reuse is for brevity and clarity, and does not in itself represent a relationship between the different embodiments and/or configurations discussed.
  • spatially relative terms such as “below”, “below”, “below”, “above”, “above” and the like, may be used to facilitate the description of the drawings. relationship between one component or feature shown with respect to another component or feature.
  • These spatially relative terms are intended to encompass many different orientations of the device in use or operation in addition to the orientation depicted in the figures.
  • the device may be positioned in other orientations (eg, rotated 90 degrees or at other orientations) and these spatially relative descriptors should be interpreted accordingly.
  • FIG. 1 is a schematic diagram of an embodiment of a self-contained image sensing device 200 .
  • the image sensing device 200 includes a pixel array 100, including at least pixels 101a and 101b, wherein the pixel 101a is a general pixel and is mainly used for sensing visible light, for example, used as a red, blue or green pixel in a general Bayer pattern; the pixel 101b is A high-sensitivity pixel, for example, is used as a white pixel, but it should be noted that the difference between the white pixel here and the general white pixel is that the pixel 101b can also be used to sense infrared light in addition to the visible light. Details are as follows.
  • the pixel array 100 further includes a filter layer 112 and a lens 114 , and constitutes an image sensing device 200 . Before entering the pixel array 100 , light will pass through the lens 114 and the filter layer 112 in sequence. Pixels 101a and 101b respectively include photodiodes 104a and 104b disposed in semiconductor substrate 102 . There are two filter layers 106 and 108 above the photodiodes 104a and 104b and between the microlenses 110a, 110b.
  • the innovation of the present application is to use different designs of the filter layers 112, 106 and 108, so that the pixel 101a is only a general red, blue or green pixel, and at the same time, the pixel 101b is not only used for sensing visible light, Can also be used to sense infrared light. In this way, the pixel 101b can use infrared light to make up for the poor sensing effect caused by the pixel 101a alone when the visible light source is insufficient. That is to say, the pixel 101b of this application can be used to sense infrared light in the environment to assist the pixel 101a, or in some embodiments, an infrared light emitter can be used as an additional sensor when the image sensing device 200 senses.
  • the number of pixels 101a in the pixel array 100 is much more than the number of pixels 101b, eg, the number of pixels 101a in the pixel array 100 is more than 10 times the number of pixels 101b.
  • the present invention does not limit the number and arrangement of the pixels 101a and 101b.
  • the pixel array 100 is mainly used for sensing infrared light, so it can rely on the red and blue colors provided by the pixel 101a. Color or green color information to provide color reproduction assistance for the luminance image formed by the pixel 101b.
  • the number of pixels 101b in the pixel array 100 is much more than the number of pixels 101a, eg, the number of pixels 101b in the pixel array 100 is more than 10 times the number of pixels 101a.
  • the conventional color image sensing device uses an infrared cut filter layer (ie, a known implementation of the filter layer 112 ) to filter out the infrared light before the light enters the microlenses 110 a and 110 b , the infrared light entering the pixel array is filtered out. Only visible light is left and no infrared light is left.
  • the filter layer 112 of the present application allows visible light and infrared light to pass through.
  • the purpose is to allow the photodiode 104a to sense red, blue or green visible light.
  • the portion 106a of the filter layer 106 corresponding to the pixel 101a is used to pass the visible light and transmit the visible light.
  • Infrared light filtering has the same function as the infrared light cut-off filter layer.
  • FIG. 2 is a transmission spectrum of the filter layer 106a, that is, different wavelengths (nm)
  • FIG. 2 is a transmission spectrum of the filter layer 106a, that is, different wavelengths (nm)
  • the filter layer 106a does not pass infrared light with a wavelength band of about 650 nanometers to at least about 940 nanometers; the portion 108a of the filter layer 108 corresponding to the pixel 101a is a red (R), blue (B) or green (G) filter layer, It is used to pass light in the red, blue or green band, the same as the general R, G, B color filter.
  • the filter layers 106a and 108a allow the photodiode 104a to receive visible light in the red, blue or green wavelength bands.
  • FIG. 3 is a transmission spectrum diagram of the red (R), blue (B) and green (G) type filter layers 108a.
  • the red (R), blue (B) or green (G) information in the band interval 312 (ie, about 400 nanometers to about 650 nanometers) in FIG. 3 is what the pixel 101a needs to retain, while the band interval 310 ( Information in the wavelength range 314 (ie, within about 400 nanometers) and the wavelength range 314 (ie, more than about 650 nanometers) is unnecessary for the pixel 101a, and can be filtered out by the filter layer 112 and the filter layer 106a, respectively.
  • the portion 106b of the filter layer 106 corresponding to the pixel 101b and the portion 108b of the filter layer 108 corresponding to the pixel 101b can both allow visible light and infrared light to pass, in other words, light in all wavelengths can pass.
  • the filter layer 106 can be implemented in two layers.
  • the corresponding pixels in the filter layer 106 may include a sub-filter layer 1061a and a sub-filter layer 1062a, both of which are used to pass visible light and filter out infrared light, but the responsible bandpass ranges are different.
  • FIG. 5 is a transmission spectrum diagram of the sub-filter layer 1061a according to an embodiment
  • FIG. 6 is a transmission spectrum diagram of the sub-filter layer 1062a according to an embodiment.
  • the sub-filter layer 1061a blocks infrared light with a wavelength band of about 650 nanometers to at least about 850 nanometers; the sub-filter layer 1062a blocks infrared light with a wavelength band of about 800 nanometers to at least about 940 nanometers.
  • the band-pass band of the sub-filter layer 1061a and the band-pass band of the sub-filter layer 1062a partially overlap and partially do not overlap, but the present application is not limited to this.
  • the sub-filter layer 1061b and the sub-filter layer 1062b in the portion 106b of the filter layer 106 corresponding to the pixel 101b can both allow visible light and infrared light to pass, in other words, light in all wavelengths can pass.
  • filter layers 106 and 108 may be reversed.
  • the filter layer 112 may be disposed on the surface of the microlenses 110a, 110b, for example, formed on the surface of the microlens 110a, 110b on the other side of the microlens 110a, 110b relative to the filter layer 108, as shown in FIG. 7 shown.
  • the filter layer 112 may be disposed on the surface of the lens 114 , for example, formed on the surface of the lens 114 on the same side of the pixel array 100 by means of coating, as shown in FIG. 8 .
  • FIG. 9 is a schematic diagram of an embodiment in which the image sensing device 200/400/700/800 is applied to an electronic device 900 .
  • the electronic device 900 may further include an infrared light emitter (infrared light flash) 500.
  • FIG. 10 is a transmission spectrum diagram of the filter layer 112 of the image sensing device 200/400/700/800, specifically , the filter layer 112 should allow the infrared light emitted by the infrared light emitter 500 to pass through, that is, when the wavelength of the infrared light emitted by the infrared light emitter 500 is 850 nm, the filter layer 112 should be able to make the wavelength of the infrared light at least 400 nm.
  • the light from nanometers to at least 850 nanometers passes through, as shown by 1002 in FIG. 10; when the wavelength of the infrared light emitted by the infrared light emitter 500 is 940 nanometers, the filter layer 112 should be able to make the wavelength range from at least 400 nanometers to at least 940 nanometers.
  • the light passes through, as shown at 1004 in Figure 10.
  • the electronic device 900 may further include a general visible light flash (not shown in the figure).
  • Electronic device 900 may be any electronic device such as a smartphone, personal digital assistant, handheld computer system, or tablet computer.

Abstract

The present application discloses an image sensing apparatus and a related electronic device. The image sensing apparatus comprises a pixel array, comprising: a plurality of pixels, which respectively comprise: a micro lens; a first filtering layer; a second filtering layer; and a photoelectric diode, the first filtering layer and the second filtering layer being provided between the micro lens and the photoelectric diode, the first filtering layer of a first pixel in the plurality of pixels being a red, blue or green filtering layer, and the second filtering layer of the first pixel being used for transmitting visible light, and not transmitting infrared light.

Description

图像传感装置以及相关电子装置Image sensing device and related electronic device 技术领域technical field
本申请涉及一种传感装置,尤其涉及一种图像传感装置以及相关电子装置。The present application relates to a sensing device, and in particular, to an image sensing device and related electronic devices.
背景技术Background technique
图像传感装置已经得到大规模生产和应用。在评估图像传感装置的效能时,通常会考虑到图像传感装置在低光照下的感光能力以及信噪比的高低。因此,需要一种创新设计来改善图像传感装置在低光照下的感光能力并且同时改善图像传感装置的信噪比。Image sensing devices have been mass-produced and applied. When evaluating the performance of an image sensing device, the sensitivity and signal-to-noise ratio of the image sensing device under low light are usually considered. Therefore, there is a need for an innovative design to improve the light-sensing capability of an image sensing device under low light and at the same time improve the signal-to-noise ratio of the image sensing device.
发明内容SUMMARY OF THE INVENTION
本申请的目的之一在于公开一种能改善感光能力的图像传感装置以及相关电子装置,来解决上述问题。One of the objectives of the present application is to disclose an image sensing device and related electronic devices capable of improving light sensitivity, so as to solve the above problems.
本申请的一实施例公开了一种图像传感装置,包括像素阵列,包括:多个像素,分别包括:微透镜;第一滤波层;第二滤波层;以及光电二极管,其中所述第一滤波层和所述第二滤波层设置于所述微透镜和所述光电二极管之间;其中所述多个像素中的第一像素的所述第一滤波层为红色、蓝色或绿色滤光层,以及所述第一像素的所述第二滤波层用来使可见光通过,以及使红外光不通过。An embodiment of the present application discloses an image sensing device, including a pixel array, including: a plurality of pixels, respectively including: a microlens; a first filter layer; a second filter layer; and a photodiode, wherein the first filter layer The filter layer and the second filter layer are arranged between the microlens and the photodiode; wherein the first filter layer of the first pixel in the plurality of pixels is a red, blue or green filter layer, and the second filter layer of the first pixel to pass visible light and not pass infrared light.
本申请的一实施例公开了一种电子装置,包括前述的图像处理装置。An embodiment of the present application discloses an electronic device, including the aforementioned image processing device.
本申请所公开的图像传感装置及相关电子装置能利用新颖的滤 波层设计来改善图像传感装置的感光能力。The image sensing device and related electronic devices disclosed in the present application can utilize novel filter layer designs to improve the light-sensing capability of the image sensing device.
附图说明Description of drawings
图1为本申请的图像传感装置的实施例的示意图。FIG. 1 is a schematic diagram of an embodiment of an image sensing device of the present application.
图2为滤波层106a的透射光谱图。FIG. 2 is a transmission spectrum diagram of the filter layer 106a.
图3红色、蓝色和绿色类型的滤光层108a的透射光谱图。Figure 3. Transmission spectra of red, blue and green type filter layers 108a.
图4为本申请的图像传感装置的另一实施例的示意图。FIG. 4 is a schematic diagram of another embodiment of the image sensing device of the present application.
图5为滤波层1061a的透射光谱图。FIG. 5 is a transmission spectrum diagram of the filter layer 1061a.
图6为滤波层1062a的透射光谱图。FIG. 6 is a transmission spectrum diagram of the filter layer 1062a.
图7为本申请的图像传感装置的另一实施例的示意图。FIG. 7 is a schematic diagram of another embodiment of the image sensing device of the present application.
图8为本申请的图像传感装置的又一实施例的示意图。FIG. 8 is a schematic diagram of yet another embodiment of the image sensing device of the present application.
图9为本申请的電子裝置的实施例的示意图。FIG. 9 is a schematic diagram of an embodiment of an electronic device of the present application.
图10为滤波层112的透射光谱图。FIG. 10 is a transmission spectrum diagram of the filter layer 112 .
具体实施方式detailed description
以下揭示内容提供了多种实施方式或例示,其能用以实现本揭示内容的不同特征。下文所述之组件与配置的具体例子系用以简化本揭示内容。当可想见,这些叙述仅为例示,其本意并非用于限制本揭示内容。举例来说,在下文的描述中,将一第一特征形成于一第二特征上或之上,可能包括某些实施例其中所述的第一与第二特征彼此直接接触;且也可能包括某些实施例其中还有额外的组件形成于上述第一与第二特征之间,而使得第一与第二特征可能没有直接接触。此外,本揭示内容可能会在多个实施例中重复使用组件符号和/或标号。此种重复使用乃是基于简洁与清楚的目的,且其本身不代表所讨论的不同实施例和/或组态之间的关系。The following disclosure provides various implementations, or illustrations, that can be used to implement various features of the present disclosure. Specific examples of components and configurations are described below to simplify the present disclosure. As can be appreciated, these descriptions are exemplary only, and are not intended to limit the present disclosure. For example, in the description below, forming a first feature on or over a second feature may include some embodiments in which the first and second features are in direct contact with each other; and may also include Certain embodiments may have additional components formed between the first and second features described above, such that the first and second features may not be in direct contact. Furthermore, the present disclosure may reuse reference numerals and/or reference numerals in various embodiments. Such reuse is for brevity and clarity, and does not in itself represent a relationship between the different embodiments and/or configurations discussed.
再者,在此处使用空间上相对的词汇,譬如「之下」、「下方」、「低于」、「之上」、「上方」及与其相似者,可能是为了方便说明图中所绘示的一组件或特征相对于另一或多个组件或特征之间的关系。这些空间上相对的词汇其本意除了图中所绘示的方位之外,还涵盖了装置在使用或操作中所处的多种不同方位。可能将所述设备放置于其他方位(如,旋转90度或处于其他方位),而这些空间上相对的描述词汇就应该做相应的解释。Furthermore, the use of spatially relative terms, such as "below", "below", "below", "above", "above" and the like, may be used to facilitate the description of the drawings. relationship between one component or feature shown with respect to another component or feature. These spatially relative terms are intended to encompass many different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be positioned in other orientations (eg, rotated 90 degrees or at other orientations) and these spatially relative descriptors should be interpreted accordingly.
虽然用以界定本申请较广范围的数值范围与参数皆是约略的数值,此处已尽可能精确地呈现具体实施例中的相关数值。然而,任何数值本质上不可避免地含有因个别测试方法所致的标准偏差。在此处,「相同」通常系指实际数值在一特定数值或范围的正负10%、5%、1%或0.5%之内。或者是,「相同」一词代表实际数值落在平均值的可接受标准误差之内,视本申请所属技术领域中具有通常知识者的考虑而定。当可理解,除了实验例之外,或除非另有明确的说明,此处所用的所有范围、数量、数值与百分比(例如用以描述材料用量、时间长短、温度、操作条件、数量比例及其他相似者)均经过「相同」的修饰。因此,除非另有相反的说明,本说明书与附随申请专利范围所揭示的数值参数皆为约略的数值,且可视需求而更动。至少应将这些数值参数理解为所指出的有效位数与套用一般进位法所得到的数值。在此处,将数值范围表示成由一端点至另一端点或介于二端点之间;除非另有说明,此处所述的数值范围皆包括端点。Notwithstanding that the numerical ranges and parameters setting forth the broader scope of the application are approximations, the numerical values set forth in the specific examples have been reported as precisely as possible. Any numerical value, however, inherently contains the standard deviation resulting from individual testing methods. As used herein, "same" generally means that the actual value is within plus or minus 10%, 5%, 1%, or 0.5% of a particular value or range. Alternatively, the term "same" means that the actual value lies within an acceptable standard error of the mean, as considered by one of ordinary skill in the art to which this application pertains. It should be understood that all ranges, quantities, numerical values and percentages used herein (for example, to describe the amount of material, the length of time, temperature, operating conditions, quantity ratio and other similar) are modified by "same". Therefore, unless otherwise stated to the contrary, the numerical parameters disclosed in this specification and the accompanying claims are approximate numerical values and may be changed as required. At a minimum, these numerical parameters should be construed to mean the number of significant digits indicated and the numerical values obtained by applying ordinary rounding. Numerical ranges are expressed herein as from one endpoint to the other or between the endpoints; unless otherwise indicated, the numerical ranges recited herein are inclusive of the endpoints.
图1为本身请的图像传感装置200的实施例的示意图。图像传感装置200包括像素阵列100,至少包括像素101a、101b,其中像素101a为一般像素,主要用来感测可见光,例如用作一般拜耳图案中的红色、蓝色或绿色像素;像素101b为高感光像素,例如用作白色像素,但应注意的是,此处的白色像素和一般的白色像素不同之处在于,像素101b除了用来感测可见光以外,还可用来感测红外光,其细节说明如下。FIG. 1 is a schematic diagram of an embodiment of a self-contained image sensing device 200 . The image sensing device 200 includes a pixel array 100, including at least pixels 101a and 101b, wherein the pixel 101a is a general pixel and is mainly used for sensing visible light, for example, used as a red, blue or green pixel in a general Bayer pattern; the pixel 101b is A high-sensitivity pixel, for example, is used as a white pixel, but it should be noted that the difference between the white pixel here and the general white pixel is that the pixel 101b can also be used to sense infrared light in addition to the visible light. Details are as follows.
像素阵列100之上还包括滤波层112以及透镜114,并构成图像传感装置200,使光线进入像素阵列100之前,会依序先经过透镜114和滤波层112。像素101a和101b分别包括设置于半导体基底102中的光电二极管104a和104b。在光电二极管104a和104b之上和微透镜110a、110b之间,具有两层滤波层106和108。本申请的创新之处即在于利用不同以往的滤波层112、106和108设计,来使像素101a为只一般的红色、蓝色或绿色像素,同时又让像素101b除了用来感测可见光以外,还可用来感测红外光。如此一来,像素101b可以通过红外光来弥补可见光源不足时,单靠像素101a所造成的感测效果不佳的情况。也就是说,本案的像素101b可用来感测环境中的红外光以辅助像素101a,或是在某些实施例中,亦可额外在图像传感装置200感测时,利用红外光发射器作为辅助的闪光灯使用,以增强光源。在此应用下,像素阵列100中的像素101a的数量远多于像素101b的数量,例如像素阵列100中的像素101a的数量大于像素101b的数量的10倍。The pixel array 100 further includes a filter layer 112 and a lens 114 , and constitutes an image sensing device 200 . Before entering the pixel array 100 , light will pass through the lens 114 and the filter layer 112 in sequence. Pixels 101a and 101b respectively include photodiodes 104a and 104b disposed in semiconductor substrate 102 . There are two filter layers 106 and 108 above the photodiodes 104a and 104b and between the microlenses 110a, 110b. The innovation of the present application is to use different designs of the filter layers 112, 106 and 108, so that the pixel 101a is only a general red, blue or green pixel, and at the same time, the pixel 101b is not only used for sensing visible light, Can also be used to sense infrared light. In this way, the pixel 101b can use infrared light to make up for the poor sensing effect caused by the pixel 101a alone when the visible light source is insufficient. That is to say, the pixel 101b of this application can be used to sense infrared light in the environment to assist the pixel 101a, or in some embodiments, an infrared light emitter can be used as an additional sensor when the image sensing device 200 senses. Auxiliary flash is used to enhance the light source. In this application, the number of pixels 101a in the pixel array 100 is much more than the number of pixels 101b, eg, the number of pixels 101a in the pixel array 100 is more than 10 times the number of pixels 101b.
应注意的是,本发明不对像素101a和101b的数量和排列方式另做限制,在某些实施例中,像素阵列100主要用于感测红外光,因此可以依靠像素101a所提供的红色、蓝色或绿色颜色信息,来为像素101b所形成的亮度图像提供色彩还原的辅助。在此应用下,像素阵列100中的像素101b的数量远多于像素101a的数量,例如像素阵列100中的像素101b的数量大于像素101a的数量的10倍。It should be noted that the present invention does not limit the number and arrangement of the pixels 101a and 101b. In some embodiments, the pixel array 100 is mainly used for sensing infrared light, so it can rely on the red and blue colors provided by the pixel 101a. Color or green color information to provide color reproduction assistance for the luminance image formed by the pixel 101b. In this application, the number of pixels 101b in the pixel array 100 is much more than the number of pixels 101a, eg, the number of pixels 101b in the pixel array 100 is more than 10 times the number of pixels 101a.
由于习知的彩色图像传感装置,会在光线进入微透镜110a、110b之前,先使用红外光截止滤波层(即滤波层112的已知实现方式)将红外光滤除,因此进入像素阵列的只剩下可见光而不会有红外光。本申请的滤波层112则是使可见光和红外光通过。Since the conventional color image sensing device uses an infrared cut filter layer (ie, a known implementation of the filter layer 112 ) to filter out the infrared light before the light enters the microlenses 110 a and 110 b , the infrared light entering the pixel array is filtered out. Only visible light is left and no infrared light is left. The filter layer 112 of the present application allows visible light and infrared light to pass through.
对于像素101a来说,其目的在于使光电二极管104a感测到红色、蓝色或绿色的可见光,在本实施例中,滤波层106中对应像素101a的部分106a,用来使可见光通过,并将红外光滤除,功能如同红外光截止滤波层,具体来说,在本实施例中,如图2所示,图2 为滤波层106a的透射光谱图(transmission spectra),即不同波长(nm)的光经过滤波层106a的穿透率(%)的示意图。滤波层106a使波段为约650纳米到至少约940纳米的紅外光不通过;滤波层108中对应像素101a的部分108a为红色(R)、蓝色(B)或绿色(G)滤光层,用来使红色、蓝色或绿色波段的光通过,和一般的R、G、B彩色滤波器相同。总的来说,滤波层106a和108a可使光电二极管104a接受到红色、蓝色或绿色波段的可见光。如图3所示,图3为红色(R)、蓝色(B)和绿色(G)类型的滤光层108a的透射光谱图。其中302代表光经过蓝色(B)滤光层108a的穿透行为;304代表光经过绿色(G)滤光层108a的穿透行为;306代表光经过红色(R)滤光层108a的穿透行为。图3中波段区间312(即约400纳米到约650纳米)中带有的红色(R)、蓝色(B)或绿色(G)信息是像素101a所需要保留下来的,而波段区间310(即约400纳米内)和波段区间314(即约650纳米以上)的信息对像素101a来说是不需要的,可分别通过滤波层112和滤波层106a滤除。For the pixel 101a, the purpose is to allow the photodiode 104a to sense red, blue or green visible light. In this embodiment, the portion 106a of the filter layer 106 corresponding to the pixel 101a is used to pass the visible light and transmit the visible light. Infrared light filtering has the same function as the infrared light cut-off filter layer. Specifically, in this embodiment, as shown in FIG. 2, FIG. 2 is a transmission spectrum of the filter layer 106a, that is, different wavelengths (nm) A schematic diagram of the transmittance (%) of the light passing through the filter layer 106a. The filter layer 106a does not pass infrared light with a wavelength band of about 650 nanometers to at least about 940 nanometers; the portion 108a of the filter layer 108 corresponding to the pixel 101a is a red (R), blue (B) or green (G) filter layer, It is used to pass light in the red, blue or green band, the same as the general R, G, B color filter. In general, the filter layers 106a and 108a allow the photodiode 104a to receive visible light in the red, blue or green wavelength bands. As shown in FIG. 3, FIG. 3 is a transmission spectrum diagram of the red (R), blue (B) and green (G) type filter layers 108a. 302 represents the penetration behavior of light through the blue (B) filter layer 108a; 304 represents the penetration behavior of light through the green (G) filter layer 108a; 306 represents the penetration behavior of light through the red (R) filter layer 108a transparent behavior. The red (R), blue (B) or green (G) information in the band interval 312 (ie, about 400 nanometers to about 650 nanometers) in FIG. 3 is what the pixel 101a needs to retain, while the band interval 310 ( Information in the wavelength range 314 (ie, within about 400 nanometers) and the wavelength range 314 (ie, more than about 650 nanometers) is unnecessary for the pixel 101a, and can be filtered out by the filter layer 112 and the filter layer 106a, respectively.
而滤波层106中对应像素101b的部分106b和滤波层108中对应像素101b的部分108b,均可使可见光和红外光通过,换句话说,可使全波段的光通过。The portion 106b of the filter layer 106 corresponding to the pixel 101b and the portion 108b of the filter layer 108 corresponding to the pixel 101b can both allow visible light and infrared light to pass, in other words, light in all wavelengths can pass.
以单一滤波层实现滤波层106a的带通范围可能有工艺上的难度,因此在某些实施例中,可将滤波层106分两层来实现,例如图4所示,滤波层106中对应像素101a的部分106a可包含子滤波层1061a和子滤波层1062a,皆用来使可见光通过,并将红外光滤除,但负责的带通范围不同,子滤波层1061a和子滤波层1062a合并来看则功能如同滤波层106a。图5为依据一实施例的子滤波层1061a的透射光谱图;图6为依据一实施例的子滤波层1062a的透射光谱图。其中子滤波层1061a使波段为约650纳米到至少约850纳米的紅外光不通过;子滤波层1062a使波段为约800纳米到至少约940纳米的紅外光不通过。在图5和图6的实施例中,子滤波层1061a的带通波段和子滤波层1062a的带通波段部分重叠且部分不重叠, 但本申请不以此为限。It may be difficult to realize the bandpass range of the filter layer 106a with a single filter layer. Therefore, in some embodiments, the filter layer 106 can be implemented in two layers. For example, as shown in FIG. 4 , the corresponding pixels in the filter layer 106 The part 106a of 101a may include a sub-filter layer 1061a and a sub-filter layer 1062a, both of which are used to pass visible light and filter out infrared light, but the responsible bandpass ranges are different. Like filter layer 106a. FIG. 5 is a transmission spectrum diagram of the sub-filter layer 1061a according to an embodiment; FIG. 6 is a transmission spectrum diagram of the sub-filter layer 1062a according to an embodiment. The sub-filter layer 1061a blocks infrared light with a wavelength band of about 650 nanometers to at least about 850 nanometers; the sub-filter layer 1062a blocks infrared light with a wavelength band of about 800 nanometers to at least about 940 nanometers. In the embodiments of FIG. 5 and FIG. 6 , the band-pass band of the sub-filter layer 1061a and the band-pass band of the sub-filter layer 1062a partially overlap and partially do not overlap, but the present application is not limited to this.
而滤波层106中对应像素101b的部分106b中的子滤波层1061b和子滤波层1062b均可使可见光和红外光通过,换句话说,可使全波段的光通过。The sub-filter layer 1061b and the sub-filter layer 1062b in the portion 106b of the filter layer 106 corresponding to the pixel 101b can both allow visible light and infrared light to pass, in other words, light in all wavelengths can pass.
在某些实施例中,可以将滤波层106和108对调。此外,在某些实施例中,滤波层112可设置于微透镜110a、110b的表面,例如以镀膜的方式形成于微透镜110a、110b相对于滤波层108的另一侧的表面,如图7所示。或,在某些实施例中,滤波层112可设置于镜头114的表面,例如以镀膜的方式形成于镜头114于像素阵列100的同一侧的表面,如图8所示。In some embodiments, filter layers 106 and 108 may be reversed. In addition, in some embodiments, the filter layer 112 may be disposed on the surface of the microlenses 110a, 110b, for example, formed on the surface of the microlens 110a, 110b on the other side of the microlens 110a, 110b relative to the filter layer 108, as shown in FIG. 7 shown. Or, in some embodiments, the filter layer 112 may be disposed on the surface of the lens 114 , for example, formed on the surface of the lens 114 on the same side of the pixel array 100 by means of coating, as shown in FIG. 8 .
图9为图像传感装置200/400/700/800应用在电子装置900的实施例的示意图。在某些实施例中,电子装置900可另包含红外光发射器(红外光闪光灯)500,图10为图像传感装置200/400/700/800的滤波层112的透射光谱图,具体来说,滤波层112应让红外光发射器500所发射的红外光能够穿过,亦即当红外光发射器500所发射的红外光的波长为850纳米时,滤波层112应能至少使波段为400纳米到至少850纳米的光通过,如图10的1002所示;当红外光发射器500所发射的红外光的波长为940纳米时,滤波层112应能至少使波段为400纳米到至少940纳米的光通过,如图10的1004所示。在某些实施例中,电子装置900可另包含一般可见光闪光灯(未绘示于图中)。电子装置900可为例如智能型手机、个人数字助理、手持式计算机***或平板计算机等任何电子装置。FIG. 9 is a schematic diagram of an embodiment in which the image sensing device 200/400/700/800 is applied to an electronic device 900 . In some embodiments, the electronic device 900 may further include an infrared light emitter (infrared light flash) 500. FIG. 10 is a transmission spectrum diagram of the filter layer 112 of the image sensing device 200/400/700/800, specifically , the filter layer 112 should allow the infrared light emitted by the infrared light emitter 500 to pass through, that is, when the wavelength of the infrared light emitted by the infrared light emitter 500 is 850 nm, the filter layer 112 should be able to make the wavelength of the infrared light at least 400 nm. The light from nanometers to at least 850 nanometers passes through, as shown by 1002 in FIG. 10; when the wavelength of the infrared light emitted by the infrared light emitter 500 is 940 nanometers, the filter layer 112 should be able to make the wavelength range from at least 400 nanometers to at least 940 nanometers. The light passes through, as shown at 1004 in Figure 10. In some embodiments, the electronic device 900 may further include a general visible light flash (not shown in the figure). Electronic device 900 may be any electronic device such as a smartphone, personal digital assistant, handheld computer system, or tablet computer.
上文的叙述简要地提出了本申请某些实施例之特征,而使得本申请所属技术领域具有通常知识者能够更全面地理解本揭示内容的多种态样。本申请所属技术领域具有通常知识者当可明了,其可轻易地利用本揭示内容作为基础,来设计或更动其他工艺与结构,以实现与此处所述之实施方式相同的目的和/或达到相同的优点。本申请所属技术领域具有通常知识者应当明白,这些均等的实施方式仍 属于本揭示内容之精神与范围,且其可进行各种变更、替代与更动,而不会悖离本揭示内容之精神与范围。The foregoing description briefly sets forth features of certain embodiments of the application, so that those skilled in the art to which this application pertains can more fully understand the various aspects of the present disclosure. It should be apparent to those skilled in the art to which this application pertains that they can readily use the present disclosure as a basis to design or modify other processes and structures for carrying out the same purposes and/or of the embodiments described herein achieve the same advantages. Those with ordinary knowledge in the technical field to which this application belongs should understand that these equivalent embodiments still belong to the spirit and scope of the present disclosure, and various changes, substitutions and alterations can be made without departing from the spirit of the present disclosure. with scope.

Claims (17)

  1. 一种图像传感装置,包括像素阵列,包括:An image sensing device, including a pixel array, including:
    多个像素,分别包括:Multiple pixels, including:
    微透镜;microlens;
    第一滤波层;The first filter layer;
    第二滤波层;以及a second filtering layer; and
    光电二极管,其中所述第一滤波层和所述第二滤波层设置于所述微透镜和所述光电二极管之间;a photodiode, wherein the first filter layer and the second filter layer are disposed between the microlens and the photodiode;
    其中所述多个像素中的第一像素的所述第一滤波层为红色、蓝色或绿色滤光层,以及所述第一像素的所述第二滤波层用来使可见光通过,以及使红外光不通过。The first filter layer of the first pixel in the plurality of pixels is a red, blue or green filter layer, and the second filter layer of the first pixel is used for passing visible light and allowing Infrared light does not pass.
  2. 如权利要求1所述的图像传感装置,其中所述第一滤波层设置于所述微透镜和所述第二滤波层之间。The image sensing device of claim 1, wherein the first filter layer is disposed between the microlenses and the second filter layer.
  3. 如权利要求1所述的图像传感装置,另包括第三滤波层,设置于所述像素阵列之上,用来使可见光和红外光通过。The image sensing device of claim 1, further comprising a third filter layer disposed on the pixel array for passing visible light and infrared light.
  4. 如权利要求3所述的图像传感装置,其中所述第三滤波层用来使波段为400纳米至850纳米或400纳米至940纳米的光通过。The image sensing device of claim 3, wherein the third filter layer is used to pass light in a wavelength range of 400 nm to 850 nm or 400 nm to 940 nm.
  5. 如权利要求3所述的图像传感装置,其中所述第三滤波层覆盖所述微透镜相对于所述第一滤波层的另一面。The image sensing device of claim 3, wherein the third filter layer covers the other side of the microlens relative to the first filter layer.
  6. 如权利要求1所述的图像传感装置,其中所述第一像素的所述第二滤波层用来使波段为650纳米至940纳米的光不通过。The image sensing device of claim 1, wherein the second filter layer of the first pixel is used to block light in a wavelength range of 650 nm to 940 nm.
  7. 如权利要求1所述的图像传感装置,其中所述第一像素的所述第二滤波层包括:The image sensing device of claim 1, wherein the second filter layer of the first pixel comprises:
    第一子滤波层,用来使第一特定波段的红外光不通过;以及a first sub-filter layer for preventing the infrared light of the first specific wavelength band from passing; and
    第二子滤波层,用来使第二特定波段的红外光不通过,其中所述第一特定波段和所述第二特定波段不相同。The second sub-filter layer is used to prevent infrared light of a second specific wavelength band from passing through, wherein the first specific wavelength band and the second specific wavelength band are different.
  8. 如权利要求7所述的图像传感装置,其中所述第一特定波段和所述第二特定波段部分重叠以及部分不重叠。8. The image sensing device of claim 7, wherein the first specific wavelength band and the second specific wavelength band partially overlap and partially do not overlap.
  9. 如权利要求1所述的图像传感装置,其中所述多个像素中的第二像素的所述第一滤波层和所述第二滤波层均用来使可见光和红外光通过。The image sensing device of claim 1, wherein the first filter layer and the second filter layer of the second pixel of the plurality of pixels are both configured to pass visible light and infrared light.
  10. 如权利要求9所述的图像传感装置,其中所述第二像素的所述第一滤波层和所述第二滤波层均用来使全波段的光通过。9. The image sensing device of claim 9, wherein the first filter layer and the second filter layer of the second pixel are both configured to pass light in a full wavelength band.
  11. 如权利要求9所述的图像传感装置,所述多个像素包括多个所述第一像素以及多个所述第二像素,其中多个所述第一像素的数目大于多个所述第二像素至少十倍。9. The image sensing device of claim 9, wherein the plurality of pixels comprises a plurality of the first pixels and a plurality of the second pixels, wherein the number of the plurality of the first pixels is greater than the plurality of the plurality of the first pixels Two pixels at least ten times.
  12. 如权利要求9所述的图像传感装置,所述多个像素包括多个所述第一像素以及多个所述第二像素,其中多个所述第二像素的数目大于多个所述第一像素至少十倍。10. The image sensing device of claim 9, wherein the plurality of pixels comprises a plurality of the first pixels and a plurality of the second pixels, wherein the number of the plurality of the second pixels is greater than that of the plurality of the first pixels A pixel is at least ten times larger.
  13. 如权利要求1所述的图像传感装置,其中所述第一像素用作拜耳图案中的红色、蓝色或绿色像素。The image sensing device of claim 1, wherein the first pixel serves as a red, blue, or green pixel in a Bayer pattern.
  14. 如权利要求9所述的图像传感装置,其中所述第二像素用作白色像素。The image sensing device of claim 9, wherein the second pixel functions as a white pixel.
  15. 如权利要求1所述的图像传感装置,另包括:The image sensing device of claim 1, further comprising:
    镜头,设置于所述第三滤波层之上,使所述第三滤波层位于所述像素阵列和所述镜头之间。A lens is disposed on the third filter layer, so that the third filter layer is located between the pixel array and the lens.
  16. 一种电子装置,包括:An electronic device, comprising:
    如权利要求1-15中任一项所述的图像传感装置。The image sensing device of any one of claims 1-15.
  17. 如权利要求16所述的电子装置,另包括:The electronic device of claim 16, further comprising:
    红外光发射器。Infrared light emitter.
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