WO2021258995A1 - 传感器装置、电子设备和降低信号噪声的方法 - Google Patents
传感器装置、电子设备和降低信号噪声的方法 Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
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Definitions
- the embodiments of the present disclosure relate to a sensor device, electronic equipment, and a method of reducing signal noise.
- Under-screen fingerprint recognition that is, fingerprint recognition in the display screen, is a solution to realize the fingerprint recognition function under the trend of full-screen.
- At least one embodiment of the present disclosure provides a sensor device including a first detection area and a second detection area
- the first detection zone includes at least one detection unit
- the detection unit includes a first detection electrode and a second detection electrode opposed to each other, and a first insulating layer,
- the first detection electrode is electrically insulated from the second detection electrode by the first insulating layer
- the second detection zone includes at least one sensor unit
- the sensor unit includes a first sensor electrode, a second sensor electrode, and a first light sensing layer, and
- the first light sensing layer is electrically connected to the first sensor electrode and the second sensor electrode.
- the first detection area is around the second detection area and does not overlap with the second detection area.
- the detection unit further includes a second light sensing layer, and the second light sensing layer is electrically insulated from the first detection electrode by the first insulating layer .
- the detection unit further includes a second insulating layer, and the second light sensing layer is electrically insulated from the second detection electrode by the second insulating layer.
- the second light sensing layer is sandwiched between the first detection electrode and the second detection electrode, and is included in the first detection electrode.
- a first P-type semiconductor sublayer, a first intrinsic sublayer, and a first N-type semiconductor sublayer are sequentially stacked between the second detection electrode and the second detection electrode.
- the first detection electrode is at least partially transparent; or the second detection electrode is at least partially transparent; or the first detection electrode and the second detection electrode All are at least partially transparent.
- the detection unit further includes a first switching transistor, and the first electrode of the first switching transistor is connected to the first detection electrode or the second detection electrode. Electric connection.
- the sensor device further includes a first gate signal line and a first signal reading line,
- the first gate signal line is electrically connected to the gate of the first switching transistor
- the first signal reading line is electrically connected to the second electrode of the first switch transistor.
- the at least one detection unit includes a plurality of detection units, and the plurality of detection units are arranged in an array.
- the first light sensing layer is sandwiched between the first sensor electrode and the second sensor electrode, and is included in the first sensor electrode.
- a second P-type semiconductor sublayer, a second intrinsic sublayer and a second N-type semiconductor sublayer are sequentially stacked between the second sensor electrode and the second sensor electrode.
- the first sensor electrode is at least partially transparent; or the second sensor electrode is at least partially transparent; or the first sensor electrode and the second sensor electrode All are at least partially transparent.
- the sensor unit further includes a second switching transistor, and a first electrode of the second switching transistor is connected to the first sensor electrode or the second sensor electrode. Electric connection.
- the sensor device further includes a second gate signal line and a second signal reading line,
- the second gate signal line is electrically connected to the gate of the second switching transistor
- the second signal reading line is electrically connected to the second electrode of the second switch transistor.
- the at least one sensor unit includes a plurality of sensor units, and the plurality of sensor units are arranged in an array.
- the first detection electrode and the first sensor electrode are formed in the same layer and have the same shape and size
- the second detection electrode and the second sensor electrode are formed in the same layer and have the same shape and size.
- the first detection electrode and the first sensor electrode are formed in the same layer and have the same shape and size
- the second detection electrode and the second sensor electrode are formed in the same layer and have the same shape and size, and
- the first light sensing layer and the second light sensing layer are formed in the same layer and have the same shape and size.
- At least one embodiment of the present disclosure also provides an electronic device, which includes:
- the sensor device and
- the signal processing device is signal-connected to the sensor device and is configured to obtain a first signal through at least one detection unit in the first detection area and obtain a second signal through at least one sensor unit in the second detection area of the sensor device, and The first signal is used as a common mode noise signal of the second signal to perform a noise reduction operation on the second signal.
- the electronic device further includes a display panel, wherein the display panel includes a display area and a peripheral area arranged around the display area, and the sensor device is arranged in the display area or arranged in the display area. In the surrounding area.
- At least one embodiment of the present disclosure also provides a method for reducing signal noise, which includes:
- the first signal is obtained through at least one detection unit in the first detection area, where the detection unit includes a first detection electrode, a second detection electrode, and a first insulating layer, and the first detection electrode passes through the first insulation.
- the layer is electrically insulated from the second detection electrode;
- the second signal is obtained by at least one sensor unit in the second detection area, where the sensor unit includes a first sensor electrode, a second sensor electrode, and a second light sensing layer, and the second light sensing layer and the first A sensor electrode is electrically connected to the second sensor electrode; and
- the noise reduction operation is performed on the second signal.
- FIG. 1A is a schematic block diagram of an example of a sensor device according to at least one embodiment of the present disclosure.
- Fig. 1B is a schematic block diagram of another example of a sensor device according to at least one embodiment of the present disclosure.
- Fig. 2 is a schematic structural diagram of an example of a detection unit according to at least one embodiment of the present disclosure.
- Fig. 3 is a schematic structural diagram of another example of a detection unit according to at least one embodiment of the present disclosure.
- Fig. 4 is a schematic structural diagram of another example of a detection unit according to at least one embodiment of the present disclosure.
- Fig. 5 is a schematic structural diagram of an example of a sensor unit according to at least one embodiment of the present disclosure.
- Fig. 6 is a cross-sectional view taken along the line L-L' in Fig. 1A.
- FIG. 7 is a top view of a first detection area according to at least one embodiment of the present disclosure.
- FIG. 8 is a top view of a second detection area according to at least one embodiment of the present disclosure.
- Fig. 9 is a schematic structural diagram of an electronic device according to at least one embodiment of the present disclosure.
- FIG. 10A is a top view of a display panel according to at least one embodiment of the present disclosure.
- FIG. 10B is another top view of the display panel according to at least one embodiment of the present disclosure.
- Fig. 11A is a cross-sectional view taken along the line S-S' in Fig. 10A.
- Fig. 11B is another cross-sectional view taken along the line S-S' in Fig. 10A.
- FIG. 12 is a schematic flowchart of a method for reducing signal noise according to at least one embodiment of the present disclosure.
- non-responsive sensor units in order to reduce the signal noise of the sensor, non-responsive sensor units can be designed in the sensor array.
- a light-shielding metal can be used to block the photodiode to prevent the photodiode from being irradiated by light, so that the blocked The photodiode functions as a non-responsive sensor unit.
- the user may notice the reflection of the light-shielding metal, which may cause visualization problems and adversely affect the display effect.
- the embodiments of the present disclosure provide a sensor device, an electronic device, and a method for reducing signal noise, so as to reduce the signal noise of the signal to be detected, improve the signal-to-noise ratio, and avoid the use of light-shielding metal, so as not to affect the display effect .
- FIG. 1A is a schematic block diagram of an example of a sensor device according to at least one embodiment of the present disclosure
- FIG. 1B is a schematic block diagram of another example of a sensor device according to at least one embodiment of the present disclosure.
- the sensor device 10 may include a first detection area 11 and a second detection area 12. Although two first detection areas 11 and one second detection area 12 are shown in FIG. 1A and two first detection areas 11 and two second detection areas 12 are shown in FIG. 1B, it should be understood that The disclosed embodiment does not limit the number of the first detection area 11 and the second detection area 12.
- the sensor device 10 may further include one first detection area 11 or more than three first detection areas 11, and the sensor device 10 may further include more than three second detection areas 12.
- the first detection area 11 is around the second detection area 12 and does not overlap with the second detection area 12.
- the first detection area 11 is shown on both sides of the second detection area 12 in FIG. 1A and the first detection area 11 and the second detection area 12 are alternately arranged in FIG. 1B, it should be understood that the implementation of the present disclosure The example does not limit the arrangement of the first detection area 11 and the second detection area 12.
- the first detection area 11 may be arranged to surround the second detection area 12, for example, the first detection area 11 is provided around the second detection area 12; or the first detection area 11 and the second detection area 11
- the area 12 is arranged in multiple rows and multiple columns.
- the first detection zone 11 includes at least one detection unit A.
- the embodiment of the present disclosure does not limit the arrangement of the detection units in the first detection area 11.
- the plurality of detection units may be arranged in an array for ease of manufacturing and correspond to the arrangement of the sensor units in the second detection area (as described below). It should be understood that the number of detection units A shown in FIG. 1A is only exemplary, and the embodiment of the present disclosure does not limit this.
- Fig. 2 is a schematic structural diagram of an example of a detection unit according to at least one embodiment of the present disclosure.
- the detection unit includes a first detection electrode 111 and a second detection electrode 112 opposed to each other, and a first insulating layer 113.
- the first detection electrode 111 is electrically insulated from the second detection electrode 112 by the first insulating layer 113.
- the first detection electrode 111, the first insulating layer 113, and the second detection electrode 112 are planar and stacked together.
- the orthographic projection of the first detection electrode 111 on the plane where the second detection electrode 112 is located may at least partially overlap the second detection electrode 112. That is, the first detection electrode 111 and the second detection electrode 112 form a capacitor through the first insulating layer 113.
- the first insulating layer 113 is sandwiched between the first detection electrode 111 and the second detection electrode 112.
- the materials of the first detection electrode 111 and the second detection electrode 112 may be the same or different, and both may be metals, alloys, conductive oxides, conductive polymers, or combinations thereof.
- the first detection electrode 111 and the second detection electrode 112 are formed of different materials.
- the material of one of the first detection electrode 111 and the second detection electrode 112 may include, but are not limited to, nickel (Ni), silver (Ag), gold (Au), platinum (Pt), palladium (Pd), selenium (Se), rhodium (Rh), ruthenium (Ru), iridium (Ir), rhenium (Re), tungsten (W), molybdenum (Mo), chromium (Cr), tantalum (Ta), niobium (Nb), aluminum (Al), iron (Fe), cobalt (Co), copper (Cu) and their alloys and oxides, or tin oxide, indium tin oxide (ITO), zinc oxide, titanium oxide, PEDOT:PSS(3,4- Ethylenedioxythiophene: poly(4-styrene sulfonic acid)), PANI (polyanisole), nickel (Ni), silver
- examples of the material of the other of the first detection electrode 111 and the second detection electrode 112 may include, but are not limited to, magnesium (Mg), calcium (Ca), indium (In), lithium (Li), aluminum (Al) , Silver (Ag) or its alloys or fluorides, such as magnesium (Mg)-silver (Ag) alloys, lithium (Li)-fluorine compounds, lithium (Li)-oxygen (O) compounds, etc.
- the first detection electrode 111 and the second detection electrode 112 may also be formed of the same material, and the comparison of the embodiments of the present disclosure is not limited.
- the first detection electrode 111 may be at least partially transparent; or, the second detection electrode 112 may be at least partially transparent; or, both the first detection electrode 111 and the second detection electrode 112 are at least partially transparent. transparent.
- the first insulating layer 113 may include any suitable insulating material.
- suitable insulating material examples include, but are not limited to, silicon dioxide, silicon nitride, aluminum oxide, zirconium dioxide, yttrium trioxide, tantalum pentoxide, lanthanum oxide, titanium dioxide, or a combination thereof.
- the detection unit may further include a second light sensing layer, and the first detection electrode 111 or the second detection electrode 112 is electrically insulated from the second light sensing layer by the first insulating layer.
- the second light sensing layer may be sandwiched between the first detection electrode 111 and the second detection electrode 112, but it should be understood that the embodiments of the present disclosure are not limited thereto.
- Fig. 3 is a schematic structural diagram of another example of a detection unit according to at least one embodiment of the present disclosure. Except that the detection unit in FIG. 3 also includes the second light sensing layer 114, the detection unit in FIG. 3 is basically the same as the detection unit in FIG. 2. The similarities between the embodiment shown in FIG. 2 and the embodiment shown in FIG. 3 will not be repeated.
- the second light sensing layer 114 is electrically insulated from the first detection electrode 111 by the first insulating layer 113 and the second light sensing layer 114 is sandwiched between the first detection electrode 111 and the second detection electrode 112.
- the second light sensing layer 114 can be electrically connected to the second detection electrode 112.
- the second light sensing layer 114 can generate an electrical signal based on the light irradiating the second light sensing layer 114.
- the second light sensing layer 114 may have a planar shape and be laminated with the first detection electrode 111, the first insulating layer 113, and the second detection electrode 112.
- the stacking sequence in FIG. 3 is only illustrative.
- the first detection electrode 111, the first insulating layer 113, the second light sensing layer 114, and the second detection electrode 112 may be as shown in FIG.
- the stacking order is reversed (that is, the first detection electrode 111 may be located at the lowest layer, and the second detection electrode 112 is located at the topmost layer), the embodiment of the present disclosure does not limit this.
- the second light sensing layer 114 may include semiconductor materials such as silicon and germanium, and may be, for example, PN type, PIN type, or the like. In at least one embodiment, the second light sensing layer 114 may be, for example, a PIN type.
- the second light sensing layer 114 may include a first P-type semiconductor sublayer 1141, a first intrinsic sublayer 1142, and a first N-type semiconductor sublayer 1143 that are sequentially stacked.
- the first P-type semiconductor sub-layer 1141, the first intrinsic sub-layer 1142, and the first N-type semiconductor sub-layer 1143 can all be made of conventional materials in the art, which is not limited in the embodiments of the present disclosure.
- the second light sensing layer 114 may be allowed to be irradiated by light.
- the light emitted from the display panel or a separately provided light source for fingerprint recognition can pass through the first detection electrode 111 or the second detection electrode 112 after being reflected by the finger.
- the second light sensing layer 114 since the first detection electrode 111 or the second detection electrode 112 is electrically insulated from the second light-sensitive layer 114 by the first insulating layer 113, the charge accumulated in the second light-sensitive layer 114 due to light cannot pass through the first detection.
- the electrode 111 or the second detection electrode 112 is read out.
- both the first detection electrode 111 and the second detection electrode 112 are electrically insulated from the second light sensing layer 114 by an insulating layer.
- Fig. 4 is a schematic structural diagram of another example of a detection unit according to at least one embodiment of the present disclosure. Except that the detection unit in FIG. 4 also includes the second insulating layer 115, the detection unit in FIG. 4 is basically the same as the detection unit in FIG. 3. The similarities between the embodiment shown in FIG. 4 and the embodiment shown in FIG. 3 will not be repeated.
- the second insulating layer 115 electrically insulates the second light sensing layer 114 from the first detection electrode 111.
- the second insulating layer 115 can also be planar and laminated with the first detecting electrode 111, the first insulating layer 113, the second detecting electrode 112, and the second light sensing layer 114.
- the second insulating layer 115 may include any suitable insulating material.
- Examples of the material of the second insulating layer 115 may include, but are not limited to, silicon dioxide, silicon nitride, aluminum oxide, zirconium dioxide, yttrium trioxide, tantalum pentoxide, lanthanum oxide, titanium dioxide, or a combination thereof.
- the first insulating layer 113 and the second insulating layer 115 are formed of the same or different materials, which is not limited in the embodiment of the present disclosure.
- the second detection area 12 includes at least one sensor unit B.
- the embodiment of the present disclosure does not limit the arrangement of the sensor units in the second detection area 12.
- the plurality of sensor units can be arranged in an array for ease of manufacturing, and can facilitate the formation of a detection "image", which broadens the application range.
- the number of sensor units B shown in FIG. 1A is only exemplary, and the embodiment of the present disclosure does not limit this.
- Fig. 5 is a schematic structural diagram of an example of a sensor unit according to at least one embodiment of the present disclosure.
- the sensor unit according to at least one embodiment of the present disclosure may include a first sensor electrode 121, a second sensor electrode 122 and a first light sensing layer 123.
- the first light sensing layer 123 is electrically connected to the first sensor electrode 121 and the second sensor electrode 122 and is sandwiched between the first sensor electrode 121 and the second sensor electrode 122.
- the materials of the first sensor electrode 121 and the second sensor electrode 122 may be the same or different, and both may be a metal, an alloy, a conductive oxide, a conductive polymer, or a combination thereof.
- the first sensor electrode 121 and the second sensor electrode 122 may be formed of different materials.
- the material of one of the first sensor electrode 121 and the second sensor electrode 122 may include, but are not limited to, nickel (Ni), silver (Ag), gold (Au), platinum (Pt), palladium (Pd), selenium ( Se), rhodium (Rh), ruthenium (Ru), iridium (Ir), rhenium (Re), tungsten (W), molybdenum (Mo), chromium (Cr), tantalum (Ta), niobium (Nb), aluminum ( Al), iron (Fe), cobalt (Co), copper (Cu) and their alloys and oxides, or tin oxide, indium tin oxide (ITO), zinc oxide, titanium oxide, PEDOT: PSS (3,4- Ethylenedioxythiophene: poly(4-styrene sulfonic acid)), PANI (polyaniline), etc.
- examples of the material of the other of the first sensor electrode 121 and the second sensor electrode 122 may include, but are not limited to, magnesium (Mg), calcium (Ca), indium (In), lithium (Li), aluminum (Al) , Silver (Ag) or its alloys or fluorides, such as magnesium (Mg)-silver (Ag) alloys, lithium (Li)-fluorine compounds, lithium (Li)-oxygen (O) compounds, etc.
- the first sensor electrode 121 and the second sensor electrode 122 can also be formed of the same material, and the comparison of the embodiments of the present disclosure is not limited.
- the first sensor electrode 121 and the first detection electrode 111 may be formed of the same or different materials, and the second sensor electrode 122 and the second detection electrode 112 may be formed of the same or different materials, which are not limited in the embodiment of the present disclosure. .
- the electrode located on the light entrance side of the first light sensing layer 123 may be at least partially transparent.
- the first sensor electrode 121 may be at least partially transparent; or, the second sensor electrode 122 may be at least partially transparent; or, both the first sensor electrode 121 and the second sensor electrode 122 may be at least partially transparent.
- the first sensor electrode 121, the first light sensing layer 123, and the second sensor electrode 122 may form a photodiode.
- a voltage can be applied to the first sensor electrode 121 and the second sensor electrode 122 so that the photodiode has a small saturated reverse leakage current when there is no light irradiating the first photo-sensing layer 123, and the photodiode is cut off at this time;
- the saturated reverse leakage current greatly increases, forming a photocurrent, and the photocurrent changes with the intensity of the incident light.
- the first light sensing layer 123 may include semiconductor materials such as silicon and germanium, for example, PN type, PIN type, or the like. In at least one embodiment, the first light sensing layer 123 may be, for example, a PIN junction.
- the first light sensing layer 123 may include a second P-type semiconductor sublayer 1231, a second intrinsic sublayer 1232, and a second N-type semiconductor sublayer 1233 that are sequentially stacked.
- the second P-type semiconductor sub-layer 1231, the second intrinsic sub-layer 1232, and the second N-type semiconductor sub-layer 1233 can all be made of conventional materials in the art, which is not limited in the embodiments of the present disclosure.
- the first P-type semiconductor sublayer 1141 and the second P-type semiconductor sublayer 1231 may be formed of the same or different materials; the second intrinsic sublayer 1142 and the second intrinsic sublayer 1232 may be formed of the same or different materials; and The one N-type semiconductor sub-layer 1143 and the second N-type semiconductor sub-layer 1233 can be formed of the same or different materials, which are not limited in the embodiments of the present disclosure.
- the first light sensing layer 123 may be allowed to be irradiated by light.
- the light emitted from the display panel or a separately provided light source for fingerprint recognition can pass through the first sensor electrode 121 or the second sensor electrode 122 after being reflected by the finger.
- the first light sensing layer 123 Since the first sensor electrode 121 and the second sensor electrode 122 are electrically connected to the first light-sensing layer 123, the charge accumulated in the first light-sensing layer 123 by exposure to light can be passed through the first sensor electrode 121 or the second sensor electrode 122. read out.
- Fig. 6 is a cross-sectional view taken along the line L-L' in Fig. 1A.
- the detection unit A is shown as having the structure shown in FIG. 3.
- the detection unit A may also have the structure shown in FIG. 2 and the structure shown in FIG.
- the structure or other suitable structures are not limited in the embodiments of the present disclosure.
- the detection unit A may further include a first switch transistor 210.
- the first switching transistor 210 may include a first active layer 211, a first electrode 212, a first gate 213, and a second electrode 214.
- the gate insulating layer 310 covers the first active layer 211, and the first active layer 211 is electrically insulated from the first gate 213 by the gate insulating layer 310.
- the first interlayer insulating layer 320 covers the first gate 213.
- the first electrode 212 and the second electrode 214 of the first switching transistor 210 are on the side of the first interlayer insulating layer 320 away from the gate insulating layer 310, and the first electrode 212 and the second electrode 214 of the first switching transistor 210 pass through the first interlayer insulating layer 320.
- the via holes in the interlayer insulating layer 320 and the gate insulating layer 310 are electrically connected to the first active layer 211.
- the second interlayer insulating layer 330 covers the first electrode 212 and the second electrode 214 of the first switching transistor 210.
- the second detection electrode 112 is electrically connected to the first electrode 212 of the first switching transistor 210 through a via hole in the second interlayer insulating layer 330.
- the sensor unit B may further include a second switching transistor 220.
- the second switching transistor 220 may include a second active layer 221, a first electrode 222, a second gate 223, and a second electrode 224.
- part or all of the corresponding film layers of the first switch transistor 210 and the second switch transistor 220 may be arranged in the same layer.
- the first active layer 211 and the second active layer 221 may be provided in the same layer.
- the first gate 213 and the second gate 223 may be provided in the same layer.
- the first pole 212 of the first switching transistor 210 and the first pole 222 of the second switching transistor 220 may be arranged in the same layer.
- the second pole 214 of the first switching transistor 210 and the second pole 224 of the second switching transistor 220 may be arranged in the same layer.
- the film layer setting of the sensor device can be simplified and the thickness of the sensor device can be reduced.
- part or all of the corresponding film layers of the first switch transistor 210 and the second switch transistor 220 may be provided in different layers, which is not limited in the embodiment of the present disclosure.
- “same layer arrangement” or “same layer formation” and other similar expressions refer to the use of the same film forming process to form a film layer for forming a specific pattern, and then use the same mask to pass through once The layer structure formed by the patterning process.
- a patterning process may include multiple exposure, development or etching processes, and the specific patterns in the formed layer structure may be continuous or discontinuous, and these specific patterns may also be at different heights. Or have different thicknesses.
- the patterning or patterning process may include only a photolithography process, or include a photolithography process and an etching step, or may include other processes for forming predetermined patterns such as printing and inkjet.
- the photolithography process refers to the process including film formation, exposure, development, etc., using photoresist, mask, exposure machine, etc. to form patterns.
- the corresponding patterning process can be selected according to the structure formed in the embodiment of the present disclosure.
- the gate insulating layer 310 may also cover the second active layer 221, and the second active layer 221 is electrically insulated from the second gate 223 by the gate insulating layer 310.
- the first interlayer insulating layer 320 covers the second gate 223.
- the first electrode 222 and the second electrode 224 of the second switching transistor 220 are on the side of the first interlayer insulating layer 320 away from the gate insulating layer 310, and the first electrode 222 and the second electrode 224 of the second switching transistor 220 pass through the first interlayer insulating layer 320.
- the via holes in the interlayer insulating layer 320 and the gate insulating layer 310 are electrically connected to the second active layer 221.
- the second interlayer insulating layer 330 covers the first electrode 222 and the second electrode 224 of the second switching transistor 220.
- the second sensor electrode 122 is electrically connected to the first electrode 222 of the second switching transistor 220 through a via hole in the second interlayer insulating layer 330.
- the transistors used in the embodiments of the present disclosure may be thin film transistors, field effect transistors, or other light-switching devices with the same characteristics.
- thin film transistors are used as examples for description.
- the source and drain of the transistor used here can be symmetrical in structure, so the source and drain of the transistor can be structurally indistinguishable.
- one pole is directly described as the first pole and the other pole is the second pole.
- the sensor device may further include a first gate signal line and a first signal read line.
- the first gate signal line is electrically connected with the gate of the first switching transistor, and the first signal reading line is electrically connected with the second electrode of the first switching transistor.
- FIG. 7 is a top view of a first detection area according to at least one embodiment of the present disclosure.
- the sensor device may further include first gate signal lines G1-Gm and first signal read lines R1-Rn.
- the first detection area includes a plurality of detection units A arranged in m rows * n columns (m and n are positive integers and at least one of them is greater than 1). Array.
- the first detection area further includes a plurality of first switching transistors 210, and the plurality of switching transistors 210 are also arranged in an array having m rows*n columns.
- the plurality of first switch transistors 210 are electrically connected to the plurality of detection units A in a one-to-one correspondence, for example, the first electrode of the first switch transistor 210 is electrically connected to the second detection electrode of the detection unit A.
- Each first gate signal line G is electrically connected to the gate of a row of first switching transistors 210.
- Each first signal reading line R is electrically connected to a column of first switching transistors 210.
- the second pole of each first switching transistor 210 is electrically connected to the first signal connection line R.
- the first gate signal lines G1-Gm are all connected to the first row scanning circuit 401 to receive scanning signals.
- the first switching transistor 210 can be turned on or off under the control of the scan signal.
- the first signal reading lines R1-Rn are all connected to the first signal processing circuit 402 to transmit the first signal detected by the detection unit A to the first signal processing circuit 402.
- FIG. 8 is a top view of a second detection area according to at least one embodiment of the present disclosure.
- the sensor device may further include a second gate signal line GL1-GLi and a first signal read line RL1-RLj.
- the second detection area includes a plurality of sensor units B arranged in rows with i rows * j columns (i and j are positive integers and at least one of them is greater than 1).
- Array the second detection area further includes a plurality of second switching transistors 220, and the plurality of switching transistors 220 are also arranged in an array having i rows*j columns.
- the plurality of second switch transistors 220 are electrically connected to the plurality of sensor units B in a one-to-one correspondence, for example, the first pole of the second switch transistor 220 is electrically connected to the second sensor electrode of the sensor unit B.
- Each second gate signal line GL is electrically connected to the gate of a row of second switching transistors 220.
- Each second signal read line RL is electrically connected to a column of second switching transistors 220.
- the second pole of each second switch transistor 220 is electrically connected to the second signal connection line RL.
- the second gate signal lines GL1-GLi are all connected to the second row scanning circuit 501 to receive scanning signals.
- the second switching transistor 220 can be turned on or off under the control of the scan signal.
- the second signal reading lines RL1-RLj are all connected to the second signal processing circuit 502 to transmit the second signal detected by the sensor unit B to the second signal processing circuit 502.
- first gate signal lines G in the first detection area can also be shared as the second gate signal lines in the second detection area, and the first row scanning circuit 401 can also be shared as the second row scanning circuit 501. Therefore, a row of detection units A and a row of sensor units B connected to the shared first gate signal line G receive the same scanning signal from the first row scanning circuit 401.
- at least part of the second gate signal lines GL in the second detection area may be shared as the first gate signal lines in the first detection area and the second row scanning circuit 501 may be shared as The first row scanning circuit 401 will not be described in detail in this article.
- first signal processing circuit 402 and the second signal processing circuit 502 may also be integrated in the same signal processing circuit, which is not limited in the embodiment of the present disclosure.
- first row scanning circuit 401, the first signal processing circuit 402, the second row scanning circuit 501, and the second signal processing circuit 502 may not be included in the sensor device, but may be implemented by circuits external to the sensor device. The example does not restrict this.
- the detection unit A in the first detection area and the sensor unit B in the second detection area may receive substantially the same power signal.
- the first detection electrode of the detection unit A and the first sensor electrode of the sensor unit B may be connected to the same power source through a power line to receive the same power signal.
- the fluctuation of the power signal of the detection unit A in the first detection zone is the same as the fluctuation of the power signal of the sensor unit B in the second detection zone, so that the electric power of the first signal detected by the detection unit A in the first detection zone is the same.
- Mode noise and the electrical common mode noise of the second signal detected by the sensor unit B in the second detection zone are examples of the second detection zone.
- a noise reduction operation can be performed on the second signal detected by the sensor unit B in the second detection area based on the first signal detected by the detection unit A in the first detection area to reduce the signal noise of the second signal, Improve the signal-to-noise ratio.
- the display effect will not be affected even when the sensor device according to the embodiment of the present disclosure is disposed in the display area of the display panel.
- the aforementioned noise reduction operation may include, for example, subtracting the first signal from the second signal, but it should be understood that the embodiment of the present disclosure is not limited thereto.
- the first detection electrode 111 and the first sensor electrode 121 can be formed in the same layer and have the same shape and size
- the second detection electrode 112 and the second The sensor electrodes 122 can be formed in the same layer and have the same shape and size, thereby better performing noise reduction operations, improving the compatibility of the manufacturing process of the detection unit and the sensor unit, and simplifying the manufacturing process of the sensor device.
- the first light-sensitive layer 123 and the second light-sensitive layer 114 may also be in the same layer. It is formed and has the same shape and size, thereby better performing noise reduction operation, improving the compatibility of the manufacturing process of the detection unit and the sensor unit, and simplifying the manufacturing process of the sensor device.
- Fig. 9 is a schematic structural diagram of an electronic device according to at least one embodiment of the present disclosure.
- the electronic device 20 may include a sensor device 21 and a signal processing device 22.
- the sensor device 21 may be a sensor device according to any of the above-mentioned embodiments.
- the signal processing device 22 is in signal connection with the sensor device 21, and the signal processing device 22 is configured to obtain a first signal by at least one detection unit of the first detection area of the sensor device and obtain a first signal by at least one sensor unit of the second detection area of the sensor device.
- the second signal and by using the first signal as a common mode noise signal of the second signal, a noise reduction operation is performed on the second signal.
- the noise reduction operation may be the same as the above noise reduction operation, which will not be repeated in the embodiments of the present disclosure.
- the electronic device 20 may further include a display panel 23.
- FIG. 10A is a top view of the display panel 23 according to at least one embodiment of the present disclosure.
- FIG. 10B is another top view of the display panel 23 according to at least one embodiment of the present disclosure.
- the display panel 23 may include a display area DA and a peripheral area PA provided around the display area DA.
- the sensor device 21 may be provided in the display area DA, for example.
- the sensor device 21 may be provided in the peripheral area PA, for example.
- the display panel 23 may be, for example, a liquid crystal display panel, an organic light emitting diode display panel, a micro light emitting diode display panel, etc., which are not limited in the embodiments of the present disclosure.
- the electronic device 20 may include products or components such as electronic paper, mobile phones, tablet computers, TVs, monitors, notebook computers, digital photo frames, navigators, watches and the like.
- Fig. 11A is a cross-sectional view taken along the line S-S' in Fig. 10A.
- the sensor device 21 may be integrated in the display panel 23.
- the display panel 23 may include a display driving transistor 230 and a light-emitting unit.
- the light-emitting unit may be an organic light-emitting unit, a quantum dot light-emitting unit, or the like.
- the following takes the light-emitting unit as an organic light-emitting unit 240 as an example for description, but the embodiment of the present disclosure is this No restrictions.
- the display driving transistor 230 is electrically connected to the organic light emitting unit 240 to drive the organic light emitting unit 240 to emit light.
- the display panel 23 is shown as an organic light emitting diode display panel, but it should be understood that the embodiment of the present disclosure is not limited thereto.
- the corresponding film layers of the display driving transistor 230 and the first switching transistor 210 and the second switching transistor 220 of the sensor device 21 may be arranged in the same layer.
- the active layer 231 of the display driving transistor 230 may be provided in the same layer as the first active layer 211 of the first switching transistor 210 and the second active layer 221 of the second switching transistor 220.
- the gate 233 of the display driving transistor 230 may be provided in the same layer as the first gate 213 of the first switching transistor 210 and the second gate 223 of the second switching transistor 220.
- the first electrode 231 of the display driving transistor 230 may be arranged in the same layer as the first electrode 212 of the first switching transistor 210 and the first electrode 222 of the second switching transistor 220.
- the second electrode 234 of the display driving transistor 230 may be arranged in the same layer as the second electrode 212 of the first switching transistor 210 and the second electrode 222 of the second switching transistor 220.
- part or all of the corresponding film layers of the display driving transistor 230, the first switching transistor 210, and the second switching transistor 220 may be provided in different layers, and the embodiment of the present disclosure does not limit this. .
- the flat layer 340 may cover the detection unit A and the sensor unit B.
- the pixel defining layer 350 covers the flat layer 340.
- the organic light emitting unit 240 includes a stacked anode 241, an organic light emitting layer 242, and a cathode 243.
- the organic light emitting layer 242 is between the anode 241 and the cathode 243.
- the anode 241 may be electrically connected to the first electrode 231 of the display driving transistor 230 through the switching electrode 251.
- a part of the transfer electrode 251 is on the second interlayer insulating layer 330, and another part of the transfer electrode 251 passes through the via hole in the second interlayer insulating layer 330 to be electrically connected to the first electrode 231 of the display driving transistor 230.
- a part of the anode 241 is on the flat layer 340 and another part of the anode 241 is electrically connected to the via electrode through the via hole in the flat layer 340.
- the anode 241 and the organic light emitting layer 242 may be located in the opening of the pixel defining layer 350.
- the organic light emitting unit 240 may also be provided on the same layer as the detection unit A and the sensor unit B.
- the anode 241 is arranged in the same layer as the second detection electrode 112 and the second sensor electrode 122, and the pixel defining layer 350 can directly cover the detection unit A and the sensor unit B without the flat layer 340, which is not limited in the embodiment of the present disclosure.
- the anode 241 may be formed of the same material as the second detection electrode 112 and the second sensor electrode 122.
- examples of the material of the anode 241 may include, but are not limited to, nickel (Ni), silver (Ag), gold (Au), platinum (Pt), palladium (Pd), selenium (Se), rhodium (Rh), ruthenium (Ru), iridium (Ir), rhenium (Re), tungsten (W), molybdenum (Mo), chromium (Cr), tantalum (Ta), niobium (Nb), aluminum (Al), iron (Fe), cobalt (Co), copper (Cu) and their alloys and oxides, or tin oxide, indium tin oxide (ITO), zinc oxide, titanium oxide, PEDOT: PSS (3,4-ethylenedioxythiophene: poly(4) -Styrene sulfonic acid)), PANI (polyaniline) and so on.
- the cathode 243 may be formed of the same material as the first detection electrode 111 and the first sensor electrode 121.
- examples of the material of the cathode 243 may include, but are not limited to, magnesium (Mg), calcium (Ca), indium (In), lithium (Li), aluminum (Al), silver (Ag) or alloys or fluorides thereof, such as Magnesium (Mg)-silver (Ag) alloy, lithium (Li)-fluorine compound, lithium (Li)-oxygen (O) compound, etc.
- the organic light-emitting layer 242 may emit red light, blue light, green light, yellow light, white light, etc., which are not limited in the embodiments of the present disclosure.
- the material of the organic light emitting layer 242 in the embodiment of the present disclosure can be selected according to the color of the emitted light.
- the material of the organic light-emitting layer 242 in the embodiments of the present disclosure includes fluorescent light-emitting materials or phosphorescent light-emitting materials.
- a doping system is generally used, that is, a dopant material is mixed into the host light-emitting material to obtain a usable light-emitting material.
- the host luminescent material may use metal complex materials, anthracene derivatives, aromatic diamine compounds, triphenylamine compounds, aromatic triamine compounds, benzidine diamine derivatives, or triarylamine polymers; more Specifically, for example, bis(2-methyl-8-hydroxyquinoline-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum (Balq), 9,10-bis-(2-naphthalene Base) anthracene (ADN), 4,4'-bis(9-carbazole)biphenyl (CBP), 4,4',4”-tri-9-carbazolyl triphenylamine (TCTA) or N,N- Bis( ⁇ -naphthyl-phenyl)-4,4-biphenyldiamine (NPB), etc.
- metal complex materials anthracene derivatives, aromatic diamine compounds, triphenylamine compounds, aromatic triamine compounds, benzidine diamine derivatives, or triarylamine polymers
- Fluorescent materials or dopant materials include, for example, coumarin dyes (coumarin6, C-545T), quinacridone (DMQA), or 4-(dinitrile methylene)-2-methyl-6-(4-dimethylamino-styrene)-4H-pyran (DCM) series, etc.
- Phosphorescent materials or doped materials for example, including luminescent materials based on metal complexes such as Ir, Pt, Ru, Cu, such as: FIrpic, Fir6, FirN4, FIrtaz, Ir(ppy)3, Ir(ppy)2(acac), PtOEP, (btp)2Iracac, Ir (piq)2(acac) or (MDQ)2Iracac, etc.
- the material of the organic light-emitting layer 242 in the embodiments of the present disclosure may also include a dual host and doped.
- the organic light emitting unit 240 may further include a hole injection layer, a hole transport layer, an electron injection layer, an electron transport layer, etc., which will not be repeated in the embodiments of the present disclosure.
- the cathode 243, the pixel defining layer 350, and the first sensor electrode 121 may be at least partially transparent to allow light reflected by the user's finger to irradiate the first light sensing layer 123, so that fingerprint recognition can be performed.
- the sensor device 21 can also be attached or directly prepared on the display panel 23.
- Fig. 11B is another cross-sectional view taken along the line S-S' in Fig. 10A. As shown in FIG. 11B, the sensor device 21 may be located above the display panel 23. However, it should be understood that the sensor device 21 may also be located under the display panel 23, as long as it does not affect the realization of the function of the sensor device 21, which is not limited in the embodiment of the present disclosure.
- FIG. 12 is a schematic flowchart of a method for reducing signal noise according to at least one embodiment of the present disclosure.
- the method for reducing signal noise according to at least one embodiment of the present disclosure may be applicable to the sensor device according to any of the above-mentioned embodiments.
- the method for reducing signal noise may include step S602-step S606.
- Step S602 Obtain a first signal through at least one detection unit in the first detection area.
- the detection unit may include a first detection electrode, a second detection electrode, and a first insulation layer, and the first detection electrode is electrically insulated from the second detection electrode by the first insulation layer.
- Step S604 Obtain a second signal through at least one sensor unit in the second detection zone.
- the sensor unit includes a first sensor electrode, a second sensor electrode, and a second light sensing layer, and the second light sensing layer is electrically connected to the first sensor electrode and the second sensor electrode.
- Step S606 Perform a noise reduction operation on the second signal by using the first signal as the common mode noise signal of the second signal.
- the noise reduction operation may include, for example, subtracting the first signal from the second signal, but it should be understood that the embodiment of the present disclosure is not limited thereto.
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Abstract
Description
Claims (19)
- 一种传感器装置,包括第一检测区和第二检测区,其中,所述第一检测区包括至少一个检测单元,所述检测单元包括对置的第一检测电极和第二检测电极以及第一绝缘层,所述第一检测电极通过所述第一绝缘层与所述第二检测电极电绝缘,所述第二检测区包括至少一个传感器单元,所述传感器单元包括第一传感器电极、第二传感器电极和第一光感应层,以及所述第一光感应层与所述第一传感器电极和所述第二传感器电极电连接。
- 根据权利要求1所述的传感器装置,其中,所述第一检测区在所述第二检测区周边且与所述第二检测区不重叠。
- 根据权利要求1或2所述的传感器装置,其中,所述检测单元还包括第二光感应层,所述第二光感应层通过所述第一绝缘层与所述第一检测电极电绝缘。
- 根据权利要求3所述的传感器装置,其中,所述检测单元还包括第二绝缘层,所述第二光感应层通过所述第二绝缘层与所述第二检测电极电绝缘。
- 根据权利要求3或4所述的传感器装置,其中,所述第二光感应层夹置在所述第一检测电极和所述第二检测电极之间,且包括在所述第一检测电极和所述第二检测电极之间依次层叠的第一P型半导体子层、第一本征子层和第一N型半导体子层。
- 根据权利要求1至5中任一项所述的传感器装置,其中,所述第一检测电极至少部分透明;或所述第二检测电极至少部分透明;或所述第一检测电极和所述第二检测电极均至少部分透明。
- 根据权利要求1至6中任一项所述的传感器装置,其中,所述检测单元还包括第一开关晶体管,所述第一开关晶体管的第一极与所述第一检测电极或所述第二检测电极电连接。
- 根据权利要求7所述的传感器装置,还包括第一栅极信号线和第一信号读取线,其中,所述第一栅极信号线与所述第一开关晶体管的栅极电连接,以及所述第一信号读取线与所述第一开关晶体管的第二极电连接。
- 根据权利要求1至8中任一项所述的传感器装置,其中,所述至少一个检测单元包括多个检测单元,所述多个检测单元布置成阵列。
- 根据权利要求1至9中任一项所述的传感器装置,其中,所述第一光感应层夹置在所述第一传感器电极和所述第二传感器电极之间,且包括在所述第一传感器电极和所述第二传感器电极之间依次层叠的第二P型半导体子层、第二本征子层和第二N型半导体子层。
- 根据权利要求1至10中任一项所述的传感器装置,其中,所述第一传感器电极至少部分透明;或所述第二传感器电极至少部分透明;或所述第一传感器电极和所述第二传感器电极均至少部分透明。
- 根据权利要求1至11中任一项所述的传感器装置,其中,所述传感器单元还包括第二开关晶体管,所述第二开关晶体管的第一极与所述第一传感器电极或所述第二传感器电极电连接。
- 根据权利要求12所述的传感器装置,还包括第二栅极信号线和第二信号读取线,所述第二栅极信号线与所述第二开关晶体管的栅极电连接,以及所述第二信号读取线与所述第二开关晶体管的第二极电连接。
- 根据权利要求1至13中任一项所述的传感器装置,其中,所述至少一个传感器单元包括多个传感器单元,所述多个传感器单元布置成阵列。
- 根据权利要求1至14中任一项所述的传感器装置,其中,所述第一检测电极与所述第一传感器电极同层形成且具有相同的形状和尺寸,所述第二检测电极与所述第二传感器电极同层形成且具有相同的形状和尺寸。
- 根据权利要求3所述的传感器装置,其中,所述第一检测电极与所述第一传感器电极同层形成且具有相同的形状和尺寸,所述第二检测电极与所述第二传感器电极同层形成且具有相同的形状和尺寸,所述第一光感应层与所述第二光感应层同层形成且具有相同的形状和尺寸。
- 一种电子设备,包括:所述传感器装置;以及信号处理装置,与所述传感器装置信号连接,并且配置为通过第一检测区的至少一个检测单元获得第一信号和通过传感器装置的第二检测区的至少一个传感器单元获得第二信号,且将所述第一信号作为所述第二信号的共模噪声信号,以对所述第二信号执行降噪操作。
- 根据权利要求17所述的电子设备,还包括显示面板,其中,所述显示面板包括显示区域以及设置在所述显示区域周边的周边区域,所述传感器装置设置于所述显示区域或设置于所述周边区域之中。
- 一种降低信号噪声的方法,包括:通过第一检测区的至少一个检测单元获得第一信号,其中,所述检测单元包括第一检测电极、第二检测电极和第一绝缘层,以及所述第一检测电极通过所述第一绝缘层与所述第二检测电极电绝缘;通过第二检测区的至少一个传感器单元获得第二信号,其中,所述传感器单元包括第一传感器电极、第二传感器电极和第二光感应层,以及所述第二光感应层与所述第一传感器电极电连接和所述第二传感器电极电连接;以及通过将所述第一信号作为所述第二信号的共模噪声信号,对所述第二信号执行降噪操作。
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US20170193265A1 (en) * | 2015-12-30 | 2017-07-06 | Mstar Semiconductor, Inc. | Capacitive sensing device, fingerprint sensing device and method for manufacturing capacitive sensing device |
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